Symmetrical Semiconductor Processing Chamber

Abstract

One example is a flow module having an inner wall and an outer wall equidistant from a central axis. The flow module has radial walls connected between the outer wall and the inner wall, the outer wall, the inner wall, and two or more pairs of radial walls defining an exhaust channel and a central portion. The central portion and the exhaust channel are fluidly isolated from one another within the flow module. Two or more through holes are formed through the outer wall and are fluidly coupled to the central portion. At least two of the two or more through holes are 180 degrees apart and linearly aligned through the central axis.

Description

[Technical field]

[0001]

[0001] Embodiments of the present disclosure generally relate to a processing chamber that provides thermal, electrical, gas flow, and pumping symmetry for improved plasma uniformity control. [Background technology]

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. One such processing equipment is an etch processing chamber. During processing, the substrate is positioned on a substrate support within the etch processing chamber. Gases are introduced into the etch chamber and ignited into a plasma to etch the substrate. The plasma as the gases are symmetric across the substrate helps ensure process uniformity. Depending on the fabrication technique, the substrate support may be configured to operate at either high temperatures, such as temperatures above 200 degrees Celsius, or at cryogenic temperatures, such as temperatures below minus 100 degrees Celsius. Substrate supports configured to operate at high temperatures, or alternatively at cryogenic temperatures, have different mechanical and plumbing constraints within the etch processing chamber, resulting in unique constraints.

[0003]

[0003] Symmetry of pressure, electricity, gas flow, and temperature across a substrate can affect the uniformity of the material etched or deposited on the substrate. By precisely controlling pressure, electricity, gas flow, temperature, and conductance across the chamber, substrates can be processed within very tight tolerances. The ability to precisely control the symmetry of an etch processing chamber has a significant impact on throughput and production yield. With conventional etch processing chambers, it is difficult to provide the symmetrical process conditions desired for the manufacture of next generation devices while the demand for improved production yield and faster throughput is ever increasing. As the substrate support becomes more crowded with power and control wires, sensors, gas supplies, cooling, and other utilities, it becomes more difficult to use conventional supports for substrate support while meeting the symmetry requirements.

[0004] Therefore, there is a need to improve process symmetry in etch processing chambers. Summary of the Invention

[0005]

[0005] An embodiment of the present disclosure provides an apparatus for processing a substrate. In one example, the apparatus is disclosed as a flow module. The flow module has an inner wall. The flow module has an outer wall equidistant from a central axis. The flow module has radial walls connected between the outer wall and the inner wall, the outer wall, the inner wall, and two or more pairs of radial walls defining an exhaust channel and a central portion. The central portion and the exhaust channel are fluidly isolated from one another within the flow module. Two or more through holes are formed through the outer wall and are fluidly coupled to the central portion. At least two of the two or more through holes are 180 degrees apart and linearly aligned through the central axis.

[0006] In another embodiment, a processing chamber is provided. The processing chamber includes a process module surrounding a process region and an exhaust channel assembly. The exhaust channel assembly includes a central axis and a flow module. The flow module includes an inner wall. The flow module includes an outer wall equidistant from the central axis. The flow module includes radial walls connected between the outer wall and the inner wall, the outer wall, the inner wall, and two or more pairs of radial walls defining an exhaust channel and a central portion. The central portion and the exhaust channel are fluidly isolated from one another within the flow module. Two or more through holes are formed through the outer wall and are fluidly coupled to the central portion. At least two of the two or more through holes are 180 degrees apart and linearly aligned through the central axis. The exhaust channel assembly further includes a substrate support chassis sealingly coupled to the inner wall of the flow module. The substrate support assembly includes a support plate and a base. The support plate is disposed in the process region to support a substrate therein, the base extends from the process region of the process module to a central portion of the flow module, and the base is accessible through the two or more through holes.

[0007] In yet another embodiment, a processing platform is provided. The processing platform includes a transfer chamber having a transfer chamber robot. The processing platform includes a load lock chamber coupled to the transfer chamber and a factory interface. A plurality of processing chambers are coupled to the transfer chamber at a slit valve door, at least one of the processing chambers includes a process module surrounding a process region and an exhaust channel assembly. The exhaust channel assembly includes a central axis and a flow module. The flow module includes an inner wall and an outer wall equidistant from the central axis. The flow module includes radial walls connected between the outer wall and the inner wall, the outer wall, the inner wall, and two or more pairs of radial walls defining an exhaust channel and a central portion. The central portion and the exhaust channel are fluidically isolated from each other within the flow module. Two or more through holes are formed through the outer wall and fluidically coupled to the central portion. At least two of the two or more through holes are 180 degrees apart and linearly aligned through the central axis. The exhaust channel assembly further includes a substrate support chassis sealingly coupled to the inner wall of the flow module. The substrate support assembly includes a support plate and a base, the support plate disposed in the process region to support a substrate therein, the base extending from the process region of the process module to a central portion of the flow module, and the base accessible through two or more through holes.

