Semiconductor Processing Systems

Abstract

1. A system comprising: a semiconductor processing tool (102) including a process chamber (108); a valve module (104) configured to receive fluid from the process chamber (108) and selectably direct a flow of the fluid; and a cooling device (402) configured to provide a flow of cooling fluid to the process chamber (108), wherein the valve module (104) and the cooling device (402) are arranged in a stacked configuration.

Description

[Technical field]

[0001] The present invention relates to a system, such as a semiconductor manufacturing system, that includes a semiconductor processing tool that provides a cooling fluid for use in the semiconductor processing tool and a directed flow of process gas from the semiconductor processing tool. [Background technology]

[0002] Semiconductor foundries manufacture integrated circuit chips. In the manufacture of such devices, wafers are processed through a number of different processing stations, including stations where the wafers undergo, for example, chemical vapor deposition, physical vapor deposition, implant, etching, and lithography processes. Many of these processes involve the use of gaseous environments and often require the use of high vacuum and reduced gas pressures.

[0003] Vacuum pumps are used to provide such reduced gas pressure within the process chamber, to provide evacuation of the chamber, and to maintain the flow of process gases. Summary of the Invention [Means for solving the problem]

[0004] If the pressure in a chamber of a semiconductor processing tool is not a working vacuum, for example after the gas chamber has been evacuated to atmospheric pressure to allow for service or maintenance, a so-called "pump-down event" is performed to establish the required reduced gas pressure in the chamber. The pump-down event involves pumping gas out of the chamber to reduce the pressure in the chamber to the required level.

[0005] Vacuum and abatement systems may be used to simultaneously pump gas from multiple gas chambers of a semiconductor processing tool using a common pump through a common manifold. The inventors have recognized that in such systems, because multiple chambers are fluidly connected to a common manifold, performing a pump-down event on one of the chambers may affect conditions in the other chambers. For example, performing a pump-down event in one chamber may cause highly undesirable fluctuations in other chambers connected to the same manifold.

[0006] Aspects of the present invention provide a valve module for controlling fluids from multiple chambers of a semiconductor processing tool in a manner that reduces or eliminates such disadvantages.

[0007] In a first aspect, a system is provided that includes a semiconductor processing tool including a process chamber; a valve module configured to receive a fluid from the process chamber and selectably direct a flow of the fluid; and a cooling device configured to provide a flow of cooling fluid to the process chamber, wherein the valve module and the cooling device are arranged in a stacked configuration.

[0008] The valve module may be disposed above the cooling device.

[0009] The system may further include a common power source configured to power both the valve module and the cooling device.

[0010] The system may further include a common gaseous fluid source configured to supply gaseous fluid to both the valve module and the cooling device. The valve module may include a valve, and the valve module may be configured to actuate the valve using gaseous fluid received from the common gaseous fluid source. The valve module may include one or more conduits, and the valve module may be configured to purge the one or more conduits using gaseous fluid received from the common gaseous fluid source. The valve module may be configured to perform leak testing using gaseous fluid received from the common gaseous fluid source.

[0011] The semiconductor processing tool can include a plurality of process chambers. The valve module can be configured to receive a respective fluid from each of the plurality of process chambers and selectably direct a flow of the respective fluid. The system can include a plurality of cooling devices, each configured to provide a respective flow of cooling fluid to a respective one of the plurality of cooling chambers. The valve module and the plurality of cooling devices can be arranged in a stacked configuration.

[0012] In a further aspect, a method is provided that includes providing a semiconductor processing tool comprising a process chamber; fluidly connecting a valve module to the process chamber such that the valve module is positioned to receive fluid from the process chamber, the valve module being configured to selectably direct a flow of the fluid; fluidly connecting a cooling device to the process chamber such that the cooling device is positioned to supply a flow of cooling fluid to the process chamber; and arranging the valve module and the cooling device in a stacked configuration.

[0013] The step of placing may include placing the valve module on a cooling device.

[0014] The method may further include electrically connecting a common power source to both the valve module and the cooling device.

