Sputtering apparatus, sputtering method

Abstract

To reduce generation of unevenness in film thickness distribution and film quality distribution, in sputtering where a magnet scans a glass substrate target.SOLUTION: A sputtering device changes a B vertical zero position B⊥0 where a vertical magnetic field component formed by a magnet becomes zero in accordance with an oscillation position of a magnet 25 relative to a glass substrate 11 when the magnet oscillates.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present invention relates to a sputtering apparatus, and particularly to a technique suitable for use in film formation having a magnetron cathode.

Background Art

[0002] In a film forming apparatus having a magnetron cathode, a method of moving a magnet relative to a target is known for the purpose of improving the utilization efficiency of the target and the like.

[0003] Also, as in the technique disclosed in Patent Document 1, for the purpose of improving the uniformity of film formation and the like, in addition to the movement of the magnet, it is also known to swing the cathode and the target with respect to the substrate to be film-formed.

[0004] Also, as in the technique disclosed in Patent Document 2, for the purpose of preventing the generated particles from having an adverse effect on film formation in the sputtering chamber, it is known to swing the magnet and the cathode.

[0005] Furthermore, as a technique for swinging the substrate to be film-formed with respect to the magnet and the cathode, the present applicants have disclosed a technique such as Patent Document 3.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0007] However, in the technique of scanning (oscillating) a magnet with respect to a target as described above, there is still a problem that unevenness occurs in the film thickness distribution and the film quality distribution and has not been resolved yet.

[0008] In particular, in a multi-magnet sputtering apparatus, the film formation characteristics may vary due to the oscillation of the magnet. Here, at the oscillation end of the magnet, the behavior of the plasma changes greatly, and it may become difficult to adjust the film formation characteristic distribution such as the film thickness and the sheet resistance. Furthermore, when the magnet oscillates, the change over time of the film formation characteristics is large, and frequent adjustment and maintenance of the magnet are required.

[0009] In addition, in a magnetron sputtering apparatus (oscillating type magnetron sputtering apparatus) that oscillates a magnet, when setting the magnetron cathode electrode, delicate setting and fine adjustment of the oscillation width of the magnet configuration body are required. However, with the recent increase in the size of the apparatus, such setting and adjustment may cause difficulties.

[0010] When the setting and adjustment in the oscillation of the magnet are incomplete, problems such as the position where the perpendicular magnetic field component becomes 0 on the target surface shifting or the spreading state of the plasma shifting occur. This problem is prominent when the magnet is located at the end of the oscillation width.

[0011] Also, if the setting and adjustment in the oscillation of the magnet are incomplete, the oscillation width deviates from the set value, and when the magnet is located at the end of the oscillation width, mainly the backing plate is sputtered. For this reason, not only the target but also the area around the target may be sputtered, and a small amount of impurities from the backing plate or the like may be mixed into the formed film, resulting in the film composition not being within the desired range and the film quality deteriorating.

[0012] In addition, an improvement measure of increasing the target size to provide a margin can be considered, but there are concerns that it may lead to a decrease in the usage efficiency of the target or that the device size may have to be further increased.

[0013] Furthermore, when trying to prevent such problems by reducing the plasma generation region with respect to the target, or when reducing the swing width of the magnet, there were cases where problems such as the formed film composition not being within the desired range occurred.

[0014] In addition, when solving these problems, as for components capable of the same operation and action, there was a requirement to make the configuration as simple as possible in the processing chamber. Therefore, there was a requirement to improve the plasma generation state rather than improving the drive system such as the magnet.

[0015] The present invention has been made in view of the above circumstances and aims to achieve the following objects. 1. To stabilize the behavior of plasma with a simple configuration. 2. To stabilize the behavior of plasma without being affected by the swing of the magnet. 3. To facilitate the adjustment of the plasma generation state. 4. To facilitate the adjustment of the film formation characteristics. 5. To achieve the uniformity of the film formation characteristics.

Means for Solving the Problems

[0016] As described above, there was a problem that the behavior of plasma changed greatly at the swing end of the magnet, making it difficult to adjust the film formation characteristic distribution such as film thickness and sheet resistance. The inventors of the present invention found that this phenomenon was caused by the distance variation between the magnet and the ground, particularly when the distance between the magnet and the ground became short, and solved the problem as follows.

[0017] The sputtering apparatus of the present invention is A cathode unit that emits sputtering particles toward the film formation region of the substrate to be coated, A target in which an erosion region is formed, A magnet that is disposed on the side opposite to the substrate to be coated with respect to the target and forms the erosion region on the target, A magnet scanning unit that can reciprocate in a swinging direction (scanning direction) that is a unidirectional direction along the substrate surface relative to the magnet and the substrate to be coated, A control unit that is connected to the magnet and the magnet scanning unit and controls magnetic field formation and reciprocating operation, A sputtering apparatus having: The magnet , front Along the surface of the substrate to be coated arranged on the flat yoke surface, orthogonal to the swinging direction Direction a central magnet part arranged linearly with its longitudinal direction and divided in the longitudinal direction, a peripheral magnet part provided so as to surround the central magnet part and divided in the longitudinal direction, having the longitudinal direction of the central magnet part At the end are adjacently arranged so as to be independently supplied with current and generate different magnetic fields Is provided with an electromagnet, The control unit A switching point is set corresponding to the swinging position of the magnet with respect to the target during swinging, When the magnet passes through the switching point, the vertical magnetic field component formed by the magnet is made zero at the B-vertical zero position, and the surface direction magnetic field intensity in the direction along the target surface are independently varied By doing so, the above problems are solved. The sputtering apparatus of the present invention When the magnet passes through the switching point, the B-vertical zero position formed by the magnet can be changed It is possible. In the sputtering apparatus of the present invention, When the magnet passes through the switching point, it is preferable that the surface direction magnetic field intensity in the direction along the target surface formed by the magnet does not change. This is preferable. The sputtering apparatus of the present invention is The switching point is set at positions close to both ends in the swinging direction, and when the end of the magnet in the swinging direction passes through the switching point, the B perpendicular zero position formed by the magnet is changed can be done. The sputtering apparatus of the present invention is When the end of the magnet in the swinging direction passes through the switching point, in the magnets on both ends in the swinging direction, the region formed by the B perpendicular zero position when viewing the magnet from the film-forming substrate is increased can be done. The sputtering apparatus of the present invention is A positive current is applied to the magnet that varies the B perpendicular zero position, and the region formed by the B perpendicular zero position when viewing the magnet from the film-forming substrate can be increased. The sputtering apparatus of the present invention is When the end of the magnet in the swinging direction passes through the switching point, in the magnet on the central side in the swinging direction, the region formed by the B perpendicular zero position when viewing the magnet from the film-forming substrate is reduced can be done. The sputtering apparatus of the present invention is A negative current is applied to the magnet that varies the B perpendicular zero position, and the region formed by the B perpendicular zero position when viewing the magnet from the film-forming substrate can be reduced. The sputtering apparatus of the present invention is The cathode unit is The magnet is the arranged on a flat yoke having a central region on the surface, the and is arranged linearly in the central region of the yoke a central magnet portion, and a peripheral magnet portion that surrounds the central magnet portion the is provided so as to surround the central magnet portion the It has a peripheral magnet portion, and has a parallel region in which the central magnet portion and the peripheral magnet portion are parallel to each other. A magnetic circuit provided on the surface of the yoke. A backing plate disposed overlapping the magnetic circuit. It includes A plurality of the magnets are arranged side by side in the swinging direction. When the magnet passes through the switching point, Power is supplied to the magnets at both end positions and the magnet at the central position under different conditions in the swinging direction to vary the B perpendicular zero position. This can be done. The sputtering apparatus of the present invention When the magnet passes through the switching point, The magnetic field region formed at both end positions in the swinging direction by the magnet expands in a shape that extends in the direction along the surface of the substrate to be film-formed perpendicular to the swinging direction compared to the magnetic field region formed at the central position in the swinging direction. This can be done. The sputtering method of the present invention A cathode unit having a target capable of emitting sputtering particles toward a formation region of a substrate to be film-formed has a magnet that forms an erosion region on the target. front The magnet is reciprocally operated relative to the substrate to be film-formed in a swinging direction (scanning direction) that is one direction along the surface of the substrate by a magnet scanning unit. This is a sputtering method. The magnet is arranged on the flat yoke surface along the surface of the substrate to be film-formed, and includes a central magnet part arranged linearly with the direction orthogonal to the swinging direction as the longitudinal direction and divided in the longitudinal direction, and a peripheral magnet part provided so as to surround the central magnet part and divided in the longitudinal direction. At the longitudinal ends of the central magnet part, electromagnets are provided which are adjacently arranged so as to be independently supplied with current and generate different magnetic fields. A switching point is set corresponding to the swinging position of the magnet with respect to the target during swinging. The B perpendicular zero position where the perpendicular magnetic field component formed by the magnet becomes zero and the surface direction magnetic field strength in the direction along the target surface are independently varied. By doing so, the above problems are solved. The sputtering method of the present invention When the magnet passes through the switching point, the B-vertical zero position formed by the magnet can be changed. This can be done. The sputtering method of the present invention is When the magnet passes through the switching point, the surface-direction magnetic field strength in the direction along the target surface formed by the magnet is not changed. This can be done. The sputtering method of the present invention is The switching point is set at positions close to both ends in the swinging direction, When the swinging-direction end of the magnet passes through the switching point, the B-vertical zero position formed by the magnet can be changed. This can be done. The sputtering method of the present invention is When the swinging-direction end of the magnet passes through the switching point, In the magnet on both ends in the swinging direction, the region formed by the B-vertical zero position when viewing the magnet from the film-forming substrate is increased. This can be done. The sputtering method of the present invention is A positive current is applied to the magnet that varies the B-vertical zero position, and the region formed by the B-vertical zero position when viewing the magnet from the film-forming substrate can be increased. The sputtering method of the present invention is When the swinging-direction end of the magnet passes through the switching point, In the magnet on the central side in the swinging direction, the region formed by the B-vertical zero position when viewing the magnet from the film-forming substrate is reduced. This can be done. The sputtering method of the present invention is A negative current is applied to the magnet that varies the B-vertical zero position, and the region formed by the B-vertical zero position when viewing the magnet from the film-forming substrate can be reduced. In the sputtering method of the present invention, in the magnet arranged in a plurality of rows in the swinging direction, when the magnet passes through the switching point, in the swinging direction, power is supplied to the magnets at both end positions and the magnet at the central position under different conditions to vary the B-vertical zero position. This can be achieved. In the sputtering method of the present invention, when the magnet passes through the switching point, the magnetic field regions formed at both end positions in the swinging direction by the magnet expand in a shape that extends in the direction along the surface of the substrate to be film-formed perpendicular to the swinging direction more than the magnetic field region formed at the central position in the swinging direction. This can be achieved.

[0018] The sputtering apparatus of the present invention includes a cathode unit that emits sputtering particles toward the formation region of the substrate to be film-formed, a target in which an erosion region is formed, a magnet that is disposed on the side opposite to the substrate to be film-formed with respect to the target and forms the erosion region in the target, a magnet scanning unit that can reciprocate in a swinging direction (scanning direction) that is a unidirectional direction along the substrate surface relative to the magnet and the substrate to be film-formed, a control unit that is connected to the magnet and the magnet scanning unit and controls magnetic field formation and reciprocating operation, and is a sputtering apparatus having the control unit varies the B-vertical zero position at which the vertical magnetic field component formed by the magnet becomes zero corresponding to the swinging position of the magnet with respect to the target during swinging. This makes it possible to control the plasma formation region by means of the magnetic field formed by the magnet. At this time, among the film characteristics affected by the plasma, it is possible to easily adjust the distribution of the sheet resistance value due to the film thickness and the composition ratio. Moreover, since the B perpendicular zero position can be varied without significantly affecting the surface magnetic field strength in the direction along the target surface, the degree of freedom of adjustment can be improved.

[0019] The sputtering apparatus of the present invention At any swinging position of the magnet with respect to the target during swinging, the B perpendicular zero position formed by the magnet is changed. This makes it possible to suppress fluctuations in the state of the generated plasma as the distance between the magnet and the ground changes according to the swing, or to control the state of the generated plasma corresponding to the swing position. Therefore, it is possible to easily adjust the distribution of the sheet resistance value due to the film thickness and the composition ratio caused by fluctuations in the plasma. Moreover, since the B perpendicular zero position can be varied without significantly affecting the surface magnetic field strength in the direction along the target surface, the degree of freedom of adjustment can be improved.

[0020] In the sputtering apparatus of the present invention, At any swinging position of the magnet with respect to the target during swinging, the B perpendicular zero position formed by the magnet and the surface magnetic field strength in the direction along the target surface are independently changed. By individually adjusting the B perpendicular zero position and the surface magnetic field strength, it becomes easy to perform initial distribution adjustment by the B perpendicular zero position and adjustment corresponding to changes over time by the surface magnetic field strength. Furthermore, by individually adjusting the B perpendicular zero position and the surface magnetic field strength, it is possible to easily improve the utilization efficiency of the target material and reduce the non-erosion part.

[0021] The sputtering apparatus of the present invention is The magnet that changes the B-vertical zero position to be formed is an electromagnet. Thereby, it becomes possible to adjust the magnetic field that generates plasma while the magnet is swinging. Therefore, so-called active control, that is, positive magnetic field adjustment corresponding to the swinging position can be easily performed.

[0022] The sputtering apparatus of the present invention is At the position where the swinging position of the magnet is the end of the swinging width with respect to the target, Change the B-vertical zero position formed by the magnet. Thereby, it becomes possible to adjust the generation state of plasma at the end position of the swinging width where the sheet resistance value is likely to vary due to the film thickness and the composition ratio, and it becomes possible to easily adjust the sheet resistance value due to the film thickness and the composition ratio.

