Power module, method for manufacturing the same, electronic device, and power conversion device

Abstract

The power module (1) includes an insulating circuit board (10), a sealing member (17), and a heat dissipation member (20). The insulating circuit board (10) includes an insulating layer (11), a circuit pattern layer (12), and a conductive pattern layer (13). The sealing member (17) includes a first sealing portion (18) and a second sealing portion (19). The heat dissipation member (20) is connected to the conductive pattern layer (13) and protrudes from the first sealing portion (18). In a plan view of the main surface (11a) of the insulating layer (11), the outer peripheral edge of the heat dissipation member (20) is inside the outer peripheral edge of the first sealing portion (18). At least a part of the side surface (20a) of the heat dissipation member (20) is covered by the second sealing portion (19). The first sealing portion (18) is a resin bulk. The second sealing portion (19) is a resin film. The second sealing portion (19) is thinner than the first sealing portion (18).

Description

Technical Field

[0001] The present disclosure relates to a power module, a method for manufacturing the same, an electronic device, and a power conversion device.

Background Art

[0002] Japanese Patent No. 5202333 (Patent Document 1) discloses a heat dissipation substrate including a ceramic substrate, a metal layer, and a heat dissipation member. The metal layer is provided on the ceramic substrate. The heat dissipation member has a first surface and a second surface opposite to the first surface. The first surface is in contact with the metal layer. The area of the first surface is smaller than the area of the second surface.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the heat dissipation substrate described in Patent Document 1, in order to make the area of the first surface of the heat dissipation member smaller than the area of the second surface, it is necessary to process the heat dissipation member into a special shape. Therefore, the cost of the heat dissipation member increases. The present disclosure has been made in view of the above problems, and an object thereof is to provide a power module, an electronic device, and a power conversion device that have improved reliability and can reduce the cost of a cooler attached to the power module.

Means for Solving the Problems

[0005] The power module according to the first aspect of the present disclosure includes an insulating circuit board, a power semiconductor element, a sealing member, and a heat radiating member. The insulating circuit board includes an insulating layer, a circuit pattern layer, and a conductive pattern layer. The insulating layer has a first main surface and a second main surface opposite to the first main surface. The circuit pattern layer is disposed on the first main surface. The conductive pattern layer is disposed on the second main surface. The power semiconductor element is joined to the circuit pattern layer. The sealing member includes a first sealing portion that seals at least a part of the power semiconductor element and the insulating circuit board, and a second sealing portion that protrudes from the first sealing portion. The heat radiating member is connected to the conductive pattern layer and protrudes from the first sealing portion in the stacking direction of the insulating layer and the conductive pattern layer. In a plan view of the first main surface, the outer peripheral edge of the heat radiating member is inside the outer peripheral edge of the first sealing portion. The heat radiating member has a side surface extending in the stacking direction. At least a part of the side surface of the heat radiating member is covered by the second sealing portion. The first sealing portion is a resin bulk. The second sealing portion is a resin film. The second sealing portion is thinner than the first sealing portion.

[0006] The power module according to the second aspect of the present disclosure includes an insulating circuit board, a power semiconductor element, a sealing member, and a heat radiating member. The insulating circuit board includes an insulating layer, a circuit pattern layer, and a conductive pattern layer. The insulating layer has a first main surface and a second main surface opposite to the first main surface. The circuit pattern layer is disposed on the first main surface. The conductive pattern layer is disposed on the second main surface. The power semiconductor element is joined to the circuit pattern layer. The sealing member seals at least a part of the power semiconductor element and the insulating circuit board. The heat radiating member is connected to the conductive pattern layer and protrudes from the sealing member in the stacking direction of the insulating layer and the conductive pattern layer. In a plan view of the first main surface, the outer peripheral edge of the heat radiating member is inside the outer peripheral edge of the sealing member. The heat radiating member has a side surface extending in the stacking direction. At least a part of the side surface of the heat radiating member is exposed from the sealing member.

[0007] The manufacturing method of the power module of the present disclosure includes connecting a heat dissipation member to an insulating circuit board. The insulating circuit board includes an insulating layer, a circuit pattern layer, and a conductive pattern layer. The insulating layer has a first main surface and a second main surface opposite to the first main surface. The circuit pattern layer is disposed on the first main surface. The conductive pattern layer is disposed on the second main surface. The heat dissipation member is connected to the conductive pattern layer. The manufacturing method of the power module of the present disclosure includes sealing at least a part of the insulating circuit board with a sealing member by molding using a mold. The sealing member includes a first sealing portion that seals the insulating circuit board and a second sealing portion that protrudes from the first sealing portion. The heat dissipation member protrudes from the first sealing portion in the stacking direction of the insulating layer and the conductive pattern layer. In a plan view of the first main surface, the outer peripheral edge of the heat dissipation member is inside the outer peripheral edge of the first sealing portion. At least a part of the side surface of the heat dissipation member extending in the stacking direction is covered with the second sealing portion. The first sealing portion is a resin bulk. The second sealing portion is a resin film. The second sealing portion is thinner than the first sealing portion.

[0008] The electronic device of the present disclosure includes the power module of the present disclosure, a joining member, and a cooler attached to the heat dissipation member via the joining member. In a plan view of the first main surface, the outer peripheral edge of the heat dissipation member is inside the outer peripheral edge of the cooler.

[0009] The power conversion device of the present disclosure has the power module of the present disclosure, and includes a main conversion circuit that converts input power and outputs it, and a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit.

Advantages of the Invention

[0010] According to the present disclosure, the power module, the electronic device, and the power conversion device have improved reliability, and the cost of the cooler attached to the power module can be reduced.

Brief Description of the Drawings

[0011]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Figure 17

Figure 18

Figure 19

Figure 20

Figure 21

Embodiments for Carrying Out the Invention

[0012] Hereinafter, embodiments of the present disclosure will be described. The same components are denoted by the same reference numerals, and the description thereof will not be repeated.

[0013] Embodiment 1. Referring to FIGS. 1 and 2, the power module 1 according to Embodiment 1 will be described. The power module 1 mainly includes an insulating circuit board 10, a power semiconductor element 15, a sealing member 17, and a heat radiating member 20.

[0014] The insulating circuit board 10 includes an insulating layer 11, a circuit pattern layer 12, and a conductive pattern layer 13.

[0015] The insulating layer 11 has a main surface 11a, a main surface 11b opposite to the main surface 11a, and a side surface 11c. The side surface 11c is connected to the main surface 11a and the main surface 11b. The side surface 11c extends in the lamination direction of the insulating layer 11 and the conductive pattern layer 13. The insulating layer 11 is, for example, a ceramic substrate. The insulating layer 11 is formed of a ceramic such as, for example, alumina (Al2O3), aluminum nitride (AlN), or silicon nitride (Si3N4).

