Method for restoring light-emitting element and display panel including restored light-emitting element

Abstract

A method for restoring a light-emitting element according to one embodiment includes removing a defective light-emitting element from a plurality of light-emitting elements transferred onto a circuit board; manufacturing a restoration light-emitting element on the board; forming a bonding material layer on the restoration light-emitting element; and bonding the restoration light-emitting element to the position where the defective light-emitting element was removed using the bonding material layer.

Description

[Technical field]

[0001] The embodiments relate to a method for restoring a light-emitting element, a display panel including a light-emitting element restored using the method, and a display device including the same. In particular, the embodiments relate to a method for restoring a micro LED. [Background technology]

[0002] Light emitting diodes, as inorganic light sources, are used in a variety of fields such as display devices, vehicle lamps, general lighting, etc. Light emitting diodes have advantages such as a long life, low power consumption, and fast response speed, and are rapidly replacing existing light sources.

[0003] Meanwhile, conventional light emitting diodes have been mainly used as backlight sources in display devices, but in recent years, LED displays that directly display images using small light emitting diodes, or micro LEDs, have been developed.

[0004] A display device generally realizes various colors using a mixture of blue, green, and red colors. The display device includes a plurality of pixels to realize various images, and each pixel includes blue, green, and red sub-pixels, and the color of a particular pixel is determined by the colors of these sub-pixels, and an image is realized by a combination of these pixels.

[0005] LEDs can emit light of various colors depending on the material, and a display device can be provided by arranging individual micro LEDs emitting blue, green, and red lights on a two-dimensional plane, or by arranging micro LEDs with a stacked structure in which blue LEDs, green LEDs, and red LEDs are stacked on a two-dimensional plane.

[0006] Even for small displays, one display device usually requires more than a million micro LEDs. Due to the small size of micro LEDs and the huge number required, mass production of micro LED display devices is almost impossible using conventional die bonding technology that individually mounts LED chips. For this reason, technology has been developed in recent years to transfer a large number of micro LEDs to a circuit board or the like in a group.

[0007] Meanwhile, some of the micro LEDs transferred in a group may show bonding failure or poor light emitting properties, and such defective micro LEDs require restoration. Restoration of micro LEDs generally involves replacing the defective micro LEDs with good micro LEDs, but restoring micro LEDs is very difficult because micro LEDs are small and cannot be individually picked up and mounted. Summary of the Invention [Problem to be solved by the invention]

[0008] The problem to be solved by the embodiments is to provide a new technology capable of restoring a light-emitting element for a display, in particular, a micro LED. [Means for solving the problem]

[0009] A display panel according to one embodiment includes a circuit board having a first pad; a plurality of light-emitting elements arranged on the circuit board and having a second pad; and a metal bonding layer bonding the first pad to the second pad, wherein the plurality of light-emitting elements include at least one light-emitting element for restoration, and the metal bonding layer bonding the first pad to the second pad of the light-emitting element for restoration has a thickness or composition that is different from that of a metal bonding layer bonding the second pad of another light-emitting element to the first pad.

[0010] A method for restoring a light-emitting element in accordance with one embodiment includes removing a defective light-emitting element from a plurality of light-emitting elements transferred onto a circuit board; manufacturing a restoration light-emitting element on the board; forming a bonding material layer on the restoration light-emitting element; and bonding the restoration light-emitting element to the position from which the defective light-emitting element was removed using the bonding material layer.

[0011] A display panel according to one embodiment includes a circuit board having a first pad; a plurality of first light-emitting elements disposed on the circuit board; a first metal bonding layer bonding the first light-emitting elements to the first pad; a lower barrier layer disposed between the first metal bonding layer and the first pad; and a lower metal layer disposed between the lower barrier layer and the first metal bonding layer, wherein the first metal bonding layer is an alloy layer and the lower metal layer is a metal layer different in composition from the first metal bonding layer.

[0012] A display device according to an embodiment includes the display panel. [Brief description of the drawings]

[0013] [Figure 1] FIG. 1 is a schematic perspective view for explaining a display device according to an embodiment. [Diagram 2] FIG. 2 is a schematic plan view illustrating a display panel according to an embodiment. [Diagram 3] FIG. 3 is a schematic partial cross-sectional view taken along line AA' in FIG. 2 to illustrate a display panel according to an embodiment. [Figure 4] 4a, 4b, 4c, and 4d are schematic cross-sectional views illustrating the restoration process of a micro LED according to an embodiment. [Diagram 5] 5a, 5b, 5c, 5d and 5e are schematic cross-sectional views illustrating a method for restoring a micro LED according to one embodiment. [Figure 6]6a, 6b, 6c, 6d and 6e are schematic cross-sectional views illustrating a restoring process of a micro LED according to yet another embodiment. [Figure 7] FIG. 7 is a schematic cross-sectional view illustrating a restoring process of a micro LED according to yet another embodiment. [Figure 8] FIG. 8 is a schematic plan view illustrating a display panel according to still another embodiment. [Figure 9] 9a, 9b, 9c, 9d and 9e are schematic cross-sectional views illustrating a restoring process of a micro LED according to yet another embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to fully convey the concept of the present disclosure to those skilled in the art to which the present disclosure pertains. Therefore, the present disclosure is not limited to the embodiments described below, and may be embodied in other forms. In addition, in the drawings, the width, length, thickness, and the like of components may be exaggerated for convenience. In addition, when a component is described as being "on" or "above" another component, this includes not only the case where each part is "directly above" or "directly above" the other part, but also the case where another component is interposed between each component and the other component. The same reference numerals refer to the same components throughout the specification.

