Substrate processing apparatus, substrate processing method, and method of manufacturing semiconductor device

Abstract

To provide a substrate processing device, a semiconductor manufacturing device, a substrate processing method, and a semiconductor device processing method in which the stirring efficiency of a processing liquid is improved.SOLUTION: A substrate processing device according to an embodiment includes a processing tank in which a chemical agent is stored and a substrate is immersed in the chemical agent for processing, a holding member that holds the substrate, a rectifying plate disposed on the holding member, extending in the vertical direction with an inclination with respect to the horizontal direction, and having a vertical length longer than the horizontal length in cross section, and a bubble ejection tube disposed under the holding member and ejecting gas onto the medicine.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Embodiments of the present invention relate to a substrate processing apparatus, a substrate processing method, and a method for manufacturing a semiconductor device.

Background Art

[0002] In some cases, a silicon nitride film is selectively etched with respect to a silicon oxide film on a substrate having a laminate in which a silicon nitride film and a silicon oxide film are alternately formed. In this case, a phosphoric acid solution is generally used as an etching solution. In such an etching process, when a silicon compound is added to the phosphoric acid solution, the silica concentration in the phosphoric acid solution increases, and the selectivity of the silicon nitride film with respect to the silicon oxide film can be increased. At this time, if the silica concentration in the phosphoric acid solution is low, the selectivity of the silicon nitride film with respect to the silicon oxide film is low, and the silicon oxide film may be corroded. On the other hand, when the silica concentration in the phosphoric acid solution is high, silica is likely to be saturated, and silica may precipitate on the substrate immersed in the phosphoric acid solution.

[0003] In order to control the silica concentration in the phosphoric acid solution, it is necessary to make the phosphoric acid solution in which the substrate is immersed uniform.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Patent Document 5

Summary of the Invention

Problems to be Solved by the Invention

[0005] Embodiments according to the present disclosure provide a substrate processing apparatus, a substrate processing method, and a method for manufacturing a semiconductor device, which improve the stirring efficiency of a processing liquid.

Means for Solving the Problems

[0006] A substrate processing apparatus according to an embodiment includes a processing tank capable of storing a chemical and performing a process by immersing a substrate in the chemical, a holding member for holding the substrate, a rectifying plate disposed on the holding member, having an inclination with respect to the horizontal direction and extending in the vertical direction, and having a length in the vertical direction in a cross section longer than a length in the horizontal direction, and a bubble discharge tube disposed under the holding member and discharging a gas into the chemical.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

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Figure 9B

Figure 10A

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Figure 10C

Figure 11A

Figure 11B

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Figure 12B

Figure 13

Figure 14

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Figure 16

Mode for Carrying Out the Invention

[0008] Hereinafter, the substrate processing apparatus, semiconductor manufacturing apparatus, substrate processing method, and semiconductor device processing method according to the present embodiment will be specifically described with reference to the drawings. In the following description, elements having substantially the same function and configuration are denoted by the same reference numerals or reference numerals with an alphabet added after the same reference numeral, and will be described repeatedly only when necessary. Each of the embodiments shown below illustrates an apparatus and method for embodying the technical idea of this embodiment. The technical idea of the embodiment is not specified to the following in terms of the material, shape, structure, arrangement, etc. of the components. The technical idea of the embodiment may be variously modified with respect to the claims.

[0009] For the sake of clarity in the description, the drawings may schematically represent the width, thickness, shape, etc. of each part compared to the actual embodiment, but this is merely an example and does not limit the interpretation of the present invention. In this specification and each drawing, elements having the same functions as those described with respect to the previously presented drawings may be denoted by the same reference numerals, and redundant descriptions may be omitted.

[0010] In this specification, expressions such as "α is A, B, or C", "α is any one of A, B, and C", "α is selected from the group consisting of A, B, and C", etc. do not exclude the case where α includes a plurality of combinations of A to C, unless otherwise explicitly stated. Furthermore, these expressions do not exclude the case where α includes other elements.

[0011] In this specification, "horizontal" may refer to the direction (XY direction) parallel to the bottom surface of the inner tank, and "vertical" may refer to the direction (Z direction) substantially perpendicular to the horizontal direction.

[0012] The following embodiments can be combined with each other as long as no technical contradiction occurs.

[0013] <First Embodiment> FIG. 1 is a diagram schematically showing the overall configuration of a substrate processing apparatus according to an embodiment. The substrate processing apparatus 1 according to this embodiment is, for example, a wet etching processing apparatus that removes a silicon nitride film (not shown in FIG. 1) provided on a substrate 20 with a solution 30 containing phosphoric acid (hereinafter referred to as a phosphoric acid solution). As shown in FIG. 1, the substrate processing apparatus 1 includes a processing tank 11, a circulation path 12, a heating unit 13, an input unit 14, a pump 15, a filter 16, a holding member 17, a bubble discharge tube 18, and a rectifying plate 19.

[0014] The processing tank 11 is a container having an inner tank 111 and an outer tank 112. The inner tank 111 is formed in a box shape having an upper end opening 111a. The inner tank 111 stores a phosphoric acid solution 30 therein, that is, an etching solution (processing solution) for a silicon nitride film. The temperature, phosphoric acid concentration, and silica concentration of the phosphoric acid solution 30 stored inside the inner tank 111 are optimized for etching the silicon nitride film provided on the substrate 20.

