Surface cleaning with directed high pressure chemicals.

Abstract

The cleaning chamber may include a substrate support having a substrate seating position. The cleaning chamber may include a plurality of fluid nozzles facing the substrate support. Each fluid nozzle of the plurality of fluid nozzles may define a fluid port characterized by a leading edge and a trailing edge. Each fluid nozzle of the plurality of fluid nozzles may be angled relative to the substrate seating position of the substrate support to generate an included angle of about 90° or greater at an intersection location with the substrate seating position for fluid dispensed from each fluid nozzle at a leading edge of the fluid port.

Description

Technical Field

[0001] Cross - Reference to Related Applications

[0001] This application claims the benefit and priority of U.S. Non - Provisional Patent Application No. 17 / 541,540, entitled "SURFACE CLEANING WITH DIRECTED HIGH PRESSURE CHEMISTRY", filed on December 3, 2021, the content of which is hereby incorporated by reference in its entirety for all purposes.

[0002]

[0002] This technology relates to semiconductor systems, processes, and apparatus. In particular, this technology relates to high - pressure substrate cleaning processes and apparatus.

Background Art

[0003]

[0003] Among other processing steps, chemical mechanical polishing is commonly used in semiconductor processing to planarize or polish a layer of material formed on a semiconductor substrate. In a typical process, the substrate is pressed against a rotating polishing pad onto which a polishing slurry is flowed. The material formed along the substrate is removed by a combination of the chemical interaction of the polishing slurry and the mechanical interaction by the polishing pad. In chemical mechanical polishing and other processes, as particle contamination becomes a major issue for further miniaturization, substrate cleaning during manufacturing can become insufficient.

[0004]

[0004] Accordingly, there is a need for improved systems and methods that can be used to improve systems for cleaning and enhanced particle removal. These needs and other needs are addressed by this technology.

Summary of the Invention

[0005]

[0005] The cleaning chamber may include a substrate support having a substrate seating position. The cleaning chamber may include a plurality of fluid nozzles facing the substrate support. Each fluid nozzle of the plurality of fluid nozzles may define a fluid port characterized by a leading edge and a trailing edge. Each fluid nozzle of the plurality of fluid nozzles may be angled with respect to the substrate seating position of the substrate support such that an interior angle of about 90° or more is generated at an intersection position that intersects the substrate seating position with respect to the fluid supplied from each fluid nozzle at the leading edge of the fluid port.

[0006]

[0006] In some embodiments, each fluid nozzle may be operable to supply fluid at about 500 psi or more. The plurality of fluid nozzles may be a first plurality of fluid nozzles, and the cleaning chamber may include a second plurality of fluid nozzles. The first plurality of fluid nozzles may be directed toward the substrate seating position in a first direction. The second plurality of fluid nozzles may be directed toward the substrate seating position in a second direction opposite the first direction. Each fluid nozzle of the first plurality of fluid nozzles may be spaced apart from each adjacent fluid nozzle of the first plurality of fluid nozzles by a certain gap. Each fluid nozzle of the second plurality of fluid nozzles may be disposed at a position corresponding to the gap between two fluid nozzles of the first plurality of fluid nozzles. Each fluid nozzle of the first plurality of fluid nozzles may be arranged along a straight line in a first direction across the cleaning chamber. Each fluid nozzle of the second plurality of fluid nozzles may be arranged along a straight line in a second direction across the cleaning chamber perpendicular to the first direction. The cleaning chamber or system may include a first cleaning fluid reservoir fluidly coupled to the first plurality of fluid nozzles within the cleaning chamber. The cleaning chamber or system may include a second cleaning fluid reservoir fluidly coupled to the second plurality of fluid nozzles within the cleaning chamber. The first cleaning fluid reservoir may contain a first cleaning fluid, and the second cleaning fluid reservoir may contain a second cleaning fluid different from the first cleaning fluid. Each fluid port may be characterized by a slit opening.

[0007]

[0007] Some embodiments of the present technology may include a method of substrate cleaning. The method may include placing a substrate within a substrate cleaning chamber. The method may include spraying a cleaning fluid onto the substrate from a plurality of fluid nozzles within the substrate cleaning chamber. Each fluid nozzle of the plurality of fluid nozzles is angled with respect to the substrate such that an interior angle between the cleaning fluid and the substrate along a leading edge of the supply from each fluid nozzle is about 90° or greater.

[0008]

[0008] In some embodiments, the method may include rotating the substrate within the substrate cleaning chamber while spraying the cleaning fluid. The cleaning fluid may be sprayed at a fluid pressure of about 250 psi or less. The method may include reversing the direction of rotation. The method may include continuing to spray the cleaning fluid onto the substrate. The cleaning fluid may be sprayed at a fluid pressure of about 500 psi or greater. The cleaning fluid may be, or may include, deionized water, hydrofluoric acid, or ammonium hydroxide. The cleaning fluid may include a first cleaning fluid. The method may include stopping the spraying of the first cleaning fluid. The method may include spraying a second cleaning fluid onto the substrate. The plurality of fluid nozzles may be a first plurality of fluid nozzles, and the second cleaning fluid may be sprayed from a second plurality of fluid nozzles. Each fluid nozzle of the first plurality of fluid nozzles may be arranged in a line in a first direction across the substrate cleaning chamber. Each fluid nozzle of the second plurality of fluid nozzles may be arranged in a line in a second direction across the substrate cleaning chamber that is perpendicular to the first direction.

[0009]

[0009] Some embodiments of the present technology may include a cleaning chamber. The cleaning chamber may include a substrate support having a substrate seating position. The cleaning chamber may include a plurality of fluid nozzles facing the substrate support. Each fluid nozzle of the plurality of fluid nozzles may define a fluid port characterized by a spray angle having a spray leading edge and a spray trailing edge. Each fluid nozzle of the plurality of fluid nozzles may be angled with respect to the substrate seating position of the substrate support such that the spray leading edge of the spray angle of the fluid port of each fluid nozzle of the plurality of fluid nozzles intersects at a position intersecting the substrate seating position at an interior angle of about 90° or more. In some embodiments, the substrate support may include a rotatable drum. The plurality of fluid nozzles may be coupled along the sidewall of the cleaning chamber outside the rotatable drum. Each fluid nozzle may be operable to supply fluid at about 500 psi or more.

