Processing method and processing system

Abstract

The invention is a method of processing a polymeric substrate obtained by bonding together a first substrate and a second substrate. The method includes: acquiring layer information about the polymeric substrate; irradiating, with pulsed laser light, a laser absorption film formed at the interface between the first substrate and the second substrate, and forming an unbonded region where the bonding strength between the first substrate and the second substrate has been decreased; and separating the first substrate from the second substrate. The formation of the unbonded region involving modifying, on the basis of the acquired layer information and / or the radial direction location of the one focal point in the polymeric substrate, a temperature difference between a first temperature in a region directly below laser irradiation including one focal point of the laser light that is irradiated in pulses and a second temperature in a laser irradiation peripheral region formed between the one focal point and another focal point irradiated with the laser light next after the one focal point.

Description

[Technical field]

[0001] The present disclosure relates to a processing method and a processing system. [Background technology]

[0002] Patent document 1 discloses a substrate processing system having a modified layer forming device that forms a modified layer inside a first substrate along the boundary between the peripheral and central portions of a first substrate to be removed, in a laminated substrate formed by bonding a first substrate and a second substrate, and an edge removal device that removes the peripheral portion of the first substrate using the modified layer as a base point. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2019 / 176589 Summary of the Invention [Problem to be solved by the invention]

[0004] The technique according to the present disclosure appropriately removes part or all of the first substrate in a laminated substrate in which a first substrate and a second substrate are bonded together. [Means for solving the problem]

[0005] One aspect of the present disclosure is a method for processing an overlapped substrate in which a first substrate and a second substrate are bonded together, the method including: acquiring layer information of the overlapped substrate; irradiating a laser absorption film formed at an interface between the first substrate and the second substrate with a pulsed laser beam to form an unbonded region in which a bonding strength between the first substrate and the second substrate is reduced; and separating the first substrate from the second substrate, wherein, in forming the unbonded region, a temperature difference between a first temperature in a region directly below the laser beam irradiation including a focal point of the laser beam irradiated in a pulsed manner and a second temperature in a peripheral region of the laser beam irradiation formed between the focal point and another focal point to which the laser beam is irradiated next to the focal point is changed based on at least one of the acquired layer information or a radial position of the focal point on the overlapped substrate. Effect of the Invention

[0006] According to the present disclosure, in a laminated substrate in which a first substrate and a second substrate are bonded together, it is possible to appropriately remove a part or the whole of the first substrate. [Brief description of the drawings]

[0007] [Figure 1] FIG. 2 is a side view showing a configuration example of an overlapped wafer according to an embodiment. [Diagram 2] 1 is a plan view showing an outline of the configuration of a wafer processing system according to an embodiment of the present invention. [Diagram 3] FIG. 2 is a side view showing the outline of the configuration of an interface modification device. [Figure 4] FIG. 2 is an explanatory diagram showing main steps of wafer processing in the wafer processing system. [Diagram 5] FIG. 11 is a cross-sectional view showing the state of the overlapped wafer after the formation of the unbonded region. [Figure 6] FIG. 11 is an explanatory diagram showing a temperature distribution during irradiation of an interface laser light. [Figure 7] 1 is a table showing the peeling state of a first wafer under various conditions. [Figure 8A] FIG. 13 is an explanatory diagram showing another example of irradiation with interface laser light. [Figure 8B] FIG. 13 is an explanatory diagram showing another example of irradiation with interface laser light. [Figure 9A] FIG. 11 is a side view showing another configuration of the interface modification device. [Figure 9B] FIG. 11 is an explanatory diagram showing another configuration of the cooling mechanism. [Figure 9C] FIG. 11 is an explanatory diagram showing another configuration of the cooling mechanism. [Figure 10] FIG. 11 is an explanatory diagram showing another application example of the technology disclosed herein. [Figure 11A] FIG. 4 is an explanatory diagram of a laser shape of an interface laser light. [Figure 11B] 13A to 13C are explanatory diagrams illustrating examples of modified laser shapes of interface laser light. [Figure 11C] 13A to 13C are explanatory diagrams illustrating examples of modified laser shapes of interface laser light. [Figure 11D] 13A to 13C are explanatory diagrams illustrating examples of modified laser shapes of interface laser light. [Figure 12] FIG. 11 is a side view showing another example of the configuration of the overlapped wafer. [Figure 13] FIG. 2 is an explanatory diagram showing a state of a laminated wafer irradiated with laser light. [Figure 14] FIG. 2 is a flow diagram showing main steps of wafer processing in the wafer processing system. [Figure 15] FIG. 10 is an explanatory diagram showing the diffusion of heat generated in a laminated wafer. [Figure 16] FIG. 4 is an explanatory diagram showing the state of expansion of the first wafer due to irradiation with laser light. [Figure 17] FIG. 2 is an explanatory diagram showing a state of a laminated wafer irradiated with laser light. [Figure 18] FIG. 2 is an explanatory diagram showing how the first wafer and the laser absorbing film are peeled off. [Figure 19] FIG. 2 is an explanatory diagram showing how the first wafer and the laser absorbing film are peeled off. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] In the manufacturing process of semiconductor devices, in a laminated substrate in which a first substrate (a silicon substrate such as a semiconductor) having a plurality of devices such as electronic circuits formed on its surface and a second substrate are bonded together, the peripheral portion of the first substrate may be removed, i.e., edge trimming may be performed.

[0009] The edge trim of the first substrate is performed, for example, by using the substrate processing system disclosed in Patent Document 1. That is, a modified layer is formed by irradiating the inside of the first substrate with a laser beam, and the peripheral portion is removed from the first substrate using the modified layer as a base point. According to the substrate processing system described in Patent Document 1, a modified surface or a peeled surface is formed by irradiating the interface where the first substrate and the second substrate are bonded with a laser beam, thereby reducing the bonding strength between the first substrate and the second substrate at the peripheral portion, and appropriately removing the peripheral portion.

[0010] However, in the peripheral portion of the first substrate to be removed in the edge trimming, the bonding strength between the first substrate and the second substrate may not be appropriately reduced due to various factors such as the thickness and structure of the film formed at the interface between the first substrate and the second substrate. Specifically, when the bonding strength between the first substrate and the second substrate is reduced, the absorbing film formed at the interface is irradiated with laser light, which causes the absorbing film to absorb the light, thereby generating stress and causing peeling at the interface between the first substrate and the second substrate. However, if the thickness or structure of the absorbing film changes for each laminated substrate processed in the substrate processing system or within the surface of the laminated substrate processed in the substrate processing system, the amount of laser light absorbed by the absorbing film may change, and the bonding strength between the first substrate and the second substrate may not be appropriately reduced.

[0011] However, the present inventors have conducted extensive research into this issue and have found that the stress generated at the interface when the bonding strength between the first and second substrates is reduced depends on the substrate temperature when the interface is irradiated with laser light. In other words, they have found the possibility that the bonding strength between the first and second substrates can be appropriately reduced by controlling the temperature of the substrate irradiated with laser light, and the peripheral portion of the first substrate can be more appropriately removed.

[0012] The technology according to the present disclosure has been made based on the above findings, and in a laminated substrate in which a first substrate and a second substrate are bonded, a part or all of the first substrate is appropriately removed. Hereinafter, a wafer processing system and a wafer processing method according to the present embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and duplicated descriptions will be omitted.

[0013] In the wafer processing system 1 according to the present embodiment, which will be described later, a process is performed on an overlapped wafer T as an overlapped substrate in which a first wafer W as a first substrate and a second wafer S as a second substrate are bonded together, as shown in FIG. More specifically, as an example, in the overlapped wafer T in which the first wafer W and the second wafer S are bonded together, a peripheral portion We that is a part of the first wafer W is removed. Hereinafter, in the first wafer W, the surface that is bonded to the second wafer S is referred to as the front surface Wa, and the surface opposite to the front surface Wa is referred to as the back surface Wb. Similarly, in the second wafer S, the surface that is bonded to the first wafer W is referred to as the front surface Sa, and the surface opposite to the front surface Sa is referred to as the back surface Sb.