[0016] The circuit pattern layer 12 is disposed on the main surface 11a and joined to the main surface 11a. The conductive pattern layer 13 is disposed on the main surface 11b and joined to the main surface 11b. The conductive pattern layer 13 includes a side surface 13a and a surface 13b connected to the side surface 13a. The side surface 13a extends in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. The surface 13b is a surface of the conductive pattern layer 13 on the side opposite to the side of the insulating layer 11. The conductive pattern layer 13 includes a corner portion 14 in contact with the insulating layer 11. The corner portion 14 is the proximal end of the side surface 13a to the insulating layer 11. The circuit pattern layer 12 and the conductive pattern layer 13 are formed of a metal such as copper (Cu) or aluminum (Al), for example. The insulating circuit board 10 is, for example, a DBC (Direct Bonded Copper) board in which a copper layer is bonded to a ceramic board.

[0017] The power semiconductor element 15 is, for example, a switching element such as an insulated gate bipolar transistor (IGBT) or a metal oxide semiconductor field effect transistor (MOSFET), or a diode such as a freewheeling diode. The power semiconductor element 15 is mainly formed of a semiconductor material such as silicon (Si) or silicon carbide (SiC). The power semiconductor element 15 is joined to the circuit pattern layer 12 using a conductive joining member 16. The conductive joining member 16 is, for example, solder or a sintered joining member (for example, a sintered body of metal fine particles such as a silver nanoparticle sintered body). A metal wire (not shown) such as an aluminum wire, a copper wire, or a gold wire or a metal lead frame (not shown) is connected to the power semiconductor element 15.

[0018] The sealing member 17 is formed of an insulating resin. The sealing member 17 is formed of a thermosetting resin such as an epoxy resin, for example. The flexural modulus of elasticity of the sealing member 17 is, for example, 10 GPa or more. The sealing member 17 includes a first sealing portion 18 and a second sealing portion 19.

[0019] The first encapsulation portion 18 encapsulates at least a part of the power semiconductor element 15 and the insulating circuit board 10. For example, the first encapsulation portion 18 covers the power semiconductor element 15, the circuit pattern layer 12, the insulating layer 11, and the side surface 13a of the conductive pattern layer 13. The first encapsulation portion 18 is, for example, a resin bulk. The first encapsulation portion 18 has a side surface 18a facing the side surface 11c of the insulating layer 11 and a bottom surface 18b connected to the side surface 18a. The side surface 18a extends, for example, in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. The bottom surface 18b is the surface of the first encapsulation portion 18 proximal to the heat dissipation member 20. The bottom surface 18b may be flush with the surface 13b of the conductive pattern layer 13.

[0020] The second encapsulation portion 19 protrudes from the first encapsulation portion 18 in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. The second encapsulation portion 19 is thinner than the first encapsulation portion 18. The second encapsulation portion 19 has a thickness t2 of, for example, 0.5 mm or less. The second encapsulation portion 19 is, for example, a resin film formed by resin flowing into the gap between the side surface of the mold 30 (see FIG. 4) and the side surface 20a of the heat dissipation member 20 and being cured when the encapsulation member 17 is formed by molding using the mold. The second encapsulation portion 19 has a side surface 19a. The side surface 19a extends, for example, in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. The side surface 19a extends along the side surface 20a of the heat dissipation member 20. The side surface 19a is connected to the bottom surface 18b of the first encapsulation portion 18. The side surface 19a is not connected to the side surface 18a of the first encapsulation portion 18 and is discontinuous with the side surface 18a of the first encapsulation portion 18.

[0021] The heat radiating member 20 transfers the heat from the power semiconductor element 15 to the cooler 25. The heat radiating member 20 is connected to the conductive pattern layer 13. Specifically, the heat radiating member 20 is joined to the surface 13b of the conductive pattern layer 13 using a joining member (not shown) such as solder. The heat radiating member 20 is formed of a metal such as copper (Cu) or aluminum (Al), for example. The heat radiating member 20 may be formed of a material different from that of the conductive pattern layer 13 or may be formed of the same material as the conductive pattern layer 13. For example, the thermal conductivity of the heat radiating member 20 may be greater than the thermal conductivity of the cooler 25, such as when the heat radiating member 20 is formed of copper and the cooler 25 is formed of aluminum. Therefore, the heat radiating member 20 can spread the heat from the power semiconductor element 15 in the direction along the main surface 11a and then transfer the heat to the cooler 25.

[0022] The heat radiating member 20 protrudes from the first sealing portion 18 in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. The protruding height h of the heat radiating member 20 from the first sealing portion 18 is greater than the thickness t1 of the joining member 24. The protruding height h of the heat radiating member 20 from the first sealing portion 18 is, for example, 1 mm or more. In the present embodiment, the protruding height h of the heat radiating member 20 is the thickness of the heat radiating member 20.

[0023] In a plan view of the main surface 11a, the heat radiating member 20 is smaller in size than the first sealing portion 18. Specifically, as shown in FIG. 1, in a plan view of the main surface 11a, the outer peripheral edge of the heat radiating member 20 is inside the outer peripheral edge of the first sealing portion 18. Therefore, as shown in FIG. 2, a space can be provided on the side of the heat radiating member 20 with respect to the first sealing portion 18. In a plan view of the main surface 11a, the heat radiating member 20 is smaller in size than the cooler 25. Specifically, as shown in FIG. 1, in a plan view of the main surface 11a, the outer peripheral edge of the heat radiating member 20 is inside the outer peripheral edge of the cooler 25. Therefore, as shown in FIG. 2, a space can be provided between the first sealing portion 18 and the cooler 25.

[0024] The heat radiating member 20 has a side surface 20a and a cooler joining surface 21. The side surface 20a extends in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. The side surface 20a may be flush with the side surface 13a of the conductive pattern layer 13. At least a part of the side surface 20a is covered by the second sealing portion 19. The periphery 22 of the joint portion 23 between the heat dissipation member 20 and the conductive pattern layer 13 is covered by the sealing member 17 (second sealing portion 19). The entire side surface 20a may be covered by the second sealing portion 19. At least a part of the side surface 20a may be exposed from the second sealing portion 19.

[0025] The cooler joint surface 21 is the joint surface of the cooler 25 in the heat dissipation member 20 and is the surface where the joint member 24 is provided. The cooler joint surface 21 is connected to the side surface 20a. The cooler joint surface 21 is the surface on the side of the heat dissipation member 20 opposite to the side of the insulating circuit board 10. The cooler joint surface 21 is exposed from the sealing member 17.

[0026] The electronic device 2 of the present embodiment includes a power module 1, a joint member 24, and a cooler 25.

[0027] The joint member 24 is disposed between the heat dissipation member 20 and the cooler 25 and joins the heat dissipation member 20 and the cooler 25 to each other. The joint member 24 is, for example, solder or a sintered body of metal fine particles.

[0028] The cooler 25 is, for example, a heat sink. The cooler 25 is formed of a metal such as aluminum (Al) or copper (Cu) or an alloy such as an aluminum alloy. The cooler 25 dissipates the heat from the power module 1 to the outside of the electronic device 2. The power module 1 is attached to the cooler 25 via the joint member 24. The cooler 25 is separated from the first sealing portion 18. There is a space between the cooler 25 and the first sealing portion 18.

