Substrate processing apparatus

Abstract

To prevent a generation of a shock.SOLUTION: A substrate treatment apparatus has a treatment chamber 4m, a back chamber 4n, a mask 20 and a rotation support mechanism 10. The rotation support mechanism 10 has a rotation shaft 12 and a substrate holding part 13. In a rotation direction of the substrate holding part 13 toward a film deposition standing position from a horizontal transfer position, a gravity center of the substrate holding part 13 in the film deposition standing position does not exceed a position just above the rotation shaft 12 in a vertical position.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus. In particular, the present invention relates to a substrate processing apparatus used for processing a substrate to be processed in a vertical type (film formation standing position), such as film formation processes such as vapor deposition, sputtering, and CVD, and heat treatment of the substrate.

Background Art

[0002] In the fields of semiconductor devices and flat panel displays (FPDs), sputtering and vapor deposition are used as methods for forming various thin films on a substrate (object to be processed). In a sputtering apparatus, a mask and a substrate are arranged in a chamber maintained at a reduced pressure atmosphere so as to face a target attached to a cathode, and film formation is performed on the substrate. In a vapor deposition apparatus, a mask is arranged between a vapor deposition source and a substrate in a chamber maintained at a reduced pressure atmosphere, and film formation is performed on the substrate.

[0003] Conventionally, as disclosed in Patent Document 1, a rotation support mechanism that rotates while supporting a substrate between a horizontal transfer position and a film formation standing position is known. The rotation support mechanism has a substrate holding part that holds the substrate and a rotation shaft that rotates the substrate holding part. In a substrate processing apparatus provided with such a rotation support mechanism, the substrate holding part supports the substrate horizontally transferred inside the chamber, the rotation shaft rotates the substrate holding part, and the substrate holding part becomes vertical. As a result, the substrate is in a state of being substantially vertically erected. During film formation, vertical film formation is performed on the substrate with the substrate held vertically together with the substrate holding part.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In the rotation operation of standing the substrate substantially vertically by changing the position of the substrate from the horizontal transfer position to the film formation standing position, the center of gravity of the substrate supported by the substrate holding portion and the center of gravity of the substrate holding portion move. Along with this movement of the center of gravity, the position of the substrate and the relative positions between the components (hereinafter referred to as component parts) constituting the rotation support mechanism may vary. In recent years, with the increase in the size of the substrate, the weight of the rotation support mechanism for rotating the substrate has increased, and the variation in the positions of the component parts due to the above-described movement of the center of gravity has become impossible to ignore.

[0006] In particular, when the positions of the component parts vary with the driving of the rotation support mechanism, an impact occurs between the component parts, and there is a risk that particles may be generated due to the occurrence of this impact. Furthermore, because the substrate has become larger, when the positions of the component parts vary with the driving of the rotation support mechanism, the amount of variation becomes larger at positions away from the rotation axis. For this reason, there has been a problem that the alignment accuracy of the substrate decreases, the distance between the film formation source and the substrate changes, and the thickness of the film formed on the substrate does not become the desired thickness. Also, when the alignment accuracy decreases due to the variation in the positions of the component parts caused by the rotational driving, there has been a problem that the component parts come into contact with each other and the necessary electric potential cannot be maintained. For this reason, there has been a risk that the film formation conditions cannot be maintained in a required state.

[0007] As described above, due to the operation of rotating the substrate between the horizontal transfer position and the film formation standing position, displacement and impact occur between the component parts, and thus there has been a problem that the yield in FPD manufacturing may decrease.

[0008] The present invention has been made in view of the above circumstances, and achieves the following objectives. 1. Suppress the occurrence of impact in the component parts constituting the rotation support mechanism in the rotation operation of standing the substrate substantially vertically by changing the position of the substrate from the horizontal transfer position to the film formation standing position. 2. Suppress variation in the film formation conditions due to the rotation of the substrate. 3. Suppress the generation of particles. 4. Improve workability.

Means for Solving the Problem

[0009] As a result of earnestly studying the cause of displacement and impact between components during rotational driving by the rotation support mechanism, the inventor of the present invention focused on the fact that displacement and impact between such components may occur due to the movement of the center of gravity of the rotation support mechanism. Specifically, when the substrate holding part is in the horizontal transfer position, the center of gravity of the substrate holding part is located on a line extending in a substantially horizontal direction as viewed from the rotation axis. When the rotation of the rotation axis starts, the substrate holding part supporting the substrate begins to rotate so as to rise from the horizontal transfer position and gradually approaches the film forming standing position. The position of the center of gravity of the substrate holding part also moves as the rotation axis rotates. Before the substrate holding part reaches the film forming standing position, the position of the center of gravity of the substrate holding part supporting the substrate passes through a position on a line extending vertically from the rotation axis (hereinafter referred to as the vertical direction line). In other words, as the rotation axis rotates, the position of the center of gravity of the substrate holding part supporting the substrate moves so as to straddle the vertical direction line. When the substrate holding part reaches the film forming standing position, the rotation of the substrate holding part stops. At this time, the position of the center of gravity of the substrate holding part in the film forming standing position is located on the opposite side of the center of gravity of the substrate holding part in the horizontal transfer position as viewed from the rotation axis.

[0010] In such driving of the rotation support mechanism, as the rotation axis rotates, the position of the center of gravity of the substrate holding part supporting the substrate moves horizontally across a line extending vertically from the rotation axis. Therefore, when the rotation support mechanism is viewed in the direction in which the rotation axis extends, the direction of the moment generated on the rotation axis changes from the clockwise direction to the counterclockwise direction as the center of gravity of the substrate holding part supporting the substrate moves. Or, when the rotation support mechanism is viewed in the direction opposite to the above-mentioned direction in which the rotation axis extends, the direction of the moment generated on the rotation axis changes from the counterclockwise direction to the clockwise direction as the center of gravity of the substrate holding part supporting the substrate moves.

[0011] The inventor has found that displacement and impact occur between components when the center of gravity of a substrate holding part that supports a substrate so as to straddle a line extending vertically from the rotation axis moves, in other words, when the direction of the moment generated on the rotation axis changes from one direction to the other direction.

[0012] In particular, as the size of the substrate increases, the distance between the position of the center of gravity of the substrate holding part that supports the large substrate and the rotation center of the rotation axis also increases. For this reason, in the rotational drive in which the rotation axis rotates the substrate holding part, the moment generated on the rotation axis also increases. This is considered to increase the amount of displacement and the magnitude of impact between the components. Further, in a vacuum atmosphere in which film formation processing or heat treatment is performed, thermal deformation occurs in the components of the rotation support mechanism. It is difficult to actually measure the displacement and gap generated between the components due to thermal deformation. Such displacement and gap generated between the components are considered to affect the increase in the amount of displacement and the magnitude of impact between the components.

[0013] Therefore, the inventor considered that if it is possible to obtain a structure that realizes the following points, it is possible to suppress displacement and impact between the components including the substrate holding part that constitutes the rotation support mechanism. · Suppressing fluctuations in the load generated on the substrate holding part. · Suppressing the occurrence of backlash in the drive gear that constitutes a speed reducer that applies a rotational force to the rotation axis. · Suppressing the occurrence of torsion of the rotation axis. · Suppressing deformation such as deflection in the substrate holding part. · Suppressing fluctuations in the clearance between the components of the rotation support mechanism. · Suppressing the occurrence of displacement between the components of the rotation support mechanism. · Suppressing the movement of the substrate holding part that straddles a line extending vertically from the rotation axis.

[0014] A substrate processing apparatus according to an aspect of the present invention performs surface treatment on the substrate Having a substrate processing unit A processing chamber, adjacent to the processing chamber and in the processing chamberSaid a back chamber that supports the substrate during surface treatment, and A film deposition chamber constituted by said a mask disposed in the back chamber and standing upright so as to face the processing chamber, And having a film deposition port a rotation support mechanism having a rotation shaft rotatable about a rotation center, and a substrate holding portion attached to the rotation shaft and capable of supporting the substrate in the back chamber, the substrate holding portion supporting the substrate being rotated between a horizontal transfer position and a film formation upright position. The back chamber has a transfer port through which the substrate passes in the transfer direction of the substrate. The internal space of the film deposition chamber has a front space and a back space. The front space is a space where the film deposition surface of the substrate is exposed through the film deposition port of the mask during the surface treatment. The back space is a space facing the back surface of the substrate during the surface treatment. The boundary position between the front space and the back space is arranged at a position closer to the transfer port in the transfer direction than the boundary position between the processing chamber and the back chamber. In the horizontal transfer position of the substrate, the substrate holding portion supports the substrate so as to face in the horizontal direction so that the substrate can be moved horizontally through the transfer port. In the film formation upright position of the substrate, the substrate holding portion supports the substrate so that the substrate faces the mask during surface treatment. In the rotation direction of the substrate holding portion from the horizontal transfer position toward the film formation upright position, the position of the center of gravity of the substrate holding portion in the film formation upright position does not exceed a position directly above the rotation shaft in the vertical direction. Said In other words, even when rotational driving is performed to rotate the substrate holding portion from the horizontal transfer position to the film formation upright position, the position of the center of gravity of the substrate holding portion in the horizontal direction in the film formation upright position does not cross a line extending vertically from the rotation shaft in the rotation direction. The rotation support mechanism includes a base portion provided integrally with the rotation shaft, a flange portion provided integrally with the substrate holding portion, and a fastening member that passes through the flange portion and is fastened to the base portion. The base portion has a first mounting plane that abuts against the flange portion. The flange portion has a second mounting plane that abuts against the base portion. The first mounting plane is a plane along the axial direction of the rotation shaft and the tangential direction with respect to the outer peripheral surface of the rotation shaft. With the first mounting plane and the second mounting plane in contact, the substrate holding portion is fastened to the rotation shaft by the fastening member that passes through the flange portion in a direction intersecting the second mounting plane.

[0015] Also, in the rotation direction, the position of the center of gravity of the substrate holding portion in the horizontal direction does not move so as to straddle a line extending vertically from the rotation shaft. In the rotational operation of the substrate holding portion, the movement range between the center of gravity of the substrate holding portion in the horizontal transfer position and the center of gravity of the substrate holding portion in the film formation upright position does not straddle a line extending vertically from the rotation shaft. Also, in the film formation upright position, the center of gravity of the substrate holding portion in the horizontal direction is located directly above the rotation shaft in the vertical direction, or reaches a position slightly in front of the position directly above the rotation shaft in the rotation direction. Here, the "position slightly in front" means an angle slightly less than the position of the line (90°) extending vertically from the rotation shaft.

