High-frequency module

Abstract

To prevent short-circuiting between an electrode and conductive paste on an upper surface of a semiconductor device caused by electromigration.SOLUTION: A semiconductor device S1 has an upper surface S1a provided with an electrode E1. A semiconductor device mounting part 5 is in contact with a bottom surface S1b of the semiconductor device S1 and an upper surface 4a of a conductive paste coated part 4. Conductive paste 2 is provided between the bottom surface S1b of the semiconductor device S1 and the upper surface 4a of the conductive paste coated part 4. In plan view, the semiconductor device mounting part 5 is smaller in size than the bottom surface S1b of the semiconductor device S1 and the upper surface 4a of the conductive paste coated part 4. The upper surface 4a of the conductive paste coated part 4 is smaller in size than the bottom surface S1b of the semiconductor device S1. The conductive paste 2 comes into contact with the semiconductor device S1 only at a portion on the bottom surface S1b of the semiconductor device S1.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a high-frequency module in which a semiconductor element is fixed by a conductive paste.

Background Art

[0002] When joining a plate-shaped semiconductor element to a substrate, a conductive paste is often used. First, a certain amount of conductive paste is applied to the substrate. Next, in the mounting process, the semiconductor element is provided on the conductive paste so as to contact the conductive paste, and pressure is applied to the semiconductor element. Next, the conductive paste is heated for a certain period of time so that the conductive paste hardens. The heating is performed based on the temperature at which the conductive paste hardens. Thereby, the semiconductor element is joined to the substrate.

[0003] In the above-described mounting process, the conductive paste that cannot fit in the region between the semiconductor element and the substrate protrudes from the region. As a result, a fillet made of the conductive paste is formed on the side surface of the semiconductor element. In recent years, various configurations have been devised to prevent a fillet made of a conductive paste from being formed on the upper part of the side surface of the semiconductor element.

[0004] For example, Patent Document 1 discloses a configuration (hereinafter also referred to as "related configuration A") for reducing the volume of a fillet formed on the side surface of a semiconductor element. In related configuration A, a plate-shaped semiconductor element as an electronic component is attached to the upper surface of a plate-shaped mounting portion provided on the surface of a substrate by a conductive paste. The area of the upper surface of the mounting portion is smaller than the area of the bottom surface of the semiconductor element.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] In related configuration A, the volume of the fillet made of conductive paste formed on the side surface of the plate-shaped semiconductor element is reduced. However, in related configuration A, the fillet formed on the side surface of the plate-shaped semiconductor element cannot be completely eliminated.

[0007] Some plate-shaped semiconductor elements have electrodes provided on the upper surface of the semiconductor element. Here, it is assumed that a voltage is applied such that the current density in the fillet becomes high in a state where a fillet is formed on the side surface of the semiconductor element having an electrode on the upper surface. In this case, there is a problem that a defect due to electromigration occurs between the conductive paste constituting the fillet and the electrode on the upper surface of the semiconductor element. The defect is, for example, a short circuit between the conductive paste constituting the fillet and the electrode on the upper surface of the semiconductor element.

[0008] The present disclosure has been made to solve such problems, and an object thereof is to provide a high-frequency module capable of suppressing the occurrence of a short circuit between the electrode on the upper surface of the semiconductor element and the conductive paste due to electromigration.

Means for Solving the Problems

[0009] In order to achieve the above object, in a high-frequency module according to an aspect of the present disclosure, a plate-shaped semiconductor element is fixed by a conductive paste. The semiconductor element has a first upper surface provided with a first electrode and a first bottom surface provided with a second electrode. The high-frequency module includes a substrate having a second upper surface, and a plate-shaped member having a third upper surface on which the conductive paste is provided, and a conductive paste application portion fixed to the second upper surface of the substrate. A semiconductor element provided above the third upper surface of the conductive paste application portion, and a member having a fourth upper surface that supports the semiconductor element, and a semiconductor element mounting portion provided between the first bottom surface of the semiconductor element and the third upper surface of the conductive paste application portion. The semiconductor element mounting portion is in contact with the first bottom surface of the semiconductor element and the third upper surface of the conductive paste application portion. The conductive paste is provided between the first bottom surface and the third upper surface so that the conductive paste contacts the first bottom surface of the semiconductor element and the third upper surface of the conductive paste application portion. The size of the semiconductor element mounting portion in a plan view is smaller than the size of the first bottom surface of the semiconductor element and the size of the third upper surface of the conductive paste application portion. The size of the third upper surface of the conductive paste application portion is smaller than the size of the first bottom surface of the semiconductor element. The portion where the conductive paste contacts the semiconductor element is only the first bottom surface of the semiconductor element. The height of the conductive paste application portion is higher than the height of the semiconductor element mounting portion. <,> The conductive paste is provided not only on the third upper surface of the conductive paste application portion but also on the side surface of the conductive paste application portion, and is in contact with the second upper surface of the substrate 。

Advantages of the Invention

[0010] According to the present disclosure, the semiconductor element has a first upper surface provided with a first electrode and a first bottom surface. The semiconductor element mounting portion is in contact with the first bottom surface of the semiconductor element and the third upper surface of the conductive paste application portion. The conductive paste is provided between the first bottom surface and the third upper surface so that the conductive paste contacts the first bottom surface of the semiconductor element and the third upper surface of the conductive paste application portion. The size of the semiconductor element mounting portion in a plan view is smaller than the size of the first bottom surface of the semiconductor element and the size of the third upper surface of the conductive paste application portion. The size of the third upper surface of the conductive paste application portion is smaller than the size of the first bottom surface of the semiconductor element. The portion where the conductive paste contacts the semiconductor element is only the first bottom surface of the semiconductor element.

[0011] Thereby, it is possible to suppress the occurrence of a short circuit between the electrode on the upper surface of the semiconductor element and the conductive paste due to electromigration.

Brief Description of the Drawings

[0012]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Embodiments for Carrying Out the Invention

[0013] Hereinafter, embodiments will be described with reference to the drawings. In the following drawings, the same reference numerals are assigned to the same components. The names and functions of the components with the same reference numerals are the same. Therefore, detailed descriptions of some of the components with the same reference numerals may be omitted.

[0014] Note that the dimensions, materials, shapes, relative arrangements of the components, etc. exemplified in the embodiments may be appropriately changed according to the configuration of the device, various conditions, etc. Also, the dimensions of the components in the figures may be different from the actual dimensions.

[0015] <Embodiment 1> FIG. 1 is a plan view showing the configuration of a high-frequency module 100 according to Embodiment 1. The high-frequency module 100 is a module having a function of performing wireless communication, for example. The wireless communication is communication using a high-frequency signal, for example.

