Polishing composition and method of use thereof

Abstract

The polishing composition comprises an abrasive, a pH adjuster, a barrier film removal rate enhancer, a low-k removal rate suppressor, an azole-containing corrosion inhibitor, and a hard mask removal rate enhancer. A method for polishing a substrate comprises applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and contacting a pad with the surface of the substrate and moving the pad relative to the substrate.

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority from U.S. Provisional Application No. 62 / 975,828, filed February 13, 2020, the contents of which are incorporated herein by reference in their entirety. [Background technology]

[0002] The semiconductor industry is constantly under pressure to improve chip performance by further miniaturizing devices through innovations in processes, materials, and integration. Previous material innovations include the introduction of copper, replacing aluminum as the conductive material in interconnect structures, and the use of tantalum (Ta) / tantalum nitride (TaN) as a diffusion barrier to isolate Cu conductive materials from non-conductive / insulating dielectric materials. Copper (Cu) was chosen as the interconnect material due to its low resistivity and excellent resistance to electromigration.

[0003] However, as newer chip features shrink, multilayer Cu / barrier / dielectric stacks must be thinner and more conformal to maintain effective interconnect resistance in the Back End of Line (BEOL). Thinner Cu and Ta / TaN barrier film schemes suffer from resistivity and flexibility in deposition. For example, at smaller dimensions and advanced manufacturing nodes, resistivity deteriorates exponentially, and transistor circuit speed improvements (at the Front End of Line (FEOL)) are halved due to delays from conductive Cu / barrier interconnects (BEOL). Ruthenium (Ru) has emerged as a leading candidate for use as a liner material, barrier layer, and conductive layer. Ruthenium has excellent Cu-diffusion resistance to dielectric layers, but can also facilitate direct copper electrical filling into small dimension trenches without a copper seed layer. In addition, ruthenium is also being investigated as a VIA material to replace traditional tungsten (W) metal. Summary of the Invention [Means for solving the problem]

[0004] This Summary is provided to introduce a selection of concepts that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in limiting the scope of the claimed subject matter.

[0005] As defined in this disclosure, unless otherwise specified, all percentages listed should be understood to be weight percentages based on the total weight of the chemical-mechanical polishing composition.

[0006] In one aspect, embodiments described herein relate to a polishing composition comprising an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hardmask removal rate enhancer.

[0007] In another aspect, embodiments described herein relate to a polishing composition that includes an abrasive; a pH adjuster; an organic acid or salt thereof; a nonionic surfactant; an azole-containing corrosion inhibitor; and an iron-containing salt.

[0008] In yet another aspect, embodiments described herein relate to a method of polishing a substrate (e.g., a substrate comprising ruthenium), comprising applying a polishing composition described herein to a surface of a substrate, where the surface comprises ruthenium or a hard mask material; and contacting a pad with the surface of the substrate and moving the pad relative to the substrate.

[0009] Other aspects and advantages of the claimed subject matter will become apparent from the following description and the appended claims. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Embodiments described in the present disclosure generally relate to a composition and a method of using the composition for polishing a substrate comprising at least a ruthenium portion and / or a hard mask portion (e.g., tungsten, carbides, nitride ceramics (e.g., TiN) and their doped derivatives), and more specifically a substrate that may comprise at least a ruthenium portion, a hard mask portion, and a copper portion. The compositions described in the present disclosure can effectively remove ruthenium and / or hard mask materials while minimizing copper corrosion (e.g., minimizing surface roughness). For example, the compositions described in the present disclosure can be used to polish films of advanced nodes comprising copper, ruthenium liners, hard mask materials (e.g., titanium and its doped derivatives, tungsten and its doped derivatives (e.g., WB 4 ), carbides (e.g., BC, B 4 C, TiC, SiC, and WC), boron-containing materials (e.g., B 6 O, BC 2 N, and AlMgB 14 ), nitride ceramic materials (e.g., SiN, TiN, and BN), barrier materials (e.g., Ta and TaN), and dielectric materials (e.g., TEOS, low-k, ultra low-k, etc.) and can be particularly useful.

[0011] Many currently available CMP slurries are specifically designed to remove materials more common in older chip designs, such as the aforementioned copper and tungsten. However, in back-end (BEOL) applications in the semiconductor industry, ruthenium is used as a liner material because it has good electrical conductivity, deposition properties, and is resistant to Cu diffusion. Unlike other materials such as cobalt and copper, ruthenium is relatively stable chemically and therefore does not degrade during polishing and can be difficult to remove. In addition, ruthenium is often used together with copper, which is a conductive layer. As mentioned above, copper is a relatively soft material and is easy to remove. Copper is essential to the function of many semiconductor devices, and the use of CMP slurries can easily strip or damage the copper layer or inlay, adversely affecting the performance of the completed device. Because copper is more susceptible to chemical attack, older CMP slurries may not be able to effectively remove ruthenium without causing harmful and unacceptable defects in the copper. As a result, less advanced slurries can result in unacceptable erosion, wafer topography, and / or removal rate selectivity for one or more components of the multi-component substrate being polished. Additionally, more complex integration schemes may use a hard mask as an etch mask along with a Ru liner and Cu conductive layer, which introduces yet another material that the polishing slurry must be able to effectively remove.

[0012] With the increasing use and shrinking size of multi-component integration schemes in semiconductor manufacturing, there is a market need for CMP slurries that can effectively polish substrates containing ruthenium, copper, and hardmask materials with minimal copper corrosion while providing favorable removal rates and selectivities to all other components.

[0013] In one or more embodiments, the polishing composition according to the present disclosure includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing anticorrosive; and a hardmask removal rate enhancer. In one or more embodiments, the polishing composition may also include a chelating agent and / or an oxidizing agent. In one or more embodiments, the polishing composition according to the present disclosure may include about 0.1 wt % to about 50 wt % of an abrasive, about 0.01 wt % to about 10 wt % of a pH adjuster, about 0.002 wt % to about 4 wt % of a barrier film removal rate enhancer, about 0.0005 wt % to about 5 wt % of a low-k removal rate inhibitor, about 0.0001 wt % to about 1 wt % of an azole-containing anticorrosive, about 0.0001 wt % to about 5 wt % of a hardmask removal rate enhancer, and the remaining wt % (e.g., about 20 wt % to about 99 wt %) of a solvent (e.g., deionized water). In one or more embodiments, the polishing composition can further comprise about 0.001 wt % to about 1 wt % of a chelating agent and / or about 0.001 wt % to about 5 wt % of an oxidizing agent.