[0014] The first wafer W is a semiconductor wafer such as a silicon substrate, and a device layer Dw including a plurality of devices is formed on the surface Wa side. A laser absorbing film Fw is further formed on the device layer Dw, and the first wafer S is bonded to the second wafer S via the laser absorbing film Fw. The laser absorbing film Fw may be, for example, an oxide film (THOX film, SiO2 film, TEOS film), a SiC film, a SiCN film, or an adhesive. The peripheral portion We of the first wafer W is chamfered, and the cross section of the peripheral portion We becomes thinner toward its tip. The peripheral portion We is a portion to be removed in edge trimming described later, and is, for example, in the range of 0.5 mm to 3 mm in the radial direction from the outer end of the first wafer W.

[0015] The second wafer S has, for example, a device layer Ds and a bonding film Fs formed on its surface Sa, and is bonded to the first wafer W via the bonding film Fs. The peripheral portion of the second wafer S is chamfered. Note that the second wafer S does not need to be a device wafer on which a device layer Ds is formed, and may be, for example, a support wafer that supports the first wafer W. In such a case, the second wafer S functions as a protective material that protects the device layer of the first wafer W.

[0016] In the illustrated example, the first wafer W is bonded to the second wafer S via a laser absorbing film Fw, but a bonding film that reduces the bonding strength with the second wafer S may be formed on the surface of the first wafer W, and the bonding film may be used as the laser absorbing film.

[0017] 2, the wafer processing system 1 has a configuration in which a loading / unloading station 2 and a processing station 3 are integrally connected. In the loading / unloading station 2, for example, a cassette C capable of accommodating a plurality of overlapped wafers T is loaded and unloaded between the loading / unloading station 2 and the outside. The processing station 3 is equipped with various processing devices that perform desired processing on the overlapped wafers T.

[0018] The loading / unloading station 2 is provided with a cassette mounting stage 10 on which a cassette C capable of accommodating a plurality of overlapped wafers T is mounted. A wafer transport device 20 is provided adjacent to the cassette mounting stage 10 on the positive side of the X-axis of the cassette mounting stage 10. The wafer transport device 20 moves on a transport path 21 extending in the Y-axis direction, and is configured to be able to transport the overlapped wafers T between the cassette C on the cassette mounting stage 10 and a transition device 30 described below.

[0019] In the loading / unloading station 2, a transition device 30 for transferring the overlapped wafer T between the processing station 3 and the wafer transfer device 20 is provided adjacent to the wafer transfer device 20 on the positive side of the X-axis of the wafer transfer device 20.

[0020] In the processing station 3, a wafer transfer device 40, an interface modification device 50, an internal modification device 60, an edge removal device 70 and a cleaning device 80 are arranged.

[0021] The wafer transport device 40 is provided on the X-axis positive side of the transition device 30. The wafer transport device 40 is configured to be freely movable on a transport path 41 extending in the X-axis direction, and configured to be able to transport the overlapped wafer T to the transition device 30, the interface modification device 50, the internal modification device 60, the edge removal device 70, and the cleaning device 80 in the carry-in / out station 2.

[0022] The interface modification device 50 irradiates laser light (interface laser light, e.g., a CO2 laser) onto the laser absorption film Fw formed at the interface between the first wafer W and the second wafer S, thereby forming an unbonded area Ae in which the bonding strength between the first wafer W and the second wafer S is reduced.

[0023] 3, the interface modification apparatus 50 has a chuck 100 that holds the upper surface of the overlapped wafer T. The chuck 100 holds the back surface Sb of the second wafer S by suction.

[0024] The chuck 100 is supported by a slider table 102 via an air bearing 101. A rotation mechanism 103 is provided on the lower surface side of the slider table 102. The rotation mechanism 103 incorporates, for example, a motor as a drive source. The chuck 100 is configured to be rotatable about a θ-axis (vertical axis) via the air bearing 101 by the rotation mechanism 103. The slider table 102 is configured to be movable along a rail 105 extending in the Y-axis direction by a horizontal movement mechanism 104 provided on the lower surface side of the slider table 102. The rail 105 is provided on a base 106. The drive source of the horizontal movement mechanism 104 is not particularly limited, but for example, a linear motor is used.

[0025] A cooling mechanism 100a is provided inside the chuck 100 to cool the overlapped wafer T adsorbed and held by the chuck 100. The configuration of the cooling mechanism 100a is not particularly limited as long as it can appropriately cool the overlapped wafer T (particularly, the vicinity of the irradiated portion of the interface laser light), and for example, a Peltier element or the like can be used.

[0026] A laser irradiation system 110 is provided above the chuck 100. The laser irradiation system 110 has a laser head 111 and a lens 112. The lens 112 may be configured to be movable up and down by an elevator mechanism (not shown).

[0027] The laser head 111 has a laser oscillator (not shown) that oscillates a laser beam in a pulsed manner. That is, the laser beam irradiated from the laser irradiation system 110 to the laminated wafer T held on the chuck 100 is a so-called pulsed laser, and its power repeatedly changes between 0 (zero) and a maximum value. In this embodiment, the laser beam is a CO2 laser beam, and the wavelength of the CO2 laser beam is, for example, 8.9 μm to 11 μm. The laser head 111 may have other devices besides the laser oscillator, such as an amplifier.

[0028] The lens 112 is a cylindrical member, and irradiates laser light onto the laminated wafer T held by the chuck 100. The laser light emitted from the laser irradiation system 110 passes through the first wafer W, and is irradiated onto and absorbed by the laser absorbing film Fw.

[0029] In the illustrated example, the chuck 100 is configured to rotate relatively to the laser head 111 and to move horizontally by the rotation mechanism 103 and the horizontal movement mechanism 104, but the laser head 111 may be configured to rotate relatively to the chuck 100 and to move horizontally. Also, both the chuck 100 and the laser head 111 may be configured to rotate relatively to each other and to move horizontally.

[0030] The laser head 111 may further include a spatial light modulator (not shown). The spatial light modulator modulates and outputs the laser light. Specifically, the spatial light modulator can control the focal position and phase of the laser light, and can adjust the shape and number (number of branches) of the irradiated laser light. At this time, the branched and irradiated laser light is configured so that the output, shape, etc. of each branch can be adjusted. As the spatial light modulator, for example, LCOS (Liquid Crystal Silicon) can be selected.

[0031] The internal reforming device 60 irradiates the inside of the first wafer W with laser light (internal laser light, e.g., a YAG laser) to form a peripheral reformed layer M1 serving as a base point for separating the peripheral portion We, and divided reformed layers M2 serving as base points for dividing the peripheral portion We into smaller pieces. The configuration of the internal reforming device 60 is not particularly limited. In one example, the internal reforming device 60 includes a chuck that holds the overlapped wafer T on its upper surface, a rotation mechanism that rotates the chuck and the overlapped wafer (first wafer W) relatively, a movement mechanism that moves the chuck and the overlapped wafer (first wafer W) relatively in the horizontal direction, and a laser irradiation unit (laser head) that irradiates the internal laser light into the inside of the first wafer W held by the chuck.

[0032] The edge removal device 70 as a separation device removes the edge portion We of the first wafer W, i.e., performs edge trimming, using the edge modified layer M1 formed in the internal reforming device 60 as a base point. The edge trimming method can be selected arbitrarily. In one example, the edge removal device 70 may insert, for example, a wedge-shaped blade between the first wafer W and the second wafer S. Also, for example, an air blow or a water jet may be sprayed toward the edge portion We to apply an impact to the edge portion We.

[0033] The cleaning device 80 performs a cleaning process on the first wafer W and the second wafer S after the edge trimming by the edge removal device 70, and removes particles on these wafers. The cleaning method can be selected arbitrarily.

