Reaction chamber and oxidation device

Abstract

To provide a reaction chamber and an oxidation apparatus, capable of improving a quality of a silicon dioxide to be generated.SOLUTION: A reaction chamber comprises: a chamber main body 1; and an introducing pipe 12. A wafer mounting stage 11 is provided inside the chamber main body, a reaction region for housing a wafer is formed onto the wafer mounting stage. An upper surface of the reaction region is not lower than the upper surface of the wafer. A hole 13 is provided in a side wall of the chamber main body. The introducing pipe is provided inside the chamber main body, contains a pipe main body 121, is extended toward the reaction region so that a suction port 122 of the pipe main body is communicated to the hole, and an exhaust port 123 is used for transporting a plasma to the upper surface of the reaction region.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE The present disclosure relates to the semiconductor technology field, and more particularly to reaction chambers and oxidation devices. [Background technology]

[0002] In the wafer oxidation process, a mixture of oxygen and hydrogen gases (microwave plasma) is dissociated into a plasma rich in oxygen free radicals through a microwave plasma source, which then enters the reaction chamber and produces silicon dioxide on the wafer surface. The concentration and distribution of oxygen free radicals on the wafer surface directly affect the growth rate of silicon dioxide. Summary of the Invention [Problem to be solved by the invention]

[0003] The present disclosure provides a reaction chamber and an oxidation device. [Means for solving the problem]

[0004] According to one aspect of the present disclosure, there is provided a reaction chamber comprising a chamber body and a flow conduit.

[0005] A wafer mounting table is provided inside the chamber body, and a reaction region for accommodating the wafer is formed on the wafer mounting table, and an upper surface of the reaction region is not lower than an upper surface of the wafer. A hole is provided in a sidewall of the chamber body for transporting plasma into the chamber body.

[0006] The flow tube is provided inside the chamber body, and includes a tube body, an inlet port at one end of the tube body communicating with the hole, and an exhaust port at the other end extending toward the reaction region, and the exhaust port is used to transport the plasma to the upper surface of the reaction region so that the plasma reacts with the upper surface of the wafer.

[0007] According to another aspect of the present disclosure, a reaction chamber according to any of the embodiments of the present disclosure; An oxidation apparatus is provided, comprising: a plasma source provided outside the reaction chamber, the plasma output port of the plasma source communicating with the hole. [Effects of the Invention]

[0008] According to the embodiment of the present disclosure, a flow guide is provided between the hole and the wafer mounting table, so that the plasma that passes through the hole and enters the chamber body is transported via the flow guide and collected on the upper surface of the wafer, thereby preventing the plasma from diffusing to areas other than the upper surface of the wafer and increasing the concentration of plasma on the upper surface of the wafer, thereby increasing the growth rate of silicon dioxide generated on the upper surface of the wafer and improving the quality of the generated silicon dioxide.

[0009] It should be understood that the contents described in the Summary of the Invention are not intended to identify key or important features of the embodiments of the present disclosure, nor are they intended to limit the scope of the present disclosure. Other features of the present disclosure will be readily apparent from the following description.

[0010] These and other features, advantages, and aspects of the embodiments of the present disclosure will become more apparent from the following detailed description taken in conjunction with the drawings, in which like or similar reference numerals represent like or similar elements. [Brief explanation of the drawings]

[0011] [Figure 1] FIG. 1 is a schematic diagram showing the structure of a reaction chamber according to an embodiment of the present disclosure. [Figure 2] FIG. 1 is a schematic diagram showing the structure of a reaction chamber according to an embodiment of the present disclosure. [Figure 3] FIG. 1 is a schematic diagram showing the structure of a reaction chamber according to an embodiment of the present disclosure. [Figure 4] FIG. 2 is a schematic diagram illustrating the structure of a flow guide tube according to an embodiment of the present disclosure. [Figure 5] FIG. 2 is a schematic diagram illustrating the structure of a flow guide tube according to an embodiment of the present disclosure. [Figure 6] FIG. 2 is a schematic diagram illustrating the structure of a flow guide tube according to an embodiment of the present disclosure. [Figure 7] FIG. 2 is a schematic diagram illustrating the structure of a flow guide tube according to an embodiment of the present disclosure. [Figure 8] FIG. 1 is a schematic diagram showing the structure of an oxidation device according to an embodiment of the present disclosure. [Figure 9] FIG. 1 is a schematic diagram showing the structure of an oxidation device according to an embodiment of the present disclosure. [Figure 10] FIG. 1 is a schematic diagram showing the structure of an oxidation device according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0012]

