SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Abstract

To provide a technique for preventing the spread of particles.SOLUTION: A substrate processing device includes a chamber, a member provided in the chamber, a light source configured to emit laser light, an optical waveguide optically connected to the light source and configured to guide the laser light emitted from the light source, and an optical system provided on the periphery of the member and optically connected to the optical waveguide and configured to emit the laser light emitted from the light source and guided by the optical waveguide to be focused at a focal point around the periphery of the member.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] SUMMARY Exemplary embodiments of the present disclosure relate to substrate processing apparatus and methods. [Background technology]

[0002] Patent Document 1 describes a technology related to optical tweezers that utilizes the mechanical properties of light. In this technology, a radially polarized laser beam is used as the light beam of the optical tweezers. This radially polarized laser beam is generated directly from a radially polarized laser beam generating optical resonator, and is composed only of p-polarized components, without any s-polarized components. A reflecting mirror is used to guide the laser beam, and an immersion lens is used to focus it. This makes it possible to trap fine particles that are larger than the wavelength of light and are in a vacuum or liquid. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2008-137104 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for suppressing particle diffusion. [Means for solving the problem]

[0005] In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus includes a chamber, a member, a light source, an optical waveguide, and an optical system. The member is provided in the chamber. The light source is configured to emit laser light. The optical waveguide is optically connected to the light source and configured to guide the laser light emitted from the light source. The optical system is provided on the outer periphery of the member, optically connected to the optical waveguide, and configured to emit the laser light emitted from the light source and guided by the optical waveguide so as to focus the laser light at a focal point around the member. Effect of the Invention

[0006] According to one exemplary embodiment, it is possible to suppress the diffusion of particles. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 illustrates a substrate processing apparatus according to an exemplary embodiment. [Diagram 2] FIG. 1 is a diagram illustrating a schematic configuration of an optical system according to an example. [Diagram 3] FIG. 2 is a diagram illustrating a schematic diagram of a function of an optical system according to an example using a cross-sectional shape of the optical system. [Figure 4] FIG. 13 is a diagram illustrating a function of another optical system according to an example, using a cross-sectional shape of the optical system. [Diagram 5] FIG. 13 is a diagram illustrating a function of another optical system according to an example, using a cross-sectional shape of the optical system. [Figure 6] 1 is a flow diagram illustrating a substrate processing method according to an exemplary embodiment. [Figure 7] 11 is a flow diagram illustrating another substrate processing method according to an exemplary embodiment. [Figure 8] FIG. 13 is a diagram illustrating a function of another optical system according to an example, using a cross-sectional shape of the optical system. [Figure 9] FIG. 13 is a diagram illustrating a function of another optical system according to an example, using a cross-sectional shape of the optical system. [Figure 10] FIG. 1 illustrates a substrate processing apparatus according to another exemplary embodiment. [Figure 11] FIG. 1 illustrates a substrate processing apparatus according to another exemplary embodiment. [Figure 12] FIG. 1 illustrates a substrate processing apparatus according to another exemplary embodiment. [Figure 13] FIG. 1 illustrates a substrate processing apparatus according to another exemplary embodiment. [Figure 14] FIG. 1 illustrates a substrate processing apparatus according to another exemplary embodiment. [Figure 15] FIG. 1 illustrates a substrate processing apparatus according to another exemplary embodiment. [Figure 16] FIG. 1 illustrates a substrate processing apparatus according to another exemplary embodiment. [Figure 17] FIG. 1 illustrates a substrate processing apparatus according to another exemplary embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Various exemplary embodiments are described below.

[0009] In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus may include a chamber, a substrate support, a light source, an optical waveguide, and an optical system. The substrate support may be provided in the chamber and configured to support a substrate. The light source may be configured to emit laser light. The optical waveguide may be optically connected to the light source and configured to guide the laser light emitted from the light source. The optical system may be provided on an outer periphery of the substrate support, optically connected to the optical waveguide, and configured to emit the laser light emitted from the light source and guided by the optical waveguide so as to focus the laser light at a focal point around the outer periphery.

[0010] The particles around the outer periphery can be collected at a focal point by the laser light. In this case, the laser light collected at the focal point can function as optical tweezers for the particles. Therefore, it is possible to prevent the particles generated in the chamber from diffusing into the chamber during substrate processing.

[0011] In one exemplary embodiment, the optical system may include a light diffusing section and a light collecting section. The light guide may extend from below the substrate support toward a surface of the substrate support on which the substrate is placed. The light diffusing section may be optically connected to the light guide via an end of the light guide. The light collecting section may be optically connected to the reflecting section and configured to collect the laser light emitted from the reflecting section to a focal point.

[0012] In one exemplary embodiment, the optical system may further include a reflecting section. The light diffusing section may be configured to emit the laser light guided by the light guide toward the surface toward the surface while diffusing the laser light along the surface. The reflecting section may be provided on the light diffusing section, optically connected to the light diffusing section, and configured to emit the laser light emitted by the light diffusing section toward the surface toward a light collecting section provided adjacent to the reflecting section. The light collecting section may be optically connected to the reflecting section, and configured to collect the laser light emitted from the reflecting section at a focal point.

[0013] In one exemplary embodiment, the light collecting portion may have a convex shape that protrudes from the outer periphery toward the focal point.

[0014] In one exemplary embodiment, the light collecting portion may have a concave shape that is recessed from the focal point toward the inside of the periphery.

[0015] In one exemplary embodiment, the light collecting portion may be recessed in a recess provided on the periphery between the reflecting portion and the focal point.

[0016] In one exemplary embodiment, the laser beam source may further include an edge ring disposed around the outer periphery. The focal point may be between the outer periphery and an inner surface of the edge ring. The inner surface may have a concave shape that is recessed from the focal point toward the inside of the edge ring and is configured to reflect the laser beam emitted from the focusing portion and focus the laser beam at the focal point.

[0017] In one exemplary embodiment, the device may further include a control unit configured to control starting and stopping of output of laser light by the light source.

[0018] In one exemplary embodiment, the apparatus may further include a gas source group. After starting the output of the laser light, the control unit may carry the substrate into the chamber, perform substrate processing on the substrate using gas supplied from the gas source group, and then stop the output of the laser light after carrying out the substrate from the chamber. Furthermore, the control unit may be configured to control the apparatus to remove particles using gas supplied from the gas source group after stopping the output of the laser light.

