Semiconductor light-emitting device

Abstract

To electrically connect a semiconductor light-emitting element and an electronic component while reducing parasitic capacitance.SOLUTION: A semiconductor light-emitting device 1B includes a substrate 10B, a common conductive portion 30B formed on the substrate 10B; and an electronic component 100 and a semiconductor light-emitting element 80 mounted on the common conductive portion 30B, and the semiconductor light-emitting element 80 and the electronic component 100 are electrically connected via the common conductive portion 30B. The electronic component 100 is covered with a light-shielding sealing resin 140.SELECTED DRAWING: Figure 14

Description

Technical Field

[0001] The present disclosure relates to a semiconductor light-emitting device.

Background Art

[0002] For example, as shown in Patent Document 1, a semiconductor light-emitting device including a semiconductor light-emitting element as a light source is widely known. The semiconductor light-emitting device described in Patent Document 1 includes a semiconductor light-emitting element and a substrate on which the semiconductor light-emitting element is mounted.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

[0004] [Summary] By the way, when using a semiconductor light-emitting device together with electronic components such as a switching element or a capacitor for driving a semiconductor light-emitting element, the electronic components are arranged separately from the semiconductor light-emitting device, and the semiconductor light-emitting element and the electronic components are electrically connected using wiring or the like. In such a configuration, there is a concern about parasitic capacitance due to wiring or the like.

[0005] A semiconductor light-emitting device according to an aspect of the present disclosure includes a substrate, a common conductive portion formed on the substrate, a semiconductor light-emitting element mounted on the common conductive portion, and an electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, wherein the electronic component is covered with a light-shielding resin material.

Brief Description of the Drawings

[0006]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Figure 17

Figure 18

Figure 19

Figure 20

Figure 21

Figure 22

Figure 23

Figure 24

Figure 25

Figure 26

Figure 27

Figure 28

Figure 29

Figure 30

Figure 31

Figure 32

Figure 33

Figure 34

Figure 35

Figure 36

Figure 37

Figure 38

Figure 39

Figure 40

Figure 41

Figure 42

Figure 43

Figure 44

Figure 45

Figure 46

Figure 47

Figure 48

Figure 49

Figure 50

Figure 51

Figure 52

Figure 53

Figure 54

Figure 55

Figure 56

Figure 57

Figure 58

Figure 59

Figure 60

Figure 61

Figure 62

Figure 63

Figure 64

Figure 65

Figure 66

Figure 67

Figure 68

Figure 69

Figure 70

Figure 71

Figure 72

Figure 73

Figure 74

Figure 75

Figure 76

Figure 77

Figure 78

Figure 79

Figure 80

Figure 81

Figure 82

Figure 83

Figure 84

Figure 85

[0007] [Detailed Description] [First Embodiment] Hereinafter, embodiments of the semiconductor light-emitting device will be described with reference to the drawings. The following embodiments illustrate configurations and methods for embodying the technical idea, and do not limit the materials, shapes, structures, arrangements, dimensions, etc. of each component to those described below. Various modifications can be made to the following embodiments.

[0008] FIG. 1 is a perspective view of the semiconductor light-emitting device 1 according to the first embodiment. FIG. 2 is an exploded perspective view of the semiconductor light-emitting device 1 according to the first embodiment. FIG. 3 is a front view of the semiconductor light-emitting device 1 according to the first embodiment. In FIG. 3, the area below the lid 22 is shown by a solid line.

[0009] As shown in FIG. 1, the semiconductor light-emitting device 1 has, for example, a rectangular parallelepiped shape. In a plan view of the semiconductor light-emitting device 1, the direction along one side is defined as the X direction, and the direction orthogonal to the X direction is defined as the Y direction. In the present embodiment, the size of the semiconductor light-emitting device 1 in the X direction is about 3.5 mm, and the size of the semiconductor light-emitting device 1 in the Y direction is about 3.5 mm. Note that the size of the semiconductor light-emitting device 1 in the X direction and the size in the Y direction can be arbitrarily changed, respectively.

[0010] As shown in FIGS. 1 to 3, the semiconductor light-emitting device 1 includes a substrate 10, a case 20, a plurality of conductive parts 30, 40, 50, 60, 70, a semiconductor light-emitting element 80, and an electronic component 100.

[0011] The substrate 10 is, for example, a square extending in the X direction and the Y direction. The X direction and the Y direction are two mutually orthogonal directions in the plane direction of the substrate 10. The substrate 10 has a substrate front surface 11 and a substrate back surface 12.

[0012] In the present embodiment, the substrate 10 is made of an insulating material. The substrate 10 may be, for example, ceramics such as alumina or aluminum nitride, a silicon substrate, or glass epoxy or the like. For the sake of convenience of explanation, the direction away from the substrate front surface 11 in the thickness direction of the substrate 10 is referred to as "upward", and the direction approaching the substrate front surface 11 is referred to as "downward".

[0013] The case 20 houses the semiconductor light-emitting element 80 and the electronic component 100. The case 20 is attached to the substrate 10. The inside of the case 20 is, for example, hollow. However, the present invention is not limited to this, and the inside of the case 20 may be filled with some member.

[0014] The case 20 has a frame 21 that is open upward and a lid 22 that closes the opening of the frame 21. The frame 21 is made of, for example, a light-shielding material, such as a colored resin. The light from the semiconductor light-emitting element 80 is blocked by the frame 21. The frame 21 has a square shape that is slightly smaller than the substrate 10. As shown in FIG. 2, the frame 21 has a first side wall portion 21a and a second side wall portion 21b that are both side wall portions in the Y direction, and a third side wall portion 21c and a fourth side wall portion 21d that are both side wall portions in the X direction. The first side wall portion 21a and the second side wall portion 21b are arranged to face each other in the Y direction, and the third side wall portion 21c and the fourth side wall portion 21d are arranged to face each other in the X direction.

[0015] The lid 22 has a plate shape that is slightly smaller than the outer edge of the frame 21. The lid 22 is made of a transparent material and is formed of, for example, glass. The lid 22 transmits the light from the semiconductor light-emitting element 80.

[0016] As shown in FIGS. 2 and 3, a plurality of conductive portions 30, 40, 50, 60, 70 are formed on the substrate 10. The plurality of conductive portions 30, 40, 50, 60, 70 are made of a conductive material, and for example, Cu, Ni, Ti, Au, etc. are appropriately selected. Further, a surface layer made of Sn may be provided on the plurality of conductive portions 30, 40, 50, 60, 70.

[0017] The plurality of conductive portions 30, 40, 50, 60, 70 include, for example, a surface conductive layer formed on the substrate surface 11, a back surface conductive layer formed on the substrate back surface 12, and a connecting portion that electrically connects the surface conductive layer and the back surface conductive layer.

[0018] As shown in FIGS. 3 to 5, among the plurality of conductive parts 30, 40, 50, 60, 70, the common conductive part 30 includes a common surface conductive layer 31 formed on the substrate surface 11, a common back surface conductive layer 32 formed on the substrate back surface 12, and a common connection part 33 that electrically connects the common surface conductive layer 31 and the common back surface conductive layer 32. The common conductive part 30 has a common contact surface 30a on the substrate surface 11 and a common contact back surface 30b on the substrate back surface 12. In the present embodiment, the common contact surface 30a is the surface of the common surface conductive layer 31, and the common contact back surface 30b is the back surface of the common back surface conductive layer 32.

[0019] The common contact surface 30a is disposed closer to the central part in the X direction than the third side wall part 21c and the fourth side wall part 21d on the substrate surface 11, and in the present embodiment, it is disposed at the central part in the X direction on the substrate surface 11. The common contact surface 30a extends in the Y direction. The common contact surface 30a has a rectangular shape with the Y direction as the longitudinal direction and the X direction as the short side direction. The common contact surface 30a is formed up to a position overlapping the frame 21, and both ends of the common contact surface 30a in the Y direction coincide with the outer surfaces of the first side wall part 21a and the second side wall part 21b when viewed from above.

[0020] The connection conductive part 40 and the control conductive part 70 are disposed on one side in the X direction with respect to the common contact surface 30a, and the element conductive part 50 and the drive conductive part 60 are disposed on the other side in the X direction with respect to the common contact surface 30a.

[0021] The connection conductive part 40 includes a connection surface conductive layer 41 formed on the substrate surface 11, a connection back surface conductive layer 42 formed on the substrate back surface 12, and a connection contact part 43 that electrically connects the connection surface conductive layer 41 and the connection back surface conductive layer 42.

[0022] The connection surface conductive layer 41 is a portion that protrudes in the X direction from the end 31a on the opposite side of the element conductive portion 50 side among both ends of the common surface conductive layer 31 in the X direction. The connection surface conductive layer 41 and the common surface conductive layer 31 are integrally formed. Therefore, the connection conductive portion 40 is electrically connected to the common conductive portion 30.

[0023] The connection conductive portion 40 has a connection contact surface 40a on the substrate surface 11 and a connection contact back surface 40b on the substrate back surface 12. In the present embodiment, the connection contact surface 40a is the surface of the connection surface conductive layer 41, and is a portion that protrudes in the X direction from the end on the opposite side of the element conductive portion 50 side among both ends of the common contact surface 30a in the X direction. The connection contact surface 40a is continuous with the common contact surface 30a. The connection contact back surface 40b is the back surface of the connection back surface conductive layer 42.

[0024] The element conductive portion 50 includes an element surface conductive layer 51 formed on the substrate surface 11, an element back surface conductive layer 52 formed on the substrate back surface 12, and an element connection portion 53 that electrically connects the element surface conductive layer 51 and the element back surface conductive layer 52. The element conductive portion 50 has an element contact surface 50a on the substrate surface 11 and an element contact back surface 50b on the substrate back surface 12. In the present embodiment, the element contact surface 50a is the surface of the element surface conductive layer 51, and the element contact back surface 50b is the back surface of the element back surface conductive layer 52.

[0025] As shown in FIGS. 3, 4, and 6, the drive conductive portion 60 includes a drive surface conductive layer 61 formed on the substrate surface 11, a drive back surface conductive layer 62 formed on the substrate back surface 12, and a drive connection portion 63 that electrically drives the drive surface conductive layer 61 and the drive back surface conductive layer 62. The drive conductive portion 60 has a drive contact surface 60a on the substrate surface 11 and a drive contact back surface 60b on the substrate back surface 12. In the present embodiment, the drive contact surface 60a is the surface of the drive surface conductive layer 61, and the drive contact back surface 60b is the back surface of the drive back surface conductive layer 62.

[0026] The control conductive part 70 includes a control surface conductive layer 71 formed on the substrate surface 11, a control back surface conductive layer 72 formed on the back surface 12 of the substrate, and a control connection part 73 that electrically controls the control surface conductive layer 71 and the control back surface conductive layer 72. The control conductive part 70 has a control contact surface 70a on the substrate surface 11 and a control contact back surface 70b on the back surface 12 of the substrate. In the present embodiment, the control contact surface 70a is the surface of the control surface conductive layer 71, and the control contact back surface 70b is the back surface of the control back surface conductive layer 72.

[0027] The semiconductor light-emitting element 80 is a light source in the semiconductor light-emitting device 1 and emits light in a predetermined wavelength band. The specific configuration of the semiconductor light-emitting element 80 is not particularly limited, and it may be a semiconductor laser element, an LED element, or the like. In the present embodiment, the semiconductor light-emitting element 80 is a semiconductor laser element, and in particular, a VCSEL element is adopted. The light from the semiconductor light-emitting element 80 passes through the lid 22 and is emitted to the outside.

[0028] As shown in FIGS. 7 and 8, the semiconductor light-emitting element 80 of this example includes an element substrate 81, a first semiconductor layer 82, an active layer 83, a second semiconductor layer 84, a current constriction layer 85, an insulating layer 86, and a conductive layer 87, and a plurality of light-emitting regions 90 are formed. FIG. 8 shows an enlarged view of a portion including one light-emitting region 90.

[0029] The element substrate 81 is made of a semiconductor. The semiconductor constituting the element substrate 81 is, for example, GaAs. The semiconductor constituting the element substrate 81 may be other than GaAs. The active layer 83 is composed of a compound semiconductor that emits light having a wavelength in the 980 nm band (hereinafter referred to as “λa”), for example, by spontaneous emission and stimulated emission. The active layer 83 is located between the first semiconductor layer 82 and the second semiconductor layer 84. In the present embodiment, it is constituted by a multiple quantum well structure in which an undoped GaAs well layer and an undoped AlGaAs barrier layer (barrier layer) are alternately laminated. For example, an undoped Al 0.35 Ga 0.65 As barrier layer and an undoped GaAs well layer are alternately repeated 2 to 6 cycles.

[0030] The first semiconductor layer 82 is typically a DBR (Distributed Bragg Reflector) layer and is formed on the element substrate 81. The first semiconductor layer 82 is made of a semiconductor having a first conductivity type. In this example, the first conductivity type is n-type. The first semiconductor layer 82 is configured as a DBR for efficiently reflecting the light emitted from the active layer 83. More specifically, the active layer 83 is composed of a pair of two AlGaAs layers each having a thickness of λa / 4 and different reflectivities, and a plurality of such pairs are stacked. More specifically, the first semiconductor layer 82 has, for example, a relatively low Al composition n-type Al 0.16 Ga 0.84 As layer (low Al composition layer) and, for example, a relatively high Al composition n-type Al 0.84 Ga 0.16 As layer (high Al composition layer), which are alternately stacked in a plurality of cycles (for example, 20 cycles). The n-type Al 0.16 Ga 0.84 As layer and the n-type Al 0.84 Ga 0.16 As layer are each doped with an n-type impurity (for example, Si) at a concentration of, for example, 2×10 17 cm -3 ~3×10 18 cm -3 and 2×10 17 cm -3 ~3×10 18 cm -3 respectively.

[0031] The second semiconductor layer 84 is typically a DBR layer and is made of a semiconductor having a second conductivity type. In this example, the second conductivity type is p-type. Different from this embodiment, the first conductivity type may be p-type and the second conductivity type may be n-type. A first semiconductor layer 82 is positioned between the second semiconductor layer 84 and the element substrate 81. The second semiconductor layer 84 is configured as a DBR for efficiently reflecting light emitted from the active layer 83. More specifically, the second semiconductor layer 84 is formed by stacking a plurality of pairs of two AlGaAs layers each having a thickness of λa / 4 and different reflectivities. The second semiconductor layer 84 is, for example, a p-type Al 0.16 Ga 0.84 As layer (low Al composition layer) and a p-type Al 0.84 Ga 0.16 As layer (high Al composition layer) are alternately stacked in a plurality of cycles (for example, 20 cycles).

[0032] The current confinement layer 85 is positioned within the second semiconductor layer 84. The current confinement layer 85 is made of, for example, a layer containing a large amount of Al and being easy to oxidize. The current confinement layer 85 is formed by oxidizing this layer that is easy to oxidize. The current confinement layer 85 does not necessarily have to be formed by oxidation and may be formed by other methods (for example, ion implantation). An opening 85a is formed in the current confinement layer 85. Current flows through the opening 85a.

[0033] The insulating layer 86 is formed on the second semiconductor layer 84. The insulating layer 86 is made of, for example, SiO2. An opening 86a is formed in the insulating layer 86. The conductive layer 87 is formed on the insulating layer 86. The conductive layer 87 is made of a conductive material (for example, metal). The conductive layer 87 is electrically connected to the second semiconductor layer 84 through the opening 86a of the insulating layer 86. The conductive layer 87 has an opening 87a.

[0034] The light-emitting region 90 is a region where light from the active layer 83 is emitted directly or after reflection. In this example, the light-emitting region 90 has an annular shape in plan view, but its shape is not particularly limited. The light-emitting region 90 is provided by laminating the above-described second semiconductor layer 84, current constriction layer 85, insulating layer 86, and conductive layer 87, and forming openings 85a in the current constriction layer 85, openings 86a in the insulating layer 86, openings 87a in the conductive layer 87, and the like. In the light-emitting region 90, light from the active layer 83 is emitted through the opening 87a of the conductive layer 87.

[0035] As shown in FIGS. 3 and 5, the semiconductor light-emitting element 80 has an element upper surface 80a on which a plurality of light-emitting regions 90 and an element upper surface electrode 91 are formed, and an element lower surface 80b on which an element lower surface electrode 92 is formed. The element upper surface 80a is, for example, a rectangle having the X direction as the longitudinal direction and the Y direction as the short-side direction. The element upper surface electrode 91 is formed at an end portion in the X direction on the element upper surface 80a. The element upper surface electrode 91 is disposed closer to the fourth side wall portion 21d than the third side wall portion 21c. The element upper surface electrode 91 has an elongated shape with the Y direction as the longitudinal direction. The element upper surface electrode 91 is made of, for example, metal and is electrically connected to the second semiconductor layer 84. The element lower surface electrode 92 is formed, for example, over the entire element lower surface 80b and is made of, for example, metal. In the present embodiment in which the semiconductor light-emitting element 80 is a VCSEL element, the element upper surface electrode 91 is an anode electrode and the element lower surface electrode 92 is a cathode electrode.

[0036] The electronic component 100 is used, for example, to drive the semiconductor light-emitting element 80. The electronic component 100 is, for example, a switching element, and is an n-type MOSFET in the present embodiment.

[0037] As shown in FIGS. 3 and 6, the electronic component 100 has an upper surface 100a on which a first drive electrode 101 and a control electrode 102 are formed, and a lower surface 100b on which a second drive electrode 103 is formed. In the present embodiment in which the electronic component 100 is a MOSFET, the first drive electrode 101 is a source electrode, the second drive electrode 103 is a drain electrode, and the control electrode 102 is a gate electrode.

[0038] As shown in FIG. 3, the upper surface 100a of the electronic component 100 is rectangular, and a control electrode 102 is formed at the lower left when viewed from above, and the other portion is the first drive electrode 101. The area of the first drive electrode 101 is larger than that of the control electrode 102. The lower surface 100b is, for example, rectangular. The second drive electrode 103 is formed, for example, on the entire back surface of the electronic component 100 and is made of, for example, metal.

[0039] Hereinafter, the positional relationship among the plurality of conductive parts 30, 40, 50, 60, 70, the semiconductor light-emitting element 80, and the electronic component 100 will be described in detail. First, the layout on the substrate surface 11 side will be described with reference to FIG. 3.

[0040] The semiconductor light-emitting element 80 and the electronic component 100 are mounted on the common conductive part 30 and are electrically connected via the common conductive part 30. In the present embodiment, the semiconductor light-emitting element 80 and the electronic component 100 are arranged on a common contact surface 30a formed on the surface of the common surface conductive layer 31 and are electrically connected via the common surface conductive layer 31.

[0041] Specifically, the common contact surface 30a extends in the Y direction, and the semiconductor light-emitting element 80 and the electronic component 100 are arranged in the Y direction on the common contact surface 30a. That is, in the present embodiment, the common contact surface 30a extends in the arrangement direction of the semiconductor light-emitting element 80 and the electronic component 100. The Y direction corresponds to the arrangement direction or the first direction, and the X direction corresponds to the second direction.

[0042] The semiconductor light-emitting element 80 is disposed closer to the first side wall portion 21a than the electronic component 100, and the electronic component 100 is disposed closer to the second side wall portion 21b than the semiconductor light-emitting element 80. The semiconductor light-emitting element 80 and the electronic component 100 are disposed at positions shifted with respect to the central portion in the Y direction on the substrate surface 11, for example, disposed on both sides in the Y direction with respect to the central portion. In the illustrated example, the semiconductor light-emitting element 80 is disposed between the central portion in the Y direction of the substrate surface 11 and the first side wall portion 21a on the common contact surface 30a, and in this example, it is disposed closer to the central portion in the Y direction of the substrate surface 11 than the first side wall portion 21a. The electronic component 100 is disposed between the central portion in the Y direction of the substrate surface 11 and the second side wall portion 21b, and in this example, it is disposed closer to the central portion in the Y direction of the substrate surface 11 than the second side wall portion 21b. For this reason, the semiconductor light-emitting element 80 and the electronic component 100 are disposed on both sides in the Y direction with respect to the central portion in the Y direction on the substrate surface 11, while the distance between the two in the Y direction is short.

[0043] As shown in FIG. 5, the element lower surface electrode 92 formed on the element lower surface 80b of the semiconductor light-emitting element 80 is die-bonded to the common contact surface 30a by a conductive bonding material P1 such as a paste containing a metal such as Ag or solder. Thereby, the element lower surface electrode 92 is joined to the common conductive portion 30.

[0044] As shown in FIG. 6, the second drive electrode 103 formed on the lower surface 100b of the electronic component 100 is die-bonded to the common contact surface 30a by a conductive bonding material P2 such as a paste containing a metal such as Ag or solder. Thereby, the second drive electrode 103 is joined to the common conductive portion 30. The common conductive portion 30 electrically connects the element lower surface electrode 92 and the second drive electrode 103.

[0045] As shown in FIG. 3, an element conductive portion 50 is disposed on one side in the X direction with respect to the common contact surface 30a on the substrate surface 11, and a connection conductive portion 40 is disposed on the other side. In the present embodiment, the connection contact surface 40a and the element contact surface 50a are dispersedly arranged on both sides in the X direction of the semiconductor light-emitting element 80. The connection conductive portion 40 is disposed on the side of the third side wall portion 21c with respect to the semiconductor light-emitting element 80, and the connection contact surface 40a is in the upper left portion of the substrate surface 11. On the other hand, the element conductive portion 50 is disposed on the side of the fourth side wall portion 21d with respect to the semiconductor light-emitting element 80, and the element contact surface 50a is in the upper right portion of the substrate surface 11. The connection contact surface 40a, the element upper surface 80a, and the element contact surface 50a are arranged in the X direction.

[0046] The connection contact surface 40a has, for example, a rectangular shape with the Y direction as the longitudinal direction and the X direction as the short-side direction. The connection contact surface 40a is also formed at a position overlapping the frame 21 in plan view. One end in the longitudinal direction of the connection contact surface 40a coincides with the outer surface of the first side wall portion 21a when viewed from above. One end in the short-side direction of the connection contact surface 40a coincides with the outer surface of the third side wall portion 21c when viewed from above.

[0047] The element contact surface 50a has, for example, a rectangular shape with the Y direction as the longitudinal direction and the X direction as the short-side direction. The element contact surface 50a is also formed at a position overlapping the frame 21 in plan view. One end in the longitudinal direction of the element contact surface 50a coincides with the outer surface of the first side wall portion 21a when viewed from above. One end in the short-side direction of the element contact surface 50a coincides with the outer surface of the fourth side wall portion 21d when viewed from above.

[0048] The element contact surface 50a is electrically connected to the upper element electrode 91 by the wire W1. The wire W1 is made of a metal such as Au, for example, and is bonded to the upper element electrode 91 and the element contact surface 50a, respectively. The number of the wires W1 is not particularly limited, and in the illustrated example, a plurality of wires W1 (five wires W1) are provided. Also, in the illustrated example, the first bonding portion of the wire W1 is provided on the upper element electrode 91, and the second bonding portion is provided on the element contact surface 50a.

[0049] In the illustrated example, the upper element electrode 91 is formed at the end of the upper surface 80a of the element closer to the element conductive portion 50 among the both ends in the X direction. Therefore, the length of the wire W1 can be shortened.

[0050] The drive conductive portion 60 and the control conductive portion 70 are dispersedly arranged on both sides in the X direction with respect to the common contact surface 30a. The drive contact surface 60a and the control contact surface 70a are arranged on both sides in the Y direction of the electronic component 100. In the illustrated example, the drive conductive portion 60 is arranged on the side of the fourth side wall portion 21d with respect to the electronic component 100, and the drive contact surface 60a is at the lower right portion of the substrate surface 11. The control conductive portion 70 is arranged on the side of the third side wall portion 21c with respect to the electronic component 100, and the control contact surface 70a is at the lower left portion of the substrate surface 11. The control contact surface 70a, the upper surface 100a of the electronic component 100, and the drive contact surface 60a are arranged in the X direction.

[0051] The element conductive portion 50 and the drive conductive portion 60 are arranged on the same direction side among both sides in the Y direction with respect to the common contact surface 30a. In other words, the element contact surface 50a is arranged on the side of the drive contact surface 60a among both sides in the X direction with respect to the common contact surface 30a.

[0052] The drive contact surface 60a is, for example, rectangular with the Y direction as the longitudinal direction and the X direction as the short side direction. The drive contact surface 60a is also formed at a position overlapping the frame 21. One end in the longitudinal direction of the drive contact surface 60a coincides with the outer surface of the second side wall portion 21b when viewed from above. One end in the short side direction of the drive contact surface 60a coincides with the outer surface of the fourth side wall portion 21d when viewed from above.

[0053] The drive contact surface 60a is connected to the first drive electrode 101 by the wire W2. Thereby, the drive conductive portion 60 and the first drive electrode 101 are electrically connected. The wire W2 is made of a metal such as Cu, for example, and is bonded to the drive contact surface 60a and the first drive electrode 101, respectively. The number of the wires W2 is not particularly limited, and in the illustrated example, a plurality of wires W2 (five wires W2) are provided. Also, in the illustrated example, the first bonding portion of the wire W2 is provided on the first drive electrode 101, and the second bonding portion is provided on the drive contact surface 60a.

[0054] In the illustrated example, the number of the wires W1 is the same as the number of the wires W2. However, it is not limited thereto, and the number of the wires W1 may be different from the number of the wires W2. For example, the number of the wires W1 may be larger than the number of the wires W2. Thereby, a larger current can flow through the semiconductor light emitting element 80 than through the electronic component 100.

[0055] The control contact surface 70a is, for example, rectangular with the Y direction as the longitudinal direction and the X direction as the short side direction. The control contact surface 70a is also formed at a position overlapping the frame 21. One end in the longitudinal direction of the control contact surface 70a coincides with the outer surface of the second side wall portion 21b when viewed from above. One end surface in the short side direction of the control contact surface 70a coincides with the outer surface of the third side wall portion 21c.

[0056] The control contact surface 70a is connected to the control electrode 102 by the wire W3. Thereby, the control conductive part 70 and the control electrode 102 are electrically connected. The wire W3 is made of a metal such as Cu, for example, and is bonded to the control contact surface 70a and the control electrode 102, respectively. The number of the wires W3 is not particularly limited, and is one in the illustrated example. Also, in the illustrated example, the first bonding part of the wire W3 is provided on the control electrode 102, and the second bonding part is provided on the control contact surface 70a. The control electrode 102 is formed at the end of the upper surface 100a in the X direction that is closer to the control contact surface 70a among both ends. Therefore, the length of the wire W3 can be shortened.

[0057] In the illustrated example, the common contact surface 30a is larger than the other contact surfaces 40a, 50a, 60a, and 70a. The element contact surface 50a is larger than the drive contact surface 60a and the control contact surface 70a. The connection contact surface 40a is larger than the drive contact surface 60a and the control contact surface 70a, and is larger than the element contact surface 50a. The drive contact surface 60a and the control contact surface 70a are of the same size.

[0058] Next, the layout on the back surface 12 side of the substrate will be described with reference to FIGS. 4 to 6. As shown in FIG. 4, the common contact back surface 30b (common back surface conductive layer 32) is formed at the center of the substrate back surface 12. The common contact back surface 30b is formed at a position opposite to the common contact surface 30a. The common contact back surface 30b has a rectangular shape with the X direction as the short side direction and the Y direction as the long side direction, similar to the common contact surface 30a. The common contact back surface 30b is formed smaller than the common contact surface 30a when viewed from above. The length of the common contact back surface 30b in the X direction is shorter than the length of the common contact surface 30a in the X direction. Both ends of the common contact back surface 30b in the X direction are closer to the center side than both ends of the common contact surface 30a in the X direction.

[0059] The element contact back surface 50b and the drive contact back surface 60b are arranged on one side in the X direction with respect to the common contact back surface 30b, and the connection contact back surface 40b and the control contact back surface 70b are arranged on the other side.

[0060] The connection contact back surface 40b (connection back surface conductive layer 42) is formed at a position on the substrate back surface 12 opposite to the connection contact surface 40a. As shown in FIG. 4, the connection contact back surface 40b is formed in the upper right portion of the substrate back surface 12. The connection contact back surface 40b has a rectangular shape with the X direction as the short side direction and the Y direction as the long side direction. The connection contact back surface 40b is formed smaller than the connection contact surface 40a. The connection contact back surface 40b is separated from the common contact back surface 30b, and the two are not connected.

[0061] As shown in FIG. 5, when viewed from above (the substrate surface 11 side), the left end of the connection contact back surface 40b is closer to the center side of the substrate 10 than the left end of the connection contact surface 40a. The left end of the connection contact back surface 40b and the left end of the connection contact surface 40a are the ends on the edge side of the substrate 10 among the two ends in the X direction of the connection contact back surface 40b and the connection contact surface 40a.

[0062] As shown in FIG. 4, the element contact back surface 50b (element back surface conductive layer 52) is formed at a position on the substrate back surface 12 opposite to the element contact surface 50a. In the illustrated example, the element contact back surface 50b is formed in the upper left portion of the substrate back surface 12. The element contact back surface 50b is separated from the common contact back surface 30b, and the two are not connected.

[0063] The element contact back surface 50b has a rectangular shape with the X direction as the short side direction and the Y direction as the long side direction. The element contact back surface 50b is formed smaller than the element contact surface 50a.