[0023] Hereinafter, exemplary embodiments of the present disclosure will be described with reference to the drawings. Various details of the embodiments of the present disclosure will be included in the description to facilitate understanding, but these details should be considered merely as examples. Therefore, those skilled in the art should recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the present disclosure. Similarly, in the following description, descriptions of well-known functions and structures are omitted for clarity and conciseness.

[0013] An embodiment of the present disclosure provides a reaction chamber including a chamber body 1 and a flow guide pipe 12, as shown in FIGS.

[0014] A wafer mounting table 11 is provided inside the chamber body 1, and a reaction region 111 for accommodating a wafer is formed in the wafer mounting table 11, and the upper surface of the reaction region 111 is not lower than the upper surface of the wafer. A hole 13 is provided in the sidewall of the chamber body 1 to transport plasma into the chamber body 1.

[0015] The flow pipe 12 is disposed inside the chamber body 1 and includes a pipe body 121. An inlet port 122 at one end of the pipe body 121 communicates with the hole 13, and an outlet port 123 at the other end of the pipe body 121 extends toward the reaction region 111. The outlet port 123 is used to transport the plasma to the upper surface of the reaction region 111 so that the plasma can react with the upper surface of the wafer.

[0016] According to an embodiment of the present disclosure, the following is described.

[0017] 1 and 2 are top views of the reaction chamber, and the left-right and up-down directions of the reaction chamber in FIGS. 1 and 2 are both defined as the width direction of the chamber main body 1, and the front-to-back direction of the reaction chamber in FIGS. 1 and 2 is defined as the height direction of the chamber main body 1.

[0018] 3 is a side view of the reaction chamber, and the left-right direction of the reaction chamber in FIG. 3 is defined as the width direction of the chamber main body 1, and the up-down direction of the reaction chamber in FIG.

[0019] The interior of the chamber body 1 may be understood as a space surrounded by the inner wall of the chamber body 1 for carrying out the oxidation reaction of the wafer, and the shape and size of the interior of the chamber body 1 are not particularly limited here, as they can be selected or adjusted as needed. For example, the interior of the chamber body 1 may have a rectangular, cylindrical, or prismatic structure.

[0020] The position of the wafer mounting table 11 inside the chamber body 1 can be selected or adjusted as needed. For example, the wafer mounting table 11 may be arranged horizontally along the width direction of the chamber body 1, or may be arranged spatially below the hole 13 or approximately horizontally with the hole 13.

[0021] The arrangement of the wafer stage 11 in the chamber body 1 can be selected or adjusted as needed. For example, by providing the wafer stage 11 so that it can rotate within the chamber body 1, the plasma transported through the flow conduit 12 can be uniformly distributed over the top surface of the wafer. And / or by providing the wafer stage 11 so that it can move up and down within the chamber body 1, the height of the wafer stage 11 relative to the exhaust port 123 of the flow conduit 12 can be adjusted, and the plasma transported through the flow conduit 12 can be transported to the top surface of the wafer as completely as possible without leaking to areas other than the top surface of the wafer.

[0022] The reaction region 111 may be understood as a predetermined space located on the upper end surface of the wafer support pedestal 11, and this predetermined space can completely accommodate a wafer.

[0023] The wafer mounting table 11 is formed with a reaction region 111 for accommodating a wafer, and the upper surface of the reaction region 111 is not lower than the upper surface of the wafer. This may be understood as meaning that the outer edge of the reaction region 111 corresponds to the outer edge of the wafer, and the upper surface of the reaction region 111 corresponds to the upper surface of the wafer or is higher than the upper surface of the wafer. In other words, the reaction region 111 can completely surround the wafer.

[0024] A hole 13 is provided in the side wall of the chamber body 1. This may be understood as the hole 13 being provided at any position on any side wall of the chamber body 1. Here, the shapes and sizes of the hole 13, the plasma output port of the plasma source 2, and the exhaust port 123 are compatible with each other.

