Plasma corrosion-resistant rare earth oxide-based thin film coating

Abstract

To provide an article for a processing chamber having a thin film protective layer to protect a surface exposed to a plasma.SOLUTION: An article comprises a body and at least one protective layer on at least one surface of the body. The at least one protective layer is a thin film having a thickness of less than approximately 20 microns, comprising a ceramic selected from the group consisting of Y3Al5O12, Y4Al2O9, Er2O3, Gd2O3, Er3Al5O12, Gd3Al5O12 and a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3-ZrO2.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] Embodiments of the present invention generally relate to chamber components having a plasma-resistant protective layer for thin films. Background

[0002] In the semiconductor industry, devices are fabricated by many manufacturing processes that create structures of ever-decreasing size. Some manufacturing processes (e.g., plasma etching and plasma cleaning processes) expose the substrate to a high-speed flow of plasma to etch or clean the substrate. Plasma can be very erosive and can erode the processing chamber and other surfaces exposed to the plasma.

Brief Description of the Drawings

[0003] The present invention is shown by way of example and not limitation in the figures of the accompanying drawings, in which like reference numerals indicate like elements. It should be noted that different references to "one" or "a" embodiment in this disclosure are not necessarily references to the same embodiment, and such references mean at least one.

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[0004] Embodiments of the present invention provide an article (e.g., a chamber component) for a processing chamber having a thin film protective layer on one or more surfaces of the article. The protective layer can have a thickness of about 20 microns or less and can provide plasma corrosion resistance to protect the article. The protective layer can be formed on the article using ion assisted deposition (IAD) or physical vapor deposition (PVD). The thin film protective layer can be used as a top coat, for example, on a thick film protective layer that can be formed using plasma spraying techniques. In some embodiments, a thin film protective layer stack including two or more thin film protective layers is formed on the article. In such embodiments, each thin film protective layer can be formed by IAD or PVD and can have a thickness of about 20 microns or less. The thin film protective layer is Y 3 Al 5 O 12 、Y 4 Al 2 O 9 、Er 2 O 3 、Gd 2 O 3 、Er 3 Al 5 O 12 、Gd 3 Al 5 O 12 、or, Y 4 Al 2 O 9 and Y 2 O 3 -ZrO 2 and a solid solution of can be a ceramic compound containing. While reducing maintenance and manufacturing costs, the improved corrosion resistance provided by the thin film protective layer can improve the service life of the article.

[0005] FIG. 1 is a cross-sectional view of a semiconductor processing chamber 100 having one or more chamber components coated with a thin film protective layer according to an embodiment of the present invention. The processing chamber 100 can be used for processes that provide a corrosive plasma environment inside. For example, the processing chamber 100 can be a chamber for a plasma etching apparatus or a plasma etching reactor, a plasma cleaner, etc. Examples of chamber components that can include the thin film protective layer are a substrate support assembly 148, an electrostatic chuck (ESC) 150, a ring (e.g., a process kit ring or a single ring), a chamber wall, a base, a gas distribution plate, a showerhead, a liner, a liner kit, a shield, a plasma screen, a flow equalizer, a cooling base, a chamber viewport, a chamber lid, etc. The thin film protective layer, which will be described in more detail below, is Y 3 Al 5 O 12 (YAG), Y 4 Al 2 O 9 (YAM), Er 2 O 3 , Gd 2 O 3 , Er 3 Al 5 O 12 (EAG), Gd 3 Al 5 O 12 (GAG), and / or, Y 4 Al 2 O 9 and Y 2 O 3 -ZrO 2 a solid solution with can include a ceramic compound containing. The thin film protective layer is Y 2 O 3 , Y 2 O 3 -based ceramics, Er 2 O 3 -based ceramics, Gd 2 O 3 -based ceramics, and other rare earth oxides can also be included.

[0006] The thin film protective layer can be an IAD or PVD coating applied on different ceramics, including oxide-based ceramics, nitride-based ceramics, or carbide-based ceramics. Examples of oxide-based ceramics include SiO 2 (quartz), Al 2 O 3 、Y 2 O 3 and so on. Carbide-based ceramics include SiC, Si-SiC, etc. Nitride-based ceramics include AlN, SiN, etc. The IAD or PVD coating target material can be calcined powder, pre-formed mass (formed by, for example, green body pressing, hot pressing, etc.), sintered body (having a density of, for example, 50 - 100%), machined body (ceramics, metal, or metal alloy is possible), or pre-melt (100% density). The substrate can also be a metal substrate (such as Al, Ti, stainless steel, or anodized Al).

[0007] As shown, the substrate support assembly 148 has a thin film protective layer 136 according to one embodiment. However, it should be understood that any of the other chamber components (such as those listed above) can also include a thin film protective layer.

[0008] In one embodiment, the processing chamber 100 includes a chamber body 102 surrounding an internal volume 106 and a showerhead 130. The showerhead can include a showerhead base and a showerhead gas distribution plate. Alternatively, in some embodiments, the showerhead 130 can be replaced with a lid and nozzles. The chamber body 102 can be manufactured from aluminum, stainless steel, or other suitable materials. The chamber body 102 generally includes sidewalls 108 and a bottom 110. Any of the showerhead 130 (or lid and / or nozzles), sidewalls 108, and / or bottom 110 can include a thin film protective layer.

[0009] The outer liner 116 can be disposed adjacent to the sidewall 108 to protect the chamber body 102. The outer liner 116 can be manufactured and / or coated with a thin film protective layer. In one embodiment, the outer liner 116 is made of aluminum oxide.

[0010] The exhaust port 126 can be defined within the chamber body 102 and can couple the internal volume 106 to a pump system 128. The pump system 128 can include one or more pumps and throttle valves used to evacuate and adjust the pressure of the internal volume 106 of the processing chamber 100.

[0011] The showerhead 130 can be supported on the sidewall 108 of the chamber body 102. The showerhead 130 (or lid) can open to allow access to the internal volume 106 of the processing chamber 100 and can close while providing a seal to the processing chamber 100. A gas panel 158 is coupled to the processing chamber 100 and can thereby provide a processing gas and / or a cleaning gas to the internal volume 106 through the showerhead 130 or lid and nozzles. The showerhead 130 is used for a processing chamber used for dielectric etching (etching of a dielectric material). The showerhead 130 includes a gas distribution plate (GDP) 133 having a plurality of gas delivery holes 132 therethrough. The showerhead 130 can include a GDP 133 coupled to an aluminum base or an anodized aluminum base. The GDP 133 can be made of Si or SiC, or can be a ceramic (e.g., Y 2 O 3 、Al 2 O 3 、YAG, etc.).

