Substrate for printed wiring board and printed wiring board

Abstract

In the present invention, a substrate for a printed wiring board comprises: a base film having a first main surface and a second main surface; a first electrically conductive layer disposed on the first main surface; a second electrically conductive layer disposed on the second main surface; a first electroless copper plating layer disposed on the first electrically conductive layer; a second electroless copper plating layer disposed on the second electrically conductive layer; and a third electroless copper plating layer. A through-hole penetrating through the base film along the thickness direction is formed in the base film. The third electroless copper plating layer is disposed on the inner wall surface of the through hole. The palladium content of the base film in the first main surface and the second main surface is smaller than palladium content of the base film in the inner wall surface.

Description

[Technical field]

[0001] The present disclosure relates to a substrate for a printed wiring board and a printed wiring board. This application claims priority based on Japanese Patent Application No. 2022-053407, filed on March 29, 2022. All contents of the Japanese patent application are incorporated herein by reference. [Background technology]

[0002] For example, International Publication No. 2019 / 208077 (Patent Document 1) describes a substrate for a printed wiring board. The substrate for a printed wiring board described in Patent Document 1 has a base film, a first sintered body layer, a second sintered body layer, a first electroless copper plating layer, and a second electroless copper plating layer.

[0003] The base film has a first main surface and a second main surface. The first sintered body layer and the second sintered body layer are disposed on the first main surface and the second main surface, respectively. The first sintered body layer and the second sintered body layer are formed by sintering a plurality of copper particles. The first electroless copper plating layer and the second electroless copper plating layer are disposed on the first sintered body layer and the second sintered body layer, respectively. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] International Publication No. 2019 / 208077 Summary of the Invention

[0005] The substrate for printed wiring board of the present disclosure includes a base film having a first main surface and a second main surface, a first conductive layer disposed on the first main surface, a second conductive layer disposed on the second main surface, a first electroless copper plating layer disposed on the first conductive layer, a second electroless copper plating layer disposed on the second conductive layer, and a third electroless copper plating layer. The base film has a through hole penetrating the base film in the thickness direction. The third electroless copper plating layer is disposed on the inner wall surface of the through hole. The amount of palladium in the base film on the first main surface and the second main surface is less than the amount of palladium in the base film on the inner wall surface. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a cross-sectional view of a substrate 100 for a printed wiring board. [Diagram 2] FIG. 2 is a manufacturing process diagram of the substrate 100 for a printed wiring board. [Diagram 3] FIG. 3 is a cross-sectional view illustrating the preparation step S1. [Figure 4] FIG. 4 is a cross-sectional view illustrating the conductive layer forming step S2. [Diagram 5] FIG. 5 is a cross-sectional view illustrating the through hole forming step S3. [Figure 6] FIG. 6 is a cross-sectional view illustrating the catalyst application step S4. [Figure 7] FIG. 7 is a cross-sectional view illustrating the film peeling step S5. [Figure 8] FIG. 8 is a schematic diagram of a plating apparatus 300 used in the electroless plating step S6. [Figure 9] FIG. 9 is a cross-sectional view illustrating the first step S61. [Figure 10] FIG. 10 is a cross-sectional view illustrating the second step S62. [Figure 11] FIG. 11 is a cross-sectional view of the printed wiring board 200. [Figure 12] FIG. 12 is a manufacturing process diagram of the printed wiring board 200. [Figure 13]FIG. 13 is a cross-sectional view illustrating the resist pattern forming step S7. [Figure 14] FIG. 14 is a cross-sectional view illustrating the electrolytic plating step S8. [Figure 15] FIG. 15 is a cross-sectional view illustrating the resist pattern removing step S9. [Figure 16] FIG. 16 is a plan view of the first evaluation TEG. [Figure 17] FIG. 17 is a plan view of the second evaluation TEG. [Figure 18] FIG. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] [Problem that this disclosure aims to solve] However, when attempting to form a printed wiring board having a first wiring on a first main surface and a second wiring on a second main surface using the substrate for printed wiring board described in Patent Document 1, it is not possible to achieve fine pitch for the first wiring and the second wiring while ensuring the reliability of conductivity between the first wiring and the second wiring.

[0008] The present disclosure has been made in consideration of the problems of the conventional techniques as described above. More specifically, the present disclosure provides a substrate for a printed wiring board that enables fine pitch wiring while ensuring reliability of conduction between wiring formed on one main surface and wiring formed on the other main surface.

[0009] [Effects of this disclosure] According to the substrate for printed wiring board of the present disclosure, it is possible to achieve finer pitch wiring while ensuring reliable electrical continuity between wiring formed on one main surface and wiring formed on the other main surface.

[0010] [Description of the embodiments of the present disclosure] First, embodiments of the present disclosure will be listed and described.

[0011] (1) A substrate for printed wiring board according to an embodiment includes a base film having a first main surface and a second main surface, a first conductive layer disposed on the first main surface, a second conductive layer disposed on the second main surface, a first electroless copper plating layer disposed on the first conductive layer, a second electroless copper plating layer disposed on the second conductive layer, and a third electroless copper plating layer. The base film has a through hole penetrating the base film in the thickness direction. The third electroless copper plating layer is disposed on the inner wall surface of the through hole. The amount of palladium in the base film on the first main surface and the second main surface is less than the amount of palladium in the base film on the inner wall surface. According to the substrate for printed wiring board of (1), fine pitch of wiring can be achieved while ensuring the reliability of conduction between the wiring formed on the first main surface and the wiring formed on the second main surface.

