Frequency-Based Impedance Adjustment in Tuned Circuits

Abstract

A substrate processing system for processing a substrate in a processing chamber includes a matching network, a tuning circuit, and a controller. The matching network receives a first RF signal having a first frequency from an RF generator and impedance-matches an input of the matching network to an output of the RF generator. The tuning circuit includes a circuit component having a first impedance different from the matching network. The tuning circuit receives the output of the matching network and outputs a second RF signal to a first electrode on the substrate support. The controller determines a target impedance for the circuit component and, based on the target impedance, sends a signal to the RF generator to adjust the first frequency of the first RF signal received by the matching network to the second frequency, changing the first impedance of the circuit component to match the target impedance.

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of U.S. Provisional Application No. 62 / 935,976, filed November 15, 2019. The entire disclosures of the above-referenced applications are incorporated herein by reference.

[0002] The present disclosure relates to electrical holding devices that use electrostatic attraction, and more particularly to tuning circuits for clamping electrodes and radio frequency (RF) electrodes of electrical holding devices. [Background technology]

[0003] The background description provided herein is intended to provide a general overview of the contents of the present disclosure. Work by the currently named inventors within the scope of what is described in this Background section, as well as aspects of the description that may not otherwise be regarded as prior art at the time of filing, are not admitted, expressly or impliedly, as prior art against the present disclosure.

[0004] Substrate processing systems can be used to perform etching, deposition, and / or other processing of substrates, such as semiconductor wafers. Exemplary processes that can be performed on the substrate include, but are not limited to, plasma-enhanced chemical vapor deposition (PECVD) processes, physical vapor deposition (PVD) processes, ion implantation processes, and / or other etching, deposition, and cleaning processes. As an example, during an etching process, the substrate can be placed on an electrostatic chuck (ESC) in the substrate processing system and a thin film on the substrate is etched. Summary of the Invention

[0005] A substrate processing system for processing a substrate in a processing chamber is provided. The substrate processing system includes a matching network, a first tuning circuit, and a controller. The matching network is configured to receive a first radio frequency signal having a first frequency from a radio frequency generator and impedance match an input of the matching network to an output of the radio frequency generator. The first tuning circuit includes a first circuit component having a first impedance different from the matching network. The first tuning circuit is configured to receive an output of the matching network and output a second radio frequency signal to a first electrode on the substrate support. The controller is configured to determine a target impedance for the first circuit component and, based on the target impedance, send a signal to the radio frequency generator to tune a first frequency of the first radio frequency signal received at the matching network to a second frequency and change a first impedance of the first circuit component to match the target impedance.

[0006] In other features, the substrate processing system further includes a radio frequency generator having a center frequency and configured to generate a first radio frequency signal having the first frequency based on the control signal, the controller being configured to generate the control signal, the first frequency being within a predetermined range of the center frequency.

[0007] In other features, the matching network does not change the first frequency of the first radio frequency signal and provides the first radio frequency signal to the first tuned circuit.

[0008] In other features, the controller is configured to tune the first frequency to the second frequency independently of impedance matching an input of the matching network to an output of the radio frequency generator.

[0009] In other features, the controller is configured to tune the first frequency to the second frequency without affecting an impedance match between the matching network and the radio frequency generator.

[0010] In other features, the matching network is configured to maintain an impedance match between an input of the matching network and an output of the radio frequency generator while the controller tunes the first frequency to the second frequency.

[0011] In other features, the first tuning circuit includes a first circuit component and a second circuit component. The first circuit component is connected to the first electrode. The second circuit component is connected to a second electrode on the substrate support. The controller is configured to tune the first frequency to a second frequency to adjust a first impedance of the first circuit component and a second impedance of the second circuit component to vary power distribution from the first tuning circuit to the first electrode and the second electrode.

[0012] In other features, the frequency of the second radio frequency signal is the same frequency as the frequency of the first radio frequency signal.

[0013] In other features, the controller is configured to adjust a capacitance or an inductance of the first circuit component in addition to adjusting the first frequency to the second frequency when adjusting the first impedance to match the target impedance.

[0014] In other features, the controller is configured to maintain at least one of a capacitance or an inductance of the first circuit component at a fixed value while adjusting the first impedance.

[0015] In other features, the first tuned circuit distributes a total amount of power received from the matching network to the first circuit component and the second circuit component, and the controller is configured to adjust the first frequency to the second frequency and to adjust a first portion of the total amount of power provided to the first circuit component and a second portion of the total amount of power provided to the second circuit component.

[0016] In other features, the substrate processing system further includes a source terminal and a substrate support including a first electrode and a second electrode, the first electrode and the second electrode receiving power from the matching network via the source terminal, and the first tuning circuit includes at least one of a first impedance set connected in series between the first electrode and the matching network, the first impedance set receiving the second radio frequency signal from the matching network via the source terminal, or a second impedance set connected between an output of the matching network and a reference terminal, the second impedance set receiving the second radio frequency signal from the matching network via the source terminal.

[0017] In other features, the first tuning circuit includes a first impedance set and a second impedance set.

[0018] In other features, the substrate processing system further includes a second tuning circuit, a third tuning circuit, and a third electrode. The first tuning circuit is connected to the first electrode and configured to modify the output of the matching network to generate a second radio frequency signal. The second tuning circuit is connected to the second electrode and configured to modify the output of the matching network to generate a third radio frequency signal provided to the second electrode. The third tuning circuit is connected to the third electrode and configured to modify the output of the matching network to generate a fourth radio frequency signal provided to the third electrode.

[0019] In other features, the substrate support is an electrostatic chuck, the first electrode and the second electrode are clamping electrodes and configured to receive a clamping voltage to clamp the substrate to the substrate support, and the third electrode is a biasing electrode and configured to receive a biasing voltage.

[0020] In other features, the substrate support is an electrostatic chuck, the first electrode is a clamping electrode, and the second electrode and the third electrode are bias electrodes.

[0021] In other features, no matching network is connected between (i) the source terminal and (ii) the first electrode and the second electrode.

[0022] In other features, a first circuit component is connected to a first electrode and a second electrode on the substrate support and affects power distribution to the first electrode and the second electrode.

[0023] In another feature, a method of operating a substrate processing system is provided that includes selecting a process, determining a recipe including system operating parameters for the selected process, determining a frequency of a radio frequency generator and a first target impedance value for an impedance of a tuning circuit based on the selected process and the system operating parameters, sending a signal to the radio frequency generator to generate a first radio frequency signal, impedance matching an output of the radio frequency generator via a matching network, the matching network being different from the tuning circuit, tuning the signal output of the matching network via the tuning circuit to generate a second radio frequency signal, providing the second radio frequency signal to a first electrode on a substrate support, and tuning a first frequency of the first radio frequency signal to a second frequency to adjust the impedance of the tuning circuit to match the first target impedance value.

[0024] In other features, the method further includes tuning the first frequency to the second frequency independently of impedance matching an input of the matching network to an output of the radio frequency generator.

[0025] In other features, the method further includes tuning the first frequency to the second frequency without affecting an impedance match between the matching network and the radio frequency generator.

[0026] In other features, the method further includes maintaining an impedance match between an input of the matching network and an output of the radio frequency generator through the matching network while tuning the first frequency to the second frequency.

[0027] In other features, the method further includes collecting sensor output data; determining a second target impedance value based on the sensor output data; and tuning the first frequency to a third frequency to adjust the impedance of the tuned circuit to match the second impedance value.

[0028] In other features, the method further includes adjusting at least one of a capacitance or an inductance of the impedance to match the impedance to the first target impedance value.

[0029] In other features, the method further includes tuning the first frequency to a second frequency without adjusting a capacitance of the impedance to adjust the impedance to match the first impedance value.

[0030] In other features, the method further includes tuning the first frequency to a second frequency without adjusting an inductance of the impedance to adjust the impedance to match the first impedance value.

[0031] In other features, an impedance is connected in parallel to the first electrode and the second electrode on the substrate support to affect power distribution to the first electrode and the second electrode.

[0032] In other features, the method further includes placing a substrate on a substrate support in a processing chamber and performing a processing operation for a selected process including providing power from a matching network to a first electrode and a second electrode on the substrate support. The tuning circuit includes at least one of a first impedance set connected in series between the first electrode and the matching network, the first impedance set receiving the second radio frequency signal from the matching network, or a second impedance set connected between an output of the matching network and a reference terminal, the second impedance set receiving the second radio frequency signal from the matching network.

[0033] In other features, the method further includes, while performing the processing operations, (i) tuning the first frequency to a second frequency and (ii) tuning at least one of a capacitance or an inductance of the first impedance set or the second impedance set.

[0034] In other features, the method further includes collecting sensor output data while performing the processing operations, determining one or more parameters based on the sensor output data, and adjusting impedance values ​​of the first impedance set or the second impedance set based on the one or more parameters.

[0035] In other features, the method further includes determining a characteristic or property of the processing chamber and setting the impedance values ​​of the first impedance set or the second impedance set based on the characteristic or property.

[0036] In other features, the method further includes determining a characteristic or property of the substrate support and setting the impedance values ​​of the first impedance set or the second impedance set based on the characteristic or property.

[0037] In other features, the method further includes adjusting at least one impedance of the first impedance set or the second impedance set to follow a respective trajectory based on the change in the characteristic.

[0038] In other features, the method further includes calculating or determining the trajectory based on at least one of the features; the characteristics; one or more other features of the substrate, the substrate support, or the processing chamber; and one or more other characteristics of the substrate, the substrate support, or the processing chamber.

[0039] In other features, the method further includes determining a characteristic or property of the substrate and setting an impedance value of the tuned circuit based on the characteristic or property.

[0040] In other features, the method further includes providing a clamping voltage to the first electrode via a matching network to clamp the substrate to the substrate support, providing a bias voltage to the second electrode, and tuning the clamping voltage and the bias voltage via the tuning circuit or another tuning circuit. The substrate support is an electrostatic chuck.