[0029] With reference to FIG. 3, an example of a method for manufacturing the power module 1 and the electronic device 2 of the present embodiment will be described.

[0030] Connect the heat dissipation member 20 to the insulating circuit board 10 (step S1). For example, the heat dissipation member 20 is connected to the conductive pattern layer 13 using a joining member (not shown) such as solder.

[0031] Bond the power semiconductor element 15 to the insulating circuit board 10 (step S2). For example, the power semiconductor element 15 is bonded to the circuit pattern layer 12 using a conductive bonding member 16 such as solder or a sintered bonding member (for example, a sintered body of metal fine particles such as a silver nanoparticle sintered body). Connect a metal wire (not shown) such as an aluminum wire, a copper wire, or a gold wire or a metal lead frame (not shown) to the power semiconductor element 15.

[0032] Seal at least a part of the power semiconductor element 15 and the insulating circuit board 10 with a sealing member 17 (step S3). The sealing member 17 is formed, for example, by molding using a mold 30 (see FIG. 4). In this way, the power module 1 is formed.

[0033] Specifically, referring to FIG. 4, a laminate of the insulating circuit board 10, the power semiconductor element 15, and the heat dissipation member 20 is disposed in the cavity of the mold 30. The mold 30 includes a first mold 31 and a second mold 32. A first recess 31a is provided in the first mold 31. A second recess 32a is provided in the second mold 32. The cavity of the mold 30 is formed by the first recess 31a and the second recess 32a. The heat dissipation member 20 is disposed in the first recess 31a. Due to the design tolerance of the first mold 31, a slight gap is generated between the first mold 31 and the heat dissipation member 20. The insulating circuit board 10 and the power semiconductor element 15 are disposed in the second recess 32a. Then, a resin such as a thermosetting resin is injected into the cavity of the mold 30. The resin is cured. The resin injected into the slight gap between the first mold 31 and the heat dissipation member 20 is cured to become the second sealing portion 19. The resin injected into the second recess 32a of the second mold 32 is cured to become the first sealing portion 18. In this way, at least a part of the power semiconductor element 15 and the insulating circuit board 10 is sealed with the sealing member 17, and the power module 1 is formed. The power module 1 is taken out of the mold 30.

[0034] Referring to FIG. 3, the cooler 25 is attached to the heat radiating member 20 via the joining member 24 (step S4). The joining member 24 is, for example, solder or a sintered body of metal fine particles. Thus, the electronic device 2 is obtained.

[0035] While comparing with the power module 1a and the electronic device 2a of the comparative example shown in FIG. 5, the operations of the power module 1 and the electronic device 2 of the present embodiment will be described. The power module 1a and the electronic device 2a of the comparative example are configured in the same manner as the power module 1 and the electronic device 2 of the present embodiment, but are different from the power module 1 and the electronic device 2 of the present embodiment in that they do not include the heat radiating member 20. In the comparative example, the conductive pattern layer 13 is joined to the cooler 25 via the joining member 24. The surface 13b of the conductive pattern layer 13 is the cooler joining surface 21.

[0036] In the comparative example, only the joining member 24 is disposed between the insulating circuit board 10 and the cooler 25. Mainly only the joining member 24 bears the shear strain caused by the difference between the linear expansion coefficient of the insulating layer 11 and the linear expansion coefficient of the cooler 25. As shown in FIG. 6, the joining member 24 is greatly sheared and deformed.

[0037] Therefore, the stress applied by the conductive pattern layer 13 in contact with the joining member 24 to the insulating layer 11 (particularly, the stress applied from the corner 14 of the conductive pattern layer 13 in contact with the insulating layer 11 to the insulating layer 11) increases. Cracks are likely to occur in the insulating layer 11. Further, since the joining member 24 is greatly sheared and deformed, the shear strain at the peripheral portion of the joining member 24 becomes large. Cracks are likely to occur at the peripheral portion of the joining member 24. Thus, the reliability of the power module 1a and the electronic device 2a of the comparative example is reduced.

[0038] In contrast, in the present embodiment, in addition to the joining member 24, a heat radiating member 20 is also disposed between the insulating circuit board 10 and the cooler 25. A space exists on the side of the heat radiating member 20 with respect to the first sealing portion 18, and the side surface 20a of the heat radiating member 20 is covered with a second sealing portion 19 that is thinner than the first sealing portion 18. The heat radiating member 20 can be shear-deformed with almost no restraint by the second sealing portion 19. That is, as shown in FIG. 7, both the heat radiating member 20 and the joining member 24 can be shear-deformed.

[0039] Therefore, both the heat radiating member 20 and the joining member 24 bear the shear strain caused by the difference between the linear expansion coefficient of the insulating layer 11 and the linear expansion coefficient of the cooler 25. The shear deformation of the heat radiating member 20 in the present embodiment is more relaxed than the shear deformation of the joining member 24 in the comparative example. The stress applied by the conductive pattern layer 13 in contact with the heat radiating member 20 to the insulating layer 11 (particularly, the stress applied from the corner portion 14 of the conductive pattern layer 13 in contact with the insulating layer 11 to the insulating layer 11) is reduced. Cracks are less likely to occur in the insulating layer 11. Further, since both the heat radiating member 20 and the joining member 24 bear the above shear strain, the shear deformation of the joining member 24 in the present embodiment is more relaxed than the shear deformation of the joining member 24 in the comparative example. The shear strain at the peripheral portion of the joining member 24 is reduced. Cracks are less likely to occur at the peripheral portion of the joining member 24. Thus, the reliability of the power module 1 and the electronic device 2 in the present embodiment is improved.

[0040] The power module 1 and the electronic device 2 in the present embodiment include a heat radiating member 20. In order to provide a space between the cooler 25 and the first sealing portion 18, it is not necessary to process the cooler 25 into a special shape. Therefore, the cost of the cooler 25 attached to the power module 1 can be reduced.

[0041] Referring to FIG. 8, in a modification of the present embodiment, the heat radiating member 20 and the conductive pattern layer 13 may be a single member such as a single metal member.

[0042] The effects of the power module 1 and the electronic device 2 in the present embodiment will be described. The power module 1 of the present embodiment includes an insulating circuit board 10, a power semiconductor element 15, a sealing member 17, and a heat dissipation member 20. The insulating circuit board 10 includes an insulating layer 11, a circuit pattern layer 12, and a conductive pattern layer 13. The insulating layer 11 has a first main surface (main surface 11a) and a second main surface (main surface 11b) opposite to the first main surface. The circuit pattern layer 12 is disposed on the first main surface. The conductive pattern layer 13 is disposed on the second main surface. The power semiconductor element 15 is joined to the circuit pattern layer 12. The sealing member 17 includes a first sealing portion 18 that seals at least a part of the power semiconductor element 15 and the insulating circuit board 10, and a second sealing portion 19 that protrudes from the first sealing portion 18. The heat dissipation member 20 is connected to the conductive pattern layer 13 and protrudes from the first sealing portion 18 in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. In a plan view of the first main surface, the outer peripheral edge of the heat dissipation member 20 is inside the outer peripheral edge of the first sealing portion 18. The heat dissipation member 20 has a side surface 20a extending in the stacking direction. At least a part of the side surface 20a of the heat dissipation member 20 is covered by the second sealing portion 19. The first sealing portion 18 is a resin bulk. The second sealing portion 19 is a resin film. The second sealing portion 19 is thinner than the first sealing portion 18.

