Substrate processing apparatus

Abstract

To provide a substrate processing apparatus capable of improving temperature deviation.SOLUTION: A substrate processing apparatus is a substrate processing apparatus performing heat treatment on a plurality of substrates, and includes: a process chamber 100 forming a processing space in which a plurality of substrates 1 are disposed to be spaced apart from each other along a vertical direction and processed; a plurality of first heater units 200 disposed in parallel with each other in a first horizontal direction in the processing space to correspond to some of the plurality of substrates 1; a plurality of second heater units 300 disposed in parallel with each other in a second horizontal direction that intersects with the first direction in the processing space to correspond to remaining some of the plurality of substrates 1; and auxiliary heater parts 400 installed at positions adjacent to both side surfaces of a process chamber in the processing space so as to be parallel to the second heater units, respectively.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for performing heat treatment on a large number of substrates.

Background Art

[0002] Generally, a substrate processing apparatus is an apparatus that performs substrate processing such as vapor deposition, etching, and heat treatment on a substrate by using a process gas and an atmosphere at an appropriate temperature in a sealed processing space formed by a process chamber.

[0003] In particular, heat treatment is performed to improve thin film characteristics such as crystallization and phase change of a predetermined thin film deposited on a substrate such as a silicon wafer or glass for semiconductor, flat panel display, and solar cell manufacturing.

[0004] As a typical heat treatment process, for manufacturing a high-quality display such as AMOLED (Active Matrics Organic Light Emitting Diode), there is a process of forming LTPS (Low Temperature Polycrystalline Silicon) using polycrystalline silicon on a glass substrate or forming a flexible substrate by forming and curing polyimide on the substrate.

[0005] Further, the heat treatment process may include a process of crystallizing amorphous silicon deposited on a substrate with polysilicon when manufacturing a liquid crystal display or a thin film crystalline silicon solar cell.

[0006] A conventional substrate processing apparatus heats a substrate through a number of rod heaters provided in parallel with the process gas injection direction in the processing space for heat treatment of a number of substrates introduced in the vertical direction.

[0007] On the one hand, in recent years, with the increase in the size of the substrate, the flow rate of the process gas to be injected has also increased significantly, and there has been a problem that the temperature deviation has become serious. In particular, there has been a problem that the temperature uniformity on the lowermost side where the process gas at a relatively low temperature descends is low.

[0008] More specifically, in the lowermost part of the processing space, since the process gas at a relatively low temperature descends adjacent to the inner wall side, a large amount of heat loss occurs, and temperature compensation is not appropriately performed compared to the upper part where temperature compensation is appropriately performed through the rising hot air flow, resulting in a serious problem of deepening temperature deviation by position.

[0009] In particular, on the lowermost side of the processing space, since a temperature deviation occurs in the process gas injection direction in which a rod heater having a length is provided, control for each position with respect to the gas flow direction of the process gas, that is, the longitudinal direction of the rod heater is required. However, there has been a problem that control for each position with respect to the longitudinal direction of the same rod heater cannot be performed and the temperature uniformity cannot be improved.

[0010] That is, as shown in FIG. 1, in the conventional substrate processing apparatus, a process gas flow is formed in the same direction as the longitudinal direction of the rod heater provided in the chamber 10. Here, the flow of the process gas due to the vertical temperature difference is added, and a temperature deviation for each position in the longitudinal direction of the rod heater occurs. However, there has been a problem that temperature control for each longitudinal direction of the rod heater cannot be performed and the temperature deviation deepens. Summary of the Invention Problems to be Solved by the Invention

[0011] An object of the present invention is to provide a substrate processing apparatus capable of improving temperature deviation in order to solve the above problems. Means for Solving the Problems

[0012] The present invention was devised to achieve the object of the present invention as described above. The present invention includes a process chamber in which a plurality of substrates are arranged at intervals along the vertical direction to form a processing space to be processed, a first heater unit arranged in parallel with each other in a horizontal first direction in the processing space corresponding to a part of the plurality of substrates, and a second heater unit arranged in parallel with each other in a horizontal second direction intersecting the first direction in the processing space corresponding to the remaining part of the plurality of substrates.

[0013] The second heater unit may be arranged below the first heater unit.

[0014] A plurality of the first heater units may be arranged corresponding to each of a part of the substrates arranged in the vertical direction.

[0015] The second heater unit may be arranged below the substrates located at the lowermost stage of the plurality of substrates.

[0016] The first direction and the second direction may be perpendicular to each other.