[0010]

[0010] Such technology may provide a number of advantages over conventional systems and techniques. For example, the cleaning system may enable a cost-effective process that can rapidly reduce particle contamination across multiple substrate surfaces. Further, the present technology may reduce the number of particles on any number of substrates that can be processed in several ways. These embodiments and other embodiments are described in more detail below in conjunction with the following description and the accompanying drawings, along with many of their advantages and features.

[0011]

[0011] The nature and advantages of the technology of the present disclosure may be further understood by reference to the following portions of this specification and the figures below.

Brief Description of the Drawings

[0012]

Figure 1

[0012] A schematic cross-sectional view of an exemplary processing system according to some embodiments of the present technology is shown.

Figure 2

[0013] Selected steps in a method of processing according to some embodiments of the present technology are shown.

Figure 3

[0014] A schematic cross-sectional view of an exemplary cleaning system according to some embodiments of the present technology is shown.

Figure 4

[0015] Shows a schematic diagram of an exemplary cleaning nozzle arrangement according to some embodiments of the present technology.

Figure 5

[0016] Shows a schematic diagram of an exemplary nozzle angle according to some embodiments of the present technology.

Figure 6

[0017] Shows a schematic diagram of an exemplary nozzle orientation according to some embodiments of the present technology.

Figure 7

[0018] Shows a schematic diagram of an exemplary nozzle orientation according to some embodiments of the present technology.

Figure 8

[0019] Shows a schematic diagram of an exemplary nozzle orientation according to some embodiments of the present technology.

Figure 9

[0020] Shows a schematic diagram of an exemplary nozzle orientation according to some embodiments of the present technology.

Mode for Carrying Out the Invention

[0013]

[0021] Some of the drawings are included as schematic diagrams. It should be understood that the drawings are for illustrative purposes only and should not be considered to be to scale unless expressly stated to be so. Further, as schematic diagrams, the drawings are provided to assist understanding and may not include all aspects or information compared to a realistic depiction and may include exaggerated content for illustrative purposes.

[0014]

[0022] In the accompanying drawings, similar components and / or features may have the same reference numerals. Further, various components of the same type can be distinguished according to the reference numerals by letters for distinguishing between similar components. When only the first reference numeral is used in this specification, the description is applicable to any of the similar components having the same first reference numeral regardless of the letters.

[0015]

[0023] Substrate processing can include the formation and removal of materials to create any number of structures. During processing, particle generation and contamination can affect the compatibility of the interface layer and the quality of layer formation. Chemical mechanical polishing or any other type of polishing or removal may be performed to produce a relatively planar surface, such as within the tolerances of the system, but any number of particles can be introduced in this process. A brush scrubber can be used to remove residual material from the polishing process, but with conventional brush scrubbers, the size of the particles that can be removed may be limited, and additional particulate matter may be introduced from the scrubber. Brush scrubbing also faces the limitation that, since the brush is a consumable, the cleaning efficiency varies over the useful life of the brush, and tool downtime is required for replacement at the end of the useful life. Thus, in the manufacturing processes of any number of semiconductors, solar cells, or displays, particle contamination can be an obstacle to further miniaturization.

[0016]

[0024] Other conventional cleaning systems are also often troubled by insufficient cleaning. For example, spray cleaning in the prior art is often performed at low pressure with the spray nozzles directed directly along the substrate to be cleaned. Using a lower pressure limits any impact on device features that would normally be likely to cause pattern collapse. However, this can cause many problems in substrate cleaning. For example, at low pressure, certain large particles can be removed from the substrate, but there may not be enough force to remove smaller particulate matter. Furthermore, spray nozzles oriented perpendicular to the surface of the substrate to be cleaned can pose several problems. In addition to requiring longer cleaning times, the interaction of the fluid patterns sprayed onto the substrate can generate eddy currents between the interacting fluid streams from adjacent nozzles. Large particles may be removed, but this interaction can weaken the force of the flowing fluid and may not be able to overcome the van der Waals forces between the substrate and the small particles, or small particles may reattach at secondary locations due to the vortices generated across the substrate being cleaned. Therefore, the prior art has not been able to improve substrate cleaning and particle removal.

[0017]

[0025] The present technology overcomes these problems in conventional scrubbing and cleaning systems by providing a cleaning system with specially angled nozzles to generate a fluid flow pattern that can increase particle removal and reduce nozzle interaction. Furthermore, the present technology can utilize an increase in fluid pressure, thereby improving particle removal across the surface to be cleaned. The present technology can use one or more fluids to adjust the zeta potential between the cleaning fluid and the particles across the substrate surface, thereby changing the charges of the particles and the substrate and facilitating the removal and overcoming of the van der Waals forces between the particles and the substrate surface both in the initial position and during transfer from the substrate.

[0018]

[0026] The remaining disclosure will identify a particular deposition process that utilizes the disclosed technology as normal, but it will be readily understood that the system and method are equally applicable to a variety of other substrates for cleaning, including display panels, solar panels, or any other substrate where particle removal may be beneficial. Thus, the technology should not be considered limited to use with the described substrates and processes alone. Before describing the system and method or steps of an exemplary process sequence according to some embodiments of the technology, this disclosure will describe one possible system in which the technology may be used. It should be understood that the technology is not limited to the described apparatus, and the described process may be carried out in any number of processing chambers and systems with any number of modifications, some of which will be described below.

