Ion implantation apparatus, ion implantation method, and semiconductor device manufacturing method

Abstract

To stably supply source gas generated by the vaporization of a solid sample in a short time.SOLUTION: An ion implantation device includes a crucible 12 provided on the inside 72 of a vacuum vessel 70 and having an internal space capable of accommodating a solid sample 62 as a raw material for source gas, a laser light source 16 provided on the outside 74 of the vacuum vessel 70 and irradiating the crucible 12 with a laser beam, an arc chamber 60 that has an internal space 68 for plasma-forming the source gas to generate ions, and in which an ion beam 66 is drawn out from the internal space 68, and a nozzle 14 that connects the internal space of the crucible 12 and the internal space 68 of the arc chamber 60, and introduces the source gas vaporized in the internal space of the crucible 12 into the internal space 68 of the arc chamber 60.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to an ion implantation apparatus, an ion implantation method, and a method for manufacturing a semiconductor device. [Background technology]

[0002] In the semiconductor manufacturing process, a process of implanting ions into a semiconductor wafer (also called an ion implantation process) is carried out as a standard step for the purpose of changing the conductivity of the semiconductor, changing the crystal structure of the semiconductor, etc. The device used in this process is generally called an ion implantation device. In such an ion implantation device, an ion generation device is used for generating ions by turning a source gas into plasma. For example, a source gas is generated by heating a solid sample containing an impurity element using an electric heater and vaporizing the solid sample (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2002-324493 A Summary of the Invention [Problem to be solved by the invention]

[0004] When a solid sample is heated by an electric heater, it may take a long time until the source gas is generated stably.

[0005] An exemplary object of an embodiment of the present disclosure is to provide a technique for stably supplying a source gas generated by vaporizing a solid sample in a short period of time. [Means for solving the problem]

[0006] An ion implantation apparatus according to one aspect of the present disclosure includes a crucible provided inside a vacuum vessel and having an internal space capable of accommodating a solid sample that is a raw material for a source gas, a laser light source provided outside the vacuum vessel and irradiating laser light onto the crucible, an arc chamber having an internal space for converting the source gas into plasma to generate ions and from which an ion beam is extracted, and a nozzle connecting the internal space of the crucible and the internal space of the arc chamber and introducing source gas vaporized in the internal space of the crucible into the internal space of the arc chamber.

[0007] Another aspect of the present disclosure is an ion implantation method, which includes the steps of: introducing a solid sample containing at least one of aluminum, indium, antimony, tin, and magnesium into an internal space of a crucible; introducing the crucible containing the solid sample into a vacuum environment; irradiating the outside of the crucible with a laser beam having an output selected from a range of 0.1 kW to 10 kW and a wavelength range selected from a range of 200 nm to 2000 nm to heat the crucible to a temperature of 100° C. to 3000° C.; vaporizing the solid sample in the internal space of the crucible to generate a source gas; introducing the source gas into the internal space of an arc chamber; generating ions by turning the source gas into plasma in the internal space of the arc chamber; extracting an ion beam from the internal space of the arc chamber; and irradiating a semiconductor wafer with the ion beam.

[0008] Yet another aspect of the present disclosure is a semiconductor device manufacturing method, which includes: introducing a solid sample containing at least one of aluminum, indium, antimony, tin, and magnesium into an internal space of a crucible; introducing the crucible containing the solid sample into a vacuum environment; irradiating the outside of the crucible with a laser beam having an output selected from a range of 0.1 kW to 10 kW and a wavelength range selected from a range of 200 nm to 2000 nm to heat the crucible to a temperature of 100° C. to 3000° C.; vaporizing the solid sample in the internal space of the crucible to generate a source gas; introducing the source gas into the internal space of an arc chamber; generating ions by turning the source gas into plasma in the internal space of the arc chamber; extracting an ion beam from the internal space of the arc chamber; and irradiating a semiconductor wafer with the ion beam.

