Carbon-doped yttrium oxyfluoride (C:YOF) layers as protective layers in fluorine plasma etching processes

Abstract

The present invention relates to an article comprising a substrate and a protective film covering at least a portion of the substrate, the film comprising a fluorinated metal oxide containing one or more elements from Group III and / or Group IV of the Periodic Table of the Elements, the fluorinated metal oxide in the protective film being doped with carbon having a carbon concentration of 0.1 at% to 10 at% inclusive, preferably 0.5 at% or more, more preferably 2.5 at% or less, and the article is a component and / or part of a plasma etch chamber, preferably an article from the group consisting of an electrostatic chuck, a ring, a process kit ring, a single ring, a chamber wall, a showerhead, a nozzle, a lid, a liner, a window, a baffle, or a fastener.

Description

[Background technology]

[0001] Halogen-containing plasmas (fluorine, chlorine, bromide, iodine) are widely used in the semiconductor industry to etch silicon wafers. However, halogen-containing plasmas also bombard and attack the parts and components of the plasma etch chamber, while the generated particles can contaminate the wafers, causing reduced device yields and shortened life spans of the plasma etch chamber parts and components, which ultimately leads to increased process downtime and increased costs of semiconductor device manufacturing.

[0002] To protect devices from erosion, corrosion and the formation of contaminants, many oxide ceramics, such as Al2O3, AlON or Y2O3, are used as plasma etch component protection materials and coatings. One of the traditional plasma resistant ceramics is yttria (Y2O3), which has shown longer chamber life under plasma in both metal etching and dielectric silicon-based etching applications due to its higher plasma erosion and corrosion resistance compared to other oxide-based ceramics.

[0003] However, when Y2O3 is used as an etching protection layer in a fluorine-containing plasma, it has been reported that the fluorine plasma reacts with the Y2O3 layer to form a degenerate YF surface layer, which has a tendency to flake off and generate particles that cause surface contamination of the wafer being etched, which ultimately leads to reduced manufacturing yields and makes it extremely difficult to achieve a high level of process repeatability for integrated circuits.

[0004] Kazuhiro et al in J. Vac. Sci. A 27(4), Jul / Aug 2009 describe the formation of YOF, which occurs in four steps. According to the first step, a fluorocarbon film is formed on the Y2O3 surface. According to the second step, the carbon of the fluorocarbon film reacts with the oxygen of Y2O3 to form volatile CO, which breaks down the YO bond. According to the third step, the yttrium of the broken YO bond reacts with the fluorine of the fluorocarbon film, which forms YOxFy and / or YFx bonds.

[0005] To avoid this problem, the prior art proposes to prevent the third step by depositing an etching-resistant yttrium oxyfluoride YOF (YxOyFz) coating, which acts as a protective layer to prevent the coating surface from being further eroded by the fluorine plasma and particle generation. However, despite being chemically inert with respect to F, YOF coatings can also be subject to degradation due to the deposition of fluorocarbon polymer layers due to the adsorption of fluorocarbon radicals on the YOF surface. These layers, among other drawbacks, can affect the etching process and produce large uncontrolled shifts.

[0006] Therefore, there is a need for improved coatings that have excellent plasma etch resistance and provide a high level of process stability and reproducibility in the manufacture of integrated circuits. Often, seasoning and conditioning are used to improve such stability and reproducibility. However, this can be time consuming and can significantly increase manufacturing costs. Summary of the Invention [Problem to be solved by the invention]

[0007] The present invention aims to solve the above problems and to provide an improved coating for process chamber parts that has excellent plasma etch resistance and provides a high level of process stability and repeatability for fluorine plasma-based etch processes in the manufacture of semiconductor devices. It is also an object of the present invention to provide a method for producing such an improved coating. [Means for solving the problem]

[0008] According to the invention this problem is solved by an article according to independent claim 1, which may preferably be formed as a vacuum compatible plasma etching chamber article comprising a vacuum compatible substrate. The dependent claims describe further and preferred embodiments of the invention.

[0009] In accordance with the present invention, the article includes an improved coating, which may be formed as a thin film including a fluorinated metal oxide, the thin film further including carbon at a concentration within the range of 0.1 at% to 10 at%, preferably between 0.5 at% and 2.5 at%. The metal of the fluorinated metal oxide may be one or more elements of Group III and / or Group IV of the periodic table. More preferably, the metal may include or be yttrium.

[0010] According to another example, the protective film may include a gradient layer having an increasing fluorine concentration measured from a deeper portion of the protective film to a shallower portion of the protective film, and / or the protective film may be a multi-layer system including at least two layers having different fluorine concentrations, the fluorine concentration of the layer further from the substrate being higher than the fluorine concentration of the layer closer to the substrate.