[0008]

[0008] In order that the above-mentioned features of the present disclosure may be achieved and understood in detail, the present disclosure summarized above will now be more particularly described with reference to the embodiments of the present disclosure illustrated in the accompanying drawings. [Brief description of the drawings]

[0009] [Figure 1A] 1 is a schematic cross-sectional view of a processing chamber according to one or more embodiments of the present disclosure. [Figure 1B] 1 is a schematic cross-sectional view of a processing chamber according to one or more embodiments of the present disclosure. [Figure 1C]1 is a schematic cross-sectional view of a processing chamber according to one or more embodiments of the present disclosure. [Figure 2A] 2 is a schematic top isometric view of a first embodiment of a flow block in a first embodiment of the processing chamber of FIGS. 1A-1C. FIG. [Figure 2B] FIG. 2B is a bottom isometric view of a substrate support chassis suitable for use with the flow block of FIG. 2A. [Figure 2C] 2C is a first schematic platform layout of a first embodiment of the processing chamber of FIGS. 2A and 2B. [Figure 2D] 2C is a second schematic platform layout of the first embodiment of the processing chamber of FIGS. 2A and 2B. [Figure 3A] FIG. 4 is a schematic top plan view of a second embodiment of a flow block of the processing chamber of FIGS. 1A-1C. [Figure 3B] FIG. 3B is a top plan view of a substrate support chassis suitable for use with the flow block of FIG. 3A. [Figure 3C] 4 is a schematic layout of a processing platform having a processing chamber configured according to FIGS. 3A and 3B. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010]

[0019] To facilitate understanding, wherever possible, the same reference numbers have been used to designate identical elements common to the drawings. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0011]

[0020] It should be noted, however, that the attached drawings depict only exemplary embodiments of the present disclosure and therefore should not be considered as limiting the scope of the present disclosure, which may also admit of other equally effective embodiments.

[0012]

[0021] A processing chamber is provided for patterning features having desired small dimensions in film stacks, substrates, and for fabricating nanostructures, the processing chamber including a symmetric pumping system that helps maintain symmetric electrical, thermal, and gas flow conductances within the processing chamber.

[0013]

[0022] In one embodiment, the chamber is configured with two symmetrical exhaust channels centered about a central axis of a substrate support disposed within the chamber. The two exhaust channels are 180 degrees apart and aligned with the slit valve door. The conductance of the two exhaust channels increases the fluid removal area by approximately 18% compared to a standard three pump ports. To facilitate connection to the substrate support, bias matching and supply connections for manipulating the substrate support are located on the front outside opposite the opening of the slit valve door.

[0014]

[0023] In an alternative embodiment, the chamber is constructed with two symmetrical exhaust channels as above, but the bias match and supply connections are located on the outside of one adjacent the slit valve door. The opening on the opposite side is available for an additional connection to the substrate support. The location of the bias match location provides the advantage of a reduced footprint over the prior art for the platform on which the chamber is mounted.

[0015]

[0024] In another embodiment, the chamber is configured with four symmetrical exhaust channels centered on the central axis of the substrate support disposed inside the chamber. The four exhaust channels are spaced 90 degrees apart and aligned with the slit valve door. The conductance of the four exhaust channels reduces the fluid removal area compared to the standard three pump ports. However, a fully symmetrical flow chamber with four atmospheric openings to the substrate support provides room for pre-design and connection of RF, AC, DC, cooling hoses, He lines, optical fibers, cryogenic lines, additional sensors, and other utilities. In particular, a fully symmetrical flow chamber with four atmospheric openings allows for the integration of a cryogenic substrate support with processing temperatures below 0 degrees Celsius and has unique connections that exceed the space available in a conventional three-port design.

[0016]

[0025] 1A is a schematic cross-sectional view of a processing chamber 100 according to one or more embodiments of the present disclosure. The exemplary processing chamber 100 is suitable for patterning a layer of material disposed on a substrate 116 within the processing chamber 100. The exemplary processing chamber 100 is suitable for performing a patterning process. The processing chamber 100 may be a plasma etch chamber, a plasma enhanced chemical vapor deposition chamber, a physical vapor deposition chamber, a plasma processing chamber, an ion implantation chamber, or other suitable vacuum processing chamber.

[0017]

[0026] The processing chamber 100 includes a body 140. The body 140 generally has four exterior surfaces. The body 140 includes a source block 102, a process block 104, a flow block 106, and an exhaust block 108. It should be understood that the blocks may be a combination of one or more blocks. For example, the exhaust block 108 is integrated with and is part of the flow block 106, resulting in a single integrated body 109 (as shown in FIG. 1C). The flow block 106 is part of a pumping port assembly 111 that includes a substrate support chassis 154. The source block 102, the process block 104, and the flow block 106 collectively enclose a process region 112. During operation, a substrate 116 may be positioned on the substrate support assembly 118 and exposed to a process environment, such as a plasma, generated in the process region 112. Exemplary processes that may be performed in the processing chamber 100 may include etching, chemical vapor deposition, physical vapor deposition, implantation, plasma annealing, plasma treatment, plasma removal, or other plasma processes. A vacuum may be maintained in the process region 112 by drawing air from exhaust ports 181 formed in the exhaust block 108 through one or more exhaust channels defined in the flow block 106, i.e., exhaust channels 114.

[0018]

[0027] The process region 112 and exhaust channel 114 are substantially symmetric about a central axis 110 to provide symmetric electrical current, gas flow, heat and pressure uniformity to establish uniform process conditions.

[0019]

[0028] The source block 102 includes an upper electrode 120 (or anode) isolated from and supported by the process block 104 by an isolator 122. The upper electrode 120 may include a showerhead plate 128 attached to a heat transfer plate 130. The upper electrode 120 may be connected to a gas source 132 through a gas inlet tube 126.