[0016] In FIG. 1, the X direction, Y direction, and Z direction are orthogonal to each other. The X direction, Y direction, and Z direction shown in the following figures are also orthogonal to each other. Hereinafter, the direction including the X direction and the direction opposite to the X direction (-X direction) is also referred to as the "X-axis direction". Also, hereinafter, the direction including the Y direction and the direction opposite to the Y direction (-Y direction) is also referred to as the "Y-axis direction". Also, hereinafter, the direction including the Z direction and the direction opposite to the Z direction (-Z direction) is also referred to as the "Z-axis direction".

[0017] In the following, the plane including the X-axis direction and the Y-axis direction is also referred to as the "XY plane". In the following, the plane including the X-axis direction and the Z-axis direction is also referred to as the "XZ plane". In the following, the plane including the Y-axis direction and the Z-axis direction is also referred to as the "YZ plane".

[0018] FIG. 2 is a cross-sectional view of the high-frequency module 100 according to Embodiment 1 along the line A1-A2 of FIG. 1. FIG. 3 is a perspective view of the main components included in the high-frequency module 100 according to Embodiment 1. In FIG. 3, in order to make the configuration easier to understand, some of the plurality of components included in the high-frequency module 100 are not shown.

[0019] As shown in FIGS. 1, 2, and 3, the high-frequency module 100 includes a semiconductor element S1, a substrate 3, a conductive paste application portion 4, a semiconductor element mounting portion 5, and a connection substrate 8.

[0020] The semiconductor element S1 is joined to the substrate 3 by the conductive paste 2. That is, the semiconductor element S1 is fixed to the substrate 3 by the conductive paste 2.

[0021] The shape of the semiconductor element S1 is plate-shaped. Specifically, the shape of the semiconductor element S1 is a quadrangular prism. Therefore, the shape of the semiconductor element S1 in plan view is rectangular. The rectangle is, for example, a square. The semiconductor element S1 has four corners. The thickness of the semiconductor element S1 is, for example, a thickness included in the range from 0.1 mm to 0.5 mm.

[0022] Note that the shape of the semiconductor element S1 is not limited to a quadrangular prism and may be other shapes. Also, the shape of the semiconductor element S1 in plan view is not limited to a square and may be, for example, a rectangle, a circle, or the like.

[0023] The semiconductor element S1 is, for example, an integrated circuit. The integrated circuit is one in which active elements, circuits, etc. are formed on a semiconductor substrate. The material constituting the semiconductor substrate is Si, SiC, GaAs, GaN, or the like.

[0024] The semiconductor element S1 has a top surface S1a, a bottom surface S1b, and a side surface S1c. The shape of the top surface S1a is square. The length of one side of the top surface S1a is, for example, a length included in the range from 0.3 mm to 1 mm. Note that the shape of the top surface S1a is not limited to a square. The shape of the top surface S1a may be, for example, rectangular, circular, or the like.

[0025] An electrode E1 is provided on the top surface S1a. The electrode E1 is provided, for example, at the center of the top surface S1a. Note that the position where the electrode E1 is provided is not limited to the center of the top surface S1a. The electrode E1 can be provided at any position on the top surface S1a according to the function of the semiconductor element S1. Also, the number of electrodes E1 provided on the top surface S1a may be two or more.

[0026] Also, an electrode E2 is provided on the bottom surface S1b of the semiconductor element S1. The electrode E2 is made of a highly conductive metal material. The electrode E2 is made of, for example, copper, aluminum, or the like. On the surface of the metal material constituting the electrode E2, plating using nickel, gold, or the like may be applied to prevent oxidation, corrosion, etc. of the metal material.

[0027] The conductive paste 2 is a member having conductivity. The conductive paste 2 is used for joining a plurality of members. The conductive paste 2 is, for example, a sintered material, a conductive adhesive, solder, or the like.

[0028] The above sintered material is, for example, silver particles of about several nm dispersed in a solvent. The sintered material is sintered at a temperature lower than the heat-resistant temperature of the semiconductor element S1 and the substrate 3. Here, assume that the semiconductor element S1 is made of Si. In this case, the temperature at which the sintered material is sintered is preferably 300°C or lower. Further, the temperature at which the sintered material is sintered is more preferably 200°C or lower.

[0029] In addition, the above conductive adhesive is composed of a resin mixed with conductive particles such as silver, copper, gold, nickel, etc. The resin is an epoxy resin, an acrylic resin, a silicone resin, etc. The above conductive particles are, for example, those obtained by plating a metal on the surface of resin particles. Also, the conductive particles are, for example, those coated with a metal by vapor deposition. The types of conductive adhesives are, for example, one-component types, two-component mixed types, etc. Also, the conductive adhesive is a heat-curing adhesive, a moisture-curing adhesive, an ultraviolet-curing adhesive, etc.

[0030] The above solder is composed of a material that can be soldered at a temperature below the heat-resistant temperature of the semiconductor element S1 and the substrate 3. The solder is, for example, a eutectic solder containing 38% by weight of lead in tin. Also, the solder is, for example, a lead-free solder containing 3% by weight of silver and 0.5% by weight of copper in tin. Also, the solder is, for example, a solder containing 80% by weight of gold in tin.

[0031] The conductive paste 2 desirably has a viscosity that is easy to adjust the coating amount of the conductive paste 2. Also, the conductive paste 2 desirably has a viscosity such that the conductive paste 2 does not flow out from the area where the conductive paste 2 is applied. The viscosity of the conductive paste 2 is a viscosity included in the range from 10 Pa·S to 100 Pa·S. It is preferable that the viscosity of the conductive paste 2 is a viscosity included in the range from 15 Pa·S to 50 Pa·S.

[0032] The coating method of the conductive paste 2 is a method using an air dispenser, a fixed-volume screw dispenser, pin transfer, printing supply, etc.

[0033] The shape of the substrate 3 in plan view is rectangular. The substrate 3 has an upper surface 3a and a bottom surface 3b. The substrate 3 is composed of a material excellent in heat resistance, processability, thermal conductivity, etc. The substrate 3 is composed of a metal such as copper or aluminum.

[0034] Note that, as the material constituting the substrate 3, a material having a coefficient of linear expansion close to that of the semiconductor element S1 may be used. Thereby, the thermal stress applied to the conductive paste 2 can be reduced due to changes in the environmental temperature.

[0035] Here, assume that the material constituting the semiconductor element S1 is Si. In this case, by using a copper-tungsten alloy, a copper-molybdenum alloy, etc. as the material constituting the substrate 3, the thermal stress applied to the conductive paste 2 can be reduced. Further, plating using a metal for preventing oxidation of the surface and generation of corrosion of the surface may be applied to the surface of the substrate 3. The metal is nickel, gold, etc.

[0036] The conductive paste application part 4 is a plate-like member. Specifically, the shape of the conductive paste application part 4 is a quadrangular prism. The shape of the conductive paste application part 4 in plan view is, for example, a square.

