Retention device and method for manufacturing a retention device

Abstract

To provide a retainer capable of suppressing a leakage of an inactive gas through an insulation film, and provide a manufacturing method of the same.SOLUTION: A retainer comprises: a plate-like member 10 having a circular ring channel 17 and an introduction channel 18 that are communicated with a plurality of gas holes 16; a metal base member 20 having a penetration hole 26 which is communicated with the introduction channel 18; and a bonding layer 30 which bonds the plate-like member 10 and the metal base member 20, and in which an intermediate penetration hole 36 that communicates the introduction channel 18 and the penetration hole 26 is formed. In an electrostatic chuck 1 holding a semiconductor wafer W on a holding surface 11 of the plate-like member 10, an insulation film 24 having an air hole is provided on an upper surface 21 of the metal base member 20. The bonding layer 30 comprises: a first bonding layer 31 positioned on the base member 20 side; and a second bonding layer 32 positioned on the plate-like member 10 side. The first bonding layer 31 covers the insulation film 24, and at least one part thereof is filled in the air hole of the insulation film 24.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a holding device for holding an object and a method for manufacturing the holding device.

Background Art

[0002] As a conventional technique related to a holding device, for example, Patent Document 1 discloses an electrostatic chuck (holding device) including a dielectric substrate (plate-like member) that holds an object on a holding surface, a metal plate (base member), and an insulating adhesive (bonding layer) that bonds the dielectric substrate and the metal plate. In this electrostatic chuck, an insulator film (insulating film) is formed on the surface (holding surface) of the metal plate by spraying in order to improve insulation reliability.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, when a gas flow path is provided in the holding device and an inert gas (e.g., helium, etc.) is supplied to the holding surface of the dielectric substrate through the gas flow path, since a large number of bubbles exist in the insulator film, the inert gas also flows through the insulator film. That is, the inert gas leaks from the gas flow path through the insulator film. Then, the accuracy of the flow rate control of the inert gas decreases, and it becomes impossible to supply the required flow rate of gas to the holding surface of the dielectric substrate, and there is a possibility that the temperature control on the holding surface cannot be performed accurately. In addition, due to the leakage of the inert gas, there is also a possibility of contamination inside the manufacturing apparatus (e.g., semiconductor manufacturing apparatus, etc.) in which the holding device is incorporated. Further, if there are even more bubbles in the insulator film, there is a possibility that the apparatus cannot be evacuated due to the flow of air.

[0005] Therefore, the present disclosure has been made to solve the above-described problems, and an object thereof is to provide a holding device capable of suppressing leakage of an inert gas or air through an insulating film and a method for manufacturing the same.

Means for Solving the Problems

[0006] One aspect of the present disclosure made to solve the above problems is a plate-like member including a first surface formed with a plurality of gas discharge holes, a second surface provided on the opposite side of the first surface, and a first gas flow path communicating with the gas discharge holes; a metal base member including a third surface and a fourth surface provided on the opposite side of the third surface, and a second gas flow path communicating with the first gas flow path; a joining layer disposed between the second surface of the plate-like member and the third surface of the base member, joining the plate-like member and the base member, and having a through hole formed therein for communicating the first gas flow path and the second gas flow path; in a holding device for holding an object on the first surface of the plate-like member, an insulating film having pores is provided on the third surface of the base member; the joining layer includes a first joining layer located on the base member side and a second joining layer located on the plate-like member side; the first joining layer is characterized in that it covers the insulating film and at least a part of it is filled in the pores.

[0007] In this holding device, the insulating film is covered by the first joining layer in a state where a part of the first joining layer provided in the joining layer is filled in the pores of the insulating film. Therefore, leakage of gas or air through the insulating film can be suppressed. Accordingly, since the accuracy of flow rate control of the inert gas is improved, temperature control on the first surface can be performed with high accuracy. Also, contamination into a manufacturing apparatus (for example, a semiconductor manufacturing apparatus etc.) in which the holding device is incorporated can be prevented.

[0008] In the above-described holding device, Preferably, the first bonding layer and the second bonding layer are formed of thermosetting resins having different material compositions.