[0014] In one or more embodiments, the present disclosure provides a concentrated polishing composition that can be diluted up to 2-fold, or up to 4-fold, or up to 6-fold, or up to 8-fold, or up to 10-fold with water prior to use. In other embodiments, the present disclosure provides a point-of-use (POU) polishing composition for use on a ruthenium-containing substrate comprising the polishing composition, water, and optionally an oxidizing agent.

[0015] In one or more embodiments, the POU polishing composition can include about 0.1 wt.% to about 12 wt.% abrasive, about 0.01 wt.% to about 5 wt.% pH adjuster, about 0.002 wt.% to about 2 wt.% barrier film removal rate enhancer, about 0.0005 wt.% to about 0.5 wt.% low-k removal rate inhibitor, about 0.0001 wt.% to about 0.1 wt.% azole-containing corrosion inhibitor, about 0.0001 wt.% to about 0.5 wt.% hardmask removal rate enhancer, optionally about 0.001 wt.% to about 5 wt.% oxidizer, and about 80 wt.% to about 99 wt.% solvent (e.g., deionized water). In one or more embodiments, the POU polishing composition can further include 0.001 wt.% to 0.1 wt.% chelating agent.

[0016] In one or more embodiments, the concentrated polishing composition may include about 1 wt% to about 50 wt% of an abrasive, about 0.1 wt% to about 10 wt% of a pH adjuster, about 0.02 wt% to about 4 wt% of a barrier film removal rate enhancer, about 0.005 wt% to about 5 wt% of a low-k removal rate inhibitor, about 0.001 wt% to about 1 wt% of an azole-containing anticorrosive, about 0.001 wt% to about 5 wt% of a hardmask removal rate enhancer, and the remaining wt% (e.g., about 20 wt% to about 98.5 wt%) of a solvent (e.g., deionized water). In one or more embodiments, the concentrated polishing composition may further include about 0.01 wt% to about 1 wt% of a chelating agent.

[0017] In one or more embodiments, the polishing composition described herein may include at least one abrasive (e.g., two or three). In some embodiments, the at least one abrasive is selected from the group consisting of cationic abrasives, substantially neutral abrasives, and anionic abrasives. In one or more embodiments, the at least one abrasive is selected from the group consisting of alumina, silica, titania, ceria, zirconia, co-formed products thereof (i.e., co-formed products of alumina, silica, titania, ceria, or zirconia), coated abrasives, surface-modified abrasives, and mixtures thereof. In some embodiments, the at least one abrasive does not include ceria. In some embodiments, the at least one abrasive may be of high purity and may include less than about 100 ppm alcohol, less than about 100 ppm ammonia, and less than about 100 parts per billion (ppb) alkali cations, such as sodium cations. The abrasive can be present in an amount from about 0.1% to about 12% (eg, from about 0.5% to about 10%), based on the total weight of the POU polishing composition, or any subrange therein.

[0018] In some embodiments, the at least one abrasive is present in an amount of about 0.1% by weight or more (e.g., about 0.5% by weight or more, about 1% by weight or more, about 2% by weight or more, about 4% by weight or more, about 5% by weight or more, about 10% by weight or more, about 12% by weight or more, about 15% by weight or more, or about 20% by weight or more) to about 50% by weight or less (e.g., about 45% by weight or less, about 40% by weight or less, about 35% by weight or less, about 30% by weight or less, about 25% by weight or less, about 20% by weight or less, about 15% by weight or less, about 12% by weight or less, about 10% by weight or less, or about 5% by weight or less) relative to the polishing composition described herein.

[0019] In one or more embodiments, the polishing composition described herein can include at least one (e.g., two or three) pH adjuster. In some embodiments, the at least one pH adjuster is selected from the group consisting of ammonium hydroxide, sodium hydroxide, potassium hydroxide, cesium hydroxide, monoethanolamine, diethanolamine, triethanolamine, methylethanolamine, methyldiethanolamine, tetrabutylammonium hydroxide, tetrapropylammonium hydroxide, tetraethylammonium hydroxide, tetramethylammonium hydroxide, ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide, dimethyldipropylammonium hydroxide, benzyltrimethylammonium hydroxide, tris(2-hydroxyethyl)methylammonium hydroxide, choline hydroxide, and any combination thereof.

[0020] In some embodiments, the at least one pH adjuster is present in an amount of about 0.01 wt % or more (e.g., about 0.05 wt % or more, about 0.1 wt % or more, about 0.5 wt % or more, about 1 wt % or more, about 2 wt % or more, about 4 wt % or more, about 5 wt % or more, about 10 wt % or more, about 15 wt % or more, or about 20 wt % or more) to about 10 wt % or less (e.g., about 9 wt % or less, about 8 wt % or less, about 7 wt % or less, about 6 wt % or less, about 5 wt % or less, about 4 wt % or less, about 3 wt % or less, about 2 wt % or less, about 1 wt % or less, about 0.5 wt % or less, about 0.2 wt % or less, or about 0.1 wt % or less).

[0021] In some embodiments, the pH value of the polishing composition can range from about 7 or more (e.g., about 7.5 or more, about 8 or more, about 8.5 or more, about 9 or more, about 9.5 or more, about 10 or more, about 10.5 or more, about 11 or more, about 11.5 or more, or about 12 or more) to about 14 or less (e.g., about 13.5 or less, about 13 or less, about 12.5 or less, about 12 or less, about 11.5 or less, about 11 or less, about 10.5 or less, about 10 or less, about 9.5 or less, or about 9 or less). Without wishing to be bound by theory, it is believed that polishing compositions having a pH of less than 7 will significantly increase copper removal rate and corrosion, and polishing compositions having a pH of greater than 14 may affect the stability of the suspended abrasive, significantly increasing the roughness and reducing the overall quality of films polished with such compositions. The relative concentrations of the components in the polishing compositions described herein can be adjusted to obtain the desired pH.