[0037] Note that the shape of the conductive paste application part 4 is not limited to a quadrangular prism, and may be other shapes such as a cylinder. Further, the shape of the conductive paste application part 4 in plan view is not limited to a square, and may be, for example, a rectangle, a circle, etc.

[0038] The conductive paste application part 4 is fixed to the upper surface 3a of the substrate 3. That is, the conductive paste application part 4 is configured in an island shape. The conductive paste application part 4 extends from the upper surface 3a of the substrate 3 toward the bottom surface S1b of the semiconductor element S1. Further, the conductive paste application part 4 extends along a direction perpendicular to the upper surface 3a of the substrate 3.

[0039] The expression "direction perpendicular to the upper surface 3a" also includes the meaning of a direction substantially perpendicular to the upper surface 3a. The "direction substantially perpendicular to the upper surface 3a" is, for example, the direction in which the direction perpendicular to the upper surface 3a is inclined within a range of 1 degree to 10 degrees.

[0040] The conductive paste application part 4 has an upper surface 4a and a bottom surface 4b. The upper surface 4a is the surface on which the conductive paste 2 is provided. As described above, the conductive paste application part 4 is fixed to the upper surface 3a of the substrate 3. Therefore, the upper surface 4a of the conductive paste application part 4 exists at a position higher than the upper surface 3a of the substrate 3.

[0041] Also, the shape of the upper surface 4a is rectangular. Specifically, the shape of the upper surface 4a is square. The upper surface 4a has four corner portions. Note that the shape of the upper surface 4a is not limited to a square. The shape of the upper surface 4a may be, for example, rectangular, circular, or the like.

[0042] The semiconductor element S1 is provided above the upper surface 4a of the conductive paste application part 4.

[0043] Hereinafter, the region between the bottom surface S1b of the semiconductor element S1 and the upper surface 4a of the conductive paste application part 4 is also referred to as the "paste region R1" or the "paste region". The paste region R1 is filled with the conductive paste 2. The conductive paste 2 filled in the paste region R1 has a configuration that produces an effect of relaxing the stress applied to the semiconductor element S1 (hereinafter, also referred to as the "stress relaxation effect").

[0044] The semiconductor element mounting part 5 is a member on which the semiconductor element S1 is mounted. In this specification, "mounted" and "mount" each mean "placed" and "place", respectively.

[0045] The shape of the semiconductor element mounting part 5 is plate-like. Preferably, the shape of the semiconductor element mounting part 5 in plan view is the same as the shape of the conductive paste application part 4 in plan view. Therefore, the shape of the semiconductor element mounting part 5 in plan view is square.

[0046] Note that the shape of the semiconductor element mounting portion 5 in a plan view is not limited to a square, and may be, for example, a rectangle, a circle, or the like. Further, the shape of the semiconductor element mounting portion 5 in a plan view may be a shape corresponding to the shape of the conductive paste application portion 4, the shape of the semiconductor element S1, or the like.

[0047] The semiconductor element mounting portion 5 is fixed to the upper surface 4a of the conductive paste application portion 4. The semiconductor element mounting portion 5 extends from the upper surface 4a of the conductive paste application portion 4 toward the bottom surface S1b of the semiconductor element S1. Further, the semiconductor element mounting portion 5 extends along a direction perpendicular to the upper surface 4a of the conductive paste application portion 4.

[0048] The expression "direction perpendicular to the upper surface 4a" also includes the meaning of a direction substantially perpendicular to the upper surface 4a. The "direction substantially perpendicular to the upper surface 4a" is, for example, the direction in which the direction perpendicular to the upper surface 4a is inclined within a range of 1 degree to 10 degrees.

[0049] The semiconductor element mounting portion 5 is a member having an upper surface 5a and a bottom surface 5b. The upper surface 5a is the surface on which the semiconductor element S1 is mounted. Therefore, the upper surface 5a is the surface that supports the semiconductor element S1.

[0050] The semiconductor element mounting portion 5 is provided at the central portion of the upper surface 4a of the conductive paste application portion 4. That is, the semiconductor element mounting portion 5 extends along a direction perpendicular to the central portion of the upper surface 4a of the conductive paste application portion 4. The expression "direction perpendicular to the central portion of the upper surface 4a" also includes the meaning of a direction substantially perpendicular to the central portion of the upper surface 4a.

[0051] Further, the semiconductor element mounting portion 5 is provided between the bottom surface S1b of the semiconductor element S1 and the upper surface 4a of the conductive paste application portion 4. The semiconductor element mounting portion 5 is in contact with the bottom surface S1b of the semiconductor element S1 and the upper surface 4a of the conductive paste application portion 4. Specifically, the semiconductor element mounting portion 5 is in contact with the central portion of the bottom surface S1b of the semiconductor element S1 and the central portion of the upper surface 4a of the conductive paste application portion 4. Thereby, the height of the paste region R1 between the bottom surface S1b of the semiconductor element S1 and the upper surface 4a of the conductive paste application portion 4 is defined by the height of the semiconductor element mounting portion 5.

[0052] Also, the conductive paste 2 is provided between the bottom surface S1b of the semiconductor element S1 and the upper surface 4a of the conductive paste application portion 4 so that the conductive paste 2 is in contact with the bottom surface S1b and the upper surface 4a. Further, the conductive paste 2 is in contact with the upper surface 3a of the substrate 3.

[0053] The size of the semiconductor element mounting portion 5 in plan view is smaller than the size of the bottom surface S1b of the semiconductor element S1 and the size of the upper surface 4a of the conductive paste application portion 4. Specifically, the area of the upper surface 5a of the semiconductor element mounting portion 5 is smaller than the area of the bottom surface S1b of the semiconductor element S1. Also, the area of the upper surface 5a of the semiconductor element mounting portion 5 is smaller than the area of the upper surface 4a of the conductive paste application portion 4.

[0054] Also, the size of the upper surface 4a of the conductive paste application portion 4 is smaller than the size of the bottom surface S1b of the semiconductor element S1. Specifically, the area of the upper surface 4a of the conductive paste application portion 4 is smaller than the area of the bottom surface S1b of the semiconductor element S1.

[0055] Also, the portion where the conductive paste 2 is in contact with the semiconductor element S1 is only the bottom surface S1b of the semiconductor element S1.

[0056] Here, assume that the bottom surface S1b of the semiconductor element S1 is a square with one side being 0.3 mm. In this case, the length of one side of the square that is the contour of the conductive paste application portion 4 in plan view is a length included in the range from 0.21 mm to 0.24 mm.