[0019]

[0027] FIG. 1 shows a schematic cross-sectional view of an exemplary polishing system 100 according to some embodiments of the present technology. The polishing system 100 includes a platen assembly 102 that includes a lower platen 104 and an upper platen 106. The lower platen 104 may define an internal space or cavity. Connections may be made through this internal space or cavity. Also, within this internal space or cavity, an end point detection device or other sensor or device, such as an eddy current sensor, an optical sensor, or other components for monitoring the polishing process or components, may be included. For example, as further described below, fluid joints may be created in lines extending through the lower platen 104, and these lines may access the upper platen 106 through the back side of the upper platen. The platen assembly 102 may include a polishing pad 110 attached on a first surface of the upper platen. A substrate carrier 108 (or carrier head) may be disposed above and may face the polishing pad 110. The platen assembly 102 may be rotatable about axis A, and the substrate carrier 108 may be rotatable about axis B. The substrate carrier may also be configured to sweep back and forth from the inner diameter to the outer diameter along the platen assembly to at least partially reduce non-uniform wear on the surface of the polishing pad 110. The polishing system 100 may also include a fluid supply arm 118 disposed above the polishing pad 110 that may be used to supply a polishing fluid (such as a polishing slurry) onto the polishing pad 110. Further, a pad adjustment assembly 120 may be disposed above and may face the polishing pad 110.

[0020]

[0028] In some embodiments that perform a chemical mechanical polishing process, a rotating and / or sweeping substrate carrier 108 can apply a downforce (a downward force) to the substrate 112. The substrate 112 is illustrated by a virtual line and may be disposed within or coupled to the substrate carrier. The applied downforce can push down the material surface of the substrate 112 against the polishing pad 110 when the polishing pad 110 rotates around the central axis of the platen assembly. The interaction between the substrate 112 and the polishing pad 110 can occur in the presence of one or more polishing fluids supplied by the fluid supply arm 118. A typical polishing fluid can include a slurry formed from an aqueous solution in which polishing particles can be suspended. Often, the polishing fluid contains pH adjusters and other chemically active components, such as oxidizing agents, that can enable chemical mechanical polishing of the material surface of the substrate 112.

[0021]

[0029] The pad adjustment assembly 120 can be operable to apply a fixed polishing adjustment disk 122 to the surface of the polishing pad 110 that can be rotated as described above. This adjustment disk can be operated on the pad before, after, or during polishing of the substrate 112. By adjusting the polishing pad 110 using the adjustment disk 122, the polishing pad 110 can be maintained in a desired state by polishing, activating, and removing polishing by-products and other debris from the polishing surface of the polishing pad 110. The upper platen 106 may be disposed on the mounting surface of the lower platen 104 and may be coupled to the lower platen 104 using a plurality of fasteners 138 that extend through the annular flange-shaped portion of the lower platen 104.

[0022]

[0030] The polishing platen assembly 102, and thus the upper platen 106, may be appropriately sized for any desired polishing system and may be sized for substrates of any diameter, including 200 mm, 300 mm, 450 mm, or greater. For example, a polishing platen assembly configured to polish a substrate with a 300 mm diameter may be characterized by a diameter greater than about 300 mm, such as between about 500 mm and about 1000 mm, or greater than about 500 mm. The platen may be sized to accommodate substrates characterized by larger or smaller diameters or for an upper polishing platen 106 sized for simultaneous polishing of multiple substrates. The upper platen 106 may be characterized by a thickness between about 20 mm and about 150 mm and may be characterized by a thickness of about 100 mm or less, such as about 80 mm or less, about 60 mm or less, about 40 mm or less, or less. In some embodiments, the ratio of the diameter to the thickness of the polishing platen 106 may be about 3:1 or greater, about 5:1 or greater, about 10:1 or greater, about 15:1 or greater, about 20:1 or greater, about 25:1 or greater, about 30:1 or greater, about 40:1 or greater, or about 50:1 or greater, or greater.

[0023]

[0031] The upper platen and / or the lower platen may be formed of a suitably rigid, lightweight, and polish fluid corrosion-resistant material, such as aluminum, an aluminum alloy, or stainless steel, although any number of materials may be used. The polishing pad 110 may be formed of any number of materials, such as polymeric materials such as polyurethane, polycarbonate, fluoropolymers, polytetrafluoroethylene, polyphenylene sulfide, or combinations of these or other materials. Further materials may be polymeric materials with open or closed cells, elastomers, felts, impregnated felts, plastics, or any other materials that may be compatible with the processing chemicals, or may include them. The polishing system 100 is included to provide appropriate reference to the components described below that may be incorporated within the system 100, although it will be understood that the description of the polishing system 100 is not intended to limit the technology in any way, as embodiments of the technology may be incorporated into any number of polishing systems that may benefit from the components and / or functions as further described below.

[0024]

[0032] The polishing assemblies according to the multiple embodiments of the present technology described above may be used in the method of substrate cleaning according to some embodiments of the present technology. The polishing process may introduce any number of particles, including those from the slurry, the mounting surface, and the polishing pad. As described above, chemical mechanical polishing does not necessarily have to be performed before performing the substrate cleaning process that may be applicable to some substrate cleaning processes according to some embodiments of the present technology. However, the generation of particles from polishing and other processes may leave a large number of particles of various sizes along multiple surfaces of the substrate. FIG. 2 shows selected steps in the method 200 of substrate cleaning according to some embodiments of the present technology. The method 200 may include one or more steps prior to the start of the steps of the method described, including a process for growing a layer of one or more materials on a semiconductor, display, or other substrate, as well as any number of processes for removing or growing features on the substrate. This process may grow particulate matter that may be exposed across the substrate and, in some embodiments, may adhere to the back side of the substrate.

[0025]

[0033] Some embodiments may include a process of performing a chemical mechanical polishing process in an optional step 205. This process may provide a substantially planar surface across the substrate, but it should be understood that the planar surface to be cleaned may be provided by any number of methods. Planarity means a relatively flat surface, for example, within the tolerances of the processes utilized to generate planarity, including chemical mechanical polishing. Further, in some embodiments, the exposed surface of the substrate may be characterized by any number of topographies that may be created by any processing or manufacturing method. In step 210, the method 200 may include placing the substrate within a cleaning chamber. The cleaning chamber may include a substrate support including a substrate seating position. An exemplary cleaning chamber may be described in more detail below.

