Display device and manufacturing method thereof

Abstract

To provide a display device which includes a light emitting portion and a laser portion and can selectively provide information depending on circumstances.SOLUTION: A display device of the present invention comprises: a substrate provided with a pixel including a light emitting portion and a laser portion, and a recessed portion correspondingly to the laser portion; a lower mirror layer provided in the recessed portion on a top surface of the substrate; a first light-emitting diode provided in the light emitting portion on the substrate; a second light-emitting diode provided in the laser portion on the lower mirror layer; and an upper mirror layer provided on the second light-emitting diode. Accordingly, the display device displays an image through the light emitting portion at ordinary times, and generates a laser beam through the laser portion in an emergency situation, the display device therefore helps life saving.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a display device, and more particularly to a display device including a light emitting portion and a laser portion. [Background technology]

[0002] Electroluminescent display devices, which are a type of flat panel display device, are self-emitting and therefore have a better viewing angle than liquid crystal display devices. Since they do not require a backlight, they can be made lighter and thinner, and are also advantageous in terms of power consumption.

[0003] In addition, electroluminescent displays can be driven by a low direct current voltage, have a fast response speed, are completely solid and therefore resistant to external shocks, can be used in a wide temperature range, and are inexpensive to manufacture.

[0004] The electroluminescence display device includes a number of pixels each having red, green, and blue sub-pixels, and displays various color images by selectively causing the red, green, and blue sub-pixels to emit light.

[0005] Recently, as such electroluminescent displays are applied to various fields, display devices having various functions are required. Summary of the Invention [Problem to be solved by the invention]

[0006] SUMMARY OF THE PRESENT EMBODIMENT The present invention provides a display device that includes a light emitting unit and a laser unit and is capable of selectively providing information according to circumstances. [Means for solving the problem]

[0007] In order to achieve the above object, the display device of the present invention includes a substrate having a pixel including a light emitting portion and a laser portion, the substrate having a recess corresponding to the laser portion; a lower mirror layer provided in the recess on the upper surface of the substrate; a first light emitting diode provided in the light emitting portion on an upper portion of the substrate; a second light emitting diode provided in the laser portion on an upper portion of the lower mirror layer; and an upper mirror layer provided on an upper portion of the second light emitting diode.

[0008] The recess has a curved shape.

[0009] The first light-emitting diode includes a first pixel electrode, a first light-emitting layer and a common electrode, and the second light-emitting diode includes a second pixel electrode, a second light-emitting layer and the common electrode, and a bank is provided between each of the first and second pixel electrodes and the common electrode, and each of the first and second light-emitting layers has a height of an edge adjacent to the bank that is higher than a height of a center.

[0010] The first and second light emitting layers are formed via solution processing.

[0011] The banks include a hydrophilic first bank and a hydrophobic second bank.

[0012] The pixel includes a number of sub-pixels, and the first and second light emitting layers of the sub-pixels adjacent to each other in one direction are connected to each other to be integrally formed.

[0013] The first pixel electrode reflects light, and the second pixel electrode transmits light.

[0014] The first pixel electrode has a multi-layer structure including at least one reflective electrode and at least one transparent electrode, and the second pixel electrode has a single layer structure including a transparent electrode.

[0015] The display device of the present invention further includes first and second transistors provided between the substrate and the first light emitting diode in the light emitting unit, and a third transistor provided between the substrate and the second light emitting diode in the laser unit.

[0016] The first transistor and the third transistor are respectively connected to first and second gate lines and are also connected together to one data line.

[0017] The lower mirror layer includes first and second lower refractive index layers having different refractive indices and stacked alternately, and the upper mirror layer includes first and second upper refractive index layers having different refractive indices and stacked alternately, and a difference in refractive index between the first and second lower refractive index layers is greater than a difference in refractive index between the first and second upper refractive index layers.

[0018] The pixel includes first, second and third sub-pixels, each of which includes at least one of the light emitting portions and at least one of the laser portions, and a thickness of the upper mirror layer of the second sub-pixel is smaller than a thickness of the upper mirror layer of the first sub-pixel and larger than a thickness of the upper mirror layer of the third sub-pixel.

[0019] The thickness of the lower mirror layer is greater than the thickness of the upper mirror layer. Effect of the Invention

[0020] In the present invention, each pixel includes a light emitting portion and a laser portion, and displays an image through the light emitting portion in normal times, and generates a laser beam through the laser portion in an emergency to help save lives.

[0021] In addition, by forming the light emitting layer through a solution process, a fine metal mask can be omitted, thereby reducing manufacturing costs, and a display device having a large area and high resolution can be realized. In addition, by applying a top emission type display device, the brightness can be improved, and accordingly, power consumption can be reduced because low power can be used.

[0022] In addition, by connecting the light emitting units and the light emitting layers of the laser units in the same color sub-pixel columns to each other and forming them as one unit, the deviation in the amount of droplets between nozzles can be minimized, and the thickness of the light emitting layers formed in the light emitting units and the laser units of each sub-pixel can be made uniform, thereby preventing unevenness and degradation of image quality of the display device.

[0023] In addition, since the pixels including the light emitting unit and the laser unit can be implemented through existing processes, the process can be optimized and production energy can be reduced. [Brief description of the drawings]

[0024] [Figure 1] 2 is a schematic equivalent circuit diagram of one sub-pixel of a display device according to an embodiment of the present invention; [Diagram 2] 1 is a schematic cross-sectional view of a display device according to an embodiment of the present invention. [Figure 3a] 2 is a cross-sectional view illustrating a schematic lower mirror layer according to an embodiment of the present invention; [Figure 3b] 2 is a cross-sectional view illustrating a schematic upper mirror layer according to an embodiment of the present invention; [Figure 4] 1 is a schematic plan view of a pixel arrangement structure of a display device according to a first embodiment of the present invention. [Diagram 5] 1 is a schematic plan view of a display device according to a first embodiment of the present invention. [Figure 6] 5 is a cross-sectional view corresponding to line II' in FIG. 4. [Figure 7] 5 is a cross-sectional view corresponding to line II-II' in FIG. [Figure 8] 4 is a graph showing a reflection band of a lower mirror layer according to an embodiment of the present invention. [Figure 9] FIG. 11 is a schematic cross-sectional view of a display device according to a second embodiment of the present invention. [Figure 10] FIG. 11 is a schematic plan view of a display device according to a third embodiment of the present invention. [Figure 11] 11 is a cross-sectional view corresponding to line III-III' in FIG. 10. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a display device according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

[0026] The display device according to the embodiment of the present invention displays an image using an electroluminescence display device. The display device using such an electroluminescence display device includes a number of pixels in a display area to display an image, and each pixel includes a number of sub-pixels, and each sub-pixel has substantially the same configuration. The configuration of such a sub-pixel will be described with reference to FIG. 1 and FIG. 2.

[0027] FIG. 1 is a schematic equivalent circuit diagram of one sub-pixel of a display device according to an embodiment of the present invention.

[0028] As shown in FIG. 1, a subpixel SP of a display device according to an embodiment of the present invention includes a light-emitting section EA and a laser section LA, where the light-emitting section EA includes a first transistor T1, a second transistor T2, a storage capacitor Cst, and a first light-emitting diode De1, and the laser section LA includes a third transistor T3 and a second light-emitting diode De2.

[0029] Here, the first, second and third transistors T1, T2 and T3 may be p-type transistors, but the embodiment of the present invention is not limited thereto, and instead, the first, second and third transistors T1, T2 and T3 may be n-type transistors.

[0030] Specifically, in the light emitting unit EA, a first gate line supplying a first gate signal Scan1 and a data line supplying a data signal Vdata cross each other, and a first transistor T1 is located at the intersection of the first gate line and the data line. The gate of the first transistor T1 is connected to the first gate line to receive the first gate signal Scan1, and the source of the first transistor T1 is connected to the data line to receive the data signal Vdata. Such a first transistor T1 may be a switching transistor.

[0031] In the light emitting unit EA, the gate of the second transistor T2 is connected to the drain of the first transistor T1 and the first capacitor electrode of the storage capacitor Cst, the source of the second transistor T2 is connected to a high potential line supplying a high potential voltage VDD and the second capacitor electrode of the storage capacitor Cst, and the drain of the second transistor T2 is connected to the anode of the first light emitting diode De1. Such a second transistor T2 may be a driving transistor.

[0032] Here, the positions of the source and drain of the first, second and third transistors T1, T2 and T3 are not limited to this, and the positions may be mutually interchangeable.

[0033] The cathode of the first light emitting diode De1 is connected to a low potential line that supplies a low potential voltage VSS Alternatively, the cathode of the first light emitting diode De1 may be connected to a ground voltage.

[0034] During the light-emitting period of one frame, the first transistor T1 is switched by the first gate signal Scan1 transmitted through the first gate line to supply the data signal Vdata transmitted through the data line to the gate of the second transistor T2, and the second transistor T2 is switched by the data signal Vdata to control the current of the first light-emitting diode De1.

[0035] At this time, the storage capacitor Cst maintains the charge corresponding to the data signal Vdata for one frame to keep the amount of current flowing through the first light emitting diode De1 constant, thereby keeping the gray scale displayed by the first light emitting diode De1 constant.

[0036] Meanwhile, in the light emitting unit EA, in order to compensate for changes in the mobility and / or threshold voltage of the second transistor T2 due to long-term operation, at least one transistor and / or at least one capacitor may be further added in addition to the first and second transistors T1, T2 and the storage capacitor Cst.

