Plasma source with ceramic electrode plate

Abstract

A plasma source assembly for use with a substrate processing chamber is described, the assembly including a ceramic lower plate having a plurality of apertures formed therein. A method for processing a substrate in a substrate processing chamber including the plasma source assembly is also described.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to a substrate processing apparatus and method. More specifically, embodiments of the present disclosure relate to a plasma source for use with a substrate processing chamber.

Background Art

[0002]

[0002] The formation of semiconductor devices is generally performed in a substrate processing system or platform that includes a plurality of substrate processing chambers, which may also be referred to as a cluster tool. In some examples, the purpose of a multi-chamber processing platform or cluster tool is to sequentially perform two or more processes on a substrate in a controlled environment. However, in other examples, a multi-chamber processing platform may perform only a single processing step on a substrate. Additional chambers may be employed to maximize the rate at which substrates are processed. In the latter case, the process performed on the substrate is typically a batch process, and a relatively large number of substrates, such as 25 or 50 substrates, are processed simultaneously in a given chamber. Batch processing is particularly beneficial for processes that are too time-consuming to perform economically on individual substrates, such as atomic layer deposition (ALD) processes and some chemical vapor deposition (CVD) processes.

[0003] [

[0003] ]In some substrate processing chambers, capacitively coupled plasmas are used to deposit thin films on substrates or to process films deposited on substrates by ALD or CVD. Such chambers may be referred to as plasma ALD (PEALD) chambers and plasma CVD (PECVD) chambers. The plasma is formed between two spaced electrodes in the form of an upper plate and a lower plate that can be made of metal. It is necessary to provide a lower plate that exhibits appropriate conductivity for forming the plasma and minimizes the problem of metal contamination associated with the metal lower plate. Also, during the PEALD or PECVD process, it is necessary to provide a lower plate having a large number of small, closely spaced apertures through which gas can pass. SUMMARY OF THE INVENTION

[0004] [

[0004] ]One or more embodiments of the present disclosure are directed to a plasma source assembly comprising a first electrode including a conductive plate having an upper surface, a bottom surface, and an outer peripheral edge, a second electrode including a conductive plate having an upper surface, a bottom surface, and an outer peripheral edge, a dielectric spacer separating the first electrode and the second electrode and disposed at the outer peripheral edge of the first electrode and the outer peripheral edge of the second electrode, the second electrode comprising a ceramic material and a plurality of apertures therein, and a power supply electrically connected to the first electrode.

[0005] [

[0005] ]Additional embodiments of the present disclosure are directed to a plasma source assembly comprising a first electrode including a conductive plate having an upper surface, a bottom surface, and an outer peripheral edge, a second electrode including a conductive plate having an upper surface, a bottom surface, and an outer peripheral edge, a dielectric spacer separating the first electrode and the second electrode and disposed at the outer peripheral edge of the first electrode and the outer peripheral edge of the second electrode, the second electrode comprising a reaction-bonded silicon carbide and a plurality of apertures therein, and a power supply electrically connected to the first electrode.

[0006]

[0006] A further embodiment of the present disclosure is directed to a method for processing a substrate in a substrate processing chamber, the method comprising placing a substrate in the substrate processing chamber, the substrate processing chamber comprising a first electrode including a conductive plate having an upper surface, a bottom surface, an outer peripheral edge, and a plurality of apertures through which gas can flow, a second electrode made of a ceramic material and including a conductive plate having an upper surface, a bottom surface, an outer peripheral edge, and a plurality of apertures through which gas can flow, a dielectric spacer separating the first electrode and the second electrode and disposed at the outer peripheral edge of the first electrode and the outer peripheral edge of the second electrode, and a power supply electrically connected to the first electrode. The method further includes forming a plasma between the first electrode and the second electrode.