[0009] Here, although both the first bonding layer and the second bonding layer are made of the same kind of material, i.e., thermosetting resin, for example, additives are not added to the first bonding layer, while additives are added to the second bonding layer, so that the material compositions of the first bonding layer and the second bonding layer can be changed. Also, the molecular weight of the resin can be changed in the first bonding layer to lower the viscosity before curing, thereby changing the material composition between the first bonding layer and the second bonding layer.

[0010] By doing so, in the first bonding layer, the filling into the bubbles of the insulating film can be promoted, while in the second bonding layer, the heat conduction can be improved. As a result, the suppression effect of gas leakage through the insulating film and the temperature controllability on the first surface can be improved.

[0011] In the holding device described above, Preferably, the second bonding layer contains powder of the material forming the plate-like member.

[0012] Since there is an insulating film in addition to the resin in the first bonding layer, while the second bonding layer consists only of resin, the heat conduction of the second bonding layer becomes worse than that of the first bonding layer. Therefore, by mixing powder (filler) of the material forming the plate-like member into the second bonding layer, the heat conduction of the second bonding layer can be improved. Thereby, the heat conduction in the entire bonding layer is improved, and the heat transfer between the base member and the plate-like member is promoted, so that the accuracy of temperature control on the first surface can be improved.

[0013] In the holding device described above, Preferably, the first bonding layer is disposed at least over the entire circumference around the through hole.

[0014] As a result, the first bonding layer is surely disposed around the through hole provided in the bonding layer (more precisely, around the opening on the third surface of the second gas flow path), so that the periphery of the through hole can be surrounded by the first bonding layer. Therefore, gas leakage through the insulating film can be eliminated. As a result, the flow rate of the gas can be accurately controlled, so that the temperature control on the first surface can be performed more accurately. In addition, contamination of a manufacturing apparatus (such as a semiconductor manufacturing apparatus) in which the holding device is incorporated can be surely prevented.

[0015] In the holding device described above, it is preferable that the first bonding layer enters the insulating film.

[0016] As a result, the first bonding layer is surely filled in the bubbles of the insulating film, so that gas or air leakage through the insulating film can be surely eliminated.

[0017] And in the method for manufacturing the above-described holding device, an impregnation step of applying the first bonding layer before curing on the insulating film of the base member and then performing vacuum pumping to impregnate the first bonding layer before curing into the insulating film; a polishing step of curing the first bonding layer applied and impregnated on the insulating film and then polishing the surface of the first bonding layer until the insulating film appears; a bonding step of disposing the second bonding layer before curing on the first bonding layer after polishing, then laminating the plate-like member on the second bonding layer, and curing the second bonding layer to bond the plate-like member and the base member, characterized by including these steps.

[0018] As the method for manufacturing the above-described holding device, by providing such an impregnation step, the first bonding layer can be surely filled in the pores of the insulating film. Therefore, since the pores are surely blocked by the first bonding layer, gas or air leakage through the insulating film can be surely eliminated. As a result, the flow rate of the inert gas can be accurately controlled.

[0019] Further, by performing a polishing process before the bonding process, the outermost surface of the insulating film can be brought into contact with the second bonding layer, so that the bonding strength between the base member and the plate-like member by the second bonding layer can be improved. As a result, damage to the bonding layer caused by the difference in thermal expansion between the base member and the plate-like member can be prevented, and heat transfer between the base member and the plate-like member through the bonding layer can be performed smoothly.

[0020] By manufacturing the above-described holding device by such a manufacturing method, the flow rate of the inert gas can be accurately controlled, and a holding device in which heat transfer between the base member and the plate-like member through the bonding layer can be performed smoothly can be obtained. And in the holding device manufactured in this way, temperature control on the first surface can be accurately performed.

Advantages of the Invention

[0021] According to the present disclosure, it is possible to provide a holding device capable of suppressing leakage of an inert gas or air through an insulating film and a manufacturing method thereof.

