Substrate Processing Apparatus and Substrate Processing Method

Abstract

To provide a technique which improves the purity of a raw material gas to be supplied to a treatment chamber.SOLUTION: A substrate treatment apparatus includes a treatment chamber for treating a substrate, and a filtration part provided in a supply passage for supplying a gas to the treatment chamber and including a porous coordination polymer.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] Patent Document 1 discloses an exhaust system structure of a film forming apparatus capable of completely removing unreacted source gas, its reaction by-products, and the like.

[0003] Patent Document 2 discloses that in supplying a processing gas for processing a substrate for manufacturing a semiconductor device, it includes a concentration tank containing a porous member, and a desorption mechanism configured to desorb the processing gas adsorbed on the porous member. Patent Document 2 discloses that the porous member includes a metal organic framework configured to preferentially adsorb a processing gas mixed with a carrier gas.

[0004] Patent Document 3 discloses an apparatus for processing a substrate for manufacturing a semiconductor device having a processing gas supply unit configured to supply a processing gas to a chamber in which the substrate is accommodated. Patent Document 3 discloses that the processing gas supply unit has a raw material cartridge including a raw material tank containing a porous member including a metal organic framework that adsorbs gas molecules of a raw material of the processing gas.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0006] The present disclosure provides a technique for increasing the purity of a source gas supplied to a processing chamber.

Means for Solving the Problems

[0007] According to one aspect of the present disclosure, there is provided a substrate processing apparatus including a processing chamber for processing a substrate and a filtering unit including a porous coordination polymer provided in a supply path for supplying gas to the processing chamber.

Effects of the Invention

[0008] The present disclosure provides a technique for increasing the purity of a source gas supplied to a processing chamber.

Brief Description of the Drawings

[0009]

Figure 1

Figure 2

Figure 3

Figure 4

Modes for Carrying Out the Invention

[0010] Hereinafter, modes for carrying out the present disclosure will be described with reference to the drawings. In the present specification and the drawings, substantially the same configurations are denoted by the same reference numerals, and redundant descriptions are omitted. Note that, for ease of understanding, the scales of the respective parts in the drawings may be different from the actual ones.

[0011] For directions such as parallel, right-angled, orthogonal, horizontal, vertical, up and down, left and right, a deviation within a range that does not impair the effects of the embodiment is allowed. The shape of the corner is not limited to a right angle and may be arcuate and rounded. For parallel, right-angled, orthogonal, horizontal, and vertical, slightly parallel, slightly right-angled, slightly orthogonal, slightly horizontal, and slightly vertical may be included.

[0012] <<First Embodiment>> <Substrate Processing Apparatus 1> An example of a substrate processing apparatus according to the first embodiment, the substrate processing apparatus 1, and a substrate processing method using the substrate processing apparatus 1 will be described. FIG. 1 is a schematic configuration diagram of a substrate processing apparatus 1, which is an example of a substrate processing apparatus according to the first embodiment.

[0013] The substrate processing apparatus 1 is a film forming apparatus for forming a thin film such as a metal or a metal compound on a substrate. The substrate processing apparatus 1 forms a thin film by, for example, the ALD (Atomic Layer Deposition) method or the CVD (Chemical Vapor Deposition) method. The substrate processing apparatus 1 supplies a raw material gas and a reaction gas to a substrate placed in the processing chamber 10, and the raw material gas reacts with the reaction gas to form a thin film on the substrate. Note that the substrate processing apparatus 1 is not limited to a film forming apparatus and may be an apparatus for processing a substrate, such as an etching apparatus.

[0014] The substrate processing apparatus 1 includes a processing chamber 10, a raw material gas supply unit 20, a reaction gas supply unit 30, a purge gas supply unit 40, a gas exhaust unit 50, and a control unit 80. Each element will be described.