[0015] The inner tank 111 can accommodate a wafer-shaped (disk-shaped) substrate 20 vertically (the main surface is in the vertical direction (YZ direction)). The substrate 20 can be accommodated, for example, up to 50 pieces in one inner tank 111 at most. Although FIG. 1 shows one substrate 20 inside the inner tank 111, a plurality of substrates 20 can be arranged and accommodated in the depth direction (X direction) of the paper surface. When the substrate 20 is immersed in the phosphoric acid solution 30, the silicon nitride film provided on the substrate 20 dissolves in the phosphoric acid solution 30 and is removed from the substrate 20. Therefore, the inner tank 111 has a depth sufficient to completely immerse the vertically accommodated substrate 20 in the phosphoric acid solution 30. The upper end opening 111a of the inner tank 111 is higher than the upper end portion of the vertically accommodated substrate 20. The distance from the upper end opening 111a of the inner tank 111 to the upper end portion of the vertically accommodated substrate 20 is preferably 3 cm or more.

[0016] The outer tank 112 has an upper end opening 112a that surrounds the upper end opening 111a of the inner tank 111 over the entire circumference. The outer tank 112 recovers the phosphoric acid solution 30 that has overflowed from the upper end opening 111a of the inner tank 111.

[0017] The circulation path 12 communicates with the bottom of the outer tank 112 and the bottom of the inner tank 111 to circulate the phosphoric acid solution 30 through the processing tank 11. Specifically, the circulation path 12 returns the phosphoric acid solution 30 that has flowed out to the outer tank 112 to the inner tank 111. In the process of this reflux, the phosphoric acid solution 30 passes through the heating unit 13, the pump 15, and the filter 16.

[0018] The heating unit 13 is provided in the middle of the circulation path 12. The heating unit 13 heats the phosphoric acid solution 30. The heating unit 13 is, for example, a line heater using a halogen lamp as a heat source.

[0019] In this embodiment, the heating control unit 13a adjusts the heating temperature of the heating unit 13 so that the phosphoric acid solution 30 is heated at a constant temperature. The phosphoric acid solution 30 (heated solution) heated by the heating unit 13 is supplied into the inner tank 111 through the filter 16.

[0020] The charging unit 14 is disposed above the outer tank 112. The charging unit 14 charges water into the outer tank 112. Due to the evaporation of moisture and the etching process in the inner tank 111, the concentration of the phosphoric acid solution 30 recovered in the outer tank 112 may change. Therefore, in order to adjust the concentration of the phosphoric acid solution 30 refluxed to the inner tank 111 to an optimal concentration for selective etching of the silicon nitride film, water 40 is charged from the charging unit 14.

[0021] Note that for the above concentration adjustment, the charging unit 14 may charge phosphoric acid into the outer tank 112 instead of water 40. Alternatively, the charging unit 14 may charge into the outer tank 112 a phosphoric acid solution preliminarily adjusted to an optimal concentration for etching the silicon nitride film, that is, the same phosphoric acid concentration as the phosphoric acid solution 30 initially stored in the inner tank 111 (the phosphoric acid solution 30 before the heated solution is supplied). In this embodiment, it is desirable that the temperature of the water, phosphoric acid, or phosphoric acid solution is lower than the temperature of the phosphoric acid solution 30 stored in the inner tank 111 so that bumping does not occur in the outer tank 112.

[0022] The pump 15 is provided on the upstream side of the circulation path 12 from the heating unit 13. By the pump 15 sucking the phosphoric acid solution 30 from the outer tank 112, the phosphoric acid solution 30 recovered in the outer tank 112 moves to the heating unit 13. Further, by the pump 15 pressurizing the phosphoric acid solution 30 heated by the heating unit 13, this phosphoric acid solution 30 is supplied to the inner tank 111.

[0023] The filter 16 is provided on the downstream side of the circulation path 12 with respect to the heating unit 13. The filter 16 removes the particles contained in the phosphoric acid solution 30 in the circulation path 12. This particles include, for example, silica dissolved in the phosphoric acid solution 30 by the etching process of the substrate 20. The filter 16 may be provided on the upstream side of the circulation path 12 with respect to the heating unit 13.

[0024] FIG. 2 is a schematic view showing the internal structure of the inner tank 111. As shown in FIG. 2, inside the inner tank 111, the holding member 17 holds a plurality of substrates 20 arranged in a row in the horizontal direction (X direction) at a predetermined interval. Further, the holding member 17 includes a lifting mechanism 171 that raises and lowers the held substrate 20 in the vertical direction (Z direction) with respect to the inner tank 111. By the lifting operation of the lifting mechanism 171, the substrate 20 before the etching process can be automatically immersed in the phosphoric acid solution 30 stored in the inner tank 111, and the substrate 20 after the etching process can be automatically taken out from the inner tank 111.

[0025] As shown in FIG. 2, a chemical liquid discharge pipe 121 is provided at the bottom of the inner tank 111. The chemical liquid discharge pipe 121 is included in a part of the outlet side of the above-described circulation path 12, and includes a chemical liquid discharge port 123 that supplies the phosphoric acid solution 30 to the inner tank 111. Although FIG. 2 shows one chemical liquid discharge pipe 121, a plurality of chemical liquid discharge pipes 121 are arranged side by side in the depth direction (Y direction) of the paper surface. The chemical liquid discharge pipe 121 is disposed below the holding member 17 that holds the substrate 20. The chemical liquid discharge pipe 121 extends in the direction (X direction) in which a plurality of substrates 20 are arranged in a row.