[0022] In one or more embodiments, the polishing composition described herein may include at least one (e.g., two or three) barrier film removal rate enhancing agent. In some embodiments, the at least one barrier film removal rate enhancing agent is an organic acid (e.g., a carboxylic acid, an amino acid, a sulfonic acid, or a phosphonic acid) or a salt thereof. In some embodiments, the barrier film removal rate enhancing agent may be an acid or a salt thereof selected from the group consisting of gluconic acid, lactic acid, citric acid, tartaric acid, malic acid, glycolic acid, malonic acid, formic acid, oxalic acid, acetic acid, propionic acid, peracetic acid, succinic acid, lactic acid, aminoacetic acid, phenoxyacetic acid, bicine, diglycolic acid, glyceric acid, tricine, alanine, histidine, valine, phenylalanine, proline, glutamine, aspartic acid, glutamic acid, arginine, lysine, tyrosine, benzoic acid, salts thereof, and mixtures thereof. Without wishing to be bound by theory, it is believed that an organic acid (e.g., as described above) or a salt thereof can be used as an effective barrier film removal rate enhancing agent in the polishing composition described in the present disclosure to improve the removal rate of a barrier film (e.g., a Ta film or a TaN film) in a semiconductor substrate.

[0023] In some embodiments, the barrier film removal rate enhancing agent is present in an amount of about 0.002 wt % or more (e.g., about 0.005 wt % or more, about 0.01 wt % or more, about 0.05 wt % or more, about 0.1 wt % or more, about 0.15 wt % or more, about 0.2 wt % or more, about 0.5 wt % or more, about 1 wt % or more, about 1.5 wt % or more, or about 2 wt % or more) to about 4 wt % or less (e.g., about 3.5 wt % or less, about 3 wt % or less, about 2.5 wt % or less, about 2 wt % or less, about 1.5 wt % or less, or about 1 wt % or less).

[0024] In one or more embodiments, the polishing composition described herein may include at least one (e.g., two or three) low-k removal rate inhibitor. In some embodiments, the at least one low-k removal rate inhibitor is a nonionic surfactant. In one or more embodiments, the nonionic surfactant is selected from the group consisting of alcohol alkoxylates, alkylphenol alkoxylates, tristyrylphenol alkoxylates, sorbitan ester alkoxylates, polyalkoxylates, polyalkylene oxide block copolymers, tetrahydroxy oligomers, alkoxylated diamines, and mixtures thereof. In one or more embodiments, the nonionic surfactant is a polymer having a number average molecular weight of about 500 g / mol or more, or about 1000 g / mol or more, or about 2500 g / mol or more, or about 5000 g / mol or more, or about 7500 g / mol or more, or about 10000 g / mol or more. In one or more embodiments, the nonionic surfactant is a polymer having a number average molecular weight of about 1,000,000 g / mol or less, or about 750,000 g / mol or less, or about 500,000 g / mol or less, or about 250,000 g / mol or less, or about 100,000 g / mol or less. In one or more embodiments, the alkoxylate group of the alkoxylated nonionic surfactant is an ethoxylate group, a propoxylate group, or a combination of an ethoxylate group and a propoxylate group. Without wishing to be bound by theory, it is surprising that a nonionic surfactant (e.g., as described above) can be used as a low-k removal rate inhibitor in the polishing composition described in the present disclosure to reduce or minimize the removal rate of a low-k film (e.g., a carbon-doped silicon oxide film) in a semiconductor substrate.

[0025] In some embodiments, the low-k removal rate inhibitor is present in an amount of about 0.0005 wt% or more (e.g., about 0.001 wt% or more, about 0.005 wt% or more, about 0.01 wt% or more, about 0.05 wt% or more, about 0.1 wt% or more, about 0.15 wt% or more, about 0.2 wt% or more, about 0.5 wt% or more, about 1 wt% or more, about 1.5 wt% or more, about 2 wt% or more, or about 3 wt% or more) to about 5 wt% or less (e.g., about 4.5 wt% or less, about 4 wt% or less, about 3.5 wt% or less, about 3 wt% or less, about 2.5 wt% or less, about 2 wt% or less, about 1.5 wt% or less, about 1 wt% or less, about 0.5 wt% or less, about 0.1 wt% or less, about 0.05 wt% or less, about 0.01 wt% or less, about 0.005 wt% or less).

[0026] In one or more embodiments, the polishing composition described herein can include at least one (e.g., two or three) azole-containing corrosion inhibitor. In some embodiments, the at least one azole-containing corrosion inhibitor is selected from the group consisting of substituted or unsubstituted triazoles (e.g., 1,2,4-triazoles), substituted or unsubstituted tetrazoles, substituted or unsubstituted benzotriazoles, substituted or unsubstituted pyrazoles, and substituted or unsubstituted imidazoles. In one or more embodiments, the azole-containing corrosion inhibitor is selected from the group consisting of 1,2,4-triazole, 1,2,3-triazole, tetrazole, benzotriazole, tolyltriazole, ethylbenzotriazole (e.g., 1-methylbenzotriazole, 4-methylbenzotriazole, and 5-methylbenzotriazole), ethylbenzotriazole (e.g., 1-ethylbenzotriazole), propylbenzotriazole (e.g., 1-propylbenzotriazole), butylbenzotriazole (e.g., 1-butylbenzotriazole and 5-butylbenzotriazole), pentylbenzotriazole (e.g., 1-pentylbenzotriazole), hexylbenzotriazole, ... The azole-containing corrosion inhibitor may be selected from the group consisting of benzotriazoles (e.g., 1-hexylbenzotriazole and 5-hexylbenzotriazole), dimethylbenzotriazoles (e.g., 5,6-dimethylbenzotriazole), chlorobenzotriazoles (e.g., 5-chlorobenzotriazole), dichlorobenzotriazoles (e.g., 5,6-dichlorobenzotriazole), chloromethylbenzotriazoles (e.g., 1-(chloromethyl)-1-H-benzotriazole), chloroethylbenzotriazole, phenylbenzotriazole, benzylbenzotriazole, aminotriazole, aminobenzimidazole, aminotetrazole, and mixtures thereof. Without wishing to be bound by theory, it is believed that azole-containing corrosion inhibitors (e.g., as described above) can significantly reduce or minimize the removal rate of copper in semiconductor substrates.