[0034] The above-described wafer processing system 1 is provided with a control device 90. The control device 90 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the laminated wafer T in the wafer processing system 1. The program storage unit also stores a program for controlling the operation of the drive systems of the above-described various processing devices and transport devices, and for realizing wafer processing, which will be described later, in the wafer processing system 1. The above-described program may be recorded in a computer-readable storage medium H and installed from the storage medium H to the control device 90. The above-described storage medium H may be temporary or non-temporary.

[0035] Next, a description will be given of wafer processing performed using the wafer processing system 1 configured as above. In this embodiment, the first wafer W and the second wafer S are bonded together to form an overlapped wafer T in advance.

[0036] First, the cassette C storing a plurality of overlapped wafers T is placed on the cassette placement table 10 of the carry-in / out station 2.

[0037] Next, the overlapped wafer T is taken out of the cassette C by the wafer transport device 20 and transported to the interface modification device 50 via the transition device 30 and the wafer transport device 40. In the interface modification device 50, the interface between the first wafer W and the second wafer S at the peripheral portion We (more specifically, the above-mentioned laser absorbing film Fw formed at the interface) is irradiated with pulsed interface laser light L2 while rotating and horizontally moving the overlapped wafer T (first wafer W). As a result, peeling occurs at the interface between the first wafer W and the second wafer S, as shown in FIG. 4(a).

[0038] In the interface modification device 50, peeling occurs at the interface between the first wafer W and the second wafer S in this manner, and an unbonded region Ae is formed in which the bonding strength between the first wafer W and the second wafer S is reduced. As a result, an annular unbonded region Ae and a bonded region Ac in which the first wafer W and the second wafer S are bonded are formed at the interface between the first wafer W and the second wafer S, as shown in Fig. 5, on the radial inside of the unbonded region Ae. In edge trimming, which will be described later, the peripheral portion We of the first wafer W, which is the object of removal, is removed, and the presence of the unbonded region Ae in this manner allows the peripheral portion We to be appropriately removed.

[0039] The method for forming the unbonded region Ae in the interface modification apparatus 50 will be described in detail later.

[0040] The overlapped wafer T with the unbonded region Ae formed therein is then transferred to the internal reforming device 60. In the internal reforming device 60, an internal laser light L1 is irradiated to the inside of the first wafer W as shown in FIG. 4(b) to form a peripheral reformed layer M1 and a divided reformed layer M2. The peripheral reformed layer M1 serves as a base point for removing the peripheral portion We in the edge trimming described below. The divided reformed layer M2 serves as a base point for dividing the peripheral portion We to be removed into small pieces. In the drawings used in the following explanation, the divided reformed layer M2 may be omitted in order to avoid complicating the illustration.

[0041] The overlapped wafer T in which the peripheral modified layer M1 and the divided modified layer M2 are formed inside the first wafer W is then transferred to the peripheral removal device 70 by the wafer transfer device 40. In the peripheral removal device 70, as shown in FIG. 4(c), the peripheral portion We of the first wafer W is removed, i.e., edge trimming is performed. At this time, the peripheral portion We is separated from the center portion (the radial inner side of the peripheral portion We) of the first wafer W using the peripheral modified layer M1 as a base point, and is completely separated from the second wafer S using the unbonded region Ae as a base point. At this time, the removed peripheral portion We is also divided into small pieces using the divided modified layer M2 as a base point.

[0042] In removing the peripheral edge portion We, for example, a wedge-shaped blade B (see FIG. 4(c)) may be inserted into the interface between the first wafer W and the second wafer S which form the overlapped wafer T.

[0043] The overlapped wafer T from which the peripheral portion We of the first wafer W has been removed is then transferred to the cleaning apparatus 80 by the wafer transfer apparatus 40. In the cleaning apparatus 80, the first wafer W from which the peripheral portion We has been removed and / or the second wafer S are cleaned.

[0044] In the cleaning apparatus 80, as shown in FIG. 4(d), for example, a cleaning laser light L3 may be irradiated onto the first wafer W and the second wafer S to modify and remove the irradiated portions of the laser light, thereby removing (cleaning) remaining particles, etc.

[0045] Thereafter, the laminated wafer T on which all the processes have been performed is transferred by the wafer transfer device 20 to the cassette C on the cassette mounting table 10 via the wafer transfer device 40 and the transition device 30. In this manner, a series of wafer processes in the wafer processing system 1 is completed.

[0046] 4(a) and 4(b), the peripheral modified layer M1 and the divided modified layer M2 are formed in the internal reforming device 60 after the unbonded region Ae is formed in the interface reforming device 50, but the order of wafer processing in the wafer processing system 1 is not limited to this. That is, the peripheral modified layer M1 and the divided modified layer M2 may be formed in the internal reforming device 60, and then the unbonded region Ae may be formed in the interface reforming device 50.

[0047] Next, a detailed method for forming the unbonded region Ae will be described with reference to the drawings.

[0048] As described above, the present inventors have found the possibility of more suitably forming the unbonded region Ae by controlling the temperature of the overlapped wafer T during irradiation with the interface laser light L2 in the interface modification apparatus 50. Therefore, in the wafer processing according to the present embodiment, the temperature of the overlapped wafer T is controlled under various conditions in the interface modification apparatus 50 to appropriately form the unbonded region Ae.

[0049] In the interface modification device 50, first, as layer information of the overlapped wafer T on which the unbonded region Ae is to be formed, for example, the thickness and structure of a layer (for example, the laser absorbing film Fw in this embodiment) forming the peeled surface of the first wafer W is obtained. The obtained layer information of the overlapped wafer T is output to the control device 90. The layer information of the overlapped wafer T may be obtained by the interface modification apparatus 50, or may be obtained in advance outside the interface modification apparatus 50. Further, the method of obtaining the layer information of the overlapped wafer T is not particularly limited, and for example, the layer information may be measured by a sensor or the like, or may be obtained by capturing an image of the overlapped wafer T by a camera or the like.

[0050] Once the layer information of the overlapped wafer T has been acquired, then, based on the acquired layer information, interface laser light L2 is irradiated to the inside of the overlapped wafer T held on the chuck 100, in this embodiment, to the laser absorption film Fw at a position corresponding to the peripheral portion We of the first wafer W to be removed, thereby forming an unbonded area Ae.

[0051] In the interface modification device 50, the laser irradiation system 110 irradiates the laser absorbing film Fw formed on the first wafer W with the interface laser light L2. The irradiated interface laser light L2 is absorbed by the laser absorbing film Fw. At this time, the laser absorbing film Fw accumulates energy by absorbing the interface laser light L2, and the temperature rises and the film expands. As a result, shear stress is generated at the interface between the first wafer W and the laser absorbing film Fw due to the expansion of the laser absorbing film Fw, and this causes peeling at the interface between the first wafer W and the second wafer S where the bonding strength is weak (the interface between the laser absorbing film Fw and the bonding film Fs in this embodiment). That is, at the irradiation position of the interface laser light L2, an unbonded area Ae where the bonding strength is reduced due to the peeling between the first wafer W and the second wafer S is formed.

[0052] Here, the interface laser light L2 is irradiated to the laser absorption film Fw in a pulsed manner at a substantially constant irradiation pitch Q (physical irradiation interval of the interface laser light L2) as shown in FIG. At this time, it is considered that the shear stress σ generated at the interface between the first wafer W and the laser absorbing film Fw increases as the temperature difference ΔT between the temperature T1 of the direct-below region R1 directly irradiated with the interface laser light L2 shown in Fig. 6 and the temperature T2 of the peripheral region R2 between one direct-below region R1 and another direct-below region R1 formed successively increases. In other words, it is considered that in the interface modification device 50, by controlling the formation operation of the unbonded region Ae so as to increase the temperature difference ΔT shown in Fig. 6, the peripheral portion We of the first wafer W can be appropriately removed in the edge trimming performed later by the peripheral removal device 70.

[0053] Therefore, in the interface modification apparatus 50 according to this embodiment, when the unbonded region Ae is formed, at least one of the following controls is executed by the control device 90.