[0007]

[0007] To better understand the features of the present disclosure described above, the present disclosure summarized above will be described more specifically with reference to embodiments illustrated in part in the accompanying drawings. However, it should be noted that the accompanying drawings merely show typical embodiments of the present disclosure and should not be regarded as limiting the scope of the present disclosure, as the present disclosure may admit other equally effective embodiments.

Brief Description of the Drawings

[0008]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Modes for Carrying Out the Invention

[0009]

[0014] Embodiments of the present disclosure provide a plasma source assembly according to one or more embodiments of the present disclosure and a substrate processing chamber including the plasma source assembly. Further embodiments of the present disclosure provide a method of processing a substrate in a substrate processing chamber.

[0010]

[0015] As used in this specification and the appended claims, the terms "substrate" and "wafer" are used interchangeably and both refer to the surface, or a portion of the surface, on which the process acts. Also, it will be understood by those skilled in the art that a reference to a substrate may, in some cases, refer only to a portion of the substrate, unless the context clearly indicates otherwise. Further, a reference to deposition on a substrate may mean both a bare substrate and a substrate on which one or more films or features have been deposited or formed thereon.

[0011]

[0016] As used in this specification and the appended claims, the terms "reactive gas", "precursor", "reactant", etc. are used interchangeably and mean a gas that includes species that react with the substrate surface. For example, a first "reactive gas" may simply adsorb onto the surface of the substrate and be available for further chemical reaction with a second reactive gas.

[0012]

[0017] Referring now to FIG. 1, which shows a plasma source assembly 100 according to one or more embodiments. In the illustrated embodiment, the plasma source assembly 100 includes a first electrode 102 that includes a conductive plate having an upper surface 102t, a bottom surface 102b, and an outer peripheral edge 102p. The plasma source assembly 100 further includes a second electrode 104 that includes a conductive plate having an upper surface 104t, a bottom surface 104b, and an outer peripheral edge 104p. In the embodiments illustrated and described in the present disclosure, the first electrode 102 is disposed on top of the second electrode 104 and separated by a gap 132, such that the first electrode 102 may be referred to as the upper plate and the second electrode 104 may be referred to as the lower plate.

[0013]

[0018] The plasma source assembly 100 further includes a dielectric spacer 106 that separates the first electrode 102 and the second electrode 104 and is disposed at the outer peripheral edge 102p of the first electrode 102 and the outer peripheral edge 104p of the second electrode 104. A power supply unit 108 is electrically connected to the first electrode 102 and the second electrode. In some embodiments, the plasma source assembly may further include a first O-ring 112 disposed between the bottom surface 102b of the first electrode and the dielectric spacer 106. In one or more embodiments, a second O-ring 114 may be disposed between the upper surface 104t of the second electrode 104 and the dielectric spacer 106. According to one or more embodiments, the shapes of the first electrode 102 and the second electrode 104 are generally circular, and the first electrode 102 and the second electrode 104 each have a disk shape. However, the plasma source assembly is not limited to electrodes having a specific shape. In embodiments where the electrodes are disk-shaped, the dielectric spacer 106 in some embodiments is ring-shaped and surrounds the first electrode 102 and the second electrode 104. In FIG. 1, the dielectric spacer 106 is illustrated as being composed of two separate parts that abut against each other, but as shown in FIG. 2, the dielectric spacer 106 can be a single part, as shown in FIG. 3. In some embodiments, a third O-ring 113 may be disposed on the upper surface 102t of the first electrode 102 and adjacent to the outer peripheral edge 102p. In some embodiments, a fourth O-ring 115 may contact the bottom surface 104b of the second electrode 104 and be adjacent to the peripheral edge.

[0014]

[0019] According to one or more embodiments, the first O-ring 112 is positioned adjacent to the outer peripheral edge 102p of the first electrode 102, and the second O-ring 114 is positioned adjacent to the outer peripheral edge 104p of the second electrode 104.

