Substrate Processing Apparatus and Substrate Processing Method

Abstract

Provided is a substrate treatment device for treating a substrate, the device having: a treatment chamber in which a treatment space for the substrate is formed; a heating mechanism which adjusts the internal temperature of the treatment chamber; and an internal member provided inside the treatment chamber, wherein the heating mechanism has an inductive heating body which heats at least the internal member by being heated by an induced magnetic field, and a magnetic field generation part which generates the induced magnetic field.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] Patent Document 1 discloses a processing apparatus for performing heat treatment on an object to be processed. The processing apparatus described in Patent Document 1 includes a processing container having an internal processing space for the object to be processed, and a container heating means for heating the side wall of the processing container to a hot wall state. The container heating means includes a rod-shaped cartridge heater embedded in the side wall of the processing container, and a heater power supply connected to the cartridge heater.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The technology according to the present disclosure provides a substrate processing apparatus capable of wirelessly adjusting the temperature of the inner wall surface of a processing space where substrate processing is performed.

Means for Solving the Problems

[0005] One aspect of the present disclosure is a substrate processing apparatus for processing a substrate, including a processing chamber in which a processing space for the substrate is formed, a heating mechanism for adjusting the internal temperature of the processing chamber, and provided inside the processing chamber , a shield member disposed apart from the inner wall surface of the processing chamber and defining at least a part of the side wall portion of the processing space and having, the heating mechanism includes an induction heating element that generates heat by an induction magnetic field to heat at least the Shield member and a magnetic field generation unit that generates the induction magnetic field. Disposed along the outer wall surface of the processing chamber

Effects of the Invention

[0006] According to the present disclosure, it is possible to provide a substrate processing apparatus capable of wirelessly adjusting the temperature of the inner wall surface of a processing space where substrate processing is performed.

Brief Description of the Drawings

[0007]

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Mode for Carrying Out the Invention

[0008] In the manufacturing process of semiconductor devices, by exciting the processing gas supplied into the chamber to generate plasma, various plasma processes such as etching, film formation, and diffusion processes are performed on a semiconductor substrate (hereinafter simply referred to as "substrate") supported by a substrate support.

[0009] In these plasma processes, for the purpose of uniformly controlling the atmospheric temperature of the processing space where the plasma process is performed and suppressing the adhesion of reaction products (hereinafter sometimes referred to as "depo") to the inner wall surface of the chamber, the temperature of the side wall body that defines the inner wall surface of the chamber may be adjusted. The temperature adjustment of such a side wall body is performed by, for example, a rod-shaped heater provided inside the side wall body as disclosed in Patent Document 1.

[0010] Here, since the side wall body of the chamber whose temperature is to be adjusted is a metal partition wall that separates the vacuum space inside the chamber and the atmospheric space outside the chamber, the heater power supply that supplies power to the heater provided inside the side wall body is mainly installed in the atmospheric space outside the chamber.

[0011] However, when the heater power supply is installed in the atmospheric space outside the chamber in this way, heat transfer from the atmospheric space to the vacuum space is required, so the energy efficiency decreases. In addition to heat dissipation to the atmospheric space and heat transfer to peripheral units (for example, a transfer system) from the side wall body of the chamber whose temperature is to be adjusted, since the heat capacity of the side wall body itself, which is a metal partition wall, is large, an enormous amount of time and energy are required to adjust the temperature to a desired temperature. Thus, in the conventional method for adjusting the temperature of the side wall body, there is room for improvement from the viewpoints that it is difficult to increase the temperature of the side wall body and the energy efficiency is low.

[0012] In addition, when adjusting the temperature of the side wall of the chamber by heating with a heater in this way, the heater, which is a heating element, and the heater power supply need to be electrically connected by a power supply cable or the like. However, when the heater and the heater power supply are connected using such a power supply cable, a part of the high frequency applied from the RF (Radio Frequency) power supply to the electrode for plasma generation may enter the power supply cable as common mode noise during plasma generation. In such a case, abnormal discharge or reverse flow of high frequency power may occur in the heater power supply system, making it impossible to properly execute plasma processing, or the power supply cable may cause contamination in the processing space.

[0013] The technology according to the present disclosure has been made in view of the above circumstances, and provides a substrate processing apparatus capable of wirelessly adjusting the temperature of the inner wall surface of the processing space where substrate processing is performed. Hereinafter, a plasma processing system as the substrate processing apparatus according to the present embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

[0014] <Plasma processing apparatus> First, the plasma processing system according to the present embodiment will be described. FIG. 1 is a longitudinal sectional view showing an outline of the configuration of the plasma processing system according to the present embodiment.

[0015] The plasma processing system includes an inductively coupled plasma processing apparatus 1 and a control unit 2. The plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, an exhaust system 40, and a heating mechanism 50. The plasma processing chamber 10 includes a dielectric window 101 and a shutter 60 that opens and closes the loading / unloading opening 60a of the substrate (wafer) W. In one embodiment, the dielectric window 101 is connected to the upper part of the side wall 10a of the plasma processing chamber 10 via an insulator ring 102 and constitutes at least a part of the ceiling of the plasma processing chamber 10. Further, the plasma processing apparatus 1 includes a substrate support 11, a gas introduction part, and an antenna 14. The substrate support 11 is disposed inside the plasma processing chamber 10. The antenna 14 is disposed above the plasma processing chamber 10 or above (i.e., above the dielectric window 101). The heating mechanism 50 includes a shield member 51 disposed inside the plasma processing chamber 10, for example, along the side wall 10a. Inside the plasma processing chamber 10, a plasma processing space 10s defined by the dielectric window 101, the shield member 51 of the heating mechanism 50, and the substrate support 11 is formed. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas discharge port for discharging gas from the plasma processing space 10s.

[0016] The substrate support 11 includes a main body member 111 and a ring assembly 112. The main body member 111 is fixed to the bottom surface of the plasma processing chamber 10 via a support member 113. The upper surface of the main body member 111 has a central region 111a (substrate support surface) for supporting the substrate W and an annular region 111b (ring support surface) for supporting the ring assembly 112. The annular region 111b surrounds the central region 111a in a plan view. The substrate W is disposed on the central region 111a, and the ring assembly 112 is disposed on the annular region 111b so as to surround the substrate W on the central region 111a.

[0017] In one embodiment, the main body member 111 includes a base (not shown) and an electrostatic chuck (not shown). The base includes a conductive member. The conductive member of the base functions as a lower electrode. The electrostatic chuck is disposed on the base. The upper surface of the electrostatic chuck has the above-described central region 111a and annular region 111b. The ring assembly 112 includes one or more annular members, and at least one of the one or more annular members is an edge ring.