[0027] In some embodiments, the azole-containing corrosion inhibitor is present in an amount of about 0.0001 wt% or more (e.g., about 0.0002 wt% or more, about 0.0005 wt% or more, about 0.001 wt% or more, about 0.002 wt% or more, about 0.005 wt% or more, about 0.01 wt% or more, about 0.02 wt% or more, about 0.05 wt% or more, about 0.1 wt% or more, about 0.2 wt% or more, or about 0.5 wt% or more) to about 1 wt% or less (e.g., about 0.8 wt% or less, about 0.6 wt% or less, about 0.5 wt% or less, about 0.4 wt% or less, about 0.2 wt% or less, about 0.1 wt% or less, about 0.05 wt% or less, about 0.02 wt% or less, about 0.01 wt% or less, or about 0.005 wt% or less).

[0028] In one or more embodiments, the polishing composition described herein can include at least one (e.g., two or three) hardmask removal rate enhancing agent. In some embodiments, the at least one hardmask removal rate enhancing agent can be potassium hexacyanoferrate(II), potassium hexacyanoferrate(III), ammonium ferrous sulfate, ferrous nitrate, sodium ethylenediaminetetraacetate iron(III), iron(II) bromide, iron(III) bromide, iron(II) chloride, iron(III) chloride, iron(III) citrate, iron(II) fluoride, iron(III) fluoride, iron(II) oxalate, iron(II) perchlorate, iron(III) phosphate, iron(II) sulfate, potassium cyanide, potassium thiocyanate, thiourea, potassium tetrafluorosilicate, potassium hexafluorophosphate, potassium tetrafluoroborate, hydrofluoric acid, fluoride salts, chloric acid (HClO 3 ), chloride salts, and mixtures thereof. In some embodiments, the hardmask removal rate enhancing agent can be an iron-containing salt. In one or more embodiments, the hardmask removal rate enhancing agent can be a compound that is a reaction product of an iron salt and a cyanide salt.

[0029] In some embodiments, the hardmask removal rate enhancing agent is in an amount of about 0.0001 wt % to about 5 wt % of the composition. In one or more embodiments, the hardmask removal rate enhancing agent is in an amount of about 0.0001 wt % or more (e.g., about 0.0002 wt % or more, about 0.0005 wt % or more, about 0.001 wt % or more, about 0.002 wt % or more, about 0.005 wt % or more, about 0.01 wt % or more, about 0.02 wt % or more, about 0.05 wt % or more, about 0.1 wt % or more, about 0.2 wt % or more, or about 0.0 ...005 wt % or more, about 0.01 wt % or more, about 0.02 wt % or more, about % or more, or about 0.5% or more by weight) to about 5% by weight or less (for example, about 4% by weight or less, about 3% by weight or less, about 2% by weight or less, about 1% by weight or less, about 0.8% by weight or less, about 0.6% by weight or less, about 0.5% by weight or less, about 0.4% by weight or less, about 0.2% by weight or less, about 0.1% by weight or less, about 0.05% by weight or less, about 0.02% by weight or less, about 0.01% by weight or less, or about 0.005% by weight or less).

[0030] In one or more embodiments, the polishing composition described herein may include at least one (e.g., two or three) optional chelating agent. In some embodiments, the at least one optional chelating agent may be an amino-containing carboxylic acid (e.g., polyaminopolycarboxylic acid) or a phosphonic acid. In some embodiments, the chelating agent is selected from the group consisting of ethylenediaminetetraacetic acid, iminodiacetic acid, N-hydroxyethyl-ethylenediaminetriacetic acid, nitrilotriacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, triethylenetetraaminehexaacetic acid, diaminocyclohexanetetraacetic acid, nitrilotrimethylphosphonic acid, ethylenediaminetetra(methylenephosphonic acid), 1-hydroxylethylidene-1,1-diphosphonic acid, diethylenetriaminepenta(methylenephosphonic acid), and combinations thereof. Without wishing to be bound by theory, it is believed that the inclusion of a chelating agent (e.g., those described above) in the polishing composition described herein may significantly reduce or minimize defects observed on semiconductor substrates (e.g., defects on the surface of copper wafers).

[0031] In some embodiments, the chelating agent is present in an amount of about 0.001 wt % or more (e.g., about 0.002 wt % or more, about 0.005 wt % or more, about 0.01 wt % or more, about 0.02 wt % or more, about 0.05 wt % or more, about 0.1 wt % or more, about 0.2 wt % or more, or about 0.5 wt % or more) to about 1 wt % or less (e.g., about 0.8 wt % or less, about 0.6 wt % or less, about 0.5 wt % or less, about 0.4 wt % or less, about 0.2 wt % or less, about 0.1 wt % or less, about 0.05 wt % or less, about 0.02 wt % or less, about 0.01 wt % or less, or about 0.005 wt % or less).

[0032] An optional oxidizing agent can be added when the concentrated slurry is diluted to form the POU slurry. The oxidizing agent can be selected from the group consisting of hydrogen peroxide, periodic acid (e.g., orthoperiodic acid or metaperiodic acid), diperiodic acid (e.g., dimesoperiodic acid or diorthoperiodic acid), ammonium periodate, potassium periodate, sodium periodate, ammonium persulfate, iodic acid, iodate salts, perchloric acid, perchlorate salts, hydroxylamine and hydroxylamine salts, and any combination thereof. In one or more embodiments, the oxidizing agent can be periodic acid (e.g., orthoperiodic acid or metaperiodic acid).