[0015]

[0020] According to one or more embodiments, each of the first O-ring 112 and the second O-ring 114 comprises a material that can withstand the temperature of the processing chamber, such as polytetrafluoroethylene (PTFE). In some embodiments, the third O-ring 113 and the fourth O-ring 115 comprise a material that can withstand the temperature of the processing chamber, such as polytetrafluoroethylene (PTFE).

[0016]

[0021] The plasma source assembly 100 shown in FIG. 1 further includes a purge ring 120 that surrounds and contacts the dielectric spacer 106 and includes a conductive material, and a power supply unit 108 that is electrically connected to the purge ring 120. In one or more embodiments, the purge ring 120 includes a metal such as aluminum or stainless steel, and the dielectric spacer 106 includes a ring made of a ceramic such as alumina or quartz.

[0017]

[0022] In the illustrated embodiment of the plasma source assembly 100, the first electrode 102 and the second electrode 104 are spaced apart to provide a gap 132 between the first electrode 102 and the second electrode 104. In one or more embodiments, the first electrode 102 and the second electrode 104 include a material that enables the formation of a plasma between the first electrode 102 and the second electrode 104. In some embodiments, the first electrode 102 and the second electrode 104 are made of or include silicon. The first electrode 102 may include doped silicon. In certain embodiments, the second electrode 104 is made of a ceramic material, as further described herein.

[0018]

[0023] As shown in FIG. 2, the first electrode includes a plurality of apertures 117 that enable gas to pass through the first electrode 102 and into the gap 132. In some embodiments, the second electrode 104 includes a plurality of apertures 119 that enable gas to pass toward the substrate 150 on the pedestal 152 in the substrate processing chamber 200.

[0019]

[0024] In some embodiments, the first O-ring 112 includes an O-ring with a circular cross-section that contacts the lower surface 102b of the first electrode adjacent to the outer peripheral edge 102p of the first electrode 102, and the second O-ring 114 includes an O-ring with a circular cross-section that contacts the upper surface 104t of the second electrode 104 adjacent to the outer peripheral edge 104p of the second electrode 104.

[0020]

[0025] In certain embodiments of the present disclosure, the plasma source assembly comprises a first electrode 102 including a conductive plate having an upper surface 102t, a bottom surface 102b, and an outer peripheral edge 102p, and a plurality of apertures 117 through which gas can flow. There is a second electrode 104 including a conductive plate having an upper surface 104t, a bottom surface 104b, and an outer peripheral edge 104p, and a plurality of apertures 119 through which gas can flow. In the illustrated embodiment, there is a dielectric spacer 106 that separates the first electrode 102 and the second electrode 104 and is disposed at the outer peripheral edge of the first electrode and the outer peripheral edge of the second electrode. There is a power supply unit 108 electrically connected to the first electrode 102, and a first O-ring 112 in the form of an O-ring with a circular cross-section disposed between the bottom surface 102b of the first electrode 102 and the dielectric spacer 106, and the first O-ring 112 is coaxial with the outer peripheral edge 102p of the first electrode. There is a second O-ring 114 in the form of an O-ring with a circular cross-section disposed between the upper surface 114t of the second electrode 104 and the dielectric spacer 106, and the second O-ring 114 is coaxial with the outer peripheral edge 104p of the second electrode 104.

[0021]

[0026] As shown in FIG. 3, the plasma source assembly 100 can be incorporated into a substrate processing chamber 200, such as a PEALD or PECVD chamber. The plasma source can include an isolator 140 including an insulator material such as ceramic, and a lid 142 including metal. The plasma source assembly further includes a conduit-shaped gas inlet 160. The gas inlet 160 is connected to a gas supply unit for supplying a processing gas, such as argon or other suitable gas for forming plasma. The power supply unit 108 is connected to a suitable power source such as a radio frequency (RF) or microwave power source. The substrate processing chamber 200 can be within an enclosure 170. The substrate 180 can be placed on a substrate support 172, which can be a susceptor or other suitable substrate support. The frequency of the plasma can be adjusted according to the specific reactive species used. Suitable frequencies include, but are not limited to, 2 MHz, 13.56 MHz, 40 MHz, 60 MHz, and 100 MHz.