[0015] The method may further include fluidly connecting a common gaseous fluid source to both the valve module and the cooling device. The valve module may include a valve, and the method may further include actuating the valve with gaseous fluid received from the common gaseous fluid source. The valve module may include one or more conduits, and the method may further include purging the one or more conduits using gaseous fluid received from the common gaseous fluid source. The method may further include performing a leak test using gaseous fluid received from the common gaseous fluid source. [Brief description of the drawings]

[0016] [Figure 1] 1 is a schematic diagram (not to scale) of a semiconductor manufacturing facility. [Diagram 2] FIG. 1 is a schematic diagram (not to scale) showing a perspective view of a valve module of a semiconductor manufacturing facility. [Diagram 3] 1 is a process flow diagram illustrating certain steps in a process for pumping gas in a semiconductor manufacturing facility. [Figure 4] FIG. 1 is a schematic diagram (not to scale) showing a system in which two valve modules are mounted on top of multiple cooling devices. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] FIG. 1 is a schematic diagram (not to scale) of a semiconductor manufacturing facility 100 according to an embodiment.

[0018] The semiconductor manufacturing facility 100 includes a semiconductor processing tool 102, a valve module 104, and a number of vacuum pumps 106.

[0019] The semiconductor processing tool 102 includes a number of process chambers 108 in which semiconductor wafers undergo respective processes, examples of which include, but are not limited to, chemical vapor deposition, physical vapor deposition, implant, etch, and lithography processes.

[0020] A number of vacuum pumps 106 are configured to pump fluids (ie, process gases) through the valve module 104 and out of a process chamber 108 of the semiconductor processing tool 102 .

[0021] The valve module 104 includes a plurality of inlets 110, a plurality of multi-branch conduits 112, a first fluid line manifold 114, and a second fluid line manifold .

[0022] Each of the inlets 110 is in fluid communication with a respective process chamber 108 so as to be capable of receiving fluid pumped from the process chamber 108 .

[0023] Each multi-branch conduit 112 fluidly connects a respective inlet 110 to both a first fluid line manifold 114 and a second fluid line manifold 116. More specifically, in this embodiment, the multi-branch conduit 112 is a branched conduit including a respective first branch 118 and a second branch 120. The first branch 118 of each multi-branch conduit 112 fluidly connects a respective inlet 110 to the first fluid line manifold 114. The second branch 120 of each multi-branch conduit 112 fluidly connects a respective inlet 110 to the second fluid line manifold 116.

[0024] The valve module 104 further comprises a plurality of pressure sensors 122. Each pressure sensor 122 is operatively coupled to a respective inlet 110 or to a respective multi-branch conduit 112 at or near the inlet 110.

[0025] Each pressure sensor 122 is configured to measure a pressure associated with a respective process chamber 108. In particular, each pressure sensor 122 is configured to measure the pressure of a process gas being pumped out of a respective process chamber 108. The pressure sensors 122 are preferably located as close as possible to the outlet of the process chamber 108.

[0026] The valve module 104 further comprises a plurality of gate valves, more specifically a plurality of first gate valves 124 and a plurality of second gate valves 126. In this embodiment, the first gate valve 124 and the second gate valve 126 are pneumatic valves.

[0027] Each of the first gate valves 124 is disposed over a respective one of the first branches 118 and is configured to control the flow of fluid therethrough.

[0028] Each of the second gate valves 126 is disposed over a respective one of the second branches 120 and is configured to control the flow of fluid therethrough.

[0029] The valve module 104 further includes a valve controller 128 .

[0030] The valve controller 128 is operatively connected to each of the multiple pressure sensors 122 via a wired or wireless connection (not shown) such that pressure measurements obtained by the multiple pressure sensors 122 can be received by the valve controller 128.

[0031] Additionally, the valve controller 128 is operatively connected to each of the first gate valves 124 and each of the second gate valves 126 via respective gas lines (not shown).

[0032] 3, the valve controller 128 is configured to control the operation of the first and second gate valves 124, 126 based on pressure measurements received from the pressure sensor 122. The valve controller 128 is configured to control the operation of the first and second gate valves 124, 126 by communicating a gas fluid through the gas lines.

[0033] The valve module 104 further comprises a plurality of manual valves (i.e., valves configured to be manually operated by a human operator), more specifically, a plurality of first manual valves 130, a plurality of second manual valves 132, and a plurality of third manual valves 134.

[0034] In this embodiment, each first manual valve 130 is disposed on a respective multi-branch conduit 112 between the pressure sensor 122 of the multi-branch conduit 112 and the point at which the multi-branch conduit 112 branches.

[0035] In this embodiment, each second manual valve 132 is disposed on a respective first branch 118 of the multi-branch conduit 112 between the first gate valve 124 of the multi-branch conduit 112 and the first fluid line manifold 114 .