[0018] Also, although not shown, the substrate support 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck, the ring assembly 112, and the substrate W to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path. Further, the substrate support 11 may include a heat transfer gas supply unit configured to supply a heat transfer gas between the back surface of the substrate W and the substrate support surface 111a.

[0019] The gas introduction unit is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. In one embodiment, the gas introduction unit includes a central gas injector (CGI) 13. The central gas injector 13 is disposed above the substrate support 11 and attached to a central opening formed in the dielectric window 101. The central gas injector 13 has at least one gas supply port 13a, at least one gas flow path 13b, and at least one gas introduction port 13c. The process gas supplied to the gas supply port 13a passes through the gas flow path 13b and is introduced into the plasma processing space 10s from the gas introduction port 13c. Note that the gas introduction unit may include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a in addition to or instead of the central gas injector 13.

[0020] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas from a corresponding gas source 21 to the central gas injection unit 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Further, the gas supply unit 20 may include one or more flow modulation devices that modulate or pulse the flow rate of at least one processing gas.

[0021] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the conductive member (lower electrode) of the substrate support 11 and / or the antenna 14. Thereby, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Accordingly, the RF power supply 31 can function as at least a part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10. Also, by supplying a bias RF signal to the lower electrode, a bias potential is generated on the substrate W, and the ion component in the formed plasma can be drawn into the substrate W.

[0022] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to the antenna 14 and is configured to generate a source RF signal (source RF power) for plasma generation via at least one impedance matching circuit. In one embodiment, the source RF signal has a frequency in the range of 13 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to the antenna 14.

[0023] The second RF generation unit 31b is coupled to the lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency within the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to the lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0024] Also, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a bias DC generation unit 32a. In one embodiment, the bias DC generation unit 32a is connected to the lower electrode and is configured to generate a bias DC signal. The generated bias DC signal is applied to the lower electrode. In one embodiment, the bias DC signal may be applied to other electrodes such as the electrodes in the electrostatic chuck. In various embodiments, the bias DC signal may be pulsed. Note that the bias DC generation unit 32a may be provided in addition to the RF power supply 31, or may be provided in place of the second RF generation unit 31b.

[0025] The antenna 14 includes one or more coils. In one embodiment, the antenna 14 may include an outer coil and an inner coil arranged coaxially. In this case, the RF power supply 31 may be connected to both the outer coil and the inner coil, or may be connected to either one of the outer coil and the inner coil. In the former case, the same RF generation unit may be connected to both the outer coil and the inner coil, or separate RF generation units may be separately connected to the outer coil and the inner coil.

[0026] The exhaust system 40 can be connected to, for example, a gas outlet 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The internal pressure of the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0027] Also, in one embodiment, the exhaust system 40 includes a baffle plate 41 disposed to partition between the plasma processing space 10s and the gas outlet 10e around the substrate support 11 in a plan view. The baffle plate 41 is an annular plate-like member having a plurality of through holes, through which the plasma processing space 10s and the gas outlet 10e communicate with each other, and captures or reflects the plasma generated in the plasma processing space 10s to suppress leakage to the gas outlet 10e. Further, the baffle plate 41 is arranged parallel to the substrate W placed on the substrate support 11 and is disposed at a position lower than the upper surface of the substrate W in the drawing.

[0028] FIG. 2 is a longitudinal sectional view schematically showing the configuration of the heating mechanism 50. As shown in FIG. 2, the heating mechanism 50 includes a shield member 51 disposed inside the plasma processing chamber 10 along the side wall 10a of the plasma processing chamber 10, a plurality of induction heating coils 52 disposed along the outer wall surface of the side wall 10a on the outer side (atmospheric space side) of the side wall 10a, and a plurality of magnetic bodies 53 disposed inside the shield member 51 corresponding to each of these induction heating coils 52.

[0029] The shield member 51 is made of, for example, a non-magnetic dielectric such as ceramic or a member with high thermal conductivity such as Al. The shield member 51 is arranged inside the plasma processing chamber 10 so as to cover the side wall 10a and functions as a substantial inner wall surface of the plasma processing space 10s. Further, the shield member 51 is arranged at a distance from the side wall 10a, and its ends (the upper end and the lower end in FIG. 2) are connected to the side wall 10a via a heat insulating sealing member 54. A space with a desired width surrounded by the side wall 10a, the shield member 51, and the sealing member 54 is configured to be maintainable, for example, in a vacuum atmosphere. In other words, the space between the shield member 51 and the side wall 10a is thermally separated by a vacuum heat insulating space 50s as a heat insulating layer and the sealing member 54.

[0030] Note that the shield member 51 is heated by the heat generation of the magnetic body 53 described later and is maintained in a hot wall state at a desired temperature. At this time, in order to reduce the amount of energy required to heat the shield member 51 to a desired temperature, it is desirable that the shield member 51 be formed as thin as possible with a thickness that allows the magnetic body 53 to be disposed inside. In other words, it is desirable to form the shield member 51, which is the object of temperature adjustment, thin to reduce the heat capacity.

[0031] A plurality of induction heating coils 52 as magnetic field generation units are provided along the outer wall surface of the side wall 10a of the plasma processing chamber 10. At least one inverter circuit 55 and at least one heating power source 56 are connected to the plurality of induction heating coils 52. The induction heating coil 52 is connected to the heating power source 56 via the inverter circuit 55. When electric power from the heating power source 56 is applied to the induction heating coil 52, an induction magnetic field M is generated as shown in FIG. 3.

[0032] The inverter circuit 55 controls the frequency of the power applied from the heating power source 56 to the induction heating coil 52. Specifically, for example, it converts the AC 50 / 60 Hz from the heating power source 56 into a high frequency of several tens of kHz or more (for example, 100 kHz to 2 MHz). As the heating power source 56, any AC (Alternating Current) power source, for example, a general commercial AC power source can be used. Note that the inverter circuit 55 and the heating power source 56 may be connected only one to the heating mechanism 50 as shown in FIG. 2, or a plurality of them may be provided for each temperature control region for adjusting the atmospheric temperature of the plasma processing space S, for example.

[0033] The magnetic body 53 as the induction heating element is composed of, for example, a magnetic metal material (for example, a material containing iron such as carbon steel, silicon iron, stainless steel, permalloy, ferrite, etc.), and is provided inside the shield member 51, thereby being integrally formed with the shield member 51. As shown in FIG. 3, an induced current I (eddy current) is induced on the surface of the magnetic body 53 by the induced magnetic field M generated from the induction heating coil 52. Then, the magnetic body 53 generates Joule heat according to the resistance value of the magnetic body 53 due to the induced current I. In addition, heat is generated due to the hysteresis loss (loss generated by the friction between Fe molecules) caused by the induced magnetic flux generated from the induction heating coil 52 in the magnetic body 53.