[0022]

[0027] Now refer to FIGS. 4A and 4B showing alternative embodiments of the second electrode 104. According to one or more embodiments, the second electrode 104 (or the lower plate) includes a ceramic material. As used herein according to one or more embodiments, "ceramic material" refers to an inorganic and non-metallic material. Non-limiting examples of ceramic materials include silicon carbide, silicon-treated silicon carbide, silicon boride, silicon-treated silicon boride, silicon nitride, silicon-treated silicon nitride, aluminum oxide (alumina), zirconium oxide (zirconia), metal-based composite ceramics such as Al / SiC, AlSiB, AlSiN, etc. In some embodiments, the second electrode includes a refractory metal such as silicon, molybdenum, rhenium, or tungsten.

[0023]

[0028] In one or more embodiments, the lower plate includes a reaction-bonded ceramic material. As used herein according to one or more embodiments, "reaction-bonded ceramic material" refers to a ceramic material in which a first element is implanted into a second element. For example, as further described herein, reaction-bonded silicon carbide includes silicon implanted with carbon.

[0024]

[0029] As used herein in accordance with one or more embodiments, "reaction bonding" refers to the process by which a porous ceramic preform is densified by an in situ chemical reaction of two or more elements. Reaction-bonded silicon nitride is formed in the shape of a lower plate and is then made from finely divided silicon powder that is reacted at a high temperature, for example, from 1200 °C to 1250 °C, in an atmosphere of nitrogen / hydrogen or nitrogen / helium. Nitrogen penetrates the porous body and reacts with silicon to form silicon nitride within the pores. Next, this part is heated to a second high temperature, such as 1400 °C, just below the melting point of silicon. The nitrogen flow rate and heating rate are strictly controlled, and the entire reaction-bonding process can take up to two weeks. In the nitriding process, a weight gain of up to 60% occurs, but the dimensional change during nitriding is less than 0.1%. Reaction bonding is sometimes referred to as a "net shape" process, which enables excellent dimensional control and can reduce the amount of expensive machining and finishing required after firing. In one or more embodiments, since reaction bonding does not utilize sintering aids, the high-temperature strength and creep resistance of reaction-bonded silicon nitride parts are acceptable for plasma source lower plate applications.

[0025]

[0030] According to some embodiments, reaction-bonded silicon carbide is manufactured from a finely divided homogeneous mixture of silicon carbide and carbon. Parts formed from this mixture are exposed to liquid or vaporous silicon at a high temperature. The silicon reacts with the carbon to further form silicon carbide and bond the original particles together. The silicon also fills all of the remaining pores. Reaction-bonded silicon carbide has a small dimensional change during sintering. Reaction-bonded parts exhibit substantially constant strength even when the temperature is raised to the melting point of silicon.

[0026]

[0031] The manufacturing process of reaction-bonded silicon carbide may include infiltration that fills the pores by reaction with a liquid or vapor or deposition from a liquid or vapor. In the case of a liquid reaction, this technique is called melt infiltration, and in the case of a vapor phase, it is called chemical vapor infiltration.

[0027]

[0032] In some embodiments, reaction-bonded silicon carbide is referred to as silicon-treated silicon carbide and may be referred to as silicon-infiltrated ceramic. Infiltration imparts to the material a unique combination of mechanical, thermal, and electrical properties that can be tailored to the requirements of the plasma source bottom plate.

[0028]

[0033] Thus, according to some embodiments, a feature of the reaction-bonding process and reaction-bonded ceramics is that the pore space in the starting material is filled by infiltration. Thus, nominally, no volume change occurs during processing. This is very different compared to sintering and hot pressing processes where the pore space is closed by shrinkage of the part (usually a 20% linear shrinkage). Another feature of reaction-bonded ceramics is that molten Si expands as it solidifies in the same way as water. Therefore, the finished reaction-bonded ceramic has complete densification.