[0025] The inlet 122 and outlet 123 of the flow guide tube 12 are connected, and the plasma output port of the plasma source 2 transports the plasma to the reaction region 111 inside the chamber body 1 by passing it sequentially through the holes 13 in the side wall, the inlet 122 of the tube body 121, and the outlet 123 of the tube body 121.

[0026] An exhaust port 123 at the other end of the tube body 121 extends toward the reaction region 111, and the relative positions of the exhaust port 123 and the reaction region 111 can be selected or adjusted as needed. For example, the exhaust port 123 extends to a position where the lower edge of the exhaust port 123 is located above the upper surface of the reaction region 111 and the end face of the exhaust port 123 is located outside the edge of the reaction region 111. For example, the exhaust port 123 extends to a position where the lower edge of the exhaust port 123 is flush with the upper surface of the reaction region 111 and the end face of the exhaust port 123 is located outside the edge of the reaction region 111. For example, the exhaust port 123 extends to a position where the lower edge of the exhaust port 123 is located above the upper surface of the reaction region 111 and the end face of the exhaust port 123 is in contact with the edge of the reaction region 111. For example, the exhaust port 123 extends to a position where the lower edge of the exhaust port 123 is flush with the upper surface of the reaction region 111 and where the end face of the exhaust port 123 contacts the edge of the reaction region 111 .

[0027] The shape of the tube body 121 can be selected or adjusted as needed, for example, the size in the width direction of the chamber body 1 at the end of the tube body 121 closer to the exhaust port 123 is larger than the size in the width direction of the chamber body 1 at the end of the tube body 121 closer to the intake port 122, thereby making it easier for plasma to diffuse outward from the exhaust port 123 over a wider area.

[0028] The material of the flow conduit 12 can be selected or adjusted as needed. For example, the flow conduit 12 may be made of quartz so as not to adversely affect the quality of silicon dioxide produced during the reaction of the wafers.

[0029] When a wafer is subjected to an oxidation process, a mixture of reactive gases, oxygen and hydrogen, is dissociated into a plasma rich in oxygen free radicals by the plasma source 2, and the plasma is transported into the chamber body 1 through the flow pipe 12 and collected on the upper surface of the wafer, thereby producing a high-quality silicon dioxide film on the upper surface of the wafer.

[0030] According to an embodiment of the present disclosure, by providing flow guide pipe 12 communicating with hole 13 inside chamber body 1, the gap between hole 13 and the wafer is reduced, allowing plasma that enters chamber body 1 through hole 13 to be guided directly to the upper surface of the wafer via flow guide pipe 12, thereby preventing the plasma from diffusing and leaking to areas other than the upper surface of the wafer after entering chamber body 1 and reducing loss of plasma transported within chamber body 1. Furthermore, because the plasma is directly concentrated on the upper surface of the wafer, the plasma concentration on the upper surface of the wafer can be increased, further increasing the growth rate of a silicon dioxide thin film on the upper surface of the wafer.

[0031] In one example, the interior of the chamber body 1 may be a low pressure environment, and the internal pressure may be less than 20 Torr.

[0032] According to the embodiment of the present disclosure, in a reaction chamber with a low pressure environment, the plasma does not diffuse freely after entering the chamber body 1, and is therefore transported directly to the reaction region 111 through the flow guide 12. As a result, the plasma is concentrated on the upper surface of the wafer without diffusing to areas other than the upper surface of the wafer, thus increasing the plasma concentration on the upper surface of the wafer and increasing the growth rate of the silicon dioxide film on the upper surface of the wafer.

[0033] In one example, the process environment of the reaction chamber satisfies at least one of the following conditions, or any combination thereof: a process temperature of 600°C to 1200°C; a process pressure of less than 20 Torr; a gas flow rate of 1 SLM to 30 SLM; and a mixture of hydrogen gas and oxygen gas dissociated to form a plasma rich in oxygen free radicals (with a hydrogen content of less than 30%).

[0034] In one embodiment, the lower edge of exhaust port 123 is located above the upper surface of reaction region 111, and the end face of exhaust port 123 is located outside the edge of reaction region 111. In other words, the upper surface of reaction region 111 is located diagonally below the lower edge of exhaust port 123.