[0064] As shown in FIG. 5, when viewed from above, the left end of the back surface 50b of the element contact coincides with the left end of the front surface 50a of the element contact, and the right end of the back surface 50b of the element contact is closer to the center side than the right end of the front surface 50a of the element contact. The left end of the back surface 50b of the element contact and the left end of the front surface 50a of the element contact are the ends on the center side of the substrate 10 among the two ends in the X direction of the back surface 50b of the element contact and the front surface 50a of the element contact. The right end of the back surface 50b of the element contact and the right end of the front surface 50a of the element contact are the ends on the edge side of the substrate 10 among the two ends in the X direction of the back surface 50b of the element contact and the front surface 50a of the element contact.

[0065] As shown in FIG. 4, the back surface 60b of the drive contact (drive back conductive layer 62) is formed at a position on the back surface 12 of the substrate opposite to the front surface 60a of the drive contact. In the illustrated example, the back surface 60b of the drive contact is formed in the lower left portion of the back surface 12 of the substrate. The back surface 60b of the drive contact has a rectangular shape with the X direction as the short side direction and the Y direction as the long side direction.

[0066] The back surface 60b of the drive contact is spaced apart from the common contact back surface 30b in the X direction. The back surface 50b of the element contact and the back surface 60b of the drive contact are arranged spaced apart in the Y direction. The length of the back surface 60b of the drive contact in the Y direction is shorter than the length of the back surface 50b of the element contact in the Y direction. And the distance Y2 between the back surface 50b of the element contact and the back surface 60b of the drive contact is longer than the distance Y1 (FIG. 3) between the front surface 50a of the element contact and the front surface 60a of the drive contact.

[0067] As shown in FIG. 6, when viewed from above, the left end of the back surface 60b of the drive contact coincides with the left end of the front surface 60a of the drive contact, and the right end of the back surface 60b of the drive contact is closer to the center side than the right end of the front surface 60a of the drive contact. The left end of the back surface 60b of the drive contact and the left end of the front surface 60a of the drive contact are the ends on the center side of the substrate 10 among both ends in the X direction of the back surface 60b of the drive contact and the front surface 60a of the drive contact. The right end of the back surface 60b of the drive contact and the right end of the front surface 60a of the drive contact are the ends on the edge side of the substrate 10 among both ends in the X direction of the back surface 60b of the drive contact and the front surface 60a of the drive contact.

[0068] As shown in FIG. 4, the back surface 70b of the control contact is formed at a position on the substrate back surface 12 opposite to the front surface 70a of the control contact. In the illustrated example, the back surface 70b of the control contact is formed in the lower right portion of the substrate back surface 12. The back surface 70b of the control contact has a rectangular shape with the X direction as the short side direction and the Y direction as the long side direction. The back surface 70b of the control contact is formed smaller than the front surface 70a of the control contact.

[0069] The back surface 70b of the control contact is arranged at a distance in the X direction from the common contact back surface 30b. The back surface 40b of the connection contact and the back surface 70b of the control contact are arranged at a distance in the Y direction. The length of the back surface 70b of the control contact in the Y direction is shorter than the length of the back surface 40b of the connection contact in the Y direction. And the distance Y4 between the back surface 40b of the connection contact and the back surface 70b of the control contact is longer than the distance Y3 (FIG. 3) between the front surface 40a of the connection contact and the front surface 70a of the control contact.

[0070] As shown in FIG. 6, when viewed from above, the right end of the back surface 70b of the control contact coincides with the right end of the front surface 70a of the control contact, and the left end of the back surface 70b of the control contact is closer to the center side than the left end of the front surface 70a of the control contact. The right end of the back surface 70b of the control contact and the right end of the front surface 70a of the control contact are the ends on the center side of the substrate 10 among the two ends in the X direction of the back surface 70b of the control contact and the front surface 70a of the control contact. The left end of the back surface 70b of the control contact and the left end of the front surface 70a of the control contact are the ends on the edge side of the substrate 10 among the two ends in the X direction of the back surface 70b of the control contact and the front surface 70a of the control contact.

[0071] In the present embodiment, the common contact back surface 30b is larger than the connection contact back surface 40b, the element contact back surface 50b, the drive contact back surface 60b, and the control contact back surface 70b. The element contact back surface 50b and the connection contact back surface 40b are larger than the drive contact back surface 60b and the control contact back surface 70b. The drive contact back surface 60b and the control contact back surface 70b have the same shape.

[0072] Next, the connection portions 33, 43, 53, 63, 73 will be described. The plurality of connection portions 33, 43, 53, 63, 73 constitute a conductive path in the thickness direction of the substrate 10. In the present embodiment, the plurality of connection portions 33, 43, 53, 63, 73 penetrate the substrate 10 in the thickness direction.

[0073] As shown in FIGS. 3 and 4, the common connection portion 33 is disposed between the common surface conductive layer 31 and the common back surface conductive layer 32. The common connection portion 33 is connected to the common surface conductive layer 31 and the common back surface conductive layer 32 and conducts them.

[0074] As shown in FIG. 3, when viewed from above, the common connection portion 33 is formed at a position that does not overlap with the semiconductor light-emitting element 80 and the electronic component 100. For example, the common connection portion 33 is disposed between the semiconductor light-emitting element 80 and the electronic component 100. Specifically, the common connection portion 33 is disposed at the center of the substrate surface 11.

[0075] As shown in FIG. 5, the connection contact portion 43 is disposed between the connection front surface conductive layer 41 and the connection back surface conductive layer 42. The connection contact portion 43 is connected to the connection front surface conductive layer 41 and the connection back surface conductive layer 42, and electrically connects them.

[0076] As shown in FIG. 3, the connection contact portion 43 is formed at a position overlapping the case 20 when viewed from above. For example, the connection contact portion 43 is formed at a position overlapping the third side wall portion 21c when viewed from above.

[0077] As shown in FIG. 5, the element contact portion 53 is disposed between the element front surface conductive layer 51 and the element back surface conductive layer 52. The element contact portion 53 is connected to the element front surface conductive layer 51 and the element back surface conductive layer 52, and electrically connects them.

[0078] As shown in FIG. 3, the element contact portion 53 is formed at a position overlapping the case 20 when viewed from above. For example, the element contact portion 53 is formed at a position overlapping the fourth side wall portion 21d when viewed from above.

[0079] As shown in FIG. 6, the drive contact portion 63 is disposed between the drive front surface conductive layer 61 and the drive back surface conductive layer 62. The drive contact portion 63 is connected to the drive front surface conductive layer 61 and the drive back surface conductive layer 62, and electrically connects them.

[0080] As shown in FIG. 3, the drive contact portion 63 is formed at a position overlapping the case 20 when viewed from above. For example, the drive contact portion 63 is formed at a position overlapping the fourth side wall portion 21d when viewed from above.

[0081] As shown in FIG. 6, the control contact portion 73 is disposed between the control front surface conductive layer 71 and the control back surface conductive layer 72. The control contact portion 73 is connected to the control front surface conductive layer 71 and the control back surface conductive layer 72, and electrically connects them.

[0082] As shown in FIG. 3, the control communication unit 73 is formed at a position overlapping with the case 20 when viewed from above. For example, the control communication unit 73 is formed at a position overlapping with the third side wall portion 21c when viewed from above.

[0083] FIGS. 9 and 10 are a plan view and a circuit diagram showing an example of an electronic device 2 using the semiconductor light-emitting device 1. Examples of the electronic device 2 include a sensor for measuring distance. The electronic device 2 includes the semiconductor light-emitting device 1, a circuit board 110 on which the semiconductor light-emitting device 1 is mounted, and wiring patterns 111 to 114 formed on the circuit board 110.

[0084] The plurality of wiring patterns 111 to 114 are arranged spaced apart from each other. The first wiring pattern 111 and the second wiring pattern 112 are arranged in the X direction, and the third wiring pattern 113 and the fourth wiring pattern 114 are arranged in the X direction. The first wiring pattern 111 and the fourth wiring pattern 114 are arranged in the Y direction, and the second wiring pattern 112 and the third wiring pattern 113 are arranged in the Y direction.

[0085] The connection back surface conductive layer 42 is arranged at a position overlapping with the first wiring pattern 111. The connection contact back surface 40b and the first wiring pattern 111 are joined by solder or the like. Thereby, the first wiring pattern 111 is electrically connected to the element lower surface electrode 92 of the semiconductor light-emitting element 80 and the second drive electrode 103 of the electronic component 100.

[0086] The element back surface conductive layer 52 is arranged at a position overlapping with the second wiring pattern 112. The element contact back surface 50b and the second wiring pattern 112 are joined by solder or the like. Thereby, the second wiring pattern 112 is electrically connected to the element upper surface electrode 91 which is the anode electrode in the present embodiment.

[0087] The drive back conductive layer 62 is disposed at a position overlapping with the third wiring pattern 113. The drive contact back surface 60b and the third wiring pattern 113 are joined by solder or the like. Thereby, the third wiring pattern 113 is electrically connected to the first drive electrode 101 which is a source electrode in the present embodiment.

[0088] The control back conductive layer 72 is disposed at a position overlapping with the fourth wiring pattern 114. The control contact back surface 70b and the fourth wiring pattern 114 are joined by solder or the like. Thereby, the fourth wiring pattern 114 is electrically connected to the control electrode 102.

[0089] As described above, in the present embodiment, the plurality of contact back surfaces 40b, 50b, 60b, 70b constitute the external terminals of the semiconductor light emitting device 1. In the illustrated example, the common back conductive layer 32 (common contact back surface 30b) is mounted on the heat dissipation pattern 115 formed on the circuit board 110 by solder or the like. The heat of the semiconductor light emitting element 80 and the electronic component 100 is transmitted from the common contact back surface 30b to the circuit board 110. Thereby, the heat dissipation performance of the semiconductor light emitting device 1 can be improved.

[0090] As shown in FIG. 9, the electronic device 2 has a capacitor 120. The capacitor 120 is disposed so as to straddle between the second wiring pattern 112 and the third wiring pattern 113, and is electrically connected to the second wiring pattern 112 and the third wiring pattern 113. Thereby, as shown in FIG. 10, the capacitor 120 is connected in parallel to the semiconductor light emitting element 80 and the electronic component 100 connected in series. Therefore, the layout of the wiring pattern for connecting the capacitor 120 can be simplified.

[0091] The operation of the present embodiment will be described. A semiconductor light-emitting element 80 and an electronic component 100 are housed in a case 20, and the semiconductor light-emitting element 80 and the electronic component 100 are mounted on a common conductive portion 30 formed on the substrate surface 11. Thereby, compared with the case where the electronic component 100 is provided outside the case 20, the conductive path between the semiconductor light-emitting element 80 and the electronic component 100 is shortened.

[0092] According to the semiconductor light-emitting device 1 of the present embodiment, the following effects can be obtained. (1-1) The semiconductor light-emitting device 1 includes a substrate 10, a common conductive portion 30 formed on the substrate 10, and a semiconductor light-emitting element 80 and an electronic component 100 mounted on the common conductive portion 30. The semiconductor light-emitting element 80 and the electronic component 100 are electrically connected via the common conductive portion 30. According to this configuration, the conductive path between the semiconductor light-emitting element 80 and the electronic component 100 can be shortened. Therefore, the parasitic capacitance based on the conductive path between the semiconductor light-emitting element 80 and the electronic component 100 can be reduced. Thus, the semiconductor light-emitting element 80 and the electronic component 100 can be electrically connected while reducing the parasitic capacitance.

[0093] (1-2) An element bottom electrode 92 is formed on the element bottom surface 80b of the semiconductor light-emitting element 80. The electronic component 100 is used to drive the semiconductor light-emitting element 80, and has an upper surface 100a on which a first drive electrode 101 and a control electrode 102 are formed, and a lower surface 100b on which a second drive electrode 103 is formed. The element bottom electrode 92 and the second drive electrode 103 are joined to the common conductive portion 30. According to this configuration, the element bottom electrode 92 and the second drive electrode 103 can be electrically connected via the common conductive portion 30.

[0094] (1-3) The semiconductor light-emitting element 80 and the electronic component 100 are arranged in a predetermined direction, and the common conductive portion 30 has a common contact surface 30a extending in the Y direction, which is the arrangement direction of the semiconductor light-emitting element 80 and the electronic component 100. The semiconductor light-emitting element 80 and the electronic component 100 are arranged on the common contact surface 30a. According to this configuration, the semiconductor light-emitting element 80 and the electronic component 100 can be arranged on the common conductive portion 30.

[0095] The common contact surface 30a has a shape with the Y direction as the longitudinal direction and the X direction as the short direction. According to this configuration, since spaces are formed on both sides of the common contact surface 30a in the X direction, other conductive parts can be arranged in these spaces.

[0096] (1-4) On the substrate 10, a drive conductive part 60 having a drive contact surface 60a electrically connected to the first drive electrode 101 and a control conductive part 70 having a control contact surface 70a electrically connected to the control electrode 102 are formed. The drive conductive part 60 and the control conductive part 70 are dispersedly arranged on both sides of the common contact surface 30a in the X direction. According to this configuration, while avoiding interference between the drive conductive part 60 and the control conductive part 70, the areas of the drive contact surface 60a and the control contact surface 70a can be ensured.

[0097] (1-5) The drive contact surface 60a and the control contact surface 70a are arranged on both sides of the electronic component 100 in the X direction. Therefore, the length of the wire W3 can be shortened, and the parasitic capacitance based on the wire W3 can be reduced.

[0098] (1-6) On one side of the common contact surface 30a in the X direction, an element conductive part 50 having an element contact surface 50a is formed, and on the other side of the common contact surface 30a in the X direction, a connection conductive part 40 electrically connected to the common conductive part 30 is formed. The connection conductive part 40 has a connection contact surface 40a protruding in the X direction from the end on the side opposite to the element conductive part 50 among both ends of the common contact surface 30a in the X direction. According to this configuration, while avoiding interference with the element conductive part 50, electrical connection with the common conductive part 30 can be performed using the connection conductive part 40.

[0099] (1-7) The element conductive part 50 and the drive conductive part 60 are arranged on the same side among the two sides in the X direction with respect to the common conductive part 30. According to this configuration, since the element conductive part 50 and the drive conductive part 60 are arranged close to each other, components (for example, capacitors) connected to the element conductive part 50 and the drive conductive part 60 can be easily arranged.

[0100] (1-8) The connection conductive part 40 has a connection contact back surface 40b at a position opposite to the connection contact surface 40a on the back surface 12 of the substrate. The element conductive part 50 has an element contact back surface 50b at a position opposite to the element contact surface 50a on the back surface 12 of the substrate. The drive conductive part 60 has a drive contact back surface 60b at a position opposite to the drive contact surface 60a on the back surface 12 of the substrate. The control conductive part 70 has a control contact back surface 70b at a position opposite to the control contact surface 70a on the back surface 12 of the substrate. According to this configuration, contact with the outside of the semiconductor light-emitting device 1 can be ensured using each contact back surface 40b, 50b, 60b, 70b.

[0101] (1-9) The element contact back surface 50b is larger than the drive contact back surface 60b and the control contact back surface 70b. According to this configuration, the heat dissipation performance of the element conductive part 50 can be improved.

[0102] (1-10) The common conductive part 30 has a common contact back surface 30b at a position opposite to the common contact surface 30a on the back surface 12 of the substrate. According to this configuration, heat can be dissipated using the common contact back surface 30b. Therefore, the heat dissipation performance of the common conductive part 30 can be improved.

[0103] (1-11) The common contact back surface 30b is separated from the connection contact back surface 40b. According to this configuration, when mounting the semiconductor light-emitting device 1 on the circuit board 110, either one or both of the common contact back surface 30b and the connection contact back surface 40b can be used. Therefore, the degree of freedom in designing the circuit board 110 to which the semiconductor light-emitting device 1 is attached can be increased.

[0104] (1-12) The substrate 10 is made of an insulating material. The contact surfaces 30a, 40a, 50a, 60a, 70a are the surfaces of the surface conductive layers 31, 41, 51, 61, 71 formed on the substrate surface 11. The contact back surfaces 30b, 40b, 50b, 60b, 70b are the surfaces of the back conductive layers 32, 42, 52, 62, 72 formed on the substrate back surface 12. The conductive parts 30, 40, 50, 60, 70 have connecting parts 33, 43, 53, 63, 73 that connect the surface conductive layers 31, 41, 51, 61, 71 and the back conductive layers 32, 42, 52, 62, 72. The connecting parts 33, 43, 53, 63, 73 are arranged under the case 20. According to this configuration, it is possible to suppress the interference between the connecting parts 33, 43, 53, 63, 73 and the wires W1 to W3.

[0105] (1-13) The semiconductor light-emitting device 1 includes a case 20 that houses the semiconductor light-emitting element 80 and the electronic component 100. According to this configuration, the semiconductor light-emitting element 80 and the electronic component 100 can be protected.

[0106] [Second Embodiment] With reference to FIGS. 11 to 38, the semiconductor light-emitting device 1B of the second embodiment will be described. In the following description, the same reference numerals are used for the components common to the semiconductor light-emitting device 1 of the first embodiment, and the description thereof is omitted. In addition, for the components having the same functions as those of the semiconductor light-emitting device 1 of the first embodiment, "B" may be added after the reference numeral, and the description thereof may be omitted. Also, the same directions as those in the first embodiment are used.

[0107] FIG. 11 is a perspective view of the semiconductor light-emitting device 1B of the second embodiment. FIGS. 12 and 14 are front views of the semiconductor light-emitting device 1B, FIG. 13 is a side view of the semiconductor light-emitting device 1B, and FIG. 15 is a bottom view of the semiconductor light-emitting device 1B. In FIG. 14, the case 20B is omitted from the semiconductor light-emitting device 1B for illustration.

[0108] Compared with the semiconductor light-emitting device 1 of the first embodiment, the semiconductor light-emitting device 1B has differences in the configuration of the substrate 10, the omission of the connection conductive portion 40, the shapes of the plurality of conductive portions 30, 50, 60, 70, and the configuration of the case 20. In addition, the semiconductor light-emitting device 1B further includes a capacitor 120. In the following description, the substrate of this embodiment is referred to as the substrate 10B, the plurality of conductive portions are respectively referred to as the conductive portions 30B, 50B, 60B, 70B, or the common conductive portion 30B, the element conductive portion 50B, the driving conductive portion 60B, and the control conductive portion 70B, and the case is referred to as the case 20B. In this embodiment, the length LX of the semiconductor light-emitting device 1B in the X direction is about 4.5 mm, the length LY of the semiconductor light-emitting device 1B in the Y direction is about 4.5 mm, and the length LZ of the semiconductor light-emitting device 1B in the direction orthogonal to the X direction and the Y direction (hereinafter referred to as the Z direction) is about 1.83 mm. Note that the Z direction can also be said to be the thickness direction of the substrate 10B.

[0109] As shown in FIGS. 17 to 19, the case 20B houses the semiconductor light-emitting element 80, the electronic component 100, and the capacitor 120. The case 20B is attached to the substrate 10B as in the first embodiment. The inside of the case 20B is, for example, hollow. However, it is not limited to this, and the inside of the case 20B may be filled with some member.

[0110] The case 20B is formed in a box shape with one side in the Z direction open. In this embodiment, the case 20B is configured as a single component in which the frame 21 and the lid 22 are integrally formed. The case 20B is made of, for example, a material having light-shielding properties, for example, a colored resin. The light from the semiconductor light-emitting element 80 is blocked by the case 20B. The frame 21 is formed in a square shape slightly smaller than the substrate 10B. The lid 22 is formed to have the same size as the outer edge of the frame 21.

[0111] As shown in FIG. 12, the lid 22 is formed with an opening 22a that allows the light from the semiconductor light-emitting element 80 to pass through. The opening 22a is configured to at least expose the light-emitting region 90 of the semiconductor light-emitting element 80 in the Z direction. In the present embodiment, the opening 22a is configured to expose the entire upper surface 80a of the semiconductor light-emitting element 80 in the Z direction. Thus, in plan view, the opening 22a is formed to be larger than the upper surface 80a of the element. The shape of the opening 22a in plan view is a rectangular shape with the X direction as the longitudinal direction and the Y direction as the short transverse direction. The opening 22a is disposed closer to the third side wall portion 21c in the X direction and closer to the first side wall portion 21a in the Y direction when viewed from the Z direction within the lid 22.

[0112] As shown in FIGS. 12 and 13, a flat light diffusing plate 130 is attached to the lid 22 so as to cover the opening 22a from the side opposite to the substrate 10B side in the Z direction. The shape of the light diffusing plate 130 in plan view is a rectangular shape with the Y direction as the longitudinal direction and the X direction as the short transverse direction. For the light diffusing plate 130, a light-transmissive resin material such as polycarbonate, polyester, acrylic, etc. is appropriately selected. The size of the light diffusing plate 130 can be arbitrarily changed within a range that can cover the entire opening 22a from the Z direction. In the present embodiment, when viewed from the Z direction, the protruding distance DX1 of the light diffusing plate 130 from the opening 22a toward the third side wall portion 21c side in the X direction is smaller than the protruding distance DX2 from the opening 22a toward the fourth side wall portion 21d side in the X direction. The protruding distance DX1 is larger than the protruding distance DY1 of the light diffusing plate 130 from the opening 22a toward the first side wall portion 21a side in the Y direction and the protruding distance DY2 from the opening 22a toward the second side wall portion 21b side in the Y direction. Note that the protruding distances DX1 and DX2 can be arbitrarily changed respectively. In one example, the protruding distance DX1 may be equal to or greater than the protruding distance DX2. At least one of the protruding distances DX1 and DX2 may be equal to or less than the protruding distances DY1 and DY2. Also, the light diffusing plate 130 may be formed in a size that covers the entire lid 22 from the Z direction.

[0113] As shown in FIGS. 14 and 15, the substrate 10B of the present embodiment is formed of a conductive material and is made of, for example, a metal plate made of Cu. In other words, the substrate 10B is a lead frame. The substrate 10B is provided with an insulating portion 13 that partitions a plurality of conductive portions 30B, 50B, 60B, and 70B that are insulated from each other. The common conductive portion 30B, the element conductive portion 50B, the drive conductive portion 60B, and the control conductive portion 70B can be said to be a part of the substrate 10B partitioned in a state of being insulated from each other by the insulating portion 13. The insulating portion 13 is made of, for example, an epoxy resin. As shown in FIGS. 14 to 16, the conductive portions 30B, 50B, 60B, and 70B are exposed on both the substrate surface 11 and the substrate back surface 12 of the substrate 10B, respectively.

[0114] First, an outline of the configuration of the conductive portions 30B, 50B, 60B, and 70B will be described. As shown in FIGS. 14 to 16, the common conductive portion 30B has a common contact surface 30a and a common contact back surface 30b that face opposite sides in the Z direction. In the present embodiment, the common contact surface 30a is a part of the substrate surface 11, and the common contact back surface 30b is a part of the substrate back surface 12.

[0115] As shown in FIG. 14, the common contact surface 30a is disposed closer to the central portion in the X direction than the third side wall portion 21c and the fourth side wall portion 21d on the substrate surface 11. The common contact surface 30a is formed from above to below on the substrate surface 11.

[0116] The arrangement mode of each of the conductive portions 50B, 60B, and 70B with respect to the common contact surface 30a is the same as that in the first embodiment. That is, the control conductive portion 70B is disposed on one side in the X direction with respect to the common contact surface 30a, and the element conductive portion 50B and the drive conductive portion 60B are disposed on the other side in the X direction with respect to the common contact surface 30a. Further, the element conductive portion 50B and the drive conductive portion 60B are arranged to be spaced apart from each other in the Y direction.

[0117] As shown in FIGS. 14 to 16, the element conductive portion 50B has an element contact surface 50a and an element contact back surface 50b that face opposite sides in the Z direction. In the present embodiment, the element contact surface 50a is a part of the substrate surface 11, and the element contact back surface 50b is a part of the substrate back surface 12.

[0118] The drive conductive portion 60B has a drive contact surface 60a and a drive contact back surface 60b that face opposite sides in the Z direction. In the present embodiment, the drive contact surface 60a is a part of the substrate surface 11, and the drive contact back surface 60b is a part of the substrate back surface 12.

[0119] The control conductive portion 70B has a control contact surface 70a and a control contact back surface 70b that face opposite sides in the Z direction. In the present embodiment, the control contact surface 70a is a part of the substrate surface 11, and the control contact back surface 70b is a part of the substrate back surface 12.

[0120] Using FIGS. 14 to 22, the detailed shapes of the plurality of conductive portions 30B, 50B, 60B, and 70B will be described. As shown in FIGS. 14 and 15, the shape of the common contact surface 30a in plan view is substantially crank-shaped. As shown in FIG. 15, an insulating portion 13 is provided around the common contact surface 30a. The common contact surface 30a has a first common contact surface portion 30c on which the semiconductor light-emitting element 80 is mounted and a second common contact surface portion 30d on which the electronic component 100 is mounted. The first common contact surface portion 30c and the second common contact surface portion 30d are integrated. The common contact surface portion 30c and the second common contact surface portion 30d are arranged in the Y direction. As shown in FIG. 14, the first common contact surface portion 30c extends from the second common contact surface portion 30d toward the first side wall portion 21a in the Y direction. The first common contact surface portion 30c is arranged closer to the first side wall portion 21a than the second common contact surface portion 30d in the Y direction. In other words, the second common contact surface portion 30d is arranged closer to the second side wall portion 21b than the first common contact surface portion 30c in the Y direction.

[0121] The first common contact surface portion 30c and the second common contact surface portion 30d are arranged so as to be displaced from each other in the X direction. The first common contact surface portion 30c is arranged so as to be displaced closer to the third side wall portion 21c with respect to the second common contact surface portion 30d in the X direction. In other words, the second common contact surface portion 30d is arranged so as to be displaced closer to the fourth side wall portion 21d with respect to the first common contact surface portion 30c in the X direction. For this reason, it can be said that the first common contact surface portion 30c extends from the second common contact surface portion 30d toward the third side wall portion 21c in the X direction. More specifically, the first common contact surface portion 30c has a portion that protrudes from the end portion 31a on the third side wall portion 21c side of the second common contact surface portion 30d toward the third side wall portion 21c in the X direction. Also, it can be said that the second common contact surface portion 30d extends from the first common contact surface portion 30c toward the fourth side wall portion 21d in the X direction. More specifically, the second common contact surface portion 30d has a portion that protrudes from the end portion 31f on the fourth side wall portion 21d side of the first common contact surface portion 30c toward the fourth side wall portion 21d in the X direction.

[0122] The shape of the first common contact surface portion 30c in plan view is a rectangular shape in which the Y direction is the longitudinal direction and the X direction is the short side direction. The shape of the second common contact surface portion 30d in plan view is a rectangular shape in which the X direction is the longitudinal direction and the Y direction is the short side direction. The size of the first common contact surface portion 30c in the X direction is smaller than the size of the second common contact surface portion 30d in the X direction and the size in the Y direction. The size of the first common contact surface portion 30c in the Y direction is larger than the size of the second common contact surface portion 30d in the X direction and the size in the Y direction. Since the difference between the size of the first common contact surface portion 30c in the Y direction and the size of the second common contact surface portion 30d in the Y direction is larger than the difference between the size of the first common contact surface portion 30c in the X direction and the size of the second common contact surface portion 30d in the X direction, the first common contact surface portion 30c is larger than the second common contact surface portion 30d.

[0123] As shown in FIG. 14, the common contact surface 30a is formed to a position overlapping the frame 21 in the Y direction, and both ends of the common contact surface 30a in the Y direction have portions protruding from the outer surfaces of the first side wall portion 21a, the second side wall portion 21b, and the third side wall portion 21c when viewed from the Z direction.

[0124] More specifically, two protrusions 34a and 34b are formed at the end of the first common contact surface portion 30c on the first side wall portion 21a side in the Y direction, and two protrusions 34c and 34d are formed at the end of the second common contact surface portion 30d on the second side wall portion 21b side. Also, two protrusions 34e and 34f are formed at the end of the first common contact surface portion 30c on the third side wall portion 21c side in the X direction.

[0125] The protrusions 34a and 34b each protrude from the outer surface of the first side wall portion 21a when viewed from the Z direction. The protrusions 34a and 34b are formed spaced apart from each other in the X direction. The protrusion 34a is located closer to the element conductive portion 50B side (the fourth side wall portion 21d side) than the protrusion 34b in the X direction. The protrusions 34c and 34d each protrude from the outer surface of the second side wall portion 21b when viewed from the Z direction. The protrusions 34c and 34d are formed spaced apart from each other in the X direction. The protrusion 34c is located closer to the drive conductive portion 60B side (the fourth side wall portion 21d side) than the protrusion 34d in the X direction. The protrusions 34e and 34f each protrude from the outer surface of the third side wall portion 21c when viewed from the Z direction. The protrusions 34e and 34f are formed spaced apart from each other in the Y direction. The protrusion 34e is located closer to the first side wall portion 21a side than the protrusion 34f in the Y direction.

[0126] In the present embodiment, the protruding portions 34a to 34f are the remaining portions obtained by cutting the suspension leads that suspend the common conductive portion 30B in the lead frame. The protruding portions 34a to 34f are exposed from the side surface of the substrate 10B. Further, the protruding portions 34a to 34f are exposed from the substrate surface 11. Note that the number of these protruding portions can be arbitrarily changed. When viewed from above, the connection portions between the protruding portions 34a to 34f and the common contact surface 30a are each curved surfaces (see FIG. 15). Note that the number of these protruding portions can be arbitrarily changed.

[0127] Also, as shown in FIGS. 14 and 15, a plurality of recesses for restricting the movement of the common conductive portion 30B are formed in the common conductive portion 30B. In the present embodiment, a plurality of recesses are formed in the common contact surface 30a. In the illustrated example, recesses 35a, a pair of recesses 35b, a pair of recesses 35c, recess 35d, and recess 35e are formed in the common contact surface 30a. Note that the number of these recesses can be arbitrarily changed.