[0036] In this embodiment, each third manual valve 134 is disposed on a respective second branch 120 of the multi-branch conduit 112 between the second gate valve 126 of the multi-branch conduit 112 and the second fluid line manifold 116 .

[0037] Thus, in this embodiment, each of the first and second gate valves 124, 126 is disposed between a respective pair of manual valves 130-134. In particular, each first gate valve 124 is disposed between the first manual valve 130 and the second manual valve 132. Also, each second gate valve 126 is disposed between the first manual valve 130 and the third manual valve 134.

[0038] In this embodiment, the first fluid line manifold 114 is the manifold through which process gas is pumped from the process chamber 108 where the semiconductor fabrication process is taking place. The first fluid line manifold 114 may be considered the "process gas line." The second fluid line manifold 116 may be considered the "pump down gas line." The fluid line manifolds 114 and 116 are sized appropriately for the gas flow and vacuum requirements.

[0039] A pump-down event may be performed to evacuate gas from one or more of the process chambers 108, which may be at atmospheric pressure, to reduce the pressure therein to a level suitable for a semiconductor fabrication process. For convenience, the gas evacuated from the gas chambers during pump-down is referred to hereinafter as pump-down gas. In this embodiment, the second fluid line manifold 116 is the manifold through which the pump-down gas is pumped out of the process chambers 108.

[0040] An apparatus including the valve controller 128 for implementing the above configurations and performing the method steps described below may be effected by configuring or adapting any suitable apparatus, such as one or more computers or other processing devices or processors, and / or by providing additional modules. The apparatus may include a computer, a network of computers, or one or more processors for executing instructions and using data, including instructions and data in the form of one or more computer programs, stored in a machine-readable storage medium such as a computer memory, a computer disk, a ROM, a PROM, or any combination of these or other storage media.

[0041] FIG. 2 is a schematic diagram showing a perspective view of valve module 104, not to scale.

[0042] In this embodiment, certain components of the valve module 104 including, for example, at least the inlet 110, the multi-branch conduit 112, the first fluid line manifold 114, the second fluid line manifold 116, the gate valves 124, 126, the valve controller 128, and the manual valves 130, 132, 134 are configured or arranged as a single integrated unit (hereinafter referred to as the "first integrated unit"). These components are housed in a common frame 200. The frame 200 may be constructed of steel.

[0043] In some embodiments, the pressure sensor 122 may be included in the first integrated unit as well and housed in the frame 200. However, in some embodiments, the pressure sensor 122 is separate from the first integrated unit. For example, the pressure sensor 122 may be configured or arranged as a separate second integrated unit that may be coupled to the first integrated unit, for example, to the top of the first integrated unit. The second integrated unit including the pressure sensor 122 may be coupled between the process chamber 108 and the inlet 110 of the first integrated unit.

[0044] FIG. 3 is a process flow diagram illustrating certain steps of a process 300 for pumping gases in semiconductor manufacturing facility 100.

[0045] It should be noted that some of the process steps shown in the flowchart of Figure 3 and described below may be omitted, or such process steps may be performed in a different order than that presented below and shown in Figure 3. Furthermore, although all process steps are shown as separate, temporally consecutive steps for convenience and ease of understanding, some of the process steps may nevertheless actually be performed simultaneously or at least with some overlap in time.

[0046] In step s302, semiconductor manufacturing processes are performed in the process chamber 108. These semiconductor manufacturing processes generate process gases.

[0047] In this embodiment, at this stage, the first gate valve 124 is open, the second gate valve 126 is closed, and the manual valves 130-134 are all open.

[0048] In step s304, the vacuum pump 106 connected to the first fluid line manifold 114 pumps the generated process gas out of the process chambers 108 through the valve module 104. Specifically, in this embodiment, the process gas is pumped from each process chamber 108 sequentially through the inlet 110 connected thereto, the first branch 118 of the multi-branch conduit 112 connected thereto (including through a first gate valve 124 disposed thereon), and the first fluid line manifold 114.

[0049] In step s306, the pressure sensors 122 measure the pressure associated with the process chamber 108. In particular, each pressure sensor 122 measures the pressure of a process gas pumped through a respective inlet 110. In this embodiment, the pressure sensors 122 measure the pressure substantially continuously.