Brief Description of the Drawings

[0022]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Embodiments for Carrying Out the Invention

[0023] A holding device and a manufacturing method thereof according to an embodiment of the present disclosure will be described in detail with reference to the drawings. In this embodiment, for example, an electrostatic chuck used in a semiconductor manufacturing apparatus such as a film forming apparatus (CVD film forming apparatus, sputtering film forming apparatus, etc.) or an etching apparatus (plasma etching apparatus, etc.) will be exemplified.

[0024] The electrostatic chuck 1 of this embodiment will be described with reference to FIGS. 1 to 3. The electrostatic chuck 1 of this embodiment is a device that adsorbs and holds a semiconductor wafer W (object) by electrostatic attraction, and is used, for example, to fix the semiconductor wafer W in a vacuum chamber of a semiconductor manufacturing apparatus. As shown in FIG. 1, the electrostatic chuck 1 includes a plate-like member 10, a base member 20, and a bonding layer 30 that bonds the plate-like member 10 and the base member 20.

[0025] In the following description, for convenience of explanation, the XYZ axes are defined as shown in FIG. 1. Here, the Z axis is the axis in the axial direction (vertical direction in FIG. 1) of the electrostatic chuck 1, and the X axis and the Y axis are the axes in the radial direction of the electrostatic chuck 1.

[0026] As shown in FIG. 1, the plate-like member 10 is a disk-shaped member and is formed of ceramics. Various ceramics can be used as the ceramics, but from the viewpoints of strength, wear resistance, plasma resistance, etc., for example, ceramics mainly composed of aluminum oxide (alumina, Al2O3) or aluminum nitride (AlN) are preferably used. Here, the main component means the component with the highest content ratio (for example, the component with a volume content ratio of 90 vol% or more).

[0027] Also, the diameter of the plate-like member 10 is, for example, about 150 mm to 350 mm. The thickness of the plate-like member 10 is, for example, about 2 mm to 6 mm. The thermal conductivity of the plate-like member 10 is desirably in the range of 10 W / mK to 50 W / mK (more preferably, 18 W / mK to 30 W / mK).

[0028] As shown in FIGS. 1 and 2, the plate-like member 10 includes a holding surface 11 for holding the semiconductor wafer W and a lower surface 12 provided on the side opposite to the holding surface 11 in the thickness direction (the direction coinciding with the Z-axis direction, the vertical direction) of the plate-like member 10. Note that the holding surface 11 is an example of the "first surface" of the present disclosure, and the lower surface 12 is an example of the "second surface" of the present disclosure.

[0029] The holding surface 11 of the plate-like member 10 has an uneven shape. Specifically, as shown in FIGS. 2 and 3, an annular convex portion 13 is formed near the outer edge of the holding surface 11, and a plurality of independent columnar convex portions 14 are formed inside the annular convex portion 13. In this way, an annular convex portion 13 is formed on the holding surface 11 so as to surround all of the plurality of convex portions 14. Note that the annular convex portion 13 is also called a seal band. The shape of the cross section (XZ cross section) of the annular convex portion 13 is substantially rectangular as shown in FIG. 2. The height (dimension in the Z-axis direction) of the annular convex portion 13 is, for example, about 10 μm to 20 μm. Also, the width (dimension in the X-axis direction) of the annular convex portion 13 is, for example, about 0.5 mm to 5.0 mm.

[0030] Each convex portion 14 has a substantially circular shape when viewed in the Z-axis direction (plan view) as shown in FIG. 3 and is arranged at substantially equal intervals. Also, the shape of the cross section (XZ cross section) of each convex portion 14 is substantially rectangular as shown in FIG. 2. The height of the convex portion 14 is substantially the same as the height of the annular convex portion 13 and is, for example, about 10 μm to 20 μm. Also, the width (the maximum diameter of the convex portion 14 when viewed in the Z-axis direction) of the convex portion 14 is, for example, about 0.5 mm to 1.5 mm. Note that a portion where no convex portion 14 is formed inside the annular convex portion 13 on the holding surface 11 of the plate-like member 10 is a concave portion 15.

