Vacuum processing apparatus, particle removal mechanism, and particle removal method

Abstract

According to the present invention, particles are inhibited from infiltrating a vacuum processing device. To achieve the abovementioned purpose, a vacuum processing device according to one mode of the present invention comprises a vacuum vessel, a charged particle generation source, an exhaust mechanism, and a particle removal mechanism. Charged particles are generated inside the charged particle generation source. The exhaust mechanism exhausts gas that is inside the vacuum vessel. The particle removal mechanism includes an intermediate tank that is disposed between the vacuum vessel and the charged particle generation source and that connects the vacuum vessel and the charged particle generation source, and the particles generated by the charged particle generation source are discharged using a gas stream to outside the intermediate tank in front of the vacuum vessel.

Description

Technical Field

[0001] The present invention relates to a vacuum processing apparatus, a particle removing mechanism, and a particle removing method.

Background Art

[0002] In a vacuum processing apparatus typified by a film forming apparatus, a charge removing device for removing charges from a substrate to be vacuum processed or a stage supporting the substrate may be attached (see, for example, Patent Document 1). From the charge removing device, charges having a polarity opposite to the charging potential of the charged substrate or stage are irradiated. Thereby, the charging of the substrate or stage is eliminated.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the charge removing device, electrode components provided inside the charge removing device may be etched by charged particles generated inside. In such a case, the etched portion of the electrode component becomes particles (foreign matter), and the particles may fly into the vacuum processing apparatus. When the particles fly into the vacuum processing apparatus, for example, the particles enter the film formed on the substrate during the film forming process, reducing the yield of the film forming process. Such particle generation is not limited to the charge removing device, but can also occur in other accessory devices, such as a vacuum gauge such as an ionization vacuum gauge.

[0005] In view of the above circumstances, an object of the present invention is to provide a vacuum processing apparatus, a particle removing mechanism, and a particle removing method that suppress the intrusion of particles from a charge particle generation source such as a charge removing device and an ionization vacuum gauge into the vacuum processing apparatus.

Means for Solving the Problem

[0006] To achieve the above object, a vacuum processing apparatus according to one embodiment of the present invention includes a vacuum chamber, a charged particle generation source, an exhaust mechanism, and a particle removal mechanism. In the charged particle generation source, charged particles are generated inside. The exhaust mechanism exhausts the gas in the vacuum chamber. The particle removal mechanism includes an intermediate chamber disposed between the vacuum chamber and the charged particle generation source and connecting the vacuum chamber and the charged particle generation source, and discharges particles generated in the charged particle generation source outside the intermediate chamber in front of the vacuum chamber by a gas flow.

[0007] With such a vacuum processing apparatus, the intrusion of particles from the charged particle generation source into the vacuum processing apparatus is suppressed.

[0008] In the above vacuum processing apparatus, the charged particle generation source further includes a first gas supply source that supplies a first gas serving as a raw material for the charged particles generated in the charged particle generation source to the charged particle generation source, the particle removal mechanism further includes a second gas supply source that supplies a second gas serving as a raw material for the gas flow to the intermediate chamber, and a discharge mechanism that discharges the second gas and the particles outside the intermediate chamber, the exhaust mechanism exhausts the first gas supplied to the charged particle generation source through the intermediate chamber and the vacuum chamber, When the first gas is exhausted by the exhaust mechanism and the second gas and the particles are exhausted by the discharge mechanism, the flow rate Q2 of the second gas in the intermediate chamber may be set to be larger than the flow rate Q1 of the first gas in the intermediate chamber.

[0009] With such a vacuum processing apparatus, the intrusion of particles from the charged particle generation source into the vacuum processing apparatus is more reliably suppressed.

[0010] In the above-described vacuum processing apparatus, the gas flow may flow in a second direction that intersects a first direction from the charged particle generation source toward the vacuum vessel in the intermediate tank.

[0011] With such a vacuum processing apparatus, the intrusion of particles from the charged particle generation source into the vacuum processing apparatus is more reliably suppressed.

[0012] In the above-described vacuum processing apparatus, the particle removal mechanism includes a plurality of gas supply lines that supply the second gas to the intermediate tank, and the plurality of gas supply lines may be arranged in parallel in a third direction that intersects the first direction and the second direction.

[0013] With such a vacuum processing apparatus, the intrusion of particles from the charged particle generation source into the vacuum processing apparatus is more reliably suppressed.