[0015] [Processing Chamber 10] The processing chamber 10 forms a thin film on the substrate inside. The processing chamber 10 includes a substrate support portion for placing the substrate inside. The substrate is processed while being placed on the substrate support portion. When the processing chamber 10 is used in, for example, a batch type film forming apparatus, it may include a wafer board for placing the substrate in multiple stages as the substrate support portion. Further, when the processing chamber 10 is used in, for example, a single wafer type film forming apparatus, it may include a mounting table for placing the substrate on the upper part as the substrate support portion. Furthermore, when used in, for example, a semi-batch type film forming apparatus, it may include a mounting table provided with a turntable as the substrate support portion.

[0016] A raw material gas supply portion 20, a reaction gas supply portion 30, and a purge gas supply portion 40 are connected to the processing chamber 10. The raw material gas is supplied from the raw material gas supply portion 20 to the processing chamber 10. Also, the reaction gas is supplied from the reaction gas supply portion 30 to the processing chamber 10. Further, the purge gas is supplied from the purge gas supply portion 40 to the processing chamber 10.

[0017] Also, a gas exhaust portion 50 is connected to the processing chamber 10. The gas exhaust portion 50 exhausts the gas inside the processing chamber 10. The gas exhaust portion 50 exhausts the gas inside the processing chamber 10 to make the inside of the processing chamber 10, for example, in a vacuum state. Also, the gas exhaust portion 50 exhausts the gas inside the processing chamber 10 after substrate processing to exhaust the raw material gas remaining inside the processing chamber 10 and the reaction product gas generated by the processing.

[0018] [Raw material gas supply portion 20] The raw material gas supply portion 20 supplies the raw material gas for forming the thin film to the processing chamber 10. The raw material gas supplied from the raw material gas supply portion 20 is determined by the film to be formed on the substrate. The raw material gas is, for example, a gas such as aluminum trichloride (AlCl3), titanium tetrachloride (TiCl4), tungsten pentachloride (WCl5). The raw material gas contains a precursor that constitutes the film to be laminated on the substrate.

[0019] The raw material gas supply unit 20 includes a raw material gas supply source 21, a raw material gas supply and cutoff valve 22, a flow rate adjustment unit 23, and a filtration unit 25. Here, the path from the raw material gas supply source 21 to the processing chamber 10 is referred to as the supply path Ls.

[0020] (Raw material gas supply source 21) The raw material gas supply source 21 supplies raw material gas to the processing chamber 10. When, for example, a solid material such as solid aluminum trichloride (AlCl3), which is a solid metal halide, is used as the raw material of the raw material gas, the raw material gas supply source 21 may be provided with a heating device for vaporizing the solid material. Further, for example, when the raw material of the raw material gas is dissolved in a solvent, a vaporization device for vaporizing the raw material gas may be provided by a direct liquid injection (DLI) method or the like. Furthermore, when the raw material gas can be stored as a single gas, the raw material gas supply source 21 may be provided with a storage device such as a tank for storing the raw material gas.

[0021] (Raw material gas supply and cutoff valve 22) The raw material gas supply and cutoff valve 22 supplies and stops the raw material gas from the raw material gas supply source 21 to the processing chamber 10. The raw material gas supply and cutoff valve 22 is connected to the control unit 80. Then, the control unit 80 controls the opening and closing of the raw material gas supply and cutoff valve 22.

[0022] (Flow rate adjustment unit 23) The flow rate adjustment unit 23 controls the flow rate of the raw material gas supplied from the raw material gas supply source 21 to the processing chamber 10. The flow rate adjustment unit 23 is, for example, a mass flow controller (MFC).

[0023] (Filtration unit 25) The filtration unit 25 removes impurities contained in the raw material gas. The filtration unit 25 is provided in the supply path Ls. In the filtration unit 25, a step of adsorbing impurities is performed.

