Light-emitting device

Abstract

This light-emitting device has a light-emitting-element array in which a plurality of light-emitting elements are arrayed, and a dummy concave mirror that surrounds the light-emitting-element array. The light-emitting element comprises: a layered structure in which a first compound semiconductor layer, an active layer, and a second compound semiconductor layer are layered; a first light-reflecting layer formed on a base surface; and a second light-reflecting layer. A first protruding part is formed in the portion of the base surface on which the first light-reflecting layer that functions as a concave mirror is formed, the first protruding part being formed using a second surface of the first compound semiconductor layer as a reference. A second protruding part is formed on the portion of an extension of the base surface on which the dummy concave mirror is formed, the second protruding part being formed using the second surface of the first compound semiconductor layer as a reference.

Description

Technical Field

[0001] The present disclosure relates to a light-emitting device.

Background Art

[0002] In a light-emitting element composed of a surface-emitting laser element (VCSEL), generally, laser oscillation occurs by resonating laser light between two optical reflection layers (Distributed Bragg Reflector layers, DBR layers). And, in a surface-emitting laser element having a stacked structure in which an n-type compound semiconductor layer (first compound semiconductor layer), an active layer (light-emitting layer) composed of a compound semiconductor, and a p-type compound semiconductor layer (second compound semiconductor layer) are stacked, generally, a second electrode made of a transparent conductive material is formed on the p-type compound semiconductor layer, and a second optical reflection layer composed of a stacked structure of an insulating material is formed on the second electrode. Further, on the n-type compound semiconductor layer (when the n-type compound semiconductor layer is formed on a conductive substrate, on the exposed surface of the substrate), a first optical reflection layer composed of a stacked structure of an insulating material and a first electrode are formed.

[0003] A structure in which the first optical reflection layer also functions as a concave mirror is disclosed in, for example, WO2018 / 083877A1. Here, in the technology disclosed in this international publication, with respect to the active layer, for example, a convex portion is formed in the n-type compound semiconductor layer, and the first optical reflection layer is formed on the convex portion.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

[0005] Incidentally, in the production of a light-emitting element array in which a plurality of light-emitting elements are arranged, for example, when etching the n-type compound semiconductor layer to form a convex portion in the n-type compound semiconductor layer, the n-type compound semiconductor layer located at the outermost peripheral portion of the light-emitting element array is more easily etched than the light-emitting elements arranged at the center portion, and there is a risk that the shape of the first light reflection layer may differ between the light-emitting elements arranged at the outermost peripheral portion and the light-emitting elements arranged at the center portion of the light-emitting element array. Further, in a light-emitting element array in which a plurality of light-emitting elements composed of surface-emitting laser elements are arranged in a two-dimensional matrix, when a plurality of light-emitting elements are simultaneously driven under the same driving conditions, the light intensity of the light-emitting elements arranged at the outermost peripheral portion may be greater than the light intensity of the light-emitting elements arranged in other regions. And when these phenomena occur, the uniformity of the light intensity of the entire light-emitting element array deteriorates.

[0006] Therefore, a first object of the present disclosure is to provide a light-emitting device having a configuration and structure that can ensure the uniformity of processing of the entire light-emitting element array. Further, a second object of the present disclosure is to provide a light-emitting device having a configuration and structure that can ensure the uniformity of light intensity of the entire light-emitting element array.

[0007] A first light-emitting device according to a first aspect of the present disclosure for achieving the above first object is a light-emitting element array in which a plurality of light-emitting elements are arranged, and a dummy concave mirror portion surrounding the light-emitting element array, and has The light-emitting element is a first compound semiconductor layer having a first surface and a second surface facing the first surface, an active layer facing the second surface of the first compound semiconductor layer, and a second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface, a stacked structure in which are stacked, a first light reflection layer formed on the base surface located on the first surface side of the first compound semiconductor layer, and a second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape, and includes, On a portion of the base surface where a first light reflection layer that functions as a concave mirror is formed, a first convex portion is formed with respect to the second surface of the first compound semiconductor layer, On a portion of the extension of the base surface where a dummy concave mirror portion is formed, a second convex portion is formed with respect to the second surface of the first compound semiconductor layer and in the region where the dummy concave mirror portion is provided, at least the active layer and the second compound semiconductor layer are not provided . The light-emitting device according to the second aspect of the present disclosure for achieving the above first object is a light-emitting element array in which a plurality of light-emitting elements are arranged, and a dummy concave mirror portion surrounding the light-emitting element array having The light-emitting element is a first compound semiconductor layer having a first surface and a second surface facing the first surface, an active layer facing the second surface of the first compound semiconductor layer, and a second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface are laminated to form a laminated structure a first light reflection layer formed on the base surface located on the first surface side of the first compound semiconductor layer, and a second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape comprising In the portion of the base surface where the first light reflection layer functioning as a concave mirror is formed, a first convex portion is formed with reference to the second surface of the first compound semiconductor layer, In the extending portion of the base surface where the dummy concave mirror portion is formed, a second convex portion is formed with reference to the second surface of the first compound semiconductor layer, When the height of the first convex portion provided on the base surface is H1 and the height of the second convex portion provided on the extending portion of the base surface is H2, H1 < H2 is satisfied The light-emitting device according to the third aspect of the present disclosure for achieving the above first object is a light-emitting element array in which a plurality of light-emitting elements are arranged, and a dummy concave mirror portion surrounding the light-emitting element array having The light-emitting element is a first compound semiconductor layer having a first surface and a second surface facing the first surface, an active layer facing the second surface of the first compound semiconductor layer, and a second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface are laminated to form a laminated structure a first light reflection layer formed on the base surface located on the first surface side of the first compound semiconductor layer, and a second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape comprising In the portion of the base surface where the first light reflection layer functioning as a concave mirror is formed, a first convex portion is formed with reference to the second surface of the first compound semiconductor layer, In the extending portion of the base surface where the dummy concave mirror portion is formed, a second convex portion is formed with reference to the second surface of the first compound semiconductor layer, The plurality of light-emitting elements are arranged in a two-dimensional matrix in a first direction and a second direction different from the first direction The end portions of the base surface extending parallel to the second direction are referred to as the first end portion and the third end portion, the end portions of the base surface extending parallel to the first direction are referred to as the second end portion and the fourth end portion, and when the height of the first convex portion provided on the base surface is H1, the height of the second convex portion provided on the extending portion of the base surface extending from the first end portion is H2-A, and the height of the second convex portion provided on the extending portion of the base surface extending from the third end portion is H2-C, H2-A > H2-C > H1 is satisfied. The light-emitting device according to the fourth aspect of the present disclosure for achieving the above first object is a light-emitting element array in which a plurality of light-emitting elements are arranged, and a dummy concave mirror portion surrounding the light-emitting element array, and has the light-emitting element is a first compound semiconductor layer having a first surface and a second surface facing the first surface, an active layer facing the second surface of the first compound semiconductor layer, and a second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface, which are laminated into a laminated structure, a first light reflection layer formed on the base surface located on the first surface side of the first compound semiconductor layer, and a second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape, and is provided with a first convex portion is formed on the portion of the base surface where the first light reflection layer functioning as a concave mirror is formed, with reference to the second surface of the first compound semiconductor layer, a second convex portion is formed on the extending portion of the base surface where the dummy concave mirror portion is formed, with reference to the second surface of the first compound semiconductor layer, the plurality of light-emitting elements are arranged in a two-dimensional matrix in a first direction and a second direction different from the first direction, the end portions of the base surface extending parallel to the second direction are referred to as the first end portion and the third end portion, the end portions of the base surface extending parallel to the first direction are referred to as the second end portion and the fourth end portion, and when the height of the first convex portion provided on the base surface is H1, the height of the second convex portion provided on the extending portion of the base surface extending from the first end portion is H2-A, and the height of the second convex portion provided on the extending portion of the base surface extending from the third end portion is H2-C, H2-A > H1 > H2-C is satisfied. The light-emitting device according to the fifth aspect of the present disclosure for achieving the above first object is a light-emitting element array in which a plurality of light-emitting elements are arranged, and a dummy concave mirror portion surrounding the light-emitting element array, and has the light-emitting element is a first compound semiconductor layer having a first surface and a second surface facing the first surface, an active layer facing the second surface of the first compound semiconductor layer, and A second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface, is laminated to form a laminated structure, a first light reflection layer formed on a base surface located on the first surface side of the first compound semiconductor layer, and a second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape, and is provided with a first convex portion is formed with reference to the second surface of the first compound semiconductor layer at a portion of the base surface where the first light reflection layer functioning as a concave mirror is formed, a second convex portion is formed with reference to the second surface of the first compound semiconductor layer at a portion of an extension of the base surface where a dummy concave mirror portion is formed, when the height of the first convex portion provided on the base surface is H1 and the height of the second convex portion provided on the extension of the base surface is H2, H2 < H1 is satisfied. The light emitting device according to the sixth aspect of the present disclosure for achieving the above first object is a light emitting element array in which a plurality of light emitting elements are arranged, and a dummy concave mirror portion surrounding the light emitting element array, and has the light emitting element is a first compound semiconductor layer having a first surface and a second surface facing the first surface, an active layer facing the second surface of the first compound semiconductor layer, and a second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface, is laminated to form a laminated structure, a first light reflection layer formed on a base surface located on the first surface side of the first compound semiconductor layer, and a second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape, and is provided with a first convex portion is formed with reference to the second surface of the first compound semiconductor layer at a portion of the base surface where the first light reflection layer functioning as a concave mirror is formed, a second convex portion is formed with reference to the second surface of the first compound semiconductor layer at a portion of an extension of the base surface where a dummy concave mirror portion is formed, a concave portion is formed with reference to the second surface of the first compound semiconductor layer at a portion of the base surface of the light emitting element where the first light reflection layer is not formed.

[0008] For the present disclosure to achieve the above-mentioned second object, No. 7 the light-emitting device according to an aspect of the present disclosure includes a light-emitting element array in which a plurality of light-emitting elements are arranged, and dummy light-emitting elements surrounding the light-emitting element array, and has wherein the light-emitting element and the dummy light-emitting element have a first compound semiconductor layer having a first surface and a second surface facing the first surface, an active layer facing the second surface of the first compound semiconductor layer, and a second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface, and a stacked structure in which they are stacked, and is provided with the light-emitting element further includes a first light reflection layer formed on the base surface located on the first surface side of the first compound semiconductor layer, and a second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape, and is provided with On the portion of the base surface formed with the first light reflection layer that functions as a concave mirror, a first convex portion is formed with reference to the second surface of the first compound semiconductor layer. The dummy light emitting element further includes a dummy first light reflection layer formed of a dummy concave mirror portion formed on an extending portion of the base surface located on the first surface side of the first compound semiconductor layer, and a second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape. The dummy light emitting element is provided with On the portion of the extending portion of the base surface formed with the dummy first light reflection layer, a second convex portion is formed with reference to the second surface of the first compound semiconductor layer. The dummy light emitting element does not emit light even when current is passed through the laminated structure. without in the dummy light emitting element, the value of the radius of curvature of the center portion of the second convex portion provided on the extension of the base surface is a value less than the value of the resonator length .

Brief Description of the Drawings

[0009]

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MODE FOR CARRYING OUT THE INVENTION

[0010] Hereinafter, the present disclosure will be described based on examples with reference to the drawings. However, the present disclosure is not limited to the examples, and various numerical values and materials in the examples are merely illustrative. The description will be made in the following order. 1. General description of a light-emitting device according to the first aspect to the second aspect of the present disclosure 2. Example 1 (light-emitting device according to the first aspect of the present disclosure) 3. Example 2 (modification of Example 1) 4. Example 3 (another modification of Example 1) 5. Example 4 (yet another modification of Example 1) 6. Example 5 (light-emitting device according to the second aspect of the present disclosure) 7. Example 6 (modification of Examples 1 to 5) 8. Example 7 (modification of Examples 1 to 6) 9. Example 8 (Modification of Examples 1 to 7) 10. Others

[0011] 〈Description of the light-emitting device according to the first aspect to the second aspect of the present disclosure, general description〉 In the light-emitting device according to the first aspect of the present disclosure, the plurality of light-emitting elements can be driven under the same driving conditions simultaneously, but the present disclosure is not limited thereto, and they can be driven individually or grouped under the same driving conditions or different driving conditions.

[0012] In the light-emitting device according to the first aspect of the present disclosure including the above preferred form, in the region where the dummy concave mirror portion is provided, at least the active layer and the second compound semiconductor layer may not be provided. More specifically, the active layer, the second compound semiconductor layer, and the second light reflection layer may not be provided. That is, the region where the dummy concave mirror portion is provided does not have the function as a light-emitting element.

[0013] Furthermore, in the light-emitting device according to the first aspect of the present disclosure including the various preferred forms described above, when the height of the first convex portion provided on the base surface is H1 and the height of the second convex portion provided on the extending portion of the base surface is H2, H1 < H2 a configuration that satisfies this can be adopted. For the sake of convenience, such a configuration is referred to as 'the light-emitting device according to the first-A aspect of the present disclosure'. And in this case, furthermore, 1.1 ≦ H2 / H1 Preferably, 1.1 ≦ H2 / H1 ≦ 500 a configuration that satisfies this can be adopted.

[0014] In the following description, the portion of the base surface where the first convex portion is provided may be referred to as 'the first portion', and the portion of the base surface surrounding the first convex portion may be referred to as 'the second portion'.

[0015] In the light-emitting device according to the first aspect of the present disclosure, if the second portion is flat, the height from the virtual plane (hereinafter referred to as the "reference virtual plane") including the second portion to the top of the first convex portion is defined as the height H1 of the first convex portion. Further, if the second portion has an uneven shape, the height from the virtual plane (reference virtual plane) including the region of the second portion closest to the second surface of the first compound semiconductor layer (the region at the bottommost part of the second portion) to the top of the first convex portion is defined as the height H1 of the first convex portion.

[0016] Also, in the light-emitting device according to the first aspect to the second aspect of the present disclosure, the height H2 of the second convex portion refers to the distance from the perpendicular bisector of the line segment connecting the point where the second convex portion on the extending portion of the base surface rises (the point closest to the light-emitting element array, hereinafter referred to as the "first point" for convenience) and the point farthest from the light-emitting element array (hereinafter referred to as the "second point" for convenience) to the intersection of the perpendicular passing through the perpendicular bisector and the second convex portion when the intersection is obtained.

[0017] Alternatively, in the light-emitting device according to the first aspect of the present disclosure including the various preferred forms described above, the plurality of light-emitting elements are arranged in a two-dimensional matrix in a first direction and a second direction different from the first direction. The ends of the base surface extending parallel to the second direction are referred to as the first end and the third end, the ends of the base surface extending parallel to the first direction are referred to as the second end and the fourth end, the height of the first convex portion provided on the base surface is H1, the height of the second convex portion provided on the extending portion of the base surface is H2-A, and the height of the second convex portion provided on the extending portion of the base surface extending from the third end is H2-C. When this is the case, H2-A > H2-C > H1 A configuration that satisfies this can be adopted. Such a configuration is hereinafter referred to as the "light-emitting device according to the first-B aspect of the present disclosure" for convenience. And in this case, further, when the height of the second convex portion provided on the extending portion of the base surface extending from the second end is H2-B and the height of the second convex portion provided on the extending portion of the base surface extending from the fourth end is H2-D, the values of H2-B and H2-D can be configured to decrease from the first end toward the third end.

[0018] Alternatively, in the light-emitting device according to the first aspect of the present disclosure including the various preferred forms described above, the plurality of light-emitting elements are arranged in a two-dimensional matrix in a first direction and a second direction different from the first direction. The ends of the base surface extending parallel to the second direction are referred to as a first end and a third end, the ends of the base surface extending parallel to the first direction are referred to as a second end and a fourth end, the height of the first convex portion provided on the base surface is H1, the height of the second convex portion provided on the extending portion of the base surface extending from the first end is H2-A, and the height of the second convex portion provided on the extending portion of the base surface extending from the third end is H2-C. When H2-A > H1 > H2-C a configuration satisfying the above can be adopted. For convenience, such a configuration is referred to as the "light-emitting device according to the 1-C aspect of the present disclosure". And in this case, further, when the height of the second convex portion provided on the extending portion of the base surface extending from the second end is H2-B and the height of the second convex portion provided on the extending portion of the base surface extending from the fourth end is H2-D, the values of H2-B and H2-D can be configured to decrease from the first end toward the third end.

[0019] Alternatively, in the light-emitting device according to the first aspect of the present disclosure including the various preferred forms described above, when the height of the first convex portion provided on the base surface is H1 and the height of the second convex portion provided on the extending portion of the base surface is H2, H2 < H1 a configuration satisfying the above can be adopted. For convenience, such a configuration is referred to as the "light-emitting device according to the 1-D aspect of the present disclosure". And in this case, further, H2 / H1 ≤ 0.9 preferably, 0.02 ≤ H2 / H1 ≤ 0.9 a configuration satisfying the above can be adopted.

[0020] In the light-emitting device according to the second aspect of the present disclosure, in the dummy light-emitting element, the value of the radius of curvature of the center portion of the second convex portion provided on the extending portion of the base surface can be a value less than the value of the resonator length. And, in the light-emitting device according to the second aspect of the present disclosure including such a preferable form, the plurality of light-emitting elements and the dummy light-emitting elements can be driven under the same driving conditions at the same time. However, it is not limited thereto, and they can also be driven individually or grouped under the same driving conditions or different driving conditions. Further, various preferable forms and configurations in the light-emitting device according to the first aspect of the present disclosure described above can be appropriately applied to the light-emitting device according to the second aspect of the present disclosure. Incidentally, actually, when the light generated in the active layer is reflected by the light reflection layer, it penetrates to some extent inside the light reflection layer. In this specification, the "resonator length" is defined as the distance between the surface of the first light reflection layer facing the laminated structure and the surface of the second light reflection layer facing the laminated structure.

[0021] Furthermore, in the light-emitting device according to the first aspect to the second aspect of the present disclosure including various preferable forms and configurations described above, in the portion (second portion) of the base surface of the light-emitting element where the first light reflection layer is not formed, a concave portion can be formed with reference to the second surface of the first compound semiconductor layer. Incidentally, such a form is referred to as a "light-emitting element of the first configuration" for convenience. And, in this case, further, from the portion of the base surface where the first light reflection layer of the light-emitting element arranged at the outermost peripheral portion of the light-emitting element array is formed to the portion of the extending portion of the base surface extending from that portion, a concave portion can be formed with reference to the second surface of the first compound semiconductor layer. However, it is not limited to such a form, and the portion (second portion) of the base surface of the light-emitting element where the first light reflection layer is not formed can also be flat. In this case, further, from the portion of the base surface where the first light reflection layer of the light-emitting element arranged at the outermost peripheral portion of the light-emitting element array is formed to the portion of the extending portion of the base surface extending from that portion, it can also be flat.

[0022] In the light-emitting element of the first configuration, it is preferable that the base surface is differentiable. That is, the base surface can be in a smooth form. Here, "smooth" is a term in analysis. For example, if a real variable function f(x) is differentiable at a < x < b and f'(x) is continuous, it can be said that it is continuously differentiable in a slogan-like manner, and it can also be expressed as smooth.

[0023] Here, when the base surface is represented by z = f(x, y), the differential value on the base surface is ∂z / ∂x = [∂f(x, y) / ∂x]y ∂z / ∂y = [∂f(x, y) / ∂y]x and can be obtained as follows.

[0024] In the light-emitting device according to the first aspect to the second aspect of the present disclosure, the first light reflection layer is formed on the first convex portion of the base surface. However, the portion of the first convex portion of the base surface on which the first light reflection layer is formed is the first portion as described above. The second portion extends from the first portion (the first convex portion), and in some cases, an extension portion of the first light reflection layer is formed on the second portion, and in some cases, an extension portion of the first light reflection layer is not formed on the second portion.