[0057] As described above, the area of the upper surface 5a of the semiconductor element mounting portion 5 is smaller than the area of the upper surface 4a of the conductive paste application portion 4. Here, it is assumed that the length of one side of the square, which is the contour of the conductive paste application portion 4 in plan view, is 0.24 mm. In this case, the length of one side of the square, which is the contour of the semiconductor element mounting portion 5 in plan view, is a length included in the range from 0.1 mm to 0.14 mm.

[0058] The height of the conductive paste application portion 4 is set based on, for example, the required stress relaxation effect, the required thermal conductivity, etc. Also, the height of the conductive paste application portion 4 is set based on, for example, the required parallelism of the semiconductor element S1 with respect to the substrate 3. The higher the parallelism of the semiconductor element S1 with respect to the substrate 3, the closer the semiconductor element S1 is to a state parallel to the substrate 3.

[0059] If the height of the conductive paste application portion 4 is too small, the stress relaxation effect becomes small. Also, if the height of the conductive paste application portion 4 is too large, it becomes difficult to dissipate the Joule heat generated in the semiconductor element S1 to the substrate 3. Also, if the height of the conductive paste application portion 4 is too large, the parallelism of the semiconductor element S1 with respect to the substrate 3 decreases. Considering the above, the height of the conductive paste application portion 4 is set to a height included in the range from 0.5 mm to 1 mm.

[0060] Also, the height of the semiconductor element mounting portion 5 is set based on the required stress relaxation effect, the required thermal conductivity, etc., in the same manner as the height of the conductive paste application portion 4. Also, the height of the semiconductor element mounting portion 5 is set based on, for example, the required parallelism of the semiconductor element S1 with respect to the substrate 3. The height of the semiconductor element mounting portion 5 is a height included in the range from 0.1 mm to 0.3 mm.

[0061] The materials constituting each of the conductive paste application portion 4 and the semiconductor element mounting portion 5 are the same as the materials constituting the substrate 3. Hereinafter, the method of forming the conductive paste application portion 4 and the semiconductor element mounting portion 5 is also referred to as "forming method A". In forming method A, for example, when the substrate 3 is processed, the conductive paste application portion 4 and the semiconductor element mounting portion 5 are formed.

[0062] Also, hereinafter, the method of fixing the conductive paste application portion 4 to the substrate 3 and the method of fixing the semiconductor element mounting portion 5 to the conductive paste application portion 4 are also referred to as "fixing method A".

[0063] In fixing method A, for example, projections are provided on the upper surface 3a of the substrate 3. The shape of the projection is, for example, cylindrical. A male screw is provided on the outer side surface of the projection. Also, a hole for inserting the projection is provided on the bottom surface 4b of the conductive paste application portion 4. The shape of the hole is, for example, cylindrical. A female screw is provided on the inner side surface of the hole. The male screw of the projection on the upper surface 3a of the substrate 3 is screwed with the female screw of the hole on the bottom surface 4b of the conductive paste application portion 4, whereby the conductive paste application portion 4 is fixed to the substrate 3.

[0064] Also, the method of fixing the semiconductor element mounting portion 5 to the conductive paste application portion 4 may also be a method using projections and holes as described above. For example, projections are provided on the upper surface 4a of the conductive paste application portion 4. Also, a hole for inserting the projection is provided on the bottom surface 5b of the semiconductor element mounting portion 5. The male screw of the projection on the upper surface 4a of the conductive paste application portion 4 is screwed with the female screw of the hole on the bottom surface 5b of the semiconductor element mounting portion 5, whereby the semiconductor element mounting portion 5 is fixed to the conductive paste application portion 4.

[0065] Also, fixing method A may be a method using an adhesive. In fixing method A using an adhesive, the conductive paste application portion 4 is fixed to the upper surface 3a of the substrate 3 by the adhesive. Also, in the fixing method A, the semiconductor element mounting portion 5 is fixed to the upper surface 4a of the conductive paste application portion 4 by the adhesive.

[0066] Also, the fixing method A may be a method using welding. In this case, in the fixing method A using welding, the conductive paste application part 4 is welded to the upper surface 3a of the substrate 3. Further, the semiconductor element mounting part 5 is welded to the upper surface 4a of the conductive paste application part 4.

[0067] The connection substrate 8 is joined to the upper surface 3a of the substrate 3 by an adhesive 9. An electrode E8 is provided on the upper surface of the connection substrate 8. The electrode E1 of the semiconductor element S1 is electrically connected to the electrode E8 of the connection substrate 8 via a wire W1.

[0068] Each of the electrode E1 and the electrode E8 is made of a highly conductive metal material. The metal material is copper, aluminum, etc. The surface of the metal material constituting each of the electrode E1 and the electrode E8 may be plated with nickel, gold, etc. to prevent oxidation, corrosion, etc. of the metal material.

[0069] The wire W1 is made of a material having electrical conductivity. The wire W1 is composed of, for example, gold, aluminum, copper wire with tin plating, etc. The connection method of the wire W1 is a method using thermocompression bonding, ultrasonic combined thermocompression bonding, etc. The process of connecting the wire W1 is performed automatically or semi-automatically.

[0070] The connection substrate 8 is made of an insulating material such as alumina. The height of the upper surface of the connection substrate 8 is preferably the same as the height of the upper surface S1a of the semiconductor element S1 mounted on the semiconductor element mounting part 5.

[0071] The adhesive 9 is a material for joining a plurality of members. The application method of the adhesive 9 is a method using an air dispenser, a fixed-volume screw dispenser, pin transfer, printing supply, etc.

[0072] As described above, the conductive paste 2 filled in the paste region R1 has a configuration that produces a stress relaxation effect for relaxing the stress applied to the semiconductor element S1. In the stress relaxation effect, the amount of stress absorbed as energy is proportional to the square of the strain amount of the conductive paste 2. By increasing the thickness of the conductive paste 2, the strain amount of the conductive paste 2 can be increased. Therefore, by increasing the thickness of the conductive paste 2, the stress as energy that the conductive paste 2 can absorb increases.

[0073] From the above, the paste region R1 filled with the conductive paste 2 is a configuration (hereinafter, also referred to as a "stress relaxation configuration") for relaxing the stress applied to the semiconductor element S1. The high-frequency module 100 has a stress relaxation configuration.

[0074] (Manufacturing method) Hereinafter, the manufacturing method of the high-frequency module 100 is also referred to as "manufacturing method Pr". Next, the manufacturing method Pr will be described. In the manufacturing method Pr, first, a bonding step is performed. In the bonding step, the substrate 3, the conductive paste application part 4, and the semiconductor element mounting part 5 are bonded to each other.

[0075] Hereinafter, the height that is equal to or higher than the height of the semiconductor element mounting part 5 is also referred to as the "specified height".

[0076] Next, an application step is performed. In the application step, the uncured conductive paste 2 having fluidity is applied to the upper surface 4a of the conductive paste application part 4 so that the thickness of the conductive paste 2 becomes thicker than the thickness corresponding to the specified height. The conductive paste 2 is, for example, a thermosetting adhesive.