[0017] The second heater units may be arranged at equal intervals from each other in the first direction.

[0018] The first heater unit may be provided across both side surfaces of the process chamber.

[0019] The second heater unit may be provided across the front and rear surfaces of the process chamber.

[0020] It may include a heater support member provided on the bottom surface of the process chamber to support the second heater unit.

[0021] One end of the second heater unit may be provided penetrating the rear surface of the process chamber, and the other end may be provided separated from the front surface.

[0022] The process chamber has an opening formed in the front surface for introducing the substrate, and one end of the second heater unit may be provided to penetrate the rear surface of the process chamber, and the other end may be provided to penetrate the lower side of the opening among the front surfaces of the process chamber.

[0023] It may further include auxiliary heater units respectively provided so as to be parallel to the second heater unit at positions adjacent to both side surfaces of the process chamber in the processing space.

[0024] The second heater unit may be disposed between the auxiliary heater units disposed on both inner side surfaces of the process chamber.

[0025] A first distance between the auxiliary heater unit and the second heater unit may be larger than a second distance between the second heater units.

[0026] It may include a gas supply unit provided on one side wall of the process chamber for injecting process gas in the first direction, and a gas exhaust unit provided on the other side wall of the process chamber for exhausting the process gas in the processing space.

[0027] It includes a control unit for independently controlling the calorific value of each of the plurality of second heater units, and the control unit can control the calorific value of at least a part of the plurality of second heater units to be different from each other with respect to the rest.

[0028] The plurality of second heater units can sequentially form a first control group, a second control group, a third control group, and a fourth control group that are independently controlled via the control unit from one side wall side to the other side wall side of the process chamber.

[0029] The control unit can control the calorific value of the second control group to be larger than the calorific value of the first control group.

[0030] The control unit can control the calorific value of the fourth control group to be larger than the calorific value of the first control group.

[0031] The control unit can control the heat generation amounts of the second control group and the fourth control group to be larger than those of the first control group and the third control group.

Advantages of the Invention

[0032] The substrate processing apparatus according to the present invention has an advantage that it can improve the temperature deviation on the lowermost side in the processing space.

[0033] In particular, the substrate processing apparatus according to the present invention has an advantage that temperature control can be performed for each position in the process gas injection direction on the lowermost side in the processing space, and the temperature uniformity can be improved.

[0034] Also, the substrate processing apparatus according to the present invention has an advantage that the heater can be freely set in the process gas injection direction and the direction perpendicular thereto according to the temperature distribution with respect to the lowermost side in the processing space.

Brief Description of the Drawings

[0035]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8A - 8B

Embodiments for Carrying Out the Invention

[0036] Hereinafter, a substrate processing apparatus according to the present invention will be described with reference to the accompanying drawings as follows.

[0037] As shown in FIG. 2, a substrate processing apparatus according to the present invention includes a process chamber 100 in which a plurality of substrates 1 are arranged at intervals along the vertical direction to form a processing space to be processed, a first heater unit 200 arranged in parallel with each other in a horizontal first direction in the processing space corresponding to a part of the plurality of substrates 1, and a second heater unit 300 arranged in parallel with each other in a horizontal second direction intersecting the first direction below the first heater unit 200 in the processing space corresponding to the remaining part of the plurality of substrates 1.

[0038] The substrate processing apparatus according to the present invention further includes a substrate support unit that supports a plurality of substrates 1 arranged at intervals along the vertical direction in the processing space.

[0039] Furthermore, the substrate processing apparatus according to the present invention further includes auxiliary heater units 400 provided on both sides of the process chamber 100 in the processing space adjacent to the second heater unit 300 and parallel to it.

[0040] The substrate processing apparatus according to the present invention further includes a gas supply unit 500 provided on one side wall of the process chamber 100 for injecting process gas in the first direction and a gas exhaust unit 600 provided on the other side wall of the process chamber 100 for exhausting the process gas in the processing space.

[0041] Furthermore, the substrate processing apparatus according to the present invention further includes a heater support member 700 provided on the bottom surface of the process chamber 100 for supporting the second heater unit 300.

[0042] In addition, the substrate processing apparatus according to the present invention includes a control unit that independently controls the calorific value of each of a plurality of second heater units 300.

[0043] Here, the process gas according to the present invention is a general term for gases used in the heat treatment process for substrate processing. More specifically, it can also refer to various fumes that may be generated during the process and purge gases for discharging organic substances produced through the fumes.