[0012] For a processing chamber used for conductor etching (etching of a conductive material), a lid can be used instead of a showerhead. The lid can include a central nozzle that fits into a central hole of the lid. The lid can be a ceramic (e.g., Al 2 O3 , Y 2 O 3 , YAG, or Y 4 Al 2 O 9 and Y 2 O 3 -ZrO 2 A ceramic compound containing a solid solution thereof can be used. The nozzle can also be made of ceramics (e.g., Y 2 O 3 , YAG, or Y 4 Al 2 O 9 and Y 2 O 3 -ZrO 2 A ceramic compound containing a solid solution thereof can be used. The lid, showerhead base 104, GDP 133, and / or nozzle can be coated with a thin film protective layer.

[0013] Examples of process gases that can be used to process a substrate in the processing chamber 100 include halogen-containing gases (e.g., especially C 2 F 6 , SF 6 , SiCl 4 , HBr, NF 3 , CF 4 , CHF 3 , CH 2 F 3 , F, NF 3 , Cl 2 , CCl 4 , BCl 3 , and SiF 4 ), and other gases (e.g., O 2 , or N 2 O). Examples of carrier gases include N 2, He, Ar, and other gases (e.g., non-reactive gases) that are inert to the process gas. The substrate support assembly 148 is disposed within the internal volume 106 of the processing chamber 100 under the showerhead 130 or lid. The substrate support assembly 148 holds the substrate 144 during processing. The ring 146 (e.g., a single ring) can cover a portion of the electrostatic chuck 150 and can protect the covered portion from exposure to plasma during processing. The ring 146 can be made of silicon or quartz in one embodiment.

[0014] The inner liner 118 may be coated on the peripheral portion of the substrate support assembly 148. The inner liner 118 can be a halogen-containing gas resist material (e.g., the one described with reference to the outer liner 116). In one embodiment, the inner liner 118 can be manufactured from the same material as the outer liner 116. Also, the inner liner 118 can be coated with a thin film protective layer.

[0015] In one embodiment, the substrate support assembly 148 includes a mounting plate 162 that supports a pedestal 152 and an electrostatic chuck 150. The electrostatic chuck 150 further includes a thermally conductive base 164 and an electrostatic pack 166 joined to the thermally conductive base by an adhesive 138 (which can be a silicone adhesive in one embodiment). The upper surface of the electrostatic pack 166 is covered by a thin film protective layer 136 in the illustrated embodiment. In one embodiment, the thin film protective layer 136 is disposed on the upper surface of the electrostatic pack 166. In another embodiment, the thin film protective layer 136 is disposed on the entire exposed surface of the electrostatic chuck 150 including the outer and side peripheral portions of the thermally conductive base 164 and the electrostatic pack 166. The mounting plate 162 is coupled to the bottom 110 of the chamber body 102 and includes passages for routing utilities (e.g., fluids, power lines, sensor leads, etc.) to the thermally conductive base 164 and the electrostatic pack 166.

[0016] The thermal conductivity base 164 and / or the electrostatic chuck 166 can include one or more optional embedded heating elements 176, embedded thermal insulators 174, and / or conduits 168, 170, thereby controlling the lateral temperature profile of the support assembly 148. The conduits 168, 170 can be fluidly coupled to a fluid source 172 that circulates a temperature regulating fluid through the conduits 168, 170. The embedded thermal insulator 174 can be disposed, in one embodiment, between the conduits 168, 170. The heater 176 is regulated by a heater power supply 178. The conduits 168, 170 and the heater 176 are utilized to control the temperature of the thermal conductivity base 164, thereby heating and / or cooling the electrostatic chuck 166 and the substrate (e.g., wafer) being processed. The temperatures of the electrostatic chuck 166 and the thermal conductivity base 164 can be monitored using a plurality of temperature sensors 190, 192 that can be monitored using a controller 195.

[0017] The electrostatic chuck 166 can further include a plurality of gas passages (e.g., grooves, mesas, and other surface structures that can be formed within the upper surface of the chuck 166 and / or the thin film protective layer 136). The gas passages can be fluidly coupled to a source of heat transfer (or backside) gas (e.g., He) through holes opened within the chuck 166. During operation, the backside gas is supplied into the gas passages at a controlled pressure, thereby improving the heat transfer between the electrostatic chuck 166 and the substrate 144.

[0018] The electrostatic chuck 166 includes at least one clamping electrode 180 controlled by a chucking power supply 182. The electrode 180 (or other electrodes disposed within the chuck 166 or the base 164) can be further coupled to one or more RF power supplies 184, 186 via a matching circuit 188 to maintain a plasma formed from a process gas and / or other gases within the processing chamber 100. The power supplies 184, 186 can generally generate RF signals having a frequency of from about 50 kHz to about 3 GHz and a maximum power of about 10,000 watts.

[0019] Figures 2A to 5 show cross-sectional side views of an article (e.g., a chamber component) covered by one or more thin film protective layers. Referring to Figure 2A, at least a portion of the base or body 205 of the article 200 is covered by a thin film protective layer 208. The article 200 can be a chamber component (e.g., a substrate support assembly, an electrostatic chuck (ESC), a ring (e.g., a process kit ring or a single ring), a chamber wall, a base, a gas distribution plate or showerhead, a liner, a liner kit, a shield, a plasma screen, a flow equalizer, a cooling base, a chamber viewport, a chamber lid, etc.). The body 205 of the article 200 can be made of metal, ceramics, a metal-ceramics composite material, a polymer, or a polymer-ceramics composite material.

[0020] Various chamber components are composed of different materials. For example, an electrostatic chuck can be made of ceramics (e.g., Al 2 O 3 (alumina), AlN (aluminum nitride), TiO (titanium oxide), TiN (titanium nitride), or SiC (silicon carbide) bonded to an anodized aluminum base). Al 2 O 3 , AlN, and anodized aluminum have poor plasma corrosivity. When exposed to a plasma environment involving fluorine chemistry (chemical substances) and / or reduction chemistry, the electrostatic pack of the electrostatic chuck may exhibit wafer chucking degradation, an increase in the He leak rate, the production of particles on the front and back sides of the wafer, and metal contamination on the wafer after about 50 high-frequency hours (RF hours) of processing. The high-frequency hour is one hour of processing.

[0021] Al 2 O 3 has high bending strength and high thermal conductivity, so the lid for a plasma etching apparatus used in a conductor etching process can be a sintered ceramic such as Al 2 O 3 . However, Al 2 O 3Forms AlF particles and aluminum metal contamination on the wafer. Some chamber lids have a thick film protective layer on the side facing the plasma, thereby minimizing particle generation and metal contamination and extending the life of the lid. However, most thick film coating technologies have long lead times. Also, in most thick film coating technologies, special surface preparation is performed to prepare the article (e.g., the lid) to receive the coating. Such long lead times and coating preparation processes can increase costs, reduce productivity, and potentially inhibit refurbishment (regeneration). Also, most thick film coatings have inherent cracks and pores that can degrade the characteristics of defects on the wafer.