[0011] According to a preferred embodiment of the present invention, the thin film is a MaObFcCd film. When only these materials in this film are considered, 0.25 < a < 0.4, 0.2 < b < 0.6, 0.1 < c < 0.6, and 0.01 < d < 0.1, and a + b + c + d = 1. This means that additional materials may also be present in the film. However, the concentration of each of the additional materials preferably does not exceed 5 at%. Most preferably, no additional materials other than those materials for which contamination avoidance is difficult are present in the film.

[0012] According to another aspect of the present invention, a method for manufacturing an article according to the present invention is disclosed, and the protective film covering at least a part of the substrate is provided by physical vapor deposition (PVD) and / or chemical vapor deposition (CVD). The film of the present invention is applied to chamber components / components used in semiconductor manufacturing apparatuses in physical vapor deposition (PVD) and / or chemical vapor deposition (CVD) such as plasma CVD, for example. The film of the present invention is most suitable for application to components of aluminum and / or aluminum oxide and / or anodized aluminum and / or pre-coated aluminum and / or pre-coated anodized aluminum. One example is depositing a sprayed Y2O3 pre-coat layer on anodized aluminum. Other substrates such as quartz are also possible.

[0013] The film of the present invention may include or may be a gradient layer starting from a pure metal oxide (Me-O) on the substrate to Me-O-F-C as the top layer. The film may preferably be a two-layer or multi-layer system in which the F and / or C concentration increases in the direction towards the surface.

[0014] The membranes of the invention may comprise one or more metal and / or metal oxide layers as a means of adhesion promotion to the substrate. Preferably, the membranes of the invention have a hardness of at least 10 GPa, as determined by nanoindentation. Preferably, the membranes of the invention have a thickness between 0.1 μm and 30 μm. According to one embodiment, the membranes of the invention have an amorphous phase, whereas according to a preferred embodiment, the membranes of the invention have a crystalline phase, for example trigonal and / or orthorhombic and / or preferably rhombohedral, as determined by x-ray diffraction. According to a preferred embodiment, the membranes of the invention have a roughness of Ra<1 μm, preferably Ra<0.25 μm, most preferably Ra<0.025 μm. According to a preferred embodiment, the membranes of the invention have a reduced peak height of Rpk<0.25 μm, preferably Rpk<0.10 μm, most preferably Rpk<0.025 μm.

[0015] The film of the invention can be produced, for example, by a plasma deposition (PVD) process, preferably a reactive sputtering process, such as pulsed DC and / or HiPIMS and / or bipolar HiPIMS and / or modulated pulsed power magnetron sputtering (MPPS). If a reactive process is used, the reactive gas can be, for example, a mixture of a CF-containing gas (CF4, C2F6, C3F8, etc.) and an oxygen-containing gas (O2, etc.). The target can be a pure metal target. However, it can also be, for example, a ceramic target, such as an oxide, preferably Y2O3 and / or a fluoride, preferably YF3, or a mixture thereof. PVD processes are particularly suitable, since, compared to existing techniques (thermal spraying, aerosol deposition), the inherent density and lack of porosity of PVD films contributes particularly positively to the reduction of particle formation.

[0016] It may be advantageous to use a substrate bias that is floating and / or DC and / or pulsed DC and / or bipolar and / or RF. It may be advantageous to use a Y-containing thermal spray pre-coat, such as, but not limited to, a Y2O3 and / or YOF layer.

[0017] Examples of applications are chamber components including, but not limited to, electrostatic chucks (ESCs), rings (eg, process kit rings or single rings), chamber walls, showerheads, nozzles, lids, liners, windows, baffles, and fasteners.

[0018] Preferably, the substrate temperature during coating is kept below 180° C., and most preferably below 150° C. Note that higher deposition rates can be achieved at higher temperatures, but sometimes substrates have temperature limitations.

[0019] The present invention will now be described in detail with reference to the accompanying drawings based on embodiments. [Brief description of the drawings]

[0020] [Figure 1] FIG. 1 shows the material composition of films resulting from two coating runs. [Diagram 2] FIG. 1 shows different roughness values ​​of films coated on alumina, aluminum and silicon. [Figure 3a] FIG. 1 shows an SEM of a cross section of a sample. [Figure 3b] FIG. 1 shows an SEM of a portion of the surface of a sample. [Figure 4] FIG. 1 shows the measured hardness and modulus of films obtained from two coating runs. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] In the first coating run, aluminum and alumina (4 μ" Ra) and silicon substrates were solvent cleaned and loaded onto a two-axis rotating planetary system in a stainless steel deposition system. Argon plasma etching of the substrates was performed using a DC filament discharge and a pulsed DC substrate bias.