[0041] In other features, a substrate processing system is provided, including a matching network, a tuning circuit, and a controller. The matching network is configured to receive a first radio frequency signal having a first frequency from a radio frequency generator and impedance match an input of the matching network to an output of the radio frequency generator. The tuning circuit is distinct from the matching network. The tuning circuit is configured to output a second radio frequency signal to a first electrode in the substrate support and output a third radio frequency signal to a second electrode in the substrate support based on an output of the matching network. The controller is configured to adjust power distribution to the first electrode and the second electrode in the substrate support by sending a signal to the radio frequency generator to adjust the first frequency of the first radio frequency signal received at the matching network to the second frequency.

[0042] In other features, the matching network does not change the first frequency of the first radio frequency signal and provides the first radio frequency signal to the tuned circuit.

[0043] In other features, the controller is configured to tune the first frequency to the second frequency independently of impedance matching an input of the matching network to an output of the radio frequency generator.

[0044] In other features, the controller is configured to tune the first frequency to the second frequency without affecting an impedance match between the matching network and the radio frequency generator.

[0045] In other features, the matching network is configured to maintain an impedance match between an input of the matching network and an output of the radio frequency generator while the controller tunes the first frequency to the second frequency.

[0046] In other features, the tuning circuit includes a first circuit component and a second circuit component, the first circuit component connected to the first electrode, the second circuit component connected to the second electrode, and tuning the first frequency to the second frequency changes a first impedance of the first circuit component and a second impedance of the second circuit component.

[0047] In other features, the tuning circuit delivers a total amount of power to the first electrode and the second electrode, and tuning the first frequency to the second frequency adjusts the first impedance and the second impedance, thereby adjusting a first percentage of the total amount of power delivered to the first electrode and a second percentage of the total amount of power delivered to the second electrode.

[0048] In other features, the controller is configured to adjust a capacitance or an inductance of the first circuit component while adjusting the first frequency to the second frequency.

[0049] In other features, the controller is configured to maintain at least one of a capacitance or an inductance of the first circuit component at a fixed value while adjusting the first frequency to the second frequency.

[0050] Other areas of applicability of the present disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for purposes of illustration only and are not intended to limit the scope of the present disclosure. [Brief description of the drawings]

[0051] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0052] [Figure 1] FIG. 1 is a functional block diagram of an example substrate processing system incorporating a frequency controller, an ESC with electrodes and corresponding matching networks, and one or more tuning circuits, according to one embodiment of the present disclosure.

[0053] [Diagram 2] FIG. 2 is a functional block diagram of an exemplary capacitive coupling circuit including tuning circuits for clamping and biasing electrodes, according to one embodiment of the disclosure.

[0054] [Diagram 3] FIG. 3 is a functional block diagram of an example capacitive coupling circuit including tuning circuits for two clamp electrodes and a bias electrode, according to one embodiment of the disclosure.

[0055] [Figure 4] FIG. 4 is a functional block diagram of an example capacitive coupling circuit including tuning circuits for a clamp electrode and two bias electrodes, according to one embodiment of the disclosure.

[0056] [Diagram 5] FIG. 5 is a functional block diagram of an example capacitive coupling circuit including tuning circuits for a clamp electrode and three bias electrodes, according to one embodiment of the present disclosure.

[0057] [Figure 6] FIG. 6 is a functional block diagram of an example of a tuning circuit for clamping and biasing electrodes, according to one embodiment of the present disclosure.

[0058] [Figure 7] FIG. 7 is a functional block schematic diagram of an example tuning circuit connected to a single RF power source and including series connected inductors and capacitors for two clamp electrodes and a bias electrode ring, in accordance with one embodiment of the present disclosure.

[0059] [Figure 8] FIG. 8 is a functional block schematic diagram of an example tuning circuit connected to a single RF power source and including shunt inductors and capacitors for two clamp electrodes and a bias electrode ring, in accordance with one embodiment of the present disclosure.

[0060] [Figure 9] FIG. 9 is a functional block schematic diagram of an example tuning circuit connected to a dual RF power supply and including series connected inductors and capacitors for the two clamping and bias electrode rings, as well as a shunt inductor and capacitor, in accordance with an embodiment of the present disclosure.

[0061] [Figure 10] FIG. 10 is a functional block schematic diagram of an example of two tuning circuits including series connected inductors and capacitors, or shunt inductors and capacitors, for the two clamping and bias electrode rings, connected to respective RF power sources in accordance with one embodiment of the present disclosure.

[0062] [Figure 11] FIG. 11 is a functional block schematic diagram of an example tuning circuit including parallel connected capacitors and inductors for two clamp electrodes and a bias electrode ring, according to one embodiment of the present disclosure.

[0063] [Figure 12] FIG. 12 illustrates a method of operating a substrate processing system including setting and adjusting an RF generator frequency and impedance value for a tuning circuit of an electrode of an electrostatic chuck according to one embodiment of the present disclosure.

[0064] [Figure 13] FIG. 13 illustrates an example of a substrate support including an outer ring electrode and two inner electrodes, according to one embodiment of the present disclosure.

[0065] In the drawings, reference numbers may be reused to refer to similar and / or identical elements. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0066] In a capacitively coupled plasma (CCP) system, an RF voltage signal may be supplied to a showerhead and / or a substrate support (e.g., an electrostatic chuck or pedestal) in a processing chamber to generate and maintain a plasma during substrate processing (e.g., a plasma provided during an etching or deposition process). By way of example, the substrate support may include multiple electrodes for receiving the RF voltage. The electrodes may have different sizes and shapes and may be positioned at different locations within the substrate support.

[0067] The examples described herein include (i) a frequency controller for setting and adjusting an RF generator frequency, and (ii) a tuning circuit for controlling an RF voltage supplied to an electrode of a substrate support. The tuning circuit is distinct from a matching network connected between the RF generator and the tuning circuit. For clarity, the tuning circuit is not included in the matching network and is separate from the matching network. The frequency controller adjusts the RF generator frequency to adjust the power distribution in and across the substrate support. The RF generator frequency is adjusted independently of impedance matching and / or minimizing reflected power. The frequency controller adjusts the frequency to effectively adjust the impedance of the tuning circuit, which affects power distribution and on-wafer processing. The disclosed frequency adjustments can be performed without directly changing the variable capacitance and inductance of the circuit components included in the tuning circuit, or can be performed in addition to directly adjusting the capacitance and inductance of the circuit components. In one embodiment, the change in the RF generator frequency is within a predetermined frequency range where no impedance mismatch occurs between the RF generator and the matching network. In another embodiment, changes in the RF generator frequency are present across the operating frequency range that may cause one or more impedance mismatches between the RF generator and the matching network, in this latter embodiment, the matching network is configured to actively maintain an impedance match across the operating frequency range of the RF generator.

[0068] Adjusting the RF generator frequency to adjust the impedance of a tuning circuit to change the power distribution at the substrate support is different from adjusting the frequency of the RF generator for the purpose of impedance matching. The RF generator frequency can be adjusted to change the impedance of the matching network to match the impedance of the output of the RF generator. This is done without changing the power distribution at the substrate support and / or wafer uniformity. In contrast, adjusting the RF generator frequency to adjust the power distribution and on-wafer processing may be performed to provide or change wafer uniformity.

[0069] The tuning circuit includes a variable and / or fixed impedance that can be tuned for the substrate processing being performed. The RF voltage and corresponding current supplied to the electrodes can be controlled to change the aspect of the generated plasma. During processing, a substrate is placed on a substrate support, and one or more layers (e.g., film layers) of the substrate can be, for example, etched or deposited. By adjusting the RF voltages supplied to the different electrodes, parameters of one or more layers can be spatially varied and / or tuned across the wafer according to the location of the electrodes. By way of example, the parameters of one or more layers can include uniformity values, stress values, refractive index, etch rate, deposition rate, thickness values, and / or other intrinsic property values ​​that are measured quantities.

[0070] RF power is disclosed as being provided from one or more RF power sources. In one embodiment, RF power is provided by providing RF power at a common node from a single RF power source. RF power is then provided from the common node to different electrodes of the substrate support via respective paths. The paths include tuning circuits and / or impedances that change the corresponding RF voltage, current level, phase, and / or frequency content. The impedances may include series or shunt connected impedances. Other embodiments including multiple power sources, multiple nodes, and various paths are disclosed herein.

[0071] The RF voltage and current levels provided to the electrodes in the substrate support can also be varied by adjusting the size, shape, and pattern of the electrodes. For example, the RF voltage provided to the plasma from annular and / or circular electrodes, the substrate processing performed using annular and / or circular electrodes, and / or the resulting substrate properties can be changed and / or tuned by changing the radius of the electrodes.

[0072] A substrate processing system may have multiple features, characteristics, and / or parameters that provide degrees of freedom and can be set and / or adjusted to control the resulting aspects of a layer of a substrate during substrate processing. For example, RF power levels, chamber geometry, use of focus rings, showerhead hole patterns, showerhead geometry, electrode patterns, gas pressures, gas compositions, etc. can be set and / or controlled to provide a target layer configuration and profile in the resulting substrate.

[0073] The disclosed examples provide another degree of freedom for tuning the profile of one or more layers of a substrate. The degree of freedom is provided by setting and / or adjusting the impedance of the tuning circuit (e.g., selecting, changing and / or controlling the capacitance, inductance, reactance, resistance, layout, etc.). Profile refers to the above-mentioned parameters of one or more layers.

[0074] The radial profile of the substrate can be varied, for example, by varying a metal or dielectric annular element near the circumferential edge of the substrate. This can include adjusting parameters such as gas pressure, gas flow rate, gas composition, RF discharge power, frequency of the RF signal provided to the electrode of the substrate support, and / or other parameters. Varying these parameters at a particular location to provide a target layer characteristic (e.g., a particular layer thickness or shape at the circumferential edge) may vary other parameters and / or affect other characteristics at the same location and / or other locations. Thus, these parameters do not independently adjust a particular characteristic. As another example, the circumferential edge of the substrate can be varied by using a focus ring located outside the circumferential edge of the substrate. However, the use of a focus ring can affect the flow rate of gas at the center of the substrate, which can affect the process and therefore the results at the center of the substrate. Other exemplary layer characteristics are the depth or width of a particular trench, the distance between trenches, the distance between conductive elements, the composition of the layer, etc.