[0026]

[0034] In operation 215, method 200 may include spraying a cleaning fluid across a substrate. The fluid may be supplied from a plurality of nozzles. The plurality of nozzles may extend across one or more portions of the chamber. As will be described in more detail below, fluid nozzles according to some embodiments of the present technology may be angled with respect to the substrate surface. Thereby, the cleaning process can be improved. In some embodiments, in optional operation 220, the substrate may be rotated within the cleaning chamber relative to the nozzles, or alternatively may be translated in one or more directions to improve surface cleaning. Depending on the direction of rotation, the concepts of leading edge and trailing edge may be reversed from those described. It should be understood that in some embodiments, depending on the direction of rotation relative to the angle of the fluid nozzle, either edge may be the leading edge or the trailing edge. Further, the fluid nozzle may be translated laterally within the chamber to further improve the cleaning and exposure of the substrate surface, such as by moving the span from which the fluid nozzle extends. In some embodiments, in optional operation 225, the spraying operation using the first cleaning fluid may be stopped and a second cleaning fluid may be sprayed or otherwise supplied. The second cleaning fluid may be supplied from the same or different fluid nozzles within the processing chamber. Any number of additional fluid supplies may also be performed. Some aspects of cleaning method 200 may be performed to improve cleaning and processing throughput and will be described in more detail below. It should be understood that any aspect as described below may be applied to method 200 or any other cleaning method that utilizes aspects of the present technology.

[0027]

[0035] Figure 3 shows a schematic cross-sectional view of an exemplary cleaning system 300 according to some embodiments of the present technology. However, the processes according to multiple embodiments of the present technology may be executed in various chambers and systems. Cleaning system 300 shows an exemplary system in which a substrate can be cleaned along one or more surfaces while being arranged in a vertical orientation to facilitate gravitational removal of the supplied fluid. In multiple embodiments, it should be understood that multiple adjustments can be made to the system, including having a chamber where the substrate is arranged horizontally within the chamber or chucked to a substrate support. Multiple methods according to some embodiments of the present technology, including method 200, may be executed in system 300 or an alternative system having one or more of the components described throughout this application. It should be understood that cleaning system 300 is not illustrated at any particular scale and is illustrated only to exemplify multiple components that may be included in some embodiments. It should be understood that multiple components may be closer to or spaced apart from each other to provide the effects or scaling as described throughout this disclosure.

[0028]

[0036] Cleaning system 300 may include a chamber body 305. Chamber body 305 may enable a vertical orientation of the substrate within the chamber. However, in some embodiments, the chamber may be oriented such that the wafer sits horizontally. In that case, fluid is supplied from above and / or below. In some embodiments, chamber body may include a drum 310 disposed within chamber body 305. Drum 310 may include or define a substrate sheet 312 and enable a substrate 315 to be disposed or seated within the cleaning chamber. In some embodiments, drum 310 may be rotatable within chamber body 305. This may facilitate the cleaning process as described above and enable a static fluid supply while rotating the substrate. Substrate 315 may be characterized by any of the dimensions and shapes described above and may include a rectangular dimension and shape, such as a display, a solar panel, or other panel substrate configurations.

[0029]

[0037] Depending on the substrate and the cleaning process, the drum 310 may define a substrate sheet to enable exposure of the substrate along opposing surfaces. This may allow the surface being processed, or the surface on which formation or removal has occurred, and the backside surface to be cleaned simultaneously according to some embodiments of the present technology. Further, the drum or substrate support may include a substrate seating surface. Thereby, in some embodiments of the present technology, the substrate may be clamped by, for example, reduced pressure or an electrostatic chuck. When configured to rotate, the drum 310 or substrate support may be operable to rotate at any speed, including speeds corresponding to cleaning processes or spin or drying processes. Further, the drum 310 may rotate about an axis enabling an elliptical orbit, allowing lateral movement as well as rotational movement to improve cleaning exposure across the substrate.

[0030]

[0038] The cleaning system 300 may also include a fluid supply device 320, and in some embodiments of the present technology, may include a second fluid supply device 325. The fluid supply device 320 or 325 may include a plurality of fluid nozzles, as will be described below. Thereby, one or more cleaning fluids may be supplied or sprayed across the substrate. The fluid supply device 320 may be fluidly coupled to a first fluid reservoir 322. The first fluid reservoir 322 may supply one or more fluids to one or more nozzles of the fluid supply device 320. Similarly, the fluid supply device 325 may be fluidly coupled to a second fluid reservoir 327. The second fluid reservoir 327 may supply one or more fluids to one or more nozzles of the fluid supply device 325. As will be described below, the fluid nozzles may be distributed in one or more patterns within the chamber body 305 and may or may not be translatable in some embodiments of the present technology. For example, in some embodiments, the fluid nozzles may extend from a span that may be rotated or laterally translated, while in some embodiments, the nozzles or span may be fixed within the chamber body. Thereby, further particle generation from components moving within the cleaning chamber may be limited.

[0031]

[0039] Figure 4 shows a schematic diagram of an exemplary cleaning nozzle arrangement 400 according to some embodiments of the present technology, which may show details of a fluid supply device as described above. A substrate 405 is included, which may be any substrate to be cleaned, and may be seated, positioned, or housed within a cleaning chamber incorporating one or more cleaning nozzle arrangements 400. Although shown in a vertical orientation, it should be understood that the system may be horizontally arranged in a plurality of embodiments encompassed by the present technology. Further, although the nozzles are shown in a vertical orientation, the nozzles may also be arranged across the chamber on a horizontal span and may be shown without a specific orientation or direction. Similarly, in a plurality of embodiments where the substrate can be rotated, the figure may show a configuration and / or nozzle orientation in which the substrate 405 can be rotated in either direction within or outside the page. The cleaning nozzles may be included within a cleaning system as described above or any other cleaning system and may be used to perform the cleaning process as described above. The present technology may provide a cleaning nozzle arrangement having specially angled nozzles that enable improved flow and cleaning across the substrate, whereby the generation or interference of eddy currents across the substrate can be limited. As shown, this arrangement may include a span 410 or bridge. The span 410 or bridge may be coupled to a fluid reservoir as described above. The fluid reservoir may include one or more channels along or within the span for the supply of fluid to one or more fluid nozzles 415.