[0020]

[0029] The gas source 132 may include one or more process gas sources and may further include inert, non-reactive, and reactive gases as required. Examples of process gases that may be provided by the gas source 132 include, but are not limited to, hydrocarbon-containing gases including methane (CH4), sulfur hexafluoride (SF6), silicon chloride (SiCl4), carbon tetrafluoride (CF4), hydrogen bromide (HBr), hydrocarbon-containing gases, argon gas (Ar), chlorine (Cl2), nitrogen (N2), helium (He), and oxygen gas (O2). Additionally, the process gases may include nitrogen, chlorine, fluorine, oxygen, and hydrogen-containing gases, such as BCl3, C2F4, C4F8, C4F6, CHF3, CH2F2, CH3F, NF3, NH3, CO2, SO2, CO, N2, NO2, N2O, and H2, among others.

[0021]

[0030] The showerhead plate 128, the heat transfer plate 130, and the gas inlet tube 126 may all be made from radio frequency (RF) conductive materials such as aluminum or stainless steel. The upper electrode 120 may be coupled to an RF power source 124 via a conductive gas inlet tube 126. The conductive gas inlet tube 126 may be coaxial with the central axis 110 of the processing chamber 100 such that both RF power and process gas from a gas source 132 are supplied symmetrically.

[0022]

[0031] The process block 104 is placed on the flow block 106. A grounded RF gasket and O-ring seal is placed between the process block 104 and the flow block 106. Alternatively, the process block 104 and the flow block 106 are combined and made into a single integrated body 107 (as shown in FIG. 1B) without a grounded RF gasket and O-ring seal between them.

[0023]

[0032] The process block 104 surrounds the process region 112. The process block 104 may be made of a conductive material that is resistant to the processing environment, such as aluminum or stainless steel. A substrate support assembly 118 may be centrally located within the process block 104 and positioned to support a substrate 116 in the process region 112 symmetrically about a central axis 110.

[0024]

[0033] A slit valve opening 142 may be formed through the process block 104 to allow passage of the substrate 116. A slit valve 144 may be disposed outside the process block 104 to selectively open and close the slit valve opening 142.

[0025]

[0034] The process block 104 is disposed on a flow block 106. The flow block 106 provides a fluid path between a process region 112 defined within the process block 104 and an exhaust block 108. The flow block 106 also provides an interface between a substrate support assembly 118 and the atmospheric environment outside the processing chamber 100.

[0026]

[0035] The flow block 106 has through holes 170 and exhaust channels 114. The through holes 170 are maintained at atmospheric pressure and provide access to the substrate support assembly 118. The exhaust channels 114 are maintained at vacuum and provide a fluid path for removing gases from the process region 112 to the exterior of the processing chamber 100.

[0027]

[0036] 2A provides an additional view that may be helpful in understanding the following description of the flow block 106 / 206. The flow block 106 includes an outer wall 160, an inner wall 162, two or more pairs of radial walls 164 connecting between the inner wall 162 and the outer wall 160, and a bottom wall 166 attached to the inner wall 162 and the two or more pairs of radial walls 164. The outer wall 160 is equidistant from the central axis 110. The outer wall 160 may include two or more through holes 170 formed between each pair of radial walls 164. The through holes 170 connect the atmospheric region 168 defined by the inner wall 162 with the outside environment, and thus accommodate utility connections such as electrical connections, gas connections, cooling fluid connections, sensor leads, and the like.

[0028]

[0037] A chassis 154, shown in FIG. 2B and not shown in FIG. 2A for clarity herein, may be sealingly disposed on the inner wall 162 and two or more pairs of radial walls 164. The chassis 154 may include a central opening 158 for receiving the substrate support assembly 118. The chassis 154 and the central opening 158 are centered about the central axis 110. The inner wall 162, the bottom wall 166, the radial walls 164, and the chassis 154 divide the area inside the outer wall 160 into an exhaust channel 114 and an atmospheric area 168. The exhaust channel 114 connects with the process area 112 of the process block 104. The two or more pairs of radial walls 164 are disposed between the inner wall 162 and the outer wall 160 and divide the space into the exhaust channel 114 and the through hole 170. In one embodiment, the two or more pairs of radial walls 164 are disposed such that the exhaust channel 114 is symmetrical about the central axis 110.

[0029]

[0038] The substrate support assembly 118 is supported by the chassis 154. The substrate support assembly 118 is positioned along the central axis 110 to position the substrate 116 symmetrically about the central axis 110. The substrate support assembly 118 includes a support plate 174 and a base plate 176 disposed in the process region 112. The substrate support assembly 118 is disposed over a central opening 158 of the chassis 154. In one embodiment, the substrate support assembly 118 is fixed to the chassis 154 and does not move. In another embodiment, the substrate support assembly 118 has a hollow shaft 178. A bellows 184 may be connected between the base plate 176 and the chassis 154 and surround the hollow shaft 178. The bellows 184 allows the substrate support assembly 118 to move vertically along the central axis 110 and provides a vacuum seal between the atmospheric region 168 in the flow block 106 and the vacuum of the process region 112 of the process block 104.