[0033] In some embodiments, the oxidizing agent is present in an amount of about 0.001 wt % or more (e.g., about 0.002 wt % or more, about 0.005 wt % or more, about 0.01 wt % or more, about 0.02 wt % or more, about 0.04 wt % or more, about 0.05 wt % or more, about 0.075 wt % or more, about 0.1 wt % or more, about 0.25 wt % or more, about 0.5 wt % or more, about 0.75 wt % or more, about 1 wt % or more, about 1.25 wt % or more, about 1.5 wt % or more, or about 2 wt % or more) to about 5 wt % or less (e.g., about 4.5 wt % or less, about 4 wt % or less, about 3.5 wt % or less, about 3 wt % or less, about 2.5 wt % or less, about 2 wt % or less, about 1.5 wt % or less, about 1 wt % or less, about 0.5 wt % or less, or about 0.1 wt % or less). In some embodiments, without wishing to be bound by theory, it is believed that the oxidizing agent can aid in the removal of ruthenium in a ruthenium-containing substrate.

[0034] In some embodiments, the polishing composition described herein can include a solvent (e.g., a primary solvent) such as water. In some embodiments, the solvent (e.g., water) is present in an amount of about 20% by weight or more (e.g., about 25% by weight or more, about 30% by weight or more, about 35% by weight or more, about 40% by weight or more, about 45% by weight or more, about 50% by weight or more, about 55% by weight or more, about 60% by weight or more, about 65% by weight or more, about 70% by weight or more, about 75% by weight or more, about 80% by weight or more, about 85% by weight or more, about 90% by weight or more, about 92% by weight or more, about 94% by weight or more, about 95% by weight or more, or about 97% by weight or more) to about 99% by weight or less (e.g., about 98% by weight or less, about 96% by weight or less, about 94% by weight or less, about 92% by weight or less, about 90% by weight or less, about 85% by weight or less, about 80% by weight or less, about 75% by weight or less, about 70% by weight or less, or about 65% by weight or less).

[0035] In one or more embodiments, an optional secondary solvent (e.g., an organic solvent) can be used in the polishing composition (e.g., POU or concentrated polishing composition) of the present disclosure, which can aid in dissolving the azole-containing corrosion inhibitor. In one or more embodiments, the secondary solvent can be one or more alcohols, alkylene glycols, or alkylene glycol ethers. In one or more embodiments, the secondary solvent comprises one or more solvents selected from the group consisting of ethanol, 1-propanol, 2-propanol, n-butanol, propylene glycol, 2-methoxyethanol, 2-ethoxyethanol, propylene glycol propyl ether, dimethyl sulfoxide, and ethylene glycol.

[0036] In some embodiments, the secondary solvent is present in an amount of about 0.0025 wt % or more (e.g., about 0.005 wt % or more, about 0.01 wt % or more, about 0.02 wt % or more, about 0.05 wt % or more, about 0.1 wt % or more, about 0.2 wt % or more, about 0.4 wt % or more, about 0.6 wt % or more, about 0.8 wt % or more, or about 1 wt % or more) to about 5 wt % or less (e.g., about 4 wt % or less, about 3 wt % or less, about 2 wt % or less, about 1 wt % or less, about 0.8 wt % or less, about 0.6 wt % or less, about 0.5 wt % or less, or about 0.1 wt % or less) relative to the polishing composition described herein.

[0037] In one or more embodiments, the polishing composition described herein can contain, for example, an organic solvent, a pH adjuster, a quaternary ammonium compound (e.g., a salt or hydroxide), an amine, an alkali base (e.g., an alkali hydroxide), a fluorine-containing compound, a silicon-containing compound such as a silane (e.g., an alkoxysilane), an imine (e.g., an amidine such as 1,8-diazabicyclo[5.4.0]-7-undecene (DBU) and 1,5-diazabicyclo[4.3.0]non-5-ene (DBN)), a salt (e.g., a halide salt or a metal salt), a polymer (e.g., a cationic polymer or an anionic polymer), a surfactant (e.g., a cationic surfactant, an anionic surfactant, or a nonionic surfactant), a plasticizer, an oxidizer (e.g., H 2O 2 ), corrosion inhibitors (e.g., azole or non-azole corrosion inhibitors), and / or specific abrasives (e.g., ceria abrasives, nonionic abrasives, surface-modified abrasives, or negatively / positively charged abrasives). Halide salts that can be excluded from the polishing composition include alkali metal halides (e.g., sodium or potassium halides) or ammonium halides (e.g., ammonium chloride), and can be chlorides, bromides, or iodides. As used in this disclosure, a component that is "substantially free" from the polishing composition refers to a component that is not intentionally added to the polishing composition. In some embodiments, the polishing compositions described herein can have about 1000 ppm or less (e.g., about 500 ppm or less, about 250 ppm or less, about 100 ppm or less, about 50 ppm or less, about 10 ppm or less, or about 1 ppm or less) of one or more of the above components that are substantially free from the polishing composition. In some embodiments, the polishing compositions described herein can be completely free of one or more of the above components.

[0038] In one or more embodiments, the polishing compositions described herein can have a selectivity (or ratio) of hardmask removal rate to silicon oxide (e.g., TEOS) removal rate of about 0.25:1 or more (e.g., about 0.5:1 or more, about 0.75:1 or more, about 1:1 or more, about 1.25:1 or more, about 1.5:1 or more, about 1.75:1 or more, about 2:1 or more, about 2.25:1 or more, about 2.5:1 or more, about 2.75:1 or more, about 3:1 or more, about 3.25:1 or more, about 3.5:1 or more, or about 4:1 or more) or about 100:1 or less (e.g., about 50:1 or less, or about 10:1 or less). In one or more embodiments, the polishing composition described herein can selectively remove hard mask with respect to silicon oxide (e.g., has a hard mask removal rate higher than the silicon oxide removal rate). The term "silicon oxide" described herein is expressly intended to include both undoped silicon oxide and doped silicon oxide. For example, in one or more embodiments, the silicon oxide may be doped with at least one dopant selected from carbon, nitrogen, oxygen, hydrogen, and any other known dopant for silicon oxide. Some examples of types of silicon oxide films include TEOS (tetraethyl orthosilicate), SiOC, SiOCN, SiOCH, SiOH, and SiON.