[0037] Next, in the laser unit LA, a second gate line supplying a second gate signal Scan2 crosses the data line, and a third transistor T3 is located at the crossing point of the second gate line and the data line. The gate of the third transistor T3 is connected to the second gate line to receive the second gate signal Scan2, and the source of the third transistor T3 is connected to the data line to receive the data signal Vdata. Such a third transistor T3 may be a switching transistor.

[0038] The anode of the second light emitting diode De2 is connected to the drain of the third transistor, and the cathode of the second light emitting diode De2 is connected to a low potential wiring supplying a low potential voltage VSS, similar to the cathode of the first light emitting diode De1. In contrast, when the cathode of the first light emitting diode De1 is connected to the ground voltage, the cathode of the second light emitting diode De2 is also connected to the ground voltage.

[0039] The third transistor T3 is switched by the second gate signal Scan2 transmitted through the second gate line to supply the data signal Vdata transmitted through the data line to the second light emitting diode De2, causing the second light emitting diode De2 to emit light.

[0040] The second light emitting diode De2 of the laser section LA is located between two dielectric mirrors to form a resonant structure.

[0041] Accordingly, in certain situations, such as emergency situations such as fires where it is difficult to ensure visibility, the light emitted from the second light emitting diode De2 is reflected between two dielectric mirrors and output as a laser beam. This laser beam is coherent, maximizing visibility, and it is easy to ensure visibility in the event of a fire, helping to save lives.

[0042] A cross-sectional structure of a display device including such a light emitting section and a laser section according to an embodiment of the present invention will be described in detail with reference to FIG.

[0043] 2 is a schematic cross-sectional view of a display device according to an embodiment of the present invention, illustrating one sub-pixel, in which the display device according to the embodiment of the present invention will be described as an example using a top emission type electroluminescence display device.

[0044] As shown in FIG. 2, the display device according to an embodiment of the present invention includes a substrate 100 having a sub-pixel SP including a light-emitting portion EA and a laser portion LA, first and second thin film transistors Tr1 and Tr2, first and second light-emitting diodes De1 and De2, a lower mirror layer 140, an upper mirror layer 160, a color filter 170, an encapsulation layer 180, and an opposing substrate 190.

[0045] Specifically, the sub-pixel SP provided on the substrate 100 includes an emission unit EA and a laser unit LA. The substrate 100 may be a glass substrate or a plastic substrate. For example, polyimide (PI) may be used as the plastic substrate, but is not limited thereto.

[0046] The substrate 100 has a recess 100a on its upper surface corresponding to the laser portion LA. The surface of the recess 100a may be curved.

[0047] A lower mirror layer 140 is formed in the laser portion LA on the substrate 100. The lower mirror layer 140 has a width greater than that of the recess 100a, and is located within the recess 100a and on the upper surface of the substrate 100.

[0048] The lower mirror layer 140 has a structure in which two layers having different refractive indices are alternately stacked, which will be described in detail later.

[0049] A planarization layer 101 is formed on the substrate 100 on which the lower mirror layer 140 is formed. The planarization layer 101 is positioned on substantially the entire surface of the substrate 100. The planarization layer 101 eliminates steps due to the lower mirror layer 140 and has a substantially flat upper surface.

[0050] The planarization layer 101 may be formed of an organic insulating material such as a photosensitive acrylic polymer (photo acryl) or benzocyclobutene.

[0051] A buffer layer 102 is formed on the planarization layer 101. The buffer layer 102 is located substantially over the entire surface of the substrate 100. The buffer layer 102 may be made of an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx) and may be composed of a single layer or multiple layers.

[0052] A patterned first semiconductor layer 112 is formed in the light emitting portion EA on the buffer layer 102, and a patterned second semiconductor layer 122 is formed in the laser portion LA.

[0053] The first and second semiconductor layers 112 and 122 may be made of an oxide semiconductor material. In this case, a light-shielding pattern (not shown) may be further formed under the first and second semiconductor layers 112 and 122. The light-shielding pattern may block light incident on the first and second semiconductor layers 112 and 122 to prevent the first and second semiconductor layers 112 and 122 from being deteriorated by light.

[0054] Alternatively, the first and second semiconductor layers 112 and 122 may be made of polycrystalline silicon. In this case, both ends of each of the first and second semiconductor layers 112 and 122 may be doped with impurities.

[0055] A gate insulating film 104 made of an insulating material is formed on the first and second semiconductor layers 112 and 122 substantially over the entire surface of the substrate 100. The gate insulating film 104 may be made of an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx).

[0056] Here, when the first and second semiconductor layers 112, 122 are made of an oxide semiconductor material, the gate insulating film 104 may be made of silicon oxide (SiOx). Conversely, when the first and second semiconductor layers 112, 122 are made of polycrystalline silicon, the gate insulating film 104 may be made of silicon oxide (SiOx) or silicon nitride (SiNx).

[0057] First and second gate electrodes 114 and 124 made of a conductive material such as metal are formed on the gate insulating film 104 corresponding to the first and second semiconductor layers 112 and 122, respectively.

[0058] The first and second gate electrodes 114, 124 may be formed of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), or an alloy thereof, and may have a single layer or a multi-layer structure. As an example, the first and second gate electrodes 114, 124 may have a bilayer structure including a lower layer of molybdenum-titanium alloy (MoTi) and an upper layer of copper (Cu), and the thickness of the upper layer may be thicker than the thickness of the lower layer. However, the embodiment of the present invention is not limited thereto.

[0059] In addition, first and second gate wirings (not shown) may be formed on the gate insulating film 104. The first and second gate wirings may be connected to the first and second gate electrodes 114 and 124, respectively, and may extend in a first direction. Meanwhile, in the embodiment of the present invention, the gate insulating film 104 is formed on the entire surface of the substrate 100, but the gate insulating film 104 may be patterned to have substantially the same shape as the first and second gate electrodes 114 and 124.

[0060] A passivation film 106 made of an insulating material is formed on the first and second gate electrodes 114 and 124 substantially over the entire surface of the substrate 100. The passivation film 106 may be made of an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx), or an organic insulating material such as a photosensitive acrylic polymer (photoacrylic) or benzocyclobutene.

[0061] The passivation film 106 has contact holes exposing the upper surfaces of both edges of the first and second semiconductor layers 112 and 122. Here, the contact holes may also be formed in the gate insulating film 104.

[0062] First source and drain electrodes 116, 118 and second source and drain electrodes 126, 128 are formed on the passivation film 106 using a conductive material such as metal. The first source and drain electrodes 116, 118 are disposed in the light emitting unit EA, and the second source and drain electrodes 126, 128 are disposed in the laser unit LA. In addition, a data line (not shown) and a power line (not shown) may be formed on the passivation film 106 to extend along a second direction perpendicular to the first direction.

[0063] The first source and drain electrodes 116, 118 and the second source and drain electrodes 126, 128 may be formed of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), or an alloy thereof, and may have a single layer or a multi-layer structure. As an example, the first source and drain electrodes 116, 118 and the second source and drain electrodes 126, 128 may have a bilayer structure including a lower layer of molybdenum-titanium alloy (MoTi) and an upper layer of copper (Cu), and the thickness of the upper layer may be greater than the thickness of the lower layer. Alternatively, the first source and drain electrodes 116, 118 and the second source and drain electrodes 126, 128 may have a triple layer structure.

[0064] The first source and drain electrodes 116 , 118 contact both ends of the first semiconductor layer 112 through contact holes in the passivation film 106 , and the second source and drain electrodes 126 , 128 contact both ends of the second semiconductor layer 122 through contact holes in the passivation film 106 .

[0065] The first semiconductor layer 112, the first gate electrode 114, and the first source and drain electrodes 116, 118 form a first thin film transistor Tr1, and the second semiconductor layer 122, the second gate electrode 124, and the second source and drain electrodes 126, 128 form a second thin film transistor Tr2.

[0066] The first thin film transistor Tr1 may be the second transistor T2 in FIG. 1, and the second thin film transistor Tr2 may be the third transistor T3 in FIG.

[0067] Also, one or more thin film transistors having the same structure as the first thin film transistor Tr1 may be further formed in the light emitting unit EA of each sub-pixel SP on the substrate 100, but the embodiment of the present invention is not limited thereto.

[0068] An overcoat layer 108 made of an insulating material is formed on the first source and drain electrodes 116, 118 and the second source and drain electrodes 126, 128 substantially over the entire surface of the substrate 100. The overcoat layer 108 may be made of an organic insulating material such as a photosensitive acrylic polymer (photoacrylic) or benzocyclobutene. The overcoat layer 108 has a substantially flat upper surface without steps due to underlying layers.

[0069] Meanwhile, an insulating film made of an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx) may be further formed under the overcoat layer 108, i.e., between the first and second thin film transistors Tr1 and Tr2 and the overcoat layer 108.

[0070] The overcoat layer 108 has first and second contact holes 108a, 108b that expose the first and second drain electrodes 118, 128, respectively.

[0071] First and second pixel electrodes 132 and 133 are formed on the overcoat layer 108. The first pixel electrode 132 is located in the light emitting portion EA and contacts the first drain electrode 118 through a first contact hole 108a. The second pixel electrode 133 is located in the laser portion LA and contacts the second drain electrode 128 through a second contact hole 108b.

[0072] The first and second pixel electrodes 132 and 133 may be made of a conductive material having a relatively high work function. The first and second pixel electrodes 132 and 133 may include a transparent electrode, and for example, the transparent electrode may be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0073] Here, the first pixel electrode 132 can reflect light, and the second pixel electrode 133 can transmit light. The first pixel electrode 132 may include a transparent electrode and a reflective electrode, and the second pixel electrode 133 may include a transparent electrode but not a reflective electrode.