[0030]

[0039] The support plate 174 may be an electrostatic chuck having a chucking electrode 186. The support plate 174 may also include one or more heating elements 188 for heating the substrate 116 during processing. The base plate 176 may include cooling channels 190 formed therein. The chucking electrode 186 may be connected to a bias power supply 187 through one of the base plate 176, the atmospheric region 168, and the through-holes 170. The heating element 188 may be connected to a heating power supply 189 through one of the base plate 176, the atmospheric region 168, and the through-holes 170. The cooling channels 190 may be connected to a cooling fluid source 191 through one of the base plate 176, the atmospheric region 168, and the through-holes 170.

[0031]

[0040] During operation, one or more process gases from a gas source 132 may enter the process region 112 through the showerhead plate 128. RF power may be applied between the upper electrode 120 and the substrate support assembly 118 to ignite and maintain the one or more process gases in the process region 112. A substrate 116 disposed on the substrate support assembly 118 is processed by the plasma. One or more process gases may be continuously supplied to the process region 112, and a vacuum pump 182 operates through a symmetric flow valve 180 and a flow block 106 to generate a symmetric and uniform gas flow over the substrate 116.

[0032]

[0041] The exhaust block 108 includes a symmetric flow valve 180 and a vacuum pump 182 attached to the symmetric flow valve 180. The symmetric flow valve 180 connects to the exhaust channel 114 through an exhaust port formed in the bottom of the exhaust block 108 to provide symmetric and uniform flow to the processing chamber 100. In one embodiment, the exhaust block 108 is part of the flow block 106.

[0033]

[0042] The controller 155 can provide operating instructions to the processing chamber 100. The controller 155 can include support circuits 165, a central processing unit (CPU) 175, and a memory 185. The CPU 175 can execute instructions stored in the memory 185 to control process sequences and regulate gas flows from the gas source 132 into the processing chamber 100 and other process parameters. Software routines can be stored in the memory 185. The software routines are executed by the CPU 175. Execution of the software routines by the CPU 175 controls the processing chamber 100 such that processes are performed according to the present disclosure. For example, the software routines can control the operation of the substrate support assembly 118 and the vacuum pump 182.

[0034]

[0043] 2A and 2B are used to describe a first embodiment of a pumping port assembly 111 having two symmetrical exhaust channels 114. FIG. 2A is a schematic top isometric view of a first embodiment of a flow block 106 in a first embodiment of a processing chamber 100 of FIG. 1A. The flow block 206 is one specific example of the flow block 106 described above with respect to FIG. 1A. However, it should be understood that the features of the flow block 106 are applicable to the single integrated body 107 / 109 version shown in FIG. 1B and FIG. 1C. The outer wall 160 of the flow block 206 may include a flange 236 at an upper end that is used to connect the flow block 206 to the process block 104. The outer wall 160 of the flow block 206 may include a second flange 202 at a lower end that is used to connect the flow block 206 to the exhaust block 108. However, it should be understood that in some embodiments, the flow block 206 may be integrated into or part of the exhaust block 108.

[0035]

[0044] The flow block 206 has at least two regions, the exhaust channel 114 and a central portion 266, configured to be fluidly isolated from one another such that one region may be maintained at vacuum pressure while the other region may be maintained at atmospheric pressure. The radial wall 164 extends from the inner wall 162 of the flow block 206 and fluidly separates the exhaust channel 114 from the central portion 266 of the flow block 106. The central portion 266 is bounded by the bottom wall 166 and the radial wall 164 and is fluidly isolated to form an atmospheric region 168 in the central portion 266 of the flow block 206.

[0036]

[0045] The flow block 206 has a symmetrical shape and has two exhaust channels 114 of equal size. The flow block 206 extends along the inner wall 162 to near the through holes 170 and back along the radial wall 164. In one embodiment, the exhaust channels 114 of the flow block 206 form a first vacuum port 241 and a second vacuum port 242. The first vacuum port 241 and the second vacuum port 242 are symmetric about the central axis 110 of the processing chamber 100. The conductance area of ​​the processing chamber 100 for fluid flow through the first vacuum port 241 and the second vacuum port 242 is approximately 200 in 2 From about 220in 2 , for example, about 212in 2 The first vacuum port 241 and the second vacuum port 242 are spaced approximately 180 inches apart from the three vacuum ports of a conventional design. 2 Compared to the previous example, this increases the conductance area by approximately 18%.

[0037]

[0046] The through holes 170 form openings extending from the outer wall 160 to the inner wall 162. The through holes 170 connect the atmospheric region 168 defined by the inner wall 162 with the outside environment and thus accommodate utility connections such as electrical connections, gas connections, cooling fluid connections, etc. Each through hole 170 in the flow block 106 separates a respective exhaust channel 114. Thus, there are an equal number of through holes 170 and exhaust channels 114. The flow block 206 has two openings, a first opening 271 and a second opening 272, extending from the outer wall 160 to the inner wall 162. The first and second openings 271, 272 fluidly couple the central portion 266 to the environment outside the flow block 206. The first and second openings 271, 272 are linearly aligned through the central axis 110. The first and second openings 271, 272 are 180 degrees opposite each other on the inner wall 162 of the flow block 206. In this manner, the flow block 206 is symmetrical.

[0038]

[0047] The top surface 264 extends across the entire top of the radial wall 164. The top surface 264 further extends across the top wall 212 of the one or more openings. The top wall 212 of the openings extends over the tops of the first and second openings 271, 272. The top surface 264 forms a continuous flat ring shape. One or more alignment holes 210 may be formed in the top surface 264 along the top wall 212 of the openings for alignment with the chassis 154.