[0023] The sputtering apparatus of the present invention is The magnet that varies the B-vertical zero position is located at the end in the direction along the substrate surface orthogonal to the swinging direction. Thereby, when generating plasma that acts on the target, the plasma state can be preferably adjusted. Specifically, by varying the B-vertical zero position by the magnet at the end, it becomes possible to adjust by expanding or narrowing the region where plasma is generated corresponding to the contour of the magnet facing the substrate to be processed.

[0024] The sputtering apparatus of the present invention is Switching points are set at positions close to both ends in the swinging direction, When the swinging direction end of the magnet passes through the switching point, change the B-vertical zero position formed by the magnet. This makes it possible to adjust the plasma generation state at the end positions of the fluctuation range where the sheet resistance value is likely to vary due to the film thickness and composition ratio, facilitating the adjustment of the sheet resistance value according to the film thickness and composition ratio, and enabling the adjustment of the film thickness distribution and the variation in sheet resistance at positions along the substrate surface.

[0025] The sputtering apparatus of the present invention When the end of the magnet in the swinging direction passes the switching point, In the magnets at both end sides in the swinging direction, the region formed by the B-perpendicular zero position when viewing the magnet from the film-forming substrate is increased. This makes it possible to control the state of the generated plasma corresponding to the swinging position as the distance between the magnet and the ground decreases at the end positions of the swinging width. Specifically, in the swinging direction, control is performed to increase the region formed by the B-perpendicular zero position at both end positions in the swinging direction compared to the central position in the swinging direction. Therefore, it is possible to adjust the plasma generation state at the end positions of the swinging width where the sheet resistance value is likely to vary due to the film thickness and composition ratio, facilitating the adjustment of the sheet resistance value according to the film thickness and composition ratio, and enabling the adjustment of the film thickness distribution and the variation in sheet resistance at positions along the substrate surface.

[0026] The sputtering apparatus of the present invention A positive current is applied to the magnet that varies the B-perpendicular zero position to increase the region formed by the B-perpendicular zero position when viewing the magnet from the film-forming substrate. This makes it possible to increase the region formed by the B-perpendicular zero position when viewing the magnet from the film-forming substrate in the magnets at both end sides in the swinging direction.

[0027] The sputtering apparatus of the present invention When the end of the magnet in the swinging direction passes the switching point, In the magnet on the center side in the rocking direction, the region formed by the B-vertical zero position when viewing the magnet from the film-forming substrate is reduced. Accordingly, corresponding to the reduction in the distance between the magnet and the ground at the end positions of the rocking width, it becomes possible to control the state of the plasma generated at the center position of the rocking width corresponding to the rocking position. Specifically, in the rocking direction, control is performed to reduce the region formed by the B-vertical zero position at the center position in the rocking direction compared to both end positions in the rocking direction. Therefore, corresponding to the end positions of the rocking width where the sheet resistance value is likely to vary due to the film thickness and composition ratio, the generation state of the plasma at the center position can be adjusted, and the adjustment of the sheet resistance value due to the film thickness and composition ratio can be easily performed, and it becomes possible to adjust the film thickness distribution and the variation in the sheet resistance along the position on the substrate surface.

[0028] The sputtering apparatus of the present invention A negative current is applied to the magnet that varies the B-vertical zero position to reduce the region formed by the B-vertical zero position when viewing the magnet from the film-forming substrate. Accordingly, corresponding to the variation in the magnetic field at both end positions in the rocking direction, in the magnet at the center position in the rocking direction, the region formed by the B-vertical zero position when viewing the magnet from the film-forming substrate can be reduced.

[0029] The sputtering apparatus of the present invention The cathode unit The magnet is arranged on a flat yoke having a central region on the surface, The magnet has a central magnet portion linearly arranged in the central region of the yoke and a peripheral magnet portion provided so as to surround the central magnet portion, and has a parallel region in which the central magnet portion and the peripheral magnet portion are parallel to each other, A magnetic circuit provided on the surface of the yoke, A backing plate arranged to overlap the magnetic circuit, and includes A plurality of the magnets for varying the B perpendicular zero position are arranged side by side in the rocking direction. This is possible. Here, as the magnet for changing the formed B perpendicular zero position, the central magnet portion can be an electromagnet and the peripheral magnet portion can be a permanent magnet.

[0030] The sputtering method of the present invention has a cathode unit having a target capable of emitting sputtering particles toward a formation region of a substrate to be film-formed, the target having a magnet for forming an erosion region on the target, wherein the magnet is reciprocally operated relative to the substrate to be film-formed in a rocking direction (scanning direction) that is a single direction along the substrate surface by a magnet scanning unit, and is a sputtering method, corresponding to the rocking position of the magnet with respect to the target during rocking, the B perpendicular zero position where the perpendicular magnetic field component formed by the magnet becomes zero is varied. Thereby, it becomes possible to control a plasma formation region by a magnetic field formed by the magnet. At this time, among the film characteristics affected by the plasma, it is possible to easily adjust the distribution of the sheet resistance value according to the film thickness and the composition ratio. Moreover, since the B perpendicular zero position can be varied without significantly affecting the surface direction magnetic field strength in the direction along the target surface, the degree of freedom of adjustment can be improved.

[0031] The sputtering method of the present invention changes the B perpendicular zero position formed by the magnet at an arbitrary rocking position of the magnet with respect to the target during rocking. Accordingly, as the distance between the magnet and the ground changes according to the oscillation, it is possible to suppress fluctuations in the state of the generated plasma, or to control the state of the generated plasma corresponding to the oscillation position. Therefore, it is possible to easily adjust the distribution of the sheet resistance value due to the film thickness and the composition ratio caused by the fluctuations of the plasma. Moreover, since the B-perpendicular zero position can be varied without significantly affecting the surface magnetic field strength in the direction along the target surface, the degree of freedom of adjustment can be improved.

[0032] The sputtering method of the present invention At any oscillation position of the magnet with respect to the target during oscillation, the B-perpendicular zero position formed by the magnet and the surface magnetic field strength in the direction along the target surface are independently changed. By individually adjusting the B-perpendicular zero position and the surface magnetic field strength, it becomes easy to perform initial distribution adjustment by the B-perpendicular zero position and adjustment corresponding to the change over time by the surface magnetic field strength. Furthermore, by individually adjusting the B-perpendicular zero position and the surface magnetic field strength, it is possible to easily improve the utilization efficiency of the target material and reduce the non-erosion part.

[0033] The sputtering method of the present invention A positive and negative current is applied to the magnet that is an electromagnet to change the formed B-perpendicular zero position. Thereby, it becomes possible to adjust the magnetic field for generating plasma while the magnet is oscillating. Therefore, so-called active control, that is, positive magnetic field adjustment corresponding to the oscillation position can be easily performed.

[0034] The sputtering method of the present invention At the position where the oscillation position of the magnet is the end of the oscillation width with respect to the target Change the B-vertical zero position formed by the magnet. This enables adjustment of the plasma generation state at the end positions of the swing width where the sheet resistance value is likely to vary due to film thickness and composition ratio, making it possible to easily adjust the sheet resistance value according to film thickness and composition ratio.

[0035] The sputtering method of the present invention Change the B-vertical zero position by changing the current applied to the magnet located at the end in the direction along the substrate surface perpendicular to the swing direction. This enables excellent adjustment of the plasma state when generating plasma acting on the target. Specifically, by varying the B-vertical zero position with the magnets at the ends, it becomes possible to adjust by expanding or narrowing the region where plasma is generated corresponding to the contour of the magnet facing the substrate to be processed.

[0036] The sputtering method of the present invention Switching points are set at positions close to both ends in the swing direction, When the end in the swing direction of the magnet passes through the switching point, change the B-vertical zero position formed by the magnet. This enables adjustment of the plasma generation state at the end positions of the swing width where the sheet resistance value is likely to vary due to film thickness and composition ratio, facilitating adjustment of the sheet resistance value according to film thickness and composition ratio, and making it possible to adjust the film thickness distribution and the variation in sheet resistance at positions along the substrate surface.

[0037] The sputtering method of the present invention When the end in the swing direction of the magnet passes through the switching point, In the magnets on both end sides in the swing direction, increase the region formed by the B-vertical zero position when viewing the magnet from the film-forming substrate. Accordingly, as the distance between the magnet and the ground decreases at the end position of the swing width, it becomes possible to control the state of the generated plasma corresponding to the swing position. Specifically, in the swing direction, control is performed to increase the region formed by the B-vertical zero position at both end positions in the swing direction compared to the central position in the swing direction. Therefore, it becomes possible to adjust the plasma generation state at the end position of the swing width where the sheet resistance value is likely to vary due to the film thickness and the composition ratio, and to easily adjust the sheet resistance value due to the film thickness and the composition ratio, thereby adjusting the film thickness distribution and the variation in sheet resistance at positions along the substrate surface.

[0038] The sputtering method of the present invention applies a positive current to the magnet that varies the B-vertical zero position to increase the region formed by the B-vertical zero position when viewing the magnet from the film-forming substrate. Accordingly, in the magnet at both end sides in the swing direction, the region formed by the B-vertical zero position when viewing the magnet from the film-forming substrate can be increased.

[0039] The sputtering method of the present invention when the swing direction end of the magnet passes through the switching point, in the magnet on the central side in the swing direction, the region formed by the B-vertical zero position when viewing the magnet from the film-forming substrate is reduced. Accordingly, in response to the reduction in the distance between the magnet and the ground at the end position of the swing width, it becomes possible to control the state of the plasma generated at the central position of the swing width in correspondence with the swing position. Specifically, in the swing direction, control is performed to reduce the region formed by the B-perpendicular zero position at the central position in the swing direction compared to the both end positions in the swing direction. Therefore, in response to the end position of the swing width where the sheet resistance value is likely to vary due to the film thickness and the composition ratio, the generation state of the plasma at the central position can be adjusted, and the adjustment of the sheet resistance value due to the film thickness and the composition ratio can be easily performed, making it possible to adjust the film thickness distribution and the variation in the sheet resistance at the position along the substrate surface.

[0040] The sputtering method of the present invention is Applying a negative current to the magnet that varies the B-perpendicular zero position to reduce the region formed by the B-perpendicular zero position as viewed from the film-forming substrate to the magnet. Accordingly, in response to the variation in the magnetic field at both end positions in the swing direction, it is possible to reduce the region formed by the B-perpendicular zero position as viewed from the film-forming substrate to the magnet at the magnet that is the central position in the swing direction.

[0041] The sputtering method of the present invention is Varying the B-perpendicular zero position in the magnet arranged in a plurality of rows in the swing direction can be done.

Effect of the Invention

[0042] According to the present invention, it is possible to suppress the variation in the state of the generated plasma as the distance between the magnet and the ground changes according to the swing, or to control the state of the generated plasma in correspondence with the swing position, and it is possible to provide a sputtering apparatus and a sputtering method capable of easily adjusting the distribution of the sheet resistance value due to the film thickness and the composition ratio caused by the variation of the plasma.

Brief Description of the Drawings

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Best Mode for Carrying Out the Invention

[0044] Hereinafter, a first embodiment of a sputtering apparatus and a sputtering method according to the present invention will be described with reference to the drawings. FIG. 1 is a schematic plan view showing a sputtering apparatus according to this embodiment. In the figure, reference numeral 1 denotes a sputtering apparatus.

[0045] The sputtering apparatus 1 according to this embodiment is, for example, an in-line type vacuum processing apparatus that performs heat treatment, film formation treatment, etching treatment, etc. on a substrate made of glass or resin in a vacuum environment when forming a TFT (Thin Film Transistor) on a substrate made of glass or the like in a semiconductor manufacturing process or a manufacturing process of an FPD (flat panel display) such as a liquid crystal display or an organic EL display.

[0046] In this embodiment, as the glass substrate (transparent substrate) 11, a rectangular substrate with a side length of about 100 mm to 2000 mm or more can be applied, and further, a substrate with a thickness of 1 mm or less, a substrate with a thickness of several mm, or a substrate with a thickness of 10 mm or more can also be used.

[0047] As shown in FIG. 1, the sputtering apparatus 1 includes a load / unload chamber 2 for loading / unloading a substantially rectangular glass substrate 11 (substrate to be processed), and a pressure-resistant film formation chamber 4 (vacuum chamber) for forming a film such as a transparent conductive film of ZnO-based or In2O3-based, a metal or oxide such as aluminum or silver, or other films on the glass substrate 11 by a sputtering method, and a transfer chamber 3 located between the film formation chamber 4 and the load / unload chamber 2 (vacuum chamber). The sputtering apparatus 1 according to this embodiment is shown as a side sputtering type in FIG. 1, but it can also be a sputter-down type or a sputter-up type.

[0048] Note that the sputtering apparatus 1 is provided with a film formation chamber 4A (vacuum chamber) and a load / unload chamber 2a (vacuum chamber). These plurality of chambers 2, 2a, 4, 4A are formed so as to surround the transfer chamber 3. Such chambers may be configured to have, for example, two load / unload chambers (vacuum chambers) formed adjacent to each other and a plurality of processing chambers (vacuum chambers). For example, one load / unload chamber 2 is a load chamber for loading the glass substrate 11 from the outside into the sputtering apparatus 1 (vacuum processing apparatus), and the other load / unload chamber 2a is an unload chamber for unloading the glass substrate 11 from the inside of the sputtering apparatus 1 to the outside. Also, a configuration may be adopted in which the film formation chamber 4 and the film formation chamber 4A perform different film formation processes.

[0049] A partition valve may be formed between each of these chambers 2, 2a, 4, 4A and the transfer chamber 3.

[0050] In the load / unload chamber 2, a positioning member that can be aligned by setting the placement position of the glass substrate 11 carried in from the outside of the sputtering apparatus 1 may be arranged. The load / unload chamber 2 is also provided with a rough evacuation device (rough evacuation means, low vacuum evacuation device) such as a rotary pump for evacuating the inside of this chamber to a rough vacuum.