[0022] Process kit rings and single rings are used to seal and / or protect other chamber components and are typically made of quartz or silicon. These rings are placed around the substrate being supported (e.g., the wafer), thereby ensuring a uniform plasma density (and thus uniform etching). However, quartz and silicon have very high erosion rates under various etching chemistries (e.g., plasma etching chemistries). Also, when exposed to plasma chemistries, such rings can cause particle contamination. Process kit rings and single rings can also consist of ceramic compounds containing a solid solution of sintered ceramics (e.g., YAG) and / or Y 4 Al 2 O 9 and Y 2 O 3 -ZrO 2 and a solid solution of

[0023] The showerhead for an etching apparatus used to perform a dielectric etching process is typically made of anodized aluminum bonded to a SiC faceplate. Such a showerhead can form AlF due to plasma interaction with the anodized aluminum base when exposed to a plasma chemistry containing fluorine. Also, the high erosion rate of the anodized aluminum base can cause an arc discharge and ultimately reduce the average time between cleanings for the showerhead.

[0024] The viewport of the chamber (also known as the endpoint window) is typically a transparent component made of quartz or sapphire. Various optical sensors can be protected by the viewport and readings of the optical sensors can be taken through the viewport. Also, the viewport can enable a user to visually inspect or view the wafer during processing. Both quartz and sapphire have poor plasma corrosion resistance. The plasma chemistry erodes and roughens the viewport, so the optical properties of the viewport change. For example, the viewport can become cloudy and / or the optical signal passing through the viewport can be distorted. This can impair the ability of the optical sensors to collect accurate measurements. However, thick film protective layers may be unsuitable for use on the viewport as these coatings can potentially block the viewport.

[0025] The examples provided above describe only a few chamber components whose performance can be improved by using thin film protective layers as described in the embodiments of this specification.

[0026] Referring back to FIG. 2A, the body 205 of the article 200 can include one or more surface structures (e.g., the mesa illustrated in FIG. 2A). In the case of an electrostatic chuck, the surface structures can include mesas, sealing bands, gas channels, helium holes, etc. In the case of a showerhead, the surface structures can include joint lines, hundreds or thousands of holes for gas distribution, divots or bumps around the gas distribution holes, etc. Other chamber components can have other surface structures.

[0027] The thin film protective layer 208 formed on the body 205 can follow the surface structure of the body 205. As shown, the thin film protective layer 208 maintains the relative shape of the upper surface of the body 205 (e.g., conveys the shape of the mesa). Also, the thin film coating can be made thin enough not to block the holes of the showerhead or the He holes in the electrostatic chuck. In one embodiment, the thin film protective layer 208 has a thickness of less than about 20 microns. In a further embodiment, the thin film protective layer has a thickness between about 0.5 microns and about 7 microns.

[0028] The thin film protective layer 208 is a deposited ceramic layer that can be formed on the body 205 of the article 200 using an ion assist deposition (IAD) or physical vapor deposition (PVD) process. One example of an IAD process that can be implemented is electron beam ion assist deposition (EB-IAD). The IAD or PVD deposited thin film protective layer 208 can have a relatively low film stress (e.g., as compared to film stress caused by plasma spraying or sputtering). The relatively low film stress can make the lower surface of the body 205 very flat with a curvature of less than about 50 microns across the entire body for a 12-inch diameter body. The IAD or PVD deposited thin film protective layer 208 can further have a porosity of less than 1%, and in some embodiments, less than about 0.1%. Thus, the IAD or PVD deposited thin film protective layer is a dense structure that can have performance advantages for applications to chamber components. Also, the IAD or PVD deposited protective layer 208 can be deposited without first roughening the upper surface of the first body 205 or performing other time-consuming surface preparation steps. Roughening the body can potentially reduce the breakdown voltage of the body 205, so the ability to apply the thin film protective layer 208 without first roughening the body 205 can be beneficial for some applications (e.g., for electrostatic chucks).

[0029] Examples of ceramics that can be used to form the thin film protective layer 208 are Y 3 Al 5 O 12 、Y 4 Al 2 O 9 、Er 2 O 3 、Gd 2 O 3 、Er 3 Al 5 O 12 、Gd 3 Al 5 O 12 、 or Y 4 Al 2 O 9 and Y 2 O 3-ZrO 2 solid solution of (Y 2 O 3 -ZrO 2 solid solution). The ceramic compound contains other Er-based and / or Gd-based plasma-resistant rare earth oxides and can also be used to form the thin film protective layer 208. In one embodiment, the thin film protective layer is YAG composed of 35 mol% of Y 2 O 3 and 65 mol% of Al 2 O 3 In another embodiment, the ceramic coating can be YAG composed of 30-40 mol% of Y 2 O 3 and 60-70 mol% of Al 2 O 3 In one embodiment, the ceramic compound contains 62.93 mol% of Y 2 O 3 23.23 mol% of ZrO 2 and 13.94 mol% of Al 2 O 3 In another embodiment, the ceramic compound can contain Y 2 O 3 in the range of 50-75 mol%, ZrO 2 in the range of 10-30 mol%, and Al 2 O 3 in the range of 10-30 mol%. In other embodiments, other distributions can also be used for the ceramic compound. Any of the above-mentioned ceramics may also contain trace amounts of other materials (e.g., ZrO 2 , Al 2 O 3 , SiO 2 , B 2 O 3 , Er 2 O 3 , Nd 2 O 3 , Nb 2 O 5 , CeO 2 , Sm 2 O 3 , Yb 2 O 3 , or other oxides).

Table 1

[0030] Table 1 shows the material properties for a 92% Al 2 O 3 (alumina) substrate and for various thin film protective layers that coat the 92% Al 2 O 3 substrate. As shown, the alumina substrate has a breakdown voltage of 363 volts per mil (V / mil). In contrast, a 5 micron (μm) coating of an IAD-deposited ceramic compound containing a solid solution of Y 4 Al 2 O 9 and Y 2 O 3 -ZrO 2 has a breakdown voltage of 2500 V (much greater than the normalized value of 363 V / mil for alumina). A 5 μm coating of IAD-deposited YAG has a breakdown voltage of 6800 V. A 5 μm coating of IAD-deposited Er 2 O 3 has a breakdown voltage of 527 V. A 5 μm coating of IAD-deposited EAG has a breakdown voltage of 900 V.