[0034] Note that the induction heating element does not have to be a magnetic metal material as long as it is a material that can obtain sufficient heat generation by Joule heating due to eddy current. For example, it may be aluminum, tungsten, tin, titanium, carbon, silicon, or silicon carbide.

[0035] In the heating mechanism 50, in order to appropriately heat the magnetic body 53 by the induced magnetic field M emitted from the induction heating coil 52, a core material made of a high magnetic permeability material may be provided in the induction heating coil 52 to strengthen the induced magnetic field M emitted from the induction heating coil 52.

[0036] Also, as shown in FIG. 4, in order to appropriately apply the induction magnetic field M emitted from the induction heating coil 52 to the magnetic body 53, the induction heating coil 52 and the magnetic body 53 are arranged such that at least a part of them overlaps in a front view. Desirably, as shown in FIG. 5, the entire surface of the induction heating coil 52 overlaps with the magnetic body 53. By arranging the induction heating coil 52 and the magnetic body 53 to overlap in this way, the induction magnetic field M emitted from the induction heating coil 52 can be appropriately applied to the magnetic body 53, and the magnetic body 53 can be heated. Further, by arranging the entire surface of the induction heating coil 52 to overlap with the magnetic body 53 as shown in FIG. 5, the induction magnetic field M emitted from the induction heating coil 52 at least toward the magnetic body 53 side can be utilized for induction heating without leakage.

[0037] In the plasma processing apparatus 1, for example, in order to improve the uniformity of the process characteristics with respect to the substrate W in plasma processing, as described above, it is required to uniformly control the ambient temperature of the plasma processing space 10s. However, in the plasma processing apparatus 1, for example, due to various conditions such as the geometric positional relationship of various members arranged in the plasma processing space 10s and the conditions of the processing process, the distribution of the ambient temperature in the plasma processing space 10s may be biased.

[0038] Therefore, a plurality of magnetic bodies 53 are provided inside the shield member 51 according to this embodiment, as described above. Specifically, as shown in FIG. 6, a plurality of magnetic bodies 53 are provided inside the shield member 51 at a desired interval from each other. Further, outside the plasma processing chamber 10, a plurality of induction heating coils 52 are provided corresponding one-to-one to these plurality of magnetic bodies 53. Then, when heating the shield member 51 (adjusting the ambient temperature of the plasma processing space 10s), by adjusting the frequency of the high-frequency power applied to each induction heating coil 52 (or for each temperature control region formed by a group of induction heating coils 52) provided corresponding to each of the magnetic bodies 53 by the inverter circuit 55, the distribution of the surface temperature of the shield member 51 (the ambient temperature of the plasma processing space 10s) can be appropriately adjusted.

[0039] From the perspective of appropriately adjusting the distribution of the ambient temperature in the plasma processing space 10s, a movable mechanism for approaching or separating a part of the magnetic field generation unit from the induction heating element may be further provided. Specifically, for example, as shown in FIG. 7, an actuator Ac may be connected to the center of the induction heating coil 52.

[0040] The induction heating coil 52 is covered with an insulating film Fm such as a polyimide film, and the actuator Ac and the induction heating coil 52 are insulated from each other. The actuator Ac may be made of an insulator such as quartz and insulated from the induction heating coil 52. The tip of the actuator Ac is adhered to the insulating film Fm, and by driving the actuator Ac, a part of the induction heating coil 52 (the center part in the example shown in FIG. 8) approaches or separates from the induction heating element (magnetic body 53). When a part (center part) of the induction heating coil 52 approaches the magnetic body 53, the proximity part (center part) of this magnetic body 53 is heated more strongly than the separated part (end part) of the magnetic body 53. On the other hand, when a part (center part) of the induction heating coil 52 separates from the magnetic body 53, the separated part (center part) of the magnetic body 53 is heated less strongly than the proximity part (end part) of the magnetic body 53.

[0041] Therefore, by providing a movable mechanism for approaching or separating a part of the magnetic field generation unit from the induction heating element, the temperature distribution of the induction heating element (magnetic body 53 in the examples shown in FIGS. 7 and 8) can be controlled. As shown in FIG. 6, when a plurality of magnetic field generation units are provided, a movable mechanism may be provided for each of all the magnetic field generation units, or a movable mechanism may be provided only for some of the magnetic field generation units. Furthermore, a movable mechanism may be provided for each temperature control region formed by a group of magnetic field generation units, or only for a part of the temperature control region formed by a group of magnetic field generation units.

[0042] Thus, in the heating mechanism 50 provided in the plasma processing apparatus 1 according to this embodiment, instead of directly heating the side wall 10a of the plasma processing chamber 10, the shield member 51 disposed inside the side wall 10a is heated. At this time, the shield member 51 is arranged so as to be thermally insulated from the side wall 10a and is formed with a small thickness so as to have a small heat capacity. Therefore, the amount of energy required to form and maintain a hot wall state during plasma processing can be significantly reduced as compared with the conventional case.

[0043] In addition, since the temperature of the shield member 51 forming the inner wall of the plasma processing space 10s can be easily adjusted in this way, the adhesion state of dissociation deposits and reaction products (hereinafter, these are collectively referred to as "deposits") from the processing gas during plasma processing to the shield member 51 can be easily controlled. That is, for example, by maintaining the temperature of the shield member 51 at a high temperature, the adhesion of deposits to the shield member 51 can be appropriately suppressed.

[0044] Also, in this embodiment, the magnetic body 53 provided inside the shield member 51 can be wirelessly inductively heated using the induction magnetic field M emitted from the induction heating coil 52 without being electrically connected to the induction heating coil 52 provided outside the plasma processing chamber 10. That is, the power supply cable that connected the heating element and the power supply in the temperature adjustment means of the conventional plasma processing chamber can be reduced.

[0045] As described above, the bias RF signal supplied from the RF power source 31 to the lower electrode during plasma processing may conventionally enter as common mode noise into the power supply cable connecting the heating element (e.g., heater, etc.) and the power source for the heater. In this regard, in the present embodiment, since the power supply cable connecting the induction heating coil 52 and the magnetic body 53 can be omitted as described above, noise components do not enter the heating power supply system through the power supply cable as in the prior art. In particular, in the present embodiment, since the induction heating coil 52 and the heating power source 56 for generating the induction magnetic field M are provided outside the plasma processing chamber 10, entry of noise components into the heating power supply system is further appropriately suppressed.

[0046] Further, in the present embodiment, since there is no need to connect a power supply cable to the magnetic body 53 in this way, in other words, since there is no need to dispose a power supply cable in the vacuum space, the power supply cable does not cause contamination either.