[0024] The filtration unit 25 includes a filter 251 containing a porous coordination polymer (PCP) inside. The porous coordination polymer is also called a metal-organic framework (MOF). The porous coordination polymer contains metal complexes formed by coordination bonds between metal ions and organic ligands (organic compounds), and has a pore structure formed by the aggregation of a plurality of these metal complexes. The porous coordination polymer will be described in detail later.

[0025] The porous coordination polymer contained in the filter 251 of the filtration unit 25 selectively adsorbs impurities contained in the source gas supplied from the source gas supply source 21. By selectively adsorbing the impurities contained in the source gas supplied from the source gas supply source 21, the purity of the source gas flowing into the processing chamber 10 is increased. By increasing the purity of the source gas flowing into the processing chamber 10, the quality of the thin film formed on the substrate can be improved.

[0026] The impurities in the source gas supplied from the source gas supply source 21 are, for example, all substances that do not contribute to film formation. More specifically, examples of the impurities in the source gas supplied from the source gas supply source 21 include metals such as carbon, iron, or chromium, and other specific particles. For example, when the DLI method is used, carbon contained in the solvent may be included as an impurity. By selectively removing impurities such as metals such as carbon, iron, or chromium, and other specific particles with the filter 251 containing the porous coordination polymer, the purity of the source gas supplied to the processing chamber 10 can be increased.

[0027] [Reaction gas supply unit 30] The reaction gas supply unit 30 supplies the reaction gas to the processing chamber 10. The reaction gas reacts with the raw material gas to form a film-forming gas. For example, when forming a film made of aluminum nitride (AlN) by reacting with aluminum trichloride (AlCl3), ammonia (NH3) gas is used as the reaction gas. Also, for example, when forming a film made of titanium nitride (TiN) by reacting with titanium tetrachloride (TiCl4), ammonia (NH3) gas is also used as the reaction gas.

[0028] The reaction gas supply unit 30 includes a reaction gas supply source 31, a reaction gas supply and cutoff valve 32, and a flow rate adjustment unit 33.

[0029] (Reaction gas supply source 31) The reaction gas supply source 31 supplies the reaction gas to the processing chamber 10. The reaction gas supply source 31 includes, for example, a storage device such as a tank for storing the reaction gas.

[0030] (Reaction gas supply and cutoff valve 32) The reaction gas supply and cutoff valve 32 supplies and stops the reaction gas from the reaction gas supply source 31 to the processing chamber 10. The reaction gas supply and cutoff valve 32 is connected to the control unit 80. And the control unit 80 controls the opening and closing of the reaction gas supply and cutoff valve 32.

[0031] (Flow rate adjustment unit 33) The flow rate adjustment unit 33 controls the flow rate of the reaction gas supplied from the reaction gas supply source 31 to the processing chamber 10. The flow rate adjustment unit 33 is, for example, a mass flow controller.

[0032] [Purge gas supply unit 40] The purge gas supply unit 40 supplies the purge gas to the processing chamber 10. The purge gas is supplied when discharging the raw material gas or the reaction gas inside the processing chamber 10 to the outside. The purge gas is, for example, nitrogen gas.

[0033] The purge gas supply unit 40 includes a purge gas supply source 41, a purge gas supply and cutoff valve 42, and a flow rate adjustment unit 43.

[0034] (Purge gas supply source 41) The purge gas supply source 41 supplies purge gas to the processing chamber 10. The purge gas supply source 41 includes, for example, a storage device such as a tank for storing purge gas.

[0035] (Purge gas supply and cutoff valve 42) The purge gas supply and cutoff valve 42 supplies and stops the supply of purge gas from the purge gas supply source 41 to the processing chamber 10. The purge gas supply and cutoff valve 42 is connected to the control unit 80. And the control unit 80 controls the opening and closing of the purge gas supply and cutoff valve 42.

[0036] (Flow rate adjustment unit 43) The flow rate adjustment unit 43 controls the flow rate of the purge gas supplied from the purge gas supply source 41 to the processing chamber 10. The flow rate adjustment unit 43 is, for example, a mass flow controller.