[0031] The volume resistivity of alumina is approximately 0.01×10 16 (0.01E16) Ω·cm at room temperature. The volume resistivity of the ceramic compound thin film protective layer is approximately 4.1E16 Ω·cm at room temperature, and the volume resistivity of the YAG thin film protective layer is approximately 11.3E16 Ω·cm at room temperature.

[0032] The dielectric constant of alumina is approximately 9.2, the dielectric constant of the ceramic compound thin film is approximately 9.83, the dielectric constant of the YAG thin film is approximately 9.76, the dielectric constant of the Er 2 O 3 thin film is approximately 9.67, and the dielectric constant of the EAG thin film is approximately 9.54. The loss tangent of alumina is approximately 5E-4, the loss tangent of the ceramic compound thin film is approximately 4E-4, the loss tangent of the YAG thin film is approximately 4E-4, and the loss tangent of the Er2 O 3 The loss tangent of the thin film is about 4E-4, and the loss tangent of the EAG thin film is about 4E-4. The thermal conductivity of alumina is about 18 W / m·K, the thermal conductivity of the ceramic compound thin film is about 19.9 W / m·K, the thermal conductivity of the YAG thin film is about 20.1 W / m·K, and Er 2 O 3 The thermal conductivity of the thin film is about 19.4 W / m·K, and the thermal conductivity of the EAG thin film is about 19.2 W / m·K.

[0033] The alumina substrate can have an initial roughness of about 8 microinches in one embodiment, and the initial roughness can be made substantially uniform across all of the thin film protective layers. The height of the structure (e.g., the height of the mesa of the inner seal band (ISB) and the height of the mesa of the outer seal band (OSB)) can also be made substantially uniform as a result of the deposition of any of the thin film protective layers, as shown. The adhesion strength of the thin film protective layer to the alumina substrate can exceed 28 megapascals (MPa) for the ceramic compound thin film and exceed 32 MPa for the YAG thin film. The adhesion strength can be determined by measuring the amount of force used to separate the thin film protective layer from the substrate. Hermiticity measures the sealing ability that can be achieved using the thin film protective layer. As shown, using alumina, a He leak rate of about 1E-6 cubic centimeters per second (cm 3 / s) can be achieved, using the ceramic compound, a He leak rate of about 1.2E-9 can be achieved, using YAG, a He leak rate of about 4.4E-10 can be achieved, and using Er 2 O 3 a He leak rate of about 5.5E-9 can be achieved, and using EAG, a He leak rate of about 9.5E-10 can be achieved. A lower He leak rate indicates an improved seal. Each of the thin film protective layers of the examples has a lower He leak rate than the Al 2 O 3 substrate.

[0034] Y 3 Al 5 O 12 、Y 4 Al2 O 9 、 Er 2 O 3 、 Gd 2 O 3 、 Er 3 Al 5 O 12 、 Gd 3 Al 5 O 12 、 and Y 4 Al 2 O 9 and Y 2 O 3 -ZrO 2 Each of the ceramic compounds containing a solid solution of and has a high hardness that can withstand wear during plasma processing. As shown, alumina has a Vickers hardness (5 kgf) of about 12.14 gigapascals (GPa), the ceramic compound has a hardness at about 7.825 GPa, YAG has a hardness of about 8.5 GPa, and Er 2 O 3 has a hardness of about 5.009 GPa, and EAG has a hardness of about 9.057 GPa. The measured wear rate of alumina is about 0.2 nanometers per RF hour (nm / RF hour), the wear rate of the ceramic compound is about 0.14 nm / RF hour, and the wear rate of Er 2 O 3 is about 0.113 nm / RF hour, and the wear rate of EAG is about 0.176 nm / RF hour.

[0035] Note that Y 3 Al 5 O 12 、 Y 4 Al 2 O 9 、 Er 2 O 3 、 Gd 2 O 3 、 Er 3 Al 5 O 12 、 Gd 3 Al 5 O 12、And it should be noted that in some embodiments, the ceramic compound can be modified such that the properties and characteristics of the materials specified above can vary by up to 30%. Therefore, the values described for these material properties should be understood as achievable values in the examples. The ceramic thin film protective layer described herein should not be construed as limited to the provided values.

[0036] Figure 2B shows a cross-sectional side view of one embodiment of an article 250 having a body 255 coated by a thin film protective layer 258. As shown, the body 255 can be free of structure. In one embodiment, the body 255 is polished prior to deposition of the thin film protective layer 258. Instead of having a structure within the body 255, a structure can be formed within the thin film protective layer 258. For example, the thin film protective layer 258 can be masked and then etched or bead blasted to remove the unmasked portions of the thin film protective layer 258. A structure can also be formed by applying a thin coating after masking the substrate. The formed structure can include mesas, channels, seal rings, exposed bonding lines (such as for a shower head), etc. Also, holes can be drilled into the thin film protective layer (e.g., by laser drilling). When the structure is formed within the thin film protective layer 258, the thin film protective layer should preferably have a thickness sufficient to accommodate the structure. For example, if a 12 μm mesa is formed within the thin film protective layer, the thin film protective layer 258 should have a thickness greater than 12 μm. In other embodiments, some structures can be formed within the body 255 and other structures can be formed within the thin film protective layer 258.

[0037] Figure 3 shows a cross-sectional side view of one embodiment of an article 300 having a thick protective layer 330 and a thin film protective layer 308. The thick protective layer is Y 3 Al 5 O 12 、Y 4 Al 2 O 9 、Y 2 O 3 、or, Y 4 Al2 O 9 and Y 2 O 3 -ZrO 2 It can be a ceramic compound containing a solid solution thereof. Other plasma-resistant ceramics can also be used for the thick protective layer 330.

[0038] The thick protective layer 330 can be a thick-film protective layer that may be thermally sprayed (e.g., plasma sprayed) onto the body 305. The upper surface of the body 305 can be roughened before plasma spraying the thick-film protective layer thereon. The roughening can be performed, for example, by bead blasting the body 305. Roughening the upper surface of the body provides an anchor point for creating a mechanical bond between the plasma-sprayed thick-film protective layer and the body 305 for better adhesion. The thick-film protective layer can have a spray thickness of up to about 200 microns or more, and in some embodiments, can be ground down to a final thickness of about 50 microns. The plasma-sprayed thick-film protective layer can have a porosity of about 2 - 4%.

[0039] Alternatively, the thick protective layer 330 can be a bulk-sintered ceramic joined to the body 305. The thick protective layer 330 can be provided, for example, as a thin ceramic wafer having a thickness of about 200 microns.

[0040] The thin-film protective layer 308 can be applied onto the thick protective layer 330 using IAD or PVD. The thin-film protective layer 308 can serve as a top coat, can serve as a corrosion-resistant barrier, and can seal the exposed surface of the thick protective layer 330 (e.g., seal the inherent surface cracks and pores within the thick protective layer 330).