[0009] Any combination of the above components or mutual substitution of the components or expressions of the present disclosure between methods, devices, systems, etc. are also valid aspects of the present disclosure. Effect of the Invention

[0010] According to a non-limiting exemplary embodiment of the present invention, a source gas generated by vaporizing a solid sample can be stably supplied in a short period of time. [Brief description of the drawings]

[0011] [Figure 1] 1 is a functional block diagram showing an example of a schematic configuration of an ion implantation apparatus according to an embodiment; [Diagram 2] 1 is a diagram showing a schematic configuration of a vaporization device according to an embodiment; [Diagram 3] 4 is a flowchart showing an example of an ion implantation method according to the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] Hereinafter, with reference to the drawings, a detailed description will be given of an ion implantation apparatus, an ion implantation method, and a semiconductor device manufacturing method according to the present disclosure. In the description of the drawings, the same elements are given the same reference numerals, and duplicated descriptions are omitted as appropriate. In addition, the configurations described below are examples, and do not limit the scope of the present invention in any way.

[0013] 1 is a functional block diagram showing an example of a schematic configuration of an ion implantation apparatus 100 according to an embodiment. The ion implantation apparatus 100 includes an ion generation unit 110, a beam line unit 120, an implantation processing unit 130, and a vacuum pumping unit 140.

[0014] The ion generation unit 110 generates an ion beam to be implanted into the semiconductor wafer W. The ion generation unit 110 includes an ion source 112, an extraction electrode 114, and a mass analysis unit 116. The ion source 112 generates ions by ionizing atoms or molecules of a source gas introduced into the internal space of the arc chamber by generating a plasma discharge in the internal space of the arc chamber. The extraction electrode 114 generates an ion beam by extracting the ions generated in the internal space of the arc chamber as a beam-like ion group to the outside of the arc chamber. For example, a negative extraction voltage is applied to the extraction electrode 114 with respect to the arc chamber, and the ion beam is accelerated by the extraction voltage. The mass analysis unit 116 applies a magnetic field to the ion beam extracted by the extraction electrode 114 to deflect it, so that only the target ion species is selected. The ion beam B1 composed of the ion group of the target ion species is provided to the subsequent beamline unit 120. The ion beam B1 provided from the ion generation unit 110 to the beamline unit 120 is also called a "first ion beam."

[0015] The beamline unit 120 transports the first ion beam B1 provided from the ion generation unit 110 toward the implantation processing unit 130. The beamline unit 120 generates a second ion beam B2 by at least one of deflecting, accelerating, decelerating, shaping, and scanning the first ion beam B1. The beamline unit 120 includes, for example, a beam shaping unit 122 configured with a quadrupole lens device for shaping the first ion beam B1, a beam scanning unit 124 for reciprocatingly scanning the first ion beam B1 in a first direction, and a beam parallelizing unit 126 for parallelizing the first ion beam B1 reciprocatingly scanned in the first direction. The beamline unit 120 provides, for example, a scan beam reciprocatingly scanned in the first direction to the subsequent implantation processing unit 130. The ion beam B2 provided from the beamline unit 120 to the implantation processing unit 130 is also referred to as a "second ion beam."

[0016] The implantation processing unit 130 accommodates the semiconductor wafer W to be irradiated with the second ion beam B2 and holds the semiconductor wafer W to be irradiated with the second ion beam B2. The implantation processing unit 130 has a mechanical scanning mechanism 132 that holds the semiconductor wafer W and moves the semiconductor wafer W back and forth in a second direction. For example, the second ion beam B2 that has been reciprocally scanned in a first direction (width direction or lateral direction of the semiconductor wafer) in the beam line unit 120 is irradiated onto the semiconductor wafer W that is mechanically scanned in a second direction (vertical direction of the semiconductor wafer) in the implantation processing unit 130. The entire surface of the semiconductor wafer W is irradiated with the ion beam B2 by hybrid scanning that combines such beam scanning and mechanical scanning.