[0074] Therefore, the first pixel electrode 132 may have a multi-layer structure. For example, the first pixel electrode 132 may have a triple-layer structure in which a first layer 132a, a second layer 132b, and a third layer 132c are stacked. Here, the first layer 132a and the third layer 132c may be transparent electrodes, and the second layer 132b may be a reflective electrode. Each of the first layer 132a and the third layer 132c may be made of a transparent conductive material such as ITO or IZO. Also, the second layer 132b may be made of a metal material having a relatively high reflectance, such as aluminum (Al), silver (Ag), molybdenum (Mo), or an alloy thereof. Here, the silver alloy may be silver-palladium-copper (Ag-Pd-Cu:APC).

[0075] Alternatively, the first pixel electrode 132 may have a double-layer structure in which a transparent electrode is disposed on top of a reflective electrode.

[0076] Meanwhile, the second pixel electrode 133 may have a single layer structure, for example, the second pixel electrode 133 may include one transparent electrode made of a transparent conductive material such as ITO or IZO.

[0077] A bank 150 made of an insulating material is formed on the first and second pixel electrodes 132, 133. The bank 150 overlaps the edges of the first and second pixel electrodes 132, 133 and covers the edges of the first and second pixel electrodes 132, 133. The bank 150 has first and second openings 150a, 150b that expose the first and second pixel electrodes 132, 133, respectively.

[0078] The bank 150 may be made of an organic insulating material such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, or a polyimide resin, but the embodiment of the present invention is not limited thereto, and instead, the bank 150 may be made of an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx).

[0079] The bank 150 overlaps the first and second thin film transistors Tr1 and Tr2. That is, the first and second thin film transistors Tr1 and Tr2 are located under the bank 150. However, the embodiment of the present invention is not limited thereto, and the first thin film transistor Tr1 may be disposed apart from the bank 150 and corresponding to the first opening 150a.

[0080] Next, first and second light emitting layers 134 and 135 are formed on the first and second pixel electrodes 132 and 133 exposed through the first and second openings 150a and 150b of the bank 150, respectively.

[0081] The first light-emitting layer 134 and the second light-emitting layer 135 may have the same composition and be made of the same material.

[0082] The first light emitting layer 134 and the second light emitting layer 135 may emit white light, but the embodiment of the present invention is not limited thereto, and the first light emitting layer 134 and the second light emitting layer 135 may emit at least one of red, green, and blue light.

[0083] Although not shown, each of the first light-emitting layer 134 and the second light-emitting layer 135 may include at least one hole auxiliary layer, at least one light-emitting material layer, and at least one electron auxiliary layer, which constitute one light-emitting unit. The light-emitting material layer may be made of at least one of red, green, and blue light-emitting materials. Such light-emitting materials may be organic light-emitting materials such as phosphorescent compounds or fluorescent compounds. However, the embodiment of the present invention is not limited thereto, and inorganic light-emitting materials such as quantum dots may be used.

[0084] The hole auxiliary layer may include at least one of a hole injection layer (HIL) and a hole transport layer (HTL), and the electron auxiliary layer may include at least one of an electron injection layer (EIL) and an electron transport layer (ETL).

[0085] The first and second light emitting layers 134 and 135 are formed by a solution process. Accordingly, the process can be simplified to provide a display device with a large area and high resolution. The solution process can be, but is not limited to, a spin coating method, an inkjet printing method, or a screen printing method.

[0086] Here, when the solution is dried, there is a difference in the evaporation rate of the solvent between the portion adjacent to the bank 150 and other portions. That is, the evaporation rate of the solvent is faster near the bank 150 than other portions, and therefore, the height of each of the first emission layer 134 and the second emission layer 135 near the bank 150 may become higher as they approach the bank 150.

[0087] Meanwhile, in the first light emitting layer 134 and the second light emitting layer 135, the electronic auxiliary layer may be formed through a thermal evaporation process. At this time, the electronic auxiliary layer may be formed substantially over the entire surface of the substrate 100.

[0088] A common electrode 136 is formed on the first light emitting layer 134 and the second light emitting layer 135 substantially over the entire surface of the substrate 100. That is, the common electrode 136 is formed not only on the light emitting portion EA but also on the laser portion LA.

[0089] Such a common electrode 136 may be in contact with the top and side surfaces of the bank 150. Alternatively, when the electronic auxiliary layers of the first and second light emitting layers 134 and 135 are integrally disposed over substantially the entire surface of the substrate 100, the common electrode 136 may be in contact with the electronic auxiliary layer on the top of the bank 150.

[0090] The common electrode 136 may be made of a conductive material having a relatively low work function. For example, the common electrode 136 may be made of aluminum (Al), magnesium (Mg), silver (Ag), gold (Au), or an alloy thereof. In this case, the common electrode 136 has a relatively thin thickness so that light from the first and second light emitting layers 134 and 135 can be transmitted therethrough. For example, the common electrode 136 may have a thickness of 5 to 10 nm, but the embodiment of the present invention is not limited thereto.

[0091] Alternatively, the common electrode 136 may be formed of a transparent conductive material such as indium-gallium-oxide (IGO).

[0092] The first pixel electrode 132, the first light emitting layer 134, and the common electrode 136 of the light emitting section EA form a first light emitting diode De1, and the second pixel electrode 133, the second light emitting layer 135, and the common electrode 136 of the laser section LA form a second light emitting diode De2.

[0093] Next, an upper mirror layer 160 is disposed on the common electrode 136 of the laser section EA. That is, the upper mirror layer 160 is disposed on the second light emitting diode De2. The upper mirror layer 160 is not provided in the light emitting section EA.

[0094] The upper mirror layer 160 has a structure in which two layers having different refractive indices are alternately stacked, which will be described in detail later.

[0095] An encapsulation layer 180 is provided on the common electrode 136 of the light emitting section EA and the upper mirror layer 160 of the laser section LA, substantially on the entire surface of the substrate 100 .

[0096] The encapsulation layer 180 may be a single layer of an inorganic insulating material or an organic insulating material, or may be a multi-layer of an inorganic insulating material and an organic insulating material. When the encapsulation layer 180 is a multi-layer, the encapsulation layer 180 may include an organic insulating material layer and an inorganic insulating material layer, or an inorganic insulating material layer, an organic insulating material layer, and an inorganic insulating material layer, which are sequentially arranged.

[0097] For example, the encapsulation layer 180 may include an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx), or an organic insulating material such as an acrylic resin or an epoxy resin, although embodiments of the present invention are not limited thereto.

[0098] Although not shown, a capping layer and a protective layer may be sequentially provided on substantially the entire surface of the substrate 100 between the encapsulation layer 180 and the common electrode 136 and / or between the encapsulation layer 180 and the upper mirror layer 160.

[0099] The cap layer may be formed of an insulating material having a relatively high refractive index, and the wavelength of light traveling along the cap layer may be amplified by surface plasma resonance, thereby increasing the peak intensity and improving the optical efficiency. For example, the cap layer may be in the form of a single organic or inorganic film or an organic / inorganic laminated film.

[0100] In addition, the protective layer can protect the first and second light emitting diodes De1 and De2 by blocking moisture and / or oxygen from entering from the outside together with the encapsulation layer 180. Such a protective layer can be made of an inorganic insulating material such as aluminum oxide (AlOx), silicon oxide (SiOx), or silicon nitride (SiNx), but the embodiment of the present invention is not limited thereto.

[0101] A counter substrate 190 is disposed on top of the encapsulation layer 180. The counter substrate 190 is transparent and may have a smaller thickness than the substrate 100.

[0102] The counter substrate 190 may be a glass substrate or a plastic substrate, for example, polyimide (PI) may be used as the plastic substrate, but is not limited thereto.

[0103] Meanwhile, a color filter 170 is provided in the light emitting portion EA between the encapsulation layer 180 and the opposing substrate 190. The color filter 170 may be one of red, green, and blue filters. The color filter 170 may be provided on one surface of the opposing substrate 190, i.e., the surface facing the first light emitting diode De1.

[0104] Accordingly, the substrate 100 having the encapsulation layer 180 thereon may be bonded to an opposing substrate 190 having a color filter 170 thereon to form a display device.

[0105] In this manner, in the display device according to the embodiment of the present invention, each sub-pixel SP has an emitting unit EA and a laser unit LA, the emitting unit EA and the laser unit LA are provided with a first light emitting diode De1 and a second light emitting diode De2, respectively, and the laser unit LA is provided with a lower mirror layer 140 and an upper mirror layer 160, and an image is displayed through the emitting unit EA in a normal state, and a laser beam is generated through the laser unit LA to provide information in an emergency, thereby helping to save lives. At this time, the information provided through the laser unit LA may be an image or a character.

[0106] In addition, by forming at least a portion of the first and second emission layers 134 and 135 of each subpixel SP by a solution process, it is possible to omit a fine metal mask, thereby reducing manufacturing costs, and to realize a display device having a large area and high resolution.

[0107] Meanwhile, by providing a recess 100a having a curved surface on the substrate 100 and providing the lower mirror layer 140 in the recess 100a, the distance between the upper mirror layer 160 disposed on the upper part of the second light emitting layer 135 formed through a solution process and the lower mirror layer 140 can be made uniform.

[0108] The laser unit LA can be manufactured together with the light emitting unit EA and can be realized through the existing process, which has the effect of optimizing the process and saving production energy.

[0109] In addition, the display device according to the embodiment of the present invention is implemented as a top emission type, and a top emission type display device can have a wider effective light emitting area than a bottom emission type display device of the same area, thereby improving brightness and reducing power consumption.

[0110] The structures of the lower mirror layer 140 and the upper mirror layer 160 of the laser section LA will be described in detail with reference to FIGS. 3a and 3b.