[0128] As shown in FIG. 14, the recess 35a is recessed in the Y direction from the end 31b on the first side wall portion 21a side to the second side wall portion 21b in the first common contact surface portion 30c. The bottom of the recess 35a is formed of a curved surface. In the present embodiment, the shape of the recess 35a in plan view is a concave curved surface shape whose width narrows toward the bottom. In the present embodiment, the recess 35a extends to the inner surface of the first side wall portion 21a when viewed from the Z direction. Further, as shown in FIG. 20, the recess 35a is recessed in the Z direction from the first common contact surface portion 30c to the surface layer portion in the Z direction of the common conductive portion 30B. The insulating portion 13 has entered the recess 35a. The insulating portion 13 that has entered the recess 35a has a surface-side half-insulating portion 13U that does not penetrate the substrate 10B in the Z direction. The surface-side half-insulating portion 13U of the recess 35a is a portion surrounded by the recess 35a and the broken line shown in FIG. 15. The portion of the insulating portion 13 above the surface-side half-insulating portion 13U of the recess 35a penetrates the substrate 10B in the Z direction. Note that the size of the recess 35a in the X direction and the size in the Y direction can be arbitrarily changed respectively. In one example, when viewed from the Z direction, the inner edge of the recess 35a may be located inside the inner surface of the first side wall portion 21a, or the inner edge may be located outside the inner surface of the first side wall portion 21a.

[0129] As shown in FIG. 14, the pair of recesses 35b are recessed in the X direction from the end 31c on the side of the fourth side wall portion 21d in the X direction of the second common contact surface portion 30d. The bottoms of the pair of recesses 35b are each formed of a curved surface. In the present embodiment, the shape of each of the pair of recesses 35b in plan view is a concave curved surface shape whose width narrows toward the bottom. Although not shown, the pair of recesses 35b are recessed in the Z direction from the second common contact surface portion 30d to the surface layer portion of the common conductive portion 30B in the Z direction. An insulating portion 13 enters each of the pair of recesses 35b. The insulating portion 13 that enters each of the pair of recesses 35b has a surface-side half insulating portion 13U that does not penetrate the substrate 10B in the Z direction. The surface-side half insulating portion 13U of each of the pair of recesses 35b is a portion inside the flange 36 (see FIG. 17) described later among the portions surrounded by the pair of recesses 35b and the broken line shown in FIG. 15. The portion of the insulating portion 13 on the side of the drive conductive portion 60B in the X direction rather than the surface-side half insulating portion 13U of the pair of recesses 35b penetrates the substrate 10B in the Z direction.

[0130] The pair of recesses 35c are recessed in the X direction from the end 31a of the second common contact surface portion 30d. The bottoms of the pair of recesses 35c are each formed of a curved surface. In the present embodiment, the shape of each of the pair of recesses 35c in plan view is a concave curved surface shape whose width narrows toward the bottom. Although not shown, the pair of recesses 35c are recessed in the Z direction from the second common contact surface portion 30d to the surface layer portion of the common conductive portion 30B in the Z direction, similarly to the pair of recesses 35b. An insulating portion 13 enters each of the pair of recesses 35c. The shape of each of the pair of recesses 35c in plan view is a symmetric shape with the shape of each of the pair of recesses 35b in plan view.

[0131] Note that the size in the X direction and the size in the Y direction of the pair of recesses 35b and 35c can each be arbitrarily changed. In one example, at least one of the size in the X direction and the size in the Y direction of the pair of recesses 35b may be different from that of the pair of recesses 35c.

[0132] As shown in FIG. 14, the recess 35d is recessed in the Y direction from the end 31d on the side of the third side wall portion 21c toward the fourth side wall portion 21d in the first common contact surface portion 30c. The bottom of the recess 35d is formed of a curved surface. In the present embodiment, the shape of the recess 35d in plan view is a concave curved surface shape whose width narrows toward the bottom. In the present embodiment, the recess 35d extends to the inner surface of the third side wall portion 21c when viewed from the Z direction. Further, as shown in FIG. 20, the recess 35d is recessed in the Z direction from the first common contact surface portion 30c to the surface layer portion in the Z direction of the common conductive portion 30B. The insulating portion 13 has entered the recess 35d. The insulating portion 13 that has entered the recess 35d has a surface-side half-insulating portion 13U that does not penetrate the substrate 10B in the Z direction. The surface-side half-insulating portion 13U of the recess 35d is a portion inside the flange 36 (see FIG. 17) among the portions surrounded by the recess 35d and the broken line shown in FIG. 15. The portion of the insulating portion 13 to the left of the surface-side half-insulating portion 13U of the recess 35d penetrates the substrate 10B in the Z direction. Note that the size of the recess 35d in the X direction and the size in the Y direction can be arbitrarily changed. In one example, when viewed from the Z direction, the inner edge of the recess 35d may be located inside the inner surface of the third side wall portion 21c, or the inner edge may be located outside the inner surface of the third side wall portion 21c.

[0133] As shown in FIG. 14, the recess 35e is recessed in the Y direction from the end 31e on the second side wall portion 21b side of the first common contact surface portion 30c. The bottoms of the recesses 35e are each formed of a curved surface. In the present embodiment, the shape of the recess 35e in plan view is a concave curved surface shape whose width narrows toward the bottom. Further, as shown in FIG. 21, the recess 35e is recessed in the Z direction from the first common contact surface portion 30c to the surface layer portion in the Z direction of the common conductive portion 30B. The insulating portion 13 enters the recess 35e. The insulating portion 13 that has entered the recess 35e has a surface-side half-insulating portion 13U that does not penetrate the substrate 10B in the Z direction. The surface-side half-insulating portion 13U of the recess 35e is a portion inside the flange 36 (see FIG. 19) among the portions surrounded by the recess 35e and the broken line shown in FIG. 15. The portion of the insulating portion 13 below the surface-side half-insulating portion 13U of the recess 35e penetrates the substrate 10B in the Z direction. Note that the size of the recess 35e in the X direction and the size in the Y direction can each be arbitrarily changed. In one example, when viewed from the Z direction, the inner edge of the recess 35e may be located inside the inner surface of the third side wall portion 21c, or the inner edge of the recess 35e may be located outside the inner surface of the third side wall portion 21c.

[0134] Also, the shapes of the recesses 35a to 35e in plan view can each be arbitrarily changed. In one example, the shapes of the recesses 35a to 35e in plan view may be rectangular concave shapes. The depth of some of the recesses 35a to 35e in plan view may be different from the depth of another part of the recesses 35a to 35e.

[0135] As shown in FIGS. 20 to 22, a flange 36 is formed at the peripheral edge of the common contact surface 30a in a cross-sectional view taken in a plane along the Z direction of the common conductive portion 30B. In other words, the back layer portion including the common contact back surface 30b, which is on the common contact back surface 30b side rather than the surface layer portion including the common contact surface 30a in the common conductive portion 30B, is recessed in a direction orthogonal to the Z direction with respect to the surface layer portion. The insulating portion 13 has entered this recessed portion. The insulating portion 13 that has entered on the common contact back surface 30b side with respect to the flange 36 is the back surface side half insulating portion 13L that does not penetrate the substrate 10B in the Z direction. The portion of the insulating portion 13 outside the flange 36 penetrates the substrate 10B in the Z direction and is connected to the back surface side half insulating portion 13L of the flange 36.

[0136] Note that the peripheral edge of the common contact surface 30a includes the protruding portions 34a to 34f (see FIGS. 14 and 15). The protruding portions 34a to 34f extend from the flange 36 and are formed to be equal in thickness to the flange 36. That is, the insulating portion 13 has entered on the common contact back surface 30b side with respect to the protruding portions 34a to 34f, and the protruding portions 34a to 34f are not exposed from the substrate back surface 12. The insulating portion 13 that has entered on the common contact back surface 30b side with respect to the protruding portions 34a to 34f is the back surface side half insulating portion 13L that does not penetrate the substrate 10B in the Z direction. In the direction orthogonal to the extending direction of the protruding portions 34a to 34f when viewed from the Z direction, the portions of the insulating portion 13 on both sides of the protruding portions 34a to 34f penetrate the substrate 10B and are connected to the back surface side half insulating portion 13L of the protruding portions 34a to 34f. The common contact back surface 30b is exposed from the substrate back surface 12 as a portion inside the flange 36 of the common contact surface 30a. Although not shown, the recesses 35a to 35e are formed from the peripheral edge (flange 36) of the common contact surface 30a to the inside of the common contact surface 30a. That is, a part of the recesses 35a to 35e overlaps the common contact back surface 30b when viewed from the Z direction. For this reason, a part of the surface side half insulating portion 13U of the recesses 35a to 35e overlaps the common contact back surface 30b when viewed from the Z direction.

[0137] As shown in FIGS. 14 and 15, the element contact surface 50a is disposed at the corner of the substrate 10B on the side of the first side wall portion 21a and the fourth side wall portion 21d. The element contact surface 50a is spaced apart from the first common contact surface portion 30c in the X direction. An insulating portion 13 is provided around the element contact surface 50a.

[0138] As shown in FIG. 14, when viewed from the Y direction, the portion of the element contact surface 50a on the side of the third side wall portion 21c overlaps with the portion of the second common contact surface portion 30d on the side of the fourth side wall portion 21d. It can also be said that the element contact surface 50a enters the recessed region formed by the first common contact surface portion 30c being displaced in the X direction with respect to the second common contact surface portion 30d. Further, the element contact surface 50a faces the first common contact surface portion 30c in the X direction.

[0139] As shown in FIG. 15, the shape of the element contact surface 50a in plan view is a rectangular shape with the X direction as the longitudinal direction and the Y direction as the short side direction. The size of the element contact surface 50a in the Y direction is smaller than the size of the first common contact surface portion 30c in the Y direction. The size of the element contact surface 50a in the X direction is larger than the size of the first common contact surface portion 30c in the X direction.

[0140] As shown in FIG. 14, the end portion of the element contact surface 50a on the side of the first side wall portion 21a is formed to a position overlapping the first side wall portion 21a when viewed from the Z direction, and has a portion protruding from the outer surface of the first side wall portion 21a. The end portion of the element contact surface 50a on the side of the fourth side wall portion 21d is formed to a position overlapping the fourth side wall portion 21d when viewed from the Z direction, and has a portion protruding from the outer surface of the fourth side wall portion 21d.

[0141] More specifically, protrusions 54a and 54b are formed at the end of the element contact surface 50a on the side of the first side wall portion 21a in the Y direction, and a protrusion 54c is formed at the end of the element contact surface 50a on the side of the fourth side wall portion 21d in the X direction. The protrusions 54a and 54b each protrude from the outer surface of the first side wall portion 21a when viewed from the Z direction. The protrusions 54a and 54b are formed spaced apart from each other in the X direction. The protrusion 54a is located closer to the fourth side wall portion 21d than the protrusion 54b. The protrusion 54c protrudes from the outer surface of the fourth side wall portion 21d when viewed from the Z direction. The protrusion 54c is formed at the center of the element contact surface 50a in the Y direction. In the present embodiment, the protrusions 54a to 54c are each the remaining portion after cutting the suspension leads that suspend the element conductive portion 50B in the lead frame. Note that the number of these protrusions can be arbitrarily changed. When viewed from the Z direction, the connection portions between the protrusions 54a to 54c and the element contact surface 50a are each curved surfaces (see FIG. 15).

[0142] In addition, a recess 55 for restricting the movement of the element conductive portion 50B is formed in the element conductive portion 50B. In the present embodiment, the recess 55 is formed in the element contact surface 50a. Note that the number of recesses can be arbitrarily changed.

[0143] As shown in FIG. 14, the recess 55 is formed at the end on the first side wall portion 21a side and the end on the third side wall portion 21c side of the element contact surface 50a. The recess 55 is recessed in the Y direction from the end 51a on the first side wall portion 21a side of the element contact surface 50a toward the second side wall portion 21b. The length of the recess 55 in the Y direction (the depth of the recess 55a in plan view) is longer (deeper) than the lengths of the recesses 35a, 35d, 35e in the Y direction and the lengths of the recesses 35b, 35c in the X direction (the depths of the recesses 35a to 35e in plan view). The bottom of the recess 55 is formed of a curved surface. In the present embodiment, the shape of the recess 55 in plan view has a portion extending in the Y direction without changing the width dimension, and is a concave curved surface shape whose width becomes narrower toward the bottom. In the present embodiment, the recess 55 extends inward beyond the inner surface of the first side wall portion 21a when viewed from the Z direction. The recess 55 functions as a mark for the formation position of the second bonding portion of the wire W1.

[0144] Also, as shown in FIG. 20, the recess 55 is recessed in the Z direction from the element contact surface 50a to the surface layer portion of the element conductive portion 50B in the Z direction. The insulating portion 13 has entered the recess 55. The insulating portion 13 that has entered the recess 55 has a surface-side half-insulating portion 13U that does not penetrate the substrate 10B in the Z direction. The surface-side half-insulating portion 13U of the recess 55 is a portion inside the flange 56 (see FIG. 20) among the portions surrounded by the recess 55 and the broken line shown in FIG. 15. The portion of the insulating portion 13 above the surface-side half-insulating portion 13U of the recess 55 penetrates the substrate 10B in the Z direction. In the present embodiment, the depth of the recess 55 in the Z direction is equal to the depths of the recesses 35a to 35e (see FIG. 15) in the Z direction. Here, if the difference between the depth of the recess 55 in the Z direction and the depths of the recesses 35a to 35e in the Z direction is within 5% of the depths of the recesses 35a to 35e in the Z direction, it can be said that the depth of the recess 55 in the Z direction is equal to the depths of the recesses 35a to 35e in the Z direction.

[0145] Note that the size of the recess 55 in the X direction and the size in the Y direction shown in FIG. 14 can each be arbitrarily changed. In one example, the inner edge of the recess 55 may be at the same position as the inner surface of the first side wall portion 21a when viewed from the Z direction, or the inner edge may be located outside the inner surface of the first side wall portion 21a. Also, the orientation of the recess 55 can be arbitrarily changed. In one example, the recess 55 may be recessed in the Y direction from the end portion 51b on the third side wall portion 21c side to the fourth side wall portion 21d side of the element contact surface 50a.

[0146] As shown in FIG. 20, a flange 56 is formed at the peripheral edge of the element contact surface 50a in a cross-sectional view taken in a plane along the Z direction of the element conductive portion 50B. In other words, the back layer portion including the element contact back surface 50b, which is on the element contact back surface 50b side rather than the surface layer portion including the element contact surface 50a of the element conductive portion 50B, is recessed in a direction orthogonal to the Z direction with respect to the surface layer portion. The insulating portion 13 has entered this recessed portion. The insulating portion 13 that has entered on the element contact back surface 50b side with respect to the flange 56 is the back surface side half-insulating portion 13L that does not penetrate the substrate 10B in the Z direction. The portion of the insulating portion 13 outside the flange 56 penetrates the substrate 10B in the Z direction and is connected to the back surface side half-insulating portion 13L of the flange 56.

[0147] Note that the peripheral portion of the element contact surface 50a includes protruding portions 54a to 54c (see FIGS. 14 and 15). The protruding portions 54a to 54c are each exposed on the side surface of the substrate 10B and the substrate surface 11. The protruding portions 54a to 54c extend from the flange 56 and are formed to be equal in thickness to the flange 56. That is, the insulating portion 13 enters the element contact back surface 50b side with respect to the protruding portions 54a to 54c, and the protruding portions 54a to 54c are not exposed from the substrate back surface 12. The insulating portion 13 that enters the element contact back surface 50b side with respect to the protruding portions 54a to 54c is the back surface side half-insulating portion 13L that does not penetrate the substrate 10B in the Z direction. When viewed from the Z direction, in the direction orthogonal to the extending direction of the protruding portions 54a to 54c, the portions of the insulating portion 13 on both sides of the protruding portions 54a to 54c penetrate the substrate 10B and are connected to the back surface side half-insulating portion 13L of the protruding portions 54a to 54c. The element contact back surface 50b is exposed from the substrate back surface 12 as a portion inside the flange 56 of the element contact surface 50a. Also, although not shown, the recess 55 is formed to the inside of the element contact surface 50a rather than the peripheral portion (flange 56) of the element contact surface 50a. That is, a part of the recess 55 overlaps the element contact back surface 50b when viewed from the Z direction. For this reason, a part of the surface side half-insulating portion 13U of the recess 55 overlaps the element contact back surface 50b when viewed from the Z direction.

[0148] As shown in FIGS. 14 and 15, the drive contact surface 60a is arranged to be separated from the element contact surface 50a in the Y direction in a state aligned with the element contact surface 50a in the X direction. As shown in FIG. 14, the drive contact surface 60a is arranged to surround the second common contact surface portion 30d from the fourth side wall portion 21d side in the X direction and the first side wall portion 21a side in the Y direction. The shape of the drive contact surface 60a in plan view is substantially L-shaped. As shown in FIG. 15, an insulating portion 13 is provided around the drive contact surface 60a.

[0149] The drive contact surface 60a has a first drive contact surface portion 60c and a second drive contact surface portion 60d. The first drive contact surface portion 60c and the second drive contact surface portion 60d are integrated. The first drive contact surface portion 60c and the second drive contact surface portion 60d are arranged in the Y direction. As shown in FIG. 14, the first drive contact surface portion 60c is arranged closer to the first side wall portion 21a than the second drive contact surface portion 60d in the Y direction. In other words, the second drive contact surface portion 60d is arranged closer to the second side wall portion 21b than the first drive contact surface portion 60c in the Y direction. That is, the first drive contact surface portion 60c is arranged between the element contact surface 50a and the second drive contact surface portion 60d in the Y direction. The first drive contact surface portion 60c is arranged so as to overlap the first common contact surface portion 30c when viewed from the X direction. The first drive contact surface portion 60c is arranged closer to the first side wall portion 21a than the second common contact surface portion 30d. The second drive contact surface portion 60d is arranged so as to overlap the second common contact surface portion 30d when viewed from the X direction.

[0150] As shown in FIG. 15, the first drive contact surface portion 60c extends in the X direction, and the second drive contact surface portion 60d extends in the Y direction. The shape of the first drive contact surface portion 60c in plan view is a rectangular shape with the X direction as the longitudinal direction and the Y direction as the short side direction. The shape of the second drive contact surface portion 60d in plan view is a rectangular shape with the Y direction as the longitudinal direction and the X direction as the short side direction. As shown in FIG. 14, the second drive contact surface portion 60d extends from the end portion on the fourth side wall portion 21d side of the first drive contact surface portion 60c toward the second side wall portion 21b. In this way, the second drive contact surface portion 60d is recessed with respect to the first drive contact surface portion 60c so that the length in the X direction is shorter than that of the first drive contact surface portion 60c. That is, the drive contact surface 60a has a recessed region 60r partitioned by the first drive contact surface portion 60c and the second drive contact surface portion 60d. The second common contact surface portion 30d enters the recessed region 60r. The second common contact surface portion 30d faces the second drive contact surface portion 60d in the X direction. The portion of the second common contact surface portion 30d that enters the recessed region 60r overlaps the first drive contact surface portion 60c when viewed from the Y direction.

[0151] The first drive contact surface portion 60c faces the first common contact surface portion 30c in the X direction and faces the element contact surface 50a in the Y direction. The length of the first drive contact surface portion 60c in the X direction is equal to the length of the element contact surface 50a in the X direction. Here, if the difference between the length of the first drive contact surface portion 60c in the X direction and the length of the element contact surface 50a in the X direction is within, for example, 5% of the length of the element contact surface 50a in the X direction, it can be said that the length of the first drive contact surface portion 60c in the X direction is equal to the length of the element contact surface 50a in the X direction.

[0152] As shown in FIG. 14, the end portion of the driving contact surface 60a on the fourth side wall portion 21d side is formed to a position overlapping the fourth side wall portion 21d when viewed from the Z direction, and has a portion protruding from the outer surface of the fourth side wall portion 21d. The end portion of the driving contact surface 60a on the second side wall portion 21b side is formed to a position overlapping the second side wall portion 21b when viewed from the Z direction, and has a portion protruding from the outer surface of the second side wall portion 21b.

[0153] More specifically, protruding portions 64a and 64b are formed at the end portion of the driving contact surface 60a on the fourth side wall portion 21d side in the X direction, and a protruding portion 64c is formed at the end portion of the driving contact surface 60a on the second side wall portion 21b side in the Y direction. The protruding portions 64a and 64b each protrude from the outer surface of the fourth side wall portion 21d when viewed from the Z direction. The protruding portions 64a and 64b are spaced apart from each other in the Y direction. The protruding portion 64a is located closer to the element contact surface 50a side than the protruding portion 64b. In the present embodiment, the protruding portion 64a is formed on the first driving contact surface portion 60c, and the protruding portion 64b is formed on the second driving contact surface portion 60d. The protruding portion 64c protrudes from the outer surface of the second side wall portion 21b when viewed from the Z direction. The protruding portion 64c is formed on the second driving contact surface portion 60d. The protruding portion 64c is formed at the end portion of the second driving contact surface portion 60d on the second common contact surface portion 30d side in the X direction. In the present embodiment, the protruding portions 64a to 64c are each the remaining portion after cutting the suspension lead that suspends the driving conductive portion 60B in the lead frame. The protruding portion 64a is provided on the first driving contact surface portion 60c. The protruding portions 64b and 64c are each provided on the second driving contact surface portion 60d. Note that the number of these protruding portions can be arbitrarily changed. When viewed from the Z direction, the connection portions between the protruding portions 64a to 64c and the driving contact surface 60a are each a curved surface (see FIG. 15).

[0154] Further, a recess 65 is formed in the drive conductive part 60B to restrict the movement of the drive conductive part 60B. In the present embodiment, the recess 65 is formed in the drive contact surface 60a. Note that the number of recesses can be arbitrarily changed.

[0155] The recess 65 is formed at the end on the first drive contact surface portion 60c side of the second drive contact surface portion 60d in the Y direction. The recess 65 is recessed from the end 61a on the side of the third side wall portion 21c toward the fourth side wall portion 21d in the second drive contact surface portion 60d. Further, the recess 65 is formed so as to be adjacent to the first drive contact surface portion 60c in the Y direction. Specifically, a part of the recess 65 is constituted by the end 61b on the side of the second side wall portion 21b in the first drive contact surface portion 60c. In the present embodiment, the maximum value of the width of the recess 65 is equal to the gap in the Y direction between the first drive contact surface portion 60c and the second common contact surface portion 30d. Here, if the difference between the maximum value of the width of the recess 65 and the above gap is, for example, within 5% of the above gap, it can be said that the maximum value of the width of the recess 65 is equal to the gap in the Y direction between the first drive contact surface portion 60c, the second common contact surface portion 30d.

[0156] The recess 65 penetrates the drive conductive part 60B in the Z direction. The insulating part 13 has entered the recess 65. In other words, different from the other recesses 35a to 35e and 55, the insulating part 13 penetrating the substrate 10B in the Z direction has entered the recess 65.

[0157] As shown in FIG. 21, in a cross-sectional view taken by cutting the drive contact surface 60a along a plane in the Z direction, a flange 66 is formed at the peripheral edge of the drive contact surface 60a. In other words, the back layer portion, which is on the side of the back surface 60b of the drive contact and includes the back surface 60b of the drive contact, is recessed in a direction orthogonal to the Z direction with respect to the surface layer portion including the drive contact surface 60a among the drive conductive portions 60B. The insulating portion 13 has entered this recessed portion. The insulating portion 13 that has entered on the side of the back surface 60b of the drive contact with respect to the flange 66 is the back surface side half-insulating portion 13L that does not penetrate the substrate 10B in the Z direction. The portion of the insulating portion 13 outside the flange 66 penetrates the substrate 10B in the Z direction. Note that the peripheral edge of the drive contact surface 60a includes protruding portions 64a to 64c (see FIGS. 14 and 15). The protruding portions 64a to 64c extend from the flange 66 and are formed to be equal in thickness to the flange 66. That is, the insulating portion 13 has entered on the side of the back surface 60b of the drive contact with respect to the protruding portions 64a to 64c, and the protruding portions 64a to 64c are not exposed from the back surface 12 of the substrate. The insulating portion 13 that has entered on the side of the back surface 60b of the drive contact with respect to the protruding portions 64a to 64c is the back surface side half-insulating portion 13L that does not penetrate the substrate 10B in the Z direction. In a direction orthogonal to the extending direction of the protruding portions 64a to 64c when viewed from the Z direction, the portions of the insulating portion 13 on both sides of the protruding portions 64a to 64c penetrate the substrate 10B and are connected to the back surface side half-insulating portion 13L of the protruding portions 64a to 64c. The back surface 60b of the drive contact is exposed from the back surface 12 of the substrate as a portion inside the flange 66 of the drive contact surface 60a. Also, although not shown, the recess 65 is formed to the inside of the drive contact surface 60a from the peripheral edge (flange 66) of the drive contact surface 60a.

[0158] As shown in FIGS. 14 and 15, the control contact surface 70a is disposed at a corner of the substrate 10B on the side of the second side wall portion 21b and the third side wall portion 21c. The control contact surface 70a is spaced apart from the second common contact surface portion 30d in the X direction. Further, the control contact surface 70a is spaced apart from the first common contact surface portion 30c in the Y direction. When viewed from the X direction, the control contact surface 70a is disposed so as to overlap the second common contact surface portion 30d. That is, the control contact surface 70a faces the second common contact surface portion 30d in the X direction. When viewed from the Y direction, the control contact surface 70a is disposed so as to overlap the first common contact surface portion 30c. That is, the control contact surface 70a faces a portion of the first common contact surface portion 30c that protrudes from the second common contact surface portion 30d toward the third side wall portion 21c in the Y direction. Thus, the control contact surface 70a is formed within a region surrounded by the first common contact surface portion 30c and the second common contact surface portion 30d. It can also be said that the control contact surface 70a enters a recessed region formed by the first common contact surface portion 30c being displaced in the X direction with respect to the second common contact surface portion 30d.

[0159] Also, as shown in FIGS. 14 and 15, the second common contact surface portion 30d is disposed between the drive conductive portion 60B and the control conductive portion 70B in the X direction. It can also be said that the second common contact surface portion 30d is disposed between the second drive contact surface portion 60d and the control contact surface 70a in the X direction.

[0160] As shown in FIG. 15, the shape of the control contact surface 70a in plan view is a rectangular shape in which the Y direction is the longitudinal direction and the X direction is the short side direction. The size of the control contact surface 70a in the Y direction is smaller than the size of the first common contact surface portion 30c in the Y direction. The size of the control contact surface 70a in the X direction is smaller than the size of the first common contact surface portion 30c in the X direction.

[0161] The end portion of the control contact surface 70a on the second side wall portion 21b side is formed up to a position overlapping the second side wall portion 21b when viewed from the Z direction, and has a portion protruding from the outer surface of the second side wall portion 21b. The end portion of the control contact surface 70a on the third side wall portion 21c side is formed up to a position overlapping the third side wall portion 21c when viewed from the Z direction, and has a portion protruding from the outer surface of the third side wall portion 21c.

[0162] More specifically, a protruding portion 74a is formed at the end portion of the control contact surface 70a on the second side wall portion 21b side in the Y direction, and a protruding portion 74b is formed at the end portion of the control contact surface 70a on the third side wall portion 21c side in the X direction. The protruding portion 74a protrudes from the outer surface of the second side wall portion 21b when viewed from the Z direction. The protruding portion 74a is formed at the central portion of the control contact surface 70a in the Y direction. The protruding portion 74b protrudes from the outer surface of the third side wall portion 21c when viewed from the Z direction. The protruding portion 74b is formed at the end portion of the control contact surface 70a on the second common contact surface portion 30d side in the X direction. In the present embodiment, the protruding portions 74a and 74b are respectively the remaining portions after cutting the suspension leads that suspend the control conductive portion 70B in the lead frame. Note that the number of these protruding portions can be arbitrarily changed. When viewed from the Z direction, the connection portions between the protruding portions 74a and 74b and the control contact surface 70a are each a curved surface (see FIG. 15).

[0163] The periphery of the control contact surface 70a has a flange 76 (see FIG. 18) formed therein in a cross-sectional view taken in a plane along the Z direction of the control conductive portion 70B. In other words, the back layer portion of the control conductive portion 70B on the control contact back surface 70b side and including the control contact back surface 70b, rather than the surface layer portion including the control contact surface 70a, is recessed in the X and Y directions with respect to the surface layer portion. The insulating portion 13 has entered this recessed portion. The insulating portion 13 that has entered the control contact back surface 70b side with respect to the flange 76 of the control contact surface 70a is the back surface side half insulating portion 13L that does not penetrate the substrate 10B in the Z direction. The portion of the insulating portion 13 outside the flange 76 penetrates the substrate 10B in the Z direction. Note that the periphery of the control contact surface 70a includes protruding portions 74a and 74b. The protruding portions 74a and 74b extend from the flange 76 and are formed to be equal in thickness to the flange 76. That is, the insulating portion 13 has entered the control contact back surface 70b side with respect to the protruding portions 74a and 74b, and the protruding portions 74a and 74b are not exposed from the substrate back surface 12. The insulating portion 13 that has entered the control contact back surface 70b side with respect to the protruding portions 74a and 74b is the back surface side half insulating portion 13L that does not penetrate the substrate 10B in the Z direction. When viewed from the Z direction, in the direction orthogonal to the extending direction of the protruding portions 74a and 74b, the portions of the insulating portion 13 on both sides of the protruding portions 74a and 74b penetrate the substrate 10B and are connected to the back surface side half insulating portion 13L of the protruding portions 74a and 74b. The control contact back surface 70b is exposed from the substrate back surface 12 as a portion inside the flange 76.