[0029]

[0034] According to one or more embodiments, the ceramic material, metal matrix composite, or reaction-bonded ceramic is then machined to include a plurality of apertures to form the bottom plate. Thus, in some embodiments, a plate is formed into a desired shape, such as a disk shape, to provide a second electrode 104 (or bottom plate) having a diameter D e and a thickness T. After forming the plate by reaction-bonding a ceramic material such as SiC or any of the other materials disclosed herein, apertures 119 are machined into the disk as shown in FIGS. 4A and 4B. In FIG. 4A, the illustrated apertures 119 are round or circular, and each aperture has a diameter D a In FIG. 4B, the apertures 119s are in the form of elongated slots having a length L and a width W.

[0030]

[0035] According to one or more embodiments, in an embodiment where the aperture 117 of the first electrode 102 and the aperture 119 of the second electrode 104 are circular, the aperture 117 of the first electrode and the aperture 119 of the second electrode 104 have a diameter of less than 2 mm, less than 1 mm, or less than 0.5 mm. The aperture 117 allows gas to pass through the first electrode 102 and enter the gap 132. Also, the diameter D of the aperture 119 in FIG. 4A a or the length L and width W of the aperture 119s of the second electrode 104 in FIG. 4B are such that only charged ions pass through the aperture 119 or 119s of the second electrode 104 to provide an aperture area ratio obtained by dividing the total area of the apertures 119 of the second electrode 104 by the area of the upper surface of the second electrode 104.

[0031]

[0036] In some embodiments, the aperture area ratio of all the apertures 119 of the second electrode 104 is equal to the total area of all the apertures 119 or 119s divided by the area of the upper surface of the second electrode 104. In the case of circular or round apertures 119 as shown in FIG. 4A, the approximate aperture area ratio of the aperture 119 is limited so as not to exceed 67% of the second electrode 104. The elongated slot apertures 119s in the form shown in FIG. 4B provide an aperture area ratio of the second electrode 104 that exceeds 67%, exceeds 68%, exceeds 69%, or exceeds 70% of the area of the upper surface of the second electrode 104. The area of the upper surface of the second electrode 104 in a circular electrode is πr 2 which is equal to, where r is half of the diameter D e of the second electrode 104. It will be understood. According to one or more embodiments, the aperture 119 in FIG. 4B is in the form of an elongated slot having a width W of 1 mm and a length in the range of 2 to 3 times the width W, for example, 2W, 2.1W, 2.2W, 2.3W, 2.4W, 2.5W, 2.6W, 2.7W, 2.8W, 2.9W, or 3W. In some embodiments, the thickness of the second electrode 104 is in the range of 1 mm to 2 mm.

[0032]

[0037] According to one or more embodiments, the high density of the apertures 119 or 119s to maximize the aperture area ratio is achieved by ultrasonic machining of the apertures 119 or 119s. Ultrasonic machining is a process of removing material from the surface of a part by utilizing high-frequency, low-amplitude vibrations of a tool against the surface of the material in the presence of fine abrasive particles. The ultrasonic machining tool moves perpendicular or orthogonal to the surface of the part with an amplitude of 0.05 to 0.125. The fine abrasive particles are mixed with water to form a slurry and are distributed throughout the part and the tip of the tool. Conventional mechanical processes for forming round apertures 119 as shown in FIG. 4A or elongated slots 119s as shown in FIG. 4B have been determined to be difficult to form in silicon without causing embrittlement of the second electrode 104 due to microcracks. It has been found that ultrasonic machining can form apertures in ceramic electrodes such as the second electrode 104 shown in FIGS. 4A and 4B made from ceramic materials, particularly reaction-bonded ceramic materials such as reaction-bonded silicon carbide. In other embodiments, the apertures 119 which are round as shown in FIG. 4A or the apertures 119s which are elongated slots as shown in FIG. 4B are formed by laser ablation such as laser drilling or free-form laser ablation. It has been found that laser drilling and laser ablation can form apertures in ceramic electrodes such as the second electrode 104 shown in FIGS. 4A and 4B made from ceramic materials, particularly reaction-bonded ceramic materials such as reaction-bonded silicon carbide.