[0047] Return to the description of FIG. 1. The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to execute various processes described in the present disclosure. The control unit 2 can be configured to control each element of the plasma processing apparatus 1 to execute the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 can be configured to perform various control operations based on programs stored in the storage unit 2a2. The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0048] Although various exemplary embodiments have been described above, various additions, omissions, substitutions, and changes may be made without being limited to the exemplary embodiments described above. Also, it is possible to form other embodiments by combining elements in different embodiments.

[0049] For example, in this embodiment, the case where the plasma processing system has an inductively coupled plasma (ICP) plasma processing apparatus 1 has been described as an example, but the configuration of the plasma processing system is not limited to this. For example, the plasma processing system may have a processing apparatus including a plasma generation unit such as capacitively coupled plasma (CCP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Further, a processing apparatus including various types of plasma generation units including an alternating current (AC) plasma generation unit and a direct current (DC) plasma generation unit may be used.

[0050] <Method for processing a substrate by a plasma processing apparatus> Next, an example of a method for processing the substrate W in the plasma processing apparatus 1 configured as described above will be described. In the plasma processing apparatus 1, any plasma processing such as etching processing, film formation processing, diffusion processing, etc. is performed on the substrate W according to the purpose.

[0051] First, the shutter 60 is opened and the substrate W is carried into the plasma processing chamber 10, and the substrate W is placed on the electrostatic chuck of the substrate support 11. When the substrate W is placed on the electrostatic chuck, the shutter 60 is closed and the inside of the plasma processing chamber 10 is sealed. Next, a voltage is applied to the adsorption electrode of the electrostatic chuck, whereby the substrate W is adsorbed and held by the electrostatic chuck by electrostatic force.

[0052] When the substrate W is adsorbed and held by the electrostatic chuck, next, the inside of the plasma processing chamber 10 is depressurized to a predetermined degree of vacuum. Next, a processing gas is supplied from the gas supply unit 20 to the plasma processing space 10s through the central gas injection unit 13. Further, source RF power for plasma generation is supplied from the first RF generation unit 31a to the antenna 14, whereby the processing gas is excited to generate plasma. At this time, bias RF power may be supplied from the second RF generation unit 31b to the lower electrode. Then, in the plasma processing space 10s, the target plasma processing is performed on the substrate W by the action of the generated plasma.

[0053] When performing plasma processing on the substrate W, the ambient temperature of the plasma processing space 10s is adjusted by the operation of the heating mechanism 50 provided inside the shield member 51. Specifically, an induction magnetic field M is generated by applying high-frequency power from the heating power supply 56 to the induction heating coil 52, whereby, for example, an induced current I (eddy current) is induced on the surface of the magnetic body 53 to inductively heat the magnetic body 53, and the surface temperature of the shield member 51 forming the inner wall surface of the plasma processing space 10s is adjusted.

[0054] Note that the surface temperature of the shield member 51 may be controlled to be constant in a series of plasma processing performed in the plasma processing apparatus 1, or may be controlled to be appropriately changed according to the processing steps.

[0055] Specifically, for example, when there is a bias in the ambient temperature of the plasma processing space 10s, temperature control may be performed independently for each induction heating coil 52 (or for each of the above-described temperature control regions) so as to eliminate such a bias in the ambient temperature and make the temperature of the plasma processing space 10s uniform overall. For example, in a series of plasma processes in the plasma processing apparatus 1, the surface temperature of the shield member 51 is increased in a process step with a large deposition amount, and the temperature of the shield member 51 is decreased (lower than the surface temperature in the process step with a large deposition amount) in a process step with a small deposition amount. Temperature control may be performed accordingly. The surface temperature of the shield member 51 can be controlled, for example, by adjusting the frequency of the current supplied to the induction heating coil 52 by the inverter circuit 55.

[0056] Note that the adjustment of the surface temperature of the shield member 51 may be started after the plasma processing is started in the plasma processing apparatus 1 in this manner, or may be started before the plasma processing is started.

[0057] When the plasma processing is completed, the supply of the source RF power from the first RF generation unit 31a and the supply of the processing gas from the gas supply unit 20 are stopped. When bias RF power has been supplied during the plasma processing, the supply of the bias RF power is also stopped.

[0058] Next, the temperature adjustment of the shield member 51 by the heating mechanism 50 and the adsorption and holding of the substrate W by the electrostatic chuck are stopped, and the substrate W after the plasma processing and the electrostatic chuck are discharged. Then, the substrate W is detached from the electrostatic chuck, and the substrate W is carried out of the plasma processing apparatus 1. Thus, a series of plasma processes are completed.

[0059] <The functions and effects of the substrate support according to the present disclosure> As described above, according to the plasma processing apparatus 1 according to the present embodiment, the shield member 51 forming the inner wall surface of the plasma processing space 10s is provided inside the plasma processing chamber 10, and the shield member 51 is heated by the heating mechanism 50 to control the ambient temperature of the plasma processing space 10s. Thereby, since it is not necessary to heat the side wall 10a of the plasma processing chamber 10, the amount of energy for forming and maintaining the inner wall surface of the plasma processing space 10s in a hot wall state during plasma processing can be significantly reduced compared to the conventional case, that is, the energy efficiency related to plasma processing can be significantly improved.

[0060] Further, according to the present embodiment, the shield member 51 forming the inner wall surface of the plasma processing space 10s is thermally separated from the side wall 10a of the plasma processing chamber 10 having a large heat capacity and is formed with a small thickness so as to have a small heat capacity. Thereby, the heat generated by the heat generation of the magnetic body 53 can be appropriately used for heating the shield member 51, the time required for heating the shield member 51 can be shortened, and the time required for starting up the plasma processing process can be significantly shortened.

[0061] Furthermore, since the temperature of the shield member 51 (the inner wall surface of the plasma processing space 10s) can be easily adjusted in this way, for example, the surface temperature of the shield member 51 can be adjusted according to the plasma processing process, and the adhesion of the deposit to the shield member 51 can be easily controlled. That is, thereby, the plasma processing for the substrate W can be stably performed.

[0062] Also, according to the present embodiment, the magnetic body 53 provided inside the shield member 51 can be inductively heated wirelessly by utilizing the induction magnetic field M emitted from the induction heating coil 52 without being electrically connected to the induction heating coil 52 provided outside the plasma processing chamber 10. That is, it is possible to reduce the power supply cable that connected the heating element and the power supply in the temperature adjustment means of the conventional plasma processing chamber. As a result, for example, when high-frequency power supplied from the RF power supply 31 to the lower electrode during plasma processing is suppressed from entering as a noise component into the heating power supply system for generating the induction magnetic field M in the induction heating coil 52, the risk of abnormal discharge, backflow of high-frequency current, or contamination caused by the installation of the power supply cable as in the prior art can be appropriately reduced.