[0054] The first control is a method of controlling the repetition frequency (hereinafter simply referred to as "frequency") of the interface laser light L2 with which the laser absorption film Fw is irradiated.

[0055] As described above, the temperature of the laser absorbing film Fw that absorbs the interface laser light L2 increases by accumulating energy. At this time, the temperature of the laser absorbing film Fw increases significantly in the region R1 directly below the irradiation of the interface laser light L2 as shown in Fig. 6, and the temperature of the peripheral region R2 also increases.

[0056] In this case, if the frequency of the interface laser light L2 is high, the interface laser light L2 for forming the other directly below region R1 is irradiated before the peripheral region R2 whose temperature has increased due to the formation of the one directly below region R1 is cooled. In other words, when the adjacent one directly below region R1 and the other directly below region R1 are continuously formed, the temperature T2 of the peripheral region R2 therebetween remains high, and there is a risk that the temperature difference ΔT cannot be secured.

[0057] Therefore, in this embodiment, the frequency of the interface laser light L2 is changed based on the layer information of the overlapped wafer T acquired prior to irradiation of the interface laser light L2. More specifically, the frequency of the interface laser light L2 irradiated to a portion that is recognized to be difficult to peel based on the layer information (for example, a portion where the laser absorbing film Fw is thick or a portion having a film type of the laser absorbing film Fw that is difficult to peel) is made smaller than that of other portions where peeling can be normally performed.

[0058] By lowering the frequency of the interface laser light L2 in this way, the temporal pulse interval of the interface laser light L2 becomes larger (for example, by halving the frequency of the interface laser light L2, the temporal pulse interval doubles). When the temporal pulse interval of the interface laser light L2 becomes longer, the amount of natural cooling of the peripheral region R2 during that pulse interval increases, thereby lowering the temperature T2 of the peripheral region R2 at the time of the next irradiation of the interface laser light L2, and the temperature difference ΔT shown in FIG. 6 can be increased.

[0059] In other words, according to the technology disclosed herein, the temperature difference ΔT is independently controlled between the portion where peeling is deemed difficult and the other portion where peeling can be performed normally, based on the layer information at the irradiation position of the interface laser light L2.

[0060] 7 is a table showing the peeling state of the first wafer W and the second wafer S when the unbonded region Ae is formed using the interface laser light L2 having a different frequency. In this example, the peeling state of the first wafer W and the second wafer S was confirmed when the frequency of the interface laser light L2 was set to 100 kHz and when the frequency was set to 50 kHz. In this example, the conditions other than the frequency of the interface laser light L2 (for example, the thickness and structure as layer information of the laser absorbing film Fw, the rotation speed of the overlapped wafer T, etc.) were the same.

[0061] As shown in FIG. 7, even when the interface laser light L2 is irradiated to the laser absorption film Fw having similar layer information with the similar irradiation pitch Q (see FIG. 6) and energy amount, it was found that the range of conditions under which the first wafer W and the second wafer S can be peeled off without any problems can be expanded by lowering the frequency. This is thought to be because, even when the interface laser light L2 is irradiated with the same irradiation pitch Q and energy amount, the cooling time of the peripheral region R2 increases due to the decrease in frequency, resulting in an increase in the temperature difference ΔT shown in Figure 6.

[0062] From the viewpoint of appropriately peeling the first wafer W and the second wafer S by forming the unbonded region Ae, it is desirable to control the irradiation pitch Q, which is the physical irradiation interval of the interface laser light L2, at a predetermined constant value. In other words, it is desirable to control the irradiation pitch Q to a constant value in the portion where peeling is difficult acquired based on the above-mentioned layer information and in the other portion where peeling can be normally performed. In view of this, in order to control the irradiation pitch Q of the interface laser light L2 to be approximately constant, it is desirable to appropriately change the rotation speed (corresponding to the circumferential irradiation pitch Q) and horizontal movement speed (corresponding to the radial irradiation pitch Q) of the overlapped wafer T according to the frequency of the interface laser light L2. More specifically, when the frequency of the interface laser light L2 is reduced, it is desirable to simultaneously reduce the rotation speed and movement speed of the overlapped wafer T and control so that the irradiation pitch Q of the interface laser light L2 is constant.

[0063] However, when the frequency of the interface laser light L2 is reduced (set to a low frequency) or appropriately changed in this way, the first wafer W and the second wafer S can be peeled off and the unbonded region Ae can be appropriately formed, but the time required to form the unbonded region Ae over the entire surface of the peripheral portion We increases. In other words, when controlling the frequency of the interface laser light L2 in the interface modification apparatus 50, there is a trade-off between appropriately forming the unbonded region Ae and improving the throughput related to the formation of the unbonded region Ae. In view of this, it is desirable to irradiate the interface laser light L2 at the minimum controllable frequency, taking into consideration the throughput in the interface modification apparatus 50. In this embodiment, the frequency of the interface laser light L2 is lowered only in the portion where it is deemed difficult to peel the first wafer W and the second wafer S, as described above, to appropriately form the unbonded region Ae, and the frequency of the interface laser light L2 is returned (to a high frequency) in the other portions where peeling can be normally performed, thereby suppressing a decrease in throughput.

[0064] In addition, it is presumed that the time required for the peripheral region R2, whose temperature has increased due to the formation of one direct below region R1, to be cooled to the temperature before irradiation with the interface laser light L2 is constant depending on the amount of energy of the interface laser light L2, regardless of the frequency of the interface laser light L2. In view of this, it is desirable to control the frequency of the interface laser light L2 so that the temporal pulse interval of the interface laser light L2 is approximately the same as or longer than the time required for the peripheral region R2 to be cooled to the temperature before irradiation with the interface laser light L2.

[0065] In addition, when the laser head 111 has the above-mentioned spatial light modulator (e.g., LCOS), the interface laser light L2 may be simultaneously irradiated to a plurality of different points of the laser absorbing film Fw in a planar view. At this time, in order to appropriately obtain the peeling effect of the first wafer W and the second wafer S caused by the above-mentioned temperature difference ΔT, it is desirable that the plurality of points (plurality of focusing point positions) in the surface of the laser absorbing film Fw to which the interface laser light L2 is simultaneously irradiated are arranged so as not to be adjacent to each other at least in the circumferential and radial directions in a planar view.

[0066] Specifically, as shown in Fig. 8A(a), for example, a plurality of (two in the illustrated example) interface laser beams L2 may be irradiated in the circumferential direction of the overlapped wafer T at an irradiation interval twice the irradiation pitch Q (see Fig. 6) (at an interval the size of one peripheral region R2 corresponding to one directly below region R1), to simultaneously form a plurality of directly below regions R1. Subsequently, as shown in Fig. 8A(b), the respective focus positions of the plurality of interface laser beams L2 are shifted in the circumferential direction by the irradiation pitch Q and continuously irradiated, to simultaneously form a plurality of other directly below regions R1, whereby the first wafer W and the second wafer S are peeled off simultaneously at a plurality of points of the laser absorbing film Fw in a plan view, and the throughput for forming the unbonded region Ae can be improved. At this time, by controlling the frequency of the interface laser light L2 based on the layer information of the overlapped wafer T as described above, the temperature of the peripheral region R2 between the multiple one direct-below regions R1 can be reduced when the multiple other direct-below regions R1 are formed. As a result, the temperature difference ΔT shown in Figure 6 can be increased, and the unbonded region Ae can be appropriately formed.

[0067] The arrangement of the multiple interface laser beams L2 irradiated simultaneously is not limited to the arrangement in which they are arranged at intervals in the circumferential direction shown in Fig. 8A, and as shown in Fig. 8B(a), multiple interface laser beams L2, in the illustrated example, two, may be arranged at intervals (twice the irradiation pitch Q) in the radial direction of the overlapped wafer T. Furthermore, for example, as shown in Fig. 8B(b), multiple interface laser beams L2, in the illustrated example, two, may be arranged at an irradiation interval of the irradiation pitch Q in both the radial direction and the circumferential direction of the overlapped wafer T, that is, so that multiple focusing points are arranged obliquely in a plan view.