[0041] Figure 4 shows a cross-sectional side view of one embodiment of an article 400 having a thin-film protective layer stack 406 deposited on a body 405 of the article 400. Each thin-film protective layer 408, 410 within the thin-film protective layer stack 406 is Y 3 Al 5 O 12(YAG), Y 4 Al 2 O 9 , Er 2 O 3 , Gd 2 O 3 , Er 3 Al 5 O 12 , Gd 3 Al 5 O 12 , and Y 4 Al 2 O 9 and Y 2 O 3 -ZrO 2 and a solid solution of . In one embodiment, the same ceramic material is not used for two adjacent thin film protection layers. However, in another embodiment, adjacent layers may be composed of the same ceramic.

[0042] 5 illustrates a cross-sectional side view of another embodiment of an article 500 having a thin film protective layer stack 506 deposited on a body 505 of the article 500. Article 500 is similar to article 400, except that the thin film protective layer stack 506 has four thin film protective layers 508, 510, 515, 518.

[0043] The thin film protective layer stack (such as that shown) can have any number of thin film protective layers. The thin film protective layers in the stack can all have the same thickness, or they can have varying thicknesses. Each of the thin film protective layers can have a thickness of less than about 20 microns, and in some embodiments, less than about 10 microns. In one example, the first layer 408 can have a thickness of 3 microns and the second layer 410 can have a thickness of 3 microns. In another example, the first layer 508 can be a YAG layer having a thickness of 2 microns, the second layer 510 can be a compound ceramic layer having a thickness of 1 micron, the third layer 515 can be a YAG layer having a thickness of 1 micron, and the fourth layer 518 can be a compound ceramic layer having a thickness of 1 micron.

[0044] The selection of the number of ceramic layers to be used and the composition of the ceramic layers may be based on the desired application and / or the type of article to be coated. The EAG and YAG thin film protective layers formed by IAD and PVD typically have an amorphous structure. In contrast, the IAD and PVD deposited compound ceramics and Er 2 O 3 layers typically have a crystalline or nanocrystalline structure. Crystalline and nanocrystalline ceramic layers can generally have higher corrosion resistance than amorphous ceramic layers. However, in some cases, thin film ceramic layers having a crystalline or nanocrystalline structure may sometimes experience vertical cracks (cracks running substantially in the film thickness direction and approximately perpendicular to the surface to be coated). Such vertical cracks can be due to lattice mismatch and can be a point of attack for plasma chemistry. Each time the article is heated and cooled, the mismatch in the coefficient of thermal expansion between the thin film protective layer and the substrate it coats causes stress in the thin film protective layer. Such stress can concentrate in vertical cracks. This can cause the thin film protective layer to eventually peel away from the substrate it coats. In contrast, in the absence of vertical cracks, the stress is distributed more or less evenly throughout the thin film. Thus, in one embodiment, the first layer 408 within the thin film protective layer stack 406 is an amorphous ceramic (e.g., YAG or EAG), and the second layer 410 within the thin film protective layer stack 406 is a crystalline or nanocrystalline ceramic (e.g., a ceramic compound or Er 2 O 3 ). In such an embodiment, the second layer 410 can provide higher plasma resistance than the first layer 408. By forming the second layer 410 on the first layer 408 rather than directly on the body 405, the first layer 408 serves as a buffer, thereby minimizing the lattice mismatch of subsequent layers. Thus, the life of the second layer 410 can be increased.

[0045] In another example, the body, Y 3 Al 5 O12 (YAG), Y 4 Al 2 O 9 , Er 2 O 3 , Gd 2 O 3 , Er 3 Al 5 O 12 , Gd 3 Al 5 O 12 , and Y 4 Al 2 O 9 and Y 2 O 3 -ZrO 2 Each of the ceramic compounds containing a solid solution thereof can have a different coefficient of thermal expansion. The greater the mismatch in the coefficient of thermal expansion between two adjacent materials, the greater the likelihood that one of those materials will ultimately crack, peel, or otherwise lose its bond with the other material. The protective layer stacks 406, 506 can be formed to minimize the mismatch in the coefficient of thermal expansion between adjacent layers (or between the layers and the bodies 405, 505). For example, the body 505 can be alumina, the EAG can have a coefficient of thermal expansion closest to that of alumina, followed by the coefficient of thermal expansion of YAG, and then the coefficient of thermal expansion of the compound ceramics. Thus, in one embodiment, the first layer 508 can be EAG, the second layer 510 can be YAG, and the third layer 515 can be a compound ceramic.

[0046] In another example, the layers within the protective layer stack 506 can be alternating layers of two different ceramics. For example, the first layer 508 and the third layer 515 can be YAG, and the second layer 510 and the fourth layer 518 can be compound ceramics. Such alternating layers can provide advantages similar to those described above when one of the materials used within the alternating layers is amorphous and the other material used within the alternating layers is crystalline or nanocrystalline.

[0047] In some embodiments, one or more layers within the thin film protective layer stacks 406, 506 are transition layers formed using heat treatment. When the bodies 405, 505 are ceramic bodies, high-temperature heat treatment can be performed to promote interdiffusion between the thin film protective layer and the body. The heat treatment may also be performed to promote interdiffusion between adjacent thin film protective layers or between a thick protective layer and a thin film protective layer. In particular, the transition layer can be a non-porous layer. The transition layer can serve as a diffusion bond between two ceramics and can provide improved adhesion between adjacent ceramics. This can help prevent the protective layer from cracking, peeling, or flaking during plasma processing.

[0048] The heat treatment can be a heat treatment at a maximum of about 1400 - 1600 °C for up to about 24 hours (for example, 3 - 6 hours in one embodiment). This can create an interdiffusion layer between the first thin film protective layer and one or more of the adjacent ceramic body, thick protective layer, or second thin film protective layer. When the ceramic body is Al 2 O 3 and the protective layer is composed of the compound ceramic Y 4 Al 2 O 9 and the solid solution Y 2-x Zr x O 3 (Y 2 O 3 -ZrO 2 solid solution), a Y 3 Al 5 O 12 (YAG) interface layer is formed. Similarly, the heat treatment forms a transition layer of EAG between Er 2 O 3 and Al 2 O 3 . The heat treatment also forms a transition layer of YAG between Y 2 O 3 and Al 2 O 3 . The heat treatment also forms GAG between Gd 2 O 3 and Al 2 O 3 . Al 2 O3 The heat treatment of the above yttria-stabilized zirconia (YSZ) can form a transition layer of a compound ceramic of Y 4 Al 2 O 9 (YAM) and solid solution Y 2-x Zr x O 3 and. Other transition layers may be formed between other adjacent ceramics.