[0063] Furthermore, according to the present embodiment, since it is not necessary to connect a power supply cable or the like to the magnetic body 53 in this way, it is possible to further reduce the installation of the RF cut filter that was conventionally provided along with the power supply cable to suppress the above-described abnormal discharge and backflow of high-frequency current. As a result, the space related to the installation of the RF cut filter can be reduced, and the number of components of the heating mechanism 50 can be reduced compared to the prior art, that is, the space and cost related to the installation of the heating mechanism 50 can be appropriately reduced.

[0064] Also, as shown in FIG. 6, the shield member 51 according to the present embodiment has a plurality of magnetic bodies 53 arranged side by side inside, and the frequency of the supply current is controlled by an inverter circuit for each induction heating coil 52 corresponding to each magnetic body 53 (or for each temperature control region formed by a group of induction heating coils 52), so that the temperature can be independently controlled for each induction heating coil 52 (for each temperature control region). As a result, for example, even when there is a bias in the distribution of the ambient temperature in the plasma processing space 10s during plasma processing, the bias in the temperature distribution can be appropriately eliminated, and plasma processing on the substrate W can be appropriately performed.

[0065] As shown in FIG. 2, when a plurality of induction heating coils 52 are arranged side by side outside the plasma processing chamber 10 corresponding to each of the plurality of magnetic bodies 53, the induction magnetic fields M respectively emitted from the adjacent induction heating coils 52 interfere with each other, which may prevent the magnetic bodies 53 corresponding to the respective induction heating coils 52 from being appropriately heated. Specifically, for example, the induction magnetic field M emitted from one induction heating coil 52 acts on the magnetic body 53 provided corresponding to another induction heating coil 52 provided adjacent thereto, so that the magnetic body 53 may not generate heat appropriately.

[0066] Therefore, in order to suppress the interference of such induction magnetic fields M, a magnetic shield 57 that reflects and absorbs the induction magnetic field M may be provided between the adjacent induction heating coils 52. As the magnetic shield 57, preferably, a plate-like member having a relative permeability μ>1, such as stainless steel, can be selected.

[0067] FIG. 9 is an explanatory diagram showing an installation example of the magnetic shield 57. As shown in FIG. 9, the magnetic shield 57 is provided between the adjacent induction heating coils 52 with a magnetic shield 57 larger in diameter than the induction heating coils 52. More specifically, the magnetic shield 57 is provided so as to surround the induction heating coils 52 in a front view. Thereby, the leakage of the induction magnetic field M emitted from the induction heating coils 52 in the adjacent direction is suppressed, the interference of the induction magnetic field M is suppressed, and the heating of the magnetic body 53 (substrate W) can be appropriately performed.

[0068] Also, as shown in FIG. 10, the magnetic shield 57 may be further disposed on the side opposite to the side wall 10a (magnetic body 53) of the plasma processing chamber 10 (on the atmosphere space side) along the plane direction of the induction heating coil 52. In other words, the magnetic shield 57 may be further disposed outside the plasma processing chamber 10 with the induction heating coil 52 interposed therebetween. In this way, by further providing the magnetic shield 57 on the side opposite to the magnetic body 53 (atmosphere space side) along the plane direction of the induction heating coil 52, a part of the induction magnetic field M emitted from the induction heating coil 52 toward the atmosphere space side can be reflected toward the magnetic body 53 side. Thereby, the directivity of the induction magnetic field M with respect to the magnetic body 53 side can be improved, and the heating efficiency of the magnetic body 53 (shield member 51) can be further improved.

[0069] In the embodiment, the directivity of the induction magnetic field M with respect to the magnetic body 53 side is improved by closing the surfaces of the induction heating coil 52 other than the magnetic body 53 side with the magnetic shield 57. However, for example, when it is desired to improve the directivity of the induction magnetic field M in other directions, the installation position of the magnetic shield 57 may be appropriately changed.

[0070] In the above embodiment, as shown in FIGS. 2 and 6, the induction heating coils 52 are arranged side by side over the entire surface of the shield member 51, that is, the entire surface of the shield member 51 is configured to be temperature adjustable. However, the arrangement of the induction heating coils 52 is not limited to this.

[0071] Specifically, if the magnetic body 53 is disposed on at least a part within the surface of the shield member 51, in other words, on at least a part of the inner wall surface of the plasma processing space 10s, the shield member 51 can be heated by the heat generation of the magnetic body 53 to adjust the atmospheric temperature of the plasma processing space 10s.

[0072] In the above-described embodiments, as shown in FIG. 2, for example, a plurality of magnetic bodies 53 are arranged in a one-to-one correspondence with each of the plurality of induction heating coils 52 disposed in the plane of the shield member 51. In other words, the induction heating coils 52 and the magnetic bodies 53 are installed in the plasma processing apparatus 1 in the same number, but the number of installations of each of the induction heating coils 52 and the magnetic bodies 53 is not limited to this.

[0073] Specifically, as shown in FIG. 11, one magnetic body 53 may be configured to be induction-heated by a plurality (two in the illustrated example) of induction heating coils 52. Thereby, the number of magnetic bodies 53 disposed inside the shield member 51 can be reduced, and the cost related to the installation of the heating mechanism 50 can be reduced.

[0074] In the above-described embodiments, the case where the magnetic body 53 is disposed inside the shield member 51 has been described as an example, but the configuration of the heating mechanism 50 is not limited to this. For example, as shown in FIG. 12, the magnetic body 53 may be configured as a separate body from the shield member 51, and the magnetic body 53 may be provided on the surface of the shield member 51 opposite to the plasma processing space 10s. In such a case, the above-described vacuum heat insulation space 50s is formed between the magnetic body 53 and the side wall 10a.

[0075] By configuring the shield member 51 and the magnetic body 53 as separate bodies in this way, it is not necessary to provide the magnetic body 53 inside, so the thickness of the shield member 51 can be further reduced. That is, the shield member 51 can be heated more efficiently. Further, even when the shield member 51 and the magnetic body 53 are configured as separate bodies in this way, the above-described vacuum heat insulation space 50s is formed between the magnetic body 53 and the side wall 10a, so heat transfer from the magnetic body 53 to the side wall 10a is suppressed, and the shield member 51 can be heated more appropriately.

[0076] In addition, in the heating mechanism 50 according to the above embodiment, a heat transfer fluid (e.g., brine or gas) may be configured to flow through the vacuum heat insulation space 50s formed between the shield member 51 (the magnetic body 53 in the example shown in FIG. 12) and the side wall 10a of the plasma treatment space 10s. In other words, as shown in FIGS. 13 and 14, a fluid supply unit 58 for supplying the heat transfer fluid L to the vacuum heat insulation space 50s and a fluid discharge unit 59 for discharging the heat transfer fluid L from the vacuum heat insulation space 50s may be connected to the vacuum heat insulation space 50s.