[0075] The more parameters and degrees of freedom in setting and controlling the tuning of the profile of one or more layers of a substrate, the greater the likelihood that a particular feature can be provided without adversely affecting other features. Also, as the number of parameters and degrees of freedom increase, the number, configurations, and layouts (or patterns) of features that can be formed increase. The examples disclosed herein increase the design flexibility and site-specific design options of substrate layers, enabling a substrate processing system to provide a diverse set of features.

[0076] FIG. 1 illustrates a substrate processing system 100 incorporating an ESC (or substrate support) 101. The ESC refers to a substrate support that includes a clamping electrode to which a voltage is applied to generate an attractive force to clamp the substrate to the ESC. The ESC 101 can be configured the same as or similar to any of the ESCs disclosed herein. Although FIG. 1 illustrates a capacitively coupled plasma (CCP) system, the embodiments disclosed herein are applicable to transformer coupled plasma (TCP) systems, electron cyclotron resonance (ECR) plasma systems, inductively coupled plasma (ICP) systems, and / or other systems and plasma sources that include a substrate support. The embodiments are applicable to PVD processes, PECVD processes, chemically enhanced plasma vapor deposition (CEPVD) processes, ion implantation processes, plasma etching processes, and / or other etching, deposition, and cleaning processes.

[0077] The ESC 101 may include a top plate 102 and a base plate 103. Although the ESC 101 is shown as having two plates, the ESC 101 may include a single plate. The plates 102, 103 may be formed of ceramic and / or other materials. Although the ESCs in FIGS. 1-5 and 7-11 are each shown as having certain features and not other features, each of the ESCs may be modified to include any of the features disclosed herein and in FIGS. 1-5 and 7-11.

[0078] Although the ESC 101 is shown mounted to the bottom of the processing chamber and not configured to rotate, the ESC 101 and other ESCs disclosed herein may be configured as a spin chuck mounted to the bottom or top of a processing chamber and rotated during processing of a substrate. When mounted to the top of a processing chamber, the ESC 101 may have a similar configuration as disclosed herein, but may be flipped upside down and include peripheral substrate holding, clamping, and / or clasping hardware.

[0079] The substrate processing system 100 includes a process chamber 104. The ESC 101 is enclosed within the process chamber 104. The process chamber 104 also encloses other components, such as an upper electrode 105, and contains the RF plasma. In operation, a substrate 107 is placed on the top plate 102 of the ESC 101 and is electrostatically clamped thereto.

[0080] By way of example only, the upper electrode 105 may include a showerhead 109 for introducing and distributing gases. The showerhead 109 may include a stem portion 111 including one end connected to the top surface of the processing chamber 104. The showerhead 109 is generally cylindrical and extends radially outward from an opposite end of the stem portion 111 at a location spaced from the top surface of the processing chamber 104. The surface facing the substrate or the showerhead 109 includes holes through which process or purge gases flow. Alternatively, the upper electrode 105 may include a conductive plate and gases may be introduced in another manner. One or both of the plates 102, 103 may function as the lower electrode.

[0081] One or both of the plates 102, 103 may include a temperature control element (TCE). By way of example, FIG. 1 shows a top plate 102 including a TCE 110 and used as a heating plate. An intermediate layer 114 is disposed between the plates 102, 103. The intermediate layer 114 may bond the top plate 102 to the base plate 103. By way of example, the intermediate layer may be formed of an adhesive material suitable for bonding the top plate 102 to the base plate 103. The base plate 103 may include one or more gas channels 115 and / or one or more coolant channels 116 for flowing backside gas to the back side of the substrate 107 and for flowing coolant through the base plate 103.

[0082] The RF generation system 120 generates and outputs RF voltages to the upper electrode 105 and the lower electrode (e.g., one or more of the plates 102, 103). The upper electrode 105 and one of the ESCs 101 can be DC grounded, AC grounded, or at a floating potential. By way of example only, the RF generation system 120 may include one or more RF generators 122 (e.g., capacitively coupled plasma RF power generators, bias power generators, and / or other RF power generators) controlled by a system controller 121 that generate RF voltages, which are supplied to the upper electrode 105 and / or the ESCs 101 by one or more matching and distribution networks 124. The system controller 121 includes a frequency controller 119 that sets and adjusts the frequency of the RF signals output from the RF generators 123, 125. The frequency can be adjusted to adjust the power distribution within and across the ESCs 101.

[0083] As an example, a first RF generator 123, a second RF generator 125, a first RF matching network 127, and a second RF matching network 129 are shown. The first RF generator 123 and the first RF matching network 127 can provide an RF voltage or simply connect the showerhead 109 to a ground reference. The second RF generator 125 and the second RF matching network 129, each or collectively referred to as a power source, can provide an RF / bias voltage to the ESC 101. In one embodiment, the first RF generator 123 and the first RF matching network 127 provide power to ionize the gas and drive the plasma. In another embodiment, the second RF generator 125 and the second RF matching network 129 provide power to ionize the gas and drive the plasma. One of the RF generators 123, 125 can be a high power RF generator generating, for example, 6-10 kilowatts (kW) or more of power.

[0084] The second RF matching network 129 provides impedance matching such that the input of the second impedance matching network 129 matches the output impedance of the second RF generator 125. The second RF matching network 129 can either (i) maintain fixed capacitance and inductance values ​​of the circuit components (e.g., capacitors and inductors) of the second RF matching network 129 that provide impedance matching over the operating frequency range of the RF generator 125, or (ii) adjust the capacitance and / or inductance value of the impedance 128 of the matching network 129 to maintain impedance matching for the operating frequency range of the RF generator 125. This is done to minimize reflected power back to the RF generator 125. The second impedance matching network 129 provides impedance matching independent of the frequency of the RF signal output from the second RF generator 125. The second RF matching network 129 includes impedances (e.g., capacitors and inductors) 128 that provide power to RF electrodes such as RF electrodes 131, 133 in the plates 102, 103. The RF electrodes may be located on one or both of the plates 102, 103. The RF electrodes may be located, for example, near the top surface of the ESC 101 when used as clamping electrodes and / or elsewhere on the ESC 101 when used for RF biasing purposes. Some of the electrodes may be used as both clamping electrodes and RF bias electrodes.

[0085] The RF electrodes may receive power from other sources. As an example, some of the RF electrodes may receive power from the power source 135 instead of or in addition to receiving power from the second RF matching network 129. In an embodiment, the power source 135 does not include a matching network, and / or a matching network is not disposed between the power source 135 and the RF electrodes. Some of the RF electrodes may receive power from the second RF matching network 129 and / or the power source 135 to electrostatically clamp the substrate to the top plate 102. The power source 135 may be controlled by the system controller 121. The tuning circuits 139 may be connected (i) between the second RF matching network 129 and the corresponding electrodes 131, 133, 137, and (ii) between the power source 135 and the corresponding electrodes 131, 133, 137. In an embodiment, the tuning circuits 139 are disposed outside the process chamber 104, separate and downstream from the second RF matching network 129. Examples of the tuning circuits 139 are shown in FIGS. 2-11.

[0086] The gas delivery system 130 includes one or more gas sources 132-1, 132-2, ..., and 132-N (collectively, gas sources 132), where N is an integer greater than zero. The gas sources 132 provide one or more precursors and their gas mixtures. The gas sources 132 may also provide etching gases, carrier gases, and / or purge gases. Vaporized precursors may also be used. The gas sources 132 are connected to a manifold 140 by valves 134-1, 134-2, ..., and 134-N (collectively, valves 134), and mass flow controllers 136-1, 136-2, ..., and 136-N (collectively, mass flow controllers 136). The output of the manifold 140 is provided to the process chamber 104. By way of example only, the output of the manifold 140 is provided to a showerhead 109.

[0087] The substrate processing system 100 further includes a cooling system 141 including a temperature controller 142 that may be connected to the TCE 110. In one embodiment, the TCE 110 is not included. Although shown separate from the system controller 121, the temperature controller 142 may be implemented as part of the system controller 121. One or more of the plates 102, 103 may include multiple temperature control zones (e.g., four zones, each of the zones including four temperature sensors).

[0088] The temperature controller 142 can control the operation, and thus the temperature, of the TCE 110 and the temperature of the plates 102, 103 and the substrate (e.g., substrate 107). The temperature controller 142 and / or the system controller 121 can control the flow rate of a backside gas (e.g., helium) into the gas channel 115 to cool the substrate by controlling the flow from one or more of the gas sources 132 into the gas channel 115. The temperature controller 142 can also communicate with the coolant assembly 146 and control the flow (pressure and flow rate of the cooling fluid) of a first coolant through the channel 116. The first coolant assembly 146 can receive the cooling fluid from a reservoir (not shown). For example, the coolant assembly 146 can include a coolant pump and a reservoir. The temperature controller 142 operates the coolant assembly 146 to flow coolant through the channel 116 to cool the base plate 103. The temperature controller 142 can control the rate at which the coolant flows and the temperature of the coolant. The temperature controller 142 controls the current supplied to the TCE 110 and the pressure and flow rate of the gas and / or coolant supplied to the channels 115, 116 based on parameters detected from the sensors 143, 144 in the processing chamber 104. The sensors 143, 144 may include resistive temperature devices, thermocouples, digital temperature sensors, temperature probes, and / or other suitable temperature sensors. The sensors 143, 144 and / or other sensors included in the substrate processing system 100 may be used to detect parameters such as temperature, gas pressure, voltage, current levels, etc. During the etching process, the substrate 107 may be heated by a predetermined temperature (e.g., 120 degrees Celsius (°C)) in the presence of the high power plasma. The flow of the gas and / or coolant through the channels 115, 116 reduces the temperature of the base plate 103, which reduces the temperature of the substrate 107 (e.g., cooling from 120°C to 80°C).

[0089] Valves 156 and pumps 158 can be used to evacuate reactants from the processing chamber 104. The system controller 121 can control the components of the substrate processing system 100, including controlling the supplied RF power levels, the pressure and flow rates of the supplied gases, RF matching, etc. The system controller 121 controls the states of the valves 156 and pumps 158. A robot 170 can be used to deliver substrates onto and remove substrates from the ESC 101. For example, the robot 170 can transfer substrates between the ESC 101 and a load lock 172. The robot 170 can be controlled by the system controller 121. The system controller 121 can control the operation of the load lock 172.