[0019] In one exemplary embodiment, the control unit may repeat a series of processes including loading the substrate into the chamber, performing substrate processing, and unloading the substrate from the chamber multiple times after starting the output of the laser light. Furthermore, the control unit may be configured to control the laser light output to stop and perform particle removal after repeating the series of processes multiple times.

[0020] In one exemplary embodiment, the substrate processing can be a plasma processing in which a substrate supported by a substrate support is processed using a plasma.

[0021] In one exemplary embodiment, the substrate support includes an electrostatic chuck, which may include a periphery.

[0022] In one exemplary embodiment, a substrate processing method is provided that is performed in a substrate processing apparatus. The substrate processing apparatus may include a chamber, a substrate support, a light source, an optical waveguide, an optical system, and a group of gas sources. The substrate support may be provided in the chamber and configured to support the substrate. The light source may be configured to emit a laser beam. The optical waveguide may be optically connected to the light source and configured to guide the laser beam emitted from the light source. The optical system may be provided on the outer periphery of the substrate support, optically connected to the optical waveguide, and configured to emit the laser beam guided by the optical waveguide so as to be focused at a focal point around the outer periphery. The substrate processing method may include a step of starting output of the laser beam, a step of loading the substrate into the chamber, and a step of performing substrate processing on the substrate using a gas supplied from the group of gas sources. The method may further include a step of unloading the substrate from the chamber, a step of stopping output of the laser beam, and a step of removing particles using a gas supplied from the group of gas sources.

[0023] In one exemplary embodiment, after a series of processes including a step of loading a substrate, a step of performing substrate processing, and a step of unloading the substrate are repeated multiple times, a step of stopping the output of the laser light may be performed, and then a step of removing particles may be performed.

[0024] In one exemplary embodiment, the substrate processing can be a plasma processing in which a substrate is processed using a plasma.

[0025] In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus includes a chamber, a member, a light source, an optical waveguide, and an optical system. The member is provided in the chamber. The light source is configured to emit laser light. The optical waveguide is optically connected to the light source and configured to guide the laser light emitted from the light source. The optical system is provided on the outer periphery of the member, optically connected to the optical waveguide, and configured to emit the laser light emitted from the light source and guided by the optical waveguide so as to focus the laser light at a focal point around the member.

[0026] The particles around the outer periphery can be collected at a focal point by the laser light. In this case, the laser light collected at the focal point can function as optical tweezers for the particles. Therefore, it is possible to prevent the particles generated in the chamber from diffusing into the chamber during substrate processing.

[0027] In one exemplary embodiment, the optical system may include a light diffusing section and a light collecting section. The light diffusing section may be optically connected to the light guide via an end of the light guide. The light collecting section may be configured to collect the laser light emitted from the light diffusing section to a focal point.

[0028] In one exemplary embodiment, the optical system may further include a reflecting section. The light diffusing section may be configured to emit the laser light guided by the optical waveguide while diffusing it. The reflecting section may be provided on the light diffusing section, optically connected to the light diffusing section, and configured to emit the laser light emitted by the light diffusing section toward a light collecting section provided adjacent to the reflecting section. The light collecting section may be optically connected to the reflecting section, and configured to collect the laser light emitted from the reflecting section at a focal point.

[0029] In one exemplary embodiment, the member may be a substrate support disposed within the chamber and configured to support a substrate.

[0030] In one exemplary embodiment, the substrate processing apparatus may further include a substrate support, a support, an exhaust pipe, and a baffle plate. The substrate support may be configured to support a substrate. The support may extend upward from a bottom of the chamber and be configured to support the substrate support. The exhaust pipe may be connected to the bottom. The baffle plate may be provided between a side wall of the chamber and the support on the exhaust pipe. The member may be the support. The light collecting unit may be provided on a side surface of the support facing the side wall, and configured to collect the laser light emitted from the reflecting unit to a focal point on the baffle plate between the side surface and the side wall.

[0031] In one exemplary embodiment, the chamber may further include a substrate support, a support, an exhaust pipe, and a baffle. The substrate support may be configured to support a substrate. The support may extend upward from a bottom of the chamber and be configured to support the substrate support. The exhaust pipe may be connected to the bottom. The baffle may be provided between the sidewall of the chamber and the support on the exhaust pipe. The baffle may have a first protrusion and a second protrusion. The first protrusion may be provided on the support and extend from the support toward the sidewall. The second protrusion may be provided on the sidewall above or below the first protrusion and extend from the sidewall toward the support. A gap is provided between the first protrusion and the sidewall, and between the second protrusion and the support. The first protrusion may be disposed on the second protrusion. The lower surface of the first protrusion and the upper surface of the second protrusion may face each other at a distance. The member may be the first protrusion. The light collecting portion may be provided on the lower surface of the first convex portion and configured to collect the laser light emitted from the reflecting portion to a focal point in the gap between the first convex portion and the second convex portion.

[0032] In one exemplary embodiment, the inner surface of the side wall may be provided with a concave shape facing the focusing portion. The focal point may be between the focusing portion and the concave shape. The concave shape may be a shape recessed toward the inside of the side wall and configured to reflect the laser light emitted from the focusing portion and focus the laser light at the focal point.

[0033] In one exemplary embodiment, a concave shape may be provided on the upper surface of the second protrusion so as to face the focusing portion. The focal point may be between the focusing portion and the concave shape. The concave shape may be a shape recessed toward the inside of the second protrusion, and may be configured to reflect the laser light emitted from the focusing portion and focus the laser light at the focal point.

[0034] In one exemplary embodiment, a substrate processing method is provided that is performed in a substrate processing apparatus. The substrate processing apparatus includes a chamber, a member, a light source, an optical waveguide, an optical system, and a gas source group. The member may be provided in the chamber. The light source may be configured to emit a laser beam. The optical waveguide may be optically connected to the light source and configured to guide the laser beam emitted from the light source. The optical system may be provided on the outer periphery of the member, optically connected to the optical waveguide, and configured to emit the laser beam guided by the optical waveguide so as to be focused at a focal point around the outer periphery. The substrate processing method may include a step of starting output of the laser beam, a step of carrying the substrate into the chamber, and a step of carrying out substrate processing of the substrate using a gas supplied from the gas source group. The method may further include a step of carrying the substrate out of the chamber, a step of stopping output of the laser beam, and a step of removing particles using a gas supplied from the gas source group.