[0077] In such a case, for example, as shown in FIG. 13, when the heat transfer fluid L does not flow through the vacuum heat insulation space 50s (the vacuum heat insulation space 50s is in a vacuum state), the shield member 51 and the side wall 10a are thermally separated, and the shield member 51 can be efficiently heated by the heat generation of the magnetic body 53. On the other hand, for example, as shown in FIG. 14, when the heat transfer fluid L flows through the vacuum heat insulation space 50s, the shield member 51 and the side wall 10a are thermally connected by the heat transfer fluid L. That is, heat transfer occurs from the heated shield member 51 to the side wall 10a through the heat transfer fluid L, and thereby the shield member 51 can be cooled. By configuring the vacuum heat insulation space 50s to be capable of flowing the heat transfer fluid L in this way, by controlling the flow of the heat transfer fluid L, in addition to heating for temperature adjustment of the shield member 51, cooling can be performed more appropriately. Thereby, the adjustment of the surface temperature of the shield member 51 (the atmospheric temperature of the plasma treatment space 10s) can be performed more appropriately, that is, the plasma treatment can be performed more appropriately on the substrate W.

[0078] Note that, instead of switching the heating and cooling of the shield member 51 and the side wall 10a by flowing the heat transfer fluid L through the vacuum heat insulation space 50s in this way, for example, the shield member 51 may be configured to be movable inside the plasma processing space 10s, so that the shield member 51 and the side wall 10a can be physically contacted. Thereby, for example, when the shield member 51 and the side wall 10a are separated, the shield member 51 is heated, and for example, when the shield member 51 and the side wall 10a are in contact, the shield member 51 is cooled.

[0079] Note that, in the above embodiments, the shield member 51 and the side wall 10a are thermally separated by forming the vacuum heat insulation space 50s as a heat insulation layer between the shield member 51 and the side wall 10a. However, the configuration of the heat insulation layer is not limited to this. Specifically, for example, the shield member 51 can also be thermally separated from the side wall 10a by connecting the shield member 51 to the side wall 10a via a heat insulation member (not shown) as the heat insulation layer, that is, the heating of the shield member 51 can be efficiently performed.

[0080] However, when the shield member 51 and the side wall 10a are connected via such a heat insulation member, the cooling of the shield member 51 as described above cannot be performed. That is, for example, in addition to the inability to appropriately flow the heat transfer fluid L, the shield member 51 and the side wall 10a cannot be directly contacted. In view of this point, it is desirable that the heat insulation layer formed between the shield member 51 and the side wall 10a is the vacuum heat insulation space 50s.

[0081] Note that, in the above embodiments, the induction heating coil 52 is formed by a circular coil member and the magnetic body 53 is formed by a rectangular plate member, respectively. However, the shapes of the induction heating coil 52 and the magnetic body 53 are not limited to this as long as the magnetic body 53 can generate heat by induction heating. That is, for example, the induction heating coil 52 may be formed in a rectangular shape or may be composed of a plate member. Also, the magnetic body 53 may be formed in a circular shape, for example, or may be composed of a coil member.

[0082] Thus, although the induction heating coil 52 and the magnetic body 53 can be configured in any shape, from the viewpoint of uniformly controlling the wall surface temperature of the shield member 51 and the atmospheric temperature in the plasma processing space 10s, the shapes of the induction heating coil 52 and the magnetic body 53 are preferably shapes that can be evenly spread over the entire surface of the shield member 51 (for example, rectangular arrangement or honeycomb arrangement).

[0083] In the above embodiment, the shield member 51 is arranged so as to cover the entire surface of the side wall 10a of the plasma processing chamber 10, and the magnetic body 53 is arranged in at least a part of the shield member 51 as shown in FIG. 6. However, the configuration of the heating mechanism 50 is not limited to this.

[0084] For example, the shield member 51 does not necessarily need to be arranged so as to cover the entire surface of the side wall 10a. As shown in FIG. 15, it may be arranged only on at least a part of the side wall 10a, for example, only in the range where the magnetic body 53 is provided. In other words, the shield member 51 does not necessarily need to constitute all of the inner wall surface of the plasma processing space 10s, and it may constitute at least a part of the inner wall surface. In such a case, the plasma processing space 10s is defined by the dielectric window 101, the side wall 10a, the shield member 51 of the heating mechanism 50, and the substrate support 11.

[0085] In the above embodiment, the heating mechanism 50 is arranged along the side wall 10a of the plasma processing chamber 10 so that the shield member 51 forms the inner wall surface of the plasma processing space 10s. However, the arrangement of the heating mechanism 50 is not limited to this.

[0086] Specifically, as shown in FIG. 16, the heating mechanism 50 may be further provided on the member forming the plasma processing space 10s, which is a part particularly susceptible to deposition due to being exposed to plasma during plasma processing.

[0087] More specifically, for example, as shown in FIG. 16, a heating mechanism 50a may be provided for heating the dielectric window 101 that constitutes the top portion of the plasma processing chamber 10 in a heatable manner. In such a case, the magnetic body 53 may be provided inside the shield member 51 that is thermally separated from the dielectric window 101 by the method shown in FIG. 2, or may be directly disposed inside the dielectric window 101 as shown in FIG. 16. Even in such a case, since the heat capacity of the dielectric window 101 is small at least compared to the side wall 10a of the plasma processing chamber 10, the dielectric window 101 can be appropriately heated.

[0088] Also, for example, as shown in FIG. 16, a heating mechanism 50b may be provided for heating the insulator ring 102 provided between the dielectric window 101 and the side wall 10a in a heatable manner. In such a case, the magnetic body 53 may be directly disposed inside the insulator ring 102. Further, for example, when the insulator ring 102 is small and it is difficult to dispose the magnetic body 53 inside, the insulator ring 102 may be indirectly heated by heating the dielectric window 101 and the side wall 10a in the vicinity of the insulator ring 102.

[0089] Also, for example, as shown in FIG. 16, a heating mechanism 50c may be provided for heating at least a part of the side wall 10a of the plasma processing chamber 10, which constitutes the shutter 60, in a heatable manner. In such a case, the magnetic body 53 may be directly disposed inside the shutter 60, or the shutter 60 may be indirectly heated by heating the adjacent side wall 10a. However, when the magnetic body 53 is directly disposed inside the shutter 60, the induction heating coil 52 for heating the magnetic body 53 cannot be disposed at the opening that forms the carry-in / outlet 60a. Therefore, the induction heating coil 52 for heating the magnetic body 53 disposed inside the shutter 60 may be disposed along the outer wall surface of the side wall 10a, for example, around the carry-in / outlet 60a as shown in FIG. 16.