[0051] As shown in FIG. 1, a transfer device (transfer robot) 3a is arranged inside the transfer chamber 3. The transfer device 3a has a rotating shaft, a robot arm attached to this rotating shaft, a robot hand formed at one end of the robot arm, and a vertical movement device for moving the robot hand up and down. The robot arm is composed of first and second active arms that can be bent with respect to each other and first and second passive arms. The transfer device 3a can move the glass substrate 11, which is an object to be transferred, between each of the chambers 2, 2a, 4, 4A and the transfer chamber 3.

[0052] As shown in Fig. 1, the film forming chamber 4 is provided with a cathode device 10, a substrate holding portion 13 which is a substrate holder having a mask or the like, a gas introduction device (gas introduction means), and a high vacuum evacuation device (high vacuum evacuation means). As shown in Fig. 1, the interior of the film forming chamber 4 is composed of a front space 41 where the surface of the glass substrate 11 is exposed during film formation and a back space 42 located on the back side of the glass substrate 11. The cathode device 10 is disposed in the front space 41.

[0053] The cathode device 10 is erected at the position farthest from the transfer port 4a connected to the transfer chamber 3 inside the film forming chamber 4. As shown in Fig. 1, the substrate holding portion 13 (substrate holding means) is provided inside the back space 42. The substrate holding portion 13 is capable of supporting the glass substrate 11 carried in from the transfer port 4a.

[0054] The substrate holding portion 13 (substrate holding means) holds the glass substrate 11 so that the target 23 described later and the surface 11a to be processed of the glass substrate 11 face each other during film formation. During film formation, the substrate holding portion 13 holds the glass substrate 11 at a position corresponding to the film forming port 4b.

[0055] The substrate holding portion 13 may include a swing shaft that extends substantially parallel to the transfer port 4a and / or the film forming port 4b at a lower position in the back space 42, and a holding portion that is attached to the swing shaft and holds the back surface of the glass substrate 11. The gas introduction device (gas introduction means) introduces gas into the film forming chamber 4. The high vacuum evacuation device (high vacuum evacuation means) is a turbo molecular pump or the like that evacuates the inside of the film forming chamber 4 to a high vacuum.

[0056] Fig. 2 is a perspective view showing the cathode device of the sputtering apparatus 1 in the present embodiment. Fig. 3 is a schematic diagram showing the positional relationship between the configuration of the glass substrate and the cathode device in the sputtering apparatus of the present embodiment. The cathode device 10 is swingable in the X direction with respect to the glass substrate 11 at the film forming position (plasma treatment position) inside the film forming chamber 4. The cathode device 10 has one cathode unit 22. The cathode unit 22 is disposed in the cathode box 10A as shown in FIG. 2.

[0057] FIG. 4 is a schematic perspective view showing the positional relationship between the glass substrate and the magnet in the sputtering apparatus of the present embodiment. As shown in FIGS. 3 to 4, the cathode unit 22 is disposed along the ZX plane facing the surface of the glass substrate 11. In the cathode unit 22, the target 23, the backing plate 24, and the magnet (magnetic circuit) 25 are arranged in this order in the Y direction away from the position close to the glass substrate 11.

[0058] FIG. 5 is a front view showing the positional relationship between the glass substrate, the target, and the magnet in the sputtering apparatus of the present embodiment. The target 23 is disposed in a flat plate shape along the ZX plane facing the glass substrate 11. The target 23 is exposed at a position facing the glass substrate 11 on the surface of the cathode box 10A as shown in FIG. 2. As shown in FIGS. 3 to 5, the target 23 has a width longer than that of the glass substrate 11 in the Z direction. Further, the target 23 has a width larger than that of the glass substrate 11 in the X direction which is the swinging direction.

[0059] The backing plate 24 is formed in a flat plate shape along the ZX plane facing the glass substrate 11 and is joined to the surface of the target 23 not facing the glass substrate 11. A control unit 26 having a DC power source is connected to the backing plate 24. The DC power supplied from the DC power source is supplied to the target 23 through the backing plate 24. Instead of using a DC power source as the cathode power source, a DC power source, a pulse power source, and an RF power source may be used.

[0060] In the cathode unit 22, the target 23 is disposed along the ZX plane facing the film forming surface 11a of the glass substrate 11. A plurality of magnets 25 are provided on the back side (the backing plate 24 side) of the target 23 in the cathode unit 22.

[0061] The plurality of magnets 25 are erected as a multi-connected magnet such that their longitudinal directions are in the Z direction so as to be parallel to each other. The plurality of magnets 25 are arranged at equal intervals in the X direction. In this embodiment, for example, nine magnets 25 are adjacent to each other in the X direction, but the number can be set according to the area of the glass substrate 11, the area of the target 23, or the swing range of the magnet 25 described later.

[0062] Note that in the cathode unit 22 of this embodiment, the target 23 is fixed to the glass substrate 11 and is fixed to the film forming chamber (chamber) 4.

[0063] Each magnet (magnetic circuit) 25 forms a magnetron magnetic field on the surface 23a of the target 23 facing the glass substrate 11. Each magnet 25 is individually connected to the control unit 26 so that the magnetic field state generated individually can be controlled.

[0064] When the Y direction along the normal to the surface 23a of the target 23 is the normal direction, the density of the plasma generated in the gap between the surface 23a of the target 23 and the surface 11a of the glass substrate 11 is the highest at the B perpendicular zero position B⊥0 where the magnetic field component along the normal direction in the magnetron magnetic field formed by the magnet 25 is 0. Hereinafter, in the magnetron magnetic field formed by the magnet 25, the region where the magnetic field component along the normal direction is 0 is the region with a high plasma density.

[0065] FIG. 6 is an enlarged front view showing an end portion of the magnet in the sputtering apparatus according to this embodiment. FIG. 7 is a cross-sectional view taken along the arrow showing the magnet in the sputtering apparatus of this embodiment. FIG. 8 is a cross-sectional view taken along the arrow showing the magnet in the sputtering apparatus of this embodiment. As shown in FIGS. 5 to 8, the magnet 25 has a yoke 31, a peripheral magnet portion 32, and a central magnet portion 33.

[0066] The yoke 31 is a substantially rectangular flat magnet base having a central region on its surface. The central magnet portion 33 is a composite magnet body with the Z direction as its longitudinal direction. The central magnet portion 33 is linearly arranged at the central position of the central region. The peripheral magnet portion 32 is a substantially oval ring magnet that is spaced apart from the central magnet portion 33 and surrounds the central magnet portion 33 in the plane of the magnet base (yoke) 31. The central magnet portion 33 and the peripheral magnet portion 32 constitute a magnetic circuit.

[0067] The central magnet portion 33 and the peripheral magnet portion 32 have a parallel region where they are parallel to each other in the central portion of the Z direction, which is the longitudinal direction of the magnet 25. Both the central magnet portion 33 and the peripheral magnet portion 32 are divided in the Z direction in which they extend. Both the central magnet portion 33 and the peripheral magnet portion 32 are formed by continuously arranging the divided individual magnets in the Z direction.

[0068] As shown in FIGS. 5 to 8, the peripheral magnet portion 32 has an end peripheral magnet portion 32a that extends in the X direction at a position that is the end in the Z direction. The peripheral magnet portion 32 has a first peripheral magnet portion 32b that extends in the Z direction, which is the longitudinal direction, adjacent to the end peripheral magnet portion 32a. The end peripheral magnet portion 32a may have a portion that extends in the Z direction at a position adjacent to the first peripheral magnet portion 32b.

[0069] The peripheral magnet portion 32 has a second peripheral magnet portion 32c that extends adjacent to the first peripheral magnet portion 32b in the Z direction opposite to the end peripheral magnet portion 32a in the longitudinal direction. The peripheral magnet portion 32 has a third peripheral magnet portion 32d that extends adjacent to the second peripheral magnet portion 32c in the Z direction opposite to the first peripheral magnet portion 32b in the longitudinal direction.

[0070] The peripheral magnet portion 32 has a fourth peripheral magnet portion 32e that extends adjacent to the third peripheral magnet portion 32d in the Z direction opposite to the second peripheral magnet portion 32c in the longitudinal direction. The peripheral magnet portion 32 has a fifth peripheral magnet portion 32f that extends adjacent to the fourth peripheral magnet portion 32e in the Z direction opposite to the third peripheral magnet portion 32d in the longitudinal direction.

[0071] The peripheral magnet portion 32 has a divided portion that extends further adjacent in the Z direction adjacent to the fifth peripheral magnet portion 32f in a parallel region, but the description thereof is omitted.

[0072] In the peripheral magnet portion 32, the end peripheral magnet portion 32a, the first peripheral magnet portion 32b, the second peripheral magnet portion 32c, the third peripheral magnet portion 32d, and the fourth peripheral magnet portion 32e are all permanent magnets. In the peripheral magnet portion 32, the end peripheral magnet portion 32a, the first peripheral magnet portion 32b, the second peripheral magnet portion 32c, the third peripheral magnet portion 32d, and the fourth peripheral magnet portion 32e may be configured to generate different magnetic fields independently, or may be configured to generate magnetic fields of equal strength. In the peripheral magnet portion 32, the fifth magnet portion 32f and the divided portion that further extends in the Z direction from the fifth magnet portion 32f are permanent magnets.

[0073] As shown in FIGS. 5 to 8, the central magnet portion 33 has a first coil portion 35b at a position that is the end in the Z direction which is the longitudinal direction. The first coil portion 35b is adjacent to the end peripheral magnet portion 32a in the Z direction. The first coil portion 35b is configured by winding a coil wire around a Y-direction axis that is perpendicular to the plane of the paper in FIG. 6. The first coil portion 35b has a first core portion 34b at the center of the coil. The first core portion 34b is a permanent magnet. The first coil portion 35b is arranged at a position that coincides with the first peripheral magnet portion 32b in the Z direction. The center of the first core portion 34b is arranged at a position that is substantially the same as the central position of the first peripheral magnet portion 32b in the Z direction. The first coil portion 35b does not contact the end peripheral magnet portion 32a and the first peripheral magnet portion 32b.

[0074] The central magnet portion 33 has a second coil portion 35c that is adjacent to the first coil portion 35b in the longitudinal direction and is adjacent in the Z direction on the side opposite to the end peripheral magnet portion 32a. The second coil portion 35c has a second core portion 34c at the center of the coil. The second core portion 34c is a permanent magnet. The second coil portion 35c is arranged at a position that coincides with the second peripheral magnet portion 32c in the Z direction. The center of the second core portion 34c is arranged at a position that is substantially the same as the central position of the second peripheral magnet portion 32c in the Z direction. The second coil portion 35c does not contact the first coil portion 35b and the second peripheral magnet portion 32c.

[0075] The central magnet portion 33 has a third coil portion 35d that is adjacent to the second coil portion 35c in the longitudinal direction and is adjacent in the Z direction on the side opposite to the first coil portion 35b. The third coil portion 35d has a third core portion 34d at the center of the coil. The third core portion 34d is a permanent magnet. The third coil portion 35d is arranged at a position that coincides with the third peripheral magnet portion 32d in the Z direction. The center of the third core portion 34d is arranged at a position that is substantially the same as the central position of the third peripheral magnet portion 32d in the Z direction. The third coil portion 35d does not contact the second coil portion 35c and the third peripheral magnet portion 32d.

[0076] The central magnet portion 33 has a fourth coil portion 35e that is adjacent to the third coil portion 35d in the longitudinal direction and is adjacent in the Z direction on the side opposite to the second coil portion 35c. The fourth coil portion 35e has a fourth core portion 34e at the center of the coil. The fourth core portion 34e is a permanent magnet. The fourth coil portion 35e is arranged at a position that coincides with the fourth peripheral magnet portion 32e in the Z direction. The center of the fourth core portion 34e is arranged at a position that is substantially the same as the central position of the fourth peripheral magnet portion 32e in the Z direction. The fourth coil portion 35e does not contact the third coil portion 35d and the fourth peripheral magnet portion 32e.

[0077] The central magnet portion 33 has a fifth magnet portion 37 that is adjacent to the fourth coil portion 35e and is adjacent in the Z direction on the side opposite to the third coil portion 35d in the longitudinal direction. The fifth magnet portion 37 is a permanent magnet. The fifth magnet portion 37 is arranged at a position that coincides with the fifth peripheral magnet portion 32f in the Z direction. The fifth magnet portion 37 is arranged substantially parallel to the fifth peripheral magnet portion 32f. As shown in FIG. 8, the fifth magnet portion 37 is arranged at substantially the same position as the first core portion 34b to the fourth core portion 34e in the X direction. The fifth magnet portion 37 has substantially the same Z-direction length as the fifth peripheral magnet portion 32f in the Z direction. The fifth magnet portion 37 is not in contact with the fourth coil portion 35e and the fifth peripheral magnet portion 32f.

[0078] The central magnet portion 33 has a divided portion that extends further in the Z direction adjacent to the fifth magnet portion 37 and has a parallel region, but the description thereof is omitted. In the central magnet portion 33, the first coil portion 35b, the second coil portion 35c, the third coil portion 35d, and the fourth coil portion 35e are all connected to a control unit 26 (FIG. 3) having a power supply function as a power source. In the central magnet portion 33, the first coil portion 35b, the second coil portion 35c, the third coil portion 35d, and the fourth coil portion 35e can be independently supplied with current to generate different magnetic fields.