[0017] The vacuum exhaust unit 140 includes a vacuum exhaust system for providing a desired vacuum environment to the ion generation unit 110, the beam line unit 120, and the implantation processing unit 130. During an ion implantation process in which a semiconductor wafer is irradiated with an ion beam, the vacuum exhaust unit 140 provides a vacuum environment to each of the ion generation unit 110, the beam line unit 120, and the implantation processing unit 130. The vacuum environments provided to each of the ion generation unit 110, the beam line unit 120, and the implantation processing unit 130 may be different for each unit, or may be the same for each unit.

[0018] Various configurations of each part of the ion implantation apparatus of the present disclosure may be considered. The ion implantation apparatus of the present disclosure includes a vaporizer described below with reference to FIG. 2, and uses a solid sample as a source gas raw material. It should be noted that the ion implantation apparatus of the present disclosure may have other configurations as long as it includes a vaporizer for heating a solid sample to generate a source gas, and the configuration of each part of the ion implantation apparatus is not limited to the configuration shown in FIG.

[0019] According to one embodiment of the present disclosure, the ion generation unit 110 includes a vaporizer for supplying a source gas to the arc chamber of the ion source 112. The vaporizer is configured to heat and vaporize a solid sample that is a raw material of the source gas, and supply the vaporized source gas to the arc chamber. The vaporizer of the present disclosure uses a laser beam to heat the solid sample. Such a vaporizer will be described in detail with reference to FIG. 2.

[0020] 2 is a diagram showing a schematic configuration of vaporizer 10 according to an embodiment. Vaporizer 10 is a device for supplying a source gas to arc chamber 60 provided in interior 72 of vacuum vessel 70. Arc chamber 60 is configured to convert source gas supplied from nozzle 14 of vaporizer 10 into plasma to generate ions, and output ion beam 66.

[0021] The arc chamber 60 has an interior space 68 for generating a plasma P from a source gas. The arc chamber 60 may be included in, for example, the ion source 112 of the ion implanter 100 of Figure 1. The ion beam 66 is extracted from the interior space 68 of the arc chamber 60 by, for example, an extraction electrode 114.

[0022] Vaporizer 10 includes crucible 12, nozzle 14, and laser light source 16. In the drawings, the direction in which nozzle 14 extends from vaporizer 10 toward arc chamber 60 may be referred to as the axial direction. Also, the direction perpendicular to the axial direction may be referred to as the radial direction, and the direction surrounding the axial direction may be referred to as the circumferential direction.

[0023] The crucible 12 is provided in the interior 72 of a vacuum vessel 70. The crucible 12 is a vessel having a vaporization chamber 18, which is an internal space for heating and vaporizing a solid sample 62. The crucible 12 has a cylindrical side wall 20 and a bottom 22 for closing the end of the side wall 20. A lid 24 is removably attached to the open end of the crucible 12, and the vaporization chamber 18 is closed by the lid 24. The crucible 12 and the lid 24 are made of graphite.

[0024] The solid sample 62 contains an impurity element that is extracted as an ion beam 66. The solid sample 62 is solid at room temperature and pressure, and is in the form of a powder or particles. The solid sample 62 is heated in the vaporization chamber 18 to be vaporized and becomes a gas containing the impurity element, that is, a source gas. The type of impurity element contained in the solid sample 62 is not particularly limited, and may be, for example, aluminum (Al), indium (In), antimony (Sb), gallium (Ga), tin (Sn), magnesium (Mg), etc. The solid sample 62 may be a metal that is a simple substance of the impurity element, or may be a halogen compound such as a fluoride, chloride, bromide, or iodide that contains the impurity element, or may be a mixture of these.

[0025] The nozzle 14 is a tube for supplying the source gas generated in the vaporization chamber 18 to the arc chamber 60. The nozzle 14 is attached to the lid 24 and connects between the vaporization chamber 18 and the internal space 68 of the arc chamber 60. The nozzle 14 is located on the opposite side of the vaporization chamber 18 from the bottom 22 of the crucible 12. An electric heater 26 may be provided on the outer periphery of the nozzle 14. The electric heater 26 heats the nozzle 14 through which the gas passes, thereby preventing the source gas from cooling and solidifying inside the nozzle 14.