[0090] The valves, gas and / or coolant pumps, power supplies, RF generators, etc. may be referred to as actuators. The TCEs, gas channels, coolant channels, etc. may be referred to as temperature regulating elements.

[0091] The system controller 121 can control the state of the impedance of the tuning circuit 139 directly by adjusting the variable capacitance and / or inductance of the circuit components of the tuning circuit 139, or indirectly via the frequency controller 119. The frequency controller 119 can control and / or command the RF generator 125 to output an RF signal having a frequency determined to adjust the impedance of the tuning circuit 139. Alternatively, or in addition to the described frequency adjustments, the system controller 121 can directly adjust the impedance of the tuning circuit 139 by sending signals to the tuning circuit 139 to adjust the capacitance and / or inductance values ​​of the capacitors and inductors of the tuning circuit 139. Examples of capacitors and inductors are shown in FIGS. 7-11. The impedance of the tuning circuit 139 can be adjusted based on feedback signals received from sensors 143, 144, 145 and / or other sensors in one or more of the ESC 101, the process chamber 104, the second RF matching network 129, and / or the power supplies 125, 135. The sensor 145 can detect the voltage, current level, power level in the second RF matching network 129. Although the sensor 144 is shown on the base plate 103, one or more of the sensors can be located on the top plate 102. The sensor 144 can be located anywhere in the ESC 101. The sensor 143 can be located anywhere in the process chamber 104.

[0092] The system controller 121 may also control the state of the impedance 128. The state of the impedance 128 may be set such that one or more impedances of one or more outputs of the second RF matching network 129 match the impedance seen at the input of the tuning circuit 139. The impedance seen at the input of the tuning circuit 139 is based on the impedance of the ESC 101 and the tuning circuit 139. When adjusting the impedance of the tuning circuit 139, the system controller 121 may also adjust the impedance of the second RF matching network 129 accordingly.

[0093] 2-11 described below, although particular numbers of tuning circuits, impedances, clamp electrodes, RF electrodes, and / or other elements are shown, any number of each may be included. Also, although the tuning circuits, impedances, clamp electrodes, and RF electrodes are shown in particular arrangements and have particular sizes, shapes, and patterns, the depicted elements may be in different arrangements and have different sizes, shapes, and patterns.

[0094] FIG. 2 shows a capacitive coupling circuit 200 including a clamp tuned circuit 202, an RF tuned circuit 204, a clamp electrode 206, and an RF electrode 208. The impedance of the elements (e.g., capacitors and / or inductors) of the tuned circuits 202, 204 may be frequency dependent. A cross-sectional view of a showerhead (or upper electrode) 210 and an ESC 212 is shown. The showerhead 210 can be connected to a reference potential or ground 214. In one embodiment, the showerhead 210 is RF powered by the first RF matching network 127 of FIG. 1. A plasma 216 is provided between the showerhead 210 and the ESC 212. A substrate 218 is disposed on the ESC 212.

[0095] The clamp tuning circuit 202 may be used to control the clamp voltage, current level, phase, power level, and / or frequency provided to the clamp electrode 206. The RF tuning circuit 204 may be used to control the bias voltage, current level, power level, and / or frequency provided to the RF electrode 208. The tuning circuits 202, 204 may be used to control, for example, the power P inner , P outer , which can be used to adjust the voltage drop across the plasma. This may include adjusting the voltage difference between each pair of points on and across the surface of the ESC 101 of FIG. 1. Examples of tuning circuits 202, 204 are shown in FIG. 6. The tuning circuits 202, 204 may include one or more of the impedances as shown in FIG. 6. The tuning circuits 202, 204 may not include a parallel impedance path or may include a transmission line instead of a series impedance path. Exemplary parallel and series impedance paths are shown in FIG. 6. Examples of impedances that may be included in the tuning circuits 202, 204 are shown in FIGS. 7-11. The impedances may be connected in series or parallel, be shunt impedances, and / or include capacitors, inductors, resistors, reactances, transmission lines, short or open circuits, filtering elements (or filters), and / or other impedances. By way of example, the clamping electrode 206 may be circular and the RF electrode 208 may be annular.

[0096] FIG. 3 shows a capacitive coupling circuit 300 including a first clamp tuning circuit 302, a second clamp tuning circuit 303, an external RF tuning circuit 304, a first clamp electrode 306, a second clamp electrode 307, and an RF electrode 308. The impedance of the elements (e.g., capacitors and / or inductors) of the tuning circuits 302, 303, 304 may be frequency dependent. A cross-sectional view of a showerhead (or upper electrode) 310 and an ESC 312 is shown. The showerhead 310 can be connected to a reference potential or ground 314. In one embodiment, the showerhead 310 is RF powered by the first RF matching network 127 of FIG. 1. A plasma 316 is provided between the showerhead 310 and the ESC 312. A substrate 318 is disposed on the ESC 312.

[0097] Clamp tuning circuits 302, 303 may be used to control the clamp voltage, current level, power level, and / or frequency provided to clamp electrodes 306, 307. RF tuning circuit 304 may be used to control the bias voltage, current level, power level, and / or frequency provided to RF electrode 308. Tuning circuits 302, 303, and 304 receive power P from, for example, second RF matching network 129 (or first power source) of FIG. 1, power source 135 (or second power source) of FIG. 1, and / or one or more other power sources. clamp1 , P clamp2 , and P outer The tuning circuits 302, 303, 304 can be used to adjust the voltage drop across the plasma. In one embodiment, P clamp1 , P clamp2An example of the tuning circuits 302, 303, 304 is shown in FIG. 6. The tuning circuits 302, 303, 304 may include one or more of the impedances as shown in FIG. 6. The tuning circuits 302, 303, 304 may not include a parallel impedance path or may include a transmission line instead of a series impedance path. Examples of impedances that may be included in the tuning circuits 302, 303, 304 are shown in FIGS. 7-11. The impedances may be connected in series or parallel, may be shunt impedances, and / or may include capacitors, inductors, resistors, reactances, transmission lines, short or open circuits, filtering elements, and / or other impedances. By way of example, the clamping electrodes 306, 307 may be circular and the RF electrode 308 may be annular.

[0098] FIG. 4 shows a capacitive coupling circuit 400 including a clamp tuning circuit 402, an internal RF tuning circuit 404, an external RF tuning circuit 405, a clamp electrode 406, an internal bias electrode 408, and an external bias electrode 409. The impedance of the elements (e.g., capacitors and / or inductors) of the tuning circuits 402, 404, 405 may be frequency dependent. A cross-sectional view of a showerhead (or upper electrode) 410 and an ESC 412 is shown. The showerhead 410 can be connected to a reference potential or ground 414. In one embodiment, the showerhead 410 is RF powered by the first RF matching network 127 of FIG. 1. A plasma 416 is provided between the showerhead 410 and the ESC 412. A substrate 418 is disposed on the ESC 412.

[0099] The clamp tuning circuit 402 may be used to control the clamp voltage, current level, phase, power level, and / or frequency provided to the clamp electrode 406. The RF tuning circuits 404, 405 may be used to control the bias voltage, current level, power level, and / or frequency provided to the bias electrodes 408, 409. The tuning circuits 402, 404, 405 receive power P from, for example, the second RF matching network 129 (or first power source) of FIG. 1, the power source 135 (or second power source) of FIG. 1, and / or one or more other power sources. clamp , P inner , P outer The tuning circuits 402, 404, 405 can be used to adjust the voltage drop across the plasma. Examples of the tuning circuits 402, 404, 405 are shown in FIG. 6. The tuning circuits 402, 404, 405 can include one or more of the impedances as shown in FIG. 6. The tuning circuits 402, 404, 405 may not include a parallel impedance path or may include a transmission line instead of a series impedance path. Examples of impedances that may be included in the tuning circuits 402, 404, 405 are shown in FIGS. 7-11. The impedances may be connected in series or parallel, may be shunt impedances, and / or may include capacitors, inductors, resistors, reactances, transmission lines, short or open circuits, filtering elements, and / or other impedances. By way of example, the clamping electrode 406 and the internal bias electrode 408 can be circular, and the external bias electrode 409 can be annular.

[0100] FIG. 5 shows a capacitive coupling circuit 500 including a clamp tuning circuit 502, a first internal RF tuning circuit 504, a second internal tuning circuit 505, an external RF tuning circuit 506, a clamp electrode 507, a first internal bias electrode 508, a second internal bias electrode 509, and an external bias electrode 510. The impedance of the elements (e.g., capacitors and / or inductors) of the tuning circuits 502, 504, 505, 506 may be frequency dependent. A cross-sectional view of a showerhead (or upper electrode) 511 and an ESC 512 is shown. The showerhead 511 can be connected to a reference potential or ground 514. In one embodiment, the showerhead 511 is RF powered by the first RF matching network 127 of FIG. 1. A plasma 516 is provided between the showerhead 511 and the ESC 512. A substrate 518 is disposed on the ESC 512.

[0101] Clamp tuning circuit 502 may be used to control the clamp voltage, current level, power level, and / or frequency provided to clamp electrode 507. RF tuning circuits 504, 505, 506 may be used to control the bias voltage, current level, phase, power level, and / or frequency provided to bias electrodes 508, 509, 510. Tuning circuits 502, 504, 505, 506 receive power P from, for example, second RF matching network 129 of FIG. 1 (or first power source), power source 135 of FIG. 1 (or second power source), and / or one or more other power sources. clamp , P inner1 , P inner2 , P outerThe tuning circuits 502, 504, 505, 506 can be used to adjust the voltage drop across the plasma. Examples of tuning circuits 502, 504, 505, 506 are shown in FIG. 6. The tuning circuits 502, 504, 505, 506 can include one or more of the impedances as shown in FIG. 6. The tuning circuits 502, 504, 505, 506 may not include a parallel impedance path or may include a transmission line instead of a series impedance path. Examples of impedances that may be included in the tuning circuits 502, 504, 505, 506 are shown in FIGS. 7-11. The impedances may be connected in series or parallel, may be shunt reactances, and / or may include capacitors, inductors, resistors, reactances, transmission lines, short or open circuits, filtering elements, and / or other impedances. By way of example, the clamp electrode 507 and the bias electrodes 508, 509 may be circular, and the outer bias electrode 510 may be annular.