[0012] (2) In the substrate for printed wiring boards of (1) above, the amount of palladium in the base film on the first and second main surfaces may be 0.02 atomic percent or less. The amount of palladium in the base film on the inner wall surface may be 0.06 atomic percent or more. With the substrate for printed wiring boards of (2) above, it is possible to further ensure the reliability of conduction between the wiring formed on the first main surface and the wiring formed on the second main surface, while enabling the wiring to be formed at a finer pitch.

[0013] (3) In the substrate for printed wiring boards of (1) or (2) above, the amount of palladium in the base film on the first and second main surfaces may be 0.008 atomic percent or less. The amount of palladium in the base film on the inner wall surface may be 0.07 atomic percent or more. According to the substrate for printed wiring boards of (3) above, it is possible to further ensure the reliability of conduction between the wiring formed on the first main surface and the wiring formed on the second main surface, while enabling the wiring to be formed at a finer pitch.

[0014] (4) In the substrate for printed wiring board according to any one of (1) to (3) above, the first conductive layer and the second conductive layer may be layers containing a plurality of sintered copper particles.

[0015] (5) In the substrate for printed wiring board described above in (4), the amount of palladium in the first conductive layer and the second conductive layer may be 0.08 atomic percent or less.

[0016] (6) In the substrate for printed wiring board according to any one of (1) to (5) above, the amount of palladium in the first electroless copper plated layer and the second electroless copper plated layer may be 0.07 atomic percent or less.

[0017] (7) In the substrate for printed wiring board according to any one of (1) to (6) above, the amount of nickel in the base film on the first and second main surfaces may be less than the amount of nickel in the base film on the inner wall surface.

[0018] (8) A printed wiring board according to an embodiment includes a base film having a first main surface and a second main surface, a first conductive layer disposed on the first main surface, a first electroless copper plating layer disposed on the first conductive layer, and a first wiring having a first electroless copper plating layer disposed on the first electroless copper plating layer, a second conductive layer disposed on the second main surface, a second electroless copper plating layer disposed on the second conductive layer, and a second wiring having a second electroless copper plating layer disposed on the second electroless copper plating layer, a third electroless copper plating layer, and a third electroless copper plating layer. The base film has a through hole penetrating the base film in the thickness direction. The third electroless copper plating layer is disposed on the inner wall surface of the through hole. The third electroless copper plating layer is disposed on the third electroless copper plating layer. The first wiring is electrically connected to the second wiring by the third electroless copper plating layer and the third electroless copper plating layer. The amount of palladium in the base film on the first and second main surfaces is less than the amount of palladium in the base film on the inner wall surface. According to the printed wiring board of (8) above, the first wiring and the second wiring can be arranged at a finer pitch while ensuring the reliability of conduction between the first wiring and the second wiring.

[0019] (9) In the printed wiring board of (8) above, the distance between two adjacent portions of the first wiring that are spaced apart and the distance between two adjacent portions of the second wiring that are spaced apart may be 20 μm or less.

[0020] [Details of the embodiment of the present disclosure] The details of the embodiment of the present disclosure will be described with reference to the drawings. In the following drawings, the same or corresponding parts are given the same reference symbols, and duplicated explanations will not be repeated. The substrate for a printed wiring board and the printed wiring board according to the embodiment are referred to as a substrate for a printed wiring board 100 and a printed wiring board 200, respectively.

[0021] (Configuration of printed wiring board substrate 100) The configuration of the printed wiring board substrate 100 will be described below.

[0022] Fig. 1 is a cross-sectional view of a substrate 100 for printed wiring boards. As shown in Fig. 1, the substrate 100 for printed wiring boards has a base film 10, a first conductive layer 21, a second conductive layer 22, a first electroless copper plating layer 31, a second electroless copper plating layer 32, and a third electroless copper plating layer 33.

[0023] The base film 10 has a first main surface 10a and a second main surface 10b. The first main surface 10a and the second main surface 10b are end surfaces in the thickness direction of the base film 10. The second main surface 10b is the opposite surface to the first main surface 10a. A through hole 10c is formed in the base film 10. The through hole 10c penetrates the base film 10 along the thickness direction. The base film 10 is made of a flexible insulating material. The base film 10 is made of, for example, polyimide, liquid crystal polymer, fluororesin, etc. However, the constituent material of the base film 10 is not limited to these.

[0024] The amount of palladium in the base film 10 on the first main surface 10a and the second main surface 10b is less than the amount of palladium in the base film 10 on the inner wall surfaces of the through holes 10c. The amount of nickel in the base film 10 on the first main surface 10a and the second main surface 10b may be less than the amount of nickel in the base film 10 on the inner wall surfaces of the through holes 10c.

[0025] The amount of palladium in the base film 10 at the first main surface 10a and the second main surface 10b may be 0.02 atomic percent or less. The amount of palladium in the base film 10 at the first main surface 10a and the second main surface 10b may be 0.008 atomic percent or less. The amount of palladium in the base film 10 at the inner wall surface of the through hole 10c may be 0.06 atomic percent or more. The amount of palladium in the base film 10 at the inner wall surface of the through hole 10c may be 0.07 atomic percent or more.

[0026] The amount of palladium in the base film 10 is measured by an energy dispersive X-ray analyzer (e.g., SU8020 manufactured by Hitachi High-Technologies Corporation). The acceleration voltage during the measurement is 6 kV. The measurement position of the amount of palladium in the base film 10 on the first main surface 10a is any region up to a position 100 nm away from the interface with the first conductive layer 21. The measurement position of the amount of palladium in the base film 10 on the second main surface 10b is any region up to a position 100 nm away from the interface with the second conductive layer 22. The measurement position of the amount of palladium in the base film 10 on the inner wall surface of the through hole 10c is any region up to a position 100 nm away from the interface with the third electroless copper plating layer 33. The amount of nickel in the base film 10 is measured by the same method as the amount of palladium in the base film 10.

