Semiconductor laser device

Abstract

To provide a semiconductor laser device capable of reducing an inductance component.SOLUTION: A semiconductor laser device A1 includes: a semiconductor laser element 4; a switching element 5 including a gate electrode 52, a source electrode 53 connected to the semiconductor laser element 4, and a drain electrode 54; and a support member 1 having a conductive part 3 that forms a conduction path to the switching element 5 and the semiconductor laser element 4 and supporting the semiconductor laser element 4 and the switching element 5. The conductive part 3 has a front surface first section 311 which is spaced apart from the semiconductor laser element 4 and is connected to the source electrode 53. Such a configuration can reduce an inductance component of the semiconductor laser device A1.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a semiconductor laser device.

Background Art

[0002] A system using LiDAR (Light Detection and Ranging, Laser Imaging Detection and Ranging) has been proposed for three-dimensional distance measurement used in automobiles and the like (for example, Patent Document 1). The semiconductor laser device used as the light source of LiDAR emits pulsed laser light with a pulse width of several tens of nS or less. For this reason, the time change rate of the current increases, and the loss due to the inductance component in the semiconductor laser device increases.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure has been conceived under the above circumstances, and an object thereof is to provide a semiconductor laser device capable of reducing the inductance component.

Means for Solving the Problems

[0005] The semiconductor laser device provided by the present disclosure includes a semiconductor laser element, a switching element having a gate electrode, a source electrode, and a drain electrode, and a conductive part that forms a conduction path to the switching element and the semiconductor laser element and supports the semiconductor laser element and the switching element. The conductive part has a first part separated from the semiconductor laser element, and includes one or more first wires connected to the source electrode of the switching element and the semiconductor laser element, and one or more second wires connected to the source electrode of the switching element and the first part of the conductive part.

Effect of the Invention

[0006] According to the semiconductor laser device of the present disclosure, the inductance component can be reduced.

[0007] Other features and advantages of the present disclosure will become clearer from the following detailed description with reference to the accompanying drawings.

Brief Description of the Drawings

[0008]

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Embodiments for Carrying Out the Invention

[0009] Hereinafter, preferred embodiments of the present disclosure will be specifically described with reference to the drawings.

[0010] In the present disclosure, terms such as "first", "second", and "third" are merely used as labels and are not necessarily intended to assign an order to those objects.

[0011] <First Embodiment> Figs. 1 to 8 show a semiconductor laser device according to a first embodiment of the present disclosure. The semiconductor laser device A1 of this embodiment includes a support member 1, a semiconductor laser element 4, a switching element 5, a capacitor 6, a first wire 71, a second wire 72, a third wire 73, and a translucent resin 8. The semiconductor laser device A1 constitutes, for example, a laser system B1 shown in Fig. 8 and is used as a pulsed laser light source for LiDAR, which is an example of two-dimensional distance measurement. However, the application of the semiconductor laser device of the present disclosure is not limited in any way.

[0012] FIG. 1 is a principal part plan view showing a semiconductor laser device A1. FIG. 2 is a bottom view showing the semiconductor laser device according to the semiconductor laser device A1. FIG. 3 is a cross-sectional view taken along line III-III of FIG. 1. FIG. 4 is a cross-sectional view taken along line IV-IV of FIG. 1. FIG. 5 is a cross-sectional view taken along line V-V of FIG. 1. FIG. 6 is a cross-sectional view taken along line VI-VI of FIG. 1. FIG. 7 is a cross-sectional view taken along line VII-VII of FIG. 1. FIG. 8 is a circuit diagram showing a laser system B1 including the semiconductor laser device A1. In these figures, the z direction corresponds to the first direction of the present disclosure. Further, in FIG. 1, for convenience of explanation, the translucent resin 8 is omitted.

[0013] The support member 1 constitutes a conduction path to the semiconductor laser element 4 and the switching element 5 and supports the semiconductor laser element 4 and the switching element 5. The specific configuration of the support member 1 is not particularly limited. In the present embodiment, the support member 1 has a base material 2 and a conductive portion 3.

[0014] The base material 2 is made of an insulating material. The material of the base material 2 is not particularly limited, and examples thereof include epoxy resin and ceramics. In the following description, the case where the base material 2 is made of glass epoxy resin will be described as an example. In the present embodiment, the base material 2 has a main surface 21, a back surface 22, a first surface 23, a second surface 24, a third surface 25, and a fourth surface 26, and is, for example, rectangular in the z-direction view.

[0015] The main surface 21 is a surface facing one side in the z direction, and is a flat surface in the illustrated example. The back surface 22 is a surface facing the other side in the z direction opposite to the main surface 21, and is a flat surface in the illustrated example. The first surface 23 is a surface facing one side in the x direction, and is a flat surface in the illustrated example. The second surface 24 is a surface facing the other side in the x direction opposite to the first surface 23, and is a flat surface in the illustrated example. The third surface 25 is a surface facing one side in the y direction, and is a flat surface in the illustrated example. The fourth surface 26 is a surface facing the other side in the x direction opposite to the third surface 25, and is a flat surface in the illustrated example.

[0016] The conductive portion 3 is a part that constitutes a conduction path to the semiconductor laser element 4, the switching element 5, etc. The material of the conductive portion 3 is not particularly limited, and examples thereof include metals such as Cu, Ni, Ti, and Au. Further, the formation method of the conductive portion 3 is not particularly limited, and in the illustrated example, it is formed by plating, for example.

[0017] The conductive portion 3 of the present embodiment includes a main surface portion 31, a back surface portion 32, and a connecting portion 33.

[0018] The main surface portion 31 is disposed on the main surface 21 of the base material 2. In the illustrated example, the main surface portion 31 includes a first main surface portion 311, a second main surface portion 312, a third main surface portion 313, and a fourth main surface portion 314.

[0019] As shown in FIGS. 1, 3, 4, and 7, the first main surface portion 311 is on the side of the second surface 24 in the x direction of the main surface 21 of the base material 2 and is disposed on the side of the third surface 25 in the y direction. The shape of the first main surface portion 311 is not particularly limited, and in the illustrated example, it is a long rectangular shape with the x direction as the longitudinal direction. The first main surface portion 311 is an example of the "first portion" of the present disclosure. The first main surface portion 311 of the present embodiment is separated from the second surface 24 and the third surface 25.

[0020] As shown in FIGS. 1, 3, 4, and 6, the second main surface portion 312 is disposed closer to the fourth surface 26 in the y direction than the first main surface portion 311. The dimension of the second main surface portion 312 in the x direction is larger than the dimension of the first main surface portion 311 in the x direction. The second main surface portion 312 overlaps the first main surface portion 311 in the y-direction view. The shape of the second main surface portion 312 is not particularly limited, and in the illustrated example, it is a rectangular shape. The area of the second main surface portion 312 is larger than that of the first main surface portion 311, the third main surface portion 313, and the fourth main surface portion 314. The second main surface portion 312 of the present embodiment is separated from the first surface 23 and the second surface 24.

[0021] As shown in FIGS. 1, 3, 4, and 5, the third main surface portion 313 is disposed closer to the fourth surface 26 than the second main surface portion 312 in the y direction. The shape of the third main surface portion 313 is not particularly limited, and in the illustrated example, it is a long rectangular shape with the x direction as the longitudinal direction. Also, in the illustrated example, the x-direction dimension of the third main surface portion 313 is substantially the same as the x-direction dimension of the second main surface portion 312. The third main surface portion 313 overlaps the first main surface portion 311 and the second main surface portion 312 in a view in the y direction. The third main surface portion 313 of the present embodiment is separated from the first surface 23, the second surface 24, and the fourth surface 26.

[0022] As shown in FIGS. 1 and 7, the fourth main surface portion 314 is positioned closer to the first surface 23 than the first main surface portion 311 in the x direction, and closer to the third surface 25 than the second main surface portion 312 in the y direction. The shape of the fourth main surface portion 314 is not particularly limited, and in the illustrated example, it is a rectangular shape. In the illustrated example, the y-direction dimension of the fourth main surface portion 314 is substantially the same as the y-direction dimension of the first main surface portion 311. Also, the x-direction dimension of the fourth main surface portion 314 is smaller than the x-direction dimension of the first main surface portion 311. The area of the fourth main surface portion 314 is smaller than the area of the first main surface portion 311. The fourth main surface portion 314 overlaps the first main surface portion 311 in a view in the x direction. Also, the fourth main surface portion 314 overlaps the second main surface portion 312 and the third main surface portion 313 in a view in the y direction. The fourth main surface portion 314 of the present embodiment is separated from the first surface 23 and the third surface 25.

[0023] The back surface portion 32 is disposed on the back surface 22 of the base material 2. In the illustrated example, the back surface portion 32 includes a first back surface portion 321, a second back surface portion 322, a third back surface portion 323, and a fourth back surface portion 324. In the present embodiment, the back surface portion 32 is used as a mounting terminal when mounting the semiconductor laser device A1 on a circuit board (not shown) or the like.