[0016] ​According to the above configuration, in the rotational drive of the substrate holding part from the horizontal transfer position to the film forming standing position, the magnitude of the moment acting on the rotation axis due to the weight of the substrate holding part changes as the substrate holding part rotates. However, the position of the center of gravity of the substrate holding part in the horizontal direction does not move across the line extending vertically from the rotation axis and does not exceed the position directly above the rotation axis in the vertical direction. Therefore, even if the magnitude of the moment acting on the rotation axis changes, the direction of the moment acting on the rotation axis during the rotation between the horizontal transfer position and the film forming standing position does not reverse. That is, in the rotational drive of the substrate holding part from the horizontal transfer position to the film forming standing position, a moment acting in the opposite direction to the rotational direction from the horizontal transfer position to the film forming standing position is generated, but it is possible to prevent the generation of a moment in the forward direction with respect to the rotational direction.

[0017] As a result, even if the center of gravity of the substrate holding part moves due to the rotation of the rotation axis, displacement and impact between the components constituting the rotation support mechanism can be suppressed. Therefore, even when the substrate holding part is rotated while a large substrate having a side length exceeding 1800 mm is supported by the substrate holding part, the generation of excessive impact can be suppressed, and the following effects can be obtained. · It is possible to suppress fluctuations in the load generated in the substrate holding part. · It is possible to suppress the generation of backlash in the drive gear constituting the speed reducer that applies a rotational force to the rotation axis. · It is possible to suppress the generation of torsion of the rotation axis. · It is possible to suppress deformation such as deflection in the substrate holding part. · It is possible to suppress fluctuations in the clearance between the components constituting the rotation support mechanism. · It is possible to suppress the occurrence of displacement between the components constituting the rotation support mechanism. · It is possible to suppress the movement of the substrate holding part that straddles the line extending vertically from the rotation axis.

[0018] Therefore, it is possible to suppress the generation of particles caused by the impact in the rotation support mechanism, and to prevent cracks, chips, etc. of the substrate caused by the impact. Thereby, the processing characteristics in the processing of the substrate such as film formation can be improved.

[0019] Furthermore, at the film formation standing position in the rotation support mechanism, the center of gravity of the substrate holding portion is located directly above the rotation axis in the vertical direction, or reaches a position slightly in front of the position directly above the rotation axis in the rotation direction. For this reason, the distance variation between the substrate processing portion provided in the processing chamber and the substrate can be suppressed. Also, the variation in the distance between the substrate holding portion and the mask can be suppressed. Thereby, the contact between the substrate holding portion and the mask can be prevented. Also, when processing the substrate, a change in the electrical state such as the potential of the substrate can be prevented. Thereby, the processing characteristics in the processing of the substrate such as film formation can be improved.

[0021] According to the above configuration, at the fastening portion where the rotation axis and the substrate holding portion are fastened, a fastening friction surface is generated. The direction in which displacement such as slippage occurs on such a fastening friction surface, that is, the direction in which the rotation axis and the substrate holding portion shift relative to each other, can be set to the direction along the first mounting plane and the second mounting plane. For this reason, the direction in which the rotation axis and the substrate holding portion shift relative to each other can be limited without depending on the rotation position of the substrate holding portion in the rotation direction of the rotation axis. The possibility that the rotation axis and the substrate holding portion shift relative to each other can be reduced. Also, at the film formation standing position of the substrate holding portion where displacement occurs between the rotation axis and the substrate holding portion, the fastening portion is located at the lowermost position in the substrate holding portion. For this reason, the occurrence of displacement at the lowermost position of the substrate holding portion can be suppressed, and the displacement and impact between the components of the rotation support mechanism can be reduced. In particular, the displacement and impact between the rotation axis and the substrate holding portion can be reduced.

[0022] In the conventional fixed structure of the substrate holding part and the rotating shaft, a flange part formed on the rotating shaft on the radially outer side and a fastening surface formed on the substrate holding part and contacting the flange were fastened by a fastening member extending parallel to the rotating shaft. In this structure, on the fastening friction surface between the flange part and the fastening surface, the flange part and the fastening surface are displaced from each other in the circumferential direction of the rotating shaft. On the other hand, according to the above configuration, in the direction intersecting the second mounting plane, the fastening member penetrates the flange part, and the substrate holding part is fastened to the rotating shaft by the fastening member. Therefore, a structure in which displacement in the circumferential direction of the rotating shaft does not occur is obtained.

[0023] In the substrate processing apparatus according to one aspect of the present invention, a first engaging part is formed on the first mounting plane. A second engaging part is formed on the second mounting plane. In a state where the first mounting plane and the second mounting plane are in contact with each other, the first engaging part and the second engaging part may engage with each other.

[0024] According to the above configuration, it is possible to prevent the occurrence of displacement such as the first mounting plane and the second mounting plane sliding relative to each other. In particular, in the rotation support mechanism, it is possible to prevent the occurrence of displacement in the direction in which the substrate holding part falls according to gravity with respect to the rotating shaft. For this reason, the first engaging part and the second engaging part can be referred to as anti-sliding parts. By using such first engaging part and second engaging part, the workability at the time of attaching the substrate holding part to the rotating shaft can be improved, and the working time can be shortened. The anti-sliding part can be formed at the lower end positions of the first mounting plane and the second mounting plane in the horizontal transfer position.

[0025] In the substrate processing apparatus according to one aspect of the present invention, the rotation support mechanism may have a non-contact stopping part that stops the substrate holding part at the film forming standing position in the rotational drive for rotating the substrate holding part from the horizontal transfer position to the film forming standing position.

[0026] According to the above configuration, when the substrate holding part rotates from the horizontal transport position to the film formation standing position in accordance with the rotational drive of the rotating shaft, the non-contact stop part can stop the rotation of the substrate holding part so that the member such as the mask does not come into contact with the substrate holding part. This prevents the member such as the mask from coming into contact with the substrate holding part, thereby preventing the generation of particles due to impact on the substrate holding part. Therefore, it becomes possible to perform surface treatment on the substrate in an atmosphere where the generation of particles is prevented. Furthermore, the rotational drive of the rotating shaft can be easily controlled.

[0027] In the substrate processing apparatus according to one aspect of the present invention, the mask is disposed between the processing chamber and the back chamber. Said It may be disposed between a boundary position and the substrate in the film deposition standing position.

[0028] According to the above configuration, the rotating shaft can be arranged on the rotary support mechanism so that there is sufficient positional margin for attaching the rotating shaft to the chamber wall forming the rear chamber. Here, in the film formation standing position, the rotating shaft supports a position directly below the substrate holding part standing along the mask. In addition, in order to transmit the power output from the rotary drive source arranged outside the rear chamber to the substrate holding part, it is necessary for the rotating shaft to penetrate the chamber wall of the rear chamber. Furthermore, it is necessary to arrange a seal member or the like on the chamber wall around the rotating shaft. For this reason, it is necessary to have sufficient positional margin in the arrangement of the rotating shaft attached to the rear chamber so as to penetrate the chamber wall of the rear chamber. Here, examples of an arrangement of the rotating shaft that has positional leeway include an arrangement in which the position where the rotating shaft penetrates the chamber wall of the rear chamber is not too close to the boundary position between the processing chamber and the rear chamber, or an arrangement in which the position where the rotating shaft penetrates the chamber wall of the rear chamber is not too close to the bottom of the chamber wall of the rear chamber. This eliminates the problem that occurs when the mask approaches the boundary between the processing chamber and the rear chamber, i.e., there is no space to attach the rotating shaft to the chamber wall that forms the rear chamber.

[0029] In the substrate processing apparatus according to one aspect of the present invention, the substrate processing unit may protrude from the boundary position between the processing chamber and the back chamber toward the back chamber. Opposing the mask and Between the processing chamber and the back chamber Said It may protrude toward the back chamber from the boundary position.

[0030] Specifically, each of the processing chamber and the back chamber has a connection end. The position where the connection end of the processing chamber and the connection end of the back chamber are connected corresponds to the boundary position between the processing chamber and the back chamber. Here, in a state where the processing chamber and the back chamber are separated from each other, the connection end of the processing chamber is separated from the connection end of the back chamber. In such a separated state, the substrate processing unit protrudes from the connection end of the processing chamber. Therefore, when performing maintenance on the processing chamber and the back chamber, in a state where the processing chamber and the back chamber are separated from each other, a lifting mechanism such as a crane used for maintenance can be easily brought close to the position above the substrate processing unit. The substrate processing unit can be lifted by the lifting mechanism, and the substrate processing unit can be easily removed upward from the processing chamber, and the substrate processing unit can be moved outside the processing chamber. As a result, operations necessary for maintenance such as attachment and detachment of the substrate processing unit can be simplified and easily performed, and the working time can be shortened.

[0031] On the other hand, in a structure where the substrate processing unit is arranged inside the processing chamber without protruding from the connection end of the processing chamber, when removing the substrate processing unit, it is necessary to move the substrate processing unit horizontally from the opening at the boundary position between the processing chamber and the back chamber out of the processing chamber, and then move the substrate processing unit upward from the processing chamber. That is, in order to remove the substrate processing unit from the processing chamber, a two-step removal operation is required. On the contrary, according to the substrate processing apparatus according to one aspect of the present invention, the substrate processing unit can be easily removed upward from the processing chamber by a one-step removal operation.

[0032] Here, when the substrate processing unit has an evaporation source, it becomes easy to move the evaporation source. Also, when the substrate processing unit has a cathode unit, it becomes easy to move the backing plate or target that constitutes the cathode unit.

[0033] In the substrate processing apparatus according to one aspect of the present invention, the substrate processing unit has an evaporation source. The front space in With respect to the substrate Evaporation processing may be performed.

[0034] According to the above configuration, when forming a film on the substrate by evaporation, due to the rotational movement of the substrate holding portion in the rotational support mechanism, it is possible to prevent breakage of the substrate due to occurrence of cracks, chips, etc. in the processed substrate. At the same time, the distance between the mask and the substrate can be appropriately maintained to prevent deterioration of the film forming characteristics. At the same time, generation of particles can be suppressed, and deterioration of the film forming characteristics can be prevented.

[0035] In the substrate processing apparatus according to one aspect of the present invention, the substrate processing unit has a cathode electrode. The front space in With respect to the substrate Sputtering processing may be performed.

[0036] According to the above configuration, when forming a film on the substrate by sputtering, due to the rotational movement of the substrate holding portion in the rotational support mechanism, it is possible to prevent breakage of the substrate due to occurrence of cracks, chips, etc. in the processed substrate. At the same time, the distance between the mask and the substrate can be appropriately maintained to maintain the potential state required for sputtering and prevent deterioration of the film forming characteristics. At the same time, generation of particles can be suppressed, and deterioration of the film forming characteristics can be prevented.