[0044] The substrate 1 to be processed according to the present invention can be understood to include all substrates such as substrates used for display devices such as LEDs and LCDs, semiconductor substrates, and solar cell substrates. In particular, it can mean a flexible substrate used for flexible display devices.

[0045] On the other hand, the substrate processing step of the substrate processing apparatus according to the present invention can be understood to include a deposition step, an etching step, a heat treatment step, etc. In particular, it can include a series of steps such as forming a flexible substrate on a non-flexible substrate, forming a pattern on a flexible substrate, separating a flexible substrate, and a step of heat-treating and drying a flexible substrate.

[0046] On the other hand, for the sake of convenience of explanation, in FIG. 1, the substrate 1 is illustrated as if a single substrate is provided on a plurality of substrate support parts. However, more preferably, a plurality of substrates 1 may be loaded and processed corresponding to the plurality of substrate support parts.

[0047] The process chamber 100 may be configured to form a processing space in which a plurality of substrates 1 are processed.

[0048] For example, the process chamber 100 may include a substantially hexahedral chamber body 110 that forms a sealed processing space inside, and a reinforcing rib 120 provided on the outer surface of the chamber body 110 to reinforce the chamber body 110.

[0049] The chamber body 110 can be fabricated from at least one of quartz, stainless steel, aluminum, graphite, silicon carbide, or aluminum oxide.

[0050] On the other hand, the chamber body 110 is a hexahedron, an opening 101 for loading and unloading the substrate 1 is formed on the front surface, side walls facing each other are formed on the side surface adjacent to the opening 101, and a back surface may be formed on the opposing surface of the entrance and exit.

[0051] Also, as shown in FIG. 4, the chamber body 110 can form a back opening 102 on the back surface for access necessary for maintenance of the processing space. At this time, the back opening 102 can be opened and closed via another door.

[0052] Therefore, the side walls and side surfaces referred to in this specification mean the surfaces facing each other adjacent to the front surface where the opening 101 is formed, and the front surface and the back surface respectively mean the surfaces where the opening 101 and the back opening 102 are formed.

[0053] On the other hand, the process chamber 100 is provided with an opening and closing door (not shown) for opening and closing the opening 101. The opening and closing door is slidably provided in the front outside of the front surface where the opening 101 is formed in the front-rear, left-right, or up-down direction, and can open and close the entrance and exit.

[0054] Also, a plurality of through holes are formed in the side walls of the chamber body 110, a part of the configurations of the gas supply unit 500 and the gas exhaust unit 600 described later is provided, and further, the first heater unit 200 can penetrate and be provided inside the processing space.

[0055] On the other hand, it goes without saying that the through holes can also be partially formed on the front and back surfaces of the process chamber 100 for installation of the second heater unit 300 and the auxiliary heater unit 400 described later.

[0056] At this time, sealing means for preventing leakage of the substrate processing gas and forming the processing space into a sealed space may be further provided around the through hole.

[0057] The reinforcing rib 120 may be provided on the outer surface of the chamber body 110 and configured to reinforce the chamber body 110.

[0058] For example, the reinforcing rib 120 is provided on the outer surface of the chamber body 110, more specifically, on the outer sides of the upper and lower surfaces and the side walls, in preparation for the possibility that the chamber body 110 may be damaged or deformed under the influence of strong pressure or high temperature inside during the process, and the durability can be improved.

[0059] The substrate support portion may be arranged in the processing space and configured to support a plurality of substrates 1 so as to be spaced apart from each other along the vertical direction.

[0060] In particular, the substrate support portion can be provided in the processing space so as to support the substrates 1 at regular intervals in the vertical direction in order to support a plurality of substrates 1 so as to be spaced apart from each other along the vertical direction.

[0061] The gas supply unit 500 is provided on one side wall of the process chamber 100 and configured to inject the process gas in the first direction, and various configurations are possible.

[0062] At this time, the gas supply unit 500 can include a plurality of injection nozzles so that the process gas can be injected respectively corresponding to the substrates 1 spaced apart from each other in the vertical direction in the processing space.

[0063] Further, the injection nozzles may be provided through one side wall of the process chamber 100, and a plurality of them can be arranged at regular intervals and on the same horizontal plane.

[0064] The gas exhaust unit 600 is provided on the other side wall of the process chamber 100 and configured to exhaust the process gas in the processing space, and various configurations are possible.

[0065] At this time, the gas exhaust unit 600 may include exhaust ports respectively facing the injection nozzles of the gas supply unit 500 corresponding to the substrates 1 spaced apart from each other in the vertical direction in the processing space.