[0015] A display panel according to one embodiment includes a circuit board having a first pad; a plurality of light-emitting elements arranged on the circuit board and having a second pad; and a metal bonding layer bonding the first pad to the second pad, wherein the plurality of light-emitting elements include at least one light-emitting element for restoration, and the metal bonding layer bonding the first pad to the second pad of the light-emitting element for restoration has a thickness or composition that is different from that of a metal bonding layer bonding the second pad of another light-emitting element to the first pad.

[0016] In an embodiment, the upper surface of the restoring light-emitting element may be located higher than the upper surface of another light-emitting element.

[0017] The metal bonding layer may include AuSn, CuSn or In.

[0018] In one embodiment, each of the light emitting elements can emit light of any one of blue light, green light, and red light.

[0019] In another embodiment, the light emitting elements can be configured to emit all of the following light: blue, green and red light.

[0020] A method for restoring a light-emitting element in accordance with one embodiment includes removing a defective light-emitting element from a plurality of light-emitting elements transferred onto a circuit board; manufacturing a restoration light-emitting element on the board; forming a bonding material layer on the restoration light-emitting element; and bonding the restoration light-emitting element to the position from which the defective light-emitting element was removed using the bonding material layer.

[0021] By forming the bonding material layer on the restoring light emitting device, the restoring light emitting device can be easily bonded onto the circuit board.

[0022] The bonding material layer may include In. Since In has a relatively low melting temperature, it is possible to bond the restoring light emitting element without affecting other light emitting elements.

[0023] Transferring the plurality of light-emitting elements onto a circuit board may include forming a bonding material layer on first pads on a circuit board, placing the plurality of light-emitting elements on the bonding material layer, and applying heat to the bonding material layer to form a metal bonding layer.

[0024] Furthermore, when removing the defective light-emitting element, the metal bonding layer is removed together, but the first pad may remain, and the recovery light-emitting element can be bonded onto the remaining first pad.

[0025] In one embodiment, a plurality of recovery light-emitting elements can be manufactured together on the substrate, a bonding material layer can be formed on each of the plurality of recovery light-emitting elements, a portion of the plurality of recovery light-emitting elements can be transferred onto a temporary substrate, the recovery light-emitting elements transferred onto the temporary substrate can be transferred to a carrier substrate, and the recovery light-emitting elements on the carrier substrate can be bonded together at the position where the defective light-emitting element was removed using the bonding material layer.

[0026] Furthermore, the restoring light emitting element transferred onto the temporary substrate may be disposed in a position corresponding to the position where the defective light emitting element was removed.

[0027] In addition, the carrier substrate may include an adhesive tape, and the restoring light-emitting element may be transferred to the adhesive tape.

[0028] In another embodiment, a single restoration light emitting element can be provided on the substrate, and the restoration light emitting element on the substrate can be bonded to the location on the circuit board where the defective light emitting element was removed.

[0029] Furthermore, a plurality of defective light-emitting elements on the circuit board can be restored by using a plurality of substrates on which a single restoration light-emitting element is arranged.

[0030] Meanwhile, the method for restoring the light emitting device may further include forming a barrier metal layer on the first pad before forming a bonding material layer on the first pad.

[0031] Also, when the metal bonding layer is removed, the barrier metal layer can be removed together.

[0032] In one embodiment, the barrier metal layer may include a lower barrier metal layer and an upper barrier metal layer, and when the metal bonding layer is removed, the upper barrier metal layer is also removed, but the lower barrier metal layer may remain.

[0033] A display panel according to one embodiment includes a circuit board having a first pad; a plurality of first light-emitting elements disposed on the circuit board; a first metal bonding layer bonding the first light-emitting elements to the first pad; a lower barrier layer disposed between the first metal bonding layer and the first pad; and a lower metal layer disposed between the lower barrier layer and the first metal bonding layer, wherein the first metal bonding layer is an alloy layer and the lower metal layer is a metal layer different in composition from the first metal bonding layer.

[0034] By including the lower metal layer, when the first light emitting element is replaced with a second light emitting element for restoration, the lower metal layer can mix with the bonding material layer to form a bonding layer, thereby improving the adhesion of the second light emitting element.

[0035] The first metal bonding layer may include Au and In, and the bottom metal layer may include Au.

[0036] Additionally, the lower metal layer may be in contact with the lower barrier layer.

[0037] The display panel may further include an upper barrier layer disposed between the first metal bonding layer and the lower metal layer, and the upper barrier layer may contact the first metal bonding layer and the lower metal layer.

[0038] The first light-emitting element may include a second pad; and a third barrier layer disposed on the second pad, and the first metal bonding layer may be disposed between the lower metal layer and the third barrier layer.

[0039] The display panel may further include at least one second light-emitting element disposed on the circuit board; and a second metal bonding layer bonding the second light-emitting element to the first pad, and the second metal bonding layer may include a metal element of the lower metal layer.

[0040] The display panel may further include a lower barrier layer disposed between the second metal bonding layer and the first pad, and the lower barrier layer may be in contact with the first pad and the second metal bonding layer.

[0041] The display panel may further include an upper barrier layer disposed between the first metal bonding layer and the lower metal layer, and the upper barrier layer may be in contact with the first metal bonding layer.

