Semiconductor device and resin structure

Abstract

To provide a semiconductor device enabling the productivity and reliability thereof to be improved.SOLUTION: A semiconductor device 11a is equipped with substrates 17a and 17b, and a resinous structure 20a. The resinous structure 20a includes a plurality of flat plate portions 31a, 31b, 31c, and 31d. The flat plate portions 31a, 31b, 31c, and 31d include weld portions 44a, 44b, 44c, and 44d, respectively. At least one of the weld portions 44a, 44b, 44c, and 44d is present within a range of 180 degrees on the inner side than normal lines 38a, 38b, 38c, and 38d. The normal lines 38a, 38b, 38c, and 38d are the normal lines 38a, 38b, 38c, and 38d of straight lines 36a and 36b connecting a gravity center 37a of a diagram 35a formed by connecting a plurality of through-hole centers 34a, 34b, 34c, and 34d, and the through-hole centers 34a, 34b, 34c, and 34d. The normal lines 38a and 38b, 38c, and 38d pass through the through-hole centers 34a, 34b, 34c, and 34d.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device and a resin structure. [Background technology]

[0002] A resin molded product having an attachment hole into which a cylindrical collar is fitted has been disclosed (see, for example, Patent Document 1). According to Patent Document 1, a weld portion formed on the periphery of the attachment hole by the joining of resins during molding is provided in a corresponding region of the periphery where the contact protrusion is formed. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2019-15382 A Summary of the Invention [Problem to be solved by the invention]

[0004] The semiconductor device may be provided with a resin structure having a through hole for mounting. The semiconductor device is fastened and fixed at a predetermined location by a bolt using the through hole provided in the resin structure. According to the resin molded body disclosed in Patent Document 1, a weld is provided in a corresponding area where the contact protrusion is formed, and the collar and the molded body are in contact with each other in this corresponding area.

[0005] However, in such a configuration, the through hole has an area that contacts the collar and an area that does not contact the collar. The non-contact area reduces the contact area, and the surface pressure in the contact area increases. As a result, the weld portion provided in the contact area is subjected to a large stress compared to when the entire collar is subjected to stress, and as a result, there is a risk of breakage. In addition, since the contact area is reduced, the strength of the through hole in the penetration direction is reduced, and when the bolt is fastened or stress is applied in the penetration direction, the collar fitted in the through hole may be displaced. In such a state, the attachment of the semiconductor device becomes insufficient, leading to a decrease in reliability. Furthermore, it is difficult to manufacture such a resin molded body with a complex shape by injection molding, and productivity is reduced.

[0006] Therefore, it is an object of the present invention to provide a semiconductor device that can improve productivity and reliability. [Means for solving the problem]

[0007] A semiconductor device according to the present disclosure includes a substrate, a resin structure surrounding the substrate, and a semiconductor chip mounted on the substrate. The resin structure is plate-shaped and includes a plurality of flat plate portions each having a through hole penetrating in the thickness direction. Each flat plate portion includes a weld portion having a portion disposed within a length equivalent to the thickness of the flat plate portion from a side wall surface of the through hole. When viewed in the thickness direction of the substrate, at least one of the weld portions is within a range of 180 degrees inward from the normal line. The normal line is a normal line of a straight line connecting the center of gravity of a figure formed by connecting the centers of the plurality of through holes to the center of the through hole, and the normal line passes through the center of the through hole. Effect of the Invention

[0008] According to the semiconductor device, the productivity and reliability can be improved. [Brief description of the drawings]

[0009] [Figure 1]FIG. 1 is a schematic perspective view of a semiconductor device according to a first embodiment. [Diagram 2] FIG. 2 is a schematic plan view of the semiconductor device shown in FIG. 1 as viewed in the thickness direction of the base plate. [Diagram 3] FIG. 3 is an enlarged plan view of a portion indicated by region III in FIG. [Figure 4] FIG. 4 is a schematic side view showing a resin structure included in the semiconductor device shown in FIG. [Diagram 5] FIG. 5 is a schematic plan view showing a part of a resin structure included in the semiconductor device in the second embodiment. [Figure 6] FIG. 6 is a schematic plan view showing a part of a resin structure included in the semiconductor device in the third embodiment. [Figure 7] FIG. 7 is a schematic side view showing a cylindrical portion included in the semiconductor device according to the fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] [Description of the embodiments of the present disclosure] First, the embodiments of the present disclosure will be listed and described. The semiconductor device according to the present disclosure includes a substrate, a resin structure surrounding the substrate, and a semiconductor chip mounted on the substrate. The resin structure includes a plurality of flat plate portions each having a through hole penetrating in the thickness direction. Each flat plate portion includes a weld portion having a portion disposed within a length equivalent to the thickness of the flat plate portion from a side wall surface of the through hole. When viewed in the thickness direction of the substrate, at least one of the weld portions is within a range of 180 degrees inside the normal line. The normal line is a normal line of a straight line connecting the center of gravity of a figure formed by connecting the centers of the plurality of through holes to the center of the through holes, and the normal line passes through the center of the through holes.

[0011] In the semiconductor device, the through holes are fixed by bolts, so that in the semiconductor device including the resin structure described above, a very high stress occurs around the through holes during temperature cycles, from the center of the substrate to the outer periphery, i.e., from the center of the resin structure to the outer periphery. According to the semiconductor device of the present disclosure, at least one of the welds is within a range of 180 degrees inside the normal line, as described above. The normal line is a normal line of a straight line connecting the center of gravity of a figure formed by connecting the centers of the multiple through holes to the center of the through holes, and the normal line passes through the center of the through holes. By configuring in this way, when stress is applied from the center of the substrate to the outer periphery as viewed in the thickness direction of the substrate as described above, the flat plate portion can receive the applied stress in a region different from the region where the welds are arranged. Since the strength of the region different from the region where the welds are arranged is higher than the strength of the region where the welds are arranged, the stress can be received in the region with high strength. This reduces the risk of breakage. In addition, the resin structure has a relatively simple shape and is not complicated, so that productivity is good. Therefore, the productivity and reliability of such a semiconductor device can be improved.

[0012] In the semiconductor device, two or more of the plurality of flat plate portions may include a weld portion, which can further reduce the risk of breakage and further improve reliability.

[0013] In the above semiconductor device, all the flat plate portions may include weld portions, which can further reduce the risk of breakage and further improve reliability.