[0077] Next, a mounting step is performed. The mounting step is a step of mounting the semiconductor element S1 on the semiconductor element mounting part 5. Specifically, in the mounting step, the semiconductor element S1 is mounted on the upper surface 5a of the semiconductor element mounting part 5 so that the bottom surface S1b of the semiconductor element S1 contacts the upper surface 5a of the semiconductor element mounting part 5 and the conductive paste 2.

[0078] The mounting of the semiconductor element S1 is performed, for example, in a state where the semiconductor element S1 is picked up by a vacuum suction type nozzle. Further, the mounting of the semiconductor element S1 is performed after the alignment of the semiconductor element S1 with respect to the upper surface 5a of the semiconductor element mounting portion 5 is performed. For the mounting of the semiconductor element S1, an apparatus capable of performing the mounting of members and the like with high precision is used. The apparatus is an automatic mounter, a die bonder, or the like.

[0079] A method of aligning the semiconductor element S1 is, for example, a method of performing the alignment in a state where an alignment mark is provided on the bottom surface S1b of the semiconductor element S1. Further, a method of aligning the semiconductor element S1 is, for example, a method of performing the alignment in a state where an alignment mark is provided on the upper surface 3a of the substrate 3 or the upper surface 5a of the semiconductor element mounting portion 5.

[0080] Next, a curing process is performed. In the curing process, a process for curing the uncured conductive paste 2 is performed so that the semiconductor element S1 is joined to the conductive paste 2. Here, the conductive paste 2 is a heat-curable adhesive. In the curing process, heating is performed on the conductive paste 2 so that the conductive paste 2 cures.

[0081] Note that the process performed in the curing process is not limited to heating of the uncured conductive paste 2. In the curing process, for example, reflow may be performed in a state where the cured conductive paste 2 is applied to the upper surface 4a of the conductive paste application portion 4.

[0082] Next, an adhesive application process is performed. Hereinafter, an area for joining the connection substrate 8 on the upper surface 3a of the substrate 3 is also referred to as a "substrate joining area". In the adhesive application process, the adhesive 9 is applied to the substrate joining area on the upper surface 3a of the substrate 3.

[0083] Next, a substrate mounting process is performed. In the substrate mounting process, the connection substrate 8 is mounted on the adhesive 9 applied to the substrate bonding region on the upper surface 3a of the substrate 3. The mounting of the connection substrate 8 is performed, for example, in a state where the connection substrate 8 is picked up by a vacuum suction type nozzle.

[0084] Next, a wire bonding process is performed. In the wire bonding process, a wire bonder connects one end of the wire W1 to the electrode E1 of the semiconductor element S1 and the other end of the wire W1 to the electrode E8 of the connection substrate 8. Through the above respective processes, the high-frequency module 100 is manufactured.

[0085] (Summary) As described above, according to the present embodiment, the semiconductor element S1 has an upper surface S1a provided with an electrode E1 and a bottom surface S1b. The semiconductor element mounting portion 5 is in contact with the bottom surface S1b of the semiconductor element S1 and the upper surface 4a of the conductive paste application portion 4. The conductive paste 2 is provided between the bottom surface S1b and the upper surface 4a so as to be in contact with the bottom surface S1b of the semiconductor element S1 and the upper surface 4a of the conductive paste application portion 4. The size of the semiconductor element mounting portion 5 in plan view is smaller than the size of the bottom surface S1b of the semiconductor element S1 and the size of the upper surface 4a of the conductive paste application portion 4. The size of the upper surface 4a of the conductive paste application portion 4 is smaller than the size of the bottom surface S1b of the semiconductor element S1. The portion where the conductive paste 2 is in contact with the semiconductor element S1 is only the bottom surface S1b of the semiconductor element S1.

[0086] Thereby, it is possible to suppress the occurrence of a short circuit between the electrode on the upper surface of the semiconductor element and the conductive paste due to electromigration.

[0087] Also, according to the present embodiment, the semiconductor element mounting portion 5 is in contact with the bottom surface S1b of the semiconductor element S1 and the upper surface 4a of the conductive paste application portion 4. Therefore, the semiconductor element mounting portion 5 defines the distance between the bottom surface S1b of the semiconductor element S1 and the upper surface 4a of the conductive paste application portion 4. Accordingly, the thicknesses of a plurality of portions of the conductive paste 2 provided between the bottom surface S1b of the semiconductor element S1 and the upper surface 4a of the conductive paste application portion 4 can be made equal. Therefore, a stress relaxation effect for relaxing the stress applied to the semiconductor element S1 can be sufficiently obtained.

[0088] Also, according to the present embodiment, the upper surface 4a of the conductive paste application portion 4 is located at a position higher than the upper surface 3a of the substrate 3. Further, the conductive paste application portion 4 is configured in an island shape. Also, the area of the upper surface 4a of the conductive paste application portion 4 is smaller than the area of the bottom surface S1b of the semiconductor element S1.

[0089] Thereby, in the coating step of the manufacturing method Pr described above, the conductive paste 2 that protrudes from the upper surface 4a of the conductive paste application portion 4 (hereinafter, also referred to as "extra conductive paste 2") flows to the side surface of the conductive paste application portion 4. Therefore, it is possible to suppress the occurrence of the following situation A. The situation A is a situation in which a fillet made of the extra conductive paste 2 is formed on the side surface S1c of the semiconductor element S1 by the extra conductive paste 2.

[0090] Accordingly, it is possible to suppress the occurrence of a problem of a short circuit between the electrode E1 on the upper surface S1a of the semiconductor element S1 and the extra conductive paste 2 due to electromigration.

[0091] By the way, as described above, when the current density in the fillet becomes high in a state where a fillet is formed on the side surface of a semiconductor element having an electrode provided on its upper surface, there is a problem that a short circuit due to electromigration occurs between the conductive paste constituting the fillet and the electrode on the upper surface of the semiconductor element.

[0092] In the related configuration A described above, a configuration for reducing the volume of the fillet formed on the side surface of the semiconductor element is disclosed. In the related configuration A, the area of the upper surface of the mounting portion is smaller than the area of the bottom surface of the semiconductor element. As a result, the excess conductive paste flows to the side surface of the mounting portion. However, in the related configuration A, the fillet formed on the side surface of the plate-shaped semiconductor element cannot be completely eliminated.

[0093] Also, when the volume of the fillet made of the conductive paste is reduced as in the related configuration A, the stress relaxation effect for relaxing the stress applied to the semiconductor element decreases. When the stress relaxation effect decreases, problems such as failures of the semiconductor element occur.

[0094] Therefore, it is desired to achieve both suppression of the occurrence of a short circuit due to electromigration and provision of a configuration in which a sufficient stress relaxation effect can be obtained.