[0079] In the central magnet portion 33, the first core portion 34b, the second core portion 34c, the third core portion 34d, and the fourth core portion 34e all have a Y-direction end portion on the side opposite to the yoke 31 adjacent to the long core portion 36. The long core portion 36 is arranged at substantially the same X-direction position as the fifth magnet portion 37. The long core portion 36 is a permanent magnet or a magnetic material. In the central magnet portion 33, the long core portion 36 forms a magnetic circuit with the end peripheral magnet portion 32a, the first peripheral magnet portion 32b, the second peripheral magnet portion 32c, the third peripheral magnet portion 32d, and the fourth peripheral magnet portion 32e of the peripheral magnet portion 32. In the central magnet portion 33, in the first coil portion 35b to the fifth coil portion 35e, current can be independently supplied to adjust the magnetic field strength and the distribution of the generated magnetic field in the magnetic circuit formed by the long core portion 36 and the peripheral magnet portion 32.

[0080] In FIGS. 6 to 8, one end of the magnet 25 is shown, but the other end of the magnet 25 also has the same configuration as the above-described one end.

[0081] The cathode device 10 includes a magnet scanning unit 29 that moves the magnet 25 along a swinging direction that is one scanning direction. The swinging direction is the X direction orthogonal to the Z direction in which a plurality of magnets 25 are erected. The magnet scanning unit 29 changes the position of the magnet 25 with respect to the target 23. The magnet scanning unit 29 can swing without changing the relative positional relationship of the plurality of magnets 25. That is, each of the magnets 25 can be moved (swung) parallel to the particle emission surface of the target 23 by the magnet scanning unit 29 with respect to the target 23.

[0082] The magnet scanning unit 29 is composed of, for example, a rail extending along the scanning direction, rollers attached to each of the two end portions in the X direction of the cathode unit 22, and a plurality of motors for rotating each of the rollers. The magnet scanning unit 29 may be composed of an LM guide or the like having a rail extending along the scanning direction.

[0083] The rail of the magnet scanning unit 29 has a width that is about the same as or longer than that of the target 23 in the scanning direction (X direction). Note that the magnet scanning unit 29 may be embodied in other configurations as long as it can move a plurality of magnets 25 integrally along the scanning direction.

[0084] FIG. 9 is a schematic diagram showing the swinging of the magnet in the sputtering apparatus of the present embodiment. FIG. 10 is a schematic diagram showing the swinging of the magnet in the sputtering apparatus of the present embodiment. In FIG. 10, the vertical axis represents time and the horizontal axis represents the position in the X direction. In the cathode unit 22 according to the present embodiment, as shown in FIGS. 4, 9, and 10, when forming a film by emitting sputter particles by the magnet scanning unit 29, the magnet 25 is reciprocally moved between the swing end position Revers and the swing end position Forward.

[0085] In the cathode unit 22, as shown in FIG. 10, a multi-connected magnet composed of a plurality of magnets 25 is moved by the magnet scanning unit 29 from the central position center of the magnet 25 to the swing end position Forward in the right direction in the figure, further from the swing end position Forward to the swing end position Revers via the central position center in the left direction, and further from the swing end position Revers to the central position center, and one scan is completed. In the cathode unit 22, as shown in FIG. 10, this scan is repeated a plurality of times.

[0086] At the same time, in the magnet 25, the current applied to the divided portion at the Z-direction end from the control unit 26 as a power source is changed to change the magnetic field profile formed by the magnet 25. Specifically, by applying an applied current, the B perpendicular zero position B⊥0 where the magnetic field component along the Y direction (normal direction) in the magnetron magnetic field formed by the magnet 25 is 0 (B⊥0) is changed.

[0087] The current to the divided portion located at the Z-direction end of the magnet 25 is controlled to vary the B perpendicular zero position B⊥0 in the Z direction. At this time, the B parallel intensity B / / , which is the magnetic field component in the direction along the ZX plane in the magnetron magnetic field formed by the magnet 25, can be made to hardly change.

[0088] In the present embodiment, the current applied to the first coil portion 35b located at the Z-direction end of the magnet 25 is changed to change the magnetic field profile formed by the magnet 25.

[0089] Here, an example of the magnetic field profile formed by the magnet in the present embodiment will be described.

[0090] FIG. 11 is a graph showing the movement state of the B perpendicular zero position B⊥0 generated by the magnet of the sputtering apparatus in the present embodiment. In this case, by changing the current applied to the first coil portion 35b so as to increase positively, as shown in FIG. 11, the B perpendicular zero position B⊥0 can be moved toward the outside of the magnet 25 in the Z direction. Here, in FIG. 11, 0A indicates the state of the B perpendicular zero position B⊥0 corresponding to the change in the current applied to the first coil portion 35b, and indicates the state where it is not changed. Further, in FIG. 11, +9A indicates the state of the B perpendicular zero position B⊥0 corresponding to the change in the current applied to the first coil portion 35b, and indicates the state where the current is positively changed.

[0091] Thereby, as shown in FIG. 11, the plasma generation region formed by the magnet 25 can be extended in the Z direction.

[0092] Furthermore, in this case, the current to the divided portion located in the parallel region near the center of the magnet 25 in the Z direction can be controlled so as not to change. Thereby, the plasma generation region formed by the magnet 25 can be made not to change in the X direction as compared with the case where the current to the divided portion located at the Z-direction end of the magnet 25 is not changed.

[0093] FIG. 12 is a graph showing the movement state of the parallel magnetic field strength generated by the magnet of the sputtering apparatus in the present embodiment. At this time, as shown in FIG. 11, even when the plasma generation region formed by the magnet 25 is extended in the Z direction, as shown in FIG. 12, the B parallel intensity, which is the magnetic field component (B / / ) in the direction along the ZX plane of the magnetron magnetic field formed by the magnet 25, can be made to hardly change.

[0094] Here, in FIG. 12, 0A indicates the parallel magnetic field intensity (surface direction magnetic field intensity) B / / corresponding to the variation of the current applied to the first coil portion 35b, showing a state where it is not fluctuating. Also, in FIG. 12, +9A indicates the parallel magnetic field intensity B / / corresponding to the variation of the current applied to the first coil portion 35b, showing a state where the current is positively fluctuated.

[0095] Note that the parallel magnetic field intensity B / / can be controlled independently of the variation of the B perpendicular zero position B⊥0. Specifically, by changing only the electromagnet current value of the first coil portion 35b in FIG. 6, the parallel magnetic field intensity B / / can be controlled independently of the variation of the B perpendicular zero position B⊥0. Therefore, even when the B perpendicular zero position B⊥0 varies in the Z direction, a state where the parallel magnetic field intensity B / / hardly changes can be maintained.

[0096] Alternatively, in the present embodiment, by changing the current applied to the first coil portion 35b so as to increase negatively, the B perpendicular zero position B⊥0 can be moved toward the inside of the magnet 25 in the Z direction. Thereby, the plasma generation region formed by the magnet 25 can be made in a state of being reduced in the Z direction.

[0097] Furthermore, in this case, the current to the divided portion located in the parallel region near the center of the magnet 25 in the Z direction can be controlled so as not to fluctuate. Thereby, the plasma generation region formed by the magnet 25 can be made in a state of not changing in the X direction as compared with the case where the current to the divided portion located at the Z direction end of the magnet 25 is not fluctuated.

[0098] In the present embodiment, in the magnetic field generated by the magnet 25 as described above, it is possible to set the state of moving the B perpendicular zero position B⊥0 in the Z direction to change corresponding to the arrangement of the magnet 25 in the X direction in the cathode unit 22.

[0099] That is, in the present embodiment, in the cathode unit 22, it is possible to set the magnetic field state generated by the magnet 25 to change corresponding to the position in the X direction with respect to the target 23.

[0100] In the present embodiment, a plurality of magnets 25 are integrally controlled to apply current to form a specific magnetic field pattern.

[0101] Hereinafter, an example of the magnetic field pattern in the sputtering apparatus of the present embodiment will be described.

[0102] FIG. 13 is a schematic diagram showing the B perpendicular zero position in the magnetic field pattern A generated by the magnet of the sputtering apparatus in the present embodiment. FIG. 14 shows an example of the value of the current applied to the magnet in the magnetic field pattern A shown in FIG. 13. First, as the magnetic field pattern A, as shown in FIG. 13, a state where the magnetic fields formed by all the magnets 25 are of the same shape will be described.

[0103] Power supply is performed on a plurality of (here, nine) magnets 25 arranged in the X direction under the same conditions. Here, as shown in FIG. 14, the current applied to the first coil portions 35b in the plurality of magnets 25 is set to 0 A.

[0104] In this case, the magnetic field profiles generated by the magnets 25 as the multi-connected magnets formed by a plurality of (nine) magnets are all the same regardless of the X-direction positions of the magnets 25. Therefore, as shown in FIG. 13, the magnetic fields formed by all the magnets 25 are of the same shape. That the magnetic fields formed by all the magnets 25 are of the same shape means the following state.

[0105] In the magnetic fields formed by all the magnets 25, the line connecting the B perpendicular zero positions B⊥0 is substantially the same as the contour of the magnet 25 and slightly smaller than the contour of the magnet 25 when viewed in the Y direction. In the magnetic fields formed by all the magnets 25, the lengths in the Z direction of the lines connecting the B-perpendicular zero positions B⊥0 are all of the same dimension. In the magnetic fields formed by all the magnets 25, the lengths in the X direction of the lines connecting the B-perpendicular zero positions B⊥0 are all of the same dimension in the parallel region. This is defined as magnetic field pattern A.

[0106] FIG. 15 is a schematic diagram showing the B-perpendicular zero position in magnetic field pattern B generated by the magnets in the sputtering apparatus according to the present embodiment. FIG. 16 shows an example of the value of the current applied to the magnets in magnetic field pattern B shown in FIG. 15. Next, as magnetic field pattern B, as shown in FIG. 15, a state in which the magnetic fields formed are made different corresponding to the X-direction positions of the magnets 25 will be described.

[0107] Power is supplied to a plurality (here, nine) of the magnets 25 under different conditions depending on the arrangement in the X direction. For example, power is supplied to four magnets 25, two at each end in the X direction, and five magnets 25 at the central position in the X direction under different conditions.

[0108] Here, the power supply under different conditions in the X direction is the power supply condition for the first coil portion 35b in a plurality of magnets 25 in the X direction. That is, as shown in FIG. 16, in four magnets 25, two at each end in the X direction, the current applied to the first coil portion 35b is set to +9 A. At the same time, as shown in FIG. 16, in five magnets 25 at the central position in the X direction, the current applied to the first coil portion 35b is set to -9 A.

[0109] In this case, the magnetic field profiles generated by the multi-connected magnet 25 formed by multiple (nine) magnets differ depending on the X-direction positions of the magnet 25 at both end positions and the central position in the X direction. Therefore, as shown in FIG. 15, the magnetic field region formed at both end positions in the X direction is wider in the Z direction than the magnetic field region formed at the central position in the X direction. The fact that the magnetic field region formed at both end positions rather than the central position in the X direction is wider in the Z direction means the following state.

[0110] In the magnetic field formed by four magnets 25, two at each of the both ends in the X direction, the line connecting the B-vertical zero positions B⊥0 extends outward in the Z direction compared to the contour of the magnetic field pattern A when viewed in the Y direction. In the magnetic field formed by four magnets 25, two at each of the both ends in the X direction, the line connecting the B-vertical zero positions B⊥0 has substantially the same dimension as the contour of the magnetic field pattern A in the X direction when viewed in the Y direction.

[0111] In the magnetic field formed by five magnets 25 at the central position in the X direction, the line connecting the B-vertical zero positions B⊥0 shrinks inward of the contour of the magnet 25 in the Z direction compared to the contour of the magnetic field pattern A when viewed in the Y direction. In the magnetic field formed by five magnets 25 at the central position in the X direction, the line connecting the B-vertical zero positions B⊥0 has substantially the same dimension as the contour of the magnetic field pattern A in the X direction when viewed in the Y direction.

[0112] Thus, in the magnetic field formed by the multi-connected magnet composed of multiple magnets 25, the length of the line connecting the B-vertical zero positions B⊥0 in the Z direction is smaller at the central position in the X direction and extends in the Z direction at both end positions. Note that in the magnetic field formed by all the magnets 25, the length of the line connecting the B-vertical zero positions B⊥0 in the X direction is substantially the same as the contour of the magnetic field pattern A in any of the parallel regions. This is defined as the magnetic field pattern B.

[0113] The difference in film formation characteristics due to the above-described magnetic field pattern A and magnetic field pattern B will be described.

[0114] FIG. 17 is a schematic diagram showing the swinging positions of magnets when verifying the magnetic field pattern generated by the magnets in the sputtering apparatus according to the present embodiment. FIG. 18 is a graph showing the sheet resistance distribution in the X direction in the films formed as the magnetic field pattern A and the magnetic field pattern B. Here, in FIG. 17, the magnets 25 were numbered 1 to 9 from left to right in the figure.

[0115] Here, a plurality of magnets 25 that are multi-connected magnets were stopped at the swinging ends in the X direction to verify the film formation characteristics. Specifically, with the magnets 25 stopped at the central position center, the end position Forward, and the end position Revers, the sheet resistance distributions in the patterns formed without supplying power to the first coil portion 35b were averaged, and this is shown in FIG. 18 as the magnetic field pattern A. Further, when forming a film at the same positions as the magnetic field pattern A, the sheet resistance distributions in the patterns formed by supplying power to the first coil portion 35b and changing it were averaged, and this is shown in FIG. 18 as the magnetic field pattern B.

[0116] As shown in FIG. 18, in the magnetic field pattern B in which the B perpendicular zero position B⊥0 is changed so as to extend in the Z direction compared to the magnetic field pattern A, in the portions of the substrate corresponding to the magnets 25 numbered 1, 2, 8, and 9 shown in FIG. 17, the parallel magnetic field strength B / / is slightly stronger, but the sheet resistance has increased. Also, as shown in FIG. 18, in the magnetic field pattern B in which the B perpendicular zero position B⊥0 is changed so as to shrink in the Z direction compared to the magnetic field pattern A, in the portions of the substrate corresponding to the magnets 25 numbered 3 to 7 shown in FIG. 17, the sheet resistance has slightly decreased.