[0024] As shown in FIGS. 1, 3, 4, and 7, the first back surface portion 321 is located on the second surface 24 side in the x direction of the back surface 22 of the base material 2 and on the third surface 25 side in the y direction. The shape of the first back surface portion 321 is not particularly limited, and in the illustrated example, it is a long rectangular shape with the x direction as the longitudinal direction. The first back surface portion 321 of the present embodiment is separated from the second surface 24 and the third surface 25.

[0025] As shown in FIGS. 2, 3, 4, and 6, the second back surface portion 322 is arranged closer to the fourth surface 26 in the y direction than the first back surface portion 321. The x-direction dimension of the second back surface portion 322 is larger than the x-direction dimension of the first back surface portion 321. The second back surface portion 322 overlaps the first back surface portion 321 in a view from the y direction. The shape of the second back surface portion 322 is not particularly limited, and in the illustrated example, it is a rectangular shape. The area of the second back surface portion 322 is larger than that of the first back surface portion 321, the third back surface portion 323, and the fourth back surface portion 324. The second back surface portion 322 of the present embodiment is separated from the first surface 23 and the second surface 24.

[0026] As shown in FIGS. 2, 3, 4, and 5, the third back surface portion 323 is arranged closer to the fourth surface 26 in the y direction than the second back surface portion 322. The shape of the third back surface portion 323 is not particularly limited, and in the illustrated example, it is a long rectangular shape with the x direction as the longitudinal direction. Also, in the illustrated example, the x-direction dimension of the third back surface portion 323 is substantially the same as the x-direction dimension of the second back surface portion 322. The third back surface portion 323 overlaps the first back surface portion 321 and the second back surface portion 322 in a view from the y direction. The third back surface portion 323 of the present embodiment is separated from the first surface 23, the second surface 24, and the fourth surface 26.

[0027] As shown in FIGS. 2 and 7, the fourth back surface portion 324 is located closer to the first surface 23 in the x direction with respect to the first back surface portion 321, and closer to the third surface 25 in the y direction with respect to the second back surface portion 322. The shape of the fourth back surface portion 324 is not particularly limited, and in the illustrated example, it is rectangular. In the illustrated example, the dimension of the fourth back surface portion 324 in the y direction is substantially the same as the dimension of the first back surface portion 321 in the y direction. Also, the dimension of the fourth back surface portion 324 in the x direction is smaller than the dimension of the first back surface portion 321 in the x direction. The area of the fourth back surface portion 324 is smaller than the area of the first back surface portion 321. The fourth back surface portion 324 overlaps the first back surface portion 321 when viewed in the x direction. Also, the fourth back surface portion 324 overlaps the second back surface portion 322 and the third back surface portion 323 when viewed in the y direction. The fourth back surface portion 324 of the present embodiment is spaced apart from the first surface 23 and the third surface 25.

[0028] The connection portion 33 electrically connects each part of the main surface portion 31 and each part of the back surface portion 32. The specific configuration of the connection portion 33 is not particularly limited, and in the illustrated example, as shown in FIGS. 1 and 2, it includes a plurality of first connection portions 331, a plurality of second connection portions 332, a plurality of third connection portions 333, and a fourth connection portion 334. Note that the number of the first connection portions 331, the second connection portions 332, the third connection portions 333, and the fourth connection portion 334 is not limited at all.

[0029] The specific configurations of the first connection portion 331, the second connection portion 332, the third connection portion 333, and the fourth connection portion 334 are not particularly limited. In the present embodiment, as shown in FIGS. 1 to 7, in the inner region of the base material 2 (the region spaced apart from the first surface 23, the second surface 24, the third surface 25, and the fourth surface 26) when viewed in the z direction, the base material 2 is penetrated in the thickness direction. Such first connection portion 331, second connection portion 332, third connection portion 333, and fourth connection portion 334 are provided by forming a plating layer made of metal on the inner surface of the through hole formed in the base material 2, and reach the main surface 21 and the back surface 22. Note that in the illustrated example, the interiors of the first connection portion 331, the second connection portion 332, the third connection portion 333, and the fourth connection portion 334 are filled with resin, but for example, they may be filled with metal.

[0030] As shown in FIGS. 1, 2, 3, 4, and 7, a plurality of first connecting portions 331 are connected to the first main surface portion 311 and the first back surface portion 321, and connect the first main surface portion 311 and the first back surface portion 321. In the present embodiment, the plurality of first connecting portions 331 are arranged along the x direction.

[0031] As shown in FIGS. 1, 2, and 6, a plurality of second connecting portions 332 are connected to the first back surface portion 321 and the second back surface portion 322, and connect the second main surface portion 312 and the second back surface portion 322. In the present embodiment, the plurality of second connecting portions 332 are arranged closer to the first surface 23 in the x direction. In the illustrated example, the plurality of second connecting portions 332 are arranged in a matrix along the x and y directions.

[0032] As shown in FIGS. 1, 2, 3, and 5, a plurality of third connecting portions 333 are connected to the third main surface portion 313 and the third back surface portion 323, and connect the third main surface portion 313 and the third back surface portion 323. In the present embodiment, the plurality of third connecting portions 333 are arranged along the x direction. Further, the plurality of third connecting portions 333 are arranged closer to the first surface 23 in the x direction.

[0033] As shown in FIGS. 1, 2, and 7, the fourth connecting portion 334 is connected to the fourth main surface portion 314 and the fourth back surface portion 324, and connects the fourth main surface portion 314 and the fourth back surface portion 324. Different from the illustrated example, a configuration having a plurality of fourth connecting portions 334 may be used.

[0034] The semiconductor laser element 4 is the light source of the semiconductor laser device A1 and includes an active layer made of a semiconductor layer and the like. In the present embodiment, as shown in FIG. 3, the semiconductor laser element 4 has a first laser electrode 41 and a second laser electrode 42. The first laser electrode 41 is provided on the side facing the main surface 21 in the z direction. The second laser electrode 42 is provided on the side facing the back surface 22 in the z direction. In FIG. 1, the first laser electrode 41 is omitted. In the present embodiment, the first laser electrode 41 is an anode electrode and the second laser electrode 42 is a cathode electrode.

[0035] As shown in FIGS. 1 and 3, in the present embodiment, the semiconductor laser element 4 is disposed on the third main surface portion 313. More specifically, the second laser electrode 42 of the semiconductor laser element 4 is conductively joined to the third main surface portion 313 by a conductive joining material 49. The conductive joining material 49 is, for example, solder or silver paste. In the illustrated example, the semiconductor laser element 4 is included in the third main surface portion 313 in a view in the z direction. The semiconductor laser element 4 emits laser light L toward the side facing the fourth surface 26 in the y direction. Also, in the illustrated example, the semiconductor laser element 4 overlaps with the one of the plurality of third connection portions 333 that is located closest to the second surface 24 in the x direction in a view in the z direction.

[0036] The switching element 5 is an element for turning on / off the current to the semiconductor laser element 4. The switching element 5 is, for example, a transistor such as an FET made of Si, SiC, or GaN. When the switching element 5 is made of SiC, it is suitable for speeding up switching. The switching element 5 of the present embodiment has an element body 51, a gate electrode 52, a source electrode 53, and a drain electrode 54, as shown in FIGS. 1, 3, and 6. The element body 51 is made of a semiconductor material such as Si or SiC and has an element main surface 511 and an element back surface 512. The element main surface 511 is a surface facing the same side as the main surface 21 in the z direction. The element back surface 512 is a surface facing the same side as the back surface 22 in the z direction.

[0037] The gate electrode 52 is disposed on the main element surface 511. In the illustrated example, the gate electrode 52 is disposed closer to the first surface 23 in the x direction and closer to the third surface 25 in the y direction. The shape of the gate electrode 52 is not particularly limited, and in the illustrated example, it is rectangular in the view in the z direction.

[0038] The source electrode 53 is disposed on the main element surface 511. In the illustrated example, the source electrode 53 is L-shaped in the view in the z direction and is disposed in a region on the second surface 24 side in the x direction and a region closer to the fourth surface 26 in the y direction with respect to the gate electrode 52.

[0039] The drain electrode 54 is disposed on the back surface 512 of the element, and in the illustrated example, it covers substantially the entire back surface 512 of the element.

[0040] The switching element 5 is disposed on the second main surface portion 312 by electrically connecting the drain electrode 54 to the second main surface portion 312 by the conductive bonding material 59. The conductive bonding material 59 is, for example, solder or silver paste. In the present embodiment, the switching element 5 is disposed closer to the first surface 23 in the x direction on the second main surface portion 312. Further, the switching element 5 overlaps all of the plurality of second connection portions 332 in the view in the z direction. The switching element 5 overlaps the semiconductor laser element 4 in the view in the y direction.