[0068] In this embodiment, the positions of the multiple light focusing points are arranged so as not to be adjacent to each other at least in the circumferential and radial directions in a plan view of the laser absorption film Fw, and multiple interface laser beams L2 are irradiated simultaneously. This makes it possible to increase the temperature difference ΔT between the temperature T2 of the peripheral region R2 between the multiple directly below regions R1 and the multiple other directly below regions R1 that are continuously formed, and as a result, the unbonded regions Ae can be appropriately formed simultaneously at multiple points in a plan view, and the throughput related to the formation of the unbonded regions Ae can be improved.

[0069] The number of the laser beams L2 for interfaces irradiated simultaneously is not limited to two, and three or more laser beams L2 for interfaces may be irradiated simultaneously to the laser absorbing film Fw. In this case, the focal points of the three or more laser beams L2 for interfaces may be arranged at intervals in the circumferential direction, radial direction, or oblique direction of the overlapped wafer T in a plan view, or an arrangement in the circumferential direction, radial direction, or oblique direction may be combined.

[0070] The second control is a method of cooling the overlapped wafer T by a cooling mechanism 100a disposed inside the chuck 100.

[0071] As described above, it is considered that the shear stress σ occurring at the interface between the first wafer W and the laser absorbing film Fw increases as the temperature difference ΔT between the temperature T1 of the directly below region R1 and the temperature T2 of the peripheral region R2 increases. In view of this, the temperature T2 of the peripheral region R2 may be reduced by cooling the overlapped wafer T with the cooling mechanism 100a during irradiation with the interface laser light L2, thereby increasing the temperature difference ΔT shown in FIG.

[0072] In the example shown in FIG. 3, the cooling mechanism 100a is disposed inside the chuck 100, but the configuration and arrangement of the cooling mechanism 100a are not limited to this.

[0073] Specifically, instead of or in addition to arranging the cooling mechanism 100a inside the chuck 100, an air nozzle 100b may be arranged as a cooling mechanism for supplying cooling air to the front surface of the overlapped wafer T (the back surface Wb of the first wafer W) as shown in Fig. 9A. A cooling air supply source 113 is connected to the air nozzle 100b. Note that the temperature of the cooling air is not particularly limited as long as it can cool the overlapped wafer T and does not prevent the irradiation of the interface laser light L2, and may be, for example, room temperature, a low temperature below room temperature, or an extremely low temperature. When the overlapped wafer T is irradiated with the interface laser light L2, the air nozzle 100b supplies cooling air Air from above to the center of the overlapped wafer T, and uses centrifugal force to cool the entire surface of the overlapped wafer T. By cooling the overlapped wafer T in this way, the temperature T2 of the peripheral region R2 can be lowered, and the temperature difference ΔT shown in FIG.

[0074] In addition, when the cooling air Air is supplied locally to the peripheral region R2 in this manner, the irradiation position of the interface laser light L2 may be determined based on the supply position of the cooling air Air. In other words, the interface laser light L2 may be irradiated using the cooling air Air as a guide.

[0075] From the viewpoint of appropriately peeling the first wafer W and the second wafer S to form the unbonded region Ae, it is considered that it is sufficient to increase the temperature difference ΔT between at least the region R1 immediately below the irradiation of the interface laser light L2 and the peripheral region R2, as described above. In other words, it is not necessary to cool the entire surface of the overlapped wafer T as with the cooling mechanism 100a and the air nozzle 100b described above, and it is considered that the unbonded region Ae can be appropriately formed if at least the peripheral region R2 immediately below the irradiation of the interface laser light L2 can be cooled. From this viewpoint, a mechanism for locally cooling the peripheral region R2 may be provided instead of or in addition to the cooling mechanism 100a and the air nozzle 100b described above.

[0076] Specifically, for example, as shown in Fig. 9B, an air nozzle 100c may be disposed as a cooling mechanism that supplies cooling air Air toward the peripheral region R2 when the interface laser light L2 is irradiated onto the laminated wafer T. A cooling air supply source 114 is connected to the air nozzle 100c. This can reduce the temperature T2 of the peripheral region R2 and increase the temperature difference ΔT shown in Fig. 6.

[0077] The air nozzle 100c for locally cooling the peripheral region R2 may be configured integrally with a laser irradiation system 110 for irradiating the interface laser light L2 as shown in FIG. 9C.

[0078] In the interface modification apparatus 50 according to the present embodiment, at least one of the above controls is executed by the control device 90 to form an unbonded area Ae on the entire surface of the overlapped wafer T at a position corresponding to the peripheral edge portion We of the first wafer W to be removed.

[0079] According to this embodiment, when forming the unbonded region Ae, control is performed so as to increase the temperature difference ΔT between the temperature T1 of the region R1 directly below the irradiation of the interface laser light L2 and the temperature T2 of the peripheral region R2. Specifically, by controlling at least one of the frequency of the interface laser light L2 or the temperature of the overlapped wafer T, the temperature T2 of the peripheral region R2 during irradiation of the interface laser light L2 is reduced, thereby increasing the temperature difference ΔT. This allows the laser absorption film Fw to expand due to absorption of the interface laser light L2, thereby increasing the shear stress σ generated between the direct below region R1 and the peripheral region R2, and as a result, the first wafer W and the second wafer S can be properly peeled off.

[0080] Moreover, according to this embodiment, such temperature control is performed only on a portion that is deemed difficult to separate under normal high-frequency separation conditions (irradiation conditions of the interface laser light L2) within the surface of the peripheral portion We. This allows the first wafer W and the second wafer S to be appropriately separated from each other in the portion that is difficult to separate under the normal separation conditions to form the unbonded region Ae, and by irradiating the interface laser light L2 under normal separation conditions in the other portions, a decrease in throughput in forming the unbonded region Ae is suppressed, and the efficiency of forming the unbonded region Ae in the interface modification device 50 can be improved.

[0081] In the above embodiment, a portion that is difficult to peel is detected based on layer information acquired in advance, and control is performed to increase the temperature difference ΔT for the portion that is difficult to peel (temperature control of the overlapped wafer T and control of the irradiation conditions of the interface laser light L2). However, in addition to this, the interface modification device 50 may perform a similar control to appropriately peel the first wafer W and the second wafer S on the radially inner side (the side where the peripheral modified layer M1 is formed) of the peripheral portion We where the processing quality in the edge trim is important. In other words, the frequency of the interface laser light L2 (the temperature difference ΔT shown in FIG. 6) may be controlled based on the radial position of the focal point of the interface laser light L2 within the plane of the overlapped wafer T.

[0082] In such a case, by increasing the temperature difference ΔT on the radially inner side of the peripheral portion We, where the formation accuracy of the unbonded region Ae affects the processing quality of the edge trim, the first wafer W and the second wafer S can be appropriately peeled off, and the processing accuracy and processing quality of the edge trim can be improved. In addition, by setting the frequency of the interface laser light L2 irradiated to the radially outer side of the peripheral portion We (the outer edge side of the first wafer W), where the effect on the processing quality is small, to a high frequency (normal peeling condition), the throughput related to the formation of the unbonded region Ae can be improved.

[0083] In the above embodiment, as shown in FIG. 4, the interface laser light L2 is irradiated onto the laser absorbing film Fw formed at the interface between the first wafer W and the second wafer S, and an unbonded area Ae (peeling surface) is formed at the interface between the laser absorbing film Fw and the bonding film Fs. However, the position where the unbonded area Ae is formed is not limited to this as long as the peripheral portion We of the first wafer W can be appropriately removed. More specifically, for example, the unbonded region Ae is formed at an interface between the first wafer W and the second wafer S where the bonding strength is weak, and the interface where the unbonded region Ae is formed may be the interface between the laser absorbing film Fw and the first wafer W or the device layer Dw, or the interface between the first wafer W and the device layer Ds. Also, for example, the unbonded region Ae may be formed by irradiating the bonding film Fs with the interface laser light L2 instead of the laser absorbing film Fw.