[0035] In one exemplary embodiment, a concave member may be provided on the inner surface of the side wall so as to face the focusing portion. The focal point may be between the focusing portion and the concave member. The concave member may have a concave shape recessed toward the inside of the side wall and may be configured to reflect the laser light emitted from the focusing portion and focus the laser light at the focal point.

[0036] In one exemplary embodiment, the side wall and the second protrusion may be provided separately from each other.

[0037] Various exemplary embodiments will now be described in detail with reference to the drawings, in which the same or corresponding parts are designated by the same reference numerals.

[0038] FIG. 1 is a diagram that illustrates a schematic diagram of a substrate processing apparatus 1 according to an exemplary embodiment. The substrate processing apparatus 1 illustrated in FIG. 1 is a capacitively coupled substrate processing apparatus. The substrate processing apparatus 1 includes a chamber 10. The chamber 10 provides an internal space 10s therein. The central axis of the internal space 10s is an axis line AX that extends in the vertical direction. The z-axis direction illustrated in FIGS. 1 to 5 indicates a vertically downward direction, and the x-axis and y-axis may define a plane that is parallel to the horizontal plane and are perpendicular to the vertically downward direction (z-axis direction) (similarly in FIGS. 1 to 5).

[0039] In one embodiment, the chamber 10 includes a chamber body 12. The chamber body 12 has a generally cylindrical shape. An internal space 10s is provided in the chamber body 12. The chamber body 12 is made of, for example, aluminum. The chamber body 12 is electrically grounded. A plasma-resistant film is formed on the inner wall surface of the chamber body 12, i.e., the wall surface defining the internal space 10s. This film may be a ceramic film, such as a film formed by anodization or a film formed from yttrium oxide.

[0040] A passage 12p is formed in the sidewall of the chamber body 12. The substrate W passes through the passage 12p when being transferred between the internal space 10s and the outside of the chamber 10. A gate valve 12g is provided along the sidewall of the chamber body 12 to open and close the passage 12p.

[0041] The substrate processing apparatus 1 further includes a substrate support 16 (stage). The substrate support 16 is configured to support a substrate W placed thereon in the chamber 10. The substrate W has a substantially disk shape. The substrate support 16 is supported by a support portion 17. The support portion 17 extends upward from the bottom of the chamber body 12. The support portion 17 has a substantially cylindrical shape. The support portion 17 is made of an insulating material such as quartz or alumina.

[0042] The substrate support 16 has a lower electrode 18 and an electrostatic chuck 20. The lower electrode 18 and the electrostatic chuck 20 are provided in the chamber 10. The lower electrode 18 is made of a conductive material such as aluminum, and has a substantially disk shape.

[0043] A flow path 18f is formed in the lower electrode 18. The flow path 18f is a flow path for a heat exchange medium. As the heat exchange medium, a liquid refrigerant or a refrigerant (e.g., freon) that cools the lower electrode 18 by vaporizing is used. A supply device (e.g., a chiller unit) for the heat exchange medium is connected to the flow path 18f. This supply device is provided outside the chamber 10. The heat exchange medium is supplied from the supply device through a pipe 23a to the flow path 18f. The heat exchange medium supplied to the flow path 18f is returned to the supply device through a pipe 23b.

[0044] The electrostatic chuck 20 is provided on the lower electrode 18. The substrate W is placed on and held by the electrostatic chuck 20 when being processed in the internal space 10s.

[0045] The electrostatic chuck 20 has a body and an electrode. The body of the electrostatic chuck 20 is formed of a dielectric material such as aluminum oxide or aluminum nitride. The body of the electrostatic chuck 20 has a substantially disk shape. The central axis of the electrostatic chuck 20 substantially coincides with the axis AX. The electrode of the electrostatic chuck 20 is provided inside the body. The electrode of the electrostatic chuck 20 has a film shape. A DC power supply is electrically connected to the electrode of the electrostatic chuck 20 via a switch. When a voltage from the DC power supply is applied to the electrode of the electrostatic chuck 20, an electrostatic attractive force is generated between the electrostatic chuck 20 and the substrate W. The generated electrostatic attractive force attracts the substrate W to the electrostatic chuck 20 and the substrate W is held by the electrostatic chuck 20.

[0046] The electrostatic chuck 20 includes a substrate mounting area. The substrate mounting area is a substantially disk-shaped area. The central axis of the substrate mounting area substantially coincides with the axis AX. When the substrate W is processed in the chamber 10, it is placed on the upper surface of the substrate mounting area.

[0047] The substrate processing apparatus 1 may further include a gas supply line 25. The gas supply line 25 supplies a heat transfer gas, for example, He gas, from a gas supply mechanism to a gap between the upper surface of the electrostatic chuck 20 and the rear surface (lower surface) of the substrate W.

[0048] The substrate processing apparatus 1 may further include an insulating region 27. The insulating region 27 is disposed on the support portion 17. The insulating region 27 is disposed outside the lower electrode 18 in a radial direction relative to the axis line AX. The insulating region 27 extends in the circumferential direction along the outer circumferential surface of the lower electrode 18. The insulating region 27 is formed of an insulator such as quartz.

[0049] The substrate processing apparatus 1 further includes an upper electrode 30. The upper electrode 30 is provided above the substrate support 16. The upper electrode 30 closes the upper opening of the chamber body 12 together with a member 32. The member 32 has insulating properties. The upper electrode 30 is supported on the upper part of the chamber body 12 via the member 32.

[0050] The upper electrode 30 includes a top plate 34 and a support 36. The lower surface of the top plate 34 defines an internal space 10s. A plurality of gas discharge holes 34a are formed in the top plate 34. Each of the plurality of gas discharge holes 34a penetrates the top plate 34 in the plate thickness direction (vertical direction). The top plate 34 is made of, but is not limited to, silicon, for example. Alternatively, the top plate 34 may have a structure in which a plasma-resistant film is provided on the surface of an aluminum member. The film may be a ceramic film, such as a film formed by anodizing or a film formed from yttrium oxide.

[0051] The support 36 detachably supports the top plate 34. The support 36 is formed of a conductive material such as aluminum, for example. Inside the support 36, a gas diffusion chamber 36a is provided. From the gas diffusion chamber 36a, a plurality of gas holes 36b extend downward. The plurality of gas holes 36b communicate with the plurality of gas discharge holes 34a respectively. A gas introduction port 36c is formed in the support 36. The gas introduction port 36c is connected to the gas diffusion chamber 36a. A gas supply pipe 38 is connected to the gas introduction port 36c.