[0035] According to an embodiment of the present disclosure, the following is described.

[0036] The lower edge of the exhaust port 123 may be understood to be the edge of the exhaust port 123 that is closer to the reaction region 111 .

[0037] The end face of the exhaust port 123 may be understood to be a plane surrounded by the outer edge contour of the exhaust port 123 .

[0038] According to the embodiment of the present disclosure, by providing the exhaust port 123 at a position diagonally above the upper surface of the reaction region 111, the plasma enters the chamber body 1 through the flow guide 12 and is discharged directly to the upper surface of the reaction region 111 through the exhaust port 123, thereby preventing the plasma from diffusing to the bottom surface of the wafer or outside the wafer. Also, collision between the exhaust port 123 and the wafer is avoided.

[0039] In one embodiment, in the height direction of the chamber body 1, the vertical distance between the lower edge of the exhaust port 123 and the upper surface of the reaction area 111 is 2 mm to 5 mm, and in the width direction of the chamber body 1, the horizontal distance between the end face of the exhaust port 123 and the outer edge of the reaction area 111 is 2 mm to 5 mm.

[0040] According to the embodiment of the present disclosure, by providing the exhaust port 123 at a position diagonally above the upper surface of the reaction region 111, the plasma enters the chamber body 1 through the flow guide 12 and is discharged directly to the upper surface of the reaction region 111 through the exhaust port 123, thereby preventing the plasma from diffusing to the bottom surface of the wafer or outside the wafer. Also, collision between the exhaust port 123 and the wafer is avoided.

[0041] 4, the tube body 121 is a flexible tube body 121 that can expand and contract, and / or the exhaust port 123 is rotatably connected to the tube body 121.

[0042] According to an embodiment of the present disclosure, the following is described.

[0043] The extendable flexible tube body 121 may be understood as a portion of the tube body 121 between the intake port 122 and the exhaust port 123 whose length and bending posture can be adjusted as needed; for example, by pulling or bending the tube body 121, the exhaust port 123 can be made to face the wafer directly.

[0044] The exhaust port 123 is rotatably connected to the tube body 121, which may be understood to mean that the exhaust port 123 can pivot independently relative to the tube body 121, and the orientation of the exhaust port 123 can be adjusted.

[0045] According to the embodiment of the present disclosure, it is possible to adjust the relative positional relationship between the exhaust port 123 and the wafer, and it is possible to exhaust plasma directly onto the upper surface of the wafer from the exhaust port 123 of the flow guide tube 12 .

[0046] In one embodiment, as shown in FIGS. 1 to 3, the chamber body 1 is also provided with a wafer placement opening 14 for placing or removing a wafer.

[0047] In one embodiment, as shown in FIG. 1, the central axis of the hole 13 intersects with the central axis of the wafer mounting table 11, and the central axis of the hole 13 is parallel to the central axis of the end face of the exhaust port 123, which end face is parallel to the plane in which the hole 13 is located, and the edges on both sides of the exhaust port 123 in the width direction of the chamber body 1 are arranged symmetrically with respect to the central axis of the wafer mounting table 11.

[0048] According to an embodiment of the present disclosure, the following is described.

[0049] The end face of exhaust port 123 is parallel to the plane in which hole 13 is located. This may be understood as meaning that when hole 13 is an arc-shaped hole (each side of hole 13 is not in the same vertical plane), exhaust port 123 is an arc-shaped port. When hole 13 is a planar hole (each side of hole 13 is in the same vertical plane), exhaust port 123 may be understood as a planar port. Alternatively, hole 13 is a planar hole (each side of hole 13 is in the same vertical plane), and exhaust port 123 is an arc-shaped port (each side of exhaust port 123 is not in the same vertical plane, but the projection of each side of exhaust port 123 onto the vertical plane in which one side is located is parallel to the plane in which hole 13 is located).