[0117] In this way, by changing the B perpendicular zero position B⊥0 where the magnetic field component is 0 (B⊥0) without depending only on the magnetic field strength, film formation characteristics such as sheet resistance can be controlled.

[0118] Hereinafter, an example of a method for switching a magnetic field pattern in the sputtering apparatus of the present embodiment will be described.

[0119] FIG. 19 is a schematic diagram showing the relationship between the swinging position of the magnet and the magnetic field pattern generated by the magnet in the sputtering apparatus of the present embodiment. FIG. 20 is a schematic diagram showing the relationship between the swinging position of the magnet and the magnetic field pattern generated by the magnet in the sputtering apparatus of the present embodiment. FIG. 21 is a schematic diagram showing the relationship between the swinging position of the magnet and the magnetic field pattern generated by the magnet in the sputtering apparatus of the present embodiment. FIG. 22 is a schematic diagram showing the relationship between the swinging position of the magnet and the magnetic field pattern generated by the magnet in the sputtering apparatus of the present embodiment. In the sputtering apparatus 1 of the present embodiment, during film formation, a multi-pole magnet composed of a plurality of magnets 25 is swung in the swinging direction.

[0120] At the same time, in the sputtering apparatus 1 of the present embodiment, the magnetic field pattern to be generated is switched according to the swinging position of the multi-pole magnet composed of a plurality of magnets 25. Specifically, switching points SwP are set at positions close to both ends in the swinging direction of the magnet 25. When the end portion in the X direction of the multi-pole magnet composed of a plurality of magnets 25 passes through the switching point SwP and the end portion in the X direction of the multi-pole magnet approaches the end portion of the swinging width R-F rather than the switching point SwP, the magnetic field pattern formed by the magnet 25 is switched.

[0121] As shown in FIGS. 19 to 22, the switching points SwP are set at positions closer to the swinging end position Revers than the central position center and at positions closer to the swinging end position Forward than the central position center in the swinging width R-F which is the region where the magnet 25 swings, respectively. The distance from the switching point SwP to the rocking end position Revers and the distance from the switching point SwP to the rocking end position Forward are both set to be equal.

[0122] Also, the distance from the switching point SwP to the rocking end position Revers and the distance from the switching point SwP to the rocking end position Forward can be set for each film deposition according to the configuration, characteristics, film deposition conditions, etc. of the sputtering apparatus 1. In particular, the distance can be set according to the distance between the magnet 25 and the ground.

[0123] Here, in the rocking width R - F, a region reB from the switching point SwP to the rocking end position Revers, a region reA including the central position center and sandwiched by the switching point SwP, and a region reB from the switching point SwP to the rocking end position Forward are set.

[0124] First, the rocking of the magnet will be described. When discharging sputtered particles to form a film, in the sputtering apparatus 1 of the present embodiment, as shown in FIG. 10, a multi - magnet composed of a plurality of magnets 25 is moved by the magnet scanning unit 29 from the central position center to the rocking end position Forward to the right in the figure, then from the rocking end position Forward to the left via the central position center to the rocking end position Revers, and further from the rocking end position Revers to the central position center, and one scan is completed. The scan is repeated a plurality of times according to the film deposition time and film deposition thickness. At this time, the current supplied to the magnet 25 by the control unit 26 is changed corresponding to the switching point SwP.

[0125] First, consider the case where a multi - magnet composed of a plurality of magnets 25 is at the central position center as shown in FIG. 19. Here, the total length of the multi - magnet composed of a plurality of magnets 25 in the X - direction is within the range of the region reA. In this case, as shown in FIG. 14, the values of the currents applied to the respective magnets 25 are set to be equal, and as shown in FIG. 13, the magnetic field pattern generated by the multi-connected magnets composed of a plurality of magnets 25 is set to be the magnetic field pattern A.

[0126] Next, consider the case where the multi-connected magnets composed of a plurality of magnets 25 move rightward and reach the swing end position Forward as shown in FIG. 20. Here, when the front end (right end) of the multi-connected magnets composed of a plurality of magnets 25 moving in the right direction of the figure passes through the switching point SwP and the front end (right end) of the multi-connected magnets enters the region reB, the magnetic field pattern formed by the magnets 25 is switched.

[0127] In this case, as shown in FIG. 16, the values of the currents applied to the respective magnets 25 are set to be different in the X direction, and as shown in FIG. 14, the magnetic field pattern generated by the multi-connected magnets composed of a plurality of magnets 25 is switched from the magnetic field pattern A to the magnetic field pattern B. That is, the switching point SwP is set as the magnetic field pattern switching position.

[0128] Here, when the front end (right end) of the multi-connected magnets is in the region reB, the magnetic field pattern B is maintained. That is, the magnetic field pattern B is maintained while the front end (right end) of the multi-connected magnets composed of a plurality of magnets 25 moving in the right direction of the figure moves rightward from passing through the switching point SwP until it reaches the swing end position Forward.

[0129] In addition to this, the magnetic field pattern B is maintained until the right end of the multi-connected magnets composed of a plurality of magnets 25 starts to move leftward from the swing end position Forward and until the rear end (right end) of the multi-connected magnets composed of a plurality of magnets 25 moving in the left direction of the figure reaches the switching point SwP.

[0130] Furthermore, when the rear end (right end) of the multi-connected magnet moving leftward enters the region reA after passing through the switching point SwP, the magnetic field pattern formed by the magnet 25 is switched from the magnetic field pattern B to the magnetic field pattern A.

[0131] Next, consider the case where the multi-connected magnet composed of a plurality of magnets 25 moves leftward and reaches the swing end position Revers as shown in FIG. 21. Here, when the entire X direction of the multi-connected magnet composed of a plurality of magnets 25 moving leftward in the figure is within the region reA, the magnetic field pattern A is maintained. In this case, as shown in FIG. 14, the value of the current applied to each magnet 25 is set to be equal, and as shown in FIG. 13, the magnetic field pattern generated by the multi-connected magnet composed of a plurality of magnets 25 is set to the magnetic field pattern A.

[0132] Next, consider the case where the multi-connected magnet composed of a plurality of magnets 25 moves leftward and reaches the swing end position Revaers as shown in FIG. 22. Here, when the front end (left end) of the multi-connected magnet composed of a plurality of magnets 25 moving leftward in the figure passes through the switching point SwP and the front end (left end) of the multi-connected magnet enters the region reB, the magnetic field pattern formed by the magnet 25 is switched.

[0133] In this case, as shown in FIG. 16, the value of the current applied to each magnet 25 is set to be different in the X direction, and as shown in FIG. 14, the magnetic field pattern generated by the multi-connected magnet composed of a plurality of magnets 25 is switched from the magnetic field pattern A to the magnetic field pattern B. That is, the switching point SwP is set as the magnetic field pattern switching position.

[0134] Here, when the front end (left end) of the multi-magnet is in the region reB, the magnetic field pattern B is maintained. That is, the magnetic field pattern B is maintained while the front end (left end) of the multi-magnet composed of a plurality of magnets 25 moving leftward in the figure is moving leftward from passing through the switching point SwP until reaching the swing end position Revers.

[0135] In addition to this, when the left end of the multi-magnet composed of a plurality of magnets 25 starts to move rightward from the swing end position Revers, and further, until the rear end (left end) of the multi-magnet composed of a plurality of magnets 25 moving rightward in the figure reaches the switching point SwP, the magnetic field pattern B is maintained.

[0136] Furthermore, when the rear end (left end) of the multi-magnet moving rightward passes through the switching point SwP and enters the region reA, the magnetic field pattern formed by the magnet 25 is switched from the magnetic field pattern B to the magnetic field pattern A.

[0137] And the multi-magnet composed of a plurality of magnets 25 maintains the magnetic field pattern A until it returns to the central position center as shown in FIG. 19. Furthermore, the multi-magnet composed of a plurality of magnets 25 is moved to the central position center, and one scan is completed. This one scan is repeated a plurality of times to perform film formation. During that time, as described above, the current supplied to the magnet 25 by the control unit 26 can be changed corresponding to the switching point SwP.

[0138] In this embodiment, as the magnet swing recipe, the region reB is set to be approximately equal to the X-direction dimension of one magnet 25. In this embodiment, as the magnet swing recipe, the region reB may be set to be larger than the X-direction dimension of one magnet 25.

[0139] FIG. 23 is a schematic diagram showing another example of the relationship between the rocking position of the magnet and the magnetic field pattern generated by the magnet in the sputtering apparatus of the present embodiment. Also, as a magnet rocking recipe, the region reB may be set to be smaller than the X-direction dimension of one magnet 25, as shown in FIG. 23. Alternatively, as a magnet rocking recipe, the region reB may be set to be approximately equal to the X-direction dimension of two magnets 25.

[0140] Also, as a magnet rocking recipe, the ratio reB / reA of the X-direction dimension of the region reB to the X-direction dimension of the region reA, or the ratio reB / R-F of the X-direction dimension of the region reB to the X-direction dimension of the rocking width R-F can be appropriately set.

[0141] Hereinafter, as a magnet rocking recipe, the film formation characteristics when the ratio reB / R-F is changed will be examined.

[0142] FIG. 24 is a graph showing the sheet resistance distribution in the X direction in the films formed as the magnet rocking recipe A and the magnet rocking recipe B in the sputtering apparatus of the present embodiment. As a magnet rocking recipe, it was set as follows.

[0143] Magnet rocking recipe A Region reA; 65%, Region reB; 35% Magnet rocking recipe B Region reA; 92%, Region reB; 8%

[0144] Here, as described above, the corresponding film formation characteristics were verified by different magnet rocking recipes. Specifically, the rocking of the magnet 25 was used as the magnet rocking recipe A to form an aluminum film. Further, the X-direction width of the region reB was changed to form the magnet rocking recipe B.

[0145] As shown in FIG. 24, in the magnet oscillation recipe B in which the region reB is changed to be reduced in the X direction compared to the magnet oscillation recipe A, the sheet resistance decreased at the central position in the X direction. Also, as shown in FIG. 24, in the magnet oscillation recipe B in which the region reB is changed to be reduced in the X direction compared to the magnet oscillation recipe A, the reduction width of the sheet resistance became larger at the X central position compared to the end position of the oscillation position in the X direction.

[0146] In this way, without depending on the magnetic field pattern itself, by simply changing the magnet oscillation recipe which is the setting position of the switching point SwP, film formation characteristics such as sheet resistance can be controlled.

[0147] Next, in the sputtering apparatus 1 according to the present embodiment, film formation on the glass substrate 11 will be described.

[0148] First, the glass substrate 11 carried into the sputtering apparatus 1 from the outside is first placed on the positioning member in the load / unload chamber 2, and the glass substrate 11 is aligned so as to be disposed at a predetermined position on the positioning member (see FIG. 1).

[0149] Next, the glass substrate 11 placed on the positioning member in the load / unload chamber 2 is supported by the robot hand of the transfer device 3a (transfer robot) and taken out from the load / unload chamber 2. Then, the glass substrate 11 is transferred to the film formation chamber 4 via the transfer chamber 3.

[0150] At this time, in the film formation chamber 4, the substrate holding portion 13 is arranged at the horizontal placement position with the oscillation axis rotated by the drive portion. Further, by a lift pin moving portion (not shown), the lift pin is arranged at a preparation position protruding upward from the substrate holding portion 13. In this state, the glass substrate 11 that has reached the film formation chamber 4 is inserted above the substrate holding portion 13 by the transfer device 3a (transfer robot).

[0151] Next, as the robot hand of the transfer device 3a (transfer robot) approaches the substrate holding part 13 and the glass substrate 11 is aligned at a position within a predetermined plane of the substrate holding part 13, the glass substrate 11 is placed on the lift pins. Then, the arm of the transfer robot 3a retracts into the transfer chamber 3. Then, the lift pins descend, and the glass substrate 11 is supported on the substrate holding part 13.

[0152] Next, by rotating the swing axis, with the glass substrate 11 held by the substrate holding part 13, the glass substrate 11 rises so as to reach the vertical processing position. As a result, the film formation port 4b is substantially blocked by the glass substrate 11, and the glass substrate 11 is held at the film formation position.

[0153] When the film formation process is completed, by rotating the swing axis, with the glass substrate 11 held by the substrate holding part 13, the glass substrate 11 reaches the horizontal placement position. The glass substrate 11 on which the film formation process has been completed is taken out of the film formation chamber 4 by the transfer device 3a (transfer robot). Then, the glass substrate 11 is taken out from the load / unload chamber 2 via the transfer chamber 3.

[0154] As described above, in the sputtering apparatus and the sputtering method according to the present embodiment, the B-vertical zero position B⊥0 can be changed by setting the current applied to the magnet 25. By changing the B-vertical zero position B⊥0, the magnetic field pattern generated by the magnet 25 can be set. Further, the magnetic field pattern generated by the magnet 25 can be switched according to the swing position of the magnet 25. Also, a switching point SwP for switching the magnetic field pattern according to the swing position of the magnet 25 can be set, and a magnet swing recipe can be set. Thereby, it is possible to improve and further enhance the film characteristics of the formed film, particularly the states such as sheet resistance, film thickness, and film stress.

[0155] Furthermore, in the present embodiment, it is possible to achieve the effects of improving the usage efficiency of the target material and facilitating the reduction of non-erosion parts (Non-Erosion parts).

[0156] Note that in the present embodiment, the applied current setting, the state setting of the B perpendicular zero position B⊥0, the setting of the horizontal magnetic field strength B / / , the magnetic field pattern setting, the switching point SwP setting, and the magnet oscillation recipe setting are not limited to the above-described values and the like, and can be appropriately set according to desired film characteristics, film composition, film formation conditions, apparatus characteristics, and the like.

[0157] In addition, film formation can be appropriately performed by combining the configurations in the present embodiment or using only a part thereof.