[0066] Further, the exhaust ports may be provided penetrating the other side wall of the process chamber 100 or formed as through holes formed in the process chamber 100, and a plurality of them may be arranged at regular intervals and a plurality of them may be arranged on the same horizontal plane.

[0067] On the other hand, regarding the first direction and the second direction described below and the installation directions of the respective components, it is as follows.

[0068] The first direction is the direction in which the first heater unit 200 is provided, means the longitudinal direction of the first heater unit 200, and means the X-axis direction on the drawing.

[0069] Further, the second direction is a direction intersecting the first direction, is the longitudinal direction of the second heater unit 300 where the second heater unit 300 is provided, and means the Y-axis direction on the drawing.

[0070] For example, both the first direction and the second direction may mean the horizontal direction, and the first direction and the second direction may be perpendicular to each other.

[0071] That is, the first direction is the direction in which the gas supply unit 500 of the process chamber 100 is provided and the process gas is injected, and may be the direction from one side wall side to the other side wall side of the process chamber 100, and the second direction is the direction perpendicular to the same plane in the process gas injection and air flow direction in the processing space, and means the direction from the front side to the back side of the process chamber 100.

[0072] The first heater unit 200 is configured such that a plurality of them are arranged in parallel with each other in the horizontal first direction in the processing space corresponding to a part of the plurality of substrates 1, and various configurations are possible.

[0073] At this time, the first heater unit 200 is a rod heater. For example, it may be configured to generate heat by winding a heating wire around a heater tube having a length, and all the heater shapes having a length disclosed in the past are applicable.

[0074] On the other hand, as shown in FIGS. 3 and 5, a plurality of the first heater units 200 can be arranged in parallel with each other on a virtual same horizontal plane corresponding to the substrate 1, and a plurality of them can be arranged respectively corresponding to a part of the substrate 1 arranged in the vertical direction.

[0075] The first heater units 200 may be arranged in parallel with each other, and the intervals between the adjacent first heater units 200 on the same horizontal plane may be the same.

[0076] Further, the first heater unit 200 may be provided across both side surfaces of the process chamber 100. More specifically, as the above-described process gas injection direction, it can be provided to have a length in the direction from one side wall of the process chamber 100 where the gas supply unit 500 is provided to the other side wall of the process chamber 100 where the gas exhaust unit 600 is provided.

[0077] At this time, the second heater unit 300 is a rod heater similar to the above-described first heater unit 200. For example, it may be configured to generate heat by winding a heating wire around a heater tube having a length, and all the heater shapes having a length disclosed in the past are applicable.

[0078] The second heater unit 300 may be configured such that a plurality of them are arranged in parallel with each other in a horizontal second direction intersecting the first direction below the first heater unit 200 in the processing space corresponding to the remaining part of the plurality of substrates 1.

[0079] At this time, the second heater unit 300 can be arranged below the first heater unit 200. In particular, a plurality of them can be arranged on a single virtual horizontal plane below the substrate 1 located at the lowermost stage of the plurality of substrates 1.

[0080] Further, the second heater units 300 may be arranged at equal intervals in the first direction, and more specifically, the intervals between adjacent second heater units 300 may all be the same.

[0081] On the other hand, as another example, it goes without saying that the intervals between the second heater units 300 may be different from each other depending on the position in the processing space.

[0082] The second heater units 300 may be provided across the front and back surfaces of the process chamber 100, and may be provided to have a length in a second direction perpendicular to the aforementioned first direction.

[0083] At this time, one end of the second heater unit 300 may be provided to penetrate the back surface of the process chamber 100, and the other end may be provided to penetrate the front surface of the process chamber 100.

[0084] In this case, one end of the second heater unit 300 can penetrate through the lower part of the back surface opening 102 formed on the back surface of the process chamber 100 and be installed through it without interference with the back surface opening 102, and the other end can be provided by penetrating through the lower part of the opening 101 on the front surface of the process chamber 100, so that it can be installed through without interference with the opening 101.

[0085] On the other hand, as another example, the second heater unit 300 may be arranged such that the other end is located at a position interfering with the opening 101, and one end may be arranged to be separated from the inner surface on the front side while penetrating through the back surface of the process chamber 100.

[0086] Also, as another example, the substrate processing apparatus according to the present invention, as shown in FIG. 3, includes a heater support member 700 provided on the bottom surface of the process chamber 100 and supporting the second heater unit 300, and the second heater unit 300 can also be supported via the heater support member 700.