[0049] FIG. 6 shows one embodiment of a process 600 for forming a thin film protective layer on the body of an article (e.g., a chamber component). At block 605 of process 600, an article is provided. At block 610, a determination is made as to whether a thick film protective layer is to be deposited on the article. If a thick film protective layer is formed, the method proceeds to block 615. Otherwise, the method continues to block 620.

[0050] At block 615, a spraying process (e.g., a plasma spraying process) is performed to deposit a thick film protective layer on the article. Prior to performing the spraying process, in some embodiments, the body of the article can be roughened. The thick film protective layer can be any plasma-resistant ceramic. Some examples of thick film protective layers are Y 3 Al 6 O 12 , Y 4 Al 2 O 9 , Y 2 O 3 , YSZ, or Y 4 Al 2 O 9 and Y 2 O 3 -ZrO 2 and a solid solution of. After forming the thick film protective layer, for some applications, a surface structure is formed on the surface of the thick film protective layer. For example, if the article is an ESC, a mesa and He holes can be formed. In an alternative embodiment, instead of spraying the thick film protective layer, a plasma-resistant ceramic disk or other ceramic structure can be joined to the body of the article.

[0051] In block 620, IAD or PVD is performed, thereby depositing a thin film protective layer on the body of the article. If a thick film protective layer is formed in block 615, the thin film protective layer can be formed on the thick film protective layer as a top coat. The thin film protective layer is Y 3 Al 6 O 12 、Y 4 Al 2 O 9 、Er 2 O 3 、Gd 2 O 3 、Er 3 Al 5 O 12 、Gd 3 Al 5 O 12 、or, Y 4 Al 2 O 9 and Y 2 O 3 -ZrO 2 of a solid solution with a ceramic compound. The deposition rate of the thin film protective layer can be about 1 to 8 angstroms per second and can be varied by adjusting the deposition parameters. The thin film protective layer can be highly conformal, can have a uniform thickness, and can have good adhesion to the body / substrate on which they are deposited.

[0052] In block 625, a determination is made as to whether to deposit an additional thin film protective layer. If an additional thin film protective layer is deposited, the process continues to block 630. In block 630, another thin film protective layer is formed on the first thin film protective layer. The other thin film protective layer may be composed of a ceramic different from the ceramic of the first thin film protective layer. In one embodiment, the other thin film protective layer is Y 3 Al 6 O 12 、Y 4 Al 2 O 9 、Er 2 O 3 、Gd 2 O 3 、Er 3Al 6 O 12 、 Gd 3 Al 6 O 12 、 or Y 4 Al 2 O 9 and Y 2 O 3 - ZrO 2 is one of the ceramic compounds with a solid solution of. Then, the method returns to block 625. At block 625, if no additional thin film protective layer is applied, the process ends. After any of the thin film protective layers are deposited, a surface structure may be formed within the thin film protective layer.

[0053] Figure 7A shows a deposition mechanism applicable to various deposition techniques using high - energy particles such as ion - assisted deposition (IAD). A typical IAD method, as described herein, includes a deposition process incorporating ion bombardment (e.g., vapor deposition (e.g., activated reactive evaporation (ARE)) and sputtering in the presence of ion bombardment), thereby forming a plasma - resistant coating. Any of the IAD methods can be carried out in the presence of reactive gas species (e.g., O 2 、 N 2 、 halogens, etc.).

[0054] As shown, the thin film protective layer 715 is formed by the accumulation of the deposition material 702 in the presence of high - energy particles 703 such as ions. The deposition material 702 includes atoms, ions, radicals, or mixtures thereof. The high - energy particles 703 can collide with and compress the thin film protective layer 715 when the thin film protective layer 715 is formed.

[0055] In one embodiment, as described elsewhere in this specification, IAD is utilized to form the thin film protective layer 715. FIG. 7B shows a schematic diagram of an IAD deposition apparatus. As shown, the material source 750 provides a flux of deposition material 702, while the high energy particle source 755 provides a flux of high energy particles 703, and both of these collide with the material source 750 through the IAD process. The high energy particle source 755 can be an oxygen or other ion source. The high energy particle source 755 can also provide other types of high energy particles (e.g., inert radicals, neutron atoms, and nano-sized particles) derived from the source of the particles (e.g., plasma, reactive gas-derived, or the material source providing the deposition material). The material source (e.g., target body) 750 used to provide the deposition material 702 can be a bulk sintered ceramic corresponding to the same ceramics that make up the thin film protective layer 715. For example, the material source can be a bulk sintered ceramic composite, or bulk sintered YAG, Er 2 O 3 、Gd 2 O 3 、Er 3 Al 5 O 12 、or Gd 3 Al 5 O 12 and so on. IAD can utilize one or more plasmas or beams to provide the material and the high energy ion source. Reactive species can also be supplied during the deposition of the plasma-resistant coating. In one embodiment, the high energy particles 703 include at least one of non-reactive species (e.g., Ar) or reactive species (e.g., O). In a further embodiment, reactive species (e.g., CO) and halogens (Cl, F, Br, etc.) can also be introduced during the formation of the plasma-resistant coating, thereby further enhancing the tendency to selectively remove the deposition material most weakly bonded to the thin film protective layer 715.

[0056] By the IAD process, the high-energy particles 703 can be controlled independently of other deposition parameters by a high-energy ion (or other particle) source 755. Depending on the energy (e.g., velocity), the density and incident angle of the high-energy ion flux, the composition, structure, crystal orientation, and particle size of the thin-film protective layer can be manipulated. Additional adjustable parameters are the temperature of the article during deposition and the duration of deposition. The ion energy can be roughly classified into low-energy ion assist and high-energy ion assist. The ions are emitted at a higher velocity using high-energy ion assist than using low-energy ion assist. Generally, better performance has been shown when using high-energy ion assist. The temperature of the substrate (article) during deposition can be roughly divided into low temperature (in one embodiment, about 120 - 150 °C, which is a typical room temperature) and high temperature (in one embodiment, about 270 °C). [Table 2]

[0057] Table 2 shows the thin-film protective layers of a plurality of examples formed using IAD with various deposition parameters. Y 4 Al 2 O 9 and Y 2 O 3 -ZrO 2 Five different examples are shown for the thin-film protective layer formed from a ceramic compound with a solid solution of. The compound ceramic thin-film protective layer of the first example has a thickness of 5 microns and is formed using IAD with low-energy ion assist, a deposition temperature of 270 °C, and a deposition rate of 2 angstroms per second (A / s). X-ray diffraction showed that the compound ceramic thin-film protective layer of the first example has a crystalline structure. The compound ceramic thin-film protective layer of the first example also has a hardness of 4.11 GPa, and visual inspection showed good conformity to the underlying substrate and some vertical cracks and some spikes.