[0027] The first conductive layer 21 is disposed on the first main surface 10a. The first conductive layer 21 is formed of a plurality of sintered copper particles. Therefore, the first conductive layer 21 is porous. The average particle size of the copper particles contained in the first conductive layer 21 may be 1 nm or more, or 30 nm or more. The average particle size of the copper particles contained in the first conductive layer 21 may be 100 nm or less, or 500 nm or less. That is, the copper particles contained in the first conductive layer 21 may be nano-copper particles. The average particle size of the copper particles contained in the first conductive layer 21 is measured by a particle size distribution measuring device (for example, a Microtrack particle size distribution meter UPA-150EX manufactured by Nikkiso Co., Ltd.).

[0028] The second conductive layer 22 is disposed on the second main surface 10b. The second conductive layer 22 is formed of a plurality of sintered copper particles. Therefore, the second conductive layer 22 is porous. The average particle size of the copper particles contained in the second conductive layer 22 may be 1 nm or more or 30 nm or more. The average particle size of the copper particles contained in the second conductive layer 22 may be 100 nm or less or 500 nm or less. That is, the copper particles contained in the second conductive layer 22 may be nano-copper particles. The average particle size of the copper particles contained in the second conductive layer 22 is measured by the same method as the average particle size of the copper particles contained in the first conductive layer 21.

[0029] The amount of palladium in the first conductive layer 21 and the second conductive layer 22 may be 0.08 atomic percent or less. The amount of palladium in the first conductive layer 21 and the second conductive layer 22 may be 0 atomic percent. From another perspective, palladium may not be contained in the first conductive layer 21 and the second conductive layer 22. The amount of palladium in the first conductive layer 21 is the content of palladium in any region including the entire thickness direction from the interface between the base film 10 and the first conductive layer 21 to the interface between the first conductive layer 21 and the first electroless copper plating layer 31. The amount of palladium in the second conductive layer 22 is the content of palladium in any region including the entire thickness direction from the interface between the base film 10 and the second conductive layer 22 to the interface between the second conductive layer 22 and the second electroless copper plating layer 32. The amount of palladium in the first conductive layer 21 and the amount of palladium in the second conductive layer 22 are measured by the same method as the amount of palladium in the base film 10 except for the measurement area.

[0030] The first conductive layer 21 has a through hole 21a penetrating the first conductive layer 21 along the thickness direction. The second conductive layer 22 has a through hole 22a penetrating the second conductive layer 22 along the thickness direction. The through holes 21a and 22a overlap with the through hole 10c in a plan view. The inner wall surfaces of the through holes 21a and 22a are continuous with the inner wall surface of the through hole 10c.

[0031] In the above example, the constituent material of the first conductive layer 21 and the second conductive layer 22 is a sintered body of copper particles, but the first conductive layer 21 and the second conductive layer 22 are not limited to layers composed of a sintered body.

[0032] The first electroless copper plating layer 31 is disposed on the first conductive layer 21. The first electroless copper plating layer 31 is a copper layer formed by electroless plating. The amount of palladium in the first electroless copper plating layer 31 may be 0.07 atomic percent or less. The second electroless copper plating layer 32 is disposed on the second conductive layer 22. The second electroless copper plating layer 32 is a copper layer formed by electroless plating. The amount of palladium in the second electroless copper plating layer 32 may be 0.07 atomic percent or less. The amount of palladium in the first electroless copper plating layer 31 is the content of palladium in any region including the entire thickness direction from the interface between the first conductive layer 21 and the first electroless copper plating layer 31 to the surface of the first electroless copper plating layer 31 opposite to the interface. The amount of palladium in second electroless copper plating layer 32 is the content of palladium in any region including the entire thickness direction from the interface between second conductive layer 22 and second electroless copper plating layer 32 to the surface of second electroless copper plating layer 32 opposite to the interface. The amount of palladium in first electroless copper plating layer 31 and the amount of palladium in second electroless copper plating layer 32 are measured by the same method as the amount of palladium in base film 10, except for the measurement region.

[0033] The third electroless copper plating layer 33 is disposed on the inner wall surface of the through hole 10c. The third electroless copper plating layer 33 is also disposed on the inner wall surface of the through hole 21a and the inner wall surface of the through hole 22a. The third electroless copper plating layer 33 is a copper layer formed by electroless plating. The first electroless copper plating layer 31, the second electroless copper plating layer 32 and the third electroless copper plating layer 33 may contain nickel.

[0034] (Method of manufacturing the substrate 100 for printed wiring board) A method for manufacturing the printed wiring board substrate 100 will be described below.

[0035] Fig. 2 is a manufacturing process diagram of the substrate 100 for printed wiring boards. As shown in Fig. 2, the manufacturing method of the substrate 100 for printed wiring boards includes a preparation step S1, a conductive layer formation step S2, a through hole formation step S3, a catalyst application step S4, a film peeling step S5, and an electroless plating step S6.

[0036] The conductive layer forming step S2 is performed after the preparation step S1. The through hole forming step S3 is performed after the conductive layer forming step S2. The catalyst applying step S4 is performed after the through hole forming step S3. The film peeling step S5 is performed after the catalyst applying step S4. The electroless plating step S6 is performed after the film peeling step S5.