[0111] FIG. 3a is a schematic cross-sectional view of a lower mirror layer according to an embodiment of the present invention, and FIG. 3b is a schematic cross-sectional view of an upper mirror layer according to an embodiment of the present invention.

[0112] As shown in FIG. 3a, the lower mirror layer 140 has different refractive indices and includes a number of first lower refractive index layers 142 and a number of second lower refractive index layers 144 that are alternately stacked.

[0113] The first lower refractive index layer 142 is a high refractive index layer having a relatively high refractive index, and the second lower refractive index layer 144 is a low refractive index layer having a relatively low refractive index. That is, the first lower refractive index layer 142 has a higher refractive index than the second lower refractive index layer 144.

[0114] For example, the first lower refractive index layer 142 may be made of TiO2, Ta2O5, ZrO2, or ZnS, and the second lower refractive index layer 144 may be made of SiO2, MgF2, Y2O3, or Al2O3.

[0115] In addition, the second lower refractive index layer 144 may be thicker than the first lower refractive index layer 142 .

[0116] The lower mirror layer 140 may include 10 to 20 sets, each set being made up of one first lower refractive index layer 142 and one second lower refractive index layer 144 .

[0117] The lower mirror layer 140 may include an odd number of layers. In this case, the number of the first lower refractive index layers 142 may be greater than the number of the second lower refractive index layers 144, and the uppermost layer and the lowermost layer of the lower mirror layer 140 may be the first lower refractive index layers 142.

[0118] However, the embodiment of the present invention is not limited thereto. Alternatively, the lower mirror layer 140 may include an even number of layers, and the number of the first lower refractive index layers 142 and the number of the second lower refractive index layers 144 may be the same.

[0119] Next, as shown in FIG. 3b, the upper mirror layer 160 has different refractive indices and includes a number of first upper refractive index layers 162 and a number of second upper refractive index layers 164 that are alternately stacked.

[0120] The first upper refractive index layer 162 is a high refractive index layer having a relatively high refractive index, and the second upper refractive index layer 164 is a low refractive index layer having a relatively low refractive index. That is, the first upper refractive index layer 162 has a higher refractive index than the second upper refractive index layer 164.

[0121] For example, the first upper refractive index layer 162 may be made of TiO2, Ta2O5, ZrO2, or ZnS, and the second upper refractive index layer 164 may be made of SiO2, MgF2, Y2O3, or Al2O3.

[0122] In addition, the second upper refractive index layer 164 may be thicker than the first upper refractive index layer 162 .

[0123] The upper mirror layer 160 may include 10 to 20 sets, each set being made up of one first upper refractive index layer 162 and one second upper refractive index layer 164 .

[0124] The upper mirror layer 160 may include an odd number of layers. In this case, the number of the first upper refractive index layers 162 may be greater than the number of the second upper refractive index layers 164, and the top and bottom layers of the upper mirror layer 160 may be the first upper refractive index layers 162.

[0125] However, the embodiment of the present invention is not limited thereto. Alternatively, the upper mirror layer 160 may include an even number of layers, and the number of the first upper refractive index layers 162 and the number of the second upper refractive index layers 164 may be the same.

[0126] The lower mirror layer 140, the upper mirror layer 160, and the second light emitting diode De2 therebetween constitute a laser element. That is, the lower mirror layer 140 and the upper mirror layer 160 form a resonator and reflect the light emitted from the second light emitting diode De2 to emit a laser beam.

[0127] At this time, the closer the reflectance of the lower mirror layer 140 and the upper mirror layer 160 is to 100%, the easier it is to generate laser oscillation.

[0128] The lower mirror layer 140 and the upper mirror layer 160 may have different reflectivities and thicknesses. Specifically, the reflectivity of the lower mirror layer 140 may be higher than the reflectivity of the upper mirror layer 160, and the thickness of the lower mirror layer 140 may be thicker than the thickness of the upper mirror layer 160.

[0129] In addition, the difference in refractive index between the first lower refractive index layer 142 and the second lower refractive index layer 144 of the lower mirror layer 140 may be larger than the difference in refractive index between the first upper refractive index layer 162 and the second upper refractive index layer 164 of the upper mirror layer 160 .

[0130] A pixel arrangement structure of a display device including such a light emitting unit and a laser unit according to an embodiment of the present invention will be described in detail with reference to FIG.

[0131] FIG. 4 is a schematic plan view of a display device according to a first embodiment of the present invention, focusing on a bank configuration, and will be described with reference to FIG.

[0132] 4, in the display device 1000 according to the first embodiment of the present invention, one pixel P includes an emission unit EA and a laser unit LA. In this case, one pixel P may include three emission units EA and three laser units LA.

[0133] More specifically, one pixel P includes first, second, and third subpixels SP1, SP2, and SP3 sequentially arranged along a first direction, which is the X direction. For example, the first, second, and third subpixels SP1, SP2, and SP3 may be red, green, and blue (R, G, B) subpixels, respectively. Each of the first, second, and third subpixels SP1, SP2, and SP3 may include a light emitting unit EA and a laser unit LA arranged along a second direction, which is the Y direction.

[0134] The light emitting portions EA of the first, second, and third subpixels SP1, SP2, and SP3 may have the same area, but the embodiment of the present invention is not limited thereto, and instead, the light emitting portions EA of the first, second, and third subpixels SP1, SP2, and SP3 may have different areas.

[0135] Also, in each of the first, second and third sub-pixels SP1, SP2 and SP3, the light emitting portion EA and the laser portion LA may have the same area. Alternatively, the area of ​​the laser portion LA may be smaller than the area of ​​the light emitting portion EA.

[0136] The light emitting units EA and laser units LA of the first, second and third subpixels SP1, SP2 and SP3 may be defined by banks 150. The banks 150 are disposed between the light emitting units EA, between the laser units LA and between the light emitting units EA and the laser units LA of the first, second and third subpixels SP1, SP2 and SP3 adjacent to each other. In addition, the banks 150 are disposed between the light emitting units EA and the laser units LA of the adjacent pixels P.

[0137] The bank 150 has first openings 150a corresponding to the light emitting portions EA of the first, second and third subpixels SP1, SP2 and SP3, respectively, and has second openings 150b corresponding to the laser portions LA of the first, second and third subpixels SP1, SP2 and SP3, respectively. That is, the bank 150 has three first openings 150a and three second openings 150b for one pixel P.

[0138] Although the first and second openings 150a and 150b are illustrated as defining an effective light-emitting area and having a rectangular shape with sharp corners, the present invention is not limited thereto, and the first and second openings 150a and 150b may have various shapes such as a rectangular shape with curved corners, a polygon other than a rectangular shape, or an ellipse.

[0139] As described above, each of the first, second and third sub-pixels SP1, SP2 and SP3 includes a first light emitting diode De1 in the light emitting unit EA and a second light emitting diode De2 in the laser unit LA. Accordingly, one pixel P includes three first light emitting diodes De1 and three second light emitting diodes De2.

[0140] Also, the first, second and third subpixels SP1, SP2 and SP3 include a lower mirror layer 140 and an upper mirror layer 160 in the laser portion LA. Here, the lower mirror layer 140 may be provided in one pattern corresponding to the laser portion LA of the first, second and third subpixels SP1, SP2 and SP3. On the other hand, the upper mirror layer 160 is provided in a pattern corresponding to the laser portion LA of the first, second and third subpixels SP1, SP2 and SP3, respectively, and includes first, second and third mirror layers 160a, 160b and 160c corresponding to the first, second and third subpixels SP1, SP2 and SP3, respectively.

[0141] The laser portions LA of the first, second, and third sub-pixels SP1, SP2, and SP3 can generate red, green, and blue (R, G, B) laser beams, respectively.

[0142] Meanwhile, although not shown, the light-emitting portions EA of the first, second and third sub-pixels SP1, SP2 and SP3 may be provided with the color filter 170 of FIG. 2, and the color filter 170 includes first, second and third color filters corresponding to the first, second and third sub-pixels SP1, SP2 and SP3, respectively.

[0143] The planar structure of the display device according to the first embodiment of the present invention will be described in detail with reference to FIG.

[0144] FIG. 5 is a schematic plan view of a display device according to a first embodiment of the present invention, illustrating one pixel, and will be described with reference to FIG.

[0145] 5, in the display device 1000 according to the first embodiment of the present invention, a first gate line GL1 and a second gate line GL2 extend along a first direction, which is the X direction, and three data lines DL and three first power lines PLd extend along a second direction, which is the Y direction, and cross each other to define a pixel P including first, second and third sub-pixels SP1, SP2 and SP3. The three data lines DL and the three first power lines PLd are alternately arranged along the first direction.

[0146] Each of the first, second, and third sub-pixels SP1, SP2, and SP3 may include a light emitting portion EA and a laser portion LA, and the light emitting portion EA and the laser portion LA may be arranged along the second direction.

[0147] In addition, the second power supply line PLs extends in the second direction and intersects with the first and second gate lines GL1 and GL2. One second power supply line PLs may be provided for one pixel P. For example, the second power supply line PLs may be provided on the left side of the first subpixel SP1.

[0148] Here, the first power supply wiring PLd may be a high-potential wiring that supplies the high-potential voltage VDD in FIG. 1, and the second power supply wiring PLs may be a low-potential wiring that supplies the low-potential voltage VSS in FIG.

[0149] The light emitting portion EA of each of the sub-pixels SP1, SP2, and SP3 includes a first transistor T1, a second transistor T2, a capacitor electrode CE, and a first pixel electrode PE1, and the laser portion LA of each of the sub-pixels SP1, SP2, and SP3 includes a third transistor T3 and a second pixel electrode PE2.