[0039]

[0048] A gasket 265 may be disposed along the top surface 264. The gasket 265 forms a fluid seal between the chassis 154 (254 in FIG. 2B) and the top surface 264. In this manner, an atmospheric region 168 is formed in the central portion 266 that is fluidly isolated from the vacuum pressure in the exhaust channel 114. The chassis 254 provides an interface between the flow block 206 and the substrate support assembly 118. FIG. 2B is a bottom isometric view of the chassis 254 suitable for use with the flow block 106 of FIG. 2A. The chassis 254 is one implementation of the chassis 154 shown in FIG. 1A.

[0040]

[0049] The chassis 254 can include a disk-shaped body 252 having outwardly extending wings 263. The disk-shaped body 252 has a perimeter 232, a bottom surface 253, and a top surface 251. The disk-shaped body 252 has a lip 233. The lip 233 is sized to contact a gasket 265. The gasket 265 further contacts the wings 263. In one embodiment, the lip 233 is planar with the wings 263. However, it should be understood that the lip 233 and its wings 263, while forming a seal between the top surface 264 of the flow block 206 and the gasket 265, do not have to be planar.

[0041]

[0050] The vanes 263 extend from the outer periphery 232 of the disk-shaped body 252. The number of vanes 263 corresponds to the number of through holes 170 in the flow block 206. In one embodiment, the chassis 254 has two vanes 263 positioned 180 degrees apart. The chassis 254 has a first vane 261 corresponding to the first opening 271 and a second vane 262 corresponding to the second opening 272. The vanes 263 have one or more features 218. The features 218 may be aligned with or fixed to the alignment holes 210 in the flow block 206. The features 218 may be pins, holes, or through holes that aid in locating and fixing the chassis 254 to the flow block 206.

[0042]

[0051] In one embodiment, the base plate 176 of the substrate support assembly is sealingly disposed on the chassis 254. The central opening 158 of the chassis 254 may have a sealing flange 293. In another embodiment, the hollow shaft 178 of the substrate support assembly 118 extends through the central opening 158 of the chassis 254. A bellows 184 is coupled to the sealing flange 293. The bellows 184 is provided between the substrate support assembly 118 and the chassis 254 to prevent fluids, such as gases, from migrating through the central opening 158 from the bottom surface 253 of the chassis 254 to the top surface 251, the exhaust channel 114, or the interior region 112 of the processing chamber 100.

[0043]

[0052] The substrate support assembly 118 has multiple connections that extend through the central opening 158 into the central portion 266 of the flow block 206 and exit through first and second openings 271, 272. The connections provide, among other connections, electrical, gas, cooling fluid, etc., between the external environment and the substrate support assembly 118. The larger the first and second openings 271, 272, the more connections can be accommodated through the openings. However, there is a limit to how large the openings 170 can be. Making one larger can cause an asymmetry in the chamber exhaust through the exhaust channel 114. Making both larger reduces the conductance through the exhaust channel 114, increasing back pressure and power consumption. The requirement for larger openings is addressed for the embodiment shown in Figures 3A-3B below. Access to one or more openings facilitates connection of the processing chamber to the processing platform 200A.

[0044]

[0053] FIG. 2C is a first schematic platform layout of a first embodiment of a processing platform 200A having at least one processing chamber 100 of FIGS. 2A and 2B. The processing platform 200A has a transfer chamber 290 having a transfer robot 291 disposed therein for transferring substrates. The transfer chamber 290 is maintained at vacuum pressure and is coupled to one or more processing chambers, such as the one or more processing chambers 100, which are also at vacuum pressure. The transfer chamber 290 is coupled to a factory interface 295 by a load lock chamber 294. The factory interface 295 is maintained at substantially atmospheric pressure. The load lock chamber 294 allows the substrate to be transferred from the vacuum environment of the transfer chamber 290 to the atmospheric pressure of the factory interface 295.

[0045]

[0054] A slit valve door 144 may be disposed between each processing chamber 100 and the transfer chamber 290. When the slit valve door 144 is opened, the transfer robot 291 transfers the substrate through the slit valve opening 142 onto the substrate support assembly 118 of the processing chamber 100 for processing the substrate with RF excited plasma. The bias matching circuit 291 provides an electrical connection between the substrate support assembly 118 and an RF power source (not shown). The bias matching circuit 291 prevents damage to the power source by RF reflected from the plasma load. The bias matching circuit 291 may be disposed on an exterior surface of the processing chamber 100 opposite the exterior surface coupled to the transfer chamber 290.

[0046]

[0055] The two openings 170 are 180 degrees apart and are aligned with the slit valve openings 142. The bias matching circuit 291 and supply connections are on the opposite side from the slit valve door 144 to facilitate cathode connection to the substrate support assembly 118 through the through hole 170. The location of the bias matching circuit 291 on the processing chamber 100 may allow easy access to the chamber wiring and plumbing.

[0047]

[0056] FIG. 2D is a second schematic platform layout of the first embodiment of the flow block 206 of FIG. 2A and FIG. 2B. The processing platform 200B is similar to the processing platform 200A. However, the two exhaust channels 114 are aligned with the slit valve opening 142. This allows the bias matching circuit 291 and the supply connection to be located on one side of the processing chamber 100 relative to the transfer chamber, with the other side open to facilitate the cathode connection. That is, the bias matching circuit 291 is located adjacent to the outer surface of the processing chamber 100. This has the advantage of reducing the footprint ('X' 299 × 'Y' 298) of the processing platform 200B compared to the processing platform 200A.