Effects of the Invention

[0037] According to the substrate processing apparatus according to one aspect of the present invention, when rotating the substrate between the horizontal transfer position which is the transfer position and the film formation standing position which is the processing position, displacement and impact between the components constituting the rotation support mechanism can be suppressed. Further, it is possible to prevent the occurrence of cracks and chips in the substrate, suppress the generation of particles, appropriately maintain the distance between the substrate processing unit and the substrate and the mask, and prevent fluctuations in the surface treatment state of the substrate. It is possible to improve the processing characteristics in the processing of the substrate such as film formation.

Brief Description of the Drawings

[0038]

Figure 1

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DETAILED DESCRIPTION OF THE INVENTION

[0039] Hereinafter, a substrate processing apparatus according to a first embodiment of the present invention will be described with reference to the drawings. It should be noted that this embodiment is specifically described to better understand the gist of the invention, and does not limit the present invention unless otherwise specified.

[0040] In this embodiment, an XYZ orthogonal coordinate system is set to explain the positional relationship of each component. The direction parallel to the gravitational direction, that is, the vertical direction, is referred to as the Z direction. Among the Z directions, the direction coinciding with the gravitational direction is referred to as the downward direction (downward), and the direction opposite to the gravitational direction is referred to as the upward direction (upward). In the following description, "plan view" means looking at the object in the gravitational direction or the downward direction. The transport direction of the glass substrate is referred to as the horizontal direction or the X direction. The direction orthogonal to the Z direction and the X direction is referred to as the Y direction.

[0041] <SUBSTRATE PROCESSING APPARATUS> FIG. 1 is a schematic plan view showing a substrate processing apparatus according to the present embodiment. In FIG. 1, reference numeral 1 denotes a substrate processing apparatus. The substrate processing apparatus 1 is applied to an intermittent sputtering apparatus that performs heat treatment, film formation treatment, etching treatment, etc. on a substrate 11 made of glass or resin in a vacuum environment, or an evaporation apparatus used for manufacturing an organic EL. The substrate processing apparatus 1 is used, for example, in a manufacturing process of an FPD (Flat Panel Display). In this case, for example, a TFT (Thin Film Transistor) can be formed on the substrate 11. In the present embodiment, the case where the substrate processing apparatus 1 is a sputtering apparatus will be described. In other words, the surface treatment performed in the substrate processing apparatus 1 is a film formation treatment, that is, a sputtering treatment.

[0042] The substrate processing apparatus 1 includes film formation chambers 4, 4A and load / unload chambers 2, 2A. The plurality of chambers 2, 2A, 4, 4A are arranged so as to surround the transfer chamber (transfer chamber) 3. Each of the plurality of chambers 2, 2A, 4, 4A is, for example, two load / unload chambers (chambers) 2, 2A formed adjacent to each other, and two film formation chambers (chambers) 4, 4A. The substrate processing apparatus 1 also has a control device (not shown) that controls the substrate processing apparatus 1. The control device controls the operations in the film formation chambers 4, 4A and the load / unload chambers 2, 2A. As will be described later, the control device controls the rotation operation of the rotation support mechanism 10 in the film formation chambers 4, 4A.

[0043] <Load / Unload Chamber> For example, one load / unload chamber 2 functions as a load chamber for loading the glass substrate 11 from the outside to the inside of the substrate processing apparatus 1. The other load / unload chamber 2A functions as an unload chamber for unloading the glass substrate 11 from the inside to the outside of the substrate processing apparatus 1. Also, in the film formation chamber 4 and the film formation chamber 4A, the same film formation process may be performed, or different film formation processes may be performed. The glass substrate 11 is an example of a "substrate".

[0044] Between the load / unload chamber 2 and the transfer chamber 3, between the load / unload chamber 2A and the transfer chamber 3, between the film deposition chamber 4 and the transfer chamber 3, and between the film deposition chamber 4A and the transfer chamber 3, partition valves are respectively arranged.

[0045] In the load / unload chamber 2, a positioning member is arranged. On the positioning member, the glass substrate 11 carried in from the outside to the inside of the load / unload chamber 2 is placed. The positioning member sets the position of the glass substrate 11 and enables the alignment of the glass substrate 11. The load / unload chamber 2 is connected to a rough evacuation section (for rough evacuation) that evacuates the internal space of the load / unload chamber 2. The rough evacuation section is, for example, a rotary pump or the like.

[0046] <Transfer Chamber> As shown in FIG. 1, the transfer chamber 3 includes a transfer device 3a arranged inside the transfer chamber 3. The transfer device 3a is, for example, a transfer robot. The transfer device 3a has a rotating shaft, a drive source for rotationally driving the rotating shaft, a robot arm attached to the rotating shaft, a robot hand formed on a part of the robot arm, and a vertical movement mechanism. The robot arm includes a first movement rail and a second movement rail that cross each other, a first base movable with respect to the first movement rail for the second movement rail, and a second base movable with respect to the second movement rail for the robot hand. The transfer device 3a can move the glass substrate 11, which is the object to be transferred, between the chambers 2, 2A, 3, 4, 4A. Note that the robot arm may be composed of a first active arm, a second active arm, a first passive arm, and a second passive arm that can be bent with respect to each other.

[0047] <Film Deposition Chamber> The film deposition chambers 4 and 4A have the same configuration. Hereinafter, the film deposition chamber 4 will be described, and the description of the film deposition chamber 4A will be omitted. FIG. 2 is a schematic side view showing a part of the film deposition chamber 4 in the present embodiment. As shown in FIGS. 1 and 2, the film forming chamber 4 includes a power supply 4p, a gas atmosphere setting mechanism 4g, and a cathode unit 5. The power supply 4p, the gas atmosphere setting mechanism 4g, and the cathode unit 5 are used to perform a film forming process on the glass substrate 11. The power supply 4p, the gas atmosphere setting mechanism 4g, and the cathode unit 5 are an example of a "substrate processing unit". Note that the substrate processing unit may be referred to as a substrate processing mechanism or a film forming source. The film forming chamber 4 is composed of a plasma chamber 4m and a platen chamber 4n.

[0048] <Power supply, gas atmosphere setting mechanism> The power supply 4p is connected to a backing plate 6 of the cathode unit 5 described later. The power supply 4p applies a negative potential sputtering voltage to the backing plate 6. The gas atmosphere setting mechanism 4g is configured to set the gas atmosphere inside the film forming chamber 4. The gas atmosphere setting mechanism 4g has a gas introduction part for introducing a processing gas into the film forming chamber 4 and a high vacuum evacuation part for reducing the pressure (performing high vacuum pumping) of the internal space of the film forming chamber 4. The gas introduction part is connected to a gas supply source. The gas introduction part is, for example, a mass flow controller that adjusts the flow rate of the gas supplied from the gas supply source. The high vacuum evacuation part is, for example, a turbo molecular pump or the like.

[0049] <Cathode unit> The cathode unit 5 is erected inside the film forming chamber 4. The cathode unit 5 has a target 7 and a backing plate 6 for holding the target 7. The backing plate 6 functions as a cathode electrode. The backing plate 6 is erected at the position farthest from the transfer port 4a located between the transfer chamber 3 and the film forming chamber 4 inside the film forming chamber 4. On the front side of the backing plate 6, a target 7 that faces the glass substrate 11 substantially in parallel when processing the glass substrate 11 is fixed. The backing plate 6 is an electrode for applying a negative potential sputtering voltage to the target 7.

[0050] On the rear side of the backing plate 6, a magnetron magnetic circuit for forming a predetermined magnetic field on the target 7 is installed. The magnetron magnetic circuit is attached to the swing mechanism. The swing mechanism has a drive device for swinging the magnetron magnetic circuit. The drive device of the swing mechanism is configured to be able to swing the magnetron magnetic circuit.

[0051] <Modification Example of Cathode Unit> As a modification example of the cathode unit 5, a plurality of rotary cathodes may be applied to the film formation chamber 4. As the configuration of the plurality of rotary cathodes, a configuration in which a plurality of cylindrical cathodes are arranged in parallel and targets are provided on the outer peripheral surfaces of the respective cathodes can be adopted. Each of the plurality of rotary cathodes may be rotatable around the cylindrical axis. The film formation chamber 4 may be provided with a swing mechanism for swinging the magnetron magnetic circuit substantially parallel to the glass substrate 11 with respect to the plurality of rotary cathodes when processing the glass substrate 11.

[0052] <Plasma Chamber, Platen Chamber> In the plasma chamber 4m, the target 7 and the backing plate 6 constituting the cathode unit 5 are arranged. In the plasma chamber 4m, a film formation process is performed on the glass substrate 11. That is, the plasma chamber 4m is an example of a "processing chamber". The platen chamber 4n is adjacent to the plasma chamber 4m in the X direction. The platen chamber 4n has a transfer port 4a. The transfer port 4a is an opening through which the glass substrate 11 passes when the glass substrate 11 is transferred in the X direction. The platen chamber 4n is adjacent to the transfer chamber 3 via the transfer port 4a. A partition valve is arranged at the transfer port 4a. By opening and closing the partition valve, the platen chamber 4n and the transfer chamber 3 communicate with each other, or the platen chamber 4n is isolated from the transfer chamber 3. The platen chamber 4n supports the glass substrate 11 during the film formation process in the plasma chamber 4m. That is, the platen chamber 4n is an example of a "backing chamber".

[0053] The plasma chamber 4m has an opening 40 that opens into the platen chamber 4n and a connection end 41 that surrounds the opening 40. The connection end 41 is a part that is connected to the connection end 43 of the platen chamber 4n. The platen chamber 4n has an opening 42 that opens into the plasma chamber 4m and a connection end 43 that surrounds the opening 42. The connection end 43 is a part that is connected to the connection end 41 of the plasma chamber 4m. The connection end 41 and the connection end 43 are connected so as to face each other. By connecting the connection end 41 and the connection end 43, the plasma chamber 4m and the platen chamber 4n are assembled, and the film deposition chamber 4 is formed. Also, since the connection end 41 and the connection end 43 are connected, the opening 40 and the opening 42 communicate with each other. As a result, an internal space 44 is formed between the plasma chamber 4m and the platen chamber 4n. The internal space 44 is sealed by the connection of the connection end 41 and the connection end 43. In the sealed structure of the internal space 44, an O-ring is disposed on one of the connection end 41 and the connection end 43, and a sealing surface is formed on the other of the connection end 41 and the connection end 43. The surface where the connection end 41 and the connection end 43 are connected to each other is the docking surface 4d. The docking surface is an example of "the boundary position between the processing chamber and the back chamber".