[0058] The compound ceramic thin film protective layer of the second embodiment has a thickness of 6 microns and is formed using low-energy ion assist, a deposition temperature of 270 °C, and IAD with a deposition rate of 1 A / s for the first 2 microns and a deposition rate of 2 A / s for the subsequent 4 microns. X-ray diffraction showed that the compound ceramic thin film protective layer of the second embodiment has a nanocrystalline structure (partially crystalline and partially amorphous inside). When used as a seal, the compound ceramic thin film protective layer of the second embodiment was able to maintain a vacuum of at least 5E-6 cm 3 / s. Visual inspection of the compound ceramic thin film protective layer of the second embodiment showed good conformity and fewer vertical cracks than the compound ceramic thin film protective layer of the first embodiment.

[0059] The compound ceramic thin film protective layer of the third embodiment has a thickness of 5 microns and is formed using low-energy ion assist, a deposition temperature of 270 °C, and IAD with a deposition rate of 1 A / s. X-ray diffraction showed that the compound ceramic thin film protective layer of the third embodiment has a nanocrystalline structure. When used as a seal, the compound ceramic thin film protective layer of the third embodiment was able to maintain a vacuum of at least 6.3E-6 cm 3 / s. Visual inspection of the compound ceramic thin film protective layer of the third embodiment showed good conformity and fewer vertical cracks than the compound ceramic thin film protective layer of the first embodiment.

[0060] The compound ceramic thin film protective layer of the fourth embodiment has a thickness of 5 microns and is formed using high-energy ion assist, a deposition temperature of 270 °C, and IAD with a deposition rate of 1 A / s for the first 1 micron and a deposition rate of 2 A / s for the subsequent 4 microns. X-ray diffraction showed that the compound ceramic thin film protective layer of the third embodiment has an almost amorphous structure. When used as a seal, the compound ceramic thin film protective layer of the third embodiment was able to maintain a vacuum of at least 1.2E-9 cm 3It was possible to maintain a vacuum down to / s. Visual inspection of the compound ceramic thin film protective layer of the fourth embodiment showed good conformity, a smooth surface, and very few vertical cracks. Also, the compound ceramic thin film protective layer of the fourth embodiment has a hardness of 7.825 GPa.

[0061] The compound thin film protective layer of the fifth embodiment has the same parameters as the compound thin film protective layer of the fourth embodiment, but the deposition temperature was formed using room temperature (about 120 - 150 °C). The compound thin film protective layer of the fifth embodiment showed the same characteristics as the compound thin film protective layer of the fourth embodiment.

[0062] The YAG thin film protective layer of the first embodiment has a thickness of 5 microns and was formed using low - energy ion assist, a deposition temperature of 270 °C, and IAD with a deposition rate of 2.5 Å / s. X - ray diffraction showed that the first YAG ceramic thin film protective layer has an amorphous structure. The first YAG ceramic thin film protective layer also has a hardness of 5.7 GPa, and visual inspection showed good conformity, minimal cracks, and a smooth surface.

[0063] The YAG thin film protective layer of the second embodiment has a thickness of 5 microns and was formed using high - energy ion assist, a deposition temperature of 270 °C, and IAD with a deposition rate of 1 Å / s for the first 1 micron and 2 Å / s for the subsequent 4 microns. X - ray diffraction showed that the second YAG thin film protective layer has an amorphous structure. The second YAG thin film protective layer also has a hardness of 8.5 GPa, and visual inspection showed good conformity, a reduction in cracks compared to the first YAG thin film, and a smooth surface.

[0064] A thin film protective layer stack of an embodiment having alternating layers of compound ceramics and YAG has a thickness of 5 microns and was formed using low - energy ion assist, a deposition temperature of 270 °C, and IAD with a deposition rate of 2 Å / s. X - ray diffraction showed that the alternating layers are amorphous (with respect to the YAG layer) and crystalline or nanocrystalline (with respect to the compound ceramic layer). Visual inspection showed a reduction in vertical cracks with respect to the compound ceramic layer.

[0065] Er of the first embodiment 2 O 3 The thin film protective layer has a thickness of 5 microns and is formed using low-energy ion assist, a deposition temperature of 270 °C, and IAD with a deposition rate of 2 A / s. X-ray diffraction showed that the first Er 2 O 3 ceramic thin film protective layer has a crystalline structure. Visual inspection showed good conformity and vertical cracks.

[0066] Er of the second embodiment 2 O 3 The thin film protective layer has a thickness of 5 microns and is formed using high-energy ion assist, a deposition temperature of 270 °C, and IAD with a deposition rate of 1 A / s for the first 1 micron and 2 A / s for the subsequent 4 microns. X-ray diffraction showed that the second Er 2 O 3 ceramic thin film protective layer has a crystalline structure. Visual inspection showed good conformity and smaller vertical cracks compared to the first Er 2 O 3 ceramic thin film protective layer.

[0067] The EAG thin film protective layer of the first embodiment has a thickness of 7.5 microns and is formed using high-energy ion assist, a deposition temperature of 270 °C, and IAD with a deposition rate of 1 A / s for the first 1 micron and 2 A / s for the subsequent microns. X-ray diffraction showed that the first EAG ceramic thin film protective layer has an amorphous structure and the layer has a hardness of 8.485 GPa. Visual inspection showed good conformity and minimal cracks.

[0068] The EAG thin film protective layer of the second embodiment has a thickness of 7.5 microns and is formed using high energy ion assist, a deposition temperature of 120 - 150 °C, and IAD with a deposition rate of 1 A / s for the first 1 micron and 2 A / s for the subsequent microns. X-ray diffraction showed that the second EAG ceramic thin film protective layer has an amorphous structure and the layer has a hardness of 9.057 GPa. Visual inspection showed good conformity and fewer cracks compared to the first EAG ceramic thin film protective layer.

[0069] Figures 8 - 9 show the erosion rate for the thin film protective layer formed according to an embodiment of the present invention. Figure 8 shows the erosion rate of the thin film protective layer when exposed to CH 4 / Cl 2 plasma chemistry. As shown, the IAD-deposited thin film protective layer shows much improved corrosion resistance compared to Al 2 O 3 . For example, alumina with 92% purity shows an erosion rate of about 18 nanometers per RF hour (nm / RF hour), and alumina with 99.8% purity shows an erosion rate of about 56 nm / RF hour. In contrast, the IAD-deposited compound ceramic thin film protective layer shows an erosion rate of about 3 nm / RF hour, and the IAD-deposited YAG thin film protective layer shows an erosion rate of about 1 nm / RF hour.