[0041] The capacitor 6 is for temporarily storing the charge that should become the current for energizing the semiconductor laser element 4. As shown in FIGS. 1 and 4, in the illustrated example, the capacitor 6 has electrodes 61 and 62. The electrode 61 is conductively joined to the third main surface portion 313 by a conductive joining material 69. The electrode 62 is conductively joined to the second main surface portion 312 by the conductive joining material 69. The conductive joining material 69 is, for example, solder. In FIG. 1, the conductive joining material 69 is omitted for convenience of explanation. Also, in the present embodiment, the semiconductor laser device A1 includes two capacitors 6. The two capacitors 6 are connected in parallel with each other. Further, in the present embodiment, the capacitor 6 is arranged closer to the second surface 24 in the x direction with respect to the semiconductor laser element 4 and the switching element 5.

[0042] As shown in FIGS. 1 and 3, a plurality of first wires 71 are connected to the source electrode 53 of the switching element 5 and the first laser electrode 41 of the semiconductor laser element 4. The first wire 71 is made of, for example, a metal such as Au, Cu, or Al. The number of the plurality of first wires 71 is not particularly limited, and in the illustrated example, it is three. The plurality of first wires 71 are connected to a portion of the source electrode 53 closer to the fourth surface 26 in the y direction. The plurality of first wires 71 are connected to the first laser electrode 41 of the semiconductor laser element 4 so as to be arranged in the y direction.

[0043] As shown in FIGS. 1 and 3, a plurality of second wires 72 are connected to the source electrode 53 of the switching element 5 and the first main surface portion 311 of the main surface of the conductive portion 3. The second wire 72 is made of a metal such as Au, Cu, Al, etc. In this embodiment, it is made of Au, which is the same material as the first wire 71. The number of the plurality of second wires 72 is not particularly limited. In the illustrated example, the number is two, which is less than the number of the plurality of first wires 71. For this reason, the resistance value of the plurality of first wires 71 is smaller than the resistance value of the plurality of second wires 72. The plurality of second wires 72 are connected to a portion of the source electrode 53 closer to the third surface 25 in the y direction. The plurality of second wires 72 are connected to the first main surface portion 311 so as to be arranged in the x direction.

[0044] As shown in FIG. 1, a third wire 73 is connected to the gate electrode 52 of the switching element 5 and the fourth main surface portion 314 of the main surface of the conductive portion 3. The third wire 73 is made of a metal such as Au, Cu, Al, etc. In this embodiment, it is made of Au. The number of the third wires 73 is not particularly limited. In the illustrated example, the number is one.

[0045] The light-transmitting resin 8 is disposed on the main surface 21 and covers the semiconductor laser element 4, the switching element 5, the plurality of capacitors 6, the plurality of first wires 71, the plurality of second wires 72, and the third wire 73. The light-transmitting resin 8 is made of a material that transmits the laser light L from the semiconductor laser element 4, and is made of, for example, a transparent epoxy resin or a silicone resin.

[0046] The shape of the light-transmitting resin 8 is not particularly limited. In this embodiment, as shown in FIGS. 3 to 7, the light-transmitting resin 8 has a main surface 81, a first resin surface 83, a second resin surface 84, a third resin surface 85, and a fourth resin surface 86.

[0047] The main surface 81 faces the same side as the main surface 21 in the z direction, and in the illustrated example, it is a flat surface. The first resin surface 83 faces the same side as the first surface 23 in the x direction. In the illustrated example, the first resin surface 83 is a flat surface and is flush with the first surface 23. The second resin surface 84 faces the same side as the second surface 24 in the x direction. In the illustrated example, the second resin surface 84 is a flat surface and is flush with the second surface 24. The third resin surface 85 faces the same side as the third surface 25 in the y direction. In the illustrated example, the third resin surface 85 is a flat surface and is flush with the third surface 25. The fourth resin surface 86 faces the same side as the fourth surface 26 in the y direction. In the illustrated example, the fourth resin surface 86 is a flat surface and is flush with the fourth resin surface 86. In the present embodiment, the laser light L from the semiconductor laser element 4 is emitted from the fourth resin surface 86 of the translucent resin 8. By making the fourth resin surface 86 a flat and smooth surface, scattering of the laser light L can be suppressed and the emission efficiency can be increased.

[0048] As shown in FIG. 8, the semiconductor laser device A1 can be used in the laser system B1. The laser system B1 includes the semiconductor laser device A1, a gate driver 91, a DC power supply 92, a resistor 93, and a diode 94.

[0049] The gate driver 91 is connected to the gate electrode 52 of the switching element 5 via the fourth back surface portion 324, the fourth connection portion 334, the fourth main surface portion 314, and the third wire 73. The gate driver 91 controls the drive voltage applied to the gate electrode 52.

[0050] The DC power supply 92 is a power supply for causing the semiconductor laser element 4 to emit light. The anode electrode of the DC power supply 92 is connected to the second back surface portion 322 via the resistor 93.

[0051] The diode 94 is provided between the first back surface portion 321 and the third back surface portion 323, and conducts a current flowing from the third back surface portion 323 toward the first back surface portion 321. 94 is for preventing an excessive reverse voltage from being applied to the semiconductor laser element 4 and for realizing the charging of the capacitor 6.

[0052] In the laser system B1 having such a configuration, when the switching element 5 is in the OFF state, a current IC flows from the DC power supply 92 through the resistor 93, the second back surface portion 322, the capacitor 6, the third back surface portion 323, the diode 94, and the first back surface portion 321, and the capacitor 6 is charged. Then, when the switching element 5 is in the ON state, the charge charged in the capacitor 6 flows as a current IL through the switching element 5, the first wire 71, and the semiconductor laser element 4, and the semiconductor laser element 4 emits light.

[0053] Next, the operation of the semiconductor laser device A1 will be described.

[0054] According to the present embodiment, as shown in FIGS. 1 and 8, the current IG flowing when a voltage is applied from the gate driver 91 to the gate electrode 52 of the switching element 5 mainly flows from the source electrode 53 through the second wire 72 to the first back surface portion 321. On the other hand, the current IL for causing the semiconductor laser element 4 to emit light mainly flows from the source electrode 53 through the first wire 71 to the semiconductor laser element 4. Therefore, the current IL and the current IG mainly flow through mutually different paths. For this reason, for example, it is possible to suppress the current IL from passing through the current path for applying the gate voltage to the gate electrode 52. Further, the source electrode 53 and the semiconductor laser element 4 are directly connected to each other by the first wire 71. Therefore, the inductance component of the path of the current IL can be reduced. As a result, faster switching is possible and the peak current value of the current IL can be further increased. This is advantageous for emitting laser light L with a smaller pulse width in a higher output state, and is preferable as a light source device for LiDAR.

[0055] The main surface portion 31, which is the object of mounting the semiconductor laser element 4, the switching element 5, and the capacitor 6, and connecting the first wire 71, the second wire 72, and the third wire 73, is disposed on the main surface 21, and the back surface portion 32 used as a connection terminal to the outside is disposed so as to overlap each other in the z - direction view. This is suitable for miniaturization of the semiconductor laser device A1 in the z - direction view. Further, the main surface portion 31 and the back surface portion 32 are connected by a connecting portion 33. The connecting portion 33 includes a first connecting portion 331, a second connecting portion 332, a third connecting portion 333, and a fourth connecting portion 334 that penetrate the base material 2. The first connecting portion 331, the second connecting portion 332, the third connecting portion 333, and the fourth connecting portion 334 all have a shape along the z - direction and are not bent. Therefore, it is preferable for reducing the inductance component in the current path flowing through the semiconductor laser device A1.

[0056] As shown in FIG. 1, the switching element 5 and the capacitor 6 are arranged in the x - direction. The semiconductor laser element 4 is mounted on the third main - surface portion 313 that is closer to the main surface 21 than the switching element 5 and the capacitor 6 in the y - direction. For this reason, the path length of the path from the source electrode 53 of the switching element 5, through the first wire 71, the semiconductor laser element 4, the third main - surface portion 313, and the capacitor 6 to the second main - surface portion 312 is set to be relatively short. This is suitable for reducing the inductance component of the current path IL in FIG. 8.

[0057] The number of the plurality of first wires 71 is larger than the number of the plurality of second wires 72, and the resistance value of the plurality of first wires 71 is smaller than the resistance value of the plurality of second wires 72. A current IL for causing the semiconductor laser element 4 to emit light flows through the plurality of first wires 71. The current IL is significantly larger than the current IG. Therefore, by reducing the resistance value of the plurality of first wires 71, electrical loss can be suppressed.

[0058] The number of the plurality of second wires 72 is larger than the number of the third wire 73. Thereby, the electrical loss related to the current IG can be suppressed.