[0102] FIG. 6 shows a tuning circuit 600 for an electrode (or load) 602, such as a clamp electrode or a bias electrode. The tuning circuit 600 can replace any of the tuning circuits 202, 204, 302, 304, 305, 402, 404, 405, 502, 504, 505, and 506 of FIGS. 2-5. An example of the tuning circuit 600 is shown in FIGS. 9-10. The tuning circuit 600 can receive RF power from an RF power source 604, such as one of the power sources 129, 135 of FIG. 1. The RF power source 604 can include a matching network and / or an RF generator, such as the matching network 129 and the RF generator 125. The tuning circuit 600 can include a series impedance path 605 with a series impedance set 606 and a parallel impedance path 607 with a parallel impedance set 608. The impedances of the impedance sets 606, 608 can be frequency dependent. The series impedance set 606 includes one or more impedances 609 connected in series between the RF power source 604 and the load 602. The series impedance set 606 and the one or more impedances 609 are connected between the load 602 and a source terminal 610. The source terminal 610 is connected to the RF power source 604. The parallel impedance set 608 is connected between (i) a source terminal 610 connected between the RF power source 604 and the series impedance set 606, and (ii) a reference terminal or ground 612. The parallel impedance set 608 may include one or more impedances 613 connected in parallel between the source terminal 610 and the reference terminal 612.

[0103] One or more of the impedances 609, 613 may be fixed impedances. Additionally or alternatively, one or more of the impedances 609, 613 may be variable impedances that may be adjusted by the system controller 121 of FIG. 1 based on, for example, a current process recipe, current operating parameters, parameters measured and / or determined based on the output of one or more sensors (e.g., sensor 143 of FIG. 1), and / or characteristics and / or properties of the processing system, the ESC, and the substrate.

[0104] 7-11 below, specific impedances are shown, but other impedances may be included. The impedances may include "stray" inductance from wires and / or other conductive circuit elements.

[0105] FIG. 7 shows that the tuning circuit 700 may be connected to a single RF power supply 702. The tuning circuit 700 includes series connected inductors L1-L3 and capacitors C1-C3 for two clamping electrodes 706, 708 and a bias electrode ring 710. The impedances of the inductors L1-L3 and capacitors C1-C3 are frequency dependent. The RF power supply 702 may operate similarly to the power supplies 129, 135 of FIG. 1 and may be connected to a reference terminal or ground 711. The RF power supply 702 may include a matching network and / or a matching network 129 and an RF generator such as the RF generator 125. In one embodiment (referred to as a grounded pedestal configuration), the RF power supply 702 is not included and the capacitors C1-C3 are connected to ground 711.

[0106] In FIG. 7, a cross-sectional view of the electrodes 706, 708, 710 is shown. The electrodes 706, 708, 710 may be arranged concentrically. L1 and C1 are connected in series between (i) the RF power source 702 and a common terminal 712 and (ii) the first inner clamping electrode 706. L2 and C2 are connected in series between (i) the RF power source 702 and a common (or source) terminal 712 and (ii) a central terminal 714 that is connected to two points on the bias electrode ring 710. L3 and C3 are connected in series between (i) the RF power source 702 and a common terminal 712 and (ii) the second inner clamping electrode 708.

[0107] Inductors L1-L3 and capacitors C1-C3 may have fixed values ​​or may be variable devices controlled by system controller 121 of Figure 1, as described above. Although inductors L1-L3 and capacitors C1-C3 are shown, other impedances may be incorporated into tuning circuit 700.

[0108] 7 provides an example where power is provided to a common node (or terminal) and split to provide power to multiple electrodes. The impedance of each path to each electrode can be varied by the impedance (or series connected inductance and capacitance) in the corresponding path.

[0109] FIG. 8 shows that the tuning circuit 800 may be connected to a single RF power supply 802. The tuning circuit 800 includes shunt inductors L1-L3 and shunt capacitors C1-C3 for the two clamp electrodes 804, 806 and the bias electrode ring 808. The impedances of the shunt inductors L1-L3 and shunt capacitors C1-C3 are frequency dependent. The RF power supply 802 may operate similarly to the power supplies 129, 135 of FIG. 1 and may be connected to a reference terminal or ground 811. The RF power supply 802 may include a matching network and / or a matching network 129 and an RF generator such as the RF generator 125. The RF power supply 802 is connected to a common (or source) terminal 812 that is connected to the clamp electrodes 804, 806 and a central terminal 814.

[0110] In one embodiment (referred to as a grounded pedestal configuration), RF power source 802 is not included and terminal 812 is connected to ground 811. When terminal 812 is connected to ground 811, one or more series connected impedances can be connected (i) between node 820 and ground 811, (ii) between node 822 and ground 811, and / or between node 824 and ground 811. The one or more series connected impedances described may be similar to impedances L1-L3 and C1-C3 or may include other impedances. This may occur, for example, when RF power is provided to the corresponding showerheads.

[0111] A cross-sectional view of the electrodes 804, 806, 808 is shown. The electrodes 804, 806, 808 may be arranged concentrically. L1 and C1 are connected in parallel between a node (or first terminal) 820 and ground 811. The first terminal 820 is connected between a common terminal 812 and the first clamp electrode 804. L2 and C2 are connected in parallel between a node (or second terminal) 822 and ground 811. The second terminal 822 is connected between the common terminal 812 and the first clamp electrode 804. L3 and C3 are connected in parallel between a node (or third terminal) 824 and ground 811. The third terminal 824 is connected between the common terminal 812 and the second clamp electrode 806.

[0112] Inductors L1-L3 and capacitors C1-C3 may have arbitrary and / or predetermined fixed values, or may be variable devices controlled by system controller 121 of Figure 1, as described above. Although inductors L1-L3 and capacitors C1-C3 are shown, other impedances may be incorporated into tuned circuit 800.

[0113] 8 provides another example where power is provided to a common node and split to provide power to multiple electrodes. The impedance of each path to each electrode can be changed by a shunt impedance (or shunt inductance and capacitance) connected to the corresponding path.

[0114] FIG. 9 shows a tuning circuit 900 connected to dual RF power supplies 902, 904. The tuning circuit 900 includes series connected inductors L1-L3 and capacitors C1-C3 for two clamp electrodes 906, 908 and a bias electrode ring 910, as well as shunt inductors L4-L6 and capacitors C4-C6. The impedances of the inductors L1-L6 and capacitors C1-C6 are frequency dependent. The RF power supplies 902, 904 may operate similarly to the power supplies 129, 135 of FIG. 1 and may be connected to a reference terminal or ground 911. The RF power supplies 902, 904 may include a matching network and / or an RF generator, such as the matching network 129 and the RF generator 125. The RF power supplies 902, 904 are connected to a common (or source) terminal 912 and may provide power at the same or different frequencies.

[0115] In one embodiment (referred to as a grounded pedestal configuration), RF power sources 902, 904 are not included and terminal 912 is connected to ground 911. When terminal 912 is connected to ground 911, one or more series connected impedances can be connected (i) between node 920 and ground 911, (ii) between node 922 and ground 911, and / or between node 924 and ground 911. The one or more series connected impedances described may be similar to impedances L1-L3 and C1-C3 or may include other impedances. This may occur, for example, when RF power is provided to the corresponding showerheads.

[0116] Inductor L1 and capacitor C1 are connected in series between a common terminal 912 and the first clamp electrode 906. Inductor L2 and capacitor C2 are connected in series between a central terminal 914 and the common terminal 912. The central terminal is connected to two points on the bias electrode ring 910.

[0117] A cross-sectional view of the electrodes 906, 908, 910 is shown. The electrodes 906, 908, 910 may be arranged concentrically. L4 and C4 are connected in parallel between a node (or first terminal) 920 and ground 911. The first terminal 920 is connected between the capacitor C1 and the common terminal 912. L5 and C5 are connected in parallel between a node (or second terminal) 922 and ground 911. The second terminal 922 is connected between the capacitor C2 and the common terminal 912. L6 and C6 are connected in parallel between a node (or third terminal) 924 and ground 911. The third terminal 924 is connected between the capacitor C3 and the common terminal 912.

[0118] Inductors L1-L6 and capacitors C1-C6 may have arbitrary and / or predetermined fixed values ​​or may be variable devices controlled by system controller 121 of Figure 1, as described above. Although inductors L1-L6 and capacitors C1-C6 are shown, other impedances may be incorporated into tuned circuit 900. L4-L6 and C4-C6 may be any network, but may not include inductors and / or capacitors.

[0119] FIG. 10 shows that two tuning circuits 1000, 1002 may be connected to respective RF power supplies 1004, 1006. The first tuning circuit 1000 includes series-connected inductors L1, L3 and capacitors C1, C3 for the two clamp electrodes 1010, 1012, and shunt inductors L4, L6 and capacitors C4, C6. The impedances of the inductors L1-L6 and capacitors C1-C6 are frequency-dependent. The second tuning circuit 1002 includes series-connected inductor L2 and capacitor C2 for the bias electrode ring 1014, and shunt inductor L5 and capacitor C5. The RF power supplies 1004, 1006 may operate similarly to the power supplies 129, 135 of FIG. 1 and may be connected to a reference terminal or ground 1016. The RF power supplies 1004, 1006 may include a matching network and / or a matching network 129 and an RF generator such as the RF generator 125. The RF power supply 1004 is connected to a common (or source) terminal 1018 that is connected to C1, C3, C4, C6, L4, L6. The RF power supply 1006 is connected to a center terminal 1020 via C2 and L2. The RF power supplies 1004, 1006 may provide power at the same frequency or at different frequencies.

[0120] Inductor L1 and capacitor C1 are connected in series between the common terminal 1018 and the first clamping electrode 1010. Inductor L2 and capacitor C2 are connected in series between the central terminal 1020 and the RF power supply 1006. The central terminal 1020 is connected to two points on the bias electrode ring 1014.