[0084] In the above embodiment, an example has been described in which the peripheral portion We of the first wafer W is removed from the overlapped wafer T in which the first wafer W and the second wafer S are bonded together. However, the technology disclosed herein can also be applied to a case in which the entire first wafer W is removed from the second wafer S, that is, a so-called laser lift-off process of the overlapped wafer T. 10, even when an unbonded region Ae is formed over the entire surface of the bonded interface between the first wafer W and the second wafer S in the overlapped wafer T, the first wafer W can be appropriately peeled off from the second wafer S by increasing the temperature difference ΔT between the area R1 directly below and the peripheral area R2 when the unbonded region Ae is formed. At this time, it is desirable that the frequency of the interface laser light L2 irradiated to the interface between the first wafer W and the second wafer S is determined based on layer information obtained in advance.

[0085] In the above embodiment, there is no particular limitation on the shape (shape of the focal point) of the interface laser light L2 irradiated to the interface between the first wafer W and the second wafer S. However, for example, when the focal point shape of the interface laser light L2 is made circular as shown in Fig. 6, a region (white portion in Fig. 11A: hereinafter referred to as "non-heated region R3") that is not thermally affected by the interface laser light L2 is generated in the interface (laser absorption film Fw) between the first wafer W and the second wafer S in plan view as shown in Fig. 11A, and an unbonded region Ae may not be appropriately formed in the non-heated region R3. Therefore, when the laser head 111 has the above-mentioned spatial light modulator (for example, LCOS), it is desirable to control the shape of the focal point of the interface laser light L2 so that the area of ​​the non-heated region R3 can be reduced.

[0086] 11B, it is desirable to control the focal point shape of the interface laser light L2 to be an approximately trapezoidal shape having a short side on the radially inner side and a long side on the radially outer side in a plan view of the overlapped wafer T. Furthermore, at this time, particularly in the case of forming an unbonded region Ae on the entire surface of the bonding interface between the first wafer W and the second wafer S, it is desirable to make the length of the short side and / or the long side of the approximately trapezoidal shape (the width of the trapezoidal shape) smaller as the irradiation position of the interface laser light L2 moves toward the radially inner side of the overlapped wafer T. By making the irradiation shape of the interface laser light L2 approximately trapezoidal in this manner, the non-heated region R3 formed at the interface (laser absorption film Fw) between the first wafer W and the second wafer S can be eliminated or its area can be reduced. As a result, the entire surface of the peripheral portion We, which is the target for forming the unbonded region Ae, can be properly peeled off.

[0087] The irradiation shape of the interface laser light L2 is not limited to the shape shown in Fig. 11B. For example, the short side and / or the long side of the trapezoidal shape may have a curvature that matches the concentric shape of the overlapped wafer T (laser absorbing film Fw). In this case, the area of ​​the non-heated region R3 can be further reduced. Furthermore, for example, as long as the area of ​​the non-heated region R3 can at least be reduced, the irradiation shape of the interface laser light L2 is not limited to an approximately trapezoidal shape, and may be, for example, a polygonal shape with more than a square (hexagonal in the illustrated example) as shown in FIG. 11C, or may be a staggered pattern of triangles as shown in FIG. 11D.

[0088] In the above embodiment, the laser absorbing film Fw is an oxide film formed on the device layer Dw as shown in FIG. 1, but the laser absorbing film for absorbing laser light may be formed between the first wafer W and the device layer Dw. More specifically, as shown in FIG. 12, a laser absorbing film P, a device layer Dw and a bonding film F are formed on a surface Wa of the first wafer W in this order, and a device layer Ds and a bonding film Fs are formed on a surface Sa of the second wafer S in this order.

[0089] The laser absorbing film P is, for example, an oxide film (SiO2 film, TEOS film), and absorbs laser light in the same manner as the above-mentioned laser absorbing film Fw. The device layers Dw, Ds include a plurality of devices. The bonding films F, Fs are, for example, oxide films (THOX film, SiO2 film, TEOS film), SiC film, SiCN film, adhesive, or the like, and the first wafer W and the second wafer S are bonded via the bonding films F, Fs.

[0090] Hereinafter, a method for removing the first wafer W from the second wafer S in the case where a laser absorbing film P for absorbing laser light is formed between the first wafer W and the device layer Dw will be described. In the following explanation, an example will be given in which the entire first wafer W is removed from the second wafer S as shown in FIG. 10, that is, the device layer Dw formed on the first wafer W is transferred to the second wafer S.

[0091] When transferring the device layer Dw to the second wafer S, first, as shown in Fig. 13, in an interface modification device 50, a laser absorbing film P, more specifically, an interface between the laser absorbing film P and the first wafer W, is irradiated with a pulsed interface laser light L2 (CO2 laser light) (Step St1 in Fig. 14). The interface laser light L2 irradiated from the back surface Wb side of the first wafer W passes through silicon (first wafer W) and is absorbed by the laser absorbing film P, as shown in Fig. 13 (Step St2 in Fig. 14).

[0092] The interface laser light L2 absorbed in the laser absorbing film P is converted into heat according to its energy distribution (Step St3 in FIG. 14). In other words, the absorption of the interface laser light L2 causes the temperature of the laser absorbing film P to increase. Most of the heat (Ht in the figure) generated in the laser absorbing film P by absorbing the interface laser light L2 diffuses toward the first wafer W side (step St4 in FIG. 14) as shown in FIG. 15. In other words, the temperature of the interface between the laser absorbing film P and the first wafer W (silicon) increases due to the thermal diffusion from the laser absorbing film P.

[0093] When the heat generated in the laser absorbing film P diffuses to the first wafer W side, due to the effect of this heat, i.e., an increase in the interface temperature between the laser absorbing film P and the first wafer W, the first wafer W locally expands in the portion irradiated with the interface laser light L2 in accordance with the temperature distribution as shown in FIG. 16 (plastically deforms into a downward convex shape toward the laser absorbing film P side) (step St5 in FIG. 14). Hereinafter, the region affected by the heat generated by irradiation with the interface laser light L2 may be referred to as the “irradiation region R” of the interface laser light L2. In other words, the first wafer W locally expands in the irradiation region R of the interface laser light L2.

[0094] In the interface modification apparatus 50, the interface laser light L2 is irradiated onto the entire surface of the laser absorbing film P in plan view. In other words, as shown in Fig. 17, the interface laser light L2 is irradiated onto the entire surface of the laser absorbing film P multiple times at intervals. At this time, the first wafer W Interface laser light L2 Each time the irradiation is performed, the area expands locally, that is, a plurality of irradiation regions R are formed at intervals in different parts in a plan view.

[0095] Here, when the first wafer W expands, the laser absorbing film P is pressed from above (the first wafer W side) in accordance with the expansion of the first wafer W, and as a result, a compressive stress σ1 is generated in the laser absorbing film P at the irradiation position of the interface laser light L2 as shown in Fig. 17. The generated compressive stress σ1 acts in a direction that peels the first wafer W and the laser absorbing film P (the downward direction in the figure, toward the laser absorbing film P side) to generate a peeling stress σ2 as shown in Fig. 17. In other words, in the irradiation region R of the interface laser light L2, the silicon (first wafer W) expands in the region R1 (see FIG. 8, etc.) directly below the irradiation of the interface laser light L2, generating a compressive stress σ1, and at the same time, a peeling stress σ2, which is a stress in the peeling direction caused by the compressive stress σ1, is generated in the peripheral region R2, particularly the end portion Re (see FIG. 16) of the irradiation region R. This peeling stress σ2 is a tensile stress generated in the peripheral region R2 (see FIG. 8, etc.) of the irradiation region R.