[0090] Furthermore, for example, as shown in FIG. 16, a heating mechanism 50d may be provided with a baffle plate 41 that partitions between the plasma processing space 10s and the gas discharge port 10e being disposed so as to be heatable. In such a case, the magnetic body 53 may be directly disposed inside the baffle plate 41, or as shown in FIG. 16, the baffle plate 41 may be indirectly heated by heating the nearby side wall 10a or the substrate support 11.

[0091] As described above, as shown in FIG. 16, in addition to or instead of the shield member 51 provided along the side wall 10a, the heating mechanism 50 may be disposed such that various members constituting the plasma processing space 10s can be heated. In this way, by adjusting the inner surface temperature of the plasma processing chamber 10 constituting the plasma processing space 10s, the adhesion of deposits to the inner surface of the plasma processing chamber 10 (plasma processing space 10s) can be easily controlled. That is, thereby, the plasma processing on the substrate W can be stably performed.

[0092] Also, in the above embodiments, the heating mechanism 50 is disposed so as to heat the members forming the plasma processing space 10s, but the heating mechanism 50 may be disposed at still another site.

[0093] Specifically, as shown in FIG. 17, a heating mechanism 50e is provided such that the wall surface portion of the exhaust space (more specifically, the substrate support 11 constituting the lower electrode, the support member 113 of the substrate support 11, or the wall surface portion of the plasma processing chamber 10) formed on the downstream side of the exhaust path with respect to the baffle plate 41 inside the plasma processing chamber 10 or the vicinity of the gas discharge port 10e can be heated. Even on the downstream side of the exhaust path with respect to these baffle plates 41, there is a possibility that deposits may adhere due to, for example, the permeation of plasma from the plasma processing space 10s or the influence of impurities contained in the exhaust gas. Therefore, by configuring the downstream side of the exhaust path to be temperature-adjustable by the heating mechanism 50 in this way, such adhesion of deposits can be appropriately suppressed.

[0094] In the above embodiments, the case where the shutter 60 that opens and closes the loading / unloading port 60a is provided in a part of the circumferential direction on the side wall 10a of the plasma processing chamber 10 has been described as an example. However, the configuration of the shutter mechanism is not limited to this. Specifically, for example, in another embodiment, the shutter mechanism may be configured such that the shutter 60 that opens and closes the loading / unloading port 60a shown in FIG. 1 and the shield member 51 of the heating mechanism 50 are integrally formed.

[0095] In addition, in the example shown in FIG. 17, the temperature of the exhaust path is adjusted by the heating mechanism 50 arranged on the support member 113. However, instead of or in addition to this, the inner circumferential side of the support member 113, that is, the lower space of the substrate support 11 may be configured to be temperature adjustable.

[0096] FIGS. 18 and 19 are a longitudinal sectional view and a perspective view showing an outline of the configuration of a shutter mechanism 150 according to another embodiment. As shown in the drawings, the shutter mechanism 150 that opens and closes the loading / unloading port 60a may include a valve body 151 in which a shutter and a deposition shield are integrally formed, and a lifting mechanism 152 that is configured to be able to move the valve body 151 up and down.

[0097] The valve body 151 includes an annular valve body along the inner circumference of the side wall 10a of the plasma processing chamber 10, that is, it is arranged so as to surround the entire circumference of the substrate support 11 arranged inside the plasma processing chamber 10. The valve body 151 is configured to be able to move up and down by the operation of the lifting mechanism 152, and can move between the closed position and the retracted position of the loading / unloading port 60a by such up and down movement.

[0098] Also, as described above, the valve body 151 is arranged so as to cover at least a part of the side wall 10a of the plasma processing chamber 10 when the loading / unloading port 60a is closed, and can function as a shield member that functions as a substantially inner wall surface of the plasma processing space 10s.

[0099] And even when the shutter mechanism 150 is provided in this way, that is, when the valve body 151 is configured in an annular shape, the heating mechanism 50 according to the technology of the present disclosure can be applied. In other words, the heating mechanism 50 may be provided so as to be able to heat the shutter mechanism 150. In such a case, the magnetic body 53 may be directly disposed inside the valve body 151, or the valve body 151 may be indirectly heated by heating the nearby side wall 10a.

[0100] Also, for example, as shown in FIG. 18, when the valve body 151 is provided in the shutter mechanism 150, the heating mechanism 50 may be arranged so as to heat the entire area other than the formation position of the carry-in outlet (opening) of the substrate W on the side wall 10a of the plasma processing chamber 10, that is, other than the portion facing the opening in the internal space of the plasma processing chamber 10.

[0101] In the above embodiments, the case of adjusting the temperature of the shield member 51 during the plasma processing performed in the plasma processing apparatus 1 has been described as an example, but the timing of adjusting the temperature of the shield member 51 is not limited to this. Specifically, for example, the shield member 51 may be heated after the cleaning process of the plasma processing apparatus 1 and before the substrate W is carried in.

[0102] Immediately after the cleaning process of the plasma processing apparatus 1, the cleaning liquid used for such a cleaning process may remain inside the plasma processing chamber 10. In such a case, there is a risk that chemical effects such as corrosion may occur at the location where the cleaning liquid remains, or that deposits generated by the plasma processing may accumulate. Furthermore, when the cleaning liquid remaining during the plasma processing scatters and adheres to the substrate W, this may also deteriorate the process result of the substrate W.

[0103] Therefore, in the plasma processing apparatus 1 according to the present embodiment, after the cleaning process, the shield member 51 is heated before the substrate is carried in, thereby removing the cleaning liquid remaining inside the plasma processing chamber 10. As a result, the occurrence of problems caused by the above-mentioned remaining cleaning liquid can be suppressed. Further, in the present embodiment, since the shield member 51 is heated without heating the side wall 10a of the plasma processing chamber 10 as described above, the temperature of the shield member 51 can be immediately raised to the temperature required for removing the cleaning liquid. That is, since the heating efficiency of the shield member 51 is good, the time required for starting up the plasma processing apparatus 1 can be appropriately reduced.

[0104] It should be considered that all the embodiments disclosed this time are illustrative in all respects and not restrictive. The above embodiments may be omitted, replaced, or changed in various forms without departing from the scope and gist of the appended claims.

[0105] For example, in the above embodiment, in the plasma processing apparatus 1 that performs plasma processing on the substrate W, the case where the heating mechanism 50 adjusts the ambient temperature (the surface temperature of the shield member 51) of the processing space has been described as an example. However, the type of substrate processing apparatus in which the heating mechanism 50 is installed is not limited to this. As the processing apparatus in which the heating mechanism 50 is arranged, for example, a heat treatment apparatus such as a CVD (Chemical Vapor Deposition) apparatus or an annealing apparatus, or a transfer apparatus that transfers the substrate W can be arbitrarily selected. In particular, any processing apparatus that requires adjusting the ambient temperature (or the side wall temperature of the processing chamber) of the processing space during substrate processing can preferably enjoy the effects of the technology according to the present disclosure.