[0050] In step s308, the pressure sensor 122 sends the measured pressure values ​​to the valve controller 128. The valve controller 128 processes the received measured pressure values ​​substantially continuously.

[0051] In step s310, one of the process chambers 108 (hereinafter referred to as the "first process chamber 108" for convenience) is shut down for inspection, service, repair, or maintenance. In this embodiment, shutting down the first process chamber 108 includes stopping the pumping of gas from the first process chamber 108. In this embodiment, this may be accomplished by an operator closing an isolation valve of the inlet 110 associated with the first process chamber 108. In this embodiment, shutting down the first process chamber 108 may further include increasing the pressure in the first process chamber 108 to approximately atmospheric pressure. This may be accomplished by opening a valve connected to the first process chamber 108, thereby allowing gas to flow into the first process chamber 108.

[0052] In step s312, a human operator inspects, services, repairs, or performs maintenance on the first process chamber 108.

[0053] After inspection, maintenance, repair, or repair operations, a low gas pressure environment will be re-established within the first process chamber 108 so that semiconductor manufacturing processes can be performed therein.

[0054] Accordingly, in step s314, the isolation valve associated with the first process chamber 108 is reopened, thereby allowing gas to be pumped out of the first process chamber 108.

[0055] The pumping of this gas from the first process chamber 108 in step s314 is a pump-down event.

[0056] In step s316, the valve controller 128 processes the measured pressure values ​​received from the pressure sensor 122 and determines that a pump-down event is occurring.

[0057] In particular, in this embodiment, the valve controller 128 determines that a pump-down event is occurring for the first process chamber 108 in response to the measured pressure associated with the first process chamber 108 exceeding a first threshold and / or the calculated rate of increase of the measured pressure associated with the first process chamber 108 exceeding a second threshold.

[0058] The first threshold may be any suitable threshold. The second threshold may be any suitable threshold.

[0059] In some embodiments, the valve controller 128 determines that a pump-down event is occurring with respect to the first process chamber 108 in response to the measured pressure associated with the first process chamber 108 exceeding a first threshold for at least a first period of time. The first period of time may be any suitable period of time.

[0060] In some embodiments, the valve controller 128 determines that a pump-down event is occurring with respect to the first process chamber 108 in response to the calculated rate of increase of the measured pressure associated with the first process chamber 108 exceeding a second threshold for at least a second period of time. The second period of time may be any suitable period of time.

[0061] In step s318, in response to detecting a pump-down event for the first process chamber 108, the valve controller 128 controls the first gate valve 124 associated with the first process chamber 108 to close. Thus, gas flow from the first process chamber 108 to the first fluid line manifold 114 is blocked or impeded.

[0062] In this embodiment, the valve controller 128 delivers a gaseous fluid (eg, nitrogen) to the first gate valve 124 to control the first gate valve 124 .

[0063] In step s320, following closing the first gate valve 124, the valve controller 128 controls the second gate valve 126 associated with the first process chamber 108 to open, thus permitting gas flow from the first process chamber 108 to the second fluid line manifold 116.

[0064] In this embodiment, the valve controller 128 delivers the gas fluid to the second gate valve 126 to control the second gate valve 126 .

[0065] In step s322, the vacuum pump 106 connected to the second fluid line manifold 116 pumps the pump-down gas out of the first process chamber 108 through the valve module 104. Specifically, in this embodiment, the pump-down gas is pumped from the first process chamber 108 sequentially through the inlet 110 connected thereto, the second branch 120 of the multi-branch conduit 112 connected thereto (including through an open second gate valve 126 disposed thereon), and the second fluid line manifold 116.

[0066] Thus, the pump-down gas is pumped out of the first process chamber 108 to establish a resulting low gas pressure or vacuum environment therein.

[0067] In step s324, the valve controller 128 processes the measured pressure values ​​received from the pressure sensor 122 and determines that the pump-down event has ended.

[0068] In particular, in this embodiment, the valve controller 128 determines that the pump-down event of the first process chamber 108 has ended in response to the measured pressure associated with the first process chamber 108 being less than or equal to a third threshold and / or the calculated rate of decrease of the measured pressure associated with the first process chamber 108 being greater than or equal to a fourth threshold. Alternatively, the pump-down event ends after running for a preset period of time.

[0069] The third threshold may be any suitable threshold, hi some embodiments, the third threshold is less than or equal to the first threshold.