[0052] A gas source group 40 is connected to the gas supply pipe 38 via a valve group 41, a flow rate controller group 42, and a valve group 43. The gas source group 40, the valve group 41, the flow rate controller group 42, and the valve group 43 constitute a gas supply unit. The gas source group 40 includes a plurality of gas sources. Each of the valve group 41 and the valve group 43 includes a plurality of valves (e.g., on-off valves). The flow rate controller group 42 includes a plurality of flow rate controllers. Each of the plurality of flow rate controllers in the flow rate controller group 42 is a mass flow controller or a pressure-controlled flow rate controller. Each of the plurality of gas sources in the gas source group 40 is connected to the gas supply pipe 38 via the corresponding valve in the valve group 41, the corresponding flow rate controller in the flow rate controller group 42, and the corresponding valve in the valve group 43. The substrate processing apparatus 1 can supply gas from one or more selected gas sources in the gas source group 40 to the internal space 10s at individually adjusted flow rates.

[0053] A baffle plate 48 is provided between the substrate support 16 or the support portion 17 and the side wall of the chamber body 12. The baffle plate 48 can be formed, for example, by coating an aluminum member with a ceramic such as yttrium oxide. This baffle plate 48 has a large number of through holes. Below the baffle plate 48, an exhaust pipe 52 is connected to the bottom of the chamber body 12. This exhaust pipe 52 is connected to an exhaust device 50. The exhaust device 50 has a pressure controller such as an automatic pressure control valve and a vacuum pump such as a turbo molecular pump, and can reduce the pressure in the internal space 10s.

[0054] The substrate processing apparatus 1 further includes a high-frequency power supply 61. The high-frequency power supply 61 is a power supply that generates high-frequency power RF. The high-frequency power RF is used to generate plasma from the gas in the chamber 10. The frequency of the high-frequency power RF may be in the range of 27 to 100 MHz. The high-frequency power supply 61 is connected to the lower electrode 18 via a matching circuit 63 in order to supply the high-frequency power RF to the lower electrode 18. The matching circuit 63 is configured to match the output impedance of the high-frequency power supply 61 with the impedance on the load side (e.g., the lower electrode 18 side), i.e., the load impedance. The high-frequency power supply 61 may further be electrically connected to the lower electrode 18 via a power sensor 65. The power sensor 65 may include a directional coupler and a reflected wave power detector. The directional coupler is configured to at least partially provide the reflected wave from the load of the high-frequency power supply 61 to the reflected wave power detector. The reflected wave power detector is configured to detect the power level of the reflected wave received from the directional coupler. The high frequency power supply 61 does not have to be electrically connected to the lower electrode 18 , and may be connected to the upper electrode 30 via a matching circuit 63 .

[0055] The substrate processing apparatus 1 further includes a bias power supply 62. The bias power supply 62 is electrically connected to the lower electrode 18. In one embodiment, the bias power supply 62 is electrically connected to the lower electrode 18 via a low-pass filter 64.

[0056] When substrate processing (for example, plasma processing in which a substrate supported by a substrate support 16 is processed using plasma, the same applies below) is performed in the substrate processing apparatus 1, a gas is supplied to the internal space 10s. Then, high frequency power RF is supplied, thereby exciting the gas in the internal space 10s. As a result, plasma is generated in the internal space 10s. The substrate W supported by the substrate support 16 is processed by chemical species such as ions and radicals from the plasma. For example, the substrate is etched by the chemical species from the plasma. In the substrate processing apparatus 1, a pulsed negative DC voltage PV is applied to the lower electrode 18, thereby accelerating ions from the plasma toward the substrate W.

[0057] In the substrate processing apparatus 1, high frequency power RF is supplied to the lower electrode 18. Alternatively, high frequency power RF may be supplied to the upper electrode 30.

[0058] In an embodiment, the substrate processing apparatus 1 may further include a voltage sensor 78. The voltage sensor 78 is configured to directly or indirectly measure the potential of the substrate W. In the example shown in Fig. 1, the voltage sensor 78 is configured to measure the potential of the lower electrode 18. Specifically, the voltage sensor 78 measures the potential of a power supply path connected between the lower electrode 18 and the bias power supply 62.

[0059] Also, during the period when the negative pulsed DC voltage PV is applied to the lower electrode 18, the potential difference between the plasma and the lower electrode 18 (or the substrate W) becomes relatively large. Therefore, during the period when the negative pulsed DC voltage PV is applied to the lower electrode 18, secondary electrons generated by ions colliding with the substrate W are accelerated by the large potential difference applied to the sheath on the substrate W between the plasma and the lower electrode 18, and obtain large energy. Therefore, during the period when the negative pulsed DC voltage PV is applied to the lower electrode 18, the energy of the secondary electrons is relatively high, and the electron temperature in the plasma and the degree of dissociation of the gas in the plasma become high. On the other hand, during the period when the negative pulsed DC voltage PV is not applied to the lower electrode 18, the potential difference between the plasma and the lower electrode 18 (or the substrate W) becomes relatively low. Therefore, during the period when the negative polarity pulsed DC voltage PV is not applied to the lower electrode 18, the potential difference for accelerating the secondary electrons is small, so that the energy of the secondary electrons is relatively low, and the electron temperature in the plasma and the degree of dissociation of the gas in the plasma are low. Therefore, the substrate processing apparatus 1 can control the electron temperature in the plasma and the degree of dissociation of the gas in the plasma.

[0060] The substrate processing apparatus 1 further includes a controller MC. The controller MC is a computer including a processor, a storage device, an input device, a display device, etc., and controls each part of the substrate processing apparatus 1. The controller MC executes a control program stored in the storage device, and controls each part of the substrate processing apparatus 1 based on recipe data stored in the storage device. Under the control of the controller MC, a process specified by the recipe data is executed in the substrate processing apparatus 1. A substrate processing method MT1 and a substrate processing method MT2, which will be described later, can be executed in the substrate processing apparatus 1 under the control of each part of the substrate processing apparatus 1 by the controller MC.

[0061] In particular, the controller MC may be configured to control the start and stop of output of laser light (sometimes referred to as laser light LB) by the light source LS. In this case, as shown in Fig. 6 described later, the controller MC may be configured to control the substrate W to be loaded into the chamber 10 and the substrate W to be subjected to substrate processing using gas supplied from the gas source group 40 after starting output of the laser light LB. The controller MC may be configured to control the substrate W to be unloaded from the chamber 10 after the substrate processing and then to stop output of the laser light LB and to perform cleaning inside the chamber 10 using gas supplied from the gas source group 40.

