Nitride semiconductor bidirectional switching device and method for manufacturing the same

Abstract

The present disclosure provides a nitride based bidirectional switching device with substrate potential management capability. The device includes a control node, a first power / load node, a second power / load node, and a main substrate, and includes a nitride-based bidirectional transistor and a substrate potential management circuit arranged to manage the potential of the main substrate. The substrate potential management circuit is implemented to force a substrate potential equal to the lower of a first source / drain and a second source / drain potential of the bidirectional transistor, regardless of which direction the bidirectional switching device is operated in. This allows for stable manipulation of the substrate potential on both directions of the bidirectional transistor for use in conducting current.

Description

Technical Field

[0001] The present invention generally relates to a nitride-based semiconductor bidirectional switching device. More specifically, the present invention relates to a nitride-based semiconductor bidirectional switching device having substrate potential management ability.

Background Art

[0002] Since GaN-based devices have low power loss and fast switching transitions, they have already been widely applied to high-frequency electrical energy conversion systems. Compared with silicon metal oxide semiconductor field effect transistors (MOSFETs), GaN high electron mobility transistors (HEMTs) have suitable quality performance indices and promising performances in high-power and high-frequency applications.

[0003] With appropriate gate structure design, a GaN HEMT device is configured to be equivalent to two transistors connected in series in the reverse direction and is used as a bidirectional transistor Qm. Compared with the conventional silicon-based configuration that requires two Si-based transistors, the GaN-based bidirectional transistor Qm has a simpler drive circuit system, lower power consumption, and a more compact size.

[0004] When the substrate of a GaN HEMT device is floating, the substrate accumulates charge during the switching process of the device, which affects the switching performance of the device and reduces the long-term reliability of the device. In a unidirectional GaN HEMT device, in order to prevent the floating of the substrate from affecting the performance and reliability of the device, it was usually necessary to keep the substrate and the source of the device at the same potential. In a bidirectional GaN HEMT device, since the source and drain of the device are switched based on the operating state of the circuit, the substrate and the source or drain terminals cannot be directly electrically connected. Therefore, for a bidirectional GaN HEMT device, it was necessary to independently control the substrate potential based on the operating state of the device and always maintain the substrate potential of the device at the lowest potential of the device. In applications on the low side, the lowest potential of the bidirectional device is system ground, and the substrate potential of the bidirectional GaN HEMT device can be directly grounded. However, in applications on the high side, the lowest potential applied by the bidirectional device may not be system ground. Therefore, the substrate potential of the bidirectional GaN HEMT device needs to be independently controlled at the lowest potential of the device.

Summary of the Invention

Problems to be Solved by the Invention

[0005] One aspect of the present disclosure provides a nitride-based bidirectional switching device having a substrate potential management capability. The device includes a control node, a first power / load node, a second power / load node, and a main substrate, and includes a nitride-based bidirectional transistor and a substrate potential management circuit configured to manage the potential of the main substrate.

[0006] The bidirectional switching device operates in a first direction in a first operating mode (the first power / load node is biased under a voltage higher than the voltage applied to the second power / load node). Also, it operates in a second direction in a second operating mode (the first power / load node is biased under a voltage lower than the voltage applied to the second power / load node).

[0007] By implementing the substrate potential management circuit, the substrate potential Vsub becomes basically equal to the lower of the potentials of the first and second power / load nodes in both the first operation mode and the second operation mode. As a result, regardless of the direction in which the bidirectional switching device is operated, the potential of the main substrate is stabilized at the lower of the potentials of the first source / drain and the second source / drain of the bidirectional transistor. Therefore, the bidirectional transistor is operated to stabilize the substrate potential in two directions and is used to conduct current.

Brief Description of the Drawings

[0008] By referring to the attached drawings in combination, the respective properties of the present disclosure can be easily understood from the following specific embodiments. It should be noted that the features are not depicted based on ratios. That is, for the sake of clarity of the present disclosure, the sizes of the respective features can be arbitrarily increased or decreased. In the following specification, the embodiments of the present disclosure will be described in more detail with reference to the drawings.

[0009] FIG. 1 is a circuit block diagram showing a bidirectional switching device having substrate potential management capabilities according to some embodiments of the present invention. FIG. 2 is a circuit diagram showing a bidirectional switching device according to some embodiments based on the circuit block diagram of FIG. 1. FIGS. 3A to 3D are operation mechanism diagrams showing the bidirectional switching device of FIG. 2. FIGS. 4 and 5A to 5D are structural diagrams showing a bidirectional switching device based on the circuit diagram of FIG. 2. FIG. 4 is a partial layout diagram showing the bidirectional switching device. FIGS. 5A to 5D are cross-sectional views taken along lines A-A', B-B', C-C', and D-D' of FIG. 4, respectively. FIGS. 6A to 6K are different process diagrams showing a method used for manufacturing a bidirectional switching device according to some embodiments of the present invention. FIG. 7 is a circuit block diagram showing a bidirectional switching device having substrate potential management capabilities according to another embodiment of the present invention. FIG. 8 is a circuit diagram showing a bidirectional switching device according to some embodiments based on the circuit block diagram of FIG. 7. FIG. 9 and FIGS. 10A through 10B are structural diagrams showing a bidirectional switching device according to an embodiment based on the circuit diagram of FIG. 8. FIG. 9 is a partial layout diagram showing the bidirectional switching device. FIGS. 10A through 10B are cross-sectional views taken along lines D-D' and E-E' of FIG. 9, respectively. FIG. 11 and FIGS. 12A through 12B are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 8. FIG. 11 is a partial layout diagram showing the bidirectional switching device. FIGS. 12A through 12B are cross-sectional views taken along lines D-D' and E-E' of FIG. 11, respectively. FIG. 13 and FIGS. 14A through 14B are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 8. FIG. 13 is a partial layout diagram showing the bidirectional switching device. FIGS. 14A through 14B are cross-sectional views taken along lines D-D' and E-E' of FIG. 13, respectively. FIG. 15 and FIGS. 16A through 16B are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 8. FIG. 15 is a partial layout diagram showing the bidirectional switching device. FIGS. 16A through 16B are cross-sectional views taken along lines D-D' and E-E' of FIG. 15, respectively. FIG. 17 and FIGS. 18A through 18B are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 8. FIG. 17 is a partial layout diagram showing the bidirectional switching device. FIGS. 18A through 18B are cross-sectional views taken along lines D-D' and E-E' of FIG. 17, respectively. FIG. 19 and FIGS. 20A through 20B are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 8. FIG. 19 is a partial layout diagram showing the bidirectional switching device. FIGS. 20A through 20B are cross-sectional views taken along lines D-D' and E-E' of FIG. 19, respectively. FIG. 21 is a circuit block diagram showing a bidirectional switching device having substrate potential management capabilities according to some embodiments of the present invention. FIG. 22 is a circuit diagram showing a bidirectional switching device according to some embodiments based on the circuit block diagram of FIG. 21. FIGS. 23A through 23D are operation mechanism diagrams showing the bidirectional switching device of FIG. 22. FIG. 24 and FIGS. 25A to 25D are structural diagrams showing a bidirectional switching device based on the circuit diagram of FIG. 22. FIG. 24 is a partial layout diagram showing the bidirectional switching device. FIGS. 25A to 25D are cross-sectional views taken along lines A-A', B-B', C-C', and D-D' of FIG. 24, respectively. FIG. 26 is a circuit block diagram showing a bidirectional switching device having substrate potential management capabilities according to another embodiment of the present invention. FIG. 27 is a circuit diagram showing a bidirectional switching device according to some embodiments based on the circuit block diagram of FIG. 26 FIGS. 28 and 29A to 29B are structural diagrams showing a bidirectional switching device according to an embodiment based on the circuit diagram of FIG. 27. FIG. 28 is a partial layout diagram showing the bidirectional switching device. FIGS. 29A to 29B are cross-sectional views taken along lines D-D' and E-E' of FIG. FIGS. 30 and 31A to 31B are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 27. FIG. 30 is a partial layout diagram showing the bidirectional switching device. FIGS. 31A to 31B are cross-sectional views taken along lines D-D' and E-E' of FIG. 28 FIGS. 32 and 33A to 33B are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 27. FIG. 32 is a partial layout diagram showing the bidirectional switching device. FIGS. 33A to 33B are cross-sectional views taken along lines D-D' and E-E' of FIG. FIGS. 34 and 35A to 35B are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 27. FIG. 34 is a partial layout diagram showing the bidirectional switching device. FIGS. 35A to 35B are cross-sectional views taken along lines D-D' and E-E' of FIG. 30 FIGS. 36 and 37A to 37B are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 27. FIG. 36 is a partial layout diagram showing the bidirectional switching device. FIGS. 37A to 37B are cross-sectional views taken along lines D-D' and E-E' of FIG. FIGS. 38 and 39A to 39B are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 27. FIG. 38 is a partial layout diagram showing the bidirectional switching device. FIGS. 39A to 39B are cross-sectional views taken along lines D-D' and E-E' of FIG. 32 FIGS. 40 and 41A to 41B are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 27. FIG. 40 is a partial layout diagram showing the bidirectional switching device. FIGS. 41A to 41B are cross-sectional views taken along lines D-D' and E-E' of FIG. FIGS. 42 and 43A to 43B are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 27. FIG. 42 is a partial layout diagram showing the bidirectional switching device. FIGS. 43A to 43B are cross-sectional views taken along lines D-D' and E-E' of FIG. 34 FIGS. 44 and 45A to 45B are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 27. FIG. 44 is a partial layout diagram showing the bidirectional switching device. FIGS. 45A to 45B are cross-sectional views taken along lines D-D' and E-E' of FIG. FIGS. 46 and 47A to 47B are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 27. FIG. 46 is a partial layout diagram showing the bidirectional switching device. FIGS. 47A to 47B are cross-sectional views taken along lines D-D' and E-E' of FIG. 36 FIGS. 48 and 49A to 49B are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 27. FIG. 48 is a partial layout diagram showing the bidirectional switching device. FIGS. 49A to 49B are cross-sectional views taken along lines D-D' and E-E' of FIG. Figures 38 and 39A through 39B are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 27. FIG. 38 is a partial layout diagram showing the bidirectional switching device. FIGS. 39A through 39B are cross-sectional views taken along lines D-D' and E-E' of FIG. 38 respectively. FIG. 40 is a circuit block diagram showing a bidirectional switching device having substrate potential management capabilities according to some embodiments of the present invention. FIG. 41 is a circuit diagram showing a bidirectional switching device according to some embodiments based on the circuit block diagram of FIG. 40. FIGS. 42A through 42D are operation mechanism diagrams showing the bidirectional switching device of FIG. 41. Figures 43 and 44A through 44E are structural diagrams showing a bidirectional switching device based on the circuit diagram of FIG. 41. FIG. 43 is a partial layout diagram showing the bidirectional switching device. FIGS. 44A through 44E are cross-sectional views taken along lines A-A', B-B', C-C', D-D', and E-E' of FIG. 43 respectively. Figures 45 and 46 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 41. FIG. 45 is a partial layout diagram showing the bidirectional switching device. FIG. 46 is a cross-sectional view taken along line E-E' of FIG. 45. Figures 47 and 48 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 41. FIG. 47 is a partial layout diagram showing the bidirectional switching device. FIG. 48 is a cross-sectional view taken along line E-E' of FIG. 47. Figures 49 and 50 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 41. FIG. 49 is a partial layout diagram showing the bidirectional switching device. FIG. 50 is a cross-sectional view taken along line E-E' of FIG. 49. Figures 51 and 52 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 41. FIG. 51 is a partial layout diagram showing the bidirectional switching device. FIG. 52 is a cross-sectional view taken along line E-E' of FIG. 51. FIG. 53 and FIG. 54 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 41. FIG. 53 is a partial layout diagram showing the bidirectional switching device. FIG. 54 is a cross-sectional view taken along line E-E' of FIG. 53. FIGS. 55A and 55B are circuit diagrams showing a bidirectional switching device according to another embodiment based on the circuit block diagram of FIG. 40. FIGS. 56A to 56D are operation mechanism diagrams showing the bidirectional switching device of FIGS. 55A / 55B. FIGS. 57 and 58A to 58D are structural diagrams showing the bidirectional switching device of the circuit diagram of FIGS. 55A / 55B. FIG. 57 is a partial layout diagram showing the bidirectional switching device. FIGS. 58A to 58D are cross-sectional views taken along lines A-A', B-B', C-C', and D-D' of FIG. 57, respectively. FIG. 59 is a partial layout diagram showing the bidirectional switching device of the circuit diagram of FIGS. 55A / 55B. FIG. 60 is a circuit block diagram showing a bidirectional switching device having substrate potential management ability according to some embodiments of the present invention. FIG. 61 is a circuit diagram showing a bidirectional switching device according to some embodiments based on the circuit block diagram of FIG. 60. FIGS. 62A to 62D are operation mechanism diagrams showing the bidirectional switching device of FIG. 61. FIGS. 63 and 64A to 64E are structural diagrams showing the bidirectional switching device based on the circuit diagram of FIG. 61. FIG. 63 is a partial layout diagram showing the bidirectional switching device. FIGS. 64A to 64E are cross-sectional views taken along lines A-A', B-B', C-C', D-D', and E-E' of FIG. 63, respectively. FIGS. 65 and 66 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 61. FIG. 65 is a partial layout diagram showing the bidirectional switching device. FIG. 66 is a cross-sectional view taken along line E-E' of FIG. 65. FIGS. 67 and 68 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 61. FIG. 67 is a partial layout diagram showing the bidirectional switching device. FIG. 68 is a cross-sectional view taken along line E-E' of FIG. 67. Figures 69 and 70 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 61. FIG. 69 is a partial layout diagram showing the bidirectional switching device. FIG. 70 is a cross-sectional view taken along line E-E' of FIG. 69. Figures 71 and 72 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 61. FIG. 71 is a partial layout diagram showing the bidirectional switching device. FIG. 72 is a cross-sectional view taken along line E-E' of FIG. 71. Figures 73 and 74 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 61. FIG. 73 is a partial layout diagram showing the bidirectional switching device. FIG. 74 is a cross-sectional view taken along line E-E' of FIG. 73. Figures 75A and 75B are circuit diagrams showing a bidirectional switching device according to another embodiment based on the circuit block diagram of FIG. 40. Figures 76A to 76D are operation mechanism diagrams showing the bidirectional switching device of FIG. 75A / FIG. 75B. Figures 77 and 78A to 78D are structural diagrams showing a bidirectional switching device based on the circuit diagram of FIG. 75A / FIG. 75B. FIG. 77 is a partial layout diagram showing the bidirectional switching device. FIGS. 78A to 78D are cross-sectional views taken along lines A-A', B-B', C-C', and D-D' of FIG. 77, respectively. FIG. 79 is a circuit block diagram showing a bidirectional switching device having substrate potential management capabilities according to some embodiments of the present invention. Figures 80A and 80B are circuit diagrams showing a bidirectional switching device according to some embodiments based on the circuit block diagram of FIG. 79. Figures 81A to 81D are operation mechanism diagrams showing the bidirectional switching device of FIG. 80A / FIG. 80B. Figures 82 and 83A to 83E are structural diagrams showing a bidirectional switching device based on the circuit diagram of FIG. 80A / FIG. 80B. FIG. 82 is a partial layout diagram showing the bidirectional switching device. FIGS. 83A to 83E are cross-sectional views taken along lines A-A', B-B', C-C', D-D', and E-E' of FIG. 82, respectively. Figures 84 and 85 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 80A / 80B. FIG. 84 is a partial layout diagram showing the bidirectional switching device. FIG. 85 is a cross-sectional view taken along line E-E' of FIG. 84. Figures 86 and 87 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 80A / 80B. FIG. 86 is a partial layout diagram showing the bidirectional switching device. FIG. 87 is a cross-sectional view taken along line E-E' of FIG. 86. Figures 88 and 89 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 80A / 80B. FIG. 88 is a partial layout diagram showing the bidirectional switching device. FIG. 89 is a cross-sectional view taken along line E-E' of FIG. 88. Figures 90 and 91 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 80A / 80B. FIG. 90 is a partial layout diagram showing the bidirectional switching device. FIG. 91 is a cross-sectional view taken along line E-E' of FIG. 90. Figures 92 and 93 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 80A / 80B. FIG. 92 is a partial layout diagram showing the bidirectional switching device. FIG. 93 is a cross-sectional view taken along line E-E' of FIG. 92. Figures 94A and 94B are circuit diagrams showing other bidirectional switching devices according to several embodiments based on the circuit block diagram of FIG. 79. Figures 95A to 95D are operation mechanism diagrams showing the bidirectional switching device of FIGS. 94A / 94B. Figures 96 and 97A to 97D are structural diagrams showing a bidirectional switching device based on the circuit diagrams of FIGS. 94A / 94B. FIG. 96 is a partial layout diagram showing the bidirectional switching device. FIGS. 97A to 97D are cross-sectional views taken along lines A-A', B-B', C-C', and D-D' of FIG. 96, respectively. Figures 98 and 99 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 80A / 80B. FIG. 98 is a partial layout diagram showing the bidirectional switching device. FIG. 99 is a cross-sectional view taken along line D-D' of FIG. 98. Figures 100 and 101 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 80A / 80B. FIG. 100 is a partial layout diagram showing the bidirectional switching device. FIG. 101 is a cross-sectional view taken along line D-D' of FIG. 100. Figures 102 and 103 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 80A / 80B. FIG. 102 is a partial layout diagram showing the bidirectional switching device. FIG. 103 is a cross-sectional view taken along line D-D' of FIG. 102. Figures 104 and 105 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 80A / 80B. FIG. 104 is a partial layout diagram showing the bidirectional switching device. FIG. 105 is a cross-sectional view taken along line D-D' of FIG. 104. Figures 106 and 107 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 80A / 80B. FIG. 106 is a partial layout diagram showing the bidirectional switching device. FIG. 107 is a cross-sectional view taken along line D-D' of FIG. 106. FIG. 108 is a circuit block diagram showing a bidirectional switching device having substrate potential management capabilities according to some embodiments of the present invention. FIGS. 109A and 109B are circuit diagrams showing a bidirectional switching device according to some embodiments based on the circuit block diagram of FIG. 108. FIGS. 110A to 110D are operation mechanism diagrams showing the bidirectional switching device of FIGS. 109A / 109B. FIGS. 111 and 112A to 112E are structural diagrams showing a bidirectional switching device based on the circuit diagrams of FIGS. 109A / 109B. FIG. 111 is a partial layout diagram showing the bidirectional switching device. FIGS. 112A to 112E are cross-sectional views taken along lines A-A', B-B', C-C', D-D', and E-E' of FIG. 111, respectively. Figures 113 and 114 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 109A / 109B. FIG. 113 is a partial layout diagram showing the bidirectional switching device. FIG. 114 is a cross-sectional view taken along line E-E' of FIG. 113. Figures 115 and 116 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 109A / 109B. FIG. 115 is a partial layout diagram showing the bidirectional switching device. FIG. 116 is a cross-sectional view taken along line E-E' of FIG. 115. Figures 117 and 118 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 109A / 109B. FIG. 117 is a partial layout diagram showing the bidirectional switching device. FIG. 118 is a cross-sectional view taken along line E-E' of FIG. 117. Figures 119 and 120 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 109A / 109B. FIG. 119 is a partial layout diagram showing the bidirectional switching device. FIG. 120 is a cross-sectional view taken along line E-E' of FIG. 119. Figures 121 and 122 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 109A / 109B. FIG. 121 is a partial layout diagram showing the bidirectional switching device. FIG. 122 is a cross-sectional view taken along line E-E' of FIG. 121. Figures 123A and 123B are circuit diagrams showing other bidirectional switching devices according to some embodiments based on the circuit block diagram of FIG. 79. Figures 124A to 124D are operation mechanism diagrams showing the bidirectional switching device of FIGS. 123A / 123B. Figures 125 and 126A to 126D are structural diagrams showing a bidirectional switching device based on the circuit diagrams of FIGS. 123A / 123B. FIG. 125 is a partial layout diagram showing the bidirectional switching device. FIGS. 126A to 126D are cross-sectional views taken along lines A-A', B-B', C-C', and D-D' of FIG. 125, respectively. Figures 127 and 128 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 80A / 80B. FIG. 127 is a partial layout diagram showing the bidirectional switching device. FIG. 128 is a cross-sectional view taken along line D-D' of FIG. 127. FIG. 129 and FIG. 130 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 80A / 80B. FIG. 129 is a partial layout diagram showing the bidirectional switching device. FIG. 130 is a cross-sectional view taken along line D-D' of FIG. 129. FIG. 131 and FIG. 132 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 80A / 80B. FIG. 131 is a partial layout diagram showing the bidirectional switching device. FIG. 132 is a cross-sectional view taken along line D-D' of FIG. 131. FIG. 133 and FIG. 134 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 80A / 80B. FIG. 133 is a partial layout diagram showing the bidirectional switching device. FIG. 134 is a cross-sectional view taken along line D-D' of FIG. 133. FIG. 135 and FIG. 136 are structural diagrams showing a bidirectional switching device according to another embodiment based on the circuit diagrams of FIGS. 80A / 80B. FIG. 135 is a partial layout diagram showing the bidirectional switching device. FIG. 136 is a cross-sectional view taken along line D-D' of FIG. 135.