[0095] The high-frequency module 100 of the present embodiment has a configuration for achieving the above effects. Therefore, with the high-frequency module 100 of the present embodiment, it is possible to achieve both suppression of the occurrence of a short circuit due to electromigration and provision of a configuration in which a sufficient stress relaxation effect can be obtained.

[0096] <Embodiment 2> FIG. 4 is a plan view showing the configuration of the high-frequency module 100A according to Embodiment 2. FIG. 5 is a cross-sectional view of the high-frequency module 100A according to Embodiment 2 taken along line B1 - B2 of FIG. 4. FIG. 6 is a perspective view of the main components included in the high-frequency module 100A according to Embodiment 2. In FIG. 6, in order to make the configuration easier to understand, some of the plurality of components included in the high-frequency module 100A are not shown.

[0097] The high-frequency module 100A is mainly different from the high-frequency module 100 of FIGS. 1 and 3 in that it includes a plurality of semiconductor element mounting portions 5. The other configurations of the high-frequency module 100A are the same as those of the high-frequency module 100.

[0098] The configuration of this embodiment is a configuration that increases the parallelism with respect to the conductive paste application portion 4 of the semiconductor element S1. The higher the parallelism with respect to the conductive paste application portion 4 of the semiconductor element S1, the closer the semiconductor element S1 is to being parallel to the conductive paste application portion 4.

[0099] As shown in FIGS. 4, 5, and 6, the high-frequency module 100A includes, as an example, k semiconductor element mounting portions 5. "k" is an integer of 2 or more. In this embodiment, "k" is, as an example, 5. That is, the high-frequency module 100A includes five semiconductor element mounting portions 5.

[0100] Note that the number of semiconductor element mounting portions 5 included in the high-frequency module 100A is not limited to 5. The number of semiconductor element mounting portions 5 included in the high-frequency module 100A may be 2, 3, 4, or 6 or more.

[0101] Each of the k semiconductor element mounting portions 5 included in the high-frequency module 100A is a member that supports the bottom surface S1b of the semiconductor element S1. The shape of the k semiconductor element mounting portions 5 is plate-like. Specifically, the shape of each of the k semiconductor element mounting portions 5 is a quadrangular prism. Note that the shape of each of the k semiconductor element mounting portions 5 is not limited to a quadrangular prism and may be other shapes such as a cylinder.

[0102] The heights of the k semiconductor element mounting portions 5 are the same. The expression "the heights of the k semiconductor element mounting portions 5 are the same" also includes the meaning that the heights of the k semiconductor element mounting portions 5 are equivalent. If the parallelism with respect to the conductive paste application portion 4 of the semiconductor element S1 is within an acceptable range, variations in the heights of the k semiconductor element mounting portions 5 are acceptable.

[0103] Each of the k semiconductor element mounting portions 5 has an upper surface 5a. The shape of the upper surface 5a of each of the k semiconductor element mounting portions 5 is, for example, square. The size of each semiconductor element mounting portion 5 in plan view is smaller than the size of the upper surface 4a of the conductive paste application portion 4. Specifically, the area of the upper surface 5a of each of the k semiconductor element mounting portions 5 is smaller than the area of the upper surface 4a of the conductive paste application portion 4. For example, the length of one side of the upper surface 5a of each of the k semiconductor element mounting portions 5 is less than half the length of one side of the upper surface 4a of the conductive paste application portion 4.

[0104] Note that the shape of the upper surface 5a is not limited to square. The shape of the upper surface 5a may be, for example, rectangular, circular, or the like.

[0105] One semiconductor element mounting portion 5 included in the k semiconductor element mounting portions 5 is provided at the central portion of the upper surface 4a of the conductive paste application portion 4. Hereinafter, among the k semiconductor element mounting portions 5, the semiconductor element mounting portion 5 provided at the central portion of the upper surface 4a of the conductive paste application portion 4 is also referred to as "semiconductor element mounting portion 5m". The semiconductor element mounting portion 5m is, for example, the semiconductor element mounting portion 5 of Embodiment 1 shown in FIGS. 2 and 3.

[0106] Also, hereinafter, among the k semiconductor element mounting portions 5, the semiconductor element mounting portions 5 other than the semiconductor element mounting portion 5m are also referred to as "semiconductor element mounting portions 5s". In the situation where "k" is 5, the high-frequency module 100A includes one semiconductor element mounting portion 5m and four semiconductor element mounting portions 5s. The shape of the upper surface 5a of one semiconductor element mounting portion 5m and the shape of the upper surfaces 5a of the four semiconductor element mounting portions 5s are square.

[0107] The upper surface 4a of the conductive paste application portion 4 of the present embodiment has four corner portions, similar to Embodiment 1. Hereinafter, the four corner portions of the upper surface 4a of the conductive paste application portion 4 are also referred to as "four application corner portions".

[0108] A semiconductor element mounting portion 5s is provided at each of the four coating corners on the upper surface 4a of the conductive paste coating portion 4. The shape of the four semiconductor element mounting portions 5s is a quadrangular prism.

[0109] The semiconductor element mounting portion 5s extends from the upper surface 4a of the conductive paste coating portion 4 toward the bottom surface S1b of the semiconductor element S1. Further, the semiconductor element mounting portion 5s extends along a direction perpendicular to the upper surface 4a of the conductive paste coating portion 4. The "direction perpendicular to the upper surface 4a" also includes the meaning of the direction substantially perpendicular to the upper surface 4a described above.

[0110] The size of the semiconductor element mounting portion 5s in plan view is smaller than the size of the conductive paste coating portion 4 in plan view. Specifically, the area of the upper surface 5a of the semiconductor element mounting portion 5s is smaller than the area of the upper surface 4a of the conductive paste coating portion 4.

[0111] The semiconductor element S1 is mounted on the upper surfaces 5a of the four semiconductor element mounting portions 5s and the upper surface 5a of one semiconductor element mounting portion 5m.

[0112] (Summary) As described above, if the parallelism of the semiconductor element S1 with respect to the conductive paste coating portion 4 is within an allowable range, variations in the heights of the k semiconductor element mounting portions 5 are allowable. When such height variations exist, the heights of the k semiconductor element mounting portions 5 are different.

[0113] Hereinafter, among the k semiconductor element mounting portions 5, the highest semiconductor element mounting portion 5 is also referred to as the "highest semiconductor element mounting portion 5". Further, hereinafter, among the k semiconductor element mounting portions 5, the lowest semiconductor element mounting portion 5 is also referred to as the "lowest semiconductor element mounting portion 5".