[0087] At this time, a plurality of heater support members 700 are provided along the longitudinal direction of the second heater unit 300 and can support the second heater unit 300. As another example, one end of the second heater unit 300 is provided to penetrate the back surface of the process chamber 100, and a heater support member 700 is provided on the other end side, which can also support the second heater unit 300.

[0088] On the other hand, a placement groove corresponding to the second heater unit 300 is formed on the upper surface of the heater support member 700, and the second heater unit 300 can be supported.

[0089] Also, the second heater unit 300 is arranged between auxiliary heater units 400 described later. More specifically, it can be arranged between the auxiliary heater units 400 provided with a length in the second direction at positions adjacent to both inner side surfaces of the process chamber 100.

[0090] At this time, the first distance d1 between the auxiliary heater unit 400 and the second heater unit 300 can be arranged to be larger than the second distance d2 between the second heater units 300.

[0091] As shown in FIG. 3, the auxiliary heater units 400 are each provided in a configuration parallel to the second heater unit 300 at positions adjacent to both side surfaces of the process chamber 100 in the processing space, and various configurations are possible.

[0092] For example, a plurality of the auxiliary heater units 400 can be arranged in parallel with each other in the vertical direction at positions adjacent to both inner side surfaces of the process chamber 100, provided with a length in the second direction, and can perform temperature compensation for both side surfaces of the process chamber 100 with large heat loss.

[0093] That is, the auxiliary heater unit 400 can be provided to have a length in the second direction at adjacent positions for temperature compensation for both inner side surfaces of the process chamber 100, which is difficult to perform temperature compensation despite high heat loss by the first heater unit 200 provided with a length in the first direction.

[0094] The control unit is configured to independently control the calorific value of each of the plurality of second heater units 300, and various configurations are possible.

[0095] At this time, it goes without saying that the control unit can perform temperature control not only through the plurality of second heater units 300 but also through the calorific value of the first heater unit 200 and the auxiliary control unit 400.

[0096] The control unit can control at least some of the plurality of second heater units 300 to have different calorific values from the rest. For example, according to the position of the processing space of the plurality of second heater units 300, the calorific value can be set high for some and low for the rest.

[0097] For this purpose, the second heater unit 300 is the minimum unit whose calorific value is controlled via the control unit, and the first control group 310, the second control group 320, the third control group 330, and the fourth control group 340, which are independently controlled via the control unit, can be sequentially formed from one side wall side to the other side wall side of the process chamber 100.

[0098] To explain the control of the second heater unit 300 via the control unit, the temperature change at the lowermost part of the processing space is as follows.

[0099] As shown in FIGS. 1 and 8A, at the lowermost part of the processing space, that is, below the lowermost substrate 1, as the process gas at a relatively low temperature in the upper part descends while horizontally moving in the first direction, the temperature of the region corresponding to the first control group 310 into which the process gas just flows at that time is relatively high, and the temperature of the region corresponding to the second control group 320 may be relatively low.

[0100] Also, due to the temperature exchange of the process gas by the first heater unit 200 and the second heater unit 300, the temperature of the region corresponding to the third control group 330 can be formed higher than the temperature of the region corresponding to the second control group 320.

[0101] On one hand, since the heat loss of the process chamber 100 is large and the exhaust port is located, the temperature of the region corresponding to the fourth control group 340 adjacent to the other side wall can be formed lower than the temperature of the region corresponding to the third control group 330.

[0102] As a result, as shown in FIG. 8A, the temperatures of the regions corresponding to the first control group 310 and the third control group 330 are relatively high, the temperatures of the regions corresponding to the second control group 320 and the fourth control group 340 are relatively low, and temperature deviations for each position in the first direction can occur.

[0103] Therefore, the control unit can control the calorific value of the second control group 320 to be greater than the calorific value of the first control group 310. As another example, the control unit can control the calorific value of the fourth control group 340 to be greater than the calorific value of the first control group 310.

[0104] Furthermore, the control unit can also control the calorific values of the second control group 320 and the fourth control group 340 to be greater than the calorific values of the first control group 310 and the third control group 330.

[0105] On the other hand, as an example different from the above, the number of the second heater units 300 included in the second control group 320 and the fourth control group 340 is made larger than the number of the second heater units 300 included in the first control group 310 and the third control group 330, and it is also possible to induce the temperature of the region corresponding to the second control group 320 and the fourth control group 340 to be higher for the control of the same calorific value with the same power.