[0070] The fourth threshold may be any suitable threshold, hi some embodiments, the fourth threshold is less than or equal to the second threshold.

[0071] In some embodiments, the valve controller 128 determines that the pump-down event of the first process chamber 108 has ended in response to the measured pressure associated with the first process chamber 108 being less than or equal to a third threshold for at least a third period of time. The third period of time may be any suitable period of time.

[0072] In some embodiments, the valve controller 128 determines that the pump-down event of the first process chamber 108 has ended in response to the calculated rate of decrease of the measured pressure associated with the first process chamber 108 being greater than or equal to a fourth threshold for at least a fourth period of time. The fourth period of time may be any suitable period of time.

[0073] In step s326, in response to detecting that the pump-down event of the first process chamber 108 has ended, the valve controller 128 controls the second gate valve 126 associated with the first process chamber 108 to close. Thus, gas flow from the first process chamber 108 to the second fluid line manifold 116 is blocked or impeded.

[0074] In step s328, following closing the second gate valve 126, the valve controller 128 controls the first gate valve 124 associated with the first process chamber 108 to open, thus permitting gas flow from the first process chamber 108 to the first fluid line manifold 114.

[0075] In step s330, semiconductor manufacturing processes may be performed in the first process chamber 108. These semiconductor manufacturing processes generate process gases.

[0076] In step s332, the vacuum pump 106 connected to the first fluid line manifold 114 pumps the generated process gas out of the first process chamber 108 through the valve module 104.

[0077] Accordingly, a process 300 for pumping gas in a semiconductor manufacturing facility 100 is provided.

[0078] The above-described systems and methods tend to advantageously reduce or eliminate pump-down events that adversely affect conditions within the parallel gas chamber, which tends to be accomplished by pumping the pump-down gas into a separate manifold that is distinct from the manifold through which the process gas is pumped.

[0079] Advantageously, pump-down events and the termination of pump-down events tend to be automatically detected and mitigated.

[0080] Advantageously, the valve modules described above can be integrated in-line with a horizontal manifold that connects a semiconductor processing tool to a vacuum pump.

[0081] Advantageously, the valve modules described above tend to be robust. The vacuum modules can be fully assembled, leak checked, and pre-tested, for example, off-site prior to delivery to a semiconductor manufacturing facility, or on-site upon delivery. This tends to simplify the installation process and reduce installation time.

[0082] Advantageously, the valve modules described above tend to be modular and expandable.

[0083] Advantageously, the gas flow path components of the valve modules tend to be easy to service, repair, and replace For example, each gate valve can be isolated from the fluid flow by closing manual valves upstream and downstream from that gate valve, allowing a human operator to service, repair, or replace the gate valve.

[0084] Advantageously, the status and operating conditions of the system tend to be easily monitored, for example via the human machine interface of the valve module or remotely.

[0085] Advantageously, each valve module in the system tends to be easily controlled by the system controller, for example using a communications protocol such as EtherCAT or Ethernet.

[0086] Advantageously, the valve modules described above allow for multiple mounting options. For example, the valve modules can be suspended from the ceiling of a semiconductor manufacturing facility, which provides the advantage of not consuming floor space. Alternatively, the valve modules can be mounted on a stationary frame or other equipment.

[0087] The following describes an embodiment in which the valve module is mounted on top of other equipment, specifically a cooling device for controlling the temperature of a process chamber of a semiconductor processing tool.

[0088] 4 is a schematic diagram (not to scale) illustrating a system 400 in which two valve modules 104 are mounted on a number of cooling devices 402. The cooling devices 402 are commonly referred to as "chiller racks" or "chillers."

[0089] The system 400 includes six cooling devices 402 , two valve modules 104 , a power supply 404 , and a gas supply 406 .

[0090] In this embodiment, the valve modules 104 may be substantially similar to those described above with reference to Figures 1 and 2. Each valve module 104 is configured to receive a respective one of a plurality of pumped fluid streams from a process chamber 108 to which it is fluidly connected.

[0091] Each cooling device 402 is fluidly connected to a respective process chamber 108. Each cooling device 402 is configured to provide a flow of cooling fluid to the respective process chamber 108 to which it is connected. The cooling fluid may be used within the process chamber 108 to control the temperature.

[0092] In this embodiment, the valve modules 104 and cooling devices 402 are arranged in a stacked configuration. More specifically, each valve module is disposed above three cooling devices 402, which are themselves disposed adjacent to one another, for example, in a side-by-side configuration.