[0033]

[0038] In one or more embodiments, the apertures in the second electrode are ultrasonically machined apertures, for example, ultrasonically machined apertures that are round or elongated slots. In embodiments where the aperture is a round ultrasonically machined aperture, the aperture of the electrode has an opening area of up to 67% of the area of the upper surface of the electrode. In embodiments where the aperture is an elongated slot ultrasonically machined aperture, the aperture of the electrode has an opening area that exceeds 67%, exceeds 68%, exceeds 69% or exceeds 70% of the area of the upper surface of the electrode.

[0034]

[0039] In one or more embodiments, the aperture of the second electrode is an aperture formed by a laser that is a circular or elongated slot, such as an aperture drilled by a laser or an aperture cut by a laser. In embodiments where the aperture is a circular aperture formed by a laser such as an aperture cut by a laser or an aperture drilled by a laser, the aperture of the electrode has an opening area that is at most 67% of the area of the upper surface of the electrode. In embodiments where the aperture is an aperture formed by a laser of an elongated slot such as an aperture cut by a laser or an aperture drilled by a laser, the aperture of the electrode has an opening area that exceeds 67%, exceeds 68%, exceeds 69% or exceeds 70% of the area of the upper surface of the electrode.

[0035]

[0040] According to one or more embodiments, by selecting the second electrode material to be one of the materials described herein, such as a ceramic material, a reaction-bonded ceramic material such as reaction-bonded silicon carbide, an electrode having the necessary electrical properties can be manufactured while minimizing the problem of metal contamination associated with conventional metal electrodes. The use of ultrasonic machining or laser machining described herein alleviates the costs and manufacturing limitations inherent in other manufacturing methods, and thus enables apertures with a wider range of shape dimensions having a high opening area ratio of the upper surface of the electrode, such as exceeding 67%, exceeding 68%, exceeding 69%, exceeding 70% etc. of the area of the upper surface of the electrode. Furthermore, ceramic materials, particularly reaction-bonded ceramic materials such as reaction-bonded silicon carbide, make it possible to form a high density and opening area ratio of the apertures on the upper surface of the electrode while maintaining the strength and durability of the electrode without being damaged during plasma treatment conditions.

[0036]

[0041] Refer to FIG. 5, which shows another aspect related to the method 500 for processing a substrate in a substrate processing chamber. The method includes, at 510, placing a substrate in the substrate processing chamber. The substrate processing chamber may be similar to the chambers illustrated and described herein, and in some embodiments, includes a first electrode including a conductive plate having an upper surface, a bottom surface, an outer peripheral edge, and a plurality of apertures through which gas can flow; a second electrode made of a ceramic material and including a conductive plate having an upper surface, a bottom surface, an outer peripheral edge, and a plurality of apertures through which gas can flow; a dielectric spacer separating the first electrode and the second electrode and disposed at the outer peripheral edge of the first electrode and the outer peripheral edge of the second electrode; and a power supply electrically connected to the first electrode. The method 500 may further include, at 520, flowing a gas into the chamber and, at 530, applying power to the power supply. At 540, the method includes forming or impinging a plasma between the first electrode and the second electrode.

[0037]

[0042] In one or more method embodiments, the ceramic material includes a reaction-bonded ceramic material. In one or more method embodiments, the reaction-bonded ceramic material includes reaction-bonded silicon carbide. In one or more method embodiments, the plurality of apertures includes elongated slots having a width and a length greater than the width.