[0014] The semiconductor device of the present disclosure includes a substrate, a resin structure surrounding the substrate, and a semiconductor chip mounted on the substrate. The resin structure is plate-shaped and includes a plurality of flat plate portions each having a through hole penetrating in the thickness direction. At least one of the flat plate portions includes a gate mark. When viewed in the thickness direction of the substrate, at least a portion of the gate mark is within a range of 180 degrees outside the normal line. The normal line is a straight line connecting the center of gravity of a figure formed by connecting the centers of the plurality of through holes to the center of the through holes, and the normal line passes through the center of the through holes.

[0015] In such a semiconductor device, at least a part of the gate mark is within a range of 180 degrees outside the normal line. The normal line is a normal line of a straight line connecting the center of gravity of a figure formed by connecting the centers of the multiple through holes and the center of the through holes, and the normal line passes through the center of the through holes. In this way, it is easy to arrange a weld part formed by joining the resin flowing around the through holes within a range of 180 degrees inside the normal line. Therefore, such a semiconductor device can improve productivity and reliability. Here, the gate is injected using a side gate or a submarine gate, and the gate is cut after injection and remains as a gate mark. The gate mark indicates the position where the resin is injected into the resin structure through the sprue and runner of the injection mold, and does not depend on the size or shape of the gate mark.

[0016] In the semiconductor device, two or more of the plurality of flat plate portions may include gate marks, which can further reduce the risk of breakage and further improve reliability.

[0017] In the semiconductor device, all the flat plate portions may include gate marks, which can further reduce the risk of breakage and further improve reliability.

[0018] In the semiconductor device, the resin structure may be made of a thermoplastic resin, which allows efficient production by injection molding or the like.

[0019] In the semiconductor device, the resin structure may further include a metal tubular portion attached to the through hole. This makes it possible to achieve a strong fixation when fixing the semiconductor device using the through hole, thereby further improving reliability.

[0020] In the semiconductor device, at least a part of the outer circumferential surface of the cylindrical portion may be formed with an uneven shape. In this way, the uneven shape of the outer circumferential surface can be caught by friction with the side wall surface of the through hole, and the risk of the cylindrical portion slipping out of the through hole can be greatly reduced. Therefore, reliability can be further improved.

[0021] In the semiconductor device, the cylindrical portion may include a protruding region protruding from the through hole. In this way, since the cylindrical portion protrudes from the through hole, the inserted bolt can be reliably received by the metallic cylindrical portion having high buckling strength, and the fastening force of the bolt can be improved. Therefore, reliability can be further improved.

[0022] The resin structure of the present disclosure includes a plurality of flat plate portions each having a plate-like through hole penetrating in the thickness direction. Each flat plate portion includes a weld portion having a portion disposed within a length equivalent to the thickness of the flat plate portion from a side wall surface of the through hole. When viewed in the thickness direction of the flat plate portion, the weld portion is within a range of 180 degrees inside the normal line. The normal line is a normal line of a straight line connecting the center of gravity of a figure formed by connecting the centers of the plurality of through holes to the center of the through hole, and the normal line passes through the center of the through hole.

[0023] In such a resin structure, at least one of the welds is within a range of 180 degrees inside the normal line, as described above. The normal line is a normal line of a straight line connecting the center of gravity of a figure formed by connecting the centers of the multiple through holes and the center of the through holes, and the normal line passes through the center of the through holes. By configuring in this way, when stress is applied from the center of the resin structure toward the outer periphery when viewed in the thickness direction of the flat plate part, the flat plate part can receive the applied stress in a region other than the region where the welds are arranged. Since the strength of the region other than the region where the welds are arranged is higher than the strength of the region where the welds are arranged, the stress can be received in a region with high strength. In this way, the risk of breakage can be reduced. In addition, the resin structure has a relatively simple shape and is not complicated, so that the productivity is good. Therefore, such a resin structure can improve productivity and reliability.

[0024] The resin structure of the present disclosure includes a plurality of flat plate portions each having a plate-like through hole penetrating in the thickness direction. At least one of the flat plate portions includes a gate mark. When viewed in the thickness direction of the flat plate portion, at least a portion of the gate mark is within a range of 180 degrees outside the normal line. The normal line is a normal line of a straight line connecting the center of gravity of a figure formed by connecting the centers of the plurality of through holes to the center of the through hole, and the normal line passes through the center of the through hole.

[0025] Such a resin structure is within a range of 180 degrees outside the normal line. The normal line is a normal line of a straight line connecting the center of gravity of a figure formed by connecting the centers of the multiple through holes and the center of the through holes, and the normal line passes through the center of the through hole. By doing so, it becomes easy to arrange a weld portion formed by joining the resin flowing around the through hole within a range of 180 degrees inside the normal line of the straight line that passes through the center of the through hole and connects the center of gravity of a figure formed by connecting the centers of the multiple adjacent through holes and the center of the through hole. Therefore, such a resin structure can improve productivity and reliability.

[0026] [Details of the embodiment of the present disclosure] Next, an embodiment of a semiconductor device according to the present disclosure will be described with reference to the drawings. In the following drawings, the same or corresponding parts are designated by the same reference characters and their description will not be repeated.

[0027] (Embodiment 1) The configuration of the semiconductor device in the first embodiment of the present disclosure will be described. Fig. 1 is a schematic perspective view of the semiconductor device in the first embodiment. Fig. 2 is a schematic plan view of the semiconductor device shown in Fig. 1 when viewed in the thickness direction of the base plate. Fig. 3 is an enlarged plan view of a portion indicated by region III in Fig. 2. Fig. 4 is a schematic side view of a resin structure included in the semiconductor device shown in Fig. 1. Gate marks, which will be described later, are omitted from illustration in Figs. 1 to 3, and the resin structure is illustrated in a simplified manner in Fig. 4.

[0028] 1, 2, 3, and 4, a semiconductor device 11a in the first embodiment includes a base plate 12, a resin structure 20a arranged on the base plate 12, substrates 17a and 17b arranged on the base plate 12, plate-shaped terminals (bus bars) 19a, 19b, 19c, and 19d, capacitors 18a and 18b, semiconductor chips 21a, 21b, 21c, 21d, 21e, 21f, 22a, 22b, 22c, 22d, 22e, and 22f, and press-fit pins 26a, 26b, 26c, 26d, 26e, 26f, 26g, and 26h. The base plate 12 and the resin structure 20a form a case provided in the semiconductor device 11a. A space 30 in the case formed by the base plate 12 and the resin structure 20a is filled with a resin (not shown). The type of resin selected may be, for example, epoxy resin, silicone gel, or urethane resin.

