Display device, light-emitting device, and lighting device

Abstract

A display device (1) according to the present invention comprises: a display area (DA) which comprises a first region (R1) that contains at least a part of the central part of the display area (DA) and a second region (R2) that contains at least a part of end parts (DAER, DAED, DAEL, DAEU) of the display area (DA); a first light emitting element (5R) which is provided in the first region (R1); and a second light emitting element (5R') which is provided in the second region (R2). The first light emitting element (5R) and the second light emitting element (5R') respectively comprise a first electrode (22) and a second electrode (25), and a nanoparticle layer that is positioned between the first electrode (22) and the second electrode (25) and contains nanoparticles. The concentration of halogen atoms contained in a first layer, which is the nanoparticle layer of the first light emitting element (5R), is higher than the concentration of halogen atoms contained in a second layer, which is the nanoparticle layer of the second light emitting element (5R').

Description

Technical Field

[0001] The present disclosure relates to a display device, a light-emitting device, and a lighting device.

Background Art

[0002] In recent years, various display devices including light-emitting elements having a nanoparticle layer containing nanoparticles as a part of a functional layer including a light-emitting layer have been developed. In particular, display devices equipped with QLED (Quantum dot Light Emitting Diode) or OLED (Organic Light Emitting Diode) have received high attention because they can achieve low power consumption, thinning, and high image quality.

[0003] In addition, light-emitting devices including a wavelength conversion layer having a light-emitting layer containing quantum dots and lighting devices including a light-emitting region having a light-emitting layer containing quantum dots have also been actively developed because they can achieve low power consumption and thinning.

[0004] When nanoparticles such as quantum dots are used as a part of a functional layer including a light-emitting layer, it is known that the luminous efficiency can be improved by using them in combination with a halogen ligand as compared with the case of using them in combination with a ligand other than the halogen ligand.

[0005] For example, Non-Patent Document 1 describes that by forming the amount of the halogen ligand contained in the quantum dot layer provided in the QLED to have a gradient in the stacking direction of the quantum dot layer, the carrier balance and the luminous efficiency can be improved.

Prior Art Documents

Non-Patent Documents

[0006]

Non-Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0007] The inventors of the present disclosure have found that a layer containing nanoparticles such as quantum dots and a relatively high concentration of halogen ligands is easily damaged at locations where mechanical stress occurs.

[0008] The QLED described in Non-Patent Document 1 is formed such that the amount of halogen ligand has a gradient in the stacking direction of the quantum dot layer. However, since it contains a relatively high concentration of halogen ligand, when such a QLED is provided over the entire display area of a display device, there is a problem that the QLED is damaged in a region close to the end of the display area, which is a region where mechanical stress is likely to occur.

[0009] Similarly, a light-emitting device and a lighting device including a layer containing nanoparticles such as quantum dots and a relatively high concentration of halogen ligands also have a problem that they are easily damaged at locations where mechanical stress occurs.

[0010] On the other hand, if the amount of halogen ligand used together with nanoparticles such as quantum dots is reduced, damage to a display device, a light-emitting device, and a lighting device including a light-emitting element can be suppressed, but there is a problem that the light-emitting efficiency is greatly reduced.

[0011] One aspect of the present disclosure has been made in view of the above problems, and an object thereof is to provide a display device, a light-emitting device, and a lighting device that can achieve both suppression of breakage at locations where mechanical stress occurs and luminous efficiency.

Means for Solving the Problems

[0012] In order to solve the above problems, the display device of the present disclosure includes a display area including a first area including at least a part of the central portion of the display area and a second area including at least a part of the end portion of the display area, a first light-emitting element provided in the first area, a second light-emitting element provided in the second area, and the first light-emitting element and the second light-emitting element each include a first electrode and a second electrode, and a nanoparticle layer including nanoparticles positioned between the first electrode and the second electrode, and the concentration of halogen atoms contained in a first layer which is the nanoparticle layer of the first light-emitting element is greater than the concentration of halogen atoms contained in a second layer which is the nanoparticle layer of the second light-emitting element.

[0013] In order to solve the above problems, the display device of the present disclosure includes a display area including a first area including at least a part of the central portion of the display area and a second area including at least a part of the end portion of the display area, a first light-emitting element provided in the first area, a second light-emitting element provided in the second area, and the first light-emitting element and the second light-emitting element each include a first electrode and a second electrode, and a nanoparticle layer including nanoparticles positioned between the first electrode and the second electrode, Taking the central position of the thickness of the maximum film thickness portion in each of the first layer which is the nanoparticle layer of the first light-emitting element and the second layer which is the nanoparticle layer of the second light-emitting element as the reference position, the number of portions where the third layer formed directly above the first layer penetrates into the first layer below the reference position is defined as the first number, and the number of portions where the fourth layer formed directly above the second layer penetrates into the second layer below the reference position is defined as the second number. The first number per unit length of the first layer is larger than the second number per unit length of the second layer.

[0014] In order to solve the above problems, the display device of the present disclosure includes a display area including a first area including at least a part of the central portion of the display area and a second area including at least a part of the end portion of the display area, a first light-emitting element provided in the first area, and a second light-emitting element provided in the second area. The first light-emitting element and the second light-emitting element each include a first electrode and a second electrode, and a nanoparticle layer containing nanoparticles located between the first electrode and the second electrode. Taking the central position of the thickness of the maximum film thickness portion in each of the third layer formed directly above the first layer which is the nanoparticle layer of the first light-emitting element and the fourth layer formed directly above the second layer which is the nanoparticle layer of the second light-emitting element as the reference position, the number of portions where the first layer penetrates into the third layer above the reference position is defined as the first number, and the number of portions where the second layer penetrates into the fourth layer above the reference position is defined as the second number. The first number per unit length of the first layer is larger than the second number per unit length of the second layer.

[0015] In order to solve the above problems, the light-emitting device of the present disclosure includes a wavelength conversion layer including a first area including at least a part of the central portion of the wavelength conversion area and a second area including at least a part of the end portion of the wavelength conversion area, A light-emitting unit that emits light incident on the wavelength conversion layer provided on the first surface side of the wavelength conversion layer. The concentration of halogen atoms contained in the light-emitting layer including the quantum dots in the first region is greater than the concentration of halogen atoms contained in the light-emitting layer including the quantum dots in the second region.

[0016] In order to solve the above problems, the lighting device of the present disclosure 100 cm 2 It has a light-emitting surface with a size of 100 cm or more, and includes a light-emitting region including a first region including at least a part of the central portion of the light-emitting region and a second region including at least a part of the end portion of the light-emitting region. The light-emitting region includes a first electrode and a second electrode, and a light-emitting layer including quantum dots provided between the first electrode and the second electrode. The concentration of halogen atoms contained in the first region is greater than the concentration of halogen atoms contained in the second region.

Advantages of the Invention

[0017] According to one aspect of the present disclosure, it is possible to provide a display device, a light-emitting device, and a lighting device that can achieve both suppression of breakage at a location where mechanical stress occurs and luminous efficiency.

Brief Description of the Drawings

[0018]

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Embodiments for Carrying Out the Invention

[0019] Regarding the embodiments of the present disclosure, the following description will be given based on FIGS. 1 to 18. Hereinafter, for the sake of convenience of explanation, components having the same functions as those described in a specific embodiment may be denoted by the same reference numerals, and the description thereof may be omitted.

[0020] 〔Embodiment 1〕 FIG. 1 is a plan view showing a schematic configuration of the display device 1 of Embodiment 1.

[0021] As shown in FIG. 1, the display device 1 includes a display area DA including an upper end portion DAEU, a right end portion DAER, a lower end portion DAED, and a left end portion DAEL. In the present embodiment, the case where the display device 1 includes the display area DA including the above-described four end portions will be described as an example, but the present invention is not limited thereto. The shape of the display area DA can be appropriately determined. For example, it may be formed in an n-sided shape (n is a natural number of 3 or more), or may be formed in a circular shape. When the display area DA is formed in an n-sided shape (n is a natural number of 3 or more), the display area DA includes n end portions (n is a natural number of 3 or more). When the display area DA is formed in a circular shape, the display area DA includes one curved end portion.

[0022] The display area DA of the display device 1 is provided with a plurality of pixels PIX, and each pixel PIX includes a red sub-pixel RSP, a green sub-pixel GSP, and a blue sub-pixel BSP. In the present embodiment, a case where one pixel PIX is composed of a red sub-pixel RSP, a green sub-pixel GSP, and a blue sub-pixel BSP will be described as an example, but it is not limited thereto. For example, one pixel PIX may further include sub-pixels of other colors in addition to the red sub-pixel RSP, the green sub-pixel GSP, and the blue sub-pixel BSP.

[0023] The red sub-pixel RSP provided in the display area DA of the display device 1 includes a red light-emitting element that emits red light, the green sub-pixel GSP provided in the display area DA of the display device 1 includes a green light-emitting element that emits green light, and the blue sub-pixel BSP provided in the display area DA of the display device 1 includes a blue light-emitting element that emits blue light.

[0024] In the present embodiment, a case where the display area DA of the display device 1 includes a first region R1 that includes the entire central portion of the display area DA and a second region R2 that includes all the ends of the display area DA, and the second region R2 surrounds the first region R1 in a frame shape will be described as an example, but it is not limited thereto. For example, the first region R1 may include at least a part of the central portion of the display area DA, and the second region R2 may include at least a part of the ends of the display area DA.

[0025] As will be described later, each of the red light-emitting element, the green light-emitting element, and the blue light-emitting element provided in the first region R1 and the second region R2 of the display area DA includes a nanoparticle layer including nanoparticles located between the first electrode and the second electrode. Note that the nanoparticles mean particles (dots) having a maximum width of less than 1000 nm. The shape of the nanoparticles is not particularly limited as long as the maximum width is satisfied, and is not limited to a spherical three-dimensional shape (circular cross-sectional shape). For example, a cross-sectional shape having a polygonal shape, a three-dimensional shape having a rod shape, a three-dimensional shape having a branched shape, a three-dimensional shape having irregularities on the surface, or a combination thereof may be used.

[0026] In this embodiment, an example will be described in which the concentration of halogen atoms contained in the nanoparticle layer provided in each of the red light-emitting element, green light-emitting element, and blue light-emitting element provided in the first region R1 is greater than the concentration of halogen atoms contained in the nanoparticle layer provided in each of the red light-emitting element, green light-emitting element, and blue light-emitting element provided in the second region R2. However, the present invention is not limited to this. For example, the concentration of halogen atoms contained in the nanoparticle layer provided in one or more light-emitting elements (first light-emitting elements) among the red light-emitting element, green light-emitting element, and blue light-emitting element provided in the first region R1 may be greater than the concentration of halogen atoms contained in the nanoparticle layer provided in one or more light-emitting elements (second light-emitting elements) among the red light-emitting element, green light-emitting element, and blue light-emitting element provided in the second region R2. Further, for example, the light-emitting element (first light-emitting element) provided with the nanoparticle layer having a higher concentration of halogen atoms provided in the first region R1 and the light-emitting element (second light-emitting element) provided with the nanoparticle layer having a lower concentration of halogen atoms provided in the second region R2 may be light-emitting elements that emit the same color.

[0027] In this embodiment, an example will be described in which the nanoparticle layer containing nanoparticles is a light-emitting layer containing quantum dots. However, the present invention is not limited to this. For example, the nanoparticle layer containing nanoparticles may be a charge transport layer such as a hole injection layer, hole transport layer, electron injection layer, and electron transport layer. When the nanoparticle layer containing nanoparticles is a hole injection layer or a hole transport layer, nanoparticles having hole transport properties can be used as the nanoparticles. The nanoparticles having hole transport properties are preferably nanoparticles containing at least one of Ni, Mg, Mo, Cu, Co, Cr, and Ti. For example, NiO particles can be preferably used as the nanoparticles having hole transport properties. Further, when the nanoparticle layer containing nanoparticles is an electron injection layer or an electron transport layer, nanoparticles having electron transport properties can be used as the nanoparticles. The nanoparticles having electron transport properties are preferably nanoparticles containing at least one of Zn, Mg, Ti, Si, Sn, W, Ta, Ba, Zr, Al, Y, and Hf. For example, ZnO particles can be preferably used as the nanoparticles having electron transport properties.

[0028] As shown in FIG. 1, the display device 1 includes a frame portion NDA. Since the frame portion NDA is a non-display area, pixels PIX including sub-pixels of each color are not provided.

[0029] FIG. 2 is a cross-sectional view showing a schematic configuration of a first region R1 in a display area DA of the display device 1 according to Embodiment 1. The schematic configuration of a second region R2 in the display area DA of the display device 1 according to Embodiment 1 is the same as the schematic configuration of the first region R1 shown in FIG. 2, except that the concentration of halogen atoms included in the nanoparticle layer provided for each of the red light-emitting element 5R, green light-emitting element 5G, and blue light-emitting element 5B provided in the first region R1 is greater than the concentration of halogen atoms included in the nanoparticle layer provided for each of the red light-emitting element, green light-emitting element, and blue light-emitting element provided in the second region R2.