[0093] Advantageously, the stacked configuration results in a reduced footprint within a semiconductor manufacturing facility.

[0094] Furthermore, the stacked configuration tends to facilitate easier connection of the cooling device 402 and the valve module 104 to the process chamber 108. For example, the stacked configuration tends to allow for closer positioning of the cooling device 402 and / or the valve module 104 to the process chamber 108, thereby reducing the length of the conduits, resulting in shorter installation time and difficulty. Additionally, the shorter length of the conduits may reduce the likelihood of leaks from or damage to the conduits.

[0095] In this embodiment, the power supply 404 is electrically connected to each of the cooling device 402 and the valve module 104. The power supply 404 is configured to provide power to each of the cooling device 402 and the valve module 104. As such, the power supply 404 can be considered a common power source.

[0096] Advantageously, using a common power source for the cooling device 402 and the valve module 104 tends to ease installation and allow for reduced footprint and cabling.

[0097] In this embodiment, the gas source 406 is fluidly connected to each of the cooling device 402 and the valve module 104 via one or more conduits. The gas source 406 is configured to supply a gas fluid to each of the cooling device 402 and the valve module 104. As such, the gas source 406 may be considered to be a common gas source. The gas fluid may be any suitable type of gas, including, but not limited to, nitrogen gas, or CDA (clean dry gas).

[0098] Advantageously, using a common gas supply 406 for the cooling device 402 and the valve module 104 tends to ease installation and result in reduced footprint and gas fluid conduit lengths.

[0099] In this embodiment, in the valve module 104, the gas fluid received from the gas source 406 may be used to actuate the valves of the valve module 104. More specifically, the valve controller 128 of the valve module 104 may be configured to route the gas fluid to each of the first gate valves 124 and each of the second gate valves 126 via respective gas lines, thereby actuating the first and second gate valves 124, 126. The gas fluid may therefore be considered a "valve control fluid."

[0100] In this embodiment, the gas fluid received from the gas source 406 in the valve module 104 can be used to perform a purge process to purge one or more portions of the multi-branch conduit 112. More specifically, a manual operator can send a gas fluid into each of the multi-branch conduits 112 via a respective purge port of each of the multi-branch conduits 112. The gas fluid can be forced through at least a portion of the multi-branch conduit 112, thereby purging at least a portion of the multi-branch conduit 112. The gas fluid can exit the multi-branch conduit 112 through the first fluid line manifold 114 and / or the second fluid line manifold 116. Thus, the gas fluid can be considered a "purge fluid." Purging can typically be performed prior to maintenance or service of the valve module 104, such as prior to replacement of the first gate valve 124 and / or the second gate valve 126. Advantageously, the first gate valve 124 and / or the second gate valve 126 can be isolated from the rest of the system by closing the first manual valve 130, the second manual valve 132, and the third manual valve 134.

[0101] In this embodiment, the purge port of the valve module 104 may be used to perform one or more leak tests on the multi-branch conduit 112. More specifically, the valve module 104 may further include means for detecting leaks from the multi-branch conduit 112 using the purge port, or a human operator may detect the presence of a leak using appropriate sensing equipment attached to the purge port.

[0102] 4, there are six cooling devices 402 and two valve modules 104. However, in other embodiments, the system may include a different number of cooling devices and / or a different number of valve modules.

[0103] 4, each of the valve modules 104 is mounted on three cooling devices 402. However, in other embodiments, one or more of the valve modules can be mounted on a different number of cooling devices. In some embodiments, one or more cooling devices are mounted on top of one or more valve modules or other equipment.

[0104] In the above embodiment, the valve module is implemented in a semiconductor manufacturing facility to route pumped process gases, however, in other embodiments, the valve module may be implemented in different systems and used to route different types of fluids.

[0105] In the above embodiment, there is a single semiconductor processing tool that includes six gas chambers. However, in other embodiments, there is one or more semiconductor processing tools. One or more of the semiconductor processing tools may include a different number of gas chambers other than six.

[0106] In the above embodiment, there is either a single valve module, or two valve modules in the embodiment of Figure 4. However, in other embodiments, there can be a different number of valve modules.

[0107] In the above embodiment, the valve module includes six inlets and six multi-branch conduits. However, in other embodiments, the valve module includes a different number of inlets and multi-branch conduits other than six.