[0042] The second metallurgical bonding layer may be thicker than the first metallurgical bonding layer.

[0043] Furthermore, an upper surface of the second light emitting element may be positioned higher than an upper surface of the first light emitting element.

[0044] In one embodiment, the first and second light emitting elements can emit any one of blue light, green light and red light, respectively.

[0045] In another embodiment, the first and second light emitting elements can be configured to emit all of blue, green and red light, respectively.

[0046] A display device according to an embodiment includes the display panel.

[0047] Hereinafter, the embodiments will be described in detail with reference to the drawings.

[0048] FIG. 1 is a schematic perspective view for explaining a display device according to an embodiment.

[0049] The light emitting element may be used in, but is not limited to, a smart watch 1000a, a VR display device such as a VR headset 1000b, or an AR display device such as an augmented reality glasses 1000c.

[0050] A display panel for displaying an image is mounted in the display device. Fig. 2 is a schematic plan view for explaining a display panel 1000 according to an embodiment, and Fig. 3 is a schematic partial cross-sectional view taken along the cut line A-A' in Fig. 2.

[0051] 2 and 3, the display panel 1000 includes a circuit board 110 and a light emitting element 100, 100a. Here, the light emitting element 100, 100a can be a small LED commonly known as a micro LED. For example, the light emitting element 100 can be smaller than 500 μm×500 μm, and even smaller than 100 μm×100 μm. However, the present disclosure does not limit the size of the light emitting element 100 to a specific size.

[0052] The circuit board 110 may include circuitry for manual matrix driving or active matrix driving. In one embodiment, the circuit board 110 may include wiring and resistors therein. In another embodiment, the circuit board 110 may include wiring, transistors, and capacitors. The circuit board 110 may also have pads on its top surface to allow electrical connection to circuitry disposed therein.

[0053] A number of light emitting elements 100, 100a are aligned on a circuit board 110. The light emitting element 100 represents a light emitting element with good performance mounted on the circuit board 110 by mass transfer, and the light emitting element 100a represents a restored light emitting element. The structure of the light emitting element 100a may be the same as the light emitting element 100, but is not necessarily limited thereto. The spacing between the light emitting elements 100, 100a may be at least wider than the width of the light emitting element.

[0054] In one embodiment, the light emitting element 100, 100a may be a subpixel that emits light of a specific color, and such a subpixel may constitute one pixel. For example, a blue LED, a green LED, and a red LED may be adjacent to each other to constitute one pixel. However, the present disclosure is not limited thereto, and the light emitting element 100, 100a may have a stacked structure that emits light of various colors. For example, each of the light emitting elements 100, 100a may have a structure in which a blue LED, a green LED, and a red LED are stacked on top of each other, and thus one light emitting element may constitute one pixel.

[0055] The light emitting element 100 can have a pad 105 that can be attached to a corresponding pad 115 of the circuit board 110 by a bonding layer 120. The bonding layer 120 can include a bonding material such as, for example, AuSn, CuSn, or In.

[0056] Meanwhile, the light emitting element 100a may have a pad 105a, and the pad 105a may be bonded to a corresponding pad 115a of the circuit board 110 by a bonding layer 120a. The pad 105a may be formed of the same material as the pad 105 and may have the same layer structure, but is not limited thereto, and may be formed of different materials and may have different layer structures. The pad 115a may be formed of the same material as the pad 115 and may have the same layer structure, but is not limited thereto. For example, the pad 115a may be modified from the material and structure of the pad 115. This will be described in detail later.

[0057] In one embodiment, the upper surface of the light emitting element 100a may be located higher than the upper surface of the light emitting element 100. In particular, the bonding layer 120a may be thicker than the bonding layer 120, or the pad 105a may be thicker than the pad 105. Furthermore, the composition of the bonding layer 120a may be different from the composition of the bonding layer 120. For example, the Ni content of the bonding layer 120 may be higher than the Ni content of the bonding layer 120a. Furthermore, the Au content of the bonding layer 120 may be higher than the Au content of the bonding layer 120a. Also, the In content of the bonding layer 120a may be higher than the In content of the bonding layer 120.

[0058] The display panel 1000 may include at least one light emitting element 100a, which may be distinguished from the light emitting element 100 by, among other things, the structure or components of the bonding layer 120a, or the height of the upper surface of the light emitting element 100a, or the like.

[0059] 4a, 4b, 4c, and 4d are schematic cross-sectional views illustrating a micro LED restoring process according to an embodiment.

[0060] 4a, the circuit board 110 has pads 115. The pads 115 are connected to a circuit in the circuit board 110 and provide contacts for connecting the light emitting element 100 to the circuit. On the circuit board 110, pads 115 are arranged for each region where the light emitting element 100 is mounted in order to mount a plurality of light emitting elements 100. The pads 115 may be formed of a metal layer including Au. For example, the pads 115 may have a multi-layer structure of Cu / Ni / Au.

[0061] Meanwhile, a barrier layer 121 is provided on the pad 115, and a bonding material layer 123 is provided on the barrier layer 121. The barrier layer 121 prevents the bonding material layer 123 from diffusing in the pad 115, thereby preventing damage to the pad 115. The barrier layer 121 may be a metal layer mixed with the bonding material layer 123, or may be a metal layer for blocking the diffusion of the bonding material layer 123. For example, the barrier layer 121 may include at least one metal selected from the group consisting of Ni, Cr, Ti, Ta, Mo, and W. As an example, the barrier layer 121 may have a multi-layer structure of Cr / Ni or Ti / Ni.