[0025] In the light-emitting element of the first configuration, the boundary between the first portion and the second portion is (1) When the first light reflection layer does not extend on the second portion, the outer peripheral portion of the first light reflection layer (2) When the first light reflection layer extends on the second portion, the portion where the inflection point exists on the base surface extending from the first portion to the second portion and can be defined as such.

[0026] In the light-emitting element of the first configuration, with respect to the second surface of the first compound semiconductor layer, the second portion can have a downwardly convex shape. The light-emitting element of the first configuration having such a structure is referred to as the 'light-emitting element of the first-A configuration'. In the light-emitting element of the first-A configuration, the central portion of the first portion can be located on the vertex of a square lattice, or alternatively, can be located on the vertex of an equilateral triangular lattice. In the former case, the central portion of the second portion can be located on the vertex of a square lattice, and in the latter case, the central portion of the second portion can be located on the vertex of an equilateral triangular lattice.

[0027] In the light-emitting element of the first-A configuration, the shape of [from the peripheral portion to the central portion of the first portion / the second portion] is (A) [upwardly convex shape / downwardly convex shape] (B) [upwardly convex shape / continuing to a line segment from the downwardly convex shape] (C) [upwardly convex shape / continuing from the upwardly convex shape to the downwardly convex shape] (D) [upwardly convex shape / continuing from the upwardly convex shape to the downwardly convex shape and then to a line segment] (E) [upwardly convex shape / continuing from a line segment to the downwardly convex shape] (F) [upwardly convex shape / continuing from a line segment to the downwardly convex shape and then to a line segment] There are cases like this. In the light-emitting element, there may be a case where the base surface terminates at the central portion of the second portion.

[0028] Alternatively, with respect to the second surface of the first compound semiconductor layer, the second portion can have a structure having a downwardly convex shape and an upwardly convex shape extending from the downwardly convex shape toward the central portion of the second portion. The light-emitting element of the first configuration having such a structure is referred to as the 'light-emitting element of the first-B configuration'. In the light-emitting element of the first-B configuration, when the distance from the second surface of the first compound semiconductor layer to the central portion of the first portion is L1st and the distance from the second surface of the first compound semiconductor layer to the central portion of the second portion is L2nd, L2nd > L1st It can be configured to satisfy, and when the radius of curvature of the center of the first part (i.e., the radius of curvature of the first light reflecting layer) is R1 and the radius of curvature of the center of the second part is R2nd, R1 > R2nd It can be configured to satisfy. Note that as the value of L2nd / L1st, although not limited, 1 < L2nd / L1st ≦ 100 can be cited. And as the value of R1 / R2nd, although not limited, 1 < R1 / R2nd ≦ 100 can be cited.

[0029] In the light emitting element of the first-B configuration including the above preferred configuration, the center of the first part can be located on the vertex of a square lattice. In this case, the center of the second part can be located on the vertex of a square lattice. Alternatively, the center of the first part can be located on the vertex of an equilateral triangle lattice. In this case, the center of the second part can be located on the vertex of an equilateral triangle lattice.

[0030] In the light emitting element of the first-B configuration, the shape of [from the peripheral part to the center part of the first part / second part] is (A) [Convex upward shape / Continuing from concave downward shape to convex upward shape] (B) [Convex upward shape / Continuing from convex upward shape to concave downward shape and then to convex upward shape] (C) [Convex upward shape / Continuing from a line segment to concave downward shape and then to convex upward shape] There are such cases.

[0031] Alternatively, with reference to the second surface of the first compound semiconductor layer, the second part can have an annular convex shape surrounding the first part and a concave downward shape extending from the annular convex shape toward the first part. The light emitting element of the first configuration with such a configuration is called the 'light emitting element of the first-C configuration'.

[0032] In the light-emitting element having the 1-C structure, when the distance from the second surface of the first compound semiconductor layer to the center of the first portion is L1st and the distance from the second surface of the first compound semiconductor layer to the top of the annular convex shape of the second portion is L2nd’, L2nd’>L1st A configuration that satisfies this can be adopted. Also, when the radius of curvature of the center of the first portion (i.e., the radius of curvature of the first light reflection layer) is R1 and the radius of curvature of the top of the annular convex shape of the second portion is R2nd, R1>R2nd A configuration that satisfies this can be adopted. Note that, as the value of L2nd’ / L1sT, although not limited, 1<L2nd’ / L1st≦100 can be cited. Also, as the value of R1 / R2nd’, although not limited, 1<R1 / R2nd’≦100 can be cited.

[0033] In the light-emitting element having the 1-C structure, the shape of [from the first portion / to the center from the peripheral portion of the second portion] is (A) [Convex upward / Continuing from the concave downward shape to the convex upward shape and the concave downward shape] (B) [Convex upward / Continuing from the concave downward shape to the convex upward shape, the concave downward shape, and a line segment] (C) [Convex upward / Continuing from the convex upward shape to the concave downward shape, the convex upward shape, and the concave downward shape] (D) [Convex upward / Continuing from the convex upward shape to the concave downward shape, the convex upward shape, the concave downward shape, and a line segment] (E) [Convex upward / Continuing from a line segment to the concave downward shape, the convex upward shape, and the concave downward shape] (F) [Convex upward / Continuing from a line segment to the concave downward shape, the convex upward shape, the concave downward shape, and a line segment] There are cases like this. Note that in the light-emitting element, there may be a case where the base surface terminates at the center of the second portion.

[0034] In a light-emitting element having a first-B configuration or a first-C configuration including the preferred configuration described above, bumps may be disposed on a portion on the second surface side of the second compound semiconductor layer facing the convex-shaped portion in the second portion. Alternatively, in a light-emitting element having a first configuration including the preferred configuration described above, bumps may be disposed on a portion on the second surface side of the second compound semiconductor layer facing the central portion of the first portion. Examples of the bumps include gold (Au) bumps, solder bumps, and indium (In) bumps, and the method of disposing the bumps can be a well-known method. Specifically, the bumps are provided on a second pad electrode (described later) provided on the second electrode, or alternatively, on an extension portion of the second pad electrode.

[0035] Alternatively, a brazing material can be used instead of the bumps. Examples of the brazing material include In (indium: melting point 157 °C); indium-gold-based low-melting-point alloys; tin (Sn)-based high-temperature solders such as Sn80Ag20 (melting point 220 to 370 °C) and Sn95Cu5 (melting point 227 to 370 °C); lead (Pb)-based high-temperature solders such as Pb97.5Ag2.5 (melting point 304 °C), Pb94.5Ag5.5 (melting point 304 to 365 °C), and Pb97.5Ag1.5Sn1.0 (melting point 309 °C); zinc (Zn)-based high-temperature solders such as Zn95Al5 (melting point 380 °C); tin-lead-based standard solders such as Sn5Pb95 (melting point 300 to 314 °C) and Sn2Pb98 (melting point 316 to 322 °C); brazing materials such as Au88Ga12 (melting point 381 °C) (all of the above subscripts represent atomic %).

[0036] Furthermore, in the light-emitting device according to the first aspect to the second aspect of the present disclosure including the preferred forms and configurations described above, the first surface of the first compound semiconductor layer can be configured as the base surface. For the sake of convenience, the light-emitting element having such a configuration is referred to as the 'light-emitting element of the second configuration'. Alternatively, a compound semiconductor substrate is disposed between the first surface of the first compound semiconductor layer and the first light reflection layer, and the base surface can be configured from the surface of the compound semiconductor substrate. For the sake of convenience, the light-emitting element having such a configuration is referred to as the 'light-emitting element of the third configuration'. In this case, for example, the compound semiconductor substrate can be configured of a GaN substrate. As the GaN substrate, any of a polar substrate, a semi-polar substrate, and a non-polar substrate may be used. As the thickness of the compound semiconductor substrate, 5×10-5 m to 1×10-4 m can be exemplified, but it is not limited to such values. Alternatively, a base material is disposed between the first surface of the first compound semiconductor layer and the first light reflection layer, or alternatively, a compound semiconductor substrate and a base material are disposed between the first surface of the first compound semiconductor layer and the first light reflection layer, and the base surface can be configured from the surface of the base material. For the sake of convenience, the light-emitting element having such a configuration is referred to as the 'light-emitting element of the fourth configuration'. Examples of the material constituting the base material include transparent dielectric materials such as TiO2, Ta2O5, and SiO2, silicone-based resins, and epoxy-based resins. Note that the light-emitting element of the second configuration and the light-emitting element of the first configuration may be appropriately combined, the light-emitting element of the third configuration and the light-emitting element of the first configuration may be appropriately combined, and the light-emitting element of the fourth configuration and the light-emitting element of the first configuration may be appropriately combined. Alternatively, between the first surface of the first compound semiconductor layer and the first light reflection layer, a structure in which a second substrate having a first surface and a second surface facing the first surface and a first substrate having a first surface and a second surface facing the first surface are bonded together is disposed, and the base surface can be configured from the first surface of the first substrate. Here, the second surface of the first substrate and the first surface of the second substrate are bonded together, the first light reflection layer is formed on the first surface of the first substrate, and a stacked structure is formed on the second surface of the second substrate. For the sake of convenience, the light-emitting element having such a configuration is referred to as the 'light-emitting element of the fifth configuration'.As the second substrate, an InP substrate or a GaAs substrate can be cited, and as the first substrate, a Si substrate, a SiC substrate, an AlN substrate, or a GaN substrate can be cited.

[0037] In the light-emitting element constituting the light-emitting device according to the first aspect to the second aspect of the present disclosure including the preferred forms and configurations described above, the figure drawn by the first portion (first convex portion) when the base surface is cut in a virtual plane including the stacking direction of the stacked structure can be configured to be a part of a circle, a part of a parabola, a part of a sine curve, a part of an ellipse, or a part of a catenary curve. The figure may not be exactly a part of a circle, may not be exactly a part of a parabola, may not be exactly a part of a sine curve, may not be exactly a part of an ellipse, or may not be exactly a part of a catenary curve. That is, even when it is generally a part of a circle, generally a part of a parabola, generally a part of a sine curve, generally a part of an ellipse, or generally a part of a catenary curve, it is included in "the figure is a part of a circle, a part of a parabola, a part of a sine curve, generally a part of an ellipse, and generally a part of a catenary curve". A part of these curves may be replaced with a line segment. That is, the figure drawn by the top of the first portion (first convex portion) can be configured to be a part of a circle, a part of a parabola, a part of a sine curve, a part of an ellipse, or a part of a catenary curve, and the figure drawn by the bottom portion of the first portion can be a line segment. The figure drawn by the base surface can be obtained by measuring the shape of the base surface with a measuring instrument and analyzing the obtained data based on the least squares method.

[0038] Furthermore, in the light-emitting device according to the first aspect to the second aspect of the present disclosure including the preferred forms and configurations described above, the formation pitch of the light-emitting elements is desirably 3 μm or more and 50 μm or less, preferably 5 μm or more and 30 μm or less, and more preferably 8 μm or more and 25 μm or less.

[0039] Furthermore, in the light-emitting device according to the first aspect to the second aspect of the present disclosure including the preferred forms and configurations described above, the radius of curvature R1 of the central portion of the first portion (first convex portion) is preferably 1×10-5 m or more, more preferably 3×10-5 m or more. Furthermore, it may be 3×10-4 m or more. However, in any case, the value of R1 is a value equal to or greater than the value of the resonator length LOR. That is, R1≧LOR. And, in the light-emitting element constituting the light-emitting device according to the first aspect to the second aspect of the present disclosure including the preferred forms and configurations described above, when the resonator length is LOR, it is preferable to satisfy 1×10-5 m≦LOR.

[0040] Also, in the light-emitting element constituting the light-emitting device according to the first aspect to the second aspect of the present disclosure including the preferred forms and configurations described above, the radius of curvature R2nd of the central portion of the second portion is preferably 1×10-6 m or more, more preferably 3×10-6 m or more, still more preferably 5×10-6 m or more, and the radius of curvature R2nd’ of the top of the annular convex shape of the second portion is preferably 1×10-6 m or more, more preferably 3×10-6 m or more, still more preferably 5×10-6 m or more.

[0041] Furthermore, in the light-emitting device according to the first aspect of the present disclosure including the preferred forms and configurations described above, the radius of curvature R2 of the central portion of the second convex portion is preferably 1×10-6 m or more, more preferably 3×10-6 m or more. Furthermore, it may be 5×10-6 m or more.

[0042] In the light-emitting device according to the second aspect of the present disclosure including the preferred forms and configurations described above, the radius of curvature Rdummy at the center of the second convex portion is preferably 3×10-5 m or less, more preferably 2×10-5 m or less, still more preferably 1×10-6 m or more and 1.4 ×10-5 m or less. However, in any case, the value of Rdummy is less than the value of the resonator length LOR-dummy of the dummy light-emitting element. That is, Rdummy < LOR-dummy, preferably 0.05 ≦ Rdummy / LOR-dummy ≦ 0.99. Further, specifically, it is preferable that the resonator length LOR-dummy of the dummy light-emitting element satisfies LOR-dummy ≧ 1.5×10-5 m.

[0043] In the light-emitting element constituting the light-emitting device according to the first aspect to the second aspect of the present disclosure including the preferred forms and configurations described above, the laminated structure can be configured of at least one material selected from the group consisting of a GaN-based compound semiconductor, an InP-based compound semiconductor, and a GaAs-based compound semiconductor. Specifically, the laminated structure is (a) a configuration made of a GaN-based compound semiconductor (b) a configuration made of an InP-based compound semiconductor (c) a configuration made of a GaAs-based compound semiconductor (d) a configuration made of a GaN-based compound semiconductor and an InP-based compound semiconductor (e) a configuration made of a GaN-based compound semiconductor and a GaAs-based compound semiconductor (f) a configuration made of an InP-based compound semiconductor and a GaAs-based compound semiconductor (g) a configuration made of a GaN-based compound semiconductor, an InP-based compound semiconductor, and a GaAs-based compound semiconductor can be mentioned.

[0044] In the light-emitting element constituting the light-emitting device according to the first aspect to the second aspect of the present disclosure including the preferred forms and configurations described above, the value of the thermal conductivity of the laminate can be configured to be higher than the value of the thermal conductivity of the first light reflection layer. The value of the thermal conductivity of the dielectric material constituting the first light reflection layer is generally about 10 watts / (m·K) or less. On the other hand, the value of the thermal conductivity of the GaN-based compound semiconductor constituting the laminate is about 50 watts / (m·K) to about 100 watts / (m·K).

[0045] In the light-emitting element constituting the light-emitting device according to the first aspect to the second aspect of the present disclosure including the preferred forms and configurations described above, in the materials constituting various compound semiconductor layers (including the compound semiconductor substrate) located between the active layer and the first light reflection layer, it is preferable that there is no modulation of the refractive index of 10% or more (no refractive index difference of 10% or more based on the average refractive index of the laminate). Thereby, the generation of disturbance of the optical field in the resonator can be suppressed.

[0046] By the light-emitting element constituting the light-emitting device according to the first aspect to the second aspect of the present disclosure including the preferred forms and configurations described above, a surface-emitting laser element (vertical cavity laser, VCSEL) that emits laser light through the first light reflection layer can be configured, or alternatively, a surface-emitting laser element that emits laser light through the second light reflection layer can also be configured. In some cases, the substrate for manufacturing the light-emitting element (described later) may be removed.

[0047] In the light-emitting element constituting the light-emitting device according to the first to second aspects of the present disclosure, the laminated structure can specifically be configured of, for example, an AlInGaN-based compound semiconductor as described above. Here, more specifically, GaN, AlGaN, InGaN, and AlInGaN can be mentioned as the AlInGaN-based compound semiconductor. Further, these compound semiconductors may contain boron (B) atoms, thallium (Tl) atoms, arsenic (As) atoms, phosphorus (P) atoms, or antimony (Sb) atoms as desired. The active layer desirably has a quantum well structure. Specifically, it may have a single quantum well structure (SQW structure) or a multiple quantum well structure (MQW structure). The active layer having a quantum well structure has a structure in which at least one well layer and one barrier layer are laminated. As combinations of (the compound semiconductor constituting the well layer, the compound semiconductor constituting the barrier layer), (InyGa(1-y)N, GaN), (InyGa(1-y)N, InzGa(1-z)N) [where y>z], and (InyGa(1-y)N, AlGaN) can be exemplified. The first compound semiconductor layer can be constituted of a compound semiconductor of a first conductivity type (for example, n-type), and the second compound semiconductor layer can be constituted of a compound semiconductor of a second conductivity type (for example, p-type) different from the first conductivity type. The first compound semiconductor layer and the second compound semiconductor layer are also called the first cladding layer and the second cladding layer. The first compound semiconductor layer and the second compound semiconductor layer may be a single-layer structure, a multilayer structure, or a superlattice structure layer. Further, it can also be a layer provided with a composition gradient layer or a concentration gradient layer.

[0048] Alternatively, examples of group III atoms constituting the laminated structure include gallium (Ga), indium (In), and aluminum (Al), and examples of group V atoms constituting the laminated structure include arsenic (As), phosphorus (P), antimony (Sb), and nitrogen (N). Specifically, examples include AlAs, GaAs, AlGaAs, AlP, GaP, GaInP, AlInP, AlGaInP, AlAsP, GaAsP, AlGaAsP, AlInAsP, GaInAsP, AlInAs, GaInAs, AlGaInAs, AlAsSb, GaAsSb, AlGaAsSb, AlN, GaN, InN, AlGaN, GaNAs, and GaInNAs. Examples of compound semiconductors constituting the active layer include GaAs, AlGaAs, GaInAs, GaInAsP, GaInP, GaSb, GaAsSb, GaN, InN, GaInN, GaInNAs, and GaInNAsSb.

[0049] Examples of the quantum well structure include a two-dimensional quantum well structure, a one-dimensional quantum well structure (quantum wire), and a zero-dimensional quantum well structure (quantum dot). Examples of materials constituting the quantum well include, for example, Si; Se; chalcopyrite-based compounds such as CIGS (CuInGaSe), CIS (CuInSe2), CuInS2, CuAlS2, CuAlSe2, CuGaS2, CuGaSe2, AgAlS2, AgAlSe2, AgInS2, AgInSe2; perovskite-based materials; III-V compounds such as GaAs, GaP, InP, AlGaAs, InGaP, AlGaInP, InGaAsP, GaN, InAs, InGaAs, GaInNAs, GaSb, GaAsSb; CdSe, CdSeS, CdS, CdTe, In2Se3, In2S3, Bi2Se3, Bi2S3, ZnSe, ZnTe, ZnS, HgTe, HgS, PbSe, PbS, TiO2, etc., but are not limited thereto.

[0050] The stacked structure is formed on the second surface of the substrate for manufacturing a light-emitting element, or alternatively, on the second surface of a compound semiconductor substrate, or alternatively, on the second surface of a second substrate. Note that the second surface of the substrate for manufacturing a light-emitting element faces the first surface of the first compound semiconductor layer, and the first surface of the substrate for manufacturing a light-emitting element faces the second surface of the substrate for manufacturing a light-emitting element. Also, the second surface of the compound semiconductor substrate faces the first surface of the first compound semiconductor layer, and the first surface of the compound semiconductor substrate faces the second surface of the compound semiconductor substrate. Further, the second surface of the second substrate faces the first surface of the first compound semiconductor layer, and the first surface of the second substrate faces the second surface of the first substrate. Examples of the substrate for manufacturing a light-emitting element or the first substrate include a GaN substrate, a sapphire substrate, a GaAs substrate, a SiC substrate, an alumina substrate, a ZnS substrate, a ZnO substrate, an AlN substrate, a LiMgO substrate, a LiGaO2 substrate, a MgAl2O4 substrate, an InP substrate, a Si substrate, and those with an underlayer or a buffer layer formed on the surface (main surface) of these substrates. However, the use of a GaN substrate is preferred because of its low defect density. Also, examples of the compound semiconductor substrate or the second substrate include a GaN substrate, an InP substrate, and a GaAs substrate. Although it is known that the characteristics of a GaN substrate change depending on the growth surface, any of the main surfaces (second surfaces) of the GaN substrate can be used for forming the compound semiconductor layer. Also, regarding the main surface of the GaN substrate, depending on the crystal structure (for example, cubic or hexagonal), crystal plane orientations called by names such as the so-called A-plane, B-plane, C-plane, R-plane, M-plane, N-plane, S-plane, etc., or planes offset from these in a specific direction can also be used.As methods for forming various compound semiconductor layers constituting a light-emitting element, for example, metalorganic chemical vapor deposition (MOCVD method, Metal Organic-Chemical Vapor Deposition method, MOVPE method, Metal Organic-Vapor Phase Epitaxy method), molecular beam epitaxy (MBE method), hydride vapor phase epitaxy (HVPE method) in which halogen contributes to transport or reaction, atomic layer deposition (ALD method, Atomic Layer Deposition method), migration-enhanced epitaxy (MEE method, Migration-Enhanced Epitaxy method), plasma-assisted physical vapor deposition (PPD method), etc. can be mentioned, but it is not limited thereto.