[0014] A particle removal mechanism according to an aspect of the present invention is disposed between a vacuum vessel and a charged particle generation source, includes an intermediate tank that connects the vacuum vessel and the charged particle generation source, and discharges particles generated by the charged particle generation source outside the intermediate tank in front of the vacuum vessel by a gas flow.

[0015] With such a particle removal mechanism, the intrusion of particles from the charged particle generation source into the vacuum processing apparatus is suppressed.

[0016] In the particle removal mechanism, the charged particle generation source further includes a first gas supply source that supplies a first gas, which is a raw material for the charged particles generated in the charged particle generation source, to the charged particle generation source, the particle removal mechanism further includes a second gas supply source that supplies a second gas, which is a raw material for the gas flow, to the intermediate tank, and a discharge mechanism that discharges the second gas and the particles outside the intermediate tank. The vacuum container is provided with an exhaust mechanism for exhausting the gas inside the vacuum container. The exhaust mechanism exhausts the first gas supplied to the charged particle generation source through the intermediate tank and the vacuum container. When the first gas is exhausted by the exhaust mechanism and the second gas and the particles are exhausted by the discharge mechanism, the flow rate Q2 of the second gas in the intermediate tank may be set to be larger than the flow rate Q1 of the first gas in the intermediate tank.

[0017] With such a particle removal mechanism, the intrusion of particles from the charged particle generation source into the vacuum processing apparatus is more reliably suppressed.

[0018] In the particle removal mechanism, The gas flow may flow in a second direction intersecting the first direction from the charged particle generation source toward the vacuum container in the intermediate tank.

[0019] With such a particle removal mechanism, the intrusion of particles from the charged particle generation source into the vacuum processing apparatus is more reliably suppressed.

[0020] In the particle removal mechanism, It includes a plurality of gas supply lines for supplying the second gas to the intermediate tank. The plurality of gas supply lines may be arranged in parallel in a third direction intersecting the first direction and the second direction.

[0021] With such a particle removal mechanism, the intrusion of particles from the charged particle generation source into the vacuum processing apparatus is more reliably suppressed.

[0022] A particle removal method according to an aspect of the present invention is disposed between a vacuum container and a charged particle generation source, and uses an intermediate tank connecting the vacuum container and the charged particle generation source. The particles generated by the charged particle generation source are discharged outside the intermediate tank in front of the vacuum container by a gas flow.

[0023] With such a particle removal method, the intrusion of particles from the charged particle generation source into the vacuum processing apparatus is suppressed.

[0024] In the above particle removal method, The charged particle generation source further includes a first gas supply source that supplies a first gas, which is a raw material for the charged particles generated in the charged particle generation source, to the charged particle generation source. The particle removal mechanism further includes a second gas supply source that supplies a second gas, which is a raw material for the gas flow, to the intermediate tank, and a discharge mechanism that discharges the second gas and the particles out of the intermediate tank. An exhaust mechanism for exhausting the gas in the vacuum container is provided in the vacuum container. The first gas supplied to the charged particle generation source by the exhaust mechanism is exhausted through the intermediate tank and the vacuum container. When the first gas is exhausted by the exhaust mechanism and the second gas and the particles are discharged by the discharge mechanism, the flow rate Q2 of the second gas in the intermediate tank may be set to be larger than the flow rate Q1 of the first gas in the intermediate tank.

[0025] With such a particle removal method, the intrusion of particles from the charged particle generation source into the vacuum processing apparatus is suppressed.

[0026] In the above particle removal method, The gas flow may be caused to flow in a second direction that intersects a first direction from the charged particle generation source toward the vacuum container in the intermediate tank.

[0027] With such a particle removal method, the intrusion of particles from the charged particle generation source into the vacuum processing apparatus is suppressed.

[0028] In the above particle removal method, The particle removal mechanism includes a plurality of gas supply lines for supplying the second gas to the intermediate tank. The plurality of gas supply lines may be arranged in parallel in a third direction intersecting the first direction and the second direction.

[0029] With such a particle removal method, the intrusion of particles from the charged particle generation source into the vacuum processing apparatus is suppressed.

Effect of the Invention

[0030] As described above, according to the present invention, there are provided a vacuum processing apparatus, a particle removal mechanism, and a particle removal method for suppressing the intrusion of particles from a charged particle generation source into the vacuum processing apparatus.

Brief Description of the Drawings

[0031]

Figure 1

Figure 2

Figure 3

Modes for Carrying Out the Invention

[0032] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In each drawing, XYZ axis coordinates may be introduced. Also, the same members or members having the same function may be given the same reference numerals, and the description may be omitted as appropriate after the description of such members. Further, the numerical values shown below are examples and are not limited to this example.