[0062] The bonding material layer 123 may include AuSn, CuSn or In. For mass transfer with micro LED technology, the bonding material layer 123 is typically provided on the pads 115.

[0063] Meanwhile, although not shown, a metal layer, such as an Au layer, which is mixed with the bonding material layer 123 may be interposed between the barrier layer 121 and the bonding material layer 123 .

[0064] Meanwhile, the light emitting element 100 has a pad 105. The pad 105 corresponds to a pad 115 on the circuit board 110. The pad 105 can be a bump pad protruding from the light emitting element 100 as shown, but does not necessarily have to have a protruding shape. A number of light emitting elements 100 are moved to the positions of the corresponding pads 115 on the circuit board 110.

[0065] 4b, after the pads 105 of the light emitting device 100 are aligned on the bonding material layer 123 of FIG. 4a, heat is applied to a bonding temperature to form the bonding layer 120. The barrier layer 121 and the bonding material layer 123 may be mixed with each other, and at least a portion of the pads 105 may be mixed with the bonding material layer 123. The bonding layer 120 allows the light emitting device 100 to be stably attached to the circuit board 110.

[0066] 4c, as described with reference to FIG 4b, after the light emitting device 100 is bonded to the circuit board 110, a defect of the light emitting device 100 may be detected. The defect of the light emitting device 100 may be caused, for example, by incorrect bonding or by poor performance of the light emitting device 100.

[0067] In this case, the defective light emitting element 100 is removed from the circuit board 110. After the light emitting element 100 is removed, the remaining bonding layer 120 may be removed together with the light emitting element 100, and the barrier layer 121 may also be removed. The bonding layer 120 and the barrier layer 121 may be removed using a laser. As a result, the pads 115a may remain on the circuit board 110 after the light emitting element 100 is removed. The pads 115a may be the same as the pads 115 before the light emitting element 100 is bonded, but may be deformed from these pads 115. For example, the pads 115a may include the metal material of the bonding material layer 123.

[0068] Meanwhile, a restoring light emitting device 100a is provided on the pad 115a. The restoring light emitting device 100a is for replacing the defective light emitting device 100, and can have performance required for the light emitting device 100. Furthermore, the light emitting device 100a can have the same structure as the general structure of the light emitting device 100, but is not necessarily limited thereto.

[0069] Meanwhile, the light emitting element 100a may have a pad 105a, which may be the same as the pad 105 described above in material and layer structure, but is not necessarily limited thereto.

[0070] Meanwhile, a bonding material layer 123a is provided on the pad 105a. The bonding material layer 123a may include a bonding material such as AuSn, CuSn, or In. In one embodiment, the bonding material layer 123a has a melting point that is the same as or lower than that of the bonding material layer 123 described above.

[0071] 4d, after the bonding material layer 123a is aligned on the corresponding pad 115a, heat is applied to a bonding temperature to form a bonding layer 120a. The bonding layer 120a bonds the light emitting element 100a to the circuit board 110. The bonding layer 120a may be composed of the same material as the bonding layer 120, but may also be composed of a different material.

[0072] In this embodiment, in order to mount the light emitting device 100a for restoration on the circuit board 110, a bonding material layer 123a is provided on the pad 105a of the light emitting device 100a for restoration. In the case of a micro LED, since the light emitting device 100 is small, it is very difficult to form the bonding material layer 123a on the pad 115a on the circuit board 110. On the contrary, since the bonding material layer 123a is provided on the pad 105a of the light emitting device 100a, it is easy to form the bonding material layer 123a, and therefore the light emitting device 100a for restoration can be easily mounted in the area where the defective light emitting device 100 was removed.

[0073] The following is a detailed description of the micro LED restoration method according to the embodiment.

[0074] 5a, 5b, 5c, 5d and 5e are schematic cross-sectional views illustrating a micro LED restoration method according to one embodiment.

[0075] 5a, the light-emitting element 100a for recovery may be arranged on a substrate 21. The substrate 21 may be a growth substrate for growing an epitaxial layer. For example, the substrate 21 may be a sapphire substrate, a silicon substrate, a GaAs substrate, etc.

[0076] The light emitting device 100a may be fabricated using an epitaxial layer grown on a substrate 21, and may include a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. Furthermore, the light emitting device 100a may have a structure in which multiple LEDs are stacked.

[0077] Each light emitting device 100a has a pad 105a, and a bonding material layer 123a is provided on the pad 105a. For example, the bonding material layer 123a may be provided by individually dotting the bonding material layer 123a on the pad 105a, or the bonding material layer 123a may be formed on the pad 105a at once by dipping the pad 105a into a molten bonding material.

[0078] 5b, the light emitting device 100a for restoration is transferred onto the temporary substrate 210. The temporary substrate 210 may be a tape. After the light emitting device 100 is collectively transferred onto the circuit substrate 110, the light emitting device 100 is inspected to detect defective light emitting devices 100. The light emitting device 100a for restoration is transferred onto the temporary substrate 210 to correspond to the positions of the defective light emitting devices 100. The light emitting device 100a for restoration may be separated from the substrate 21 using a laser lift-off technique.

[0079] 5c, the light emitting element 100a transferred onto the temporary substrate 210 is transferred again onto a carrier substrate 310. The carrier substrate 310 may have an adhesive tape 315 on its surface. The adhesive tape 315 may also be made of a material that is easily deformable.