[0031] The semiconductor wafer W is supported by the annular convex portion 13 and the plurality of convex portions 14 on the holding surface 11 of the plate-like member 10 and is held by the electrostatic chuck 1. In a state where the semiconductor wafer W is held by the electrostatic chuck 1, a space S exists between the surface (lower surface) of the semiconductor wafer W and the holding surface 11 of the plate-like member 10 (specifically, the concave portion 15 of the holding surface 11) (see FIG. 2). An inert gas (for example, helium gas) is supplied into this space S from the gas holes 16 that open to the holding surface 11 through the gas flow path 40 formed in the electrostatic chuck 1. In the present embodiment, six gas holes 16 are provided at equal intervals in a circumferential shape. Note that the gas holes 16 are an example of the "gas discharge holes" of the present disclosure.

[0032] Further, inside the plate-like member 10, as shown in FIGS. 2 and 3, an annular flow path 17 and an introduction flow path 18 that form a part of the gas flow path 40 are provided. The annular flow path 17 is a flow path that connects the gas holes 16 to each other. The introduction flow path 18 is provided so as to extend in the Z-axis direction, and one end opens to the lower surface 12 and the other end communicates with the annular flow path 17. Thereby, the inert gas supplied from the introduction flow path 18 to the annular flow path 17 is discharged into the space S through each gas hole 16.

[0033] As shown in FIGS. 1 and 2, the base member 20 includes an upper surface 21 and a lower surface 22 provided on the side opposite to the upper surface 21 in the thickness direction (Z-axis direction) of the base member 20, and is formed in a columnar shape. Note that the upper surface 21 is an example of the "third surface" of the present disclosure, and the lower surface 22 is an example of the "fourth surface" of the present disclosure. This base member 20 is formed of a metal (for example, aluminum, an aluminum alloy, titanium, etc.). Therefore, in order to improve the insulation reliability of the electrostatic chuck 1, an insulating film (spray coating) 24 made of ceramics (for example, alumina, yttria, etc.) formed by spraying is provided on the upper surface 21. A large number of minute pores (spray pores) are formed in this insulating film 24.

[0034] The diameter of this base member 20 is, for example, about 220 mm to 550 mm (usually about 220 mm to 350 mm), and the thickness (dimension in the Z-axis direction) of the base member 20 is, for example, about 20 mm to 40 mm.

[0035] And, as shown in FIG. 2, a refrigerant flow path 23 for flowing a refrigerant (for example, a fluorine-based inert liquid, water, etc.) is formed in the base member 20. By flowing the refrigerant in this refrigerant flow path 23, the base member 20 is cooled, and thereby, the plate-like member 10 is cooled via the bonding layer 30.

[0036] Further, a cylindrical through hole 26 that penetrates in the thickness direction (Z-axis direction, the vertical direction in FIG. 2) between the upper surface 21 and the lower surface 22 is formed in the base member 20. In the present embodiment, two through holes 26 are provided. Note that the through hole 26 is an example of the "second gas flow path" of the present disclosure. This through hole 26 is disposed at a position overlapping (the central axes of the flow paths coincide) with the introduction flow path 18 of the plate-like member 10 when viewed in the Z-axis direction. And the through hole 26 communicates with the introduction flow path 18 of the plate-like member 10 and constitutes a part of the gas flow path 40.

[0037] The bonding layer 30 is disposed between the lower surface 12 of the plate-like member 10 and the upper surface 21 of the base member 20, and bonds the plate-like member 10 and the base member 20. Through this bonding layer 30, the lower surface 12 of the plate-like member 10 and the upper surface 21 of the base member 20 are thermally connected.

[0038] This bonding layer 30 includes a first bonding layer 31 located on the base member 20 side and a second bonding layer 32 located on the plate-like member 10 side. The first bonding layer 31 enters into the insulating film 24 of the base member 20. That is, the first bonding layer 31 is filled in the pores of the insulating film 24 and covers the insulating film 24. On the other hand, the second bonding layer 32 is disposed between the lower surface 12 of the plate-like member 10 and the upper surface 21 of the base member 20, and bonds the plate-like member 10 and the base member 20.