[0051] GaAs and InP materials also have the zinc blende structure. As the main surfaces of the compound semiconductor substrate or the second substrate composed of these materials, in addition to surfaces such as (100), (111)AB, (211)AB, (311)AB, etc., surfaces offset in a specific direction can be mentioned. Note that "AB" means that the 90° off directions are different, and depending on this off direction, whether the main material of the surface becomes a group III or a group V is determined. By controlling these crystal plane orientations and film formation conditions, it becomes possible to control composition unevenness and dot shape. As the film formation method, similar to GaN-based compound semiconductors, film formation methods such as the MBE method, MOCVD method, MEE method, and ALD method are generally used, but it is not limited to these methods.

[0052] Here, as the organogallium source gas in the MOCVD method, trimethylgallium (TMG) gas or triethylgallium (TEG) gas can be mentioned. As the nitrogen source gas, ammonia gas or hydrazine gas can be mentioned. In the formation of a GaN-based compound semiconductor layer having an n-type conductivity type, for example, silicon (Si) may be added as an n-type impurity (n-type dopant). In the formation of a GaN-based compound semiconductor layer having a p-type conductivity type, for example, magnesium (Mg) may be added as a p-type impurity (p-type dopant). When aluminum (Al) or indium (In) is included as a constituent atom of the GaN-based compound semiconductor layer, trimethylaluminum (TMA) gas may be used as the Al source, and trimethylindium (TMI) gas may be used as the In source. Furthermore, monosilane gas (SiH4 gas) may be used as the Si source, and biscyclopentadienylmagnesium gas, methylcyclopentadienylmagnesium, or biscyclopentadienylmagnesium (Cp2Mg) may be used as the Mg source. Incidentally, as the n-type impurity (n-type dopant), in addition to Si, Ge, Se, Sn, C, Te, S, O, Pd, and Po can be mentioned. As the p-type impurity (p-type dopant), in addition to Mg, Zn, Cd, Be, Ca, Ba, C, Hg, and Sr can be mentioned.

[0053] When the stacked structure is composed of an InP-based compound semiconductor or a GaAs-based compound semiconductor, regarding the group III raw materials, organometallic raw materials such as TMGa, TEGa, TMIn, and TMAl are generally used. Regarding the group V raw materials, arsine gas (AsH3 gas), phosphine gas (PH3 gas), ammonia (NH3), etc. are used. Incidentally, organometallic raw materials may also be used for the group V raw materials. For example, tertiary butylarsine (TBAs), tertiary butylphosphine (TBP), dimethylhydrazine (DMHy), trimethylantimony (TMSb), etc. can be mentioned. Since these materials decompose at low temperatures, they are effective in low-temperature growth. As the n-type dopant, monosilane (SiH4) is used as the Si source, and hydrogen selenide (H2Se) is used as the Se source, etc. Also, as the p-type dopant, dimethylzinc (DMZn), bis(cyclopentadienyl)magnesium (Cp2Mg), etc. are used. As the dopant material, the same materials as in the case of being composed of a GaN-based compound semiconductor are candidates.

[0054] The support substrate for fixing the second light reflection layer may be composed of, for example, various substrates exemplified as substrates for manufacturing light-emitting elements, or alternatively, an insulating substrate made of AlN, etc., a semiconductor substrate made of Si, SiC, Ge, etc., a metal substrate, or an alloy substrate. However, it is preferable to use a conductive substrate, or alternatively, from the viewpoints of mechanical properties, elastic deformation, plastic deformability, heat dissipation, etc., it is preferable to use a metal substrate or an alloy substrate. As the thickness of the support substrate, for example, 0.05 mm to 1 mm can be exemplified. As the method for fixing the second light reflection layer to the support substrate, known methods such as a soldering method, a room-temperature bonding method, a bonding method using an adhesive tape, a bonding method using wax bonding, a method using an adhesive, etc. can be used. However, from the viewpoint of ensuring conductivity, it is desirable to adopt a soldering method or a room-temperature bonding method. For example, when using a silicon semiconductor substrate, which is a conductive substrate, as the support substrate, in order to suppress warping due to the difference in the coefficient of thermal expansion, it is desirable to adopt a method that can be bonded at a low temperature of 400 °C or lower. When using a GaN substrate as the support substrate, the bonding temperature may be 400 °C or higher.

[0055] In the manufacture of the light-emitting device according to the first aspect to the second aspect of the present disclosure, the substrate for manufacturing the light-emitting element may be left as it is, or after sequentially forming an active layer, a second compound semiconductor layer, a second electrode, and a second light reflection layer on the first compound semiconductor layer, the substrate for manufacturing the light-emitting element may be removed. Specifically, an active layer, a second compound semiconductor layer, a second electrode, and a second light reflection layer are sequentially formed on the first compound semiconductor layer, and then, after fixing the second light reflection layer to the support substrate, the substrate for manufacturing the light-emitting element is removed to expose the first compound semiconductor layer (the first surface of the first compound semiconductor layer). The removal of the substrate for manufacturing the light-emitting element can be performed by a wet etching method using an alkaline aqueous solution such as an aqueous sodium hydroxide solution or an aqueous potassium hydroxide solution, an ammonia solution + hydrogen peroxide water, a sulfuric acid solution + hydrogen peroxide water, a hydrochloric acid solution + hydrogen peroxide water, a phosphoric acid solution + hydrogen peroxide water, etc., a chemical mechanical polishing method (CMP method), a mechanical polishing method, a dry etching method such as a reactive ion etching (RIE) method, a lift-off method using a laser, or a combination thereof. When leaving the substrate for manufacturing the light-emitting element as it is, by bonding the first substrate to the substrate for manufacturing the light-emitting element, a bonded structure of the second substrate composed of the substrate for manufacturing the light-emitting element and the first substrate can also be obtained.

[0056] The first electrode electrically connected to the first compound semiconductor layer is common to a plurality of light-emitting elements, and the second electrode electrically connected to the second compound semiconductor layer is common to a plurality of light-emitting elements, or alternatively, it can be in a form provided individually for a plurality of light-emitting elements, but is not limited thereto.

[0057] When the substrate for manufacturing a light-emitting element remains, the first electrode may be formed on the first surface facing the second surface of the substrate for manufacturing a light-emitting element, or alternatively, on the first surface facing the second surface of the compound semiconductor substrate. Further, when the substrate for manufacturing a light-emitting element does not remain, it may be formed on the first surface of the first compound semiconductor layer constituting the laminated structure. In this case, since the first light reflection layer is formed on the first surface of the first compound semiconductor layer, for example, the first electrode may be formed so as to surround the first light reflection layer. The first electrode desirably has a single-layer structure or a multi-layer structure containing at least one metal (including alloys) selected from the group consisting of, for example, gold (Au), silver (Ag), palladium (Pd), platinum (Pt), nickel (Ni), Ti (titanium), vanadium (V), tungsten (W), chromium (Cr), aluminum (Al), copper (Cu), zinc (Zn), tin (Sn), and indium (In). Specifically, for example, Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, Ag / Pd can be exemplified. In the multi-layer structure, the layer before " / " is located closer to the active layer side. The same applies in the following description. The first electrode can be formed by a PVD method such as a vacuum evaporation method or a sputtering method.

[0058] When the first electrode is formed so as to surround the first light reflection layer, the first light reflection layer and the first electrode can be in contact with each other. Alternatively, the first light reflection layer and the first electrode can be separated from each other. In some cases, a state where the first electrode is formed up to the edge of the first light reflection layer and a state where the first light reflection layer is formed up to the edge of the first electrode can also be mentioned.

[0059] The second electrode can be configured of a transparent conductive material. Examples of the transparent conductive material constituting the second electrode include indium-based transparent conductive materials [specifically, for example, indium-tin oxide (ITO, Indium Tin Oxide, including Sn-doped In2O3, crystalline ITO, and amorphous ITO), indium-zinc oxide (IZO, Indium Zinc Oxide), indium-gallium oxide (IGO), indium-doped gallium-zinc oxide (IGZO, In-GaZnO4), IFO (F-doped In2O3), ITiO (Ti-doped In2O3), InSn, InSnZnO], tin-based transparent conductive materials [specifically, for example, tin oxide (SnOX), ATO (Sb-doped SnO2), FTO (F-doped SnO2)], zinc-based transparent conductive materials [specifically, for example, zinc oxide (ZnO, including Al-doped ZnO (AZO) and B-doped ZnO), gallium-doped zinc oxide (GZO), AlMgZnO (zinc oxide doped with aluminum oxide and magnesium oxide)], NiO, TiOX, graphene. Alternatively, examples of the second electrode include a transparent conductive film having a mother layer such as gallium oxide, titanium oxide, niobium oxide, antimony oxide, nickel oxide, etc., and transparent conductive materials such as spinel-type oxides and oxides having a YbFe2O4 structure. However, the material constituting the second electrode depends on the arrangement state of the second light reflection layer and the second electrode, and is not limited to transparent conductive materials. Metals such as palladium (Pd), platinum (Pt), nickel (Ni), gold (Au), cobalt (Co), rhodium (Rh), etc. can also be used. The second electrode may be composed of at least one of these materials. The second electrode can be formed, for example, by a PVD method such as vacuum evaporation or sputtering. Alternatively, a low-resistance semiconductor layer can be used as the transparent electrode layer. In this case, specifically, an n-type GaN-based compound semiconductor layer can also be used. Furthermore, when the layer adjacent to the n-type GaN-based compound semiconductor layer is p-type, the electrical resistance at the interface can be reduced by joining the two through a tunnel junction.By forming the second electrode from a transparent conductive material, current can be spread in the lateral direction (in-plane direction of the second compound semiconductor layer), and current can be efficiently supplied to a current injection region (described later).

[0060] On the first electrode and the second electrode, first pad electrodes and second pad electrodes may be provided to be electrically connected to an external electrode or circuit (hereinafter sometimes referred to as 'external circuit etc.'). The pad electrode desirably has a single-layer structure or a multilayer structure containing at least one metal selected from the group consisting of Ti (titanium), aluminum (Al), Pt (platinum), Au (gold), Ni (nickel), and Pd (palladium). Alternatively, the pad electrode can also be a multilayer structure exemplified by a multilayer structure of Ti / Pt / Au, a multilayer structure of Ti / Au, a multilayer structure of Ti / Pd / Au, a multilayer structure of Ti / Pd / Au, a multilayer structure of Ti / Ni / Au, and a multilayer structure of Ti / Ni / Au / Cr / Au. When the first electrode is formed of an Ag layer or an Ag / Pd layer, it is preferable to form a cover metal layer made of, for example, Ni / TiW / Pd / TiW / Ni on the surface of the first electrode, and form a pad electrode having a multilayer structure of, for example, Ti / Ni / Au or a multilayer structure of Ti / Ni / Au / Cr / Au on the cover metal layer.

[0061] The optical reflection layers (distributed Bragg reflector layers, DBR layers) that constitute the first and second optical reflection layers are composed of, for example, semiconductor multilayer films or dielectric multilayer films. Examples of dielectric materials include oxides such as Si, Mg, Al, Hf, Nb, Zr, Sc, Ta, Ga, Zn, Y, B, Ti, nitrides (e.g., SiNX, AlNX, AlGaNX, GaNX, BNX, etc.), or fluorides. Specifically, SiOX, TiOX, NbOX, ZrOX, TaOX, ZnOX, AlOX, HfOX, SiNX, AlNX, etc. can be exemplified. And among these dielectric materials, an optical reflection layer can be obtained by alternately laminating two or more types of dielectric films made of dielectric materials with different refractive indices. For example, multilayer films such as SiOX / SiNY, SiOX / TaOX, SiOX / NbOY, SiOX / ZrOY, SiOX / AlNY are preferable. In order to obtain a desired optical reflectivity, the material, film thickness, number of layers, etc. that constitute each dielectric film can be appropriately selected. The thickness of each dielectric film can be appropriately adjusted according to the material used, etc., and is determined by the oscillation wavelength (emission wavelength) λ0 and the refractive index n at the oscillation wavelength λ0 of the material used. Specifically, it is preferably an odd multiple of λ0 / (4n). For example, in a light-emitting element with an oscillation wavelength λ0 of 410 nm, when the optical reflection layer is composed of SiOX / NbOY, about 40 nm to 70 nm can be exemplified. The number of layers can be exemplified as 2 or more, preferably about 5 to 20. As the thickness of the entire optical reflection layer, for example, about 0.6 μm to 1.7 μm can be exemplified. Also, it is desirable that the optical reflectivity of the optical reflection layer is 95% or more.

[0062] The light reflecting layer can be formed based on well-known methods. Specifically, for example, PVD methods such as vacuum evaporation method, sputtering method, reactive sputtering method, ECR plasma sputtering method, magnetron sputtering method, ion beam assisted deposition method, ion plating method, laser ablation method, etc.; various CVD methods; coating methods such as spray method, spin coating method, dip method, etc.; methods combining two or more of these methods; methods combining these methods with any one or more of overall or partial pretreatment, irradiation with inert gas (Ar, He, Xe, etc.) or plasma, irradiation with oxygen gas or ozone gas or plasma, oxidation treatment (heat treatment), exposure treatment, etc. can be mentioned.

[0063] The size and shape of the light reflecting layer are not particularly limited as long as it covers the current injection region or the element region. As the planar shape of the first light reflecting layer, although not limited, specifically, circular, elliptical, rectangular, polygons including regular polygons (triangle, quadrilateral, hexagon, etc.) can be mentioned. Also, as the planar shape of the first part, a planar shape similar or approximate to the planar shape of the first light reflecting layer can be mentioned. As the shape of the boundary between the current injection region and the non-current injection / inner region, the shape of the boundary between the non-current injection / inner region and the non-current injection / outer region, and the planar shape of the opening provided in the element region or the current constriction region, specifically, circular, elliptical, rectangular, polygons including regular polygons (triangle, quadrilateral, hexagon, etc.) can be mentioned. The shape of the boundary between the current injection region and the non-current injection / inner region, and the shape of the boundary between the non-current injection / inner region and the non-current injection / outer region are preferably similar. Here, the "element region" refers to a region where narrowed current is injected, or a region where light is confined due to a refractive index difference, etc., or a region where laser oscillation occurs within the region sandwiched between the first light reflecting layer and the second light reflecting layer, or a region that actually contributes to laser oscillation within the region sandwiched between the first light reflecting layer and the second light reflecting layer.

[0064] The side surfaces and exposed surfaces of the laminated structure may be covered with a covering layer (insulating film). The formation of the covering layer (insulating film) can be carried out based on well-known methods. The refractive index of the material constituting the covering layer (insulating film) is preferably smaller than the refractive index of the material constituting the laminated structure. Examples of the material constituting the covering layer (insulating film) include SiOX-based materials containing SiO2, SiNX-based materials, SiOYNZ-based materials, TaOX, ZrOX, AlNX, AlOX, GaOX. Alternatively, organic materials such as polyimide resins can also be mentioned. As the method for forming the covering layer (insulating film), for example, PVD methods such as vacuum evaporation method and sputtering method, or CVD method can be mentioned, and it can also be formed based on a coating method.

Example

[0065] Example 1 relates to a light-emitting device according to the first aspect of the present disclosure, and also relates to a light-emitting element of the first configuration, specifically, a light-emitting element of the first-A configuration and a light-emitting element of the second configuration. Furthermore, it relates to a light-emitting device according to the first-A aspect of the present disclosure.

[0066] FIG. 1 shows a schematic partial end view of a region including one outer edge portion of the light-emitting element array in the light-emitting device of Example 1, FIG. 2 shows a schematic partial end view of a region including the other outer edge portion, FIG. 3 shows a schematic partial end view of the central portion of the light-emitting element array in the light-emitting device of Example 1, FIG. 4 schematically shows the arrangement of the first light reflection layer and the dummy concave mirror portion in the light-emitting device of Example 1, FIG. 5 schematically shows the arrangement of the first light reflection layer in a modified example of the light-emitting device of Example 1, and FIG. 6 shows a schematic partial end view of the light-emitting element constituting the light-emitting element array in the light-emitting device of Example 1. In addition, FIG. 7 (Modification-1) and FIG. 9 (Modification-2) show schematic partial end views of modified examples of the light-emitting element in Example 1, and FIG. 8 and FIG. 10 show schematic partial end views of the central portion of the light-emitting element array corresponding to FIG. 7 and FIG. 9.

[0067] In FIG. 4, a first end portion, which is one end portion of a base surface extending parallel to the second direction, is denoted by reference numeral 90a, a third end portion, which is the other end portion of the base surface extending parallel to the second direction, is denoted by reference numeral 90c, a second end portion, which is one end portion of the base surface extending parallel to the first direction, is denoted by reference numeral 90b, and a fourth end portion, which is the other end portion of the base surface extending parallel to the first direction, is denoted by reference numeral 90d. Further, schematic partial end views of a first compound semiconductor layer and the like for explaining the method of manufacturing the light-emitting element array in Example 1 are shown in FIGS. 11A, 11B, 12, 13, 14A, 14B, 15A, 15B, 15C, 16A, 16B, 17, 18A, and 18B.

[0068] The light-emitting device of Example 1 has a light-emitting element array 10 in which a plurality of light-emitting elements 11A are arranged, and a dummy concave mirror portion 43 surrounding the light-emitting element array 10. The light-emitting element 11A has a first compound semiconductor layer 21 having a first surface 21a and a second surface 21b facing the first surface 21a, an active layer (light-emitting layer) 23 facing the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 having a first surface 22a facing the active layer 23 and a second surface 22b facing the first surface 22a. A stacked structure 20 in which these are stacked a first light reflection layer 41 formed on a base surface 90 located on the first surface side of the first compound semiconductor layer 21, and a second light reflection layer 42 formed on the second surface side of the second compound semiconductor layer 22 and having a flat shape. In a portion of the base surface 90 on which the first light reflection layer 41 functioning as a concave mirror is formed, a first convex portion 91A is formed with reference to the second surface 21b of the first compound semiconductor layer 21. In a portion of an extending portion 93 of the base surface on which the dummy concave mirror portion 43 is formed, a second convex portion 93A is formed with reference to the second surface 21b of the first compound semiconductor layer 21.

[0069] And a plurality of light-emitting elements 11A are driven under the same driving conditions simultaneously. Specifically, although not limited thereto, for example, the first electrode 31 and the second electrode 32 described later may be made common for each light-emitting element 11A. However, it is not limited thereto, and they may be driven individually or grouped under the same driving conditions or different driving conditions.

[0070] Also, at least the active layer 23 and the second compound semiconductor layer 22 are not provided in the region (the extending portion 93 of the base surface) where the dummy concave mirror portion 43 is provided. More specifically, the active layer 23, the second compound semiconductor layer 22, the second light reflection layer 42, and the first electrode 31 and the second electrode 32 are not provided. That is, the region (the extending portion 93 of the base surface) where the dummy concave mirror portion 43 is provided does not have the function as the light-emitting element 11A.