[0114] In this embodiment, the k semiconductor element mounting portions 5 are arranged at the center of the upper surface 4a of the conductive paste application portion 4 and at four application corner portions of the upper surface 4a. With this arrangement, even when the parallelism of the semiconductor element S1 with respect to the conductive paste application portion 4 is the lowest, the parallelism will not be lower than the parallelism corresponding to the difference between the height of the highest semiconductor element mounting portion 5 and the height of the lowest semiconductor element mounting portion 5.

[0115] Therefore, with the above-described arrangement of the k semiconductor element mounting portions 5, there is an effect that the parallelism of the semiconductor element S1 with respect to the conductive paste application portion 4 can be increased. For example, when the length of one side of the upper surface S1a of the semiconductor element S1 is longer than 1 mm, the above effect becomes prominent.

[0116] Hereinafter, the length of one side of the upper surface S1a of the semiconductor element S1 is also referred to as the "outer diameter size". In the situation where the high-frequency module is mass-produced, variations in the heights of the k semiconductor element mounting portions 5 occur. The larger the outer diameter size of the semiconductor element S1, the greater the inclination of the semiconductor element S1 due to the variations in the heights of the k semiconductor element mounting portions 5.

[0117] In this embodiment, with the above-described arrangement of the k semiconductor element mounting portions 5, it is possible to reduce the variations in the heights of the k semiconductor element mounting portions 5 accompanying the mass production of the high-frequency module. Therefore, it is possible to suppress the parallelism of the semiconductor element S1 with respect to the conductive paste application portion 4 from extremely decreasing as the high-frequency module is mass-produced. In addition, it is possible to reduce the inclination of the semiconductor element S1 having a large outer diameter size accompanying the variations in the heights of the k semiconductor element mounting portions 5. Therefore, in the situation where the high-frequency module is mass-produced, it is possible to reduce the occurrence of defects in the high-frequency module caused by the inclination of the semiconductor element S1 having a large outer diameter size.

[0118] In addition, in the present embodiment, as described above, the variation in the height of the k semiconductor element mounting portions 5 can be reduced. Therefore, in the mounting process of mounting the semiconductor element S1 on the semiconductor element mounting portion 5, an effect can be obtained that the occurrence of a situation where the mounting posture of the semiconductor element S1 deteriorates can be suppressed.

[0119] <Embodiment 3> FIG. 7 is a plan view showing the configuration of the high-frequency module 100B according to Embodiment 3. FIG. 8 is a cross-sectional view of the high-frequency module 100B according to Embodiment 3 taken along line C1-C2 of FIG. 7. FIG. 9 is a perspective view of the main components included in the high-frequency module 100B according to Embodiment 3. In FIG. 9, in order to make the configuration easy to understand, some of the plurality of components included in the high-frequency module 100B are not shown.

[0120] The high-frequency module 100B is mainly different from the high-frequency module 100A in FIGS. 4 and 6 in that it further includes a holding portion 10 and the arrangement of the semiconductor element mounting portions 5s. The other configuration of the high-frequency module 100B is the same as that of the high-frequency module 100A.

[0121] As shown in FIGS. 7, 8, and 9, the high-frequency module 100B includes k semiconductor element mounting portions 5. In the present embodiment, "k" is, as an example, 5. That is, the high-frequency module 100B includes five semiconductor element mounting portions 5.

[0122] Note that the number of the semiconductor element mounting portions 5 included in the high-frequency module 100B is not limited to 5. The number of the semiconductor element mounting portions 5 included in the high-frequency module 100B may be 2, 3, 4, or 6 or more.

[0123] Each of the k semiconductor element mounting portions 5 included in the high-frequency module 100B is a member having an upper surface 5a that supports the bottom surface S1b of the semiconductor element S1.

[0124] In the situation where "k" is 5, the k semiconductor element mounting parts 5 are composed of one semiconductor element mounting part 5m and four semiconductor element mounting parts 5s. That is, the high-frequency module 100B includes one semiconductor element mounting part 5m which is a semiconductor element mounting part 5, and four semiconductor element mounting parts 5s which are semiconductor element mounting parts 5.

[0125] In the present embodiment, the four semiconductor element mounting parts 5s are provided on the upper surface 3a of the substrate 3. Also, the upper surface 4a of the conductive paste application part 4 of the present embodiment has four application corner parts, similar to the second embodiment.

[0126] Semiconductor element mounting parts 5s are provided around each of the four application corner parts that the upper surface 4a of the conductive paste application part 4 has. Specifically, semiconductor element mounting parts 5s are in contact with each of the four application corner parts that the upper surface 4a of the conductive paste application part 4 has. The shapes of the four semiconductor element mounting parts 5s are, for example, quadrangular prisms.

[0127] The semiconductor element mounting part 5s extends from the upper surface 3a of the substrate 3 toward the bottom surface S1b of the semiconductor element S1. The size of the semiconductor element mounting part 5s in plan view is smaller than the size of the conductive paste application part 4 in plan view. Specifically, the area of the upper surface 5a of the semiconductor element mounting part 5s is smaller than the area of the upper surface 4a of the conductive paste application part 4.

[0128] The heights of the upper surfaces 5a of the k semiconductor element mounting parts 5 are the same. The expression "The heights of the upper surfaces 5a of the k semiconductor element mounting parts 5 are the same" also includes the meaning that the heights of the upper surfaces 5a of the k semiconductor element mounting parts 5 are equivalent.

[0129] Specifically, the heights of the upper surfaces 5a of the four semiconductor element mounting parts 5s which are semiconductor element mounting parts 5, and the height of the upper surface 5a of the one semiconductor element mounting part 5m which is a semiconductor element mounting part 5 are the same. The semiconductor element S1 is mounted on the upper surfaces 5a of the four semiconductor element mounting parts 5s and the upper surface 5a of the one semiconductor element mounting part 5m.

[0130] Further, on the upper surface 5a of each of the four semiconductor element mounting portions 5s, a holding portion 10 for holding the semiconductor element S1 is provided. That is, the high-frequency module 100B is provided with four holding portions 10. As described above, the shape of the semiconductor element S1 in plan view is rectangular. Further, the semiconductor element S1 has four corner portions. The four holding portions 10 respectively hold the four corner portions of the semiconductor element S1.

[0131] The shape of each holding portion 10 in plan view is L-shaped. Therefore, each holding portion 10 has a recess.

[0132] Hereinafter, the corner portion of the upper surface 4a of the conductive paste application portion 4 will also be referred to as the "upper surface corner portion". Further, hereinafter, the upper surface corner portion close to the holding portion 10 will also be referred to as the "proximity corner portion". Each holding portion 10 is arranged on the upper surface 5a such that the bottom of the recess of the holding portion 10 and the proximity corner portion close to the holding portion 10 face each other in plan view.