[0032]

[0040] The fluid nozzle 415 may extend from the span 410 at an angle 417 and may face the substrate. The nozzle may extend away from a posture perpendicular to the substrate 405. Any number of fluid nozzles may be arranged along the span and may be spaced apart to include any gap 419 between the fluid nozzles. Further, the number of fluid nozzles included may depend on the size and shape of the substrate to be cleaned. Each fluid nozzle may define or include a fluid port 420 that may define a fluid spray 425 onto the substrate. The fluid port 420 may be an aperture or a rounded shape, but in some embodiments, the fluid port 420 may define a slit or slot such as a rectangular opening. Thereby, a flat fluid spray 425 may be provided onto the substrate. Any number of apertures or fluid ports are encompassed by the present technology and may be used to adjust the fluid spray pressure and profile when the fluid is supplied to the substrate.

[0033]

[0041] In some embodiments, as will be further described below, the fluid nozzle may be angled to provide a specific spray profile along the substrate surface. For example, the fluid port may define a pattern for a fluid spray 425 that includes a spray angle 427. This pattern may also be affected by the pressure at which the cleaning fluid can be supplied through the system. Any spray angle 427 may be encompassed by the present technology, but in some embodiments, the fluid nozzle 415 may provide a spray angle of about 60° or less, about 55° or less, about 50° or less, about 45° or less, about 40° or less, about 35° or less, about 30° or less, about 25° or less, about 20° or less, about 15° or less, about 10° or less, or less. In some embodiments, a spray angle of about 10° or more, about 15° or more, or more is provided. This can reduce the number of nozzles used to provide coverage across the substrate surface. By keeping the spray angle relatively small, the force across the substrate corresponding to the spray may be more uniform with respect to the angled pattern. Thereby, the cleaning efficiency in the plurality of systems involved can be improved. In some embodiments, the angle 417 may be similar to the spray angle or may be a portion of the spray angle added in one direction from the vertical orientation, for example, half. Thereby, as will be further described below, the nozzle can be aligned to face the leading edge of the fluid spray.

[0034]

[0042] The orientation of the nozzles and the spray angle of the supply can affect the impact pattern across the substrate. The present technique can orient the nozzles to provide a spray pattern configured to limit or prevent the interaction between fluid sprays from adjacent nozzles by limiting cancellation between the nozzles. FIG. 5 shows a schematic diagram of exemplary cleaning nozzle angles according to some embodiments of the present technique and may show further details of the plurality of aspects of the cleaning nozzle arrangement described above. Again, although shown in a horizontal orientation, the figure may encompass a plurality of aspects in any orientation. Further, in a plurality of embodiments where the substrate can be rotated, the figure may show a configuration and / or nozzle orientation in which the substrate can be rotated in either an in-page or out-of-page direction. As described above, each fluid nozzle can provide a spray pattern 425 characterized by a spray angle. The fluid port 420 and / or the fluid spray 425 may be characterized by a leading edge 505 that can be characterized by a shorter distance of the supply of the fluid spray toward the substrate to the substrate, and a trailing edge 510 that can be characterized by a longer distance to the substrate. In some embodiments of the present technique, each fluid nozzle may be angled with respect to the substrate 405 (or the seating position for the substrate within the cleaning chamber) to produce an interior angle 515 at the leading edge of about 90° or more. For example, as shown, each nozzle is angled such that the interior angle 515 at the intersection between the leading edge of the fluid port or the supplied fluid and the position across the substrate 405 is 90°.

[0035]

[0043] When the fluid nozzle is arranged perpendicular to the substrate surface (without angling or facing the substrate directly), the fluid spray will contact and spread over the substrate in all directions (such as the opposing lateral or all directions of the cone). Similarly oriented adjacent fluid nozzles will send the fluid back to the fluid flowing from the first nozzle, reducing the force between the flows, generating eddy currents across the substrate, and there is a possibility that the flow at a specific position will stagnate. Since the particles may have an attractive force such as the van der Waals force to the surface, the stagnation can prevent the particles from detaching. Furthermore, for the particles that can initially detach, they may be reattracted to the surface by the flow extending to the position of the vortex or another stagnation point, and the attractive force may be sufficient to reattach the particles. The present technology provides angled fluid nozzles and supplies the fluid in a controlled pattern to limit or prevent the interference of the flow between the nozzles. Thereby, a more similar flow and flow force across the substrate can be ensured. This makes it easier to detach the particles from the substrate, allows maintaining sufficient force in the flow rate pattern, and can ensure complete removal of the particles from the surface.

[0036]

[0044] The amount of the impinging flow may cause a specific amount of interaction between the fluid streams, but the increase in force at the leading edge may result in overcoming the backflow at the trailing edge of the reduced stream, especially at the fluid pressure as will be described below, and may limit any influence on the flow rate pattern. Due to the tolerances in both the flow rate and the installation, the angles may overlap by about 2° or less to limit the interaction, but in multiple embodiments, the angle with respect to the substrate at the leading edge may necessarily be about 85° or more, about 88° or more, about 89° or more, about 90° or more, about 92° or more, about 94° or more, about 96° or more, about 98° or more, about 100° or more, about 105° or more, about 110° or more, about 115° or more, about 120° or more, or more.