[0026] The flow rate of the phosphoric acid solution 30 supplied from the chemical liquid discharge pipe 121 is preferably 10 L / min or more per one inner tank 111. The chemical liquid discharge pipe 121 is preferably arranged evenly with respect to the substrate 20. In this case, each chemical liquid discharge pipe 121 may supply the phosphoric acid solution 30 having substantially the same flow rate to the inner tank 111. However, it is not limited to this, and each chemical liquid discharge pipe 121 may supply the phosphoric acid solution 30 having different flow rates to the inner tank 111 depending on the arrangement with respect to the substrate 20.

[0027] Also, as shown in FIG. 2, a bubble discharge tube 18 is provided at the bottom of the inner tank 111. The bubble discharge tube 18 is provided with a bubble discharge port 18a for supplying bubbles (gas) to stir the phosphoric acid solution 30 stored in the inner tank 111. The bubbles supplied by the bubble discharge tube 18 may contain, for example, nitrogen. Although FIG. 2 shows one bubble discharge tube 18, a plurality of bubble discharge tubes 18 are arranged side by side in the depth direction (Y direction) of the drawing. The bubble discharge tube 18 is disposed below the holding member 17 that holds the substrate 20. The bubble discharge tube 18 and the chemical liquid discharge tube 121 may be arranged at the same height, or the bubble discharge tube 18 may be arranged above the chemical liquid discharge tube 121. When the bubble discharge tube 18 is arranged above the chemical liquid discharge tube 121, it is preferable that at least the chemical liquid discharge port 123 does not overlap the bubble discharge tube 18 in the vertical direction (Z direction). The bubble discharge tube 18 extends in the direction (X direction) in which a plurality of substrates 20 are arranged in a row.

[0028] Preferably, six or more bubble discharge tubes 18 are arranged in one inner tank 111. The flow rate of the bubbles supplied from the bubble discharge tube 18 is preferably 15 L / min or more per inner tank 111. The bubble discharge tubes 18 are preferably arranged evenly with respect to the substrate 20. In this case, each bubble discharge tube 18 may supply bubbles of substantially the same flow rate to the phosphoric acid solution 30. However, it is not limited thereto, and each bubble discharge tube 18 may supply bubbles of different flow rates to the phosphoric acid solution 30 depending on the arrangement with respect to the substrate 20.

[0029] FIG. 3 is a perspective view schematically showing the structure of the bubble discharge tube 18. Since the structure of the chemical liquid discharge tube 121 according to the present embodiment is the same as that of the bubble discharge tube 18, the structure of the bubble discharge tube 18 will be described here as an example. A plurality of bubble discharge ports 18a communicating with the inside of the inner tank 111 are provided in a row on the upper surface of the outer periphery of the bubble discharge tube 18. The bubble discharge ports 18a are arranged at substantially equal intervals in the direction (X direction) in which a plurality of substrates 20 are arranged in a row with respect to the substrate 20. The shape of the bubble discharge port 18a does not have to be a perfect circle. The number of the bubble discharge ports 18a is preferably 60 or more per substrate (wafer). The number of the bubble discharge ports 18a is preferably 3000 or more, and more preferably 3500 or more, for example, in one inner tank 111. Each bubble discharge port 18a arranged in one bubble discharge tube 18 may supply bubbles of the same flow rate to the phosphoric acid solution 30. By arranging the bubble discharge ports 18a and the chemical liquid discharge ports 123 in this way, the bubbles supplied by the bubble discharge tube 18 and the phosphoric acid solution 30 supplied by the chemical liquid discharge tube 121 can pass between the bottom of the inner tank 111 and the substrate 20 to form a flow of bubbles and the phosphoric acid solution 30 (see the arrow in FIG. 2).

[0030] Also, as shown in FIG. 2, a rectifying plate 19 is provided above the inner tank 111. The rectifying plate 19 rectifies the flow formed by the bubbles supplied by the bubble discharge tube 18 and the phosphoric acid solution 30 supplied by the chemical liquid discharge tube 121 to realize a uniform gas-liquid two-phase flow in the phosphoric acid solution 30 stored in the inner tank 111. The rectifying plate 19 is arranged on the substrate 20 held by the holding member 17. In FIG. 2, the rectifying plate 19 is arranged so as to be completely immersed in the phosphoric acid solution 30 stored in the inner tank 111. However, it is not limited to this, and the rectifying plate 19 may partially protrude from the phosphoric acid solution 30.