[0054] The plasma chamber 4m has a target 7 and a backing plate 6. The target 7 and the backing plate 6 face a mask 20, which will be described later. The target 7 and the backing plate 6 provided in the plasma chamber 4m protrude from the docking surface 4d (connection end 41) toward the platen chamber 4n. In other words, the target 7 and the backing plate 6 are not disposed inside the plasma chamber 4m. Note that in this embodiment, the shape of the docking surface 4d is substantially flat. The shape of the docking surface 4d is not limited to a flat surface. The shape of the docking surface 4d may be determined according to the shape of the opening 40 of the plasma chamber 4m and the shape of the opening 42 of the platen chamber 4n.

[0055] <Front space, back space> As shown in FIGS. 1 and 2, the internal space 44 of the film forming chamber 4 has a front space 45 and a back space 46 arranged in the X direction. The front space 45 is a space facing the surface where the film forming surface of the glass substrate 11 is exposed during film formation. The front space 45 is formed by a combination of the internal space of the plasma chamber 4m and the internal space of the platen chamber 4n. That is, the front space 45 is formed by an opening 42 surrounded by the connection end 43 of the platen chamber 4n closer to the plasma chamber 4m than the mask 20, and an opening 40 surrounded by the connection end 41 of the plasma chamber 4m. The back space 46 is the main internal space of the platen chamber 4n. The back space 46 is a space facing the back surface of the glass substrate 11 during film formation. Such a front space 45 and a back space 46 form the internal space 44 in the sealed state of the film forming chamber 4 assembled by the plasma chamber 4m and the platen chamber 4n.

[0056] In FIG. 2, the position indicated by the reference numeral 4b is the boundary position between the front space 45 and the back space 46 in the film forming chamber 4. The mask 20 is disposed at the boundary position 4b. In the front space 45 of the film forming chamber 4, a backing plate 6 to which the target 7 is fixed is disposed. In the back space 46 of the film forming chamber 4, a rotation support mechanism 10 for rotating the glass substrate 11 while supporting the glass substrate 11 carried in from the transfer port 4a is disposed. The rotation support mechanism 10 can be referred to as a platen mechanism.

[0057] In the X direction, the boundary position 4b between the front space 45 and the back space 46 in the film forming chamber 4 is closer to the position of the transfer port 4a than the position of the docking surface 4d where the connection end 41 of the plasma chamber 4m and the connection end 43 of the platen chamber 4n meet.

[0058] Note that the plasma chamber 4m and the platen chamber 4n are separable from each other in the X direction. In the state where the plasma chamber 4m and the platen chamber 4n are separated, the mask 20 is disposed inside the platen chamber 4n, and the target 7 and the backing plate 6 are disposed inside the plasma chamber 4m.

[0059] <Mask> The mask 20 is disposed inside the platen chamber 4n. Inside the platen chamber 4n, the position of the mask 20 is closer to the position of the transfer port 4a than the position of the docking surface 4d. In other words, the mask 20 is disposed between the docking surface 4d and the glass substrate 11 at the film forming standing position. The mask 20 is erected so as to face the plasma chamber 4m. The mask 20 has a substantially rectangular mask frame and a plurality of ribs stretched on the mask frame so as to extend in the vertical and horizontal directions. The plurality of ribs partition an inner region of the mask frame. The mask frame is formed of a metal such as SUS having rigidity. The ribs are formed of a metal foil such as Invar. The ribs are fixed to the mask frame in a state where both ends of the ribs are pulled by the mask frame. Inside the mask frame, a region surrounded by a plurality of ribs stretched in the vertical and horizontal directions is a film forming region.

[0060] The mask 20 has a film forming port 20b. The film forming port 20b is an opening formed by the mask frame. The film forming port 20b opens at a boundary position 4b between the front space 45 and the back space 46. The mask 20 has a mask support portion 20g. The mask support portion 20g is provided at both ends of the mask frame in the Z direction and at both ends of the mask frame in the Y direction. The mask 20 is supported by the platen chamber 4n by the mask support portion 20g. At this time, the position of the mask 20 can be aligned in the pre-film forming process by a mask alignment portion (not shown).

[0061] <Rotary Support Mechanism, Rotating Shaft, Substrate Holding Portion> The rotary support mechanism 10 has a rotating shaft 12 and a substrate holding portion 13. The rotating shaft 12 is rotatable around the rotation center. The substrate holding portion 13 is attached to the rotating shaft 12. The substrate holding portion 13 is, for example, a platen. When the substrate holding portion 13 is in the horizontal conveyance position, the shape of the substrate holding portion 13 is substantially rectangular flat plate-shaped as viewed in the Z direction. The substrate holding portion 13 can support the back surface of the glass substrate 11 within the platen chamber 4n. The rotary support mechanism 10 can rotate the glass substrate 11 between the horizontal conveyance position and the film formation standing position while supporting the glass substrate 11 by the substrate holding portion 13.

[0062] A more specific description will be given. When the substrate holding portion 13 is in the horizontal conveyance position, the substrate holding portion 13 supports the glass substrate 11 so as to face in the X direction so that the glass substrate 11 can be moved horizontally through the conveyance port 4a. Specifically, when the rotary support mechanism 10 arranges the substrate holding portion 13 in the horizontal conveyance position, it is possible to carry the glass substrate 11 into the inside of the film formation chamber 4 from the conveyance port 4a, and to carry the glass substrate 11 out of the film formation chamber 4 from the conveyance port 4a. That is, in the horizontal conveyance position, the rotary support mechanism 10 maintains the support state for supporting the glass substrate 11 and releases the support state.

[0063] When the substrate holding portion 13 holding the glass substrate 11 is in the film formation standing position, the substrate holding portion 13 supports the glass substrate 11 so that the glass substrate 11 faces the mask 20. In this state, the rotary support mechanism 10 holds (supports) the glass substrate 11 so as to face the target 7 during film formation, and a film formation process is performed on the glass substrate 11.

[0064] FIG. 3 is a schematic side view showing the substrate holding portion 13 in the rotary support mechanism 10 according to the present embodiment. FIG. 3 shows a state where the substrate holding portion 13 is in the horizontal conveyance position. As shown in FIGS. 2 and 3, the rotary support mechanism 10 is located below in the back space 46 inside the platen chamber 4n. The rotation axis 12 extends in the Y direction. The rotation axis 12 is substantially parallel to at least one of the conveyance port 4a and the docking surface 4d.

[0065] <Rotation driving unit> As shown in FIG. 2, a rotation driving unit 12A is connected to the rotation axis 12. The rotation driving unit 12A enables the rotation axis 12 to rotate around the rotation center. The rotation driving unit 12A includes a rotation driving source such as a motor and a rotation transmission unit such as a speed reducer that transmits the driving force of the rotation driving source to the rotation axis 12. The rotation axis 12 penetrates the side wall forming the platen chamber 4n. The rotation axis 12 penetrates the side wall forming the back side space 46 of the platen chamber 4n. The position where the rotation axis 12 penetrates the side wall of the platen chamber 4n is sufficiently spaced apart from the docking surface 4d. The rotation driving unit 12A is disposed outside the film forming chamber 4. The rotation driving unit 12A is connected to both ends of the rotation axis 12 in the Y direction. That is, the rotation driving unit 12A is connected to two locations, one end (first end) and the other end (second end) of the rotation axis 12. The connection structure of the rotation driving unit 12A and the rotation axis 12 will be specifically described below.

[0066] The moment load caused by the weights of the substrate holding unit 13 and the frame unit 14 acts on the rotation axis 12. In particular, when the substrate holding unit 13 is disposed at the horizontal conveyance position, the moment loads of the substrate holding unit 13 and the frame unit 14 act significantly on the rotation axis 12. For example, when the rotational drive unit 12A that rotates the rotating shaft 12 is connected only to one end of the rotating shaft 12, due to the moment loads of the substrate holding unit 13 and the frame unit 14, a torsional deformation occurs in the rotating shaft 12 from one end toward the other end. Focusing on the position of the rotating shaft 12 where the displacement amount (deformation amount) around the rotation axis of the rotating shaft 12 due to the moment load occurs, the rotating shaft 12 deforms such that the displacement amount increases from the position of one end to the position of the other end of the rotating shaft 12. Along with such torsional deformation in the rotating shaft 12, a displacement occurs between the frame unit 14 connected to one end of the rotating shaft 12 and the frame unit 14 connected to the other end of the rotating shaft 12.

[0067] On the other hand, in the connection structure between the rotational drive unit 12A and the rotating shaft 12 according to the present embodiment, the rotational drive unit 12A is connected to both ends of the rotating shaft 12. In such a connection structure, compared with the structure in which the rotational drive unit 12A is connected only to one end of the rotating shaft 12, the occurrence of torsional deformation in the rotating shaft 12 is suppressed. In other words, the displacement amount (deformation amount) around the rotation axis of the rotating shaft 12 due to the moment load is the same at one end of the rotating shaft 12 and the other end of the rotating shaft 12. Thereby, no displacement occurs between the frame unit 14 connected to one end of the rotating shaft 12 and the frame unit 14 connected to the other end of the rotating shaft 12. Furthermore, in the connection structure according to the present embodiment, the load applied to the rotating shaft 12 is dispersed to two locations, one end and the other end of the rotating shaft 12. Therefore, the stress generated in the rotating shaft 12 can be reduced. With such a structure, it is possible to rotate the substrate holding unit 13 having a larger weight. For example, the connection structure according to the present embodiment can be applied to a substrate processing apparatus that processes a larger-sized glass substrate 11.

[0068] <Fastening Structure between Rotating Shaft and Substrate Holding Unit> FIG. 4 is an enlarged view showing a main part of the rotation support mechanism 10 according to the present embodiment, and is a cross-sectional view showing a fastening structure between the substrate holding portion 13 and the rotating shaft 12. FIG. 5 is a schematic plan view showing the rotation support mechanism 10 according to the present embodiment. Note that FIGS. 4 and 5 show a state where the substrate holding portion 13 is in the horizontal transfer position. As shown in FIGS. 2 to 4, the substrate holding portion 13 is attached to the rotating shaft 12 via the base portion 12a and the frame portion 14.

[0069] The base portion 12a and the frame portion 14 form an attachment structure for attaching the substrate holding portion 13 to the rotating shaft 12. In a state where the substrate holding portion 13 is attached to the rotating shaft 12, the plane of the substrate holding portion 13 in the XY direction is slightly separated from the axis of the rotating shaft 12 in the Y direction and does not coincide. The substrate holding portion 13 rotates following the rotation around the rotation center of the rotating shaft 12. Thereby, the substrate holding portion 13 can rotate and move the glass substrate 11 held by the substrate holding portion 13 around the rotation center of the rotating shaft 12.

[0070] The rotation support mechanism 10 has a fastening structure for attaching the substrate holding portion 13 to the rotating shaft 12. As shown in FIGS. 3 to 5, the fastening structure includes a base portion 12a, a frame portion 14, and a plurality of bolts 15. The bolt 15 is an example of a "fastening member".