[0070] Figure 9 shows the erosion rate of the thin film protective layer when exposed to H 2 / NF 3 plasma chemistry. As shown, the IAD-deposited thin film protective layer shows much improved corrosion resistance compared to Al 2 O 3It shows significantly improved corrosion resistance compared to. For example, alumina with 92% purity showed an erosion rate of about 190 nm / RF time, and alumina with 99.8% purity showed an erosion rate of about 165 nm / RF time. In contrast, the IAD-deposited YAG thin film protective layer showed an erosion rate of about 52 nm / RF time. Similarly, the compound ceramic thin film protective layer deposited using IAD with low-energy ions showed an erosion rate of about 45 nm / RF time, and the compound ceramic thin film protective layer deposited using IAD with high-energy ions showed an erosion rate of about 35 nm / RF time. The EAG thin film protective layer deposited using IAD at a high deposition temperature (e.g., about 270 °C) showed an erosion rate of about 95 nm / RF time, and the EAG thin film protective layer deposited using IAD at a low deposition temperature (e.g., about 120 - 150 °C) showed an erosion rate of about 70 nm / RF time. The Er 2 O 3 thin film protective layer showed an erosion rate of about 35 nm / RF time.

[0071] Figures 10 - 11 show the roughness profiles for the thin film protective layers formed according to embodiments of the present invention. Figure 10 shows the surface roughness profile of the thin film protective layer of Figure 8 before and after exposure to CH 4 / Cl 2 plasma chemistry for 100 RF time. As shown, the IAD-deposited thin film protective layer shows the smallest change in surface roughness after exposure to CH 4 / Cl 2 plasma chemistry.

[0072] Figure 11 shows the surface roughness profile of the thin film protective layer of Figure 9 before and after exposure to H 2 / NF 3 plasma chemistry for 35 RF time. As shown, the IAD-deposited thin film protective layer shows the smallest change in surface roughness after exposure to H 2 / NF 3 plasma chemistry.

[0073] The foregoing description has set forth numerous specific details, such as examples of specific systems, components, methods, etc., to provide a good understanding of several embodiments of the present invention. However, it will be apparent to those skilled in the art that at least some embodiments of the present invention can be practiced without these specific details. In other instances, well-known components or methods have not been described in detail or are presented in a simple block diagram format so as not to obscure the present invention needlessly. Accordingly, the specific details described are merely illustrative. It is understood that in a particular implementation, it may differ from these illustrative details but still fall within the scope of the present invention.

[0074] References throughout this specification to "one embodiment" or "an embodiment" mean that a particular configuration, structure, or characteristic described in connection with that embodiment is included in at least one embodiment. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Also, the term "or" is intended to mean an inclusive "or" rather than an exclusive "or". The term "about" or "approximately" as used herein is intended to mean that the recited nominal value is accurate within ±30%.

[0075] Although the operations of the methods herein are illustrated and described in a particular order, the order of the operations of each method can be changed so that a particular operation is performed in a reverse order or so that a particular operation is at least partially executed concurrently with other operations. In another embodiment, the instructions or sub-operations of different operations can be made intermittent and / or alternating.

[0076] It should be understood that the above description is illustrative and not intended to be limiting. Many other embodiments will be apparent to those skilled in the art upon reading and understanding the above description. Accordingly, the scope of the present invention should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.

Claims

1. A chamber component for a processing chamber, a ceramic body, and Comprising one or more protective layers on at least one surface of a ceramic body, the one or more protective layers having a dielectric constant of 9.76 ± up to 30% and a hermicity of 4.4 E －１０ cm ３ / s ± up to 30% and containing Y ３ Al ５ O １２ and one or more protective layers having a porosity of less than 1%.

2. The chamber component according to claim 1, which is a chamber lid.

3. The ceramic body contains Al ２ O ３ The chamber component according to claim 1, which contains

4. One or more protective layers are CH ４ / Cl ２ The chamber component according to claim 1, which has an erosion rate of about 1 nm / hour ± up to 30% maximum when exposed to CH ４ / Cl ２ plasma chemistry.

5. One or more protective layers have at least one of a hardness of 8.5 GPa ± up to a maximum of 30%, a volume resistivity of 11.3 E １６ Ω·cm ± up to a maximum of 30%, or a thermal conductivity of 20.1 W / mK ± up to a maximum of 30%, the chamber component according to claim 1.

6. The protective layer of 1 or more contains 30 to 40 mol% of Y ２ O ３ and 60 to 70 mol% of Al ２ O ３ The chamber component according to claim 1, which contains

7. The chamber component according to claim 1, wherein one or more protective layers include a bulk-sintered ceramic joined to the ceramic body.

8. The chamber component according to claim 7, wherein one or more protective layers include a thin ceramic wafer having a thickness of 200 microns ± a maximum of 30%.

9. The chamber component according to claim 1, wherein one or more protective layers have a thickness of about 50 microns to about 200 microns.

10. The chamber component according to claim 1, wherein one or more protective layers have a thickness of less than about 20 microns.

11. The chamber component according to claim 1, wherein one or more protective layers include a stack of multiple protective layers.

12. The chamber component according to claim 1, wherein one or more protective layers include sintered ceramic.

13. The chamber component according to claim 1, wherein one or more protective layers include a thick-film protective layer and a thin-film protective layer on the thick-film protective layer, and the thick-film protective layer is thicker than the thin-film protective layer.

14. The chamber component according to claim 1, wherein the processing chamber is a plasma etching processing chamber.

15. The chamber component according to claim 14, wherein one or more protective layers include a plasma-resistant layer, and the outer surface of the plasma-resistant layer is exposed to plasma.

16. A processing chamber, comprising a chamber body, a substrate support within the chamber body, and a lid on the chamber body, Al ２ O ３ A ceramic body containing A protective layer on at least one surface of the ceramic body, the protective layer having a dielectric constant of 9.76 ± up to 30% and a hermicity of 4.4 E －１０ cm ３ / s ± up to 30%, and including a lid having the protective layer wherein the protective layer has a porosity of less than 1% and includes 30 - 40 mol% of Y₂O₃ and 60 - 70 mol% of Al₂O₃.

17. A chamber component for a processing chamber, comprising a ceramic body, and one or more protective layers on at least one surface of the ceramic body, wherein the one or more protective layers include Y₃Al₅O₁₂ having a dielectric constant of 9.76 ± a maximum of 30% and a hermicity of 4.4E - 10 cm³ / s ± a maximum of 30%. The chamber component with one or more protective layers contains 30 to 40 mol% of Y₂O₃ and 60 to 70 mol% of Al₂O₃.

18. The chamber component according to claim 17, wherein the ceramic body contains Al₂O₃.

19. The chamber component according to claim 17, wherein one or more protective layers have a thickness of about 50 microns to about 200 microns.

20. The chamber component according to claim 17, wherein one or more protective layers have a thickness of less than about 20 microns.

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