[0037] Fig. 3 is a cross-sectional view illustrating the preparation step S1. In the preparation step S1, as shown in Fig. 3, a base film 10 is prepared. In the base film 10 prepared in the preparation step S1, the first conductive layer 21 and the first electroless copper plating layer 31 are not disposed on the first main surface 10a, and the second conductive layer 22 and the second electroless copper plating layer 32 are not disposed on the second main surface 10b. In addition, the base film 10 prepared in the preparation step S1 does not have a through hole 10c formed therein.

[0038] 4 is a cross-sectional view illustrating the conductive layer forming step S2. In the conductive layer forming step S2, as shown in FIG. 4, the first conductive layer 21 and the second conductive layer 22 are formed on the first main surface 10a and the second main surface 10b, respectively. In the conductive layer forming step S2, first, a paste containing copper particles is applied onto the first main surface 10a and the second main surface 10b. Second, the solvent contained in the applied paste is dried. Third, the dried paste is fired. As a result, the copper particles contained in the dried paste are sintered to each other, and the first conductive layer 21 and the second conductive layer 22 are formed.

[0039] Although not shown in the figure, after the conductive layer formation process S2 is performed, a degreasing process and an acid pickling process are performed on the surface of the first conductive layer 21 (the surface of the first conductive layer 21 opposite the first main surface 10a) and the surface of the second conductive layer 22 (the surface of the second conductive layer 22 opposite the second main surface 10b).

[0040] Fig. 5 is a cross-sectional view illustrating the through hole forming step S3. In the through hole forming step S3, as shown in Fig. 5, a through hole 10c is formed in the base film 10. In the through hole forming step S3, first, a masking film 41 and a masking film 42 are disposed on the first conductive layer 21 and the second conductive layer 22, respectively.

[0041] Secondly, the base film 10, the first conductive layer 21, the second conductive layer 22, the masking film 41 and the masking film 42 are irradiated with a laser L. As a result, a through hole 10c is formed in the base film 10. As a result, a through hole 21a is formed in the first conductive layer 21 and a through hole 22a is formed in the second conductive layer 22. Furthermore, a through hole 41a and a through hole 42a are formed in the masking film 41 and the masking film 42, respectively.

[0042] Fig. 6 is a cross-sectional view illustrating the catalyst application step S4. As shown in Fig. 6, in the catalyst application step S4, a palladium catalyst 43 is applied to the inner wall surface of the through hole 10c, the inner wall surface of the through hole 21a, the inner wall surface of the through hole 22a, the inner wall surface of the through hole 41a, and the inner wall surface of the through hole 42a. The palladium catalyst 43 is also applied to the masking film 41 and the masking film 42.

[0043] 7 is a cross-sectional view illustrating the film peeling step S5. As shown in FIG 7, in the film peeling step S5, the masking film 41 is peeled off from the first conductive layer 21, and the masking film 42 is peeled off from the second conductive layer 22.

[0044] The electroless plating step S6 is performed using a plating apparatus 300. Fig. 8 is a schematic diagram of the plating apparatus 300 used in the electroless plating step S6. As shown in Fig. 8, the plating apparatus 300 has a plating tank 310, a plurality of rollers 320, electrode rollers 331 and 332, and a power source 340.

[0045] A plating solution is stored in the plating tank 310. The plating solution contains copper. The plating solution may also contain nickel. An electrode 311 is disposed inside the plating tank 310. The electrode 311 is made of a conductive material. The electrode 311 is made of titanium, for example. The electrode 311 is immersed in the plating solution.

[0046] The rollers 320 are arranged in a line along the transport direction (see the arrow in FIG. 8 ) of the base film 10. The base film 10 is transported along the transport direction by rotating the rollers 320. The base film 10 passes through a plating solution stored in a plating tank 310 during the transport process.

[0047] The electrode roller 331 and the electrode roller 332 are disposed at positions where they come into contact with the base film 10 before it passes through the plating solution. The electrode roller 331 and the electrode roller 332 are in contact with the first conductive layer 21 and the second conductive layer 22, respectively. The electrode roller 331 and the electrode roller 332 are made of, for example, stainless steel.

[0048] The power source 340 is electrically connected to the electrode 311 and the electrode rollers 331 and 332. More specifically, the positive pole of the power source 340 is electrically connected to the electrode 311, and the negative pole of the power source 340 is electrically connected to the electrode rollers 331 and 332.

[0049] The electroless plating process S6 has a first step S61 and a second step S62 performed after the first step S61. In the first step S61, a power source 340 applies electricity between the electrode 311 and the electrode rollers 331 and 332.

[0050] Fig. 9 is a cross-sectional view illustrating the first step S61. As shown in Fig. 9, driven by the electrical energy accompanying this energization, a first electroless copper plating layer 31 and a second electroless copper plating layer 32 are rapidly formed on the surfaces of the first conductive layer 21 and the second conductive layer 22, respectively.

[0051] Fig. 10 is a cross-sectional view illustrating the second step S62. In the second step S62, the passage of current between the electrode 311 and the electrode rollers 331 and 332 is stopped. However, since the first electroless copper plating layer 31 and the second electroless copper plating layer 32 have been formed in the first step S61, the growth of the first electroless copper plating layer 31 and the second electroless copper plating layer 32 continues due to the autocatalytic action of copper, as shown in Fig. 10, without using the palladium catalyst 43.