[0071] <Base portion> The base portion 12a is provided integrally with the rotating shaft 12. The base portion 12a may be fixedly connected to the rotating shaft 12 by welding or the like. Alternatively, the base portion 12a may be formed integrally with the rotating shaft 12 by machining such as cutting. The base portion 12a is formed in a block shape having a shape larger than the diameter of the rotating shaft 12. The base portion 12a has a first attachment plane 16a that abuts against a flange portion 14f described later. The first attachment plane 16a is a plane along the axial direction of the rotating shaft 12 extending in the Y direction and the X direction that is a tangential direction with respect to the outer peripheral surface of the rotating shaft 12. A female screw portion corresponding to the bolt 15 is formed in the base portion 12a. The female screw portion opens to the first attachment plane 16a.

[0072] <Frame portion> The frame portion 14 is formed integrally with the substrate holding portion 13. The frame portion 14 has a radial arm portion 14r and an axial arm portion 14a. The radial arm portion 14r extends in the X direction. In other words, the radial arm portion 14r extends in the radial direction of the rotation axis 12. The axial arm portion 14a extends in the Y direction. In other words, the axial arm portion 14a extends in the axial direction of the rotation axis 12.

[0073] The radial arm portion 14r and the axial arm portion 14a of the frame portion 14 form a rectangular frame so as to correspond to the rectangular substrate holding portion 13 in plan view. Two radial arm portions 14r are provided along both ends in the axial direction of the rectangular rotation axis 12 of the substrate holding portion 13. For example, two axial arm portions 14a are provided so as to extend in the axial direction of the rotation axis 12. In the radial arm portion 14r, a window portion 14b penetrating the frame portion 14 is formed at the center of the frame portion 14 in the Z direction when viewed in the Y direction. By forming the window portion 14b, the weight of the rotation support mechanism 10 can be reduced. Furthermore, in the rotation support mechanism 10, the weight of the portion near the tip 13a located at a position separated from the rotation axis 12 can be reduced.

[0074] <Flange portion> The frame portion 14 has two flange portions 14f formed at both end positions close to the rotation axis 12. The flange portion 14f is provided integrally with the substrate holding portion 13. Each of the two flange portions 14f is formed integrally with the radial arm portion 14r and the axial arm portion 14a. The flange portion 14f is formed along the first mounting plane 16a. The flange portion 14f is provided on both sides in the Y direction of the rotation axis 12 of the radial arm portion 14r. A through hole corresponding to the bolt 15 is formed in the flange portion 14f.

[0075] The flange portion 14f has a second mounting plane 16b that abuts against the pedestal portion 12a. Each of the first mounting plane 16a and the second mounting plane 16b is formed to have a plane. The first mounting plane 16a and the second mounting plane 16b are formed in a substantially equal rectangular shape.

[0076] <Convex portion, concave portion> On each of the first mounting plane 16a and the second mounting plane 16b, an anti-sliding portion 17 is formed. Specifically, the anti-sliding portion 17 is a convex portion and a concave portion that engage with each other. In the present embodiment, as the anti-sliding portion 17, a convex portion 17a is formed on the first mounting plane 16a, and a concave portion 17b is formed on the second mounting plane 16b. The convex portion 17a is an example of the "first engaging portion". The concave portion 17b is an example of the "second engaging portion".

[0077] The convex portion 17a is formed at the lower end of the first mounting plane 16a in the Z direction. Here, the lower end is the position below in the direction of gravity when the plane of the substrate holding portion 13 is in the horizontal transfer position where it is horizontal. The convex portion 17a is a ridge portion extending parallel to the axial direction of the rotation axis 12. Similarly, the concave portion 17b is formed at the lower end of the second mounting plane 16b in the Z direction. The concave portion 17b is a concave groove or a stepped portion extending parallel to the axial direction of the rotation axis 12. In a state where the first mounting plane 16a and the second mounting plane 16b are in contact with each other, the convex portion 17a and the concave portion 17b are engaged with each other.

[0078] <Bolt> The frame portion 14 and the rotation axis 12 are fastened by a plurality of bolts 15. In a state where the first mounting plane 16a and the second mounting plane 16b are in contact with each other, the bolt 15 penetrates the through-hole of the flange portion 14f in a direction intersecting the first mounting plane 16a and the second mounting plane 16b, and is fastened to the base portion 12a. The substrate holding portion 13 is fastened to the rotation axis 12 by the plurality of bolts 15.

[0079] The direction in which the bolt 15 is fastened, that is, the direction in which the bolt 15 is inserted into the through-hole of the flange portion 14f and the direction in which the bolt 15 is screwed into the female screw portion, is preferably the direction (X direction) perpendicular to the first mounting plane 16a and the second mounting plane 16b. When the plane of the substrate holding portion 13 is in the horizontal conveyance position, the plurality of bolts 15 are arranged so as to be aligned in the Z direction. Two adjacent bolts 15 among the plurality of bolts 15 are spaced apart. By fastening with the plurality of bolts 15, the flange portion 14f is pressed against the base portion 12a, and the flange portion 14f and the base portion 12a are fastened. The directions of the plurality of bolts 15 screwed into the female screw portion of the base portion 12a are parallel to each other.

[0080] <Non-contact stopping portion> The rotation support mechanism 10 has a non-contact stopping portion 10mg. The non-contact stopping portion 10mg is configured to stop the substrate holding portion 13 at the film forming standing position during the rotational drive for rotating the substrate holding portion 13 from the horizontal conveyance position to the film forming standing position. In other words, the non-contact stopping portion 10mg has a function of stopping the movement of the substrate holding portion 13 rotated from the horizontal conveyance position toward the film forming standing position at the film forming standing position. The non-contact stopping portion 10mg is provided at the tip 13a of the substrate holding portion 13.

[0081] The non-contact stopping portion 10mg is also disposed above the mask 20 so as to correspond to the substrate holding portion 13 in the film forming standing position. In other words, the non-contact stopping portion 10mg disposed at the tip 13a of the substrate holding portion 13 is the first non-contact stopping portion. The non-contact stopping portion 10mg disposed above the mask 20 is the second non-contact stopping portion. The first non-contact stopping portion and the second non-contact stopping portion are, for example, magnets that repel each other. The first non-contact stopping portion and the second non-contact stopping portion face each other. The polarities of the magnets constituting the first non-contact stopping portion and the second non-contact stopping portion are the same as each other.

[0082] Alternatively, as the configuration of the non-contact stopping portion 10mg, for example, magnets having polarities attracting each other may be employed. In this case, a first non-contact stopping portion is disposed at the tip 13a of the substrate holding portion 13. In a region near the upper part of the mask 20, a second non-contact stopping portion is disposed outside the rotation range of the substrate holding portion 13. The polarity of the magnet constituting the first non-contact stopping portion is different from the polarity of the magnet constituting the second non-contact stopping portion. For this reason, when the substrate holding portion 13 is in the film-forming upright position, the first non-contact stopping portion disposed at the tip 13a of the substrate holding portion 13 is attracted to the second non-contact stopping portion disposed outside the rotation range of the substrate holding portion 13.

[0083] <Horizontal transfer position, film-forming upright position> As shown in FIG. 2, the substrate holding portion 13 is capable of a rotation operation by being rotated around the rotation center of the rotation shaft 12 by the rotation drive portion 12A. The rotatable range of the substrate holding portion 13 is set so that the substrate holding portion 13 rotates between the horizontal transfer position and the film-forming upright position. In FIG. 2, this rotatable range Rr is indicated by an arc-shaped broken line.

[0084] Here, the horizontal transfer position (lying position) is a position where the substrate holding portion 13 is maintained in a horizontal state so that the glass substrate 11 can move between the platen chamber 4n and the outside of the film-forming chamber 4 when the glass substrate 11 is moved into the film-forming chamber 4. In the horizontal transfer position, the substrate holding portion 13 is disposed at a horizontal placement position that is slightly above the rotation shaft 12 and in a substantially horizontal direction.

[0085] In addition, the film-forming upright position (standing position) is a position where the substrate holding part 13 stands up along the mask 20 so that the glass substrate 11 faces the mask 20 when performing surface treatment on the glass substrate 11 supported inside the back chamber 4n. In the film-forming upright position, the substrate holding part 13 is located directly above the rotation axis 12. Here, in such a film-forming upright position, that is, when the substrate holding part 13 is located directly above the rotation axis 12, the center of gravity Gv of the substrate holding part 13 does not exceed a straight line RL extending vertically upward from the axis 12r of the rotation axis 12. In other words, in the X direction, the center of gravity Gv of the substrate holding part 13 is not located between the straight line RL and the plasma chamber 4m. That is, in the rotational drive of the substrate holding part 13 from the horizontal transfer position to the film-forming upright position, the position of the center of gravity Gv of the substrate holding part 13 in the film-forming upright position does not exceed the straight line RL. In other words, the position of the center of gravity Gv may be on the straight line RL or may be in a position in front of the straight line RL in the rotational direction. The straight line RL is an example of "a position directly above the rotation axis in the vertical direction".

[0086] Also, in the film-forming upright position, the center of gravity Gv of the substrate holding part 13 may be slightly closer to the center of gravity Gh of the substrate holding part 13 in the horizontal transfer position than above the straight line RL extending vertically upward from the axis of the rotation axis 12. Regarding the center of gravity Gv of the substrate holding part 13 in the film-forming upright position and the center of gravity Gh of the substrate holding part 13 in the horizontal transfer position, the center of gravity in the state where the substrate holding part 13 holds the glass substrate 11 is considered. Based on this center of gravity, the rotatable range is set. The center of gravity Gv and the center of gravity Gh are on the same side with respect to the straight line RL extending vertically from the rotation axis 12. In other words, the center of gravity Gv and the center of gravity Gh are located between the straight line RL and the transfer port 4a. A perpendicular line dropped from the center of gravity Gv intersects the line segment connecting the center of gravity Gv and the axis 12r.

[0087] In the rotation support mechanism 10, when the substrate holding part 13 is in the horizontal placement position, the transfer port 4a is located on the extension of the surface of the substrate holding part 13. In this state, the glass substrate 11 horizontally transferred from the transfer chamber 3 can be placed on the rotation support mechanism 10.

[0088] On the other hand, in the rotation support mechanism 10, when the substrate holding portion 13 is in the vertical processing position, on the front surface side of the substrate holding portion 13, as shown in FIG. 2, the glass substrate 11 can be supported from the back surface of the glass substrate 11. The front surface side of the substrate holding portion 13 has a contour larger than that of the glass substrate 11. When the substrate holding portion 13 is in the vertical processing position (film formation standing position), the front surface side of the substrate holding portion 13 is positioned so as to substantially close the boundary position 4b. In this state, the surface 11T (see FIG. 8) of the glass substrate 11 supported by the substrate holding portion 13 faces the backing plate 6, and film formation can be performed on the surface 11T of the glass substrate 11.