[0031] FIG. 4 is an XZ cross-sectional view in the direction in which the bubble discharge tube extending schematically shows the structure of the rectifying plate 19. FIG. 5 is a perspective view schematically showing the structure of the rectifying plate 19. In the present embodiment, the rectifying plate 19 has a lattice shape, and since the structure of the XZ cross-section and the structure of the YZ cross-section are the same, the structure of the XZ cross-section will be described as an example in FIG. 4. The rectifying plate 19 extends in the vertical direction (Z direction). However, it is not limited to this, and the rectifying plate 19 may extend in the vertical direction (Z direction) with an inclination with respect to the horizontal direction (X direction). That is, the cross-section cut in the vertical direction (Z direction) with respect to the main surface 192 (YZ surface) of the rectifying plate 19 is longer in the vertical direction (Z direction) than in the horizontal direction (X direction). The thickness d1 of the rectifying plate 19 (the distance in the horizontal direction (X direction) of the cross-section cut in the vertical direction (Z direction) with respect to the main surface 192) is preferably, for example, 5 mm or less. By the thickness d1 of the rectifying plate 19 being 5 mm or less, it is possible to suppress the accumulation of bubbles under the rectifying plate 19. The vertical length d2 of the rectifying plate 19 is preferably, for example, 3 cm or more. By the vertical length d2 of the rectifying plate 19 being 3 cm or more, it is possible to receive the flow formed by the bubbles supplied by the bubble discharge tube 18 and the phosphoric acid solution 30 supplied by the chemical liquid discharge tube 121, and realize a uniform gas-liquid two-phase flow in the phosphoric acid solution 30 stored in the inner tank 111. The rectifying plate 19 further extends in the horizontal direction (Y direction). The rectifying plate 19 may, for example, span from one side of the inner tank 111 to the opposite side. The horizontal length of the rectifying plate 19 is not particularly limited as long as it can be arranged in the inner tank 111.

[0032] As shown in FIGS. 4 and 5, the rectifying plate 19 is composed of a plurality of plate-like members. The plurality of plate-like members may be arranged substantially parallel so as to span from one side of the inner tank 111 to the opposite side, for example. The number of the plurality of plate-like members arranged substantially parallel is preferably, for example, 5 or more. The plurality of plate-like members arranged substantially parallel are preferably arranged at equal intervals. The distance d3 between the plurality of plate-like members arranged substantially parallel is preferably in the range of, for example, 10 mm or more and 60 mm or less.

[0033] A plurality of other plate-like members arranged substantially in parallel may be arranged so as to intersect with the plurality of plate-like members arranged substantially in parallel. That is, the plurality of plate-like members may be arranged in a lattice pattern in the horizontal plane direction (XY direction). The number of the plurality of other plate-like members arranged substantially in parallel is preferably, for example, 5 or more. The plurality of other plate-like members arranged substantially in parallel are preferably arranged at equal intervals. The distance between the plurality of other plate-like members arranged substantially in parallel is preferably, for example, in the range of 10 mm or more and 60 mm or less. That is, the interval between the plurality of plate-like members arranged in a lattice pattern is preferably in the range of 10 mm or more and 60 mm or less. By configuring the rectifying plate 19 in this way, the bubbles supplied by the bubble discharge tube 18 and the phosphoric acid solution 30 supplied by the chemical liquid discharge tube 121 can pass between the plurality of plate-like members from the bottom of the inner tank 111, and a flow of the bubbles and the phosphoric acid solution 30 can be formed (see the arrows in FIG. 4). The bubbles supplied by the bubble discharge tube 18 can be discharged from the phosphoric acid solution 30 through the rectifying plate 19, and it is possible to prevent the bubbling substrate 20 from being exposed from the phosphoric acid solution 30 on the surface of the phosphoric acid solution 30.

[0034] The substrate processing apparatus 1 according to the present embodiment can improve the stirring efficiency of the phosphoric acid solution 30 by realizing a uniform gas-liquid two-phase flow in the phosphoric acid solution 30 stored in the inner tank 111 by the flow of the bubbles and the phosphoric acid solution 30.

[0035] <Second Embodiment> Hereinafter, a substrate processing method using the substrate processing apparatus 1 according to the present embodiment will be described. FIG. 6 is a cross-sectional view of a substrate 20 to be subjected to an etching process. The substrate 20 is a semiconductor substrate for manufacturing a stacked memory in which electrode layers are stacked.

[0036] As shown in FIG. 6, the substrate 20 has a silicon substrate 21 and a stacked film 22. The stacked film 22 includes a silicon oxide film 221 and a silicon nitride film 222 that are alternately stacked. Further, the substrate 20 has a trench 23 that penetrates the stacked film 22.

[0037] When the substrate 20 is accommodated inside the inner tank 111 by the holding member 17, the phosphoric acid solution 30 stored inside the inner tank 111 penetrates into the laminated film 22 from the trench 23. As a result, the silicon nitride film 222 is removed. At this time, the silica concentration increases. Note that an electrode layer is formed at the location where the silicon nitride film 222 has been removed by a subsequent process.

[0038] The phosphoric acid solution 30 that has overflowed from the inner tank 111 is recovered in the outer tank 112. The phosphoric acid solution 30 recovered in the outer tank 112 is sucked by the pump 15 and sent to the heating unit 13. The heating unit 13 heats the phosphoric acid solution 30. The phosphoric acid solution 30 heated by the heating unit 13 is discharged into the inner tank 111 from the chemical liquid discharge port 123 of the chemical liquid discharge pipe 121 by the pump 15. Bubbles are discharged into the inner tank 111 from the bubble discharge port 18a of the bubble discharge pipe 18. The flow of the bubbles and the phosphoric acid solution 30 passes between the substrates 20 and passes between the rectifying plates 19, so that a uniform gas-liquid two-phase flow can be realized in the phosphoric acid solution 30 stored in the inner tank 111.