[0059] Figures 9 to 59 show modified examples and other embodiments of the present disclosure. In these figures, elements identical or similar to those in the above-described embodiment are denoted by the same reference numerals as in the above-described embodiment.

[0060] <Laser System B1 First Modified Example> Figure 9 shows a first modified example of the laser system B1. The laser system B11 of this modified example includes a resistor 95. The resistor 95 is connected in series with the diode 94 between the back surface third portion 323 and the back surface first portion 321. By providing the resistor 95, it is possible to suppress the oscillation of the current value that occurs when the switching element 5 is switched from the ON state to the OFF state.

[0061] <Laser System B1 Second Modified Example> Figure 10 shows a second modified example of the laser system B1. The laser system B12 of this modified example does not include the above-described diode 94. A resistor 95 is provided between the back surface first portion 321 and the back surface third portion 323. In this modified example, although current can always flow from the back surface first portion 321 to the back surface third portion 323, the laser system B12 can be operated by adjusting the operating conditions.

[0062] <First Embodiment First Modified Example> Figure 11 is a plan view of a main part showing a first modified example of the semiconductor laser device A1. Figure 12 is a bottom view showing a first modified example of the semiconductor laser device A1. In the semiconductor laser device A11 of this modified example, the main surface first portion 311 is disposed closer to the first surface 23 in the x direction on the main surface 21 of the base material 2, and the main surface fourth portion 314 is disposed closer to the second surface 24 in the x direction. The main surface second portion 312 is disposed closer to the fourth surface 26 in the y direction with respect to the main surface first portion 311 and the main surface fourth portion 314. The main surface third portion 313 is disposed closer to the fourth surface 26 in the y direction with respect to the main surface second portion 312. The x-direction dimensions of the main surface second portion 312 and the main surface third portion 313 are substantially the same.

[0063] The back first part 321 is disposed near the first surface 23 in the x direction on the back surface 22 of the base material 2, and the back fourth part 324 is disposed near the second surface 24 in the x direction. The back second part 322 is disposed near the fourth surface 26 in the y direction with respect to the back first part 321 and the back fourth part 324. The back third part 323 is disposed near the fourth surface 26 in the y direction with respect to the back second part 322. The x-direction dimensions of the back second part 322 and the back third part 323 are substantially the same.

[0064] In this example, the main surface second part 312 has a convex part 3122. The convex part 3122 protrudes from a portion near the second surface 24 in the x direction toward the fourth surface 26 side in the y direction. The main surface third part 313 has a convex part 3133. The convex part 3133 protrudes from a portion near the first surface 23 in the x direction toward the third surface 25 side in the y direction. The convex part 3122 and the convex part 3133 are arranged side by side in the x direction and overlap in the x-direction view.

[0065] The switching element 5 is arranged such that the x-direction center substantially coincides with the main surface second part 312. The gate electrode 52 is disposed near the second surface 24 in the x direction, and the source electrode 53 is disposed in a region near the first surface 23 in the x direction with respect to the gate electrode 52 and a region near the fourth surface 26 in the y direction.

[0066] The semiconductor laser element 4 is arranged at a position overlapping the convex part 3133 in the y-direction view. The electrode 62 of the capacitor 6 is conductively joined to the convex part 3122 of the main surface second part 312. The semiconductor laser element 4 and the capacitor 6 are arranged side by side in the x direction and overlap each other in the x-direction view. Also, the capacitor 6 overlaps the switching element 5 in the y-direction view.

[0067] Also according to this modification example, the inductance component can be reduced. Further, since the switching element 5 and the capacitor 6 overlap in the y-direction view, the x-direction dimension of the semiconductor laser device A11 can be reduced. Further, since the convex portion 3122 and the convex portion 3133 overlap in the x-direction view, the y-direction dimension of the semiconductor laser device A11 can be reduced.

[0068] <First Embodiment, Second Modification Example> FIG. 13 is a plan view of a main part showing a second modification example of the semiconductor laser device A1. FIG. 14 is a bottom view showing a second modification example of the semiconductor laser device A1. The semiconductor laser device A12 of this modification example is different from the above-described semiconductor laser device A11 in that it includes two semiconductor laser elements 4.

[0069] The two semiconductor laser elements 4 are arranged side by side in the x direction. Each of the two semiconductor laser elements 4 emits laser light L in the y direction.

[0070] Each of the plurality of first wires 71 is connected to the source electrode 53 and the first laser electrodes 41 of one semiconductor laser element 4 and the other semiconductor laser element 4, and has a bent shape.

[0071] Also according to this modification example, the inductance component can be reduced. Further, by providing two semiconductor laser elements 4, high luminance can be achieved.

[0072] <First Embodiment, Third Modification Example> FIG. 15 is a plan view of a main part showing a third modification example of the semiconductor laser device A1. FIG. 16 is a bottom view showing a third modification example of the semiconductor laser device A1. The semiconductor laser device A13 of this modification example is different from the above-described semiconductor laser device A12 in that the two semiconductor laser elements 4 emit laser light L in the x direction.

[0073] The two semiconductor laser elements 4 are arranged side by side in the y direction. One semiconductor laser element 4 is arranged on the convex portion 3133. The two semiconductor laser elements 4 each emit laser light L in the x direction.

[0074] Also according to this modification example, the inductance component can be reduced. Further, by providing two semiconductor laser elements 4, high luminance can be achieved. As understood from this modification example, the direction in which the laser light L is emitted can be set variously.

[0075] <First Embodiment, Fourth Modification Example> FIG. 17 is a main part plan view showing a fourth modification example of the semiconductor laser device A1. FIG. 18 is a bottom view showing a fourth modification example of the semiconductor laser device A1. The semiconductor laser device A14 of this modification example differs from the semiconductor laser device A13 described above in the number of semiconductor laser elements 4.

[0076] In this modification example, the number of semiconductor laser elements 4 is one. The semiconductor laser element 4 is arranged on the convex portion 3133.

[0077] Also according to this modification example, the inductance component can be reduced. As understood from the semiconductor laser device A13 and this modification example, the number of semiconductor laser elements 4 can be set variously.

[0078] <First Embodiment, Fifth Modification Example> FIG. 19 is a main part plan view showing a fifth modification example of the semiconductor laser device A1. FIG. 20 is a bottom view showing a fifth modification example of the semiconductor laser device A1. The semiconductor laser device A15 of this modification example includes a diode 94.

[0079] The diode 94 is provided in series between the main surface first portion 311 and the main surface third portion 313 and allows a current to flow from the main surface third portion 313 toward the main surface first portion 311. In the illustrated example, the diode 94 is mounted on the main surface first portion 311.

[0080] In the illustrated example, the semiconductor laser element 4 is configured to emit the laser beam L in the x direction, but it is not limited thereto, and for example, it may be configured to emit the laser beam L in the y direction. The arrangements of the main surface first part 311, the main surface second part 312, the main surface third part 313, the main surface fifth part 315, the back surface first part 321, the back surface second part 322, and the intermediate second part 342 are not limited at all as long as they can form the circuit formed by the illustrated example.

[0081] Also according to this modification example, the inductance component can be reduced. By incorporating the diode 94 into the semiconductor laser device A15, it is particularly advantageous for reducing the inductance component of the conduction path of the above-described current IC flowing through the diode 94.

[0082] <Second Embodiment> FIG. 21 is a main part plan view showing a semiconductor laser device according to a second embodiment of the present disclosure. FIG. 22 is a bottom view showing the semiconductor laser device according to the second embodiment of the present disclosure.

[0083] In the semiconductor laser device A2 of the present embodiment, the main surface second part 312 has a recess 3121. The recess 3121 is a part where the portion of the main surface second part 312 on the fourth surface 26 side in the y direction is recessed toward the third surface 25 side in the y direction. The recess 3121 is located at the center of the main surface second part 312 in the x direction.

[0084] The main surface third part 313 of the present embodiment has a convex part 3132. The convex part 3132 is a part where the portion of the main surface third part 313 on the third surface 25 side in the y direction protrudes toward the third surface 25 side in the y direction. The convex part 3132 is located at the center of the main surface third part 313 in the x direction. Further, the convex part 3132 overlaps with the recess 3121 in the y-direction view.

[0085] The semiconductor laser element 4 is disposed at a position overlapping the convex portion 3132 in the view in the y direction, and overlaps at least a part of the convex portion 3132 in the view in the z direction. The two capacitors 6 are disposed on both sides in the x direction with the semiconductor laser element 4 interposed therebetween. The two capacitors 6 do not overlap the concave portion 3121 and the convex portion 3132 in the view in the y direction.

[0086] Also according to this embodiment, the inductance component can be reduced. Further, since the semiconductor laser element 4 is disposed closer to the center in the x direction of the support member 1, it is possible to emit the laser light L from a position closer to the center in the x direction of the semiconductor laser device A2.