[0089] A plurality of support pins are provided on the substrate holding portion 13 which, when the substrate holding portion 13 is rotated to the horizontal conveyance position, contact the back surface of the glass substrate 11 and support the glass substrate 11. The support pins can press the glass substrate 11 against the mask 20 while the substrate holding portion 13 is rotated from the horizontal conveyance position to the film formation standing position (vertical processing position), and when the substrate holding portion 13 is in the film formation standing position (vertical processing position). The plurality of support pins are dispersedly arranged at a plurality of locations on the surface of the substrate holding portion 13 so as to face the back surface of the glass substrate 11. The pressing force acting on the back surface of the glass substrate 11 by the support pins is adjustable. The tip of the support pin has a contact portion formed in a hemispherical shape with resin.

[0090] A plurality of clamps are provided on the substrate holding portion 13. The clamps support the glass substrate 11 by contacting the end face of the periphery of the glass substrate 11 in the rotation range of the substrate holding portion 13 from the horizontal conveyance position to the film formation standing position (vertical processing position). In the substrate holding portion 13, a plurality of clamps are arranged at positions that become the periphery of the glass substrate 11 placed on the upper surface of the substrate holding portion 13. A plurality of clamps are provided at positions outside the periphery of the substrate holding portion 13. The clamps perform alignment of the glass substrate 11 by contacting the end face of the periphery of the glass substrate 11 when the glass substrate 11 is placed on the support pins.

[0091] Each of the plurality of clamps is swingable between an outer position outside the center of the substrate holding portion 13 and a support position inside the center of the substrate holding portion 13 by a clamp driving and moving device (not shown). When the clamp abuts against the end face of the periphery of the glass substrate 11, it prevents the glass substrate 11 from separating from the substrate holding portion 13. By swinging the clamp between the outer position and the support position with respect to the substrate holding portion 13, the glass substrate 11 can be placed on the substrate holding portion 13 and carried out from the substrate holding portion 13.

[0092] The support pins contact the back surface of the glass substrate 11 while applying an elastic force in a direction orthogonal to the surface of the glass substrate 11 to support the weight of the glass substrate 11. On the other hand, the clamp supports the weight of the glass substrate 11 in a state where the elastic force is applied in a direction parallel to the surface of the glass substrate 11 and in contact with the end face of the glass substrate 11.

[0093] The rotation support mechanism 10 includes a lift pin 50 and a lift pin moving device (not shown) that moves the lift pin 50 up and down. The lift pin 50 is provided on the substrate holding portion 13. The lift pin 50 extends in the vertical direction. A plurality of lift pins 50 are arranged at substantially equal intervals along the upper surface of the substrate holding portion 13. When the glass substrate 11 is carried into the film forming chamber 4 (4A) or when the glass substrate 11 is carried out from the film forming chamber 4 (4A), the lift pin 50 projects upward from the substrate holding portion 13 arranged at the horizontal transfer position to support the glass substrate 11 located above the substrate holding portion 13.

[0094] The lift pin 50 supports the glass substrate 11 by abutting its tip against the back surface of the glass substrate 11 above the substrate holding portion 13 at the horizontal transfer position, and then moves vertically downward to place the glass substrate 11 on the substrate holding portion 13. The tip of the lift pin 50 is located above the surface of the substrate holding portion 13 in the raised position, and is in a position that does not interfere with the rotational movement of the substrate holding portion 13 in the lowered position. The lift pin 50 may be provided on the substrate holding portion 13 or on the bottom of the platen chamber 4n.

[0095] The lift pin moving device is a driving device such as a driving motor disposed outside the film forming chambers 4 and 4A. The lift pin moving device has a configuration in which the lift pin 50 extends or retracts by the driving device. The lift pin 50 can be driven by the driving device while maintaining the sealing of the chamber 4. With this configuration, when loading or unloading the glass substrate 11 into / from the film forming chambers 4 and 4A, it becomes possible to freely transfer the glass substrate 11 between the substrate holding portion 13 and the robot hand of the transfer device 3a.

[0096] <Film forming method> Next, a method of forming a film in the substrate processing apparatus 1 according to the present embodiment will be described. In the following description, among the two film forming chambers 4 and 4A, substrate processing for forming a film on the glass substrate 11 held by the rotation support mechanism 10 in the film forming chamber 4 will be described. Note that since the structure for rotating the glass substrate 11 so that the glass substrate 11 faces the mask 20 is the same in the film forming chambers 4 and 4A, the description of the film forming chamber 4A will be omitted.

[0097] First, the glass substrate 11 is carried into the substrate processing apparatus 1 from the outside. The inside of the substrate processing apparatus 1 is maintained in a vacuum atmosphere (see FIG. 1). The glass substrate 11 carried into the substrate processing apparatus 1 is first placed on the positioning member inside the load / unload chamber 2. Thereby, the glass substrate 11 is aligned at a predetermined position on the positioning member.

[0098] Next, in the transfer chamber 3, the transfer device 3a operates, and the robot hand of the transfer device 3a is inserted into the load / unload chamber 2. In the load / unload chamber 2, the glass substrate 11 placed on the positioning member is supported by the robot hand of the transfer device 3a. The glass substrate 11 is taken out from the load / unload chamber 2 by the transfer device 3a. Then, the glass substrate 11 is transferred to the film forming chamber 4 via the transfer chamber 3 by the transfer device 3a.

[0099] Figures 6 to 8 are schematic side views showing the processes performed in the film formation chamber 4 in the present embodiment. Note that in these Figures 6 to 8, the configurations described in the above-described embodiment may be omitted. First, in the film formation chamber 4, as shown in Figure 6, in the rotary support mechanism 10, the rotary shaft 12 is rotated by the rotary drive unit 12A. As a result, the substrate holding unit 13 is disposed at the horizontal transfer position. Thereafter, the transfer port 4a of the film formation chamber 4 is opened. By the lift pin moving device, the lift pin 50 is set at the preparation position protruding from the surface of the substrate holding unit 13. At the same time, the clamp is in the position opened outward along the contour of the substrate holding unit 13 and is retracted from the upper position of the substrate holding unit 13.

[0100] In this state, as shown by the arrow A in Figure 6, the glass substrate 11 reaches the film formation chamber 4 through the transfer port 4a by the robot hand of the transfer device 3a. The glass substrate 11 is transferred to the back space 46 inside the platen chamber 4n by the robot hand of the transfer device 3a. The robot hand of the transfer device 3a supports the glass substrate 11 above the substrate holding unit 13 of the rotary support mechanism 10 in the back space 46.

[0101] First, the robot hand of the transfer device 3a supports the glass substrate 11 in a state substantially parallel to the substrate holding unit 13. In this state, until the glass substrate 11 reaches a position above a large number of lift pins 50 protruding from the substrate holding unit 13, as shown by the arrow A in Figure 6, the glass substrate 11 is inserted into the inner space of the film formation chamber 4 from the side in the direction parallel to the surface of the substrate holding unit 13.

[0102] Next, the robot hand of the transfer device 3a descends so as to approach the substrate holding portion 13 in the direction indicated by the arrow B in FIG. 6. As a result, the glass substrate 11 is aligned at a predetermined position within the plane of the substrate holding portion 13, and the glass substrate 11 is placed on the lift pins 50 of the substrate holding portion 13. The transfer of the glass substrate 11 from the transfer device 3a to the lift pins 50 is performed. Next, the arm of the transfer device 3a retracts from the film forming chamber 4 to the transfer chamber 3, and the transfer port 4a of the film forming chamber 4 is closed. The film forming chamber 4 is depressurized to a vacuum state by the high-vacuum exhaust portion of the gas atmosphere setting mechanism 4g.

[0103] Then, the lift pin moving device lowers the lift pins 50 in the direction indicated by the arrow B in FIG. 6. By storing the lift pins 50 below the substrate holding portion 13, as shown in FIG. 7, the glass substrate 11 is placed on the substrate holding portion 13. At this time, in the substrate holding portion 13, the contact portion located at the tip of the support pin contacts the back surface 11B of the glass substrate 11 to support the glass substrate 11.

[0104] Next, by driving the clamp driving and moving device, the clamp swings to a support position close to the substrate holding portion 13, and the end faces of the periphery of the glass substrate 11 contact a plurality of clamps. In this state, the clamp aligns the glass substrate 11 at the film forming processing position. The clamp locks the periphery of the glass substrate 11. As a result, the glass substrate 11 is held by the rotation support mechanism 10. At this time, the weight of the glass substrate 11 is supported by the support pins provided on the substrate holding portion 13.

[0105] With the substrate holding portion 13 in the horizontal transfer position supporting the glass substrate 11, the center of gravity Gh of the rotation support mechanism 10 is located between the rotation axis 12 and the tip 13a, as shown in FIG. 7. That is, the center of gravity Gh is located on the left side of the rotation axis 12 in the X direction, as shown in FIGS. 2 and 7.

[0106] Next, the rotary shaft 12 is rotated by the rotation drive unit 12A. As a result, as indicated by the arrow C in FIGS. 7 and 8, the substrate holding unit 13 attached via the base portion 12a and the frame portion 14 rotates around the rotation center of the rotary shaft 12. Thereby, the substrate holding unit 13 rotates and rises so as to reach the film forming upright position. During the rotation operation, the state in which the glass substrate 11 is in contact with the support pins and the clamps and is held by the substrate holding unit 13 is maintained.

[0107] When the substrate holding unit 13 reaches the film forming upright position, the rotation operation is stopped by controlling the rotary shaft 12 by the rotation drive unit 12A. At this time, when the substrate holding unit 13 approaches the film forming upright position, a magnetic force acts between the magnet of the non-contact stop portion 10mg provided at the tip 13a and the magnet of the non-contact stop portion 10mg near the upper part of the mask 20. Due to the action of the magnetic force by the mutual magnets, the rotation of the substrate holding unit 13 is delayed, and the rotational movement of the substrate holding unit 13 is stopped so that the substrate holding unit 13 does not contact the mask 20.

[0108] When the substrate holding unit 13 reaches the film forming upright position, the film forming port 20b is substantially closed by the glass substrate 11 and the substrate holding unit 13. At the film forming upright position, in the horizontal direction, the tip 13a is slightly closer to the transfer port 4a than the rotary shaft 12. That is, the substrate holding unit 13 is not in a position that is exactly vertically upward from the rotary shaft 12. The surface 11T of the glass substrate 11 is inclined so as to be slightly upward. The inclination angle at this time is called the tilt angle.