[0030] As shown in FIG. 2, in the display area DA of the display device 1, on the substrate 12, a barrier layer 3, a thin-film transistor layer 4 including a transistor TR, a red light-emitting element 5R, a green light-emitting element 5G, a blue light-emitting element 5B, and a bank 23, a sealing layer 6, and a functional film 39 are provided in this order from the substrate 12 side.

[0031] The blue sub-pixel BSP provided in the first region R1 of the display area DA of the display device 1 includes a blue light-emitting element 5B, the green sub-pixel GSP provided in the first region R1 of the display area DA of the display device 1 includes a green light-emitting element 5G, and the red sub-pixel RSP provided in the first region R1 of the display area DA of the display device 1 includes a red light-emitting element 5R.

[0032] The substrate 12 may be, for example, a resin substrate made of a resin material such as polyimide, or a glass substrate. In the present embodiment, for the purpose of making the display device 1 a flexible display device, a case where a resin substrate made of a resin material such as polyimide is used as the substrate 12 will be described as an example, but it is not limited thereto. When the display device 1 is a non-flexible display device, a glass substrate can be used as the substrate 12.

[0033] The barrier layer 3 is a layer that prevents foreign substances such as water and oxygen from entering the transistor TR, the red light-emitting element 5R, the green light-emitting element 5G, and the blue light-emitting element 5B. For example, it can be formed by a CVD method and composed of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a laminated film thereof.

[0034] The transistor TR portion of the thin-film transistor layer 4 including the transistor TR includes a semiconductor film SEM and doped semiconductor films SEM’·SEM’’, an inorganic insulating film 16, a gate electrode G, an inorganic insulating film 18, an inorganic insulating film 20, a source electrode S and a drain electrode D, and a planarization film 21. The portion other than the transistor TR portion of the thin-film transistor layer 4 including the transistor TR includes the inorganic insulating film 16, the inorganic insulating film 18, the inorganic insulating film 20, and the planarization film 21.

[0035] The semiconductor films SEM·SEM’·SEM’’ may be composed of, for example, low-temperature polysilicon (LTPS) or an oxide semiconductor (for example, an In-Ga-Zn-O-based semiconductor). In this embodiment, the case where the transistor TR has a top-gate structure will be described as an example, but it is not limited thereto, and the transistor TR may have a bottom-gate structure.

[0036] The gate electrode G, the source electrode S, and the drain electrode D can be composed of, for example, a single-layer film or a laminated film of a metal containing at least one of aluminum, tungsten, molybdenum, tantalum, chromium, titanium, and copper.

[0037] The inorganic insulating film 16, the inorganic insulating film 18, and the inorganic insulating film 20 can be composed of, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a laminated film thereof formed by a CVD method.

[0038] The planarization film 21 can be composed of, for example, a coatable organic material such as polyimide or acrylic.

[0039] The red light-emitting element 5R included in the red sub-pixel RSP includes an anode which is the first electrode 22 in a layer above the planarization film 21, a functional layer 24R including a red light-emitting layer, and a cathode which is the second electrode 25. The green light-emitting element 5G included in the green sub-pixel GSP includes an anode which is the first electrode 22 in a layer above the planarization film 21, a functional layer 24G including a green light-emitting layer, and a cathode which is the second electrode 25. The blue light-emitting element 5B included in the blue sub-pixel BSP includes an anode which is the first electrode 22 in a layer above the planarization film 21, a functional layer 24B including a blue light-emitting layer, and a cathode which is the second electrode 25. Note that the insulating bank 23 covering the edge of the anode which is the first electrode 22 can be formed, for example, by applying an organic material such as polyimide or acrylic and then patterning it by a photolithography method.

[0040] In the present embodiment, a case where the red light-emitting element 5R, the green light-emitting element 5G, and the blue light-emitting element 5B have a stacked structure will be described as an example, but the present invention is not limited thereto, and the red light-emitting element 5R, the green light-emitting element 5G, and the blue light-emitting element 5B may have an inverted stacked structure. The red light-emitting element 5R having a stacked structure includes a first electrode 22 which is an anode and a second electrode 25 which is a cathode provided as a layer above the first electrode 22. The first electrode 2 2 andThe functional layer 24R including a red light-emitting layer provided between the second electrode 25 which is a cathode can be formed, for example, by laminating a hole injection layer, a hole transport layer, a red light-emitting layer, an electron transport layer, and an electron injection layer in this order from the side of the first electrode 22. Among the functional layer 24R including the red light-emitting layer, one or more of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer other than the red light-emitting layer may be appropriately omitted. In the present embodiment, the case where the functional layer 24R including the red light-emitting layer is formed by laminating a hole transport layer, a red light-emitting layer, and an electron transport layer in this order from the anode side which is the first electrode 22 will be described as an example, but the present invention is not limited thereto. The green light-emitting element 5G having a sequential lamination structure includes the first electrode 22 which is an anode and the second electrode 25 which is a cathode provided as an upper layer than the first electrode 22, and the functional layer 24G including a green light-emitting layer provided between the first electrode 22 which is an anode and the second electrode 25 which is a cathode can be formed, for example, by laminating a hole injection layer, a hole transport layer, a green light-emitting layer, an electron transport layer, and an electron injection layer in this order from the side of the first electrode 22. Among the functional layer 24G including the green light-emitting layer, one or more of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer other than the green light-emitting layer may be appropriately omitted. In the present embodiment, the case where the functional layer 24G including the green light-emitting layer is formed by laminating a hole transport layer, a green light-emitting layer, and an electron transport layer in this order from the anode side which is the first electrode 22 will be described as an example, but the present invention is not limited thereto. The blue light-emitting element 5B having a sequential lamination structure includes the first electrode 22 which is an anode and the second electrode 25 which is a cathode provided as an upper layer than the first electrode 22, and the functional layer 24B including a blue light-emitting layer provided between the first electrode 22 which is an anode and the second electrode 25 which is a cathode can be formed, for example, by laminating a hole injection layer, a hole transport layer, a blue light-emitting layer, an electron transport layer, and an electron injection layer in this order from the side of the first electrode 22. Among the functional layer 24B including the blue light-emitting layer, one or more of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer other than the blue light-emitting layer may be appropriately omitted. In the present embodiment, the case where the functional layer 24B including the blue light-emitting layer is formed by laminating a hole transport layer, a blue light-emitting layer, and an electron transport layer in this order from the anode side which is the first electrode 22 will be described as an example, but the present invention is not limited thereto.

[0041] Although not shown in the figure, the red light-emitting element having an inverted stack structure includes a first electrode that is a cathode and a second electrode that is an anode provided as an upper layer than the first electrode. The functional layer including the red light-emitting layer provided between the first electrode that is a cathode and the second electrode that is an anode can be configured, for example, by laminating an electron injection layer, an electron transport layer, a red light-emitting layer, a hole transport layer, and a hole injection layer in this order from the first electrode side. Among the functional layers including the red light-emitting layer, one or more of the electron injection layer, the electron transport layer, the hole transport layer, and the hole injection layer other than the red light-emitting layer may be appropriately omitted. The green light-emitting element having an inverted stack structure includes a first electrode that is a cathode and a second electrode that is an anode provided as an upper layer than the first electrode. The functional layer including the green light-emitting layer provided between the first electrode that is a cathode and the second electrode that is an anode can be configured, for example, by laminating an electron injection layer, an electron transport layer, a green light-emitting layer, a hole transport layer, and a hole injection layer in this order from the first electrode side. Among the functional layers including the green light-emitting layer, one or more of the electron injection layer, the electron transport layer, the hole transport layer, and the hole injection layer other than the green light-emitting layer may be appropriately omitted. The blue light-emitting element having an inverted stack structure includes a first electrode that is a cathode and a second electrode that is an anode provided as an upper layer than the first electrode. The functional layer including the blue light-emitting layer provided between the first electrode that is a cathode and the second electrode that is an anode can be configured, for example, by laminating an electron injection layer, an electron transport layer, a blue light-emitting layer, a hole transport layer, and a hole injection layer in this order from the first electrode side. Among the functional layers including the blue light-emitting layer, one or more of the electron injection layer, the electron transport layer, the hole transport layer, and the hole injection layer other than the blue light-emitting layer may be appropriately omitted.

[0042] In this embodiment, as an example of the hole transport layer included in each of the functional layer 24R including a red light-emitting layer, the functional layer 24G including a green light-emitting layer, and the functional layer 24B including a blue light-emitting layer, a case where poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenylamine)] (TFB), which is a material not containing nanoparticles, is used will be described. However, the present invention is not limited thereto. For example, N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzidine (poly-TPD) or polyvinylcarbazole (PVK) may be used. Further, as the hole transport layer included in each of the functional layer 24R including a red light-emitting layer, the functional layer 24G including a green light-emitting layer, and the functional layer 24B including a blue light-emitting layer, nanoparticles having hole transport properties as described above may be used.

[0043] In this embodiment, as an example of the electron transport layer included in each of the functional layer 24R including a red light-emitting layer, the functional layer 24G including a green light-emitting layer, and the functional layer 24B including a blue light-emitting layer, a case where 2,2′,2”-(1,3,5-benzenetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi), which is a material not containing nanoparticles, is used will be described. However, the present invention is not limited thereto. Nanoparticles having electron transport properties as described above may be used.

[0044] In addition, in this embodiment, as an example, each of the functional layer 24R including a red light-emitting layer, the functional layer 24G including a green light-emitting layer, and the functional layer 24B including a blue light-emitting layer is described, but it is not limited thereto. The example is a case where each of them includes a hole transport layer formed of the same material in the same process and an electron transport layer formed of the same material in the same process. For example, each of the functional layer 24R including a red light-emitting layer, the functional layer 24G including a green light-emitting layer, and the functional layer 24B including a blue light-emitting layer may further include at least one of a hole injection layer formed of the same material in the same process and an electron injection layer formed of the same material in the same process. Further, for example, each of the hole transport layers included in the functional layers 24R, 24G, and 24B may be formed of different materials. For example, the hole transport layers included in each of two of the functional layers 24R, 24G, and 24B may be formed of the same material in the same process, and only the hole transport layer included in the remaining one functional layer may be formed of a different material in a different process. Further, for example, each of the electron transport layers included in the functional layers 24R, 24G, and 24B may be formed of different materials. For example, the electron transport layers included in each of two of the functional layers 24R, 24G, and 24B may be formed of the same material in the same process, and only the electron transport layer included in the remaining one functional layer may be formed of a different material in a different process. Further, for example, each of the hole injection layers included in the functional layers 24R, 24G, and 24B may be formed of different materials. For example, the hole injection layers included in each of two of the functional layers 24R, 24G, and 24B may be formed of the same material in the same process, and only the hole injection layer included in the remaining one functional layer may be formed of a different material in a different process. Further, for example, each of the electron injection layers included in the functional layers 24R, 24G, and 24B may be formed of different materials. For example, the electron injection layers included in each of two of the functional layers 24R, 24G, and 24B may be formed of the same material in the same process, and only the electron injection layer included in the remaining one functional layer may be formed of a different material in a different process.

[0045] In this embodiment, a case where the red light-emitting element 5R, the green light-emitting element 5G, and the blue light-emitting element 5B are all QLEDs (quantum dot light-emitting diodes) will be described as an example, but the present invention is not limited thereto, and it is sufficient that one or more of the red light-emitting element 5R, the green light-emitting element 5G, and the blue light-emitting element 5B are QLEDs. For example, when one of the red light-emitting element 5R, the green light-emitting element 5G, and the blue light-emitting element 5B is a QLED, the remaining two may be OLEDs (organic light-emitting diodes). For example, when two of the red light-emitting element 5R, the green light-emitting element 5G, and the blue light-emitting element 5B are QLEDs, the remaining one may be an OLED.

[0046] Further, when at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer other than the light-emitting layer of each color among the functional layers 24R, 24G, and 24B including the light-emitting layer of each color is a nanoparticle layer containing nanoparticles, the red light-emitting element 5R, the green light-emitting element 5G, and the blue light-emitting element 5B may be OLEDs (organic light-emitting diodes) having an organic light-emitting layer not containing nanoparticles as the light-emitting layer.