[0052] As described above, the palladium catalyst 43 is applied to the inner wall surface of the through hole 10c, the inner wall surface of the through hole 21a, and the inner wall surface of the through hole 22a. Therefore, as shown in Fig. 9 and Fig. 10, in the first step S61 and the second step S62, the third electroless copper plating layer 33 is grown on the inner wall surface of the through hole 10c, the inner wall surface of the through hole 21a, and the inner wall surface of the through hole 22a, driven by the palladium catalyst 43.

[0053] In this manner, the printed wiring board substrate 100 having the structure shown in Fig. 1 is manufactured. Although not shown, annealing may be performed after the electroless plating step S6.

[0054] (Configuration of printed wiring board 200) The configuration of the printed wiring board 200 will be described below.

[0055] 11 is a cross-sectional view of a printed wiring board 200. As shown in FIG.

[0056] The normal direction of the first main surface 10a (second main surface 10b) is defined as a first direction DR1. The direction perpendicular to the first direction DR1 is defined as a second direction DR2. The direction perpendicular to the first direction DR1 and the second direction DR2 is defined as a third direction DR3.

[0057] The first wiring 51 is disposed on the first main surface 10a. The first wiring 51 has a first conductive layer 21 disposed on the first main surface 10a, a first electroless copper plating layer 31 disposed on the first conductive layer 21, and a first electrolytic copper plating layer 61 disposed on the first electroless copper plating layer 31. The first electrolytic copper plating layer 61 is a copper layer formed by electrolytic plating.

[0058] The second wiring 52 is disposed on the second main surface 10b. The second wiring 52 has a second conductive layer 22 disposed on the second main surface 10b, a second electroless copper plating layer 32 disposed on the second conductive layer 22, and a second electrolytic copper plating layer 62 disposed on the second electroless copper plating layer 32. The second electrolytic copper plating layer 62 is a copper layer formed by electrolytic plating.

[0059] Printed wiring board 200 further has a third electrolytic copper plating layer 63. Third electrolytic copper plating layer 63 is disposed on third electroless copper plating layer 33. First wiring 51 and second wiring 52 are electrically connected to each other by third electroless copper plating layer 33 and third electrolytic copper plating layer 63.

[0060] The first wiring 51 has a plurality of wiring portions 51a. The wiring portions 51a extend along the second direction DR2. The plurality of wiring portions 51a are arranged in a line along the third direction DR3. The distance in the third direction DR3 between two adjacent ones of the plurality of wiring portions 51a is defined as a distance DIS1. The distance DIS1 may be 20 μm or less. The distance DIS1 may be 10 μm or less.

[0061] The second wiring 52 has a plurality of wiring portions 52a. The wiring portions 52a extend along the second direction DR2. The plurality of wiring portions 52a are arranged in a line along the third direction DR3. The distance in the third direction DR3 between two adjacent ones of the plurality of wiring portions 52a is defined as a distance DIS2. The distance DIS2 may be 20 μm or less. The distance DIS2 may be 10 μm or less.

[0062] (Method of Manufacturing Printed Wiring Board 200) A method for manufacturing the printed wiring board 200 will now be described.

[0063] Fig. 12 is a manufacturing process diagram of printed wiring board 200. As shown in Fig. 12, the manufacturing method of printed wiring board 200 includes a resist pattern forming step S7, an electrolytic plating step S8, a resist pattern removing step S9, and an etching step S10.

[0064] The electrolytic plating step S8 is performed after the resist pattern forming step S7. The resist pattern removing step S9 is performed after the electrolytic plating step S8. The etching step S10 is performed after the resist pattern removing step S9. The printed wiring board 200 is formed using the substrate 100 for the printed wiring board.

[0065] 13 is a cross-sectional view illustrating the resist pattern forming step S7. In the resist pattern forming step S7, as shown in FIG 13, a resist pattern 71 and a resist pattern 72 are formed on the first electroless copper plating layer 31 and the second electroless copper plating layer 32, respectively.

[0066] The resist pattern 71 has openings 71a. The openings 71a penetrate the resist pattern 71 in the thickness direction. The first electroless copper plating layer 31 is exposed from the openings 71a. The resist pattern 72 has openings 72a. The openings 72a penetrate the resist pattern 72 in the thickness direction. The second electroless copper plating layer 32 is exposed from the openings 72a.

[0067] The first electroless copper plating layer 31 around the through hole 10c is exposed from the opening 71a, and the second electroless copper plating layer 32 around the through hole 10c is exposed from the opening 72a.

[0068] In the resist pattern formation step S7, first, a resist is applied onto the first electroless copper plating layer 31 and the second electroless copper plating layer 32. Second, the applied resist is exposed and developed. As a result, the remaining parts of the resist that were not removed become the resist patterns 71 and 72, and the removed parts of the resist become the openings 71a and 72a.

[0069] Fig. 14 is a cross-sectional view illustrating the electrolytic plating step S8. In the electrolytic plating step S8, as shown in Fig. 14, a first electrolytic copper plating layer 61 is formed on the first electroless copper plating layer 31 exposed from the opening 71a, and a second electrolytic copper plating layer 62 is formed on the second electroless copper plating layer 32 exposed from the opening 72a. In the electrolytic plating step S8, a third electrolytic copper plating layer 63 is formed on the third electroless copper plating layer 33. The first electrolytic copper plating layer 61, the second electrolytic copper plating layer 62, and the third electrolytic copper plating layer 63 are formed by electrolytic plating by passing current through the first electroless copper plating layer 31, the second electroless copper plating layer 32, and the third electroless copper plating layer 33 in a plating solution containing copper.