[0080] The temporary substrate 210 is removed from the light emitting device 100 a so that the bonding material layer 123 a can be disposed on the opposite side of the carrier substrate 310 .

[0081] 5d, the circuit board 110 from which the defective light emitting element 100 has been removed and the carrier substrate 310 are moved closer to each other, and the light emitting element 100a is disposed at a corresponding position on the circuit board 110. As described with reference to FIG. 4c, after the defective light emitting element 100 has been removed, the bonding layer 120 may also be removed, leaving the pad 115a. Any barrier layer 121 formed on the pad 115 may also be removed.

[0082] Meanwhile, the adhesive tape 315 on the carrier substrate 310 may be spaced apart from the upper surface of the light emitting device 100 mounted on the circuit board 110. However, the present disclosure is not limited thereto, and the adhesive tape 315 may also be in contact with the light emitting device 100. Next, the light emitting device 100a is bonded to the circuit board 110 by applying heat to the bonding material layer 123a.

[0083] 5e, the carrier substrate 310 is separated from the light emitting element 100a to provide a display panel having a restored light emitting element 100a. The top surface of the light emitting element 100a may be approximately the same as or slightly higher than the top surface of the light emitting element 100.

[0084] According to this embodiment, a defective light emitting device 100 among the light emitting devices 100 arranged on the circuit board 110 can be replaced with the restoring light emitting device 100a through a single restoration process.

[0085] 6a, 6b, 6c, 6d and 6e are schematic cross-sectional views illustrating a micro LED restoring process according to yet another embodiment.

[0086] First, referring to FIG. 6a, the light-emitting device for restoration 100a is formed on a substrate 21a. In this embodiment, a single light-emitting device 100a is provided on the substrate 21a. A plurality of substrates 21a each having a single light-emitting device 100a may be provided. The substrate 21a may be a growth substrate for manufacturing the light-emitting device 100a. The substrate 21a is wider than the light-emitting device 100a, and therefore the substrate 21a is easier to handle than the light-emitting device 100a.

[0087] The light emitting element 100a, as described above, has a pad 105a on which a layer of bonding material 123a is provided.

[0088] 6b, a light emitting element 100a is placed and bonded at the position on the circuit board 110 from which the defective light emitting element 100 was removed. The light emitting element 100a is difficult to handle due to its small size, but by using a substrate 21a that is larger than the light emitting element 100a, the light emitting element 100a can be easily handled.

[0089] The defective light-emitting element 100 and the bonding layer 120 on the circuit board 110 are removed, leaving the pad 115a as described above. The bonding material layer 123a disposed on the recovery light-emitting element 100a is bonded to the pad 105a to form the bonding layer 120a, and the light-emitting element 100a is bonded to the circuit board 110 by the bonding layer 120a.

[0090] 6c, the substrate 21a is removed from the light emitting device 100a. The substrate 21a can be removed from the light emitting device 100a using, for example, a laser lift-off technique or a chemical etching technique, SLO, or the like.

[0091] 6d and 6e, the substrate 21a is used to bond the restoration light-emitting element 100a to another position from which the defective light-emitting element 100 was removed, and the substrate 21a is removed from the light-emitting element 100a. By performing the process of bonding the light-emitting element 100a to the position from which the defective light-emitting element 100 was removed multiple times using multiple substrates 21a having the restoration light-emitting element 100a, all of the defective light-emitting elements 100 on the circuit substrate 110 can be restored.

[0092] In this embodiment, the upper surface of the restoring light-emitting element 100a mounted on the circuit board 110 may be located higher than the upper surface of the light-emitting element 100. This can prevent the substrate 21a from damaging the light-emitting element 100 on the circuit board 110. However, the present disclosure is not necessarily limited to this, and the heights of the upper surfaces of the light-emitting elements 100 and 100a may be the same.

[0093] FIG. 7 is a schematic cross-sectional view illustrating a restoring process of a micro LED according to yet another embodiment.

[0094] Referring to FIG. 7, in the above embodiment, a single barrier layer 121 is interposed between the pad 115 on the circuit board 110 and the bonding material layer 123, but in this embodiment, multiple barrier layers 121a, 121b are arranged, which is different.

[0095] That is, as shown in the figure, the lower barrier layer 121a, the intermediate layer 122, and the upper barrier layer 121b may be interposed between the pad 115 and the bonding material layer 123. Here, the lower barrier layer 121a and the upper barrier layer 121b may include Ni, Cr, Ti, Ta, Mo, or W. For example, the upper barrier layer 121b may include Ni that easily mixes with the bonding material layer 123, and the lower barrier layer 121a may include Cr, Ti, Ta, Mo, or W that blocks the bonding material layer 123. Meanwhile, the intermediate layer 122 is a metal layer that separates the lower barrier layer 121a and the upper barrier layer 121b, and may be, for example, an Au layer. In particular, the intermediate layer 122 may be a metal layer that mixes well with the bonding material layer 123.

[0096] Furthermore, a metal layer that mixes well with the bonding material layer 123, such as an Au layer, may be disposed on the upper barrier layer 121b.

[0097] When bonding the light emitting device 100, the pad 105 of the light emitting device 100 is disposed on the bonding material layer 123 to form the bonding layer 120. When the defective light emitting device 100 is subsequently removed, the bonding layer 120 is also removed together with the light emitting device 100, and at this time, the upper barrier layer 121b is also removed together with the light emitting device 100. However, unlike the previous embodiment, in this embodiment, the lower barrier layer 121a may remain, and therefore, it is possible to prevent the pad 115 from being damaged by the lower barrier layer 121a.