[0158] Hereinafter, a second embodiment of the sputtering apparatus and the sputtering method according to the present invention will be described with reference to the drawings.

[0159] FIG. 25 is a front view showing the positional relationship among the glass substrate, the target, and the magnet in the sputtering apparatus of the present embodiment. In the present embodiment, what is different from the above-described first embodiment is the number of magnets, and the same reference numerals are given to the corresponding configurations as those in the above-described first embodiment, and the description thereof will be omitted.

[0160] In the sputtering apparatus 1 of the present embodiment, the target 23 is arranged in a flat plate shape along the ZX plane facing the glass substrate 11. As shown in FIG. 25, the target 23 has a width longer than that of the glass substrate 11 in the Z direction. Further, the target 23 has a width larger than that of the glass substrate 11 in the X direction, which is the oscillation direction.

[0161] The backing plate 24 is formed in a flat plate shape along the ZX plane facing the glass substrate 11 and is joined to the surface of the target 23 that does not face the glass substrate 11.

[0162] The cathode unit 22 has a target 23 arranged along the ZX plane facing the film-forming surface 11a of the glass substrate 11. One magnet 25 is provided on the back side of the target 23 (the backing plate 24 side) of the cathode unit 22.

[0163] One magnet 25 is erected as a single magnet such that its longitudinal direction is the Z direction.

[0164] In the cathode unit 22 of the present embodiment, the target 23 is fixed with respect to the glass substrate 11 and is configured to be fixed in the film-forming chamber (chamber) 4.

[0165] One magnet (magnetic circuit) 25 forms a magnetron magnetic field on the surface 23a of the target 23 facing the glass substrate 11. The magnet 25 is connected to the control unit 26 and the generated magnetic field state can be controlled.

[0166] The magnet 25 has a yoke 31, a peripheral magnet portion 32, and a central magnet portion 33, similar to the first embodiment shown in FIGS. 5 to 8. The central magnet portion 33 and the peripheral magnet portion 32 constitute a magnetic circuit.

[0167] The central magnet portion 33 and the peripheral magnet portion 32 have a parallel region that is parallel to each other at the central portion in the Z direction, which is the longitudinal direction of the magnet 25. Both the central magnet portion 33 and the peripheral magnet portion 32 are divided in the extending direction. Both the central magnet portion 33 and the peripheral magnet portion 32 are formed by continuously arranging the divided individual magnets.

[0168] The central magnet portion 33 has an end coil portion 32a, a first coil portion 35b, a second coil portion 35c, a third coil portion 35d, and a fourth coil portion 35e, and these can be independently supplied with current to generate different magnetic fields. The central magnet portion 33 has a fifth magnet portion 37 and a split portion that further extends in the Z direction from the fifth magnet portion 37, and these are permanent magnets.

[0169] In the peripheral magnet portion 32, the end magnet portion 32a is a permanent magnet. In the central magnet portion 33, in the first coil portion 35b to the fifth coil portion 35e, currents are independently supplied respectively, and it is possible to adjust the magnetic field strength and the distribution of the generated magnetic field in the magnetic circuit composed of the core portion 36 and the peripheral magnet portion 32.

[0170] Similar to the first embodiment, the cathode device 10 includes a magnet scanning unit 29 that moves the magnet 25 along the swinging direction which is one of the scanning directions. The swinging direction is the X direction orthogonal to the Z direction in which a plurality of magnets 25 are erected. The magnet scanning unit 29 changes the position of the magnet 25 with respect to the target 23. The magnet scanning unit 29 can swing without changing the posture of one magnet 25 with respect to the target 23. That is, one magnet 25 can be moved (swung) parallel to the particle emission surface of the target 23 by the magnet scanning unit 29 while maintaining the posture of extending in the Z direction and facing the target 23.

[0171] The magnet scanning unit 29 is composed of, for example, a rail extending along the scanning direction, rollers attached to each of the two ends in the X direction of the cathode unit 22, and a plurality of motors for rotating each roller, etc.

[0172] The rail of the magnet scanning unit 29 has a width that is about the same as or longer than the target 23 in the scanning direction (X direction). Note that the magnet scanning unit 29 may be embodied in other configurations as long as it is possible to move a plurality of magnets 25 integrally along the scanning direction.

[0173] In the cathode unit 22, similar to the first embodiment shown in FIG. 10, one magnet 25 is moved by the magnet scanning unit 29 from the central position center to the swing end position Forward to the right in the figure, further from the swing end position Forward to the swing end position Revers to the left via the central position center, and further from the swing end position Revers to the central position center, and one scan is completed. In the cathode unit 22, this scan is repeated a plurality of times in the same manner as in the first embodiment shown in FIG. 10.

[0174] At the same time, in the magnet 25, the current applied to the divided portion at the end in the Z direction from the control unit 26 as a power source is changed to change the magnetic field profile formed by the magnet 25. Specifically, by applying the applied current, the B perpendicular zero position B⊥0 where the magnetic field component along the Y direction (normal direction) in the magnetron magnetic field formed by the magnet 25 is 0 (B⊥0) is changed.

[0175] The current to the divided portion located at the Z-direction end of the magnet 25 is controlled to vary the B perpendicular zero position B⊥0 in the Z direction. At this time, the B parallel intensity, which is the magnetic field component (B / / ) in the direction along the ZX plane in the magnetron magnetic field formed by the magnet 25, can be made to hardly change.

[0176] Here, an example of the magnetic field profile that becomes the magnetic field pattern formed by the magnet in the present embodiment will be described.

[0177] In the cathode unit 22 in the present embodiment, since there is one magnet 25, setting the magnetic field profile directly becomes setting the magnetic field pattern.

[0178] In the present embodiment, three types of magnetic field patterns are exemplified as the magnetic field pattern 2A, the magnetic field pattern 2B, and the magnetic field pattern 2C. FIG. 26 is a schematic diagram showing the B perpendicular zero position B⊥0 in the magnetic field pattern 2A generated by the magnet of the sputtering apparatus in the present embodiment. FIG. 27 is a schematic diagram showing the B perpendicular zero position B⊥0 in the magnetic field pattern 2B generated by the magnet of the sputtering apparatus in the present embodiment. FIG. 28 is a schematic diagram showing the B perpendicular zero position B⊥0 in the magnetic field pattern 2C generated by the magnet of the sputtering apparatus in the present embodiment.

[0179] As shown in FIG. 26, in the magnetic field pattern 2A in the present embodiment, in the magnetic field formed by the magnet 25, the line connecting the B perpendicular zero positions B⊥0 is substantially the same as the contour of the magnet 25 when viewed in the Y direction, and is slightly smaller than the contour of the magnet 25.

[0180] This may be set to the same state as the magnetic field profile in one magnet 25 in the magnetic field pattern A in the first embodiment shown in FIG. 13. Also, the current value supplied to the magnet 25 may be set in the same manner as the magnetic field pattern A in the first embodiment.

[0181] Furthermore, the B parallel intensity, which is the magnetic field component (B / / ) in the direction along the ZX plane of the magnetron magnetic field formed by the magnet 25, may be set in the same manner as the magnetic field pattern A in the first embodiment.

[0182] As shown in FIG. 27, in the magnetic field pattern 2B in the present embodiment, in the magnetic field formed by the magnet 25, the line connecting the B perpendicular zero positions B⊥0 extends outward in the Z direction at the Z direction end of the magnet 25 when viewed in the Y direction, as compared with the magnetic field pattern 2A.

[0183] In the magnetic field pattern 2B in the present embodiment, the line connecting the B perpendicular zero positions B⊥0 has substantially the same dimensions as the contour of the magnetic field pattern 2A in the X direction when viewed in the Y direction.

[0184] Here, it may be set to the same state as the magnetic field profiles of the four magnets 25, two at each of the two ends in the X direction in the magnetic field pattern B in the first embodiment shown in FIG. 15. Also, the current value supplied to the magnet 25 may be set in the same manner as the magnetic field profiles of the four magnets 25, two at each of the two ends in the X direction in the magnetic field pattern B in the first embodiment.

[0185] Furthermore, regarding the B parallel intensity, which is the magnetic field component (B / / ) in the direction along the ZX plane of the magnetron magnetic field formed by the magnet 25, it may be set in the same manner as the magnetic field profiles of the four magnets 25, two at each of the two ends in the X direction in the magnetic field pattern B in the first embodiment.

[0186] As shown in FIG. 28, in the magnetic field pattern 2C in the present embodiment, in the magnetic field formed by the magnet 25, the line connecting the B perpendicular zero positions B⊥0 is reduced inward in the Z direction at the Z-direction end of the magnet 25 as viewed in the Y direction compared to the magnetic field pattern 2A.

[0187] In the magnetic field pattern 2B in the present embodiment, the line connecting the B perpendicular zero positions B⊥0 has substantially the same dimensions as the contour of the magnetic field pattern 2A in the X direction as viewed in the Y direction.

[0188] Here, it may be set to the same state as the magnetic field profiles of the five magnets 25 at the central position in the X direction in the magnetic field pattern B in the first embodiment shown in FIG. 15. Also, the current value supplied to the magnet 25 may be set in the same manner as the magnetic field profiles of the five magnets 25 at the central position in the X direction in the magnetic field pattern B in the first embodiment.

[0189] Furthermore, regarding the B parallel intensity, which is the magnetic field component (B / / ) in the direction along the ZX plane of the magnetron magnetic field formed by the magnet 25, it may be set in the same manner as the magnetic field profiles of the five magnets 25 at the central position in the X direction in the magnetic field pattern B in the first embodiment.

[0190] Hereinafter, an example of a method for switching a magnetic field pattern in the sputtering apparatus of the present embodiment will be described.

[0191] FIG. 29 is a schematic diagram showing the relationship between the swinging position of the magnet and the magnetic field pattern generated by the magnet in the sputtering apparatus of the present embodiment. FIG. 30 is a schematic diagram showing the relationship between the swinging position of the magnet and the magnetic field pattern generated by the magnet in the sputtering apparatus of the present embodiment. FIG. 31 is a schematic diagram showing the relationship between the swinging position of the magnet and the magnetic field pattern generated by the magnet in the sputtering apparatus of the present embodiment. In the sputtering apparatus 1 of the present embodiment, during film formation, one magnet 25 is swung in the swinging direction (X direction).

[0192] At the same time, in the sputtering apparatus 1 of the present embodiment, the magnetic field pattern to be generated is switched according to the swinging position of one magnet 25. Specifically, in the swinging direction (X direction) of the magnet 25, a plurality of switching points SwP1 and a switching point SwP2 are set.

[0193] Here, the switching point SwP1 is set at a position close to both ends of the swinging width R-F of the magnet 25. Also, the switching point SwP2 is set at a position close to the center of the swinging width R-F of the magnet 25, respectively. When the end portion in the traveling direction of one magnet 25 passes through these switching points SwP1 and the switching point SwP2, the magnetic field pattern formed by the magnet 25 is switched.

[0194] As shown in FIGS. 29 to 31, the switching point SwP has a switching point SwP2 set at a position closer to the rocking end position Revers than the central position center, which is the center of the rocking width R-F, which is the area where the magnet 25 rocks. Similarly, in the rocking width R-F, a switching point SwP1 is set at a position closer to the rocking end position Revers than the switching point SwP2.

[0195] Also, in the rocking width R-F, a switching point SwP2 is set at a position closer to the rocking end position Forward than the central position center, which is the center of the rocking width R-F. Similarly, in the rocking width R-F, a switching point SwP1 is set at a position closer to the rocking end position Forward than the switching point SwP2.

[0196] Here, the switching point SwP1 and the switching point SwP2 are arranged symmetrically with respect to the central position center in the rocking width R-F. The distance from the switching point SwP2 to the rocking end position Revers and the distance from the switching point SwP2 to the rocking end position Forward are both set to be equal.

[0197] Similarly, the distance from the switching point SwP1 to the rocking end position Revers and the distance from the switching point SwP1 to the rocking end position Forward are both set to be equal.

[0198] Here, in the rocking width R-F, an area re2B from the rocking end position Revers to the switching point SwP1, an area re2C from the switching point SwP1 to the switching point SwP2, an area re2A including the central position center and sandwiched by the switching point SwP2, an area re2C from the switching point SwP2 to the switching point SwP1, and an area re2B from the switching point SwP1 to the rocking end position Forward are set.

[0199] In addition, the distances in the X direction in regions re2A, re2B, and re2C set by switching point SwP1, switching point SwP2, rocking end position Revers, and rocking end position Forward can be set for each film formation according to the configuration, characteristics, film formation conditions, etc. of the sputtering apparatus 1. In particular, the distance can be set according to the distance between the magnet 25 and the ground.

[0200] First, the rocking of the magnet will be described. When sputtering particles are emitted to form a film, in the sputtering apparatus 1 of the present embodiment, as shown in FIG. 10, one magnet 25 is moved by the magnet scanning unit 29 from the central position center to the rocking end position Forward to the right in the figure, and further from the rocking end position Forward to the rocking end position Revers to the left via the central position center, and further from the rocking end position Revers to the central position center. When one scan is completed. The scan is repeated a plurality of times according to the film formation time and film formation thickness. At that time, the current supplied to the magnet 25 is changed corresponding to the switching point SwP1 and the switching point SwP2 by the control unit 26.

[0201] First, consider the case where one magnet 25 is at the central position center as shown in FIG. 29. Here, one magnet 25 is within the range of region re2A in the X direction. In this case, the value of the current applied to the magnet 25 is set, and as shown in FIG. 26, the magnetic field pattern generated by one magnet 25 maintains the magnetic field pattern 2A.

[0202] Next, consider the case where one magnet 25 moves to the right and reaches the switching point SwP2 as shown in FIG. 30. Here, when the front end (right end) of one magnet 25 moving in the right direction of the figure passes through the switching point SwP2 and the front end (right end) of the magnet 25 enters the region re2C, the magnetic field pattern formed by the magnet 25 is switched.