[0038]

[0043] In one or more method embodiments, the length of the slot ranges from two to three times the width. In one or more method embodiments, the upper surface of the second electrode has an area, and the plurality of slots define an opening area exceeding 68% of the area of the upper surface of the second electrode.

[0039]

[0044] In one or more method embodiments, the apertures are apertures formed by a laser. In one or more method embodiments, the apertures are apertures drilled by a laser. In one or more method embodiments, the apertures are apertures machined by ultrasonic waves.

[0040]

[0045] According to one or more embodiments, the substrate is subjected to processing before and / or after forming the layer. This processing can be performed in the same chamber or in one or more separate processing chambers. In some embodiments, the substrate is moved from a first chamber to a separate second chamber for further processing. The substrate can be moved directly from the first chamber to a separate processing chamber or can be moved from the first chamber to one or more transfer chambers and then to the desired separate processing chamber. Thus, the processing apparatus can include a plurality of chambers coupled to a transfer station. This type of apparatus can be referred to as a "cluster tool" or "cluster system" or the like.

[0041]

[0046] Generally, a cluster tool is a modular system that includes multiple chambers that perform various functions including substrate centering and orientation, degassing, annealing, deposition, and / or etching. According to one or more embodiments, the cluster tool includes at least a first chamber and a central transfer chamber. The central transfer chamber can house a robot that shuttles substrates between the processing chamber and the load lock chamber. The transfer chamber is typically maintained under vacuum conditions and provides an intermediate stage for shuttling substrates from one chamber to another and / or to a load lock chamber positioned at the front end of the cluster tool. Two well-known cluster tools that can be adapted to the present disclosure are Centura® and Endura®, both of which are commercially available from Applied Materials, Inc. of Santa Clara, California. However, the exact arrangement and combination of the chambers can be varied for the purpose of performing specific steps of the processes described herein. Other processing chambers that can be used include, but are not limited to, processes such as cyclic layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etching, pre-cleaning, chemical cleaning, heat treatments such as rapid thermal processing (RTP), plasma nitridation, degassing, orientation, hydroxylation, and other substrate processes. Any of the deposition processes, such as CLD, ALD, CVD, can be performed in a substrate processing chamber that includes the plasma source assembly described herein. In the above case, these processes can be referred to as plasma CLD, ALD, or CVD. By performing the process in a chamber on the cluster tool, surface contamination of the substrate by impurities in the atmosphere can be avoided without oxidizing the substrate before subsequent films are deposited.

[0042]

[0047] According to one or more embodiments, the substrate is continuously under vacuum conditions or "load lock" conditions and is not exposed to ambient air when moving from one chamber to the next. Thus, the transfer chamber is under vacuum and is "pumped down" under vacuum pressure. An inert gas may be present in the processing chamber or the transfer chamber. In some embodiments, the inert gas is used as a purge gas to remove some or all of the reactants after forming a layer on the surface of the substrate. According to one or more embodiments, the purge gas is injected at the exit of the deposition chamber to prevent reactants from moving from the deposition chamber to the transfer chamber and / or to additional processing chambers. Thus, the flow of inert gas forms a curtain at the exit of the chamber.

[0043]

[0048] During processing, the substrate can be heated or cooled. Such heating or cooling can be achieved by any suitable means including, but not limited to, changing the temperature of the substrate support (e.g., susceptor) and flowing heated or cooled gas over the surface of the substrate. In some embodiments, the substrate support includes a heater / cooler that can be controlled to conductively change the substrate temperature. In one or more embodiments, the gas employed (either a reactive gas or an inert gas) is heated or cooled to locally change the substrate temperature. In some embodiments, a heater / cooler is positioned within the chamber adjacent to the surface of the substrate to convectively change the substrate temperature.