[0043] Therefore, both the heat dissipation member 20 and the joining member 24 bear the shear strain caused by the difference between the linear expansion coefficient of the insulating layer 11 and the linear expansion coefficient of the cooler 25. The shear deformation of the heat dissipation member 20 and the shear deformation of the joining member 24 are relaxed. The stress applied by the conductive pattern layer 13 in contact with the heat dissipation member 20 to the insulating layer 11 decreases. Cracks are less likely to occur in the insulating layer 11. Also, the shear strain at the peripheral portion of the joining member 24 becomes small. Cracks are less likely to occur at the peripheral portion of the joining member 24. The reliability of the power module 1 is improved.

[0044] In the power module 1 of the present embodiment, the second sealing portion 19 has a thickness of 0.5 mm or less.

[0045] Therefore, the heat dissipation member 20 can undergo shear deformation with little restraint by the second sealing portion 19. That is, both the heat dissipation member 20 and the joining member 24 can undergo shear deformation. Both the heat dissipation member 20 and the joining member 24 bear the shear stress caused by the difference between the linear expansion coefficient of the insulating layer 11 and the linear expansion coefficient of the cooler 25. The shear deformation of the heat dissipation member 20 and the shear deformation of the joining member 24 are alleviated. The stress applied by the conductive pattern layer 13 in contact with the heat dissipation member 20 to the insulating layer 11 decreases. It becomes difficult for cracks to occur in the insulating layer 11. Also, the shear stress at the peripheral portion of the joining member 24 becomes smaller. It becomes difficult for cracks to occur at the peripheral portion of the joining member 24. The reliability of the power module 1 is improved.

[0046] Since the power module 1 of the present embodiment includes the heat dissipation member 20, it is not necessary to process the cooler 25 into a special shape. Therefore, the cost of the cooler 25 attached to the power module 1 can be reduced.

[0047] In the power module 1 of the present embodiment, the protruding height h of the heat dissipation member 20 from the first sealing portion 18 is 1 mm or more.

[0048] Since the thickness of the heat dissipation member 20 that can undergo shear deformation with little restraint by the sealing member 17 increases, the shear deformation of the heat dissipation member 20 and the shear deformation of the joining member 24 are alleviated. The stress applied by the conductive pattern layer 13 in contact with the heat dissipation member 20 to the insulating layer 11 decreases. It becomes difficult for cracks to occur in the insulating layer 11. Also, the shear stress at the peripheral portion of the joining member 24 becomes smaller. It becomes difficult for cracks to occur at the peripheral portion of the joining member 24. The reliability of the power module 1 is improved.

[0049] In the power module 1 of the present embodiment, the heat dissipation member 20 is joined to the conductive pattern layer 13.

[0050] Therefore, as the heat dissipation member 20, a member formed of the same material as the conductive pattern layer 13 can be used, or a member formed of a material different from that of the conductive pattern layer 13 can be used. The degree of freedom in the design of the power module 1 is improved.

[0051] In the power module 1 of the present embodiment, the heat dissipation member 20 is formed of a material different from that of the conductive pattern layer 13.

[0052] Therefore, it becomes possible to make the heat dissipation member 20 bear more of the shear stress caused by the difference between the linear expansion coefficient of the insulating layer 11 and the linear expansion coefficient of the cooler 25. Cracks are less likely to occur in the joining member 24 and the insulating layer 11. The reliability of the power module 1 is improved.

[0053] In the power module 1 of the present embodiment, the heat dissipation member 20 and the conductive pattern layer 13 are single members.

[0054] Since there is no bonding interface between the heat dissipation member 20 and the conductive pattern layer 13, mechanical breakage between the heat dissipation member 20 and the conductive pattern layer 13 is less likely to occur. The reliability of the power module 1 is improved.

[0055] In the power module 1 of the present embodiment, the heat dissipation member 20 is formed of the same material as the conductive pattern layer 13.

[0056] The cost of the heat dissipation member 20 is reduced, and the cost of the power module 1 can be reduced. The manufacturing method of the power module 1 according to the present embodiment includes connecting the heat dissipation member 20 to the insulating circuit board 10 (step S1). The insulating circuit board 10 includes an insulating layer 11, a circuit pattern layer 12, and a conductive pattern layer 13. The insulating layer 11 has a first main surface (main surface 11a) and a second main surface (main surface 11b) opposite to the first main surface. The circuit pattern layer 12 is disposed on the first main surface. The conductive pattern layer 13 is disposed on the second main surface. The heat dissipation member 20 is connected to the conductive pattern layer 13. The manufacturing method of the power module 1 according to the present embodiment includes sealing at least a part of the insulating circuit board 10 with a sealing member 17 by molding using a mold 30 (step S3). The sealing member 17 includes a first sealing portion 18 that seals the insulating circuit board 10 and a second sealing portion 19 that protrudes from the first sealing portion 18. The heat dissipation member 20 protrudes from the first sealing portion 18 in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. In a plan view of the first main surface, the outer peripheral edge of the heat dissipation member 20 is inside the outer peripheral edge of the first sealing portion 18. The heat dissipation member 20 has a side surface 20a extending in the stacking direction. At least a part of the side surface 20a of the heat dissipation member 20 is covered with the second sealing portion 19. The first sealing portion 18 is a resin bulk. The second sealing portion is a resin film. The second sealing portion 19 is thinner than the first sealing portion 18.

[0057] Therefore, both the heat dissipation member 20 and the joining member 24 bear the shear strain caused by the difference between the linear expansion coefficient of the insulating layer 11 and the linear expansion coefficient of the cooler 25. The shear deformation of the heat dissipation member 20 and the shear deformation of the joining member 24 are alleviated. The stress applied by the conductive pattern layer 13 in contact with the heat dissipation member 20 to the insulating layer 11 decreases. It becomes difficult for cracks to occur in the insulating layer 11. Also, the shear strain at the peripheral portion of the joining member 24 becomes small. It becomes difficult for cracks to occur at the peripheral portion of the joining member 24. The reliability of the power module 1 is improved.

[0058] Since the power module 1 obtained by the manufacturing method of the power module 1 of the present embodiment includes the heat radiating member 20, it is not necessary to process the cooler 25 into a special shape. Therefore, the cost of the cooler 25 attached to the power module 1 can be reduced. Further, by molding using the mold 30, the first sealing portion 18 and the second sealing portion 19 can be formed together. The manufacturing cost of the power module 1 can be reduced.