[0039] The first bonding layer 31 and the second bonding layer 32 are made of a thermosetting adhesive such as a silicone-based resin, an acrylic-based resin, or an epoxy-based resin, but their respective material compositions are different. That is, the first bonding layer 31 and the second bonding layer 32 are formed of thermosetting resins with different material compositions. Specifically, no additives are contained in the first bonding layer 31, while powder of a material (e.g., alumina, etc.) for forming the plate-like member 10 is added to the second bonding layer 32.

[0040] The thickness (dimension in the Z-axis direction) of such a bonding layer 30 is, for example, about 0.1 to 5.0 mm. Note that the first bonding layer 31 and the second bonding layer 32 have substantially the same thickness. Also, the thermal conductivity of the bonding layer 30 is, for example, 1.0 W / mK. Note that the thermal conductivity of the bonding layer 30 (assuming a silicone-based resin) is desirably within the range of 0.1 to 2.0 W / mK (preferably 0.5 to 1.5 W / mK).

[0041] As shown in FIG. 2, an intermediate through-hole 36 that connects the introduction flow path 18 and the through-hole 26 is formed in this bonding layer 30. That is, a cylindrical intermediate through-hole 36 is formed between the introduction flow path 18 and the through-hole 26. The intermediate through-hole 36 is arranged coaxially with the introduction flow path 18 and the through-hole 26. That is, the introduction flow path 18, the intermediate through-hole 36, and the through-hole 26 are arranged linearly in series in the Z-axis direction. Thereby, as shown in FIG. 2, a gas flow path 40 is formed in the electrostatic chuck 1 by the gas hole 16, the annular flow path 17, and the introduction flow path 18 in the plate-like member 10, the intermediate through-hole 36, and the through-hole 26 of the base member 20.

[0042] Subsequently, a method for manufacturing the electrostatic chuck 1 having the above configuration will be described with reference to FIGS. 4 to 8. Note that FIGS. 4 to 8 are schematic diagrams for easily explaining the manufacturing process, and the configurations of the base member 20 and the plate-like member 10 are partially omitted.

[0043] First, as shown in FIG. 4, a first bonding layer 31 is applied onto the insulating film 24 of a base member 20 in which an insulating film 24, a through-hole 26, etc. are formed (coating step). In this state, the first bonding layer 31 has not yet been cured. In the present embodiment, the first bonding layer 31 is applied to substantially the entire area of the insulating film 24 (the entire bonding surface with the plate-like member 10), but it is not necessary to apply the first bonding layer 31 to the entire area of the insulating film 24. It is sufficient that the first bonding layer 31 is applied at least over the entire circumference around the through-hole 26 so as to surround the periphery of the through-hole 26.

[0044] Next, as shown in FIG. 5, the base member 20 coated with the uncured first bonding layer 31 is placed in a decompression device 50, and vacuum pumping is performed to impregnate the uncured first bonding layer 31 into the insulating film 24 (impregnation step). At this time, when the uncured first bonding layer 31 is impregnated into the insulating film 24, the first bonding layer 31 foams on the insulating film 24. Therefore, by confirming that the foaming of the first bonding layer 31 has stopped and then ending the vacuum pumping, the uncured first bonding layer 31 can be reliably filled into the pores of the insulating film 24. Thereafter, the first bonding layer 31 is cured. In the state where the first bonding layer 31 is cured, as shown in FIG. 6, the insulating film 24 is completely covered with the first bonding layer 31.

[0045] Subsequently, the upper surface 21 of the base member 20 provided with the first bonding layer 31 is polished. Specifically, as shown in FIG. 7, the surface of the first bonding layer 31 is polished until the insulating film 24 appears (polishing step). Thereby, the outermost surface of the insulating film 24 is exposed.