[0039] In the substrate 20, when the amount of the silicon nitride film 222 dissolved in the phosphoric acid solution 30 increases, the amount of silica dissolved in the phosphoric acid solution 30 increases. Therefore, silica is likely to precipitate in the trench 23. On the other hand, when the silica concentration in the phosphoric acid solution is low, the selectivity ratio of the silicon nitride film to the silicon oxide film becomes low, and the silicon oxide film may be corroded. By making the phosphoric acid solution 30 in which the substrate 20 is immersed uniform, the silica concentration in the phosphoric acid solution can be controlled.

[0040] The substrate processing method using the substrate processing apparatus 1 according to the present embodiment can improve the stirring efficiency of the phosphoric acid solution 30 by realizing a uniform gas-liquid two-phase flow in the phosphoric acid solution 30 stored in the inner tank 111 by the flow of the bubbles and the phosphoric acid solution 30.

[0041] <Modification Example 1> The configuration of the substrate processing apparatus according to this modification is the same as that of the substrate processing apparatus according to the first embodiment, except for the rectifying plate. The description that is the same as that of the first embodiment is omitted, and here, the parts different from the configuration of the substrate processing apparatus according to the first embodiment will be described.

[0042] FIG. 7(A) is a diagram showing the rectifying plate according to the first embodiment. FIGS. 7(B) and 7(C) are diagrams showing the rectifying plates according to the modification. As shown in FIG. 7(A), in the first embodiment, the rectifying plate 19 is flat. However, it is not limited to this. As shown in FIG. 7(B), the rectifying plate 19a may be porous, and as shown in FIG. 7(C), the rectifying plate 19b may be mesh-shaped. The rectifying plates 19a and 19b only need to have resistance to the flow formed by the bubbles supplied by the bubble discharge tube 18 and the phosphoric acid solution 30 supplied by the chemical liquid discharge tube 121. The rectifying plates 19a and 19b may have, for example, 90% or less holes with respect to 100% of the plate. By the holes of the rectifying plates 19a and 19b being 90% or less with respect to 100% of the plate, the flow formed by the bubbles supplied by the bubble discharge tube 18 and the phosphoric acid solution 30 supplied by the chemical liquid discharge tube 121 can be adjusted, and a uniform gas-liquid two-phase flow can be realized in the phosphoric acid solution 30 stored in the inner tank 111.

[0043] <Modification 2> The configuration of the substrate processing apparatus according to this modification is the same as that of the substrate processing apparatus according to the first embodiment, except for the structure of the rectifying plate. The description that is the same as that of the first embodiment is omitted, and here, the parts different from the configuration of the substrate processing apparatus according to the first embodiment will be described.

[0044] FIG. 8 is an XZ cross-sectional view in the direction in which the bubble discharge tube extends, schematically showing the structure of the rectifying plate according to the modified example. In this modified example, the rectifying plate 19c is lattice-shaped, and since the structure of the XZ cross-section is the same as that of the YZ cross-section, the structure of the XZ cross-section will be described as an example in FIG. 8. The rectifying plate 19c has an inclination with respect to the horizontal direction (X direction) and extends in the vertical direction (Z direction). The cross-section cut in the vertical direction (Z direction) with respect to the main surface 192c (YZ plane) of the rectifying plate 19c is longer in the vertical direction (Z direction) than in the horizontal direction (X direction). The thickness d1c of the rectifying plate 19c (the distance in the horizontal direction (X direction) of the cross-section cut in the vertical direction (Z direction) with respect to the main surface 192c) is preferably, for example, 5 mm or less. By the thickness d1c of the rectifying plate 19c being 5 mm or less, it is possible to suppress the accumulation of bubbles under the rectifying plate 19c. The vertical length d2c of the rectifying plate 19c is preferably, for example, 3 cm or more. By the vertical length d2c of the rectifying plate 19c being 3 cm or more, it is possible to receive the flow formed by the bubbles supplied by the bubble discharge tube 18 and the phosphoric acid solution 30 supplied by the chemical liquid discharge tube 121, and realize a uniform gas-liquid two-phase flow in the phosphoric acid solution 30 stored in the inner tank 111. The rectifying plate 19c further extends in the horizontal direction (Y direction). The rectifying plate 19c may, for example, span from one side of the inner tank 111 to the opposite side. The horizontal length of the rectifying plate 19c in the Y direction is not particularly limited as long as it can be arranged in the inner tank 111.