[0059] In the manufacturing method of the power module 1 of the present embodiment, the second sealing portion 19 has a thickness of 0.5 mm or less.

[0060] Therefore, the heat radiating member 20 can be sheared and deformed with little restraint on the second sealing portion 19. That is, both the heat radiating member 20 and the joining member 24 can be sheared and deformed. Both the heat radiating member 20 and the joining member 24 bear the shear strain caused by the difference between the linear expansion coefficient of the insulating layer 11 and the linear expansion coefficient of the cooler 25. The shear deformation of the heat radiating member 20 and the shear deformation of the joining member 24 are relaxed. The stress applied by the conductive pattern layer 13 in contact with the heat radiating member 20 to the insulating layer 11 is reduced. It becomes difficult for cracks to occur in the insulating layer 11. Further, the shear strain at the peripheral edge of the joining member 24 is reduced. It becomes difficult for cracks to occur at the peripheral edge of the joining member 24. The reliability of the power module 1 is improved.

[0061] The electronic device 2 of the present embodiment includes a power module 1, a joining member 24, and a cooler 25 attached to the heat radiating member 20 via the joining member 24. In a plan view of the first main surface (main surface 11a), the outer peripheral edge of the heat radiating member 20 is inside the outer peripheral edge of the cooler 25.

[0062] Therefore, both the heat dissipation member 20 and the joining member 24 bear the shear strain caused by the difference between the linear expansion coefficient of the insulating layer 11 and the linear expansion coefficient of the cooler 25. The shear deformation of the heat dissipation member 20 and the shear deformation of the joining member 24 are alleviated. The stress applied by the conductive pattern layer 13 in contact with the heat dissipation member 20 to the insulating layer 11 decreases. Cracks are less likely to occur in the insulating layer 11. Also, the shear strain at the peripheral portion of the joining member 24 becomes smaller. Cracks are less likely to occur at the peripheral portion of the joining member 24. The reliability of the electronic device 2 is improved.

[0063] Since the electronic device 2 of the present embodiment includes the heat dissipation member 20, it is not necessary to process the cooler 25 into a special shape. Therefore, the cost of the cooler 25 attached to the power module 1 can be reduced. The cost of the electronic device 2 can be reduced.

[0064] Embodiment 2. Referring to FIGS. 9 and 10, the power module 1 and the electronic device 2 of Embodiment 2 will be described. The power module 1 and the electronic device 2 of the present embodiment have the same configuration as the power module 1 and the electronic device 2 of Embodiment 1, but are mainly different in the following points.

[0065] In the present embodiment, the sealing member 17 does not include the second sealing portion 19 (see FIGS. 1 and 2) and is composed of the first sealing portion 18. The sealing member 17 is, for example, a resin bulk. At least a part of the side surface 20a of the heat dissipation member 20 extending in the stacking direction of the insulating layer 11 and the conductive pattern layer 13 protrudes from the sealing member 17 and is exposed from the sealing member 17. All of the side surface 20a of the heat dissipation member 20 may protrude from the sealing member 17 and may be exposed from the sealing member 17. The protruding height h of the heat dissipation member 20 from the sealing member 17 is larger than the thickness t1 of the joining member 24. The protruding height h of the heat dissipation member 20 from the sealing member 17 is, for example, 1 mm or more.

[0066] In a plan view of the main surface 11a, the heat radiating member 20 is smaller in size than the sealing member 17. Specifically, as shown in FIG. 9, in a plan view of the main surface 11a, the outer peripheral edge of the heat radiating member 20 is inside the outer peripheral edge of the sealing member 17. Therefore, as shown in FIG. 10, a space can be provided on the side of the heat radiating member 20 with respect to the sealing member 17. In a plan view of the main surface 11a, the heat radiating member 20 is smaller in size than the cooler 25. Specifically, as shown in FIG. 9, in a plan view of the main surface 11a, the outer peripheral edge of the heat radiating member 20 is inside the outer peripheral edge of the cooler 25. Therefore, as shown in FIG. 10, a space can be provided between the sealing member 17 and the cooler 25. The cooler 25 is separated from the sealing member 17. There is a space between the cooler 25 and the sealing member 17.

[0067] Referring to FIG. 11, a first example of the manufacturing method of the power module 1 and the electronic device 2 according to the present embodiment will be described. The first example of the manufacturing method of the power module 1 and the electronic device 2 according to the present embodiment is the same as the example of the manufacturing method of the power module 1 and the electronic device 2 according to the first embodiment, but is different from the example of the manufacturing method of the power module 1 and the electronic device 2 according to the first embodiment in that it further includes exposing the side surface 20a of the heat radiating member 20 (step S5).

[0068] Specifically, in step S5, the second sealing portion 19 formed in the sealing step (step S3) is removed. For example, the second sealing portion 19 is removed by irradiating the second sealing portion 19 with laser light. Thus, the side surface 20a of the heat radiating member 20 is exposed from the sealing member 17.

[0069] Referring to FIG. 12, a second example of the manufacturing method of the power module 1 and the electronic device 2 according to the present embodiment will be described.

[0070] The power semiconductor element 15 is joined to the insulating circuit board 10 (step S2). Step S2 of the second example of the manufacturing method of the power module 1 and the electronic device 2 according to the present embodiment is the same as step S2 of the example of the manufacturing method of the power module 1 and the electronic device 2 according to the first embodiment.

[0071] Seal the power semiconductor element 15 and at least a part of the insulating circuit board 10 with a sealing member 17 (step S3). As shown in FIG. 13, the sealing member 17 is formed, for example, by molding using a mold 30. In the first mold 31 of the mold 30 used in the second example of the manufacturing method of the power module 1 and the electronic device 2 of the present embodiment, the first recess 31a (see FIG. 4) is not provided. The cavity of the mold 30 is the second recess 32a provided in the second mold 32. Place the laminate of the insulating circuit board 10 and the power semiconductor element 15 in the cavity of the mold 30. Inject a resin such as a thermosetting resin into the cavity of the mold 30. Cure the resin. The resin cures to become the sealing member 17. Place the laminate of the insulating circuit board 10, the power semiconductor element 15, and the heat radiating member 20 in the cavity of the mold 30. In this way, at least a part of the power semiconductor element 15 and the insulating circuit board 10 is sealed with the sealing member 17.

[0072] Referring to FIG. 12, connect the heat radiating member 20 to the insulating circuit board 10 (step S1). For example, the heat radiating member 20 is connected to the conductive pattern layer 13 using a joining member (not shown) such as solder. In this way, the power module 1 is formed. In the second example of the manufacturing method of the power module 1 and the electronic device 2 of the present embodiment, since the heat radiating member 20 is connected to the insulating circuit board 10 after the sealing member 17 is formed, step S5 of the first example of the manufacturing method of the power module 1 and the electronic device 2 of the present embodiment is unnecessary.