[0026] The laser light source 16 is provided outside 74 of the vacuum vessel 70. The laser light 64 generated by the laser light source 16 is irradiated to the crucible 12 provided in the interior 72 of the vacuum vessel 70 through a vacuum window 76 provided in the vacuum vessel 70. The vacuum window 76 is provided with a cooling flow passage 78 through which a fluid (such as cooling water) for cooling the vacuum window 76 passes.

[0027] The laser light source 16 is configured to generate ultraviolet, visible, or near-infrared laser light 64, for example, in a wavelength range of 200 nm to 2000 nm. The type of the laser light source 16 is not limited, but for example, a semiconductor laser that is small and easy to handle can be used. The laser light 64 may be continuous light or pulsed light. The output of the laser light source 16 is, for example, 0.1 kW to 10 kW, preferably 0.2 kW to 5 kW, and more preferably 0.3 kW to 2 kW. The laser light source 16 is not particularly limited as long as it outputs laser light 64 having an output and wavelength that can heat the crucible 12 at a temperature at least below the melting point of the material that constitutes the crucible 12. The temperature at which the crucible is heated by the laser light 64 is 100°C to 3000°C, preferably 500°C to 2000°C, and more preferably 700°C to 1500°C. As an example of the laser light source 16, a semiconductor laser that outputs 450 W of continuous light with a wavelength of 967 nm can be used.

[0028] Laser light 64 from the laser light source 16 is irradiated to the outside of the crucible 12, for example, to the bottom 22 of the crucible 12. The crucible 12 is heated by the laser light 64 irradiated to the bottom 22. Therefore, the closer to the bottom 22, the more easily the laser light 64 is heated, and the farther from the bottom 22, the less easily the laser light 64 is heated. For example, the side wall 20 and the lid 24 of the crucible 12 are less easily heated by the laser light 64. In this embodiment, at least one of a thermal reflector 30, a muffle 40, and a cover 50 is provided on the outside of the crucible 12 in order to efficiently heat the entire crucible 12.

[0029] The thermal reflector 30 is a cylindrical member provided on the outer periphery of the crucible 12. The thermal reflector 30 is provided so as to face the side wall 20 of the crucible 12 in the radial direction. The thermal reflector 30 reflects radiant heat from the crucible 12 and suppresses a decrease in temperature of the crucible 12. The thermal reflector 30 is made of a metal material, for example, a high-melting point metal such as tungsten (W), molybdenum (Mo), or tantalum (Ta) or an alloy thereof.

[0030] The thermal reflector 30 extends axially from the open end 34 to the fixed end 36. The axial length of the thermal reflector 30 is preferably greater than the axial length of the crucible 12, and is preferably provided so as to cover the entire side wall 20 of the crucible 12. The thermal reflector 30 has an opening 32 for passing the laser light 64. The radial dimension of the opening 32 of the thermal reflector 30 is greater than the radial dimension of the bottom 22 of the crucible 12.

[0031] The method for fixing the thermal reflector 30 is not particularly limited, and for example, it can be attached to a support member 28 arranged radially outward of the nozzle 14. The thermal reflector 30 is fixed, for example, by attaching a flange extending radially outward at a fixed end 36 to the support member 28. Note that a low thermal conductivity plate may be inserted between the thermal reflector 30 and the support member 28. The low thermal conductivity plate may be made of zirconia (ZrO2).

[0032] The muffle 40 is a cylindrical member provided on the outer periphery of the crucible 12. The muffle 40 is provided radially outward of the thermal reflector 30. Therefore, the thermal reflector 30 is disposed between the crucible 12 and the muffle 40. The muffle 40 is made of a ceramic material such as alumina (Al2O3), aluminum nitride (AlN), or boron nitride (BN). The muffle 40 is heated by absorbing radiant heat from the crucible 12 and the thermal reflector 30. By providing the muffle 40, the crucible 12 and the thermal reflector 30 are kept warm, and the temperature distribution of the crucible 12 is made uniform.