[0203] In this case, the value of the current applied to the magnet 25 is set, and as shown in FIG. 28, the magnetic field pattern generated by one magnet 25 is switched from the magnetic field pattern 2A to the magnetic field pattern 2C. That is, the switching point SwP2 is set as the magnetic field pattern switching position for switching between the magnetic field pattern 2A and the magnetic field pattern 2C.

[0204] Here, when the front end (right end) of the magnet 25 is in the region re2C, the magnetic field pattern 2C is maintained. That is, the magnetic field pattern 2C is maintained while the front end (right end) of one magnet 25 moving in the right direction of the figure moves rightward from passing through the switching point SwP2 until reaching the switching point SwP1.

[0205] Next, consider the case where one magnet 25 moves further rightward and reaches the swing end position Forward as shown in FIG. 31. Here, when the front end (right end) of one magnet 25 moving in the right direction of the figure passes through the switching point SwP1 and the front end (right end) of the magnet 25 enters the region re2B, the magnetic field pattern formed by the magnet 25 is switched.

[0206] In this case, the value of the current applied to the magnet 25 is set, and as shown in FIG. 27, the magnetic field pattern generated by one magnet 25 is switched from the magnetic field pattern 2C to the magnetic field pattern 2B. That is, the switching point SwP1 is set as the magnetic field pattern switching position for switching between the magnetic field pattern 2C and the magnetic field pattern 2B.

[0207] Here, when the front end (right end) of the magnet 25 is in the region re2B, the magnetic field pattern 2B is maintained. That is, the magnetic field pattern 2B is maintained while the front end (right end) of one magnet 25 moving in the right direction of the figure moves rightward from passing through the switching point SwP1 until reaching the swing end position Forward.

[0208] In addition to this, the magnetic field pattern 2B is maintained until the right end of one magnet 25 starts to move leftward from the swing end position Forward and until the rear end (right end) of one magnet 25 moving in the left direction of the figure reaches the switching point SwP1.

[0209] Furthermore, when the rear end (right end) of the magnet 25 moving leftward passes through the switching point SwP1 and enters the region re2C, the magnetic field pattern formed by the magnet 25 is switched from the magnetic field pattern 2C to the magnetic field pattern 2A.

[0210] Next, consider the case where one magnet 25 further moves leftward and reaches the switching point SwP2 from near the center position center. Here, when the magnet 25 moving in the left direction of the figure is within the region re2A, the magnetic field pattern 2A is maintained.

[0211] Here, when the front end (left end) of one magnet 25 moving in the left direction of the figure passes through the switching point SwP2 and the front end (left end) of the magnet 25 enters the region re2C, the magnetic field pattern formed by the magnet 25 is switched to the magnetic field pattern 2C.

[0212] Here, while one magnet 25 further moves leftward, if the front end (left end) of the magnet 25 is in the region re2C, the magnetic field pattern 2C is maintained. That is, the magnetic field pattern 2C is maintained while the front end (left end) of the one magnet 25 moving leftward in the figure moves leftward from passing through the switching point SwP2 until reaching the switching point SwP1.

[0213] Next, consider the case where one magnet 25 further moves leftward and reaches the switching point SwP1 from near the switching point SwP2. Here, if the magnet 25 moving leftward in the figure is within the region re2C, the magnetic field pattern 2C is maintained.

[0214] Here, when the front end (left end) of the one magnet 25 moving leftward in the figure passes through the switching point SwP1 and the front end (left end) of the magnet 25 enters the region re2B, the magnetic field pattern formed by the magnet 25 is switched to the magnetic field pattern 2B.

[0215] Furthermore, if the front end (left end) of the magnet 25 is in the region re2B, the magnetic field pattern 2B is maintained. That is, the magnetic field pattern 2B is maintained while the front end (left end) of the one magnet 25 moving leftward in the figure moves leftward from passing through the switching point SwP1 until reaching the rocking end position Revaers.

[0216] In addition to this, the magnetic field pattern 2B is maintained until the left end of the one magnet 25 starts moving rightward from the rocking end position Revers and the rear end (left end) of the multi - magnet composed of a plurality of magnets 25 moving rightward in the figure reaches the switching point SwP1.

[0217] Furthermore, when the rear end (left end) of the multi-connected magnet moving rightward passes through the switching point SwP1 and enters the region re2C, the magnetic field pattern formed by the magnet 25 is switched from the magnetic field pattern 2B to the magnetic field pattern 2C. Here, when the magnet 25 moving in the right direction of the figure is within the region re2C, the magnetic field pattern 2C is maintained.

[0218] Furthermore, when the rear end (left end) of the multi-connected magnet moving rightward passes through the switching point SwP2 and enters the region re2A, the magnetic field pattern formed by the magnet 25 is switched from the magnetic field pattern 2C to the magnetic field pattern 2A.

[0219] Then, as shown in FIG. 29, one magnet 25 maintains the magnetic field pattern 2A until it returns to the central position center. Furthermore, one magnet 25 is moved to the central position center, and one scan is completed.

[0220] This one scan is repeated multiple times to perform film formation. During that time, as described above, the current supplied to the magnet 25 by the control unit 26 can be switched corresponding to the switching point SwP1 and the switching point SwP2 to change the magnetic field pattern.

[0221] In this embodiment, as the magnet oscillation recipe, the region re2B may be set to be approximately equal to the X-direction dimension of one magnet 25. In this embodiment, as the magnet oscillation recipe, the region re2B may be set to be larger than the X-direction dimension of one magnet 25. In this embodiment, as the magnet oscillation recipe, the region re2B may be set to be smaller than the X-direction dimension of one magnet 25.

[0222] In this embodiment, as the magnet oscillation recipe, the region re2C may be set to be approximately equal to the X-direction dimension of one magnet 25. In this embodiment, as the magnet oscillation recipe, the region re2C may be set to be larger than the X-direction dimension of one magnet 25. In this embodiment, as the magnet oscillation recipe, the region re2C may be set to be smaller than the X-direction dimension of one magnet 25.

[0223] Thus, as the magnet oscillation recipe, favorable conditions can be set according to film formation characteristics and the like.

[0224] In this embodiment, the same effects as those of the above-described embodiment can be achieved. Furthermore, in this embodiment, effects such as improvement in the usage efficiency of the target material and facilitation of reduction of a non-erosion portion can be achieved.

[0225] Hereinafter, a third embodiment of a sputtering apparatus and a sputtering method according to the present invention will be described with reference to the drawings.

[0226] FIG. 32 is a front view showing the positional relationship among a glass substrate, a target, and a magnet in the sputtering apparatus of this embodiment. FIG. 33 is a cross-sectional view showing the positional relationship among a glass substrate, a target, and a magnet in the sputtering apparatus of this embodiment. FIG. 33 corresponds to FIGS. 7 and 8 in the first embodiment. In this embodiment, the difference from the above-described first and second embodiments lies in the cathode unit, and the same reference numerals are given to the corresponding configurations as those in the above-described first and second embodiments, and the description thereof is omitted.

[0227] In the sputtering apparatus 1 of this embodiment, as shown in FIGS. 32 and 33, a plurality of cathode units 22 are provided. Specifically, as the cathode unit 22, eight cathode units 22 are provided with one magnet 25, one backing plate 24, and one target 23 as a set.

[0228] One magnet 25 has the same configuration as one magnet 25 in the first embodiment shown in FIGS. 6 to 8. In the present embodiment, corresponding to one magnet 25, a divided backing plate 24 and a target 23 are arranged at positions close to the respective glass substrates. In the present embodiment, the magnet 25, the backing plate 24, and the target 23 are configured to be swingable without changing their relative positions to each other.

[0229] These magnet 25, backing plate 24, and target 23 act as one set of cathode units 22. One cathode unit 22 is erected so that its longitudinal direction is the Z direction. The eight cathode units 22 are configured to be swingable integrally, as if the nine magnets 25 in the first embodiment were swung as a multi-pole magnet.

[0230] In one cathode unit 22, a magnetron magnetic field is formed on the surface 23a of the target 23 facing the glass substrate 11 by the magnet 25. In one cathode unit 22, the magnet 25 is connected to the control unit 26 so that the generated magnetic field state can be controlled. The eight cathode units 22 are configured to be able to control the magnetic field states generated by each of them, as if the magnetic field states individually generated by the nine magnets 25 in the first embodiment as a multi-pole magnet could be controlled.

[0231] Similar to one magnet 25 in the first embodiment, one cathode unit 22 can form and control a magnetic field profile including the shape of a line connecting the B-vertical zero position B⊥0 in the magnetic field formed by the magnet 25 in a predetermined state.

[0232] For example, in the magnetic field profile of one cathode unit 22, the line connecting the B-vertical zero position B⊥0 can be made to have a shape that is substantially the same as the contour of the magnet 25 when viewed in the Y direction and is slightly smaller than the contour of the magnet 25, similar to the magnetic field pattern 2A in the second embodiment.

[0233] Alternatively, in the magnetic field profile of one cathode unit 22, the line connecting the B-vertical zero position B⊥0 can be made to extend outward in the Z direction at the Z-direction end of the magnet 25 when viewed in the Y direction, compared to the magnetic field pattern 2A, similar to the magnetic field pattern 2B in the second embodiment.

[0234] Or, in the magnetic field profile of one cathode unit 22, the line connecting the B-vertical zero position B⊥0 can be made to shrink inward in the Z direction at the Z-direction end of the magnet 25 when viewed in the Y direction, compared to the magnetic field pattern 2A, similar to the magnetic field pattern 2C in the second embodiment.

[0235] Furthermore, in the magnetic field profile of one cathode unit 22, the B-parallel intensity, which is the magnetic field component (B / / ) in the direction along the ZX plane of the magnetron magnetic field formed by the magnet 25, may be set in the same manner as the magnetic field profiles of the four magnets 25, two at each of the two ends in the X direction, in the magnetic field pattern B in the first embodiment.

[0236] Furthermore, in the magnetic field profile of one cathode unit 22, the B-parallel intensity, which is the magnetic field component (B / / ) in the direction along the ZX plane of the magnetron magnetic field formed by the magnet 25, may be set in the same manner as the magnetic field profiles of the five magnets 25 at the central position in the X direction in the magnetic field pattern B in the first embodiment.

[0237] Furthermore, similar to the nine magnets 25 in the first embodiment, the plurality of cathode units 22 can control the magnetic field pattern formed by the line connecting the B-vertical zero positions B⊥0 in a predetermined state in the combination of the magnetic field profiles formed by the individual magnets 25.

[0238] For example, as the magnetic field pattern in the plurality of cathode units 22, the magnetic fields formed by all the magnets 25 can be in the same state and shape so as to correspond to the magnetic field pattern A in the first embodiment.

[0239] Alternatively, as the magnetic field pattern in the plurality of cathode units 22, in the magnetic fields formed by two magnets 25 at both ends in the X direction so as to correspond to the magnetic field pattern B in the first embodiment, the line connecting the B-vertical zero positions B⊥0 can be extended outward in the Z direction as compared with the contour of the magnetic field pattern A when viewed in the Y direction. At the same time, in the magnetic fields formed by the six magnets 25 at the central position in the X direction, the line connecting the B-vertical zero positions B⊥0 can be shrunk inside the contour of the magnets 25 in the Z direction as compared with the contour of the magnetic field pattern A when viewed in the Y direction.

[0240] Note that the number of the cathode units 22 that extend and shrink the magnetic field profile in the Z direction can be set as appropriate.

[0241] Furthermore, similar to the nine magnets 25 in the first embodiment, the plurality of cathode units 22 in the present embodiment can switch the magnetic field pattern formed by the line connecting the B-vertical zero positions B⊥0 to a predetermined state according to the swinging positions of the plurality of cathode units 22.

[0242] The method for switching the magnetic field pattern in the sputtering apparatus of the present embodiment can be set at positions closer to the reverse swing end position Revers than the central position center and positions closer to the forward swing end position Forward than the central position center in the swing width R-F, which is the area where the magnet 25 swings, in the same manner as FIGS. 19 to 22 in the first embodiment. The distance from the switching point SwP to the reverse swing end position Revers and the distance from the switching point SwP to the forward swing end position Forward can both be set to be equal.

[0243] In the method for switching the magnetic field pattern in the sputtering apparatus of the present embodiment, in the same manner as FIGS. 19 to 22 in the first embodiment, in the swing width R-F, an area reB from the switching point SwP to the reverse swing end position Revers, an area reA including the central position center and sandwiched by the switching point SwP, and an area reB from the switching point SwP to the forward swing end position Forward can be set.

[0244] In the method for switching the magnetic field pattern in the sputtering apparatus of the present embodiment, in the same manner as the first embodiment, as the cathode unit swing recipe (magnet swing recipe), the area reB can be set to be approximately equal to the X-direction dimension of one cathode unit 22. Furthermore, in the present embodiment, as the cathode unit swing recipe (magnet swing recipe), in the same manner as the first embodiment, the area reB may be set to be larger than the X-direction dimension of one cathode unit 22.

[0245] Thus, as the cathode unit swing recipe (magnet swing recipe), preferable conditions can be set according to film formation characteristics and the like.

[0246] In this embodiment, the same effects as those of the above-described embodiment can be achieved. Further, in this embodiment, effects such as improving the usage efficiency of the target material and facilitating the reduction of non-erosion parts can be achieved.

[0247] In the present invention, it is also possible to combine the configurations described in the above embodiments or use only a part of them. For example, in the first embodiment or the like, the target 23 can be swung in the X direction with respect to the glass substrate 11, and further, the magnet 25 can be swung with respect to the target 23. Alternatively, it can be combined with the change of the swing speed. In this case, for example, a recipe can be exemplified in which the magnet 25 and the target 23 are moved at a slow speed up to a predetermined point SwP, and after passing through the predetermined point SwP, the speed is increased and B⊥0 is also changed.