[0062] The controller MC may control, as an example, a more specific process as shown in Fig. 7 described later. That is, the controller MC may be configured to control, after starting the output of the laser light LB, to load the substrate into the chamber 10, perform substrate processing using gas supplied from the gas source group 40, and unload the substrate from the chamber 10. The controller MC may be further configured to control, after the unloading, to repeat a series of processes multiple times for cleaning the interior of the chamber 10 using gas supplied from the gas source group 40. The controller MC is further configured to control, after repeating this series of processes multiple times, to stop the output of the laser light LB and clean the interior of the chamber 10 using gas supplied from the gas source group 40.

[0063] To further explain the configuration of the substrate processing apparatus 1, reference will be made below to Figs. 2 to 5 in addition to Fig. 1. Fig. 2 is a diagram that illustrates a configuration of an optical system 81 according to an example. Fig. 3 is a diagram that illustrates a function of the optical system 81 according to an example, using a cross-sectional shape of the optical system 81. Fig. 4 is a diagram that illustrates a function of another optical system 81 according to an example, using a cross-sectional shape of the optical system 81. Fig. 5 is a diagram that illustrates a function of another optical system 81 according to an example, using a cross-sectional shape of the optical system 81.

[0064] The substrate processing apparatus 1 further includes a light source LS, an optical waveguide 80, and an optical system 81. The light source LS is configured to emit a laser beam LB. The laser beam LB emitted by the light source LS passes through a material of an outer periphery of a substrate support 16 (stage). In the example shown in FIGS. 3 to 5, the outer periphery of the substrate support 16 is the outer periphery ED of the electrostatic chuck 20. In this case, the laser beam LB emitted by the light source LS passes through the material of the electrostatic chuck 20 (e.g., Al 2 O 3 In the following, in this embodiment, as an example, the outer periphery of the substrate support 16 is described as the outer periphery ED of the electrostatic chuck 20.

[0065] The optical waveguide 80 is optically connected to the light source LS. The optical waveguide 80 is configured to guide the laser light LB emitted from the light source LS. The optical waveguide 80 may be an optical fiber.

[0066] The optical system 81 is provided on the outer periphery ED of the substrate support 16 (stage). The optical system 81 is optically connected to an optical waveguide 80. The optical system 81 is configured to emit laser light LB emitted from the light source LS and guided by the optical waveguide 80 toward a focal point FC (a circumference FCL including the focal point FC) located around the outer periphery ED.

[0067] The focal point FC may be on a circumference FCL that is virtually provided to surround the outer periphery ED. For example, there may be a plurality of focal points FC on the circumference FCL. For example, there may be a case where one focal point FC constitutes the circumference FCL, but in this case, the focal point FC is not a single point but is ring-shaped (ring).

[0068] The optical system 81 has a light diffusing portion 81a, a reflecting portion 81b, and a light collecting portion 81c. The optical waveguide 80 extends from below the substrate support 16 toward the front surface FA of the substrate support 16 on which the substrate is placed.

[0069] The light diffusion portion 81a is optically connected to the light guide 80 via an end of the light guide 80. The laser light LB emitted from the end of the light guide 80 enters the light diffusion portion 81a via an incident surface of the light diffusion portion 81a. The incident surface extends along the surface FA of the substrate support 16 (electrostatic chuck 20). The light diffusion portion 81a is configured to emit the laser light LB guided toward the surface FA by the light guide 80 toward the surface FA while diffusing the laser light LB along the surface FA. The laser light LB diffused by the light diffusion portion 81a is emitted from an exit surface of the light diffusion portion 81a. The exit surface extends along the surface FA of the substrate support 16 (electrostatic chuck 20) ​​and the incident surface of the light diffusion portion 81a. The surface FA and the outer periphery ED may be included in the electrostatic chuck 20.

[0070] The reflecting portion 81b is provided on the light diffusing portion 81a. The reflecting portion 81b is optically connected to the light diffusing portion 81a. The reflecting portion 81b is configured to emit the laser light LB emitted by the light diffusing portion 81a toward the surface FA toward the light collecting portion 81c provided adjacent to the reflecting portion 81b.

[0071] The light collecting section 81c is optically connected to the reflecting section 81b. The light collecting section 81c is configured to collect the laser light LB emitted from the reflecting section 81b (more generally, the laser light LB emitted from the light diffusing section 81a, the same as in FIGS. 3 to 5) at a focal point FC.

[0072] In one embodiment, the light collecting portion 81c may be embedded in a recess provided in the outer circumferential portion ED between the reflecting portion 81b and the focal point FC, as shown in FIG.

[0073] In another embodiment, the light collecting portion 81c may have a convex shape that protrudes from the outer periphery ED toward the focal point FC, as shown in FIG.

[0074] In another embodiment, the light collecting portion 81c may have a concave shape recessed from the focal point FC toward the inside of the outer circumferential portion ED as shown in Fig. 5. The light collecting portion 81c shown in Fig. 5 may have a shape having a uniform thickness from the outside to the inside, or may have a shape in which the thickness increases from the outside to the inside (the curvature varies from the outside to the inside) as shown in Fig. 5. In this way, for the light collecting portion 81c shown in Fig. 5, a shape and material suitable for collecting the laser light LB emitted from the light collecting portion 81c at the focal point FC can be suitably selected.

[0075] The combination of the material of the electrostatic chuck 20 and the material of the light collecting portion 81c is such that the laser light LB emitted from the light collecting portion 81c can be converged to a focal point FC depending on the shape of the light collecting portion 81c. For example, as long as the light collecting portion 81c has resistance to substrate processing (e.g., resistance to plasma) and transmits the laser light LB, a plurality of materials can be applied by adjusting the shape of the light collecting portion 81c. The material of the light collecting portion 81c can be, for example, an oxide or compound containing Si, Al, Y, Hf, Zr, or Zn.

[0076] In the case shown in FIG. 3, the material of the electrostatic chuck 20 is, for example, Al. 2 O 3 In this case, the material of the light collecting portion 81c embedded in the recess of the outer peripheral portion ED is Al. 2 O 3 The material has a refractive index greater than 100 nm, which may be, for example, AlN.