[0048]

[0057] Symmetrical conductance for removing process gases from within the processing chamber 100 improves process uniformity when processing substrates. Higher conductance reduces the amount of process material that can deposit in the chamber and cause defects in subsequent substrates being processed in the chamber. However, the area allocated to the exhaust channels 114 of the flow block 206 sacrifices the area available for the through holes 170 that the substrate support assembly 118 utilizes for both electrical and fluid / plumbing connections. In a high temperature substrate support assembly 118, the majority of connections are electrical. However, in a cryogenic substrate support assembly 118, the number of fluid connections increases, which increases the area required to route all electrical and fluid / plumbing connections within the through holes 170 to operate the substrate support assembly 118. Increasing the size of the openings for connections alone is not sufficient, because increasing the size of the openings increases the spacing between the exhaust channels while decreasing the size of the exhaust channels. Thus, increasing the size of the openings can result in asymmetrical removal of fluid flow from the chamber, which can result in non-uniform processing on the substrate. In one embodiment, the cryogenic operation of the substrate support assembly 118 has electrical and plumbing connections in excess of the area provided by a conventional three exhaust channel flow block.

[0049]

[0058] 3A and 3B are used to describe a second embodiment of a pumping port assembly 111 having four symmetrical exhaust channels. FIG. 3A is a schematic top plan view of a second embodiment of a flow block 306 that can be used in the processing chamber of FIG. 1A. However, it should be understood that the features of the flow block 306 are applicable to the single integrated body 107 / 109 version shown in FIG. 1B and FIG. 1C. The flow block 306 is substantially similar in many respects to the flow block 206 and the other embodiments of the flow block 106 described above with respect to FIG. 1A. The outer wall 160 of the flow block 106 may include a flange 236 for connecting with the process block 104. The outer wall 160 of the flow block 106 may include a second flange 202 for connecting with the exhaust block 108. However, it should be understood that in some embodiments, the flow block 306 may be integrated with or be part of the exhaust block 108.

[0050]

[0059] Similar to flow block 206, flow block 306 has at least two regions, exhaust channels 114 and a central portion 266, configured to be fluidly isolated from one another such that one region may be maintained at vacuum pressure while the other region may be maintained at atmospheric pressure. Radial walls 164 extend from an inner wall 162 of flow block 306 and fluidly separate exhaust channels 114 from central portion 266 of flow block 306. Central portion 266 is bounded by bottom wall 166 and radial walls 164 and is fluidly isolated to form an atmospheric region 168 in central portion 266 of flow block 306.

[0051]

[0060] The flow block 306 has a symmetrical shape and has four equal sized exhaust channels 114. The flow block 306 extends along the inner wall 162 to near the through holes 170 and back along the radial wall 164. In one embodiment, the exhaust channels 114 of the flow block 306 form a first vacuum port 341, a second vacuum port 342, a third vacuum port 343, and a fourth vacuum port 344. The first, second, third and fourth vacuum ports 341, 342, 343, 344 are symmetrical about the central axis 110 of the processing chamber 100. The conductance area of ​​the processing chamber 100 for fluid flow through the first, second, third and fourth vacuum ports 341, 342, 343, 344 is slightly reduced over a conventional three port design while maintaining symmetrical fluid flow around the substrate support assembly 118.

[0052]

[0061] As described above with respect to flow block 206 and flow block 306, the through holes form openings in flow blocks 206 and 306 that extend from the outer wall 160 to the inner wall 162. The through holes 170 connect the atmospheric region 168 defined by the inner wall 162 with the outside environment and thus accommodate utility connections such as electrical connections, gas connections, cooling fluid connections, etc. Each through hole 170 in the flow block 106 separates a respective exhaust channel 114. Thus, there are an equal number of through holes 170 and exhaust channels 114. The flow block 306 has four openings that extend from the outer wall 160 to the inner wall 162: a first opening 371, a second opening 372, a third opening 373, and a fourth opening 374. The first, second, third and fourth openings 371, 372, 373, 374 fluidly couple the central portion 266 with the environment external to the flow block 306. The first and third openings 371, 373 are linearly aligned through the central axis 110. Similarly, the second and fourth openings 372, 374 are linearly aligned through the central axis 110. The first opening 371 and the third opening 373 are each oriented approximately 90 degrees from the second opening 372 and the fourth opening 374, respectively, on the inner wall 162 of the flow block 306. In this manner, the flow block 306 is symmetrical.

[0053]

[0062] The area provided by the first, second, third, and fourth openings 371, 372, 373, and 374 in the flow block 306 increases the area provided for connection to the substrate support assembly 118 by approximately 33% over a conventional three through hole design for a flow block, while maintaining symmetrical fluid flow around the substrate support assembly 118 through the exhaust channels.

[0054]

[0063] The upper surface 364 extends across the entire top of the radial wall 164. The upper surface 364 further extends across the upper wall 312 of one or more openings. The upper wall 312 of the openings extends across the entire top of the first, second, third and fourth openings 371, 372, 373, 374. The upper surface 364 forms a continuous flat ring shape. In one embodiment, the flat ring shape has four lips extending from four radially aligned arc portions.