[0039] The present disclosure also contemplates a method of using any of the above polishing compositions (e.g., concentrates or POU slurries). For concentrates, the method can include diluting the concentrate (e.g., by 2x or more) to form a POU slurry, and then contacting a surface at least partially comprising ruthenium and a hard mask material with the POU slurry. In some embodiments, an oxidizer can be added to the slurry before, after, or during the dilution. For POU slurries, the method can include contacting a surface at least partially comprising ruthenium and a hard mask material with the slurry.

[0040] In one or more embodiments, the present disclosure features a polishing method that can include applying a polishing composition according to the present disclosure to a substrate (e.g., a wafer) having at least ruthenium and a hard mask material on its surface; and contacting a pad with the surface of the substrate and moving the pad relative to the substrate. In some embodiments, when the substrate includes at least one or more silicon oxides, ruthenium, hard mask materials, and / or barrier materials (e.g., Ta, TaN), the method can effectively polish the substrate (e.g., remove at least a portion of silicon oxides, ruthenium, copper, hard mask materials, and / or barrier materials) without significant corrosion (e.g., copper corrosion) or undesirable removal rate selectivity. In one or more embodiments, the copper removal rate is less than about 100 Å / min, or less than about 90 Å / min, or less than about 80 Å / min, or less than about 70 Å / min, or less than about 60 Å / min, or less than about 50 Å / min. In one or more embodiments, the static etch rate (SER) of copper specimens incubated with the polishing composition according to the present disclosure is less than about 2.5 Å / min. In one or more embodiments, the hard mask removal rate is about 50 Å / min or more, or about 75 Å / min or more, or about 100 Å / min or more, or about 125 Å / min or more, or about 150 Å / min or more, or about 200 Å / min or more. In one or more embodiments, the ratio of ruthenium polishing rate to copper polishing rate (Ru:Cu) is about 5:1 or less, or about 4:1 or less, or about 3:1 or less, or about 2:1 or less, or about 1:1 or less.

[0041] In some embodiments, the method of using the polishing composition described herein can further include manufacturing a semiconductor device from a substrate treated with the polishing composition by one or more processes. For example, photolithography, ion implantation, dry / wet etching, plasma etching, deposition (e.g., PVD, CVD, ALD, ECD), wafer mounting, die cutting, packaging, and testing can be used to manufacture a semiconductor device from a substrate treated with the polishing composition described herein.

[0042] The following specific examples are to be construed as merely illustrative, and not limitative of the remainder of the disclosure in any way. Without further elaboration, it is believed that one skilled in the art can, based on the description of the present disclosure, utilize the present invention to its fullest extent. EXAMPLES

[0043] In these examples, polishing was performed using two polishing systems. The first polishing system was used to polish 300 mm wafers using an Ebara CMP polisher, a Fujibo soft pad, a downforce pressure of 105 hPa, and a slurry flow rate of 100 mL / min to 500 mL / min. The second polishing system was used to polish 200 mm wafers using an AMAT Mirra CMP polisher, a Fujibo soft pad, a downforce pressure of 1.5 psi, and a slurry flow rate of 100 mL / min to 400 mL / min.

[0044] The general compositions used in the following examples are set forth below in Table 1. Specific details regarding the differences in the compositions tested are explained in more detail when describing each example.

[0045] [Table 1]

[0046] Example 1 Table 2 below shows the removal rates of TEOS, tungsten doped carbide hard mask (HM), Ru, and Cu blanket wafers when polished with Compositions 1 through 4. Compositions 1 through 4 contained the same components in the same concentrations, except for the differences noted below and in Table 2.

[0047] Composition 1 contained a Cu removal rate inhibitor (Cu RRI-1), which was an azole-containing corrosion inhibitor. Compositions 2-3 each contained a hardmask removal rate enhancer (HM RRE) at the same concentration and an abrasive at a different concentration, as shown in Table 2. Composition 4 contained both an HM RRE and Cu RRI-1.

[0048] The results surprisingly showed that the addition of the HM RRE increased the HM removal rate while maintaining the Ru removal rate. Furthermore, the selectivity of the HM over TEOS removal rate was tuned to enhance the removal of HM by decreasing the amount of abrasive used.

[0049] [Table 2]

[0050] Example 2 Table 3 below shows roughness measurements on Cu blanket wafers after polishing with the indicated compositions. Ra, Rq, and Rz represent the roughness average, root mean square roughness, and average maximum profile height, respectively.

[0051] Compositions 5-7 contained the same components in the same concentrations, except for the differences noted below and shown in Table 3. Composition 5 contained only one azole-containing corrosion inhibitor (i.e., Cu RRI). Compositions 6 and 7 contained two azole-containing corrosion inhibitors (i.e., Cu RRI-1 and Cu RRI-2).

[0052] The combination of two separate azole-containing compounds (Cu RRI-1 and Cu RRI-2) reduced the Cu roughness observed after polishing.

[0053] [Table 3]