[0096] The generated compressive stress σ1 and peeling stress σ2 are accumulated inside the laser absorbing film P. At this time, at the end Re of the irradiation region R, the peeling stresses σ2 generated in the multiple irradiation regions R act synergistically (overlappingly).

[0097] Then, when the accumulated total amount (synergistic amount) of the peeling stress σ2 at the end Re of the irradiation region R exceeds the adhesion force Σ between the first wafer W and the laser absorbing film P per unit area at the end Re (n×σ2>Σ (where n is a natural number), Interface laser light L2 14), peeling occurs at the interface between the first wafer W and the laser absorbing film P at the end Re of the irradiated region R as shown in FIG. 18, and as a result, the bonding strength between the laser absorbing film P and the first wafer W decreases (Step St6 in FIG. 14). The stress σ (compressive stress σ1 and peeling stress σ2) accumulated inside the laser absorbing film P is released by the peeling of the first wafer W and the laser absorbing film P.

[0098] Then, in the interface modification apparatus 50, as shown in FIG. 19, peeling occurs over the entire interface between the first wafer W and the laser absorbing film P in plan view, in other words, the peeling that occurs at the end Re of the irradiation region R is connected over the entire interface between the first wafer W and the laser absorbing film P, thereby reducing the bonding strength over the entire interface between the first wafer W and the laser absorbing film P, and this makes it possible to properly separate the first wafer W and the laser absorbing film P in a subsequent separation process (Step St7 in FIG. 14).

[0099] The separation of the first wafer W from the laser absorbing film P may be performed in a separation device (not shown) arranged in the wafer processing system 1, or may be performed inside the interface modification device 50. The method of separating the first wafer W from the laser absorbing film P can be determined arbitrarily.

[0100] At this time, in the laminated wafer T after irradiation with the interface laser light L2 in the interface modification device 50, ideally, peeling from the laser absorbing film P occurs over the entire surface of the first wafer W; in other words, after peeling occurs at the end Re of the irradiation region R, the first wafer W and the laser absorbing film P are peeled off even in the center of the irradiation region R including the region directly under irradiation due to the peeling stress σ2. However, as shown in FIG. 18, in the center of the irradiation region R ( Interface laser light L2In the region immediately below the irradiation of the interface laser light L2, the first wafer W and the laser absorbing film P may remain connected (not peeled off) even after peeling occurs at the end Re of the irradiated region R. For this reason, in the wafer processing system 1 according to the technique of the present disclosure, in order to reliably separate the first wafer W from the polymerized wafer T (laser absorbing film P) after irradiation of the interface laser light L2, it is preferable to provide a separation device (not shown) and a process of separating the first wafer W from the polymerized wafer T in the separation device.

[0101] Here, when the separation of the first wafer W from the overlapped wafer T is performed at a separation position of a separation device or the like (not shown), if the overlapped wafer T is transported to the separation position in the ideal state described above, i.e., in a state where peeling from the laser absorbing film P has occurred over the entire surface of the first wafer W, there is a risk that the first wafer W will fall off the second wafer S due to inertial forces, etc., associated with this transport. Furthermore, if peeling from the laser absorbing film P occurs over the entire surface of the first wafer W in this manner, even if there is no need to transport the polymerized wafer T to a separation position after irradiation with the interface laser light L2, there is a risk that the first wafer W will fly off from the second wafer S due to centrifugal force or the like accompanying the rotation of the chuck 100 during irradiation of the interface laser light L2 to the laser absorbing film P in the interface modification device 50.

[0102] In view of this, in order to prevent the first wafer W from scattering or falling during irradiation of the interface laser light L2 to the laser absorbing film P and during transport of the laminated wafer T, it is preferable that the interface modification device 50 controls the irradiation conditions (irradiation position, output, etc.) of the interface laser light L2 so that at least a part of the interface between the first wafer W and the laser absorbing film P remains connected (not peeled off). As a result, the first wafer W is completely separated from the laser absorbing film P during irradiation with the interface laser light L2 or during transport to the separation position. Wafer This prevents the particles from scattering or falling off the S.

[0103] The transfer of the device layer Dw formed on the first wafer W to the second wafer S is performed as described above. That is, in the interface modification device 50, the first wafer W is expanded by heat generated by irradiation of the interface laser light L2, and a compressive stress σ1 is generated in the laser absorbing film P, which generates a peeling stress σ2 at the interface between the first wafer W and the laser absorbing film P, thereby causing peeling at the interface between the laser absorbing film P and the first wafer W, thereby reducing the bonding strength. After the bonding strength is reduced over the entire surface of the laser absorbing film P and the first wafer W, the first wafer W is lifted from the laser absorbing film P in a separation device (not shown) or the interface modification device 50, for example, to remove the first wafer W.

[0104] In addition, in the above embodiment, an example has been described in which a laser absorption film P for absorbing laser light is formed between the first wafer W and the device layer Dw, and the entire first wafer W is removed from the second wafer S. However, a part of the first wafer W may be removed from the second wafer S. Specifically, for example, as shown in FIG. 4, a part of the first wafer W As The peripheral edge We may be removed from the second wafer S, ie, a so-called edge trimming process may be performed.

[0105] The embodiments disclosed herein should be considered as illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0106] 1. Wafer Processing System 50 Interface Modification Equipment 70 Edge removal device 90 Control device Ae Unbonded area Fw laser absorbing film L2 Interface laser light R1 Directly beneath the surface R2 Surrounding Area S 2nd wafer T Polymerized Wafer T1 (Temperature of the immediate area) T2 (surrounding area) temperature W First wafer ΔT temperature difference

Claims

1. A method for treating a laminated substrate in which a first substrate and a second substrate are bonded together, comprising the steps of: Obtaining layer information of the laminated substrate; irradiating a pulsed laser beam onto a laser absorbing film formed at an interface between the first substrate and the second substrate to form an unbonded region in which a bonding strength between the first substrate and the second substrate is reduced; and separating the first substrate from the second substrate; When forming the unbonded region, A temperature difference between a first temperature in a laser light irradiation area including one focal point of the laser light irradiated in a pulsed manner and a second temperature in a laser light irradiation peripheral area formed between the one focal point and another focal point to which the laser light is irradiated next to the one focal point is determined as follows: The processing method includes changing the position of the light-focusing point on the laminated substrate based on at least one of the acquired layer information and the radial position of the light-focusing point on the laminated substrate.

2. expanding the first substrate by heat generated by irradiating the laser light onto the laser absorbing film, and causing peeling at an interface between the first substrate and the laser absorbing film in the peripheral region of the laser light irradiation by stress generated by the expansion of the first substrate; The method of claim 1 , comprising:

3. 3. The processing method according to claim 2, further comprising irradiating the laser light multiple times on the laser absorbing film to accumulate the stress, and causing peeling between the first substrate and the laser absorbing film due to the accumulated stress.

4. causing the peeling to occur in different regions at an interface between the first substrate and the laser absorbing film; The processing method according to claim 3 , further comprising: connecting the peelings occurring in the different regions to form a separation surface that serves as a starting point for separation of the first substrate and the laser absorbing film.

5. The method of claim 4 , further comprising separating and removing at least a portion of the first substrate from the laminated substrate using the separation surface as a starting point.

6. 6. The processing method according to claim 2, wherein the peeling of the first substrate and the laser absorbing film is caused by tensile stress occurring in the peripheral area of ​​the laser light irradiation.

7. forming a peripheral modification layer serving as a starting point for separation of the peripheral portion along a boundary between the peripheral portion of the first substrate to be removed and a central portion of the first substrate; 6. The processing method according to claim 1, wherein, when separating the first substrate, a peripheral portion of the first substrate is separated from the second substrate.

8. The processing method according to claim 7, wherein, when the unbonded region is formed, the temperature difference on the radially inner side, which is the side of the formation position of the peripheral modification layer in the peripheral portion, is made larger than the temperature difference on the radially outer side, which is the end side of the first substrate in the peripheral portion.