[0164] As shown in FIG. 15, in the present embodiment, the common contact surface 30a is larger than the other contact surfaces 50a, 60a, and 70a. The first common contact surface portion 30c is larger than the other contact surfaces 50a, 60a, and 70a. The second common contact surface portion 30d is larger than the control contact surface 70a. The element contact surface 50a is larger than the control contact surface 70a. The drive contact surface 60a is larger than the control contact surface 70a.

[0165] Next, the layout of the back surface 12 side of the plurality of conductive parts 30B, 50B, 60B, and 70B will be described. As shown in FIG. 16, the common contact back surface 30b has a first common contact back surface portion 30e and a second common contact back surface portion 30f. The first common contact back surface portion 30e and the second common contact back surface portion 30f are formed to be separated in the Y direction. An insulating portion 13 is interposed between the first common contact back surface portion 30e and the second common contact back surface portion 30f.

[0166] More specifically, as shown in FIG. 16, in the portion (dashed line portion) between the first common contact back surface portion 30e and the second common contact back surface portion 30f in the Y direction, a recessed portion 35f that is recessed from the back surface 12 of the substrate toward the front surface 11 of the substrate is formed. The insulating portion 13 has entered this recessed portion 35f. The insulating portion 13 that has entered the recessed portion 35f is a back surface side half-insulating portion 13L that does not penetrate the substrate 10B in the Z direction. In other words, the first common contact back surface portion 30e and the second common contact back surface portion 30f are separated by the back surface side half-insulating portion 13L. This back surface side half-insulating portion 13L penetrates the common contact back surface 30b in the X direction.

[0167] As shown in FIG. 16, an insulating portion 13 that penetrates the substrate 10B is provided around the common conductive portion 30B. The back surface side half-insulating portion 13L provided in the recessed portion 35f is connected to the insulating portions 13 provided on both the left and right sides of the common conductive portion 30B. More specifically, the back surface side half-insulating portion 13L provided in the recessed portion 65a is provided below the left side of the second common contact back surface portion 30f and the portion of the first common contact back surface portion 30e that protrudes more to the left than the second common contact back surface portion 30f and penetrates the substrate 10B, and the insulating portion 13 provided on the right side of the first common contact back surface portion 30e and the upper side of the second common contact back surface portion 30f and penetrates the substrate 10B are connected.

[0168] The first common contact back surface portion 30e is formed at a position on the back surface 12 of the substrate opposite to the first common contact front surface portion 30c. The first common contact back surface portion 30e is formed in the upper left portion when viewed from the back surface 12 side of the substrate. The first common contact back surface portion 30e is rectangular with the X direction as the short side direction and the Y direction as the long side direction, similar to the first common contact front surface portion 30c. The first common contact back surface portion 30e is formed smaller than the first common contact front surface portion 30c when viewed from the Z direction.

[0169] The second common contact back surface portion 30f is formed at a position on the back surface 12 of the substrate opposite to the second common contact front surface portion 30d. The second common contact back surface portion 30f is formed at the center in the X direction and the lower part in the Y direction on the back surface 12 of the substrate. The second common contact back surface portion 30f is rectangular with the X direction as the long side direction and the Y direction as the short side direction, similar to the second common contact front surface portion 30d. The second common contact back surface portion 30f is formed smaller than the second common contact front surface portion 30d when viewed from the Z direction.

[0170] On the right side of the first common contact back surface portion 30e, the element contact back surface 50b and the drive contact back surface 60b are arranged. The element contact back surface 50b is formed at a position on the back surface 12 of the substrate opposite to the element contact front surface 50a. The element contact back surface 50b is formed in the upper left portion on the back surface 12 of the substrate. The element contact back surface 50b is separated from the common contact back surface 30b and they are not connected. That is, an insulating portion 13 is interposed between the element contact back surface 50b and the common contact back surface 30b. This insulating portion 13 extends in the Y direction.

[0171] The back surface 50b of the element contact has a rectangular shape with the X direction as the longitudinal direction and the Y direction as the short side direction. When viewed from the Z direction, the back surface 50b of the element contact is formed smaller than the front surface 50a of the element contact. The length of the back surface 50b of the element contact in the X direction is equal to the length of the first common contact back surface portion 30e in the X direction. Here, if the difference between the length of the back surface 50b of the element contact in the X direction and the length of the first common contact back surface portion 30e in the X direction is within 5% of the length of the first common contact back surface portion 30e in the X direction, it can be said that the length of the back surface 50b of the element contact in the X direction is equal to the length of the first common contact back surface portion 30e in the X direction.

[0172] The back surface 60b of the drive contact has a first drive contact back surface portion 60e and a second drive contact back surface portion 60f. The first drive contact back surface portion 60e and the second drive contact back surface portion 60f are formed spaced apart in the Y direction. An insulating portion 13 is interposed between the first drive contact back surface portion 60e and the second drive contact back surface portion 60f.

[0173] More specifically, as shown in FIG. 16, in the drive conductive portion 60B, a recess 65a that is recessed from the back surface 12 of the substrate toward the front surface 11 of the substrate is provided between the first drive contact back surface portion 60e and the second drive contact back surface portion 60f. This recess 65a does not penetrate the substrate 10B. A back surface side half-insulating portion 13L that does not penetrate the substrate 10B in the Z direction enters the recess 65a. This back surface side half-insulating portion 13L penetrates the back surface 60b of the drive contact in the X direction. Also, in the Z direction, the recess 65 and the recess 65a are connected.

[0174] Also, as shown in FIG. 16, an insulating portion 13 penetrating the substrate 10B is provided around the driving conductive portion 60B. The back-side half insulating portion 13L provided in the recess 65a is connected to the insulating portions 13 provided on both the left and right sides of the driving conductive portion 60B. More specifically, the back-side half insulating portion 13L provided in the recess 65a is provided below the left side of the second driving contact back surface portion 60f and the portion of the first driving contact back surface portion 60e that protrudes to the left of the second driving contact back surface portion 60f, and is an insulating portion 13 penetrating the substrate 10B, and is connected to the insulating portion 13 penetrating the substrate 10B provided on the right side of the first driving contact back surface portion 60e and the second driving contact back surface portion 60f.

[0175] The first driving contact back surface portion 60e is formed at a position on the substrate back surface 12 opposite to the first driving contact front surface portion 60c. The first driving contact back surface portion 60e is formed at the right central portion on the substrate back surface 12. The first driving contact back surface portion 60e is arranged to be separated from the element contact back surface 50b in the Y direction while being aligned with the element contact back surface 50b in the X direction. An insulating portion 13 is interposed between the first driving contact back surface portion 60e and the element contact back surface 50b. This insulating portion 13 extends in the X direction and is connected to the insulating portion 13 between the element contact back surface 50b and the common contact back surface 30b.

[0176] The first driving contact back surface portion 60e is, like the first driving contact front surface portion 60c, rectangular with the X direction as the longitudinal direction and the Y direction as the short direction. The first driving contact back surface portion 60e is formed smaller than the first driving contact front surface portion 60c when viewed from the Z direction. The length of the first driving contact back surface portion 60e in the X direction is equal to the length of the element contact back surface 50b in the X direction.

[0177] The lower edge of the back surface portion 60e of the first drive contact is aligned with the lower edge of the back surface portion 30e of the first common contact in the Y direction. Therefore, the length from the upper edge of the back surface 50b of the element contact to the lower edge of the back surface portion 60e of the first drive contact is equal to the length of the back surface portion 30e of the first common contact in the X direction. Here, if the difference between the length from the upper edge of the back surface 50b of the element contact to the lower edge of the back surface portion 60e of the first drive contact and the length of the back surface portion 30e of the first common contact in the X direction is within 5% of the length of the back surface portion 30e of the first common contact in the X direction, it can be said that the length from the upper edge of the back surface 50b of the element contact to the lower edge of the back surface portion 60e of the first drive contact is equal to the length of the back surface portion 30e of the first common contact in the X direction.

[0178] The back surface portion 60f of the second drive contact is formed at a position on the back surface 12 of the substrate opposite to the front surface portion 60d of the second drive contact. The back surface portion 60f of the second drive contact has a rectangular shape with the X direction as the short side direction and the Y direction as the long side direction, similar to the front surface portion 60d of the second drive contact. The back surface portion 60f of the second drive contact is formed in the lower right portion of the back surface 12 of the substrate.

[0179] The length of the back surface portion 60f of the second drive contact in the Y direction is equal to the length of the back surface portion 30f of the second common contact in the Y direction. The length of the back surface portion 60f of the second drive contact in the X direction is slightly larger than the length of the back surface portion 60e of the first drive contact in the Y direction. Here, if the difference between the length of the back surface portion 60f of the second drive contact in the Y direction and the length of the back surface portion 30f of the second common contact in the Y direction is, for example, within 5% of the length of the back surface portion 30f of the second common contact in the Y direction, it can be said that the length of the back surface portion 60f of the second drive contact in the Y direction is equal to the length of the back surface portion 30f of the second common contact in the Y direction.

[0180] As shown in FIG. 16, the right edges of the back surface 50b of the element contact, the back surface portion 60e of the first drive contact, and the back surface portion 60f of the second drive contact are aligned with each other. The back surface 70b of the control contact is formed at the lower left portion on the back surface 12 of the substrate. The back surface 70b of the control contact is formed at a position on the back surface 12 of the substrate opposite to the front surface 70a of the control contact. Here, in the present embodiment, the Y direction, which is the arrangement direction of the element conductive portion 50B and the drive conductive portion 60B, can be said to be the third direction, and the X direction orthogonal to the Y direction as viewed from the Z direction can be said to be the fourth direction. In this case, it can be said that the back surface portion 60f of the second drive contact and the back surface 70b of the control contact are dispersed and arranged on both sides in the fourth direction with respect to the back surface portion 30f of the second common contact.

[0181] Similar to the front surface 70a of the control contact, the back surface 70b of the control contact has a rectangular shape with the X direction as the short side direction and the Y direction as the long side direction. The length of the back surface 70b of the control contact in the Y direction is equal to the length of the back surface portion 30f of the second common contact in the Y direction. The length of the back surface 70b of the control contact in the X direction is equal to the length of the back surface portion 60f of the second drive contact in the X direction. That is, the back surface 70b of the control contact and the back surface portion 60f of the second drive contact have the same shape.

[0182] As shown in FIG. 16, the back surface portion 30f of the second common contact, the back surface portion 60f of the second drive contact, and the back surface 70b of the control contact are arranged spaced apart in the X direction in a state aligned in the Y direction. The lower edge of the back surface portion 60f of the second drive contact, the lower edge of the back surface portion 30f of the second common contact, and the lower edge of the back surface 70b of the control contact are aligned with each other. The upper edge of the back surface portion 60f of the second drive contact, the upper edge of the back surface portion 30f of the second common contact, and the upper edge of the back surface 70b of the control contact are aligned with each other. In this way, the back surface portion 60f of the second drive contact and the back surface 70b of the control contact are arranged symmetrically with respect to the back surface portion 30f of the second common contact.

[0183] Also, as shown in FIG. 16, the width dimensions of the insulating portions 13 between the contact back surfaces 30b, 50b, 60b, 70b adjacent to each other in the X direction or the Y direction among the contact back surfaces are equal to each other. Also, the length in the X direction of the insulating portion 13 interposed between the first common contact back surface portion 30e and the element contact back surface 50b and the first drive contact back surface portion 60e in the X direction is equal to the length in the Y direction of the insulating portion 13 interposed between the element contact back surface 50b and the first drive contact back surface portion 60e in the Y direction. Also, the length in the X direction of the insulating portion 13 interposed between the second common contact back surface portion 30f and the second drive contact back surface portion 60f in the X direction is equal to the length in the X direction of the insulating portion 13 interposed between the second common contact back surface portion 30f and the control contact back surface 70b in the X direction.

[0184] Here, if the difference between the width dimension of a predetermined insulating portion 13 and the width dimension of another insulating portion 13 is within, for example, 10% of the width dimension of the predetermined insulating portion 13, it can be said that the width dimensions of these insulating portions 13 are equal to each other.

[0185] Next, the positional relationship among the plurality of conductive portions 30B, 50B, 60B, 70B, the semiconductor light-emitting element 80, and the electronic component 100 will be described in detail. As shown in FIG. 14, the semiconductor light-emitting element 80 and the electronic component 100 are mounted on the common conductive portion 30B and are electrically connected via the common conductive portion 30B, in the same manner as in the first embodiment. In the present embodiment, when viewed from the Z direction, the semiconductor light-emitting element 80 is larger than the electronic component 100. Specifically, the semiconductor light-emitting element 80 is formed in a rectangular shape when viewed from the Z direction, and is arranged such that its long side direction is along the X direction and its short side direction is along the Y direction. The electronic component 100 is formed in a rectangular shape when viewed from the Z direction, and is arranged such that its long side direction is along the Y direction and its short side direction is along the X direction. The size of the semiconductor light-emitting element 80 in the X direction is larger than the size of the electronic component 100 in the X direction, and the size of the semiconductor light-emitting element 80 in the Y direction is larger than the size of the electronic component 100 in the Y direction.

[0186] In this embodiment, the semiconductor light-emitting element 80 and the electronic component 100 are arranged on the common contact surface 30a. More specifically, the semiconductor light-emitting element 80 is arranged on the first common contact surface portion 30c, and the electronic component 100 is arranged on the second common contact surface portion 30d. In this way, the semiconductor light-emitting element 80, which is larger than the electronic component 100, is arranged on the first common contact surface portion 30c, which is larger than the second common contact surface portion 30d. Therefore, the respective arrangement spaces for the semiconductor light-emitting element 80 and the electronic component 100 can be secured. In addition, since the length of the first common contact surface portion 30c in the X direction is larger than the length of the semiconductor light-emitting element 80 in the X direction, a semiconductor light-emitting element 80 having a size larger than the illustrated semiconductor light-emitting element 80 can also be arranged. Therefore, the versatility of the semiconductor light-emitting device 1B can be improved.

[0187] Also, in this embodiment, unlike the first embodiment, the semiconductor light-emitting element 80 and the electronic component 100 are arranged spaced apart in the Y direction in a state shifted in the X direction on the common contact surface 30a.

[0188] In this embodiment, the semiconductor light-emitting element 80 is arranged closer to the third side wall portion 21c than the electronic component 100, and the electronic component 100 is arranged closer to the fourth side wall portion 21d than the semiconductor light-emitting element 80. Therefore, it can be said that the electronic component 100 is arranged in the Y direction in a state shifted toward the fourth side wall portion 21d side in the X direction from the semiconductor light-emitting element 80. The semiconductor light-emitting element 80 is arranged at a position shifted with respect to the central portion in the X direction on the substrate surface 11, for example, arranged on the third side wall portion 21c side with respect to the central portion. The electronic component 100 is arranged at the central portion in the X direction on the substrate surface 11. Also, in this embodiment, when viewed from the Y direction, the semiconductor light-emitting element 80 overlaps the electronic component 100.

[0189] The semiconductor light-emitting element 80 is arranged closer to the third side wall portion 21c than the first common contact surface portion 30c in the X direction. In the illustrated example, the semiconductor light-emitting element 80 is arranged on the fourth side wall portion 21d side of the recess 35e of the first common contact surface portion 30c. When viewed from the Y direction, the end portion on the third side wall portion 21c side of the semiconductor light-emitting element 80 overlaps with the end portion on the fourth side wall portion 21d side of the control contact surface 70a. Also, the semiconductor light-emitting element 80 is arranged so as not to overlap with the recess 35f (see FIG. 19) formed in the common conductive portion 30B when viewed from the Z direction. In the present embodiment, as shown in FIG. 19, the semiconductor light-emitting element 80 is arranged on the side opposite to the electronic component 100 with respect to the recess 35f. According to this configuration, a decrease in the heat dissipation performance of the semiconductor light-emitting element 80 can be suppressed.

[0190] A part of the electronic component 100 overlaps with the first common contact surface portion 30c when viewed from the Y direction. Also, a part of the electronic component 100 overlaps with the first drive contact surface portion 60c when viewed from the Y direction. Also, the electronic component 100 is arranged so as not to overlap with the recess 35f when viewed from the Z direction. In the present embodiment, as shown in FIG. 19, the electronic component 100 is arranged on the side opposite to the semiconductor light-emitting element 80 with respect to the recess 35f. According to this configuration, a decrease in the heat dissipation performance of the electronic component 100 can be suppressed.

[0191] Since the semiconductor light-emitting element 80 is disposed on the first common contact surface portion 30c and the electronic component 100 is disposed on the second common contact surface portion 30d, the semiconductor light-emitting element 80 is disposed closer to the first side wall portion 21a than the electronic component 100, and the electronic component 100 is disposed closer to the second side wall portion 21b than the semiconductor light-emitting element 80. The semiconductor light-emitting element 80 and the electronic component 100 are disposed at positions shifted with respect to the central portion in the Y direction on the substrate surface 11. In the illustrated example, the semiconductor light-emitting element 80 is disposed between the central portion of the substrate surface 11 on the first common contact surface portion 30c and the first side wall portion 21a, and in this example, it is disposed closer to the central portion in the Y direction of the substrate surface 11 than the first side wall portion 21a. In other words, the semiconductor light-emitting element 80 is disposed closer to the second common contact surface portion 30d in the Y direction of the first common contact surface portion 30c. Here, closer to the second common contact surface portion 30d in the Y direction of the first common contact surface portion 30c means closer to the end portion on the second common contact surface portion 30d side among both end portions in the Y direction of the first common contact surface portion 30c. The electronic component 100 is disposed between the central portion of the substrate surface 11 on the second common contact surface portion 30d and the second side wall portion 21b, and in this example, it is disposed closer to the central portion in the Y direction of the substrate surface 11 than the second side wall portion 21b. In other words, the electronic component 100 is disposed in a portion of the second common contact surface portion 30d closer to the first common contact surface portion 30c in the Y direction. Thus, the semiconductor light-emitting element 80 and the electronic component 100 are disposed on both sides in the Y direction with respect to the central portion in the Y direction on the substrate surface 11, while the Y-direction distance between the two is short.

[0192] At least a part of the semiconductor light-emitting element 80 is disposed at a position closer to the electronic component 100 than the element contact surface 50a on the first common contact surface portion 30c. In the present embodiment, the semiconductor light-emitting element 80 is disposed closer to the second side wall portion 21b than the element contact surface 50a in the Y direction. More specifically, the semiconductor light-emitting element 80 is disposed closer to the second side wall portion 21b than the central portion of the element contact surface 50a in the Y direction. A part of the semiconductor light-emitting element 80 is disposed closer to the second side wall portion 21b than the element contact surface 50a in the Y direction. When viewed from the X direction, the semiconductor light-emitting element 80 overlaps the element contact surface 50a and the first drive contact surface portion 60c. More specifically, in the present embodiment, the central portion of the semiconductor light-emitting element 80 in the Y direction is closer to the first drive contact surface portion 60c than the insulating portion 13 between the element contact surface 50a and the first drive contact surface portion 60c.

[0193] As shown in FIG. 17, the element lower surface electrode 92 of the semiconductor light-emitting element 80 is die-bonded to the first common contact surface portion 30c by the conductive bonding material P1 in the same manner as in the first embodiment. Thereby, the element lower surface electrode 92 is joined to the common conductive portion 30B.

[0194] As shown in FIG. 18, the second drive electrode 103 of the electronic component 100 is die-bonded to the second common contact surface portion 30d by the conductive bonding material P2 in the same manner as in the first embodiment. Thereby, the second drive electrode 103 is joined to the common conductive portion 30B. The element lower surface electrode 92 and the second drive electrode 103 are electrically connected by the common conductive portion 30B. In the present embodiment, the conductive bonding material P2 is made of an Ag paste, and the Ag content of the Ag paste is increased. Thereby, the heat dissipation property from the electronic component 100 to the common conductive portion 30B is improved.

[0195] As shown in FIG. 15, the upper element electrode 91 of the semiconductor light-emitting element 80 is connected to the element contact surface 50a by a plurality of wires W1, similar to the first embodiment. In other words, each of the plurality of wires W1 is wire-bonded to the upper element electrode 91 and the element contact surface 50a, respectively. Thereby, the upper element electrode 91 and the element conductive portion 50B are electrically connected. The number of the wires W1 is not particularly limited, and in the illustrated example, five wires W1 are provided. Also, in the illustrated example, the first bonding portion of the wire W1 is provided on the upper element electrode 91, and the second bonding portion is provided on the element contact surface 50a. The first bonding portions of the five wires W1 are arranged to be spaced apart from each other in the Y direction on the upper element electrode 91, and the second bonding portions are arranged to be spaced apart from each other in the Y direction on the element contact surface 50a. This second bonding portion is arranged at the end portion on the side of the third side wall portion 21c of both end portions in the X direction of the element contact surface 50a. The second bonding portion is arranged on the side of the second side wall portion 21b rather than the recess 55 in the Y direction of the element contact surface 50a, and is arranged so as not to protrude beyond the recess 55 on the side of the fourth side wall portion 21d in the X direction. In the illustrated example, the second bonding portion is arranged on the side of the third side wall portion 21c rather than the central portion in the X direction of the recess 55, and is arranged so as to overlap the recess 55 when viewed from the Y direction.

[0196] As shown in FIGS. 14 and 15, the first bonding portions and the second bonding portions of the five wires W1 are arranged spaced apart from each other in the X direction in a state shifted in the Y direction. In the illustrated example, when viewed from the X direction, the first bonding portion closest to the first side wall portion 21a among the five first bonding portions overlaps with the second bonding portion closest to the second side wall portion 21b among the five second bonding portions. For this reason, in plan view, the wire W1 extends obliquely away from the electronic component 100 as it goes from the element upper surface electrode 91 toward the element contact surface 50a. In other words, in plan view, the wire W1 extends obliquely toward the first side wall portion 21a as it goes from the first bonding portion toward the second bonding portion. In plan view, the plurality of wires W1 are formed to be parallel to each other.

[0197] In the illustrated example, the element upper surface electrode 91 is formed at the end of the element upper surface 80a closer to the element conductive portion 50B among the both ends in the X direction. For this reason, the length of the wire W1 can be shortened.

[0198] The first drive electrode 101 of the electronic component 100 is connected to the drive contact surface 60a by a plurality of wires W2, similarly to the first embodiment. In other words, each of the plurality of wires W2 is wire-bonded to the first drive electrode 101 and the drive contact surface 60a, respectively. Thereby, the first drive electrode 101 and the drive conductive portion 60B are electrically connected. The number of the wires W2 is not particularly limited, and in the illustrated example, six wires W2 are provided. Also, in the illustrated example, the first bonding portion of the wire W2 is provided on the first drive electrode 101, and the second bonding portion is provided on the drive contact surface 60a. The second bonding portions of the six wires W2 are arranged spaced apart from each other in the Y direction.

[0199] Wire W2 is connected to the second drive contact surface portion 60d. In other words, the second bonding portion is provided on the second drive contact surface portion 60d. More specifically, the second bonding portion is disposed on the second side wall portion 21b side rather than the recess 65 of the drive contact surface 60a in the Y direction. Also, the second bonding portion is disposed on the second common contact surface portion 30d side (the third side wall portion 21c side) rather than the central portion of the second drive contact surface portion 60d in the X direction.

[0200] Of the plurality of wires W2, the two most separated wires, that is, the wires W2 disposed at both ends in the Y direction among the plurality of wires W2, are connected to the first drive electrode 101 and the second drive contact surface portion 60d such that the second drive contact surface portion 60d side is farther away than the first drive electrode 101 side in a plan view. In other words, the Y-direction interval on the second drive contact surface portion 60d side in the wires W2 disposed at both ends in the Y direction among the plurality of wires W2 is larger than the Y-direction interval on the first drive electrode 101 side. In the present embodiment, in a plan view, the plurality of wires W2 are formed such that the gap between adjacent wires W2 gradually increases as going from the first bonding portion to the second bonding portion. In one example, the distance between the second bonding portions of the wires W2 at both ends of the plurality of wires W2 in the Y direction is larger than the length of the electronic component 100 in the Y direction.

[0201] In the illustrated example, the length of wire W2 is longer than the length of wire W1. Also, the diameter of wire W2 is larger than the diameter of wire W1. Also, the number of wires W2 is larger than the number of wires W1. According to this configuration, the heat dissipation performance of the electronic component 100 can be improved. However, it is not limited thereto, and the diameter of wire W2 may be equal to or less than the diameter of wire W1. Also, the number of wires W2 and the number of wires W1 may be the same, or the number of wires W2 may be less than the number of wires W1.

[0202] The control electrode 102 of the electronic component 100 is connected to the control contact surface 70a by the wire W3, similar to the first embodiment. In other words, the wire W3 is wire-bonded to each of the control electrode 102 and the control contact surface 70a. The number of the wires W3 is not particularly limited, and in the illustrated example, it is one. Also, in the illustrated example, the first bonding portion of the wire W3 is provided on the control electrode 102, and the second bonding portion is provided on the control contact surface 70a. Also in this embodiment, the control electrode 102 is formed at the end of the upper surface 100a in the X direction that is closer to the control contact surface 70a among both ends. Therefore, it is possible to shorten the length of the wire W3.

[0203] The electronic component 100 is covered with a sealing resin 140. The sealing resin 140 is covered with a coating agent 141 for suppressing the vulcanization of the first drive electrode 101 and the second drive electrode 103 of the electronic component 100. Also, the sealing resin 140 and the coating agent 141 respectively cover the first bonding portions connected to the first drive electrode 101 of the plurality of wires W2 and the first bonding portions connected to the control electrode 102 of the wire W3. The sealing resin 140 is made of, for example, a light-shielding resin material, and an epoxy resin is used in this embodiment. Therefore, it can be said that the sealing resin 140 is a light-shielding resin (light-shielding member) that shields the electronic component 100 from the outside. The coating agent 141 uses, for example, a coating agent composed of a fluoropolymer and a glass system.

[0204] As shown in FIGS. 14 and 15, the coating agent 141 (sealing resin 140) protrudes from the second common contact surface portion 30d. A part of the coating agent 141 (sealing resin 140) covers the first common contact surface portion 30c and the first drive contact surface portion 60c. The coating agent 141 (sealing resin 140) is provided at a distance from the semiconductor light-emitting element 80. Note that a structure in which the coating agent 141 is further covered with the sealing resin 140 in a state where the electronic component 100 is covered with the coating agent 141 may be employed.

[0205] In this embodiment, the capacitor 120 is disposed so as to straddle the element contact surface 50a and the first drive contact surface portion 60c. An example of the capacitor 120 is a tantalum capacitor. Note that a multilayer ceramic capacitor may be used as the capacitor 120. The capacitor 120 is disposed on the fourth side wall portion 21d side rather than the recess 55 of the element contact surface 50a in the X direction. Since the recess 55 serves as a mark for the second bonding portion which is the connection end portion of the element contact surface 50a in the wire W1, it can be said that the capacitor 120 is disposed on the fourth side wall portion 21d side rather than the second bonding portion. Further, the capacitor 120 is disposed so as not to protrude beyond the recess 65 of the drive contact surface 60a in the X direction. The capacitor 120 is disposed in such a direction that the first electrode 121 and the second electrode 122 are arranged in the Y direction. In other words, as shown in FIGS. 14 and 15, the capacitor 120 is disposed in such a direction that the longitudinal direction is the Y direction and the short side direction is the X direction. In this embodiment, the first electrode 121 is connected to the element contact surface 50a, and the second electrode 122 is connected to the first drive contact surface portion 60c. That is, the second bonding portion which is the portion connected to the second drive contact surface portion 60d in the wire W2 and the second electrode 122 are partitioned by the recess 65.

[0206] As shown in FIGS. 14 and 15, the second electrode 122 of the capacitor 120 is die-bonded to the first drive contact surface portion 60c by a conductive bonding material P3 such as a paste or solder containing a metal such as Ag. Similarly, the first electrode 121 of the capacitor 120 is also die-bonded to the element contact surface 50a by the conductive bonding material P3. As described above, since the second bonding portion of the wire W2 and the second electrode 122 are partitioned by the recess 65, it is possible to suppress the conductive bonding material P3 joining the second electrode 122 and the first drive contact surface portion 60c from spreading and adhering to the second bonding portion of the wire W2. The portion of the conductive bonding material P3 that protrudes from the first electrode 121 when joining the element contact surface 50a and the first electrode 121 is provided so as to be located between the recess 55 and the capacitor 120 in the X direction. That is, the recess 55 has a function of defining the range in which the conductive bonding material P3 protrudes from the first electrode 121. Thereby, it is possible to manufacture the semiconductor light-emitting device 1B such that the conductive bonding material P3 and the second bonding portion of the wire W1 do not come into contact with each other.

[0207] As shown in FIG. 19, the height TM from the substrate surface 11 to the upper surface 100a of the electronic component 100 is lower than the height TV from the substrate surface 11 to the element upper surface 80a of the semiconductor light-emitting element 80. In other words, the upper surface 100a of the electronic component 100 is located below (on the substrate surface 11 side) the element upper surface 80a of the semiconductor light-emitting element 80. In FIG. 19, for convenience of explanation, the encapsulating resin 140 and the coating agent 141, which will be described later, are omitted. As shown in FIG. 18, the height TC from the substrate surface 11 to the upper surface of the capacitor 120 is higher than the height TV (see FIG. 19) from the substrate surface 11 to the element upper surface 80a of the semiconductor light-emitting element 80. Also, the height TC is higher than the height TM (see FIG. 19) from the substrate surface 11 to the upper surface 100a of the electronic component 100.