DETAILED DESCRIPTION OF THE INVENTION

[0010] In the drawings and the specific embodiments, common reference numerals are used to indicate the same or similar members. The embodiments of the present disclosure can be easily understood based on the following detailed description combined with the accompanying drawings.

[0011] Terms such as "above", "below", "upward", "left", "right", "downward", "upper", "bottom", "vertical", "horizontal", "side", "high", "low", "upper", "on", "under", etc., which specify a space with respect to a certain member or group of members, or a certain plane of a member or group of members, are used to indicate the orientation of one or more members shown in the relevant drawings. Incidentally, the description of the space used in this specification is only for the purpose of illustration, and the actual implementation method of the structure described in this specification can be arranged in space in any orientation or form, on the premise that the advantages of the embodiments of the present disclosure do not deviate due to such an arrangement.

[0012] Also, it should be noted here that in an actual device, due to the manufacturing conditions of the device, the actual shapes of various structures depicted to approximate a rectangle may be curved, have circular edges, have a slightly non-uniform thickness, etc. Straight lines and right angles are used for the convenience of representing layers and features.

[0013] In the following description, the manufacturing methods of semiconductor devices / dies / packages and the like are taken as priority examples. Those skilled in the art to which this belongs can easily understand that modifications including additions and / or substitutions can be made without departing from the scope and spirit of the present disclosure. Specific details can be omitted so as not to make the present disclosure unclear. However, the description of the present disclosure enables those skilled in the art to practice the teachings in this specification without undue experimentation.

[0014] FIG. 1 is a circuit block diagram showing a bidirectional switching device 1 having substrate potential management capabilities according to some embodiments of the present invention.

[0015] As shown in FIG. 1, the bidirectional switching device 1 has a control node CTRL, a first power / load node P / L1, a second power / load node P / 2, a reference node REF, and a main substrate.

[0016] The bidirectional switching device 1 includes a nitride-based bidirectional transistor Qm and a substrate potential management circuit configured to manage the potential of the main substrate of the bidirectional switching device 1.

[0017] The bidirectional transistor Qm has a control node electrically connected to a main gate terminal Gm, a first source / drain terminal S / D1 electrically connected to the first power / load node, a second source / drain terminal S / D2 electrically connected to the second power / load node, and a main substrate terminal SUB electrically connected to the main substrate.

[0018] The first source / drain terminal S / D1 and the second source / drain terminal S / D2 are determined to be the source or the drain according to the direction of the current flowing between them. For example, when the current flows from S / D1 to S / D2, the terminal S / D1 becomes the source, and the terminal S / D2 becomes the drain of the bidirectional transistor Qm. On the other hand, when the current flows from S / D2 to S / D1, the terminal S / D1 becomes the drain, and S / D2 becomes the source of the bidirectional transistor Qm.

[0019] When the bidirectional switching device operates in the first direction in the first operation mode (the first power / load node is biased under a voltage higher than the voltage applied to the second power / load node), when the bidirectional transistor Qm is switched on, a current flows from the first source / drain terminal to the second source / drain terminal. For example, in the application on the high side, the first power / load node of the bidirectional switching device is connected to the power supply device, and the aforementioned second power / load is connected to the load.

[0020] Instead, when the bidirectional switching device operates in the second direction in the second operation mode (the second power / load node is biased under a voltage higher than the voltage applied to the first power / load node), when the bidirectional transistor Qm is switched on, a current flows from the second source / drain terminal to the first source / drain terminal. For example, in the application on the high side, the first power / load node of the bidirectional switching device is connected to the load, and the aforementioned second power / load is connected to the power supply device.

[0021] The substrate potential management circuit includes a first potential stabilizing element F1. The first potential stabilizing element F1 has a control terminal electrically connected to the control node, a first conducting terminal electrically connected to the first power / load node, a second conducting terminal electrically connected to the main substrate, and a substrate terminal electrically connected to the main substrate.

[0022] The substrate potential management circuit further includes a second potential stabilizing element F2. The second potential stabilizing element F2 has a control terminal electrically connected to a control node, a first conductive terminal electrically connected to a second power / load node, a second conductive terminal electrically connected to the main substrate, and a substrate terminal electrically connected to the main substrate.

[0023] The main substrate is electrically connected to a third potential stabilizing element F3 via a reference node.

[0024] When a high-level voltage is applied to the control node, the first potential stabilizing element F1 has a first resistance lower than the third resistance of the third potential stabilizing element F3, and the second potential stabilizing element F2 has a second resistance lower than the third resistance. The potential of the main substrate basically becomes equal to the lower one of the potentials of the first and second power / load nodes.

[0025] When a low-level voltage is applied to the control node, the first resistance becomes higher than the third resistance, and the second resistance becomes higher than the third resistance. The potential of the main substrate basically becomes equal to the ground potential.

[0026] FIG. 2 is a circuit diagram showing a bidirectional switching device 11 according to some embodiments based on the circuit block diagram of FIG. 1. Referring to FIG. 2, the first potential stabilizing element F1 includes a first substrate coupling transistor Q1. The first substrate coupling transistor Q1 has a first gate terminal G1 electrically connected to a control node, a first drain terminal D1 electrically connected to a first power / load node, and a first source terminal S1 electrically connected to the main substrate.

[0027] The second potential stabilizing element F2 includes a second substrate coupling transistor Q2. The second substrate coupling transistor Q2 has a second gate terminal G2 electrically connected to a control node, a second drain terminal D2 electrically connected to a second source / drain terminal S / D2, and a second source terminal S2 electrically connected to the main substrate.

[0028] The first-substrate coupling transistor Q1 and the second-substrate coupling transistor Q2 are composed of transistors of each type, including, but not limited to, GaN HEMT, Si MOSFET, insulated gate bipolar transistor (IGBT), junction gate field effect transistor (JFET), and static induction transistor (SIT).

[0029] The third potential stabilizing element F3 is a resistor R1, and the resistor R1 has a first terminal connected to the main substrate via a reference node and a second terminal connected to the ground.

[0030] The resistor R1 selectively has a resistance value much higher than the on-resistance of the first-substrate coupling transistor and the on-resistance of the second-substrate coupling transistor.

[0031] The resistor R1 selectively has a resistance value much lower than the off-resistance of the first-substrate coupling transistor and the off-resistance of the second-substrate coupling transistor.

[0032] For example, the resistor R1 selectively has a resistance value within the range of about 0.1 Ω to about 1 GΩ.

[0033] FIGS. 3A and 3B are operation mechanism diagrams showing the bidirectional switching device 11 of FIG. 2 in a first operation mode (biased with a higher voltage V L than voltage V H ).

[0034] Referring to FIG. 3A. When a high-level voltage V ON is applied to the control node such that the bidirectional transistor Qm, the first-substrate coupling transistor Q1, and the second-substrate coupling transistor Q2 have gate-source voltages equal to or higher than their respective threshold voltages, the bidirectional transistor Qm, the first-substrate coupling transistor Q1, and the second-substrate coupling transistor Q2 are turned on, and the potential Vsub of the substrate is calculated by the following formula: Vsub = VL +Vm,on*Rs2,on / (Rs2,on +Rs1,on). Here, Rs1,on represents the on-resistance of the first substrate coupling transistor Q1, Rs2,on represents the on-resistance of the second substrate coupling transistor Q2, and Vm,on represents the drain-source voltage when the bidirectional transistor Qm is turned on. Since Vm,on is extremely small and the on-resistances Rs1,on and Rs2,on are much larger than the resistor R, the potential Vsub of the substrate is basically equal to V L +Vm,on.

[0035] Refer to FIG. 3B. When a low-level voltage is applied to the control node such that the bidirectional transistor Qm, the first substrate coupling transistor Q1, and the second substrate coupling transistor Q2 each have a gate-source voltage lower than their threshold voltages, the bidirectional transistor Qm, the first substrate coupling transistor Q1, and the second substrate coupling transistor Q2 turn off. Then, the potential Vsub of the substrate is calculated by the following equation: Vsub = Vm,off*R / (Rs1,off+R). Here, R represents the resistance of the resistor R1, Rs1,off represents the off-resistance of the first substrate coupling transistor Q1, and Vm,off represents the drain-source voltage when the bidirectional transistor Qm is turned off. Since the off-resistance Rs1,off of the first substrate coupling transistor Q1 is much larger than the resistor R, the potential Vsub of the substrate is basically equal to 0V, i.e., the ground potential.

[0036] FIGS. 3C and 3D are operational mechanism diagrams showing the bidirectional switching device 11 of FIG. 2 in the second operating mode (where the second power / load node is biased under a voltage V L higher than the voltage V H applied to the first power / load node).

[0037] Refer to FIG. 3C. The high-level voltage V ONWhen applied to the control node such that the bidirectional transistor Qm, the first substrate coupling transistor Q1, and the second substrate coupling transistor Q2 have gate-source voltages equal to or higher than their respective threshold voltages, the bidirectional transistor Qm, the first substrate coupling transistor Q1, and the second substrate coupling transistor Q2 are turned on, and the potential Vsub of the substrate is calculated by the following formula: Vsub = V L +Vm,on*Rs1,on / (Rs1,on +Rs2,on). Since Vm,on is extremely small and the on-resistances Rs1,on and Rs2,on are much larger than the resistor R, the potential Vsub of the substrate is basically equal to V L +Vm,on.

[0038] Refer to FIG. 3D. When a low-level voltage is applied to the control node such that the bidirectional transistor Qm, the first substrate coupling transistor Q1, and the second substrate coupling transistor Q2 have gate-source voltages lower than their respective threshold voltages, the bidirectional transistor Qm, the first substrate coupling transistor Q1, and the second substrate coupling transistor Q2 are turned off. Then, the potential Vsub of the substrate is calculated by the following formula: Vsub = Vm,off*R / (Rs2,off+R). Here, Rs2,off represents the off-resistance of the second substrate coupling transistor Q2. Since the off-resistance Rs2,off of the second substrate coupling transistor Q2 is much larger than the resistor R, the potential Vsub of the substrate is basically equal to 0V, that is, the ground potential.

[0039] An integrated circuit (IC) chip is formed by integrating the nitride-based bidirectional transistor Qm with the first potential stabilizing element F1, the second potential stabilizing element F2, and the third potential stabilizing element F3. Thereby, the bidirectional switching device 11 of FIG. 2 is formed by integrating the nitride-based bidirectional transistor Qm, the first substrate coupling transistor Q1, and the second substrate coupling transistor Q2 in the IC chip.