[0087] The concave portion 3121 is formed in the second main surface portion 312, and the convex portion 3132 is formed in the third main surface portion 313. The concave portion 3121 and the convex portion 3132 overlap in the view in the y direction, and the semiconductor laser element 4 overlaps the concave portion 3121 and the convex portion 3132 in the view in the y direction. With such a configuration, the dimension of the semiconductor laser device A2 in the y direction can be reduced.

[0088] <Second Embodiment, First Modification> FIG. 23 is a plan view of a main part showing a first modification of the semiconductor laser device A2. FIG. 24 is a bottom view of a main part showing a first modification of the semiconductor laser device A2. FIG. 25 is a cross-sectional view taken along line XXV-XXV of FIG. 23.

[0089] In the semiconductor laser device A21 of this modification, the base material 2 has a recess 261. The recess 261 is a portion recessed from the fourth surface 26 toward the third surface 25 in the y direction. The recess 261 is disposed closer to the center of the base material 2 in the x direction. The third main surface portion 313 has a recess 3131 and a protrusion 3132. The recess 3131 is a portion where the portion of the third main surface portion 313 on the fourth surface 26 side in the y direction is recessed toward the third surface 25 in the y direction. The protrusion 3132 is a portion where the portion of the third main surface portion 313 on the third surface 25 side in the y direction protrudes toward the third surface 25 in the y direction. The recess 261, the recess 3131, and the protrusion 3132 overlap each other in the y-direction view. Also, the recess 261 and the recess 3131 overlap the semiconductor laser element 4 with each other.

[0090] As shown in FIG. 25, the recess 261 is recessed from the resin fourth surface 86 of the translucent resin 8 toward the third surface 25 in the y direction. That is, the recess 261 is spaced apart from the resin fourth surface 86, and the recess 261 is filled with the translucent resin 8.

[0091] Also according to this modification, the inductance component can be reduced. Further, by having the recess 261, the edge of the recess 261 and the y-direction edge (the emission portion of the laser light L) of the semiconductor laser element 4 are closer to each other. Thereby, it is possible to suppress the laser light L from interfering with the base material 2. Further, since the resin fourth surface 86 is flat, the entire semiconductor laser device A21 has a simple rectangular parallelepiped shape, which has the advantage of facilitating operations such as transportation and mounting.

[0092] <Second Embodiment, Second Modification> FIG. 26 is a plan view of a main part showing a second modification of the semiconductor laser device A2. FIG. 27 is a bottom view of a main part showing a second modification of the semiconductor laser device A2.

[0093] The semiconductor laser device A22 of this modification example includes two semiconductor laser elements 4, and the other configurations are the same as or similar to those of the above-described semiconductor laser device A2. The two semiconductor laser elements 4 are mounted on the third main surface portion 313 and are disposed between the two capacitors 6. The two semiconductor laser elements 4 are arranged in the x direction, and each emits laser light L in the y direction. Each of the two semiconductor laser elements 4 and the source electrode 53 of the switching element 5 are connected by a plurality of first wires 71.

[0094] Also according to this modification example, the inductance component can be reduced. Further, by providing two semiconductor laser elements 4, it is advantageous for increasing the luminance. In addition, since the two semiconductor laser elements 4 are collectively arranged near the center in the x direction of the semiconductor laser device A22, it is preferable for miniaturizing the optical component that refracts or reflects the light from the semiconductor laser device A22.

[0095] <Second Embodiment, Third Modification Example> FIG. 28 is a plan view of a main part showing a third modification example of the semiconductor laser device A2. FIG. 29 is a bottom view of a main part showing a third modification example of the semiconductor laser device A2.

[0096] The semiconductor laser device A23 of this modification example includes a diode 94, and the other configurations are the same as or similar to those of the above-described semiconductor laser device A2.

[0097] The first main surface portion 311 is disposed on the second surface 24 side in the x direction with respect to the second main surface portion 312. The fourth main surface portion 314 is disposed on the second surface 24 side in the x direction with respect to the second main surface portion 312. The fourth main surface portion 314 is disposed on the third surface 25 side in the y direction with respect to the first main surface portion 311.

[0098] The diode 94 is provided in series between the first main surface portion 311 and the third main surface portion 313, and allows current to flow from the third main surface portion 313 toward the first main surface portion 311. In the illustrated example, the diode 94 is mounted on the first main surface portion 311. The diode 94 overlaps with the switching element 5 in the x-direction view. Also, the diode 94 overlaps with the two capacitors 6 in the x-direction view. The diode 94 does not overlap with the semiconductor laser element 4 in the x-direction view.

[0099] In the illustrated example, the semiconductor laser element 4 is configured to emit the laser beam L in the x-direction, but is not limited thereto, and may be configured to emit the laser beam L in the y-direction, for example. The arrangements of the first main surface portion 311, the second main surface portion 312, the third main surface portion 313, the fifth main surface portion 315, the first back surface portion 321, the second back surface portion 322, the third back surface portion 323, and the second intermediate portion 342 are not limited at all as long as they can form the circuit formed by the illustrated example.

[0100] Also according to this modification example, the inductance component can be reduced. By incorporating the diode 94 into the semiconductor laser device A15, it is particularly advantageous for reducing the inductance component of the conduction path of the above-described current IC flowing through the diode 94. Note that the construction of the laser system using the semiconductor laser device A23 is possible without using the third back surface portion 323, but by providing the third back surface portion 323, the mounting strength and heat dissipation of the semiconductor laser device A23 can be improved.

[0101] <Third Embodiment> FIG. 30 is a main part plan view showing a semiconductor laser device according to the third embodiment of the present disclosure. FIG. 31 is a bottom view showing the semiconductor laser device according to the third embodiment of the present disclosure. In the semiconductor laser device A3 of the present embodiment, the configurations of the main surface portion 31, the back surface portion 32, and the connecting portion 33 are different from those of the above-described embodiments.

[0102] The main surface portion 31 of this embodiment has a first main surface portion 311, a second main surface portion 312, a third main surface portion 313, a fourth main surface portion 314, and a fifth main surface portion 315. The arrangement of the first main surface portion 311, the second main surface portion 312, the third main surface portion 313, and the fourth main surface portion 314 is similar to, for example, the arrangement of the semiconductor laser device A11. However, in this embodiment, the second main surface portion 312 does not have a convex portion 3122 and is rectangular in the view in the z direction. Also, the third main surface portion 313 does not have a convex portion 3133 and is rectangular in the view in the z direction.

[0103] The fifth main surface portion 315 is arranged closer to the fourth surface 26 in the y direction with respect to the third main surface portion 313. The shape of the fifth main surface portion 315 is not particularly limited, and in the illustrated example, it is rectangular with the x direction as the longitudinal direction.

[0104] The semiconductor laser element 4 has a second laser electrode 42 conductively joined to the third main surface portion 313 and is arranged on the third main surface portion 313. The electrode 62 of the capacitor 6 is conductively joined to the third main surface portion 313. The electrode 61 of the capacitor 6 is conductively joined to the fifth main surface portion 315.

[0105] As shown in FIG. 31, the first back surface portion 321 is closer to the third surface 25 in the y direction and closer to the first surface 23 in the x direction. The fourth back surface portion 324 is arranged closer to the second surface 24 in the x direction with respect to the first back surface portion 321.

[0106] The second back surface portion 322 is arranged closer to the fourth surface 26 in the y direction with respect to the first back surface portion 321 and the fourth back surface portion 324. The second back surface portion 322 has a concave portion 3221. The concave portion 3221 is a portion where the part of the second back surface portion 322 on the first surface 23 side in the x direction is recessed toward the second surface 24 side in the x direction.

[0107] The third back surface portion 323 is arranged so as to overlap the concave portion 3221 in both the view in the x direction and the view in the y direction. The shape of the third back surface portion 323 is not particularly limited, and in the illustrated example, it is rectangular.

[0108] The connection part 33 of this embodiment includes a first connection part 331, a second connection part 332, a third connection part 333, a fourth connection part 334, and a connection part 335. The first connection part 331 connects the first main surface part 311 and the first back surface part 321. The fourth connection part 334 connects the fourth main surface part 314 and the fourth back surface part 324. The third connection part 333 connects the third main surface part 313 and the third back surface part 323. The fourth connection part 334 connects the fourth main surface part 314 and the fourth back surface part 324. The connection part 335 connects the fifth main surface part 315 and the back surface part 325.

[0109] As shown in FIG. 1, a plurality of second connection parts 332 are connected to a portion on the fourth surface 26 side in the y direction of the second main surface part 312.

[0110] Also according to this embodiment, the inductance component can be reduced. Further, in this embodiment, the current IL flows through a path formed by the first wire 71, the semiconductor laser element 4, the third main surface part 313, the capacitor 6, the fifth main surface part 315, the connection part 335, and the second back surface part 322. This path forms an annular shape when viewed in the x direction. Therefore, compared with the case where most of the conduction path of the current IL is configured on the same plane, the conduction path can be further shortened.