[0037] [Gas exhaust unit 50] The gas exhaust unit 50 discharges the gas inside the processing chamber 10 to the outside. The gas exhaust unit 50 includes an exhaust valve 51, a pressure adjustment unit 52, an exhaust pump 53, an exhaust gas treatment unit 54, and a filtration unit 55. The path from the processing chamber 10 to the exhaust gas treatment unit 54 is referred to as an exhaust path Le.

[0038] (Exhaust valve 51) The exhaust valve 51 exhausts and stops the exhaust gas from the processing chamber 10 to the exhaust pump 53. The exhaust valve 51 is connected to the control unit 80. And the control unit 80 controls the opening and closing of the exhaust valve 51.

[0039] (Pressure adjustment unit 52) The pressure adjustment unit 52 adjusts the pressure inside the processing chamber 10. The pressure adjustment unit 52 is, for example, an automatic pressure controller (APC: Auto Pressure Controller). By the pressure adjustment unit 52, the pressure inside the processing chamber 10 is adjusted to a desired pressure.

[0040] Exhaust pump 53 The exhaust pump 53 exhausts the gas inside the processing chamber 10. The gas (exhaust gas) exhausted by the exhaust pump 53 includes the source gas, the reaction gas, and the purge gas. Further, the gas (exhaust gas) exhausted by the exhaust pump 53 also includes reaction by-products generated by the reaction of the source gas and the reaction gas.

[0041] The exhaust pump 53 is a vacuum pump such as, for example, a turbomolecular pump, a dry pump, or a combination thereof.

[0042] (Exhaust gas treatment unit 54) The exhaust gas treatment unit 54 adsorbs, washes with water, and chemically neutralizes the exhaust gas exhausted from the exhaust pump 53, and then discharges it to the outside, for example, the atmosphere.

[0043] (Filter unit 55) The filter unit 55 recovers the source gas contained in the exhaust gas. The filter unit 55 is provided in the exhaust path Le. The filter unit 55 includes a filter 551 containing a porous coordination polymer inside. In the filter unit 55, a step of adsorbing the source gas is performed.

[0044] The porous coordination polymer contained in the filter 551 of the filter unit 55 selectively adsorbs the source gas. The porous coordination polymer contained in the filter 551 of the filter unit 55 recovers the source gas by selectively adsorbing the source gas. That is, by using the filter 551 formed of a porous coordination polymer, the precursor contained in the source gas can be selectively adsorbed and recovered.

[0045] The filter 551 is provided so as to be replaceable. The filter 551 adsorbed with the source gas is removed, and a new filter 551 is attached. By extracting the source gas adsorbed from the removed filter 551, the source gas contained in the exhaust gas can be reused.

[0046] In a CVD process or an ALD process for forming a thin film, the proportion of a precursor contained in a source gas, for example, aluminum trichloride, deposited on a substrate is less than several percent. Therefore, the utilization efficiency of the precursor contained in the source gas is extremely low. That is, most of the precursor is discharged from the processing chamber 10. Conventionally, the discharged precursor has been discarded.

[0047] The filter 551 can recover the precursor contained in the exhaust gas and desorb the recovered precursor from the porous coordination polymer by heating or the like. Therefore, the precursor adsorbed by the filter 551 formed of the porous coordination polymer can be taken out again and reused. By reusing, the precursor that was conventionally discarded can be effectively utilized.

[0048] In the above description, the recovery of the source gas, particularly the precursor contained in the source gas, has been described. However, the gas to be recovered is not limited to the source gas. For example, in the gas contained in the exhaust gas, a porous coordination polymer that selectively adsorbs a gas to be reused, such as a reaction gas, a purge gas, etc., may be used to adsorb and recover the gas to be reused. Furthermore, not limited to gases, solids such as reaction by-products may be adsorbed.