[0040] Figures 4 and 5A through 5D are structural diagrams showing the bidirectional switching device 11 based on the circuit diagram of FIG. 2. FIG. 4 is a partial layout diagram showing the bidirectional switching device 11 showing the relationship of some elements constituting a part of the transistors in the bidirectional switching device 11. FIGS. 5A through 5D are cross-sectional views taken along lines A-A', B-B', C-C', and D-D' of FIG. 4, respectively. Hereinafter, more details of the structure of the bidirectional switching device 11 are provided.

[0041] Referring to FIGS. 4 and 5A through 5D, the bidirectional switching device 11 includes a substrate 102, a first nitride-based semiconductor layer 104, a second nitride-based semiconductor layer 106, a gate structure 110, S / D electrodes 116, a first passivation layer 124, a second passivation layer 126, a third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more second conductive traces 146, a protective layer 154, one or more gallium through vias (TGVs) 162, and conductive pads 170.

[0042] The substrate 102 is a semiconductor substrate. Exemplary materials for the substrate 102 include, for example, Si, SiGe, SiC, gallium arsenide, p-doped Si, n-doped Si, sapphire, semiconductor on insulator (e.g., SOI (silicon on insulator)), or other suitable semiconductor materials, but are not limited thereto. In some embodiments, the substrate 102 includes, for example, group 3 elements, group 4 elements, group 5 elements, or combinations thereof (e.g., III-V compounds), but is not limited thereto. In other embodiments, the substrate 102 includes, for example, one or more other features, but is not limited thereto. For example, doped regions, buried layers, epitaxial (epi) layers, or combinations thereof.

[0043] The nitride-based semiconductor layer 104 is disposed on the substrate 102. Exemplary materials for the nitride-based semiconductor layer 104 include, for example, nitrides or III-V compounds, but are not limited thereto. For example, GaN, AlN, InN, In x Al y Ga (1-x-y) N (where x + y ≦ 1), Al y Ga (1-y) N (where y ≦ 1) are included. Exemplary structures for the nitride-based semiconductor layer 104 include, for example, a multilayer structure, a superlattice structure, and a composition gradient structure, but are not limited thereto.

[0044] The nitride-based semiconductor layer 106 is disposed on the nitride-based semiconductor layer 104. Exemplary materials for the nitride-based semiconductor layer 106 include, for example, nitrides or III-V compounds, but are not limited thereto. For example, GaN, AlN, InN, In x Al y Ga (1-x-y) N (where x + y ≦ 1), Al y Ga (1-y) N (where y ≦ 1) are included.

[0045] By selecting the exemplary materials for the nitride-based semiconductor layers 104 and 106, the nitride-based semiconductor layer 106 has a larger bandgap (i.e., forbidden bandwidth) than the nitride-based semiconductor layer 104, whereby the electron affinities are different from each other and a heterojunction is formed therebetween. For example, when the nitride-based semiconductor layer 104 is an undoped GaN layer having a bandgap of about 3.4 eV, an AlGaN layer having a bandgap of about 4.0 eV is selected as the nitride-based semiconductor layer 106. Thereby, the nitride-based semiconductor layers 104 and 106 become a channel layer and a barrier layer, respectively. A triangular well-type potential is generated at the junction interface between the channel layer and the barrier layer, electrons accumulate in the triangular well-type potential, and a two-dimensional electron gas (2DEG) region adjacent to the heterojunction is generated. Thereby, the bidirectional switching device is used to include one or more GaN-based high electron mobility transistors (HEMTs).

[0046] In some embodiments, the bidirectional switching device 11 further includes a buffer layer, a nucleation layer, or a combination thereof (not shown). The buffer layer is disposed between the substrate 102 and the nitride semiconductor layer 104. The buffer layer is arranged to reduce the lattice and thermal mismatch between the substrate 102 and the nitride semiconductor layer 104, thereby curing defects caused by the mismatch / difference. The buffer layer includes a group III-V compound. Examples of the group III-V compound include, but are not limited to, aluminum, gallium, indium, nitrogen, or a combination thereof. Therefore, exemplary materials for the buffer layer further include, but are not limited to, GaN, AlN, AlGaN, InAlGaN, or a combination thereof.

[0047] The nucleation layer is formed between the substrate 102 and the buffer layer. The nucleation layer is arranged to transition to conform to the mismatch / difference between the substrate 102 and the group III-nitride layer of the buffer layer. Exemplary materials for the nucleation layer include, but are not limited to, one of AlN or its alloys.

[0048] The gate structure 110 is disposed on / above / over the second nitride semiconductor layer. Each gate structure 110 includes an optional gate semiconductor layer 112 and a gate metal layer 114. The gate semiconductor layer 112 and the gate metal layer 114 are stacked on the nitride semiconductor layer 106. The gate semiconductor layer 112 is interposed between the nitride semiconductor layer 106 and the gate metal layer 114. The gate semiconductor layer 112 and the gate metal layer 144 form a Schottky barrier. In some embodiments, the bidirectional switching device 11 further includes an optional dielectric layer (not shown) between the p-type doped group III-V compound semiconductor layer 112 and the gate metal layer 114.

[0049] The nitride-based bidirectional transistor Qm, the first substrate coupling transistor Q1, and the second substrate coupling transistor Q2 are enhancement-mode devices, and the enhancement-mode devices are in a normally-off state when their gate electrode 114 is at about zero bias. Specifically, the gate semiconductor layer 112 is a p-type doped III-V compound semiconductor layer. The p-type doped III-V compound semiconductor layer 112 generates at least one pn junction with the nitride-based semiconductor layer 106 to deplete the 2DEG region, and has characteristics different from the remaining part of the 2DEG region (for example, different electron concentrations) in at least one region of the 2DEG region corresponding to the position below the corresponding gate structure 110, and is blocked thereby. By such a mechanism, the bidirectional switching device 11 has normally-off characteristics. In other words, when no voltage is applied to the gate electrode 114, or when the voltage applied to the gate electrode 114 is smaller than the threshold voltage (that is, the minimum voltage required to form an inversion layer below the gate structure 110), the region of the 2DEG region below the gate structure 110 is maintained in a blocked state, and thereby current cannot pass through it. Further, by providing the p-type doped III-V compound semiconductor layer 112, the gate leakage current is reduced, and the threshold voltage during the off state period is increased.

[0050] In some embodiments, the p-type doped III-V compound semiconductor layer 112 can be omitted, and the bidirectional switching device 11 is a depletion-mode device, which means that the transistor is in a normally-on state under a zero gate-source voltage.

[0051] Exemplary materials for the p-type doped III-V compound semiconductor layer 112 include, for example, but are not limited to, p-doped III-V nitride semiconductor materials. For example, it includes p-type GaN, p-type AlGaN, p-type InN, p-type AlInN, p-type InGaN, p-type AlInGaN, or combinations thereof. In some embodiments, for example, p-type dopants such as Be, Mg, Zn, Cd, and Mg are used to realize the p-doped material.

[0052] In some embodiments, the nitride semiconductor layer 104 comprises undoped GaN, the nitride semiconductor layer 106 comprises AlGaN, the p-type doped group III-V compound semiconductor layer 112 is a p-type GaN layer, and the p-type GaN layer curves the bottom band structure upward and depletes the corresponding region of the 2DEG region, thereby placing the bidirectional switching device 11 in an off-state condition.

[0053] In some embodiments, the gate electrode 114 comprises a metal or a metal compound. The gate electrode 114 is formed as a single layer or as multiple layers having the same or different compositions. Exemplary materials for the metal or metal compound include, for example, W, Au, Pd, Ti, Ta, Co, Ni, Pt, Mo, TiN, TaN, Si, their metal alloys, or compounds, or other metal compounds, but are not limited thereto. In some embodiments, exemplary materials for the gate electrode 114 include, for example, nitrides, oxides, silicides, doped semiconductors, or combinations thereof, but are not limited thereto.

[0054] In some embodiments, the optional dielectric layer is formed of a single layer or a greater number of layers of dielectric material. Exemplary dielectric materials include, for example, one or more oxide layers, SiO x layers, SiN x layers, high-k dielectric materials (e.g., HfO2, Al2O3, TiO2, HfZrO, Ta2O3, HfSiO4, ZrO2, ZrSiO2, etc.), or combinations thereof, but are not limited thereto.

[0055] The S / D electrodes 116 are disposed on the nitride semiconductor layer 106. The "S / D" electrodes mean that each S / D electrode 116 serves as a source electrode or a drain electrode depending on the device design. The S / D electrodes 116 are located at both sides opposite to the corresponding gate structure 110, provided that other configurations may be used, particularly when a plurality of source electrodes, drain electrodes, or gate electrodes are employed in the device. Each gate structure 110 is arranged such that each gate structure 110 is positioned between at least two of the S / D electrodes 116. The gate structure 110 and the S / D electrodes 116 are both formed of at least one nitride-based / GaN-based HEMT having a 2DEG region.

[0056] In the exemplary drawing, the adjacent S / D electrodes 116 are symmetric with respect to the gate structure 110 therebetween. In some embodiments, the adjacent S / D electrodes 116 may alternatively be asymmetric with respect to the gate structure 110 therebetween. That is, one of the S / D electrodes 116 is closer to the gate structure 110 than the other one of the S / D electrodes 116.

[0057] In some embodiments, the S / D electrodes 116 may include, for example, metals, alloys, doped semiconductor materials (e.g., doped crystalline silicon), compounds such as silicides and nitrides, other conductive materials, or combinations thereof, but are not limited thereto. Exemplary materials for the S / D electrodes 116 include, for example, Ti, AlSi, TiN, or combinations thereof, but are not limited thereto. The S / D electrodes 116 may be a single layer or multiple layers having the same or different compositions. In some embodiments, the S / D electrodes 116 form an ohmic contact with the nitride-based semiconductor layer 106. The ohmic contact is realized by applying Ti, Al, or other compatible materials to the S / D electrodes 116. In some embodiments, each S / D electrode 116 is formed by at least one conformal layer and a conductive filler. The conformal layer can cover the conductive filler. Exemplary materials for the conformal layer include, for example, Ti, Ta, TiN, Al, Au, AlSi, Ni, Pt, or combinations thereof, but are not limited thereto. Exemplary materials for the conductive filler include, for example, AlSi, AlCu, or combinations thereof, but are not limited thereto.

[0058] The passivation layer 124 is disposed on the nitride-based semiconductor layer 106. The passivation layer 124 is formed for protection purposes or to enhance the electrical properties of the device (e.g., by providing an electrical insulation effect between / during different layers / elements). The passivation layer 124 covers the upper surface of the nitride-based semiconductor layer 106. The passivation layer 124 may cover the gate structure 110. The passivation layer 124 can cover at least two sidewalls opposite to the gate structure 110. The S / D electrodes 116 penetrate / pass through the passivation layer 124 to contact the nitride-based semiconductor layer 106. Exemplary materials for the passivation layer 124 include, for example, SiN x , SiO x, Si3N4, SiON, SiC, SiBN, SiCBN, oxides, nitrides, poly(2-ethyl-2-oxazoline) (PEOX), or combinations thereof, although not limited thereto. In some embodiments, the passivation layer 124 may have a multilayer structure, for example, an Al2O3 / SiN, Al2O3 / SiO2, AlN / SiN, AlN / SiO2, or a composite dielectric layer combining them may also be used.

[0059] The passivation layer 126 is disposed above the passivation layer 124 and the S / D electrodes 116. The passivation layer 126 covers the passivation layer 124 and the S / D electrodes 116. The passivation layer 126 serves as a planarization layer, and the planarization layer has a horizontal upper surface for supporting other layers / elements. Exemplary materials for the passivation layer 126 include, for example, SiN x , SiO x , Si3N4, SiON, SiC, SiBN, SiCBN, oxides, PEOX, or combinations thereof, although not limited thereto. In some embodiments, the passivation layer 126 has a multilayer structure, for example, an Al2O3 / SiN, Al2O3 / SiO2, AlN / SiN, AlN / SiO2, or a composite dielectric layer combining them.

[0060] The conductive via 132 is disposed within the passivation layer 126 and the passivation layer 124. The conductive via 132 penetrates the passivation layer 126 and the passivation layer 124. The conductive via 132 extends in the vertical direction and is electrically coupled to the gate structure 110 and the S / D electrodes 116 respectively. The upper surface of the conductive via 132 is not covered by the passivation layer 126. Exemplary materials for the conductive via 132 include, for example, conductive materials such as metals or alloys, although not limited thereto.

[0061] The conductive trace 142 is disposed on the passivation layer 126 and the conductive via 132. The conductive trace 142 is in contact with the conductive via 132. The conductive trace 142 is formed by patterning a conductive layer disposed on the passivation layer 126 and the conductive via 132. Exemplary materials for the conductive trace 142 include, for example, but are not limited to, conductive materials. The conductive trace 142 comprises a single film or a multilayer film having Ag, Al, Cu, Mo, Ni, their alloys, their oxides, their nitrides, or combinations thereof.

[0062] The passivation layer 128 is disposed above the passivation layer 126 and the conductive trace 142. The passivation layer 128 covers the passivation layer 126 and the conductive trace 142. The passivation layer 128 can be a planarization layer, and the planarization layer has a horizontal upper surface for supporting other layers / elements. Exemplary materials for the passivation layer 128 include, for example, SiN x , SiO x , Si3N4, SiON, SiC, SiBN, SiCBN, oxides, PEOX, or combinations thereof, but are not limited thereto. In some embodiments, the passivation layer 128 is a multilayer structure, for example, an Al2O3 / SiN, Al2O3 / SiO2, AlN / SiN, AlN / SiO2, or a composite dielectric layer in which they are combined.

[0063] The conductive via 136 is disposed within the passivation layer 128. The conductive via 136 penetrates the passivation layer 128. The conductive via 136 extends longitudinally and is electrically coupled to the conductive trace 142. The upper surface of the conductive via 136 is not covered by the passivation layer 136. Exemplary materials for the conductive via 136 include, for example, but are not limited to, conductive materials such as metals or alloys.

[0064] The conductive trace 146 is disposed on the passivation layer 128 and the conductive via 136. The conductive trace 146 is in contact with the conductive via 136. The conductive trace 146 is formed by patterning a conductive layer disposed on the passivation layer 128 and the conductive via 136. Exemplary materials for the conductive layer 146 include, for example, but are not limited to, conductive materials. The conductive layer 146 has a single film or a multilayer film including Ag, Al, Cu, Mo, Ni, their alloys, their oxides, their nitrides, or combinations thereof.

[0065] The TGV 162 is formed to extend longitudinally from the second conductive layer 146 and penetrate into the substrate 102. The upper surface of the TGV 162 is not covered by the third passivation layer 128. In some embodiments, the TGV 162 is formed to extend longitudinally from the first conductive layer 142 and penetrate into the substrate 102. The upper surface of the TGV 162 is not covered by the second passivation layer 126. Exemplary materials for the TGV 162 include, for example, but are not limited to, conductive materials such as metals or alloys.

[0066] The protective layer 154 is disposed above the passivation layer 128 and the conductive layer 146. The protective layer 154 covers the passivation layer 128 and the conductive layer 146. The protective layer 154 prevents oxidation of the conductive layer 146. Some portions of the conductive layer 146 are exposed from the openings in the protective layer 154 to form conductive pads 170, and the conductive pads 170 are arranged to be electrically connected to external elements (e.g., external circuits).

[0067] The conductive pads 170 include a control pad CTRL arranged as a control node, a first power / load pad P / L1 arranged as a first power / load node, a second power / load pad P / L2 arranged as a second power / load node, and a reference pad REF arranged as a reference node.

[0068] The conductive traces 142 or 146, the conductive vias 132 or 136, and the TGV 162 are electrically connected to different layers / elements and arranged to form a nitride-based bidirectional transistor Qm, a first substrate coupling transistor Q1, and a second substrate coupling transistor Q2.