[0208] As shown in FIGS. 24 to 26, the case 20B has an accommodation space 23 for accommodating the semiconductor light-emitting element 80, the electronic component 100, and the capacitor 120. The opening 22a communicates the accommodation space 23 with the outside of the case 20B. As shown in FIG. 23, the opening 22a is formed closer to the third side wall portion 21c than the central portion of the lid 22 in the X direction. Also, the opening 22a is formed closer to the first side wall portion 21a than the central portion of the lid 22 in the Y direction. As shown in FIGS. 24 and 25, the thickness of the lid 22 is different in the Y direction. Specifically, the thickness of the first portion 22b, which is the portion of the lid 22 at the same position as the opening 22a in the Y direction and on the side of the first side wall portion 21a from the opening 22a, is thinner than the thickness of the second portion 22c, which is the portion of the lid 22 on the side of the second side wall portion 21b from the opening 22a. In other words, the thickness of the second portion 22c of the lid 22 is thicker than the thickness of the first portion 22b. As shown in FIG. 26, in a plan view, the shape of the accommodation space 23 formed by the inner surfaces of the side wall portions 21a to 21d is substantially square. Also, the opening 22a is formed adjacent to the third side wall portion 21c.

[0209] As shown in FIG. 19, the semiconductor light-emitting element 80 is disposed at a position corresponding to the first portion 22b of the lid 22, and the electronic component 100 is disposed at a position corresponding to the second portion 22c of the lid 22. Since the second portion 22c of the lid 22 is formed so as to hang down from the portion of the periphery of the opening 22a on the side of the second side wall portion 21b, even if the light from the semiconductor light-emitting element 80 is reflected by the light diffusion plate 130, the reflected light is less likely to irradiate the electronic component 100.

[0210] (Manufacturing method) Next, with reference to FIGS. 27 to 36, the manufacturing method of the semiconductor light-emitting device 1B will be described. Note that the two-dot chain line rectangles in FIGS. 28, 30, and 32 indicate the outline of the substrate 10B.

[0211] As shown in FIGS. 27 to 29, the method for manufacturing the semiconductor light-emitting device 1B includes a step of preparing a lead frame 800. The lead frame 800 is a metal plate made of Cu. The lead frame 800 is formed, for example, by etching a Cu plate. The lead frame 800 is provided with conductive parts 830B, 850B, 860B, 870B corresponding to a plurality of semiconductor light-emitting devices 1B. FIG. 28 shows the conductive parts 830B, 850B, 860B, 870B corresponding to four semiconductor light-emitting devices 1B. The plurality of conductive parts 830B, 850B, 860B, 870B are supported by the lead frame 800 by suspension leads 880. Note that the shapes of the plurality of conductive parts 830B, 850B, 860B, 870B are the same as the shapes of the plurality of conductive parts 30B, 50B, 60B, 70B shown in FIG. 14 except for the configuration in which the suspension leads 880 are not cut. That is, the common conductive part 830B corresponds to the common conductive part 30B, the element conductive part 850B corresponds to the element conductive part 50B, the drive conductive part 860B corresponds to the drive conductive part 60B, and the control conductive part 870B corresponds to the control conductive part 70B. For example, flanges are formed on the plurality of conductive parts 830B, 850B, 860B, 870B in a cross-sectional view cut along a plane in the Z direction by etching. In one example, as shown in FIG. 29, the common conductive part 830B is provided with a flange 836, and the drive conductive part 860B is provided with a flange 866. As shown in FIG. 29, the suspension lead 880 extends from the flange 866 and has the same thickness as the thickness of the flange 866.

[0212] As shown in FIGS. 30 and 31, the method for manufacturing the semiconductor light-emitting device 1B includes a step of molding an insulating portion 813 on a lead frame 800. The insulating portion 813 is made of a resin material having electrical insulation properties. In the present embodiment, an epoxy resin is used for the insulating portion 813. As shown by the hatching in FIG. 30, the insulating portion 813 is formed so as to fill through holes formed in the lead frame 800. As shown in FIG. 30, the insulating portion 813 is provided so as to surround the peripheries of the respective conductive portions 830B, 850B, 860B, 870B. Thereby, in portions other than the suspension lead 880, the insulating portion 813 partitions the respective conductive portions 830B, 850B, 860B, 870B. As shown in FIG. 31, the insulating portion 813 enters the back surface side of the flange 866 and the suspension lead 880 to form a back surface side half-insulating portion 813L. Further, the insulating portion 813 enters the recesses of the plurality of conductive portions 830B, 850B, 860B, 870B to form a front surface side half-insulating portion 813U. The recesses of the plurality of conductive portions 830B, 850B, 860B, 870B correspond to the recesses 35a to 35e, 55, 65 (both see FIG. 14) of the plurality of conductive portions 30B, 50B, 60B, 70B. The front surface side half-insulating portion 813U corresponds to the front surface side half-insulating portion 13U (see FIG. 14) of the substrate 10B.

[0213] As shown in FIG. 32, the manufacturing method of the semiconductor light-emitting device 1B includes a step of mounting the semiconductor light-emitting element 80 on the lead frame 800 and a step of mounting the electronic component 100 on the lead frame 800. Specifically, the semiconductor light-emitting element 80 is die-bonded to the common conductive portion 830B with the conductive bonding material P1, and the electronic component 100 is die-bonded to the common conductive portion 830B with the conductive bonding material P2. More specifically, first, the conductive bonding material P1 is applied to the first common contact surface portion 830c of the common conductive portion 830B, and the conductive bonding material P2 is applied to the second common contact surface portion 830d of the common conductive portion 830B. As the conductive bonding materials P1 and P2, an Ag paste is used. Next, the semiconductor light-emitting element 80 is placed on the conductive bonding material P1, and the electronic component 100 is placed on the conductive bonding material P2. At this time, the element lower surface electrode 92 (see FIG. 17) of the semiconductor light-emitting element 80 is in contact with the conductive bonding material P1, and the first drive electrode 101 (see FIG. 18) of the electronic component 100 is in contact with the conductive bonding material P2. Then, for example, the semiconductor light-emitting element 80 and the first common contact surface portion 830c are joined via the conductive bonding material P1 by a reflow process, and the electronic component 100 and the second common contact surface portion 830d are joined via the conductive bonding material P2.

[0214] As shown in Fig. 32, the manufacturing method of the semiconductor light-emitting device 1B includes a step of forming wires W1 to W3. In the present embodiment, the wires W1 to W3 are respectively formed by a wire bonding apparatus. Specifically, after forming a first bonding portion on the element upper surface electrode 91 of the semiconductor light-emitting element 80, the wire bonding apparatus moves to the element conductive portion 850B and forms a second bonding portion on the element contact surface 850a. Thereby, the wire W1 is formed. The second bonding portion of the wire W1 is formed at a position substantially the same as the position in the X direction of the recess 855 formed in the element conductive portion 850B. That is, the recess 855 serves as a mark for the formation position of the second bonding portion of the wire W1. After forming a first bonding portion on the first drive electrode 101 of the electronic component 100, the wire bonding apparatus moves to the drive conductive portion 860B and forms a second bonding portion on the second drive contact surface portion 860d. Thereby, the wire W2 is formed. After forming a first bonding portion on the control electrode 102 of the electronic component 100, the wire bonding apparatus moves to the control conductive portion 870B and forms a second bonding portion on the control contact surface 870a. Thereby, the wire W3 is formed. Note that the formation order of the wires W1 to W3 is arbitrary. Note that the element contact surface 850a corresponds to the element contact surface 50a (see Fig. 14) of the substrate 10B, the second drive contact surface portion 860d corresponds to the second drive contact surface portion 60d (see Fig. 14) of the substrate 10B, and the control contact surface 870a corresponds to the control contact surface 70a (see Fig. 14) of the substrate 10B.

[0215] As shown in FIG. 33, the method for manufacturing the semiconductor light-emitting device 1B includes a step of forming a substrate 10B. Specifically, for example, the insulating portion 813 and the suspension lead 880 of the lead frame 800 are cut along the two-dot chain line in FIG. 32 by a dicing blade. In the present embodiment, the dicing blade cuts from the front surface 801 to the back surface 802 (both are shown in FIG. 31) of the lead frame 800. Along with this, the protruding portions 34a to 34f, 54a to 54c, 64a to 64c, 74a, and 74b are formed. At this time, since the suspension lead 880 is provided on the front surface 801 side rather than the back surface 802 side, and the insulating portion 813 is provided on the back surface 802 side of the suspension lead 880, even if a burr occurs when the suspension lead 880 is cut by the dicing blade, the burr is less likely to protrude to the back surface 802 side.

[0216] As shown in FIG. 34, the method for manufacturing the semiconductor light-emitting device 1B includes a step of mounting a capacitor 120. Specifically, the capacitor 120 is die-bonded so as to straddle the element conductive portion 50B and the drive conductive portion 60B by a conductive bonding material P3. More specifically, first, the conductive bonding material P3 is applied to each of the element contact surface 50a of the element conductive portion 50B and the first drive contact surface portion 60c of the drive conductive portion 60B. As the conductive bonding material P3, for example, an Ag paste is used. Next, the capacitor 120 is placed on the conductive bonding material P3. At this time, the first electrode 121 of the capacitor 120 is in contact with the conductive bonding material P3 of the element conductive portion 50B, and the second electrode 122 is in contact with the conductive bonding material P3 of the drive conductive portion 60B. Then, the capacitor 120 is joined to the element contact surface 50a and the first drive contact surface portion 60c via the conductive bonding material P3 by, for example, a reflow process. At this time, the application of the conductive bonding material P3 and the placement of the capacitor 120 are performed such that the protruding portion from the first electrode 121 of the conductive bonding material P3 is located between the recess 55 and the first electrode 121.

[0217] As shown in FIG. 35, the manufacturing method of the semiconductor light-emitting device 1B includes a step of covering the electronic component 100 with a sealing resin 140 and a coating agent 141. In the present embodiment, after applying the sealing resin 140 so as to cover the electronic component 100 and the first bonding portions of the wires W2 and W3, the sealing resin 140 is cured by heating or ultraviolet irradiation. Next, the coating agent 141 is applied so as to cover the sealing resin 140. As the sealing resin 140, a light-shielding resin material is used, and an epoxy resin is used in the present embodiment. As the coating agent 141, a coating agent composed of a fluoropolymer and a glass system is used.

[0218] As shown in FIG. 36, the manufacturing method of the semiconductor light-emitting device 1B includes a step of attaching a case 20B to which a light diffusing plate 130 is attached to a substrate 10B. In the present embodiment, a light-shielding adhesive P4 is applied to the end surfaces of the side wall portions 21a to 21d of the case 20B, and the case 20B is attached to the substrate surface 11 of the substrate 10B. As the adhesive P4, a material having electrical insulation is used. In the present embodiment, as the adhesive P4, an adhesive mainly composed of a black epoxy resin is used. Through the above steps, the semiconductor light-emitting device 1B is manufactured.

[0219] (Electronic device using the semiconductor light-emitting device) FIGS. 37 and 38 are a plan view and a circuit diagram showing an example of an electronic device 2B using the semiconductor light-emitting device 1B. Examples of the electronic device 2B include a sensor for measuring a distance.

[0220] The electronic device 2B includes a semiconductor light-emitting device 1B, a circuit board 110 on which the semiconductor light-emitting device 1B is mounted, and wiring patterns 111 to 114 formed on the circuit board 110. The arrangement configuration of the wiring patterns 111 to 114 is the same as the arrangement configuration of the wiring patterns 111 to 114 (see FIGS. 9 and 10) in the first embodiment.

[0221] A part of the common conductive part 30B is arranged at a position overlapping with the first wiring pattern 111. The first common contact back surface part 30e and the first wiring pattern 111 are joined by solder or the like. Thereby, the first wiring pattern 111 is electrically connected to the element bottom electrode 92 which is the cathode electrode of the semiconductor light-emitting element 80 and the second drive electrode 103 which is the drain electrode of the electronic component 100.

[0222] The element conductive part 50B is arranged at a position overlapping with the second wiring pattern 112. The width of the second wiring pattern 112 in the present embodiment is smaller than the width of the second wiring pattern 112 in the first embodiment. The element contact back surface 50b and the second wiring pattern 112 are joined by solder or the like. Thereby, the second wiring pattern 112 is electrically connected to the element upper electrode 91 which is the anode electrode of the semiconductor light-emitting element 80 and the first electrode 121 of the capacitor 120.

[0223] The drive conductive part 60B is arranged at a position overlapping with the third wiring pattern 113. The width of the third wiring pattern 113 in the present embodiment is larger than the width of the third wiring pattern 113 in the first embodiment. The first drive contact back surface part 60e and the second drive contact back surface part 60f and the third wiring pattern 113 are joined by solder or the like. Thereby, the third wiring pattern 113 is electrically connected to the first drive electrode 101 which is the source electrode of the electronic component 100 and the second electrode 122 of the capacitor 120. Note that the width of the third wiring pattern 113 may be the same as the width of the third wiring pattern 113 in the first embodiment. In this case, the third wiring pattern 113 is joined to the second drive contact back surface part 60f by solder or the like. Note that the third wiring pattern 113 may be joined to the first drive contact back surface part 60e by solder or the like instead of the second drive contact back surface part 60f.

[0224] The control conductive part 70B is arranged at a position overlapping with the fourth wiring pattern 114. The control contact back surface 70b and the fourth wiring pattern 114 are joined by solder or the like. Thereby, the fourth wiring pattern 114 is electrically connected to the control electrode 102 of the electronic component 100.

[0225] As described above, in the present embodiment, a plurality of contact back surfaces 30b, 50b, 60b, 70b constitute the external terminals of the semiconductor light-emitting device 1B. In the illustrated example, a part of the first common contact back surface part 30e and the second common contact back surface part 30f are each mounted on the heat dissipation pattern 115 formed on the circuit board 110 by solder or the like. The width of the heat dissipation pattern 115 of the present embodiment is smaller than the width of the heat dissipation pattern 115 of the first embodiment. The heat dissipation pattern 115 is not joined to the element contact back surface 50b and the first drive contact back surface part 60e. Therefore, the heat of the semiconductor light-emitting element 80 and the electronic component 100 is transmitted from each common contact back surface part 30e, 30f to the circuit board 110. Thereby, the heat dissipation performance of the semiconductor light-emitting device 1B can be improved.

[0226] In the present embodiment, the semiconductor light-emitting device 1B incorporates a capacitor 120. Since the capacitor 120 is electrically connected to the third wiring pattern 113 and the fourth wiring pattern 114 as described above, as shown in FIG. 38, it is connected in parallel to the semiconductor light-emitting element 80 and the electronic component 100 connected in series.

[0227] According to the semiconductor light-emitting device 1B of the present embodiment, in addition to the effects of (1-1) to (1-11) and (1-13) of the first embodiment, the following effects can be obtained. (2-1) The common conductive part 30B, the element conductive part 50B, the drive conductive part 60B, and the control conductive part 70B are each made of a lead frame and are exposed on the substrate front surface 11 and the substrate back surface 12. According to this configuration, since the volumes of the common conductive part 30B, the element conductive part 50B, the drive conductive part 60B, and the control conductive part 70B are large, the heat dissipation of each of the common conductive part 30B, the element conductive part 50B, the drive conductive part 60B, and the control conductive part 70B can be improved.

[0228] (2-2) The common contact surface 30a has a first common contact surface part 30c and a second common contact surface part 30d. The second common contact surface part 30d is disposed between the drive conductive part 60B and the control conductive part 70B and extends toward the fourth side wall part 21d in the X direction from the first common contact surface part 30c. The first common contact surface part 30c extends in the Y direction from the second common contact surface part 30d. The semiconductor light emitting element 80 is disposed closer to the second common contact surface part 30d in the first common contact surface part 30c. According to this configuration, the conductive path between the semiconductor light emitting element 80 and the electronic component 100 can be shortened. Therefore, the parasitic capacitance based on the conductive path between the semiconductor light emitting element 80 and the electronic component 100 can be reduced.

[0229] (2-3) The electronic component 100 is disposed closer to the first common contact surface part 30c in the second common contact surface part 30d. According to this configuration, the conductive path between the semiconductor light emitting element 80 and the electronic component 100 can be further shortened. Therefore, the parasitic capacitance based on the conductive path between the semiconductor light emitting element 80 and the electronic component 100 can be further reduced.

[0230] (2-4) The common contact surface 30a is larger than the drive contact surface 60a and the control contact surface 70a. According to this configuration, the heat dissipation of the common conductive part 30B can be improved.

[0231] (2-5) When viewed from the X direction, a part of the semiconductor light-emitting element 80 is disposed at a position closer to the electronic component 100 than the element contact surface 50a on the first common contact surface portion 30c. The element upper surface electrode 91 of the semiconductor light-emitting element 80 and the element contact surface 50a are connected by a plurality of wires W1, and the plurality of wires W1 obliquely extend so as to be separated from the electronic component 100 as they go from the element upper surface electrode 91 toward the element contact surface 50a. According to this configuration, even if the semiconductor light-emitting element 80 and the element contact surface 50a are displaced in the Y direction by using the plurality of wires W1, an electrical connection between the element upper surface electrode 91 and the element conductive portion 50B can be easily realized.

[0232] (2-6) The drive contact surface 60a has a first drive contact surface portion 60c and a second drive contact surface portion 60d. The first drive contact surface portion 60c extends in the X direction, and the second drive contact surface portion 60d extends in the Y direction. According to this configuration, it becomes easier to connect the second electrode 122 of the capacitor 120 to the first drive contact surface portion 60c, and it becomes easier to connect a plurality of wires W2 to the second drive contact surface portion 60d.

[0233] Further, the drive contact surface 60a has a recessed region 60r that is recessed with respect to the first drive contact surface portion 60c such that the second drive contact surface portion 60d has a shorter length in the X direction than the first drive contact surface portion 60c. The second common contact surface portion 30d enters the recessed region 60r. According to this configuration, since the length of the second common contact surface portion 30d in the X direction can be increased, the heat dissipation of the electronic component 100 can be improved.

[0234] (2-7) In a plan view, the plurality of wires W2 are arranged in the Y direction. According to this configuration, since the second drive contact surface portion 60d extends in the Y direction, a space for forming the second bonding portion of each of the plurality of wires W2 can be secured. Therefore, the second bonding portion of each of the plurality of wires W2 can be easily formed.

[0235] (2-8) When the distance between two wires W2 that constitute the most separated combination among the plurality of wires W2 increases, the inductance between the first drive electrode 101 and the second drive contact surface portion 60d is reduced. In this regard, according to the present semiconductor light-emitting device 1B, in a plan view, the interval between the wires W2 that are the most separated in the Y direction among the plurality of wires W2 widens as it goes from the first drive electrode 101 of the electronic component 100 toward the second drive contact surface portion 60d. Thereby, since the distance between the two wires W2 that constitute the most separated combination among the plurality of wires W2 can be increased, the inductance between the first drive electrode 101 and the second drive contact surface portion 60d can be reduced.

[0236] (2-9) The first common contact back surface portion 30e is larger than the element contact back surface 50b, the drive contact back surface 60b, and the control contact back surface 70b. According to this configuration, the heat dissipation of the semiconductor light-emitting element 80 can be improved.

[0237] (2-10) The first common contact back surface portion 30e is larger than the second common contact back surface portion 30f. According to this configuration, the heat dissipation of the semiconductor light-emitting element 80 can be improved.

[0238] (2-11) The first common contact surface portion 30c extends from the second common contact surface portion 30d toward the third side wall portion 21c in the X direction. According to this configuration, since the length of the first common contact surface portion 30c in the X direction can be increased, the heat dissipation of the semiconductor light-emitting element 80 can be improved.

[0239] (2-12) The common conductive part 30B is provided with a concave part 35a, a pair of concave parts 35b, a pair of concave parts 35c, a concave part 35d, and a concave part 35e. The insulating part 13 has entered into each of these concave parts 35a to 35e. According to this configuration, it becomes difficult for the insulating part 13 and the common conductive part 30B to peel off. In addition, the concave parts 35a to 35e are each provided on the common contact surface 30a, and the surface-side half insulating part 13U that does not penetrate in the Z direction has entered into the concave parts 35a to 35e. According to this configuration, since the surface-side half insulating part 13U that has entered into the concave parts 35a to 35e overlaps with the common contact back surface 30b when viewed from the Z direction, the common conductive part 30B can be restricted from moving toward the case 20B side in the Z direction with respect to the insulating part 13.

[0240] (2-13) The element conductive part 50B is provided with a concave part 55. The insulating part 13 has entered into the concave part 55. According to this configuration, it becomes difficult for the insulating part 13 and the element conductive part 50B to peel off. In addition, the concave part 55 is provided on the element contact surface 50a, and the surface-side half insulating part 13U that does not penetrate in the Z direction has entered into the concave part 55. According to this configuration, since the surface-side half insulating part 13U that has entered into the concave part 55 overlaps with the element contact back surface 50b when viewed from the Z direction, the element conductive part 50B can be restricted from moving toward the case 20B side in the Z direction with respect to the insulating part 13.

[0241] (2-14) The drive conductive part 60B is provided with a concave part 65. The insulating part 13 has entered into the concave part 65. According to this configuration, it becomes difficult for the insulating part 13 and the drive conductive part 60B to peel off. In addition, the concave part 65 is provided on the drive contact surface 60a, and the surface-side half insulating part 13U that does not penetrate in the Z direction has entered into the concave part 65. According to this configuration, since the surface-side half insulating part 13U that has entered into the concave part 65 overlaps with the drive contact back surface 60b when viewed from the Z direction, the drive conductive part 60B can be restricted from moving toward the case 20B side in the Z direction with respect to the insulating part 13.

[0242] (2-15) The recess 65 is provided between the first drive contact surface portion 60c and the second drive contact surface portion 60d. According to this configuration, it becomes difficult for the conductive bonding material P3 for connecting the capacitor 120 to the first drive contact surface portion 60c to enter the second drive contact surface portion 60d side. Therefore, it becomes difficult for the conductive bonding material P3 to contact the second bonding portion of the wire W2.

[0243] (2-16) A recess 35f is provided between the back surface portion 30e of the first common contact and the back surface portion 30f of the second common contact. The back surface side half insulating portion 13L has entered the recess 35f. The back surface side half insulating portion 13L of the recess 35f penetrates the common contact back surface 30b in the X direction and is connected to the insulating portions 13 penetrating the substrate 10B provided on both the left and right sides of the common contact back surface 30b. According to this configuration, since the insulating portions 13 provided on both the left and right sides of the common contact back surface 30b are integrated by the back surface side half insulating portion 13L of the recess 35f, the strength of the insulating portion 13 around the common conductive portion 30B is improved. In addition, the back surface side half insulating portion 13L of the recess 35f supports the common conductive portion 30B in the Z direction, and the contact area between the insulating portion 13 and the common conductive portion 30B is increased by the back surface side half insulating portion 13L of the recess 35f. Therefore, it becomes difficult for the common conductive portion 30B to move toward the substrate back surface 12 side in the Z direction.

[0244] (2-17) A recess 65a is provided between the back surface portion 60e of the first drive contact and the back surface portion 60f of the second drive contact. The back surface side half-insulating portion 13L enters the recess 65a. The back surface side half-insulating portion 13L of the recess 65a penetrates the drive contact back surface 60b in the X direction and is connected to the insulating portions 13 that penetrate the substrate 10B and are provided on both the left and right sides of the drive contact back surface 60b. According to this configuration, since the insulating portions 13 provided on both the left and right sides of the drive contact back surface 60b are integrated by the back surface side half-insulating portion 13L of the recess 65a, the strength of the insulating portion 13 around the drive conductive portion 60B is improved. In addition, the back surface side half-insulating portion 13L of the recess 65a supports the drive conductive portion 60B in the Z direction, and the contact area between the insulating portion 13 and the drive conductive portion 60B is increased by the back surface side half-insulating portion 13L of the recess 65a. Therefore, it becomes difficult for the drive conductive portion 60B to move toward the substrate back surface 12 side in the Z direction.

[0245] (2-18) Flanges 36, 56, 66, and 76 are provided on each of the common conductive portion 30B, the element conductive portion 50B, the drive conductive portion 60B, and the control conductive portion 70B. An insulating portion 13 (back surface side half-insulating portion 13L) enters between these flanges 36, 56, 66, 76 and the substrate back surface 12. According to this configuration, each of the common conductive portion 30B, the element conductive portion 50B, the drive conductive portion 60B, and the control conductive portion 70B can be restricted from moving in the Z direction to the side opposite to the case 20B with respect to the insulating portion 13.

[0246] (2-19) The electronic component 100 is covered with a light-shielding resin material (sealing resin 140). According to this configuration, even if the light from the semiconductor light-emitting element 80 is reflected by the light diffusing plate 130 or the like and irradiated toward the electronic component 100, the reflected light does not reach the electronic component 100 due to the sealing resin 140, so malfunction of the electronic component 100 can be suppressed.

[0247] (2-20) The silver content of the conductive bonding material P2, which is an Ag paste for connecting the electronic component 100 and the common conductive part 30B, is increased. As a result, heat can be efficiently dissipated from the electronic component 100 to the common conductive part 30B. On the other hand, the sulfur resistance of the conductive bonding material P2 decreases. Therefore, in the present embodiment, the encapsulating resin 140 is covered with a coating agent 141 that suppresses sulfurization. According to this configuration, sulfurization of the conductive bonding material P2, the second driving electrode 103, the control electrode 102, and the first driving electrode 101 can be suppressed. Therefore, the sulfur resistance characteristics of the conductive bonding material P2, the second driving electrode 103, the control electrode 102, and the first driving electrode 101 can be improved.

[0248] (2-21) The semiconductor light-emitting device 1B includes a capacitor 120. According to this configuration, since it is not necessary to arrange the capacitor 120 outside the semiconductor light-emitting device 1B, or the number of capacitors 120 arranged outside the semiconductor light-emitting device 1B can be reduced, the space saving of the electronic device 2B can be achieved.

[0249] (2-22) The semiconductor light-emitting element 80 is arranged offset toward the third side wall portion 21c side in the X direction with respect to the electronic component 100. A capacitor 120 is arranged on the fourth side wall portion 21d side in the X direction with respect to the semiconductor light-emitting element 80. The electronic component 100 is arranged at the central portion in the X direction of the substrate 10B. The capacitor 120 is arranged on the first side wall portion 21a side in the Y direction with respect to the electronic component 100. According to this configuration, a space for arranging the capacitor 120 can be secured within the accommodation space 23 formed by the case 20B and the substrate 10B without making one of the wires W2 and W3 extremely longer than the other.

[0250] (2-23) An opening 22a is provided in a portion of the lid 22 of the case 20B formed of a light-shielding material that faces the semiconductor light-emitting element 80 in the Z direction, and a light diffusing plate 130 is attached to the lid 22 so as to cover the opening 22a. According to this configuration, portions of the lid 22 other than the portion facing the semiconductor light-emitting element 80 in the Z direction are shielded from light, thereby suppressing the irradiation of light onto the electronic component 100. Therefore, malfunction of the electronic component 100 due to light irradiation can be suppressed.

[0251] (2-24) Protrusions 34a to 34f are provided on the common conductive portion 30B. According to this configuration, since the volume of the common conductive portion 30B increases, the heat dissipation performance of the semiconductor light-emitting element 80 and the electronic component 100 can be improved.

[0252] (2-25) Protrusions 54a to 54c are provided on the element conductive portion 50B. According to this configuration, since the volume of the element conductive portion 50B increases, the heat dissipation performance of the semiconductor light-emitting device 1B can be improved. Further, protrusions 64a to 64c are provided on the drive conductive portion 60B. According to this configuration, since the volume of the drive conductive portion 60B increases, the heat dissipation performance of the semiconductor light-emitting device 1B can be improved. Further, protrusions 74a and 74b are provided on the control conductive portion 70B. According to this configuration, since the volume of the control conductive portion 70B increases, the heat dissipation performance of the semiconductor light-emitting device 1B can be improved.

[0253] (2-26) The height TM from the substrate surface 11 of the electronic component 100 is lower than the height TV from the substrate surface 11 of the semiconductor light-emitting element 80. According to this configuration, even if the light from the semiconductor light-emitting element 80 is reflected by, for example, the light diffusing plate 130, it is less likely to be irradiated onto the electronic component 100. Therefore, malfunction of the electronic component 100 due to light irradiated onto the electronic component 100 can be suppressed.

[0254] [Modified Example] Each of the above embodiments is an example of a form that a semiconductor light-emitting device according to the present disclosure can take, and is not intended to limit the form. The semiconductor light-emitting device according to the present disclosure can take a form different from the forms exemplified in the above embodiments. An example thereof is a form in which a part of the configuration of each of the above embodiments is replaced, changed, or omitted, or a form in which a new configuration is added to each of the above embodiments. Further, the following modification examples can be combined with each other as long as they do not technically conflict. In the following modification examples, parts common to the above embodiments are denoted by the same reference numerals as those in the above embodiments, and the description thereof is omitted.

[0255] ·In the first embodiment, as shown in FIGS. 39 to 42, the substrate 10 may be made of a conductive material such as Cu. In this form, the substrate 10 is provided with an insulating portion 150 that partitions the substrate 10 into a plurality of conductive portions 30, 50, 60, and 70. The insulating portion 150 is formed of an insulating material such as an epoxy resin. The insulating portion 150 is formed, for example, in a stepped shape having a wide portion and a narrow portion. The plurality of conductive portions 30, 50, 60, and 70 are parts of the substrate 10 partitioned from each other in an insulated state by the insulating portion 150.