[0033] FIG. 1(a) is a schematic cross-sectional view showing the vacuum processing apparatus of the present embodiment. FIG. 1(b) is a schematic cross-sectional view showing the A1-A2 cross-sectional portion of FIG. 1(a).

[0034] As shown in Fig. 1(a), the vacuum processing apparatus 1 includes a vacuum chamber 10, a charged particle generation source 20, a particle removal mechanism 30, and an exhaust mechanism 40. Inside the vacuum chamber 10, a stage 101 for supporting a substrate 102 is provided. The gas inside the vacuum chamber 10 is exhausted by the exhaust mechanism 40. The exhaust mechanism 40 includes a vacuum pump such as a turbo pump.

[0035] The vacuum chamber 10 is a container capable of maintaining a reduced pressure state. For example, when the vacuum processing apparatus 1 is a sputtering apparatus, a film formation source (sputtering target), not shown, is provided inside the vacuum chamber 10 so as to face the stage 101. Further, the vacuum processing apparatus 1 includes a gas supply mechanism (not shown) for supplying a discharge gas, a discharge power source (not shown), and the like. The vacuum processing apparatus 1 is not limited to a sputtering apparatus, and may be a CVD apparatus, an etching apparatus, an ion milling apparatus, an ion implantation apparatus, or a roll-to-roll film formation apparatus.

[0036] The charged particle generation source 20 is, for example, a static eliminator. The charged particle generation source 20 has a main body portion 201, a gas supply source 202 (first gas supply source), and a discharge power source 203. A gas (first gas) serving as a raw material for charged particles (positive ions, negative ions, electrons) is supplied from the gas supply source 202 to the main body portion 201. Then, when discharge power is applied from the discharge power source 203, charged particles are generated inside the main body portion 201. The first gas is, for example, a noble gas such as Ar or Xe, or N2. Examples of the discharge power source 203 include an RF power source and a microwave power source.

[0037] The gas supplied to the charged particle generation source 20 is exhausted by the exhaust mechanism 40 through the intermediate tank 303 of the particle removal mechanism 30 and the vacuum chamber 10. The charged particle generation source 20 is not limited to a static eliminator, and may be an ion source used in ion implantation, ion milling, surface treatment, or the like, or a pressure gauge represented by an ionization vacuum gauge.

[0038] In the charged particle generation source 20, charged particles generated inside may be accelerated inside and collide with electrode components provided inside. In such a case, the electrode components may be etched, and the etched portions of the electrode components may become particles (foreign substances), and these particles may fly into the vacuum chamber 10. When the particles fly into the vacuum chamber 10, for example, the particles may enter the film formed on the substrate 102 during the film formation process, reducing the yield of the product including this film. Therefore, it is desirable to eliminate such particles as much as possible in front of the vacuum chamber 10.

[0039] The particle removal mechanism 30 includes a gas supply source 301 (second gas supply source), a gas supply line 302, an intermediate tank 303, a discharge line 304, a filter 305, and a discharge mechanism 306. The gas supply source 301, the gas supply line 302, the intermediate tank 303, the discharge line 304, the filter 305, and the discharge mechanism 306 are arranged in series.

[0040] The gas supply source 301 supplies a gas (second gas) that is the raw material of the gas flow to the intermediate tank 303 via the gas supply line 302. The second gas is, for example, Ar, N2, or the like. The gas supply line 302 is arranged between the gas supply source 301 and the intermediate tank 303. The gas supply line 302 connects the gas supply source 301 and the intermediate tank 303. The intermediate tank 303 is arranged between the vacuum chamber 10 and the charged particle generation source 20. The intermediate tank 303 connects the vacuum chamber 10 and the charged particle generation source 20. The outer shape of the intermediate tank 303 as viewed from the vacuum chamber 10 shown in FIG. 1(b) is rectangular, but it may also be circular or elliptical.

[0041] The discharge line 304 is disposed between the intermediate tank 303 and the filter 305. The discharge line 304 connects the intermediate tank 303 and the filter 305. The filter 305 is disposed between the discharge line 304 and the discharge mechanism 306. The discharge mechanism 306 includes a vacuum pump such as a turbo pump, and discharges the second gas and particles outside the intermediate tank 303 through the discharge line 304. Further, the exhaust speed S2 of the discharge mechanism 306 is faster than the exhaust speed S1 of the exhaust mechanism 40.