9. The processing method according to any one of claims 1 to 5, wherein the temperature difference in an area where it is difficult to peel the first substrate and the second substrate, detected based on the layer information, is made larger than the temperature difference in an area where the first substrate and the second substrate can be normally peeled off.

10. The processing method according to any one of claims 1 to 5, wherein the temperature difference between the area directly under the laser light irradiation and the area surrounding the laser light irradiation is changed by controlling a frequency of the laser light irradiated to the laser absorbing film.

11. The processing method according to claim 10, further comprising: making the frequency smaller in an area where it is difficult to peel the first substrate and the second substrate detected based on the layer information than the frequency in an area where the first substrate and the second substrate can be peeled normally.

12. When forming the unbonded region, the laser absorbing film is simultaneously irradiated with a plurality of the laser beams, 6. The processing method according to claim 1, wherein the positions of the plurality of focal points of each of the plurality of laser beams irradiated simultaneously are set at intervals of at least one of the laser beam irradiation peripheral region in at least one of a radial direction and a circumferential direction of the laminated substrate.

13. When forming the unbonded region, the laser absorbing film is simultaneously irradiated with a plurality of the laser beams, 6. The processing method according to claim 1, wherein the positions of the plurality of focal points of each of the plurality of laser beams irradiated simultaneously are set at intervals in both a radial direction and a circumferential direction of the laminated substrate.

14. 6. The method according to claim 1, wherein, when forming the unbonded region, a shape of the laser light irradiated to the laser absorbing film is changed based on a radial position of the one focusing point on the laminated substrate.

15. The processing method according to claim 14 , wherein the shape of the laser beam is a trapezoid having a short side on an inner side in a radial direction of the laminated substrate and a long side on an outer side in the radial direction.

16. The processing method according to any one of claims 1 to 5, wherein the temperature difference between the region directly below the laser light irradiation and the region peripheral to the laser light irradiation is changed by controlling a cooling mechanism arranged inside a substrate holding part that holds the laminated substrate.

17. The processing method according to any one of claims 1 to 5, wherein the temperature difference between the area directly below the laser light irradiation area and the area surrounding the laser light irradiation area is changed by supplying cooling air from above the laminated substrate.

18. 18. The processing method according to claim 17, wherein an irradiation position of the laser light on the laser absorbing film is determined based on a supply position of the cooling air supplied to the laminated substrate.

19. The processing method according to any one of claims 1 to 5, wherein the layer information includes at least one of information on a thickness or a structure of the laser absorbing film.

20. A processing system for processing a laminated substrate in which a first substrate and a second substrate are bonded together, comprising: a laser absorbing film is formed at an interface between the first substrate and the second substrate; an interface modification device that irradiates the laser absorbing film with a pulsed laser beam to form an unbonded region in which the bonding strength between the first substrate and the second substrate is reduced; a separation device for separating the first substrate from the second substrate; A control device, The control device, in the interface modification device, A temperature difference between a first temperature in a laser light irradiation area including one focal point of the laser light irradiated in a pulsed manner and a second temperature in a laser light irradiation peripheral area formed between the one focal point and another focal point to which the laser light is irradiated next to the one focal point is determined as follows: a processing system that performs control to change the position of the light-focusing point on the laminated substrate based on at least one of layer information of the laminated substrate acquired prior to formation of the unbonded region and a radial position of the light-focusing point on the laminated substrate.

21. The control device includes:

21. The processing system according to claim 20, wherein the irradiation of the laser light in the interface modification device is controlled so that the first substrate is expanded by heat generated by irradiating the laser light to the laser absorbing film, and peeling occurs at an interface between the first substrate and the laser absorbing film due to stress generated by the expansion of the first substrate.

22. The control device includes:

22. The processing system according to claim 21, wherein the laser beam irradiation in the interface modification device is controlled so as to accumulate the stress by irradiating the laser absorbing film with a plurality of shots of the laser beam, and to cause the peeling between the first substrate and the laser absorbing film by the accumulated stress.

23. The control device includes:

23. The processing system according to claim 22, wherein irradiation of the laser light in the interface modification device is controlled so as to cause the peeling to occur in different regions at the interface between the first substrate and the laser absorbing film, and to connect the peelings caused in the different regions to form a separation surface that serves as a starting point for separation of the first substrate and the laser absorbing film.

24. 24. The processing system of claim 23, further comprising: controlling the separating device to separate and remove at least a portion of the first substrate from the polymerized substrate using the separation plane as a starting point.

25. an internal modification device for forming a peripheral modification layer serving as a starting point for separation of the peripheral portion along a boundary between the peripheral portion of the first substrate to be removed and a central portion of the first substrate; 25. The processing system according to claim 20, wherein the control device executes control for separating the peripheral portion of the first substrate from the second substrate in the separating device.

26. The control device includes: The processing system of claim 25 , wherein the temperature difference on the radially inner side, which is the side of the formation position of the peripheral modified layer in the peripheral portion, is made larger than the temperature difference on the radially outer side, which is the side of the end of the first substrate in the peripheral portion.

27. The control device includes: The processing system according to any one of claims 20 to 24, wherein control is performed to make the temperature difference in an area where it is difficult to peel the first substrate and the second substrate, detected based on the layer information, larger than the temperature difference in an area where the first substrate and the second substrate can be normally peeled.

28. The frequency of the laser light irradiated to the laser absorbing film can be arbitrarily changed, The control device includes: The processing system according to any one of claims 20 to 24, wherein the temperature difference between the area directly under the laser light irradiation and the area surrounding the laser light irradiation is controlled by changing the frequency of the laser light irradiated to the laser absorbing film.

29. The control device includes:

29. The processing system of claim 28, further comprising a control for reducing the frequency in an area where it is difficult to separate the first substrate and the second substrate, as detected based on the layer information, compared to the frequency in an area where the first substrate and the second substrate can be normally separated.

30. the interface modification device includes a spatial light modulator that splits the laser light into a plurality of beams, The control device includes: The processing system according to any one of claims 20 to 24, wherein control is performed to set the positions of the plurality of focal points of each of the plurality of laser beams irradiated simultaneously at least at least one of a radial direction and a circumferential direction of the laminated substrate at intervals of at least one of the laser beam irradiation peripheral areas.

31. the interface modification device includes a spatial light modulator that splits the laser light into a plurality of beams, The control device includes: The processing system according to any one of claims 20 to 24, wherein control is performed to set positions of the plurality of focal points of each of the plurality of laser beams irradiated simultaneously at intervals in both a radial direction and a circumferential direction of the laminated substrate.

32. the interface modification device includes a spatial light modulator that adjusts the irradiation shape of the laser light, The control device includes: The processing system according to any one of claims 20 to 24, wherein control is executed to change a shape of the laser light irradiated to the laser absorbing film based on a radial position of the one focusing point on the laminated substrate.

33. The processing system according to claim 32 , wherein the control device adjusts a shape of the laser light to a trapezoid having a short side on an inner side in a radial direction of the laminated substrate and a long side on an outer side in the radial direction.

34. The interface modification device comprises: a substrate support for holding the laminated substrate; a cooling mechanism disposed inside the substrate support, The control device includes:

25. The processing system according to claim 20, wherein the temperature difference between the area directly under the laser light irradiation and the area surrounding the laser light irradiation is controlled by cooling the laminated substrate with the cooling mechanism.

35. The interface modification device comprises: a substrate support for holding the laminated substrate; an air nozzle provided above the substrate support; The control device includes: The processing system according to any one of claims 20 to 24, wherein the temperature difference between the area directly below the laser light irradiation area and the area surrounding the laser light irradiation area is controlled by supplying cooling air from the air nozzle to the laminated substrate to cool the laminated substrate.

36. The processing system according to claim 35 , wherein the air nozzle is integral with a laser irradiation unit that irradiates the laser light.

37. The processing system according to any one of claims 20 to 24, wherein the layer information includes at least any one of information on a thickness or a structure of the laser absorbing film.

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