[0037]

[0045] The outer angle 520 at the trailing edge may also be controlled by the distance from the substrate on which the nozzle is disposed. In some embodiments, the outer angle 520 may be controlled to be about 160° or less, about 155° or less, about 150° or less, about 145° or less, about 140° or less, about 135° or less, about 130° or less, about 125° or less, about 120° or less, about 115° or less, about 110° or less, about 105° or less, about 100° or less, or maintained below that. By controlling the distance to the substrate and maintaining a lower outer angle, the force applied at the trailing edge may be closer to the force applied at the leading edge, whereby in some embodiments of the present technology more uniform cleaning may be provided.

[0038]

[0046] In some embodiments, to facilitate particle removal across the substrate, the cleaning fluid may be supplied at a pressure from each fluid nozzle of about 200 psi or more, about 250 psi or more, about 300 psi or more, about 350 psi or more, about 400 psi or more, about 450 psi or more, about 500 psi or more, about 550 psi or more, about 600 psi or more, about 650 psi or more, about 700 psi or more, or above that. In a plurality of embodiments where a chemical mechanical polishing process has been previously performed or otherwise a substantially planar surface is formed, the pressure may be maintained at about 500 psi or more. When a large number of features are formed across the substrate, higher pressures can result in damage or pattern collapse. However, some embodiments of the present technology may be performed, in particular, on substrates characterized by a substantially planar profile within the tolerances of the previous process. This allows the fluid pressure to be increased, further reducing and removing particles contaminating the surface of the substrate. Further, in some embodiments, the first surface may be cleaned by supplying fluid at a first fluid pressure, and the second surface on the opposite side of the first surface may be cleaned by supplying fluid at a second fluid pressure different from the first fluid pressure. This may take into account the various topographies and materials exposed across the surface.

[0039]

[0047] According to some embodiments of the present technology, the fluid used as the cleaning fluid may include any fluid or etchant material that can be sprayed as described above. For example, the cleaning fluid may include deionized water, acidic fluids such as hydrofluoric acid, basic fluids such as ammonium hydroxide, or other materials as would be understood by those skilled in the art. In some embodiments, the acidic or basic solution may be diluted to limit the impact on the structure being cleaned. For example, hydrofluoric acid may be diluted with deionized water to about 500:1 or less, 700:1 or less, 800:1 or less, 900:1 or less, or 1000:1 or less, thereby reducing the amount of etching that may occur on the exposed material or features across the substrate.

[0040]

[0048] Any of these materials may be supplied alone or in any combination to perform the cleaning process. As one non-limiting example, a spray of higher pressure deionized water may be supplied first to clean the substrate of larger particles over a first period. Then, an acidic or basic fluid may be supplied over a second period at the same or different pressure, which may facilitate the removal of smaller particles. Then, subsequent deionized water spraying and drying steps may be performed to remove the acidic or basic material and clean the substrate. Any other combination or sequence is similarly encompassed by the present technology. By using different materials, the removal can be further adjusted to affect the zeta potential. Thereby, the charge of the particles across the substrate and the surface charge of the substrate itself can be adjusted. By using different fluids characterized by different charges, the charge of the particles may be adjusted to be closer to the surface charge, the attractive force may be reduced, or the particles may be more likely to repel from the surface, further improving the removal of small particles.

[0041]

[0049] The technology may also include additional aspects related to nozzles and fluid supply that may further improve cleaning or reduce cleaning time, according to some embodiments of the technology. FIG. 6 shows a schematic diagram of an exemplary nozzle orientation 600, according to some embodiments of the technology. As shown, a span 605 having a plurality of nozzles may be shown in relation to an exemplary or conceptual substrate 610. As shown, nozzles according to some embodiments of the technology may be angled not only in a first direction but also in a second direction, in some embodiments of the technology. For example, a fluid nozzle may be angled along the span 605 along the direction 615, which may exemplify a fluid nozzle angled with respect to a substrate surface as described above.

[0042]

[0050] Further, the fluid nozzle may also be angled along span 605 along direction 620, which can direct the fluid with or relative to the rotating substrate. Direction 620 may be generated by angling the fluid nozzle at any of the aforementioned angles, including any angle of orientation such as angle 417 described above. Direction 620 is shown as a straight-line orientation, but as described above, each arrow may be further oriented along the direction. Thus, it should be understood that two angular orientations can be provided, as can be readily understood by those skilled in the art. Further, the figure shows a plurality of embodiments including a first plurality of fluid nozzles oriented in direction 620 and a second plurality of fluid nozzles oriented in the opposite direction 622. Centered on the midpoint of span 605, in some embodiments, the nozzle orientation may be reversed as shown. This can ensure a consistent flow across the entire substrate relative to the rotating substrate, although other settings for a plurality of systems that may not include rotation of the substrate may also be used. Direction 620 and opposite direction 622 are shown as being angled perpendicular to span 605, but it should be understood that the angle of the nozzle may also be offset from perpendicular and angled not only along the span as described above, but also in multiple directions from the span. For example, the nozzle may be angled along direction 621, which may thus be offset from perpendicular, angled to any degree, and angled in any direction away from the span, thereby further adjusting particle removal and flow characteristics across the substrate.

[0043]

[0051] As shown, substrate 610 may be rotated in any direction. When rotated in direction 625, the fluid spray along direction 620 may be supplied in a direction complementary to the rotation and thus may have a reduced impact on the substrate. Further, when the substrate is rotated in direction 630, the fluid spray along direction 620 may be supplied in a direction opposite to the rotation and thus may have an increased impact on the substrate. Depending on the fluid pressure, the material exposed on the substrate, and the amount of force required for particle removal, the rotation of the substrate and the angle of the nozzles may promote cleaning and control the flow of fluid across the substrate. Further, in some embodiments, the angle of the fluid nozzles may vary based on the position of the fluid nozzles relative to the local position of the substrate. For example, in some embodiments, each fluid nozzle extending outward from the center may be angled along an increasing or decreasing angle gradient and may include nozzles angled in any direction within any of the angle ranges described above. This may enable further control of the fluid flow based on the difference in angular momentum at positions closer to the center of the substrate compared to positions closer to the outer edge of the substrate.