[0073] Then, attach the cooler 25 to the heat radiating member 20 using the joining member 24 (step S4). Step S4 of the second example of the manufacturing method of the power module 1 and the electronic device 2 of the present embodiment is the same as step S4 of the example of the manufacturing method of the power module 1 and the electronic device 2 of Embodiment 1. In this way, the electronic device 2 is obtained.

[0074] Referring to FIG. 14, in a modification of the present embodiment, the heat radiating member 20 and the conductive pattern layer 13 may be a single member such as a single metal member.

[0075] The power module 1 and the electronic device 2 of this embodiment exhibit the following effects similar to those of the power module 1 and the electronic device 2 of Embodiment 1.

[0076] The power module 1 and the electronic device 2 of this embodiment include an insulating circuit board 10, a power semiconductor element 15, a sealing member 17, and a heat radiating member 20. The insulating circuit board 10 includes an insulating layer 11, a circuit pattern layer 12, and a conductive pattern layer 13. The insulating layer 11 has a first main surface (main surface 11a) and a second main surface (main surface 11b) opposite to the first main surface. The circuit pattern layer 12 is disposed on the first main surface. The conductive pattern layer 13 is disposed on the second main surface. The power semiconductor element 15 is joined to the circuit pattern layer 12. The sealing member 17 seals at least a part of the power semiconductor element 15 and the insulating circuit board 10. The heat radiating member 20 is connected to the conductive pattern layer 13 and protrudes from the sealing member 17 in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. In a plan view of the first main surface, the outer peripheral edge of the heat radiating member 20 is inside the outer peripheral edge of the first sealing portion 18. The heat radiating member 20 has a side surface 20a extending in the stacking direction. At least a part of the side surface 20a of the heat radiating member 20 is exposed from the sealing member 17.

[0077] Therefore, both the heat radiating member 20 and the joining member 24 bear the shear strain caused by the difference between the linear expansion coefficient of the insulating layer 11 and the linear expansion coefficient of the cooler 25. The shear deformation of the heat radiating member 20 and the shear deformation of the joining member 24 are alleviated. The stress applied by the conductive pattern layer 13 in contact with the heat radiating member 20 to the insulating layer 11 is reduced. Cracks are less likely to occur in the insulating layer 11. Also, the shear strain at the peripheral portion of the joining member 24 is reduced. Cracks are less likely to occur at the peripheral portion of the joining member 24. The reliability of the power module 1 is improved.

[0078] Since the power module 1 of this embodiment includes the heat radiating member 20, it is not necessary to process the cooler 25 into a special shape. Therefore, the cost of the cooler 25 attached to the power module 1 can be reduced.

[0079] In the power module 1 and the electronic device 2 of the present embodiment, all of the side surfaces 20a of the heat radiating member 20 are exposed from the sealing member 17.

[0080] Since the thickness of the heat radiating member 20 that can be sheared without being restricted by the sealing member 17 increases, the shear deformation of the heat radiating member 20 and the shear deformation of the joining member 24 are alleviated. The stress applied by the conductive pattern layer 13 in contact with the heat radiating member 20 to the insulating layer 11 decreases. It becomes difficult for cracks to occur in the insulating layer 11. Also, the shear strain at the peripheral edge of the joining member 24 becomes small. It becomes difficult for cracks to occur at the peripheral edge of the joining member 24. The reliability of the power module 1 is improved.

[0081] In the power module 1 and the electronic device 2 of the present embodiment, the protruding height h of the heat radiating member 20 from the sealing member 17 is 1 mm or more.

[0082] Since the thickness of the heat radiating member 20 that can be sheared without being restricted by the sealing member 17 increases, the shear deformation of the heat radiating member 20 and the shear deformation of the joining member 24 are alleviated. The stress applied by the conductive pattern layer 13 in contact with the heat radiating member 20 to the insulating layer 11 decreases. It becomes difficult for cracks to occur in the insulating layer 11. Also, the shear strain at the peripheral edge of the joining member 24 becomes small. It becomes difficult for cracks to occur at the peripheral edge of the joining member 24. The reliability of the power module 1 is improved.

[0083] In the power module 1 and the electronic device 2 of the present embodiment, the heat radiating member 20 and the conductive pattern layer 13 are a single member.

[0084] Since there is no bonding interface between the heat radiating member 20 and the conductive pattern layer 13, mechanical breakage between the heat radiating member 20 and the conductive pattern layer 13 is less likely to occur. The reliability of the power module 1 is improved.

[0085] Embodiment 3. Referring to FIGS. 15 and 16, the power module 1 and the electronic device 2 according to Embodiment 3 will be described. The power module 1 and the electronic device 2 of this embodiment have the same configuration as the power module 1 and the electronic device 2 of Embodiment 2, but are mainly different in the following points.

[0086] The heat radiating member 20 of this embodiment is smaller in size than the heat radiating member 20 of Embodiment 2. Specifically, in a plan view of the main surface 11a, the outer peripheral edge of the heat radiating member 20 is inside the outer peripheral edge of the conductive pattern layer 13. The side surface 20a of the heat radiating member 20 is inside the side surface 13a of the conductive pattern layer 13. Therefore, the stress applied by the conductive pattern layer 13 in contact with the heat radiating member 20 to the insulating layer 11 (particularly, the stress applied from the corner 14 of the conductive pattern layer 13 in contact with the insulating layer 11 to the insulating layer 11) is reduced. It becomes difficult for cracks to occur in the insulating layer 11. The reliability of the power module 1 and the electronic device 2 is improved.

[0087] Embodiment 4. Referring to FIGS. 17 and 18, the power module 1 and the electronic device 2 according to Embodiment 4 will be described. The power module 1 and the electronic device 2 of this embodiment have the same configuration as the power module 1 and the electronic device 2 of Embodiment 2, but are mainly different in the following points.

[0088] The heat radiating member 20 of this embodiment is larger in size than the heat radiating member 20 of Embodiment 2. Specifically, in a plan view of the main surface 11a, the outer peripheral edge of the heat radiating member 20 is outside the outer peripheral edge of the conductive pattern layer 13. The side surface 20a of the heat radiating member 20 is outside the side surface 13a of the conductive pattern layer 13. Therefore, the heat radiating member 20 spreads the heat from the power semiconductor element 15 in the direction along the main surface 11a, and then transfers the heat to the cooler 25. Even if the thermal conductivity of the cooler 25 is lower than the thermal conductivity of the heat radiating member 20, the power module 1 can be efficiently cooled.

[0089] Embodiment 5. Referring to FIG. 19, the power module 1 and the electronic device 2 of Embodiment 5 will be described. The power module 1 and the electronic device 2 of this embodiment have the same configuration as the power module 1 and the electronic device 2 of Embodiment 2, but mainly differ in the following points.