[0033] The muffle 40 extends in the axial direction from the open end 44 to the fixed end 46. The axial length of the muffle 40 is preferably greater than the axial length of the crucible 12 and is preferably greater than the axial length of the thermal reflector 30. The muffle 40 is preferably provided so as to cover the entire thermal reflector 30.

[0034] The muffle 40 has an opening 42 for passing the laser light 64. The opening 42 of the muffle 40 communicates with the opening 32 of the thermal reflector 30. The muffle 40 has a cap portion 48 extending radially inward from an opening end 44 toward the opening 42. The opening 42 is provided near the center of the cap portion 48. The radial dimension of the opening 42 of the muffle 40 is smaller than the radial dimension of the opening 32 of the thermal reflector 30. By providing the cap portion 48, the effect of keeping the crucible 12 and the thermal reflector 30 warm can be improved.

[0035] There is no particular limit to the method for fixing the muffle 40, but for example, like the thermal reflector 30, it can be fixed by attaching a flange extending radially outward at the fixed end 46 to the support member 28. In this case, the flange of the thermal reflector 30 is sandwiched and fixed between the flange of the muffle 40 and the support member 28.

[0036] The cover 50 is provided on the outside of the muffle 40 so as to cover the entire muffle 40. The cover 50 may cover the support member 28. The cover 50 reflects radiant heat from the muffle 40 and suppresses a temperature drop in the muffle 40. The cover 50 is made of a metal material, for example, stainless steel. The cover 50 has an opening 52 for passing the laser light 64. The opening 52 of the cover 50 communicates with the opening 42 of the muffle 40 and the opening 32 of the thermal reflector 30. The radial dimension of the opening 52 of the cover 50 is not particularly limited, but may be approximately the same as the radial dimension of the opening 42 of the muffle 40.

[0037] The vaporizer 10 may further include a temperature sensor (not shown). The temperature sensor may be provided to measure the temperature of the crucible 12, for example configured to measure the temperature of the side wall 20 of the crucible 12. The temperature sensor may be a thermocouple attached to the side wall 20 of the crucible 12. The thermal reflector 30, the muffle 40 and the cover 50 may be provided with a measurement opening (not shown) for passing a cable extending from the temperature sensor. The measurement openings provided in the thermal reflector 30, the muffle 40 and the cover 50 may be opened in the radial direction.

[0038] Next, the operation of the vaporization apparatus 10 will be described. First, a solid sample 62 is placed in the crucible 12 and the lid 24 is attached. The nozzle 14 is connected to the arc chamber 60, and a thermal reflector 30, a muffle 40, and a cover 50 are attached to cover the outer periphery of the crucible 12. After the interior 72 of the vacuum vessel 70 is depressurized, the crucible 12 is heated by irradiating it with a laser beam 64 from the laser source 16. The electric heater 26 may be turned on to heat the nozzle 14 at the same time. When the crucible 12 is heated to a predetermined temperature, the solid sample 62 is vaporized to generate a source gas. The generated source gas is taken out through the nozzle 14 and supplied to the arc chamber 60.

[0039] According to one example of this embodiment, by heating the crucible 12 in a cold state, i.e., at room temperature, with the laser light 64, the crucible 12 can be heated to 1000°C or higher within 5 minutes. In a conventional method of heating the crucible with an electric heater, it takes about 1 hour to heat the crucible to 1000°C or higher. According to this embodiment, the crucible 12 can be heated to a predetermined temperature in an extremely short time (within 5 minutes). This allows the waiting time for generating the source gas to be significantly shortened, thereby improving the productivity of the ion implantation process.

[0040] According to this embodiment, the time required to raise the crucible 12 to a predetermined temperature can be shortened by using the thermal reflector 30, the muffle 40, and the cover 50 in combination. For example, when the laser beam 64 with an output of 450 W is irradiated using only the muffle 40 and the cover 50 without using the thermal reflector 30, it takes about 5 minutes to raise the temperature of the crucible 12 to 1000°C. On the other hand, when the laser beam 64 with an output of 450 W is irradiated with the thermal reflector 30 added, the time required to raise the temperature of the crucible 12 to 1000°C is shortened to about 3 to 4 minutes.