[0044]

[0052] FIG. 7 shows a schematic diagram of an exemplary nozzle orientation according to some embodiments of the present technology, showing a configuration incorporating a first plurality of fluid nozzles 705 and a second plurality of fluid nozzles 710, both shown as directions in which fluid supply can occur, such as along a second angle, and which may be enhanced by the first angle as described above. As previously shown in FIG. 4, depending on the angle or orientation, the fluid pressure and the gap distance between the nozzles, and the fluid pressure across the substrate surface, may or may not be more uniform. FIG. 7 shows a configuration in which each fluid nozzle is separated from an adjacent fluid nozzle by a gap. A second fluid line may be provided through the span. The second fluid line may supply the same or a different cleaning fluid and may supply fluid through the second plurality of fluid nozzles 710. Each nozzle of the second plurality of fluid nozzles may be positioned at a location corresponding to the gap between two fluid nozzles of the first plurality of fluid nozzles 705. This may allow for a more uniform force on the substrate surface while limiting the interaction between the fluid sprays. The pressure may be the same or different between the two pluralities of nozzles, which may take into account a plurality of spatial aspects to limit or prevent interference between the streams while maximizing particle removal across the surface of the substrate. Also, by orienting the nozzles in the same angular direction, such as the second angle described above, the streams can limit or eliminate the overlap between the first plurality of fluid nozzles and the second plurality of fluid nozzles.

[0045]

[0053] Further, in some embodiments, the first plurality of fluid nozzles and the second plurality of fluid nozzles may be directed along the same first angle as described above, or the first plurality of fluid nozzles may be directed in a first direction across the substrate and the second plurality of fluid nozzles may be directed in an opposite direction across the substrate. Further, in some embodiments, the first plurality of fluid nozzles can be used to perform a wash with a first fluid, and the second plurality of fluid nozzles can be used to perform a wash (such as a subsequent wash after the first fluid supply has been stopped) with a second fluid. Thereby, contamination of the fluid lines can be restricted and throughput can be improved in some embodiments of the present technology. To accommodate such a configuration, two fluid reservoirs may be used and coupled via spans to separate sets of nozzles.

[0046]

[0054] FIG. 8 shows a schematic diagram of an exemplary nozzle orientation according to some embodiments of the present technology, showing a configuration incorporating a first plurality of fluid nozzles 805 and a second plurality of fluid nozzles 810, both shown as directions along which fluid supply can occur, such as along a second angle, and may be enhanced by the first angle as described above. FIG. 8 may show one embodiment where multiple spans can be used, each span may include a plurality of fluid nozzles as described above. As shown, the first span may be directed in a first direction and may include a first plurality of fluid nozzles 805 arranged along the span in a line in the first direction, and the first direction may be reversed around the center of the span. Further, the second span may be directed in a second direction perpendicular to the first direction and may include a second plurality of fluid nozzles 810 arranged along the span in a line in the second direction, and the second direction may also be reversed around the center of the span. The first plurality of fluid nozzles and the second plurality of fluid nozzles may supply the same fluid, including simultaneously, but in some embodiments, the first plurality of fluid nozzles can be used to perform a wash with a first fluid, and the second plurality of fluid nozzles can be used to perform a wash with a second fluid different from the first fluid.

[0047]

[0055] FIG. 9 shows a schematic diagram of an exemplary nozzle orientation according to some embodiments of the present technology, showing a configuration incorporating a combination of nozzle configurations, including nozzles such as those shown in FIG. 7 and nozzles such as those shown in FIG. 8. For example, the first plurality of fluid nozzles may include nozzle 905 and nozzle 910, both of which are illustrated as directions in which fluid supply may occur along a second angle, etc., and may be enhanced by the first angle as described above. The configuration may also include a second plurality of fluid nozzles that may include nozzle 905 and nozzle 910, both of which are illustrated as directions in which fluid supply may occur along a second angle, etc., and may be enhanced by the first angle as described above.

[0048]

[0056] Further, the figure may show an embodiment in which multiple spans may be used, and each span may include a plurality of fluid nozzles as described above. As shown, the first span may be directed in a first direction and may include a first plurality of fluid nozzles including nozzles 905 and 910 arranged along the span in a line in the first direction, and the first direction may be reversed around the center of the span. Further, the second span may be directed in a second direction perpendicular to the first direction and may include a second plurality of fluid nozzles including nozzles 915 and 920 arranged along the span in a line in the second direction, and the second direction may also be reversed around the center of the span. The first plurality of fluid nozzles and the second plurality of fluid nozzles may supply the same fluid, including simultaneously, but in some embodiments, nozzle 905 from the first plurality of fluid nozzles and nozzle 915 from the second plurality of fluid nozzles may be used to perform cleaning with a first fluid, and nozzle 910 from the first plurality of fluid nozzles and nozzle 920 from the second plurality of fluid nozzles may be used to perform cleaning with a second fluid different from the first fluid. By utilizing a cleaning system and performing a method according to multiple embodiments of the present technology incorporating angled nozzles, improved cleaning may be performed over a range of the substrate, reducing particle incorporation and contamination compared to the prior art.

[0049]

[0057] In the foregoing description, for purposes of explanation, numerous details have been set forth in order to facilitate an understanding of various embodiments of the present technology. However, it will be apparent to those skilled in the art that some of these details may be dispensed with, or that additional details may be added, and specific multiple embodiments may still be implemented.

[0050]

[0058] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative constructions, and equivalents can be used without departing from the spirit of the embodiments. Further, some well-known processes and elements have not been described in order to avoid unnecessarily obscuring the present technology. Accordingly, the above description should not be construed as limiting the scope of the present technology.