[0150] The first transistor T1 is located at an intersection of each data line DL and the first gate line GL1, and is connected to each data line DL and the first gate line GL1, and is also connected to a capacitor electrode CE.

[0151] The second transistor T2 is connected to the first power supply line PLd and the first pixel electrode PE1, and also to the capacitor electrode CE.

[0152] The capacitor electrode CE is connected to the first and second transistors T1 and T2 and overlaps with the first pixel electrode PE1 to form a storage capacitor. Alternatively, the capacitor electrode CE may overlap with a separate electrode connected to the first pixel electrode PE1 to form a storage capacitor.

[0153] The third transistor T3 is located at the intersection of each data line DL and the second gate line GL2, and is connected to each data line DL and the second gate line GL2, and is also connected to the second pixel electrode PE2.

[0154] Accordingly, in the display device 1000 according to the first embodiment of the present invention, one pixel P includes three first pixel electrodes PE1 and three second pixel electrodes PE2, and the first transistor T1 and the third transistor T3 are respectively connected to different first and second gate lines GL1 and GL2, and are also connected to the same data line DL.

[0155] The cross-sectional structures of the light emitting section and the laser section of the display device 1000 according to the first embodiment of the present invention will be described in detail with reference to FIGS.

[0156] 6 and 7 are schematic cross-sectional views of a display device according to a first embodiment of the present invention, where FIG. 6 illustrates a cross-section corresponding to line I-I' in FIG. 4, and FIG. 7 illustrates a cross-section corresponding to line II-II' in FIG. 4.

[0157] 6 and 7, the display device 1000 according to the first embodiment of the present invention includes at least one pixel P provided on a substrate 100, and the at least one pixel P includes first, second and third sub-pixels SP1, SP2 and SP3. Each of the first, second and third sub-pixels SP1, SP2 and SP3 has a light emitting portion EA and a laser portion LA.

[0158] Specifically, the upper surface of the substrate 100 is provided with recesses 100a. The recesses 100a are located corresponding to the laser portions LA of the first, second, and third subpixels SP1, SP2, and SP3. That is, the light-emitting portions EA of the first, second, and third subpixels SP1, SP2, and SP3 are not provided with recesses 100a. The upper surface of the recesses 100a may be curved.

[0159] A lower mirror layer 140 is located on the substrate 100 having the recesses 100a. The lower mirror layer 140 is located corresponding to the recesses 100a and is disposed inside the recesses 100a. The lower mirror layer 140 may also be disposed between the recesses 100a. Accordingly, the lower mirror layers 140 corresponding to the laser portions LA of the first, second and third sub-pixels SP1, SP2 and SP3 may be integrally provided.

[0160] Meanwhile, the lower mirror layer 140 may not be provided in the light emitting portion EA of the first, second, and third subpixels SP1, SP2, and SP3. Alternatively, the lower mirror layer 140 may be provided in the light emitting portion EA of the first, second, and third subpixels SP1, SP2, and SP3 and may be disposed substantially over the entire surface of the substrate 100.

[0161] As described above, the lower mirror layer 140 has a structure in which two layers having different refractive indices are alternately stacked. More specifically, the lower mirror layer 140 has a structure in which a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index are alternately stacked.

[0162] For example, the high refractive index layers may be made of TiO2, Ta2O5, ZrO2, or ZnS, and the low refractive index layers may be made of SiO2, MgF2, Y2O3, or Al2O3.

[0163] A planarization layer 101 is located on the substrate 100 in the light emitting portion EA of the first, second and third subpixels SP1, SP2 and SP3 and on the lower mirror layer 140 in the laser portion LA of the first, second and third subpixels SP1, SP2 and SP3. The planarization layer 101 is located substantially over the entire surface of the substrate 100 and has a substantially flat upper surface.

[0164] A buffer layer 102 is provided on the planarization layer 101, and a first thin film transistor Tr1, a second thin film transistor Tr2, a gate insulating film 104, a passivation film 106, and an overcoat layer 108 are sequentially formed on the buffer layer 102.

[0165] The first thin film transistor Tr1 is disposed in the light emitting portion EA of each of the first, second and third subpixels SP1, SP2 and SP3, and the second thin film transistor Tr2 is disposed in the laser portion LA of each of the first, second and third subpixels SP1, SP2 and SP3. The first and second thin film transistors Tr1 and Tr2 may have the same configuration as the first and second thin film transistors Tr1 and Tr2 shown in FIG. 2. That is, the first thin film transistor Tr1 includes a first semiconductor layer 112, a first gate electrode 114, a first source electrode 116 and a first drain electrode 118 shown in FIG. 2, and the second thin film transistor Tr2 includes a second semiconductor layer 122, a second gate electrode 124, a second source electrode 126 and a second drain electrode 128 shown in FIG. 2.

[0166] The overcoat layer 108 covers the first and second thin film transistors Tr1 and Tr2 and has a substantially flat upper surface.

[0167] The overcoat layer 108 has first and second contact holes 108a and 108b. The first contact hole 108a is disposed in the light emitting portion EA of each of the subpixels SP1, SP2, and SP3 to expose the drain electrode of the first thin film transistor Tr1, i.e., the first drain electrode 118 of FIG. 2, and the second contact hole 108b is disposed in the laser portion LA of each of the subpixels SP1, SP2, and SP3 to expose the drain electrode of the second thin film transistor Tr2, i.e., the second drain electrode 128 of FIG. 2.

[0168] A first pixel electrode 132 and a second pixel electrode 133 are disposed on the overcoat layer 108. The first pixel electrode 132 is disposed in the light emitting portion EA of each of the sub-pixels SP1, SP2, and SP3 and is connected to the first thin film transistor Tr1 through a first contact hole 108a, and the second pixel electrode 133 is disposed in the laser portion LA of each of the sub-pixels SP1, SP2, and SP3 and is connected to the second thin film transistor Tr2 through a second contact hole 108b.

[0169] The first pixel electrode 132 has a triple layer structure and includes a first layer 132a, a second layer 132b, and a third layer 132c, where the first layer 132a and the third layer 132c are transparent electrodes and the second layer 132b is a reflective electrode, whereas the second pixel electrode 133 has a single layer structure and includes one transparent electrode.

[0170] A bank 150 is provided on the first and second pixel electrodes 132, 133. The bank 150 covers the edges of the first and second pixel electrodes 132, 133, respectively, and has first and second openings 150a, 150b that expose the centers of the first and second pixel electrodes 132, 133, respectively. That is, the first openings 150a are provided in the light emitting portions EA of the sub-pixels SP1, SP2, SP3, and the second openings 150b are provided in the laser portions LA of the sub-pixels SP1, SP2, SP3.

[0171] A first emission layer 134 is provided on the upper part of the first pixel electrode 132 exposed through the first opening 150a in the emission portion EA of each of the sub-pixels SP1, SP2, and SP3, and a second emission layer 135 is provided on the upper part of the second pixel electrode 133 exposed through the second opening 150b in the laser portion LA of each of the sub-pixels SP1, SP2, and SP3.

[0172] The first light emitting layer 134 and the second light emitting layer 135 are formed through a solution process. The height of each of the first light emitting layer 134 and the second light emitting layer 135 may increase in the vicinity of the bank 150 as it approaches the bank 150.

[0173] The first and second light emitting layers 134, 135 may emit light of different colors in each of the subpixels SP1, SP2, and SP3. Specifically, the first and second light emitting layers 134, 135 of the first subpixel SP1 may emit red light, the first and second light emitting layers 134, 135 of the second subpixel SP2 may emit green light, and the first and second light emitting layers 134, 135 of the third subpixel SP3 may emit blue light.

[0174] In addition, the first and second light emitting layers 134, 135 may have different thicknesses in each of the subpixels SP1, SP2, and SP3. Specifically, the thickness of the first and second light emitting layers 134, 135 in the second subpixel SP2 may be smaller than the thickness of the first and second light emitting layers 134, 135 in the first subpixel SP1 and larger than the thickness of the first and second light emitting layers 134, 135 in the third subpixel SP3.

[0175] However, embodiments of the present invention are not limited thereto. Alternatively, the first light emitting layer 134 and the second light emitting layer 135 may have the same thickness in all the sub-pixels SP1, SP2, and SP3 and may emit white light.

[0176] A common electrode 136 is provided on the first and second light emitting layers 134 and 135. The common electrode 136 is located substantially over the entire surface of the substrate 100, and is disposed in both the light emitting portion EA and the laser portion LA of each of the sub-pixels SP1, SP2, and SP3.

[0177] The common electrode 136 may be transparent or semi-transparent to allow light emitted from the first and second light-emitting layers 134, 135 to pass therethrough.

[0178] Next, an upper mirror layer 160 is provided on the common electrode 136 in the laser portion LA of each of the sub-pixels SP1, SP2, and SP3.

[0179] As described above, the upper mirror layer 160 has a structure in which two layers having different refractive indices are alternately stacked. More specifically, the upper mirror layer 160 has a structure in which a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index are alternately stacked.

[0180] For example, the high refractive index layers may be made of TiO2, Ta2O5, ZrO2, or ZnS, and the low refractive index layers may be made of SiO2, MgF2, Y2O3, or Al2O3.

[0181] The upper mirror layer 160 includes first, second, and third mirror layers 160a, 160b, and 160c corresponding to the first, second, and third sub-pixels SP1, SP2, and SP3, respectively. The first, second, and third mirror layers 160a, 160b, and 160c have different thicknesses. For example, the thickness of the second mirror layer 160b may be less than the thickness of the first mirror layer 160a and greater than the thickness of the third mirror layer 160c.