[0049] [Control unit 80] The control unit 80 is constituted by a computer including an arithmetic unit and a storage unit. The control unit 80 controls each part of the substrate processing apparatus 1. The arithmetic unit includes, for example, a CPU (Central Processing Unit). The storage unit includes, for example, a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof.

[0050] The memory unit stores a program in which a group of steps (instructions) for executing operations necessary for the film formation process of the wafer W is assembled. The program includes, for example, a group of steps configured to control the opening and closing operations of the raw material gas supply / discharge valve 22, the reaction gas supply / discharge valve 32, the purge gas supply / discharge valve 42, and the discharge valve 51 so that the raw material gas and the reaction gas are alternately supplied to the processing chamber 10. The program is stored in a storage medium such as a hard disk, a compact disk, a magneto-optical disk, a memory card, etc., and is installed from the storage medium into a computer.

[0051] The processing of the control unit 80 will be described, and the process of processing the substrate will be described. First, as preparation before film formation, the substrate is carried into the processing chamber 10, and the control unit 80 adjusts the pressure inside the processing chamber 10 and the temperature of the substrate. Then, the control unit 80 opens the discharge valve 51 and evacuates with the exhaust pump 53 to adjust to the pressure during film formation. Then, the control unit 80 opens the raw material gas supply / discharge valve 22, closes the other valves, and supplies the raw material gas to the processing chamber 10 while adjusting the flow rate by the flow rate adjustment unit 23. Inside the processing chamber 10, the raw material gas is adsorbed on the surface of the substrate.

[0052] Next, the control unit 80 opens the purge gas supply / discharge valve 42 and the discharge valve 51, closes the other valves, supplies the purge gas to the processing chamber 10, and replaces the raw material gas inside the processing chamber 10 with the purge gas.

[0053] Next, the control unit 80 opens the reaction gas supply / discharge valve 32, closes the other valves, and supplies the reaction gas to the processing chamber 10. Inside the processing chamber 10, the raw material gas adsorbed on the wafer surface reacts with the reaction gas to form a thin film, for example, a monolayer. Then, the purge gas supply / discharge valve 42 and the discharge valve 51 are opened, the other valves are closed, the purge gas is supplied to the processing chamber 10, and the reaction gas inside the processing chamber 10 is replaced with the purge gas.

[0054] The control unit 80 controls the raw material gas supply / discharge valve 22, the reaction gas supply / discharge valve 32, the purge gas supply / discharge valve 42, and the discharge valve 51 so as to alternately supply the raw material gas and the reaction gas to the processing chamber 10 in the order of the raw material gas, the purge gas, the reaction gas, and the purge gas. Then, by repeating the supply of the raw material gas and the reaction gas, a film with a desired thickness is formed.

[0055] <The porous coordination polymer used in the filtration unit 25 and the filtration unit 55> The porous coordination polymer contained in the filter 251 of the filtration unit 25 and the filter 551 of the filtration unit 55 will be described. FIGS. 2 and 3 are diagrams for explaining the porous coordination polymer 500 used in an example of the substrate processing apparatus 1 according to the first embodiment.

[0056] The porous coordination polymer is formed by a coordination bond between a metal ion and an organic ligand. The porous coordination polymer has a crystalline polymer structure in which metal ions are linked by a crosslinkable organic ligand and has a space inside. The porous coordination polymer formed by the aggregation of a plurality of metal complexes has a regular bond between metal ions and organic ligands. Since the metal ions and the organic ligands are regularly bonded, for example, as schematically shown in FIGS. 2 and 3, the porous coordination polymer 500 has a structure in which nanometer-sized pores 500s are regularly and three-dimensionally arranged.

[0057] For the porous coordination polymer 500 having a structure in which nanometer-sized pores 500s are regularly and three-dimensionally arranged, as shown by the arrow A, the molecule M to be adsorbed is adsorbed so as to enter into one pore 500s (FIG. 3). The molecule M to be adsorbed is also adsorbed inside the pore 500s. Further, the adsorbed molecule M desorbs from the pore 500s as shown by the arrow D.