[0109] In a state where the substrate holding unit 13 at the film forming upright position supports the glass substrate 11, the center of gravity Gv in the X direction of the rotation support mechanism 10 is closer to the position of the tip 13a in the X direction than the position of the rotary shaft 12 in the X direction, as shown in FIG. 8. In other words, the center of gravity Gv is slightly to the left of the rotary shaft 12 in the X direction in FIGS. 2 and 8. The center of gravity Gv is, in FIGS. 2 and 8, slightly to the left of the straight line RL passing through the center of rotation of the rotation axis 12 in the vertical direction. The movement range from the center of gravity Gh to the center of gravity Gv associated with the rotation operation does not straddle the straight line RL extending in the Z direction from the center of rotation of the rotation axis 12.

[0110] In this way, with respect to the straight line RL, the center of gravity Gh at the horizontal conveyance position and the center of gravity Gv at the film forming upright position are located on the same side in the X direction. Specifically, in FIG. 8, the centers of gravity Gh and Gv are located to the left of the straight line RL. In other words, the centers of gravity Gh and Gv are not located to the right of the straight line RL. For this reason, the moment load (moment) applied from the substrate holding portion 13 to the rotation axis 12 changes in magnitude as the rotation operation progresses, but the direction in which the moment load acts on the rotation axis 12 does not reverse.

[0111] In other words, the moment applied to the rotation axis 12 is represented by the product of "the center of gravity of the substrate holding portion 13" and "the distance between the rotation axis 12 and the substrate holding portion 13". This moment acts in the counterclockwise direction when the substrate holding portion 13 rotates in the direction of the arrow C shown in FIG. 8. In the rotation direction, since the center of gravity Gv does not exceed the straight line RL, the moment does not act in the clockwise direction.

[0112] Therefore, even when the film forming upright position is reached at the end of the rotation operation, the moment applied to the rotation axis 12 maintains the same direction as the moment during the rotation operation from the horizontal conveyance position at the start of the rotation operation. For this reason, even if the minute gaps between the components constituting the rotation support mechanism 10 expand with respect to each other, since the direction of the acting moment due to the movement of the center of gravity of the substrate holding portion 13 does not change, no impact is generated due to the narrowing of the minute gaps between the components. Thereby, even if the movement of the center of gravity of the substrate holding portion 13 occurs due to the rotation of the rotation axis 12, the rotation support mechanism 10 can suppress the occurrence of displacement and impact between the components.

[0113] Substantially simultaneously with the substrate holding part 13 reaching the film formation standing position, as shown in FIG. 8, the glass substrate 11 approaches the mask 20. The glass substrate 11 approaches the boundary position 4b between the front space 45 and the back space 46 inside the platen chamber 4n. In this state, the alignment of the mask 20 is performed by the mask alignment part. The mask alignment part aligns the position in the plane with the glass substrate 11. Specifically, the relative position in the plane between the mask 20 and the glass substrate 11 is detected by an imaging device (not shown). Based on this detection result, the mask 20 is driven by the mask alignment part to align the contours of the mask 20 and the glass substrate 11.

[0114] After the alignment of the position of the mask 20 in the plane is completed, similarly, the mask alignment part moves the mask 20 in a direction perpendicular to the plane of the mask 20. Thereby, the mask 20 is brought into contact with the glass substrate 11. At this time, the substrate holding part 13 at the film formation standing position (vertical processing position, film formation standing position) does not move from the vertical processing position. The mask 20 is driven so as to move in a direction approaching the glass substrate 11 in order to bring the mask 20 closer to the glass substrate 11. Thereby, the mask 20 comes into contact with the glass substrate 11.

[0115] At this time, no pressing force other than supporting the own weight of the glass substrate 11 acts on the glass substrate 11 from the support pins. Furthermore, even after the mask 20 comes into contact with the glass substrate 11, the mask 20 is made to adhere to the glass substrate 11. For this purpose, the mask 20 is driven so that the mask 20 and the glass substrate 11 approach each other further in a direction perpendicular to the plane of the mask 20. At this time, the substrate holding part 13 at the film formation standing position is not driven. Due to the movement of the mask 20, the glass substrate 11 in contact with the mask 20 is pressed by the mask 20. Thereby, the support pins and the clamp are pressed via the glass substrate 11.

[0116] In this way, the substrate holding portion 13 is rotated to the film formation standing position, and the glass substrate 11 and the mask 20 are brought into close contact with each other. At the same time, inside the platen chamber 4n, the boundary position 4b between the front space 45 and the back space 46 is blocked. At the boundary position 4b, the glass substrate 11 is exposed toward the front space 45 through the film formation opening 20b which is an opening formed by the mask frame 20a. The glass substrate 11 is disposed at a position facing the backing plate 6. The backing plate 6 is surrounded by the wall portion of the platen chamber 4n around it with respect to the direction facing the glass substrate 11.

[0117] When the substrate holding portion 13 is disposed at the film formation standing position, the glass substrate 11 held by the rotation support mechanism 10 comes into close contact with the mask 20. When the substrate holding portion 13 is disposed at the film formation standing position, the glass substrate 11 is held in a state where the surface 11T of the glass substrate 11 and the surface of the backing plate 6 are substantially parallel. In this state, a film formation process is performed in the front space 45 in the film formation chamber 4, and a film is formed on the surface 11T of the glass substrate 11.

[0118] In the film formation process, a sputtering gas and a reaction gas are supplied from the gas introduction portion of the gas atmosphere setting mechanism 4g to the front space 45 of the film formation chamber 4. In the film formation process, a sputtering voltage is applied from an external power source 4p to the backing plate 6. Also, in the film formation process, a predetermined magnetic field is formed on the target 7 by the magnetron magnetic circuit. At the same time, a necessary rocking operation or rotation operation is performed in the backing plate 6 or the magnetron magnetic circuit.

[0119] Thereby, ions of the sputtering gas are excited by the plasma generated in the front space 45 of the film formation chamber 4. The ions of the sputtering gas collide with the target 7 of the backing plate 6 to eject particles of the film formation material. Then, after the particles of the film formation material ejected from the target 7 and the reaction gas are combined, the combined particles of the film formation material and the reaction gas adhere to the glass substrate 11. Thereby, a predetermined film is formed on the surface 11T of the glass substrate 11.

[0120] After the film formation process is completed, the mask alignment unit moves the mask 20 so as to be separated from the surface 11T of the glass substrate 11 in a direction perpendicular to the surface of the mask 20. Thereby, the mask 20 is separated from the glass substrate 11. Next, the rotary drive unit 12A rotates the rotary shaft 12. The substrate holding unit 13 rotates around the rotation center of the rotary shaft 12 from the film formation standing position toward the horizontal conveyance position in the direction opposite to the arrow C in FIGS. 8 and 7. The substrate holding unit 13 during the rotation operation maintains the state of holding the glass substrate 11 after the film formation. During the rotation operation from the film formation standing position toward the horizontal conveyance position, the movement range from the center of gravity Gv to the center of gravity Gh associated with this rotation operation does not straddle the rotation center of the rotary shaft 12 in the X direction.

[0121] Therefore, the direction of the moment applied to the rotary shaft 12 maintains the same direction as the moment at the film formation standing position from the start point of the rotation operation when starting to move from the film formation standing position, and further to the horizontal conveyance position at the end point of the rotation operation during the rotation operation. For this reason, even if the minute gaps between the components constituting the rotation support mechanism 10 expand from each other, since the direction of the acting moment due to the movement of the center of gravity of the substrate holding unit 13 does not change, an impact caused by the narrowing of the minute gaps between the components is not generated. Thereby, even if the movement of the center of gravity of the substrate holding unit 13 is caused by the rotation of the rotary shaft 12, the rotation support mechanism 10 can suppress the occurrence of displacement and impact between the components.

[0122] By the rotation of the rotary shaft 12, the substrate holding unit 13 rotates and reaches the horizontal conveyance position. After reaching the horizontal conveyance position, the clamp is swung from the support position to the outer position to separate the clamp from the periphery of the glass substrate 11, and the locking of the glass substrate 11 by the clamp is released.

[0123] Next, the lift pin moving device raises the lift pin 50 to project the lift pin 50 from the surface of the substrate holding part 13. With the glass substrate 11 supported by the raised lift pin 50, the robot hand of the transfer device 3a is inserted between the glass substrate 11 and the substrate holding part 13. The robot hand of the transfer device 3a raises the glass substrate 11 from the substrate holding part 13 in the direction opposite to the arrow B in FIG. 6. The transfer device 3a moves in the direction opposite to the arrow A in FIG. 6. The glass substrate 11 is taken out from the film forming chamber 4 through the transfer port 4a.

[0124] Finally, through the transfer chamber 3, the glass substrate 11 on which the film forming process has been completed is carried out from the load / unload chamber 2 to the outside of the substrate processing apparatus 1. Note that in other chambers, other processes can also be performed on the glass substrate 11. Thereby, the film forming process in the substrate processing apparatus 1 is completed.

[0125] <Maintenance method> Next, a maintenance method in the substrate processing apparatus 1 according to the present embodiment will be described. FIGS. 9 to 10 are schematic side views showing a maintenance process performed in the film forming chamber 4 in the present embodiment. In the following description, among the two film forming chambers 4 and 4A, the maintenance method in the film forming chamber 4 will be described. Note that since the maintenance method is the same in the film forming chambers 4 and 4A, the description of the film forming chamber 4A will be omitted.

[0126] When performing maintenance on the substrate processing apparatus 1, in the film forming chamber 4, the substrate holding part 13 of the rotation support mechanism 10 is arranged at the horizontal transfer position. In maintenance, the glass substrate 11 is not carried into the substrate processing apparatus 1. Next, after the internal pressure of the film formation chamber 4 is set to atmospheric pressure, the film formation chamber 4 is disassembled from the docking surface 4d into the plasma chamber 4m and the platen chamber 4n. Then, the plasma chamber 4m and the platen chamber 4n are separated in the direction indicated by the arrow D in FIG. 9. As a result, the connection end 41 of the plasma chamber 4m forming the docking surface 4d and the connection end 43 of the platen chamber 4n are separated from each other.

[0127] At this time, the plasma chamber 4m is moved by the moving mechanism 4mt from the position where it was assembled with the platen chamber 4n at the docking surface 4d to the position necessary for maintenance. The moving mechanism 4mt is a known mechanism and may have a moving position regulating rail, a drive source, drive wheels, a moving carriage, etc. In this state, as shown in FIG. 9, the backing plate 6 protrudes from the connection end 41 forming the docking surface 4d of the plasma chamber 4m toward the platen chamber 4n. The connection end 41 of the plasma chamber 4m does not protrude so as to cover the upper part of the backing plate 6. That is, the backing plate 6 is exposed in the space above the plasma chamber 4m.