[0047] When each of the red light-emitting element 5R, the green light-emitting element 5G, and the blue light-emitting element 5B is a QLED as in this embodiment, the light-emitting layer included in each light-emitting element of each color contains quantum dots. The quantum dots may have, for example, a core structure, a core / shell structure, a core / shell / shell structure, or a shell structure with a continuously varying core ratio. Note that the shell may completely cover the core or may cover a part of the core. In the case of a single-component system, the core part can be composed of, for example, Si, C, etc. In the case of a binary system, it can be composed of, for example, CdSe, CdS, CdTe, InP, GaP, InN, ZnSe, ZnS, ZnTe, etc. In the case of a ternary system, it can be composed of, for example, CdSeTe, GaInP, ZnSeTe, etc. In the case of a quaternary system, it can be composed of, for example, AIGS, etc. In the case of a binary system, the shell part can be composed of, for example, CdS, CdTe, CdSe, ZnS, ZnSe, ZnTe, etc. In the case of a ternary system, it can be composed of, for example, CdSSe, CdTeSe, CdSTe, ZnSSe, ZnSTe, ZnTeSe, AIP, etc.

[0048] Note that a quantum dot means a dot with a maximum width of 100 nm or less. The shape of the quantum dot only needs to satisfy the above maximum width and is not particularly limited, and is not limited to a spherical three-dimensional shape (circular cross-sectional shape). For example, it may have a polygonal cross-sectional shape, a rod-shaped three-dimensional shape, a branched three-dimensional shape, a three-dimensional shape with irregularities on the surface, or a combination thereof.

[0049] A control circuit including a transistor TR that controls each of the red light-emitting element 5R, the green light-emitting element 5G, and the blue light-emitting element 5B is provided in a thin-film transistor layer 4 including a transistor TR for each of the red sub-pixel RSP, the green sub-pixel GSP, and the blue sub-pixel BSP. Note that the control circuit including the transistor TR provided for each of the red sub-pixel RSP, the green sub-pixel GSP, and the blue sub-pixel BSP and the light-emitting element are also collectively referred to as a sub-pixel circuit.

[0050] The red light-emitting element 5R, green light-emitting element 5G, and blue light-emitting element 5B shown in Fig. 2 may be of a top emission type or a bottom emission type. Since the red light-emitting element 5R, green light-emitting element 5G, and blue light-emitting element 5B have a sequential stacking structure in which the second electrode 25, which is the cathode, is arranged as the upper layer rather than the first electrode 22, which is the anode, in order to make it a top emission type, the first electrode 22, which is the anode, may be formed of an electrode material that reflects visible light, and the second electrode 25, which is the cathode, may be formed of an electrode material that transmits visible light. In order to make it a bottom emission type, the first electrode 22, which is the anode, may be formed of an electrode material that transmits visible light, and the second electrode 25, which is the cathode, may be formed of an electrode material that reflects visible light. On the other hand, when the red light-emitting element, green light-emitting element, and blue light-emitting element have an inverted stacking structure in which the second electrode, which is the anode, is arranged as the upper layer rather than the first electrode, which is the cathode, in order to make it a top emission type, the first electrode, which is the cathode, may be formed of an electrode material that reflects visible light, and the second electrode, which is the anode, may be formed of an electrode material that transmits visible light. In order to make it a bottom emission type, the first electrode, which is the cathode, may be formed of an electrode material that transmits visible light, and the second electrode, which is the anode, may be formed of an electrode material that reflects visible light.

[0051] The electrode material that reflects visible light is not particularly limited as long as it can reflect visible light and has conductivity. For example, metal materials such as Al, Mg, Li, Ag, alloys of the metal materials, laminates of the metal materials and transparent metal oxides (e.g., indium tin oxide, indium zinc oxide, indium gallium zinc oxide, etc.), or laminates of the alloys and the transparent metal oxides can be mentioned.

[0052] On one hand, as the electrode material that transmits visible light, it is not particularly limited as long as it can transmit visible light and has conductivity. For example, it can include transparent metal oxides (such as indium tin oxide, indium zinc oxide, indium gallium zinc oxide, etc.), or thin films made of metal materials such as Al and Ag, or nano wires made of metal materials such as Al and Ag.

[0053] As the film formation method of the first electrode 22 and the second electrode 25, general electrode formation methods can be used. For example, physical vapor deposition (PVD) methods such as vacuum evaporation, sputtering, EB evaporation, and ion plating, or chemical vapor deposition (CVD) methods, etc. can be mentioned. Also, as the patterning method of the first electrode 22 and the second electrode 25, it is not particularly limited as long as it can accurately form a desired pattern. Specifically, photolithography, inkjet method, etc. can be mentioned.

[0054] The sealing layer 6 is a light-transmitting film. For example, it can be composed of an inorganic sealing film 26 that covers the second electrode 25, an organic film 27 above the inorganic sealing film 26, and an inorganic sealing film 28 above the organic film 27. The sealing layer 6 prevents the penetration of foreign substances such as water and oxygen into the red light-emitting element 5R, green light-emitting element 5G, and blue light-emitting element 5B.

[0055] The inorganic sealing films 26 and 28 are each inorganic films, and can be formed, for example, by a CVD method, and can be composed of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a laminated film thereof. The organic film 27 is a light-transmissive organic film having a planarizing effect, and can be composed of, for example, an applicable organic material such as acrylic. The organic film 27 may be formed, for example, by an inkjet method. In the present embodiment, the case where the sealing layer 6 is formed of two inorganic films and one organic film provided between the two inorganic films is taken as an example for explanation, but the lamination order of the two inorganic films and one organic film is not limited thereto. Further, the sealing layer 6 may be composed of only an inorganic film, may be composed of only an organic film, may be composed of one inorganic film and two organic films, or may be composed of two or more inorganic films and two or more organic films.

[0056] The functional film 39 is a film having at least one of, for example, an optical compensation function, a touch sensor function, and a protection function.

[0057] FIG. 3(a) is a cross-sectional view showing a schematic configuration of the red light-emitting element 5R provided in the first region R1 of the display region DA of the display device 1 of Embodiment 1, and FIG. 3(b) is a cross-sectional view showing a schematic configuration of the red light-emitting element 5R' provided in the second region R2 of the display region DA of the display device 1 of Embodiment 1. Although not shown, each of the green light-emitting element 5G and the blue light-emitting element 5B provided in the first region R1 of the display region DA of the display device 1 of Embodiment 1 has the same configuration as the red light-emitting element 5R shown in FIG. 3(a) except that the emission color of the light-emitting layer is different, and each of the green light-emitting element and the blue light-emitting element provided in the second region R2 of the display region DA of the display device 1 of Embodiment 1 has the same configuration as the red light-emitting element 5R' shown in FIG. 3(b) except that the emission color of the light-emitting layer is different.

[0058] The red light-emitting element 5R shown in Fig. 3(a) is provided on a thin-film transistor layer 4 including the transistor TR shown in Fig. 2, and includes a first electrode 22 which is an anode, a second electrode 25 which is a cathode, and a functional layer 24R including a red light-emitting layer provided between the first electrode 22 and the second electrode 25. The functional layer 24R including the red light-emitting layer has a structure in which a hole transport layer 24HT, a red light-emitting layer 24REM, and an electron transport layer 24ET are laminated in this order from the first electrode 22 side.

[0059] The red light-emitting layer 24REM includes a ligand containing a halogen atom and quantum dots. A ligand is a compound having a coordination function, and when both a ligand and quantum dots are included, it can be regarded that the ligand is coordinated to the quantum dots. The quantum dots QD shown in Fig. 3(a) mean quantum dots coordinated with a ligand containing a halogen atom.

[0060] The ligand containing a halogen atom means a ligand containing a halogen atom, for example, F, Cl, Br, and I, etc., and for example, F - , Cl - , Br - , I - etc. are attracted to the surface of the positively charged quantum dots in the state of anions. When a ligand containing a halogen atom is coordinated to the quantum dots, it is preferable because the stability and the electron injection property are improved. Among them, a ligand composed of fluorine having a strong coordination force to the quantum dots is more preferable. In the present embodiment, considering that the coordination force to the quantum dots is strong, the case where a ligand composed of fluorine, which is a ligand containing a halogen atom, is used will be taken as an example for explanation, but it is not limited thereto.

[0061] On the other hand, as shown in Fig. 3(a), when a ligand containing a halogen atom, for example, a ligand composed of fluorine which is a ligand composed of a halogen atom as in the present embodiment, is used, since the length of the ligand is short, aggregates QDA of the quantum dots QD are likely to occur.

[0062] The distance between quantum dots QD in the aggregate QDA of quantum dots QD is shorter than the distance between quantum dots QD outside the aggregate QDA of quantum dots QD. For example, the distance between quantum dots QD in the aggregate QDA of quantum dots QD is 1 nm or less, whereas the distance between quantum dots QD outside the aggregate QDA of quantum dots QD is greater than 1 nm.

[0063] The shape of the aggregate QDA of quantum dots QD is often spherical, but it is not limited thereto. When the shape of the aggregate QDA of quantum dots QD is spherical, for the cross-sectional area S of the aggregate QDA of quantum dots QD, 2 d satisfying S = π(d / 2) can be regarded as the diameter of the aggregate QDA.

[0064] Since the green light-emitting layer provided in the green light-emitting element 5G provided in the first region R1 of the display region DA of the display device 1 of Embodiment 1 contains quantum dots that emit green light and a ligand composed of fluorine, similar to the red light-emitting layer 24REM provided in the red light-emitting element 5R shown in FIG. 3(a), aggregates of quantum dots are likely to occur.

[0065] Since the blue light-emitting layer provided in the blue light-emitting element 5B provided in the first region R1 of the display region DA of the display device 1 of Embodiment 1 contains quantum dots that emit blue light and a ligand composed of fluorine, similar to the red light-emitting layer 24REM provided in the red light-emitting element 5R shown in FIG. 3(a), aggregates of quantum dots are likely to occur.

[0066] As described above, each of the red light-emitting element 5R, green light-emitting element 5G, and blue light-emitting element 5B provided in the first region R1 of the display region DA of the display device 1 of Embodiment 1 can achieve high luminous efficiency because the quantum dots are strongly protected by the ligand. On the other hand, aggregates QDA of quantum dots QD are likely to occur, and the light-emitting element is likely to be damaged at locations where stress is likely to occur.

[0067] Therefore, in the display device 1, the central portion of the display area DA, which is a portion where stress is less likely to occur, is defined as the first region R1, and each of the red light-emitting element 5R, the green light-emitting element 5G, and the blue light-emitting element 5B is provided in the first region R1, thereby realizing an improvement in the light-emitting efficiency of the light-emitting elements and suppression of damage to the light-emitting elements.

[0068] The red light-emitting element 5R' shown in FIG. 3(b) is provided on the thin-film transistor layer 4 including the transistor TR shown in FIG. 2, and includes a first electrode 22 which is an anode, a second electrode 25 which is a cathode, and a functional layer including a red light-emitting layer provided between the first electrode 22 and the second electrode 25. The functional layer including the red light-emitting layer has a configuration in which a hole transport layer 24HT, a red light-emitting layer 24REM', and an electron transport layer 24ET are laminated in this order from the side of the first electrode 22.

[0069] The red light-emitting layer 24REM' includes an organic ligand and quantum dots. The quantum dots QD' shown in FIG. 3(b) mean quantum dots coordinated with an organic ligand. As the organic ligand, for example, an organic ligand composed of an organic molecule having a certain length can be cited as an example in order to prevent aggregation of quantum dots, but it is not limited thereto. As the organic ligand, for example, oleylamine, oleic acid, dodecanethiol, trioctylphosphine, trioctylphosphine oxide, tributylphosphine oxide, oleyl alcohol, etc. can be used, but it is not limited thereto.

[0070] As shown in FIG. 3(b), when the red light-emitting layer 24REM' contains an organic ligand, aggregation of quantum dots can be prevented, and aggregates QDA of quantum dots QD as shown in FIG. 3(a) are less likely to occur.

[0071] In the green light-emitting layer provided in the green light-emitting element provided in the second region R2 of the display area DA of the display device 1 according to Embodiment 1, quantum dots that emit green light and an organic ligand are included. Therefore, similar to the red light-emitting layer 24REM' provided in the red light-emitting element 5R' shown in FIG. 3(b), aggregates of quantum dots are less likely to occur.

[0072] In the blue light-emitting layer provided in the blue light-emitting element provided in the second region R2 of the display region DA of the display device 1 according to the first embodiment, since a quantum dot that emits blue light and an organic ligand are included, similar to the red light-emitting layer 24REM' provided in the red light-emitting element 5R' shown in FIG. 3(b), aggregates of quantum dots are less likely to occur.

[0073] Each of the red light-emitting element 5R', the green light-emitting element, and the blue light-emitting element provided in the second region R2 of the display region DA of the display device 1 according to the first embodiment includes an organic ligand. Therefore, the protection of the quantum dots by the ligand is weak, and a decrease in the light emission efficiency of the light-emitting element is somewhat inevitable. On the other hand, since the generation of aggregates of quantum dots can be suppressed, even if stress occurs, the destruction of the light-emitting element can be suppressed.

[0074] Therefore, in the display device 1, a region including the end portion of the display region DA, which is a portion where stress is likely to occur, is defined as the second region R2, and each of the red light-emitting element 5R', the green light-emitting element, and the blue light-emitting element having a light-emitting layer including a quantum dot and an organic ligand is provided in the second region R2, thereby realizing suppression of damage to the light-emitting element.