[0042] The particle removal mechanism 30 discharges the particles generated by the charged particle generation source 20 outside the intermediate tank 303 in front of the vacuum vessel 10 by the gas flow. The particles generated by the charged particle generation source 20 are transported from the intermediate tank 303 to the outside of the intermediate tank 303 by the particle removal mechanism 30, and the intrusion of particles into the vacuum vessel 10 is suppressed.

[0043] Also, as shown in FIG. 1(b), the particle removal mechanism 30 includes a plurality of gas supply lines 302a to 302d that supply the second gas to the intermediate tank 303. The reference numeral 205 shown in FIG. 1(b) is an example of the communication hole 205 through which the charged particle generation source 20 and the intermediate tank 303 are connected. Here, the direction from the charged particle generation source 20 toward the vacuum vessel 10 is defined as the first direction (X-axis direction), the direction intersecting the first direction is defined as the second direction (±Z-axis direction), and the direction intersecting each of the first direction and the second direction is defined as the third direction (±Y-axis direction). "Intersect" means, for example, orthogonal. Also, the second direction may be perpendicular to the floor surface on which the vacuum processing apparatus 1 is installed, may be horizontal, or may be oblique.

[0044] The plurality of gas supply lines 302a to 302d are arranged in parallel in the third direction. The plurality of gas supply lines 302a to 302d may be branched in the middle of the gas supply line 302 and reach the intermediate tank 303, or may be branched from the gas supply source 301 and reach the intermediate tank 303. Note that the number of the plurality of gas supply lines is not limited to the illustrated number. This number is appropriately changed according to the width of the intermediate tank 303 in the second direction.

[0045] The operation of the particle removal mechanism 30 will be described. FIGS. 2(a) and (b) are schematic cross-sectional views showing the operation of the vacuum processing apparatus of the present embodiment. FIG. 2(b) corresponds to the cross-sectional portion A1-A2 of FIG. 1(a).

[0046] When the substrate 102 or the stage 101 in the vacuum chamber 10 is positively or negatively charged, charged particles 220 of the opposite polarity are irradiated from the charged particle generation source 20 toward the substrate 102. Thereby, the charging of the substrate 102 or the stage 101 can be eliminated. At this time, when particles 210 are generated in the charged particle generation source 20, the particles 210 may fly from the charged particle generation source 20 toward the vacuum chamber 10.

[0047] However, in the vacuum processing apparatus 1, the particle removal mechanism 30 forms a gas flow 310 that flows in the second direction (from the side of the gas supply line 302 toward the side of the discharge line 304) in the intermediate tank 302. Thereby, even if the particles 210 fly from the charged particle generation source 20 to the intermediate tank 303, the particles 210 ride on the flow of the gas flow 310 in front of the vacuum chamber 10 and are discharged to the discharge line 304 together with the gas flow 310. Thereafter, the particles 210 are captured by the filter 305, and the gas flow 310 that has passed through the filter 305 is exhausted by the exhaust mechanism 306.

[0048] When the first gas is exhausted by the exhaust mechanism 40 and the second gas and the particles 210 are exhausted by the exhaust mechanism 306, the flow rate Q2 of the second gas in the intermediate tank 303 is set to be larger than the flow rate Q1 of the first gas in the intermediate tank 303. Thereby, the gas flow of the second gas becomes stronger than the gas flow of the first gas, and the particles 210 are surely transported in the direction from the side of the gas supply line 302 toward the side of the discharge line 304 rather than in the direction from the charged particle generation source 20 toward the vacuum chamber 10 by the gas flow 310.

[0049] Further, as shown in FIG. 2(a), the gas supply lines 302a to 302d are arranged in parallel in the third direction. As a result, the gas flows 310 flowing from the gas supply lines 302a to 302d into the intermediate tank 303 are combined in the third direction, and an air curtain 320 is formed in the intermediate tank 303 by the gas flow 310. The air curtain 320 overlaps the communication hole 205 in the first direction, and its area is larger than the area of the communication hole 205. When such an air curtain 320 is formed in the intermediate tank 303, the air curtain 320 serves as a barrier for the particles 210, and the particles 210 cannot enter the vacuum chamber 10. As a result, the intrusion of the particles 210 into the vacuum chamber 10 is surely suppressed.