[0077] In the case shown in FIG. 4, the material of the light collecting portion 81c having a convex shape is the same as the material of the electrostatic chuck 20 (e.g., Al 2 O 3 )

[0078] In the case shown in FIG. 5, the material of the light collecting portion 81c having a concave shape is a material that is resistant to substrate processing, and may be, for example, quartz.

[0079] 3 to 5, when the substrate processing apparatus 1 includes an edge ring ER, the material of the edge ring ER including the concave inner surface SF may be, for example, quartz, which is resistant to substrate processing. A reflector having a shape similar to that of the light collecting portion 81c shown in FIG. 5 may be provided on the inner surface SF of the edge ring ER. The material of this reflector may be a material that is resistant to substrate processing.

[0080] In an embodiment, the electrostatic chuck 20 of the substrate processing apparatus 1 may further include an edge ring mounting region and an edge ring ER, as shown in Figures 3 to 5. The edge ring mounting region extends in the circumferential direction around the central axis of the electrostatic chuck 20 so as to surround the substrate mounting region.

[0081] An edge ring ER is mounted on the upper surface of the edge ring mounting area. The edge ring ER is arranged so as to surround the outer periphery ED of the substrate support 16 (electrostatic chuck 20). The edge ring ER is mounted on the edge ring mounting area so that its central axis coincides with the axis AX. The substrate W is disposed within the area surrounded by the edge ring ER. In other words, the edge ring ER is arranged so as to surround the edge of the substrate W. The edge ring ER has an annular shape.

[0082] The focal point FC is between the outer circumferential portion ED and the inner surface SF of the edge ring ER. The inner surface SF is recessed from the focal point FC toward the inside of the edge ring ER. The inner surface SF has a concave shape configured to reflect the laser light LB emitted from the focusing portion 81c and focus the laser light LB at the focal point FC.

[0083] The edge ring ER may be conductive. The edge ring ER may be made of, for example, silicon or silicon carbide. The edge ring ER may be made of a dielectric material such as quartz.

[0084] Reference is now made to Figures 6 and 7. Figure 6 is a flow chart showing a substrate processing method MT1 according to an exemplary embodiment. Figure 7 is a flow chart showing another substrate processing method MT2 according to an exemplary embodiment.

[0085] In the substrate processing method MT1 shown in Fig. 6, first, in step STa, output of laser light LB from light source LS is started. Particles around the outer periphery ED can be collected at a focal point FC by the laser light LB. In this case, the laser light LB collected at the focal point FC can function as optical tweezers for the particles. Therefore, it is possible to prevent particles generated in the chamber 10 from diffusing into the chamber 10 during substrate processing.

[0086] After step STa, in step ST1, the substrate W is loaded into the chamber 10. After step ST1, in step ST2, substrate processing is performed on the substrate W using gases supplied from the gas source group 40. After step ST2, in step ST3, the substrate W is unloaded from the chamber 10.

[0087] After step ST3, in step STb, the output of the laser light LB from the light source LS is stopped. After step STb, in step STc, a first cleaning is performed on the inside of the chamber 10 using gases supplied from the gas source group 40.

[0088] The first cleaning removes particles collected around the outer periphery of the outer periphery ED by the laser light LB. In the first cleaning, the particles may be removed by generating plasma, or the particles may be removed by supplying and exhausting a large flow rate of gas without using plasma. The type of gas used in the first cleaning may be selected according to the type of gas used in the substrate processing performed before the first cleaning.

[0089] The substrate processing method MT2 shown in Fig. 7 is a modified example of the substrate processing method MT1 shown in Fig. 6. In the substrate processing method MT2, a series of processes including a step STa is first performed, followed by a step ST1, a step ST2, a step ST3, and a step ST4 of performing a second cleaning using a gas supplied from a gas source group 40. The timing of performing the step ST4 of performing the second cleaning is not limited to after the step ST3 of unloading the substrate W as shown in Fig. 7 (each time the processing of the substrate W is completed one by one), but may be various. For example, the second cleaning may be performed each time the processing of a preset number of substrates W (for example, one to several lots) is completed. Alternatively, the second cleaning may be performed before or after a step of stopping the output of the laser light (for example, step STb) after a series of preset processes (for example, steps STa to ST5 shown in Fig. 6).

[0090] After this, it is determined whether or not the series of processes is to be repeated (step ST5). If the series of processes is to be repeated (if YES is determined in step ST5), the process proceeds to step ST1. If the series of processes is not to be repeated (if NO is determined in step ST5), the process proceeds to step STb. The series of processes may be repeated for each unit lot, for example.

[0091] As described above, after the series of processes is repeated a number of times (or after the series of processes is performed one or more times), step STb is performed, and then step STc is performed.

[0092] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. In addition, elements in different embodiments can be combined to form other embodiments.

[0093] For example, in one embodiment, the configuration of the optical system 81 without the reflecting portion 81b as shown in FIG. 8 may be applied. In this case, the incident surface and the exit surface of the light diffusion portion 81a extend so as to intersect with the surface FA of the substrate support 16 (electrostatic chuck 20). The optical waveguide 80 extends from below the substrate support 16 toward the surface FA of the substrate support 16 on which the substrate W is placed, in parallel with the light diffusion portion 81a. The optical waveguide 80 is bent toward the incident surface of the light diffusion portion 81a at a position parallel to the incident surface of the light diffusion portion 81a, and is optically connected to the incident surface via the end of the optical waveguide 80. The configuration of the optical system 81 without the reflecting portion 81b as shown in FIG. 8 may also be applied to the configurations of the optical system 81 shown in each of FIG. 4 and FIG. 5.

[0094] 9, an optical system 81 having no light collecting portion 81c may be used. In this case, an inner surface SF of the edge ring ER is provided to surround an outer circumferential portion ED of the electrostatic chuck 20. The laser light LB diffused by the light diffusing portion 81a and emitted from the reflecting portion 81b is reflected by the inner surface SF toward a focal point FC and collected at the focal point FC.

[0095] For example, in one embodiment, a convex lens (not shown) may be applied to the light collecting unit 81c. In this case, for example, a lens having a convex shape only on the incident side is applied to the light collecting unit 81c shown in Fig. 3, but this is not limited thereto, and a convex lens having a convex shape on both the incident side and the exit side may also be applied.

[0096] 10 to 17, the optical system 81 may be provided above the exhaust pipe 52. All of Fig. 10 to Fig. 17 show substrate processing apparatuses according to other exemplary embodiments.