[0055]

[0064] A gasket 365 may be disposed along the top surface 364. The gasket 365 forms a fluidic seal between the chassis 354 (shown in FIG. 3B ) and the top surface 364. In this manner, the central portion 266 forms an atmospheric region 168 that is fluidly isolated from the vacuum pressure in the exhaust channels 114 of the flow block 306, as in the flow block 206. The chassis 354 provides an interface between the flow block 306 and the substrate support assembly 118.

[0056]

[0065] Figure 3B is a top plan view of a substrate support chassis 354 suitable for use with flow block 306 of Figure 3A. Chassis 354 is substantially similar in many respects to chassis 254, but is an alternative embodiment of chassis 154 shown in Figure 1A.

[0057]

[0066] The chassis 354 includes a disk-shaped body 352 having outwardly extending vanes 363. The disk-shaped body 352 has a perimeter 332, a bottom surface 353, and a top surface 351. The perimeter 332 is generally circular and is terminated at each vane 363. The disk-shaped body 352 is sized to contact a gasket 365. The gasket 365 further contacts the vanes 363. In one embodiment, the gasket 365 is coplanar at the contact of the disk-shaped body 352 and the vanes 363. However, it should be understood that the gasket need not be planar while forming a seal between the top surface 364 of the flow block 306 and the chassis 354.

[0058]

[0067] The vanes 363 extend from the outer periphery 332 of the disk-shaped body 352. The number of vanes 363 corresponds to the number of through holes 170 in the flow block 306. In one embodiment, the chassis 354 has four vanes 363 positioned 90 degrees apart. The chassis 354 has a first vane 381 corresponding to the first opening 371, a second vane 382 corresponding to the second opening 372, a third vane 383 corresponding to the third opening 373, and a fourth vane 384 corresponding to the fourth opening 374. The vanes 363 have one or more features similar to those described with respect to the chassis 254, with the features 218 aligned or secured to alignment holes in the flow block 306.

[0059]

[0068] The substrate support assembly 118 has multiple connections that extend through the central opening 158 into the central portion 266 of the flow block 306 and exit through first, second, third and fourth openings 371, 372, 373, 374. The connections are electrical, gas, cooling fluid, etc., connections between the external environment and the substrate support assembly 118, among other connections. The greater number of openings, i.e., first, second, third and fourth openings 371, 372, 373, 374, accommodates more connections of the substrate support assembly 118. In one embodiment, the substrate support assembly 118 is configured for cryogenic processing and has more fluid connections than a high temperature substrate support assembly. Access to the four openings facilitates connections of the substrate support assembly 118 within the processing chamber 100 and to the processing platform 300A of the processing chamber 100.

[0060]

[0069] The conductance area of ​​the flow block 306 is slightly reduced compared to the conventional three-port pump port design. However, the flow block 306 advantageously provides fully symmetrical flow with cathode facilitation, i.e., four atmospheric thru-holes 170 that provide additional space for future cathode advanced designs with RF, AC, DC, cooling hoses, helium lines, fiber optics, cryogenic lines, additional sensors, and other potential features that cannot be accommodated in the current conventional design of the flow block.

[0061]

[0070] Figure 3C is a schematic layout of a processing platform 300A having a processing chamber 100 configured according to Figures 3A and 3B. The processing platform 300A is substantially similar to the processing platform 200A having a transfer chamber 290 having a transfer robot 291. The transfer chamber 290 is at vacuum pressure and is coupled to one or more processing chambers, such as the processing chamber 100. The processing chamber 100 is at vacuum pressure. The transfer chamber 290 is coupled to a factory interface 295 by a load lock chamber 294. The factory interface 295 is at atmospheric pressure.

[0062]

[0071] A slit valve door 144 is disposed between the transfer chamber 290 and the processing chamber 100. A transfer robot 291 moves a substrate through the slit valve door 144 onto the substrate support assembly 118 of the processing chamber 100 for processing the substrate with an RF excited plasma. A bias matching circuit 291 provides an electrical connection to the substrate support assembly 118 while preventing damage to components outside the chamber due to RF coupling.

[0063]

[0072] The through-holes 170 are spaced 90 degrees apart, with one through-hole 170 aligned with the slit valve door 144. A bias matching circuit 291 and supply connections are on the opposite side of the slit valve door 144 to facilitate cathode connection to the substrate support assembly 118 through the through-holes 170. The configuration of the bias matching 291 on the processing chamber 100 may allow easy access to the chamber wiring. The cryogenic substrate support assembly 118 has a through-hole 170 adjacent the bias matching circuit 291 available for use with additional plumbing of the cryogenic substrate support assembly 118.

[0064]

[0073] Alternatively, the bias matching circuit 291 is provided on one side of the processing chamber 100 adjacent to the slit valve door 144. The opposite adjacent side of the slit valve door and the opposite side to the bias matching circuit 291 are open to facilitate cathode connection. This has the advantage of reducing the footprint ('X' 299 x 'Y' 298) of the processing platform 300A. In yet another alternative, the flow block 306 of the processing chamber 100 is at 45 degrees to that shown in FIG. 3C. The exhaust channel 114 is aligned with the slit valve door 144. In this arrangement, access is gained to all four of the through holes 170, and the bias matching 291 can be positioned to facilitate enhanced access to the through holes 170 while further reducing the footprint of the processing platform 300A.