[0070] Fig. 15 is a cross-sectional view illustrating the resist pattern removing step S9. In the resist pattern removing step S9, as shown in Fig. 15, the resist pattern 71 is removed from the first electroless copper plating layer 31, and the resist pattern 72 is removed from the second electroless copper plating layer 32. As a result, the first electroless copper plating layer 31 and the first conductive layer 21 are exposed between the two adjacent first electroless copper plating layers 61, and the second electroless copper plating layer 32 and the second conductive layer 22 are exposed between the two adjacent second electroless copper plating layers 62.

[0071] In the etching step S10, the portions of the first electroless copper plating layer 31 and the first conductive layer 21 exposed between two adjacent first electrolytic copper plating layers 61, and the portions of the second electroless copper plating layer 32 and the second conductive layer 22 exposed between two adjacent second electrolytic copper plating layers 62 are removed by etching. In this manner, a printed wiring board 200 having the structure shown in FIG.

[0072] (Effects of the printed wiring board substrate 100 and the printed wiring board 200) The effects of the printed wiring board substrate 100 and the printed wiring board 200 will be described below.

[0073] In substrate 100 for printed wiring board, the amount of palladium in base film 10 on the inner wall surface of through hole 10c is large. That is, in substrate 100 for printed wiring board, third electroless copper plating layer 33 is formed using palladium catalyst 43. Therefore, in printed wiring board 200 formed using substrate 100 for printed wiring board, the reliability of conduction between first wiring 51 and second wiring 52 is ensured.

[0074] In the manufacturing process of the substrate 100 for printed wiring boards, when the catalyst application process S4 is performed, a masking film 41 is placed on the first conductive layer 21 and a masking film 42 is placed on the second conductive layer 22, so that the palladium catalyst 43 is not applied to the surface of the first conductive layer 21 and the surface of the second conductive layer 22.

[0075] In the manufacturing process of the printed wiring board substrate 100, a current is applied between the electrode 311 and the electrode rollers 331 and 332 at the beginning of the electroless plating step S6, whereby the first electroless copper plating layer 31 and the second electroless copper plating layer 32 are rapidly formed on the first conductive layer 21 and the second conductive layer 22, respectively. As a result, the penetration of the plating solution into the first conductive layer 21 and the second conductive layer 22 is suppressed.

[0076] Therefore, in the substrate 100 for printed wiring boards, the amount of palladium in the base film 10 on the first main surface 10a and the second main surface 10b is less than the amount of palladium in the base film 10 on the inner wall surfaces of the through holes 10c.

[0077] The first electroless copper plating layer 31 and the second electroless copper plating layer 32 are grown on the first conductive layer 21 and the second conductive layer 22, respectively. Furthermore, in the first step S61, the first electroless copper plating layer 31 and the second electroless copper plating layer 32 are grown rapidly on the surface of the first conductive layer 21 and the surface of the second conductive layer 22, respectively. Therefore, nickel in the plating solution is unlikely to reach the first conductive layer 21 and the first main surface 10a thereunder, and the second conductive layer 22 and the second main surface 10b thereunder.

[0078] On the other hand, the inner wall surface of the through hole 10c comes into contact with the plating solution. Also, the third electroless copper plating layer 33 on the inner wall surface of the through hole 10c is not an electroless copper plating layer that grows rapidly driven by electrical energy generated by current flow, but an electroless copper plating layer that grows driven by the palladium catalyst 43. Therefore, the amount of nickel in the base film 10 on the first main surface 10a and the second main surface 10b is less than the amount of nickel in the base film 10 on the inner wall surface of the through hole 10c.

[0079] If the amount of palladium or nickel in the base film 10 on the first main surface 10a and the second main surface 10b is large, the palladium or nickel in the base film 10 that is exposed between two adjacent first electrolytic copper plating layers 61 and between two adjacent second electrolytic copper plating layers 62 must also be removed in the etching process S10.

[0080] At this time, undercuts may occur in the first wiring 51 and the second wiring 52, making it difficult to achieve a fine pitch for the first wiring 51 and the second wiring 52 if the amount of palladium in the base film 10 on the first main surface 10a and the second main surface 10b is large.

[0081] However, since the printed wiring board 200 is formed using the substrate 100 for printed wiring boards in which the amount of palladium in the base film 10 on the first main surface 10a and the second main surface 10b is small, undercutting of the first wiring 51 and the second wiring 52 is unlikely to occur during the etching step S10, and the first wiring 51 and the second wiring 52 can be fine-pitched. The undercutting of the first wiring 51 refers to a cutout that occurs between the first electroless copper plating layer 31 and the first electrolytic copper plating layer 61 on the side surface of the first wiring 51. Similarly, the undercutting of the second wiring 52 refers to a cutout that occurs between the second electroless copper plating layer 32 and the second electrolytic copper plating layer 62 on the side surface of the second wiring 52.

[0082] In this way, according to the printed wiring board 200 formed using the substrate 100 for printed wiring board, it is possible to achieve fine pitch for the first wiring 51 and the second wiring 52 while ensuring the reliability of conductivity between the first wiring 51 and the second wiring 52.

[0083] <Evaluation of fine-pitch wiring> Using Samples 1 to 7, the effect of the amount of palladium on the main surface of the base film 10 and the inner wall surface of the through hole of the base film 10 on finer pitch wiring was evaluated. In Samples 1 to 7, the amount of palladium in the base film 10 on the first main surface 10a was changed. In Samples 1 to 7, the amount of palladium in the first conductive layer 21 and the amount of palladium in the first electroless copper plating layer 31 were also changed.