[0045] The lattice-shaped rectifying plate 19c is composed of a plurality of plate-like members. The plurality of plate-like members may be arranged substantially parallel to each other so as to span from one side of the inner tank 111 to the opposite side, for example. The inclination of the plurality of plate-like members with respect to the horizontal direction is preferably aligned in the same direction. Further, a plurality of other plate-like members arranged substantially parallel to each other may be arranged so as to intersect the plurality of plate-like members arranged substantially parallel to each other. That is, the plurality of plate-like members may be arranged in a lattice shape in the horizontal plane direction (XY direction). The number of the plurality of plate-like members arranged substantially parallel to each other is preferably, for example, 5 or more for each. The plate-like members arranged substantially parallel to each other are preferably arranged at equal intervals. The distance between the plurality of plate-like members arranged substantially parallel to each other is preferably, for example, in the range of 10 mm or more and 60 mm or less for each. With the rectifying plate 19c configured in this way, bubbles supplied by the bubble discharge pipe 18 and the phosphoric acid solution 30 supplied by the chemical liquid discharge pipe 121 can pass between the plurality of rectifying plates 19c from the bottom of the inner tank 111, forming a flow of bubbles and the phosphoric acid solution 30, and the bubbles can be released from the phosphoric acid solution 30 through the rectifying plate 19 (see the arrow in FIG. 8). The bubbles supplied by the bubble discharge pipe 18 can be released from the phosphoric acid solution 30 through the rectifying plate 19c, preventing the bubbling substrate 20 from being exposed from the phosphoric acid solution 30 on the surface of the phosphoric acid solution 30.

[0046] The substrate processing apparatus according to this modification can improve the stirring efficiency of the phosphoric acid solution 30 by realizing a uniform gas-liquid two-phase flow in the phosphoric acid solution 30 stored in the inner tank 111 by the flow of bubbles and the phosphoric acid solution 30.

[0047] <Modification 3> The configuration of the substrate processing apparatus according to this modification is the same as that of the substrate processing apparatus according to the first embodiment, except that the rectifying plate is provided with a lifting mechanism. The description that is the same as that of the first embodiment is omitted, and here, the parts different from the configuration of the substrate processing apparatus according to the first embodiment will be described.

[0048] FIG. 9A is a perspective view schematically showing the structure of the current rectifying plate according to the modification. FIG. 9B is an XZ cross-sectional view in the direction in which the substrates according to the modification are arranged, schematically showing the structure of the current rectifying plate. In this modification, the current rectifying plate 19 is provided with a lifting mechanism 191. By the lifting operation of the lifting mechanism 191, the current rectifying plate 19 can be automatically immersed in the phosphoric acid solution 30 stored in the inner tank 111, and when loading and unloading the substrate 20 before and after the etching process, the current rectifying plate 19 can be automatically taken out from the inner tank 111.

[0049] <Modification 4> The configuration of the substrate processing apparatus according to this modification is the same as that of the substrate processing apparatus according to the first embodiment, except that the current rectifying plate is integrated with the lid portion. The description that is the same as that of the first embodiment is omitted, and here, the parts different from the configuration of the substrate processing apparatus according to the first embodiment will be described.

[0050] FIG. 10A is a perspective view schematically showing the structure of the current rectifying plate according to the modification. FIG. 10B is a perspective view schematically showing the structure of the current rectifying plate according to the modification. FIG. 10C is an XZ cross-sectional view in the direction in which the substrates according to the modification are arranged, schematically showing the structure of the current rectifying plate. In this modification, the current rectifying plate 19 is integrated with the lid portion 193. The lid portion 193 may be a double-opening type in which the left and right ends are fixed as shown in FIG. 10A and rotate left and right (in the arrow direction) from the center to open and close, or a single-opening type in which one end is fixed as shown in FIG. 10B and rotates from the opposite end to one end to open and close. By closing the lid portion 193, the current rectifying plate 19 can be immersed in the phosphoric acid solution 30 stored in the inner tank 111, and by opening the lid portion 193, when loading and unloading the substrate 20 before and after the etching process, the current rectifying plate 19 can be taken out from the inner tank 111. However, it is not limited to this, and the lid portion 193 may be removable. In this case, by attaching the lid portion 193, the current rectifying plate 19 can be immersed in the phosphoric acid solution 30 stored in the inner tank 111, and by removing the lid portion 193, when loading and unloading the substrate 20 before and after the etching process, the current rectifying plate 19 can be taken out from the inner tank 111.

[0051] <Modification 5> The configuration of the substrate processing apparatus according to this modification example is the same as that of the substrate processing apparatus according to the first embodiment, except that the rectifying plate is foldable. The description that is the same as the first embodiment is omitted, and here, the parts that are different from the configuration of the substrate processing apparatus according to the first embodiment will be described.

[0052] FIG. 11A is a perspective view schematically showing the structure of the rectifying plate during the etching process according to the modification example. FIG. 11B is an XZ cross-sectional view in the direction in which the substrates are arranged, schematically showing the structure of the rectifying plate during the etching process according to the modification example. FIG. 12A is a perspective view schematically showing the structure of the rectifying plate before and after the etching process (when folded) according to the modification example. FIG. 12B is an XZ cross-sectional view in the direction in which the substrates are arranged, schematically showing the structure of the rectifying plate before and after the etching process (when folded) according to the modification example. In this modification example, the rectifying plate 19 can be folded. The rectifying plate 19 shown in FIGS. 11A and 11B can be folded by moving the rectifying plate 19 close to one side of the inner tank 111 when loading and unloading the substrate 20 before and after the etching process shown in FIGS. 12A and 12B.

[0053] <Modification Example 6> The configuration of the substrate processing apparatus according to this modification example is the same as that of the substrate processing apparatus according to the first embodiment, except for the configuration of the chemical liquid discharge pipe. The description that is the same as the first embodiment is omitted, and here, the parts that are different from the configuration of the substrate processing apparatus according to the first embodiment will be described.