[0069] Referring to FIG. 5A. The S / D electrodes 116 include at least one first S / D electrode 116a, and the first S / D electrode 116a is electrically connected to a first power / load pad and arranged as the first source / drain terminal of the nitride-based bidirectional transistor Qm and the drain terminal of the first substrate coupling transistor Q1.

[0070] The first S / D electrode 116a is connected to the first power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0071] In this exemplary structure, the same S / D electrode is shared by the nitride-based bidirectional transistor Qm and the first substrate coupling transistor Q1, enabling the chip size to be minimized. In some embodiments, different S / D electrodes are used as the first source / drain terminal of the nitride-based bidirectional transistor Qm and the drain terminal of the first substrate coupling transistor Q1.

[0072] Referring to FIG. 5B. The gate structure 110 includes at least one first gate structure 110a, and the first gate structure 110a is electrically connected to a control pad and arranged as the main gate terminal of the nitride-based bidirectional transistor Qm. The first gate structure 110a is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0073] The gate structure 110 further includes at least one second gate structure 110b, and the second gate structure 110b is electrically connected to a control pad and is arranged as a gate terminal of the first substrate coupling transistor Q1. The second gate structure 110b is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0074] The gate structure 110 further includes at least one third gate structure 110c, and the third gate structure 110c is electrically connected to a control pad and is arranged as a gate terminal of the second substrate coupling transistor Q2. The third gate structure 110c is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0075] Referring to FIG. 5C. The S / D electrode 116 includes at least one second S / D electrode 116b, and the second S / D electrode 116b is electrically connected to a second power / load pad and is arranged as a second source / drain terminal of the nitride-based bidirectional transistor Qm and a drain terminal of the second substrate coupling transistor Q2. The second S / D electrode 116b is connected to the second power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0076] In this exemplary structure, the same S / D electrode is shared by the nitride-based bidirectional transistor Qm and the second substrate coupling transistor Q2, enabling the chip size to be minimized. In some embodiments, different S / D electrodes are used as the second source / drain terminal of the nitride-based bidirectional transistor Qm and the drain terminal of the second substrate coupling transistor Q2.

[0077] Refer to FIG. 5D. The S / D electrode 116 includes at least one third S / D electrode 116c, and the third S / D electrode 116c is electrically connected to the substrate 102 and the reference pad and is arranged as the source terminal of the first substrate coupling transistor Q1. The third S / D electrode 116c is electrically connected to the substrate through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The third S / D electrode 116c is further electrically connected to the reference pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0078] Refer to FIG. 5D. The S / D electrode 116 includes at least one fourth S / D electrode 116d, and the fourth S / D electrode 116d is electrically connected to the substrate and the reference pad and is arranged as the source terminal of the second substrate coupling transistor Q2. The fourth S / D electrode 116d is electrically connected to the substrate through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The fourth S / D electrode 116d is further electrically connected to the reference pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0079] Preferably, the second S / D electrode 116b is adjacent to the first S / D electrode 116a, and the first gate structure 110a is interposed between the first S / D electrode 116a and the second S / D electrode 116b.

[0080] Preferably, the third S / D electrode 116c is adjacent to the first S / D electrode 116a, and the second gate structure 110b is interposed between the first S / D electrode 116a and the third S / D electrode 116c.

[0081] Preferably, the fourth S / D electrode 116d is adjacent to the second S / D electrode 116b, and the third gate structure 110c is interposed between the second S / D electrode 116b and the fourth S / D electrode 116d.

[0082] As shown in FIGS. 6A through 6K, the following description is for explaining different processes of a method for manufacturing the bidirectional switching device 11. In the following description, the deposition technology is not limited, and includes, for example, atomic layer deposition (ALD), physical vapor deposition (PVD), chemical vapor deposition (CVD), metalorganic chemical vapor deposition (MOCVD), plasma enhanced CVD (PECVD), low pressure CVD (LPCVD), plasma assisted vapor deposition, epitaxial growth, or other suitable processes. The process for forming the passivation layer as the planarization layer usually includes a chemical mechanical polishing (CMP) process. The process for forming the conductive via usually includes forming a via in the passivation layer and filling the via with a conductive material. The process for forming the conductive trace usually includes photolithography, exposure and development, etching, other suitable processes, or a combination thereof.

[0083] Referring to FIG. 6A, a substrate 102 is provided. The nitride semiconductor layers 104 and 106 are sequentially formed on the substrate 102 using the above-described deposition technology. A 2DEG region is formed at the hetero-junction interface adjacent between the first nitride semiconductor layer 104 and the second nitride semiconductor layer 106.

[0084] Referring to FIG. 6B, a p-type blanket doped III-V compound semiconductor layer 111 and a blanket gate electrode layer 113 are sequentially formed above the nitride semiconductor layer 106 using the above-described deposition technology.

[0085] Referring to FIG. 6C, a plurality of gate structures 110 are formed on the nitride semiconductor layer 106 by patterning the p-type blanket-doped III-V compound semiconductor layer 111 and the blanket gate electrode layer 113. Each gate structure 110 includes a p-type doped III-V compound semiconductor layer 112 and a gate metal layer 114. Next, the passivation layer 124 is formed so as to cover the gate structure 110 using the above-described stacking technique.

[0086] Referring to FIG. 6D, some portions of the passivation layer 124 are removed to form some S / D regions 160. At least a part of the nitride semiconductor layer 106 is exposed from the S / D regions 160. The blanket conductive layer 115 is formed so as to cover the nitride semiconductor layer 106 and the passivation layer 124 and fill the S / D regions 160, thereby being in contact with the nitride semiconductor layer 106.

[0087] Referring to FIG. 6E, the S / D electrodes 116 are formed by patterning the blanket conductive layer 115. Some portions of the blanket conductive layer 115 are removed, and the remaining portions of the blanket conductive layer 115 within the S / D regions 160 are retained as the S / D electrodes 116. Next, the passivation layer 126 is formed on the passivation layer 124 using the above-described stacking technique to cover the S / D electrodes 116.

[0088] Referring to FIG. 6F, the conductive vias 132 are formed so as to penetrate the passivation layers 126 and 124. The blanket conductive layer 141 is stacked on the passivation layer 126 using the above-described stacking technique.

[0089] Referring to FIG. 6G, the conductive traces 142 are formed by patterning the blanket conductive layer 141, and the conductive traces 142 are electrically coupled to the conductive vias 132 on the passivation layer 126. Next, the passivation layer 128 is formed on the passivation layer 126 using the above-described stacking technique to cover the conductive traces 142.

[0090] Referring to FIG. 6H, a conductive via 136 is formed in the passivation layer 128. A blanket conductive layer 145 is laminated on the passivation layer 128 using the above-described lamination technique.

[0091] Referring to FIG. 6I, a plurality of TGVs 162 can also be formed to extend from the passivation layer 128 and penetrate into the substrate before the blanket conductive layer 145 is laminated.

[0092] Referring to FIG. 6J, a conductive trace 146 is formed by patterning the blanket conductive layer 145, and the conductive trace 146 is electrically coupled to the conductive via 136 on the passivation layer 128. Then, a protective layer 154 is formed on the passivation layer 128 using the above-described lamination technique to cover the conductive trace 146.

[0093] Referring to FIG. 6K. Then, one or more openings are formed by patterning the protective layer 154 to expose one or more conductive pads 170.

[0094] Referring back to FIG. 4, the conductive pad 170 includes a control pad CTRL, a first power / load pad P / L1, a second power / load pad P / L2, and a reference pad REF.

[0095] Referring back to FIGS. 5A to 5D, the nitride-based bidirectional transistor Qm is configured by the following steps. At least one first S / D electrode is electrically connected to the first power / load pad to form the first S / D terminal of the nitride-based bidirectional transistor Qm. At least one second S / D electrode is electrically connected to the second power / load pad to form the second S / D terminal of the nitride-based bidirectional transistor Qm. And at least one first gate structure is electrically connected to the control pad to form the main gate terminal of the nitride-based bidirectional transistor Qm.

[0096] The first substrate coupling transistor Q1 is configured by the following steps. A first S / D electrode is used as the drain terminal of the first substrate coupling transistor Q1. At least one third S / D electrode is electrically connected to the substrate to form the source terminal of the first substrate coupling transistor Q1. And at least one second gate structure is electrically connected to the control pad to form the gate terminal of the first substrate coupling transistor Q1.

[0097] The second substrate coupling transistor Q2 is configured by the following steps. A second S / D electrode is used as the drain terminal of the second substrate coupling transistor Q2. At least one fourth S / D electrode is electrically connected to the substrate to form the source terminal of the second substrate coupling transistor Q2. And at least one third gate structure is electrically connected to the control pad to form the gate terminal of the second substrate coupling transistor Q2.

[0098] FIG. 7 is a circuit block diagram showing a bidirectional switching device 2 having a substrate potential management ability according to some embodiments of the present invention. The bidirectional switching device 2 is similar to the bidirectional switching device 1. For ease of understanding, the same elements in FIGS. 1 and 7 are denoted by the same reference symbols and signs, and further detailed description is omitted.

[0099] As shown in FIG. 7, different from the bidirectional switching device 1 in FIG. 1, the substrate potential management circuit of the bidirectional switching device 2 further includes a third potential stabilizing element F3, and the third potential stabilizing element F3 has a first conduction terminal connected to the main substrate and a second conduction terminal connected to the reference node.

[0100] When a high-level voltage is applied to the control node, the first potential stabilizing element F1 has a first resistance lower than the third resistance of the third potential stabilizing element F3, and the second potential stabilizing element F2 has a second resistance lower than the third resistance, and the potential of the main substrate is basically equal to the lower one of the potentials of the first power / load node and the second power / load node.

[0101] When a low-level voltage is applied to the control node, the first resistor becomes higher than the third resistor, and the second resistor becomes higher than the third resistor, and the potential of the main board becomes basically equal to the ground potential.

[0102] FIG. 8 is a circuit diagram showing a bidirectional switching device 21 according to some embodiments based on the circuit block diagram of FIG. 7. The bidirectional switching device 21 is similar to the bidirectional switching device 11 of FIG. 2. For ease of understanding, the same elements in FIGS. 2 and 8 are denoted by the same reference numerals and signs, and further detailed description is omitted.

[0103] As shown in FIG. 8, unlike the bidirectional switching device 11 of FIG. 2, the third potential stabilizing element F3 of the bidirectional switching device 21 is a resistor R1, and the resistor R1 has a first terminal connected to the main board and a second terminal connected to ground via a reference node.

[0104] Since the operation mechanism of the bidirectional switching device 21 is the same as that of the bidirectional switching device 11, FIGS. 3A to 3D can be referred to. For the sake of brevity and simplicity, further detailed description of the operation mechanism of the bidirectional switching device 21 is omitted.

[0105] The nitride-based bidirectional transistor Qm is integrated with the first potential stabilizing element F1, the second potential stabilizing element F2, and the third potential stabilizing element F3 to form an integrated circuit (IC) chip. Therefore, the bidirectional switching device 21 of FIG. 8 is formed by integrating the nitride-based bidirectional transistor Qm, the first substrate coupling transistor Q1, the second substrate coupling transistor Q2, and the resistor R1 in the IC chip.

[0106] FIG. 9 and FIGS. 10A to 10B are structural diagrams showing a bidirectional switching device 21a according to an embodiment based on the circuit diagram of FIG. 8. FIG. 9 is a partial layout diagram showing the bidirectional switching device 21a showing the relationship among some elements constituting the transistor portion and resistors in the bidirectional switching device 21a. Since the cross-sectional views along lines A-A', B-B', and C-C' of FIG. 9 are the same as the cross-sectional views along lines A-A', B-B', and C-C' of FIG. 4, FIGS. 5A to 5C can be referred to. The cross-sectional views along lines D-D' and E-E' of FIG. 9 are shown in FIGS. 10A and 10B, respectively. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 4, 5A to 5D, and FIGS. 9, 10A to 10B, and further detailed description is omitted.

[0107] Refer to FIGS. 9 and 10A to 10B. The bidirectional switching device 21a is similar to the bidirectional switching device 11, and the difference is that the bidirectional switching device 21a further includes a resistance element 180a. The resistance element 180a includes a first end 181a that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182a that is electrically connected to the reference pad and serves as the second terminal of the resistor R1.

[0108] The resistance element 180a is disposed at the same layer location in the 2DEG region adjacent to the hetero-junction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106. The first end 181a is electrically coupled to the substrate 102 via at least one ohmic contact element 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162. The second end 182a is electrically connected to the reference pad via at least one ohmic contact element 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0109] The manufacturing method of the bidirectional switching device 21a includes the steps shown in FIGS. 6A to 6K. Regarding the difference, between the steps shown in FIGS. 6A and 6B, the 2DEG region adjacent to the hetero-junction interface between the first nitride semiconductor layer 104 and the second nitride semiconductor layer 106 is patterned by ion implantation to form the resistor element 180a.

[0110] FIGS. 11 and 12A to 12B are structural diagrams showing a bidirectional switching device 21b according to another embodiment based on the circuit diagram of FIG. 8. FIG. 11 is a partial layout diagram showing the bidirectional switching device 21b showing the relationship among some elements constituting the transistor and the resistor in the bidirectional switching device 21b. Since the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 11 are the same as the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 4 respectively, FIGS. 5A to 5C can be referred to. The cross-sectional views along lines D-D' and E-E' in FIG. 11 are shown in FIGS. 12A and 12B respectively. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 4, 5A to 5D, and FIGS. 11, 12A to 12B, and further detailed description is omitted.

[0111] Refer to FIGS. 11 and 12A to 12B. The bidirectional switching device 21b is similar to the bidirectional switching device 11. Regarding the difference, the bidirectional switching device 21b further includes a resistor element 180b. The resistor element includes a first end 181b that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182b that is electrically connected to the reference pad and serves as the second terminal of the resistor R1.

[0112] The resistive element 180b is disposed on the second nitride-based semiconductor layer 106 and is fabricated from the same material as the gate structure 110. The first end 181b is electrically coupled to the substrate 102 via at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162. The second end 182b is electrically connected to a reference pad via at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0113] The manufacturing method of the bidirectional switching device 21b includes the steps shown in FIGS. 6A to 6K. Regarding the differences, in the step shown in FIG. 6C, the gate structure 110 and the resistive element 180b are simultaneously formed by patterning the blanket semiconductor layer 111 and the blanket gate electrode layer 113.

[0114] FIGS. 13 and 14A to 14B are structural diagrams showing the bidirectional switching device 21c according to an embodiment based on the circuit diagram of FIG. 8. FIG. 13 is a partial layout diagram showing the bidirectional switching device 21c showing the relationship among the transistor portion and some elements constituting the resistor in the bidirectional switching device 21c. Since the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 13 are the same as the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 4 respectively, FIGS. 5A to 5C can be referred to. The cross-sectional views along lines D-D' and E-E' in FIG. 13 are shown in FIGS. 14A and 14B respectively. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 4, 5A to 5D and FIGS. 13, 14A to 14B, and further detailed description is omitted.

[0115] Refer to FIGS. 13 and 14A to 14B. The bidirectional switching device 21c is similar to the bidirectional switching device 11, and the difference is that the bidirectional switching device 21c further includes a resistance element 180c. The resistance element is electrically connected to the substrate 102 and has a first end 181c serving as the first terminal of the resistor R1, and a second end 182c electrically connected to the reference pad and serving as the second terminal of the resistor R1.

[0116] The resistance element 180c is the first Static layer It is disposed on 124 and manufactured from the same material as the S / D electrode 116. The first end 181c is electrically coupled to the substrate 102 via at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162. The second end 182c is electrically connected to the reference pad via at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0117] The manufacturing method of the bidirectional switching device 21c includes the steps shown in FIGS. 6A to 6K. The difference is that in the step shown in FIG. 6E, the blanket conductive layer 115 is patterned to simultaneously form the S / D electrode 116 and the resistance element 180c.