[0022] The chamber was evacuated to less than 1E-2 mbar and an argon flow was developed that was adjusted to 160 sccm. A pulsed DC power was then delivered to the balanced planar yttrium target, starting at a power setting of 50% and then ramped to 6 kW. The reactive gases O2 and CF4 were then used to deposit the C-doped yttrium oxyfluoride (YOFC) coating. The ratio of CF4 to O2 was set to a ratio of 30:70. The reactive gases were then slowly adjusted at this set ratio over a period of 5 minutes such that the cathode voltage steadily decreased from 565 V (pure metal film) to a final set point of 380 V (fully oxyfluoride doped carbon film). At this point, the CF4 / O2 ratio is still fixed. Fine adjustments in the gas flow maintain the operating voltage set point on the sputtering cathode for the duration of the deposition. The conditions are thereby kept constant until the desired thickness of 2 μm for the YOF functional top layer of the coating is reached.

[0023] A second coating run was performed in which all parameters were identical to the first coating run, except for the ratio of CF4 to O2, which was set at a ratio of 10:90.

[0024] Figure 1 shows the coating composition obtained for both coating runs, as determined by ERDA / RBS analysis. The coating composition is given in atomic ratio at%. The detection limit is less than 0.1 at%. It can be seen that the C concentration is 1.2 at% in both coatings. In contrast, with an increase in the CF4 / O2 ratio, the oxygen concentration decreases and the fluorine concentration increases.

[0025] XRD measurements revealed a rhombohedral crystal structure of the coating. These roughness measurements were made using a stylus profilometer. The results are shown in Figure 2. The films of the present invention appear to provide very low roughness values ​​that may help reduce flaking effects. Also noteworthy are the low Rpk (prominent peak height) values. The coating surface does not provide a shape with unusual peaks, but rather resembles an undulating landscape. This can also be seen in the SEM photograph of Figure 3b, taken as a top view. Figure 3a shows the SEM of a cross-section of one of the samples.

[0026] We performed hardness measurements on the samples as well, which were performed with a UNAT instrument (Universal Nanomechanical Tester). Hardness may at least indirectly play a role, since harder films typically have a higher density and are therefore less susceptible to etching. The films were indented 45 times with a fixed load of 5 mN, keeping the indentation depth below 10% of the film thickness (Oliver-Pharr rule). Figure 4 shows the respective measurements.

[0027] The hardness and modulus were found to be in the same range when compared to prior art Y2O3 films taken for reference.

Claims

1. An article, the article comprising: A substrate; and a protective film covering at least a portion of the substrate, the film comprising a fluorinated metal oxide comprising one or more elements from Group III and / or Group IV of the Periodic Table of Elements, the fluorinated metal oxide in the protective film being doped with carbon to have a carbon concentration of 0.1 at% to 10 at%, a coating thickness of the protective film being 0.1 μm to 30 μm, and the article being a component and / or part of a plasma etch chamber.

2. The article of claim 1 , wherein the metal of the overcoat comprises yttrium.

3. 3. An article according to claim 1 or 2, characterized in that the protective coating has a roughness of Ra<1 μm.

4. 4. The article of claim 1, wherein the protective coating has a peak height of Rpk<0.25 μm.

5. 5. The article of claim 1, wherein the protective coating has a hardness of at least 10 GPa as determined by nanoindentation with a fixed load of 5 mN and an indentation depth kept below 10% of the coating thickness.

6. 6. The article of claim 1, further comprising an adhesion promoting layer between the protective film and the substrate, the adhesion promoting layer being a second metal or a second metal oxide.

7. The article of claim 6, wherein the metal of the film and the second metal are the same.

8. 8. The article of claim 1, wherein the protective coating comprises a gradient layer having an increasing fluorine concentration measured from a deeper portion of the protective coating to a shallower portion of the protective coating, and / or the protective coating is a multilayer system including at least two layers having different fluorine concentrations, the fluorine concentration of a layer further from the substrate being higher than the fluorine concentration of a layer closer to the substrate.

9. 9. The article of claim 1, wherein the protective coating comprises a gradient layer starting near the substrate from pure M2O3 to (MaObFcCd), where the concentration of MaObFcCd is selected from 0.25<a<0.4, 0.2<b<0.6, 0.1<c<0.6, and 0.01<d<0.1, where a+b+c+d=1, and M is the metal.

10. 10. The article according to any one of claims 1 to 9, characterized in that between the protective film or adhesion promoting layer, if any, and the substrate there may be a Y-containing thermal spray precoat comprising Y2O3 and / or YOF.

11. Method for manufacturing an article according to any one of claims 1 to 10, characterized in that the protective film covering at least a part of the substrate is applied by physical vapor deposition (PVD) and / or chemical vapor deposition (CVD).

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