[0054] FIG. 13 is a YZ cross-sectional view in a direction perpendicular to the direction in which the bubble discharge pipe extends, schematically showing the structure of the chemical liquid discharge pipe according to the modification example. In this modification example, the number of chemical liquid discharge pipes 121 is increased. By increasing the number of chemical liquid discharge pipes 121, the flow rate of the phosphoric acid solution 30 supplied from each chemical liquid discharge pipe 121 can be suppressed. By suppressing the flow rate of the phosphoric acid solution 30 supplied from each chemical liquid discharge pipe 121, it is possible to suppress the concentration of a high flow rate portion of the phosphoric acid solution 30 at a specific location in the inner tank 111.

[0055] <Modification Example 7> The configuration of the substrate processing apparatus according to this modification example is the same as that of the substrate processing apparatus according to the first embodiment, except for the structure of the chemical liquid discharge pipe. The description that is the same as the first embodiment is omitted, and here, the parts that are different from the configuration of the substrate processing apparatus according to the first embodiment will be described.

[0056] FIG. 14 is a YZ cross-sectional view in a direction perpendicular to the direction in which the bubble discharge pipe extends, schematically showing the structure of the chemical liquid discharge pipe according to the modification example. In this modification example, the chemical liquid discharge port 123a of the chemical liquid discharge pipe 121a has a large diameter. The pore diameter of the chemical liquid discharge port 123a may be, for example, 2 mm or more in diameter. Also, the shape of the chemical liquid discharge port 123a does not have to be a perfect circle. The chemical liquid discharge port 123a may be, for example, groove-shaped. Since the chemical liquid discharge port 123a is large, it is possible to alleviate the concentration of the flow rate of the phosphoric acid solution 30 supplied from one chemical liquid discharge port 123a. By alleviating the concentration of the flow rate of the phosphoric acid solution 30 supplied from one chemical liquid discharge port 123a, it is possible to suppress the concentration of the high flow rate portion of the phosphoric acid solution 30 at a specific location in the inner tank 111.

[0057] <Modification Example 8> The configuration of the substrate processing apparatus according to this modification example is the same as that of the substrate processing apparatus according to the first embodiment, except for the structure of the chemical liquid discharge pipe. The description that is the same as the first embodiment is omitted, and here, the parts that are different from the configuration of the substrate processing apparatus according to the first embodiment will be described.

[0058] FIG. 15 is a YZ cross-sectional view in a direction perpendicular to the direction in which the bubble discharge pipe extends, schematically showing the structure of the chemical liquid discharge pipe according to the modification example. In this modification example, the number of chemical liquid discharge ports 123b of the chemical liquid discharge pipe 121b is large. In order to increase the number of chemical liquid discharge ports 123b, the chemical liquid discharge ports 123b may be provided, for example, on the entire outer circumference of the chemical liquid discharge pipe 121b. Since the number of chemical liquid discharge ports 123b is large, it is possible to disperse the supply of the phosphoric acid solution 30 and alleviate the concentration of the flow rate of the phosphoric acid solution 30 supplied from one chemical liquid discharge port 123b. By alleviating the concentration of the flow rate of the phosphoric acid solution 30 supplied from one chemical liquid discharge port 123b, it is possible to suppress the concentration of the high flow rate portion of the phosphoric acid solution 30 at a specific location in the inner tank 111.

[0059] <Modification Example 9> The configuration of the substrate processing apparatus according to this modification example is the same as that of the substrate processing apparatus according to the first embodiment, except that it further includes a partition wall. The description that is the same as that of the first embodiment is omitted, and here, the parts different from the configuration of the substrate processing apparatus according to the first embodiment will be described.

[0060] FIG. 16 is a YZ cross-sectional view in a direction perpendicular to the direction in which the bubble discharge tube extending schematically showing the structure of the partition wall according to the modification example extends. As shown in FIG. 16, a partition wall 125 is provided at the bottom of the inner tank 111. The partition wall 125 is disposed below the holding member 17 that holds the substrate 20. The partition wall 125 is disposed above the chemical liquid discharge tube 121 that supplies the phosphoric acid solution 30. The partition wall 125 may be disposed above the bubble discharge tube 18 that supplies bubbles, but is preferably disposed below the bubble discharge tube 18. The partition wall 125 has a number of holes 125a, and the holes 125a can pass the phosphoric acid solution 30 supplied from the chemical liquid discharge tube 121. By providing the partition wall 125, the supply of the phosphoric acid solution 30 can be dispersed, and the concentration of the flow rate of the phosphoric acid solution 30 supplied from the chemical liquid discharge tube 121 can be alleviated. By alleviating the concentration of the flow rate of the phosphoric acid solution 30, it is possible to suppress the concentration of the high flow rate portion of the phosphoric acid solution 30 at a specific location in the inner tank 111.

[0061] As described above, the present invention has been described with reference to the drawings, but the present invention is not limited to the above-described embodiments, and can be appropriately modified without departing from the spirit of the present invention. For example, based on the substrate processing apparatus of the present embodiment, those in which a person skilled in the art appropriately adds, deletes, or changes the design of components are also included in the scope of the present invention as long as they have the gist of the present invention. Furthermore, the above-described embodiments and modification examples can be appropriately combined as long as there is no contradiction, and technical matters common to each embodiment are included in each modification example even if not explicitly described.