[0118] FIG. 15 and FIGS. 16A to 16B are structural diagrams showing a bidirectional switching device 21d according to an embodiment based on the circuit diagram of FIG. 8. FIG. 15 is a partial layout diagram showing the bidirectional switching device 21d showing the relationship among some elements constituting the transistor portion and resistors in the bidirectional switching device 21d. Since the cross-sectional views along lines A-A', B-B', and C-C' of FIG. 15 are the same as the cross-sectional views along lines A-A', B-B', and C-C' of FIG. 4, FIGS. 5A to 5C can be referred to. The cross-sectional views along lines D-D' and E-E' of FIG. 15 are shown in FIGS. 16A and 16B, respectively. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 4, 5A to 5D, and FIGS. 15, 16A to 16B, and further detailed description is omitted.

[0119] Refer to FIGS. 15 and 16A to 16B. The bidirectional switching device 21d is similar to the bidirectional switching device 11, and the difference is that the bidirectional switching device 21d further includes a resistance element 180d. The resistance element includes a first end 181d that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182d that is electrically connected to the reference pad and serves as the second terminal of the resistor R1.

[0120] The resistance element 180d is Static layer disposed within 126. Static layer 126 is divided into a lower layer 126a below the resistance element 180d and an upper layer 126b above the resistance element 180d. In other words, the resistance element 180d is sandwiched between the first layer 126a, the lower layer 126a, and the upper layer 126b. The first end 181d is electrically coupled to the substrate 102 via at least one third conductive via 134, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162. The second end 182e is electrically connected to the reference pad via at least one third conductive via 134, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0121] The manufacturing method of the bidirectional switching device 21d includes the steps shown in FIGS. 6A to 6K. Regarding the difference, the lower immobile layer 126a is laminated on the immobile layer 124, the blanket metal / metal compound layer 143 is laminated on the immobile layer 126a and patterned to form the resistance element 180d, the upper immobile layer 126b is laminated on the lower immobile layer 126a to cover the resistance element 180d, and one or more third conductive vias 134 are formed in the upper immobile layer 126b and electrically coupled to the resistance element 180d.

[0122] FIGS. 17 and 18A to 18B are structural diagrams showing the bidirectional switching device 21e according to an embodiment based on the circuit diagram of FIG. 8. FIG. 17 is a partial layout diagram showing the bidirectional switching device 21e showing the relationship among the transistor part in the bidirectional switching device 21e and some elements constituting the resistor. Since the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 17 are the same as the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 4 respectively, FIGS. 5A to 5C can be referred to. The cross-sectional views along lines D-D' and E-E' in FIG. 17 are shown in FIGS. 18A and 18B respectively. For ease of understanding, the same reference symbols and signs are attached to the same structural elements in FIGS. 4, 5A to 5D and FIGS. 17, 18A to 18B, and further detailed description is omitted.

[0123] Refer to FIGS. 17 and 18A to 18B. The bidirectional switching device 21e is similar to the bidirectional switching device 11. Regarding the difference, the bidirectional switching device 21e further includes a resistance element 180e. The resistance element includes a first end 181e electrically connected to the substrate 102 and serving as the first terminal of the resistor R1, and a second end 182e electrically connected to the reference pad and serving as the second terminal of the resistor R1.

[0124] The resistance element 180e is disposed on the second Static layer 126 and is manufactured from the same material as the conductive trace 142. The first end 181e has at least oneThe It is electrically coupled to the substrate 102 via two conductive vias 136, at least one second conductive trace 146, and at least one TGV 162. The second end 182e is electrically connected to a reference pad via at least one second conductive via 136 and at least one second conductive trace 146.

[0125] The method of manufacturing the bidirectional switching device 21e includes the steps shown in FIGS. 6A to 6K. Regarding the differences, in the step shown in FIG. 6G, the blanket conductive layer 141 is patterned to simultaneously form the conductive trace 142 and the resistor element 180e.

[0126] FIGS. 19 and 20A to 20B are structural diagrams showing a bidirectional switching device 21f according to an embodiment based on the circuit diagram of FIG. 8. FIG. 19 is a partial layout diagram showing the bidirectional switching device 21f showing the relationship among some elements constituting the transistor and the resistor in the bidirectional switching device 21f. Since the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 19 are the same as the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 4, respectively, FIGS. 5A to 5C can be referred to. The cross-sectional views along lines D-D' and E-E' in FIG. 19 are shown in FIGS. 20A and 20B, respectively. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 4, 5A to 5D, and FIGS. 19, 20A to 20B, and further detailed description is omitted.

[0127] Referring to FIGS. 19 and 20A to 20B. The bidirectional switching device 21f is similar to the bidirectional switching device 11. Regarding the differences, the bidirectional switching device 21f further includes a resistor element 180f. The resistor element includes a first end 181f that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182f that is electrically connected to a reference pad and serves as the second terminal of the resistor R1.

[0128] The resistor element 180f is the third Static layerIt is disposed on 128 and manufactured from the same material as the conductive trace 146. The first end 181f is electrically coupled to the substrate 102 via at least one TGV 162. The second end 182f is electrically connected to a reference pad.

[0129] The manufacturing method of the bidirectional switching device 21f includes the steps shown in FIGS. 6A to 6K. Regarding the differences, in the step shown in FIG. 6J, the conductive trace 146 and the resistive element 180f are simultaneously formed by patterning the blanket conductive layer 145.

[0130] FIG. 21 is a circuit block diagram showing a bidirectional switching device 3 having substrate potential management capabilities according to some embodiments of the present invention. The bidirectional switching device 3 is similar to the bidirectional switching device 1. For ease of understanding, the same elements in FIGS. 1 and 21 are labeled with the same reference numerals and signs, and further detailed description is omitted.

[0131] As shown in FIG. 21, the bidirectional switching device 3 has a control node CTRL, a first power / load node P / L1, a second power / load node P / 2, a reference node REF, and a main substrate.

[0132] The bidirectional switching device 3 includes a nitride-based bidirectional transistor Qm and a substrate potential management circuit arranged to manage the potential of the main substrate of the bidirectional switching device 3.

[0133] The bidirectional transistor Qm has a main gate terminal Gm electrically connected to the control node, a first source / drain terminal S / D1 electrically connected to the first power / load node, a second source / drain terminal S / D2 electrically connected to the second power / load node, and a main substrate terminal SUB electrically connected to the main substrate.

[0134] The substrate potential management circuit includes a first potential stabilizing element F1. The first potential stabilizing element F1 has a control terminal electrically connected to a control node, a first conduction terminal electrically connected to a first power / load node, a second conduction terminal electrically connected to a main substrate, and a substrate terminal electrically connected to the main substrate.

[0135] The main substrate is electrically connected to a second potential stabilizing element F2 via a reference node.

[0136] When a high-level voltage is applied to the control node, the first potential stabilizing element F1 has a first resistance lower than the second resistance of the second potential stabilizing element F2, and the potential of the main substrate basically becomes equal to the lower one of the potentials of the first power / load node and the second power / load node.

[0137] When a low-level voltage is applied to the control node, the first resistance becomes higher than the second resistance, and the potential of the main substrate basically becomes equal to the ground potential.

[0138] FIG. 22 is a circuit diagram showing a bidirectional switching device 31 according to some embodiments based on the circuit block diagram of FIG. 21. Referring to FIG. 22. The first potential stabilizing element F1 includes a first substrate coupling transistor Q1. The first substrate coupling transistor Q1 has a first gate terminal G1 electrically connected to a control node, a first drain terminal D1 electrically connected to a first power / load node, and a first source terminal S1 electrically connected to a main substrate.

[0139] The first substrate coupling transistor Q1 is composed of each type of transistor, including but not limited to GaN HEMT, Si MOSFET, insulated gate bipolar transistor (IGBT), junction gate field effect transistor (JFET), and static induction transistor (SIT).

[0140] The second potential stabilizing element F2 is resistor R1, and the resistor R1 has a first terminal connected to the main substrate via a reference node and a second terminal connected to ground.

[0141] Resistor R1 selectively has a resistance value much higher than the on-resistance of the first substrate coupling transistor.

[0142] Resistor R1 selectively has a resistance value much lower than the off-resistance of the first substrate coupling transistor.

[0143] For example, resistor R1 selectively has a resistance value in the range of about 0.1 Ω to about 1 GΩ.

[0144] Figures 23A and 23B are operation mechanism diagrams showing the bidirectional switching device 31 of FIG. 22 in a first operation mode (biased with a higher voltage V L than voltage V H applied to the second power / load node).

[0145] Referring to FIG. 23A. When a high-level voltage V ON is applied to the control node to turn on the bidirectional transistor Qm and the first substrate coupling transistor Q1, the potential Vsub of the substrate is calculated by the following formula: Vsub = (V L + Vm,on)*R / (Rs1,on+R). Here, R represents the resistance of resistor R1, Rs1,on represents the on-resistance of the first substrate coupling transistor Q1, and Vm,on represents the drain-source voltage when the bidirectional transistor Qm is turned on. Since R is much larger than Rs1,on, the potential Vsub of the substrate is basically equal to V L + Vm,on.

[0146] Referring to FIG. 23B. When a low-level voltage V OFF is applied to the control node to turn off the bidirectional transistor Qm and the first substrate coupling transistor Q1, the potential Vsub of the substrate is calculated by the following formula: Vsub = (V L+ Vm,off)*R / (Rs1,off + R). Here, Rs1,off represents the off-resistance of the first substrate coupling transistor Q1, and Vm,off represents the drain-source voltage when the bidirectional transistor Qm turns off. Since Rs1,off is much larger than R, the potential Vsub of the substrate is basically equal to 0v, that is, the ground potential.

[0147] Figures 23C and 23D are operation mechanism diagrams showing the bidirectional switching device 31 of FIG. 22 in the second operation mode (the second power / load node is biased under a voltage V L higher than voltage V H below).

[0148] Referring to FIG. 23C. When a high-level voltage V ON is applied to the control node to turn on the bidirectional transistor Qm and the first substrate coupling transistor Q1, the potential Vsub of the substrate is calculated by the following formula: Vsub = V L *R / (Rs1,on + R). Since R is much larger than Rs1,on, the potential Vsub of the substrate is basically equal to the voltage V L applied to the second power / load node.

[0149] Referring to FIG. 23D. When a low-level voltage V OFF is applied to the control node to turn off the bidirectional transistor Qm and the first substrate coupling transistor Q1, the potential Vsub of the substrate is calculated by the following formula: Vsub = V L *R / (Rs1,off + R). Since Rs1,off is much larger than R, the potential Vsub of the substrate is basically equal to 0v, that is, the ground potential.

[0150] The nitride-based bidirectional transistor Qm is integrated with the first potential stabilizing element F1 and the second potential stabilizing element F2 to form an integrated circuit (IC) chip. Therefore, the bidirectional switching device 31 of FIG. 22 is formed by integrating the nitride-based bidirectional transistor Qm and the first substrate coupling transistor Q1 in the IC chip.

[0151] Figures 24 and 25A to 25D are structural diagrams showing the bidirectional switching device 31 based on the circuit diagram of FIG. 2. FIG. 24 is a partial layout diagram showing the bidirectional switching device 31 showing the relationship of several elements constituting a part of the transistor in the bidirectional switching device 31. FIGS. 25A to 25D are cross-sectional views along lines A-A', B-B', C-C', and D-D' of FIG. 24, respectively. The bidirectional switching device 31 has a layered structure similar to that of the bidirectional switching device 11. For ease of understanding, the same structural elements in FIGS. 4, 5A to 5D and FIGS. 24, 25A to 25B are labeled with the same reference numerals and symbols, and further detailed description is omitted.

[0152] Referring to FIGS. 24 and 25A to 25D, the bidirectional switching device 31 includes a substrate 102, a first nitride-based semiconductor layer 104, a second nitride-based semiconductor layer 106, a gate structure 110, S / D electrodes 116, a first passivation layer 124, a passivation layer 126, a third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more second conductive traces 146, a protective layer 154, and one or more gallium through vias (TGVs) 162.

[0153] The nitride-based semiconductor layer 104 is disposed on the substrate 102. The nitride-based semiconductor layer 106 is disposed on the nitride-based semiconductor layer 104.

[0154] The gate structure 110 is disposed on / above / over the second nitride-based semiconductor layer. Each gate structure 110 includes a selectable gate semiconductor layer 112 and a gate metal layer 114. The gate semiconductor layer 112 and the gate metal layer 114 are stacked on the nitride-based semiconductor layer 106. The gate semiconductor layer 112 is interposed between the nitride-based semiconductor layer 106 and the gate metal layer 114.

[0155] The nitride-based bidirectional transistor Qm and the first substrate coupling transistor Q1 may be enhancement-type devices, and the enhancement-type devices are in a normally-off state when their gate electrodes 114 are at about zero bias.

[0156] The S / D electrodes 116 are disposed on the nitride-based semiconductor layer 106. The S / D electrodes 116 are located at both sides opposite to the corresponding gate structure 110, but other arrangements may be used, especially when a plurality of source electrodes, drain electrodes, or gate electrodes are employed in the device. Each gate structure 110 is arranged so that each gate structure 110 is located between at least two of the S / D electrodes 116. Both the gate structure 110 and the S / D electrodes 116 are at least one nitride-based / GaN-based HEMT having a 2DEG region. In some embodiments, the S / D electrodes 116 may form an ohmic contact with the nitride-based semiconductor layer 106.

[0157] The passivation layer 124 is disposed on the nitride-based semiconductor layer 106. The passivation layer 124 covers the upper surface of the nitride-based semiconductor layer 106. The passivation layer 124 may cover the gate structure 110. The passivation layer 124 may cover at least two sidewalls opposite to the gate structure 110. The S / D electrodes 116 can penetrate / pass through the passivation layer 124 and contact the nitride-based semiconductor layer 106.

[0158] The passivation layer 126 is disposed above the passivation layer 124 and the S / D electrodes 116. The passivation layer 126 covers the passivation layer 124 and the S / D electrodes 116.

[0159] The conductive via 132 is disposed within the passivation layer 126 and the passivation layer 124. The conductive via 132 penetrates the passivation layer 126 and the passivation layer 124. The conductive via 132 extends in the vertical direction and is electrically coupled to the gate structure 110 and the S / D electrodes 116 respectively. The upper surface of the conductive via 132 is not covered by the passivation layer 126.

[0160] The conductive trace 142 is disposed on the passivation layer 126 and the conductive via 132. The conductive trace 142 is in contact with the conductive via 132. The conductive trace 142 is formed by patterning a conductive layer disposed on the passivation layer 126 and the conductive via 132.

[0161] The passivation layer 128 is disposed above the passivation layer 126 and the conductive trace 142. The passivation layer 128 covers the passivation layer 126 and the conductive trace 142. The passivation layer 128 may be a planarization layer, and the planarization layer has a horizontal upper surface for supporting other layers / elements.

[0162] The conductive via 136 is disposed within the passivation layer 128. The conductive via 136 penetrates the passivation layer 128. The conductive via 136 extends longitudinally and is electrically coupled to the conductive trace 142. The upper surface of the conductive via 136 is not covered by the passivation layer 136.

[0163] The conductive trace 146 is disposed on the passivation layer 128 and the conductive via 136. The conductive trace 146 is in contact with the conductive via 136. The conductive trace 146 is formed by patterning a conductive layer disposed on the passivation layer 128 and the conductive via 136.

[0164] The TGV 162 is formed to extend longitudinally from the second conductive layer 146 and penetrate into the substrate 102. The upper surface of the TGV 162 is not covered by the third passivation layer 128. In some embodiments, the TGV 162 may be formed to extend longitudinally from the first conductive layer 142 and penetrate into the substrate 102. The upper surface of the TGV 162 is not covered by the second passivation layer 126.

[0165] The protective layer 154 is disposed above the passive layer 128 and the conductive layer 146. The protective layer 154 covers the passive layer 128 and the conductive layer 146. The protective layer 154 prevents oxidation of the conductive layer 146. Some portions of the conductive layer 146 are exposed by openings in the protective layer 154 to form conductive pads 170, and the conductive pads 170 are arranged to be electrically connected to external elements (e.g., an external circuit).