[0111] Also, since the second connection part 332 is arranged closer to the fourth surface 26 in the y direction, the distance in the y direction between the second connection part 332 and the connection part 335 can be shortened. This is advantageous for shortening the conduction path of the current IL.

[0112] <Third Embodiment, First Variant> FIG. 32 is a partial plan view showing a first variant of the semiconductor laser device A3. FIG. 33 is a bottom view showing a first variant of the semiconductor laser device A3. The semiconductor laser device A31 of this variant is different from the above-described semiconductor laser device A3 in that it includes two semiconductor laser elements 4.

[0113] Also according to this modification example, the inductance component can be reduced. Further, by providing two semiconductor laser elements 4, high luminance can be achieved.

[0114] <Fourth Embodiment> FIG. 34 is a main part plan view showing a semiconductor laser device according to the fourth embodiment of the present disclosure. FIG. 35 is a main part plan view showing a semiconductor laser device according to the fourth embodiment of the present disclosure. FIG. 36 is a bottom view showing a semiconductor laser device according to the fourth embodiment of the present disclosure. FIG. 37 is a cross-sectional view taken along line XXXVII-XXXVII of FIG. 34. In the semiconductor laser device A4 of this embodiment, the conductive portion 3 has a main surface portion 31, a back surface portion 32, a connecting portion 33, and an intermediate portion 34. In FIG. 35, the semiconductor laser element 4, the switching element 5, the main surface portion 31, and the first layer 2A described later are omitted.

[0115] The arrangement configurations of the first main surface portion 311, the second main surface portion 312, the third main surface portion 313, and the fourth main surface portion 314 of the main surface portion 31 are the same as those of the semiconductor laser device A3 described above. The arrangement configurations of the first back surface portion 321, the second back surface portion 322, the third back surface portion 323, and the fourth back surface portion 324 are the same as those of the semiconductor laser device A2 described above.

[0116] The base material 2 of this embodiment is composed of a first layer 2A and a second layer 2B. The first layer 2A and the second layer 2B are laminated on each other in the z direction. The first layer 2A constitutes the main surface 21. The second layer 2B constitutes the back surface 22.

[0117] The intermediate portion 34 is disposed on the main surface 21B of the second layer 2B and is sandwiched between the first layer 2A and the second layer 2B. The intermediate portion 34 includes an intermediate first portion 341, an intermediate second portion 342, an intermediate third portion 343, and an intermediate fourth portion 344. The arrangement configurations of the intermediate first portion 341, the intermediate second portion 342, the intermediate third portion 343, and the intermediate fourth portion 344 are the same as those of the first back surface portion 321, the second back surface portion 322, the third back surface portion 323, and the fourth back surface portion 324.

[0118] In this embodiment, the first connecting portion 331 connects the first main surface portion 311, the first back surface portion 321, and the first intermediate portion 341 to each other. The second connecting portion 332 connects the second main surface portion 312, the second back surface portion 322, and the second intermediate portion 342 to each other. The third connecting portion 333 connects the third main surface portion 313, the third back surface portion 323, and the third intermediate portion 343 to each other. The fourth connecting portion 334 connects the fourth main surface portion 314, the fourth back surface portion 324, and the fourth intermediate portion 344 to each other.

[0119] As shown in FIGS. 35 and 37, in the capacitor 6, the electrode 61 is conductively joined to the third intermediate portion 343, and the electrode 62 is conductively joined to the second intermediate portion 342. Further, in the first layer 2A, a housing portion 25A is formed. The housing portion 25A is a portion capable of housing two capacitors 6. In the illustrated example, a sealing resin 29 is filled between the housing portion 25A and the capacitor 6.

[0120] Also according to this embodiment, the inductance component can be reduced. Further, by mounting the capacitor 6 on the intermediate portion 34, for example, in a configuration where the switching element 5 and the capacitor 6 overlap in the z-direction view. Thereby, the dimensions of the semiconductor laser device A4 in the x-direction and the y-direction can be reduced.

[0121] The path of the current IL is such that the second back surface portion 322 and the second intermediate portion 342 form a parallel path, and the third back surface portion 323 and the third intermediate portion 343 form a parallel path. Thereby, it is possible to reduce the resistance and inductance of the path of the current IL.

[0122] <Fourth Embodiment, First Modification> FIG. 38 is a principal part plan view showing a first modification of the semiconductor laser device A4. FIG. 39 is a principal part plan view showing a first modification of the semiconductor laser device A4. FIG. 40 is a bottom view showing a first modification of the semiconductor laser device A4. In the semiconductor laser device A41 of this modification, the arrangement configurations of the main surface portion 31 and the back surface portion 32 are similar to those of the semiconductor laser device A3 described above. The semiconductor laser element 4, the switching element 5, and the capacitor 6 are arranged on the main surface portion 31.

[0123] The intermediate portion 34 of the present embodiment has an intermediate first portion 341, an intermediate second portion 342, an intermediate third portion 343, and an intermediate fourth portion 344. The arrangement configurations of the intermediate first portion 341, the intermediate second portion 342, the intermediate third portion 343, and the intermediate fourth portion 344 are the same as the arrangement configurations of the first back surface portion 321, the second back surface portion 322, the third back surface portion 323, and the fourth back surface portion 324 of the back surface portion 32. Also in the present embodiment, the second connection portion 332 is connected to the portion on the fourth surface 26 side in the y direction of the second main surface portion 312.

[0124] Also according to the present embodiment, the inductance component can be reduced. Further, by having the intermediate portion 34 similar to the arrangement configuration of the back surface portion 32, it is possible to reduce the resistance and inductance of the path of the current IL while reducing the size of the semiconductor laser device A41.

[0125] <Fifth Embodiment> FIG. 41 is a principal part plan view showing a semiconductor laser device according to the fifth embodiment shown. FIG. 42 is a bottom view showing a semiconductor laser device according to the fifth embodiment of the present disclosure. FIG. 43 is a cross-sectional view taken along line XLIII-XLIII of FIG. 41. The semiconductor laser device A5 of the present embodiment is mainly different from the above-described embodiments in the configuration of the connection portion 33. Note that the semiconductor laser devices A1 to A41 described above can be appropriately modified to have the configuration of the connection portion 33 in the form of the connection portion 33 of the present embodiment.

[0126] The arrangement configurations of the main surface portion 31, the back surface portion 32, the semiconductor laser element 4, the switching element 5, the capacitor 6, the first wire 71, the second wire 72, and the third wire 73 of this embodiment are similar to those of the semiconductor laser device A1 described above.

[0127] As shown in FIG. 41, in this embodiment, the first main surface portion 311 reaches the second surface 24 and the third surface 25. The second main surface portion 312 reaches the first surface 23 and the second surface 24. The third main surface portion 313 reaches the first surface 23, the second surface 24, and the fourth surface 26. The fourth main surface portion 314 reaches the first surface 23 and the third surface 25.

[0128] As shown in FIG. 42, in this embodiment, the first back surface portion 321 reaches the second surface 24 and the third surface 25. The second back surface portion 322 reaches the first surface 23 and the second surface 24. The third back surface portion 323 reaches the first surface 23, the second surface 24, and the fourth surface 26. The fourth back surface portion 324 reaches the first surface 23 and the third surface 25.

[0129] The connection portion 33 of this embodiment is provided by forming a metal plating layer on the inner surface of a groove along the z direction provided in the base material 2, as represented by the first connection portion 331 and the connection portion 335 shown in FIG. 43. Therefore, the connection portion 33 of this embodiment is in contact with any one of the first surface 23, the second surface 24, the third surface 25, and the fourth surface 26.

[0130] A plurality of first connection portions 331 connect the first main surface portion 311 and the first back surface portion 321. The plurality of first connection portions 331 are arranged side by side in the x direction along the third surface 25.

[0131] A plurality of second connection portions 332 connect the second main surface portion 312 and the second back surface portion 322. The plurality of second connection portions 332 are arranged separately on both sides in the x direction. Some of the second connection portions 332 are arranged side by side in the y direction along the first surface 23. Some of the other second connection portions 332 are arranged side by side in the y direction along the second surface 24.

[0132] The plurality of third connection parts 333 connect the third main surface part 313 and the third back surface part 323. The plurality of third connection parts 333 are arranged side by side in the x direction along the fourth surface 26.

[0133] The fourth connection part 334 connects the fourth main surface part 314 and the fourth back surface part 324. The fourth connection part 334 is in contact with the third surface 25.

[0134] Even with such an embodiment, the inductance component can be reduced, and the same effects as those of the semiconductor laser device A1 described above can be achieved.

[0135] <Fifth Embodiment, First Variant> FIG. 44 is a plan view of a main part showing a first variant of the semiconductor laser device A5. FIG. 45 is a bottom view showing a first variant of the semiconductor laser device A5.