[0098] In addition, according to this embodiment, when the lower barrier layer 121a and the upper barrier layer 121b are formed from different metal layers, the components of the bonding layer formed when bonding the light-emitting element 100 and the bonding layer formed when bonding the recovery light-emitting element 100a are different from each other.

[0099] Meanwhile, metal bonding is generally formed by intermixing metal materials. However, the barrier layer may not be useful for alloy formation, and the alloy formation temperature may be high. Meanwhile, since the alloy layer that has already been formed remains stable, it is difficult to reuse the alloy layer for metal bonding. Hereinafter, a display panel suitable for bonding a light emitting device for restoring and a bonding method for the light emitting device for restoring will be described.

[0100] 8 is a schematic partial cross-sectional view illustrating a display panel according to another embodiment, taken along line AA' in FIG.

[0101] Here, the light emitting element 100, 100a is a small LED commonly called a micro LED as described above, and may be, for example, smaller than 500 μm×500 μm, and further smaller than 100 μm×100 μm, but the present disclosure does not limit the size of the light emitting element 100, 100a to a specific size.

[0102] The circuit board 110 may include circuitry for manual matrix driving or active matrix driving. In one embodiment, the circuit board 110 may include wiring and resistors therein. In another embodiment, the circuit board 110 may include wiring, transistors, and capacitors. The circuit board 110 may also have pads on its top surface to allow electrical connection to circuitry disposed therein.

[0103] A number of light emitting elements 100, 100a are aligned on a circuit board 110. The light emitting element 100 represents a light emitting element with good performance mounted on the circuit board 110 by mass transfer, and the light emitting element 100a represents a restoration light emitting element replacing a defective light emitting element 100. The structure of the light emitting element 100a may be the same as the light emitting element 100, but is not necessarily limited thereto. In one embodiment, the spacing between the light emitting elements 100, 100a may be wider than the width of one light emitting element 100.

[0104] In one embodiment, the light emitting element 100, 100a may be a subpixel that emits light of a specific color, and such a subpixel may constitute one pixel. For example, a blue LED, a green LED, and a red LED may be adjacent to each other to constitute one pixel. However, the present disclosure is not limited thereto, and the light emitting element 100, 100a may have a stacked structure that emits light of various colors. For example, the light emitting element 100, 100a may have a stacked structure in which a blue LED, a green LED, and a red LED are overlapped, and thus one light emitting element may constitute one pixel. In one embodiment, a green LED may be disposed between the blue LED and the red LED. In another embodiment, a blue LED may be disposed between the green LED and the red LED. In this case, the brightness of the blue LED may be relatively reduced and the brightness of the green LED may be further increased, so that the mixture ratio of red, green, and blue can be easily adjusted.

[0105] The light emitting element 100 can have a pad 105 that can be attached to a corresponding pad 115 of the circuit board 110 by a bonding layer 220. The bonding layer 220 can include a bonding material such as Sn or In. In particular, the bonding layer 220 can be an alloy layer including Au and In.

[0106] In one embodiment, the barrier layer 107 can be disposed between the bonding layer 220 and the pad 105. In another embodiment, the barrier layer 107 material can be dispersed within the bonding layer 220 by intermixing with the bonding layer 220.

[0107] Meanwhile, the lower barrier layer 121a is disposed between the pad 115 and the bonding layer 220. The lower barrier layer 121a may be in contact with the pad 115. The lower barrier layer 121a may include Ni, Cr, Ti, Ta, Mo, or W.

[0108] A lower metal layer 221a may be disposed between the lower barrier layer 121a and the bonding layer 220. The lower metal layer 221a is spaced apart from the bonding layer 220 and therefore remains unmixed with the bonding layer 220. The lower metal layer 221a is a metal layer that mixes with a bonding material layer such as Sn or In, and may be formed of, for example, Au. The lower metal layer 221a may be in contact with the lower barrier layer 121a.

[0109] An upper barrier layer 121b may be disposed between the lower metal layer 221a and the bonding layer 220. The upper barrier layer 121b may include Ni, Cr, Ti, Ta, Mo, or W. The upper barrier layer 121b may be a metal layer of the same material as the lower barrier layer 121a, but is not limited thereto. In this embodiment, the upper barrier layer 121b may include Ni, Cr, Ti, Ta, Mo, or W suitable for blocking the bonding layer 220. The upper barrier layer 121b blocks the bonding layer 220 to prevent the lower metal layer 221a from mixing with the bonding layer 220. The upper barrier layer 121b may contact the lower metal layer 221a.

[0110] Meanwhile, the light emitting element 100a may have a pad 105a, which may be bonded to a corresponding pad 115 of the circuit board 110 by a bonding layer 220a. The pad 105a may be formed of the same material as the pad 105 and may have the same layer structure, but is not necessarily limited thereto, and may be formed of different materials and may have different layer structures.

[0111] In one embodiment, the upper surface of the light emitting element 100a may be located higher than the upper surface of the light emitting element 100. In particular, the bonding layer 220a may be thicker than the bonding layer 220, or the pad 105a may be thicker than the pad 105. Furthermore, the composition of the bonding layer 220a may be similar to the composition of the bonding layer 220. In particular, the bonding layer 220a includes the metal composition of the lower metal layer 221a. For example, the bonding layer 220a may be an alloy layer in which Au and In are mixed. However, the content of each component of the bonding layer 220a may be different from the content of each component of the bonding layer 220.