[0256] The connection conductive portion 40 is electrically connected to the common conductive portion 30 while being insulated from the other conductive portions 50, 60, and 70. Specifically, an insulating portion 150 that penetrates the substrate 10 in the thickness direction is provided between the connection conductive portion 40 and the other conductive portions 50, 60, and 70. On the other hand, as shown in FIGS. 40 and 41, a half-insulating portion 151 that does not penetrate the substrate 10 in the thickness direction is provided between the common conductive portion 30 and the connection conductive portion 40. The half-insulating portion 151 is formed on the back surface 12 side of the substrate and not on the front surface 11 side of the substrate. Therefore, the common conductive portion 30 and the connection conductive portion 40 are electrically connected.

[0257] In the form where a plurality of conductive parts 30, 40, 50, 60, 70 are constituted by a part of the substrate 10 as described above, the common contact surface 30a, the connection contact surface 40a, the element contact surface 50a, the drive contact surface 60a, and the control contact surface 70a are constituted by the substrate surface 11. The common contact surface 30a, the element contact surface 50a, the drive contact surface 60a, and the control contact surface 70a are separated from each other by the insulating part 150. The connection contact surface 40a is separated from the element contact surface 50a, the drive contact surface 60a, and the control contact surface 70a. On the other hand, since the half-insulating part 151 is not formed on the substrate surface 11, the common contact surface 30a and the connection contact surface 40a are continuous.

[0258] Similarly, the common contact back surface 30b, the connection contact back surface 40b, the element contact back surface 50b, the drive contact back surface 60b, and the control contact back surface 70b are constituted by the substrate back surface 12. The common contact back surface 30b, the element contact back surface 50b, the drive contact back surface 60b, and the control contact back surface 70b are separated from each other by the insulating part 150. The common contact back surface 30b, the connection contact back surface 40b, the element contact back surface 50b, the drive contact back surface 60b, and the control contact back surface 70b are separated from each other by the insulating part 150 and the half-insulating part 151.

[0259] ·In the modification examples of FIGS. 39 to 42 related to the first embodiment, the plurality of conductive parts 30, 40, 50, 60, 70 may be provided with protrusions and recesses like the plurality of conductive parts 30B, 50B, 60B, 70B of the second embodiment.

[0260] FIG. 43 is an example of a configuration in which the plurality of conductive parts 30, 40, 50, 60, 70 are provided with protrusions and recesses. In FIG. 43, for the sake of convenience, the outer surface of the frame 21 of the case 20 is shown by a two-dot chain line.

[0261] As shown in FIG. 43, protrusions 34g to 34j are formed on the common contact surface 30a of the common conductive portion 30. The protrusions 34g and 34h are formed at the end of the common contact surface 30a on the side of the first side wall portion 21a. The protrusions 34g and 34h are spaced apart from each other in the X direction. The protrusion 34g is disposed closer to the element conductive portion 50 than the protrusion 34h. The protrusions 34g and 34h protrude from the outer surface of the first side wall portion 21a when viewed from the Z direction. The protrusions 34i and 34j are formed at the end of the common contact surface 30a on the side of the second side wall portion 21b. The protrusions 34i and 34j are spaced apart from each other in the X direction. The protrusion 34i is disposed closer to the drive conductive portion 60 than the protrusion 34j. The protrusions 34i and 34j protrude from the outer surface of the second side wall portion 21b when viewed from the Z direction. Each of the protrusions 34g to 34j is the remaining part after cutting the suspension leads that suspend the common conductive portion 30 in the lead frame. Note that the number of these protrusions can be arbitrarily changed. When viewed from the Z direction, the connection portions between the protrusions 34g to 34j and the common contact surface 30a are each a curved surface.

[0262] Further, recesses 35g and 35h are formed in the common contact surface 30a. In the Y direction, the recesses 35g and 35h are formed between the semiconductor light emitting element 80 and the electronic component 100. The recess 35g is formed at the end of the common contact surface 30a on the side of the fourth side wall portion 21d, and the recess 35h is formed at the end of the common contact surface 30a on the side of the third side wall portion 21c. The recess 35g is recessed in the X direction from the end 31c of the fourth side wall portion 21d of the common contact surface 30a toward the third side wall portion 21c. The bottom of the recess 35g is formed of a curved surface. In the illustrated example, the shape of the recess 35g in plan view has a portion extending in the X direction without changing the width dimension, and is a concave curved surface shape with a narrowing width toward the bottom. The recess 35h is recessed in the X direction from the end 31a of the third side wall portion 21c side of the common contact surface 30a toward the fourth side wall portion 21d. In the illustrated example, the shape of the recess 35h in plan view and the shape of the recess 35g in plan view are symmetrical shapes. The insulating portion 150 enters the recesses 35g and 35h.

[0263] On the connection contact surface 40a of the connection conductive part 40, protruding parts 44a to 44c are formed. The protruding part 44a is formed at the end of the connection contact surface 40a on the side of the first side wall part 21a, and the protruding parts 44b and 44c are formed at the ends of the connection contact surface 40a on the side of the third side wall part 21c. The protruding parts 44b and 44c are spaced apart from each other in the Y direction. The protruding part 44b is formed closer to the first side wall part 21a than the protruding part 44c. The protruding part 44a protrudes from the outer surface of the first side wall part 21a when viewed from the Z direction. The protruding parts 44b and 44c protrude from the outer surface of the third side wall part 21c when viewed from the Z direction. Each of the protruding parts 44a to 44c is the remaining part after cutting the suspension lead that suspends the connection conductive part 40 in the lead frame. Note that the number of these protruding parts can be arbitrarily changed. When viewed from the Z direction, the connection parts between the protruding parts 44a to 44c and the connection contact surface 40a are each a curved surface.

[0264] On the element contact surface 50a of the element conductive part 50, protruding parts 54d to 54f are formed. The protruding part 54d is formed at the end of the element contact surface 50a on the side of the first side wall part 21a, and the protruding parts 54e and 54f are formed at the ends of the element contact surface 50a on the side of the fourth side wall part 21d. The protruding parts 54e and 54f are spaced apart from each other in the Y direction. The protruding part 54e is formed closer to the first side wall part 21a than the protruding part 54f. The protruding part 54d protrudes from the outer surface of the first side wall part 21a when viewed from the Z direction. The protruding parts 54e and 54f protrude from the outer surface of the fourth side wall part 21d when viewed from the Z direction. Each of the protruding parts 54d to 54f is the remaining part after cutting the suspension lead that suspends the element conductive part 50 in the lead frame. Note that the number of these protruding parts can be arbitrarily changed. When viewed from the Z direction, the connection parts between the protruding parts 54d to 54f and the element contact surface 50a are each a curved surface.

[0265] On the drive contact surface 60a of the drive conductive part 60, protrusions 64d to 64f are formed. The protrusion 64d is formed at the end of the drive contact surface 60a on the side of the second side wall part 21b, and the protrusions 64e and 64f are formed at the end of the drive contact surface 60a on the side of the fourth side wall part 21d. The protrusions 64e and 64f are spaced apart from each other in the Y direction. The protrusion 64e is formed closer to the first side wall part 21a than the protrusion 64f. The protrusion 64d protrudes from the outer surface of the second side wall part 21b when viewed from the Z direction. The protrusions 64e and 64f protrude from the outer surface of the fourth side wall part 21d when viewed from the Z direction. Each of the protrusions 64d to 64f is the remaining part after cutting the suspension lead that suspends the drive conductive part 60 in the lead frame. Note that the number of these protrusions can be arbitrarily changed. When viewed from the Z direction, the connection parts between the protrusions 64d to 64f and the drive contact surface 60a are each a curved surface.

[0266] On the control contact surface 70a of the control conductive part 70, protrusions 74d to 74f are formed. The protrusion 74d is formed at the end of the control contact surface 70a on the side of the second side wall part 21b, and the protrusions 74e and 74f are formed at the end of the control contact surface 70a on the side of the third side wall part 21c. The protrusions 74e and 74f are spaced apart from each other in the Y direction. The protrusion 74e is formed closer to the first side wall part 21a than the protrusion 74f. The protrusion 74d protrudes from the outer surface of the second side wall part 21b when viewed from the Z direction. The protrusions 74e and 74f protrude from the outer surface of the third side wall part 21c when viewed from the Z direction. Each of the protrusions 74d to 74f is the remaining part after cutting the suspension lead that suspends the control conductive part 70 in the lead frame. Note that the number of these protrusions can be arbitrarily changed. When viewed from the Z direction, the connection parts between the protrusions 74d to 74f and the control contact surface 70a are each a curved surface. Note that even with a configuration provided with such protrusions and recesses, the configuration of the conductive part on the back surface 12 of the substrate is the same as the configuration of the conductive part shown in FIG. 40.

[0267] According to such a configuration, since the volumes of the conductive parts 30, 40, 50, 60, and 70 can be increased, the heat dissipation performance of the semiconductor light-emitting device 1 can be improved. In addition, the common conductive part 30 is provided with recesses 35g and 35h, and the insulating part 150 enters the recesses 35g and 35h. Thereby, it becomes difficult for the insulating part 150 and the common conductive part 30 to peel off. In addition, the recesses 35g and 35h are respectively provided on the common contact surface 30a, and the insulating part 150 that does not penetrate in the Z direction enters the recesses 35g and 35h. According to this configuration, the common conductive part 30 can restrict the movement of the insulating part 150 in the Z direction toward the case 20 side.

[0268] In the semiconductor light-emitting device 1 shown in FIG. 43, the connecting conductive part 40, the element conductive part 50, the driving conductive part 60, and the control conductive part 70 are not provided with recesses, but this is not restrictive, and at least one of the connecting conductive part 40, the element conductive part 50, the driving conductive part 60, and the control conductive part 70 may be provided with a recess. This recess has the same configuration as the recesses 35g and 35h of the common conductive part 30. In addition, although not shown, at least one of the conductive parts 30, 40, 50, 60, and 70 may be provided with a flange similar to the flanges 36, 56, 66, and 76 of the conductive parts 30B, 50B, 60B, and 70B of the second embodiment.

[0269] · In the first embodiment, the sizes of the connection contact back surface 40b, the element contact back surface 50b, the drive contact back surface 60b, and the control contact back surface 70b can be arbitrarily changed. In one example, as shown in FIG. 44, the area of the connection contact back surface 40b and the area of the control contact back surface 70b may be equal to each other. The area of the element contact back surface 50b and the area of the drive contact back surface 60b may be equal to each other.

[0270] · In the first embodiment, as shown in FIG. 45, a capacitor 120 may be provided in the case 20. The capacitor 120 is arranged so as to straddle the element contact surface 50a and the drive contact surface 60a. According to this configuration, further space saving can be achieved.

[0271] · In the first embodiment, the semiconductor light-emitting element 80 and the electronic component 100 are arranged, for example, at the central portion in the X direction, but are not limited thereto and may be arranged biased toward either one of both end portions in the X direction. For example, the semiconductor light-emitting element 80 and the electronic component 100 may be arranged biased toward the third side wall portion 21c side rather than the central portion. According to this configuration, the space for installing the capacitor 120 can be increased.

[0272] · In each embodiment, the electronic component 100 is not limited to the MOSFET and may be other switching elements such as bipolar transistors. When the electronic component 100 is, for example, a bipolar transistor, either one of the first drive electrode 101 and the second drive electrode 103 corresponds to the collector electrode, the other corresponds to the emitter electrode, and the control electrode 102 corresponds to the base electrode.

[0273] Further, the electronic component 100 may be an IC instead of the switching element. Furthermore, the electronic component 100 is not limited to active elements such as switching elements and may be a passive element such as a capacitor. Also, the electronic component 100 does not have to be used to drive the semiconductor light-emitting element 80.

[0274] · In each embodiment, the arrangement direction of the semiconductor light-emitting element 80 and the electronic component 100 can be arbitrarily changed. For example, they may be arranged in the X direction or may be arranged in a direction intersecting the X direction and the Y direction. The common contact surface 30a only needs to extend in the arrangement direction of the semiconductor light-emitting element 80 and the electronic component 100 so that the semiconductor light-emitting element 80 and the electronic component 100 are arranged on the common contact surface 30a.

[0275] ·In the first embodiment, the arrangement of the plurality of conductive parts 30, 40, 50, 60, 70 can be arbitrarily changed. For example, the drive conductive part 60 and the control conductive part 70 may be arranged together on the same side in the X direction on both sides of the common contact surface 30a. Also, at least one of the drive conductive part 60 and the control conductive part 70 may be arranged at a position spaced in the Y direction with respect to the common contact surface 30a. The same applies to the connection conductive part 40 and the element conductive part 50. Further, the control conductive part 70 and the element conductive part 50 may be arranged together on the same side.

[0276] ·In the second embodiment, the arrangement of the plurality of conductive parts 30B, 50B, 60B, 70B can be arbitrarily changed. For example, the drive conductive part 60B and the control conductive part 70B may be arranged together on the same side in the X direction on both sides of the common contact surface 30a. In this case, the first common contact surface part 30c may be aligned in the X direction with respect to the second common contact surface part 30d. Also, at least one of the drive conductive part 60B and the control conductive part 70 may be arranged at a position spaced in the Y direction with respect to the common contact surface 30a. The same applies to the element conductive part 50B. Further, the control conductive part 70B and the element conductive part 50B may be arranged together on the same side.

[0277] ·In the first embodiment, the shapes of the plurality of contact surfaces 30a, 40a, 50a, 60a, 70a can be arbitrarily changed. For example, the sizes of the plurality of contact surfaces 30a, 40a, 50a, 60a, 70a may all be the same, or they may be different from each other. Also, at least one of the plurality of contact surfaces 30a, 40a, 50a, 60a, 70a may be elliptical or circular in shape.

[0278] ·In the first embodiment, as shown in FIG. 46, the common back surface conductive layer 32 and the connection back surface conductive layer 42 may be connected, and the common contact back surface 30b and the connection contact back surface 40b may be continuous.

[0279] ·In the first embodiment, the shapes of the plurality of contact back surfaces 30b, 40b, 50b, 60b, 70b can be arbitrarily changed. For example, the size of the common contact back surface 30b may be made smaller than that of the connection contact back surface 40b or the element contact back surface 50b. Also, the drive contact back surface 60b and the control contact back surface 70b may be made larger than the connection contact back surface 40b and the element contact back surface 50b. Further, the sizes of the plurality of contact back surfaces 30b, 40b, 50b, 60b, 70b may all be the same, or they may be different from each other. Moreover, at least one of the plurality of contact back surfaces 30b, 40b, 50b, 60b, 70b may be elliptical or circular in shape.

[0280] ·In the first embodiment, the connection conductive portion 40 may be omitted. Even in this case, contact with the outside of the semiconductor light-emitting device 1 can be ensured using the common contact back surface 30b. ·In each embodiment, the common contact back surface 30b is not essential. That is, the common back surface conductive layer 32 may be omitted.

[0281] ·In the first embodiment, as shown in FIG. 47, the lid 22 may have a transmissive portion 201 disposed above the semiconductor light-emitting element 80 through which light from the semiconductor light-emitting element 80 passes, and a light-shielding portion 202 disposed above the electronic component 100 that blocks light. According to this configuration, irradiation of the electronic component 100 with light can be suppressed, and thus malfunction of the electronic component 100 due to light irradiation can be suppressed.

[0282] The shapes of the transmissive portion 201 and the light-shielding portion 202 are arbitrary. For example, as shown in FIG. 48, the transmissive portion 201 may be formed only at a position overlapping the semiconductor light-emitting element 80, and the other portions may be the light-shielding portion 202.

[0283] ·In the first embodiment, the lid 22 may diffuse the light from the semiconductor light-emitting element 80. ·In each embodiment, the lid 22 may be omitted, and only the frame 21 may be used.

[0284] ·In the first embodiment, as shown in FIG. 49, the case 20 may be omitted. In this case, the capacitor 120 may be disposed in the space where the frame 21 was disposed. ·In the first embodiment, as shown in FIG. 50, the frame 21 may have an inclined surface 210 that is inclined so that the opening widens as it goes upward.

[0285] ·In the first embodiment, as shown in FIG. 51, the common connection portion 33 may be formed at a position overlapping the semiconductor light-emitting element 80. Further, the common connection portion 33 may be formed at a position overlapping the electronic component 100.

[0286] · In the first embodiment, as shown in FIGS. 52 to 55, the semiconductor light-emitting device 1 may include a case 20C having the same configuration as the case 20B of the second embodiment instead of the case 20. In this case, the semiconductor light-emitting device 1 may further include a light diffusion plate 130. FIGS. 56 and 57 show the case 20C alone. As shown in FIG. 53, the case 20C is smaller in size than the case 20B, and the formation position of the opening 22a is different from that of the case 20B. As shown in FIGS. 53 and 56, the opening 22a of the case 20C is formed on the first side wall portion 21a side of the lid 22 and slightly closer to the fourth side wall portion 21d than the central portion in the X direction. The size of the opening 22a shown in FIGS. 53 and 56 is, for example, the same as the size of the opening 22a of the second embodiment. Since the size of the case 20C in the X direction is smaller than the size of the case 20B in the X direction, the size of the opening 22a in the X direction is 2 / 3 or more of the size of the case 20C in the X direction. In one example, the size of the case 20C in the X direction and the size in the Y direction shown in FIG. 56 are each about 3.3 mm, and the size of the opening 22a in the X direction is about 2.4 mm. Note that the size of the case 20C in the Z direction shown in FIG. 54 is, for example, equal to the size of the case 20B in the Z direction. Also, the size of the light diffusion plate 130 shown in FIGS. 53 and 54 is the same as the size of the light diffusion plate 130 of the second embodiment. Note that the size of the light diffusion plate 130 in this modification example can be arbitrarily changed within a range capable of covering the entire opening 22a. In one example, the light diffusion plate 130 may have a size that covers the entire lid 22.

[0287] As shown in FIG. 53, the light diffusing plate 130 is disposed at the center of the lid 22 of the case 20C in the X direction. For this reason, the light diffusing plate 130 is disposed so as to be displaced in the X direction with respect to the opening 22a. More specifically, in this modification example, when viewed from the Z direction, the protruding distance DX3 of the light diffusing plate 130 from the opening 22a toward the third side wall portion 21c side in the X direction is larger than the protruding distance DX4 from the opening 22a toward the fourth side wall portion 21d side in the X direction. The protruding distance DX3 is larger than the protruding distance DY3 of the light diffusing plate 130 from the opening 22a toward the first side wall portion 21a side in the Y direction and the protruding distance DY4 from the opening 22a toward the second side wall portion 21b side in the Y direction. The protruding distance DY3 is equal to the protruding distance DY4. The protruding distance DX4 is smaller than the protruding distances DY3 and DY4. Thus, the light diffusing plate 130 is disposed closer to the third side wall portion 21c with respect to the opening 22a.

[0288] As shown in FIG. 57, when viewed from the Z direction, the accommodation space 23 formed by the inner surfaces of the side wall portions 21a to 21d has a shape different from a square. In other words, the frame 21 has portions with different width dimensions. Specifically, the third side wall portion 21c has a first portion 21ca corresponding to the opening 22a in the Y direction and a second portion 21cb which is a portion closer to the second side wall portion 21b than the first portion 21ca. The width dimension of the first portion 21ca is larger than the width dimension of the second portion 21cb. The width dimension of the second portion 21cb is equal to the width dimensions of the side wall portions 21a, 21b, and 21d. Here, the width dimension is a dimension in a direction orthogonal to the direction in which the side wall portions 21a to 21d extend when viewed from the Z direction.

[0289] Thus, when viewed from the Z direction, the length in the X direction of the accommodation space 23 on the second side wall portion 21b side is longer than the length in the X direction of the accommodation space 23 of the portion where the opening 22a is formed. Note that when viewed from the Z direction, the length in the X direction of the accommodation space 23 on the second side wall portion 21b side is defined by the length in the X direction between the inner surface of the second portion 21cb and the inner surface of the fourth side wall portion 21d. Also, the length in the X direction of the accommodation space 23 of the portion where the opening 22a is formed is defined by the length in the X direction between the inner surface of the first portion 21ca and the inner surface of the fourth side wall portion 21d when viewed from the Z direction.

[0290] As shown in FIG. 55, the opening 22a is formed in a portion of the lid 22 that faces the semiconductor light-emitting element 80. The electronic component 100 is disposed on the second side wall portion 21b side with respect to the opening 22a. That is, the electronic component 100 is disposed in the space on the longer side in the X direction of the accommodation space 23. Thereby, a space for forming the wires W2 and W3 (see, for example, FIG. 43) can be secured.

[0291] ·In the modification of the first embodiment and the second embodiment shown in FIGS. 52 to 57, since it is only necessary that the cases 20B and 20C are formed with a transmissive portion that transmits light from the semiconductor light-emitting element 80, a light-transmissive material may be provided in the cases 20B and 20C instead of the opening 22a. As an example, the cases 20B and 20C are formed by two-color molding of a light-transmissive resin material and a light-shielding resin material.

[0292] ·In the first embodiment, the contact surfaces 30a, 40a, 50a, 60a, 70a and the contact back surfaces 30b, 40b, 50b, 60b, 70b may have the same shape. ·In the second embodiment, the contact surfaces 30a, 50a, 60a, 70a and the contact back surfaces 30b, 50b, 60b, 70b may have the same shape.

[0293] · In the first embodiment, the positions where the connecting portions 43, 53, 63, and 73 are provided are not limited to the positions overlapping with the case 20 and can be arbitrarily changed. · In each embodiment, the shapes of the element upper surface 80a and the element lower surface 80b can be arbitrarily changed. Similarly, the positions and shapes of the light emitting region 90 and the element upper surface electrode 91 can be arbitrarily changed.

[0294] · In each embodiment, the shapes of the upper surface 100a and the lower surface 100b are not limited to rectangles and can be arbitrarily changed. Similarly, the positions and shapes of the first drive electrode 101 and the control electrode 102 can be arbitrarily changed.

[0295] · In each embodiment, the shapes of the substrates 10 and 10B are not limited to squares and can be arbitrarily changed. For example, one may be a rectangular shape that is longer than the other. · In each embodiment, the element lower surface electrode 92 may be formed on a part of the element lower surface 80b. Similarly, the second drive electrode 103 may be formed on a part of the lower surface 100b.

[0296] · In each embodiment, the specific configuration of the electronic devices 2 and 2B is arbitrary. For example, the capacitor 120 may be omitted from the electronic device 2. Also, the capacitor 120 may be added to the electronic device 2B. The electronic devices 2 and 2B may have a light receiving element mounted on the circuit board 110.

[0297] · In each embodiment, the specific layout of each wiring pattern 111 to 114 is arbitrary. Furthermore, the heat dissipation pattern 115 may be omitted. · In each embodiment, the semiconductor light emitting devices 1 and 1B may further include a partition wall that partitions the semiconductor light emitting element 80 and the electronic component 100.

[0298] In the first example, as shown in FIGS. 58 and 59, the semiconductor light-emitting device 1 including the case 20C includes a partition wall 24. The partition wall 24 is made of a light-shielding material. In one example, the partition wall 24 is made of the same resin material as the case 20B and is integrally formed with the case 20B. The partition wall 24 is formed so as to hang down from the lid 22 of the case 20B. In the illustrated example, the partition wall 24 is in contact with the substrate surface 11. The partition wall 24 is provided between the semiconductor light-emitting element 80 and the electronic component 100 in the Y direction, and partitions the accommodation space 23 into a first accommodation space 23A in which the semiconductor light-emitting element 80 is accommodated and a second accommodation space 23B in which the electronic component 100 is accommodated. As shown in FIG. 59, the partition wall 24 connects the third side wall portion 21c and the fourth side wall portion 21d. That is, the first accommodation space 23A is a space partitioned by the first side wall portion 21a, the third side wall portion 21c, the fourth side wall portion 21d, and the partition wall 24, and the second accommodation space 23B is a space partitioned by the second side wall portion 21b, the third side wall portion 21c, the fourth side wall portion 21d, and the partition wall 24. In the illustrated example, the partition wall 24 extends along the X direction in plan view. The partition wall 24 is provided so as to overlap the recesses 35e and 35f of the common conductive portion 30 in the Z direction.

[0299] In the second example, as shown in FIGS. 60 and 61, the semiconductor light-emitting device 1B of the second embodiment includes a partition wall 24. The partition wall 24 is formed so as to hang down from the lid 22 of the case 20B. In the illustrated example, the partition wall 24 is in contact with the substrate surface 11. The partition wall 24 is provided between the semiconductor light-emitting element 80 and the electronic component 100 in the Y direction, and partitions the accommodation space 23 into a first accommodation space 23A in which the semiconductor light-emitting element 80 and the capacitor 120 are accommodated and a second accommodation space 23B in which the electronic component 100 is accommodated. As shown in FIG. 61, the partition wall 24 connects the third side wall portion 21c and the fourth side wall portion 21d. That is, the first accommodation space 23A is a space partitioned by the first side wall portion 21a, the third side wall portion 21c, the fourth side wall portion 21d, and the partition wall 24, and the second accommodation space 23B is a space partitioned by the second side wall portion 21b, the third side wall portion 21c, the fourth side wall portion 21d, and the partition wall 24.

[0300] As shown in FIG. 61, the partition wall 24 has a first portion 24a extending along the X direction from the third side wall portion 21c, a second portion 24b extending along the X direction from the fourth side wall portion 21d, and a step 24c formed between the first portion 24a and the second portion 24b in the X direction. That is, in the Y direction, the first portion 24a and the second portion 24b are displaced and arranged. In the illustrated example, the second portion 24b is displaced and located closer to the second side wall portion 21b than the first portion 24a.

[0301] The first portion 24a partitions the semiconductor light-emitting element 80 and the electronic component 100. The second portion 24b partitions the capacitor 120 and the wire W2. The step 24c is located between the semiconductor light-emitting element 80 and the capacitor 120 in the X direction. That is, due to the step 24c and the second portion 24b, the length in the Y direction of the portion of the first accommodation space 23A that accommodates the capacitor 120 is increased. Thereby, the capacitor 120 can be accommodated in the first accommodation space 23A. Further, the step 24c is located between the electronic component 100 and the capacitor 120 in the X direction. Therefore, a placement space for the sealing resin 140 and the coating agent 141 that cover the electronic component 100 can be secured. Note that the shape of the step 24c in plan view can be arbitrarily changed. In one example, the step 24c may extend obliquely toward the second side wall portion 21b as it goes from the first portion 24a toward the fourth side wall portion 21d. This makes it easier to secure a placement space for the sealing resin 140 and the coating agent 141 that cover the electronic component 100.

[0302] In the third example, in the semiconductor light-emitting device 1B of the second example, the shape of the partition wall 24 may be changed as shown in FIG. 62. More specifically, the partition wall 24 is formed such that the semiconductor light-emitting element 80 is disposed in the first accommodation space 23A, and the electronic component 100 and the capacitor 120 are disposed in the second accommodation space 23B. That is, the partition wall 24 is formed in an L shape connecting the third side wall portion 21c and the first side wall portion 21a in a plan view. That is, the first accommodation space 23A is a space partitioned by the first side wall portion 21a, the third side wall portion 21c, and the partition wall 24, and the second accommodation space 23B is an L-shaped space partitioned by the first side wall portion 21a to the fourth side wall portion 21d and the partition wall 24.

[0303] · In the second embodiment, as shown in FIG. 63, a light-shielding wall 25 may be provided that hangs down from the periphery of the opening 22a of the case 20B. In FIG. 63, the light-shielding wall 25 is formed over the entire periphery of the opening 22a. According to this configuration, even if the light from the semiconductor light-emitting element 80 is reflected by the light diffusion plate 130, the reflected light is less likely to irradiate the electronic component 100. Therefore, malfunction of the electronic component 100 due to the light of the semiconductor light-emitting element 80 can be suppressed. Note that the length of the light-shielding wall 25 in the Z direction can be arbitrarily changed within a range in which the reflected light from the light diffusion plate 130 is less likely to irradiate the electronic component 100. Further, the light-shielding wall 25 is not limited to the configuration of being formed over the entire periphery of the opening 22a, and may be formed on a part of the periphery of the opening 22a. The light-shielding wall 25 may be formed at least in a portion between the semiconductor light-emitting element 80 and the electronic component 100 around the opening 22a. In FIG. 63, the light diffusion plate 130 may be a flat plate as shown in FIG. 19. Further, in FIG. 63, the sealing resin 140 and the coating agent 141 are omitted, but the sealing resin 140 and the coating agent 141 may be added to cover the electronic component 100.

[0304] · In the second embodiment, the shape of the light diffusing plate 130 is not limited to a flat plate shape and can be arbitrarily changed. In one example, as shown in FIG. 63, the light diffusing plate 130 has a concave portion 131 that is rectangular in cross-section. In the illustrated example, the bottom portion 131a of the concave portion 131 is formed by a flat surface orthogonal to the Z direction. Since the light from the semiconductor light emitting element 80 is reflected at the bottom of the concave portion 131 of the light diffusing plate 130, the inner surface constituting the opening 22a functions as a light shielding wall. For this reason, it becomes difficult for the reflected light from the light diffusing plate 130 to irradiate the electronic component 100. As shown in FIG. 63, a case 20B in which the light diffusing plate 130 having the concave portion 131 and the light shielding wall 25 are combined may be used. In this case, it becomes even more difficult for the reflected light from the light diffusing plate 130 to irradiate the electronic component 100.

[0305] In addition, in the first embodiment, even when the semiconductor light emitting device 1 includes the case 20C shown in FIG. 56, at least one of a configuration in which the light shielding wall 25 is provided in the case 20C and the light diffusing plate 130 having the concave portion 131 can be used.