[0029] The base plate 12 is made of metal. The base plate 12 is made of copper, for example. The surface of the base plate 12 may be plated with nickel or the like. The outer shape of the base plate 12 is a rectangle with the long side extending in the X direction and the short side extending in the Y direction when viewed in the thickness direction. The substrates 17a and 17b are each joined to the first surface 12a located on one side of the thickness direction of the base plate 12 by solder or the like (not shown). For example, a heat dissipation fin (not shown) or the like for efficient heat dissipation may be attached to the back surface 12b located on the other side of the thickness direction of the base plate 12. The thickness direction of the base plate 12 and the thickness directions of the substrates 17a and 17b are the Z direction.

[0030] The base plate 12 has four first through holes 12c, 12d, 12e, and 12f penetrating the base plate 12 in the thickness direction. The first through holes 12c, 12d, 12e, and 12f are provided in the portions close to the four corners of the rectangular base plate 12. The first side wall surfaces 12g, 12h, 12i, and 12j constituting the first through holes 12c, 12d, 12e, and 12f each have a straight shape extending along the Z direction. That is, the first through holes 12c, 12d, 12e, and 12f are formed so as to penetrate the regions close to the four corners of the base plate 12 in the Z direction. The first through holes 12c, 12d, 12e, 12f, together with the tubular portions 41a, 41b, 41c, 41d having second through holes 32a, 32b, 32c, 32d and third through holes 42a, 42b, 42c, 42d described later, are effectively utilized when mounting the semiconductor device 11a at a predetermined installation location, for example by accommodating the body portion of a bolt (not shown) in the third through hole 42a, 42b, 42c, 42d.

[0031] The substrate 17a has an insulating plate 14a having insulating properties and a circuit pattern 16a having electrical conductivity. The circuit pattern 16a is disposed on the insulating plate 14a. The substrate 17a has a configuration in which the circuit pattern 16a is laminated on the insulating plate 14a. The circuit pattern 16a is composed of a plurality of circuit plates. In this embodiment, the circuit pattern 16a includes a first circuit plate 15a, a second circuit plate 15b, a third circuit plate 15c, a fourth circuit plate 15d, a fifth circuit plate 15e, and a sixth circuit plate 15f. In this embodiment, the circuit pattern 16a is a copper wiring. Like the substrate 17a, the substrate 17b has an insulating plate 14b having insulating properties and a circuit pattern 16b which is a copper wiring. Circuit pattern 16b includes a seventh circuit board 15g, an eighth circuit board 15h, a ninth circuit board 15i, a tenth circuit board 15j, and an eleventh circuit board 15k.

[0032] Capacitor 18a includes one electrode and the other electrode, one of which is joined to fifth circuit board 15e and the other electrode is joined to sixth circuit board 15f. Capacitor 18b similarly includes one electrode and the other electrode, one of which is joined to tenth circuit board 15j and the other electrode is joined to eleventh circuit board 15k.

[0033] The semiconductor chips 21a, 21b, 21c, 22a, 22b, and 22c are disposed on the first circuit board 15a. The semiconductor chips 21d, 21e, 21f, 22d, 22e, and 22f are disposed on the seventh circuit board 15g. The semiconductor chips 21a, 21b, 21c, 21d, 21e, 21f, 22a, 22b, 22c, 22d, 22e, and 22f are wide band gap semiconductor chips. The wide band gap semiconductor chip refers to a semiconductor chip having a semiconductor layer made of a material whose band gap is larger than that of silicon as an operating layer. The wide band gap semiconductor chip has a semiconductor layer made of, for example, silicon carbide, gallium nitride, or gallium oxide as an operating layer. Such a wide band gap semiconductor chip has a high breakdown voltage and can reduce the resistance of the drift layer, thereby reducing the on-resistance. The semiconductor chips 21a, 21b, 21c, 21d, 21e, and 21f are, for example, Schottky barrier diodes (SBDs), and the semiconductor chips 22a, 22b, 22c, 22d, 22e, and 22f are, for example, metal-oxide-semiconductor field-effect transistors (MOSFETs).

[0034] The resin structure 20a rises from the first surface 12a of the base plate 12 and is attached to the base plate 12 so as to surround the outer periphery of the substrates 17a and 17b when viewed in the thickness direction of the base plate 12. The resin structure 20a includes a second surface 13e facing the first surface 12a. The resin structure 20a is fixed to the base plate 12 by, for example, an adhesive. That is, the first surface 12a of the base plate 12 and the second surface 13e of the resin structure 20a are bonded to each other.

[0035] The resin structure 20a includes a first wall portion 13a, a second wall portion 13b, a third wall portion 13c, and a fourth wall portion 13d. The first wall portion 13a and the second wall portion 13b are arranged to face each other in a direction (Y direction) corresponding to the short side of the base plate 12 when viewed in the thickness direction of the base plate 12. The third wall portion 13c and the fourth wall portion 13d are arranged to face each other in a direction (X direction) corresponding to the long side of the base plate 12 when viewed in the thickness direction of the base plate 12. The first wall portion 13a, the second wall portion 13b, the third wall portion 13c, and the fourth wall portion 13d included in the resin structure 20a each rise in a direction intersecting the first surface 12a. Specifically, the first wall portion 13a, the second wall portion 13b, the third wall portion 13c, and the fourth wall portion 13d each rise perpendicularly to the first surface 12a. The resin structure 20a includes an inner wall surface 27a of the first wall portion 13a, an inner wall surface 27b of the third wall portion 13c facing the inner wall surface 27a, an inner wall surface 27c of the second wall portion 13b continuing with the inner wall surface 27a and the inner wall surface 27b, and an inner wall surface 27d of the fourth wall portion 13d continuing with the inner wall surface 27a and the inner wall surface 27b and facing the inner wall surface 27c.