[0121] A cross-sectional view of the electrodes 1010, 1012, 1014 is shown. The electrodes 1010, 1012, 1014 may be arranged concentrically. L4 and C4 are connected in parallel between a first terminal 1030 and ground 1016. The first terminal 1030 is connected between the capacitor C1 and the common terminal 1018. L5 and C5 are connected in parallel between a second terminal 1032 and ground 1016. The second terminal 1032 is connected between the capacitor C2 and the common terminal 1018. L6 and C6 are connected in parallel between a third terminal 1034 and ground 1016. The third terminal 1034 is connected between the capacitor C3 and the common terminal 1018.

[0122] Inductors L1-L6 and capacitors C1-C6 may have arbitrary and / or predetermined fixed values ​​or may be variable devices controlled by system controller 121 of Figure 1, as described above. Although inductors L1-L6 and capacitors C1-C6 are shown, other impedances may be incorporated into tuned circuit 1000. L4-L6 and C4-C6 may be any network, but may not include inductors and / or capacitors.

[0123] In one embodiment, the RF power source 1004 is not included and the terminal 1018 is connected to the ground 1016. In another embodiment, the RF power source 1006 is not included and the terminal 1032 is connected to the ground 1016. In yet another embodiment, neither of the RF power sources 1004, 1006 is included and both the terminals 1018 and 1032 are connected to the ground 1016. When the terminal 1018 and / or the terminal 1032 are connected to the ground 1016, one or more series connected impedances can be connected (i) between the node 1030 and the ground 1016, (ii) between the node 1034 and the ground 1016, and / or between the node 1032 and the ground 1016. The one or more series connected impedances described can be similar to the impedances L1-L3 and C1-C3 or can include other impedances. This can occur, for example, when RF power is provided to the corresponding showerhead.

[0124] FIG. 11 shows a tuning circuit 1100 including parallel connected capacitors C1, C2 and inductors L1, L2 for two clamp electrodes 1102, 1104 and a bias electrode ring 1106. The impedances of the inductors L1-L2 and capacitors C1-C2 are frequency dependent. The electrodes 1102, 1104, 1106 may be arranged concentrically. The capacitors C1 and C2 are connected in series (i) between the clamp electrodes 1102, 1104 and (ii) between the power supply terminals 1110, 1112. The inductors L1, L2 are connected in parallel with the capacitors C1, C2, respectively, and are connected in series (i) between the clamp electrodes 1102, 1104 and (ii) between the power supply terminals 1110, 1112. The center terminals 1114, 1116 are connected between the capacitors C1, C2 and between the inductors L1, L2, respectively. The center terminals 1114, 1116 are connected to both (i) two points on the bias electrode ring 1106 and (ii) a third (or center) power supply terminal 1118. The power supply terminals 1110, 1112 are connected to the clamp electrodes 1102, 1104, respectively. The power supply terminals 1110, 1112, 1118 can be connected to respective power supplies, such as any of the power supplies disclosed herein. In one embodiment, one or more of the power supply terminals 1110, 1112, 1118 are not connected to an RF power supply, but are connected to a reference terminal or ground.

[0125] Inductors L1-L2 and capacitors C1-C2 may have arbitrary and / or predetermined fixed values ​​or may be variable devices controlled by system controller 121 of Figure 1, as described above. Although inductors L1-L2 and capacitors C1-C2 are shown, other impedances may be incorporated into tuned circuit 1100. Inductors L1-L2 and capacitors C1-C2 are coupling elements connected between the electrodes and provide power to each electrode at multiple frequencies.

[0126] Tuned circuit 1100 may be used in combination with any of the circuits shown in Figures 3, 5, and 7-10. For example, capacitors C1, C2 and inductors L1, L2 may be similarly connected to electrodes 306, 307 and electrode ring 308 of Figure 3, electrodes 508, 509 and electrode ring 510 of Figure 5, electrodes 706, 708 and electrode ring 710 of Figure 7, electrodes 804, 806 and electrode ring 808 of Figure 8, electrodes 906, 908 and electrode ring 910 of Figure 9, and electrodes 1010, 1012 and electrode ring 1014 of Figure 10.

[0127] In the above-mentioned examples of Figures 2-11, when power is provided at multiple frequencies, the path to a given electrode may include a frequency-dependent filtering element that provides power to that electrode at a particular frequency. The impedances described above may include a frequency-dependent filtering element. In addition, the power provided to the different electrodes may be provided by separate (or different) power sources operating at the same or different frequencies, whereby the power provided by the power sources is at the same or different frequencies. Figures 9-10 show an example including multiple power sources. Alternatively, one or more of the power sources may not be included and the corresponding terminal (e.g., terminals 912, 1018, 1032) may be connected to a reference terminal or ground.

[0128] FIG. 12 illustrates an exemplary method of operating a substrate processing system, including setting and adjusting the frequency of an RF generation signal and optionally adjusting capacitance and inductance values ​​of a tuning circuit for an electrode of an electrostatic chuck. In one embodiment, the capacitors and inductors of the tuning circuit are maintained at fixed values ​​while one or more frequencies are adjusted to adjust the spatial power distribution across the ESC (e.g., ESC 101 of FIG. 1). Spatial power distribution refers to the power distribution across the ESC. This may include lateral, radial, axial, vertical, azimuthal, etc. distribution. Although the following operations are primarily described with respect to the embodiment of FIGS. 1-11, the operations can be easily modified to apply to other embodiments of the present disclosure. The operations may be performed iteratively. The operations may be performed, for example, by the system controller 121 and / or the frequency controller 119 of FIG. 1.

[0129] The method may begin at 1200. At 1202, a process to be performed is selected. Exemplary processes are cleaning processes, etching processes, deposition processes, annealing processes, etc. At 1204, a recipe including system operating parameters is determined for the selected process being performed. Exemplary system operating parameters are: gas pressure and flow rates; process chamber temperature, ESC temperature, and substrate temperature; center frequency of the RF signal output from the RF generator, and corresponding frequency operating range; total power supplied to each set of one or more electrodes in each of the multiple zones of the electrodes; RF bias voltage; clamp voltage; electrode voltage, current level, power level, and / or frequency, etc. By way of example, the frequency operating range may be ±5% or more of the center frequency. By way of example, the RF generator may have a center frequency of 13.56 megahertz (MHz), and during processing, the frequency of the RF signal output from the RF generator may be adjusted between 12.882 and 14.238 MHz. As another example, the RF generator may have a center frequency of 20 MHz, and during processing, the frequency of the RF signal output from the RF generator may be adjusted between 18 and 22 MHz. The frequency adjustment is not performed for the purpose of impedance matching to minimize reflected power, but is performed during processing, for example, after the plasma is struck to adjust the power distribution in the ESC.

[0130] At 1206, characteristics and / or properties of the process chamber, the ESC, and the substrate are determined. Exemplary characteristics and properties are the geometric values ​​of the process chamber, the configuration of the ESC, the heating and cooling characteristics of the ESC (e.g., heating and cooling rates), the size of the ESC, the configuration of the substrate, the material of the ESC and / or the substrate, etc. This may also include: the number of electrodes per zone; the number of zones; and the number of clamping electrodes, RF electrodes, and / or combinations of clamping and RF electrodes. Some of the electrodes in the ESC 101 may be used for both clamping and RF bias purposes, and thus both clamping and RF bias voltages are provided.

[0131] At 1208, system operating parameters may be set by the system controller 121 and / or the frequency controller 119. This may include controlling the operation of the actuators described above. At 1210, an impedance value of the tuning circuit is set based on the selected process, recipe, and system operating parameters. The impedance value may also, or alternatively, be set based on characteristics and / or properties of the processing chamber, the ESC, and / or the substrate. By way of example, a look-up table relating impedance values ​​to other parameters, features, and / or properties described herein may be stored in a memory of the system controller 121 and / or accessed by the system controller 121. The system controller 121 may also set the impedance 128 of the second RF matching network 129, as described above.

[0132] At 1212, a substrate can be placed on the ESC, which may include providing a clamping voltage to clamp the substrate to the ESC. At 1214, a processing operation is performed. Exemplary processing operations are cleaning operations, gas flow, plasma flow and impingement, etching operations, deposition operations, annealing operations, post-annealing operations, purging the process chamber, etc.

[0133] Operations 1216, 1218, 1220, 1222 may be performed while performing operation 1212. At 1216, sensor output signals comprising sensor output data of the substrate processing system are monitored, which may include receiving signals from sensors 143, 144, 145 of FIG.

[0134] At 1218, the parameters may be determined based on the sensor output signals, data and / or corresponding measurements from the sensors 143, 144, 145 and / or other sensors, such as temperature, gas pressure, frequency, voltage, current level, power level, etc. of the RF signal generated by the RF generator. The frequency may be adjusted while providing the same amount of total power to the RF and / or clamp electrodes. By way of example, and referring to FIG. 7, RF power supply 702 may provide an RF signal having a particular frequency to electrodes 706, 708, 710 via L1-L3 and C1-C3.

[0135] The power distribution to the electrodes 706, 708, 710 depends on the frequency and impedance values ​​of L1-L3 and C1-C3. The frequency of the RF signal can be adjusted to adjust the power distribution. By adjusting the frequency, the effective impedance of L1-L3 and C1-C3 changes. The inductance and capacitance values ​​of L1-L3 and C1-C3 can be fixed or adjusted to adjust the power distribution. The amount of power distributed to the electrodes 706, 708, and 710 may be the same or different depending on the frequency of the RF signal and the impedance values ​​of L1-L3 and C1-C3. In one embodiment, the total amount of power provided to the electrodes 706, 708, 710 remains at a fixed level while the frequency of the RF signal provided to the tuned circuit and / or the impedance, inductance, and / or capacitance are changed.