[0065]

[0074] Advantageously, the flow block disclosed above provides symmetric chamber electrical, thermal, and gas flow conductance. The flow block provides access to the process region for by-product removal with symmetric exhaust channels centered about the central axis of the substrate support, while allowing additional space for cryogenic and other advancements in the substrate support assembly that require additional connections for RF, AC, DC, cooling hoses, helium or other gas lines, optical fibers, cryogenic lines, sensors, and other potential features.

[0066]

[0075] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, as determined by the following claims.

Claims

1. A flow module, comprising: A plurality of outer walls equidistant from a central axis; The inner wall and two or more pairs of radial walls connecting the outer wall and the inner wall, the outer wall, the inner wall, and the two or more pairs of radial walls defining an exhaust channel and a central portion, the central portion and the exhaust channel being fluidly isolated from one another by the inner wall and the radial walls; through holes formed through the outer wall and fluidly coupled to the central portion, the through holes including a first through hole, a second through hole, a third through hole, and a fourth through hole, the first through hole and the second through hole being spaced 180 degrees apart and linearly aligned through the central axis, and the third through hole and the fourth through hole being spaced 180 degrees apart and linearly aligned through the central axis; A flow module comprising: A flow module having four exhaust channels, said exhaust channels being symmetrical.

2. 10. The flow module of claim 1, wherein the first through-hole is oriented 180 degrees from the second through-hole.

3. 2. The flow module of claim 1, wherein the first through hole and the second through hole are each oriented 90 degrees from the third through hole and the fourth through hole, respectively, in an inner wall of the flow block.

4. 1. A processing chamber for processing a substrate, comprising: a process module enclosing a process region; a central axis disposed vertically through a center of the processing chamber; A flow module, comprising: a plurality of outer walls equidistant from the central axis; The inner wall and two or more pairs of radial walls connecting the outer wall and the inner wall, the outer wall, the inner wall, and the two or more pairs of radial walls defining an exhaust channel and a central portion, the central portion and the exhaust channel being fluidly isolated from one another by the inner wall and the radial walls; through holes formed through the outer wall and fluidly coupled to the central portion, the through holes including a first through hole, a second through hole, a third through hole, and a fourth through hole, the first through hole and the second through hole being spaced 180 degrees apart and linearly aligned through the central axis, and the third through hole and the fourth through hole being spaced 180 degrees apart and linearly aligned through the central axis; a flow module having four exhaust channels, the exhaust channels being symmetric; a substrate support chassis sealingly coupled to the inner wall of the flow module; a substrate support assembly including a support plate and a base, the support plate being positioned in the process region to support a substrate therein, the base being accessible through a through hole; A processing chamber comprising:

5. The processing chamber of claim 4 , wherein the first through-hole is oriented 180 degrees from the second through-hole.

6. 5. The processing chamber of claim 4, wherein the first through hole and the second through hole are each oriented 90 degrees from the third through hole and the fourth through hole, respectively, in the inner wall of the flow module.

7. 1. A processing platform comprising: a transfer chamber having a transfer chamber robot; a load lock chamber coupled to the transfer chamber and a factory interface; a plurality of processing chambers formed with four exterior surfaces and coupled to the transfer chamber at a slit valve door in a first of the four exterior surfaces, at least one of the processing chambers comprising: a process module enclosing a process region; a central axis disposed vertically through a center of the processing chamber; A flow module, comprising: an outer wall equidistant from the central axis; The inner wall and two or more pairs of radial walls connected between the outer wall and the inner wall, the outer wall, the inner wall, and the two or more pairs of radial walls defining an exhaust channel and a central portion, the central portion and the exhaust channel being fluidly isolated from one another within the flow module; two or more through holes formed through the exterior wall and fluidly coupled to the central portion, at least two of the two or more through holes being 180 degrees apart and linearly aligned through the central axis; a flow module including: a substrate support chassis sealingly coupled to the inner wall of the flow module; a substrate support assembly including a support plate and a base, the support plate being disposed in the process region to support a substrate therein, the base being accessible through the two or more through holes; a matching circuit electrically coupled to the substrate support assembly, the matching circuit being mounted on one of the four exterior surfaces of the processing chamber and mounted in one of the two or more through holes; A plurality of processing chambers, A processing platform comprising:

8. The processing platform of claim 7 , wherein said flow module has two exhaust channels, said exhaust channels being symmetrical.

9. The processing platform of claim 7 , wherein a first one of the two or more through holes is oriented 180 degrees from a second one of the two or more through holes.

10. 10. The processing platform of claim 9, wherein the matching circuit is on a second exterior surface opposite the first exterior surface having a slit valve.

11. 10. The processing platform of claim 9, wherein the matching circuit is on a third exterior surface adjacent the first exterior surface having a slit valve.

12. a third through hole of the two or more through holes formed through the outer wall and fluidly coupled to the central portion; 8. The processing platform of claim 7, further comprising: a fourth through hole of the two or more through holes formed through the outer wall and fluidly coupled to the central portion, the third through hole and the fourth through hole being 180 degrees apart and linearly aligned through the central axis.

13. 13. The processing platform of claim 12, wherein the first and second through holes are each oriented 90 degrees from the third and fourth through holes, respectively, in the inner wall of the flow block.

14. The processing platform of claim 12 , wherein said flow module has four exhaust channels, said exhaust channels being symmetrical.

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