[0036] The resin structure 20a is made of a thermoplastic resin. A material having high insulating properties and strength is used as the material of the resin structure 20a, specifically, for example, PPS (Polyphenylenesulfide) resin is adopted. Such a resin has good moldability, excellent insulating properties, moisture resistance, and heat resistance, and has high strength. Alternatively, PBT (Poly Butylene Terephtalate) resin may be used as the material of the resin structure 20a. The specific configuration of the resin structure 20a will be described in detail later.

[0037] The terminals (bus bars) 19a, 19b, 19c, and 19d are each plate-shaped and made of metal. The terminals 19a, 19b, 19c, and 19d are each attached to the resin structure 20a. Specifically, the terminals 19a and 19b are attached to the third wall portion 13c. The terminals 19c and 19d are attached to the fourth wall portion 13d. In this embodiment, the terminals 19a, 19b, 19c, and 19d are attached to the resin structure 20a by insert molding. The terminals 19a, 19b, 19c, and 19d each have a curved belt-like shape. In this embodiment, the terminals 19a, 19b, 19c, and 19d are each formed by bending a belt-shaped copper plate, for example. The semiconductor device 11a ensures electrical connection with the outside by the terminals 19a, 19b, 19c, and 19d.

[0038] Terminal 19a and first circuit board 15a are directly joined by ultrasonic bonding. Terminal 19b and second circuit board 15b are directly joined by ultrasonic bonding. Terminal 19c and seventh circuit board 15g are directly joined by ultrasonic bonding. Terminal 19d and seventh circuit board 15g are directly joined by ultrasonic bonding. Note that the bonding between terminal 19a and first circuit board 15a, the bonding between terminal 19b and second circuit board 15b, the bonding between terminal 19c and seventh circuit board 15g, and the bonding between terminal 19d and seventh circuit board 15g may each be performed using a bonding material such as solder.

[0039] The semiconductor chip 21a and the semiconductor chip 22a are connected by a wire 24a. The semiconductor chip 21b and the semiconductor chip 22b are connected by a wire 24b. The semiconductor chip 21c and the semiconductor chip 22c are connected by a wire 24c. The semiconductor chip 21d and the semiconductor chip 22d are connected by a wire 24d. The semiconductor chip 21e and the semiconductor chip 22e are connected by a wire 24e. The semiconductor chip 21f and the semiconductor chip 22f are connected by a wire 24f. The semiconductor chip 22a and the fourth circuit board 15d are connected by a wire 25a. The semiconductor chip 22b and the fourth circuit board 15d are connected by a wire 25b. The semiconductor chip 22c and the fourth circuit board 15d are connected by a wire 25c. The semiconductor chip 22d and the eighth circuit board 15h are connected by a wire 25d. The semiconductor chip 22e and the eighth circuit board 15h are connected by a wire 25e. The semiconductor chip 22f and the eighth circuit board 15h are connected by wires 25f.

[0040] The second circuit board 15b and the eighth circuit board 15h are connected by wire 29a. The fourth circuit board 15d and the seventh circuit board 15g are connected by wire 29b. The semiconductor chips 22a, 22b, and 22c are connected to the third circuit board 15c by wires, and the semiconductor chips 22d, 22e, and 22f are connected to the ninth circuit board 15i by wires. As the wires, thick aluminum wires or ribbon wires may be used.

[0041] The press-fit pins 26a, 26b, 26c, 26d, 26e, 26f, 26g, and 26h are provided to ensure electrical connection with the outside. The press-fit pins 26a, 26b, 26c, 26d, 26e, 26f, 26g, and 26h are each conductive and rod-shaped. The press-fit pins 26a, 26b, 26c, 26d, 26e, 26f, 26g, and 26h are attached to the circuit patterns 16a and 16b so as to rise from the circuit patterns 16a and 16b, respectively. Specifically, one end of the press-fit pin 26a is joined to the third circuit board 15c. One end of the press-fit pin 26b is joined to the fourth circuit board 15d. One end of the press-fit pin 26c is joined to the fifth circuit board 15e. One end of the press-fit pin 26d is joined to the sixth circuit board 15f. One end of the press-fit pin 26e is joined to the ninth circuit board 15i. One end of the press-fit pin 26f is joined to the eighth circuit board 15h. One end of the press-fit pin 26g is joined to the tenth circuit board 15j. One end of the press-fit pin 26h is joined to the eleventh circuit board 15k. The press-fit pins 26a, 26b, 26c, and 26d joined to the circuit pattern 16a are spaced apart from each other in the X direction. The press-fit pins 26e, 26f, 26g, and 26h joined to the circuit pattern 16b are spaced apart from each other in the X direction. The other end of each of the press-fit pins 26a, 26b, 26c, 26d, 26e, 26f, 26g, and 26h is a free end and is in a free state. The press-fit pins 26a, 26b, 26c, 26d, 26e, 26f, 26g, and 26h extend in the Z direction.

[0042] Next, a specific configuration of the resin structure 20a will be described. The resin structure 20a includes a first flat plate portion 31a, a second flat plate portion 31b, a third flat plate portion 31c, and a fourth flat plate portion 31d. The first flat plate portion 31a and the second flat plate portion 31b are provided in a continuous manner with the third wall portion 13c. The first flat plate portion 31a is provided on the outside of the third wall portion 13c, that is, on the opposite side to the side where the space 30 is located in the X direction, and is provided in a continuous manner with the first wall portion 13a. The second flat plate portion 31b is provided on the outside of the third wall portion 13c, that is, on the opposite side to the side where the space 30 is located in the X direction, and is provided in a continuous manner with the second wall portion 13b. The third flat plate portion 31c and the fourth flat plate portion 31d are provided in a continuous manner with the fourth wall portion 13d. The third flat plate portion 31c is provided on the outside of the fourth wall portion 13d, that is, on the opposite side to the side where the space 30 is located in the X direction, and is continuous with the second wall portion 13b. The fourth flat plate portion 31d is provided on the outside of the fourth wall portion 13d, that is, on the opposite side to the side where the space 30 is located in the X direction, and is continuous with the first wall portion 13a. The resin structure 20a includes a surface 13f located on the opposite side to the second surface 13e in the thickness direction of the base plate 12. The surface 13f is provided on the first flat plate portion 31a, the second flat plate portion 31b, the third flat plate portion 31c, and the fourth flat plate portion 31d.