[0248] In the above embodiments, the formation of a film by moving the B perpendicular zero position B⊥0 has been described. However, the device configuration is not limited to the above configuration, and it is not particularly limited as long as it has such an effect.

[0249] Furthermore, in the above embodiments, the formation of a film by moving the B perpendicular zero position B⊥0 in the Z direction has been described. However, it is also possible to form a film by moving the B perpendicular zero position B⊥0 in the X direction.

Example

[0250] Hereinafter, examples according to the present invention will be described.

[0251] Here, as a specific example of film formation by sputtering in the present invention, a sheet resistance value confirmation test will be described. By changing the B perpendicular zero position B⊥0 at the Z-direction end of the magnet while swinging the cathode unit, the film thickness and the sheet resistance distribution are adjusted.

[0252] <Experimental Example 1> Using the sputtering apparatus shown in the first embodiment, the sheet resistance distribution in the film formed without varying the B perpendicular zero position B⊥0 is shown in FIGS. 34 and 35. Here, FIG. 34 shows the result of film formation performed without swinging the cathode unit with the central position center. FIG. 35 shows the result of film formation performed without swinging the cathode unit with the swing end position Revers or the swing end position Forward.

[0253] Here, the specifications in film formation are shown. Target composition; Aluminum Substrate dimensions; X direction × Z direction; 1500 mm × 1800 mm Film composition; Aluminum Film thickness; 200 nm Supply power (plasma formation power); 80 kW Bias power; Not used Supply gas and gas flow rate; Ar 200 sccm Atmospheric pressure; 0.3 Pa Film formation time; 86 sec

[0254] It can be seen that the sheet resistance distribution is significantly different at the fixed position of the magnet regardless of the magnet position. That is, in the prior art, in a multi-magnet that swings the magnet, such characteristics make it difficult to adjust the sheet resistance distribution.

[0255] <Experimental Example 2> The supply current to the Z-direction end of the magnet was changed to vary the B perpendicular zero position B⊥0. The results are shown in FIG. 11. At the same time, the variation of the parallel magnetic field strength B / / at this time is shown in FIG. 12.

[0256] From the results shown in FIG. 11, it can be seen that by changing 0 A to +9 A, the B perpendicular zero position B⊥0 moves 8 mm in the Z direction. At the same time, from the results shown in Fig. 12, it can be seen that the parallel magnetic field strength B / / varies by only 8 [G], which is much smaller than the change in the B perpendicular zero position B⊥0.

[0257] In the case of a permanent magnet, when the B perpendicular zero position B⊥0 is changed by 8 mm, the parallel magnetic field strength B / / changes by 65 [G]. Therefore, it can be seen that the change in the parallel magnetic field strength B / / is 1 / 8 of that in the conventional case, and the parallel magnetic field strength B / / and the B perpendicular zero position B⊥0 can be controlled individually.

[0258] <Experimental Example 3> In the sputtering apparatus shown in the first embodiment, as shown in Fig. 17, the multi-stage magnet was stopped at the swing end position to verify the film formation characteristics. Specifically, with the magnet stopped at the central position center, the end position Forward, and the end position Revers, the pattern formed without supplying power to the first coil part was defined as the magnetic field pattern A. When forming a film at the same position as the magnetic field pattern A, the pattern formed by supplying power to the first coil part and changing it was defined as the magnetic field pattern B. Further, when the magnetic field pattern was changed between the magnetic field pattern A and the magnetic field pattern B, the sheet resistance distribution at each moving position was measured and averaged.

[0259] Here, the specifications for film formation are shown. Target composition: Aluminum Substrate dimensions: X direction × Z direction; 1500 mm × 1800 mm Film composition: Aluminum Film thickness: 200 nm Supply power (plasma formation power): 80 kW Bias power: Not used Supply gas and gas flow rate: Ar 200 sccm Atmospheric pressure: 0.3 Pa Film formation time: 86 sec The results are shown in Fig. 18.

[0260] From these results, it can be seen that when the B perpendicular zero position B⊥0 is changed by ±8 mm due to the change in the supply current, the sheet resistance distribution changes. Here, the sheet resistance distribution shown in FIG. 18 is the average of the sheet resistance values measured at three magnet stop positions in the Y direction of the glass substrate 11, and these are further arranged in the X direction position.

[0261] As a result, among the magnet numbers shown in FIG. 4, for No. 1, No. 2, No. 8, and No. 9, the parallel magnetic field strength B / / is about 8 [G] and is strong, but the sheet resistance is increasing. Generally, when the magnetic field strength is increased, the sheet resistance decreases, but the opposite result is obtained here. This indicates that it is not the parallel magnetic field strength B / / but the change in the B perpendicular zero position B⊥0 that causes the change in the sheet resistance distribution.

[0262] It should be noted that at the current values shown in FIGS. 14 and 16, it can be seen that when the current value is positive (+), the sheet resistance increases, and when the current value is negative (-), the sheet resistance decreases.

[0263] <Experimental Example 4> In the sputtering apparatus shown in the first embodiment, as shown in FIGS. 19 and 23, film formation was performed by switching the magnet oscillation recipe. Here, the magnet oscillation was performed in two scans.

[0264] Here, the specifications in film formation are shown. Target composition: Aluminum Substrate dimensions: X direction × Z direction; 1500 mm × 1800 mm Film composition: Aluminum Film thickness: 200 nm Supply power (plasma formation power): 80 kW Bias power: Not used Supply gas and gas flow rate: Ar 200 sccm Atmospheric pressure: 0.3 Pa Film formation time: 86 sec The results are shown in FIG. 24.

[0265] Magnet Oscillation Recipe A Region reA: 65%, Region reB: 35% Magnet Oscillation Recipe B Region reA: 92%, Region reB: 8%

[0266] From these results, it can be confirmed that by changing the switching point SwP in the magnet oscillation recipe to change the ratio of Region reA to Region reB, the sheet resistance distribution changes. Thus, it can be seen that by changing the magnet oscillation recipe, the adjustment of the sheet resistance distribution becomes possible.

[0267] Furthermore, in the present invention, it is possible to achieve effects such as improving the usage efficiency of the target material and facilitating the reduction of the non-erosion part.

Explanation of Signs

[0268] 1... Sputtering apparatus 4... Film formation chamber (chamber) 10... Cathode apparatus 10A... Cathode box 11... Glass substrate (transparent substrate) 13... Substrate holding part 22, 22A... Cathode unit 23, 23A... Target 23Aa... Rotation axis 24... Backing plate 25... Magnet (magnetic circuit) 26... Control unit 29... Magnet scanning part 31... Yoke 32... Peripheral magnet part 32a... End coil part 32b... First coil part 32c... Second coil part 32d... Third coil part 32e... Fourth coil part 32f... Fifth magnet part 33... Central magnet part 33a... End magnet part 33b…First coil part 41…Front space 42…Back space B⊥0…B perpendicular zero position B / / …Parallel magnetic field strength (magnetic field strength in the surface direction) Revers,Forward…Oscillating end position re2A,re2B,re2C,reA,reB…Regions R-F…Oscillation width SwP,SwP1,SwP2…Switching points

Claims

1. A cathode unit that emits sputter particles toward the formation region of the substrate to be coated, a target on which an erosion region is formed, a magnet that is disposed on the side opposite to the substrate to be coated with respect to the target and forms the erosion region on the target, a magnet scanning unit that can reciprocate in a swinging direction (scanning direction) that is a unidirectional direction along the substrate surface relative to the magnet and the substrate to be coated, a control unit that is connected to the magnet and the magnet scanning unit and controls the formation of a magnetic field and the reciprocating operation, A sputtering apparatus having: The magnet is disposed on a flat yoke surface along the surface of the substrate to be coated, A central magnet portion that is linearly arranged with the longitudinal direction being the direction orthogonal to the swinging direction and is divided in the longitudinal direction, A peripheral magnet portion that is provided so as to surround the central magnet portion and is divided in the longitudinal direction, Having: At the longitudinal ends of the central magnet portion, electromagnetic magnets are provided that are independently supplied with current and are adjacently arranged so as to be capable of generating different magnetic fields, The control unit: A switching point is set corresponding to the swinging position of the magnet with respect to the target during swinging, When the magnet passes through the switching point, the vertical magnetic field component formed by the magnet and the surface direction magnetic field intensity in the direction along the target surface are independently varied A sputtering apparatus characterized by the above.

2. When the magnet passes through the switching point, the B-vertical zero position formed by the magnet is changed The sputtering apparatus according to claim 1, characterized by the above.

3. When the magnet passes through the switching point, the surface direction magnetic field intensity in the direction along the target surface formed by the magnet is not changed The sputtering apparatus according to claim 2, characterized by the above.

4. The switching point is set at positions close to both ends in the swinging direction, When the swinging direction end of the magnet passes through the switching point, the B-vertical zero position formed by the magnet is changed The sputtering apparatus according to claim 3, characterized by the above.

5. When the swinging direction end of the magnet passes through the switching point, In the magnets at both ends in the swinging direction, increase the region formed by the B-vertical zero position when viewing the magnet from the film-forming substrate. The sputtering apparatus according to claim 4, characterized in that.

6. Apply a positive current to the magnet that varies the B-vertical zero position, and increase the region formed by the B-vertical zero position when viewing the magnet from the film-forming substrate. The sputtering apparatus according to claim 5, characterized in that.

7. When the swinging direction end of the magnet passes through the switching point, In the magnet on the central side in the swinging direction, reduce the region formed by the B-vertical zero position when viewing the magnet from the film-forming substrate. The sputtering apparatus according to claim 4, characterized in that.

8. Apply a negative current to the magnet that varies the B-vertical zero position, and reduce the region formed by the B-vertical zero position when viewing the magnet from the film-forming substrate. The sputtering apparatus according to claim 7, characterized in that.

9. The cathode unit is, The magnet is arranged on the flat yoke having a central region on the surface, It has a central magnet portion linearly arranged in the central region of the yoke and a peripheral magnet portion provided around the central magnet portion, and has a parallel region where the central magnet portion and the peripheral magnet portion are parallel to each other. A magnetic circuit provided on the surface of the yoke, A backing plate arranged on top of the magnetic circuit, Including, A plurality of the magnets are arranged side by side in the swinging direction, When the magnet passes through the switching point, In the swinging direction, power supply is performed on the magnets at both end positions and the magnet at the central position under different conditions to vary the B-vertical zero position. The sputtering apparatus according to any one of claims 1 to 8, characterized in that.

10. When the magnet passes through the switching point, The magnetic field region formed at both end positions in the swinging direction by the magnet has a shape that spreads in the direction along the surface of the film-forming substrate orthogonal to the swinging direction more than the magnetic field region formed at the central position in the swinging direction. The sputtering apparatus according to claim 9, characterized in that.

11. A cathode unit having a target capable of emitting sputter particles toward a film formation region of a substrate to be formed with a film has a magnet for forming an erosion region on the target, wherein the magnet is reciprocated relative to the substrate to be formed with a film in a swing direction (scanning direction) that is a single direction along the substrate surface by a magnet scanning unit, and is a sputtering method, the magnet is disposed on a flat yoke surface along the surface of the substrate to be formed with a film, is linearly disposed with a longitudinal direction perpendicular to the swing direction, and is divided in the longitudinal direction, and has a central magnet portion, and a peripheral magnet portion that is provided so as to surround the central magnet portion and is divided in the longitudinal direction, electromagnets that are independently supplied with current and are adjacently disposed so as to be capable of generating different magnetic fields are provided at longitudinal ends of the central magnet portion, a switching point is set corresponding to a swing position of the magnet with respect to the target during swinging, when the magnet passes through the switching point, a B perpendicular zero position at which a vertical magnetic field component formed by the magnet becomes zero and a surface direction magnetic field intensity in a direction along the target surface are independently varied This is a sputtering method characterized by the above.

12. When the magnet passes through the switching point, the B perpendicular zero position formed by the magnet is changed The sputtering method according to claim 11, characterized by the above.

13. When the magnet passes through the switching point, the surface direction magnetic field intensity in the direction along the target surface formed by the magnet is not changed The sputtering method according to claim 12, characterized by the above.

14. The switching point is set at positions close to both ends in the swing direction, When the swing direction end of the magnet passes through the switching point, the B perpendicular zero position formed by the magnet is changed The sputtering method according to claim 13, characterized by the above.

15. When the swing direction end of the magnet passes through the switching point, in the magnet at both ends in the swing direction, a region formed by the B perpendicular zero position when the magnet is viewed from the substrate to be formed with a film is increased The sputtering method according to claim 14, characterized by the above.

16. The sputtering method according to claim 15, characterized in that a positive current is applied to the magnet that varies the B perpendicular zero position, and the region formed by the B perpendicular zero position when the magnet is viewed from the film-forming substrate is increased.

17. When the end portion of the magnet in the swinging direction passes through the switching point, in the magnet on the central side in the swinging direction, the region formed by the B perpendicular zero position when the magnet is viewed from the film-forming substrate is reduced which is the sputtering method according to claim 14.

18. The sputtering method according to claim 17, characterized in that a negative current is applied to the magnet that varies the B perpendicular zero position, and the region formed by the B perpendicular zero position when the magnet is viewed from the film-forming substrate is reduced.

19. In the magnet arranged in a plurality of rows in the swinging direction, when the magnet passes through the switching point, in the swinging direction, power supply is performed under different conditions to the magnets at both end positions and the magnet at the central position in the swinging direction to vary the B perpendicular zero position which is the sputtering method according to claim 15 or 17.

20. When the magnet passes through the switching point, the magnetic field region formed at both end positions in the swinging direction by the magnet has a shape that spreads in the direction along the surface of the film-forming substrate perpendicular to the swinging direction more than the magnetic field region formed at the central position in the swinging direction which is the sputtering method according to claim 19.

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