[0050] The edges of the exhaust port 123 on both sides in the width direction of the chamber body 1 are arranged symmetrically with respect to the central axis of the wafer mounting table 11. This may also be understood as meaning that the cross-sectional shape of the exhaust port 123 is a bilaterally symmetrical figure, such as a circle, a square, or any other bilaterally symmetrical shape. In this way, the distances from both sides of the exhaust port 123 to the edges of the wafer mounting table 11 or the reaction region 111 are equal, ensuring that plasma is uniformly output from the exhaust port 123 to the upper surface of the wafer. Here, the width of the exhaust port 123 can be selected or adjusted as needed; for example, the width of the exhaust port 123 is equal to or greater than the width of the inlet port 122.

[0051] According to an embodiment of the present disclosure, by arranging the exhaust port 123 directly opposite the wafer, the area of ​​the plasma output from both the left and right sides of the exhaust port 123 becomes the same, and the plasma is output uniformly from the exhaust port 123 onto the top surface of the wafer, thereby improving the uniformity of silicon dioxide generation.

[0052] 1 and 5 , the central axis of hole 13 intersects the central axis of wafer mounting table 11 and is parallel to the central axis of the end face of exhaust port 123, which end face is parallel to the plane on which hole 13 is located, and both edge portions of exhaust port 123 in the width direction of chamber body 1 are arranged symmetrically with respect to the central axis of wafer mounting table 11. Tube body 121 has a structure that gradually expands axially symmetrically along its length, with the expanded end of tube body 121 forming exhaust port 123 and the reduced end of tube body 121 forming intake port 122, and the diameter of exhaust port 123 in the width direction of chamber body 1 being larger than the diameter of intake port 122 in the width direction of chamber body 1.

[0053] According to an embodiment of the present disclosure, the following is described.

[0054] The diameter of the exhaust port 123 in the width direction of the chamber body 1 is larger than the diameter of the intake port 122 in the width direction of the chamber body 1. This may be understood as the width of the exhaust port 123 being larger than the width of the intake port 122, the height of the exhaust port 123 being larger than the height of the intake port 122, and the end of the exhaust port 123 being a diffusion end with a larger diameter, or the width of the exhaust port 123 being larger than the width of the intake port 122, the height of the exhaust port 123 being equal to the height of the intake port 122, and the end of the exhaust port 123 being a flat diffusion end with a diameter and an equal height, or the width of the exhaust port 123 being larger than the width of the intake port 122, the height of the exhaust port 123 being smaller than the height of the intake port 122, and the end of the exhaust port 123 being a flat diffusion end with a diameter and a relatively small height.

[0055] According to an embodiment of the present disclosure, by increasing the width of the exhaust port 123, the plasma sprayed from the exhaust port 123 can cover a wider area of ​​the upper surface of the wafer, thereby contacting the upper surface of the wafer over a wider area and improving the plasma concentration on the upper surface of the wafer.

[0056] In one embodiment, as shown in FIG. 2, the central axis of the hole 13 is offset from the central axis of the wafer mounting table 11, and the end face of the exhaust port 123 is parallel to the height direction of the chamber body 1 and is inclined relative to the end face of the hole 13.

[0057] According to an embodiment of the present disclosure, the following is described.

[0058] The central axis of the hole 13 is offset from the central axis of the wafer mounting table 11. This may be understood as meaning that the hole 13 does not face the wafer mounting table 11, i.e., a part of the extending region of the hole 13 overlaps with the top region of the wafer mounting table 11, or the extending region of the hole 13 is not located outside the top region of the wafer mounting table 11.

[0059] The end face of the exhaust port 123 is parallel to the height direction of the chamber body 1. This may be understood as meaning that all sides of the exhaust port 123 are on the same vertical plane, and this vertical plane is parallel to the height of the chamber body 1. In other words, the plane on which the exhaust port 123 is located is perpendicular to the plane on which the wafer mounting table 11 is located.

[0060] The end face of the exhaust port 123 is inclined relative to the end face of the hole 13. This may be understood as meaning that the end face of the exhaust port 123 can rotate toward the center of the wafer mounting table 11 along an axis located in the height direction of the chamber body 1, and that after rotation, the end face of the exhaust port 123 is arranged at an angle relative to the end face of the hole 13.

[0061] According to an embodiment of the present disclosure, when the hole 13 in the chamber body 1 is located away from the center of the wafer mounting table 11, the exhaust port 123 is arranged at an angle, so that the plasma is guided to the upper surface of the wafer, and when the plasma is transported into the chamber body 1, it is not affected by the position of the hole 13 and is guided completely to the upper surface of the wafer without leaking to areas other than the upper surface of the wafer, thereby ensuring that a high concentration of plasma is concentrated on the upper surface of the wafer.