[0044]

[0049] The substrate may be stationary or rotating during processing. A rotating substrate can be rotated continuously or in discontinuous steps. For example, the substrate can be rotated throughout the process or rotated slightly during exposure to different reactive or purge gases. By rotating the substrate (continuously or stepwise) during processing, more uniform deposition or etching can be performed, for example, minimizing the effects of local variations in the gas flow pattern.

[0045]

[0050] While the foregoing has been directed to embodiments of the present invention, it is possible to devise additional embodiments of the present invention without departing from the basic scope thereof as determined by the following claims.

Claims

1. 1. A plasma source assembly comprising: a first electrode including a conductive plate having a top surface, a bottom surface, and a peripheral edge; a second electrode including a conductive plate having a top surface, a bottom surface, and a peripheral edge; a dielectric spacer separating the first electrode and the second electrode and disposed on an outer periphery of the first electrode and an outer periphery of the second electrode, the second electrode being made from a reaction-bonded ceramic material and including a plurality of apertures therein, the plurality of apertures including a plurality of elongated slots having a width and a length greater than the width, a top surface of the second electrode having an area, and the plurality of elongated slots defining an open area that is greater than 68% of an area of ​​the top surface of the second electrode; a power supply section electrically connected to the first electrode and the second electrode; A plasma source assembly comprising:

2. The plasma source assembly of claim 1 , wherein the reaction bonded ceramic material comprises elements infiltrated into a starting material.

3. The plasma source assembly of claim 2 , wherein the reaction bonded ceramic material comprises reaction bonded silicon carbide.

4. The plasma source assembly of claim 1 , wherein the length is in the range of two to three times the width.

5. The plasma source assembly of claim 1 , wherein the apertures are ultrasonically machined apertures.

6. The plasma source assembly of claim 1 , wherein the first electrode and the second electrode are spaced apart to provide a gap between the first electrode and the second electrode.

7. 1. A plasma source assembly comprising: a first electrode including a conductive plate having a top surface, a bottom surface, and a peripheral edge; a second electrode including a conductive plate having a top surface, a bottom surface, and a peripheral edge; a dielectric spacer separating the first electrode and the second electrode and disposed on an outer periphery of the first electrode and an outer periphery of the second electrode, the second electrode being made from reaction bonded silicon carbide and including a plurality of apertures therein, the plurality of apertures including elongated slots having a width and a length in a range of two to three times greater than the width, the dielectric spacer enabling the first electrode and the second electrode to form a plasma between the first electrode and the second electrode; a power supply section electrically connected to the first electrode and the second electrode; A plasma source assembly comprising:

8. 1. A method for processing a substrate in a substrate processing chamber, comprising: placing a substrate in the substrate processing chamber, the substrate processing chamber comprising: a first electrode including a conductive plate having a top surface, a bottom surface, a periphery, and a plurality of apertures through which gas may flow; a second electrode including a conductive plate made from a ceramic material and having a top surface, a bottom surface, a periphery, and a plurality of apertures through which gas may flow; a dielectric spacer separating the first electrode and the second electrode and disposed on an outer periphery of the first electrode and an outer periphery of the second electrode, the second electrode being made from a reaction-bonded ceramic material and including a plurality of apertures therein, the plurality of apertures including a plurality of elongated slots having a width and a length greater than the width, a top surface of the second electrode having an area, and the plurality of elongated slots defining an open area that is greater than 68% of an area of ​​the top surface of the second electrode; a power supply section electrically connected to the first electrode and the second electrode; placing a substrate in the substrate processing chamber; forming a plasma between the first electrode and the second electrode; The method includes:

9. The method of claim 8 , wherein the reaction bonded ceramic material comprises elements infiltrated into a starting material.

10. The method of claim 9 , wherein the reaction bonded ceramic material comprises reaction bonded silicon carbide.

11. The method of claim 8 , wherein the length is in the range of two to three times the width.

12. The method of claim 8 , wherein the apertures are ultrasonically machined apertures.

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