[0043] The resin structure 20a has four second through holes 32a, 32b, 32c, 32d penetrating in the thickness direction of the base plate 12. The second through holes 32a, 32b, 32c, 32d are provided in the first flat plate portion 31a, the second flat plate portion 31b, the third flat plate portion 31c, and the fourth flat plate portion 31d, respectively. The second side wall surfaces 33a, 33b, 33c, 33d constituting the second through holes 32a, 32b, 32c, 32d each have a straight shape extending along the Z direction. The second through holes 32a, 32b, 32c, 32d are formed so as to penetrate the first flat plate portion 31a, the second flat plate portion 31b, the third flat plate portion 31c, and the fourth flat plate portion 31d, respectively, in a straight manner in the Z direction. The second through holes 32a, 32b, 32c, and 32d are arranged so as to coincide with the positions of the first through holes 12c, 12d, 12e, and 12f when the resin structure 20a is placed on the first surface 12a.

[0044] The resin structure 20a includes four metallic cylindrical parts 41a, 41b, 41c, and 41d having third through holes 42a, 42b, 42c, and 42d penetrating in the thickness direction of the base plate 12. The third through holes 42a, 42b, 42c, and 42d are provided in the cylindrical parts 41a, 41b, 41c, and 41d, respectively. The third side wall surfaces 43a, 43b, 43c, and 43d constituting the third through holes 42a, 42b, 42c, and 42d are each straight in shape extending along the Z direction. The four cylindrical parts 41a, 41b, 41c, and 41d are each hollow cylindrical. The four cylindrical parts 41a, 41b, 41c, and 41d are attached to the second through holes 32a, 32b, 32c, and 32d, respectively. The third through holes 42a, 42b, 42c, and 42d are formed so as to penetrate straight in the Z direction when attached to the second through holes 32a, 32b, 32c, and 32d, respectively. Each of the cylindrical portions 41a, 41b, 41c, and 41d is a member also called a collar.

[0045] Each flat plate portion 31a, 31b, 31c, 31d included in the resin structure 20a includes a weld portion 44a, 44b, 44c, 44d having a portion disposed within a length equivalent to the thickness of the flat plate portion 1a, 31b, 31c, 31d from the second side wall surface 33a, 33b, 33c, 33d of the second through hole 32a, 32b, 32c, 32d. In FIG. 2 and FIG. 3, the weld portion 44a, 44b, 44c, 44d is indicated by a thick dashed line. In this embodiment, the weld portion 44a, 44b, 44c, 44d reaches the second side wall surface 33a, 33b, 33c, 33d, respectively. That is, the weld portion 44a, 44b, 44c, 44d extends from a part of the second side wall surface 33a, 33b, 33c, 33d. Here, the weld is a streak-like phenomenon that occurs where molten resin joins, and the portion where this phenomenon occurs is the weld portion 44a, 44b, 44c, 44d. Since the tubular portion 41a, 41b, 41c, 41d is cylindrical, the weld portion 44a, 44b, 44c, 44d is always formed around the second through hole 32a, 32b, 32c, 32d. That is, the flat portion 31a, 31b, 31c, 31d includes the weld portion 44a, 44b, 44c, 44d having a portion disposed within a length equivalent to the thickness of the flat portion 31a, 31b, 31c, 31d from the second side wall surface 33a, 33b, 33c, 33d of the second through hole 32a, 32b, 32c, 32d. In this embodiment, all of the weld portions 44a, 44b, 44c, 44d are included in the flat portions 31a, 31b, 31c, 31d, but this is not limited thereto, and the entire areas of the weld portions 44a, 44b, 44c, 44d may not be contained within the flat portions 31a, 31b, 31c, 31d, and a portion of them may extend, for example, to the first wall portion 13a, the second wall portion 13b, the third wall portion 13c, or the fourth wall portion 13d.

[0046] When viewed in the thickness direction of the substrates 17a and 17b, which is the thickness direction of the flat plate portions 31a, 31b, 31c, and 31d, the welds 44a, 44b, 44c, and 44d are within a range of 180 degrees inside the normals 38a, 38b, 38c, and 38d. The normals 38a, 38b, 38c, 38d are normals 38a, 38b, 38c, 38d to straight lines 36a, 36b connecting the center of gravity 37a of the figure 35a formed by connecting the centers 34a, 34b, 34c, 34d of the multiple second through holes 32a, 32b, 32c, 32d and the centers 34a, 34b, 34c, 34d of the second through holes 32a, 32b, 32c, 32d, and the normals 38a, 38b, 38c, 38d pass through the centers 34a, 34b, 34c, 34d of the second through holes 32a, 32b, 32c, 32d. Specifically, when viewed in the thickness direction of the substrates 17a and 17b, the welds 44a, 44b, 44c, and 44d are disposed in regions 39a, 39b, 39c, and 39d closer to the center of gravity 37a than the normal lines 38a, 38b, 38c, and 38d. In this embodiment, the centers 34a, 34b, 34c, and 34d of the adjacent second through holes 32a, 32b, 32c, and 32d are connected to form a figure 35a. The angle of 180 degrees is illustrated as angle θ in FIG. 3. In addition, if the normal lines 38a, 38b, 38c, 38d of the straight lines 36a, 36b that connect the center of gravity 37a of the figure 35a formed by connecting the centers 34a, 34b, 34c, 34d of the second through holes 32a, 32b, 32c, 32d and the centers 34a, 34b, 34c, 34d of the second through holes 32a, 32b, 32c, 32d are defined as first straight lines, the welds 44a, 44b, 44c, 44d are within a range of 180 degrees inside the first straight line when viewed in the thickness direction of the substrates 17a, 17b. In this embodiment, the figure 35a is a rectangle. Moreover, straight lines 36a and 36b are diagonal lines of rectangular shape 35a. Center of gravity 37a is the intersection point of straight lines 36a and 36b. In Figures 2, 3, and 4, shape 35a is shown by a dashed line, diagonal lines 36a and 36b are shown by dashed lines, and normal lines 38a, 38b, 38c, and 38d are shown by dashed lines.