[0090] In this embodiment, the bottom surface 18b of the sealing member 17 is closer to the cooler joint surface 21 of the heat dissipation member 20 than the surface 13b of the conductive pattern layer 13 in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. The region of the side surface 20a of the heat dissipation member 20 close to the conductive pattern layer 13 is covered by the sealing member 17. The periphery 22 of the joint portion 23 between the heat dissipation member 20 and the conductive pattern layer 13 is covered by the sealing member 17. Therefore, the joint portion 23 between the heat dissipation member 20 and the conductive pattern layer 13 is mechanically reinforced by the sealing member 17. The reliability of the joint portion 23 between the heat dissipation member 20 and the conductive pattern layer 13 is improved. The reliability of the power module 1 and the electronic device 2 is improved.

[0091] A part of the side surface 20a of the heat dissipation member 20 (specifically, the region of the side surface 20a of the heat dissipation member 20 close to the cooler joint surface 21) protrudes from the sealing member 17 and is exposed from the sealing member 17. The protruding height h of the heat dissipation member 20 from the sealing member 17 is greater than the thickness t1 of the joint member 24. The protruding height h of the heat dissipation member 20 from the sealing member 17 is, for example, 1 mm or more. In this embodiment, the protruding height h of the heat dissipation member 20 is smaller than the thickness of the heat dissipation member 20.

[0092] Embodiment 6. Referring to FIG. 20, the power module 1 and the electronic device 2 of Embodiment 6 will be described. The power module 1 and the electronic device 2 of this embodiment have the same configuration as the power module 1 and the electronic device 2 of Embodiment 2, but mainly differ in the following points.

[0093] In the power module 1 and the electronic device 2 of this embodiment, the peripheral region 21a of the cooler joint surface 21 of the heat dissipation member 20 is chamfered. The peripheral region 21a of the cooler joint surface 21 is not particularly limited, and it may be a C chamfer or an R chamfer. Therefore, the thickness of the peripheral portion of the joint member 24 increases. Cracks are less likely to occur in the peripheral portion of the joint member 24. The reliability of the power module 1 and the electronic device 2 is improved.

[0094] Embodiment 7. This embodiment applies any one of the power modules 1 of the above-described Embodiments 1 to 6 and their modified examples to a power conversion device. Although the present disclosure is not limited to a specific power conversion device, hereinafter, as Embodiment 7, a case where any one of the power modules 1 of Embodiments 1 to 6 and their modified examples is applied to a three-phase inverter will be described.

[0095] The power conversion system shown in FIG. 21 includes a power source 100, a power conversion device 200, and a load 300. The power source 100 is a DC power source and supplies DC power to the power conversion device 200. The power source 100 is not particularly limited, and for example, it may be composed of a DC system, a solar cell, or a storage battery, or it may be composed of a rectifier circuit or an AC / DC converter connected to an AC system. The power source 100 may be composed of a DC / DC converter that converts DC power output from a DC system into predetermined power.

[0096] The power conversion device 200 is a three-phase inverter connected between the power source 100 and the load 300, converts the DC power supplied from the power source 100 into AC power, and supplies the AC power to the load 300. As shown in FIG. 21, the power conversion device 200 includes a main conversion circuit 201 that converts DC power into AC power and outputs it, and a control circuit 203 that outputs a control signal for controlling the main conversion circuit 201 to the main conversion circuit 201.

[0097] The load 300 is a three-phase motor driven by the AC power supplied from the power conversion device 200. Note that the load 300 is not limited to a specific application, but is a motor mounted on various electrical devices, and is used, for example, as a motor for hybrid vehicles, electric vehicles, railway vehicles, elevators, or air conditioning equipment.

[0098] Hereinafter, the details of the power conversion device 200 will be described. The main conversion circuit 201 includes a switching element (not shown) and a freewheeling diode (not shown). By switching the voltage supplied from the power source 100 by the switching element, the main conversion circuit 201 converts the DC power supplied from the power source 100 into AC power and supplies it to the load 300. Although there are various specific circuit configurations of the main conversion circuit 201, the main conversion circuit 201 of the present embodiment is a two-level three-phase full-bridge circuit and can be composed of six switching elements and six freewheeling diodes connected in anti-parallel to each of the switching elements. As each switching element and each freewheeling diode of the main conversion circuit 201, the power semiconductor element 15 included in any one of the power modules 1 of the above-described Embodiments 1 to 6 and their modified examples can be applied. As the power module 202 constituting the main conversion circuit 201, any one of the power modules 1 of the above-described Embodiments 1 to 6 and their modified examples can be applied. The six switching elements are connected in series in pairs of two switching elements to form upper and lower arms, and each upper and lower arm constitutes each phase (U phase, V phase, and W phase) of the full-bridge circuit. Then, the output terminals of each upper and lower arm, that is, the three output terminals of the main conversion circuit 201, are connected to the load 300.

[0099] Further, the main conversion circuit 201 includes a drive circuit (not shown) for driving each switching element. The drive circuit may be built into the power module 202 or provided outside the power module 202. The drive circuit generates a drive signal for driving the switching element included in the main conversion circuit 201 and supplies the drive signal to the control electrode of the switching element of the main conversion circuit 201. Specifically, in accordance with the control signal from the control circuit 203, a drive signal for turning on the switching element and a drive signal for turning off the switching element are output to the control electrodes of the respective switching elements.

[0100] The control circuit 203 controls the switching elements of the main conversion circuit 201 so that power is supplied to the load 300. Specifically, based on the power to be supplied to the load 300, the time (on-time) during which each switching element of the main conversion circuit 201 should be in the on state is calculated. For example, the main conversion circuit 201 can be controlled by PWM control in which the on-time of the switching element is modulated according to the voltage to be output to the load 300. Then, a control command (control signal) is output to the drive circuit included in the main conversion circuit 201 so that an on signal is output to the switching element that should be in the on state and an off signal is output to the switching element that should be in the off state at each time point. The drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element in accordance with this control signal.

[0101] In the power conversion device 200 of the present embodiment, any one of the power modules 1 of Embodiments 1 to 6 and their modified examples is applied as the power module 202 included in the main conversion circuit 201. Therefore, the power conversion device 200 of the present embodiment has improved reliability.

[0102] In this embodiment, an example of applying the present disclosure to a two-level three-phase inverter has been described. However, the present disclosure is not limited to this, and the present disclosure can be applied to various power conversion devices. In this embodiment, a two-level power conversion device has been used, but a three-level power conversion device or a multi-level power conversion device may also be used. When the power conversion device supplies power to a single-phase load, the present disclosure may be applied to a single-phase inverter. When the power conversion device supplies power to a DC load or the like, the present disclosure may be applied to a DC / DC converter or an AC / DC converter.

[0103] The power conversion device to which the present disclosure is applied is not limited to the case where the load is a motor. For example, it can be incorporated into a power supply device for an electric discharge machine or a laser processing machine, or a power supply device for an induction heating cooker or a contactless power feeding system. The power conversion device to which the present disclosure is applied can further be used as a power conditioner for a solar power generation system or a power storage system.