[0071] And in the light-emitting device of Example 1, when the height of the first convex portion 91A provided on the base surface 90 is H1 and the height of the second convex portion 93A provided on the extending portion 93 of the base surface is H2 with reference to the reference virtual plane RP, H1 < H2 is satisfied. Specifically, 1.1 ≦ H2 / H1, preferably 1.1 ≦ H2 / H1 ≦ 500 is satisfied. More specifically, H1 = 0.6 μm, H2 = 2.3 μm, and H2 / H1 = 3.8. In Example 1, since the first portion 91 and the second portion 92 are uneven, the height from the virtual plane (reference virtual plane) RP including the region of the second portion closest to the second surface 21b of the first compound semiconductor layer 21 (the bottommost region of the second portion) to the top of the first convex portion is H1 of the first convex portion 91A. Also, when obtaining the intersection of the perpendicular bisector of the line segment connecting the first point e and the second point f and the second convex portion 93A, the distance from the perpendicular bisector to the intersection of the second convex portion is the height H2 of the second convex portion 93A.

[0072] Furthermore, in the light-emitting device of Example 1, in a portion (second portion 92) of the base surface 90 where the first light reflection layer 41 of the light-emitting element 11A is not formed, a recess 92A is formed with reference to the second surface 21b of the first compound semiconductor layer 21. That is, with reference to the second surface 21b of the first compound semiconductor layer 21, the second portion 92 has a convex shape downward, and the light-emitting device of Example 1 is a light-emitting element of the first configuration, specifically, a light-emitting element of the first-A configuration. The second portion 92 surrounds the first portion 91. Further, from a portion of the base surface 90 where the first light reflection layer 41 of the light-emitting element 11A' arranged at the outermost peripheral portion of the light-emitting element array 10 is formed, to a portion of an extending portion 93 of the base surface extending from that portion, a recess 94 is formed with reference to the second surface 21b of the first compound semiconductor layer 21. Also, in this way, in Example 1, the first surface 21a of the first compound semiconductor layer 21 constitutes the base surface 90.

[0073] In Examples 1 to 8, the first compound semiconductor layer 21 has a first conductivity type (specifically, n-type), and the second compound semiconductor layer 22 has a second conductivity type (specifically, p-type) different from the first conductivity type. Also, the light-emitting elements of Examples 1 to 8 are surface-emitting laser elements (vertical cavity lasers, VCSELs) that emit laser light.

[0074] Here, the base surface 90 is uneven and differentiable. That is, the base surface 90 is analytically smooth.

[0075] And, as described above, with reference to the second surface 21b of the first compound semiconductor layer 21, the first portion 91 of the base surface 90 on which the first light reflection layer 41 is formed has a convex shape upward, and with reference to the second surface 21b of the first compound semiconductor layer 21, the second portion 92 of the base surface 90 has a convex shape downward. The central portion 91c of the first portion 91 of the base surface 90 is located, for example, on the vertex of a square lattice (see FIG. 4), or is located on the vertex of an equilateral triangle lattice (see FIG. 5). In FIG. 4, 4×4 light-emitting elements 11A and 20 dummy concave mirror portions 43 are illustrated, but the number of these light-emitting elements 11A and dummy concave mirror portions 43 is not limited to these numbers. In the illustrated example, the dummy concave mirror portions 43 are arranged in one row so as to surround the light-emitting element array 10, but they may be arranged in two or more rows.

[0076] Although the first light reflection layer 41 is formed on the first portion 91 of the base surface 90, there may be a case where an extension portion of the first light reflection layer 41 is formed on the second portion 92 of the base surface 90, or there may be a case where an extension portion of the first light reflection layer 41 is not formed on the second portion 92. In Example 1, an extension portion of the first light reflection layer 41 is not formed on the second portion 92 of the base surface 90.

[0077] In the light-emitting element 11A in Example 1, the boundary 90bd between the first portion 91 and the second portion 92 is (1) When the first light reflection layer 41 does not extend to the second portion 92, the outer peripheral portion of the first light reflection layer 41 (2) When the first light reflection layer 41 extends to the second portion 92, the portion where an inflection point exists on the base surface 90 extending from the first portion 91 to the second portion 92 can be defined as such. Here, the light-emitting element 11A in Example 1 specifically corresponds to the case of (1).

[0078] Also, in the light-emitting element 11A in Example 1, the shape of [from the peripheral portion to the central portion of the first portion 91 / second portion 92] is (A) [a convex shape upward / a convex shape downward] (B) [a convex shape upward / continuing to a line segment from a convex shape downward] (C) [Convex upward shape / Continuing from convex upward shape to convex downward shape] (D) [Convex upward shape / Continuing from convex upward shape to convex downward shape and a line segment] (E) [Convex upward shape / Continuing from a line segment to convex downward shape] (F) [Convex upward shape / Continuing from a line segment to convex downward shape and a line segment] There are cases such as this, but the light-emitting element 11A in Example 1 specifically corresponds to the case of (A).

[0079] In the light-emitting element 11A in Example 1, the first surface 21a of the first compound semiconductor layer 21 constitutes the base surface 90. The figure drawn by the first portion 91 of the base surface 90 when the base surface 90 is cut by a virtual plane including the stacking direction of the stacked structure 20 is differentiable. More specifically, it can be a part of a circle, a part of a parabola, a sine curve, a part of an ellipse, or a part of a catenary curve, or a combination of these curves, and a part of these curves may be replaced by a line segment. The figure drawn by the second portion 92 is also differentiable. More specifically, it can be a part of a circle, a part of a parabola, a sine curve, a part of an ellipse, or a part of a catenary curve, or a combination of these curves, and a part of these curves may be replaced by a line segment. That is, the figure drawn by the top of the first portion 91 of the base surface 90 is a part of a circle, a part of a parabola, a part of a sine curve, a part of an ellipse, or a part of a catenary curve, and the figure drawn by the skirt portion of the first portion 91 of the base surface 90 can be a line segment. Also, the figure drawn by the bottommost part of the second portion 92 of the base surface 90 can be a part of a circle, a part of a parabola, a part of a sine curve, a part of an ellipse, or a part of a catenary curve, and the figure drawn by the portion above the bottommost part of the second portion 92 of the base surface 90 can be a line segment. Or, the figure drawn by the bottommost part of the second portion 92 of the base surface 90 can be a line segment, and the figure drawn by the portion above the bottommost part of the second portion 92 of the base surface 90 can be a part of a circle, a part of a parabola, a part of a sine curve, a part of an ellipse, or a part of a catenary curve and a line segment. Furthermore, the boundary between the first portion 91 and the second portion 92 of the base surface 90 is also differentiable.

[0080] The stacked structure 20 can be configured of at least one material selected from the group consisting of a GaN-based compound semiconductor, an InP-based compound semiconductor, and a GaAs-based compound semiconductor. In Example 1, specifically, the stacked structure 20 is made of a GaN-based compound semiconductor.

[0081] The first compound semiconductor layer 21 is composed of an n-GaN layer, the active layer 23 is composed of a five-layer multiple quantum well structure in which an In0.04Ga0.96N layer (barrier layer) and an In0.16Ga0.84N layer (well layer) are stacked, and the second compound semiconductor layer 22 is composed of a p-GaN layer. The first electrode 31 made of Ti / Pt / Au is electrically connected to an external circuit or the like through a first pad electrode (not shown) made of, for example, Ti / Pt / Au or V / Pt / Au. On the other hand, the second electrode 32 is formed on the second compound semiconductor layer 22, and the second light reflection layer 42 is formed on the second electrode 32. The second light reflection layer 42 on the second electrode 32 has a flat shape. The second electrode 32 is made of a transparent conductive material, specifically, ITO. On the edge of the second electrode 32, a second pad electrode 33 made of, for example, Pd / Ti / Pt / Au, Ti / Pd / Au, or Ti / Ni / Au for electrically connecting to an external circuit or the like may be formed or connected (see FIGS. 7 and 9). The first light reflection layer 41 and the second light reflection layer 42 are composed of a stacked structure of a Ta2O5 layer and a SiO2 layer, or a stacked structure of a SiN layer and a SiO2 layer. Although the first light reflection layer 41 and the second light reflection layer 42 have such a multilayer structure, they are represented as a single layer for simplicity of the drawing. The planar shapes of the first electrode 31, the first light reflection layer 41, the second light reflection layer 42, and the opening 34A provided in the insulating layer (current constriction layer) 34 are all circular.

[0082] As shown in FIGS. 1, 2, 3, and 6, the second electrode 32 is common to the light-emitting elements 11A that make up the light-emitting element array 10, and the second electrode is connected to an external circuit or the like via a first pad electrode (not shown). The first electrode 31 is also common to the light-emitting elements 11A that make up the light-emitting element array 10, and is connected to an external circuit or the like via a first pad electrode (not shown). In the light-emitting element 11A shown in FIGS. 1, 2, 3, and 6, light may be emitted to the outside through the first light reflection layer 41, or light may be emitted to the outside through the second light reflection layer 42.

[0083] Alternatively, as shown in FIGS. 7 and 8, the second electrode 32 is individually formed in the light-emitting elements 11A that make up the light-emitting element array 10, and is connected to an external circuit or the like via the second pad electrode 33. The first electrode 31 is common to the light-emitting elements 11A that make up the light-emitting element array 10, and is connected to an external circuit or the like via a first pad electrode (not shown). In the light-emitting element 11A shown in FIGS. 7 and 8, light may be emitted to the outside through the first light reflection layer 41, or light may be emitted to the outside through the second light reflection layer 42.

[0084] Alternatively, as shown in FIGS. 9 and 10, the second electrode 32 is individually formed in the light-emitting element 11A that constitutes the light-emitting element array 10. A bump 35 is formed on the second pad electrode 33 formed on the second electrode 32, and is connected to an external circuit or the like via the bump 35. The first electrode 31 is common in the light-emitting element 11A that constitutes the light-emitting element array 10, and is connected to an external circuit or the like via a first pad electrode (not shown). The bump 35 is disposed at a portion on the second surface side of the second compound semiconductor layer 22 facing the central portion 91c of the first portion 91 of the base surface 90, and covers the second light reflection layer 42. Examples of the bump 35 include a gold (Au) bump, a solder bump, and an indium (In) bump, and the method of disposing the bump 35 can be a well-known method. In the light-emitting element 11A shown in FIGS. 9 and 10, light is emitted to the outside through the first light reflection layer 41. Incidentally, a bump 35 may be provided in the light-emitting element 11A shown in FIGS. 1, 2, 3, and 6. Examples of the shape of the bump 35 include a cylindrical shape, an annular shape, and a hemispherical shape.

[0085] The value of the thermal conductivity of the laminated structure 20 is higher than the value of the thermal conductivity of the first light reflection layer 41. The value of the thermal conductivity of the dielectric material constituting the first light reflection layer 41 is about 10 watts / (m·K) or less. On the other hand, the value of the thermal conductivity of the GaN-based compound semiconductor constituting the laminated structure 20 is about 50 watts / (m·K) to about 100 watts / (m·K). Further, the surface roughness Ra of the base surface 90 was 0.6 nm. Here, the surface roughness Ra is defined in JIS B-610:2001, and specifically, it can be measured based on observations using AFM or cross-sectional TEM.

[0086] In the light-emitting element array 10, the formation pitch of the light-emitting elements is desirably 3 μm or more and 50 μm or less, preferably 5 μm or more and 30 μm or less, and more preferably 8 μm or more and 25 μm or less. Further, the radius of curvature R1 of the central portion 91c of the first portion 91 of the base surface 90 is desirably 1 × 10−5 m or more. The resonator length LOR preferably satisfies 1 × 10−5 m ≤ LOR. In the light-emitting element array 10 in Example 1 shown in FIGS. 4 and 5, the parameters of the light-emitting element 11A are as shown in Table 1 below. Note that the diameter of the first light reflection layer 41 is denoted by D1, the radius of curvature of the central portion 92c of the second portion 92 of the base surface 90 is denoted by R2nd, the diameter of the second convex portion 93A is denoted by D2, and the radius of curvature of the top portion of the second convex portion 93A is denoted by R2. Further, the specifications of the light-emitting element 11A in Example 1 shown in FIGS. 4 and 5 are shown in Tables 2 and 3 below. Note that the "number of light-emitting elements" is the number of light-emitting elements constituting one light-emitting element array 10, and the specifications of the dummy concave mirror portion 43 are the same as those of the first light reflection layer 41. The same applies hereinafter.

[0087] 〈Table 1〉 Refer to FIGS. 4 and 5 Formation pitch 20 μm Radius of curvature R1 43 μm Height H1 0.7 μm Diameter D1 19 μm Radius of curvature R2nd 60 μm Radius of curvature R2 14 μm Height H2 2.6 μm Diameter D2 19 μm Number of light-emitting elements 10 × 10

[0088] 〈Table 2〉 Refer to FIG. 4 Second light reflection layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 22 nm) Second compound semiconductor layer 22 p-GaN Active layer 23 InGaN (multiple quantum well structure) First compound semiconductor layer 21 n-GaN First light reflection layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length LOR 25 μm Oscillation wavelength (emission wavelength) λ0: 445 nm

[0089] , see Figure 5 Second light reflection layer 42: SiO2 / SiN (9 pairs) Second electrode 32: ITO (thickness: 22 nm) Second compound semiconductor layer 22: p-GaN Active layer 23: InGaN (multiple quantum well structure) First compound semiconductor layer 21: n-GaN First light reflection layer 41: SiO2 / Ta2O5 (14 pairs) Resonator length LOR: 25 μm Oscillation wavelength (emission wavelength) λ0: 488 nm

[0090] Hereinafter, with reference to FIGS. 11A, 11B, 12, 13, 14A, 14B, 15A, 15B, 15C, 16A, 16B, 17, 18A, and 18B, which are schematic partial end views of the first compound semiconductor layer and the like, a method for manufacturing a light-emitting element, a light-emitting element array, and a light-emitting device in Example 1 will be described.

[0091] First, after forming the stacked structure 20, a second light reflection layer 42 is formed on the second surface side of the second compound semiconductor layer 22.

[0092] [Process - 100] Specifically, on the second surface 12b of a compound semiconductor substrate 12 having a thickness of about 0.4 mm, a first compound semiconductor layer 21 having a first surface 21a and a second surface 21b facing the first surface 21a, an active layer (light-emitting layer) 23 facing the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 having a first surface 22a facing the active layer 23 and a second surface 22b facing the first surface 22a are stacked to form a stacked structure 20 made of a GaN-based compound semiconductor. More specifically, based on an epitaxial growth method by a well-known MOCVD method, the first compound semiconductor layer 21, the active layer 23, and the second compound semiconductor layer 22 are sequentially formed on the second surface 12b of the compound semiconductor substrate 12 to obtain the stacked structure 20 (see FIG. 11A).

[0093] [Project - 110] Next, an insulating layer (current constriction layer) 34 made of SiO2 and having an opening 34A is formed on the second surface 22b of the second compound semiconductor layer 22 based on a combination of a film formation method such as CVD method, sputtering method, or vacuum evaporation method and a wet etching method or a dry etching method (see FIG. 11B). The insulating layer 34 having the opening 34A defines a current constriction region (current injection region 36A and current non - injection region 36B). That is, the current injection region 36A is defined by the opening 34A.

[0094] To obtain a current constriction region, an insulating layer (current constriction layer) made of an insulating material (e.g., SiOX, SiNX, AlOX) may be formed between the second electrode 32 and the second compound semiconductor layer 22. Alternatively, the second compound semiconductor layer 22 may be etched by the RIE method or the like to form a mesa structure. Alternatively, a part of the stacked second compound semiconductor layer 22 may be partially oxidized laterally to form a current constriction region. Impurities may be ion - implanted into the second compound semiconductor layer 22 to form a region with reduced conductivity. Or these methods may be appropriately combined. However, the second electrode 32 needs to be electrically connected to the portion of the second compound semiconductor layer 22 where current flows due to current constriction.

[0095] [Project - 120] Thereafter, a second electrode 32 and a second light reflection layer 42 are formed on the second compound semiconductor layer 22. Specifically, starting from the second surface 22b of the second compound semiconductor layer 22 exposed at the bottom of the opening 34A (current injection region 36A) and extending over the insulating layer 34, for example, the second electrode 32 is formed based on a lift-off method. Further, if desired, the second pad electrode 33 is formed based on a combination of a film-forming method such as a sputtering method or a vacuum evaporation method and a patterning method such as a wet etching method or a dry etching method. Next, extending from above the second electrode 32 to above the second pad electrode 33, the second light reflection layer 42 is formed based on a combination of a film-forming method such as a sputtering method or a vacuum evaporation method and a patterning method such as a wet etching method or a dry etching method. The second light reflection layer 42 above the second electrode 32 has a flat shape. In this way, the structure shown in FIG. 12 can be obtained. Thereafter, if desired, bumps 35 may be disposed on the portion on the second surface side of the second compound semiconductor layer 22 facing the central portion 91c of the first portion 91 of the base surface 90. Specifically, the bumps 35 may be formed on the second pad electrode 33 (see FIGS. 9 and 10) formed on the second electrode 32 so as to cover the second light reflection layer 42, and the second electrode 32 is connected to an external circuit or the like via the bumps 35.

[0096] [Process - 130] Next, the second light reflection layer 42 is fixed to the support substrate 49 via the bonding layer 48 (see FIG. 13). Specifically, the second light reflection layer 42 (or the bumps 35) is fixed to the support substrate 49 composed of a sapphire substrate using the bonding layer 48 made of an adhesive.

[0097] [Process - 140] Next, the compound semiconductor substrate 12 is thinned based on a mechanical polishing method or a CMP method, and further, the compound semiconductor substrate 12 is removed by performing etching.

[0098] [Process - 150] After that, after forming the first sacrificial layer 81 on the first portion 91 of the base surface 90 (specifically, the first surface 21a of the first compound semiconductor layer 21) on which the first light reflection layer 41 is to be formed, the surface of the first sacrificial layer is made convex. Specifically, a first resist material layer is formed on the first surface 21a of the first compound semiconductor layer 21, and the first resist material layer is patterned so as to leave the first resist material layer on the first portion 91, thereby obtaining the first sacrificial layer 81 shown in FIG. 14A. Then, by subjecting the first sacrificial layer 81 to a heat treatment, the structure shown in FIG. 14B can be obtained. Next, an ashing treatment (plasma irradiation treatment) is performed on the surface of the first sacrificial layer 81', the surface of the first sacrificial layer 81' is altered, and when the second sacrificial layer 82 is formed in the next step, damage, deformation, etc. of the first sacrificial layer 81' are prevented from occurring.

[0099] [Process - 160] Next, the second sacrificial layer 82 is formed on the second portion 92 of the base surface 90 exposed between the first sacrificial layers 81' and on the first sacrificial layer 81' to make the surface of the second sacrificial layer 82 uneven (see FIG. 15A). Specifically, the second sacrificial layer 82 made of a second resist material layer having an appropriate thickness over the entire surface is formed. In the example shown in FIG. 4, the average film thickness of the second sacrificial layer 82 is 2 μm, and in the example shown in FIG. 5, the average film thickness of the second sacrificial layer 82 is 5 μm. Then, an ashing treatment (plasma irradiation treatment) is performed on the surface of the second sacrificial layer 82, the surface of the second sacrificial layer 82 is altered, and when the third sacrificial layer 83 is formed in the next step, damage, deformation, etc. of the second sacrificial layer 82 are prevented from occurring.

[0100] When it is necessary to further increase the radius of curvature R1 of the first portion 91 of the base surface 90, [Process - 150] and [Process - 160] may be repeated.