[0166] The conductive pads 170 include a control pad CTRL arranged as a control node, a first power / load pad P / L1 arranged as a first power / load node, a second power / load pad P / L2 arranged as a second power / load node, and a reference pad REF arranged as a reference node.

[0167] The conductive traces 142 or 146, the conductive vias 132 or 136, and the TGVs 162 can be arranged to be electrically connected to different layers / elements to form a nitride-based bidirectional transistor Qm and a first substrate coupling transistor Q1.

[0168] Referring to FIG. 25A, the S / D electrode 116 includes at least one first S / D electrode 116a, and the first S / D electrode 116a is electrically connected to the first power / load pad and is arranged as the first source / drain terminal of the nitride-based bidirectional transistor Qm and the drain terminal of the first substrate coupling transistor Q1.

[0169] The first S / D electrode 116a is connected to the first power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0170] In this exemplary structure, the same S / D electrodes are shared by the nitride-based bidirectional transistor Qm and the first substrate coupling transistor Q1, enabling the chip size to be minimized. In some embodiments, different S / D electrodes can be used as the first source / drain terminal of the nitride-based bidirectional transistor Qm and the drain terminal of the first substrate coupling transistor Q1.

[0171] Referring to FIG. 25B. The gate structure 110 includes at least one first gate structure 110a, and the first gate structure 110a is electrically connected to the control pad and is arranged as the main gate terminal of the nitride-based bidirectional transistor Qm. The first gate structure 110a is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0172] The gate structure 110 further includes at least one second gate structure 110b, and the second gate structure 110b is electrically connected to the control pad and is arranged as the gate terminal of the first substrate coupling transistor Q1. The second gate structure 110b is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0173] Referring to FIG. 25C. The S / D electrode 116 includes at least one second S / D electrode 116b, and the second S / D electrode 116b is electrically connected to the second power / load pad and is arranged as the second source / drain terminal of the nitride-based bidirectional transistor Qm. The second S / D electrode 116b is connected to the second power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0174] Refer to FIG. 25D. The S / D electrode 116 includes at least one third S / D electrode 116c, and the third S / D electrode 116c is electrically connected to the substrate 102 and the reference pad and is arranged as the source terminal of the first substrate coupling transistor Q1. The third S / D electrode 116c is electrically connected to the substrate through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The third S / D electrode 116c is further electrically connected to the reference pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0175] Preferably, the second S / D electrode 116b is adjacent to the first S / D electrode 116a, and the first gate structure 110a is interposed between the first S / D electrode 116a and the second S / D electrode 116b.

[0176] Preferably, the third S / D electrode 116c is adjacent to the first S / D electrode 116a, and the second gate structure 110b is interposed between the first S / D electrode 116a and the third S / D electrode 116c.

[0177] Since the manufacturing method of the bidirectional switching device 31 is similar to that of the bidirectional switching device 11, it includes the steps shown in FIGS. 6A to 6K.

[0178] Returning to FIGS. 25A to 25D for reference, the nitride-based bidirectional transistor Qm is configured by the following steps. At least one first S / D electrode is electrically connected to the first power / load pad to form the first S / D terminal of the nitride-based bidirectional transistor Qm. At least one second S / D electrode is electrically connected to the second power / load pad to form the second S / D terminal of the nitride-based bidirectional transistor Qm. And at least one first gate structure is electrically connected to the control pad to form the main gate terminal of the nitride-based bidirectional transistor Qm.

[0179] The first substrate coupling transistor Q1 is configured by the following steps. The first S / D electrode is used as the drain terminal of the first substrate coupling transistor Q1. At least one third S / D electrode is electrically connected to the substrate to form the source terminal of the first substrate coupling transistor Q1. And at least one second gate structure is electrically connected to the control pad to form the gate terminal of the first substrate coupling transistor Q1.

[0180] FIG. 26 is a circuit block diagram showing a bidirectional switching device 4 having substrate potential management ability according to some embodiments of the present invention. The bidirectional switching device 4 is similar to the bidirectional switching device 3. For ease of understanding, the same elements in FIGS. 21 and 26 are labeled with the same reference numerals and further detailed descriptions are omitted.

[0181] As shown in FIG. 26, different from the bidirectional switching device 3 in FIG. 21, the substrate potential management circuit of the bidirectional switching device 4 further includes a second potential stabilizing element F2, and the second potential stabilizing element F2 has a first conduction terminal connected to the main substrate and a second conduction terminal connected to the reference node.

[0182] When a high-level voltage is applied to the control node, the first potential stabilizing element F1 has a first resistance lower than the second resistance of the second potential stabilizing element F2, and the potential of the main substrate basically becomes equal to the lower one of the potentials of the first power / load node and the second power / load node.

[0183] When a low-level voltage is applied to the control node, the first resistance becomes higher than the second resistance, and the potential of the main substrate basically becomes equal to the ground potential.

[0184] FIG. 27 is a circuit diagram showing a bidirectional switching device 41 according to several embodiments based on the circuit block diagram of FIG. 26. The bidirectional switching device 41 is similar to the bidirectional switching device 31 of FIG. 22. For ease of understanding, the same elements in FIGS. 22 and 27 are denoted by the same reference numerals and symbols, and further detailed description is omitted.

[0185] As shown in FIG. 27. Different from the bidirectional switching device 31 of FIG. 22, the third potential stabilizing element F3 of the bidirectional switching device 41 is a resistor R1, and the resistor R1 has a first terminal connected to the main substrate and a second terminal connected to ground via a reference node.

[0186] Since the operation mechanism of the bidirectional switching device 41 is the same as that of the bidirectional switching device 31, FIGS. 23A to 23D can be referred to. For ease of understanding and simplicity, further detailed description of the operation mechanism of the bidirectional switching device 41 is omitted.

[0187] An integrated circuit (IC) chip is formed by integrating a nitride-based bidirectional transistor Qm with a first potential stabilizing element F1 and a second potential stabilizing element F2. Therefore, the bidirectional switching device 41 of FIG. 27 is formed by integrating a nitride-based bidirectional transistor Qm, a first substrate coupling transistor Q1, and a resistor R1 in an IC chip.

[0188] FIG. 28 and FIGS. 29A to 29B are structural diagrams showing a bidirectional switching device 41a according to an embodiment based on the circuit diagram of FIG. 27. FIG. 28 is a partial layout diagram showing the bidirectional switching device 41a showing the relationship among some elements constituting the transistor portion and resistors in the bidirectional switching device 41a. Since the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 28 are the same as the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 24, respectively, FIGS. 25A to 25C can be referred to. The cross-sectional views along lines D-D' and E-E' in FIG. 28 are shown in FIGS. 29A and 29B, respectively. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 24, 25A to 25D, and FIGS. 28, 29A to 29B, and further detailed description is omitted.

[0189] Refer to FIGS. 28 and 29A to 29B. The bidirectional switching device 41a is similar to the bidirectional switching device 31, and the difference is that the bidirectional switching device 41a further includes a resistance element 180a. The resistance element 180a includes a first end 181a that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182a that is electrically connected to the reference pad and serves as the second terminal of the resistor R1.

[0190] The resistance element 180a is disposed at the same layer location of the 2DEG region adjacent to the hetero-junction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106. The first end 181a is electrically coupled to the substrate 102 via at least one ohmic contact element 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162. The second end 182a is electrically connected to the reference pad via at least one ohmic contact element 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0191] The manufacturing method of the bidirectional switching device 41a includes the steps shown in FIGS. 6A to 6K. Regarding the difference, between the steps shown in FIGS. 6A and 6B, the 2DEG region adjacent to the hetero-junction interface between the first nitride semiconductor layer 104 and the second nitride semiconductor layer 106 is patterned by ion implantation to form the resistor element 180a.

[0192] FIGS. 30 and 31A to 31B are structural diagrams showing a bidirectional switching device 41b according to another embodiment based on the circuit diagram of FIG. 27. FIG. 30 is a partial layout diagram showing the bidirectional switching device 41b showing the relationship among some elements constituting the transistor and the resistor in the bidirectional switching device 41b. Since the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 30 are the same as the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 24 respectively, FIGS. 25A to 25C can be referred to. The cross-sectional views along lines D-D' and E-E' in FIG. 30 are shown in FIGS. 31A and 31B respectively. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 24, 25A to 25D and FIGS. 30, 31A to 31B, and further detailed description is omitted.

[0193] Referring to FIGS. 30 and 31A to 31B. The bidirectional switching device 41b is similar to the bidirectional switching device 31. Regarding the difference, the bidirectional switching device 41b further includes a resistor element 180b. The resistor element includes a first end 181b that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182b that is electrically connected to the reference pad and serves as the second terminal of the resistor R1.

[0194] The resistive element 180b is disposed on the second nitride-based semiconductor layer 106 and manufactured from the same material as the gate structure 310. The first end 181b is electrically coupled to the substrate 102 via at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162. The second end 182b is electrically connected to a reference pad via at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0195] The manufacturing method of the bidirectional switching device 41b includes the steps shown in FIGS. 6A to 6K. Regarding the differences, in the step shown in FIG. 6C, the gate structure 310 and the resistive element 180b are simultaneously formed by patterning the blanket semiconductor layer 111 and the blanket gate electrode layer 113.

[0196] FIGS. 32 and 33A to 33B are structural diagrams showing the bidirectional switching device 41c according to an embodiment based on the circuit diagram of FIG. 27. FIG. 32 is a partial layout diagram showing the bidirectional switching device 41c showing the relationship among the transistor part and some elements constituting the resistor in the bidirectional switching device 41c. Since the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 32 are the same as the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 24, respectively, FIGS. 25A to 25C can be referred to. The cross-sectional views along lines D-D' and E-E' in FIG. 32 are shown in FIGS. 33A and 33B, respectively. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 24, 25A to 25D and FIGS. 32, 33A to 33B, and further detailed description is omitted.

[0197] Refer to FIGS. 32 and 33A to 33B. The bidirectional switching device 41c is similar to the bidirectional switching device 31, and the difference is that the bidirectional switching device 41c further includes a resistor element 180c. The resistor element includes a first end 181c that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182c that is electrically connected to the reference pad and serves as the second terminal of the resistor R1.

[0198] The resistor element 180c is disposed on the first Static layer 124 and is made of the same material as the S / D electrode 116. The first end 181c is electrically coupled to the substrate 102 via at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162. The second end 182c is electrically connected to the reference pad via at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0199] The manufacturing method of the bidirectional switching device 41c includes the steps shown in FIGS. 6A to 6K. The difference is that in the step shown in FIG. 6E, the blanket conductive layer 115 is patterned to simultaneously form the S / D electrode 116 and the resistor element 180c.

[0200] FIG. 34 and FIGS. 35A to 35B are structural diagrams showing a bidirectional switching device 41d according to an embodiment based on the circuit diagram of FIG. 27. FIG. 34 is a partial layout diagram showing the bidirectional switching device 41d showing the relationship among the transistor part and some elements constituting the resistor in the bidirectional switching device 41d. Since the cross-sectional views along lines A-A', B-B', and C-C' of FIG. 34 are the same as the cross-sectional views along lines A-A', B-B', and C-C' of FIG. 24, FIGS. 25A to 25C can be referred to. The cross-sectional views along lines D-D' and E-E' of FIG. 34 are shown in FIGS. 35A and 35B, respectively. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 24, 25A to 25D, and FIGS. 34, 35A to 35B, and further detailed description is omitted.

[0201] Refer to FIGS. 34 and 35A to 35B. The bidirectional switching device 41d is similar to the bidirectional switching device 31, and the difference is that the bidirectional switching device 41d further includes a resistance element 180d. The resistance element includes a first end 181d that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182d that is electrically connected to the reference pad and serves as the second terminal of the resistor R1.

[0202] The resistance element 180d is Static layer disposed within 126. Static layer 126 is divided into a lower layer 126a below the resistance element 180d and an upper layer 126b above the resistance element 180d. In other words, the resistance element 180d is sandwiched between the first layer 126a, the lower layer 126a, and the upper layer 126b. The first end 181d is electrically coupled to the substrate 102 via at least one third conductive via 134, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162. The second end 182e is electrically connected to the reference pad via at least one third conductive via 134, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0203] The manufacturing method of the bidirectional switching device 41d includes the steps shown in FIGS. 6A to 6K. Regarding the differences, the passive layer 126a is laminated on the passive layer 124, the blanket metal / metal compound layer 143 is laminated on the passive layer 126a and patterned to form the resistance element 180d, the passive layer 126b is laminated on the passive layer 126a to cover the resistance element 180d, and one or more third conductive vias 134 are formed in the passive layer 126b and electrically coupled to the resistance element 180d.

[0204] FIGS. 36 and 37A to 37B are structural diagrams showing the bidirectional switching device 41e according to an embodiment based on the circuit diagram of FIG. 27. FIG. 36 is a partial layout diagram showing the bidirectional switching device 41e showing the relationship among the transistor portion and some elements constituting the resistor in the bidirectional switching device 41e. Since the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 36 are the same as the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 24 respectively, FIGS. 25A to 25C can be referred to. The cross-sectional views along lines D-D' and E-E' in FIG. 36 are shown in FIGS. 37A and 37B respectively. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 24, 25A to 25D, and FIGS. 36, 37A to 37B, and further detailed description is omitted.

[0205] Refer to FIGS. 36 and 37A to 37B. The bidirectional switching device 41e is similar to the bidirectional switching device 31. Regarding the differences, the bidirectional switching device 41e further includes a resistance element 180e. The resistance element includes a first end 181e electrically connected to the substrate 102 and serving as the first terminal of the resistor R1, and a second end 182e electrically connected to the reference pad and serving as the second terminal of the resistor R1.

[0206] The resistance element 180e is disposed on the second Static layer 126 and is manufactured of the same material as the conductive trace 142. The first end 181e isLess It is electrically coupled to the substrate 102 via at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162. The second end 182e is electrically connected to a reference pad via at least one second conductive via 136 and at least one second conductive trace 146.

[0207] The method of manufacturing the bidirectional switching device 41e includes the steps shown in FIGS. 6A to 6K. Regarding the differences, in the step shown in FIG. 6G, the conductive trace 142 and the resistance element 180e are simultaneously formed by patterning the blanket conductive layer 141.

[0208] FIGS. 38 and 39A to 39B are structural diagrams showing a bidirectional switching device 41f according to an embodiment based on the circuit diagram of FIG. 27. FIG. 38 is a partial layout diagram showing the bidirectional switching device 41f showing the relationship among some elements constituting the transistor and the resistor in the bidirectional switching device 41f. Since the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 38 are the same as the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 24 respectively, FIGS. 25A to 25C can be referred to. The cross-sectional views along lines D-D' and E-E' in FIG. 38 are shown in FIGS. 39A and 39B respectively. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 24, 25A to 25D and FIGS. 38, 39A to 39B, and further detailed description is omitted.

[0209] Referring to FIGS. 38 and 39A to 39B. The bidirectional switching device 41f is similar to the bidirectional switching device 31. Regarding the differences, the bidirectional switching device 41f further includes a resistance element 180f. The resistance element includes a first end 181f that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182f that is electrically connected to a reference pad and serves as the second terminal of the resistor R1.

[0210] The resistance element 180f is the third Static layerIt is disposed on 128 and manufactured from the same material as the conductive trace 146. The first end 181f is electrically coupled to the substrate 102 via at least one TGV 162. The second end 182f is electrically connected to a reference pad.

[0211] The manufacturing method of the bidirectional switching device 41f includes the steps shown in FIGS. 6A to 6K. Regarding the differences, in the step shown in FIG. 6J, the conductive trace 146 and the resistive element 180f are simultaneously formed by patterning the blanket conductive layer 145.