[0075] The concentration of the aggregate QDA of the quantum dots QD, which is a nanoparticle aggregate included in the red light-emitting layer 24REM shown in FIG. 3(a), is higher than the concentration of the aggregate of the quantum dots QD' included in the red light-emitting layer 24REM' shown in FIG. 3(b).

[0076] In this embodiment, each of the red light-emitting element 5R, the green light-emitting element 5G, and the blue light-emitting element 5B provided in the first region R1 of the display region DA of the display device 1 includes a light-emitting layer containing a ligand composed of fluorine, and each of the red light-emitting element 5R', the green light-emitting element, and the blue light-emitting element provided in the second region R2 of the display region DA of the display device 1 includes a light-emitting layer containing an organic ligand. Thus, the concentration of halogen atoms contained in the nanoparticle layer provided in the light-emitting element (first light-emitting element) provided in the first region R1 is made higher than the concentration of halogen atoms contained in the nanoparticle layer provided in the light-emitting element (second light-emitting element) provided in the second region R2, but it is not limited thereto. For example, each of the red light-emitting element 5R, the green light-emitting element 5G, and the blue light-emitting element provided in the first region R1 of the display region DA of the display device 1 includes a light-emitting layer containing both a ligand composed of fluorine and an organic ligand, and each of the red light-emitting element 5R', the green light-emitting element, and the blue light-emitting element provided in the second region R2 of the display region DA of the display device 1 includes a light-emitting layer containing both a ligand composed of fluorine and an organic ligand. The concentration of halogen atoms in the light-emitting layer provided in each of the red light-emitting element 5R, the green light-emitting element 5G, and the blue light-emitting element provided in the first region R1 of the display region DA of the display device 1 may be made higher than the concentration of halogen atoms in the light-emitting layer provided in each of the red light-emitting element 5R', the green light-emitting element, and the blue light-emitting element provided in the second region R2 of the display region DA of the display device 1.

[0077] Note that the concentration of halogen atoms means the number of halogen atoms contained per unit volume, and can be calculated, for example, from the SEM-EDX measurement results of the cross-section of the light-emitting layer.

[0078] FIGS. 4(a) and 4(b) are diagrams showing an example of a phenomenon that can occur around the aggregate QDA of the quantum dots QD of the red light-emitting element 5R provided in the first region R1 of the display region DA of the display device 1 according to Embodiment 1.

[0079] As shown in Fig. 4(a), in the red light-emitting layer 24REM of the red light-emitting element 5R provided in the first region R1 of the display region DA of the display device 1, as described above, aggregates QDA of quantum dots QD are likely to occur. In such a case, the electron transport layer 24ET provided immediately above the red light-emitting layer 24REM, that is, the electron transport layer 24ET that is in contact with the red light-emitting layer 24REM and is provided as the layer immediately above the red light-emitting layer 24REM, may be formed to have protrusions 24ETP of the electron transport layer 24ET that penetrate into the red light-emitting layer 24REM, which is the lower layer. When the central position of the thickness of the maximum film thickness portion of the red light-emitting layer 24REM is taken as the reference position L3 shown in Fig. 4(a), the number of times the electron transport layer 24ET provided immediately above the red light-emitting layer 24REM, that is, the electron transport layer 24ET that is in contact with the red light-emitting layer 24REM and is provided as the layer immediately above the red light-emitting layer 24REM, penetrates below the reference position L3 of the red light-emitting layer 24REM, which is the lower layer, counted per unit length of the red light-emitting layer 24REM, is 1.

[0080] The unit length of the red light-emitting layer 24REM means the lateral width of the cross-sectional view of the red light-emitting element 5R taken by a scanning electron microscope (SEM) at a magnification such that the above-described penetration number can be easily observed, and may be appropriately set, for example, in the range of 600 nm or more and 1000 nm or less.

[0081] The thickness of the maximum film thickness portion of the red light-emitting layer 24REM means the maximum portion of the thickness of the red light-emitting layer 24REM in the direction orthogonal to the unit length of the red light-emitting layer 24REM in the cross-sectional view of the red light-emitting element 5R taken by a scanning electron microscope (SEM) at a magnification such that the above-described penetration number can be easily observed. In the cross-sectional view of the red light-emitting element 5R taken by a scanning electron microscope (SEM) at a magnification such that the above-described penetration number can be easily observed, when the red light-emitting layer 24REM is observed to have a substantially uniform thickness, the substantially uniform thickness of the red light-emitting layer 24REM can be regarded as the thickness of the maximum film thickness portion of the red light-emitting layer 24REM. The central position of the thickness of the maximum film thickness portion means the position that divides the maximum film thickness portion into two with a thickness equal to half of the thickness of the maximum film thickness portion.

[0082] When the electron transport layer 24ET penetrates below the reference position L3 of the red light-emitting layer 24REM, it means that the protrusion 24ETP of the electron transport layer 24ET is formed up to the region between the reference position L3 of the red light-emitting layer 24REM and the hole transport layer 24HT.

[0083] As shown in Fig. 3(b), in the red light-emitting layer 24REM' of the red light-emitting element 5R' provided in the second region R2 of the display region DA of the display device 1, no aggregate of quantum dots QD' is generated. In such a case, when the central position of the thickness of the maximum film thickness portion of the red light-emitting layer 24REM' is taken as the reference position L1 shown in Fig. 3(b), the number of the electron transport layer 24ET provided directly above the red light-emitting layer 24REM', that is, the electron transport layer 24ET provided in contact with the red light-emitting layer 24REM' and as the layer immediately above the red light-emitting layer 24REM' that penetrates below the reference position L1 of the lower red light-emitting layer 24REM' counted per unit length of the red light-emitting layer 24REM' is 0, which is smaller than 1 which is the number of the electron transport layer 24ET that penetrates below the reference position L3 of the red light-emitting layer 24REM described above.

[0084] It is preferable to set the unit length of the red light-emitting layer 24REM' to be the same as the unit length of the red light-emitting layer 24REM described above.

[0085] The thickness of the maximum film thickness portion of the red light-emitting layer 24REM' means the maximum portion of the thickness of the red light-emitting layer 24REM' in the direction orthogonal to the unit length of the red light-emitting layer 24REM' in the cross-sectional view of the scanning electron microscope (SEM) of the red light-emitting element 5R' photographed by setting the unit length of the red light-emitting layer 24REM' to be the same as the unit length of the red light-emitting layer 24REM. In the cross-sectional view of the scanning electron microscope (SEM) of the red light-emitting element 5R' photographed by setting the unit length of the red light-emitting layer 24REM' to be the same as the unit length of the red light-emitting layer 24REM, when the red light-emitting layer 24REM' is observed to have a substantially uniform thickness, the substantially uniform thickness of the red light-emitting layer 24REM' can be regarded as the thickness of the maximum film thickness portion of the red light-emitting layer 24REM'.

[0086] When the electron transport layer 24ET penetrates below the reference position L1 of the red light emitting layer 24REM', it means that the protrusion 24ETP of the electron transport layer 24ET is formed up to the region between the reference position L1 of the red light emitting layer 24REM' and the hole transport layer 24HT.

[0087] As shown in FIG. 4(b), in the red light emitting layer 24REM of the red light emitting element 5R provided in the first region R1 of the display region DA of the display device 1, as described above, aggregates QDA of quantum dots QD are likely to occur. In such a case, the electron transport layer 24ET provided immediately above the red light emitting layer 24REM, that is, the electron transport layer 24ET that is in contact with the red light emitting layer 24REM and provided as the layer immediately above the red light emitting layer 24REM, the protrusion QDAP of the aggregate QDA of the quantum dots QD may enter. When the central position of the thickness of the maximum film thickness portion of the electron transport layer 24ET is taken as the reference position L4 shown in FIG. 4(b), when the number of times the red light emitting layer 24REM penetrates above the reference position L4 of the electron transport layer 24ET is counted per unit length of the red light emitting layer 24REM, it becomes 1.

[0088] The thickness of the maximum film thickness portion of the electron transport layer 24ET means the maximum portion of the thickness of the electron transport layer 24ET in the direction orthogonal to the unit length of the red light emitting layer 24REM in a cross-sectional view of the scanning electron microscope (SEM) of the red light emitting element 5R photographed at a magnification that allows the above-described penetration number to be easily observed. In the cross-sectional view of the scanning electron microscope (SEM) of the red light emitting element 5R photographed at a magnification that allows the above-described penetration number to be easily observed, when the electron transport layer 24ET is observed to have a substantially uniform thickness, the substantially uniform thickness of the electron transport layer 24ET can be regarded as the thickness of the maximum film thickness portion of the electron transport layer 24ET.

[0089] When the red light emitting layer 24REM penetrates above the reference position L4 of the electron transport layer 24ET, it means that the protrusion QDAP of the aggregate QDA of the quantum dots QD is formed up to the region between the reference position L4 of the electron transport layer 24ET and the second electrode 25.

[0090] As shown in FIG. 3(b), in the red light-emitting layer 24REM' of the red light-emitting element 5R' provided in the second region R2 of the display region DA of the display device 1, no aggregates of quantum dots QD' are generated. In such a case, when the central position of the thickness of the maximum film thickness portion of the electron transport layer 24ET is defined as the reference position L2 shown in FIG. 3(b), the number of the red light-emitting layer 24REM' that enters above the reference position L2 of the electron transport layer 24ET provided immediately above the red light-emitting layer 24REM', that is, the electron transport layer 24ET that is in contact with the red light-emitting layer 24REM' and is provided as the layer immediately above the red light-emitting layer 24REM', when counted per unit length of the red light-emitting layer 24REM', is 0, which is smaller than 1, which is the number of the above-described red light-emitting layer 24REM that enters above the reference position L4 of the electron transport layer 24ET.

[0091] It is preferable to set the unit length of the red light-emitting layer 24REM' to be the same as the unit length of the above-described red light-emitting layer 24REM.

[0092] The thickness of the maximum film thickness portion of the electron transport layer 24ET means the maximum portion of the thickness of the electron transport layer 24ET in the direction orthogonal to the unit length of the red light-emitting layer 24REM' in a cross-sectional view of the red light-emitting element 5R' taken by a scanning electron microscope (SEM) with the unit length of the red light-emitting layer 24REM' set to be the same as the unit length of the red light-emitting layer 24REM. In the cross-sectional view of the red light-emitting element 5R' taken by a scanning electron microscope (SEM) with the unit length of the red light-emitting layer 24REM' set to be the same as the unit length of the red light-emitting layer 24REM, when the electron transport layer 24ET is observed to have a substantially uniform thickness, the substantially uniform thickness of the electron transport layer 24ET can be regarded as the thickness of the maximum film thickness portion of the electron transport layer 24ET.

[0093] That the red light-emitting layer 24REM' enters above the reference position L2 of the electron transport layer 24ET means that the protrusion QDAP of the aggregate QDA of the quantum dots QD is formed up to the region between the reference position L2 of the electron transport layer 24ET and the second electrode 25.

[0094] As described above, in the present embodiment, the concentration of halogen atoms contained in the first layer, which is the nanoparticle layer of the first light-emitting element provided in the first region R1 of the display region DA of the display device 1, is greater than the concentration of halogen atoms contained in the second layer, which is the nanoparticle layer of the second light-emitting element provided in the second region R2 of the display region DA of the display device 1. Since the first light-emitting element and the second light-emitting element have a sequential stacking structure, the first layer and the second layer are light-emitting layers containing quantum dots. Taking as an example the case where the third layer formed immediately above the first layer and the fourth layer formed immediately above the second layer are electron transport layers, the present invention is not limited thereto. The third layer formed immediately above the first layer and the fourth layer formed immediately above the second layer may be electron injection layers. Further, when the first light-emitting element and the second light-emitting element have an inverted stacking structure, the third layer formed immediately above the first layer and the fourth layer formed immediately above the second layer may be a hole transport layer or a hole injection layer.

[0095] When the first light-emitting element and the second light-emitting element have a sequential stacking structure, the first layer and the second layer are hole transport layers, and the third layer formed immediately above the first layer and the fourth layer formed immediately above the second layer may be light-emitting layers. Further, when the first light-emitting element and the second light-emitting element have an inverted stacking structure, the first layer and the second layer are hole transport layers, and the third layer formed immediately above the first layer and the fourth layer formed immediately above the second layer may be either a hole injection layer or one of the first electrode and the second electrode, which are electrode layers.

[0096] When the first light-emitting element and the second light-emitting element have a sequential stacking structure, the first layer and the second layer are electron transport layers, and the third layer formed immediately above the first layer and the fourth layer formed immediately above the second layer may be either an electron injection layer or one of the first electrode and the second electrode, which are electrode layers. Further, when the first light-emitting element and the second light-emitting element have an inverted stacking structure, the first layer and the second layer are electron transport layers, and the third layer formed immediately above the first layer and the fourth layer formed immediately above the second layer may be a light-emitting layer.