[0182] At this time, the thickness of the first mirror layer 160a is smaller than the thickness of the lower mirror layer 140. Therefore, the thicknesses of the first, second and third mirror layers 160a, 160b and 160c are each smaller than the thickness of the lower mirror layer 140.

[0183] Also, the difference in refractive index between the high and low refractive index layers of the lower mirror layer 140 is greater than the difference in refractive index between the high and low refractive index layers of the upper mirror layer 160, which will be described in detail later.

[0184] Next, an encapsulation layer 180 is provided on the common electrode 136 of the light emitting portion EA of each of the sub-pixels SP1, SP2, and SP3 and on the upper mirror layer 160 of the laser portion LA of each of the sub-pixels SP1, SP2, and SP3. An opposing substrate 190 is provided on the encapsulation layer 180.

[0185] In addition, a color filter 170 is provided between the encapsulation layer 180 and the opposing substrate 190 in the light-emitting portion EA of each of the sub-pixels SP1, SP2, and SP3. The color filter 170 includes first, second, and third color filters 172, 174, and 176 corresponding to the first, second, and third sub-pixels SP1, SP2, and SP3, respectively. The first, second, and third color filters 172, 174, and 176 may be red, green, and blue filters, respectively.

[0186] On the other hand, when the first and second light emitting layers 134, 135 of the first, second and third sub-pixels SP1, SP2 and SP3 emit red, green and blue light, respectively, the color filter 170 may be omitted.

[0187] As described above, in the display device 1000 according to the first embodiment of the present invention, one pixel P has three light emitting units EA and three laser units LA corresponding to the first, second and third sub-pixels SP1, SP2 and SP3, respectively, and displays a color image through the light emitting units EA in normal situations and displays color information through the laser units LA in emergency situations.

[0188] In this case, the laser units LA of the first, second and third sub-pixels SP1, SP2 and SP3 may generate red, green and blue laser beams, respectively. To this end, the first, second and third mirror layers 160a, 160b and 160c of the upper mirror layer 160 may have different thicknesses. For example, the thickness of the second mirror layer 160b may be less than the thickness of the first mirror layer 160a and greater than the thickness of the third mirror layer 160c.

[0189] Meanwhile, the lower mirror layer 140 is provided in common to the laser portions LA of the first, second and third sub-pixels SP1, SP2 and SP3.

[0190] Accordingly, it is preferable that the lower mirror layer 140 is made of a combination of materials having a wide highly reflective wavelength band. In this case, the lower mirror layer 140 may be made of a combination of materials having a relatively large difference in refractive index, which will be described with reference to FIG.

[0191] FIG. 8 is a graph showing the reflection band of the lower mirror layer according to an embodiment of the present invention, along with Comparative Examples 1, 2, and 3, and will be described with reference to FIG.

[0192] Here, the difference in refractive index between the high refractive index layer and the low refractive index layer of the lower mirror layer in the embodiment (EM) of the present invention is larger than the difference in refractive index between the high refractive index layer and the low refractive index layer of the lower mirror layer in the comparative examples 1, 2, and 3 (COM1, COM2, COM3).

[0193] For example, in the embodiment (EM) of the present invention, the low refractive index layer of the lower mirror layer is made of SiO2 having a refractive index of about 1.5, and the high refractive index layer is made of TiO2 having a refractive index of about 2.25, based on a wavelength of 1000 nm. On the other hand, in the comparative examples 1, 2, and 3 (COM1, COM2, and COM3), the low refractive index layer of the lower mirror layer is made of SiO2, and the high refractive index layers are made of ZrO2 (n=2.04), Y2O3 (n=1.77), and Al2O3 (n=1.66), respectively. The high refractive index layers of the comparative examples 1, 2, and 3 (COM1, COM2, and COM3) have a lower refractive index than the high refractive index layer of the embodiment (EM) of the present invention.

[0194] As shown in FIG. 8, it can be seen that the reflection bandwidth of the lower mirror layer 140 according to the embodiment (EM) of the present invention is the widest, and that the reflection bandwidth becomes narrower as the difference in refractive index becomes smaller.

[0195] Therefore, by forming the high refractive index layer and the low refractive index layer of the lower mirror layer 140 using a combination of materials having a relatively large difference in refractive index, it can be commonly used for the first, second and third sub-pixels SP1, SP2 and SP3.

[0196] Accordingly, the difference in refractive index between the high and low refractive index layers of the lower mirror layer 140 is greater than the difference in refractive index between the high and low refractive index layers of the upper mirror layer 160 .

[0197] Also, it is preferable that the thickness of the lower mirror layer 140 is greater than that of the upper mirror layer 160. Specifically, the thickness of the second mirror layer 160b is less than that of the first mirror layer 160a and greater than that of the third mirror layer 160c, and the thickness of the lower mirror layer 140 may be greater than that of the first mirror layer 160a.

[0198] The thicknesses of the first, second and third mirror layers 160a, 160b and 160c of the lower mirror layer 140 and the upper mirror layer 160 may be within the range of several μm.

[0199] For example, the lower mirror layer 140 may have a high refractive index layer of TiO2 and a low refractive index layer of SiO2, and the upper mirror layer 160 may have a high refractive index layer of ZrO2 and a low refractive index layer of SiO2.

[0200] In this case, the thickness of the first mirror layer 160a of the upper mirror layer 160 may be about 1.8 μm when the red wavelength is 620 nm, the thickness of the second mirror layer 160b may be about 1.5 μm when the green wavelength is 532 nm, and the thickness of the third mirror layer 160c may be about 1.4 μm when the blue wavelength is 460 nm. Also, the thickness of the lower mirror layer 140 may be about 2 μm to 4 μm, preferably about 2 μm to 3 μm. However, the embodiment of the present invention is not limited thereto.

[0201] Although the above embodiment has been described with reference to the case where the bank 150 has a single layer structure, in another embodiment of the present invention, the bank may have a double layer structure. A display device according to the second embodiment of the present invention will now be described in detail with reference to FIG.

[0202] 9 is a schematic cross-sectional view of a display device according to a second embodiment of the present invention, illustrating one subpixel. The display device according to the second embodiment of the present invention has substantially the same configuration as the first embodiment except for the bank, and the same components are given the same reference numerals, and the description thereof will be omitted or simplified.

[0203] As shown in FIG. 9, a display device 2000 according to a second embodiment of the present invention includes a sub-pixel SP disposed on a substrate 100 and having a light emitting portion EA and a laser portion LA.

[0204] The light emitting section EA includes a first thin film transistor Tr1, a first light emitting diode De1, and a color filter 170, and the laser section LA includes a second thin film transistor Tr2, a second light emitting diode De2, a lower mirror layer 140, and an upper mirror layer 160.

[0205] The second thin film transistor Tr2 and the second light emitting diode De2 are disposed between the lower mirror layer 140 and the upper mirror layer 160, and the lower mirror layer 140 is disposed in a recess 100a provided on the upper surface of the substrate 100.

[0206] The first light emitting diode De 1 includes a first pixel electrode 132 , a first light emitting layer 134 and a common electrode 136 , and the second light emitting diode De 2 includes a second pixel electrode 133 , a second light emitting layer 135 and a common electrode 136 .

[0207] A bank 250 is located between the first pixel electrode 132 and the common electrode 136 and between the second pixel electrode 133 and the common electrode 136 .

[0208] The bank 250 has first and second openings 250 a , 250 b exposing the first and second pixel electrodes 132 , 133 , respectively, and includes a first bank 252 and a second bank 254 on top of the first bank 252 .

[0209] Here, the first bank 252 overlaps and contacts the edges of the first and second pixel electrodes 132 and 133. The first bank 252 contacts the top and side surfaces of the first and second pixel electrodes 132 and 133.

[0210] The first bank 252 may have hydrophilic properties. The first bank 252 may be made of a material having hydrophilic properties, for example, an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx). Alternatively, the first bank 252 may be made of polyimide.

[0211] The second bank 254 located on the top of the first bank 252 may have a narrower width than the first bank 252. Also, the thickness of the second bank 254 may be greater than the width of the first bank 252. However, the embodiment of the present invention is not limited thereto.

[0212] The second bank 254 may have hydrophobicity. In this case, at least the upper surface of the second bank 254 may be hydrophobic, and the side surface of the second bank 254 may be hydrophobic or hydrophilic. The second bank 254 may be made of an organic insulating material having hydrophobic properties. Alternatively, the second bank 254 may be made of an organic insulating material having hydrophilic properties and then subjected to a hydrophobic treatment.

[0213] As described above, in the display device 2000 according to the second embodiment of the present invention, the bank 250 is configured to have a double layer structure including the hydrophilic first bank 252 and the hydrophobic second bank 254, so that the ink can be uniformly spread in the first and second openings 250a, 250b when the first and second light emitting layers 134, 135 are formed through a solution process. Accordingly, the first and second light emitting layers 134, 135 having a more uniform thickness can be formed in the first and second openings 250a, 250b.

[0214] In the above embodiment, a pixel P has three light emitting units EA and three laser units LA, but the embodiment of the present invention is not limited thereto. In another embodiment, a pixel P may have three light emitting units EA and one laser unit LA. That is, the laser units LA of the first, second and third sub-pixels SP1, SP2 and SP3 of FIG. 4 may be connected to each other and integrally provided. Such a laser unit LA may generate a green laser beam.

[0215] In this case, the bank 150 may have three first openings 150a corresponding to the light emitting units EA, and one second opening 150b corresponding to the laser unit LA.

[0216] Accordingly, one pixel P may include three first light emitting diodes De1 and one second light emitting diode De2.

[0217] Meanwhile, in the display device according to the embodiment of the present invention, the light emitting layers of the sub-pixel columns of the same color may be connected to each other and integrally provided. The pixel arrangement structure of the display device according to the third embodiment of the present invention will be described in detail with reference to FIG.