[0212] FIG. 40 is a circuit block diagram showing a bidirectional switching device 5 having substrate potential management capabilities according to some embodiments of the present invention.

[0213] As shown in FIG. 40, the bidirectional switching device 5 has a control node CTRL, a first power / load node P / L1, a second power / load node P / 2, and a main substrate.

[0214] The bidirectional switching device 5 operates in a first operating mode (the first power / load node biases at a voltage V L higher than the voltage V H ), and operates in a second operating mode (the second power / load node biases at a voltage V L higher than the voltage V H ).

[0215] The bidirectional switching device 5 includes a nitride-based bidirectional transistor Qm and a substrate potential management circuit arranged to manage the potential of the main substrate of the bidirectional switching device 5.

[0216] The bidirectional transistor Qm has a main gate terminal Gm electrically connected to a control node, a first source / drain terminal S / D1 electrically connected to a first power / load node, a second source / drain terminal S / D2 electrically connected to a second power / load node, and a main substrate terminal SUB electrically connected to a main substrate.

[0217] The substrate potential management circuit includes a first potential stabilizing element F1. The first potential stabilizing element F1 has a control terminal electrically connected to the control node, a first conduction terminal electrically connected to the first power / load node, a second conduction terminal electrically connected to the main substrate, and a substrate terminal electrically connected to the main substrate.

[0218] The substrate potential management circuit further includes a second potential stabilizing element F2. The second potential stabilizing element F2 has a control terminal electrically connected to the control node, a first conduction terminal electrically connected to the second power / load node, a second conduction terminal electrically connected to the main substrate, and a substrate terminal electrically connected to the main substrate.

[0219] The substrate potential management circuit further includes a third potential stabilizing element F3. The third potential stabilizing element F3 has a first conduction terminal connected to the main substrate and a second conduction terminal connected to the control node.

[0220] When a high-level voltage is applied to the control node, the first potential stabilizing element F1 has a first resistance lower than the third resistance of the third potential stabilizing element F3, and the second potential stabilizing element F2 has a second resistance lower than the third resistance. The potential of the main substrate basically becomes equal to the lower one of the potentials of the first power / load node and the second power / load node.

[0221] When a low-level voltage is applied to the control node, the first resistance becomes higher than the third resistance, and the second resistance becomes higher than the third resistance. The potential of the main substrate basically becomes equal to the low-level voltage.

[0222] FIG. 41 is a circuit diagram showing a bidirectional switching device 51 according to some embodiments based on the circuit block diagram of FIG. 40.

[0223] Referring to FIG. 41. The first potential stabilizing element F1 includes a first substrate coupling transistor Q1. The first substrate coupling transistor Q1 has a first gate terminal G1 electrically connected to a control node, a first drain terminal D1 electrically connected to a first power / load node, and a first source terminal S1 electrically connected to a main substrate.

[0224] The second potential stabilizing element F2 includes a second substrate coupling transistor Q2. The second substrate coupling transistor Q2 has a second gate terminal G2 electrically connected to a control node, a second drain terminal D2 electrically connected to a second power / load node, and a second source terminal S2 electrically connected to a main substrate.

[0225] The first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 are composed of transistors of each type, including, but not limited to, GaN HEMT, Si MOSFET, insulated gate bipolar transistor (IGBT), junction gate field effect transistor (JFET), and static induction transistor (SIT).

[0226] The third potential stabilizing element F3 may be a non-rectifying element, for example, a resistor R1, and has a first terminal connected to the main substrate and a second terminal connected to the control node.

[0227] FIGS. 42A and 42B are operation mechanism diagrams showing the bidirectional switching device 51 in a first operation mode (biased with a higher voltage V L than voltage V H applied to the second power / load node).

[0228] Referring to FIG. 42A. High-level voltage V ONWhen applied to the control node to turn on the bidirectional transistor Qm, the first substrate coupling transistor Q1, and the second substrate coupling transistor Q2, current reaches from the control node to the second power / load node and flows through the resistor R1. Subsequently, the potential Vsub of the substrate is calculated by the following formula: Vsub = V L + (V ON -V L )*Rs2,on / (Rs2,on+R). Here, R is the resistance of the resistor R1, and Rs2,on is the on-resistance of Q2. Since Vm,on is extremely small and Rs2,on is much smaller than R, the potential Vsub of the substrate is basically equal to the voltage V L applied to the second power / load node.

[0229] Refer to FIG. 42B. When the low-level voltage V OFF is applied to the control node to turn off the bidirectional transistor Qm, the first substrate coupling transistor Q1, and the second substrate coupling transistor Q2, current reaches from the first power / load node to the control node and flows through the resistor R1. The potential Vsub of the substrate is calculated by the following formula: Vsub = V OFF +(V H - V OFF )*R / (R+Rs1,off). Rs1,off is the off-resistance of the first substrate coupling transistor Q1. Since Rs1,off is much larger than R, the potential Vsub of the substrate is basically equal to the low-level voltage V OFF applied to the control node.

[0230] FIGS. 42C and 42D are operation mechanism diagrams showing the bidirectional switching device 51 in the second operation mode (the second power / load node is biased under a voltage V L higher than the voltage V H applied to the first power / load node).

[0231] Refer to FIG. 42C. The high-level voltage V ONWhen applied to the control node to turn on the bidirectional transistor Qm, the first substrate coupling transistor Q1, and the second substrate coupling transistor Q2, current reaches the first power / load node from the control node and flows through the resistor R1. Subsequently, the potential Vsub of the substrate is calculated by the following equation: Vsub = V L +(V ON -V L )*Rs1,on / (Rs1,on + R). Here, Rs1,on is the on-resistance of Q1. Since Vm,on is extremely small and Rs1,on is much smaller than R, the potential Vsub of the substrate is basically equal to the voltage V L applied to the second power / load node.

[0232] Referring to FIG. 42D. When the low-level voltage V OFF is applied to the control node to turn off the bidirectional transistor Qm, the first substrate coupling transistor Q1, and the second substrate coupling transistor Q2, current reaches the control node from the second power / load node and flows through the resistor R1. The potential Vsub of the substrate is calculated by the following equation: Vsub = V OFF +(V H - V OFF )*R / (R + Rs2,off). Here, Rs2,off is the off-resistance of the second substrate coupling transistor Q2. Since Rs2,off is much larger than R, the potential Vsub of the substrate is basically equal to the low-level voltage V OFF applied to the control node.

[0233] The bidirectional switching device 51 in FIG. 41A is formed by integrating a nitride-based bidirectional transistor Qm, a first substrate coupling transistor Q1, a second substrate coupling transistor Q2, and a resistor R1 in an IC chip.

[0234] FIG. 43 and FIGS. 44A to 44E are structural diagrams showing a bidirectional switching device 51a based on the circuit diagram of FIG. 41A. FIG. 43 is a partial layout diagram showing the bidirectional switching device 51a showing the relationship among the transistor part and some elements constituting resistors in the bidirectional switching device 51a. FIGS. 44A to 44E are cross-sectional views taken along lines A-A', B-B', C-C', D-D', and E-E' of FIG. 43, respectively. The bidirectional switching device 51a has a layered structure similar to the layered structure of the bidirectional switching device 21a. For ease of understanding, the same elements are labeled with the same reference symbols and signs, and further detailed description is omitted.

[0235] Referring to FIGS. 43 and 44A to 44E, the bidirectional switching device 51a includes a substrate 102, a first nitride-based semiconductor layer 104, a second nitride-based semiconductor layer 106, a gate structure 110, S / D electrodes 116, a first passivation layer 124, a passivation layer 126, a third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more second conductive traces 146, a protection layer 154, one or more gallium through vias (TGVs) 162, and one or more conductive pads 170. The conductive pad 170 is arranged to be electrically connected to an external element (e.g., an external circuit).

[0236] The conductive trace 142 or 146, the conductive via 132 or 136, and the TGV 162 are electrically connected to different layers / elements and arranged to form a nitride-based bidirectional transistor Qm, a first substrate coupling transistor Q1, a second substrate coupling transistor Q2, and a resistor R1.

[0237] The conductive pad 170 includes a control pad CTRL arranged as a control node, a first power / load pad P / L1 arranged as a first power / load node, and a second power / load pad P / L2 arranged as a second power / load node.

[0238] Refer to FIG. 44A. The S / D electrode 116 includes at least one first S / D electrode 116a. The first S / D electrode 116a is electrically connected to the first power / load pad and is arranged as the first source / drain terminal of the nitride-based bidirectional transistor Qm and the drain terminal of the first substrate coupling transistor Q1. The first S / D electrode 116a is connected to the first power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0239] In this exemplary structure, the same S / D electrode is shared by the nitride-based bidirectional transistor Qm and the first substrate coupling transistor Q1, enabling the chip size to be minimized. In some embodiments, different S / D electrodes can be used as the first source / drain terminal of the nitride-based bidirectional transistor Qm and the drain terminal of the first substrate coupling transistor Q1.

[0240] Refer to FIG. 44B. The S / D electrode 116 includes at least one second S / D electrode 116b. The second S / D electrode 116b is electrically connected to the second power / load pad and is arranged as the second source / drain terminal of the nitride-based bidirectional transistor Qm and the drain terminal of the second substrate coupling transistor Q2. The second S / D electrode 116b is connected to the second power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0241] In this exemplary structure, the same S / D electrode is shared by the nitride-based bidirectional transistor Qm and the second substrate coupling transistor Q2, enabling the chip size to be minimized. In some embodiments, different S / D electrodes can be used as the second source / drain terminal of the nitride-based bidirectional transistor Qm and the drain terminal of the second substrate coupling transistor Q2.

[0242] Refer to FIG. 44C. The gate structure 110 includes at least one first gate structure 110a, and the first gate structure 110a is electrically connected to the control pad and is arranged as the main gate terminal of the nitride-based bidirectional transistor Qm. The first gate structure 110a is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0243] The gate structure 110 further includes at least one second gate structure 110b, and the second gate structure 110b is electrically connected to the control pad and is arranged as the gate terminal of the first substrate coupling transistor Q1. The second gate structure 110b is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0244] The gate structure 110 further includes at least one third gate structure 110c, and the third gate structure 110c is electrically connected to the control pad and is arranged as the gate terminal of the second substrate coupling transistor Q2. The third gate structure 110c is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0245] Refer to FIG. 44D. The S / D electrode 116 includes at least one third S / D electrode 116c, and the third S / D electrode 116c is electrically connected to the substrate 102 and is arranged as the source terminal of the first substrate coupling transistor Q1. The third S / D electrode 116c is electrically connected to the substrate via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

[0246] The S / D electrode 116 further includes at least one fourth S / D electrode 116d, and the fourth S / D electrode 116d is electrically connected to the substrate and is arranged as the source terminal of the second substrate coupling transistor Q2. The fourth S / D electrode 116d is electrically connected to the substrate through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

[0247] Preferably, the second S / D electrode 116b is adjacent to the first S / D electrode 116a, and the first gate structure 110a is interposed between the first S / D electrode 116a and the second S / D electrode 116b.

[0248] Preferably, the third S / D electrode 116c is adjacent to the first S / D electrode 116a, and the second gate structure 110b is interposed between the first S / D electrode 116a and the third S / D electrode 116c.

[0249] Preferably, the fourth S / D electrode 116d is adjacent to the second S / D electrode 116b, and the third gate structure 110c is interposed between the fourth S / D electrode 116d and the second S / D electrode 116b. Refer to FIGS. 43 and 44E. The bi-directional switching device 51a further includes a resistor element 180a. The resistor element 180a includes a first end 181a that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182a that is electrically connected to the control pad and serves as the second terminal of the resistor R1.

[0250] The resistive element 180a is disposed at the same layer location of the 2DEG region adjacent to the hetero-junction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106. The first end 181a is electrically coupled to the substrate 102 via at least one ohmic contact element 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182a is electrically connected to the control pad via at least one ohmic contact element 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0251] Since the manufacturing method of the bidirectional switching device 51a is similar to the manufacturing method of the bidirectional switching device 21a, it includes the steps shown in FIGS. 6A to 6K. Regarding the differences, during the steps shown in FIGS. 6A and 6B, the 2DEG region adjacent to the hetero-junction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106 is patterned by ion implantation to form the resistive element 180a.

[0252] FIGS. 45 and 46 are structural diagrams showing a bidirectional switching device 51b according to another embodiment based on the circuit diagram of FIG. 41A. FIG. 45 is a partial layout diagram showing the bidirectional switching device 51b showing the relationship among some elements constituting the transistor and the resistor in the bidirectional switching device 51b. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 45 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 43, FIGS. 44A to 44D can be referred to. The cross-sectional view along line E-E' in FIG. 45 is shown in FIG. 46. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 43, 44A to 44E, and FIGS. 45 and 46, and further detailed description is omitted.

[0253] Refer to FIGS. 45 and 46. The bidirectional switching device 51b includes a resistive element 180b. The resistive element 180b includes a first end 181b that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182b that is electrically connected to the control pad and serves as the second terminal of the resistor R1.

[0254] The bidirectional switching device 51b is similar to the bidirectional switching device 51a. The difference is that the resistive element 180b is disposed on the second nitride-based semiconductor layer 106 and is made of the same material as the gate structure 110. The first end 181b is electrically coupled to the substrate 102 via at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182b is electrically connected to the control pad via at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0255] The manufacturing method of the bidirectional switching device 51b is similar to that of the bidirectional switching device 21b, and thus includes the steps shown in FIGS. 6A to 6K. The difference is that in the step shown in FIG. 6C, the gate structure 110 and the resistive element 180b are simultaneously formed by patterning the blanket semiconductor layer 111 and the blanket gate electrode layer 113.

[0256] Figures 47 and 48 are structural diagrams showing a bidirectional switching device 51c according to another embodiment based on the circuit diagram of FIG. 41A. FIG. 47 is a partial layout diagram showing the bidirectional switching device 51c showing the relationship among some elements constituting the transistor portion and resistors in the bidirectional switching device 51c. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 47 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 43, FIGS. 44A to 44D can be referred to. The cross-sectional view along line E-E' in FIG. 47 is shown in FIG. 48. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 43, 44A to 44E, and FIGS. 47 and 48, and further detailed description is omitted.

[0257] Referring to FIGS. 47 and 48. The bidirectional switching device 51c includes a resistive element 180c. The resistive element 180c includes a first end 181c electrically connected to the substrate 102 and serving as a first terminal of the resistor R1, and a second end 182c electrically connected to the control pad and serving as a second terminal of the resistor R1.

[0258] The bidirectional switching device 51c is similar to the bidirectional switching device 51a, and in terms of the difference, the resistive element 180c is disposed on the first Static layer 124 and is made of the same material as the S / D electrode 116. The first end 181c is electrically coupled to the substrate 102 via at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182c is electrically connected to the control pad via at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0259] The manufacturing method of the bidirectional switching device 51c is similar to that of the bidirectional switching device 21c, and includes the steps shown in FIGS. 6A to 6K. Regarding the difference, in the step shown in FIG. 6E, the blanket conductive layer 115 is patterned to simultaneously form the S / D electrodes 116 and the resistor element 180c.

[0260] FIGS. 49 and 50 are structural diagrams showing a bidirectional switching device 51d according to another embodiment based on the circuit diagram of FIG. 41A. FIG. 49 is a partial layout diagram showing the bidirectional switching device 51d showing the relationship among some elements constituting the transistor portion and the resistor in the bidirectional switching device 51d. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 49 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 43, FIGS. 44A to 44D can be referred to. The cross-sectional view along line E-E' in FIG. 49 is shown in FIG. 50. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 43, 44A to 44E, and FIGS. 49 and 50, and further detailed description is omitted.

[0261] Referring to FIGS. 49 and 50. The bidirectional switching device 51d includes a resistor element 180d. The resistor element 180d includes a first end 181d electrically connected to the substrate 102 and serving as the first terminal of the resistor R1, and a second end 182d electrically connected to the control pad and serving as the second terminal of the resistor R1.