[0047] Further, the flat plate portions 31a, 31b, 31c, 31d include gate marks 52a, 52b, 52c, 52d. When viewed in the thickness direction of the substrates 17a, 17b, the gate marks 52a, 52b, 52c, 52d are within a range of 180 degrees outside the normal lines 38a, 38b, 38c, 38d. Specifically, when viewed in the thickness direction of the substrates 17a, 17b, the flat plate portions 31a, 31b, 31c, 31d include the gate marks 52a, 52b, 52c, 52d that are located in the regions 40a, 40b, 40c, 40d on the opposite side to the center of gravity 37a side from the normal lines 38a, 38b, 38c, 38d (see FIG. 4 in particular). In addition, if normals 38a, 38b, 38c, 38d of straight lines 36a, 36b that pass through the centers 34a, 34b, 34c, 34d of second through holes 32a, 32b, 32c, 32d and connect the centers 34a, 34b, 34c, 34d of the multiple second through holes 32a, 32b, 32c, 32d to the center of gravity 37a of figure 35a, which is formed by connecting the centers 34a, 34b, 34c, 34d of the second through holes 32a, 32b, 32c, 32d, are defined as first straight lines, then when viewed in the thickness direction of substrates 17a, 17b, the gate marks 52a, 52b, 52c, 52d are within a range of 180 degrees outside the first straight line.

[0048] Next, an example of a manufacturing method of the resin structure 20a having such a configuration will be briefly described. A mold is prepared so that the final shape of the resin structure 20a, that is, the terminals 19a, 19b, 19c, and 19d are attached by inserts, the first wall portion 13a, the second wall portion 13b, the third wall portion 13c, and the fourth wall portion 13d are included, and the flat plate portions 31a, 31b, 31c, and 31d are included. Then, injection molding is performed. Here, the resin is injected into the mold from four places indicated by arrows 51a, 51b, 51c, and 51d in FIG. 2. That is, the resin is injected from the side of the regions 40a, 40b, 40c, and 40d.

[0049] 3, since a mold is placed in the region where the second through hole 32b is located, the injected resin flows along the arrows F1 and F2, going around the region where the second through hole 32b is located. Then, the resin flows join at the weld portion 44b. In this manner, the resin structure 20a is manufactured. The semiconductor device 11a is manufactured using the resin structure 20a.

[0050] In such a semiconductor device 11a, the welds 44a, 44b, 44c, and 44d are located within a range of 180 degrees inward from the normals 38a, 38b, 38c, and 38d, as described above. The normal lines 38a, 38b, 38c, 38d are normal lines 38a, 38b, 38c, 38d of the straight lines 36a, 36b that connect the center of gravity 37a of the figure 35a formed by connecting the centers 34a, 34b, 34c, 34d of the second through holes 32a, 32b, 32c, 32d and the centers 34a, 34b, 34c, 34d of the second through holes 32a, 32b, 32c, 32d, and the normal lines 38a, 38b, 38c, 38d pass through the centers 34a, 34b, 34c, 34d of the second through holes 32a, 32b, 32c, 32d. In this embodiment, for example, when a temperature cycle is performed in which the temperature is repeatedly increased and decreased, stress is applied toward the outside of the semiconductor device 11a of the diagonal straight lines 36a, 36b. As described above, when stress is applied from the center of the substrate 17a, 17b toward the outer periphery when viewed in the thickness direction of the substrate 17a, 17b, the flat plate portion 31a, 31b, 31c, 31d can receive the applied stress in the region 40a, 40b, 40c, 40d different from the region 39a, 39b, 39c, 39d where the weld portion 44a, 44b, 44c, 44d is arranged. Since the strength of the region 40a, 40b, 40c, 40d different from the region 39a, 39b, 39c, 39d where the weld portion 44a, 44b, 44c, 44d is arranged is higher than the strength of the region 39a, 39b, 39c, 39d where the weld portion 44a, 44b, 44c, 44d is arranged, the stress can be received in the high strength region. This can reduce the risk of breakage. Moreover, the resin structure 20a has a relatively simple shape, not a complicated shape, and therefore has good productivity, and therefore the semiconductor device 11a can have improved productivity and reliability.

[0051] In addition, according to the above-mentioned manufacturing method, when injection molding is performed while applying a holding pressure, it is possible to suppress the occurrence of voids in the flat plate parts 31a, 31b, 31c, 31d around the second through holes 32a, 32b, 32c, 32d. In addition, the temperature of the molten resin decreases and the strength decreases as the molten resin flows in the injection mold farther from the gate. According to the above-mentioned manufacturing method, since the gate is located near the flat plate parts 31a, 31b, 31c, 31d, the temperature of the molten resin can be always high when molding the flat plate parts 31a, 31b, 31c, 31d. Therefore, the risk of breakage can be further reduced.

[0052] In addition, when viewed in the thickness direction of the substrates 17a and 17b, the gate marks 52a, 52b, 52c, and 52d are within a range of 180 degrees outside the normal lines 38a, 38b, 38c, and 38d. With the semiconductor device 11a including such a resin structure 20a, it is easy to arrange the welds 44a, 44b, 44c, and 44d formed by the joining of the resin flowing around the second through holes 32a, 32b, 32c, and 32d within a range of 180 degrees inside the normal lines 38a, 38b, 38c, and 38d. Therefore, the semiconductor device 11a can improve productivity and reliability.

[0053] (Embodiment 2) Next, another embodiment, embodiment 2, will be described. Fig. 5 is a schematic plan view showing a part of a resin structure included in a semiconductor device in embodiment 2. The resin structure included in the semiconductor device of embodiment 2 differs from embodiment 1 in that the number of second through holes is two.

[0054] 5, the resin structure 20b included in the semiconductor device is plate-shaped and includes two flat plate portions 31a, 31b each having a second through hole 32a, 32b penetrating in the thickness direction. Each flat plate portion 31a, 31b includes a weld portion 44a, 44b having a portion disposed within a length equivalent to the thickness of the flat plate portions 31a, 31b from a second side wall surface 33a, 33b of the second through hole 32a, 32b. When viewed in the thickness direction of the substrates 17a, 17b, which is the thickness direction of the flat plate portions 31a, 31b, the weld portions 44a, 44b are within a range of 180 degrees inward from the normal lines 38a, 38b. The normal lines 38a, 38b are normal lines 38a, 38b of a straight line 36a that connects the center of gravity 37a of the figure 35a formed by connecting the centers 34a, 34b of the second through holes 32a, 32b to the centers 34a, 34b of the second through holes 32a, 32b, and the normal lines 38a, 38b pass through the centers 34a, 34b of the second through holes 32a, 32b. Specifically, the welds 44a, 44b are disposed in regions 39a, 39b on the center of gravity 37a side of the normal lines 38a, 38b when viewed in the thickness direction of the substrates 17a, 17b. In this embodiment, the figure 35a is represented by a straight line 36a. In this embodiment, the center of gravity 37a is the midpoint of the line segment that connects the centers 34a and 34b.