[0084] [Table 1]

[0085] A first evaluation TEG (Test Element Group) was used to evaluate the fine pitch of the wiring. FIG. 16 is a plan view of the first evaluation TEG. As shown in FIG. 16, the first evaluation TEG has a base film 10 and a first wiring 51. In the first evaluation TEG, a first main surface 10a has 20 wiring formation regions R1, 20 wiring formation regions R2, and 20 wiring formation regions R3. The 20 wiring formation regions R1, the 20 wiring formation regions R2, and the 20 wiring formation regions R3 are arranged in a row along the left-right direction.

[0086] A first wiring 51 having a plurality of wiring portions 51a is formed on the wiring formation regions R1, R2, and R3. The wiring portions 51a formed on the wiring formation region R1 extend in the vertical direction. The wiring portions 51a formed on the wiring formation region R2 and the wiring portions 51a formed on the wiring formation region R3 extend in directions inclined at 45° and −45° with respect to the vertical direction, respectively.

[0087] The L / S of the wiring portion 51a formed on the nth wiring formation region R1 from the right (n is a natural number less than 20) is n μm / n μm. L is the width of the wiring portion 51a, and S is the distance DIS1. The L / S of the wiring portion 51a formed on the wiring formation region R2 and the wiring portion 51a formed on the wiring formation region R3 is similarly changed. The aspect ratio of the wiring portion 51a (the height of the wiring portion 51a divided by the width of the wiring portion 51a) is set to 1 or more and 2 or less.

[0088] For each of the 20 wiring formation regions R1, each of the 20 wiring formation regions R2, and each of the 20 wiring formation regions R3, the first wiring 51 was observed using a SEM (Scanning Electron Microscope) to determine whether the wiring formation had been performed properly.

[0089] When the minimum value of the width and distance DIS1 of the wiring portion 51a that can be appropriately formed is 10 μm or less, the evaluation was given as A. When the minimum value of the width and distance DIS1 of the wiring portion 51a that can be appropriately formed is more than 10 μm and less than 20 μm, the evaluation was given as B. When the minimum value of the width and distance DIS1 of the wiring portion 51a that can be appropriately formed is more than 20 μm and less than 30 μm, the evaluation was given as C. When the minimum value of the width and distance DIS1 of the wiring portion 51a that can be appropriately formed is more than 30 μm, the evaluation was given as D.

[0090] As shown in Table 1, when the amount of palladium in the base film 10 on the first principal surface 10a was 0.02 atomic percent or less, the fine pitch was evaluated as B or higher. On the other hand, when the amount of palladium in the base film 10 on the first principal surface 10a was more than 0.02 atomic percent, the fine pitch was evaluated as C or lower.

[0091] <Evaluation of wiring continuity reliability> Using Samples 8 to 14, the amount of palladium on the inner wall surface of the through hole of the base film 10 was Conduction reliability In Samples 8 to 14, as shown in Table 2, the amount of palladium in the base film 10 on the inner wall surface of the through hole 10c was changed.

[0092] [Table 2]

[0093] A second evaluation TEG was used to evaluate the electrical continuity reliability of the wiring. Fig. 17 is a plan view of the second evaluation TEG. Fig. 18 is a cross-sectional view taken along line XVIII-XVIII in Fig. 17. As shown in Figs. 16 and 17, the second evaluation TEG has a base film 10, a first wiring 51, a second wiring 52, a third electroless copper plating layer 33, and a third electrolytic copper plating layer 63.

[0094] In the second evaluation TEG, 10,000 through holes 10c are arranged in a row, and 10,000 daisy chains are formed by the first wiring 51, the second wiring 52, the third electroless copper plating layer 33 and the third electrolytic copper plating layer 63.

[0095] The second evaluation TEG was prepared 1000 pieces for each sample. The resistivity of 10 million daisy chains for each sample was measured, and the resistivity was 1×10 -5 The percentage of through holes 10c with a resistance of Ω·m or more (continuity defect rate) was calculated. If the continuity defect rate was less than 0.5 ppm, it was given an evaluation of A. If the continuity defect rate was more than 0.5 ppm and 1 ppm or less, it was given an evaluation of B. If the continuity defect rate was more than 1 ppm and 10 ppm or less, it was given an evaluation of C. If the continuity defect rate was more than 10 ppm and 100 ppm or less, it was given an evaluation of D. If the continuity defect rate was 100 ppm or more, it was given an evaluation of E.

[0096] As shown in Table 2, when the amount of palladium on the inner wall surface of through hole 10c was 0.06 atomic percent or more, the evaluation was B or higher. On the other hand, when the amount of palladium on the inner wall surface of through hole 10c was less than 0.06 atomic percent, the evaluation was D or lower.

[0097] <Overall rating> From the above, if the amount of palladium in the base film 10 on the first main surface 10a and the second main surface 10b is 0.02 atomic percent or less and the amount of palladium in the base film 10 on the inner wall surface of the through hole 10c is 0.06 atomic percent or more, it is possible to achieve a fine pitch for the first wiring 51 and the second wiring 52 while ensuring the reliability of conductivity between the first wiring 51 and the second wiring 52.

[0098] When the first electroless copper plating layer 31, the second electroless copper plating layer 32, and the third electroless copper plating layer 33 are formed by an electroless plating method using a palladium catalyst 43, the amount of palladium in the base film 10 on the first principal surface 10a and the second principal surface 10b becomes approximately the same as the amount of palladium in the base film 10 on the inner wall surface of the through hole 10c. Therefore, when the first electroless copper plating layer 31, the second electroless copper plating layer 32, and the third electroless copper plating layer 33 are formed by such a method, it is not possible to achieve a fine pitch for the first wiring 51 and the second wiring 52 while ensuring the reliability of conduction between the first wiring 51 and the second wiring 52.