[0306] · In each embodiment, a ventilation portion that communicates the accommodation space of the case 20 (20B, 20C) with the outside of the case 20 (20B, 20C) may be provided between the substrate 10 (10B) and the case 20 (20B, 20C). In the following description of the ventilation portion 160, the case 20B of the semiconductor light emitting device 1B of the second embodiment is used.

[0307] In one example, as shown in FIG. 64, a side wall side recess 160A is provided in the second side wall portion 21b of the frame 21 of the case 20B. The side wall side recess 160A is formed from the inner surface to the outer surface of the second side wall portion 21b. The ventilation portion 160 is composed of the side wall side recess 160A and the substrate surface 11 of the substrate 10B. The ventilation portion 160 extends obliquely from the fourth side wall portion 21d side toward the third side wall portion 21c side in the X direction as it goes from the inner surface to the outer surface of the second side wall portion 21b in the Y direction. As shown in FIG. 65, the width dimension of the ventilation portion 160 (side wall side recess 160A) is constant. For this reason, the width dimension of the first opening region S1 on the accommodation space 23 side of the ventilation portion 160 (side wall side recess 160A) and the width dimension of the second opening region S2 on the outside of the case 20B of the ventilation portion 160 (side wall side recess 160A) are equal to each other. Here, the width dimension of the ventilation portion 160 (side wall side recess 160A) is the dimension in the direction orthogonal to the direction in which the ventilation portion 160 extends in plan view. Also, the first opening region S1 can also be said to be an inner opening region that opens to the inner surface of the side wall portion (second side wall portion 21b) of the case 20B. The second opening region S2 can also be said to be an outer opening region that opens to the outer surface of the side wall portion (second side wall portion 21b) of the case 20B.

[0308] As shown in FIG. 66, the side wall side recess 160A is formed by being recessed in the Z direction from the end surface facing the substrate surface 11 in the second side wall portion 21b. As shown in FIGS. 65 and 65, the side wall side recess 160A has a pair of side surfaces 161 spaced apart from each other and a top surface 162 connecting the pair of side surfaces 161. In the illustrated example, the pair of side surfaces 161 are inclined surfaces having a tapered shape that approach each other as they go toward the top surface 162. The top surface 162 is a flat surface orthogonal to the Z direction.

[0309] Further, the side-wall side recess 160A has a first side end surface 161a and a second side end surface 161b. The first side end surface 161a is interposed between the outer surface of the second side wall portion 21b and one side surface 161, and is a convex curved surface when viewed from the Z direction. Note that a curved surface similar to the first side end surface 161a may be interposed between the outer surface of the second side wall portion 21b and the other side surface 161. The second side end surface 161b is interposed between the inner surface of the second side wall portion 21b and the other side surface 161, and is a convex curved surface when viewed from the Z direction. Note that a curved surface similar to the second side end surface 161b may be interposed between the inner surface of the second side wall portion 21b and one side surface 161.

[0310] Also, around the ventilation portion 160, there is a portion where the adhesive P4 that fixes the case 20B and the substrate surface 11 is not interposed. Thereby, entry of the adhesive P4 into the ventilation portion 160 is suppressed, and a decrease in ventilation performance can be suppressed. Note that the number of ventilation portions 160 can be arbitrarily changed. For example, a plurality of ventilation portions 160 may be provided in the frame 21.

[0311] · When the case 20B is viewed from the side, the shape of the ventilation portion 160 (side-wall side recess 160A) can be arbitrarily changed. In the first example, as shown in FIG. 67, the side-wall side recess 160A further has a pair of curved portions 163 provided between a pair of side surfaces 161 and a top surface 162. The pair of curved portions 163 connect the pair of side surfaces 161 and the top surface 162. Note that instead of the pair of curved portions 163, the pair of side surfaces 161 of the ventilation portion 160 may be formed in a curved shape.

[0312] In the second example, as shown in FIG. 68, instead of the pair of side surfaces 161 and the top surface 162, a curved surface 164 is provided for the side-wall side recess 160A. The curved surface 164 is a curved surface that is recessed so as to be away from the substrate surface 11 as it goes toward the central portion of the width of the ventilation portion 160.

[0313] In the third example, as shown in FIG. 69, the sidewall-side recess 160A is a V-groove. That is, the ventilation portion 160 has a pair of inclined surfaces 165 that incline away from the substrate surface 11 as they go toward the central portion of the width of the ventilation portion 160. The pair of inclined surfaces 165 are connected to each other at the central portion of the width of the ventilation portion 160.

[0314] · When viewed from the Z direction, the shape of the ventilation portion 160 (sidewall-side recess 160A) can be arbitrarily changed. In the first example, as shown in FIG. 70, the ventilation portion 160 (sidewall-side recess 160A) is configured such that the width dimension of the first opening region S1 is larger than the width dimension of the second opening region S2. In other words, the ventilation portion 160 (sidewall-side recess 160A) is configured such that the width dimension of the second opening region S2 is smaller than the width dimension of the first opening region S1. In the illustrated example, the width dimension of the ventilation portion 160 (sidewall-side recess 160A) becomes smaller as it goes from the first opening region S1 toward the second opening region S2. That is, the ventilation portion 160 (sidewall-side recess 160A) is formed in a tapered shape that becomes smaller as it goes from the first opening region S1 toward the second opening region S2 when viewed from the Z direction. According to this configuration, by reducing the width dimension of the second opening region S2, entry of unintended objects can be further suppressed.

[0315] In the second example, as shown in FIG. 71, the ventilation portion 160 (sidewall-side recess 160A) is configured such that the width dimension of the first opening region S1 is smaller than the width dimension of the second opening region S2. In the illustrated example, the width dimension of the ventilation portion 160 (sidewall-side recess 160A) becomes smaller as it goes from the second opening region S2 toward the first opening region S1. That is, the ventilation portion 160 (sidewall-side recess 160A) is formed in a tapered shape that becomes smaller as it goes from the second opening region S2 toward the first opening region S1 when viewed from the Z direction. According to this configuration, by reducing the width dimension of the first opening region S1, entry of unintended objects can be further suppressed.

[0316] In the third example, as shown in FIG. 72, the side wall side recess 160A is formed in a linear shape along the Y direction when viewed from the Z direction. As a result, the ventilation portion 160 is formed in a linear shape along the Y direction. In the illustrated example, the width dimension of the ventilation portion 160 (side wall side recess 160A) is constant. For this reason, the width dimension of the first opening region S1 and the width dimension of the second opening region S2 are equal to each other. Note that in the side wall side recess 160A of FIG. 72, the width dimension of the ventilation portion 160 (side wall side recess 160A) may be changed. In one example, the width dimension of the ventilation portion 160 (side wall side recess 160A) may become smaller or larger as it goes from the first opening region S1 to the second opening region S2.

[0317] In the fourth example, as shown in FIG. 73, the side wall side recess 160A is formed in a labyrinth shape (crank shape) when viewed from the Z direction. More specifically, the side wall side recess 160A has a first recess 166 including the first opening region S1, a second recess 167 including the second opening region S2, and a third recess 168 connecting the first recess 166 and the second recess 167. In the illustrated example, when viewed from the Z direction, the first recess 166 and the second recess 167 each extend along the Y direction. Also, when viewed from the Z direction, the first recess 166 and the second recess 167 are displaced from each other in the X direction. The third recess 168 extends in a direction intersecting the first recess 166 and the second recess 167, and in the illustrated example, extends along the X direction. As a result, the ventilation portion 160 is formed in a labyrinth shape (crank shape). In other words, the ventilation portion 160 has a first ventilation portion formed from the first recess 166 and the substrate surface 11, a third ventilation portion formed from the second recess 167 and the substrate surface 11, and a second ventilation portion formed from the third recess 168 and the substrate surface 11. That is, the ventilation portion 160 has, as a labyrinth structure, a first ventilation portion extending from the inner surface to the outer surface of the side wall portion (second side wall portion 21b) of the case 20B, a second ventilation portion connected to the first ventilation portion and extending in a direction intersecting the direction in which the first ventilation portion extends, and a third ventilation portion connected to the second ventilation portion and extending from the inner surface to the outer surface of the side wall portion (second side wall portion 21b). According to this configuration, entry of unintended objects can be further suppressed.

[0318] · In FIGS. 64 to 73, the ventilation portion 160 was constituted by the side wall side recess 160A provided in the case 20B and the substrate surface 11, but it is not limited thereto. For example, the configuration of the ventilation portion 160 can be changed as in the first example and the second example shown below.

[0319] In the first example, as shown in FIG. 74, a substrate side recess 160B is provided in the substrate 10B. The ventilation portion 160 is constituted by the substrate side recess 160B and the end face of the frame 21. In the illustrated example, the ventilation portion 160 is constituted by the substrate side recess 160B and the end face of the second side wall portion 21b.

[0320] The substrate side recess 160B is provided so as to be recessed from the substrate surface 11 toward the substrate back surface 12. In other words, the substrate side recess 160B is recessed away from the frame 21 with respect to the substrate surface 11 in the Z direction. In the illustrated example, the substrate side recess 160B is provided in the insulating portion 13. Also, in the illustrated example, the shape of the substrate side recess 160B is symmetrical to the shape of the side wall side recess 160A shown in FIG. 66. That is, the substrate side recess 160B is constituted by a pair of side surfaces 161 spaced apart from each other and a top surface 162 connecting the pair of side surfaces 161. The pair of side surfaces 161 are inclined surfaces having a tapered shape that approach each other as they go toward the top surface 162. Note that the shape of the substrate side recess 160B is not limited thereto and can be changed to the same shape as the side wall side recess 160A shown in FIGS. 67 to 73.

[0321] In the second example, as shown in FIG. 75, a side wall side recess 160A is provided in the case 20B, and a substrate side recess 160B is provided in the substrate 10B. The ventilation portion 160 is constituted by the side wall side recess 160A and the substrate side recess 160B. Here, the side wall side recess 160A and the substrate side recess 160B are symmetric to each other. Note that the shape of the side wall side recess 160A and the shape of the substrate side recess 160B are not limited to the configurations illustrated in FIG. 75, and can be changed to the same shape as the side wall side recess 160A shown in FIGS. 67 to 73. In this case, the shape of the side wall side recess 160A and the shape of the substrate side recess 160B as viewed from the side of the case 20B do not have to be symmetric to each other.

[0322] · The configuration of the ventilation portion 160 is not limited to FIGS. 64 to 75, and a configuration using the difference in adhesion between the case 20B and the substrate 10B may be employed. Specifically, as shown in FIGS. 76 and 77, the side wall side recess 160A and the substrate side recess 160B are not provided in the case 20B and the substrate 10B. The case 20B shown in FIGS. 76 and 77 is configured such that the end surface of the frame 21 in the Z direction is partitioned into a first region 21ra and a second region 21rb in the circumferential direction of the frame 21. The first region 21ra is sufficiently smaller than the second region 21rb. Since the surface roughnesses of the first region 21ra and the second region 21rb are different from each other, the bonding force with the adhesive P4 is different. For example, the surface roughness (Ra) of the first region 21ra is about 0.01 μm or more and 0.1 μm or less, while the surface roughness (Ra) of the second region 21rb is about 1.0 μm or more and 20 μm or less, which is rougher than the first region 21ra. The thickness of the adhesive P4 is, for example, about 15 μm or more and 40 μm or less. Examples of the method for forming such a second region 21rb include mechanical processing such as sandblasting and chemical processing using a chemical solution. An example of such processing is chemical processing in which a chemical such as a release agent is applied to a part of the end surface of the frame 21.

[0323] As shown in FIGS. 76 and 77, a portion sandwiched between the first region 21ra on the Z-direction end face of the frame 21 and the adhesive P4 constitutes the ventilation portion 160. However, in a state where the semiconductor light-emitting device 1B is being normally transported, stored, and used, the case 20B and the substrate 10B are joined by the adhesive P4 also in the first region 21ra, and the ventilation portion 160 does not form a clear hole or the like that allows the accommodation space 23 to communicate with the outside.

[0324] FIG. 77 schematically shows a state in which the internal pressure of the accommodation space 23 has increased during the mounting process of the semiconductor light-emitting device 1B using, for example, a reflow furnace. When the internal pressure of the accommodation space 23 rises, a force acts to peel the case 20B from the adhesive P4. Due to this force, local peeling occurs at the joint portion of the first region 21ra set as a portion where the bonding force is relatively weak. As a result, the ventilation portion 160 takes the form of a gap, allowing the accommodation space 23 to communicate with the outside. In FIG. 77, for the sake of easy understanding, a form in which the ventilation portion 160 is a clear gap is shown, but the actual ventilation portion 160 only needs to be able to release the gas in the accommodation space 23 to the outside. When the gas in the accommodation space 23 can be guided to the outside by the slight peeling between the first region 21ra and the adhesive P4, and the internal pressure of the accommodation space 23 decreases due to this ventilation, the first region 21ra and the adhesive P4 come into contact again.

[0325] According to this configuration, the reliability of the semiconductor light-emitting device 1B can be improved. In addition, the ventilation portion 160 using the first region 21ra is in a closed form during normal use and the like. That is, the first region 21ra and the adhesive P4 are in contact. Therefore, the entry of unintended objects such as moisture can be more reliably suppressed. Also, after the ventilation shown in FIG. 77 is realized, the ventilation portion 160 can return to a closed state again. Thereby, the entry of unintended objects can be suppressed also in subsequent use and the like.

[0326] · The formation position and number of the ventilation portions 160 can be arbitrarily changed respectively. · When applying the ventilation part 160 described above to the first embodiment, a side wall side recess 160A is provided in the end face of the frame 21 that faces the substrate surface 11 in the Z direction. The side wall side recess 160A is formed from the inner surface to the outer surface of the side wall part of the frame 21. Here, the side wall part may be at least one of each side wall part 21a to 21d of the frame 21.

[0327] · When applying the ventilation part 160 described above to the semiconductor light emitting devices 1 and 1B having the partition wall 24 in each embodiment, the ventilation part 160 has a first ventilation part that communicates the first accommodation space 23A with the outside of the cases 20 and 20B, and a second ventilation part that communicates the second accommodation space 23B with the outside of the cases 20 and 20B. The first ventilation part is provided, for example, in the side wall part that constitutes the first accommodation space 23A among each side wall part 21a to 21d. The second ventilation part is provided, for example, in the side wall part that constitutes the second accommodation space 23B among each side wall part 21a to 21d.

[0328] · In the second embodiment, the shape of the opening 22a of the case 20B can be arbitrarily changed. In one example, as shown in FIGS. 78 to 80, the shape of the opening 22a in plan view may be a square. In the illustrated example, the length in the Y direction of the opening 22a of the second embodiment is increased to form a square opening 22a. In this case, as shown in FIGS. 79 and 80, in the housing space 23, the first part 22b, which is the part of the lid 22 at the same position as the opening 22a in the Y direction, is thinner than the second part 22c, which is the part on the second side wall part 21b side of the opening 22a. In other words, the second part 22c is thicker than the first part 22b. As shown in FIG. 80, the first part 22b is the part adjacent to the opening 22a in the X direction and is formed from the opening 22a to the fourth side wall part 21d. The second part 22c is formed from the third side wall part 21c to the fourth side wall part 21d in the X direction. Note that the shape of the opening 22a in plan view is not limited to a rectangular shape such as a square or a rectangle, and may be a circular shape, an elliptical shape, an oval shape, etc.

[0329] · In each embodiment, the configuration for accommodating the semiconductor light-emitting element 80 and the electronic component 100 can be arbitrarily changed. As an example, in the semiconductor light-emitting device 1, instead of the case 20, the semiconductor light-emitting element 80 and the electronic component 100 may be encapsulated with a sealing resin. Further, in the semiconductor light-emitting device 1B, instead of the case 20B, the semiconductor light-emitting element 80, the electronic component 100, and the capacitor 120 may be encapsulated with a sealing resin.

[0330] As a specific example, as shown in FIG. 81, the semiconductor light-emitting device 1B includes a light-transmissive sealing resin 170 that encapsulates the semiconductor light-emitting element 80, the electronic component 100, and the capacitor 120. The sealing resin 170 is formed in a rectangular parallelepiped shape. The sealing resin 170 is made of a resin material having electrical insulation properties. The sealing resin 170 has an upper surface 171 and side surfaces 172. In the upper surface 171, a plurality of recesses 171a are formed in a portion facing the semiconductor light-emitting element 80 in the Z direction. The plurality of recesses 171a are arranged at intervals from each other, for example, in the X direction and the Y direction. Thereby, the light from the semiconductor light-emitting element 80 is diffused.

[0331] A notch 173 is formed in a portion of the sealing resin 170 between the semiconductor light-emitting element 80 and the electronic component 100 in the Y direction. A light-shielding wall 174 is provided in the notch 173. As an example, the light-shielding wall 174 is formed by filling the notch 173 with a light-shielding material. An example of the light-shielding material is a colored resin material. According to this configuration, since the light from the semiconductor light-emitting element 80 is suppressed from irradiating the electronic component 100, the occurrence of malfunction of the electronic component 100 can be suppressed. Note that, when viewed from the Z direction, the shapes of the notch 173 and the light-shielding wall 174 are the same as the partition wall 24 shown in, for example, FIG. 61 or FIG. 62. Instead of the configuration in which the notch 173 is filled with a light-shielding material to form the light-shielding wall 174, for example, a configuration in which a light-shielding wall 174 formed in a plate shape in advance is inserted into the notch 173 may be used.

[0332] As another example, as shown in FIG. 82, the semiconductor light-emitting device 1B includes a frame 180. The frame 180 is configured to partition the semiconductor light-emitting element 80 and the electronic component 100. The frame 180 is made of, for example, a light-shielding material. In one example, the frame 180 is made of a colored resin material. The frame 180 has a partition wall 183 that partitions a first accommodating portion 181 for accommodating the semiconductor light-emitting element 80 and a second accommodating portion 182 for accommodating the electronic component 100. In the illustrated example, the partition wall 183 is made of the same material as the frame 180 and is formed integrally with the frame 180. The first accommodating portion 181 is filled with a first encapsulating resin 190A, and the second accommodating portion 182 is filled with a second encapsulating resin 190B. In the illustrated example, both of the encapsulating resins 190A and 190B are light-transmissive resins. The material of the first encapsulating resin 190A is the same as the material of the second encapsulating resin 190B. Note that the material of the first encapsulating resin 190A and the material of the second encapsulating resin 190B may be different from each other. In one example, the second encapsulating resin 190B may be filled with a light-shielding material. In one example, a light-shielding resin material is used for the second encapsulating resin 190B. Note that, when viewed from the Z direction, the shape of the partition wall 183 is the same as the shape of the partition wall 24 shown in FIG. 61 or FIG. 62, for example. Further, the first encapsulating resin 190A may be omitted.

[0333] A light diffusion plate 130 is attached to the frame 180 so as to cover the first accommodating portion 181 from the Z direction. The light diffusion plate 130 is supported by a part of the frame 180 and the partition wall 183. According to this configuration, since the light from the semiconductor light-emitting element 80 is suppressed from irradiating the electronic component 100 by the partition wall 183, the occurrence of malfunction of the electronic component 100 can be suppressed.

[0334] · In the second embodiment, at least one of the encapsulating resin 140 and the coating agent 141 that covers the electronic component 100 may be omitted (see FIG. 63, for example). · In the first embodiment, at least one of the encapsulating resin 140 and the coating agent 141 that covers the electronic component 100 may be added.

[0335] · In the second embodiment, the coating agent 141 may be applied only to the portion of the conductive bonding material P2 that protrudes from the electronic component 100 among the conductive bonding materials P2 that connect the electronic component 100 to the second common contact surface portion 30d. Thereby, the sulfidation of the conductive bonding material P2 can be suppressed. Note that, also in the first embodiment, the coating agent 141 may be applied only to the portion of the conductive bonding material P2 that protrudes from the electronic component 100.

[0336] · In the second embodiment, one of the pair of recesses 35b may be omitted from the common conductive portion 30B. Also, one of the pair of recesses 35c may be omitted from the common conductive portion 30B. Further, at least one of the recess 35a, the pair of recesses 35b, the pair of recesses 35c, the recess 35d, and the recess 35e may be omitted from the common conductive portion 30B.

[0337] · In the second embodiment, at least one recess may be provided in the control conductive portion 70B. The recess has the same configuration as the recess 35a or the like. · In the second embodiment, the first common contact back surface portion 30e and the second common contact back surface portion 30f may be connected. That is, the recess 35f may be omitted from the common conductive portion 30B. According to this configuration, since the common contact back surface 30b becomes larger, the heat dissipation performance of the semiconductor light emitting element 80 and the electronic component 100 can be improved.

[0338] · In the second embodiment, a groove that is recessed from the common contact surface 30a toward the back surface 12 side of the substrate in the Z direction may be provided in the portion of the common conductive portion 30B between the semiconductor light emitting element 80 and the electronic component 100. In one example, the groove penetrates the common conductive portion 30B in the X direction. Also, the insulating portion 13 does not enter the groove. In this case, the recess 35f may be omitted from the common conductive portion 30B. According to this configuration, entry of the sealing resin 140 and the coating agent 141 into the light emitting region 90 of the semiconductor light emitting element 80 can be suppressed. Note that the groove does not have to penetrate the common conductive portion 30B in the X direction. Also, the number of grooves can be arbitrarily changed, and a plurality of grooves may be provided in the common conductive portion 30B.

[0339] · In the second embodiment, the back surface portion 60e of the first drive contact and the back surface portion 60f of the second drive contact may be connected. That is, the recess 65a may be omitted from the drive conductive portion 60B.

[0340] · In the second embodiment, the position of the semiconductor light-emitting element 80 in the Y direction with respect to the first common contact surface portion 30c can be arbitrarily changed. In one example, the semiconductor light-emitting element 80 may be disposed at the central portion in the Y direction of the first common contact surface portion 30c, or may be disposed closer to the first side wall portion 21a on the first common contact surface portion 30c. Further, the semiconductor light-emitting element 80 may be disposed on the first common contact surface portion 30c so as not to protrude in the Y direction with respect to the element contact surface 50a.

[0341] · In the second embodiment, the position of the semiconductor light-emitting element 80 in the X direction with respect to the first common contact surface portion 30c can be arbitrarily changed. In one example, the semiconductor light-emitting element 80 may be disposed at the central portion in the X direction of the first common contact surface portion 30c, or may be disposed closer to the third side wall portion 21c on the first common contact surface portion 30c.

[0342] · In the second embodiment, the position of the electronic component 100 in the Y direction with respect to the second common contact surface portion 30d can be arbitrarily changed. In one example, the electronic component 100 may be disposed at the central portion in the Y direction of the second common contact surface portion 30d, or may be disposed closer to the second side wall portion 21b on the second common contact surface portion 30d.

[0343] · In the second embodiment, the position of the electronic component 100 in the X direction with respect to the second common contact surface portion 30d can be arbitrarily changed. In one example, the electronic component 100 may be disposed closer to the second drive contact surface portion 60d of the second common contact surface portion 30d, or may be disposed closer to the control contact surface 70a of the second common contact surface portion 30d.

[0344] · In the second embodiment, the semiconductor light-emitting element 80 and the electronic component 100 may be arranged to be spaced apart from each other in the Y direction while being aligned in the X direction. · In the second embodiment, the capacitor 120 may be arranged so as to overlap the electronic component 100 when viewed from the X direction.

[0345] · In the second embodiment, the number of capacitors 120 incorporated in the semiconductor light-emitting device 1B can be arbitrarily changed. For example, the semiconductor light-emitting device 1B may include a plurality of capacitors 120.

[0346] · In the second embodiment, the shapes of the plurality of contact surfaces 30a, 50a, 60a, 70a can be arbitrarily changed. For example, the size of the common contact surface 30a may be made smaller than that of the element contact surface 50a. Also, the drive contact surface 60a and the control contact surface 70a may be made larger than the element contact surface 50a. Further, the sizes of the plurality of contact surfaces 30a, 50a, 60a, 70a may all be made the same, or some may be made the same and the rest may be made different. Furthermore, at least one of the plurality of contact surfaces 30a, 50a, 60a, 70a may be made elliptical or circular.

[0347] · In the second embodiment, the size of the first common contact surface portion 30c can be arbitrarily changed. In one example, the first common contact surface portion 30c may be equal to the drive contact surface 60a or smaller than the drive contact surface 60a. In another example, the first common contact surface portion 30c may be equal to at least one of the element contact surface 50a and the control contact surface 70a, or smaller than at least one of the element contact surface 50a and the control contact surface 70a.

[0348] · In the second embodiment, the size of the second common contact surface portion 30d can be arbitrarily changed. In one example, the second common contact surface portion 30d may be equal to the drive contact surface 60a or smaller than the drive contact surface 60a. In another example, the second common contact surface portion 30d may be equal to at least one of the element contact surface 50a and the control contact surface 70a, or smaller than at least one of the element contact surface 50a and the control contact surface 70a.

[0349] · In the second embodiment, the size of the first drive contact surface portion 60c can be arbitrarily changed. In one example, the first drive contact surface portion 60c may be equal to the element contact surface 50a or larger than the element contact surface 50a. In another example, the first drive contact surface portion 60c may be equal to the control contact surface 70a or smaller than the control contact surface 70a.

[0350] · In the second embodiment, the size of the second drive contact surface portion 60d can be arbitrarily changed. In one example, the second drive contact surface portion 60d may be equal to the element contact surface 50a or larger than the element contact surface 50a. In another example, the second drive contact surface portion 60d may be equal to the control contact surface 70a or smaller than the control contact surface 70a.

[0351] · In the second embodiment, the shapes of the plurality of contact back surfaces 30b, 50b, 60b, 70b can be arbitrarily changed. For example, the size of the common contact back surface 30b may be made smaller than the element contact back surface 50b. Also, the drive contact back surface 60b and the control contact back surface 70b may be made larger than the element contact back surface 50b. Also, the sizes of the plurality of contact back surfaces 30b, 50b, 60b, 70b may all be made the same, or some may be made the same and the rest may be made different. Further, at least one of the plurality of contact back surfaces 30b, 50b, 60b, 70b may be made elliptical or circular.

[0352] · In the second embodiment, the size of the first common contact back surface portion 30e can be arbitrarily changed. In one example, the first common contact back surface portion 30e may be equal to the drive contact back surface 60b or smaller than the drive contact back surface 60b. In another example, the first common contact back surface portion 30e may be equal to at least one of the element contact back surface 50b and the control contact back surface 70b, or smaller than at least one of the element contact back surface 50b and the control contact back surface 70b.

[0353] · In the second embodiment, the size of the second common contact back surface portion 30f can be arbitrarily changed. In one example, the second common contact back surface portion 30f may be equal to the drive contact back surface 60b or smaller than the drive contact back surface 60b. In another example, the second common contact back surface portion 30f may be equal to at least one of the element contact back surface 50b and the control contact back surface 70b, or smaller than at least one of the element contact back surface 50b and the control contact back surface 70b.

[0354] · In the second embodiment, the size of the first drive contact back surface portion 60e can be arbitrarily changed. In one example, the first drive contact back surface portion 60e may be equal to the element contact back surface 50b or larger than the element contact back surface 50b. In another example, the first drive contact back surface portion 60e may be equal to the control contact back surface 70b or smaller than the control contact back surface 70b.

[0355] · In the second embodiment, the size of the second drive contact back surface portion 60f can be arbitrarily changed. In one example, the second drive contact back surface portion 60f may be equal to the element contact back surface 50b or larger than the element contact back surface 50b. In another example, the second drive contact back surface portion 60f may be equal to the control contact back surface 70b or smaller than the control contact back surface 70b.

[0356] · In the second embodiment, the flange 36 may be omitted from the common conductive portion 30B. Further, the flange 56 may be omitted from the element conductive portion 50B. Further, the flange 66 may be omitted from the drive conductive portion 60B. Further, the flange 76 may be omitted from the control conductive portion 70B.

[0357] · In the second embodiment, the light diffusing plate 130 may be omitted from the semiconductor light emitting device 1B. · In the second embodiment, the height of the semiconductor light emitting element 80 from the substrate surface 11 and the height of the electronic component 100 from the substrate surface 11 can be arbitrarily changed. In one example, the height of the electronic component 100 from the substrate surface 11 may be equal to or greater than the height of the semiconductor light emitting element 80 from the substrate surface 11.

[0358] · In the second embodiment, the Z-direction position of the flange 36 with respect to the common conductive portion 30B can be arbitrarily changed. In one example, the flange 36 may be formed on the side of the common contact back surface 30b rather than the common contact surface 30a. Further, the flange 36 may be formed flush with the common contact back surface 30b.

[0359] · In the second embodiment, the Z-direction position of the flange 56 with respect to the element conductive portion 50B can be arbitrarily changed. In one example, the flange 56 may be formed on the side of the element contact back surface 50b rather than the element contact surface 50a. Further, the flange 56 may be formed flush with the element contact back surface 50b.

[0360] · In the second embodiment, the Z-direction position of the flange 66 with respect to the drive conductive portion 60B can be arbitrarily changed. In one example, the flange 66 may be formed on the side of the drive contact back surface 60b rather than the drive contact surface 60a. Further, the flange 66 may be formed flush with the drive contact back surface 60b.

[0361] · In the second embodiment, the number of capacitors 120 can be arbitrarily changed. In one example, the semiconductor light emitting device 1B includes two capacitors 120. · In the second embodiment, the Z-direction position of the flange 76 with respect to the control conductive portion 70B can be arbitrarily changed. In one example, the flange 76 may be formed on the side of the control contact back surface 70b rather than the control contact surface 70a. Further, the flange 76 may be formed flush with the control contact back surface 70b.