[0062] 2 , when the central axis of the hole 13 is on a first side of the central axis of the wafer mounting table 11, the end face of the exhaust port 123 is parallel to the height direction of the chamber body 1 and is inclined toward a second side with respect to the end face of the hole 13, where the second side is opposite the first side. Preferably, the plane of the left side of the exhaust port 123 intersects with the extension region of the top of the wafer mounting table 11, and the plane of the right side of the exhaust port 123 is in contact with the edge of the extension region of the top of the wafer mounting table 11. With this configuration, free diffusion of the plasma output from the right side of the exhaust port 123 is reduced.

[0063] 2 and 6 , the central axis of the hole 13 is offset from the central axis of the wafer mounting table 11, and the end face of the exhaust port 123 is parallel to the height direction of the chamber body 1 and is inclined relative to the end face of the hole 13. The tube body 121 has a structure that gradually expands asymmetrically along its length, with the expanded end of the tube body 121 forming the exhaust port 123 and the reduced end of the tube body 121 forming the intake port 122, and the diameter of the exhaust port 123 in the width direction of the chamber body 1 is larger than the diameter of the intake port 122 in the width direction of the chamber body 1. The tube wall of the tube body 121 on the side closer to the central axis of the wafer mounting table 11 is an arc-shaped tube wall that curves toward the central axis of the wafer mounting table 11. The wall of the pipe body 121 on the side away from the central axis of the wafer mounting table 11 is an arc-shaped or straight pipe wall, and if the pipe wall is an arc-shaped pipe wall, it curves toward the central axis of the wafer mounting table 11.

[0064] According to an embodiment of the present disclosure, the following is described.

[0065] The diameter of the exhaust port 123 in the width direction of the chamber body 1 is larger than the diameter of the intake port 122 in the width direction of the chamber body 1. This may be understood as the width of the exhaust port 123 being larger than the width of the intake port 122, the height of the exhaust port 123 being larger than the height of the intake port 122, and the end of the exhaust port 123 being a diffusion end with a larger diameter, or the width of the exhaust port 123 being larger than the width of the intake port 122, the height of the exhaust port 123 being equal to the height of the intake port 122, and the end of the exhaust port 123 being a flat diffusion end with a diameter and an equal height, or the width of the exhaust port 123 being larger than the width of the intake port 122, the height of the exhaust port 123 being smaller than the height of the intake port 122, and the end of the exhaust port 123 being a flat diffusion end with a diameter and a relatively small height.

[0066] According to an embodiment of the present disclosure, by increasing the width of the exhaust port 123, the plasma sprayed from the exhaust port 123 can cover a wider area of ​​the upper surface of the wafer, thereby contacting the upper surface of the wafer over a wider area and improving the plasma concentration on the upper surface of the wafer.

[0067] In one embodiment, as shown in FIG. 7, the diameter of the exhaust port 123 in the height direction of the chamber body 1 is smaller than the diameter of the intake port 122 in the height direction of the chamber body 1.

[0068] According to an embodiment of the present disclosure, by reducing the height of the exhaust port 123, the speed at which the plasma is output from the exhaust port 123 can be increased, and the plasma can be prevented from diffusing to areas other than the top surface of the wafer after being output from the exhaust port 123.

[0069] In one embodiment, the central axis of the hole 13 intersects the central axis of the wafer mounting table 11 and is parallel to the central axis of the end face of the exhaust port 123, which end face is parallel to the plane on which the hole 13 is located, and the edges on both sides of the exhaust port 123 in the width direction of the chamber body 1 are arranged symmetrically with respect to the central axis of the wafer mounting table 11. The tube body 121 has a structure that gradually expands axially symmetrically along its length, with the expanded end of the tube body 121 forming the exhaust port 123 and the reduced end of the tube body 121 forming the inlet port 122, and the diameter of the exhaust port 123 in the width direction of the chamber body 1 is larger than the diameter of the inlet port 122 in the width direction of the chamber body 1. The diameter of the exhaust port 123 in the height direction of the chamber body 1 is smaller than the diameter of the inlet port 122 in the height direction of the chamber body 1.