[0101] [Process - 170] And in the region where the second convex portion 93A is to be formed, as shown in FIGS. 16A and 16B, after forming a third sacrificial layer 83 made of a third resist material layer on the entire surface of the second sacrificial layer 82 formed on the first sacrificial layer 81", exposure and development are performed, and then heat treatment is applied to the third sacrificial layer 83 to obtain the structure shown in FIG. 17. Alternatively, after forming a third sacrificial layer 83 made of a third resist material layer on the entire surface of the second sacrificial layer 82, the third sacrificial layer 83 can also be exposed and developed using a halftone mask to obtain the structure shown in FIG. 17. By changing the size and shape of the first sacrificial layer 81" and also by changing the shape of the finally obtained third sacrificial layer 83, a second convex portion 93A having a desired size and shape can be obtained. In addition, in order to make the radius of curvature R2 of the second convex portion 93A a desired value, [Process - 170] may be repeated as necessary.

[0102] The materials constituting the first sacrificial layer 81, the second sacrificial layer 82, and the third sacrificial layer 83 are not limited to resist materials, and appropriate materials such as oxide materials (e.g., SiO2, SiN, TiO2, etc.), semiconductor materials (e.g., Si, GaN, InP, GaAs, etc.), and metal materials (e.g., Ni, Au, Pt, Sn, Ga, In, Al, etc.) may be selected for the first compound semiconductor layer 21. Also, by using a resist material having an appropriate viscosity as the resist material constituting the first sacrificial layer 81, the second sacrificial layer 82, and the third sacrificial layer 83, and by appropriately setting and selecting the thickness of the first sacrificial layer 81, the thickness of the second sacrificial layer 82, the thickness of the third sacrificial layer 83, the diameters of the first sacrificial layer 81', the first sacrificial layer 81", and the third sacrificial layer 83 after heating, etc., the value of the radius of curvature R1 of the first convex portion 91A, the uneven shape of the base surface 90 (e.g., diameter D1 and height H1), the radius of curvature R2 and shape (e.g., diameter and height) of the second convex portion 93A can be made into desired values and shapes.

[0103] [Process - 180] Thereafter, the third sacrificial layer 83, the second sacrificial layer 82, and the first sacrificial layer 81' are etched back, and further etched back from the base surface 90 toward the inside (i.e., from the first surface 21a of the first compound semiconductor layer 21 to the inside of the first compound semiconductor layer 21), so that with reference to the second surface 21b of the first compound semiconductor layer 21, a first convex portion 91A is formed on the first portion 91 of the base surface 90, at least a concave portion (in Example 1, the concave portion 92A) is formed on the second portion 92 of the base surface 90, and a second convex portion 93A is formed. Thus, the structure shown in FIG. 15B can be obtained. The etch-back can be performed based on a dry etching method such as the RIE method, or can also be performed based on a wet etching method using hydrochloric acid, nitric acid, hydrofluoric acid, phosphoric acid, or a mixture thereof.

[0104] [Process - 190] Next, a first light reflection layer 41 is formed on the first portion 91 of the base surface 90, and a dummy concave mirror portion 43 is formed on the second convex portion 93A. Specifically, after forming the first light reflection layer 41 on the entire surface of the base surface 90 based on a film formation method such as sputtering or vacuum evaporation (see FIG. 15C), by patterning the first light reflection layer 41, the first light reflection layer 41 can be obtained on the first portion 91 of the base surface 90 (see FIG. 18A), and the dummy concave mirror portion 43 can be obtained on the second convex portion 93A. Thereafter, a first electrode 31 common to each light-emitting element is formed on the second portion 92 of the base surface 90 (see FIG. 18B). Thus, the light-emitting element array 10 or the light-emitting element 11A and the light-emitting device in Example 1 can be obtained. By making the first electrode 31 protrude more than the first light reflection layer 41, the first light reflection layer 41 can be protected.

[0105] [Process - 200] Thereafter, the support substrate 49 is peeled off, and the light-emitting element array 10 is separated individually. Then, it may be electrically connected to an external electrode or a circuit (a circuit for driving the light-emitting element array 10). Specifically, the first compound semiconductor layer 21 may be connected to an external circuit or the like via the first electrode 31 and a first pad electrode (not shown), and the second compound semiconductor layer 22 may be connected to an external circuit or the like via the second pad electrode 33 or the bump 35. Next, by packaging or sealing, the light-emitting element array 10 in Example 1 is completed.

[0106] In the light-emitting device of Example 1, for example, when the first compound semiconductor layer is etched to form the first convex portion and the second convex portion in the first compound semiconductor layer, the n-type compound semiconductor layer located at the outermost peripheral portion is more easily etched than the light-emitting elements arranged at the central portion. However, since only a dummy concave mirror portion that does not contribute to light emission is formed in the n-type compound semiconductor layer located at the outermost peripheral portion, in the light-emitting element array, there is no problem that the shape of the first light reflection layer is different between the light-emitting elements arranged at the outermost peripheral portion and the light-emitting elements arranged at the central portion of the light-emitting element array. That is, it is possible to ensure the uniformity of processing of the entire light-emitting element array, and a light-emitting device having no luminance unevenness and having a light-emitting element array composed of a group of light-emitting elements with uniform beam diameter and luminance can be provided.

[0107] In general, due to the manufacturing process, the shape of the first compound semiconductor layer side of the light-emitting element disposed at the outermost peripheral portion of the light-emitting element array may be different from the shape of the first compound semiconductor layer side of the light-emitting elements located in other regions, and the solder wettability during mounting may be different. In the light-emitting device of Example 1, since H2 > H1, the solder wettability becomes uniform. That is, when mounting the light-emitting device to a mounting substrate (not shown) using solder via the dummy concave mirror portion (in such a case, the light from the light-emitting element is emitted to the outside through the second light reflection layer 42), the dummy concave mirror portion contacts the mounting substrate, and a gap is formed between the light-emitting element and the mounting substrate. As a result, the solder flows into this gap, so that the solder between the light-emitting element and the mounting substrate can be made uniform, and the light-emitting element can be reliably mounted on the mounting substrate. Therefore, the stress, heat, and other environmental factors applied during the operation of the light-emitting device are made uniform, and the characteristics (including reliability) of each light-emitting element are made uniform.

[0108] In addition, in the light-emitting element of Example 1, since the base surface is uneven and differentiable, when an external force is applied to the light-emitting element for some reason, the problem in the conventional technology where stress concentrates on the rising portion of the first convex portion can be surely avoided, and there is no risk of damage to the first compound semiconductor layer or the like. In particular, in the case of a light-emitting element array, when connecting and bonding to an external circuit or the like using bumps, it is necessary to apply a large load (for example, about 50 MPa) to the light-emitting element array during bonding. In the light-emitting element array of Example 1, even when such a large load is applied, there is no risk of damage to the light-emitting element array. Further, since the base surface is uneven, the generation of stray light is suppressed, and the occurrence of optical crosstalk between the light-emitting elements can be prevented.

[0109] When light-emitting elements are arranged at a narrow pitch in a light-emitting element array, the pitch cannot exceed the footprint diameter of the first sacrificial layer. Therefore, in order to reduce the pitch of the light-emitting element array, it is necessary to reduce the footprint diameter. By the way, the radius of curvature R1 at the center of the first portion of the base surface has a positive correlation with the footprint diameter. That is, when the footprint diameter decreases with the narrowing of the pitch, as a result, the radius of curvature R1 tends to decrease. For example, for a footprint diameter of 24 μm, a radius of curvature R1 of about 30 μm has been reported. Also, the emission angle of the light emitted from the light-emitting element has a negative correlation with the footprint diameter. That is, when the footprint diameter decreases with the narrowing of the pitch, as a result, the radius of curvature R1 decreases and the far field pattern (FFP) tends to expand. When the radius of curvature R1 is less than 30 μm, the emission angle may be several degrees or more. Depending on the application field of the light-emitting element array, the light emitted from the light-emitting element may be required to have a narrow emission angle of 2 to 3 degrees or less.

[0110] In Example 1, since the first portion is formed on the base surface based on the first sacrificial layer and the second sacrificial layer, even when the light-emitting elements are arranged at a narrow pitch, a first light reflection layer having a large radius of curvature R1 without distortion can be obtained. Therefore, it is possible to make the emission angle of the light emitted from the light-emitting element a narrow emission angle of 2 to 3 degrees or less, or as narrow an emission angle as possible, and a light-emitting element having a narrow FFP, a light-emitting element having high orientation, and a light-emitting element having high beam quality can be provided. Furthermore, since a wide light-emitting region can be obtained, an increase in the light output and an improvement in the light-emitting efficiency of the light-emitting element can be achieved, and an increase in the light output and an improvement in the efficiency of the light-emitting element can be achieved.

[0111] Moreover, since the height (thickness) of the first portion can be made low (thin), when connecting and bonding to an external circuit or the like using bumps in the light-emitting element array, it becomes difficult for voids to occur in the bumps, the thermal conductivity can be improved, and the mounting becomes easy.

[0112] In addition, in the light-emitting element of Example 1, since the first light reflection layer functions as a concave mirror, light diffracts and spreads from the active layer, and the light incident on the first light reflection layer is surely reflected toward the active layer and can be condensed on the active layer. Therefore, it is possible to avoid an increase in diffraction loss, and it is possible to surely perform laser oscillation. Moreover, since it has a long resonator, it is possible to avoid the problem of thermal saturation. In addition, since the resonator length can be increased, the tolerance of the manufacturing process of the light-emitting element is increased, and as a result, the yield can be improved. Note that the "diffraction loss" generally refers to a phenomenon in which laser light reciprocating in the resonator gradually dissipates outside the resonator because light tends to spread due to the diffraction effect. In addition, stray light can be suppressed, and optical crosstalk between light-emitting elements can be suppressed. Here, when the light emitted from a certain light-emitting element reaches an adjacent light-emitting element and is absorbed by the active layer of the adjacent light-emitting element or coupled to the resonance mode, it affects the light-emitting operation of the adjacent light-emitting element and causes noise generation. Such a phenomenon is called optical crosstalk. Moreover, since the top of the convex portion (protruding portion) is, for example, spherical, the effect of lateral light confinement is surely exhibited.

[0113] In the manufacturing process of the light-emitting element, a GaN substrate is used, but a GaN-based compound semiconductor is not formed based on a method of epitaxially growing in the lateral direction such as the ELO method. Therefore, as the GaN substrate, not only a polar GaN substrate but also a semi-polar GaN substrate or a non-polar GaN substrate can be used. When a polar GaN substrate is used, the luminous efficiency tends to decrease due to the effect of the piezoelectric field in the active layer. However, if a non-polar GaN substrate or a semi-polar GaN substrate is used, such a problem can be solved or alleviated.

Example

[0114] Example 2 is a modification of Example 1 and relates to a light-emitting device according to the first-B aspect of the present disclosure. FIG. 19 shows a schematic partial end face view of a region including one outer edge portion of the light-emitting element array in the light-emitting device of Example 2, and FIG. 20 shows a schematic partial end face view of a region including the other outer edge portion. Further, FIG. 21 schematically shows the arrangement of the first light reflection layer and the dummy first light reflection layer in the light-emitting device of Example 2. Note that the arrangement of the first light reflection layer and the dummy concave mirror portion in the light-emitting device of Example 2 can be made the same as that shown in FIG. 5, and the schematic partial end face view of the central portion of the light-emitting element array in the light-emitting device of Example 2 can be made the same as that shown in FIG. 3.

[0115] In the light-emitting device of Example 2, the plurality of light-emitting elements 11A are arranged in a two-dimensional matrix in a first direction and a second direction different from the first direction. The ends of the base surface 90 extending parallel to the second direction are referred to as a first end 90a and a third end 90c, and the ends of the base surface 90 extending parallel to the first direction are referred to as a second end 90b and a fourth end 90d. When the height of the first convex portion 91A1 provided on the base surface 90 is H1, the height of the second convex portion 93AA provided on the extending portion 93 of the base surface extending from the first end 90a is H2-A, and the height of the second convex portion 93AC provided on the extending portion 93 of the base surface extending from the third end 90c is H2-C, H2-A > H2-C > H1 is satisfied. Further, when the height of the second convex portion 93AB provided on the extending portion 93 of the base surface extending from the second end 90b is H2-B and the height of the second convex portion 93AD provided on the extending portion 93 of the base surface extending from the fourth end 90d is H2-D, the values of H2-B and H2-D decrease from the first end 90a toward the third end 90c.

[0116] The parameters of the light-emitting element 11A of Example 2 can be the same as those shown in Table 2. Also, the specifications of the light-emitting element 11A, the dummy concave mirror portions 43A and 43C in Example 2 shown in FIG. 21 are shown in Table 4 below. In the following table, "diameter D2-A" and "radius of curvature R2-A" are the values of the diameter and radius of curvature of the dummy concave mirror portion 43A formed on the second convex portion 93AA, and "diameter D2-C" and "radius of curvature R2-C" are the values of the diameter and radius of curvature of the dummy concave mirror portion 43C formed on the second convex portion 93AC.

[0117] Refer to FIG. 21 Formation pitch 20 μm Radius of curvature R1 43 μm Height H1 0.7 μm Diameter D1 19 μm Radius of curvature R2nd 60 μm Radius of curvature R2-A 24 μm Height H2-A 4 μm Diameter D2-A 25 μm Radius of curvature R2-C 30 μm Height H2-C 3.5 μm Diameter D2-C 25 μm Number of light-emitting elements 10×10

[0118] The light-emitting elements in the light-emitting device of Example 2 are, for example, in the same process as [Process - 170] of Example 1. After forming the third sacrificial layer 83 on the entire surface of the second sacrificial layer 82, when obtaining the structure shown in FIG. 17 by exposing and developing the third sacrificial layer 83, the thickness of the third sacrificial layer 83 for forming the second convex portions 93AA, 93AB, 93AC, and 93AD can be changed by controlling the exposure amount of the third sacrificial layer 83 using a halftone mask. Alternatively, the size and shape of the first sacrificial layer 81" may be changed according to the size and shape of the second convex portions to be formed.

[0119] In the light-emitting device of Example 2, a light-emitting device that satisfies H2-A > H2-C > H1 can be obtained. Therefore, in addition to the effects described in Example 1, when the light-emitting device is mounted on a mounting substrate (not shown) via the dummy concave mirror portion 43, the light-emitting device is in an inclined state with respect to the mounting substrate. As a result, the light-emitting device can emit light in a direction inclined in a desired direction with respect to the mounting substrate.

[0120] Specifically, the distance from the center of the dummy concave mirror portion 43A to the center of the dummy concave mirror portion 43C is 11 × 20 (μm) = 220 μm. Also, the value ΔH of [(height H2-A) - (height H2-C)] is 0.5 μm. Therefore, the inclination θ of the light-emitting device with respect to the mounting substrate is tan(θ) = ΔH / 220, and θ = 2.2 degrees.

Example

[0121] Example 3 is also a modification of Example 1 and relates to a light-emitting device according to the first-C aspect of the present disclosure. A schematic partial end view of a region including the other outer edge portion of the light-emitting element array in the light-emitting device of Example 3 is shown in FIG. 22. Note that the schematic partial end view of the region including one outer edge portion is the same as that shown in FIG. 19. Also, the arrangement of the first light reflection layer and the dummy concave mirror portion in the light-emitting device of Example 3 can be made the same as that shown in FIG. 21 or FIG. 5, and the schematic partial end view of the central portion of the light-emitting element array in the light-emitting device of Example 3 can be made the same as that shown in FIG. 3.

[0122] In the light-emitting device of Example 3, the plurality of light-emitting elements 11A are arranged in a two-dimensional matrix in a first direction and a second direction different from the first direction. The ends of the base surface 90 extending parallel to the second direction are called the first end 90a and the third end 90c, and the ends of the base surface 90 extending parallel to the first direction are called the second end 90b and the fourth end 90d. When the height of the first convex portion 91A provided on the base surface 90 is H1, the height of the second convex portion 93AA provided on the extending portion 93 of the base surface extending from the first end 90a is H2-A, and the height of the second convex portion 93AC provided on the extending portion 93 of the base surface extending from the third end 90c is H2-C, H2-A > H1 > H2-C is satisfied. Further, when the height of the second convex portion provided on the extending portion 93 of the base surface extending from the second end 90b is H2-B and the height of the second convex portion provided on the extending portion 93 of the base surface extending from the fourth end 90d is H2-D, the values of H2-B and H2-D decrease from the first end 90a toward the third end 90c.

[0123] The light-emitting element 11A of Example 3 can be made the same as shown in Table 2. Also, the specifications of the light-emitting element 11A and the dummy concave mirror portions 43A and 43C in Example 3 shown in FIG. 21 are shown in Table 5 below.

[0124] 〈Table 5〉 Refer to FIG. 21 Formation pitch 20 μm Radius of curvature R1 40 μm Height H1 1 μm Diameter D1 19 μm Radius of curvature R2nd 60 μm Radius of curvature R2-A 24 μm Height H2-A 4 μm Diameter D2-A 25 μm Radius of curvature R2-C 55 μm Height H2-C 0.7 μm Diameter D2-C 25 μm Number of light-emitting elements 10×10

[0125] In the light-emitting device of Example 3, for example, in the same process as [Process - 170] of Example 1, after forming the third sacrificial layer 83 on the entire surface of the second sacrificial layer 82, when obtaining the structure shown in FIG. 17 by exposing and developing the third sacrificial layer 83, the thickness of the third sacrificial layer 83 for forming the second convex portions 93AA, 93AB, 93AC, 93AD may be changed by controlling the exposure amount of the third sacrificial layer 83 using a halftone mask. Alternatively, the size and shape of the first sacrificial layer 81” may be changed according to the size and shape of the second convex portion to be formed.

[0126] In the light-emitting device of Example 3, a light-emitting device satisfying H2 - A > H1 > H2 - C can be obtained. However, by changing the height H2 - A of the second convex portion 93AA and the height H2 - C of the second convex portion 93AC, the inclination θ of the light-emitting device with respect to the mounting substrate can be controlled.

Example

[0127] Example 4 is also a modification of Example 1 and relates to a light-emitting device according to the first-D aspect of the present disclosure. A schematic partial end view of a region including one and the other outer edge portions of the light-emitting element array in the light-emitting device of Example 4 is the same as that shown in FIG. 22. Note that the arrangement of the first light reflection layer and the dummy concave mirror portion in the light-emitting device of Example 4 can be the same as that shown in FIG. 21 or FIG. 5, and a schematic partial end view of the central portion of the light-emitting element array in the light-emitting device of Example 4 can be the same as that shown in FIG. 3.

[0128] In the light-emitting device of Example 4, when the height of the first convex portion 91A provided on the base surface 90 is H1 and the height of the second convex portion 93A provided on the extending portion 93 of the base surface is H2, H2 < H1 is satisfied. And furthermore, H2 / H1 ≤ 0.9 Preferably, 0.02 ≤ H2 / H1 ≤ 0.9 is satisfied. Note that in FIG. 22, H2 is represented as H2 - C.

[0129] The parameters of the light-emitting element 11A of Example 4 can be the same as those shown in Table 2. Also, the specifications of the light-emitting element 11A and the dummy concave mirror portion 43 in Example 4 shown in FIG. 21 are shown in Table 6 below.

[0130] 〈Table 6〉 Refer to FIG. 21 Formation pitch 20 μm Radius of curvature R1 43 μm Height H1 0.7 μm Diameter D1 19 μm Radius of curvature R2nd 60 μm Radius of curvature R2 14 μm Height H2 4 μm Diameter D2 19 μm Number of light-emitting elements 25×25

[0131] In the light-emitting device of Example 4, for example, in the same process as [Process - 160] of Example 1, the size and shape of the first sacrificial layer 81” may be changed according to the size and shape of the second convex portion to be formed. Then, after forming the third sacrificial layer 83 on the entire surface of the second sacrificial layer 82, the same processes as [Process - 160] and [Process - 170] of Example 1, such as exposing and developing the third sacrificial layer 83, may be executed.