[0050] The vacuum processing apparatus 1 is used as follows. For example, the discharge mechanism 306 is operated, and the second gas is introduced into the intermediate tank 303 by the gas supply source 301. As a result, a gas flow by the second gas is formed in the intermediate tank 303. Next, the first gas is introduced into the main body 201 by the gas supply source 202 of the charged particle generation source 20, and the discharge power supply 203 is operated. As a result, the static elimination of the stage 101 is started.

[0051] At this time, since the air curtain 320 is already formed in the intermediate tank 303, the intrusion of the particles 210 into the vacuum chamber 10 is suppressed. Subsequently, the substrate 102 is placed on the stage 101. At this time, the introduction of the first gas into the main body 201 and the operation of the discharge power supply 203 do not necessarily have to be stopped.

[0052] Next, the introduction of the first gas into the main body 201 and the operation of the discharge power supply 203, and the operation of the discharge mechanism 306 and the introduction of the second gas into the intermediate tank 303 are stopped, and the process treatment of the substrate 102 is performed. The process treatment is, for example, film formation such as sputtering or CVD, etching, or ion milling. Even during the process treatment, if static elimination of the stage 101 is necessary, the introduction of the first gas into the main body 201 and the operation of the discharge power supply 203, and the operation of the discharge mechanism 306 and the introduction of the second gas into the intermediate tank 303 may be performed.

[0053] After the process treatment of the substrate 102 is completed, the discharge mechanism 306 is operated, and after the second gas is introduced into the intermediate tank 303, the first gas is introduced into the main body 201 and the discharge power supply 203 is operated to start the static elimination of the substrate 102 or the stage 101. After that, the substrate 102 is carried out from the vacuum chamber 10. After the substrate 102 is carried out, the static elimination of the stage 101 may continue for a predetermined time. Next, the introduction of the first gas into the main body 201, the operation of the discharge power supply 203, the operation of the discharge mechanism 306, and the introduction of the second gas into the intermediate tank 303 are stopped.

[0054] FIG. 3 is a schematic cross-sectional view showing a modified example of the vacuum processing apparatus of the present embodiment.

[0055] The discharge line 304 is not limited to one, and may have a plurality of discharge lines 304a to 304d. For example, the plurality of discharge lines 304a to 304d are arranged in parallel in the third direction at the same pitch as the gas supply lines 302a to 302d. The plurality of discharge lines 304a to 304d may be bundled into one in the middle of the discharge line 304 and reach the filter 305, or may reach the filter 305 while being branched from the intermediate tank 303 to the filter 305.

[0056] With such a configuration, the gas flow 310 flowing into the intermediate tank 303 from each of the gas supply lines 302a to 302d travels substantially linearly in the intermediate tank 303 and is discharged to the discharge line facing each of the gas supply lines 302a to 302d. As a result, an air curtain 320 with more suppressed turbulent flow is formed in the intermediate tank 303.

[0057] As described above, embodiments of the present invention have been explained. However, the present invention is not limited to the above-described embodiments, and it goes without saying that various modifications can be made. Each embodiment is not necessarily an independent form, and can be combined as much as technically possible. For example, in the present invention, in addition to the vacuum processing apparatus 1 including the particle removal mechanism 30, a particle removal mechanism 30 incorporated in the vacuum processing apparatus 1 is provided. Furthermore, a particle removal method using the particle removal mechanism 30 is provided.

[0058] For example, a particle removal method is provided in which, using the above-described intermediate tank 303, particles 210 generated by the charged particle generation source 20 are discharged outside the intermediate tank 303 in front of the vacuum vessel 10 by a gas flow 310.

[0059] Here, the first gas supplied to the charged particle generation source 20 by the exhaust mechanism 40 is exhausted through the intermediate tank 303 and the vacuum vessel 10. When the first gas is exhausted by the exhaust mechanism 40 and the second gas and the particles 210 are exhausted by the discharge mechanism 306, the flow rate Q2 of the second gas in the intermediate tank 303 is set to be larger than the flow rate Q1 of the first gas in the intermediate tank 303. Then, by flowing the gas flow 310 in a second direction that intersects the first direction from the charged particle generation source 20 to the vacuum vessel 10 in the intermediate tank 303, the particles are surely removed.