[0058] One of the methods for producing a porous coordination polymer is the solution method, which forms a porous coordination polymer by mixing a solution of metal ions and an organic ligand under normal temperature and pressure. The aggregation of metal complexes proceeds self-assembly in the solution. The porous coordination polymer is relatively easy to manufacture, and by selecting metal ions and organic ligands and adjusting the synthesis conditions, the size and shape of the pores 500s can be controlled, so the degree of freedom in design is also high. The pores 500s of the porous coordination polymer 500 are designed according to the molecule M adsorbed on the porous coordination polymer 500.

[0059] The porous coordination polymer contained in the filter 251 or the filter 551 is formed, for example, in the form of pellets, powder, or granules smaller than pellets.

[0060] [Porous coordination polymer used for filter 251] In the filter 251, for example, when removing carbon dioxide contained in the raw material gas as an impurity, it is desirable to use a porous coordination polymer that selectively adsorbs carbon dioxide for the filter 251.

[0061] Examples of the porous coordination polymer that selectively adsorbs carbon dioxide include, for example, those selected from the group of porous coordination polymers described in the following (a) to (b). (a) A porous coordination polymer containing a metal complex formed by a coordination bond between magnesium ions and 2,5-dihydroxyterephthalic acid as a ligand, and having a pore structure formed by the aggregation of a plurality of the metal complexes. (b) A porous coordination polymer containing a metal complex formed by a coordination bond between a zinc cluster ion (Zn40) and 4,4',4"-(benzene-1,3,5-triyl-tris(benzene-4,1-diyl))tribenzoate, and having a pore structure formed by the aggregation of a plurality of the metal complexes.

[0062] [Examples of porous coordination polymers used for filter 551] In the filter 551, for example, when recovering aluminum trichloride (AlCl3) as a source gas in exhaust gas, it is desirable to use a porous coordination polymer that selectively adsorbs aluminum trichloride (AlCl3) for the filter 551.

[0063] Examples of the porous coordination polymer that selectively adsorbs aluminum trichloride (AlCl3) include those selected from the group of porous coordination polymers described in the following (c) to (f). (c) A porous coordination polymer containing a metal complex formed by a coordination bond between a copper ion and 1,3,5-benzenetricarboxylic acid, and having a pore structure formed by the aggregation of a plurality of the metal complexes. (d) A porous coordination polymer containing a metal complex formed by a coordination bond between an iron ion and 1,3,5-benzenetricarboxylic acid, and having a pore structure formed by the aggregation of a plurality of the metal complexes. (e) A porous coordination polymer containing a metal complex formed by a coordination bond between a chromium ion and terephthalic acid, and having a pore structure formed by the aggregation of a plurality of the metal complexes. (f) A porous coordination polymer containing a metal complex formed by a coordination bond between a lanthanum ion and 1,3,5-tris(4-carboxyphenyl)benzene, and having a pore structure formed by the aggregation of a plurality of the metal complexes.

[0064] <Function and Effect> According to the substrate processing apparatus 1 according to the first embodiment, impurities can be selectively removed from the source gas supplied from the source gas supply unit 20 to the processing chamber 10, and the purity of the source gas can be increased.

[0065] For example, when generating a source gas by the DLI method, impurities contained in the solvent may be mixed into the source gas. In addition, metals or particles may be mixed into the source gas.

[0066] The substrate processing apparatus 1 according to the first embodiment can selectively adsorb impurities contained in the source gas by using the filter 251 formed of a porous coordination polymer, thereby enhancing the purity of the source gas.