[0054] Although only a few exemplary embodiments have been described in detail above, those skilled in the art will readily appreciate that many modifications are possible in the exemplary embodiments without substantially departing from the invention, all of which are intended to be included within the scope of the present disclosure, as defined in the following claims. [1] Abrasives; pH adjuster; Barrier film removal rate enhancer; Low-k removal rate inhibitor; Azole-containing corrosion inhibitors; and Hardmask removal speed enhancer 1. A polishing composition comprising: [2] The abrasive is selected from the group consisting of alumina, silica, titania, ceria, zirconia, and co-formed products of alumina, silica, titania, ceria, and zirconia. The polishing composition according to [1], wherein the abrasive is selected from the group consisting of: a coated abrasive; a surface-modified abrasive; and mixtures thereof. [3] The polishing composition according to [1], wherein the abrasive is present in an amount of about 0.1% by weight to about 50% by weight of the composition. [4] The polishing composition according to [1], wherein the barrier film removal rate increasing agent is an organic acid or a salt thereof selected from the group consisting of gluconic acid, lactic acid, citric acid, tartaric acid, malic acid, glycolic acid, malonic acid, formic acid, oxalic acid, acetic acid, propionic acid, peracetic acid, succinic acid, lactic acid, potassium acetate, potassium citrate, aminoacetic acid, phenoxyacetic acid, bicine, diglycolic acid, glyceric acid, tricine, alanine, histidine, valine, phenylalanine, proline, glutamine, aspartic acid, glutamic acid, arginine, lysine, tyrosine, benzoic acid, salts thereof, and mixtures thereof. [5] The polishing composition according to [1], wherein the barrier film removal rate increasing agent is in an amount of about 0.002% by weight to about 4% by weight of the composition. [6] The polishing composition according to [1], wherein the low-k removal rate inhibitor is a nonionic surfactant. [7] The polishing composition according to [6], wherein the nonionic surfactant is selected from the group consisting of alcohol alkoxylates, alkylphenol alkoxylates, tristyrylphenol alkoxylates, sorbitan ester alkoxylates, polyalkoxylates, polyalkylene oxide block copolymers, tetrahydroxy oligomers, alkoxylated diamines, and mixtures thereof. [8] The polishing composition according to [1], wherein the low-k removal rate inhibitor is in an amount of about 0.0005% by weight to about 5% by weight of the composition. [9] The polishing composition according to [1], wherein the azole-containing corrosion inhibitor is selected from the group consisting of triazole, 1,2,4-triazole, tetrazole, benzotriazole, tolyltriazole, ethylbenzotriazole, propylbenzotriazole, butylbenzotriazole, pentylbenzotriazole, hexylbenzotriazole, dimethylbenzotriazole, chlorobenzotriazole, dichlorobenzotriazole, chloromethylbenzotriazole, chloroethylbenzotriazole, phenylbenzotriazole, benzylbenzotriazole, aminotriazole, aminobenzimidazole, pyrazole, imidazole, aminotetrazole, and mixtures thereof.

[10] The polishing composition according to [1], wherein the azole-containing corrosion inhibitor is present in an amount of about 0.0001% by weight to about 1% by weight of the composition.

[11] The polishing composition according to [1], wherein the pH adjuster is selected from the group consisting of ammonium hydroxide, sodium hydroxide, potassium hydroxide, cesium hydroxide, monoethanolamine, diethanolamine, triethanolamine, methylethanolamine, methyldiethanolamine, tetrabutylammonium hydroxide, tetrapropylammonium hydroxide, tetraethylammonium hydroxide, tetramethylammonium hydroxide, ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide, dimethyldipropylammonium hydroxide, benzyltrimethylammonium hydroxide, tris(2-hydroxyethyl)methylammonium hydroxide, choline hydroxide, and any combination thereof.

[12] The polishing composition according to [1], wherein the pH adjuster is present in an amount of about 0.01% by weight to about 10% by weight of the composition.

[13] The polishing composition according to [1], wherein the hard mask removal rate enhancing agent is selected from the group consisting of potassium hexacyanoferrate(II), potassium hexacyanoferrate(III), ammonium ferrous sulfate, ferrous nitrate, sodium ethylenediaminetetraacetate (III), ferrous bromide, ferrous bromide, ferrous chloride, ferrous chloride, ferrous citrate, ferrous fluoride, ferrous fluoride, ferrous oxalate, ferrous perchlorate, ferrous phosphate, ferrous sulfate, potassium thiocyanate, thiourea, potassium tetrafluorosilicate, potassium hexafluorophosphate, potassium tetrafluoroborate, hydrofluoric acid, a fluoride salt, a chlorine acid, a chloride salt, and a mixture thereof.

[14] The polishing composition according to [1], wherein the hardmask removal rate increasing agent is in an amount of about 0.0001% by weight to about 5% by weight of the composition.

[15] The polishing composition according to [1], further comprising a chelating agent selected from the group consisting of ethylenediaminetetraacetic acid, iminodiacetic acid, N-hydroxyethyl-ethylenediaminetriacetic acid, nitrilotriacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, triethylenetetraaminehexaacetic acid, diaminocyclohexanetetraacetic acid, nitrilotrimethylphosphonic acid, ethylenediaminetetra(methylenephosphonic acid), 1-hydroxyethylidene-1,1-diphosphonic acid, diethylenetriaminepenta(methylenephosphonic acid), and combinations thereof.

[16] The polishing composition according to

[15] , wherein the chelating agent is in an amount of about 0.001% by weight to about 1% by weight of the composition.

[17] The polishing composition according to [1], further comprising an oxidizing agent selected from the group consisting of hydrogen peroxide, orthoperiodic acid, metaperiodic acid, dimesoperiodic acid, diorthoperiodic acid, ammonium periodate, potassium periodate, sodium periodate, ammonium persulfate, iodic acid, iodate salts, perchloric acid, perchlorate salts, hydroxylamine and hydroxylamine salts, and any combination thereof.

[18] The composition, the abrasive in an amount of about 0.1% to about 50% by weight of the composition; the pH adjuster in an amount of about 0.01% to about 10% by weight of the composition; the barrier film removal rate enhancing agent in an amount of about 0.002% to about 4% by weight of the composition; the low-k removal rate inhibitor in an amount of about 0.0005% to about 5% by weight of the composition; the azole-containing corrosion inhibitor in an amount of about 0.0001% to about 1% by weight of the composition; and the hardmask removal rate enhancing agent in an amount of about 0.0001% to about 5% by weight of the composition; The polishing composition according to [1],

[19] The polishing composition according to [1], wherein the pH of the composition is about 7 to about 14.

[20] Abrasives; pH adjuster; Organic acids or their salts; Non-ionic surfactants; Azole-containing corrosion inhibitors; and Iron-containing salts 1. A polishing composition comprising:

[21] applying the polishing composition of [1] to a surface of a substrate, wherein the surface contains ruthenium or a hard mask material; and contacting a pad with the surface of the substrate and moving the pad relative to the substrate; 16. A method for polishing a substrate, comprising:

Claims

1. Abrasives; pH adjuster; Barrier film removal rate increasing agent; low-k removal rate inhibitors; An azole-containing corrosion inhibitor; and a hardmask removal rate enhancing agent selected from the group consisting of potassium hexacyanoferrate(II), potassium hexacyanoferrate(III), ammonium ferrous sulfate, ferrous nitrate, sodium ferrous ethylenediaminetetraacetate (III), ferrous bromide, ferrous bromide, ferrous chloride, ferrous chloride, ferrous citrate, ferrous fluoride, ferrous fluoride, ferrous oxalate, ferrous perchlorate, ferrous phosphate, ferrous sulfate, potassium thiocyanate, thiourea, potassium tetrafluorosilicate, potassium hexafluorophosphate, potassium tetrafluoroborate, hydrofluoric acid, fluoride salts, chlorine acid, chloride salts, and mixtures thereof; 1. A polishing composition comprising:

2. 2. The polishing composition of claim 1, wherein the abrasive is selected from the group consisting of alumina; silica; titania; ceria; zirconia; a co-formed product of alumina, silica, titania, ceria, or zirconia; coated abrasives; surface-modified abrasives; and mixtures thereof.