[0112] Meanwhile, a barrier layer 107a may be disposed between the pad 105a and the bonding layer 220a. The barrier layer 107a may be, but is not limited to, a metal layer made of the same material as the barrier layer 107. Also, the metal material of the barrier layer 107a may be mixed with the bonding layer 220a and dispersed within the bonding layer 220a.

[0113] In one embodiment, the lower barrier layer 121a may remain between the pad 115 and the bonding layer 220a. The lower barrier layer 121a may include Cr, Ti, Ta, Mo, or W, among others. In another embodiment, the lower barrier layer 121a may be mixed with the bonding layer 220a and dispersed within the bonding layer 220a. For example, if the lower barrier layer 121a is formed of Ni, Ni may be dispersed within the bonding layer 220a.

[0114] According to this embodiment, the lower metal layer 221a remains under the light emitting device 100, whereas the lower metal layer 221a does not remain under the light emitting device 100a. Therefore, when the light emitting device 100 is removed due to a bonding failure, the lower metal layer 221a can be used to bond the restoring light emitting device 100a.

[0115] 9a, 9b, 9c, 9d, and 9e are schematic cross-sectional views illustrating a restoring process of a micro LED according to yet another embodiment.

[0116] 9a, the circuit board 110 has pads 115. The pads 115 are connected to a circuit in the circuit board 110 and provide contacts for connecting the light emitting element 100 to the circuit. On the circuit board 110, pads 115 are arranged for each region where the light emitting element 100 is mounted in order to mount a plurality of light emitting elements 100. The pads 115 may be formed of a metal layer including Au. For example, the pads 115 may have a multi-layer structure of Cu / Ni / Au.

[0117] Meanwhile, a lower barrier layer 121a, a lower metal layer 221a, an upper barrier layer 121b, an upper metal layer 221b, and a bonding material layer 223 are provided on the pad 115. The lower barrier layer 121a is disposed between the pad 115 and the lower metal layer 221a.

[0118] The lower metal layer 221a is separated from the upper metal layer 221b by the upper barrier layer 121a. The lower metal layer 221a may be formed of the same metal layer as the upper metal layer 221b, for example, but is not limited to, an Au layer. The upper metal layer 221b may be formed of a metal layer that mixes with the bonding material layer 223 to form an alloy during the bonding process.

[0119] The bonding material layer 223 is formed of a material that forms an alloy to form a bonding layer during a bonding process. For example, the bonding material layer 223 may be formed of an In layer. For mass transfer using micro LED technology, the bonding material layer 223 is generally provided on the pad 115.

[0120] The upper barrier layer 121b prevents the metal components of the bonding material layer 223 from diffusing into the lower metal layer 221a. The upper barrier layer 121b may include at least one metal, such as Ni, Cr, Ti, Ta, Mo, or W. As an example, the barrier layer 121 may have a multi-layer structure of Cr / Ni or Ti / Ni.

[0121] Meanwhile, the light emitting element 100 has a pad 105. The pad 105 corresponds to a pad 115 on the circuit board 110. The pad 105 can be a bump pad protruding from the light emitting element 100 as shown, but does not necessarily have to have a protruding shape. A number of light emitting elements 100 are moved to the positions of the corresponding pads 115 on the circuit board 110.

[0122] A barrier layer 107 and a metal layer 109 may be provided on the pad 105. The metal layer 109 may be formed of a metal material that mixes with the bonding material layer 223 to form an alloy. The barrier layer 107 protects the pad 105 while the bonding material layer 223 and the metal layer 109 form an alloy. The barrier layer 107 may include at least one metal, for example, Ni, Cr, Ti, Ta, Mo, and W.

[0123] 9b, after the metal layer 109 of the light emitting device 100 is aligned on the bonding material layer 223 of FIG. 9a, heat is applied to a bonding temperature to form the bonding layer 220. The upper metal layer 221b, the bonding material layer 223, and the metal layer 109 are mixed and alloyed to form the bonding layer 220. Thus, the bonding layer 220 may include the metal component of the bonding material layer 223, the metal component of the upper metal layer 221b, and the metal component of the metal layer 109. In order to form a good bonding layer 220, the thickness of the bonding material layer 223 and the thicknesses of the upper metal layer 221b and the metal layer 109 may be controlled in an appropriate ratio.

[0124] According to this embodiment, a bonding layer 220 is formed between the upper barrier layer 121b and the barrier layer 107. The bonding layer 120 allows the light emitting device 100 to be stably attached to the circuit board 110. The upper barrier layer 121b prevents the metal material of the bonding layer 220 from diffusing into the lower metal layer 221a, thereby preventing alloying of the lower metal layer 221a. However, at least a portion of the upper barrier layer 121b may be mixed and dispersed in the bonding layer 220.

[0125] The barrier layer 107 can protect the pad 105 by blocking the diffusion of the metal material of the bonding layer 220 into the pad 105. However, at least a portion of the barrier layer 107 may be mixed and dispersed within the bonding layer 220.

[0126] 9c, as described with reference to FIG 9b, after the light emitting device 100 is bonded to the circuit board 110, a defect of the light emitting device 100 may be detected. The defect of the light emitting device 100 may be caused, for example, by incorrect bonding or by a performance defect of the light emitting device 100.