[0104] The disclosed embodiments 1-7 and their modified examples should be considered to be illustrative in all respects and not restrictive. At least two of the disclosed embodiments 1-7 and their modified examples may be combined as long as there is no contradiction. The scope of the present disclosure is indicated by the claims rather than the above description, and it is intended to include all modifications within the meaning and scope equivalent to the claims.

Description of Reference Numerals

[0105] 1, 1a Power module, 2, 2a Electronic device, 10 Insulated circuit board, 11 Insulation layer, 11a, 11b Main surface, 11c Side surface, 12 Circuit pattern layer, 13 Conductive pattern layer, 13a Side surface, 13b Surface, 14 Corner, 15 Power semiconductor element, 16 Conductive joining member, 17 Sealing member, 18 First sealing portion, 18a Side surface, 18b Bottom surface, 19 Second sealing portion, 19a Side surface, 20 Heat dissipation member, 20a Side surface, 21 Cooler joining surface, 21a Peripheral region, 22 Periphery, 23 Joining portion, 24 Joining member, 25 Cooler, 30 Mold, 31 First mold, 31a First recess, 32 Second mold, 32a Second recess, 100 Power supply, 200 Power conversion device, 201 Main conversion circuit, 202 Power module, 203 Control circuit, 300 Load.

Claims

1. An insulating circuit board including an insulating layer having a first main surface and a second main surface opposite to the first main surface, a circuit pattern layer disposed on the first main surface, and a conductive pattern layer disposed on the second main surface, a power semiconductor element joined to the circuit pattern layer, a sealing member including a first sealing portion that seals the power semiconductor element and at least a part of the insulating circuit board, and a second sealing portion protruding from the first sealing portion, and a heat radiating member connected to the conductive pattern layer and protruding from the first sealing portion in a stacking direction of the insulating layer and the conductive pattern layer, wherein in a plan view of the first main surface, an outer peripheral edge of the heat radiating member is inside an outer peripheral edge of the first sealing portion, the heat radiating member has a side surface extending in the stacking direction, at least a part of the side surface of the heat radiating member is covered by the second sealing portion, the first sealing portion is a resin bulk, the second sealing portion is a resin film, and the second sealing portion is thinner than the first sealing portion, a power module.

2. The power module according to claim 1, wherein the second sealing portion has a thickness of 0.5 mm or less.

3. An insulating circuit board including an insulating layer having a first main surface and a second main surface opposite to the first main surface, a circuit pattern layer disposed on the first main surface, and a conductive pattern layer disposed on the second main surface, a power semiconductor element joined to the circuit pattern layer, a sealing member that seals the power semiconductor element and at least a part of the insulating circuit board, and a heat radiating member connected to the conductive pattern layer and protruding from the sealing member in a stacking direction of the insulating layer and the conductive pattern layer, wherein in a plan view of the first main surface, an outer peripheral edge of the heat radiating member is inside an outer peripheral edge of the sealing member, the heat radiating member has a side surface extending in the stacking direction, at least a part of the side surface of the heat radiating member is exposed from the sealing member, and in the plan view of the first main surface, the outer peripheral edge of the heat radiating member is inside an outer peripheral edge of the conductive pattern layer, a power module.

4. The power module according to claim 1 or claim 2, wherein a protruding height of the heat radiating member from the first sealing portion is 1 mm or more.

5. The power module according to claim 3, wherein all of the side surfaces of the heat radiating member are exposed from the sealing member.

6. The power module according to claim 3 or claim 5, wherein the protruding height of the heat radiating member from the sealing member is 1 mm or more.

7. The power module according to claim 1 or claim 3, wherein the heat radiating member is joined to the conductive pattern layer.

8. The heat radiating member is joined to the conductive pattern layer, The power module according to claim 3, wherein the periphery of the joint portion between the heat radiating member and the conductive pattern layer is covered with the sealing member.

9. The power module according to claim 1 or claim 3, wherein the heat radiating member and the conductive pattern layer are a single member.

10. The power module according to claim 1 or claim 3, wherein the heat radiating member is formed of a material different from that of the conductive pattern layer.

11. The power module according to claim 1 or claim 3, wherein the heat radiating member is formed of the same material as the conductive pattern layer.

12. The heat radiating member has a cooler joint surface on the side opposite to the side of the insulating circuit board, The power module according to claim 1 or claim 3, wherein the peripheral region of the cooler joint surface is chamfered.

13. Comprising connecting a heat radiating member to an insulating circuit board, the insulating circuit board includes an insulating layer having a first main surface and a second main surface opposite to the first main surface, a circuit pattern layer disposed on the first main surface, and a conductive pattern layer disposed on the second main surface, the heat radiating member is connected to the conductive pattern layer, Comprising sealing at least a part of the insulating circuit board with a sealing member by molding using a mold, The sealing member includes a first sealing portion that seals the insulating circuit board and a second sealing portion that protrudes from the first sealing portion, The heat radiating member protrudes from the first sealing portion in the stacking direction of the insulating layer and the conductive pattern layer, In a plan view of the first main surface, the outer peripheral edge of the heat radiating member is inside the outer peripheral edge of the first sealing portion, The heat radiating member has a side surface extending in the stacking direction, At least a part of the side surface of the heat radiating member is covered with the second sealing portion, The first sealing portion is a resin bulk, The second sealing portion is a resin film, A method for manufacturing a power module, wherein the second sealing portion is thinner than the first sealing portion.

14. The method for manufacturing a power module according to claim 13, wherein the second sealing portion has a thickness of 0.5 mm or less.

15. The power module according to claim 1 or claim 3, a joining member, and a cooler attached to the heat dissipation member via the joining member, wherein, in the plan view of the first main surface, the outer peripheral edge of the heat dissipation member is inside the outer peripheral edge of the cooler, an electronic device.

16. A power module, a joining member, and a cooler, wherein the power module includes an insulating circuit board having a first main surface and a second main surface opposite to the first main surface, a circuit pattern layer disposed on the first main surface, and a conductive pattern layer disposed on the second main surface, a power semiconductor element joined to the circuit pattern layer, a sealing member that seals at least a part of the power semiconductor element and the insulating circuit board, and a heat dissipation member connected to the conductive pattern layer and protruding from the sealing member in the stacking direction of the insulating layer and the conductive pattern layer, wherein, in the plan view of the first main surface, the outer peripheral edge of the heat dissipation member is inside the outer peripheral edge of the sealing member and inside the outer peripheral edge of the cooler, the heat dissipation member has a side surface extending in the stacking direction, all of the side surfaces of the heat dissipation member are exposed from the sealing member, the protruding height of the heat dissipation member from the sealing member is 1 mm or more, and the cooler is attached to the heat dissipation member via the joining member, an electronic device.

17. A power conversion device having the power module according to claim 1 or claim 3, and including a main conversion circuit that converts input power and outputs the converted power, and a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit.

Images