[0055] Furthermore, when viewed in the thickness direction of the substrates 17a, 17b, the gate marks 52a, 52b are within a range of 180 degrees outside the normal lines 38a, 38b. Specifically, when viewed in the thickness direction of the substrates 17a, 17b, the flat plate portions 31a, 31b include the gate marks 52a, 52b arranged in the regions 40a, 40b on the opposite side to the center of gravity 37a side from the normal lines 38a, 38b.

[0056] In such a resin structure 20b and in a semiconductor device including such a resin structure 20b, it is possible to improve productivity and reliability.

[0057] (Embodiment 3) Next, a third embodiment, which is yet another embodiment, will be described. Fig. 6 is a schematic plan view showing a part of a resin structure included in a semiconductor device in the third embodiment. The resin structure included in the semiconductor device of the third embodiment differs from that of the first embodiment in that the number of second through holes is three.

[0058] 6, the resin structure 20c included in the semiconductor device is plate-shaped and includes three flat plate portions 31a, 31b, and 31c each having a second through hole 32a, 32b, and 32c penetrating in the thickness direction. Each flat plate portion 31a, 31b, and 31c includes a weld portion 44a, 44b, and 44c having a portion located within a length equivalent to the thickness of the flat plate portion 31a, 31b, and 31c from a second side wall surface 33a, 33b, and 33c of the second through hole 32a, 32b, and 32c. When viewed in the thickness direction of the substrate, the weld portion 44a, 44b, and 44c is within a range of 180 degrees inside the normal line 38a, 38b, and 38c. The normal lines 38a, 38b, 38c are normal lines 38a, 38b, 38c of straight lines 36a, 36b, 36c that connect the center of gravity 37a of the figure 35a formed by connecting the centers 34a, 34b, 34c of the second through holes 32a, 32b, 32c and the centers 34a, 34b, 34c of the second through holes 32a, 32b, 32c, and the normal lines 38a, 38b, 38c pass through the centers 34a, 34b, 34c of the second through holes 32a, 32b, 32c. Specifically, the welds 44a, 44b, 44c are disposed in regions 39a, 39b, 39c that are closer to the center of gravity 37a than the normal lines 38a, 38b, 38c when viewed in the thickness direction of the substrates 17a, 17b. In this embodiment, the figure 35a is represented by a triangle.

[0059] Further, when viewed in the thickness direction of the substrates 17a, 17b, the gate marks 52a, 52b, 52c are within a range of 180 degrees outside the normal lines 38a, 38b, 38c. Specifically, when viewed in the thickness direction of the substrates 17a, 17b, the flat plate portions 31a, 31b, 31c include the gate marks 52a, 52b, 52c that are located in the regions 40a, 40b, 40c on the opposite side to the center of gravity 37a side from the normal lines 38a, 38b, 38c.

[0060] In such a resin structure 20c and in a semiconductor device including such a resin structure 20c, it is possible to improve productivity and reliability.

[0061] (Embodiment 4) Next, a fourth embodiment, which is yet another embodiment, will be described. Fig. 7 is a schematic side view showing a cylindrical portion included in a semiconductor device in the fourth embodiment. The semiconductor device in the fourth embodiment differs from the first embodiment in that the shape of the cylindrical portion is different.

[0062] Referring to FIG. 7, an outer peripheral surface 62a of a cylindrical portion 61a included in a resin structure provided in a semiconductor device includes a first region 63a located at one end side, a second region 64a located at the other end side, and a third region 65a located between the first region 63a and the second region 64a. The length of the cylindrical portion 61a, i.e., the length in the Z direction, is longer than the thickness of the flat plate portions 31a, 31b, 31c, and 31d. When the cylindrical portion 61a is disposed in the second through holes 32a, 32b, 32c, and 32d, the first region 63a protrudes. That is, the cylindrical portion 61a includes a protruding region protruding from the second through holes 32a, 32b, 32c, and 32d. In addition, an uneven shape is formed in the third region 65a. In this embodiment, a minute uneven shape is formed in the third region 65a. The third region 65a is knurled.

[0063] This configuration makes it possible to greatly reduce the risk of the cylindrical portion slipping out of the second through-holes 32a, 32b, 32c, and 32d due to the friction between the uneven surface of the outer circumferential surface 62a and the second side wall surfaces 33a, 33b, 33c, and 33d of the second through-holes 32a, 32b, 32c, and 32d. Therefore, it is possible to further improve reliability.

[0064] In addition, by doing so, the cylindrical portion 61a protrudes from the second through holes 32a, 32b, 32c, and 32d, so that the inserted bolt can be reliably received by the metallic cylindrical portion 61a, which has high buckling strength, improving the fastening force of the bolt, thereby further improving reliability.

[0065] (Other embodiments) In the above embodiment, the weld portion is configured to reach the side wall surface of the second through hole, but this is not limited to the above, and the weld portion may have a portion that does not reach the side wall surface of the second through hole and is positioned within a length equivalent to the thickness of the flat portion from the second side wall surface of the second through hole.

[0066] In the above embodiment, all the flat plate portions include the weld portion, but this is not limiting, and at least one of the flat plate portions may include the weld portion. Also, two or more of the flat plate portions may include the weld portion. In this way, the risk of breakage can be further reduced, and reliability can be further improved.

[0067] In the above embodiment, all the flat plate parts include the gate marks, but this is not limiting, and at least one of the flat plate parts may include the gate marks. Also, two or more of the flat plate parts may include the gate marks. In this way, the risk of breakage can be further reduced, and reliability can be further improved.

[0068] In the above embodiment, at least one of the welds is within 180 degrees from the normal line in the thickness direction of the board, but this is not limited thereto. At least one of the welds may be within 120 degrees from the normal line, or within 90 degrees from the normal line, with the straight line connecting the center of gravity of the figure connecting the centers of the through holes and the center of the through holes as the center. That is, in the case shown in the first embodiment (FIG. 3), the angle θ may be within 120 degrees, or even within 90 degrees, with the straight line 36b as the center. In this way, the flat plate portion can more reliably receive stress applied to a region other than the region where the welds are arranged. Therefore, the risk of breakage can be further reduced.