[0097] 10, the optical system 81 is provided on the outer periphery of the support 17 (member) and is optically connected to the optical waveguide 80. The optical system 81 is configured to emit laser light emitted from the light source LS and guided by the optical waveguide 80 so as to be focused at a focal point FC around the support 17. The focusing unit 81c is provided on a side surface SF1 of the support 17 facing the side wall 10a of the chamber 10. The focusing unit 81c is configured to focus the laser light emitted from the reflecting unit 81b at a focal point FC located on the baffle plate 48 between the side surface SF1 and the side wall 10a.

[0098] A concave shape CF is provided on the inner surface IF of the side wall 10a so as to face the light collecting portion 81c. A focal point FC is located between the light collecting portion 81c and the concave shape CF. The concave shape CF is recessed toward the inside of the side wall 10a and is configured to reflect the laser light emitted from the light collecting portion 81c and collect the light at the focal point FC.

[0099] 11, in the configuration shown in FIG. 10, the support section 17 may have a region 17b. The region 17b includes an optical system 81. The region 17b is provided separately from the support section 17 and is incorporated into the support section 17.

[0100] The material of region 17b may be different from that of support portion 17. Region 17b is made of a material having as high a laser light transmittance as possible, and may be, for example, a ceramic material whose main raw material is Al, Y, Zr, Ti, Pb, Mg, O, F, N, or the like. Region 17b may be plasma resistant, but when a plasma resistant coating material is provided on the surface of region 17b, region 17b does not need to be plasma resistant.

[0101] It should be noted that the area 17b shown in FIG. 11 may have various sizes and shapes including an optical system 81 as shown in FIG.

[0102] As shown in FIG. 13, in the configuration shown in FIG. 10, the concave shape CF may be provided on the concave member 10b. The concave member 10b is provided on the inner surface IF of the side wall 10a so as to face the focusing portion 81c. The focal point FC is between the focusing portion 81c and the concave member 10b. The concave member 10b has a concave shape recessed toward the inside of the side wall 10a, and is configured to reflect the laser light emitted from the focusing portion 81c and focus the laser light at the focal point FC. The configuration of the concave member 10b shown in FIG. 13 can also be applied to each of the configurations of FIG. 11 and FIG. 12 (the configuration in which the support portion 17 includes the region 17b). The concave member 10b has plasma resistance. The concave shape CF provided on the concave member 10b is provided so as to have a high reflectance to the laser light.

[0103] The substrate processing apparatus 1 having the configuration shown in FIG. 14 has a baffle portion 49 instead of the baffle plate 48. The baffle portion 49 has a first protrusion 49a and a second protrusion 49b. The first protrusion 49a is provided on the support portion 17 and extends from the support portion 17 toward the side wall 10a. The second protrusion 49b is provided on the side wall 10a below the first protrusion 49a and extends from the side wall 10a toward the support portion 17. A gap is provided between the first protrusion 49a and the side wall 10a, and between the second protrusion 49b and the support portion 17. The first protrusion 49a is disposed on the second protrusion 49b. A lower surface DF of the first protrusion 49a and an upper surface UF of the second protrusion 49b face each other while being spaced apart from each other. The second protrusion 49b may be provided on the side wall 10a above the first protrusion 49a and extend from the side wall 10a toward the support portion 17.

[0104] In the configuration shown in Fig. 14, the optical system 81 is provided in the first convex portion 49a (member) and is optically connected to the optical waveguide 80. The optical system 81 is configured to emit laser light emitted from the light source LS and guided by the optical waveguide 80 so as to be focused at a focal point FC around the first convex portion 49a. The focusing portion 81c is provided on the lower surface DF of the first convex portion 49a. The focusing portion 81c is configured to focus the laser light emitted from the reflecting portion 81b at a focal point FC in the gap between the first convex portion 49a and the second convex portion 49b.

[0105] A concave shape CF is provided on the upper surface UF of the second convex portion 49b so as to face the light collecting portion 81c. A focal point FC is located between the light collecting portion 81c and the concave shape CF. The concave shape CF is recessed toward the inside of the second convex portion 49b and is configured to reflect the laser light emitted from the light collecting portion 81c and collect the light at the focal point FC.

[0106] 15, in the configuration shown in FIG. 14, the support portion 17 may have a region 17b. The region 17b includes a first convex portion 49a and an optical system 81. The region 17b is provided separately from the support portion 17 and is incorporated into the support portion 17.

[0107] Also, as shown in Fig. 16, in the configurations shown in Fig. 14 and Fig. 15, the side wall 10a and the second protrusion 49b may be provided separately from each other. The second protrusion 49b shown in Fig. 16 may be made of a material different from that of the side wall 10a and may be made of the same material as the concave member 10b shown in Fig. 13. The configuration of the second protrusion 49b shown in Fig. 16 may also be applied to the configuration shown in Fig. 15 (the configuration in which the support portion 17 includes the region 17b).

[0108] Also, as shown in FIG. 17, a plurality of reflecting portions and a plurality of wave guide portions, such as a reflecting portion 81d and a wave guide portion 81e, may be provided between the light diffusing portion 81a and the reflecting portion 81b. The light diffusing portion 81a is optically connected to the reflecting portion 81d, the reflecting portion 81d is optically connected to the wave guide portion 81e, and the wave guide portion 81e is optically connected to the reflecting portion 81b. The laser light that is incident on the light diffusing portion 81a from the light source LS through the optical waveguide 80 and diffused by the light diffusing portion 81a is reflected by the reflecting portion 81d so as to be incident on the wave guide portion 81e. The laser light reflected by the reflecting portion 81d is guided by the wave guide portion 81e to the reflecting portion 81b, incident on the reflecting portion 81b, and reflected by the reflecting portion 81b so as to be incident on the light collecting portion 81c. The configuration having the optical system 81 shown in FIG. 17 may also be applied to each of the configurations in FIG. 15 and FIG. 16 and combinations of those configurations.

[0109] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0110] 1...substrate processing apparatus, 10...chamber, 10a...side wall, 10b...concave member, 16...substrate support, 17b...area, 40...gas source group, 49...baffle portion, 49a...first convex portion, 49b...second convex portion, 80...optical waveguide, 81...optical system, 81d...reflecting portion, 81e...waveguide portion, CF...concave shape, DF...bottom surface, IF...inner surface, LB...laser light, LS...light source, ED...outer periphery, FC...focus, MT1...substrate processing method, MT2...substrate processing method, SF...inner surface, SF1...side surface, UF...upper surface, W...substrate.