[0046] Then, as shown in FIG. 8, a second bonding layer 32 before curing is disposed between the upper surface 21 of the base member 20 (exactly the surface where the first bonding layer 31 and the outermost surface of the insulating film 24 are mixed) and the lower surface 12 of the plate-like member 10, and the second bonding layer 32 is cured by heating to bond the plate-like member 10 and the base member 20 (bonding step). At this time, since the outermost surface of the insulating film 24 is exposed on the upper surface 21 of the base member 20 by the polishing process, the outermost surface of the insulating film 24 and the second bonding layer 32 can be brought into contact with each other. Therefore, the bonding strength between the base member 20 and the plate-like member 10 by the second bonding layer 32 can be improved. Accordingly, in the electrostatic chuck 1, damage to the bonding layer 30 caused by the difference in thermal expansion between the base member 20 and the plate-like member 10 can be prevented, so that heat transfer between the base member 20 and the plate-like member 10 via the bonding layer 30 can be smoothly performed.

[0047] The electrostatic chuck 1 of the present embodiment manufactured in this way is incorporated into a semiconductor manufacturing apparatus and used. When the electrostatic chuck 1 is used, the inert gas supplied from the lower surface 22 side of the base member 20 is filled into the space S formed on the holding surface 11 through the gas flow path 40 provided in the electrostatic chuck 1.

[0048] Here, when the insulating film 24 is formed on the upper surface 21 of the base member 20 as in the present embodiment, since a large number of pores (spray pores) exist in the insulating film 24, the inert gas also flows into the insulating film 24, and there is a possibility that the inert gas leaks to the outside through the insulating film 24 from the gas flow path 40. When such gas leakage occurs, the accuracy of the flow rate control of the inert gas supplied to the space S of the holding surface 11 decreases, and the required flow rate of the inert gas cannot be supplied to the space S. As a result, the temperature control on the holding surface 11 cannot be accurately performed. In addition, the occurrence of gas leakage may also cause contamination in the semiconductor manufacturing apparatus in which the electrostatic chuck 1 is incorporated.

[0049] Therefore, in the electrostatic chuck 1 of the present embodiment, the bonding layer 30 is composed of a first bonding layer 31 and a second bonding layer 32. The first bonding layer 31 is filled into the pores of the insulating film 24 so that the first bonding layer 31 enters the insulating film 24, and the insulating film 24 of the base member 20 is covered with the first bonding layer 31. Therefore, since a part of the first bonding layer 31 provided in the bonding layer 30 fills the pores of the insulating film 24 and the insulating film 24 is covered by the first bonding layer 31, gas leakage through the insulating film 24 can be suppressed.

[0050] And during the manufacture of the electrostatic chuck 1, after applying the uncured first bonding layer 31 on the insulating film 24 of the base member 20, a vacuuming process is performed to impregnate the uncured first bonding layer 31 into the insulating film 24. Therefore, the uncured first bonding layer 31 can be surely filled into the pores of the insulating film 24.

[0051] In this way, in the electrostatic chuck 1 of the present embodiment, the first bonding layer 31 filled in the pores of the insulating film 24 is arranged over the entire circumference around the through hole 26 so as to surround the periphery of the through hole 26. That is, in the insulating film 24, since the pores existing around the through hole 26 are filled with the first bonding layer 31, the pores of the insulating film 24 that communicate the through hole 26 with the outside disappear. Therefore, it is possible to surely eliminate the leakage of the inert gas flowing through the gas flow path 40 to the outside through the insulating film 24.

[0052] Therefore, in the electrostatic chuck 1, since the flow rate of the inert gas can be accurately controlled, the temperature control on the holding surface 11 can be accurately performed. In addition, contamination of the semiconductor manufacturing apparatus in which the electrostatic chuck 1 is incorporated can be surely prevented.

[0053] Also, in the electrostatic chuck 1 of the present embodiment, the bonding layer 30 is composed of a first bonding layer 31 and a second bonding layer 32 formed of thermosetting resins having different material compositions. Specifically, powder (filler) of a material (for example, alumina) for forming the plate-like member 10 is added to the second bonding layer 32 to change the material composition. As a result, in the first bonding layer 31 without the additive, filling into the pores of the insulating film 24 can be promoted, while in the second bonding layer 32, heat conduction can be improved. Therefore, both the effect of suppressing gas leakage through the insulating film 24 and the temperature controllability on the holding surface 11 can be improved. Further, since a filler is mixed into the second bonding layer 32 having poor heat conduction as compared with the first bonding layer 31 in which the insulating film 24 exists in addition to the resin, to improve the heat conduction of the second bonding layer 32, the heat conduction of the entire bonding layer 30 is improved. Therefore, heat transfer between the base member 20 and the plate-like member 10 can be promoted, so that the accuracy of temperature control on the holding surface 11 can be further improved.