[0127] In this case, the defective light emitting element 100 is removed from the circuit board 110. After the light emitting element 100 is removed, the remaining bonding layer 220 is also removed, and the barrier layer 121b can also be removed entirely. For example, the bonding layer 220 and the barrier layer 121b can be removed using a laser. As a result, the lower metal layer 221a remains on the upper part of the pad 115 after the light emitting element 100 is removed on the circuit board 110.

[0128] 9d, a restoring light emitting device 100a is provided on the pad 115. The restoring light emitting device 100a is for replacing the defective light emitting device 100, and may have performance required for the light emitting device 100. Furthermore, the light emitting device 100a may have the same structure as the general structure of the light emitting device 100, but is not limited thereto.

[0129] Meanwhile, the light emitting element 100a may have a pad 105a, which may be the same as the pad 105 described above in material and layer structure, but is not necessarily limited thereto.

[0130] Meanwhile, a barrier layer 107a, a metal layer 109a, and a bonding material layer 223a are provided on the pad 105a. The barrier layer 107a is provided to protect the pad 105a, and the metal layer 109a is provided to form a bonding layer together with the bonding material layer 223a.

[0131] Bonding material layer 223a may include bonding materials such as Sn or In. In one embodiment, bonding material layer 223a has a melting point that is the same as or lower than that of bonding material layer 223 described above.

[0132] 9e, after the bonding material layer 223a is aligned on the corresponding pad 115, heat is applied to a bonding temperature to form a bonding layer 220a. The light emitting element 100a is bonded to the circuit board 110 by the bonding layer 220a. The bonding layer 220a may be formed by mixing the metal layer 109a, the lower metal layer 221a, and the bonding material layer 223a. Furthermore, at least a part of the metal material of the lower barrier layer 121a or the barrier layer 107a may be mixed into the bonding layer 220a. The bonding layer 220a may be composed of the same components as the bonding layer 220, but may also be composed of other components.

[0133] Meanwhile, the method of bonding the light emitting device for restoration 100a is similar to the method described with reference to FIGS. 5a to 5e or 6a to 6e above, and therefore, detailed description thereof will be omitted to avoid duplication.

[0134] According to this embodiment, a lower metal layer 221a and an upper metal layer 221b are provided on the pad 115, and the lower metal layer 221a can be used to bond the light-emitting element 100a for restoring, thereby improving the bonding strength of the light-emitting element 100a for restoring.

[0135] Although various embodiments have been described above, the present disclosure is not limited to these embodiments, and matters or components described in one embodiment may be applied to other embodiments without departing from the technical concept of the present disclosure.

Claims

1. a circuit board having a first pad; A plurality of first light emitting elements disposed on the circuit board; a first metal bonding layer bonding said first light emitting element to said first pad; a lower barrier layer disposed between said first metal bonding layer and said first pad; and a lower metal layer disposed between the lower barrier layer and the first metal bonding layer; The display panel, wherein the first metal bonding layer is an alloy layer, and the lower metal layer is a metal layer different in composition from the first metal bonding layer.

2. the first metal bonding layer comprises Au and In; The display panel of claim 1 , wherein the lower metal layer comprises Au.

3. The display panel of claim 1 , wherein the lower metal layer is in contact with the lower barrier layer.

4. 10. The display panel of claim 1, further comprising an upper barrier layer disposed between said first metal bonding layer and said lower metal layer.

5. The display panel of claim 4 , wherein the upper barrier layer contacts the first metal bonding layer and the lower metal layer.

6. The first light-emitting element is A second pad; and a third barrier layer disposed on the second pad; The display panel of any one of claims 1 to 5, wherein the first metal bonding layer is disposed between the lower metal layer and the third barrier layer.

7. at least one second light emitting element disposed on the circuit board; and a second metal bonding layer bonding the second light emitting element to the first pad; The display panel of any one of claims 1 to 5, wherein the second metal bonding layer comprises a metal element of the lower metal layer.

8. 8. The display panel of claim 7, further comprising a lower barrier layer disposed between said second metal bonding layer and said first pad, said lower barrier layer contacting said first pad and said second metal bonding layer.

9. an upper barrier layer disposed between the first metal bonding layer and the lower metal layer; 9. The display panel of claim 8, wherein the upper barrier layer contacts the first metal bonding layer.

10. 8. The display panel of claim 7, wherein the second metal bonding layer is thicker than the first metal bonding layer.

11. The display panel according to claim 7 , wherein an upper surface of the second light-emitting element is located higher than an upper surface of the first light-emitting element.

12. 8. The display panel according to claim 7, wherein the first and second light-emitting elements each emit light of any one of blue light, green light, and red light.

13. 8. The display panel of claim 7, wherein the first and second light-emitting elements are configured to emit all of blue, green and red light, respectively.

14. In a display device having a display panel, The display panel comprises: a circuit board having a first pad; A plurality of first light emitting elements disposed on the circuit board; a first metal bonding layer bonding said first light emitting element to said first pad; a lower barrier layer disposed between said first metal bonding layer and said first pad; and a lower metal layer disposed between the lower barrier layer and the first metal bonding layer; The display device, wherein said first metal bonding layer is an alloy layer and said lower metal layer is a metal layer different in composition from said first metal bonding layer.

15. at least one second light emitting element disposed on the circuit board; and a second metal bonding layer bonding the second light emitting element to the first pad; 15. The display device of claim 14, wherein the second metal bonding layer comprises a metal element of the lower metal layer.

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