[0132] In the light-emitting device of Example 4, since a light-emitting device that satisfies H2 / H1 can be obtained, the inclination θ of the light-emitting device with respect to the mounting substrate can be controlled.

Example

[0133] Example 5 relates to a light-emitting device according to the second aspect of the present disclosure. A schematic partial end view of a region including one and the other outer edge portions of the light-emitting element array in the light-emitting device of Example 5 is shown in FIG. 23. Note that the arrangement of the first light reflection layer and the dummy concave mirror portion in the light-emitting device of Example 5 is the same as that schematically shown in FIG. 4 or FIG. 5, and a schematic partial end view of the central portion of the light-emitting element array in the light-emitting device of Example 5 can be the same as that shown in FIG. 3.

[0134] The light-emitting device of Example 5 is The light-emitting element array 10 is formed by arranging a plurality of light-emitting elements 11A, and a dummy light-emitting element 13 surrounding the light-emitting element array 10, and has the light-emitting element 11A and the dummy light-emitting element 13 are a first compound semiconductor layer 21 having a first surface 21a and a second surface 21b facing the first surface 21a, an active layer (light-emitting layer) 23 facing the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 having a first surface 22a facing the active layer 23 and a second surface 22b facing the first surface 22a, a stacked structure 20 in which are stacked, and is provided with.

[0135] And the light-emitting element 11A further has a first light reflection layer 41 formed on the base surface 90 located on the first surface 21a side of the first compound semiconductor layer 21, and a second light reflection layer 42 formed on the second surface 21b side of the second compound semiconductor layer 22 and having a flat shape, and is provided with. In the portion of the base surface 90 where the first light reflection layer 41 functioning as a concave mirror is formed, a first convex portion 91A is formed with reference to the second surface 21b of the first compound semiconductor layer 21.

[0136] Also, the dummy light-emitting element 13 further has a dummy first light reflection layer 41' composed of a dummy concave mirror portion 43' formed on an extension portion 93 of the base surface located on the first surface 21a side of the first compound semiconductor layer 21, and a second light reflection layer 42 formed on the second surface 21b side of the second compound semiconductor layer 22 and having a flat shape, and is provided with. In the portion of the extension portion 93 of the base surface where the dummy first light reflection layer 41' is formed, a second convex portion 93A is formed with reference to the second surface 21b of the first compound semiconductor layer 21.

[0137] And the dummy light-emitting element 13 does not emit light even when current is passed through the laminate 20. That is, although the dummy light-emitting element 13 has a structure similar to that of the light-emitting element 11A, it does not have the function of a light-emitting element.

[0138] Also, in the dummy light-emitting element 13, the value of the radius of curvature Rdummy at the center of the second convex portion 93A provided on the extending portion 93 of the base surface is less than the value of the resonator length LOR-dummy. That is, Rdummy < LOR-dummy. Therefore, the dummy light-emitting element 13 does not emit light even when current is passed through the laminate 20. That is, in the dummy light-emitting element 13, the confinement becomes excessive and diffraction loss occurs, resulting in the dummy light-emitting element 13 not emitting light. Furthermore, the plurality of light-emitting elements 11A and the dummy light-emitting element 13 are driven under the same driving conditions at the same time. However, the present invention is not limited to this, and they may be driven under the same driving conditions or different driving conditions. Also, the plurality of light-emitting elements constituting the light-emitting element array may be driven individually or grouped under the same driving conditions or different driving conditions. Here, the radius of curvature Rdummy at the center of the second convex portion 93A is desirably 3 × 10-5 m or less, preferably 2 × 10-5 m or less, more preferably 1 × 10-6 m or more and 1.4 × 10-5 m or less. Specifically, Rdummy = 14 μm was set. Also, LOR-dummy = 25 μm was set. Rdummy < LOR-dummy is satisfied.

[0139] The parameters of the light-emitting element 11A and the dummy light-emitting element 13 of Example 5 are as shown in Table 7 below. Also, the specifications of the light-emitting element 11A and the dummy light-emitting element 13 in Example 5 shown in FIG. 4 are shown in Table 7 below. In the illustrated example, the dummy light-emitting elements 13 are arranged in a single row so as to surround the light-emitting element array 10, but they may be arranged in two or more rows. Note that the subscript "dummy" means the specifications of the dummy light-emitting element.

[0140] 〈Table 7〉 Refer to FIG. 4 Forming pitch 20 μm Radius of curvature R1 50 μm Height H1 1 μm Diameter D1 18 μm Radius of curvature Rdummy 10 μm Height Hdummy 4 μm Diameter Ddummy 18 μm Number of light-emitting elements 25×25 [Light-emitting element and dummy light-emitting element] Second light reflection layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 22 nm) Second compound semiconductor layer 22 p-GaN Active layer 23 InGaN (multiple quantum well structure) First compound semiconductor layer 21 n-GaN First light reflection layer 41 SiO2 / Ta2O5 (14 pairs) [Light-emitting element] Resonator length LOR 25 μm Oscillation wavelength (emission wavelength) λ0 445 nm [Dummy light-emitting element] Resonator length LOR-dummy 28 μm

[0141] The light-emitting device of Example 5 can be manufactured substantially in the same manner as the light-emitting device described in Example 1. Therefore, although the detailed description is omitted, by changing the size and shape of the first sacrificial layer 81” and also by changing the shape of the finally obtained third sacrificial layer 83, a second convex portion 93A having a desired size and shape can be obtained.

[0142] Incidentally, as described above, in a light-emitting element array in which a plurality of light-emitting elements each composed of a surface-emitting laser element are arranged in a two-dimensional matrix, when a plurality of light-emitting elements are simultaneously driven under the same driving conditions, the light intensity of the light-emitting elements arranged in the outermost peripheral portion may be greater than the light intensity of the light-emitting elements arranged in other regions. This state is shown in FIGS. 36A, 36B, 36C, and 36D. FIG. 36A shows a state where no current is flowing through the light-emitting element array, FIG. 36B shows a state where a current I0 is flowing through the light-emitting element array, FIG. 36C shows a state where a current 5×I0 is flowing through the light-emitting element array, and FIG. 36D shows a state where a current 10×I0 is flowing through the light-emitting element array. When such a phenomenon occurs, the uniformity of the light intensity of the entire light-emitting element array deteriorates. Such a phenomenon occurs because even when a plurality of light-emitting elements are simultaneously driven under the same driving conditions, the current density of the current flowing through the light-emitting elements arranged in the outermost peripheral portion of the light-emitting element array is higher than the current density of the current flowing through the light-emitting elements arranged in other regions. As a result, the electric field strength of the light-emitting elements arranged in the outermost peripheral portion of the light-emitting element array is higher than the electric field strength of the light-emitting elements arranged in other regions, which is considered to be due to the occurrence of the photon recycling effect. The photon recycling effect refers to the fact that when light generated when electrons and holes recombine due to voltage application activates an acceptor and generates holes, the resistance of the region decreases as the number of holes increases, so the current density increases, and more light is generated in the region where the current density has increased, activating the acceptor and generating even more holes. Repeating this cycle is called the photon recycling effect.

[0143] In the light-emitting device of Example 5, by setting the value of the radius of curvature Rdummy at the center of the second convex portion in the dummy light-emitting element to be less than the value of the resonator length LOR-dummy in the dummy light-emitting element, the dummy light-emitting element does not emit light even when a current is passed through the dummy light-emitting element. As a result, in the light-emitting element array, when a plurality of light-emitting elements are simultaneously driven under the same driving conditions, the occurrence of a phenomenon in which the light intensity of the light-emitting elements arranged in the outermost peripheral portion is greater than the light intensity of the light-emitting elements arranged in other regions can be suppressed, so that uniform light emission can be obtained in the light-emitting device.

[0144] Moreover, the arrangement state of the light-emitting elements (including dummy light-emitting elements) existing around the light-emitting element 11A' arranged at the outermost peripheral portion of the light-emitting element array 10 is substantially the same as the arrangement state of the light-emitting elements existing around the light-emitting element 11A arranged at the central portion of the light-emitting element array 10. Therefore, in the light-emitting element 11A' arranged at the outermost peripheral portion of the light-emitting element array 10 and the light-emitting element 11A arranged at the central portion of the light-emitting element array 10, the way stress is applied, the way heat is applied, etc. are substantially the same, so that more uniform light emission can be obtained in the light-emitting device.

[0145] Except for the above points, the light-emitting device of Example 5 can have substantially the same configuration and structure as the light-emitting device of Example 1, so detailed description is omitted. Also, the configurations and structures of the light-emitting devices described in Examples 2 to 4 can be applied to the light-emitting device of Example 5. In addition to the above effects, the light-emitting device of Example 5 can achieve the effects of the light-emitting devices described in Examples 1 to 4.

Example

[0146] Example 6 is a modification of Examples 1 to 5 and relates to a light-emitting device having a first-B configuration. A schematic partial end face view of the light-emitting element 11B of Example 6 is shown in FIG. 24, and a schematic partial end face view of the light-emitting element array of Example 6 is shown in FIG. 25. Also, schematic plan views showing the arrangement of the first portion and the second portion of the base surface in the light-emitting element array of Example 6 are shown in FIGS. 26 and 28, and schematic plan views showing the arrangement of the first light reflection layer and the first electrode in the light-emitting element array of Example 6 are shown in FIGS. 27 and 29. Furthermore, schematic partial end face views of a first compound semiconductor layer, etc. for explaining the manufacturing method of the light-emitting element array of Example 6 are shown in FIGS. 30A, 30B, 31A, 31B, 32A, and 32B.

[0147] In the light-emitting element 11B of Example 6, with reference to the second surface 21b of the first compound semiconductor layer 21, the second portion 92 of the base surface 90 has a downwardly convex shape and an upwardly convex shape extending from the downwardly convex shape toward the center of the second portion 92. When the distance from the second surface 21b of the first compound semiconductor layer 21 to the center 91c of the first portion 91 of the base surface 90 is L1st and the distance from the second surface 21b of the first compound semiconductor layer 21 to the center 92c of the second portion 92 of the base surface 90 is L2nd, L2nd > L1st is satisfied. Also, when the radius of curvature of the center 91c of the first portion 91 of the base surface 90 (i.e., the radius of curvature of the first light reflection layer 41) is R1 and the radius of curvature of the center 92c of the second portion 92 of the base surface 90 is R2nd, R1 > R2nd is satisfied. Note that, as the value of L2nd / L1st, although not limited, 1 < L2nd / L1st ≤ 100 can be cited, and as the value of R1 / R2nd, although not limited, 1 < R1 / R2nd ≤ 100 can be cited. Specifically, for example, L2nd / L1st = 1.05 R1 / R2nd = 10 is the case.

[0148] In the light-emitting element 11B of Example 6, the center 91c of the first portion 91 of the base surface 90 is located on the vertex of a square lattice (see FIG. 26). In this case, the center 92c of the second portion 92 of the base surface 90 (shown as a circle in FIG. 26) is located on the vertex of the square lattice. Alternatively, the center 91c of the first portion 91 of the base surface 90 is located on the vertex of an equilateral triangle lattice (see FIG. 28). In this case, the center 92c of the second portion 92 of the base surface 90 (shown as a circle in FIG. 28) is located on the vertex of the equilateral triangle lattice. Also, the second portion 92 of the base surface 90 has a downwardly convex shape toward the center of the second portion 92. This region is indicated by reference numeral 92b in FIGS. 26 and 28.

[0149] In the light-emitting element 11B of Example 6, the shape from the peripheral portion to the central portion of [the first portion 91 / the second portion 92] is (A) [a shape convex upward / continuing from a shape convex downward to a shape convex upward] (B) [a shape convex upward / continuing from a shape convex upward to a shape convex downward and then to a shape convex upward] (C) [a shape convex upward / continuing from a line segment to a shape convex downward and then to a shape convex upward] Although there are cases such as these, the light-emitting element 11B of Example 6 specifically corresponds to the case of (A).

[0150] In the light-emitting element 11B of Example 6, bumps 35 are disposed on the portion on the second surface side of the second compound semiconductor layer 22 that faces the convex-shaped portion in the second portion 92 of the base surface 90. However, the disposition of the bumps 35 is not essential.

[0151] As shown in FIG. 24, the second electrode 32 is common to the light-emitting elements 11B that constitute the light-emitting element array 10, or alternatively, as shown in FIG. 25, is formed individually and is connected to an external circuit or the like via the bumps 35. The first electrode 31 is common to the light-emitting elements 11B that constitute the light-emitting element array 10 and is connected to an external circuit or the like via a first pad electrode (not shown). The bumps 35 are formed on the portion on the second surface side of the second compound semiconductor layer 22 that faces the convex-shaped portion 92c in the second portion 92 of the base surface 90. In the light-emitting element 11B shown in FIG. 24, light may be emitted to the outside via the first light reflection layer 41, or light may be emitted to the outside via the second light reflection layer 42. Examples of the shape of the bumps 35 include a cylindrical shape, an annular shape, and a hemispherical shape.

[0152] Also, the radius of curvature R2nd of the central portion 92c of the second portion 92 of the base surface 90 is desirably 1×10−6 m or more, preferably 3×10−6 m or more, more preferably 5×10−6 m or more, and specifically, the radius of curvature R2nd = 3 μm.

[0153] In the light-emitting element array 10 of Example 6 shown in FIGS. 26 and 27 and FIGS. 28 and 29, the parameters of the light-emitting element 11B are as shown in Table 8 below. Also, the specifications of the light-emitting element 11B of Example 6 shown in FIGS. 26 and 27 and FIGS. 28 and 29 are shown in Tables 9 and 10 below.

[0154] Refer to FIGS. 26 and 27 Refer to FIGS. 28 and 29 Forming pitch 25 μm 25 μm Radius of curvature R1 150 μm 150 μm Height H1 1 μm 1 μm Diameter D1 20 μm 20 μm Radius of curvature R2nd 10 μm 10 μm Radius of curvature R2 150 μm 150 μm Height H2 4 μm 4 μm Diameter D2 20 μm 20 μm Number of light-emitting elements 10×10 10×10

[0155] Refer to FIGS. 26 and 27 Second light reflection layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 30 nm) Second compound semiconductor layer 22 p-GaN Active layer 23 InGaN (multiple quantum well structure) First compound semiconductor layer 21 n-GaN First light reflection layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length LOR 25 μm Oscillation wavelength (emission wavelength) λ0 445 nm

[0156] Refer to FIGS. 28 and 29 Second light reflection layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 30 nm) Second compound semiconductor layer 22 p-GaN Active layer 23 InGaN (multiple quantum well structure) First compound semiconductor layer 21 n-GaN First light reflection layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length LOR 25 μm Oscillation wavelength (emission wavelength) λ0 445 nm

[0157] FIGS. 30A, 30B, 31A, 31B, 32A and 32B show a schematic partial end view of a first compound semiconductor layer and the like for explaining the manufacturing method of the light-emitting element array of Example 6. Since the manufacturing method of the light-emitting element array of Example 6 can be substantially the same as the manufacturing method of the light-emitting element array in Example 1, detailed description is omitted. In FIG. 30A, reference numeral 84, and in FIGS. 30B and 31A, reference numeral 84' indicate portions of the first sacrificial layer for forming the central portion 92c of the second portion 92. Note that as the size (diameter) of the first sacrificial layer becomes smaller, the height of the first sacrificial layer after the heat treatment becomes higher.

[0158] Even in the light-emitting element array of Example 6, when connecting and bonding to an external circuit or the like using the bump 35, it is necessary to apply a large load (for example, about 50 MPa) to the light-emitting element array during bonding. In the light-emitting element array of Example 6, even when such a large load is applied, the bump 35 and the convex-shaped portion 92c in the second portion 92 of the base surface 90 are arranged in a straight line in the vertical direction, so that damage to the light-emitting element array can be surely prevented.

Example

[0159] Example 7 is a modification of Examples 1 to 6. In Examples 1 to 6, the stacked structure 20 is composed of a GaN-based compound semiconductor. On the other hand, in Example 7, the stacked structure 20 is composed of an InP-based compound semiconductor or a GaAs-based compound semiconductor. In this case, as the compound semiconductor substrate, for example, an InP substrate or a GaAs substrate may be used although not limited thereto.

[0160] In the light-emitting element array of Example 7 having the same configuration and structure as shown in FIGS. 4 and 5 (however, the laminated structure 20 is composed of an InP-based compound semiconductor), the parameters of the light-emitting element and the specifications of the light-emitting element are as shown in Table 11 below.

[0161] Refer to FIG. 4 Formation pitch 20 μm Radius of curvature R1 43 μm Height H1 0.7 μm Diameter D1 19 μm Radius of curvature R2nd 60 μm Radius of curvature R2 14 μm Height H2 4 μm Diameter D2 19 μm Number of light-emitting elements 25 × 25 [Light-emitting element] Second light reflection layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 22 nm) Second compound semiconductor layer 22 p-InP Active layer 23 InGaAs (multiple quantum well structure), or, AlInGaAsP (multiple quantum well structure), or, InAs quantum dots First compound semiconductor layer 21 n-InP First light reflection layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length LOR 25 μm Oscillation wavelength (emission wavelength) λ0 1.6 μm

[0162] Also, in the light-emitting element array of Example 7 having the same configuration and structure as shown in FIGS. 4 and 5 (however, the laminated structure 20 is composed of a GaAs-based compound semiconductor), the parameters of the light-emitting element and the specifications of the light-emitting element are as shown in Table 12 below.

[0163] Refer to FIG. 4 Formation pitch 20 μm Radius of curvature R1 43 μm Height H1 0.7 μm Diameter D1 19 μm Radius of curvature R2nd 60 μm Radius of curvature R2 14 μm Height H2 4 μm Diameter D2 19 μm Number of light-emitting elements 25×25 [Light-emitting element] Second light reflection layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 22 nm) Second compound semiconductor layer 22 p-GaAs Active layer 23 InGaAs (multiple quantum well structure), or GaInNAs (multiple quantum well structure), or InAs quantum dots First compound semiconductor layer 21 n-GaAs First light reflection layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length LOR 25 μm Oscillation wavelength (emission wavelength) λ0 0.94 μm

[0164] The parameters and specifications of the light-emitting elements in the light-emitting element array of Example 7 having the same configuration and structure as shown in FIGS. 26 and 27 (however, the stacked structure 20 is composed of an InP-based compound semiconductor) are as shown in Table 13 below.

[0165] 〈Table 13〉 See FIGS. 26 and 27 Formation pitch 20 μm Radius of curvature R1 43 μm Height H1 0.7 μm Diameter D1 19 μm Radius of curvature R2nd 60 μm Radius of curvature R2 14 μm Height H2 4 μm Diameter D2 19 μm Number of light-emitting elements 25×25 [Light-emitting element] Second light reflection layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 30 nm) Second compound semiconductor layer 22 p-InP Active layer 23 InGaAs (multiple quantum well structure), or, AlInGaAsP (multiple quantum well structure), or, InAs quantum dots First compound semiconductor layer 21 n-InP First light reflection layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length LOR 25 μm Oscillation wavelength (emission wavelength) λ0 1.6 μm

[0166] The parameters and specifications of the light-emitting elements in the light-emitting element array of Example 7 having the same configuration and structure as shown in FIGS. 26 and 27 (however, the stacked structure 20 is composed of a GaAs-based compound semiconductor) are as shown in Table 14 below.