[0133] Hereinafter, the L-shape indicated by the holding portion 10 in plan view will also be referred to as the "L-shaped surface". Further, hereinafter, one side outside the L-shaped surface in plan view will also be referred to as the "outer side 1 side". Further, hereinafter, one side inside the L-shaped surface in plan view will also be referred to as the "inner side 1 side". Further, hereinafter, one side of the upper surface 5a that contacts the outer side 1 side of the L-shaped surface will also be referred to as the "contact 1 side". Further, hereinafter, one side of the upper surface 5a that is parallel to the inner side 1 side of the L-shaped surface will also be referred to as the "parallel 1 side".

[0134] The length of the outer side 1 side of the L-shaped surface indicated by the holding portion 10 is the same as the length of the contact 1 side of the upper surface 5a that contacts the outer side 1 side. The length of the inner side 1 side of the L-shaped surface indicated by the holding portion 10 is shorter than the length of the parallel 1 side of the upper surface 5a that is parallel to the inner side 1 side. For example, the length of the inner side 1 side of the L-shaped surface indicated by the holding portion 10 is shorter than the length of the parallel 1 side of the upper surface 5a and longer than half of the length of the parallel 1 side.

[0135] Further, the height of the holding portion 10 corresponds to a height included in the range from half of the thickness of the semiconductor element S1 to the thickness of the semiconductor element S1.

[0136] (Summary) As described above, according to the present embodiment, semiconductor elements S1 are mounted on the upper surfaces 5a of the four semiconductor element mounting portions 5s and the upper surface 5a of the one semiconductor element mounting portion 5m. The four semiconductor element mounting portions 5s are respectively provided around the four coating corner portions of the upper surface 4a of the conductive paste coating portion 4. Also, the one semiconductor element mounting portion 5m is provided at the center of the upper surface 4a of the conductive paste coating portion 4.

[0137] Also, four holding portions 10 are respectively provided on the upper surfaces 5a of the four semiconductor element mounting portions 5s. The four holding portions 10 respectively hold the four corner portions of the semiconductor element S1.

[0138] With the above configuration, an effect can be obtained that the mounting accuracy of the semiconductor element S1 in the mounting process of mounting the semiconductor element S1 on the semiconductor element mounting portion 5 can be improved. Due to this effect, the mounting method for mounting the semiconductor element S1 on the semiconductor element mounting portion 5 can be realized by a method other than a high-precision mounting method in which the mounting of the semiconductor element S1 is performed by an automatic mounter, a die bonder, etc. Therefore, in the said mounting method, the restriction | limiting of using an automatic mounter, a die bonder, etc. can be eliminated.

[0139] In the present embodiment, the shape of the holding portion 10 in plan view is not limited to an L shape as long as the holding portion 10 can hold the corner portion of the semiconductor element S1.

[0140] It should be noted that the respective embodiments can be freely combined, or the respective embodiments can be appropriately modified or omitted.

Explanation of Reference Numerals

[0141] 2 Conductive paste, 3 Substrate, 4 Conductive paste coating portion, 5, 5m, 5s Semiconductor element mounting portion, 10 Holding portion, 100, 100A, 100B High-frequency module, E1, E2, E8 Electrode, S1 Semiconductor element.

Claims

1. A high-frequency module in which a plate-shaped semiconductor element is fixed with a conductive paste, wherein the semiconductor element has a first upper surface provided with a first electrode and a first bottom surface provided with a second electrode, the high-frequency module includes a substrate having a second upper surface, a plate-shaped member having a third upper surface on which the conductive paste is provided, and a conductive paste application portion fixed to the second upper surface of the substrate, the semiconductor element provided above the third upper surface of the conductive paste application portion, a member having a fourth upper surface for supporting the semiconductor element, and a semiconductor element mounting portion provided between the first bottom surface of the semiconductor element and the third upper surface of the conductive paste application portion, the semiconductor element mounting portion is in contact with the first bottom surface of the semiconductor element and the third upper surface of the conductive paste application portion, the conductive paste is provided between the first bottom surface and the third upper surface so as to be in contact with the first bottom surface of the semiconductor element and the third upper surface of the conductive paste application portion, the size of the semiconductor element mounting portion in a plan view is smaller than the size of the first bottom surface of the semiconductor element and the size of the third upper surface of the conductive paste application portion, the size of the third upper surface of the conductive paste application portion is smaller than the size of the first bottom surface of the semiconductor element, the portion where the conductive paste is in contact with the semiconductor element is only the first bottom surface of the semiconductor element, the height of the conductive paste application portion is higher than the height of the semiconductor element mounting portion, the conductive paste is provided not only on the third upper surface of the conductive paste application portion but also on the side surface of the conductive paste application portion and is in contact with the second upper surface of the substrate, a high-frequency module.

2. the conductive paste application portion extends from the second upper surface of the substrate toward the first bottom surface of the semiconductor element, the conductive paste application portion extends along a direction perpendicular to the second upper surface of the substrate, the high-frequency module according to Claim 1.

3. the semiconductor element mounting portion extends from the third upper surface of the conductive paste application portion toward the first bottom surface of the semiconductor element, the semiconductor element mounting portion extends along a direction perpendicular to the third upper surface of the conductive paste application portion, the high-frequency module according to Claim 1 or 2.

4. The shape of the third upper surface of the conductive paste application portion is rectangular. The high-frequency module according to any one of Claims 1 to 3.

5. At each of the four corner portions of the third upper surface of the conductive paste application portion, another semiconductor element mounting portion, which is a member for supporting the first bottom surface of the semiconductor element, is provided. The size of the another semiconductor element mounting portion in a plan view is smaller than the size of the conductive paste application portion in the plan view. The high-frequency module according to Claim 4.

6. The another semiconductor element mounting portion extends from the third upper surface of the conductive paste application portion toward the first bottom surface of the semiconductor element. The another semiconductor element mounting portion extends along a direction perpendicular to the third upper surface of the conductive paste application portion. The high-frequency module according to Claim 5.

7. Around each of the four corner portions of the third upper surface of the conductive paste application portion, another semiconductor element mounting portion, which is a member having a fifth upper surface for supporting the first bottom surface of the semiconductor element, is provided. A holding portion for holding the semiconductor element is provided on the fifth upper surface of the another semiconductor element mounting portion. The high-frequency module according to Claim 4.

8. The shape of the semiconductor element in a plan view is rectangular. The holding portion holds the corner portions of the semiconductor element. The high-frequency module according to Claim 7.

9. The shape of the holding portion in a plan view is L-shaped. The high-frequency module according to Claim 8.

10. The another semiconductor element mounting portion extends from the second upper surface of the substrate toward the first bottom surface of the semiconductor element. The high-frequency module according to any one of Claims 7 to 9.

11. The size of the another semiconductor element mounting portion in a plan view is smaller than the size of the conductive paste application portion in the plan view. The high-frequency module according to any one of Claims 7 to 10.

Images