3. 10. The polishing composition of claim 1, wherein the abrasive is in an amount of 0.1% to 50% by weight of the polishing composition.

4. 2. The polishing composition of claim 1, wherein the barrier film removal rate increasing agent is an organic acid or a salt thereof selected from the group consisting of gluconic acid, lactic acid, citric acid, tartaric acid, malic acid, glycolic acid, malonic acid, formic acid, oxalic acid, acetic acid, propionic acid, peracetic acid, succinic acid, potassium acetate, potassium citrate, aminoacetic acid, phenoxyacetic acid, bicine, diglycolic acid, glyceric acid, tricine, alanine, histidine, valine, phenylalanine, proline, glutamine, aspartic acid, glutamic acid, arginine, lysine, tyrosine, benzoic acid, salts thereof, and mixtures thereof.

5. 2. The polishing composition of claim 1, wherein the barrier film removal rate enhancing agent is in an amount of 0.002% to 4% by weight of the polishing composition.

6. 2. The polishing composition of claim 1, wherein the low-k removal rate inhibitor is a non-ionic surfactant.

7. 7. The polishing composition of claim 6, wherein the nonionic surfactant is selected from the group consisting of alcohol alkoxylates, alkylphenol alkoxylates, tristyrylphenol alkoxylates, sorbitan ester alkoxylates, polyalkoxylates, polyalkylene oxide block copolymers, tetrahydroxy oligomers, alkoxylated diamines, and mixtures thereof.

8. 10. The polishing composition of claim 1, wherein the low-k removal rate inhibitor is in an amount of 0.0005% to 5% by weight of the polishing composition.

9. 2. The polishing composition of claim 1, wherein the azole-containing corrosion inhibitor is selected from the group consisting of triazole, 1,2,4-triazole, tetrazole, benzotriazole, tolyltriazole, ethylbenzotriazole, propylbenzotriazole, butylbenzotriazole, pentylbenzotriazole, hexylbenzotriazole, dimethylbenzotriazole, chlorobenzotriazole, dichlorobenzotriazole, chloromethylbenzotriazole, chloroethylbenzotriazole, phenylbenzotriazole, benzylbenzotriazole, aminotriazole, aminobenzimidazole, pyrazole, imidazole, aminotetrazole, and mixtures thereof.

10. 2. The polishing composition of claim 1, wherein the azole-containing corrosion inhibitor is in an amount of 0.0001% to 1% by weight of the polishing composition.

11. 2. The polishing composition of claim 1, wherein the pH adjuster is selected from the group consisting of ammonium hydroxide, sodium hydroxide, potassium hydroxide, cesium hydroxide, monoethanolamine, diethanolamine, triethanolamine, methylethanolamine, methyldiethanolamine, tetrabutylammonium hydroxide, tetrapropylammonium hydroxide, tetraethylammonium hydroxide, tetramethylammonium hydroxide, ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide, dimethyldipropylammonium hydroxide, benzyltrimethylammonium hydroxide, tris(2-hydroxyethyl)methylammonium hydroxide, choline hydroxide, and any combination thereof.

12. 2. The polishing composition of claim 1, wherein the pH adjuster is in an amount of 0.01% to 10% by weight of the polishing composition.

13. 2. The polishing composition of claim 1, wherein the hardmask removal rate enhancing agent is in an amount of 0.0001% to 5% by weight of the polishing composition.

14. 2. The polishing composition of claim 1, further comprising a chelating agent selected from the group consisting of ethylenediaminetetraacetic acid, iminodiacetic acid, N-hydroxyethyl-ethylenediaminetriacetic acid, nitrilotriacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, triethylenetetraaminehexaacetic acid, diaminocyclohexanetetraacetic acid, nitrilotrimethylphosphonic acid, ethylenediaminetetra(methylenephosphonic acid), 1-hydroxylethylidene-1,1-diphosphonic acid, diethylenetriaminepenta(methylenephosphonic acid), and combinations thereof.

15. 15. The polishing composition of claim 14, wherein the chelating agent is in an amount of 0.001% to 1% by weight of the polishing composition.

16. 2. The polishing composition of claim 1, further comprising an oxidizing agent selected from the group consisting of hydrogen peroxide, orthoperiodic acid, metaperiodic acid, dimesoperiodic acid, diorthoperiodic acid, ammonium periodate, potassium periodate, sodium periodate, ammonium persulfate, iodic acid, iodate salts, perchloric acid, perchlorate salts, hydroxylamine and hydroxylamine salts, and any combination thereof.

17. The polishing composition comprises: the abrasive in an amount of 0.1% to 50% by weight of the polishing composition; the pH adjuster in an amount of 0.01 wt % to 10 wt % of the polishing composition; the barrier film removal rate enhancing agent in an amount of 0.002 wt % to 4 wt % of the polishing composition; the low-k removal rate inhibitor in an amount of 0.0005 wt % to 5 wt % of the polishing composition; the azole-containing corrosion inhibitor in an amount of 0.0001 wt % to 1 wt % of the polishing composition; and the hardmask removal rate enhancing agent in an amount of 0.0001% to 5% by weight of the polishing composition; The polishing composition of claim 1 , comprising:

18. 2. The polishing composition of claim 1, wherein the polishing composition has a pH of 7 to 14.

19. applying the polishing composition of any one of claims 1 to 18 to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and contacting a pad with the surface of the substrate and moving the pad relative to the substrate; 16. A method for polishing a substrate, comprising:

Images