[0099] However, in the substrate 100 for printed wiring boards, the third electroless copper plating layer 33 is formed by an electroless plating method using a palladium catalyst 43, while the first electroless copper plating layer 31 and the second electroless copper plating layer 32 are formed by an electroless plating method utilizing electrical conduction without using a palladium catalyst 43. Therefore, in the substrate 100 for printed wiring boards, it is possible to make the amount of palladium in the base film 10 on the first main surface 10a and the second main surface 10b less than the amount of palladium in the base film 10 on the inner wall surface of the through hole 10c, and it is possible to achieve a fine pitch for the first wiring 51 and the second wiring 52 while ensuring the reliability of conduction between the first wiring 51 and the second wiring 52.

[0100] The embodiments disclosed herein are illustrative in all respects and should not be considered as limiting. The scope of the present invention is defined by the claims, not by the above-described embodiments, and is intended to include all modifications within the scope and meaning equivalent to the claims. [Explanation of symbols]

[0101] 100 Substrate for printed wiring board, 200 Printed wiring board, 10 Base film, 10a First main surface, 10b Second main surface, 10c Through hole, 21 First conductive layer, 21a Through hole, 22 Second conductive layer, 22a Through hole, 31 First electroless copper plating layer, 32 Second electroless copper plating layer, 33 Third electroless copper plating layer, 41, 42 Masking film, 41a Through hole, 42a Through hole, 43 Palladium catalyst, 51 First wiring, 51a Wiring portion, 52 Second wiring, 52a Wiring portion, 61 First electrolytic copper plating layer, 62 Second electrolytic copper plating layer, 63 Third electrolytic copper plating layer, 71 Resist pattern, 71a Opening, 72 Resist pattern, 72a Opening, 300 Plating device, 310 Plating tank, 311 Electrode, 320 roller, 331, 332 electrode roller, 340 power supply, DIS1, DIS2 distance, DR1 first direction, DR2 second direction, DR3 third direction, L laser, R1 wiring formation area, R2 wiring formation area, R3 wiring formation area, S1 preparation step, S2 conductive layer formation step, S3 through hole formation step, S4 catalyst application step, S5 film peeling step, S6 electroless plating step, S61 first step, S62 second step, S7 resist pattern formation step, S8 electrolytic plating step, S9 resist pattern removal step, S10 etching step.

Claims

1. A base film having a first major surface and a second major surface; a first conductive layer disposed on the first major surface; a second conductive layer disposed on the second major surface; A first electroless copper plating layer; A second electroless copper plating layer; and a third electroless copper plating layer; The base film has a through hole formed therein, the through hole passing through the base film in a thickness direction, the first electroless copper plating layer is disposed on all of the first conductive layers; the second electroless copper plating layer is disposed on all of the second conductive layers; the third electroless copper plating layer is disposed on an inner wall surface of the through hole, an amount of palladium in the base film on the first principal surface and the second principal surface is less than an amount of palladium in the base film on the inner wall surface; The substrate for a printed wiring board, wherein the first conductive layer and the second conductive layer are layers containing a plurality of sintered copper particles.

2. an amount of palladium in the base film at the first principal surface and the second principal surface is 0.02 atomic percent or less; 2. The substrate for printed wiring board according to claim 1, wherein the amount of palladium in the base film on the inner wall surface is 0.06 atomic percent or more.

3. an amount of palladium in the base film at the first principal surface and the second principal surface is 0.008 atomic percent or less; 2. The substrate for printed wiring board according to claim 1, wherein the amount of palladium in the base film on the inner wall surface is 0.07 atomic percent or more.

4. 2. The substrate for printed wiring board according to claim 1, wherein the amount of palladium in the first conductive layer and the second conductive layer is 0.08 atomic percent or less.

5. 5. The substrate for printed wiring board according to claim 1, wherein the amount of palladium in the first electroless copper plating layer and the second electroless copper plating layer is 0.07 atomic percent or less.

6. 2. The substrate for printed wiring board according to claim 1, wherein an amount of nickel in said base film on said first main surface and said second main surface is less than an amount of nickel in said base film on said inner wall surface.

7. A base film having a first major surface and a second major surface; a first wiring including a first conductive layer disposed on the first main surface, a first electroless copper plating layer disposed on the first conductive layer, and a first electrolytic copper plating layer disposed on the first electroless copper plating layer; a second conductive layer disposed on the second main surface; a second electroless copper plating layer disposed on the second conductive layer; and a second electrolytic copper plating layer disposed on the second electroless copper plating layer. a second wiring having a layer; A third electroless copper plating layer; and a third electrolytic copper plating layer; The base film has a through hole formed therein, the through hole passing through the base film in a thickness direction, the first electroless copper plating layer is disposed on all of the first conductive layers; the second electroless copper plating layer is disposed on all of the second conductive layers; the third electroless copper plating layer is disposed on an inner wall surface of the through hole, the third electrolytic copper plating layer is disposed on the third electroless copper plating layer; the first wiring is electrically connected to the second wiring by the third electroless copper plating layer and the third electrolytic copper plating layer; an amount of palladium in the base film on the first principal surface and the second principal surface is less than an amount of palladium in the base film on the inner wall surface; The printed wiring board, wherein the first conductive layer and the second conductive layer are layers containing a plurality of sintered copper particles.

8. 8. The printed wiring board according to claim 7, wherein the distance between two adjacent portions of the first wiring and the distance between two adjacent portions of the second wiring are 20 μm or less.

Images