[0069] In the above embodiment, at least one of the gate marks is within 180 degrees outward from the normal when viewed in the thickness direction of the substrate, but this is not limiting, and at least one of the welds may be within 120 degrees outward from the normal, or may be within 90 degrees outward from the normal, with the center being the line connecting the center of gravity of the figure formed by connecting the centers of the through holes. This makes it easier to position the weld formed by the joining of resin flowing around the through holes within a range of 180 degrees inward from the normal.

[0070] It should be understood that the embodiments disclosed herein are illustrative in all respects and are not limiting in any respect. The scope of the present invention is defined by the claims, not the above description, and is intended to include all modifications within the meaning and scope of the claims. [Industrial Applicability]

[0071] The semiconductor device and resin structure of the present disclosure can be particularly advantageously applied in cases where improved productivity and reliability are required. [Explanation of symbols]

[0072] 11a Semiconductor device 12 Base plate 12a First Side 12b Back 12c,12d,12e,12f 1st through hole 12g,12h,12i,12j 1st side wall surface 13a 1st wall 13b 2nd wall part 13c 3rd wall section 13d Fourth wall 13e The Second Side 13f surface 14a, 14b Insulating plate 15a 1st circuit board 15b 2nd circuit board 15c 3rd circuit board 15d 4th circuit board 15e 5th circuit board 15f 6th circuit board 15g 7th circuit board 15h 8th circuit board 15i 9th circuit board 15j 10th circuit board 15k 11th circuit board 16a, 16b Circuit pattern 17a, 17b Substrate 18a, 18b Capacitor 19a, 19b, 19c, 19d terminals 20a, 20b, 20c Resin structure 21a, 21b, 21c, 21d, 21e, 21f, 22a, 22b, 22c, 22d, 22e, 22f Semiconductor chips 24a, 24b, 24c, 24d, 24e, 24f, 25a, 25b, 25c, 25d, 25e, 25f, 29a, 29b Wire 26a, 26b, 26c, 26d, 26e, 26f, 26g, 26h Press-fit pins 27a,27b,27c,27d Inner wall surface 31a,31b,31c,31d Flat plate part 32a, 32b, 32c, 32d 2nd through hole 33a, 33b, 33c, 33d 2nd side wall surface 34a,34b,34c,34d center 35a Shape 36a,36b,36c straight line 37a Center of gravity 38a,38b,38c,38d normal 39a,39b,39c,39d,40a,40b,40c,40d area 41a, 41b, 41c, 41d, 61a Cylindrical part 42a, 42b, 42c, 42d 3rd through hole 43a, 43b, 43c, 43d Third side wall surface 44a, 44b, 44c, 44d Weld 51a, 51b, 51c, 51d, F1 and F2 arrows 52a, 52b, 52c, 52d gate marks 62a outer peripheral surface 63a first region 64a second region 65a third region θ angle

Claims

1. A substrate; A resin structure surrounding the substrate; A semiconductor chip mounted on the substrate, The resin structure includes a plurality of flat plate portions each having a through hole extending therethrough in a thickness direction, Each of the flat plate portions includes a weld portion having a portion disposed within a length equivalent to a thickness of the flat plate portion from a side wall surface of the through hole, When viewed in the thickness direction of the substrate, at least one of the welds is within a range of 180 degrees inside from a normal line, the normal line is a normal line of a straight line connecting the center of the through hole and the center of gravity of a figure formed by connecting the centers of the plurality of through holes, and The normal line passes through the center of the through hole, The semiconductor device, wherein the flat plate portion has the weld portion within a range of 180 degrees inside the normal line, and the flat plate portion has no weld portion within a range of 180 degrees outside the normal line.

2. The semiconductor device according to claim 1 , wherein at least two of the plurality of flat plate portions include the weld portion.

3. 3. The semiconductor device according to claim 1, wherein all of said flat plate portions include said weld portions.

4. A substrate; A resin structure surrounding the substrate; A semiconductor chip mounted on the substrate, The resin structure includes a plurality of flat plate portions each having a through hole extending therethrough in a thickness direction, At least one of the flat plate portions includes a gate mark, When viewed in a thickness direction of the substrate, at least a part of the gate mark is within a range of 180 degrees outside a normal line, the normal line is a normal line of a straight line connecting the center of the through hole and the center of gravity of a figure formed by connecting the centers of the plurality of through holes, and The normal line passes through a center of the through hole.

5. The semiconductor device according to claim 4 , wherein at least two of the plurality of flat plate portions include the gate mark.

6. 6. The semiconductor device according to claim 4, wherein all of said flat plate portions include said gate marks.

7. The semiconductor device according to claim 1 , wherein the resin structure is made of a thermoplastic resin.

8. The semiconductor device according to claim 1 , wherein the resin structure further includes a metallic tubular portion attached to the through hole.

9. The semiconductor device according to claim 8 , wherein at least a part of an outer circumferential surface of the cylindrical portion is formed with projections and recesses.

10. The semiconductor device according to claim 8 , wherein the cylindrical portion includes a protruding region protruding from the through hole.

11. The plate-shaped plate includes a plurality of flat plate portions each having a through hole extending therethrough in a thickness direction, Each of the flat plate portions includes a weld portion having a portion disposed within a length equivalent to a thickness of the flat plate portion from a side wall surface of the through hole, When viewed in the thickness direction of the flat plate portion, at least one of the weld portions is within a range of 180 degrees inside from the normal line, the normal line is a normal line of a straight line connecting the center of the through hole and the center of gravity of a figure formed by connecting the centers of the plurality of through holes, and The normal line passes through the center of the through hole, The resin structure, wherein the flat plate portion has the weld portion within a range of 180 degrees inside the normal line, and the flat plate portion has no weld portion within a range of 180 degrees outside the normal line.

12. The plate-shaped plate includes a plurality of flat plate portions each having a through hole extending therethrough in a thickness direction, At least one of the flat plate portions includes a gate mark, When viewed in a thickness direction of the flat plate portion, at least a part of the gate mark is within a range of 180 degrees outside the normal line, the normal line is a normal line of a straight line connecting the center of the through hole and the center of gravity of a figure formed by connecting the centers of the plurality of through holes, and The normal line passes through the center of the through hole.

Images