[0128] Next, when a sufficient separation distance between the plasma chamber 4m and the platen chamber 4n is obtained, the cathode unit 5 including the backing plate 6 that functions as a substrate processing unit is removed from the plasma chamber 4m. At this time, in the space above the plasma chamber 4m, it is possible to use a lifting mechanism such as a crane. Specifically, the lifting mechanism is brought close to the upper part of the plasma chamber 4m, and the cathode unit 5 having the backing plate 6 and the target 7 is attached to the lifting mechanism. In this state, the lifting mechanism lifts the cathode unit 5 upward in the direction indicated by the arrow E in FIG. 10. In this state, the cathode unit 5 fixed to the plasma chamber 4m is removed, and the cathode unit 5 is moved upward in the direction indicated by the arrow E in FIG. 10. Then, predetermined maintenance such as cleaning is performed on the cathode unit 5. Furthermore, when replacing the cathode unit 5, lower the new cathode unit 5 suspended by a crane in a direction opposite to the arrow E in Fig. 10. Fix the new cathode unit 5 at a predetermined position in the plasma chamber 4m.

[0129] Also, when a sufficient separation distance between the plasma chamber 4m and the platen chamber 4n is obtained, remove the mask 20 from the platen chamber 4n. At this time, similar to the case of the cathode unit 5 described above, use a lifting mechanism such as a crane to move the mask 20 in the direction indicated by the arrow F in Fig. 10. At this time, after removing the mask 20 fixed to the platen chamber 4n from the mask support portion 20g, move the mask 20 in the direction indicated by the arrow F in Fig. 10. Then, perform predetermined maintenance such as cleaning on the mask 20. Furthermore, when replacing the mask 20, move the new mask 20 suspended by a crane in a direction opposite to the arrow F in Fig. 10. Fix the mask 20 at a predetermined position of the mask support portion 20g in the platen chamber 4n.

[0130] In this way, the boundary position 4b between the front space 45 and the back space 46 is located inside the platen chamber 4n, rather than at the docking surface 4d where the plasma chamber 4m and the platen chamber 4n are assembled. Therefore, when removing the cathode unit 5 from the plasma chamber 4m, the working efficiency can be improved and the working time can be shortened.

[0131] According to the substrate processing apparatus 1 according to this embodiment, in the substrate holding unit 13 that can rotate between the horizontal transfer position and the film forming standing position, the movement range between the center of gravity Gh and the center of gravity Gv of the substrate holding unit 13 accompanying the rotation operation does not cross the straight line RL extending in the vertical direction from the rotation axis 12. Therefore, even when the substrate holding unit 13 reaches the film forming standing position which is the end point of the rotation operation, or even if the substrate holding unit 13 is between the horizontal transfer position and the film forming standing position during the rotation operation, the direction of the moment applied to the rotation axis 12 is the same. That is, in FIGS. 6 to 8, the direction of the moment applied to the rotation axis 12 is counterclockwise. In other words, the moment applied to the rotation axis 12 does not reverse. That is, the direction of the moment applied to the rotation axis 12 does not become clockwise.

[0132] As a result, even if the center of gravity of the substrate holding unit 13 moves due to the rotation of the rotation axis 12, displacement and impact between the components constituting the rotation support mechanism 10 can be suppressed. Therefore, even when the substrate holding unit 13 is rotated while supporting a large substrate having a side length exceeding 1800 mm by the substrate holding unit 13, generation of excessive impact can be suppressed, and the following effects can be obtained. · Fluctuations in the load generated in the substrate holding unit 13 can be suppressed. · Generation of backlash in the drive gear constituting the speed reducer that applies a rotational force to the rotation axis 12 can be suppressed. · Generation of torsion of the rotation axis 12 can be suppressed. · Deformation such as deflection in the substrate holding unit can be suppressed. · Fluctuations in the clearance between the components of the rotation support mechanism 10 can be suppressed. · Generation of displacement between the components of the rotation support mechanism 10 can be suppressed. · Movement of the substrate holding unit 13 that crosses the straight line RL extending in the vertical direction from the rotation axis 12 can be suppressed.

[0133] Therefore, it is possible to suppress a change in the distance between the backing plate 6 and the surface 11T of the glass substrate 11 when the substrate holding unit 13 is disposed at the film formation standing position. Further, it is possible to suppress a change in the distance between the substrate holding unit 13 and the mask 20, and it is possible to suppress the intrusion of the processing gas into the backside space 46 from the film formation port 20b. At the same time, in the plasma processing that needs to be set to a predetermined potential such as a floating potential, the glass substrate 11, the mask 20, etc. do not come into contact and conduct inadvertently, and the electrical state does not change. Thereby, it is possible to suppress fluctuations in the film formation conditions and improve processing characteristics such as the film formation thickness.

[0134] According to the present embodiment, when forming a film on the glass substrate 11 by sputtering, it is possible to prevent the glass substrate 11 to be processed from being damaged due to cracks, chips, etc. caused by the rotation operation of the substrate holding unit 13 by the rotation support mechanism 10. At the same time, the rotation support mechanism 10 can appropriately maintain the distance between the mask 20 and the glass substrate 11, maintain the potential state required for sputtering, and prevent deterioration of the film formation characteristics. At the same time, it is possible to prevent deterioration of the film formation characteristics by suppressing the generation of particles.

[0135] <Modification> In the surface treatment performed in the substrate processing apparatus 1 according to the above-described embodiment, the surface treatment was sputtering, but the surface treatment is not limited to sputtering. An evaporation process may be performed instead of the sputtering process. In this case, the above-described substrate processing unit has an evaporation source. In the above-described plasma chamber 4m, an evaporation process is performed.

[0136] The preferred embodiments and modifications of the present invention have been described above, and it should be understood that these are exemplary of the present invention and should not be considered as limiting. Additions, omissions, substitutions, and other changes can be made without departing from the scope of the present invention. Therefore, the present invention should not be regarded as being limited by the foregoing description.

Description of Reference Numerals

[0137] 1… Substrate processing apparatus (sputtering apparatus, film forming apparatus), 2… Load / Unload chamber (chamber), 2A… Load / Unload chamber (chamber), 3… Transfer chamber (transfer chamber, chamber), 3a… Transfer device, 4… Film forming chamber (chamber), 4a… Transfer port, 4A… Film forming chamber (chamber), 4b… Boundary position, 4d… Docking surface, 4g… Gas atmosphere setting mechanism, 4m… Plasma chamber (processing chamber), 4mt… Moving mechanism, 4n… Platen chamber (rear chamber), 4p… Power supply, 5… Cathode unit (substrate processing unit), 6… Backing plate (cathode electrode), 7… Target, 10… Rotation support mechanism (platen mechanism), 10mg… Non-contact stop portion, 11… Glass substrate (substrate), 11B… Back surface, 11T… Front surface, 12… Rotation axis, 12a… Base portion, 12A… Rotation drive unit, 12r… Axis line, 13… Substrate holding portion (platen), 13a… Tip, 14… Frame portion, 14a… Shaft arm portion, 14b… Window portion, 14f… Flange portion, 14r… Diameter arm portion, 15… Bolt (fastening member), 16a… First mounting plane, 16b… Second mounting plane, 17… Anti-sliding portion, 17a… Protrusion (first engaging portion), 17b… Recess (second engaging portion), 20… Mask, 20a… Mask frame, 20b… Film forming opening, 20g… Mask support portion, 40, 42… Opening, 41, 43… Connection end, 44… Internal space, 45… Front space, 46… Rear space, 50… Lift pin, Rr… Rotatable range

Claims

1. An apparatus for processing a substrate, comprising: a processing chamber having a substrate processing unit for performing a surface treatment on the substrate, and a film formation chamber composed of a back chamber adjacent to the processing chamber and supporting the substrate during the surface treatment in the processing chamber; a mask disposed in the back chamber, standing upright so as to face the processing chamber, and having a film formation opening; a rotating shaft rotatable about a rotation center, and a substrate holding unit attached to the rotating shaft and capable of supporting the substrate in the back chamber, the rotating support mechanism rotating the substrate holding unit supporting the substrate between a horizontal transfer position and a film formation upright position; and the back chamber has a transfer port through which the substrate passes in the transfer direction of the substrate; the internal space of the film formation chamber has a front space and a back space; the front space is a space where the film formation surface of the substrate is exposed through the film formation opening of the mask during the surface treatment; the back space is a space facing the back surface of the substrate during the surface treatment; the boundary position between the front space and the back space is arranged at a position closer to the transfer port in the transfer direction than the boundary position between the processing chamber and the back chamber; at the horizontal transfer position of the substrate, the substrate holding unit supports the substrate so as to face in the horizontal direction so that the substrate can be moved horizontally through the transfer port; at the film formation upright position of the substrate, the substrate holding unit supports the substrate so that the substrate faces the mask when the substrate is surface-treated; in the rotation direction of the substrate holding unit from the horizontal transfer position toward the film formation upright position, the position of the center of gravity of the substrate holding unit at the film formation upright position does not exceed a position directly above the rotation axis in the vertical direction; the rotating support mechanism includes: a base portion provided integrally with the rotating shaft; a flange portion provided integrally with the substrate holding unit; a fastening member passing through the flange portion and fastened to the base portion; and the base portion has a first mounting plane that abuts against the flange portion; the flange portion has a second mounting plane that abuts against the base portion; the first mounting plane is a plane along the axial direction of the rotating shaft and the tangential direction with respect to the outer peripheral surface of the rotating shaft; with the first mounting plane and the second mounting plane in contact, the substrate holding unit is fastened to the rotating shaft by the fastening member passing through the flange portion in a direction intersecting the second mounting plane; a substrate processing apparatus.

2. A first engaging portion is formed on the first mounting plane, a second engaging portion is formed on the second mounting plane, and the first engaging portion and the second engaging portion are engaged with each other in a state where the first mounting plane and the second mounting plane are in contact with each other. The substrate processing apparatus according to claim 1.

3. The rotation support mechanism has a non-contact stopping portion that stops the substrate holding portion at the film forming upright position in the rotational drive for rotating the substrate holding portion from the horizontal transfer position to the film forming upright position. The substrate processing apparatus according to claim 1.

4. The mask is disposed between the boundary position between the processing chamber and the back chamber and the substrate at the film forming upright position. The substrate processing apparatus according to claim 1.

5. The substrate processing unit faces the mask and protrudes from the boundary position between the processing chamber and the back chamber toward the back chamber. The substrate processing apparatus according to claim 1.

6. The substrate processing unit has a vapor deposition source, and vapor deposition processing is performed on the substrate in the front side space. The substrate processing apparatus according to claim 5.

7. The substrate processing unit has a cathode electrode, and sputtering processing is performed on the substrate in the front side space. The substrate processing apparatus according to claim 5.

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