[0097] When the first light-emitting element and the second light-emitting element have an inverted stacking structure, the first layer and the second layer are hole injection layers, and the third layer formed immediately above the first layer and the fourth layer formed immediately above the second layer may be either the first electrode or the second electrode, which are electrode layers.

[0098] When the first light-emitting element and the second light-emitting element have a normal stacking structure, the first layer and the second layer are electron injection layers, and the third layer formed immediately above the first layer and the fourth layer formed immediately above the second layer may be either the first electrode or the second electrode, which are electrode layers.

[0099] FIG. 5 is a diagram for explaining the deflection of the substrate 12 due to its own weight in the display device 1 of Embodiment 1.

[0100] As shown in FIG. 5, the deflection δ(x) of the substrate 12 at the position x due to the uniformly distributed load (assuming the substrate's own weight) when the two ends of the substrate 12 with a length L are clamped is given by the following formula.

[0101]

Equation

[0102]

Equation

[0103]

Equation

[0104] Also, x = 0.21 and x = 0.79 that satisfy D’’(x)=0 are inflection points, and the regions outside this point (x = 0 to 0.21, x = 0.79 to 1) are more likely to be affected by the deflection of the substrate 12. Therefore, it is even more preferable to set it as the second region R2 of the above-described display region DA.

[0105] The second region R2 of the display region DA shown in FIG. 1 is a region (third region) formed with a width greater than 0% and less than or equal to 9% of the length of the substrate 12 in the first direction D1 from each of the two end portions D2ER and D2EL of the substrate 12 formed along the second direction D2, and from each of the two end portions D1EU and D1ED of the substrate 12 formed along the first direction D1. It is preferably provided in at least one of the regions (fourth region) formed with a width greater than 0% and less than or equal to 9% of the length of the substrate 12 in the second direction D2.

[0106] Also, the second region R2 of the display region DA shown in FIG. 1 is a region (third region) formed with a width greater than 9% and less than or equal to 21% of the length of the substrate 12 in the first direction D1 from each of the two end portions D2ER and D2EL of the substrate 12 formed along the second direction D2, and from each of the two end portions D1EU and D1ED of the substrate 12 formed along the first direction D1. It is even more preferable to be provided in at least one of the regions (fourth region) formed with a width greater than 9% and less than or equal to 21% of the length of the substrate 12 in the second direction D2.

[0107] FIG. 6 is a diagram for explaining portions where stress is likely to occur when a layer having a different coefficient of thermal expansion from the substrate 12 is provided on the substrate 12 provided in the display device 1 of Embodiment 1.

[0108] Generally, since the coefficients of thermal expansion of the substrate 12 and the respective layers provided on the substrate 12 are different, stress is generated when heated. For example, when a first thin plate with a thickness h1, a Young's modulus E1, and a coefficient of thermal expansion α1 and a second thin plate with a thickness h2, a Young's modulus E2, and a coefficient of thermal expansion α2 are in contact with the substrate 12, the radius of curvature ρ of the deformation due to a temperature rise ΔT is given by the following formula. However, h = h1 + h2, m = E1 / E2, and n = h1 / h2.

[0109]

Equation

[0110]

Equation

Equation

[0111]

Equation

[0112] Similarly, for the θ at which the displacement is 50%, θ / θ0 = 0.71 can be obtained as shown below.

[0113] [Number] Outside this θ (29% of the end of half of the substrate 12 = 100% - 71%), that is, 15% of the end of the substrate 12 is more likely to receive stress due to thermal expansion, so it is more preferable to set it as the second region R2 of the above-described display region DA.

[0114] The second region R2 of the display region DA shown in FIG. 1 is a region (third region) formed with a width greater than 0% and equal to or less than 3% of the length of the substrate 12 in the first direction D1 from each of the two ends D2ER and D2EL of the substrate 12 formed along the second direction D2, and a region (fourth region) formed with a width greater than 0% and equal to or less than 3% of the length of the substrate 12 in the second direction D2 from each of the two ends D1EU and D1ED of the substrate 12 formed along the first direction D1. It is preferably provided in at least one of them.

[0115] Further, the second region R2 of the display region DA shown in FIG. 1 is a region (third region) formed with a width greater than 3% and equal to or less than 15% of the length of the substrate 12 in the first direction D1 from each of the two ends D2ER and D2EL of the substrate 12 formed along the second direction D2, and a region (fourth region) formed with a width greater than 3% and equal to or less than 15% of the length of the substrate 12 in the second direction D2 from each of the two ends D1EU and D1ED of the substrate 12 formed along the first direction D1. It is more preferably provided in at least one of them.

[0116] Furthermore, the second region R2 of the display region DA shown in FIG. 1 is a region (third region) formed with a width greater than or equal to 3% and equal to or less than 15% of the length of the substrate 12 in the first direction D1 from each of the two ends D2ER and D2EL of the substrate 12 formed along the second direction D2, and a region (fourth region) formed with a width greater than or equal to 3% and equal to or less than 15% of the length of the substrate 12 in the second direction D2 from each of the two ends D1EU and D1ED of the substrate 12 formed along the first direction D1. It is most preferably provided in at least one of them.

[0117] FIG. 7 is a diagram for explaining the coverage rate of the quantum dots by the halogen ligand HLIG in the light-emitting layer provided in the light-emitting elements included in each sub-pixel of the display device 1 of Embodiment 1.

[0118] Let r be the area of the halogen ligand HLIG showing the coverage rate of the quantum dots by the halogen ligand HLIG / the surface area of the quantum dots.

[0119] To prevent aggregation of the quantum dots, an organic ligand OLIG can be used. As shown in FIG. 7, the organic ligand OLIG exists in the 1-r portion of the surface area of the quantum dots where there is no halogen ligand HLIG.

[0120] For simplicity, considering the quantum dot dispersion solution in one dimension, assume that when there is a halogen ligand HLIG between two quantum dots (probability r), the distance between the two quantum dots becomes small and they aggregate, and when there is an organic ligand OLIG (probability 1-r), the distance between the two quantum dots becomes large and they do not aggregate.

[0121] The probability P(n) that n quantum dots aggregate is given by the following formula.

[0122]

Equation

[0123]

Equation

[0124] In the first region R1 of the above-described display region DA, if the size of the aggregate of quantum dots is less than the thickness obtained by stacking five quantum dots (E < 5, that is, r < 0.8), the light-emitting layer containing the quantum dots can be configured to be substantially flat, and problems are less likely to occur in the device characteristics.

[0125] From the above, the coverage rate of the nanoparticles in the first region R1 of the display region DA by the halogen atoms is preferably 67% or more and 80% or less, and the coverage rate of the nanoparticles in the second region R2 of the display region DA by the halogen atoms is preferably 0% or more and less than 67%.

[0126] Note that r, which is (the area of the halogen ligand HLIG / the surface area of the quantum dot), can be obtained as follows, for example, from the results of cross-sectional SEM-EDX (the number of halogen atoms per unit volume N).

[0127] r = the number of halogen atoms per unit volume N × the volume of the quantum dot × the area occupied by one halogen atom / the surface area of the quantum dot, that is, r can be obtained as shown below. However, d Q is the diameter of the quantum dot, and d h is twice the ionic radius of the halide ion, and the ionic radius is 0.13 nm in the case of F.

[0128]

Equation

[0129] FIG. 8(a) to FIG. 8(o) are diagrams showing an example of a process of forming a quantum dot layer, which is part of a process of forming a light-emitting layer provided in a light-emitting element included in each sub-pixel of the display device 1 according to Embodiment 1, by a lift-off method. Note that in FIGS. 8(a) to 8(o), illustration of the first electrode 22 provided in the light-emitting element of each color is omitted.

[0130] The patterning process of the red light-emitting layer 24REM’, green light-emitting layer 24GEM’, and blue light-emitting layer 24BEM’ using the lift-off method includes a step of forming a first photosensitive resin layer 40A on the hole transport layer 24HT shown in Fig. 8(a), a step of exposing the first photosensitive resin layer 40A through a mask M1 shown in Fig. 8(b), a developing step using a developer shown in Fig. 8(c) to form an opening in the first photosensitive resin layer 40A, a step of applying and heat-treating a solution containing red light-emitting quantum dots shown in Fig. 8(d) to obtain the red light-emitting layer 24REM’, and a step of removing the first photosensitive resin layer 40A using a resist remover shown in Fig. 8(e) to obtain the patterned red light-emitting layer 24REM’. The patterning process of the red light-emitting layer 24REM’, green light-emitting layer 24GEM’, and blue light-emitting layer 24BEM’ using the lift-off method further includes a step of forming a second photosensitive resin layer 40B on the red light-emitting layer 24REM’ and the hole transport layer 24HT shown in Fig. 8(f), a step of exposing the second photosensitive resin layer 40B through a mask M2 shown in Fig. 8(g), a developing step using a developer shown in Fig. 8(h) to form an opening in the second photosensitive resin layer 40B, a step of applying and heat-treating a solution containing green light-emitting quantum dots shown in Fig. 8(i) to obtain the green light-emitting layer 24GEM’, and a step of removing the second photosensitive resin layer 40B using a resist remover shown in Fig. 8(j) to obtain the patterned green light-emitting layer 24GEM’. The patterning process of the red light-emitting layer 24REM’, green light-emitting layer 24GEM’, and blue light-emitting layer 24BEM’ using the lift-off method further includes a step of forming a third photosensitive resin layer 40C on the red light-emitting layer 24REM’, green light-emitting layer 24GEM’, and the hole transport layer 24HT shown in Fig. 8(k), a step of exposing the third photosensitive resin layer 40C through a mask M3 shown in Fig. 8(l), a developing step using a developer shown in Fig. 8(m) to form an opening in the third photosensitive resin layer 40C, a step of applying and heat-treating a solution containing blue light-emitting quantum dots shown in Fig. 8(n) to obtain the blue light-emitting layer 24BEM’, and a step of removing the third photosensitive resin layer 40C using a resist remover shown in Fig. 8(o) to obtain the patterned blue light-emitting layer 24BEM’.Note that, as the resist remover shown in FIGS. 8(e), 8(j), and 8(o), for example, PGMEA or the like can be used, but it is not limited thereto. Further, in the present embodiment, the case where the red light-emitting layer 24REM’, the green light-emitting layer 24GEM’, and the blue light-emitting layer 24BEM’ are formed in this order has been described as an example, but it is not limited thereto, and any color light-emitting layer may be formed first.

[0131] FIGS. 9(a) to 9(c) are diagrams showing an example of a process of incorporating the halogen ligand HLIG only into the first region R1 of the display region DA of the display device 1 according to Embodiment 1.

[0132] As shown in FIG. 9(a), a mask M4 having an opening in a region corresponding to the first region R1 of the display region DA and having a light-shielding portion in a region corresponding to the second region R2 of the display region DA is disposed on a substrate on which the red light-emitting layer 24REM’, the green light-emitting layer 24GEM’, and the blue light-emitting layer 24BEM’ shown in FIG. 8(o) are formed.

[0133] Thereafter, as shown in FIG. 9(b), with the mask M4 placed, a solution containing the halogen ligand HLIG is applied to form a region HLIGR having a high concentration of the halogen ligand HLIG only in the first region R1, which is the central portion of the display region DA. Note that, before applying the solution containing the halogen ligand HLIG, at least a part of the organic ligand OLIG in the first region R1, which is the central portion of the display region DA, may be removed with an alcohol solution as necessary. As the alcohol solution, for example, methanol or ethanol can be preferably used, but it is not limited thereto.

[0134] Then, as shown in FIG. 9(c), by removing the mask M4, the concentration of the halogen atom contained in each of the red light-emitting layer 24REM, the green light-emitting layer, and the blue light-emitting layer provided in the first region R1 can be made higher than the concentration of the halogen atom contained in each of the red light-emitting layer 24REM’, the green light-emitting layer 24GEM’, and the blue light-emitting layer 24BEM’ provided in the second region R2.

[0135] FIGS. 10(a) to 10(d) are diagrams showing another example of the step of incorporating the halogen ligand HLIG only into the first region R1 in the display region DA of the display device 1 according to Embodiment 1.

[0136] As shown in FIG. 10(a), a fourth photosensitive resin layer 40D is formed over the entire surface of a substrate on which a red light-emitting layer 24REM′, a green light-emitting layer 24GEM′, and a blue light-emitting layer 24BEM′ shown in FIG. 8(o) are formed.

[0137] Thereafter, as shown in FIG. 10(b), after exposure using a mask (not shown), development is performed to pattern the fourth photosensitive resin layer 40D, and an opening can be formed in a region corresponding to the first region R1 of the display region DA.