[0062] Even if there are other operational effects different from those brought about by the aspects of each of the above-described embodiments, those that are obvious from the description of this specification or can be easily predicted by those skilled in the art are naturally understood to be brought about by the present invention.

Explanation of Signs

[0063] 1 Substrate processing apparatus, 11 Processing tank (container), 12 Circulation path, 13 Heating unit, 14 Input unit, 15 Pump, 17 Holding member, 18 Bubble discharge pipe, 18a Bubble discharge port, 121 Chemical liquid discharge pipe, 123 Chemical liquid discharge port, 19 Rectifying plate

Claims

1. A processing tank capable of storing a chemical and performing a process by immersing a plurality of substrates in the chemical; A holding member for arranging and holding the plurality of substrates in a first direction; A rectifying plate including a plurality of first plate portions arranged in the first direction on the holding member; A bubble discharge pipe disposed under the holding member and discharging gas into the chemical; comprising: Each of the plurality of first plate portions extends in a second direction intersecting the first direction and extends in a third direction intersecting the first direction and the second direction, and a length extending in the third direction is larger than a cross-sectional width in the first direction, a substrate processing apparatus.

2. The substrate processing apparatus according to claim 1, wherein the plurality of first plate portions are arranged at equal intervals so as to span from one side of the processing tank to the opposite side.

3. The second direction is orthogonal to the first direction, The third direction is orthogonal to the first direction and the second direction, the substrate processing apparatus according to claim 1.

4. The rectifying plate further includes a plurality of second plate portions arranged in the second direction on the holding member, Each of the plurality of second plate portions extends in the first direction and extends in the third direction, and a length extending in the third direction is larger than a cross-sectional width in the second direction, When viewed from the third direction, the plurality of first plate portions and the plurality of second plate portions intersect, the substrate processing apparatus according to claim 3.

5. The third direction is orthogonal to the first direction and the second direction, A fourth direction intersects the first direction and is orthogonal to the third direction, the substrate processing apparatus according to claim 1.

6. The rectifying plate further includes a plurality of second plate portions arranged in the fourth direction on the holding member, Each of the plurality of second plate portions extends in the fourth direction and also extends in the third direction, and the length extending in the third direction is greater than the cross-sectional width in the first direction. The substrate processing apparatus according to claim 5, wherein when viewed from the third direction, the plurality of first plate portions and the plurality of second plate portions intersect.

7. The substrate processing apparatus according to claim 1, further comprising a chemical liquid discharge pipe that is disposed below the holding member and supplies the chemical agent.

8. The substrate processing apparatus according to claim 1, wherein the rectifying plate is arranged in a grid pattern in the horizontal plane direction.

9. The substrate processing apparatus according to claim 8, wherein the grid-like interval is 10 mm or more and 60 mm or less.

10. The substrate processing apparatus according to claim 1, wherein at least six bubble discharge pipes are arranged.

11. The substrate processing apparatus according to claim 1, wherein the bubble discharge pipe discharges a gas of 15 L / min or more in total into the chemical agent.

12. The substrate processing apparatus according to claim 7, wherein the chemical liquid discharge pipe has 60 or more chemical liquid discharge ports per substrate.

13. The substrate processing apparatus according to claim 12, wherein the chemical liquid discharge port has a pore diameter of 2 mm or more.

14. The substrate processing apparatus according to claim 1, further comprising a lifting mechanism that immerses the rectifying plate in the chemical agent.

15. The substrate processing apparatus according to claim 1, wherein the rectifying plate is foldable.

16. When the plurality of substrates are immersed in the chemical agent, the first plate portion is arranged so as not to overlap the plurality of substrates when viewed from the first direction. The substrate processing apparatus according to claim 1.

17. A substrate processing apparatus comprising: a processing tank capable of storing a chemical; a holding member for holding a plurality of substrates arranged side by side in a first direction; a rectifying plate including a plurality of first plate portions arranged side by side in the first direction on the holding member; and a bubble discharge tube disposed below the holding member, wherein each of the plurality of first plate portions extends in a second direction intersecting the first direction and also extends in a third direction intersecting the first direction and the second direction, and a length of the extension in the third direction is larger than a cross-sectional width in the first direction. Prepare the substrate processing apparatus, Immerse the substrate in the chemical, A substrate processing method of discharging bubbles from the bubble discharge tube.

18. A substrate processing apparatus comprising: a processing tank capable of storing a chemical; a holding member for holding a plurality of semiconductor substrates arranged side by side in a first direction; a rectifying plate including a plurality of first plate portions arranged side by side in the first direction on the holding member; and a bubble discharge tube disposed below the holding member, wherein each of the plurality of first plate portions extends in a second direction intersecting the first direction and also extends in a third direction intersecting the first direction and the second direction, and a length of the extension in the third direction is larger than a cross-sectional width in the first direction. Prepare the substrate processing apparatus, Immerse the semiconductor substrate in the chemical, A method of manufacturing a semiconductor device of discharging bubbles from the bubble discharge tube.

19. The semiconductor substrate has a laminate in which a silicon nitride film and a silicon oxide film are alternately formed, The chemical is a phosphoric acid solution, The method of manufacturing a semiconductor device according to claim 18, wherein the bubbles contain nitrogen.

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