[0041] In this embodiment, the crucible 12 is heated by irradiating the bottom 22 of the crucible 12 with the laser light 64, so that the nozzle 14, which is distant from the bottom 22, is less likely to be heated. According to this embodiment, the nozzle 14 can be helped to increase in temperature by providing the electric heater 26 around the nozzle 14. This makes it possible to prevent the gas from dropping in temperature and solidifying at the nozzle 14 when the vaporized gas is taken out through the nozzle 14, and the source gas can be stably supplied.

[0042] In the above embodiment, the laser light 64 is introduced from the outside 74 to the inside 72 of the vacuum vessel 70 through the vacuum window 76. In another embodiment, instead of providing the vacuum window 76, the laser light 64 may be introduced into the inside 72 of the vacuum vessel 70 using an optical fiber extending from the outside 74 to the inside 72 of the vacuum vessel 70. In yet another embodiment, the laser light source 16 may be disposed in the inside 72 of the vacuum vessel 70.

[0043] Next, a description will be given of an ion implantation method using the above-mentioned ion implantation apparatus 100. Here, an object to be irradiated with an ion beam is a semiconductor wafer, and an ion implantation step included in a method for manufacturing a semiconductor device will be described.

[0044] 3 is a flow chart showing an example of an ion implantation method according to an embodiment. First, a solid sample 62 is introduced into the internal space (vaporization chamber 18) of the crucible 12 (S10). For example, in an environment of room temperature and normal pressure, the solid sample 62 is placed in the internal space of the crucible 12, and a lid 24 provided with a nozzle 14 is attached to the crucible 12. Next, the crucible 12 with the solid sample 62 introduced therein is introduced into a vacuum environment (S12). For example, the nozzle 14 is connected to the arc chamber 60 to place the crucible 12 in the interior 72 of a vacuum vessel 70, and then the interior 72 of the vacuum vessel 70 is depressurized to create a vacuum state. The vacuum environment of the interior 72 of the vacuum vessel 70 is provided by, for example, a vacuum exhaust unit 140.

[0045] Next, the crucible 12 is heated by irradiating the outside of the crucible 12 with a laser beam 64 (S14). The laser beam 64 is not particularly limited as long as it has an output and wavelength capable of heating the crucible 12 at a temperature lower than the melting point of the material constituting the crucible 12. The wavelength of the laser beam 64 preferably includes ultraviolet, visible, or near-infrared light in a wavelength range of 200 nm to 2000 nm. The output of the laser beam 64 is, for example, 0.1 kW to 10 kW, preferably 0.2 kW to 5 kW, and more preferably 0.3 kW to 2 kW. Next, the solid sample is vaporized in the internal space of the heated crucible 12 to generate a source gas (S16). The temperature at which the crucible 12 is heated by the laser beam 64 is 100°C to 3000°C, preferably 500°C to 2000°C, and more preferably 700°C to 1500°C.

[0046] Next, the source gas generated in the internal space of the crucible 12 is introduced into the internal space of the arc chamber 60 (S18). For example, the source gas is supplied to the internal space 68 of the arc chamber 60 through the nozzle 14 connecting the internal space of the crucible 12 and the internal space 68 of the arc chamber 60. At this time, in order to prevent the source gas from cooling and adhering to the nozzle 14, the nozzle 14 may be heated by the electric heater 26. Next, the source gas is turned into plasma in the internal space 68 of the arc chamber 60 to generate ions (S20), and an ion beam 66 is extracted from the internal space 68 of the arc chamber 60 (S22). The extracted ion beam 66 is irradiated onto the semiconductor wafer W (S24). For example, only a specific ion species is selected from the ion beam 66 in the mass analysis unit 116, and at least one of deflection, acceleration, deceleration, shaping, and scanning is performed in the beam line unit 120, and then the semiconductor wafer W is irradiated by the implantation processing unit 130.