[0138] Thereafter, as shown in FIG. 10(c), with the fourth photosensitive resin layer 40D having an opening in the region corresponding to the first region R1 of the display region DA being formed, a solution containing the halogen ligand HLIG is applied, whereby a region HLIGR with a high concentration of the halogen ligand HLIG can be formed only in the first region R1 which is the central part of the display region DA. Before applying the solution containing the halogen ligand HLIG, if necessary, at least a part of the organic ligand OLIG in the first region R1 which is the central part of the display region DA may be removed with an alcohol solution. As the alcohol solution, for example, methanol or ethanol can be preferably used, but it is not limited thereto.

[0139] Then, as shown in FIG. 10(d), by removing the fourth photosensitive resin layer 40D, the concentration of the halogen atom contained in each of the red light-emitting layer 24REM, the green light-emitting layer, and the blue light-emitting layer provided in the first region R1 can be made higher than the concentration of the halogen atom contained in each of the red light-emitting layer 24REM′, the green light-emitting layer 24GEM′, and the blue light-emitting layer 24BEM′ provided in the second region R2.

[0140] FIG. 11 is a diagram showing an image signal conversion unit 45, a sub-pixel circuit SPDR, and various wirings provided in the display device 1 of Embodiment 1.

[0141] FIG. 12 is a diagram showing an example of the sub-pixel circuit SPDR provided in the display device 1 of Embodiment 1.

[0142] As shown in FIG. 12, the sub-pixel circuit SPDR(n, n) includes, for example, a transistor Tr1, a transistor Tr2, and a capacitor C1. The transistor Tr1 is a driving transistor (for example, the transistor TR of the thin film transistor layer 4 shown in FIG. 2) that drives the red light emitting element 5R'. The source electrode of the transistor Tr1 is connected to a power line PLn to which a voltage of the first level (for example, a high level) is applied. The gate electrode of the transistor Tr1 is connected to the drain electrode of the transistor Tr2 and one terminal of the capacitor C1. The drain electrode of the transistor Tr1 is connected to the anode electrode of the red light emitting element 5R'. The transistor Tr2 is a selection transistor that selects a light emitting element to emit light in response to a scanning signal supplied from the scanning line SCLn. The source electrode of the transistor Tr2 is connected to the signal line SLn. The gate electrode of the transistor Tr2 is connected to the scanning line SCLn. The drain electrode of the transistor Tr2 is connected to the gate electrode of the transistor Tr1 and one terminal of the capacitor C1.

[0143] The cathode electrode of the red light emitting element 5R' on the side opposite to the anode electrode connected to the transistor Tr1 and the other terminal of the capacitor C1 on the side opposite to one terminal are each grounded by being connected to a GND line to which a voltage of the second level (for example, a low level) is applied.

[0144] When a scanning signal is supplied from the scanning line SCLn to the transistor Tr2, the transistor Tr2 is turned on. At the same time, the image signal conversion unit 45 shown in FIG. 11 supplies a data signal to the signal lines SL1 to SLn and transmits it to the transistor Tr1 via the transistor Tr2. As a result, a current corresponding to the data signal flows through the light-emitting elements provided in each sub-pixel circuit SPDR(1, 1) to SPDR(n, n + 1), causing the light-emitting elements to emit light.

[0145] As described above, in the display device 1, the concentration of halogen atoms contained in each of the red light-emitting layer 24REM, the green light-emitting layer, and the blue light-emitting layer provided in the first region R1 is greater than the concentration of halogen atoms contained in each of the red light-emitting layer 24REM', the green light-emitting layer 24GEM', and the blue light-emitting layer 24BEM' provided in the second region R2. Therefore, the element characteristics of the first light-emitting element provided in the first region R1 are different from the element characteristics of the second light-emitting element provided in the second region R2.

[0146] Therefore, in the present embodiment, after manufacturing is completed, a characteristic inspection (measurement of the relationship between current density J and luminance L) of each sub-pixel is performed and stored in the image signal conversion unit 45. For example, if the luminance L is proportional to the current density J, then L = AJ (where A represents a coefficient and luminous efficiency). When each sub-pixel is driven at a predetermined current density J0, the luminance L0 is measured, and the coefficient A (= L0 / J0) is obtained. The image signal conversion unit 45 stores the coefficient A for each sub-pixel. When driving the sub-pixel, based on the stored coefficient A, the data signal is determined and output so that the current density J1 (= L1 / A) at which each sub-pixel emits light at a predetermined luminance L1 is obtained.

[0147] In the display device 1, in each of the first light-emitting element provided in the first region R1 and the second light-emitting element provided in the second region R2, as described above, since the luminous efficiency of the first light-emitting element is higher than the luminous efficiency of the second light-emitting element, the drive current corresponding to the same luminance is smaller in the first light-emitting element than in the second light-emitting element.

[0148] The display device 1 of this embodiment includes an image signal conversion unit 45 shown in FIG. 11. The image signal conversion unit 45 stores a first coefficient (A = L1 / J1) indicating the relationship between a predetermined current density J1 in the first light-emitting element and the luminance L1 corresponding to the predetermined current density J1, and a second coefficient (B = L2 / J2) indicating the relationship between a predetermined current density J2 in the second light-emitting element and the luminance L2 corresponding to the predetermined current density J2. The image signal conversion unit 45 converts a first data signal regarding the drive current of the first light-emitting element based on the first coefficient and supplies it to the first light-emitting element, and converts a second data signal regarding the drive current of the second light-emitting element based on the second coefficient and supplies it to the second light-emitting element.

[0149] In this embodiment, as shown in FIG. 1, the display area DA includes a first area R1 and a second area R2, and the case where the second area R2 surrounds the first area R1 in a frame shape is taken as an example for explanation, but it is not limited thereto. Although not shown, for example, the second area R2 surrounding the first area R1 in a frame shape may be further composed of n (n is a natural number of 2 or more) frame-shaped areas. For example, when n = 2 and the second area R2 surrounding the first area R1 in a frame shape is composed of two frame-shaped areas, the second area R2 is composed of a first second area in a frame shape closer to the first area R1 and a second second area in a frame shape farther from the first area R1, and the concentration of halogen atoms contained in the nanoparticle layer provided in the second light-emitting element provided in the first second area may be larger than the concentration of halogen atoms contained in the nanoparticle layer provided in the second light-emitting element provided in the second second area. With such a configuration, while reducing the possibility of destruction of the second light-emitting element, the luminous efficiency of the second light-emitting element provided in the first second area can be improved compared to the luminous efficiency of the second light-emitting element provided in the second second area.

[0150] 〔Embodiment 2〕 Next, based on FIG. 13, Embodiment 2 of the present disclosure will be described. In the display devices 1a, 1b, 1c, and 1d of the present embodiment, the shape of the first region R1 including at least a part of the central portion of the display region DA and the shape of the second region R2 including at least a part of the end portion of the display region DA are different, which is different from the display device 1 described in Embodiment 1. Other aspects are the same as those described in Embodiment 1. For the sake of convenience of explanation, members having the same functions as those shown in the drawings of Embodiment 1 are denoted by the same reference numerals, and the description thereof is omitted.

[0151] FIGS. 13(a) to 13(d) are plan views showing an example of the display devices 1a, 1b, 1c, and 1d of Embodiment 2.

[0152] As shown in FIG. 13(a), the display device 1a includes a substrate 12 having a length in a first direction D1 which is the longitudinal direction and a length in a second direction D2 orthogonal to the first direction D1, and includes a display region DA and a frame portion NDA. The frame portion NDA is provided along the second direction D2 near each of the two end portions D2EL and D2ER of the substrate 12 formed along the second direction D2 rather than the second region R2. In the present embodiment, the case where the display device 1a includes the frame portion NDA is described as an example, but the present invention is not limited thereto, and in the display device 1a, the frame portion NDA may not be provided, and the second region R2 may be provided instead of the frame portion NDA.

[0153] According to the display device 1a, since the frame portion NDA exists only on the short side of the display device 1a, the area of the frame portion NDA can be reduced as compared with the case where the frame portion NDA is provided on the long side of the display device 1a, so that a larger-size display region DA can be secured.

[0154] Also, in the display device 1a, when the frame portion NDA is not provided and the second region R2 is provided instead of the frame portion NDA, a larger-size display region DA can be secured.

[0155] As shown in FIG. 13(b), the display device 1b includes a substrate 12 having a length in a first direction D1 which is the longitudinal direction and a length in a second direction D2 orthogonal to the first direction D1, and includes a display area DA and a frame portion NDA. The frame portion NDA is provided along the first direction D1 near each of two end portions D1EU and D1ED of the substrate 12 formed along the first direction D1 and closer to the second region R2. In the present embodiment, the case where the display device 1b includes the frame portion NDA has been described as an example, but the present invention is not limited thereto. In the display device 1b, instead of providing the frame portion NDA, the second region R2 may be provided.

[0156] According to the display device 1b, by sandwiching the long sides of the display device 1b, even for a large display, the stress due to its own weight can be reduced.

[0157] Also, in the display device 1b, when the second region R2 is provided instead of the frame portion NDA without providing the frame portion NDA, a display area DA of a larger size can be secured.

[0158] As shown in FIG. 13(c), the display device 1c includes a substrate 12 having a length in a first direction D1 which is the longitudinal direction and a length in a second direction D2 orthogonal to the first direction D1, and includes a display area DA and a frame portion NDA. The frame portion NDA is provided at four corner portions where two end portions D1EU and D1ED of the substrate 12 formed along the first direction D1 and two end portions D2EL and D2ER of the substrate 12 formed along the second direction D2 are in contact with each other, and is provided closer to the corner portions than the second region R2. The present invention is not limited thereto. The frame portion NDA may be provided only at at least two corner portions whose mutual distance is the farthest among the four corner portions. Further, in the present embodiment, the case where the display device 1c includes the frame portion NDA has been described as an example, but the present invention is not limited thereto. In the display device 1c, instead of providing the frame portion NDA, the second region R2 may be provided only at the four corner portions or the two corner portions.

[0159] According to the display device 1c, since the frame portion NDA is provided only at the four corners or the two corners, the area of the frame portion NDA can be reduced, so that a display area DA of a larger size can be secured.

[0160] Also, in the display device 1c, when the second region R2 is provided only at the four corners or the two corners without providing the frame portion NDA, a display area DA of an even larger size can be secured.

[0161] As shown in FIG. 13(d), the display device 1d has a length in the first direction D1 which is the longitudinal direction and a length in the second direction D2 which is orthogonal to the first direction D1, and includes a substrate 12 having a display area DA and a frame portion NDA. In the present embodiment, an example will be described in which the frame portion NDA is provided at the end portions D1ED and D2EL of the substrate 12 where the second region R2 is provided and is provided closer to the end portions D1ED and D2EL of the substrate 12 than the second region R2, but the present invention is not limited thereto. For example, the frame portion NDA may be formed to include a portion formed along the first direction D1 near one of the two end portions D1EU and D1ED of the substrate 12 formed along the first direction D1 and a portion formed along the second direction D2 near one of the two end portions D2EL and D2ER of the substrate 12 formed along the second direction D2.

[0162] Also, in the present embodiment, an example has been described in which the display device 1d includes the frame portion NDA, but the present invention is not limited thereto, and the display device 1d may not include the frame portion NDA. Thus, when the display device 1d does not include the frame portion NDA, the second region R2 may be formed to include a portion formed along the first direction D1 near one of the two end portions D1EU and D1ED of the substrate 12 formed along the first direction D1 and a portion formed along the second direction D2 near one of the two end portions D2EL and D2ER of the substrate 12 formed along the second direction D2.

[0163] According to the display device 1d, since the frame portion NDA is provided on two sides including one corner, the area of the frame portion NDA can be reduced, so that a display area DA with a larger size can be secured.

[0164] Also, in the display device 1d, when the second region R2 is provided on two sides including one corner without providing the frame portion NDA, a display area DA with an even larger size can be secured.

[0165] Further, in the display device of the present embodiment, regardless of the arrangement position of the second region R2, the frame portion NDA includes (1) two end portions D2EL and D2ER of the substrate 12 formed along the second direction D2 and is a first frame region along the second direction D2, (2) two end portions D1EU and D1ED of the substrate 12 formed along the first direction D1 and is a second frame region along the first direction D1, (3) among the four corners where two end portions D1EU and D1ED of the substrate 12 formed along the first direction D1 and two end portions D2EL and D2ER of the substrate 12 formed along the second direction D2 are in contact, at least a third frame region that is two corners with the largest distance from each other, and (4) a fourth frame region including one of two end portions D1EU and D1ED of the substrate 12 formed along the first direction D1 and a portion formed along the first direction D1, and one of two end portions D2EL and D2ER of the substrate 12 formed along the second direction D2 and a portion formed along the second direction D2, and may be provided in any one of the frame regions.