[0218] Fig. 10 is a schematic plan view of a display device according to a third embodiment of the present invention, focusing on a bank configuration. Fig. 10 illustrates two pixels, and will be described with reference to Fig. 2. The display device according to the third embodiment of the present invention has substantially the same configuration as the first embodiment except for the bank, and the same reference numerals are given to the same configuration, and the description thereof will be omitted or simplified.

[0219] 10, in the display device 3000 according to the third embodiment of the present invention, each pixel P1, P2 includes a first, second, and third sub-pixel SP1, SP2, and SP3, and each of the first, second, and third sub-pixels SP1, SP2, and SP3 includes a light emitting unit EA and a laser unit LA. In this case, one pixel P1, P2 may include three light emitting units EA and three laser units LA.

[0220] More specifically, the first and second pixels P1, P2 are arranged along the second direction, which is the Y direction, and each pixel P1, P2 includes first, second, and third subpixels SP1, SP2, and SP3 arranged sequentially along the first direction, which is the X direction. As an example, the first, second, and third subpixels SP1, SP2, and SP3 may be red, green, and blue (R, G, B) subpixels, respectively. Each of the first, second, and third subpixels SP1, SP2, and SP3 may include a light emitting unit EA and a laser unit LA arranged along the second direction.

[0221] The light emitting portion EA and the laser portion LA of the first, second, and third sub-pixels SP1, SP2, and SP3 may be defined by the bank 350.

[0222] The bank 350 includes a first bank 352 which is hydrophilic and a second bank 354 which is hydrophobic.

[0223] More specifically, the first banks 352 are located between adjacent subpixels SP1, SP2, and SP3 of the same color along the second direction and between adjacent subpixels SP1, SP2, and SP3 of different colors along the first direction. The first banks 352 are also located between the light emitting units EA and the laser units LA of the subpixels SP1, SP2, and SP3. The first banks 352 may be formed to surround the effective light emitting areas of the light emitting units EA and the laser units EA of the subpixels SP1, SP2, and SP3.

[0224] However, the embodiment of the present invention is not limited thereto. Alternatively, the first bank 352 may be omitted between the sub-pixels SP1, SP2, and SP3 of different colors adjacent to each other along the first direction. That is, the first bank 352 may extend in the first direction and be located only between the sub-pixels SP1, SP2, and SP3 of the same color adjacent to each other along the second direction and between the light emitting portion EA and the laser portion LA of each sub-pixel SP1, SP2, and SP3.

[0225] A second bank 354 is formed to overlap the first bank 352. The second bank 354 has openings 350a corresponding to columns of subpixels SP1, SP2, and SP3 of the same color, and is located between subpixels SP1, SP2, and SP3 of different colors that are adjacent to each other in the first direction.

[0226] Accordingly, the opening 350a extends in the second direction, and the length in the second direction is longer than the length in the first direction, i.e., the width. The opening 350a has a short side parallel to the first direction and a long side parallel to the second direction. In this case, the second bank 354 between the subpixels SP1, SP2, and SP3 of different colors adjacent to each other along the first direction may have a narrower width than the first bank 352.

[0227] As described above, each of the first, second and third sub-pixels SP1, SP2 and SP3 includes a first light emitting diode De1 in the light emitting unit EA and a second light emitting diode De2 in the laser unit LA. Accordingly, each of the pixels P1 and P2 includes three first light emitting diodes De1 and three second light emitting diodes De2.

[0228] Also, the first, second and third subpixels SP1, SP2 and SP3 include a lower mirror layer 140 and an upper mirror layer 160 in the laser portion LA. Here, the lower mirror layer 140 may be provided in one pattern corresponding to the laser portion LA of the first, second and third subpixels SP1, SP2 and SP3. On the other hand, the upper mirror layer 160 is provided in a pattern corresponding to the laser portion LA of the first, second and third subpixels SP1, SP2 and SP3, respectively, and includes first, second and third mirror layers 160a, 160b and 160c corresponding to the first, second and third subpixels SP1, SP2 and SP3, respectively.

[0229] The laser portions LA of the first, second, and third sub-pixels SP1, SP2, and SP3 can generate red, green, and blue (R, G, B) laser beams, respectively.

[0230] On the other hand, although not shown, the light-emitting portions EA of the first, second and third subpixels SP1, SP2 and SP3 are provided with the color filter 170 of FIG. 2, and the color filter 170 includes first, second and third color filters corresponding to the first, second and third subpixels SP1, SP2 and SP3, respectively.

[0231] The cross-sectional structure of the light emitting unit EA and the laser unit LA of the display device 3000 according to the third embodiment of the present invention will be described in detail with reference to FIG.

[0232] Fig. 11 is a schematic cross-sectional view of a display device according to a third embodiment of the present invention, illustrating a cross section corresponding to line III-III' in Fig. 10, and will be described with reference to Fig. 10. The display device according to the third embodiment of the present invention has substantially the same configuration as the first embodiment except for the bank and the first and second emission layers, and the same components are denoted by the same reference numerals, and the description thereof will be omitted or simplified.

[0233] 11, a display device 3000 according to a third embodiment of the present invention includes first and second pixels P1 and P2 provided on a substrate 100, and each of the pixels P1 and P2 includes a number of sub-pixels, i.e., first, second and third sub-pixels SP1, SP2 and SP3. Each of the sub-pixels SP1, SP2 and SP3 has a light-emitting portion EA and a laser portion LA.

[0234] Specifically, a recess 100a is formed on the upper surface of the substrate 100 in correspondence with the laser portion LA, and a lower mirror layer 140 is positioned within the recess 100a. The lower mirror layer 140 may also be partially disposed on the upper surface of the substrate 100. A planarization layer 101 is formed on the lower mirror layer 140 to eliminate a step caused by the lower mirror layer 140.

[0235] A buffer layer 102 is provided on the planarization layer 101, and a first thin film transistor Tr1, a second thin film transistor Tr2, a gate insulating film 104, a passivation film 106, and an overcoat layer 108 are provided on the buffer layer 102, which are laminated in this order.

[0236] The first and second thin film transistors Tr1 and Tr2 are disposed in the light emitting section EA and the laser section LA, respectively, and an overcoat layer 108 is disposed on the first and second thin film transistors Tr1 and Tr2.

[0237] A first pixel electrode 132 and a second pixel electrode 133 are disposed on the overcoat layer 108. The first pixel electrode 132 is disposed in the light emitting portion EA and is connected to the first thin film transistor Tr1 through a first contact hole 108a, and the second pixel electrode 133 is disposed in the laser portion LA and is connected to the second thin film transistor Tr2 through a second contact hole 108b.

[0238] The first pixel electrode 132 may have a triple-layer structure including a transparent electrode and a reflective electrode, whereas the second pixel electrode 133 may have a single-layer structure including one transparent electrode, and the first pixel electrode 132 may be thicker than the second pixel electrode 133.

[0239] A bank 350 is provided on the first and second pixel electrodes 132 and 133. The bank 350 includes a first bank 352 and a second bank 354.

[0240] More specifically, a hydrophilic first bank 352 is disposed on the first and second pixel electrodes 132, 133. The first bank 352 overlaps the edges of the first and second pixel electrodes 132, 133, respectively, covers the edges of the first and second pixel electrodes 132, 133, respectively, and exposes the centers of the first and second pixel electrodes 132, 133, respectively.

[0241] The first banks 352 are formed between adjacent subpixels SP1, SP2, SP3 of the same color, between adjacent subpixels SP1, SP2, SP3 of different colors, and between the light emitting portion EA and the laser portion LA of each of the subpixels SP1, SP2, SP3. Alternatively, the first banks 352 may be omitted between adjacent subpixels SP1, SP2, SP3 of different colors.

[0242] The first bank 352 may be formed of a material having hydrophilic properties, for example, an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx). Alternatively, the first bank 352 may be formed of polyimide.

[0243] A hydrophobic second bank 354 is formed on the first bank 352. The second bank 354 is formed only between adjacent subpixels SP1, SP2, SP3 of different colors, and is not formed between adjacent subpixels SP1, SP2, SP3 of the same color or between the light emitting portion EA and the laser portion LA of each subpixel SP1, SP2, SP3.

[0244] The second bank 354 may have a thickness greater than that of the first bank 352. Also, the width of the second bank 354 may be narrower than the width of the first bank 352.

[0245] The second bank 354 has openings 350a corresponding to the columns of subpixels SP1, SP2, and SP3 of the same color, and the openings 350a expose the first pixel electrodes 132, the second pixel electrodes 133, and the first bank 352 between the first pixel electrodes 132 and the second pixel electrodes 133 of the columns of subpixels SP1, SP2, and SP3 of the same color.

[0246] The second bank 354 may be formed of an organic insulating material having hydrophobic properties, or alternatively, the second bank 354 may be formed of an organic material having hydrophilic properties and then subjected to a hydrophobic treatment.

[0247] Meanwhile, although the hydrophilic first bank 352 and the hydrophobic second bank 354 are described as being made of different materials, the embodiment of the present invention is not limited thereto. The hydrophilic first bank 352 and the hydrophobic second bank 354 may be made of the same material and formed integrally.

[0248] First and second light emitting layers 134 and 135 are formed on the first and second pixel electrodes 132 and 133 exposed through the openings 350a of the second banks 354 of the sub-pixels SP1, SP2, and SP3, respectively.