[0136] The arrangement configurations of the main surface part 31, the back surface part 32, the semiconductor laser element 4, the switching element 5, the capacitor 6, the first wire 71, the second wire 72, and the third wire 73 of the semiconductor laser device A51 of this variant are similar to those of the semiconductor laser device A11 described above. The configurations of the first connection part 331, the second connection part 332, the third connection part 333, and the fourth connection part 334 of the connection part 33 are the same as those of the semiconductor laser device A5.

[0137] Even with this variant, the inductance component can be reduced, and the same effects as those of the semiconductor laser device A11 described above can be achieved.

[0138] <Fifth Embodiment, Second Variant> FIG. 46 is a plan view of a main part showing a second variant of the semiconductor laser device A5. FIG. 47 is a bottom view showing a second variant of the semiconductor laser device A5.

[0139] The arrangement configurations of the main surface portion 31, the back surface portion 32, the semiconductor laser element 4, the switching element 5, the capacitor 6, the first wire 71, the second wire 72, and the third wire 73 of the semiconductor laser device A52 of this modified example are similar to those of the semiconductor laser device A12 described above. The configurations of the first connection portion 331, the second connection portion 332, the third connection portion 333, and the fourth connection portion 334 of the connection portion 33 are the same as those of the semiconductor laser devices A5 and A51.

[0140] In this modified example, the plurality of third connection portions 333 do not overlap with the two semiconductor laser elements 4 in the view in the y direction, and are provided at positions retracted from the two semiconductor laser elements 4. Further, the third connection portion 333 overlaps with the capacitor 6 in the view in the y direction.

[0141] Also by this modified example, the inductance component can be reduced, and the same effects as those of the semiconductor laser device A12 described above are achieved.

[0142] <Fifth Embodiment, Third Modified Example> FIG. 48 is a main part plan view showing a third modified example of a semiconductor laser device according to the fifth embodiment of the present disclosure. FIG. 49 is a bottom view showing a third modified example of a semiconductor laser device according to the fifth embodiment of the present disclosure.

[0143] The arrangement configurations of the main surface portion 31, the back surface portion 32, the semiconductor laser element 4, the switching element 5, the capacitor 6, the first wire 71, the second wire 72, and the third wire 73 of the semiconductor laser device A53 of this modified example are similar to those of the semiconductor laser device A14 described above. The configurations of the first connection portion 331, the second connection portion 332, the third connection portion 333, and the fourth connection portion 334 of the connection portion 33 are the same as those of the semiconductor laser devices A5, A51, and A52.

[0144] In this modified example, one of the plurality of third connection portions 333 overlaps with the semiconductor laser element 4 in the view in the y direction. Further, the other two third connection portions 333 overlap with the capacitor 6 in the view in the y direction.

[0145] Also according to this modification example, the inductance component can be reduced, and the same effects as those of the semiconductor laser device A14 described above can be achieved.

[0146] <Fifth Embodiment Fourth Modification Example> FIG. 50 is a plan view of a main part showing a fourth modification example of the semiconductor laser device A5. FIG. 51 is a bottom view showing a fourth modification example of the semiconductor laser device A5.

[0147] The arrangement configurations of the main surface portion 31, the back surface portion 32, the semiconductor laser element 4, the switching element 5, the capacitor 6, the first wire 71, the second wire 72, and the third wire 73 of the semiconductor laser device A54 in this modification example are similar to those of the semiconductor laser device A13 described above. The configurations of the first connection portion 331, the second connection portion 332, the third connection portion 333, and the fourth connection portion 334 of the connection portion 33 are the same as those of the semiconductor laser devices A5, A51, A52, and A53.

[0148] In this modification example, one of the plurality of third connection portions 333 overlaps with the two semiconductor laser elements 4 in the y-direction view. Also, the other two third connection portions 333 overlap with the capacitor 6 in the y-direction view.

[0149] Also according to this modification example, the inductance component can be reduced, and the same effects as those of the semiconductor laser device A13 described above can be achieved.

[0150] <Sixth Embodiment> FIG. 52 is a plan view of a main part showing a semiconductor laser device according to the sixth embodiment of the present disclosure. FIG. 53 is a bottom view showing a semiconductor laser device according to the sixth embodiment of the present disclosure.

[0151] The arrangement configurations of the main surface portion 31, the back surface portion 32, the semiconductor laser element 4, the switching element 5, the capacitor 6, the first wire 71, the second wire 72, and the third wire 73 of the semiconductor laser device A6 in this embodiment are similar to those of the semiconductor laser device A2 described above. The configurations of the first connection portion 331, the second connection portion 332, the third connection portion 333, and the fourth connection portion 334 of the connection portion 33 are the same as those of the semiconductor laser devices A5, etc.

[0152] In this embodiment, two third connection portions 333 are arranged spaced apart in the x direction. The two third connection portions 333 overlap the two capacitors 6 in the y-direction view and do not overlap the semiconductor laser element 4. In other words, the semiconductor laser element 4 is located between the two third connection portions 333 in the x direction.

[0153] Even with such an embodiment, the inductance component can be reduced, and the same effects as those of the semiconductor laser device A2 described above can be obtained.

[0154] <Sixth Embodiment, First Modification> FIG. 54 is a plan view of a main part showing a first modification of the semiconductor laser device A6. FIG. 55 is a bottom view of a main part showing a first modification of the semiconductor laser device A6.

[0155] The arrangement configurations of the main surface portion 31, the back surface portion 32, the semiconductor laser element 4, the switching element 5, the capacitor 6, the first wire 71, the second wire 72, and the third wire 73 of the semiconductor laser device A61 of this modification are similar to those of the semiconductor laser device A21 described above. The configurations of the first connection portion 331, the second connection portion 332, the third connection portion 333, and the fourth connection portion 334 of the connection portion 33 are the same as those of the semiconductor laser device A6.

[0156] In this modification, two third connection portions 333 are arranged spaced apart in the x direction. The two third connection portions 333 overlap the two capacitors 6 in the y-direction view and do not overlap the semiconductor laser element 4 and the concave portion 261. In other words, the semiconductor laser element 4 and the concave portion 261 are located between the two third connection portions 333 in the x direction.

[0157] Even with this modification, the inductance component can be reduced, and the same effects as those of the semiconductor laser device A21 described above can be obtained.

[0158] <Seventh Embodiment> FIG. 56 is a plan view of a main part showing a semiconductor laser device according to the seventh embodiment of the present disclosure. FIG. 57 is a bottom view showing the semiconductor laser device according to the seventh embodiment of the present disclosure.

[0159] The arrangement configurations of the main surface portion 31, the back surface portion 32, the semiconductor laser element 4, the switching element 5, the capacitor 6, the first wire 71, the second wire 72, and the third wire 73 of the semiconductor laser device A7 of the present embodiment are similar to those of the semiconductor laser device A3 described above. The configurations of the first connection portion 331, the second connection portion 332, the third connection portion 333, and the fourth connection portion 334 of the connection portion 33 are the same as those of the semiconductor laser devices A6, A61, etc.

[0160] In the present embodiment, the connection portion 33 further includes a connection portion 335. The connection portion 335 connects the main surface fifth portion 315 and the back surface second portion 322. The two connection portions 335 overlap the two capacitors 6 in the y-direction view. The other one connection portion 335 does not overlap the capacitor 6 in the y-direction view. The third connection portion 333 is provided only on the side opposite to the semiconductor laser element 4 in the x-direction.

[0161] Even with such an embodiment, the inductance component can be reduced, and the same effects as those of the semiconductor laser device A3 described above can be obtained. Further, since the third connection portion 333 is provided only on the side opposite to the semiconductor laser element 4 in the x-direction, it is possible to bring the semiconductor laser element 4 closer to the first surface 23, and it is possible to suppress the interference between the laser light L from the semiconductor laser element 4 and the support member 1.

[0162] <Seventh Embodiment, First Modification> FIG. 58 is a plan view of a main part showing a first modification of the semiconductor laser device A7. FIG. 59 is a bottom view showing the first modification of the semiconductor laser device A7.

[0163] The arrangement configurations of the main surface portion 31, the back surface portion 32, the semiconductor laser element 4, the switching element 5, the capacitor 6, the first wire 71, the second wire 72, and the third wire 73 of the semiconductor laser device A71 of this modification example are similar to those of the semiconductor laser device A31 described above. The configurations of the first connection portion 331, the second connection portion 332, the third connection portion 333, the fourth connection portion 334, and the connection portion 335 of the connection portion 33 are the same as those of the semiconductor laser device A7.

[0164] The two connection portions 335 overlap with the two capacitors 6 in the y-direction view. The other one connection portion 335 does not overlap with the capacitor 6 in the y-direction view.

[0165] In this modification example, the two third connection portions 333 are provided only on the side opposite to the two semiconductor laser elements 4 in the x-direction. The two third connection portions 333 are arranged side by side in the y-direction.