[0166] 〔Embodiment 3〕 Next, based on FIG. 14, Embodiment 3 of the present disclosure will be described. In the display device 1e of this embodiment, the first light-emitting element provided in the first region R1 is included in the first sub-pixel, and the second light-emitting element provided in the second region R2 is included in the second sub-pixel. The light-emitting layer, which is a nanoparticle layer containing the nanoparticles of the first sub-pixel, and the light-emitting layer, which is a nanoparticle layer containing the nanoparticles of the second sub-pixel, each include an inner region SPCR·SPCR' and an outer region SPER·SPER'. The inner region SPCR·SPCR' has a higher concentration of halogen atoms than the outer region SPER·SPER'. The first sub-pixel is different from the display devices described in Embodiments 1 and 2 in that the ratio of the area of the inner region SPCR·SPCR' to the area of the sub-pixel is higher than that of the second sub-pixel. Other aspects are the same as those described in Embodiments 1 and 2. For the sake of convenience of explanation, members having the same functions as the members shown in the drawings of Embodiments 1 and 2 are denoted by the same reference numerals, and the description thereof is omitted.

[0167] FIG. 14 is a plan view showing an example of the display device 1e of Embodiment 3.

[0168] As shown in FIG. 14, in the display device 1e, the first light-emitting element provided in the first region R1 is included in the first sub-pixel, and the second light-emitting element provided in the second region R2 is included in the second sub-pixel. The light-emitting layer, which is a nanoparticle layer containing the nanoparticles of the first sub-pixel, and the light-emitting layer, which is a nanoparticle layer containing the nanoparticles of the second sub-pixel, each include an inner region SPCR·SPCR' and an outer region SPER·SPER'. The inner region SPCR·SPCR' has a higher concentration of halogen atoms than the outer region SPER·SPER'. The first sub-pixel has a higher ratio of the area of the inner region SPCR·SPCR' to the area of the sub-pixel than the second sub-pixel. By making the concentration of halogen atoms in the outer region SPER·SPER' lower than that in the inner region SPCR·SPCR', the luminous efficiency of the outer region SPER·SPER' is reduced compared to the inner region SPCR·SPCR', but the light emission of the outer region SPER·SPER' due to the leakage current from the adjacent sub-pixels can be suppressed.

[0169] Therefore, in the display device 1e, the concentration of halogen atoms contained in the nanoparticle layer provided in one or more light-emitting elements (first light-emitting elements) among the red light-emitting element, green light-emitting element, and blue light-emitting element provided in the first region R1 is higher than the concentration of halogen atoms contained in the nanoparticle layer provided in one or more light-emitting elements (second light-emitting elements) among the red light-emitting element, green light-emitting element, and blue light-emitting element provided in the second region R2.

[0170] Also, in the display device 1e, two or more second sub-pixels including the second light-emitting element are provided in the second region R2, and the concentration of halogen atoms contained in the nanoparticle layer of the second sub-pixel arranged closer to the first region R1 among the two or more second sub-pixels may be made higher than the concentration of halogen atoms contained in the nanoparticle layer of the second sub-pixel arranged farther from the first region R1 among the two or more second sub-pixels.

[0171] 〔Embodiment 4〕 Next, based on FIG. 15, Embodiment 4 of the present disclosure will be described. In the display device 1f of the present embodiment, the first light-emitting element provided in the first region R1 is included in the first sub-pixel, the second light-emitting element provided in the second region R2 is included in the second sub-pixel, the light-emitting layer which is the nanoparticle layer containing the nanoparticles of the first sub-pixel and the light-emitting layer which is the nanoparticle layer containing the nanoparticles of the second sub-pixel each include an inner region SPCR·SPCR' and an outer region SPER·SPER', and the outer region SPER·SPER' has a higher concentration of halogen atoms than the inner region SPCR·SPCR'. The first sub-pixel is different from the display devices described in Embodiments 1 to 3 in that the ratio of the area of the outer region SPER·SPER' in the area of the sub-pixel is higher than that of the second sub-pixel. Otherwise, it is the same as described in Embodiments 1 to 3. For the sake of convenience of explanation, members having the same functions as the members shown in the drawings of Embodiments 1 to 3 are denoted by the same reference numerals, and the description thereof is omitted.

[0172] FIG. 15 is a plan view showing an example of the display device 1f of Embodiment 4.

[0173] As shown in Fig. 15, in the display device 1f, the first light-emitting element provided in the first region R1 is included in the first sub-pixel, the second light-emitting element provided in the second region R2 is included in the second sub-pixel, and the light-emitting layer which is a nanoparticle layer containing the nanoparticles of the first sub-pixel and the light-emitting layer which is a nanoparticle layer containing the nanoparticles of the second sub-pixel each include an inner region SPCR·SPCR' and an outer region SPER·SPER'. The outer region SPER·SPER' has a higher concentration of halogen atoms than the inner region SPCR·SPCR'. The first sub-pixel has a higher ratio of the area of the outer region SPER·SPER' to the area of the sub-pixel than the second sub-pixel. By increasing the concentration of halogen atoms in the outer region SPER·SPER' compared to the inner region SPCR·SPCR', the light-emitting layer in the peripheral part of the sub-pixel can be protected against impurities such as water and oxygen.

[0174] Therefore, in the display device 1f, the concentration of halogen atoms contained in the nanoparticle layer provided in one or more light-emitting elements (first light-emitting elements) among the red light-emitting element, green light-emitting element, and blue light-emitting element provided in the first region R1 is higher than the concentration of halogen atoms contained in the nanoparticle layer provided in one or more light-emitting elements (second light-emitting elements) among the red light-emitting element, green light-emitting element, and blue light-emitting element provided in the second region R2.

[0175] Also, in the display device 1f, two or more second sub-pixels each including a second light-emitting element are provided in the second region R2, and the concentration of halogen atoms contained in the nanoparticle layer of the second sub-pixel disposed closer to the first region R1 among the two or more second sub-pixels may be made higher than the concentration of halogen atoms contained in the nanoparticle layer of the second sub-pixel disposed farther from the first region R1 among the two or more second sub-pixels.

[0176] 〔Embodiment 5〕 Next, based on FIG. 16, Embodiment 5 of the present disclosure will be described. In the manufacturing method of the display device of this embodiment, it is different from Embodiments 1 to 4 in that various display devices can be obtained by changing the cutting position for the same mother substrate. Other aspects are the same as those described in Embodiments 1 to 4. For the sake of convenience of explanation, members having the same functions as the members shown in the drawings of Embodiments 1 to 4 are denoted by the same reference numerals, and the description thereof is omitted.

[0177] (a) to (c) of FIG. 16 are diagrams for explaining a method of manufacturing a display device according to Embodiment 5 in which various display devices can be obtained by changing the cutting position indicated by a dotted line in the figure for the same mother substrate 10.

[0178] As shown in FIG. 16(a), by cutting the mother substrate 10 on which the above-described first region R1 and second region R2 are formed into six at the cutting positions indicated by dotted lines in the figure, six display devices including the first region R1 and the second region R2 can be obtained.

[0179] As shown in FIG. 16(b), by cutting the mother substrate 10 on which the above-described first region R1 and second region R2 are formed into eight at the cutting positions indicated by dotted lines in the figure, eight display devices including the first region R1 and the second region R2 can be obtained.

[0180] As shown in FIG. 16(c), by cutting the mother substrate 10 on which the above-described first region R1 and second region R2 are formed into five at the cutting positions indicated by dotted lines in the figure, five display devices including the first region R1 and the second region R2 can be obtained.

[0181] 〔Embodiment 6〕 Next, based on FIG. 17, Embodiment 6 of the present disclosure will be described. This embodiment is different from the display devices described in Embodiments 1 to 5 in that it is a light-emitting device 53. Otherwise, it is the same as described in Embodiments 1 to 5. For the sake of convenience of explanation, members having the same functions as the members shown in the drawings of Embodiments 1 to 5 are denoted by the same reference numerals, and the description thereof is omitted.

[0182] FIG. 17(a) is a plan view showing a schematic configuration of a wavelength conversion layer 50 provided in the light-emitting device 53 of Embodiment 6, and FIG. 17(b) is a cross-sectional view showing a schematic configuration of the light-emitting device 53 of Embodiment 6.

[0183] As shown in FIG. 17(a), the wavelength conversion layer 50 includes a first region R1 including at least a part of the central portion of the wavelength conversion region and a second region R2 including at least a part of the end portion of the wavelength conversion region. The concentration of halogen atoms contained in the light-emitting layer containing quantum dots in the first region R1 is higher than the concentration of halogen atoms contained in the light-emitting layer containing quantum dots in the second region R2.

[0184] As shown in FIG. 17(b), the light-emitting device 53 includes a light-emitting unit 51 that emits light incident on the wavelength conversion layer 50 provided on the first surface S1 side of the wavelength conversion layer 50, and a second surface S2 side of the wavelength conversion layer 50 that faces the first surface S1 of the wavelength conversion layer 50 and is provided with an output light amount changing unit 52 that changes the amount of transmitted light of the light emitted from the wavelength conversion layer 50.

[0185] In this embodiment, the case where the output light amount changing unit 52 that changes the amount of transmitted light of the light emitted from the wavelength conversion layer 50 is provided is described as an example, but the present invention is not limited thereto, and the output light amount changing unit 52 may not be provided.

[0186] According to the light-emitting device 53, it is possible to achieve both suppression of breakage at a location where mechanical stress occurs and luminous efficiency.

[0187] [Embodiment 7] Next, based on FIG. 18, Embodiment 7 of the present disclosure will be described. This embodiment is different from the display devices described in Embodiments 1 to 6 in that it is a lighting device 61. Other aspects are the same as those described in Embodiments 1 to 6. For the sake of convenience of explanation, members having the same functions as those shown in the drawings of Embodiments 1 to 6 are denoted by the same reference numerals, and the description thereof is omitted.

[0188] FIG. 18(a) is a plan view showing a schematic configuration of a light-emitting region 60 provided in the lighting device 61 of Embodiment 7, and FIG. 18(b) is a cross-sectional view showing a schematic configuration of the lighting device 61 of Embodiment 7.

[0189] As shown in FIGS. 18(a) and 18(b), the lighting device 61 has a light-emitting surface having a size of 100 cm 2 or more, and includes a light-emitting region 60 including a first region R1 including at least a part of the central portion of the light-emitting region 60 and a second region R2 including at least a part of the end portion of the light-emitting region 60. The light-emitting region 60 includes a first electrode 55 and a second electrode 57, and a light-emitting layer 56 including quantum dots provided between the first electrode 55 and the second electrode 57. The concentration of halogen atoms contained in the first region R1 is higher than the concentration of halogen atoms contained in the second region R2.

[0190] According to the lighting device 61, it is possible to achieve both suppression of breakage at a location where mechanical stress occurs and luminous efficiency.

[0191] 〔Supplementary Notes〕 The present disclosure is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of the present disclosure. Furthermore, by combining the technical means disclosed in each embodiment, new technical features can be formed.

Industrial Applicability

[0192] The present disclosure can be used for display devices, light-emitting devices, and lighting devices.

Description of Symbols

[0193] 1, 1a, 1b, 1c, 1d, 1e, 1f represent devices 3 barrier layers 4 thin film transistor layers 5R red light emitting element (first light emitting element) 5R’ red light emitting element (second light emitting element) 5G green light emitting element 5B blue light emitting element 10 mother substrate 12 substrate 22 first electrode 24R functional layer including red light emitting layer 24G functional layer including green light emitting layer 24B functional layer including blue light emitting layer 24HT hole transport layer 24REM red light emitting layer 24REM’ red light emitting layer 24GEM’ green light emitting layer 24BEM’ blue light emitting layer 24ET electron transport layer 24ETP protrusion of electron transport layer 25 second electrode 40A, 40B, 40C, 40D photosensitive resin layers 45 image signal conversion section 50 wavelength conversion layer 51 light emitting section 52 emitted light amount changing section 53 light emitting device 55 first electrode 56 light emitting layer containing quantum dots 57 second electrode 60 light emitting region 61 lighting device R1 first region R2 second region PIX pixel RSP red sub-pixel GSP green sub-pixel BSP blue sub-pixel DA display region DAEU, DAER, DAED, DAEL represent the ends of the area NDA frame edge QD quantum dot (nanoparticle) QDA quantum dot aggregate (nanoparticle aggregate) QDAP protrusion of quantum dot aggregate (protrusion of nanoparticle aggregate) HLIG halogen ligand HLIGR halogen ligand formation region OLIG organic ligand L1, L3 central position (reference position) of the thickness of the maximum film thickness portion of the red light emitting layer L2, L4 central position (reference position) of the thickness of the maximum film thickness portion of the electron transport layer TR, Tr1, Tr2 transistor C1 capacitor S1 first surface S2 second surface ES light emitting surface M1~M4 mask PL1~PLn+1 power supply voltage wiring SCL1~SCLn+1 scanning signal line SL1~SLn data signal line SPDR sub-pixel circuit D1 first direction D2 second direction D1EU, D1ED ends of the substrate formed along the first direction D2EL, D2ER ends of the substrate formed along the second direction SPCR inner region of the sub-pixel in the first region SPCR’ inner region of the sub-pixel in the second region SPER outer region of the sub-pixel in the first region SPER’ outer region of the sub-pixel in the second region

Claims

1. A display area including a first area including at least a part of the central portion of the display area and a second area including at least a part of the end portion of the display area, a first light-emitting element provided in the first area, a second light-emitting element provided in the second area, and the first light-emitting element and the second light-emitting element each include a first electrode and a second electrode, and a nanoparticle layer including nanoparticles positioned between the first electrode and the second electrode, wherein the concentration of halogen atoms included in a first layer which is the nanoparticle layer of the first light-emitting element is greater than the concentration of halogen atoms included in a second layer which is the nanoparticle layer of the second light-emitting element. A display device.