[0362] · In the second embodiment, the configuration of the substrate 10B can be arbitrarily changed. In one example, instead of a substrate made of a lead frame, the semiconductor light-emitting device 1B may include a substrate made of an insulating material, like the substrate 10 of the first embodiment. In this case, the substrate may be, for example, ceramics such as alumina or aluminum nitride, a silicon substrate, or glass epoxy or the like. The common conductive portion 30B, the element conductive portion 50B, the drive conductive portion 60B, and the control conductive portion 70B provided on this substrate include, for example, a surface conductive layer formed on the substrate surface, a back surface conductive layer formed on the substrate back surface, and a connection portion that electrically connects the surface conductive layer and the back surface conductive layer.

[0363] · In each of the above embodiments, the arrangement positions of the semiconductor light-emitting element 80 and the electronic component 100 on the contact surface 30a of the common conductive portion 30B can be arbitrarily changed. In one example, as shown in FIG. 83, the semiconductor light-emitting element 80 and the electronic component 100 may each be arranged on the first common contact surface portion 30c of the common conductive portion 30B. In the illustrated example, when viewed from the X direction, both the semiconductor light-emitting element 80 and the electronic component 100 are arranged at positions overlapping the capacitor 120.

[0364] The semiconductor light-emitting element 80 is arranged near the end portion 31b among the first common contact surface portions 30c in the Y direction. The semiconductor light-emitting element 80 is arranged in a portion of the first common contact surface portion 30c that faces the element conductive portion 50B in the X direction. In the illustrated example, the semiconductor light-emitting element 80 is arranged nearer to the end portion 31b of the first common contact surface portion 30c than the insulating portion 13 between the element conductive portion 50B and the drive conductive portion 60B in the Y direction. In this case, each wire W1 extends in the X direction when viewed from above. Also, the semiconductor light-emitting element 80 is arranged nearer to the element conductive portion 50B in the X direction among the first common contact surface portions 30c.

[0365] The electronic component 100 is arranged at an end portion near the second common contact surface portion 30d among the first common contact surface portions 30c in the Y direction. More specifically, the electronic component 100 is arranged in a portion of the first common contact surface portion 30c that faces the first drive contact surface portion 60c of the drive conductive portion 60B in the X direction. In this case, each wire W2 is connected to the first drive contact surface portion 60c. Also, the electronic component 100 is arranged nearer to the drive conductive portion 60B in the Y direction among the first common contact surface portions 30c. Also, the wire W3 is connected to the end portion closer to the first common contact surface portion 30c among both end portions in the Y direction of the control conductive portion 70B.

[0366] Note that when viewed from the X direction, a part of the semiconductor light-emitting element 80 may be arranged so as to protrude nearer to the end portion 31b of the common conductive portion 30B than the capacitor 120. Also, a part of the electronic component 100 may be arranged so as to protrude from the first common contact surface portion 30c to the second common contact surface portion 30d in the Y direction.

[0367] According to the configuration shown in FIG. 83, the conductive paths between the semiconductor light-emitting element 80 and the electronic component 100, and between the electronic component 100 and the capacitor 120 can be shortened respectively. Therefore, the parasitic capacitances based on the conductive paths between the semiconductor light-emitting element 80 and the electronic component 100, and between the electronic component 100 and the capacitor 120 can be reduced respectively.

[0368] · In each of the above embodiments, the configuration of the electronic component 100 can be arbitrarily changed. In one example, as shown in FIG. 84, the first drive electrode 101 and the second drive electrode 103 of the electronic component 100 are formed on the lower surface 100b of the electronic component 100 respectively. The control electrode 102 is formed on the upper surface 100a of the electronic component 100. The first drive electrode 101 and the second drive electrode 103 of the electronic component 100 are arranged spaced apart in the X direction while being aligned with each other in the Y direction. In FIG. 84, for convenience of explanation, the encapsulating resin 140 and the coating agent 141 are omitted.

[0369] As shown in FIG. 84, the electronic component 100 may be flip-chip mounted on the common contact surface 30a of the common conductive portion 30B and the drive contact surface 60a of the drive conductive portion 60B. In this case, the electronic component 100 is arranged so as to straddle the insulating portion 13 between the common conductive portion 30B and the drive conductive portion 60B. The first drive electrode 101 faces the first common contact surface portion 30c of the common conductive portion 30B in the Z direction, and the second drive electrode 103 faces the first drive contact surface portion 60c of the drive conductive portion 60B in the Z direction.

[0370] More specifically, the first drive electrode 101 is joined to a portion of the first common contact surface portion 30c that faces the first drive contact surface portion 60c of the drive conductive portion 60B in the X direction in the Z direction. The second drive electrode 103 is joined to the end portion closer to the first common contact surface portion 30c among the two end portions in the X direction of the first drive contact surface portion 60c.

[0371] With such an arrangement of the electronic component 100, the semiconductor light-emitting element 80 is arranged near the end portion 31b of the common contact surface 30a in the Y direction. More specifically, the semiconductor light-emitting element 80 is arranged in a portion of the first common contact surface portion 30c that faces the element conductive portion 50B in the X direction.

[0372] According to the configuration shown in FIG. 84, the conductive paths between the semiconductor light-emitting element 80 and the electronic component 100, and between the electronic component 100 and the capacitor 120 can be shortened respectively. Therefore, the parasitic capacitances based on the conductive paths between the semiconductor light-emitting element 80 and the electronic component 100, and between the electronic component 100 and the capacitor 120 can be reduced respectively. In addition, since the electronic component 100 is flip-mounted on the common contact surface 30a and the drive contact surface 60a, the parasitic capacitance between the electronic component 100 and the drive contact surface 60a can be reduced as compared with a configuration in which the first drive electrode 101 is connected to the drive contact surface 60a by a plurality of wires W2.

[0373] ·In a modified example of FIG. 84, the volume of the capacitor 120 may be reduced. Thereby, as shown in FIG. 85, the capacitor 120 may be brought closer to the semiconductor light-emitting element 80 and the electronic component 100. More specifically, the first electrode 121 of the capacitor 120 is adjacent in the X direction to the wire W1 at the end portion near the drive conductive portion 60B among the plurality of wires W1 of the semiconductor light-emitting element 80. The second electrode 122 of the capacitor 120 is adjacent in the X direction to the electronic component 100. In FIG. 85, for convenience of explanation, the encapsulating resin 140 and the coating agent 141 are shown omitted.

[0374] According to the configuration shown in FIG. 85, the conductive paths between the semiconductor light-emitting element 80 and the electronic component 100, between the semiconductor light-emitting element 80 and the capacitor 120, and between the electronic component 100 and the capacitor 120 can be shortened respectively. Therefore, the parasitic capacitances based on the conductive paths between the semiconductor light-emitting element 80 and the electronic component 100, between the semiconductor light-emitting element 80 and the capacitor 120, and between the electronic component 100 and the capacitor 120 can be reduced respectively.

[0375] · In the modification examples of FIGS. 83 to 85, the first electrode 91 and the second electrode 92 of the semiconductor light-emitting element 80 may be formed on the lower surface 80b of the semiconductor light-emitting element 80. The first electrode 91 and the second electrode 92 are arranged to be separated in the X direction in a state of being aligned with each other in the Y direction, for example. In this case, the semiconductor light-emitting element 80 is flip-chip mounted on the common contact surface 30a of the common conductive portion 30B and the element contact surface 50a of the element conductive portion 50B. Therefore, the semiconductor light-emitting element 80 is arranged so as to straddle the insulating portion 13 between the common conductive portion 30B and the element conductive portion 50B. The first electrode 91 faces the element contact surface 50a of the element conductive portion 50B in the Z direction, and the second electrode 92 faces the first common contact surface portion 30c in the Z direction.

[0376] 〔Supplementary Note〕 The technical idea that can be grasped from the above-described embodiment and the above-described modification examples will be described below.

[0377] (Supplementary Note A1) A semiconductor light-emitting device comprising: a substrate made of an insulating material; a common surface conductive layer formed on the surface of the substrate; a semiconductor light-emitting element arranged on a common contact surface formed on the surface of the common surface conductive layer; an electronic component arranged on the common contact surface and electrically connected to the semiconductor light-emitting element via the common surface conductive layer; and.

[0378] (Appendix A2) A substrate made of a conductive material, having a common contact surface formed on the surface of the substrate, and a common conductive portion formed of a part of the substrate, a semiconductor light-emitting element disposed on the common contact surface, an electronic component disposed on the common contact surface and electrically connected to the semiconductor light-emitting element via the common conductive portion, and a semiconductor light-emitting device including the same.

[0379] (Appendix A3) An electronic device on which the semiconductor light-emitting device is mounted. (Appendix B1) On the substrate-side contact surface that contacts the side wall portion of the frame in the substrate, a substrate-side recess is provided that is recessed downward from the substrate-side contact surface and formed from the inner surface to the outer surface of the side wall portion of the case, The ventilation portion is constituted by the side wall portion of the frame and the substrate-side recess, and the semiconductor light-emitting device according to Appendix D60.

[0380] (Appendix B2) On the side wall-side contact surface that contacts the substrate in the side wall portion of the frame, a side wall-side recess is provided that is recessed upward from the side wall-side contact surface and formed from the inner surface to the outer surface of the side wall portion, On the substrate-side contact surface that contacts the side wall portion of the frame in the substrate, a substrate-side recess is provided that is recessed downward from the substrate-side contact surface and formed from the inner surface to the outer surface of the side wall portion of the frame, The ventilation portion is constituted by the side wall-side recess and the substrate-side recess, and the semiconductor light-emitting device according to Appendix D60.

[0381] (Appendix B3) The ventilation portion is configured as a labyrinth structure, and the semiconductor light-emitting device according to any one of Appendix D60, Appendix B1, and Appendix B2. (Appendix B4) As the labyrinth structure, the ventilation part has a first ventilation part extending from the inner surface to the outer surface of the side wall part of the frame, a second ventilation part connected to the first ventilation part and extending in a direction intersecting the direction in which the first ventilation part extends, and a third ventilation part connected to the second ventilation part and extending from the inner surface to the outer surface. The semiconductor light-emitting device according to Appendix B3.

[0382] (Appendix B5) When viewed from a direction perpendicular to the planar direction, the ventilation part extends in a direction inclined with respect to a direction orthogonal to the direction in which the side wall part of the frame extends. The semiconductor light-emitting device according to any one of Appendix D60, Appendix B1, and Appendix B2.

[0383] (Appendix B6) When viewed from the planar direction, the ventilation part extends along the direction in which the side wall part of the frame extends. The semiconductor light-emitting device according to any one of Appendix D60, Appendix B1, and Appendix B2.

[0384] (Appendix B7) The inner opening region where the side wall side recess opens to the inner surface of the side wall part of the frame is smaller than the outer opening region where the side wall side recess opens to the outer surface of the side wall part of the frame. The semiconductor light-emitting device according to any one of Appendix D60, Appendix B1, and Appendix B2.

[0385] (Appendix B8) The inner opening region where the side wall side recess opens to the inner surface of the side wall part of the frame is larger than the outer opening region where the side wall side recess opens to the outer surface of the side wall part of the frame. The semiconductor light-emitting device according to any one of Appendix D60, Appendix B1, and Appendix B2.

[0386] (Appendix B9) The inner opening region where the side wall side recess opens to the inner surface of the side wall part of the frame is equal to the outer opening region where the side wall side recess opens to the outer surface of the side wall part of the frame. The semiconductor light-emitting device according to any one of Appendix D60, Appendix B1, and Appendix B2.

[0387] (Appendix B10) The frame is disposed inside the periphery of the substrate surface. The semiconductor light-emitting device according to appended note D39, wherein, when viewed from a direction perpendicular to the plane direction of the substrate, at least one of the common conductive portion, the control conductive portion, the element conductive portion, the drive conductive portion, and the control conductive portion is provided with a protruding portion extending outside the frame.

[0388] (Appended note C1) The electronic component has a lower surface on which a first drive electrode and a second drive electrode are formed. The second drive electrode is joined to the common conductive portion. The semiconductor light-emitting device according to appended note D1 or appended note D2, wherein the substrate has a drive conductive portion having a drive contact surface joined to face the first drive electrode.

[0389] (Appended note C2) The semiconductor light-emitting element and the electronic component are arranged in a predetermined direction. The common conductive portion has a common contact surface extending in the arrangement direction of the semiconductor light-emitting element and the electronic component. In the plane direction of the substrate, when the arrangement direction of the semiconductor light-emitting element and the electronic component is defined as a first direction and the direction orthogonal to the first direction is defined as a second direction, the common contact surface has a first common contact surface portion and a second common contact surface portion arranged in the first direction. The drive contact surface is arranged to be adjacent to the first contact surface in the second direction. The semiconductor light-emitting device according to appended note C1, wherein the semiconductor light-emitting element and the electronic component are arranged on the first common contact surface.

[0390] (Appended note D1) A substrate, a common conductive portion formed on the substrate, a semiconductor light-emitting element mounted on the common conductive portion, an electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, and a semiconductor light-emitting device including the above.

[0391] (Appended Note D2) The electronic component is the semiconductor light-emitting device described in Appended Note D1, which is used to drive the semiconductor light-emitting element.

[0392] (Appended Note D3) An element bottom electrode is formed on the bottom surface of the semiconductor light-emitting element. The electronic component has an upper surface on which a first drive electrode and a control electrode are formed, and a lower surface on which a second drive electrode is formed. The element bottom electrode and the second drive electrode are joined to the common conductive portion. The semiconductor light-emitting device described in Appended Note D2.

[0393] (Appended Note D4) The semiconductor light-emitting element and the electronic component are arranged in a predetermined direction. The common conductive portion has a common contact surface extending in the arrangement direction of the semiconductor light-emitting element and the electronic component. The semiconductor light-emitting element and the electronic component are arranged on the common contact surface. The semiconductor light-emitting device described in Appended Note D3.

[0394] (Appended Note D5) On the substrate, a drive conductive portion having a drive contact surface electrically connected to the first drive electrode by a wire, and a control conductive portion having a control contact surface electrically connected to the control electrode by a wire are formed. In the plane direction of the substrate, when the arrangement direction is defined as the first direction and the direction orthogonal to the first direction is defined as the second direction, the drive conductive portion and the control conductive portion are dispersedly arranged on both sides in the second direction with respect to the common contact surface. The semiconductor light-emitting device described in Appended Note D4.

[0395] (Appended Note D6) The semiconductor light-emitting device according to appended note D5, wherein the drive contact surface and the control contact surface are dispersedly arranged on both sides of the electronic component in the second direction.

[0396] (Appended note D7) The semiconductor light-emitting device according to appended note D5 or appended note D6, wherein the common contact surface is larger than the drive contact surface and the control contact surface.

[0397] (Appended note D8) An element upper surface electrode is formed on the upper surface of the semiconductor light-emitting element. On one side of the common contact surface in the second direction, an element conductive part having an element contact surface electrically connected to the element upper surface electrode is formed. On the other side of the common contact surface in the second direction, a connection conductive part electrically connected to the common conductive part is formed. The connection conductive part has a connection contact surface protruding in the second direction from the end on the side opposite to the element conductive part among both ends of the common contact surface in the second direction. The semiconductor light-emitting device according to appended note D6 or appended note D7.

[0398] (Appended note D9) The semiconductor light-emitting device according to appended note D8, wherein the element conductive part and the drive conductive part are arranged on the same side among both sides of the common contact surface in the second direction.

[0399] (Appended note D10) The semiconductor light-emitting device according to appended note D9, comprising a capacitor arranged so as to straddle between the element contact surface and the drive contact surface.

[0400] (Appended note D11) The connection conductive part has a connection contact back surface at a position on the back surface of the substrate opposite to the connection contact surface. The element conductive part has an element contact back surface at a position on the back surface of the substrate opposite to the element contact surface. The driving conductive portion has a driving contact back surface located at a position on the back surface of the substrate opposite to the driving contact surface. The control conductive portion has a control contact back surface located at a position on the back surface of the substrate opposite to the control contact surface. The semiconductor light-emitting device according to any one of Appendices D8 to D10.

[0401] (Appendix D12) The semiconductor light-emitting device according to Appendix D11, wherein the element contact back surface is larger than the driving contact back surface and the control contact back surface.

[0402] (Appendix D13) The semiconductor light-emitting device according to Appendix D11 or Appendix D12, wherein the common conductive portion has a common contact back surface located at a position on the back surface of the substrate opposite to the common contact surface.

[0403] (Appendix D14) The semiconductor light-emitting device according to Appendix D13, wherein the common contact back surface and the connection contact back surface are separated from each other.

[0404] (Appendix D15) The semiconductor light-emitting device according to Appendix D13 or Appendix D14, wherein the common contact back surface is larger than the connection contact back surface, the element contact back surface, the driving contact back surface, and the control contact back surface.

[0405] (Appendix D16) The substrate is made of an insulating material. The common contact surface, the connection contact surface, the element contact surface, the driving contact surface, and the control contact surface are the surfaces of a conductive layer formed on the surface of the substrate. The connection contact back surface, the element contact back surface, the driving contact back surface, and the control contact back surface are the surfaces of a conductive layer formed on the back surface of the substrate. The semiconductor light-emitting device according to any one of Supplementary Notes D11 to D15.

[0406] (Supplementary Note D17) The substrate is made of a conductive material, The common conductive portion, the connection conductive portion, the element conductive portion, the drive conductive portion, and the control conductive portion are parts of the substrate partitioned in a state of being insulated from each other by an insulating portion, The common contact surface, the connection contact surface, the element contact surface, the drive contact surface, and the control contact surface are formed on the surface of the substrate, The back surface of the connection contact, the back surface of the element contact, the back surface of the drive contact, and the back surface of the control contact are formed on the back surface of the substrate. The semiconductor light-emitting device according to any one of Supplementary Notes D11 to D15.

[0407] (Supplementary Note D18) At least one peripheral edge of the common conductive portion, the connection conductive portion, the element conductive portion, the drive conductive portion, and the control conductive portion is provided with a recess that is recessed in a direction perpendicular to the plane direction of the substrate, The insulating portion enters the recess. The semiconductor light-emitting device according to Supplementary Note D17.

[0408] (Supplementary Note D19) The recess is provided at least at one peripheral edge of the common contact surface, the connection contact surface, the element contact surface, the drive contact surface, and the control contact surface. The semiconductor light-emitting device according to Supplementary Note D18.

[0409] (Supplementary Note D20) At least one peripheral edge of the common conductive portion, the connection conductive portion, the element conductive portion, the drive conductive portion, and the control conductive portion is provided with a flange, In the semiconductor light-emitting device according to any one of Supplementary Notes D17 to D19, an insulating portion extends between the flange and the back surface of the substrate on the side opposite t...

Claims

1. A substrate, A common conductive portion formed on the substrate, A semiconductor light-emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, comprising The electronic component is covered with a light-shielding resin material and is joined to the common conductive portion by a conductive bonding material, and at least a portion of the conductive bonding material exposed from the electronic component is covered with a coating agent that suppresses sulfidation A semiconductor light-emitting device.

2. A substrate, A common conductive portion formed on the substrate, A semiconductor light-emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, comprising The electronic component is joined to the common conductive portion by a conductive bonding material, and at least a portion of the conductive bonding material exposed from the electronic component is covered with a coating agent that suppresses sulfidation A semiconductor light-emitting device.

3. A substrate, A common conductive portion formed on the substrate, A semiconductor light-emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, A case that houses the semiconductor light-emitting element and the electronic component, and comprising The electronic component is joined to the common conductive portion by a conductive bonding material, At least the portion of the conductive bonding material that is exposed from the electronic component is covered with a coating agent that suppresses sulfidation. Semiconductor light-emitting device. **Claim 4** A substrate, A common conductive portion formed on the substrate, A semiconductor light-emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, comprising: The upper surface of the electronic component is located below the upper surface of the semiconductor light-emitting element, The electronic component is joined to the common conductive portion by a conductive bonding material, At least the portion of the conductive bonding material that is exposed from the electronic component is covered with a coating agent that suppresses sulfidation. Semiconductor light-emitting device. **Claim 5** A substrate, A common conductive portion formed on the substrate, A semiconductor light-emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, A case that houses the semiconductor light-emitting element and the electronic component, comprising: The electronic component is covered with a light-shielding resin material. Semiconductor light-emitting device. **Claim 6** A substrate, A common conductive portion formed on the substrate, A semiconductor light-emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, A case that houses the semiconductor light-emitting element and the electronic component, comprising: The electronic component is joined to the common conductive portion by a conductive joining material, At least a portion of the conductive joining material that is exposed from the electronic component is covered with a coating agent that suppresses sulfidation. A semiconductor light-emitting device.

7. A substrate, A common conductive portion formed on the substrate, A semiconductor light-emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, A case that houses the semiconductor light-emitting element and the electronic component, and comprising The upper surface of the electronic component is located below the upper surface of the semiconductor light-emitting element. A semiconductor light-emitting device.

8. A case that houses the semiconductor light-emitting element and the electronic component is provided. The semiconductor light-emitting device according to any one of claims 1, 3, and 4.

9. The semiconductor light-emitting element and the electronic component are arranged in a predetermined direction, The case has a first side wall portion and a second side wall portion that are both side wall portions in the arrangement direction of the semiconductor light-emitting element and the electronic component, The semiconductor light-emitting element is arranged closer to the first side wall portion than the electronic component, The electronic component is arranged closer to the second side wall portion than the semiconductor light-emitting element. The semiconductor light-emitting device according to any one of claims 5 to 8.

10. A substrate, A common conductive portion formed on the substrate, A semiconductor light-emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, A case that houses the semiconductor light-emitting element and the electronic component, comprising, the semiconductor light-emitting element and the electronic component are arranged in a predetermined direction, the case is made of a light-shielding material and has a frame that opens upward, a lid that closes the opening of the frame, and first and second side wall portions that are both side walls in the arrangement direction of the semiconductor light-emitting element and the electronic component, the semiconductor light-emitting element is disposed closer to the first side wall portion than the electronic component, the electronic component is disposed closer to the second side wall portion than the semiconductor light-emitting element Semiconductor light-emitting device.

11. A substrate, a common conductive portion formed on the substrate, a semiconductor light-emitting element mounted on the common conductive portion, an electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, a case for housing the semiconductor light-emitting element and the electronic component, comprising, the case is made of a light-shielding material and is formed in a box shape including a lid facing the substrate in a direction perpendicular to the plane direction of the substrate and a side wall portion hanging down from the periphery of the lid, an opening penetrating the lid in a direction perpendicular to the plane direction is provided in a portion of the lid facing the semiconductor light-emitting element, a light diffusion plate is attached to the opposite side of the lid from the semiconductor light-emitting element in a direction perpendicular to the plane direction so as to cover the opening, the light diffusion plate transmits and diffuses light from the semiconductor light-emitting element Semiconductor light-emitting device.

12. A substrate, a common conductive portion formed on the substrate, a semiconductor light-emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, A light-shielding partition wall that partitions the semiconductor light-emitting element and the electronic component, and comprising The electronic component is covered with a light-shielding resin material Semiconductor light-emitting device.

13. A substrate, A common conductive portion formed on the substrate, A semiconductor light-emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, A case that houses the semiconductor light-emitting element and the electronic component, A light-shielding partition wall that partitions the semiconductor light-emitting element and the electronic component, and comprising The electronic component is covered with a light-shielding resin material Semiconductor light-emitting device.

14. A substrate, A common conductive portion formed on the substrate, A semiconductor light-emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, A light-shielding partition wall that partitions the semiconductor light-emitting element and the electronic component, and comprising The upper surface of the electronic component is located below the upper surface of the semiconductor light-emitting element Semiconductor light-emitting device.

15. A substrate, A common conductive portion formed on the substrate, A semiconductor light-emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, A case that houses the semiconductor light-emitting element and the electronic component, A light-shielding partition wall that separates the semiconductor light-emitting element and the electronic component, and includes The semiconductor light-emitting element and the electronic component are arranged in a predetermined direction, The case has a first side wall portion and a second side wall portion that are both side wall portions in the arrangement direction of the semiconductor light-emitting element and the electronic component, The semiconductor light-emitting element is disposed closer to the first side wall portion than the electronic component, The electronic component is disposed closer to the second side wall portion than the semiconductor light-emitting element Semiconductor light-emitting device.

16. A substrate, A common conductive portion formed on the substrate, A semiconductor light-emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, A case that houses the semiconductor light-emitting element and the electronic component, A light-shielding partition wall that separates the semiconductor light-emitting element and the electronic component, and includes The partition wall is provided in the case Semiconductor light-emitting device.

17. A substrate, A common conductive portion formed on the substrate, A semiconductor light-emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, A case that houses the semiconductor light-emitting element and the electronic component, and includes The semiconductor light-emitting element and the electronic component are arranged in a predetermined direction, The case has a first side wall portion and a second side wall portion that are both side wall portions in the arrangement direction of the semiconductor light-emitting element and the electronic component, The semiconductor light-emitting element is disposed closer to the first side wall portion than the electronic component, The electronic component is disposed closer to the second side wall portion than the semiconductor light-emitting element, The semiconductor light-emitting element and the electronic component are provided with a light-shielding partition wall for partitioning them, The partition wall is provided in the case Semiconductor light-emitting device.

18. A substrate, A common conductive portion formed on the substrate, A semiconductor light-emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, A case for housing the semiconductor light-emitting element and the electronic component, and comprising The semiconductor light-emitting element is housed in a housing space formed by the substrate and the case, A ventilation portion for communicating the housing space to the outside is provided between the substrate and the case Semiconductor light-emitting device.

19. A substrate, A common conductive portion formed on the substrate, A semiconductor light-emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, A case for housing the semiconductor light-emitting element and the electronic component, and comprising The semiconductor light-emitting element and the electronic component are arranged in a predetermined direction, The case has a first side wall portion and a second side wall portion which are both side wall portions in the arrangement direction of the semiconductor light-emitting element and the electronic component, The semiconductor light-emitting element is disposed closer to the first side wall portion than the electronic component, The electronic component is disposed closer to the second side wall portion than the semiconductor light emitting element. The semiconductor light emitting element is accommodated in an accommodation space formed by the substrate and the case. A ventilation portion that allows the accommodation space to communicate with the outside is provided between the substrate and the case. Semiconductor light emitting device.

20. A substrate, A common conductive portion formed on the substrate, A semiconductor light emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light emitting element via the common conductive portion, A case that houses the semiconductor light emitting element and the electronic component, comprising On the substrate, A drive conductive portion having a drive contact surface electrically connected to the first drive electrode of the electronic component by a wire, A control conductive portion having a control contact surface electrically connected to the control electrode of the electronic component by a wire, An element conductive portion having an element contact surface electrically connected to the element upper surface electrode of the semiconductor light emitting element is formed, The side wall portion of the case is disposed inside the peripheral edge of the substrate surface facing the side wall portion of the case on the substrate in a direction perpendicular to the plane direction of the substrate. At least one of the common conductive portion, the element conductive portion, the drive conductive portion, and the control conductive portion is provided with a protruding portion extending outside the side wall portion of the case. Semiconductor light emitting device.

21. A substrate, A common conductive portion formed on the substrate, A semiconductor light emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light emitting element via the common conductive portion, A case for housing the semiconductor light-emitting element and the electronic component, comprising The semiconductor light-emitting element and the electronic component are arranged in a predetermined direction, The case has a first side wall portion and a second side wall portion which are both side wall portions in the arrangement direction of the semiconductor light-emitting element and the electronic component, The semiconductor light-emitting element is disposed closer to the first side wall portion than the electronic component, The electronic component is disposed closer to the second side wall portion than the semiconductor light-emitting element, On the substrate, a drive conductive portion having a drive contact surface electrically connected to a first drive electrode of the electronic component by a wire, a control conductive portion having a control contact surface electrically connected to a control electrode of the electronic component by a wire, and an element conductive portion having an element contact surface electrically connected to an element upper surface electrode of the semiconductor light-emitting element are formed, The side wall portion of the case is disposed inside of a peripheral edge of a substrate surface facing the side wall portion of the case on the substrate in a direction perpendicular to a plane direction of the substrate, At least one of the common conductive portion, the element conductive portion, the drive conductive portion, and the control conductive portion is provided with a protruding portion extending outside of the side wall portion of the case Semiconductor light-emitting device.

22. A substrate, a common conductive portion formed on the substrate, a semiconductor light-emitting element mounted on the common conductive portion, an electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, comprising a light-transmissive encapsulating resin for encapsulating the semiconductor light-emitting element and the electronic component, A light-shielding partition wall is provided in a portion of the encapsulating resin between the semiconductor light-emitting element and the electronic component Semiconductor light-emitting device.

23. A substrate, A common conductive portion formed on the substrate, A semiconductor light-emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, comprising: housing the semiconductor light-emitting element and the electronic component, and a frame that opens upward is attached to the substrate, The frame has a partition wall that partitions the semiconductor light-emitting element from the electronic component, and a first housing portion that houses the semiconductor light-emitting element and a second housing portion that houses the electronic component are provided separately by the partition wall Semiconductor light-emitting device.

24. A substrate, A common conductive portion formed on the substrate, A semiconductor light-emitting element mounted on the common conductive portion, An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion, comprising: It includes a light-shielding partition wall that partitions the semiconductor light-emitting element and the electronic component Semiconductor light-emitting device.

25. The semiconductor light-emitting element is a semiconductor laser element The semiconductor light-emitting device according to any one of claims 1 to 24.

26. The semiconductor light-emitting element is a VCSEL element The semiconductor light-emitting device according to claim 25.

Images