Description of Reference Numerals

[0106] 1 Plasma processing apparatus 10 Plasma processing chamber 10a Side wall 10s Plasma processing space 50s Vacuum heat insulation space 51 Shield member 52 Induction heating coil 53 Magnetic body M Inductive magnetic field W Substrate

Claims

1. A substrate processing apparatus for processing a substrate, comprising: a processing chamber having a processing space for the substrate formed therein; a heating mechanism for adjusting the internal temperature of the processing chamber; a shield member provided inside the processing chamber, spaced apart from the inner wall surface of the processing chamber, and defining at least a part of the side wall portion of the processing space; The heating mechanism includes: an induction heating element that heats at least the shield member by generating heat due to an induction magnetic field; a magnetic field generating portion disposed along the outer wall surface of the processing chamber for generating the induction magnetic field.

2. The substrate processing apparatus according to claim 1, further comprising a heat insulating layer for heat insulating between the shield member and the inner wall surface of the processing chamber.

3. The substrate processing apparatus according to claim 2, wherein a vacuum heat insulating space is formed as the heat insulating layer between the shield member and the inner wall surface of the processing chamber.

4. The substrate processing apparatus according to claim 3, further comprising a fluid supply portion for supplying a heat transfer fluid to the vacuum heat insulating space and a fluid discharge portion for discharging the heat transfer fluid from the vacuum heat insulating space.

5. The substrate processing apparatus according to claim 1, wherein the induction heating element is disposed inside the shield member.

6. The substrate processing apparatus according to claim 2, wherein the induction heating element is disposed on the wall surface of the shield member on the heat insulating layer side.

7. The substrate processing apparatus has a shutter mechanism including a valve body for opening and closing a substrate loading / unloading port formed in a side wall portion of the processing chamber and a lifting mechanism for configuring the valve body to be movable up and down inside the processing chamber, The substrate processing apparatus according to claim 1, wherein the shield member is integrally formed with the valve body of the shutter mechanism.

8. The substrate processing apparatus according to claim 1, wherein the induction heating element is disposed such that at least a part thereof overlaps the magnetic field generating portion in a front view.

9. The substrate processing apparatus according to claim 8, wherein the induction heating element is disposed such that the entire surface thereof overlaps the magnetic field generating portion in a front view.

10. The substrate processing apparatus according to claim 1, wherein the induction heating element is formed of a plate member or a coil member.

11. ​ The induction heating element includes an iron-containing material including any one of carbon steel, silicon iron, stainless steel, permalloy, or ferrite, or is composed of at least any one of aluminum, tungsten, tin, titanium, carbon, silicon, or silicon carbide. The substrate processing apparatus according to claim 1.

12. The substrate processing apparatus includes a plurality of the induction heating elements and a plurality of the magnetic field generation units. The shield member is configured to be independently heatable for each of a plurality of predetermined temperature control regions. The substrate processing apparatus according to claim 1.

13. In the substrate processing apparatus, the same number of the induction heating elements and the magnetic field generation units are provided such that one of the magnetic field generation units corresponds to one of the induction heating elements. The substrate processing apparatus according to claim 12.

14. In the substrate processing apparatus, a plurality of the induction heating elements are provided so as to correspond to one of the magnetic field generation units. The substrate processing apparatus according to claim 13.

15. The substrate processing apparatus is a plasma processing apparatus that performs plasma processing on the substrate. A plurality of the heating mechanisms are arranged in the plasma processing apparatus. The plurality of heating mechanisms can heat at least any one of a dielectric window that forms the ceiling of the processing space, an insulator ring that connects the dielectric window and the processing chamber, an exhaust space that evacuates the inside of the processing space, a baffle plate that partitions the processing space and the exhaust space, or a shutter mechanism that opens and closes a substrate loading / unloading port formed in a side wall portion of the processing chamber. The substrate processing apparatus according to any one of claims 1 to 14.

16. A magnetic shield that suppresses the transmission of the induction magnetic field is provided so as to surround the magnetic field generation unit in a front view. The substrate processing apparatus according to any one of claims 1 to 14.

17. A magnetic shield that suppresses the transmission of the induction magnetic field is provided outside the processing chamber with the magnetic field generation unit interposed therebetween. The substrate processing apparatus according to any one of claims 1 to 14.

18. The magnetic shield is composed of a member having a relative permeability of 1 or less. The substrate processing apparatus according to claim 16.

19. The substrate processing apparatus according to any one of claims 1 to 14 further includes a drive mechanism that moves a part of the magnetic field generation unit closer to or away from the induction heating element.

20. A substrate processing apparatus for processing a substrate, A processing chamber in which a processing space for the substrate is formed inside, A heating mechanism for adjusting the internal temperature of the processing chamber; A shield member provided inside the processing chamber, disposed at a distance from the inner wall surface of the processing chamber, and defining at least a part of the side wall portion of the processing space; and has, The heating mechanism is, An induction heating element that heats at least the shield member by generating heat by an induction magnetic field; A magnetic field generation unit that generates the induction magnetic field; A substrate processing apparatus having a drive mechanism that moves a part of the magnetic field generation unit closer to or away from the induction heating element.

21. A method for processing a substrate in a substrate processing apparatus, comprising: The substrate processing apparatus is, A processing chamber in which a processing space for the substrate is formed inside; A shield member disposed at a distance from the inner wall surface of the processing chamber and defining at least a part of the side wall portion of the processing space; A heat insulating layer that insulates between the shield member and the inner wall surface of the processing chamber; An induction heating element that heats at least the shield member by generating heat by an induction magnetic field; A magnetic field generation unit provided outside the processing chamber that generates the induction magnetic field; and has, The method for processing the substrate is, Generating an induction magnetic field by supplying an electric current to the magnetic field generation unit, and heating the shield member by the induction magnetic field; Adjusting the amount of electric current supplied to the magnetic field generation unit based on at least one of the ambient temperature of the processing chamber or the amount of reaction product adhering to the shield member. A substrate processing method including steps.

22. A vacuum heat insulating space as the heat insulating layer is formed between the shield member and the inner wall surface of the processing chamber, The method for processing the substrate is, The substrate processing method according to claim 21, further comprising a step of supplying a heat transfer fluid to the vacuum heat insulating space to cool the shield member.

23. The substrate processing apparatus is, A gas supply unit that supplies a processing gas to the processing space; A plasma generation unit that generates plasma in the processing space by the processing gas; and has, The method for processing the substrate is, After supplying the processing gas into the processing chamber, generating plasma in the processing space. The substrate processing method according to claim 21 or 22.

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