[0136] In 1220, the system controller 121 and / or the frequency controller 119 may determine whether to adjust the frequency of the RF generation signal, the impedance value of the tuning circuit, and / or the capacitance and inductance values ​​of the tuning circuit based on the measured and / or determined parameters. In one embodiment, a target impedance value is determined and then the frequency is set based on the target impedance value. The capacitance and inductance values ​​of the capacitors and inductors of the tuning circuit may be adjusted based on the target impedance value and the set frequency. These decisions may be based on the selected process, recipe, system operating parameters, and / or characteristics and / or properties of the processing chamber, ESC, and / or substrate. The properties may change dynamically. In one embodiment, the impedance value is adjusted to follow a predetermined trajectory based on the change in the properties. The predetermined trajectory may be, for example, a predetermined curve stored in the memory. A table relating the impedance value to other values ​​and parameters may be stored in the memory. If one or more impedance values ​​are changed, operation 1222 may be performed, otherwise operation 1216 may be performed. In one embodiment, the power supplied to one or more electrodes is modulated by changing the value of the corresponding impedance. This can be done to alter the stress, thickness, uniformity, refractive index, etch rate, deposition rate, and / or other intrinsic values ​​and / or profile parameters of the substrate.

[0137] In 1222, the system controller 121 adjusts one or more impedance values ​​of the tuning circuit, for example, by changing the inductance, capacitance, impedance, and / or resistance of one or more capacitors and inductors of the tuning circuit. The adjustment (or amount of adjustment) can be based on measured and / or determined parameters, selected process, recipe, system operating parameters, and / or characteristics and / or properties of the processing chamber, ESC, and / or substrate. The system controller 121 can also adjust the impedance 128 of the second RF matching network 129, as described above. Following operation 1222, operation 1216 can be performed.

[0138] At 1224, the system controller 121 determines whether to modify the current process or to implement another process. Operation 1202 may be performed if the current process is modified or another process is implemented. If the current process is not modified and no more processes are implemented, the method may end at 1226.

[0139] The above operations are meant to be illustrative examples. Operations may be performed sequentially, synchronously, simultaneously, consecutively, during overlapping time periods, or in different orders depending on the application. Also, depending on the implementation and / or sequence of events, none of the operations may be performed or skipped.

[0140] FIG. 13 shows an example of an ESC (or substrate support) 1300 including an outer ring electrode 1302 and two inner electrodes 1304, 1306. The electrodes 1302, 1304, 1306 are provided as examples of two inner electrodes and an outer ring electrode, as shown in FIG. 3, FIG. 5, and FIG. 7-FIG. 11. The inner electrodes 1304, 1306 may be "D" shaped electrodes and disposed radially inward of the outer ring electrode 1302. Gaps 1308 and 1310 exist between the inner electrodes 1304, 1306 and the outer ring electrode 1302. The outer ring electrode 1302 may include an outer ring 1311 and a linear shaped central member 1312 extending between the inner electrodes 1304, 1306. Gaps 1314 and 1316 may exist between the inner electrodes 1304, 1306 and the central member 1312. The central member 1312 extends through a central region 1320 of the outer ring 1311 between the inner electrodes 1304, 1306 and equally branches off the central region 1320. In one embodiment, power is provided to the outer ring electrode 1302 at the center of the central member 1312. Power can be provided to portions of the inner electrodes 1304, 1306 near the center of the central member 1312.

[0141] The above examples provide an RF tuning system for indirectly and directly adjusting the impedance of a tuning circuit to vary the power distribution to an electrode in an ESC. Frequency adjustments at the RF generator can be used to rapidly and drastically change the power distribution, which affects the outcome of the on-wafer process. The RF tuning system can perform power modulation to the electrode through frequency adjustment and / or direct physical adjustment of the impedance of the tuning circuit. The use of frequency adjustments in combination with direct adjustment of the impedance can increase the tuning range and / or improve the tuning accuracy. The tuning circuit has an impedance to set and adjust parameters of the electrode in the electrostatic chuck and / or other pedestal (or substrate support). The pedestal does not have to be an electrostatic chuck. This provides spatial tuning of the power delivered to the plasma in the processing chamber (e.g., a PECVD reactor). The examples provide new control parameters for film deposition and uniformity. As an example including an outer annular electrode and an inner circular electrode, the relative intensity of the plasma around the periphery of the substrate can be changed by modulating the power supplied to the electrodes. This can be achieved by modulating (or adjusting) the corresponding impedances as described above. Unlike varying gas parameters or overall power, modulation of the power provided to the electrodes does not necessarily change a global parameter that affects the entire substrate, but rather may vary selected regions of the substrate film (e.g., the circumferential edge of the substrate film). This differs from conventional techniques involving the use of metal or dielectric rings that vary the outer portions of the plasma, which may result in fluctuations in gas flow, and thus have an overall effect of varying more of the substrate film than the circumferential edge of the film.

[0142] The foregoing description is merely exemplary in nature and is not intended to limit the disclosure, its application, or uses in any way. The broad teachings of the disclosure can be embodied in various forms. Thus, while the disclosure includes specific examples, the true scope of the disclosure should not be limited to such examples, since other modifications will become apparent upon review of the drawings, the specification, and the following claims. It should be understood that one or more steps in a method may be performed in different orders (or simultaneously) without altering the principles of the disclosure. Furthermore, although each embodiment is described above as having certain features, any one or more of these features described with respect to any embodiment of the disclosure can be implemented in other embodiments and / or combined with any features of the other embodiments (even if such combination is not explicitly described). In other words, the described embodiments are not mutually exclusive, and it is within the scope of the disclosure to substitute one or more embodiments for one another.

[0143] Spatial and functional relationships between elements (e.g., modules, circuit elements, semiconductor layers, etc.) are described using various terms such as "connected," "engaged," "coupled," "adjacent," "next to," "on," "above," "below," and "disposed." Also, when a relationship between a first element and a second element is described in the above disclosure, unless expressly described as "direct," the relationship may be a direct relationship in which there are no other intervening elements between the first element and the second element, but may also be an indirect relationship in which there are one or more intervening elements (spatial or functional) between the first element and the second element. As used herein, the phrase at least one of A, B, and C should be interpreted in the sense of a logic (A or B or C) using a non-exclusive logical OR, and not in the sense of "at least one of A, at least one of B, and at least one of C."

[0144] In some implementations, the controller is part of a system, and such a system may be part of the examples described above. Such a system may include semiconductor processing equipment, including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling system operations before, during, and after processing of a semiconductor wafer or substrate. Such electronics may be referred to as a "controller" and may control various components or subparts of one or more systems. The controller may be programmed to control any of the processes disclosed herein depending on the processing requirements and / or type of system. Such processes may include delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and motion settings, wafer loading and unloading from the tool, and wafer loading and unloading from other transport tools and / or load locks connected or interlocked with the particular system.

[0145] Broadly, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, i.e., microcontrollers, that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. The operational parameters may, in some embodiments, be part of a recipe defined by a process engineer to accomplish one or more processing steps in the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0146] The controller, in some embodiments, may be part of, coupled to, or a combination of a computer that is integrated or coupled with the system or otherwise networked to the system. For example, the controller may be in the "cloud" or all or part of a fab host computer system. This allows for remote access of wafer processing. The computer may allow remote access to the system to monitor the current progress of a fabrication operation, review the history of past fabrication operations, review trends or performance criteria from multiple fabrication operations, modify parameters of a current process, set processing steps following a current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system over a network. Such a network may include a local network or the Internet. The remote computer may include a user interface that allows entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data identifies parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool that the controller is configured to interface with or control. Thus, as discussed above, the controller may be distributed, for example, by including one or more individual controllers that are networked together and cooperate toward a common purpose (such as the processes and controls described herein). An example of a distributed controller for such purposes would include one or more integrated circuits on the chamber that communicate with one or more integrated circuits that are remotely located (e.g., at the platform level or as part of a remote computer) and that are coupled to control the processes in the chamber.

[0147] Exemplary systems may include, but are not limited to, a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a tracking chamber or module, and any other semiconductor processing system that may be associated with or used in the fabrication and / or manufacturing of semiconductor wafers.