Claims

1. A chamber; A member provided in the chamber; a light source configured to emit a laser beam; an optical waveguide optically connected to the light source and configured to guide the laser light emitted from the light source; an optical system provided on an outer periphery of the member, optically connected to the optical waveguide, and configured to emit laser light emitted from the light source and guided by the optical waveguide so as to be focused at a focal point on the periphery of the member; A substrate processing apparatus comprising:

2. The optical system includes a light diffusing unit and a light collecting unit, the light diffusion unit is optically connected to the optical waveguide via an end of the optical waveguide; The light collecting unit is configured to collect the laser light emitted from the light diffusing unit at the focal point. The substrate processing apparatus according to claim 1 .

3. The optical system further includes a reflecting unit, the light diffusion unit is configured to diffuse and emit the laser light guided by the optical waveguide; the reflecting section is provided on the light diffusing section, optically connected to the light diffusing section, and configured to emit the laser light emitted by the light diffusing section toward the light collecting section provided adjacent to the reflecting section; The focusing unit is optically connected to the reflecting unit and configured to focus the laser light emitted from the reflecting unit at the focal point. The substrate processing apparatus according to claim 2 .

4. The light collecting portion has a convex shape protruding from the outer circumferential portion toward the focal point. The substrate processing apparatus according to claim 2 or 3.

5. The light collecting portion has a concave shape recessed from the focal point toward the inside of the outer circumferential portion. The substrate processing apparatus according to claim 2 or 3.

6. The light collecting portion is embedded in a recess provided in the outer circumferential portion between the reflecting portion and the focal point. The substrate processing apparatus according to claim 3 .

7. Further comprising an edge ring arranged to surround the outer periphery, the focal point is between the outer periphery and an inner surface of the edge ring; the inner surface has a concave shape that is recessed from the focal point toward the inside of the edge ring and is configured to reflect the laser light emitted from the focusing portion and focus the laser light at the focal point. The substrate processing apparatus according to any one of claims 2 to 6.

8. Further comprising a control unit configured to control starting and stopping of output of the laser light by the light source. The substrate processing apparatus according to any one of claims 1 to 7.

9. Further comprising a gas source group; the control unit is configured to control, after starting output of a laser beam, to carry a substrate into the chamber, to perform substrate processing of the substrate using gases supplied from the gas source group, and, after carrying out the substrate from the chamber, to stop output of the laser beam and to perform removal of particles using the gases supplied from the gas source group. The substrate processing apparatus according to claim 8 .

10. the control unit is configured to perform control such that, after starting output of the laser light, a series of processes of carrying a substrate into the chamber, performing the substrate processing, and carrying the substrate out of the chamber is repeated a plurality of times, and then the output of the laser light is stopped and the particles are removed. The substrate processing apparatus according to claim 9 .

11. The substrate processing is a plasma processing in which a substrate supported by a substrate support provided in the chamber is processed by using plasma. The substrate processing apparatus according to claim 9 or 10.

12. the member being a substrate support disposed within the chamber and configured to support a substrate; The substrate processing apparatus according to any one of claims 1 to 10.

13. The substrate support includes an electrostatic chuck. The electrostatic chuck includes the outer periphery. The substrate processing apparatus according to claim 11 or 12.

14. a substrate support configured to support a substrate; a support extending upwardly from a bottom of the chamber and configured to support the substrate support; an exhaust pipe connected to the bottom; a baffle plate provided on the exhaust pipe between a side wall of the chamber and the support; Further comprising: The member is the support portion, The focusing unit is provided on a side surface of the support unit facing the side wall, and is configured to focus the laser light emitted from the reflecting unit to the focal point on the baffle plate between the side surface and the side wall. The substrate processing apparatus according to claim 3 .

15. a substrate support configured to support a substrate; a support extending upwardly from a bottom of the chamber and configured to support the substrate support; an exhaust pipe connected to the bottom; a baffle portion provided on the exhaust pipe between a side wall of the chamber and the support portion; Further comprising: the baffle portion has a first convex portion provided on the support portion and extending from the support portion toward the side wall, and a second convex portion provided on the side wall above or below the first convex portion and extending from the side wall toward the support portion, a gap is provided between the first protrusion and the side wall, and between the second protrusion and the support portion; the first protrusion is disposed on the second protrusion, a lower surface of the first protrusion and an upper surface of the second protrusion face each other while being spaced apart from each other; the member is the first protrusion, the focusing portion is provided on the lower surface of the first convex portion and configured to focus the laser light emitted from the reflecting portion to the focal point located in a gap between the first convex portion and the second convex portion. The substrate processing apparatus according to claim 3 .

16. The inner surface of the side wall is provided with a concave shape facing the light collecting portion, the focal point is between the light collecting portion and the concave shape, The concave shape is a shape recessed toward the inside of the side wall and is configured to reflect the laser light emitted from the focusing portion and focus the laser light on the focal point. The substrate processing apparatus of claim 14 .

17. The upper surface of the second protrusion is provided with a concave shape facing the light collecting portion, the focal point is between the light collecting portion and the concave shape, the concave shape is a shape recessed toward the inside of the second convex portion and is configured to reflect the laser light emitted from the focusing portion and focus the laser light on the focal point. The substrate processing apparatus of claim 15 .

18. A substrate processing method performed in a substrate processing apparatus, the substrate processing apparatus comprising: a chamber; a member provided in the chamber; a light source configured to emit laser light; an optical waveguide optically connected to the light source and configured to guide the laser light emitted from the light source; an optical system provided on an outer periphery of the member, optically connected to the optical waveguide, and configured to emit the laser light guided by the optical waveguide so as to be focused at a focal point around the outer periphery; and a gas source group, starting output of laser light; loading a substrate into the chamber; performing substrate processing on the substrate using gases supplied from the group of gas sources; removing the substrate from the chamber; stopping the output of the laser light; removing particles using gases supplied from the group of gas sources; Equipped with A method for processing a substrate.

19. a step of removing the particles by stopping output of the laser light after repeating a series of steps including the step of carrying in the substrate, the step of performing the substrate processing, and the step of carrying out the substrate a plurality of times; The method of claim 18.

20. The substrate processing is a plasma processing in which a substrate is processed using plasma. The substrate processing method according to claim 18 or 19.

Images