[0054] As described above, according to the electrostatic chuck 1 of the present embodiment, the bonding layer 30 is constituted by the first bonding layer 31 and the second bonding layer 32 formed of thermosetting resins having different material compositions, and the first bonding layer 31 fills the pores in the insulating film 24 to cover the insulating film 24 with the first bonding layer 31. As a result, since the pores in the insulating film 24 that communicate the through holes 26 constituting a part of the gas flow path 40 with the outside disappear, gas leakage through the insulating film 24 can be eliminated. Therefore, the accuracy of flow rate control of the inert gas supplied to the space S is improved, temperature control on the holding surface 11 can be performed with high accuracy, and contamination into the semiconductor manufacturing apparatus in which the electrostatic chuck 1 is incorporated can be prevented.

[0055] Note that the above embodiments are merely illustrative and do not limit the present disclosure in any way. It goes without saying that various improvements and modifications can be made without departing from the gist thereof. For example, in the above embodiment, by adding a filler to the second bonding layer 32, the material compositions of the first bonding layer 31 and the second bonding layer 32 are changed. However, for example, by changing the molecular weight of the resin in the first bonding layer 31 to lower the viscosity before curing, the material compositions of the first bonding layer 31 and the second bonding layer 32 can also be changed. By lowering the viscosity of the first bonding layer 31 in this way, the first bonding layer 31 can be efficiently filled into the pores of the insulating film 24, and the productivity of the electrostatic chuck 1 can be increased.

Explanation of Reference Numerals

[0056] 1 Electrostatic chuck 10 Plate-like member 11 Holding surface 12 Lower surface 16 Gas hole 17 Annular flow path 18 Introduction flow path 20 Base member 21 Upper surface 22 Lower surface 24 Insulating film 26 Through hole 30 Bonding layer 31 First bonding layer 32 Second bonding layer 36 Intermediate through hole W Semiconductor wafer

Claims

1. A plate-like member including a first surface formed with a plurality of gas discharge holes, a second surface provided on the side opposite to the first surface, and a first gas flow path communicating with the gas discharge holes, A base member made of metal including a third surface, a fourth surface provided on the side opposite to the third surface, and a second gas flow path communicating with the first gas flow path, A joining layer disposed between the second surface of the plate-like member and the third surface of the base member, joining the plate-like member and the base member, and having a through hole formed therein for communicating the first gas flow path and the second gas flow path, In a holding device for holding an object on the first surface of the plate-like member, An insulating film having pores is provided on the third surface of the base member, The joining layer includes a first joining layer located on the base member side and a second joining layer located on the plate-like member side, The first joining layer covers the insulating film, and at least a part of the first joining layer is filled in the pores, The first joining layer and the second joining layer are formed of thermosetting resins having different material compositions A holding device characterized by the above.

2. In the holding device according to Claim 1, The second joining layer contains powder of the material forming the plate-like member A holding device characterized by the above.

3. In the holding device according to Claim 1 or Claim 2, The first joining layer is disposed at least over the entire circumference around the through hole A holding device characterized by the above.

4. In any one of the holding devices according to Claims 1 to 3, The first joining layer has penetrated into the insulating film A holding device characterized by the above.

5. In a method for manufacturing any one of the holding devices according to Claims 1 to 4, An impregnation step of applying the uncured first joining layer on the insulating film of the base member and then performing vacuum pumping to impregnate the uncured first joining layer into the insulating film, A polishing step of curing the first joining layer applied and impregnated on the insulating film and then polishing the surface of the first joining layer until the insulating film appears, A joining step of disposing the uncured second joining layer on the first joining layer after polishing, laminating the plate-like member on the second joining layer, and curing the second joining layer to join the plate-like member and the base member, A method for manufacturing a holding device characterized by including the above.

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