2. A display area including a first area including at least a part of the central portion of the display area and a second area including at least a part of the end portion of the display area, a first light-emitting element provided in the first area, a second light-emitting element provided in the second area, and the first light-emitting element and the second light-emitting element each include a first electrode and a second electrode, and a nanoparticle layer including nanoparticles positioned between the first electrode and the second electrode, Taking the central position of the thickness of the maximum film thickness portion in each of a first layer which is the nanoparticle layer of the first light-emitting element and a second layer which is the nanoparticle layer of the second light-emitting element as a reference position, the number of portions where a third layer formed directly above the first layer enters the first layer below the reference position is defined as a first number, and the number of portions where a fourth layer formed directly above the second layer enters the second layer below the reference position is defined as a second number. A display device, wherein the first number per unit length of the first layer is greater than the second number per unit length of the second layer.

3. A display area including a first area including at least a part of the central portion of the display area and a second area including at least a part of the end portion of the display area, a first light-emitting element provided in the first area, a second light-emitting element provided in the second area, and the first light-emitting element and the second light-emitting element each include a first electrode and a second electrode, and a nanoparticle layer including nanoparticles positioned between the first electrode and the second electrode, Taking the central position of the thickness of the maximum film thickness portion in each of the third layer formed directly above the first layer which is the nanoparticle layer of the first light-emitting element and the fourth layer formed directly above the second layer which is the nanoparticle layer of the second light-emitting element as the reference position, the number of portions where the first layer enters the third layer above the reference position is defined as the first number, and the number of portions where the second layer enters the fourth layer above the reference position is defined as the second number. The display device wherein the first number per unit length of the first layer is greater than the second number per unit length of the second layer.

4. The display device according to any one of claims 1 to 3, wherein the first layer and the second layer are a light-emitting layer containing quantum dots or a charge transport layer.

5. The first layer and the second layer are a light-emitting layer containing the quantum dots, The display device according to claim 4, wherein the third layer formed directly above the first layer and the fourth layer formed directly above the second layer are the charge transport layers.

6. The display device according to claim 4, wherein the charge transport layer is any one of a hole transport layer, an electron transport layer, a hole injection layer, and an electron injection layer.

7. The first layer and the second layer are hole transport layers, The display device according to claim 4, wherein the third layer formed directly above the first layer and the fourth layer formed directly above the second layer are any one of a light-emitting layer, a hole injection layer, the first electrode, and the second electrode.

8. The first layer and the second layer are electron transport layers, The display device according to claim 4, wherein the third layer formed directly above the first layer and the fourth layer formed directly above the second layer are any one of a light-emitting layer, an electron injection layer, the first electrode, and the second electrode.

9. The first layer and the second layer are hole injection layers, The display device according to claim 4, wherein the third layer formed directly above the first layer and the fourth layer formed directly above the second layer are one of the first electrode and the second electrode.

10. The first layer and the second layer are electron injection layers, The display device according to claim 4, wherein the third layer formed directly above the first layer and the fourth layer formed directly above the second layer are one of the first electrode and the second electrode.

11. The display device according to any one of claims 1 to 3, wherein the concentration of the nanoparticle aggregates contained in the first layer is greater than the concentration of the nanoparticle aggregates contained in the second layer.

12. The display device according to any one of claims 1 to 3, wherein the first light-emitting element and the second light-emitting element are light-emitting elements that emit the same color.

13. A substrate having a length in a first direction which is a longitudinal direction and a length in a second direction orthogonal to the first direction, and provided with the display area, The second region is provided in at least one of a third region formed with a width greater than 0% and equal to or less than 9% of the length of the substrate in the first direction from each of two end portions of the substrate formed along the second direction, and a fourth region formed with a width greater than 0% and equal to or less than 9% of the length of the substrate in the second direction from each of two end portions of the substrate formed along the first direction. The display device according to any one of claims 1 to 3.

14. A substrate having a length in a first direction which is a longitudinal direction and a length in a second direction orthogonal to the first direction, and provided with the display area, The second region is provided in at least one of a third region formed with a width greater than 9% and equal to or less than 21% of the length of the substrate in the first direction from each of two end portions of the substrate formed along the second direction, and a fourth region formed with a width greater than 9% and equal to or less than 21% of the length of the substrate in the second direction from each of two end portions of the substrate formed along the first direction. The display device according to any one of claims 1 to 3.

15. A substrate having a length in a first direction which is a longitudinal direction and a length in a second direction orthogonal to the first direction, and provided with the display area, The second region is provided in at least one of a third region formed with a width greater than 0% and equal to or less than 3% of the length of the substrate in the first direction from each of two end portions of the substrate formed along the second direction, and a fourth region formed with a width greater than 0% and equal to or less than 3% of the length of the substrate in the second direction from each of two end portions of the substrate formed along the first direction. The display device according to any one of claims 1 to 3.

16. A substrate having a length in a first direction which is a longitudinal direction and a length in a second direction orthogonal to the first direction, and provided with the display area, The second region is provided in at least one of a third region formed with a width greater than 3% and not greater than 15% of the length of the substrate in the first direction from each of two end portions of the substrate formed along the second direction, and a fourth region formed with a width greater than 3% and not greater than 15% of the length of the substrate in the second direction from each of two end portions of the substrate formed along the first direction. The display device according to any one of claims 1 to 3.

17. A substrate having a length in a first direction which is a longitudinal direction and a length in a second direction orthogonal to the first direction, and provided with the display region. The second region is provided in at least one of a third region formed with a width of not less than 3% and not greater than 15% of the length of the substrate in the first direction from each of two end portions of the substrate formed along the second direction, and a fourth region formed with a width of not less than 3% and not greater than 15% of the length of the substrate in the second direction from each of two end portions of the substrate formed along the first direction. The display device according to any one of claims 1 to 3.

18. The second region surrounds the first region in a frame shape. The display device according to any one of claims 1 to 3.

19. A substrate having a length in a first direction which is a longitudinal direction and a length in a second direction orthogonal to the first direction, and provided with the display region. The second region is provided along the second direction near each of two end portions of the substrate formed along the second direction, closer to the second direction than the first region. The display device according to any one of claims 1 to 3.

20. A substrate having a length in a first direction which is a longitudinal direction and a length in a second direction orthogonal to the first direction, and provided with the display region. The substrate includes a frame portion. The frame portion includes a first frame region along the second direction including two end portions of the substrate formed along the second direction, a second frame region along the first direction including two end portions of the substrate formed along the first direction, and a third frame region which is at least two of the four corners where two end portions of the substrate formed along the first direction and two end portions of the substrate formed along the second direction are in contact, and which are the two corners with the greatest distance from each other. The display device according to any one of claims 1 to 3, provided in any one of the frame regions including one of the two ends of the substrate formed along the first direction and the portion formed along the first direction, and one of the two ends of the substrate formed along the second direction and the portion formed along the second direction.

21. The substrate includes a frame portion. The display device according to claim 19, wherein the frame portion is provided along the second direction near each of the two ends of the substrate formed along the second direction, closer to the second region.

22. A substrate having a length in a first direction which is a longitudinal direction and a length in a second direction orthogonal to the first direction, and including the display region. The display device according to any one of claims 1 to 3, wherein the second region is provided along the first direction near each of the two ends of the substrate formed along the first direction, closer to the first region.

23. The substrate includes a frame portion. The display device according to claim 22, wherein the frame portion is provided along the first direction near each of the two ends of the substrate formed along the first direction, closer to the second region.

24. A substrate having a length in a first direction which is a longitudinal direction and a length in a second direction orthogonal to the first direction, and including the display region. The display device according to any one of claims 1 to 3, wherein the second region is provided at at least two of the four corners where the two ends of the substrate formed along the first direction and the two ends of the substrate formed along the second direction are in contact with each other, and the distance between the two corners is the farthest.

25. The substrate includes a frame portion. The display device according to claim 24, wherein the frame portion is provided at the corner where the second region is provided and is provided closer to the corner than the second region.

26. A substrate having a length in a first direction which is a longitudinal direction and a length in a second direction orthogonal to the first direction, and including the display region. The second region includes a portion formed along the first direction near one of the two ends of the substrate formed along the first direction, and a portion formed along the second direction near one of the two ends of the substrate formed along the second direction. The display device according to any one of claims 1 to 3.

27. The substrate includes a frame portion. The frame portion is provided at the end where the second region is provided, and is provided closer to the end than the second region. The display device according to claim 26.

28. The first light-emitting element is included in the first sub-pixel. The second light-emitting element is included in the second sub-pixel. The first layer of the first sub-pixel and the second layer of the second sub-pixel each include an inner region and an outer region. The inner region has a higher concentration of halogen atoms than the outer region. The first sub-pixel has a higher ratio of the area of the inner region to the area of the sub-pixel than the second sub-pixel. The display device according to any one of claims 1 to 3.

29. The first light-emitting element is included in the first sub-pixel. The second light-emitting element is included in the second sub-pixel. The first layer of the first sub-pixel and the second layer of the second sub-pixel each include an inner region and an outer region. The outer region has a higher concentration of halogen atoms than the inner region. The first sub-pixel has a higher ratio of the area of the outer region to the area of the sub-pixel than the second sub-pixel. The display device according to any one of claims 1 to 3.

30. The first light-emitting element is included in the first sub-pixel. The second light-emitting element is included in the second sub-pixel. The second region is provided with a plurality of second sub-pixels each including the second light-emitting element. And The concentration of halogen atoms included in the second layer of the second sub-pixel disposed closer to the first region among the plurality of second sub-pixels is greater than the concentration of halogen atoms included in the second layer of the second sub-pixel disposed farther from the first region among the plurality of second sub-pixels. The display device according to any one of claims 1 to 3.

31. The coverage rate of the nanoparticles in the first region by halogen atoms is 67% or more and 80% or less. The display device according to any one of claims 1 to 3, wherein the coverage rate of the nanoparticles in the second region by halogen atoms is 0% or more and less than 67%.

32. The display device according to any one of claims 1 to 3, wherein the halogen atom contained in at least the first layer is fluorine.

33. The display device according to any one of claims 1 to 3, wherein in each of the first light-emitting element and the second light-emitting element, the drive current corresponding to the same luminance is smaller in the first light-emitting element than in the second light-emitting element.

34. Comprising an image signal conversion unit, The image signal conversion unit stores a first coefficient (A = L1 / J1) indicating the relationship between a predetermined current density J1 in the first light-emitting element and the luminance L1 corresponding to the predetermined current density J1, and a predetermined current density J2 in the second light-emitting element and the luminance L2 corresponding to the predetermined current density J2. A second coefficient (B = L2 / J2) indicating the relationship is stored, The image signal conversion unit converts a first data signal regarding the drive current of the first light-emitting element based on the first coefficient and supplies it to the first light-emitting element, and converts a second data signal regarding the drive current of the second light-emitting element based on the second coefficient and supplies it to the second light-emitting element. The display device according to claim 33.

35. A wavelength conversion layer including a first region including at least a part of the central portion of the wavelength conversion region and a second region including at least a part of the end portion of the wavelength conversion region, And a light-emitting portion that emits light incident on the wavelength conversion layer provided on the first surface side of the wavelength conversion layer, A light-emitting device, wherein the concentration of halogen atoms contained in the light-emitting layer containing quantum dots in the first region is higher than the concentration of halogen atoms contained in the light-emitting layer containing quantum dots in the second region.

36. Comprising an output light amount changing unit that changes the amount of transmitted light of the light emitted from the wavelength conversion layer, The light-emitting device according to claim 35, wherein the output light amount changing unit is provided on the second surface side of the wavelength conversion layer facing the first surface of the wavelength conversion layer.

37. 100 cm ２ It has a light-emitting surface of the above size, and includes a light-emitting region including a first region containing at least a part of the central portion of the light-emitting region and a second region containing at least a part of the end portion of the light-emitting region. The light-emitting region includes a first electrode and a second electrode, and a light-emitting layer containing quantum dots provided between the first electrode and the second electrode. An illumination device, wherein the concentration of halogen atoms contained in the first region is higher than the concentration of halogen atoms contained in the second region.

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