[0108] In the above embodiment, each multi-branched conduit includes two gate valves, one for each branch. However, in other embodiments, the multi-branched conduit includes a different number of gate valves than two. In some embodiments, the multi-branched conduit includes a single valve (e.g., a three-way valve) that is operable to direct fluid flow along a selected branch of the multi-branched conduit. In some embodiments, a plurality of gate valves are arranged along each branch. In some embodiments, the multi-branched conduit includes three or more branches, and each branch can include one or more gate valves of its own.

[0109] In the above embodiment, each multi-branched conduit includes three manual valves. However, in other embodiments, the multi-branched conduit includes a different number of manual valves than three. For example, in some embodiments, the manual valves can be omitted. In some embodiments, the multi-branched conduit includes four or more manual valves arranged along the multi-branched conduit in some suitable manner.

Description of Reference Numerals

[0110] 100 Semiconductor manufacturing equipment 102 Processing tool 104 Valve module 106 Vacuum pump 108 Process chamber 110 Inlet 112 Multi-branched conduit 114 First fluid line manifold 116 Second fluid line manifold 118 First branch 120 Second branch 122 Pressure sensor 124 First gate valve 126 Second gate valve 128 Valve controller 130 First manual valve 132 Second manual valve 134 Third manual valve 200 Frame 300 processes S302-S332 Step 400 Systems 402 Cooling device 404 Power supply 406 Gas Supply Source

Claims

1. a semiconductor processing tool including a plurality of process chambers; a valve module configured to receive a respective fluid from each of the plurality of process chambers and selectively direct flow of the respective fluid, the valve module being configured as a single integrated unit; a plurality of cooling devices configured to supply a flow of cooling fluid to the plurality of process chambers, each of the plurality of cooling devices configured to supply a respective flow of the cooling fluid to a respective one of the plurality of process chambers; Equipped with the plurality of cooling devices are disposed adjacent to one another in a side-by-side configuration; The system, wherein the valve module and the plurality of cooling devices are arranged in a stacked configuration.

2. The system of claim 1 , wherein the valve module is disposed above the plurality of cooling devices.

3. The system of claim 1 or 2, further comprising a common power source configured to provide power to both the valve module and the plurality of cooling devices.

4. The system of claim 1 , further comprising a common gaseous fluid source configured to supply gaseous fluid to both the valve module and the plurality of cooling devices.

5. The system of claim 4 , wherein the valve module comprises a valve, the valve module configured to actuate the valve with the gaseous fluid received from the common gaseous fluid source.

6. 5. The system of claim 4, wherein the valve module comprises one or more conduits, the valve module configured to purge the one or more conduits using the gaseous fluid received from the common gaseous fluid source.

7. The system of claim 4 or 5, wherein the valve modules are configured to perform a leak test using the gaseous fluid received from the common gaseous fluid source.

8. Providing a semiconductor processing tool comprising a plurality of process chambers; fluidly coupling the valve module to the plurality of process chambers such that the valve module is positioned to receive a respective fluid from each of the plurality of process chambers, the valve module being configured to selectably direct flow of the respective fluids and configured as a single integrated unit; fluidly coupling a plurality of cooling devices to a plurality of process chambers such that the plurality of cooling devices are arranged to supply a flow of cooling fluid to the plurality of process chambers, each of the plurality of cooling devices configured to supply a respective flow of the cooling fluid to a respective one of the plurality of process chambers; positioning the plurality of cooling devices adjacent to one another in a side-by-side configuration; arranging the valve module and the plurality of cooling devices in a stacked configuration; The method includes:

9. The method of claim 8 , wherein the step of disposing includes disposing the valve module above the plurality of cooling devices.

10. The method of claim 8 or 9, further comprising electrically connecting a common power source to both the valve module and the plurality of cooling devices.

11. 10. The method of claim 8 or 9, further comprising fluidly connecting a common gaseous fluid source to both the valve module and the plurality of cooling devices.

12. The method of claim 11 , wherein the valve module comprises a valve, the method further comprising actuating the valve with gaseous fluid received from the common gaseous fluid source.

13. 12. The method of claim 11, wherein the valve module comprises one or more conduits, the method further comprising purging the one or more conduits using gaseous fluid received from the common gaseous fluid source.

14. The method of claim 11 , further comprising the step of performing a leak test using gaseous fluid received from the common gaseous fluid source.

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