[0047] Although the present disclosure has been described above with reference to the above-mentioned embodiments, the present disclosure is not limited to the above-mentioned embodiments, and the configurations of the embodiments may be appropriately combined or substituted. In addition, it is possible to appropriately rearrange the combinations and processing orders in the embodiments based on the knowledge of a person skilled in the art, and to add modifications such as various design changes to the embodiments, and such modified embodiments may also be included in the scope of the ion implantation apparatus, ion implantation method, and semiconductor device manufacturing method according to the present disclosure. [Explanation of symbols]

[0048] 10...vaporization device, 12...crucible, 14...nozzle, 16...laser light source, 18...vaporization chamber (internal space), 26...electric heater, 30...thermal reflector, 40...muffle, 50...cover, 60...arc chamber, 62...solid sample, 64...laser light, 66...ion beam, 68...internal space, 70...vacuum vessel, 72...inside, 74...outside, 100...ion implantation device, 110...ion generation section, 120...beam line section, 130...implantation processing section, 140...vacuum exhaust section.

Claims

1. a crucible provided inside the vacuum vessel and having an internal space capable of accommodating a solid sample serving as a source gas; a laser light source provided outside the vacuum vessel and configured to irradiate the crucible with a laser light; an arc chamber having an internal space for generating ions by converting the source gas into plasma, the internal space from which an ion beam is extracted; a nozzle connecting the internal space of the crucible and the internal space of the arc chamber, for introducing a source gas vaporized in the internal space of the crucible into the internal space of the arc chamber.

2. The ion implantation apparatus according to claim 1 , further comprising a muffle provided on an outer periphery of the crucible and having an opening through which the laser light passes.

3. 3. The ion implantation apparatus according to claim 2, further comprising a thermal reflector provided between said crucible and said muffle, said thermal reflector having an opening through which said laser light passes.

4. 4. The ion implantation apparatus according to claim 2, further comprising a cover provided outside the muffle and having an opening through which the laser light passes.

5. The ion implanter of claim 1 , further comprising an electric heater for heating the nozzle.

6. The ion implantation apparatus according to claim 1 , wherein the laser light is irradiated onto a bottom portion of the crucible located on an opposite side to the nozzle.

7. 7. The ion implantation apparatus according to claim 1, wherein the laser light source has an output selected from a range of 0.1 kW or more and 10 kW or less, and outputs laser light having a wavelength range selected from a range of 200 nm or more and 2000 nm or less.

8. 8. An ion implanter as claimed in claim 1, wherein the crucible is constructed of graphite.

9. Introducing a solid sample containing at least one of aluminum, indium, antimony, tin, and magnesium into an internal space of a crucible; introducing the crucible containing the solid sample into a vacuum environment; irradiating the outside of the crucible with a laser beam having an output selected from the range of 0.1 kW to 10 kW and a wavelength range selected from the range of 200 nm to 2000 nm to heat the crucible to a temperature of 100° C. to 3000° C.; vaporizing the solid sample in an internal space of the crucible to generate a source gas; introducing the source gas into an interior space of an arc chamber; generating ions by converting a source gas into plasma in an internal space of the arc chamber; extracting an ion beam from an interior space of the arc chamber; and irradiating a semiconductor wafer with the ion beam.

10. Introducing a solid sample containing at least one of aluminum, indium, antimony, tin, and magnesium into an internal space of a crucible; introducing the crucible containing the solid sample into a vacuum environment; irradiating the outside of the crucible with a laser beam having an output selected from the range of 0.1 kW to 10 kW and a wavelength range selected from the range of 200 nm to 2000 nm to heat the crucible to a temperature of 100° C. to 3000° C.; vaporizing the solid sample in an internal space of the crucible to generate a source gas; introducing the source gas into an interior space of an arc chamber; generating ions by converting a source gas into plasma in an internal space of the arc chamber; extracting an ion beam from an interior space of the arc chamber; and irradiating a semiconductor wafer with the ion beam.

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