[0167] 〈Table 14〉 Refer to FIGS. 26 and 27 Forming pitch 20 μm Radius of curvature R1 43 μm Height H1 0.7 μm Diameter D1 19 μm Radius of curvature R2nd 60 μm Radius of curvature R2 14 μm Height H2 4 μm Diameter D2 19 μm Number of light-emitting elements 30×30 [Light-emitting element] Second light reflection layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 30 nm) Second compound semiconductor layer 22 p-GaAs Active layer 23 InGaAs (multiple quantum well structure), or, GaInNAs (multiple quantum well structure), or, InAs quantum dots First compound semiconductor layer 21 n-GaAs First light reflection layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length LOR 25 μm Oscillation wavelength (emission wavelength) λ0 0.94 μm

[0168] Fig. 33 shows a schematic partial cross-sectional view of a modified example of the light-emitting element of Example 7 (light-emitting element of the fifth configuration). In this modified example of the light-emitting element of Example 7, between the first surface 21a of the first compound semiconductor layer 21 and the first light reflection layer 41, there is arranged a structure in which a second substrate 52 having a first surface 52a and a second surface 52b facing the first surface 52a, and a first substrate 51 having a first surface 51a and a second surface 51b facing the first surface 51a are bonded together. And the base surface 90 is formed on the first surface 51a of the first substrate 51. The second surface 51b of the first substrate 51 and the first surface 52a of the second substrate 52 are bonded together, the first light reflection layer 41 is formed on the first surface 51a of the first substrate 51, and the stacked structure 20 is formed on the second surface 52b of the second substrate 52. As the second substrate 52, an InP substrate or a GaAs substrate can be mentioned, and as the first substrate 51, a Si substrate, a SiC substrate, an AlN substrate, or a GaN substrate can be mentioned. The stacked structure 20 is composed of, for example, an InP-based compound semiconductor or a GaAs-based compound semiconductor.

[0169] In the manufacture of the modified example of the light-emitting element 10E of this Example 7, in the same process as [Process - 140] of Example 1, the compound semiconductor substrate 12 is thinned and mirror-finished. The compound semiconductor substrate 12 corresponds to the second substrate 52. Next, the first substrate 51 and the second substrate 52 are bonded using a bonding method such as surface activation bonding, dehydration condensation bonding, or thermal diffusion bonding. Next, by performing the same processes as [Process - 150] to [Process - 180] of Example 1 on the first surface 51a of the first substrate 51, uneven portions (the first portion 91, the second portion 92) with the first surface 51a of the first substrate 51 as the base surface 90 can be formed. Then, the same processes as [Process - 190] to [Process - 200] of Example 1 may be executed.

Example

[0170] Example 8 is a modification of Examples 1 to 7. More specifically, the light-emitting element of Example 8 is a surface-emitting laser element (vertical cavity laser, VCSEL) that emits laser light from the top surface of the first compound semiconductor layer 21 through the first light reflection layer 41.

[0171] In the light-emitting element of Example 8, as shown in the schematic partial cross-sectional view of FIG. 34, the second light reflection layer 42 is fixed to a support substrate 49 composed of a silicon semiconductor substrate by a soldering method via a bonding layer 48 composed of a gold (Au) layer or a solder layer containing tin (Sn).

[0172] As described above, the present disclosure has been described based on preferred embodiments, but the present disclosure is not limited to these embodiments. The configurations and structures of the light-emitting devices described in the embodiments are examples and can be changed as appropriate, and the manufacturing methods of the light-emitting devices can also be changed as appropriate. In some cases, by appropriately selecting the bonding layer and the support substrate, a surface-emitting laser element that emits light from the top surface of the second compound semiconductor layer through the second light reflection layer can be obtained. In some cases, a through hole reaching the first compound semiconductor layer may be formed in the regions of the second compound semiconductor layer and the active layer that do not affect light emission, and a first electrode insulated from the second compound semiconductor layer and the active layer may be formed in this through hole. The first light reflection layer may extend to the second portion of the base surface. That is, the first light reflection layer on the base surface may be composed of a so-called solid film. And in this case, a through hole may be formed in the first light reflection layer extending to the second portion of the base surface, and a first electrode connected to the first compound semiconductor layer may be formed in this through hole.

[0173] The base surface may be constituted by the surfaces of the second sacrificial layer and the third sacrificial layer. And in this case, the first light reflection layer may be formed on the second sacrificial layer above the first sacrificial layer, or on a part of the second sacrificial layer above the first sacrificial layer, or the dummy concave mirror portion may be formed on the third sacrificial layer or on a part of the third sacrificial layer.

[0174] Also, [Process - 160] and [Process - 170] described in Example 1 can be changed as follows.

[0175] That is, in the same processes as [Process - 160] and [Process - 170], after forming the first sacrificial layer 81 on the first surface 21a of the first compound semiconductor layer 21, the surface of the first sacrificial layer 81 is made convex (see FIGS. 14A and 14B). Then, the first sacrificial layer 81' is etched back, and further, the first compound semiconductor layer 21 is etched back from the first surface 21a inward to form a convex portion 91' with reference to the second surface 21b of the first compound semiconductor layer 21. Thus, the structure shown in FIG. 35A can be obtained. After that, after forming the second sacrificial layer 82 over the entire surface (see FIG. 35B), the second sacrificial layer 82 is etched back, and further, the first compound semiconductor layer 21 is etched back inward to form a first convex portion 91A in the first portion 91 of the base surface 90 and at least a concave portion 92A in the second portion 92 of the base surface 90 with reference to the second surface 21b of the first compound semiconductor layer 21 (see FIG. 35C). Also, a second convex portion 93A is formed in the extending portion 93 of the base surface.

[0176] Alternatively, for example, the first sacrificial layer 81', the second sacrificial layer 82, and the third sacrificial layer 83 can also be formed based on the nanoimprint method. That is, a mold having a surface complementary to the base surface 90 and the extending portion of the base surface is prepared. After forming a sacrificial layer on the base surface and its extending portion where the first light reflection layer and the dummy concave mirror portion are to be formed, the shape of the surface complementary to the base surface of the mold is transferred to the sacrificial layer to form concavo - convex portions on the sacrificial layer. Then, the sacrificial layer is etched back, and further, etched back inward from the base surface to form a first convex portion in the first portion of the base surface, at least a concave portion in the second portion of the base surface, and a second convex portion in the extending portion of the base surface with reference to the second surface of the first compound semiconductor layer. Alternatively, the first sacrificial layer 81', the second sacrificial layer 82, and the third sacrificial layer 83 can also be formed using a 3D printer.

[0177] It is possible to adopt a form in which a wavelength conversion material layer (color conversion material layer) is provided in a region that emits light from the light-emitting element. And in this case, it is possible to adopt a form in which white light is emitted through the wavelength conversion material layer (color conversion material layer). Specifically, when the light emitted from the active layer is emitted to the outside through the first light reflection layer, the wavelength conversion material layer (color conversion material layer) may be formed on the light emission side of the first light reflection layer. When the light emitted from the active layer is emitted to the outside through the second light reflection layer, the wavelength conversion material layer (color conversion material layer) may be formed on the light emission side of the second light reflection layer.

[0178] When blue light is emitted from the light-emitting layer, by adopting the following forms, it is possible to adopt a form in which white light is emitted through the wavelength conversion material layer. [A] By using a wavelength conversion material layer that converts the blue light emitted from the light-emitting layer into yellow light, white light in which blue and yellow are mixed is obtained as the light emitted from the wavelength conversion material layer. [B] By using a wavelength conversion material layer that converts the blue light emitted from the light-emitting layer into orange light, white light in which blue and orange are mixed is obtained as the light emitted from the wavelength conversion material layer. [C] By using a wavelength conversion material layer that converts the blue light emitted from the light-emitting layer into green light and a wavelength conversion material layer that converts it into red light, white light in which blue, green, and red are mixed is obtained as the light emitted from the wavelength conversion material layer.

[0179] Alternatively, when ultraviolet light is emitted from the light-emitting layer, by adopting the following forms, it is possible to adopt a form in which white light is emitted through the wavelength conversion material layer. [D] By using a wavelength conversion material layer that converts the ultraviolet light emitted from the light-emitting layer into blue light and a wavelength conversion material layer that converts it into yellow light, white light in which blue and yellow are mixed is obtained as the light emitted from the wavelength conversion material layer. [E] By using a wavelength conversion material layer that converts the ultraviolet light emitted from the light-emitting layer into blue light and a wavelength conversion material layer that converts it into orange light, white light in which blue and orange are mixed is obtained as the light emitted from the wavelength conversion material layer. [F]By using a wavelength conversion material layer that converts the ultraviolet light emitted from the light-emitting layer into blue light, a wavelength conversion material layer that converts it into green light, and a wavelength conversion material layer that converts it into red light, white light in which blue, green, and red are mixed is obtained as the light emitted from the wavelength conversion material layer.

[0180] Here, as the wavelength conversion material excited by blue light and emitting red light, specifically, red-emitting phosphor particles, more specifically, (ME:Eu)S [where "ME" means at least one kind of atom selected from the group consisting of Ca, Sr, and Ba, and the same applies hereinafter], (M:Sm)x(Si,Al)12(O,N)16 [where "M" means at least one kind of atom selected from the group consisting of Li, Mg, and Ca, and the same applies hereinafter], ME2Si5N8:Eu, (Ca:Eu)SiN2, (Ca:Eu)AlSiN3 can be mentioned. Also, as the wavelength conversion material excited by blue light and emitting green light, specifically, green-emitting phosphor particles, more specifically, (ME:Eu)Ga2S4, (M:RE)x(Si,Al)12(O,N)16 [where "RE" means Tb and Yb], (M:Tb)x(Si,Al)12(O,N)16, (M:Yb)x(Si,Al)12(O,N)16, Si6-ZAlZOZN8-Z:Eu can be mentioned. Furthermore, as the wavelength conversion material excited by blue light and emitting yellow light, specifically, yellow-emitting phosphor particles, more specifically, YAG (yttrium aluminum garnet) - based phosphor particles can be mentioned. Note that the wavelength conversion material may be one kind, or two or more kinds may be mixed and used. Furthermore, by mixing two or more kinds of wavelength conversion materials, it is also possible to adopt a configuration in which emitted light of a color other than yellow, green, and red is emitted from the mixture of wavelength conversion materials. Specifically, for example, a configuration that emits cyan light may be adopted. In this case, green-emitting phosphor particles (for example, LaPO4:Ce,Tb, BaMgAl10O17:Eu,Mn, Zn2SiO4:Mn, MgAl11O19:Ce,Tb, Y2SiO5:Ce,Tb, MgAl11O19:CE,Tb,Mn) and blue-emitting phosphor particles (for example, BaMgAl10O17:Eu, BaMg2Al16O27:Eu, Sr2P2O7:Eu, Sr5(PO4)3Cl:Eu, (Sr,Ca,Ba,Mg)5(PO4)3Cl:Eu, CaWO4, CaWO4:Pb) may be mixed and used.

[0181] In addition, as wavelength conversion materials excited by ultraviolet rays and emitting red light, specifically, red-emitting phosphor particles, more specifically, Y2O3:Eu, YVO4:Eu, Y(P,V)O4:Eu, 3.5MgO·0.5MgF2·Ge2:Mn, CaSiO3:Pb,Mn, Mg6AsO11:Mn, (Sr,Mg)3(PO4)3:Sn, La2O2S:Eu, Y2O2S:Eu can be mentioned. Also, as wavelength conversion materials excited by ultraviolet rays and emitting green light, specifically, green-emitting phosphor particles, more specifically, LaPO4:Ce,Tb, BaMgAl10O17:Eu,Mn, Zn2SiO4:Mn, MgAl11O19:Ce,Tb, Y2SiO5:Ce,Tb, MgAl11O19:CE,Tb,Mn, Si6-ZAlZOZN8-Z:Eu can be mentioned. Furthermore, as wavelength conversion materials excited by ultraviolet rays and emitting blue light, specifically, blue-emitting phosphor particles, more specifically, BaMgAl10O17:Eu, BaMg2Al16O27:Eu, Sr2P2O7:Eu, Sr5(PO4)3Cl:Eu, (Sr,Ca,Ba,Mg)5(PO4)3Cl:Eu, CaWO4, CaWO4:Pb can be mentioned. Furthermore, as wavelength conversion materials excited by ultraviolet rays and emitting yellow light, specifically, yellow-emitting phosphor particles, more specifically, YAG-based phosphor particles can be mentioned. Note that the wavelength conversion material may be of one type, or two or more types may be mixed and used. Furthermore, by mixing and using two or more types of wavelength conversion materials, it is also possible to adopt a configuration in which emitted light of a color other than yellow, green, and red is emitted from the mixture of the wavelength conversion materials. Specifically, it may be configured to emit cyan light. In this case, a mixture of the above green-emitting phosphor particles and blue-emitting phosphor particles may be used.

[0182] However, the wavelength conversion material (color conversion material) is not limited to phosphor particles. For example, in an indirect transition type silicon-based material, in order to efficiently convert carriers into light like a direct transition type, the wave function of the carriers is localized, and using quantum effects, examples of light-emitting particles to which a quantum well structure such as a two-dimensional quantum well structure, a one-dimensional quantum well structure (quantum wire), or a zero-dimensional quantum well structure (quantum dot) is applied can be cited. Also, rare earth atoms added to a semiconductor material are known to emit sharp light by intra-shell transitions, and light-emitting particles to which such a technique is applied can also be cited.

[0183] As the wavelength conversion material (color conversion material), as described above, quantum dots can be cited. As the size (diameter) of the quantum dots decreases, the bandgap energy increases, and the wavelength of the light emitted from the quantum dots becomes shorter. That is, the smaller the size of the quantum dots, the shorter the wavelength of the light (light on the blue light side) is emitted, and the larger the size, the longer the wavelength of the light (light on the red light side) is emitted. Therefore, by using the same material to form the quantum dots and adjusting the size of the quantum dots, quantum dots that emit light with a desired wavelength (perform color conversion to a desired color) can be obtained. Specifically, the quantum dots preferably have a core-shell structure. Examples of the material constituting the quantum dots include Si; Se; chalcopyrite-based compounds such as CIGS (CuInGaSe), CIS (CuInSe2), CuInS2, CuAlS2, CuAlSe2, CuGaS2, CuGaSe2, AgAlS2, AgAlSe2, AgInS2, AgInSe2; perovskite-based materials; group III-V compounds such as GaAs, GaP, InP, InAs, InGaAs, AlGaAs, InGaP, AlGaInP, InGaAsP, GaN; CdSe, CdSeS, CdS, CdTe, In2Se3, In2S3, Bi2Se3, Bi2S3, ZnSe, ZnTe, ZnS, HgTe, HgS, PbSe, PbS, TiO2, etc., but are not limited thereto.