[0148] As described above, depending on the process step or steps being performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used for material transport to and from tool locations and / or load ports within a semiconductor manufacturing factory. The present invention can be realized, for example, in the following manner. Application example 1: 1. A substrate processing system, comprising: a matching network configured to receive a first radio frequency signal having a first frequency from a radio frequency generator and to impedance match an input of the matching network to an output of the radio frequency generator; a first tuning circuit comprising a first circuit component distinct from the matching network and having a first impedance, the first tuning circuit configured to receive an output of the matching network and to output a second radio frequency signal to a first electrode on a substrate support; a controller configured to determine a target impedance for the first circuit component, and based on the target impedance, send a signal to the radio frequency generator to adjust the first frequency of the first radio frequency signal received at the matching network to a second frequency to change the first impedance of the first circuit component to match the target impedance; A substrate processing system comprising: Application example 2: A substrate processing system according to Application Example 1, a radio frequency generator having a center frequency, the radio frequency generator configured to generate the first radio frequency signal having the first frequency based on a control signal; the controller is configured to generate the control signal; the first frequency is within a predetermined range of the center frequency; Substrate processing system. Application example 3: A substrate processing system according to Application Example 1, The matching network does not change the first frequency of the first radio frequency signal and provides the first radio frequency signal to the first tuned circuit. Application example 4: A substrate processing system according to Application Example 1, The controller is configured to tune the first frequency to the second frequency independently of impedance matching the input of the matching network to the output of the radio frequency generator. Application example 5: A substrate processing system according to Application Example 1, The controller is configured to tune the first frequency to the second frequency without affecting an impedance match between the matching network and the radio frequency generator. Application example 6: A substrate processing system according to Application Example 1, The matching network is configured to maintain an impedance match between an input of the matching network and an output of the radio frequency generator while the controller tunes the first frequency to the second frequency. Example 7: A substrate processing system according to Application Example 1, the first tuning circuit comprises the first circuit component and a second circuit component; the first circuit component is connected to the first electrode; the second circuit component is connected to a second electrode on the substrate support; the controller is configured to tune the first frequency to the second frequency to adjust the first impedance of the first circuit component and the second impedance of the second circuit component to vary power distribution from the first tuned circuit to the first electrode and the second electrode. Substrate processing system. Application example 8: A substrate processing system according to Application Example 1, A substrate processing system, wherein the frequency of the second radio frequency signal is the same as the frequency of the first radio frequency signal. Example 9: A substrate processing system according to Application Example 1, The controller is configured to adjust a capacitance or inductance of the first circuit component in addition to adjusting the first frequency to the second frequency when the first impedance is changed to match the target impedance. Example 10: A substrate processing system according to Application Example 1, The substrate processing system, wherein the controller is configured to maintain at least one of a capacitance or an inductance of the first circuit component at a fixed value while adjusting the first impedance. Example 11: A substrate processing system according to Application Example 1, the first tuning circuit distributes a total amount of power received from the matching network to the first circuit component and the second circuit component; the controller is configured to adjust the first frequency to the second frequency and adjust a first portion of the total amount of power provided to the first circuit component and a second portion of the total amount of power provided to the second circuit component. Substrate processing system. Example 12: A substrate processing system according to Application Example 1, A source terminal; the substrate support comprising the first electrode and the second electrode, the first electrode and the second electrode receiving power from the matching network via the source terminal; Further equipped with The first tuning circuit comprises: a first impedance set connected in series between the first electrode and the matching network, the first impedance set receiving the second radio frequency signal from the matching network via the source terminal; or a second impedance set connected between an output of the matching network and a reference terminal, the second impedance set receiving the second radio frequency signal from the matching network via the source terminal; At least one of the following: Substrate processing system. Application example 13: The substrate processing system of Application Example 12, Further comprising a second tuning circuit, a third tuning circuit, and a third electrode; the first tuning circuit is connected to the first electrode to modify the output of the matching network to generate the second radio frequency signal; the second tuning circuit is connected to the second electrode and configured to modify the output of the matching network to generate a third radio frequency signal provided to the second electrode; the third tuning circuit is connected to the third electrode and configured to modify the output of the matching network to generate a fourth radio frequency signal provided to the third electrode. Substrate processing system. Example 14: A substrate processing system according to Application Example 1, The first circuit component is connected to the first electrode and a second electrode on the substrate support and affects power distribution to the first electrode and the second electrode. Application example 15: 1. A substrate processing system, comprising: a matching network configured to receive a first radio frequency signal having a first frequency from a radio frequency generator and to impedance match an input of the matching network to an output of the radio frequency generator; a tuning circuit distinct from the matching network, the tuning circuit configured to output a second radio frequency signal to a first electrode on a substrate support and to output a third radio frequency signal to a second electrode on the substrate support based on an output of the matching network; and a controller configured to adjust power distribution to the first electrode and the second electrode in the substrate support by sending a signal to the radio frequency generator to adjust the first frequency of the first radio frequency signal received at the matching network to a second frequency; A substrate processing system comprising: Application example 16: The substrate processing system of Application Example 15, The matching network does not change the first frequency of the first radio frequency signal and provides the first radio frequency signal to the tuned circuit. Example 17: The substrate processing system of Application Example 15, The controller is configured to tune the first frequency to the second frequency independently of impedance matching the input of the matching network to the output of the radio frequency generator. Application example 18: The substrate processing system of Application Example 15, The controller is configured to tune the first frequency to the second frequency without affecting an impedance match between the matching network and the radio frequency generator. Example 19: The substrate processing system of Application Example 15, The matching network is configured to maintain an impedance match between an input of the matching network and an output of the radio frequency generator while the controller tunes the first frequency to the second frequency. Example 20: The substrate processing system of Application Example 15, the tuning circuit includes a first circuit component and a second circuit component; the first circuit component is connected to the first electrode; the second circuit component is connected to the second electrode; adjusting the first frequency to the second frequency changes a first impedance of the first circuit component and a second impedance of the second circuit component. Substrate processing system.

Claims

1. 1. A substrate processing system, comprising: a matching network configured to receive a first radio frequency signal having a first frequency from a radio frequency generator and to impedance match an input of the matching network to an output of the radio frequency generator; a first tuning circuit comprising a first circuit component distinct from the matching network and having a first impedance, the first tuning circuit configured to receive an output of the matching network and to output a second radio frequency signal to a first electrode on a substrate support; a controller configured to determine a target impedance for the first circuit component, and based on the target impedance, send a signal to the radio frequency generator to adjust the first frequency of the first radio frequency signal received at the matching network to a second frequency to change the first impedance of the first circuit component to match the target impedance; A substrate processing system comprising:

2. 2. The substrate processing system of claim 1, a radio frequency generator having a center frequency, the radio frequency generator configured to generate the first radio frequency signal having the first frequency based on a control signal; the controller is configured to generate the control signal; the first frequency is within a predetermined range of the center frequency; Substrate processing system.

3. 2. The substrate processing system of claim 1, The matching network does not change the first frequency of the first radio frequency signal and provides the first radio frequency signal to the first tuned circuit.

4. 2. The substrate processing system of claim 1, The controller is configured to tune the first frequency to the second frequency independently of impedance matching the input of the matching network to the output of the radio frequency generator.

5. 2. The substrate processing system of claim 1, The controller is configured to tune the first frequency to the second frequency without affecting an impedance match between the matching network and the radio frequency generator.

6. 2. The substrate processing system of claim 1, The matching network is configured to maintain an impedance match between an input of the matching network and an output of the radio frequency generator while the controller tunes the first frequency to the second frequency.

7. 2. The substrate processing system of claim 1, the first tuning circuit comprises the first circuit component and a second circuit component; the first circuit component is connected to the first electrode; the second circuit component is connected to a second electrode on the substrate support; the controller is configured to tune the first frequency to the second frequency to adjust the first impedance of the first circuit component and the second impedance of the second circuit component to vary power distribution from the first tuned circuit to the first electrode and the second electrode. Substrate processing system.

8. 2. The substrate processing system of claim 1, A substrate processing system, wherein the frequency of the second radio frequency signal is the same as the frequency of the first radio frequency signal.

9. 2. The substrate processing system of claim 1, The controller is configured to adjust a capacitance or inductance of the first circuit component in addition to adjusting the first frequency to the second frequency when the first impedance is changed to match the target impedance.

10. 2. The substrate processing system of claim 1, The substrate processing system, wherein the controller is configured to maintain at least one of a capacitance or an inductance of the first circuit component at a fixed value while adjusting the first impedance.

11. 2. The substrate processing system of claim 1, the first tuning circuit distributes a total amount of power received from the matching network to the first circuit component and the second circuit component; the controller is configured to adjust the first frequency to the second frequency and adjust a first portion of the total amount of power provided to the first circuit component and a second portion of the total amount of power provided to the second circuit component. Substrate processing system.

12. 2. The substrate processing system of claim 1, A source terminal; the substrate support comprising the first electrode and the second electrode, the first electrode and the second electrode receiving power from the matching network via the source terminal; Further equipped with The first tuning circuit comprises: a first impedance set connected in series between the first electrode and the matching network, the first impedance set receiving the second radio frequency signal from the matching network via the source terminal; or a second impedance set connected between an output of the matching network and a reference terminal, the second impedance set receiving the second radio frequency signal from the matching network via the source terminal; At least one of the following: Substrate processing system.

13. 13. The substrate processing system of claim 12, Further comprising a second tuning circuit, a third tuning circuit, and a third electrode; the first tuning circuit is connected to the first electrode to modify the output of the matching network to generate the second radio frequency signal; the second tuning circuit is connected to the second electrode and configured to modify the output of the matching network to generate a third radio frequency signal provided to the second electrode; the third tuning circuit is connected to the third electrode and configured to modify the output of the matching network to generate a fourth radio frequency signal provided to the third electrode. Substrate processing system.

14. 2. The substrate processing system of claim 1, The first circuit component is connected to the first electrode and a second electrode on the substrate support and affects power distribution to the first electrode and the second electrode.

15. 1. A substrate processing system, comprising: a matching network configured to receive a first radio frequency signal having a first frequency from a radio frequency generator and to impedance match an input of the matching network to an output of the radio frequency generator; a tuning circuit distinct from the matching network, the tuning circuit configured to output a second radio frequency signal to a first electrode on a substrate support and to output a third radio frequency signal to a second electrode on the substrate support based on an output of the matching network; and a controller configured to adjust power distribution to the first electrode and the second electrode in the substrate support by sending a signal to the radio frequency generator to adjust the first frequency of the first radio frequency signal received at the matching network to a second frequency; A substrate processing system comprising:

16. 16. The substrate processing system of claim 15, The matching network does not alter the first frequency of the first radio frequency signal and provides the first radio frequency signal to the tuned circuit.

17. 16. The substrate processing system of claim 15, The controller is configured to tune the first frequency to the second frequency independently of impedance matching the input of the matching network to the output of the radio frequency generator.

18. 16. The substrate processing system of claim 15, The controller is configured to tune the first frequency to the second frequency without affecting an impedance match between the matching network and the radio frequency generator.

19. 16. The substrate processing system of claim 15, The matching network is configured to maintain an impedance match between an input of the matching network and an output of the radio frequency generator while the controller tunes the first frequency to the second frequency.

20. 16. The substrate processing system of claim 15, the tuning circuit includes a first circuit component and a second circuit component; the first circuit component is connected to the first electrode; the second circuit component is connected to the second electrode; adjusting the first frequency to the second frequency changes a first impedance of the first circuit component and a second impedance of the second circuit component. Substrate processing system.

21. The substrate processing system of claim 15, The tuning circuit comprises a first circuit component connected in parallel with a second circuit component between: i) a ground reference; and ii) the matching network and the first electrode.

22. The substrate processing system of claim 21, the first circuit component is implemented as an inductor; the second circuit component being implemented as a capacitor; Substrate processing system.

23. The substrate processing system of claim 22, a second tuning circuit distinct from the matching network, the second tuning circuit outputting a fourth radio frequency signal to the first electrode, the second electrode, or a third electrode on the substrate support, the second tuning circuit comprising: a second inductor connected in parallel with a second capacitor between i) the ground reference and ii) the matching network and the second electrode.

24. The substrate processing system of claim 15, The tuning circuit receives the output of the matching network and an output of another matching network.

25. The substrate processing system of claim 15, the matching network being a first radio frequency power source; The substrate processing system, wherein the tuned circuit receives the output of the first radio frequency power source and an output of a second radio frequency power source different from the first radio frequency power source.

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