[0106] Thereby, it can be confirmed that, as shown in FIG. 8B, the substrate processing apparatus according to the present invention has the temperature deviation in the first direction improved as compared with FIG. 8A of the conventional substrate processing apparatus.

[0107] At this time, FIGS. 8A and 8B mean regions where the darker the display, the higher the temperature, and the brighter the display, the lower the temperature.

[0108] The above is only a description of some of the preferred embodiments that can be implemented by the present invention. As is well known, the scope of the present invention should not be construed as being limited to the above-described embodiments, and all of the technical ideas of the present invention described above and the technical ideas that form the basis thereof are included in the scope of the present invention.

Description of Reference Numerals

[0109] 100 process chamber 200 first heater section 300 second heater section 400 auxiliary heater section

Claims

1. A process chamber in which a plurality of substrates are arranged at intervals along the vertical direction to form a processing space to be processed; A first heater unit arranged in parallel with each other in a horizontal first direction in the processing space corresponding to a part of the plurality of substrates; A second heater unit arranged in parallel with each other in a horizontal second direction intersecting the first direction in the processing space corresponding to the remaining part of the plurality of substrates; A substrate processing apparatus, characterized by comprising the above.

2. The second heater unit: The substrate processing apparatus according to claim 1, characterized in that it is arranged below the first heater unit.

3. The first heater unit: The substrate processing apparatus according to claim 1, characterized in that a plurality of the first heater units are arranged corresponding to each of a part of the substrates arranged in the vertical direction.

4. The second heater unit: The substrate processing apparatus according to claim 1, characterized in that it is arranged below the substrates located at the lowermost stage of the plurality of substrates.

5. The substrate processing apparatus according to claim 1, characterized in that the first direction and the second direction are perpendicular to each other.

6. The second heater unit: The substrate processing apparatus according to claim 5, characterized in that the second heater units are arranged at equal intervals from each other in the first direction.

7. The first heater unit: The substrate processing apparatus according to claim 1, characterized in that it is provided across both side surfaces of the process chamber.

8. The second heater unit: The substrate processing apparatus according to claim 1, characterized in that it is provided across the front and back surfaces of the process chamber.

9. The substrate processing apparatus according to claim 1, characterized by including a heater support member provided on the bottom surface of the process chamber to support the second heater unit.

10. The second heater unit: The substrate processing apparatus according to claim 9, characterized in that one end is provided through the back surface of the process chamber, and the other end is provided separated from the front surface.

11. The process chamber has an opening formed in the front surface for introducing the substrate, The substrate processing apparatus according to claim 1, characterized in that one end of the second heater unit is provided through the back surface of the process chamber, and the other end is provided through the lower side of the opening in the front surface of the process chamber.

12. The substrate processing apparatus according to claim 1, further comprising auxiliary heater units respectively provided so as to be parallel to the second heater unit at positions adjacent to both side surfaces of the process chamber in the processing space.

13. The second heater unit is The substrate processing apparatus according to claim 12, wherein the second heater unit is disposed between the auxiliary heater units disposed on both inner side surfaces of the process chamber.

14. The substrate processing apparatus according to claim 12, wherein a first distance between the auxiliary heater unit and the second heater unit is greater than a second distance between the second heater units.

15. The substrate processing apparatus according to claim 1, comprising: a gas supply unit provided on one side wall of the process chamber for injecting a process gas in the first direction; and a gas exhaust unit provided on the other side wall of the process chamber for exhausting the process gas in the processing space.

16. including a control unit for independently controlling the calorific value of each of the plurality of second heater units, The substrate processing apparatus according to claim 15, wherein the control unit controls the calorific value of at least a part of the plurality of second heater units to be different from each other with respect to the rest.

17. The plurality of second heater units are The substrate processing apparatus according to claim 16, wherein a first control group, a second control group, a third control group, and a fourth control group that are independently controlled via the control unit are sequentially formed from one side wall side to the other side wall side of the process chamber.

18. The control unit is The substrate processing apparatus according to claim 17, wherein the control unit controls the calorific value of the second control group to be greater than the calorific value of the first control group.

19. The control unit is The substrate processing apparatus according to claim 17, wherein the control unit controls the calorific value of the fourth control group to be greater than the calorific value of the first control group.

20. The control unit is The substrate processing apparatus according to claim 17, wherein the control unit controls the calorific values of the second control group and the fourth control group to be greater than the calorific values of the first control group and the third control group.

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