[0070] In one embodiment, the central axis of hole 13 is offset from the central axis of wafer mounting table 11, and the end face of exhaust port 123 is parallel to the height direction of chamber body 1 and is inclined relative to the end face of hole 13. Tube body 121 has a structure that gradually expands asymmetrically along its length, with the expanded end of tube body 121 forming exhaust port 123 and the reduced end of tube body 121 forming intake port 122, and the diameter of exhaust port 123 in the width direction of chamber body 1 is larger than the diameter of intake port 122 in the width direction of chamber body 1. The diameter of exhaust port 123 in the height direction of chamber body 1 is smaller than the diameter of intake port 122 in the height direction of chamber body 1.

[0071] In one embodiment, the diameter of the exhaust port 123 in the height direction of the chamber body 1 is smaller than the diameter of the intake port 122 in the height direction of the chamber body 1. The diameter of the exhaust port 123 in the width direction of the chamber body 1 is equal to the diameter of the intake port 122 in the width direction of the chamber body 1.

[0072] In one embodiment, as shown in FIG. 5, the exhaust port 123 may have a flat mouth shape and / or the intake port 122 may have a circular shape.

[0073] According to the embodiment of the present disclosure, the flat mouth-shaped exhaust port 123 is provided to increase the width of the exhaust port 123, which increases the area for outputting plasma in the cross section of the exhaust port 123, allowing the plasma to contact the upper surface of the wafer over a wider area, thereby improving the plasma concentration on the upper surface of the wafer. In addition, the circular inlet port 122 is more suitable for the circular plasma output port of the plasma source 2.

[0074] As shown in FIGS. 8 to 10, an embodiment of the present disclosure provides an oxidation apparatus including a plasma source 2 and a reaction chamber according to any of the above embodiments.

[0075] The plasma source 2 is provided outside the reaction chamber, and the plasma output port of the plasma source 2 communicates with the hole 13 .

[0076] According to an embodiment of the present disclosure, the following is described.

[0077] The plasma source 2 may be understood to be a plasma generator of any design known in the art.

[0078] According to an embodiment of the present disclosure, by providing flow guide pipes 12 communicating with holes 13 inside chamber body 1, the gap between holes 13 and the wafer is reduced. Plasma that passes through holes 13 and enters chamber body 1 can be guided directly to the upper surface of the wafer via flow guide pipes 12, thereby preventing the plasma from diffusing and leaking to areas other than the upper surface of the wafer after entering chamber body 1 and reducing loss of plasma transported within chamber body 1. Furthermore, because plasma is directly concentrated on the upper surface of the wafer, the plasma concentration on the upper surface of the wafer increases, thereby increasing the growth rate of a silicon dioxide thin film on the upper surface of the wafer.

[0079] In one example, an oxidation apparatus according to an embodiment of the present disclosure includes a plasma source 2 and a reaction chamber. A wafer mounting table 11 is provided inside a chamber body 1 of the reaction chamber. The wafer mounting table 11 defines a reaction region 111 for accommodating a wafer, and the upper surface of the reaction region 111 is not lower than the upper surface of the wafer. A hole 13 is provided in the sidewall of the chamber body 1, and the hole 13 is connected to the plasma output port of the plasma source 2. A flow conduit 12 of the reaction chamber is provided inside the chamber body 1. The flow conduit 12 includes a tube body 121. An inlet 122 at one end of the tube body 121 is connected to the hole 13. An outlet 123 at the other end of the tube body 121 extends toward the reaction region 111. The outlet 123 is used to transport the plasma to the upper surface of the reaction region 111 so that the plasma can react with the upper surface of the wafer.