[0067] ≪Second Embodiment≫ <Substrate Processing Apparatus 2> In the substrate processing apparatus 2 according to the second embodiment, the position of the exhaust pump 53 with respect to the filtration unit 55 is different from that of the substrate processing apparatus 1 according to the first embodiment. In the gas exhaust unit 50 of the substrate processing apparatus 1 according to the first embodiment, the exhaust pump 53 is provided on the side of the processing chamber 10 of the filtration unit 55. On the other hand, in the gas exhaust unit 150 of the substrate processing apparatus 2 according to the second embodiment, the exhaust pump 53 is provided on the side opposite to the processing chamber 10 of the filtration unit 55.

[0068] According to the substrate processing apparatus 2 according to the second embodiment, in addition to the actions and effects of the substrate processing apparatus 1 according to the first embodiment, by capturing the precursor with the filter 551 before the exhaust pump 53, contamination of the exhaust pump 53 by the precursor can be prevented. By preventing contamination of the exhaust pump 53, the operating time of the exhaust pump 53 can be extended. Also, by preventing contamination of the exhaust pump 53, the number of maintenance operations of the substrate processing apparatus 2 can be reduced.

[0069] The present embodiments disclosed this time should be considered to be illustrative in all respects and not restrictive. The above embodiments can be modified and improved in various forms without departing from the scope and gist of the appended claims. The matters described in the above plurality of embodiments can also adopt other configurations and can be combined within a non - conflicting range.

Description of Reference Numerals

[0070] 1, 2 Substrate processing apparatus 10 Processing chamber 20 Source gas supply unit 21 Source gas supply source 22 Source gas on - off valve 23 Flow rate adjustment unit 25 Filtration section 251 Filter 30 Reaction gas supply section 31 Reaction gas supply source 32 Reaction gas supply and cut-off valve 33 Flow rate adjustment section 40 Purge gas supply section 41 Purge gas supply source 42 Purge gas supply and cut-off valve 43 Flow rate adjustment section 50, 150 Gas exhaust section 51 Exhaust valve 52 Pressure adjustment section 53 Exhaust pump 54 Exhaust gas treatment section 55 Filtration section 551 Filter 80 Control section 500 Porous coordination polymer 500s Pores Ls Supply path Le Exhaust path

Claims

1. A processing chamber for processing a substrate, A filtering unit including a porous coordination polymer provided in a supply path for supplying gas to the processing chamber, comprising: The porous coordination polymer adsorbs carbon dioxide, which is an impurity contained in the gas, The porous coordination polymer is (a) a porous coordination polymer including a first metal complex formed by a coordination bond with magnesium ions and 2,5-dihydroxyterephthalic acid as ligands, and having a pore structure formed by aggregation of a plurality of the first metal complexes, or (b) a porous coordination polymer including a second metal complex formed by a coordination bond with zinc cluster ions (Zn4O) and 4,4',4''-(benzene-1,3,5-triyl-tris(benzene-4,1-diyl))tribenzoate, and having a pore structure formed by aggregation of a plurality of the second metal complexes. A substrate processing apparatus.

2. The impurity is a substance that does not contribute to film formation. The substrate processing apparatus according to Claim 1.

3. The gas includes a precursor for forming a film to be laminated on the substrate. The substrate processing apparatus according to any one of Claims 1 or 2.

4. A step of processing a substrate using a source gas in a processing chamber, A step of adsorbing carbon dioxide, which is an impurity contained in the source gas, by a porous coordination polymer provided in a supply path for supplying gas from the processing chamber, including: The porous coordination polymer includes (a) a first metal complex formed by a coordination bond of magnesium ions and 2,5-dihydroxyterephthalic acid as a ligand, and has a pore structure formed by the aggregation of a plurality of the first metal complexes, or (b) a second metal complex formed by a coordination bond of zinc cluster ions (Zn40) and 4,4',4''-(benzene-1,3,5-triyl-tris(benzene-4,1-diyl))tribenzoate, and has a pore structure formed by the aggregation of a plurality of the second metal complexes. Substrate processing method.

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