Explanation of Reference Numerals

[0060] 1... Vacuum processing apparatus 10... Vacuum vessel 20... Charged particle generation source 30... Particle removal mechanism 40... Exhaust mechanism 101... Stage 102... Substrate 201... Main body part 202... Gas supply source 203... Discharge power source 205... Communication hole 210... Particles 220... Charged particles 301... Gas supply source 302, 302a to 302d... Gas supply lines 303... Intermediate tank 304... Discharge line 305... Filter 306... Discharge mechanism 310... Gas flow 320... Air curtain

Claims

1. A vacuum vessel, a charged particle generation source that generates charged particles inside, an exhaust mechanism for exhausting the gas inside the vacuum vessel, including an intermediate tank disposed between the vacuum vessel and the charged particle generation source and connecting the vacuum vessel and the charged particle generation source, and a particle removal mechanism for discharging the particles generated by the charged particle generation source outside the intermediate tank in front of the vacuum vessel by a gas flow, A vacuum processing apparatus comprising: The charged particle generation source includes a first gas supply source that supplies a first gas, which is a raw material for the charged particles generated inside the charged particle generation source, to the charged particle generation source, The particle removal mechanism further includes a second gas supply source that supplies a second gas, which is a raw material for the gas flow, to the intermediate tank, a plurality of gas supply lines that supply the second gas to the intermediate tank, and a discharge mechanism that discharges the second gas and the particles outside the intermediate tank, The exhaust mechanism exhausts the first gas supplied to the charged particle generation source through the intermediate tank and the vacuum vessel, When the first gas is exhausted by the exhaust mechanism and the second gas and the particles are exhausted by the discharge mechanism, the flow rate Q2 of the second gas in the intermediate tank is greater than the flow rate Q1 of the first gas in the intermediate tank, The gas flow flows in a second direction that intersects a first direction from the charged particle generation source toward the vacuum vessel in the intermediate tank, The plurality of gas supply lines are arranged in parallel in a third direction that intersects the first direction and the second direction Vacuum processing apparatus.

2. A particle removal mechanism disposed between a vacuum vessel and a charged particle generation source, including an intermediate tank that connects the vacuum vessel and the charged particle generation source, and for discharging the particles generated by the charged particle generation source outside the intermediate tank in front of the vacuum vessel by a gas flow, The charged particle generation source includes a first gas supply source that supplies a first gas, which is a raw material for the charged particles generated inside the charged particle generation source, to the charged particle generation source, The particle removal mechanism further includes a second gas supply source that supplies a second gas, which is a raw material for the gas flow, to the intermediate tank, a plurality of gas supply lines that supply the second gas to the intermediate tank, and a discharge mechanism that discharges the second gas and the particles outside the intermediate tank, An exhaust mechanism for exhausting the gas inside the vacuum vessel is provided in the vacuum vessel, The exhaust mechanism exhausts the first gas supplied to the charged particle generation source through the intermediate tank and the vacuum vessel. When the first gas is exhausted by the exhaust mechanism and the second gas and the particles are exhausted by the discharge mechanism, the flow rate Q2 of the second gas in the intermediate tank is set to be larger than the flow rate Q1 of the first gas in the intermediate tank. The gas flow flows in a second direction intersecting with a first direction from the charged particle generation source to the vacuum vessel in the intermediate tank. The plurality of gas supply lines are arranged in parallel in a third direction intersecting with the first direction and the second direction. Particle removal mechanism.

3. A particle removal method using a particle removal mechanism including an intermediate tank disposed between a vacuum vessel and a charged particle generation source and connecting the vacuum vessel and the charged particle generation source, wherein particles generated by the charged particle generation source are discharged outside the intermediate tank in front of the vacuum vessel by a gas flow, The charged particle generation source includes a first gas supply source that supplies a first gas serving as a raw material for the charged particles generated in the charged particle generation source to the charged particle generation source. The particle removal mechanism further includes a second gas supply source that supplies a second gas serving as a raw material for the gas flow to the intermediate tank, a plurality of gas supply lines that supply the second gas to the intermediate tank, and a discharge mechanism that discharges the second gas and the particles outside the intermediate tank. An exhaust mechanism for exhausting the gas in the vacuum vessel is provided in the vacuum vessel. The exhaust mechanism exhausts the first gas supplied to the charged particle generation source through the intermediate tank and the vacuum vessel. When the first gas is exhausted by the exhaust mechanism and the second gas and the particles are exhausted by the discharge mechanism, the flow rate Q2 of the second gas in the intermediate tank is set to be larger than the flow rate Q1 of the first gas in the intermediate tank. The gas flow is caused to flow in a second direction intersecting with a first direction from the charged particle generation source to the vacuum vessel in the intermediate tank. The plurality of gas supply lines are arranged in parallel in a third direction intersecting with the first direction and the second direction. Particle removal method.

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