[0080] In one example, the plasma source 2 of the oxidation apparatus is attached to the sidewall of the chamber body 1, the interior of the chamber body 1 is designed to be rectangular, the internal pressure of the chamber body 1 is less than 20 Torr, the outlet of the plasma source 2 is flush with the inner wall of the chamber body 1, the wafer is located at the center of the reaction chamber, there is a certain gap between the wafer and the outlet of the plasma source 2, ionized plasma flows from the outlet of the plasma source 2 through the gap to the upper surface (top surface) of the wafer for reaction, and some of the plasma flows along the gap to the lower surface of the wafer, thereby reducing the plasma concentration on the upper surface of the wafer. According to the oxidation apparatus of the present disclosure, a flow guide 12 is provided at the outlet of the generator of the plasma source 2, so that the plasma is guided directly to the surface of the wafer through the flow guide 12, thereby avoiding plasma wear and increasing the growth rate of the oxide film (silicon dioxide).

[0081] In the description of this specification, the orientations or positional relationships indicated by the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" are based on the directions or positional relationships shown in the drawings, and are merely for the purpose of facilitating and simplifying the description of the present disclosure, and are not intended to indicate or suggest that such devices or elements must have a specific orientation, be configured, or operate in a specific orientation, and are not to be understood as limiting the present disclosure.

[0082] Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying the relative importance or number of technical features depicted. Thus, features qualified as "first" and "second" can explicitly or implicitly include one or more of such features. In the description of this disclosure, unless expressly and specifically limited otherwise, "plurality" means two or more.

[0083] In this disclosure, unless otherwise clearly specified or limited, the terms "attach," "couple," "connect," "fixed," etc. may be interpreted broadly, for example, to mean a fixed connection, a detachable connection, or an integral one, a mechanical connection, an electrical connection, a communicative connection, a direct connection, an indirect connection via an intermediate medium, an internal communication between two elements, or an interactive relationship between two elements. Those skilled in the art will be able to understand the specific meanings of the above terms in this disclosure depending on the specific circumstances.

[0084] In this disclosure, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature can include direct contact between the first and second features, and can also include contact between the first and second features via an additional feature between them rather than direct contact. Furthermore, a first feature being "above," "above," and "above" a second feature means that the first feature is directly above and diagonally above the second feature, or simply that the horizontal height of the first feature is greater than the horizontal height of the second feature. A first feature being "below," "below," and "below" a second feature means that the first feature is directly below and diagonally below the second feature, or simply that the horizontal height of the first feature is less than the horizontal height of the second feature.

[0085] The above disclosure provides many different embodiments or examples for realizing different structures of the present disclosure. To simplify the disclosure of the present disclosure, specific example components and configurations have been described above. Of course, these are merely examples and are not intended to limit the present disclosure. Furthermore, the present disclosure may repeat reference numerals and / or characters in different examples; such repetition is for the sake of brevity and clarity and does not in itself indicate a relationship between the various implementations and / or configurations discussed.

[0086] The above specific embodiments do not limit the scope of protection of the present disclosure. It should be understood that those skilled in the art can make various modifications, combinations, subcombinations, substitutions, etc. according to design requirements and other factors. All modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present disclosure shall be included in the scope of protection of the present disclosure.

Claims

1. a chamber body having a wafer stage provided therein, the wafer stage having a reaction region formed therein for accommodating a wafer, the upper surface of the reaction region being not lower than the upper surface of the wafer, and a sidewall of the chamber body having a hole for transporting plasma into the chamber body; a flow guide tube provided inside the chamber body, the flow guide tube including a tube body having an inlet port at one end communicating with the hole and an exhaust port at the other end extending toward the reaction region for transporting the plasma to the upper surface of the reaction region so as to react the plasma with the upper surface of the wafer; The tube body is a flexible tube body that can be extended and retracted, and / or the exhaust port is rotatably connected to the tube body. A reaction chamber characterized by:

2. a lower edge of the exhaust port is located above the upper surface of the reaction region, and an end face of the exhaust port is located outside the edge of the reaction region; The reaction chamber of claim 1 .

3. a vertical distance between a lower edge of the exhaust port and an upper surface of the reaction region in a height direction of the chamber body is 2 mm to 5 mm; a horizontal distance between the end face of the exhaust port and the outer edge of the reaction region in the width direction of the chamber body is 2 mm to 5 mm; The reaction chamber of claim 2 .

4. 2. The reaction chamber according to claim 1, wherein the flow pipe is made of quartz.

5. A reaction chamber according to any one of claims 1 to 4; a plasma source provided outside the reaction chamber, the plasma output port of the plasma source communicating with the hole; An oxidation device characterized by:

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