[0051]

[0059] When a range of values is provided, unless the context clearly indicates otherwise, each intervening value between the upper and lower limits of that range is specifically disclosed down to the smallest unit of the lower limit. Any small range between any of the recited values or unrecited intervening values in the recited range, and any other recited value or intervening value in that recited range are also included. The upper and lower limits of these small ranges are individually included in or excluded from the range, and each range where either, neither, or both of the limiting values are included in the small range is also included in the technical scope, subject to any specifically excluded limiting values in the recited range. When the recited range includes one or both of the limiting values, ranges excluding either or both of those included limiting values are also included.

[0052]

[0060] As used in this specification and the claims, the singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, a reference to "a nozzle" includes a plurality of such nozzles, and a reference to "an aperture" includes references to one or more apertures known to those skilled in the art and their equivalents.

[0053]

[0061] Also, the terms "comprise(s)", "comprising", "contain(s)", "containing", "include(s)", and "including" when used in this specification and the claims are intended to specify the presence of the stated feature, integer, component, or step, but do not preclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. a substrate support having a substrate seating position; and 11. A cleaning chamber comprising: a plurality of fluid nozzles facing the substrate support, each fluid nozzle of the plurality of fluid nozzles defining a fluid port characterized by a leading edge and a trailing edge, each fluid nozzle of the plurality of fluid nozzles being angled relative to the substrate seating position of the substrate support to generate non-overlapping spray patterns in the same direction with an included angle of 90° or greater at an intersection position with the substrate seating position for fluid dispensed from each fluid nozzle at the leading edge of the fluid port.

2. The cleaning chamber of claim 1 , wherein each fluid nozzle is operable to deliver fluid at 500 psi or greater.

3. The cleaning chamber of claim 1 , wherein the plurality of fluid nozzles is a first plurality of fluid nozzles and the cleaning chamber comprises a second plurality of fluid nozzles.

4. 4. The cleaning chamber of claim 3, wherein the first plurality of fluid nozzles are aimed at the substrate seating location in a first direction and the second plurality of fluid nozzles are aimed at the substrate seating location in a second direction opposite the first direction.

5. 4. The cleaning chamber of claim 3, wherein each fluid nozzle of the first plurality of fluid nozzles is separated from each adjacent fluid nozzle of the first plurality of fluid nozzles by a gap, and each fluid nozzle of the second plurality of fluid nozzles is disposed at a position corresponding to a gap between two fluid nozzles of the first plurality of fluid nozzles.

6. 4. The cleaning chamber of claim 3, wherein each fluid nozzle of the first plurality of fluid nozzles is arranged along a straight line in a first direction across the cleaning chamber and each fluid nozzle of the second plurality of fluid nozzles is arranged along a straight line in a second direction across the cleaning chamber perpendicular to the first direction.

7. a first washing fluid reservoir fluidly coupled to the first plurality of fluid nozzles in the washing chamber; and The washing chamber of claim 3 , further comprising a second washing fluid reservoir fluidly coupled to the second plurality of fluid nozzles in the washing chamber.

8. The washing chamber of claim 7 , wherein the first washing fluid reservoir contains a first washing fluid and the second washing fluid reservoir contains a second washing fluid different from the first washing fluid.

9. The wash chamber of claim 1 , wherein each fluid port is characterized by a slit opening.

10. placing a substrate in a substrate cleaning chamber; and spraying cleaning fluid onto the substrate from a plurality of fluid nozzles within the substrate cleaning chamber; wherein each fluid nozzle of the plurality of fluid nozzles is angled relative to the substrate such that an included angle between the cleaning fluid and the substrate along a leading edge of the supply from each fluid nozzle is 90 degrees or greater, producing co-directed, non-overlapping spray patterns.

11. The method of cleaning a substrate of claim 10, further comprising rotating the substrate in the substrate cleaning chamber while spraying the cleaning fluid.

12. 12. The method of cleaning a substrate of claim 11, wherein the cleaning fluid is sprayed at a fluid pressure of 250 psi or less.

13. reversing the direction of rotation; and The method of cleaning a substrate of claim 11 , further comprising continuing to spray the cleaning fluid onto the substrate.

14. 11. The method of cleaning a substrate of claim 10, wherein the cleaning fluid is sprayed at a fluid pressure of 500 psi or greater.

15. 11. The method of cleaning a substrate of claim 10, wherein the cleaning fluid comprises deionized water, hydrofluoric acid, or ammonium hydroxide.

16. The cleaning fluid comprises a first cleaning fluid, and the method further comprises: ceasing spraying of the first cleaning fluid; and The method of cleaning a substrate of claim 10, further comprising spraying the substrate with a second cleaning fluid.

17. 20. The method of cleaning a substrate of claim 16, wherein the plurality of fluid nozzles is a first plurality of fluid nozzles and the second cleaning fluid is sprayed from a second plurality of fluid nozzles.

18. 20. The method of substrate cleaning of claim 17, wherein each fluid nozzle of the first plurality of fluid nozzles is arranged along a straight line in a first direction across the substrate cleaning chamber, and each fluid nozzle of the second plurality of fluid nozzles is arranged along a straight line in a second direction across the substrate cleaning chamber perpendicular to the first direction.

19. a substrate support having a substrate seating position; and a plurality of fluid nozzles facing the substrate support, each fluid nozzle of the plurality of fluid nozzles defining a fluid port characterized by a spray angle having a leading spray edge and a trailing spray edge, each fluid nozzle of the plurality of fluid nozzles being angled with respect to the substrate seating position of the substrate support such that the leading spray edges of the spray angles of the fluid ports of each fluid nozzle of the plurality of fluid nozzles intersect at a location intersecting the substrate seating position at an included angle of 90 degrees or greater, to generate non-overlapping spray patterns aligned in the same direction.

20. 20. The cleaning chamber of claim 19, wherein the substrate support comprises a rotatable drum, the plurality of fluid nozzles are coupled along a sidewall of the cleaning chamber exterior to the rotatable drum, and each fluid nozzle is operable to supply fluid at 500 psi or greater.

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