[0184] In addition, the present disclosure can also adopt the following configuration. [A01]《Light-emitting device ··· First aspect》 A light-emitting device array in which a plurality of light-emitting elements are arranged, and a dummy concave mirror portion surrounding the light-emitting device array, which has The light-emitting element has a first compound semiconductor layer having a first surface and a second surface facing the first surface, an active layer facing the second surface of the first compound semiconductor layer, and a second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface, are laminated to form a laminated structure, a first light reflection layer formed on the base surface located on the first surface side of the first compound semiconductor layer, and a second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape, which is provided with In a portion of the base surface where the first light reflection layer that functions as a concave mirror is formed, a first convex portion is formed with reference to the second surface of the first compound semiconductor layer, A light-emitting device in which a second convex portion is formed with reference to the second surface of the first compound semiconductor layer in a portion of the extending portion of the base surface where the dummy concave mirror portion is formed. [A02] The light-emitting device according to [A01], wherein the plurality of light-emitting elements are driven simultaneously under the same driving conditions. [A03] The light-emitting device according to [A01] or [A02], wherein at least the active layer and the second compound semiconductor layer are not provided in a region where the dummy concave mirror portion is provided. [A04] When the height of the first convex portion provided on the base surface is H1 and the height of the second convex portion provided on the extending portion of the base surface is H2, H1 < H2 The light-emitting device according to any one of [A01] to [A03] that satisfies [A05] 1.1 ≦ H2 / H1 The light-emitting device according to [A04] that satisfies [A06] The plurality of light-emitting elements are arranged in a two-dimensional matrix in a first direction and a second direction different from the first direction, The ends of the base surface extending parallel to the second direction are referred to as the first end and the third end, the ends of the base surface extending parallel to the first direction are referred to as the second end and the fourth end, when the height of the first convex portion provided on the base surface is H1, the height of the second convex portion provided on the extending portion of the base surface extending from the first end is H2-A, and the height of the second convex portion provided on the extending portion of the base surface extending from the third end is H2-C, H2-A > H2-C > H1 The light-emitting device according to any one of [A01] to [A03] that satisfies [A07] When the height of the second convex portion provided on the extending portion of the base surface extending from the second end is H2-B and the height of the second convex portion provided on the extending portion of the base surface extending from the fourth end is H2-D, the values of H2-B and H2-D decrease from the first end toward the third end. The light-emitting device according to [A06]. [A08] The plurality of light-emitting elements are arranged in a two-dimensional matrix in the first direction and a second direction different from the first direction. The ends of the base surface extending parallel to the second direction are referred to as the first end and the third end, the ends of the base surface extending parallel to the first direction are referred to as the second end and the fourth end, when the height of the first convex portion provided on the base surface is H1, the height of the second convex portion provided on the extending portion of the base surface extending from the first end is H2-A, and the height of the second convex portion provided on the extending portion of the base surface extending from the third end is H2-C, H2-A > H1 > H2-C The light-emitting device according to any one of [A01] to [A03] that satisfies [A09] When the height of the second convex portion provided on the extending portion of the base surface extending from the second end is H2-B and the height of the second convex portion provided on the extending portion of the base surface extending from the fourth end is H2-D, the values of H2-B and H2-D decrease from the first end toward the third end. The light-emitting device according to [A08]. [A10] When the height of the first convex portion provided on the base surface is H1 and the height of the second convex portion provided on the extending portion of the base surface is H2, H2 < H1 The light-emitting device according to any one of [A01] to [A03] that satisfies [A11]H2 / H1 ≤ 0.9 The light-emitting device according to [A10] that satisfies this condition. [A12] The center of the first convex portion provided on the base surface is located on the vertex of a square lattice. The light-emitting device according to any one of [A01] to [A11]. [A13] The center of the first convex portion provided on the base surface is located on the vertex of a regular triangular lattice. The light-emitting device according to any one of [A01] to [A11]. [A14] In the portion of the base surface where the first light reflection layer of the light-emitting element is not formed, a concave portion is formed with reference to the second surface of the first compound semiconductor layer. The light-emitting device according to any one of [A01] to [A13]. [A15] From the portion of the p-base surface where the first light reflection layer of the light-emitting element arranged at the outermost peripheral portion of the light-emitting element array is formed, extending to the extending portion of the base surface extending from that portion, a concave portion is formed with reference to the second surface of the first compound semiconductor layer. The light-emitting device according to [A14]. [A16] The first convex portion is surrounded by the second portion of the base surface. With reference to the second surface of the first compound semiconductor layer, the second portion has a downwardly convex shape and an upwardly convex shape extending from the downwardly convex shape toward the center of the second portion. The light-emitting device according to any one of [A01] to [A13]. [A17] When the distance from the second surface of the first compound semiconductor layer to the center of the first convex portion provided on the base surface is L1st, and the distance from the second surface of the first compound semiconductor layer to the center of the second portion of the base surface is L2nd, L2nd > L1st The light-emitting device according to [A16] that satisfies this condition. [A18] When the radius of curvature of the center of the first convex portion provided on the base surface (i.e., the radius of curvature of the first light reflection layer) is R1, and the radius of curvature of the center of the second portion of the base surface is R2nd, R1 > R2nd The light-emitting device according to [A16] or [A17] that satisfies this condition. [A19] The radius of curvature R2nd of the central portion of the second part of the base surface is 1×10-6 m or more, preferably 3×10-6 m or more, more preferably 5×10-6 m or more, and is the light-emitting device according to any one of [A16] to [A18]. [A20] Bumps are disposed on the second surface side portion of the second compound semiconductor layer facing the convex-shaped portion in the second part of the base surface, and is the light-emitting device according to any one of [A16] to [A19]. [A21] Bumps are disposed on the second surface side portion of the second compound semiconductor layer facing the central portion of the first convex portion provided on the base surface, and is the light-emitting device according to any one of [A01] to [A15]. [A22] The base surface is smooth, and is the light-emitting device according to any one of [A14] to [A21]. [A23] The formation pitch of the light-emitting elements is 3 μm or more and 50 μm or less, preferably 5 μm or more and 30 μm or less, more preferably 8 μm or more and 25 μm or less, and is the light-emitting device according to any one of [A01] to [A22]. [A24] The radius of curvature R1 of the central portion of the first convex portion provided on the base surface (that is, the radius of curvature of the first light reflection layer is 1×10-5 m or more, preferably 3×10-5 m or more, and is the light-emitting device according to any one of [A01] to [A23]. [A25] The laminated structure is made of at least one material selected from the group consisting of a GaN-based compound semiconductor, an InP-based compound semiconductor, and a GaAs-based compound semiconductor, and is the light-emitting device according to any one of [A01] to [A24]. [A26] When the resonator length of the light-emitting element is LOR, it satisfies 1×10-5 m ≦ LOR, and is the light-emitting device according to any one of [A01] to [A25]. [A27] The figure drawn by the first convex portion provided on the base surface when the base surface is cut in a virtual plane including the stacking direction of the stacked structure is a part of a circle or a part of a parabola, and is the light-emitting device according to any one of [A01] to [A26]. [A28] 《Light-emitting device of the second configuration》 The first surface of the first compound semiconductor layer constitutes the base surface, and is the light-emitting device according to any one of [A01] to [A27]. [A29]Light-emitting device of the third configuration A compound semiconductor substrate is disposed between the first surface of the first compound semiconductor layer and the first light reflection layer, and the base surface is composed of the surface of the compound semiconductor substrate. The light-emitting device according to any one of [A01] to [A27]. [A30]Light-emitting device of the fourth configuration A base material is disposed between the first surface of the first compound semiconductor layer and the first light reflection layer, or alternatively, a compound semiconductor substrate and a base material are disposed between the first surface of the first compound semiconductor layer and the first light reflection layer, and the base surface is composed of the surface of the base material. The light-emitting device according to any one of [A01] to [A27]. [A31]The material constituting the base material is at least one material selected from the group consisting of transparent dielectric materials such as TiO2, Ta2O5, SiO2, silicone resins, and epoxy resins. The light-emitting device according to [A30]. [A32]The value of the thermal conductivity of the laminated structure is higher than the value of the thermal conductivity of the first light reflection layer. The light-emitting device according to any one of [A01] to [A31]. [A33]Light-emitting element of the fifth configuration Between the first surface of the first compound semiconductor layer and the first light reflection layer, a structure in which a second substrate having a first surface and a second surface facing the first surface and a first substrate having a first surface and a second surface facing the first surface are bonded together is disposed, and the base surface is composed of the first surface of the first substrate. The semiconductor laser element according to any one of [A01] to [A27]. [A34]The second surface of the first substrate and the first surface of the second substrate are bonded together, a first light reflection layer is formed on the first surface of the first substrate, and a laminated structure is formed on the second surface of the second substrate. The semiconductor laser element according to [A33]. [A35]The first substrate is made of a Si substrate, a SiC substrate, an AlN substrate, or a GaN substrate, and the second substrate is made of an InP substrate or a GaAs substrate. The semiconductor laser element according to [A33] or [A34]. [B01]Light-emitting device... second aspect A plurality of light-emitting elements are arranged to form a light-emitting element array, and Dummy light-emitting elements surrounding the light-emitting element array, which has, The light-emitting element and the dummy light-emitting element are, A first compound semiconductor layer having a first surface and a second surface facing the first surface, An active layer facing the second surface of the first compound semiconductor layer, and, A second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface, A stacked structure in which are stacked, is provided, The light-emitting element further includes, A first light reflection layer formed on the base surface located on the first surface side of the first compound semiconductor layer, and, A second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape, is provided, On the portion of the base surface where the first light reflection layer functioning as a concave mirror is formed, a first convex portion is formed with reference to the second surface of the first compound semiconductor layer, The dummy light-emitting element further includes, A dummy first light reflection layer composed of a dummy concave mirror portion formed on an extension of the base surface located on the first surface side of the first compound semiconductor layer, and, A second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape, is provided, On the portion of the extension of the base surface where the dummy first light reflection layer is formed, a second convex portion is formed with reference to the second surface of the first compound semiconductor layer, The dummy light-emitting element is a light-emitting device that does not emit light even when a current is passed through the stacked structure. [B02]In the dummy light-emitting element, the value of the radius of curvature of the center portion of the second convex portion provided on the extension of the base surface is less than the value of the resonator length. The light-emitting device according to [B01]. [B03]The plurality of light-emitting elements and dummy light-emitting elements are driven under the same driving conditions simultaneously. The light-emitting device according to [B01] or [B02]. [C01]<<Method for manufacturing a light-emitting element array: First aspect>> A first compound semiconductor layer having a first surface and a second surface facing the first surface, An active layer facing the second surface of the first compound semiconductor layer, and a second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface, are laminated to form a laminated structure, a first light reflection layer formed on a base surface located on the first surface side of the first compound semiconductor layer, and a second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape, are provided, The base surface is uneven and differentiable, and is a method for manufacturing a light emitting element array composed of a plurality of light emitting elements, After forming the laminated structure, a second light reflection layer is formed on the second surface side of the second compound semiconductor layer, and then After forming a first sacrificial layer on the region of the base surface where the first light reflection layer is to be formed, the surface of the first sacrificial layer is made convex, and then A second sacrificial layer is formed on the second portion of the base surface exposed between the first sacrificial layer and the first sacrificial layer and on the first sacrificial layer to make the surface of the second sacrificial layer uneven, and then The second sacrificial layer and the first sacrificial layer are etched back, and further etched back from the base surface inward to form convex portions on the base surface with reference to the second surface of the first compound semiconductor layer, and at least concave portions are formed in portions surrounding the convex portions of the base surface. After that, A method for manufacturing a light emitting element array, comprising steps of forming a first light reflection layer on the first convex portion provided on the base surface. [C02] "Method for Manufacturing a Light Emitting Element Array: Second Aspect" A first compound semiconductor layer having a first surface and a second surface facing the first surface, An active layer facing the second surface of the first compound semiconductor layer, and a second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface, are laminated to form a laminated structure, a first light reflection layer formed on a base surface located on the first surface side of the first compound semiconductor layer, and a second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape, comprising, A method for manufacturing a light-emitting element array composed of a plurality of light-emitting elements, wherein the base surface is uneven and differentiable, After forming a laminated structure, a second light reflection layer is formed on the second surface side of the second compound semiconductor layer, and then, After forming a first sacrificial layer on the region of the base surface where the first light reflection layer is to be formed, the surface of the first sacrificial layer is made convex, and then, The first sacrificial layer is etched back, and further etched back from the base surface inward, so as to form a convex portion on the base surface with reference to the second surface of the first compound semiconductor layer, and then, After forming a second sacrificial layer on the base surface, the second sacrificial layer is etched back, and further etched back from the base surface inward, so as to form a convex portion on the base surface with reference to the second surface of the first compound semiconductor layer, and at least a concave portion is formed in a portion surrounding the convex portion of the base surface, and then, A method for manufacturing a light-emitting element array, comprising each step of forming a first light reflection layer on the first convex portion provided on the base surface. [C03] "Method for Manufacturing a Light-Emitting Element Array: Nanoimprint Method" A first compound semiconductor layer having a first surface and a second surface facing the first surface, An active layer facing the second surface of the first compound semiconductor layer, and A second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface, A laminated structure in which the above are laminated, A first light reflection layer formed on the base surface located on the first surface side of the first compound semiconductor layer, and A second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape, comprising, A method for manufacturing a light-emitting element array composed of a plurality of light-emitting elements, wherein the base surface is uneven and differentiable, Prepare a mold having a surface complementary to the base surface, After forming a laminated structure, a second light reflection layer is formed on the second surface side of the second compound semiconductor layer, and then, After forming a sacrificial layer on the base surface on which the first light-reflecting layer is to be formed, the shape of the surface complementary to the base surface of the mold is transferred to the sacrificial layer, and after forming uneven portions on the sacrificial layer, The sacrificial layer is etched back, and further etched back from the base surface toward the inside, so that a convex portion is formed on the base surface with respect to the second surface of the first compound semiconductor layer, and at least a concave portion is formed in a portion surrounding the convex portion of the base surface. After that, A method for manufacturing a light-emitting element array including each step of forming a first light-reflecting layer on the first convex portion provided on the base surface.

[0185] This application claims priority based on Japanese Patent Application No. 2020-109749 filed with the Japan Patent Office on June 25, 2020, and all the contents of this application are incorporated herein by reference.

[0186] Those skilled in the art can conceive various modifications, combinations, sub-combinations, and changes according to design requirements and other factors, but it is understood that they are included in the scope of the appended claims and their equivalents.

Claims

1. A light-emitting device comprising a light-emitting element array in which a plurality of light-emitting elements are arranged, and a dummy concave mirror portion surrounding the light-emitting element array, wherein the light-emitting element comprises a first compound semiconductor layer having a first surface and a second surface facing the first surface, an active layer facing the second surface of the first compound semiconductor layer, and a second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface, which are laminated to form a laminated structure, a first light reflection layer formed on a base surface located on the first surface side of the first compound semiconductor layer, and a second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape, wherein a first convex portion is formed on a portion of the base surface on which the first light reflection layer functioning as a concave mirror is formed, with reference to the second surface of the first compound semiconductor layer, a second convex portion is formed on an extending portion of the base surface on which the dummy concave mirror portion is formed, with reference to the second surface of the first compound semiconductor layer, and at least the active layer and the second compound semiconductor layer are not provided in a region where the dummy concave mirror portion is provided. A light-emitting device.

2. The light-emitting device according to claim 1, wherein the plurality of light-emitting elements are driven under the same driving conditions simultaneously.

3. When the height of the first convex portion provided on the base surface is H1 and the height of the second convex portion provided on the extending portion of the base surface is H2, H1 < H2 The light-emitting device according to claim 1, which satisfies the above condition.

4. 1.1 ≦ H2 / H1 The light-emitting device according to claim 3, which satisfies the above condition.

5. The plurality of light-emitting elements are arranged in a two-dimensional matrix in a first direction and a second direction different from the first direction. An end portion of the base surface extending parallel to the second direction is referred to as a first end portion and a third end portion, an end portion of the base surface extending parallel to the first direction is referred to as a second end portion and a fourth end portion. When the height of the first convex portion provided on the base surface is H1, the height of the second convex portion provided on the extending portion of the base surface extending from the first end portion is H2 - A, and the height of the second convex portion provided on the extending portion of the base surface extending from the third end portion is H2 - C, H2 - A > H2 - C > H1 The light-emitting device according to claim 1, which satisfies the above condition.

6. When the height of the second convex portion provided on the extending portion of the base surface extending from the second end portion is H2 - B and the height of the second convex portion provided on the extending portion of the base surface extending from the fourth end portion is H2 - D, The values of H2 - B and H2 - D decrease from the first end portion toward the third end portion. The light-emitting device according to claim 5.

7. The plurality of light-emitting elements are arranged in a two-dimensional matrix in a first direction and a second direction different from the first direction. The ends of the base surface extending parallel to the second direction are referred to as a first end and a third end, the ends of the base surface extending parallel to the first direction are referred to as a second end and a fourth end, when the height of the first convex portion provided on the base surface is H1, the height of the second convex portion provided on the extending portion of the base surface extending from the first end is H2-A, and the height of the second convex portion provided on the extending portion of the base surface extending from the third end is H2-C. H2 - A > H1 > H2 - C The light-emitting device according to claim 1, which satisfies the above.

8. When the height of the second convex portion provided on the extending portion of the base surface extending from the second end is H2-B, and the height of the second convex portion provided on the extending portion of the base surface extending from the fourth end is H2-D. The light-emitting device according to claim 7, wherein the values of H2-B and H2-D decrease from the first end toward the third end.

9. When the height of the first convex portion provided on the base surface is H1, and the height of the second convex portion provided on the extending portion of the base surface is H2. H2 < H1 The light-emitting device according to claim 1, which satisfies the above.

10. H2 / H1 ≤ 0.9 The light-emitting device according to claim 9, which satisfies the above.

11. In the portion of the base surface where the first light reflection layer of the light-emitting element is not formed, a concave portion is formed with reference to the second surface of the first compound semiconductor layer. The light-emitting device according to claim 1.

12. From the portion of the base surface where the first light reflection layer of the light-emitting element arranged at the outermost peripheral portion of the light-emitting element array is formed, to the portion of the extending portion of the base surface extending from that portion, a concave portion is formed with reference to the second surface of the first compound semiconductor layer. The light-emitting device according to claim 11.

13. The light-emitting device includes a light-emitting element array in which a plurality of light-emitting elements are arranged, and a dummy concave mirror portion surrounding the light-emitting element array. It has The light-emitting element has a first compound semiconductor layer having a first surface and a second surface facing the first surface, an active layer facing the second surface of the first compound semiconductor layer, and a second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface. is a stacked structure in which these are stacked. a first light reflection layer formed on the base surface located on the first surface side of the first compound semiconductor layer, and a second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape. is provided with On a portion of the base surface on which the first light reflection layer functioning as a concave mirror is formed, a first convex portion is formed with reference to the second surface of the first compound semiconductor layer. On a portion of the extending portion of the base surface on which the dummy concave mirror portion is formed, a second convex portion is formed with reference to the second surface of the first compound semiconductor layer. When the height of the first convex portion provided on the base surface is H1 and the height of the second convex portion provided on the extending portion of the base surface is H2. H1 < H2 is satisfied. Light-emitting device. **Claim 14**: A light-emitting device having a light-emitting element array formed by arranging a plurality of light-emitting elements, and a dummy concave mirror portion surrounding the light-emitting element array. The light-emitting element has a first compound semiconductor layer having a first surface and a second surface facing the first surface, an active layer facing the second surface of the first compound semiconductor layer, and a second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface. These are laminated to form a laminated structure. A first light reflection layer formed on the base surface located on the first surface side of the first compound semiconductor layer, and a second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape. The light-emitting device is provided with On a portion of the base surface on which the first light reflection layer functioning as a concave mirror is formed, a first convex portion is formed with reference to the second surface of the first compound semiconductor layer. On a portion of the extending portion of the base surface on which the dummy concave mirror portion is formed, a second convex portion is formed with reference to the second surface of the first compound semiconductor layer. The plurality of light-emitting elements are arranged in a two-dimensional matrix in a first direction and a second direction different from the first direction. An end portion of the base surface extending parallel to the second direction is referred to as a first end portion and a third end portion, and an end portion of the base surface extending parallel to the first direction is referred to as a second end portion and a fourth end portion. When the height of the first convex portion provided on the base surface is H1, the height of the second convex portion provided on the extending portion of the base surface extending from the first end portion is H2 - A, and the height of the second convex portion provided on the extending portion of the base surface extending from the third end portion is H2 - C. H2 - A > H2 - C > H1 is satisfied. Light-emitting device. **Claim 15**: A light-emitting device having a light-emitting element array formed by arranging a plurality of light-emitting elements, and a dummy concave mirror portion surrounding the light-emitting element array. The light-emitting element has a first compound semiconductor layer having a first surface and a second surface facing the first surface, an active layer facing the second surface of the first compound semiconductor layer, and a second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface. These are laminated to form a laminated structure. ​ ​ A first light reflection layer formed on a base surface located on the first surface side of the first compound semiconductor layer, and A second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape, are provided, In a portion of the base surface on which the first light reflection layer functioning as a concave mirror is formed, a first convex portion is formed with reference to the second surface of the first compound semiconductor layer, In a portion of the extending portion of the base surface where the dummy concave mirror portion is formed, a second convex portion is formed with reference to the second surface of the first compound semiconductor layer, A plurality of light emitting elements are arranged in a two-dimensional matrix in a first direction and a second direction different from the first direction, An end portion of the base surface extending parallel to the second direction is referred to as a first end portion and a third end portion, an end portion of the base surface extending parallel to the first direction is referred to as a second end portion and a fourth end portion, and when the height of the first convex portion provided on the base surface is H1, the height of the second convex portion provided on the extending portion of the base surface extending from the first end portion is H2 - A, and the height of the second convex portion provided on the extending portion of the base surface extending from the third end portion is H2 - C, H2 - A > H1 > H2 - C is satisfied Light emitting device.

16. A light emitting element array in which a plurality of light emitting elements are arranged, and A dummy concave mirror portion surrounding the light emitting element array, are provided, The light emitting element has A first compound semiconductor layer having a first surface and a second surface facing the first surface, An active layer facing the second surface of the first compound semiconductor layer, and A second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface, are laminated to form a laminated structure, A first light reflection layer formed on a base surface located on the first surface side of the first compound semiconductor layer, and A second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape, are provided, In a portion of the base surface on which the first light reflection layer functioning as a concave mirror is formed, a first convex portion is formed with reference to the second surface of the first compound semiconductor layer, In a portion of the extending portion of the base surface where the dummy concave mirror portion is formed, a second convex portion is formed with reference to the second surface of the first compound semiconductor layer, When the height of the first convex portion provided on the base surface is H1 and the height of the second convex portion provided on the extending portion of the base surface is H2, H2 < H1 is satisfied Light emitting device.

17. A light emitting element array in which a plurality of light emitting elements are arranged, and A dummy concave mirror portion surrounding the light emitting element array, are provided, The light emitting element has A first compound semiconductor layer having a first surface and a second surface facing the first surface, An active layer facing the second surface of the first compound semiconductor layer, and A second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface, Are stacked to form a stacked structure, A first light reflection layer formed on the base surface located on the first surface side of the first compound semiconductor layer, and A second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape, Comprising, In the portion of the base surface on which the first light reflection layer functioning as a concave mirror is formed, a first convex portion is formed with reference to the second surface of the first compound semiconductor layer, In the extending portion of the base surface where the dummy concave mirror portion is formed, a second convex portion is formed with reference to the second surface of the first compound semiconductor layer, In the portion of the base surface where the first light reflection layer of the light emitting element is not formed, a concave portion is formed with reference to the second surface of the first compound semiconductor layer Light emitting device.

18. A light emitting element array in which a plurality of light emitting elements are arranged, and Dummy light emitting elements surrounding the light emitting element array, Having, The light emitting element and the dummy light emitting element are A first compound semiconductor layer having a first surface and a second surface facing the first surface, An active layer facing the second surface of the first compound semiconductor layer, and A second compound semiconductor layer having a first surface facing the active layer and a second surface facing the first surface, Are stacked to form a stacked structure, Comprising, The light emitting element further includes A first light reflection layer formed on the base surface located on the first surface side of the first compound semiconductor layer, and A second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape, Comprising, In the portion of the base surface on which the first light reflection layer functioning as a concave mirror is formed, a first convex portion is formed with reference to the second surface of the first compound semiconductor layer, The dummy light emitting element further includes A dummy first light reflection layer composed of a dummy concave mirror portion formed on the extending portion of the base surface located on the first surface side of the first compound semiconductor layer, and A second light reflection layer formed on the second surface side of the second compound semiconductor layer and having a flat shape, Comprising, In the extending portion of the base surface on which the dummy first light reflection layer is formed, a second convex portion is formed with reference to the second surface of the first compound semiconductor layer, The dummy light emitting element does not emit light even when current flows through the stacked structure, In the dummy light emitting element, the value of the radius of curvature of the center portion of the second convex portion provided on the extending portion of the base surface is less than the value of the resonator length Light emitting device.

19. The light-emitting device according to claim 18, wherein the plurality of light-emitting elements and the dummy light-emitting element are driven under the same driving conditions at the same time.

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