[0166] Also in this modification example, the inductance component can be reduced, and the same effects as those of the semiconductor laser device A31 described above can be obtained. Further, since the third connection portion 333 is provided only on the side opposite to the semiconductor laser element 4 in the x-direction, it is possible to bring the semiconductor laser element 4 closer to the first surface 23, and it is possible to suppress the interference between the laser light L from the semiconductor laser element 4 and the support member 1.

[0167] The semiconductor laser device according to the present disclosure is not limited to the above-described embodiments. The specific configurations of each part of the semiconductor laser device according to the present disclosure can be freely designed in various ways.

[0168] The present disclosure includes the configurations related to the following appendices.

[0169] 〔Appendix 1〕 A semiconductor laser element, A switching element having a gate electrode, a source electrode, and a drain electrode, A support member having a conductive portion that constitutes a conduction path to the switching element and the semiconductor laser element, and supporting the semiconductor laser element and the switching element, comprising The conductive portion has a first portion spaced apart from the semiconductor laser element, one or more first wires connected to the source electrode of the switching element and the semiconductor laser element, and one or more second wires connected to the source electrode of the switching element and the first portion of the conductive portion. A semiconductor laser device. 〔Appendix 2〕 The semiconductor laser device according to Appendix 1, wherein an electrical resistance value of one or more of the first wires is smaller than an electrical resistance value of one or more of the second wires. 〔Appendix 3〕 The first wire and the second wire are made of the same material, The semiconductor laser device according to Appendix 2, further comprising a plurality of the first wires, and a number of the plurality of first wires is larger than a number of one or more of the second wires. 〔Appendix 4〕 The switching element has an element body made of a semiconductor material, The element body has an element front surface and an element back surface facing opposite sides in a first direction which is a thickness direction, The gate electrode and the source electrode are disposed on the element front surface, The drain electrode is disposed on the element back surface. The semiconductor laser device according to any one of Appendices 1 to 3. 〔Appendix 5〕 The semiconductor laser element has a first laser electrode disposed on a side where the element front surface faces in the first direction, and a second laser electrode disposed on a side where the element back surface faces, The semiconductor laser device according to Appendix 4, wherein the first wire is connected to the first laser electrode. 〔Appendix 6〕 The support member has a base material having a front surface and a back surface facing opposite sides in the first direction. The semiconductor laser device according to Appendix 5. [Supplementary Note 7] The semiconductor laser device according to Supplementary Note 6, wherein the conductive portion has a main surface portion disposed on the main surface and a back surface portion disposed on the back surface. [Supplementary Note 8] The semiconductor laser device according to Supplementary Note 7, wherein the conductive portion includes a plurality of connecting portions that electrically connect the main surface portion and the back surface portion. [Supplementary Note 9] The semiconductor laser device according to Supplementary Note 8, wherein the main surface portion includes a first main surface portion as the first portion. [Supplementary Note 10] The semiconductor laser device according to Supplementary Note 9, wherein the main surface portion includes a second main surface portion to which the drain electrode of the switching element is conductively joined. [Supplementary Note 11] The semiconductor laser device according to Supplementary Note 10, wherein the main surface portion includes a third main surface portion to which the second laser electrode of the semiconductor laser element is conductively joined. [Supplementary Note 12] The main surface portion includes a fourth main surface portion, The semiconductor laser device according to Supplementary Note 11, further comprising a third wire connected to the gate electrode and the fourth main surface portion. [Supplementary Note 13] The semiconductor laser device according to Supplementary Note 12, further comprising a capacitor electrically interposed between the second main surface portion and the third main surface portion. [Supplementary Note 14] The semiconductor laser device according to Supplementary Note 13, wherein the capacitor is conductively joined to the second main surface portion and the third main surface portion. [Supplementary Note 15] The semiconductor laser device according to Supplementary Note 14, wherein the back surface portion includes a first back surface portion that conducts to the first main surface portion, a second back surface portion that conducts to the second main surface portion, a third back surface portion that conducts to the third main surface portion, and a fourth back surface portion that conducts to the fourth main surface portion. [Supplementary Note 16] The main surface portion includes a fifth main surface portion, The semiconductor laser device according to Supplementary Note 13, wherein the capacitor is conductively joined to the third main surface portion and the fifth main surface portion. [Supplementary Note 17] The back surface portion includes a first back surface portion electrically connected to the first main surface portion, a second back surface portion electrically connected to the second main surface portion and the fifth main surface portion, a third back surface portion electrically connected to the third main surface portion, and a fourth back surface portion electrically connected to the fourth main surface portion. The semiconductor laser device according to Supplementary Note 16. 〔Supplementary Note 18〕 The semiconductor laser device according to Supplementary Note 11, further comprising a diode that is electrically connected in series between the first main surface portion and the third main surface portion and permits current conduction from the third main surface portion to the first main surface portion. 〔Supplementary Note 19〕 The semiconductor laser device according to Supplementary Note 18, wherein the diode is mounted on the first main surface portion.

Claims

1. A semiconductor laser element; a switching element having a gate electrode, a source electrode connected to the semiconductor laser element, and a drain electrode; a support member having a conductive portion forming a conductive path to the switching element and the semiconductor laser element, and supporting the semiconductor laser element and the switching element; Equipped with the conductive portion has a first portion spaced apart from the semiconductor laser element and connected to the source electrode; The switching element has an element body made of a semiconductor material, The element body has an element main surface and an element back surface facing in opposite directions in a first direction which is a thickness direction, the back surface of the element is located between the main surface of the element and the support member, The gate electrode and the source electrode are disposed on the main surface of the semiconductor laser device.

2. A semiconductor laser element, a switching element having a gate electrode, a source electrode connected to the semiconductor laser element, and a drain electrode; a support member having a conductive portion forming a conductive path to the switching element and the semiconductor laser element, and supporting the semiconductor laser element and the switching element; Equipped with the conductive portion has a first portion spaced apart from the semiconductor laser element and connected to the source electrode; The switching element has an element body made of a semiconductor material, The element body has an element main surface and an element back surface facing in opposite directions in a first direction which is a thickness direction, the gate electrode and the source electrode are disposed on a main surface of the element, The drain electrode is disposed on a rear surface of the element.

3. 3. The semiconductor laser device according to claim 1, wherein the support member has a base material having a main surface and a back surface facing opposite to each other in the first direction.

4. 4. The semiconductor laser device according to claim 3, wherein the conductive portion has a main surface portion disposed on the main surface and a back surface portion disposed on the back surface.

5. 5. The semiconductor laser device according to claim 4, wherein the conductive portion includes a plurality of connecting portions that electrically connect the principal surface portion and the rear surface portion.

6. 6. The semiconductor laser device according to claim 4, wherein the main surface portion includes a main surface first portion as the first portion.

7. 7. The semiconductor laser device according to claim 6, wherein the main surface portion includes a second main surface portion to which the drain electrode of the switching element is conductively joined.

8. A semiconductor laser device as described in Claim 7, wherein the semiconductor laser element has a first laser electrode arranged on the side toward which the element main surface faces in the first direction, and a second laser electrode arranged on the side toward which the element back surface faces.

9. 9. The semiconductor laser device according to claim 8, wherein the main surface portion includes a main surface third portion to which the second laser electrode of the semiconductor laser element is conductively joined.

10. the main surface portion includes a fourth main surface portion, 10. The semiconductor laser device according to claim 9, further comprising a third wire connected to the gate electrode and the fourth main surface portion.

11. 11. The semiconductor laser device according to claim 10, further comprising a capacitor electrically interposed between the second principal surface portion and the third principal surface portion.

12. 12. The semiconductor laser device according to claim 11, wherein the capacitor is electrically connected to the second principal surface portion and the third principal surface portion.

13. 13. The semiconductor laser device of claim 12, wherein the back surface portion includes a back surface first portion conductive to the main surface first portion, a back surface second portion conductive to the main surface second portion, a back surface third portion conductive to the main surface third portion, and a back surface fourth portion conductive to the main surface fourth portion.

14. The main surface portion includes a fifth main surface portion, 12. The semiconductor laser device according to claim 11, wherein the capacitor is electrically connected to the third principal surface portion and the fifth principal surface portion.

15. 15. The semiconductor laser device of claim 14, wherein the back surface portion includes a back surface first portion conductive to the main surface first portion, a back surface second portion conductive to the main surface second portion and the main surface fifth portion, a back surface third portion conductive to the main surface third portion, and a back surface fourth portion conductive to the main surface fourth portion.

16. 10. The semiconductor laser device according to claim 9, further comprising a diode that is electrically connected in series between the first main surface portion and the third main surface portion and that allows current to flow from the third main surface portion to the first main surface portion.

17. 17. The semiconductor laser device according to claim 16, wherein the diode is mounted on the first main surface portion.

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