[0249] Here, the first and second light emitting layers 134, 135 of the first subpixel SP1 may be red (R) light emitting layers, the first and second light emitting layers 134, 135 of the second subpixel SP2 may be green (G) light emitting layers, and the first and second light emitting layers 134, 135 of the third subpixel SP3 may be blue (B) light emitting layers. The first and second light emitting layers 134, 135 of the first, second and third subpixels SP1, SP2 and SP3 may have different thicknesses. That is, the thicknesses of the first light emitting layers 134a, 134b and 134c of the light emitting units EA of the first, second and third subpixels SP1, SP2 and SP3 may be different from each other. Specifically, the thickness of the first and second light-emitting layers 134, 135 of the second subpixel SP2 may be smaller than the thickness of the first and second light-emitting layers 134, 135 of the first subpixel SP1, and may be larger than the thickness of the first and second light-emitting layers 134, 135 of the third subpixel SP3. Accordingly, the thickness of the first light-emitting layer 134b provided in the light-emitting unit EA of the second subpixel SP2 may be smaller than the thickness of the first light-emitting layer 134a provided in the light-emitting unit EA of the first subpixel SP1, and may be larger than the thickness of the first light-emitting layer 134c provided in the light-emitting unit EA of the third subpixel SP3.

[0250] Also, a light-emitting layer is formed on the first bank 352 located between adjacent subpixels SP1, SP2, SP3 of the same color and between the light-emitting unit EA and the laser unit LA of each subpixel SP1, SP2, SP3. That is, a light-emitting layer is formed on the first bank 352 located between the first subpixel SP1 of the first and second pixels P1 and P2 adjacent to each other in FIG. 11, and a light-emitting layer is also formed on the first bank 352 located between the light-emitting unit EA of the first subpixel SP1 of the first pixel P1 and the laser unit LA. The light-emitting layer on the top of the first bank 352 is connected to the first light-emitting layer 134 of the adjacent light-emitting unit EA and the second light-emitting layer 135 of the laser unit LA. That is, the light-emitting layer on the top of the first bank 352 in the first subpixel SP1 is connected to the adjacent first light-emitting layer 134a and second light-emitting layer 135.

[0251] Therefore, the first light-emitting layer 134 and the second light-emitting layer 135 of each sub-pixel SP1, SP2, SP3 are connected to each other and formed as one unit, and adjacent first light-emitting layers 134 and second light-emitting layers 135 provided in a column of sub-pixels SP1, SP2, SP3 of the same color are connected to each other and formed as one unit.

[0252] Here, the first light emitting layer 134 and the second light emitting layer 135 are formed through a solution process. Solutions dispensed through different nozzles on the light emitting unit EA and the laser unit LA corresponding to the same color subpixels SP1, SP2, and SP3 columns, for example, the first subpixel SP column, are connected to each other, and the solutions are dried to form the first and second light emitting layers 134 and 135. Accordingly, it is possible to minimize the deviation in the amount dispensed between the nozzles and to make the thickness of the thin film formed on the light emitting unit EA and the laser unit LA of each subpixel SP1, SP2, and SP3 uniform.

[0253] A common electrode 136 is provided on the first and second light emitting layers 134, 135 of each of the sub-pixels SP1, SP2, and SP3. The common electrode 136 is located substantially over the entire surface of the substrate 100, and may be disposed on both the light emitting portion EA and the laser portion LA of each of the sub-pixels SP1, SP2, and SP3.

[0254] In each of the sub-pixels SP1, SP2, and SP3, the first pixel electrode 132, the first light-emitting layer 134, and the common electrode 136 of the light-emitting section EA constitute a first light-emitting diode De1, and the second pixel electrode 133, the second light-emitting layer 135, and the common electrode 136 of the laser section LA constitute a second light-emitting diode De2.

[0255] Next, in each of the sub-pixels SP1, SP2, and SP3, an upper mirror layer 160 is provided on the common electrode 136 of the laser unit LA, that is, on the second light emitting diode De2 of the laser unit LA.

[0256] As described above, each of the lower mirror layer 140 and the upper mirror layer 160 has a structure in which high refractive index layers having a relatively high refractive index and low refractive index layers having a relatively low refractive index are alternately laminated.

[0257] For example, the high refractive index layers may be made of TiO2, Ta2O5, ZrO2, or ZnS, and the low refractive index layers may be made of SiO2, MgF2, Y2O3, or Al2O3.

[0258] In addition, the thickness of the upper mirror layer 160 may be smaller than that of the lower mirror layer 140, and the difference in refractive index between the high refractive index layer and the low refractive index layer of the lower mirror layer 140 may be larger than the difference in refractive index between the high refractive index layer and the low refractive index layer of the upper mirror layer 160.

[0259] Meanwhile, the lower mirror layer 140 and the upper mirror layer 160 may have a curved shape along a first direction, which is the X direction.

[0260] Next, in each of the sub-pixels SP1, SP2, and SP3, an encapsulation layer 180 is provided on the common electrode 136 of the light emitting section EA and on the upper mirror layer 160 of the laser section LA.

[0261] In addition, a color filter 170 is provided between the encapsulation layer 180 and the opposing substrate 190 in the light-emitting portion EA of each of the sub-pixels SP1, SP2, and SP3. The color filter 170 includes first, second, and third color filters 172, 174, and 176 corresponding to the first, second, and third sub-pixels SP1, SP2, and SP3, respectively. Such a color filter 170 may be omitted.

[0262] As described above, in the display device 3000 according to the third embodiment of the present invention, the first light emitting layer 134 and the second light emitting layer 135 provided in the sub-pixels SP1, SP2, and SP3 columns of the same color are connected to each other and formed as one unit, thereby minimizing deviation in the amount of droplets between nozzles during a solution process and making the thicknesses of the first light emitting layer 134 and the second light emitting layer 135 formed in each sub-pixel SP1, SP2, and SP3 uniform. As a result, unevenness caused by the non-uniform thickness of the first and second light emitting layers 134 and 135 can be prevented, and degradation of image quality of the display device can be prevented.

[0263] Although the present invention has been described above with reference to preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various modifications and variations of the present invention may be made without departing from the technical spirit and scope of the present invention as set forth in the following claims. [Explanation of symbols]

[0264] P: pixel SP: Subpixel EA: Light emitting part LA: Laser section 100: Substrate Tr1: first thin film transistor Tr2: second thin film transistor 140: Lower mirror layer 160: Upper mirror layer De1: First light emitting diode De2: second light emitting diode 170: Color filter

Claims

1. a substrate provided with pixels each including a light-emitting portion and a laser portion, the substrate having a recess corresponding to the laser portion; a lower mirror layer disposed in the recess on the upper surface of the substrate; A first light emitting diode provided in the light emitting portion on the upper portion of the substrate; a second light emitting diode provided in the laser unit on the upper side of the lower mirror layer; The display device further comprises an upper mirror layer disposed on the second light emitting diode.

2. The display device according to claim 1 , wherein the recess has a curved shape.

3. the first light emitting diode includes a first pixel electrode, a first light emitting layer and a common electrode; the second light emitting diode includes a second pixel electrode, a second light emitting layer and the common electrode; a bank is provided between each of the first and second pixel electrodes and the common electrode; The display device according to claim 1 , wherein each of the first and second light-emitting layers has an edge height adjacent to the bank that is higher than a center height.

4. 4. The display device according to claim 3, wherein the banks include a hydrophilic first bank and a hydrophobic second bank.

5. The pixel includes a plurality of sub-pixels, The display device of claim 4 , wherein the first and second emission layers of the sub-pixels adjacent in one direction are connected to each other and integrally formed.

6. The display device according to claim 3 , wherein the first pixel electrode is reflective and the second pixel electrode is transmissive.

7. 7. The display device of claim 6, wherein the first pixel electrode has a multi-layer structure including at least one reflective electrode and at least one transparent electrode, and the second pixel electrode has a single layer structure including a transparent electrode.

8. first and second transistors provided between the substrate and the first light emitting diode in the light emitting portion; The display device of claim 1 , further comprising a third transistor disposed between the substrate and the second light emitting diode in the laser portion.

9. 9. The display device of claim 8, wherein the first transistor and the third transistor are respectively connected to a first gate line and a second gate line, and are also connected together to one data line.

10. The lower mirror layer includes first and second lower refractive index layers having different refractive indices and stacked alternately, The upper mirror layer includes first and second upper refractive index layers having different refractive indices and stacked alternately, The display device of claim 1 , wherein a difference in refractive index between the first and second lower refractive index layers is greater than a difference in refractive index between the first and second upper refractive index layers.

11. The pixel includes first, second, and third sub-pixels, each of the first, second, and third sub-pixels including at least one of the light-emitting portion and at least one of the laser portion; The display device of claim 1 , wherein a thickness of the upper mirror layer of the second subpixel is smaller than a thickness of the upper mirror layer of the first subpixel and is larger than a thickness of the upper mirror layer of the third subpixel.

12. The display device of claim 1 , wherein the thickness of the lower mirror layer is greater than the thickness of the upper mirror layer.

13. A method for manufacturing a display device, the display device comprising: a substrate provided with pixels each including a light-emitting portion and a laser portion, the substrate having a recess corresponding to the laser portion; a lower mirror layer provided in the recess on the upper surface of the substrate; A first light emitting diode provided in the light emitting portion on the upper portion of the substrate; a second light emitting diode provided in the laser unit on the upper portion of the lower mirror layer; an upper mirror layer provided on an upper portion of the second light emitting diode; the first light emitting diode includes a first pixel electrode, a first light emitting layer and a common electrode; the second light emitting diode includes a second pixel electrode, a second light emitting layer and the common electrode; a bank is provided between each of the first and second pixel electrodes and the common electrode; The method of manufacturing a display device, the manufacturing method including a solution process for forming the first and second light-emitting layers.

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