[0262] The bidirectional switching device 51d is similar to the bidirectional switching device 51a. Regarding the difference, the resistor element 180d is Static layer arranged within 126. Static layer126 is divided into a lower layer 126a below the resistive element 180d and an upper layer 126b above the resistive element 180d. In other words, the resistive element 180d is sandwiched between the first layer 126a and the lower layer 126a and the upper layer 126b. The first end 181d is electrically coupled to the substrate 102 via at least one third conductive via 134, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182e is electrically connected to the control pad via at least one third conductive via 134, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0263] The manufacturing method of the bidirectional switching device 51d is similar to the manufacturing method of the bidirectional switching device 21d, and thus includes the steps shown in FIGS. 6A to 6K. Regarding the differences, the lower passive layer 126a is laminated on the passive layer 124, the blanket metal / metal compound layer 143 is laminated on the passive layer 126a and patterned to form the resistive element 180d, the upper passive layer 126b is laminated on the lower passive layer 126a to cover the resistive element 180d, and one or more third conductive vias 134 are formed in the upper passive layer 126b and electrically coupled to the resistive element 180d.

[0264] FIGS. 51 and 52 are structural diagrams showing a bidirectional switching device 51e according to another embodiment based on the circuit diagram of FIG. 41A. FIG. 51 is a partial layout diagram showing the bidirectional switching device 51e showing the relationship among some elements constituting the transistor and the resistor in the bidirectional switching device 51e. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 51 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 43, FIGS. 43A to 43D can be referred to. The cross-sectional view along line E-E' in FIG. 51 is shown in FIG. 52. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 43, 43A to 43E, and FIGS. 51 and 52, and further detailed description is omitted.

[0265] Refer to FIGS. 51 and 52. The bidirectional switching device 51e includes a resistive element 180e. The resistive element 180e has a first end 181e that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182e that is electrically connected to the control pad and serves as the second terminal of the resistor R1.

[0266] The bidirectional switching device 51e is similar to the bidirectional switching device 51a. Regarding the differences, the resistive element 180e is Static layer arranged on 126 and manufactured from the same material as the conductive trace 142. The first end 181e is Less electrically coupled to the substrate 102 via at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162. The second end 182e is electrically connected to the control pad via at least one second conductive via 136 and at least one second conductive trace 146.

[0267] The manufacturing method of the bidirectional switching device 51e is similar to that of the bidirectional switching device 21e, and thus includes the steps shown in FIGS. 6A to 6K. Regarding the differences, in the step shown in FIG. 6G, the blanket conductive layer 141 is patterned to simultaneously form the conductive trace 142 and the resistive element 180e.

[0268] FIG. 53 and FIG. 54 are structural diagrams showing a bidirectional switching device 51f according to another embodiment based on the circuit diagram of FIG. 41A. FIG. 53 is a partial layout diagram showing the bidirectional switching device 51f showing the relationship among some elements constituting the transistor portion and resistors in the bidirectional switching device 51f. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 53 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 43, FIGS. 44A to 44D can be referred to. The cross-sectional view along line E-E' in FIG. 53 is shown in FIG. 54. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 43, 44A to 44E and FIGS. 53, 54, and further detailed description is omitted.

[0269] Refer to FIGS. 53 and 54. The bidirectional switching device 51f includes a resistive element 180e. The resistive element 180e includes a first end 181e electrically connected to the substrate 102 and serving as a first terminal of the resistor R1, and a second end 182e electrically connected to the control pad and serving as a second terminal of the resistor R1.

[0270] The bidirectional switching device 51f is similar to the bidirectional switching device 51a, and the difference is that the resistive element 180f is disposed on the third non-active layer 128 and is made of the same material as the conductive trace 146. The first end 181f is electrically coupled to the substrate 102 via at least one TGV 162. The second end 182f is electrically connected to the control pad.

[0271] The manufacturing method of the bidirectional switching device 51f is similar to the manufacturing method of the bidirectional switching device 21f, and includes the steps shown in FIGS. 6A to 6K. The difference is that in the step shown in FIG. 6J, the blanket conductive layer 145 is patterned to simultaneously form the conductive trace 146 and the resistive element 180f.

[0272] FIG. 55A is a circuit diagram showing a bidirectional switching device 52 according to some embodiments based on the circuit block diagram of FIG. 40.

[0273] Refer to FIG. 55A. The first potential stabilizing element F1 includes a first substrate coupling transistor Q1. The first substrate coupling transistor Q1 has a first gate terminal G1 electrically connected to a control node, a first drain terminal D1 electrically connected to a first power / load node, and a first source terminal S1 electrically connected to a main substrate.

[0274] The second potential stabilizing element F2 includes a second substrate coupling transistor Q2. The second substrate coupling transistor Q2 has a second gate terminal G2 electrically connected to a control node, a second drain terminal D2 electrically connected to a second power / load node, and a second source terminal S2 electrically connected to a main substrate.

[0275] The first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 are composed of transistors of each type, including, but not limited to, GaN HEMT, Si MOSFET, insulated gate bipolar transistor (IGBT), junction gate field effect transistor (JFET), and static induction transistor (SIT).

[0276] The third potential stabilizing element F3 may be a rectifying element, for example, a diode D1, which has a positive terminal connected to the main substrate and a negative terminal connected to the control node.

[0277] Refer to FIG. 55B. The diode D1 is replaced by a rectifying transistor Q3 to form a bidirectional switching device 53. The rectifying transistor Q3 has a gate terminal G3 and a source terminal S3 both connected to the main substrate, and a drain terminal D3 connected to the control node.

[0278] FIGS. 56A to 56B show a first operation mode (the voltage V applied by the first power / load node to the second power / load node L is higher than the voltage V HIt is an operation mechanism diagram showing a bi-directional switching device 52 in a situation where it is biased downward.

[0279] Refer to FIG. 56A. When a high-level voltage V ON is applied to the control node to turn on the bi-directional transistor Qm, the first substrate coupling transistor Q1, and the second substrate coupling transistor Q2, when the current reaches the diode D1 from the control node and flows through the diode D1, the diode D1 is reverse-biased, and subsequently, the potential Vsub of the substrate is calculated by the following formula: Vsub = V L + (V ON - V L ) * Rs2,on / (Rs2,on + R RV ). Here, R RV is the reverse resistance of the diode D1, and Rs2,on is the on-resistance of Q2. Since Rs2,on is much smaller than R RV , the potential Vsub of the substrate is basically equal to the voltage V L applied to the second power / load node.

[0280] Refer to FIG. 56B. When a low-level voltage V OFF is applied to the control node to turn off the bi-directional transistor Qm, the first substrate coupling transistor Q1, and the second substrate coupling transistor Q2, when the current reaches the diode D1 from the first power / load node and flows through the diode D1, the diode D1 is forward-biased, and the potential Vsub of the substrate is calculated by the following formula: Vsub = V OFF + (V H - V OFF ) * R FW / (R FW + Rs1,off). Here, Rs1,off is the off-resistance of the first substrate coupling transistor Q1. Since Rs1,off is much larger than R FW , the potential Vsub of the substrate is basically equal to the low-level voltage V OFF applied to the control node.

[0281] FIG. 56C and FIG. 56D are operation mechanism diagrams showing the bidirectional switching device 52 in the second operation mode (the second power / load node is biased at a voltage V L higher than the voltage V H ).

[0282] Referring to FIG. 56C. When a high-level voltage V ON is applied to the control node to turn on the bidirectional transistor Qm, the first substrate coupling transistor Q1, and the second substrate coupling transistor Q2, the diode D1 is reverse-biased when the current reaches the first power / load node from the control node and flows through the diode D1. Subsequently, the substrate potential Vsub is calculated by the following formula: Vsub = V L +(V ON -V L )*Rs1,on / (Rs1,on + R RV ). Here, Rs1,on is the on-resistance of Q1. Since Rs1,on is much smaller than R RV , the substrate potential Vsub is basically equal to the voltage V L applied to the first power / load node.

[0283] Referring to FIG. 56D. When a low-level voltage V OFF is applied to the control node to turn off the bidirectional transistor Qm, the first substrate coupling transistor Q1, and the second substrate coupling transistor Q2, the diode D1 is forward-biased when the current reaches the control node from the second power / load node and flows through the diode D1. The substrate potential Vsub is calculated by the following formula: Vsub = V OFF +(V H - V OFF )* R FW / (R FW +Rs2,off). Here, Rs2,off is the off-resistance of the second substrate coupling transistor Q2. Since Rs2,off is much larger than R FW , the substrate potential Vsub is basically equal to the low-level voltage V OFF applied to the control node.

[0284] The bidirectional switching device 52 / 53 is formed by integrating a nitride-based bidirectional transistor Qm, a first substrate coupling transistor Q1, a second substrate coupling transistor Q2, and a diode D1 / rectifying transistor Q3 in an IC chip.

[0285] Figures 57 and 58A to 58D are structural diagrams showing the bidirectional switching device 52 / 53. Figure 57 is a partial layout diagram showing the bidirectional switching device 52 / 53 showing the relationship of some elements constituting a part of the transistors in the bidirectional switching device 52 / 53. Figures 58A to 58D are cross-sectional views along lines A-A’, B-B’, C-C’, and D-D’ of Figure 57, respectively. For ease of understanding, the same structural elements are labeled with the same reference symbols and signs, and further detailed descriptions are omitted.

[0286] Referring to Figures 57 and 58A to 58D, the bidirectional switching device 52 / 53 includes a substrate 102, a first nitride-based semiconductor layer 104, a second nitride-based semiconductor layer 106, a gate structure 110, S / D electrodes 116, a first passivation layer 124, a passivation layer 126, a third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more second conductive traces 146, a protective layer 154, one or more gallium through vias (TGVs) 162, and a conductive pad 170.

[0287] The conductive pad 170 includes a control pad CTRL arranged as a control node, a first power / load pad P / L1 arranged as a first power / load node, and a second power / load pad P / L2 arranged as a second power / load node.

[0288] The conductive traces 142 or 146, the conductive vias 132 or 136, and the TGV 162 are electrically connected to different layers / elements and arranged to form a nitride-based bidirectional transistor Qm, a first substrate coupling transistor Q1, a second substrate coupling transistor Q2, and a diode D1 / rectifying transistor Q3.

[0289] Referring to FIG. 58A. The S / D electrode 116 includes at least one first S / D electrode 116a, and the first S / D electrode 116a is electrically connected to a first power / load pad and arranged as a first source / drain terminal of the nitride-based bidirectional transistor Qm and a drain terminal of the first substrate coupling transistor Q1. The first S / D electrode 116a is connected to the first power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0290] In this exemplary structure, the same S / D electrode is shared by the nitride-based bidirectional transistor Qm and the first substrate coupling transistor Q1, enabling the chip size to be minimized. In some embodiments, different S / D electrodes are used as the first source / drain terminal of the nitride-based bidirectional transistor Qm and the drain terminal of the first substrate coupling transistor Q1.

[0291] Referring to FIG. 58B. The S / D electrode 116 includes at least one second S / D electrode 116b, and the second S / D electrode 116b is electrically connected to a second power / load pad and arranged as a second source / drain terminal of the nitride-based bidirectional transistor Qm and a drain terminal of the second substrate coupling transistor Q2. The second S / D electrode 116b is connected to the second power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0292] In this exemplary structure, the same S / D electrodes are shared by the nitride-based bidirectional transistor Qm and the second substrate coupling transistor Q2, enabling minimization of the chip size. In some embodiments, different S / D electrodes are used as the second source / drain terminals of the nitride-based bidirectional transistor Qm and the drain terminal of the second substrate coupling transistor Q2.

[0293] Referring to FIG. 58C. The gate structure 110 includes at least one first gate structure 110a, and the first gate structure 110a is electrically connected to the control pad and disposed as the main gate terminal of the nitride-based bidirectional transistor Qm. The first gate structure 110a is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0294] The gate structure 110 further includes at least one second gate structure 110b, and the second gate structure 110b is electrically connected to the control pad and disposed as the gate terminal of the first substrate coupling transistor Q1. The second gate structure 110b is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0295] The gate structure 110 further includes at least one third gate structure 110c, and the third gate structure 110c is electrically connected to the control pad and disposed as the gate terminal of the second substrate coupling transistor Q2. The third gate structure 110c is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0296] The S / D electrode 116 includes at least one fifth S / D electrode 116e, and the fifth S / D electrode 116e is electrically connected to a control pad and is arranged as the drain terminal of the rectifying transistor Q3 (or the negative terminal of the diode D1). The fifth S / D electrode 116e is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0297] Refer to FIG. 58D. The S / D electrode 116 includes at least one third S / D electrode 116c, and the third S / D electrode 116c is electrically connected to the substrate 102 and is arranged as the source terminal of the first substrate coupling transistor Q1 and the source terminal of the rectifying transistor Q3. The third S / D electrode 116c is electrically connected to the substrate via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

[0298] The S / D electrode 116 includes at least one fourth S / D electrode 116d, and the fourth S / D electrode 116d is electrically connected to the substrate and is arranged as the source terminal of the second substrate coupling transistor Q2. The fourth S / D electrode 116d is electrically connected to the substrate via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

[0299] The gate structure 110 further includes at least one fourth gate structure 110d, and the fourth gate structure 110d is electrically connected to the substrate and is arranged as the gate terminal of the rectifying transistor Q3. The fourth gate structure 110d is connected to the substrate via at least one conductive via 132, at least one conductive trace 142, at least one conductive trace 146, and at least one TGV 162.

[0300] In other words, the positive terminal of the diode D1 is formed by the electrical short circuit between the third S / D electrode 116c and the fourth gate structure 110d.

[0301] Preferably, the second S / D electrode 116b is adjacent to the first S / D electrode 116a, and the first gate structure 110a is interposed between the first S / D electrode 116a and the second S / D electrode 116b.

[0302] Preferably, the third gate structure 110c is adjacent to the first S / D electrode 116a, and the second gate structure 110b is interposed between the first S / D electrode 116a and the third gate structure 110c.

[0303] Preferably, the fourth gate structure 110d is adjacent to the second S / D electrode 116b, and the third gate structure 110c is interposed between the fourth gate structure 110d and the second S / D electrode 116b.

[0304] Preferably, the third S / D electrode 116c is adjacent to the fifth S / D electrode 116e, and the fourth gate structure 110d is interposed between the fifth S / D electrode 116e and the third S / D electrode 116c.

[0305] In some embodiments, the rectifying transistor Q3 is composed of two sets of gate structures and S / D electrodes. For example, FIG. 59 is a partial layout diagram of the bidirectional switching device 52a / 53a having the rectifying transistor Q3. The rectifying transistor Q3 is composed of two sets of gate structures and S / D electrodes, and each set of gate structures and S / D electrodes is positioned adjacent to the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2, respectively.

[0306] Since the manufacturing method of the bidirectional switching device 52 / 53 is similar to the manufacturing method of the bidirectional switching device 11, it includes the steps shown in FIGS. 6A to 6K.

[0307] FIG. 60 is a circuit block diagram showing a bi-directional switching device 6 having substrate potential management capabilities according to some embodiments of the present invention.

[0308] As shown in FIG. 60, the bi-directional switching device 6 has a control node CTRL, a first power / load node P / L1, a second power / load node P / L2, and a main substrate.

[0309] The bi-directional switching device 6 includes a nitride-based bi-directional transistor Qm and a substrate potential management circuit arranged to manage the potential of the main substrate of the bi-directional switching device 6.

[0310] The bi-directional transistor Qm has a main gate terminal Gm electrically connected to the control node, a first source / drain terminal S / D1 electrically connected to the first power / load node, a second source / drain terminal S / D2 electrically connected to the second power / load node, and a main substrate terminal SUB electrically connected to the main substrate.

[0311] The substrate potential management circuit includes a first potential stabilizing element F1. The first potential stabilizing element F1 has a control terminal electrically connected to the control node, a first conducting terminal electrically connected to the first power / load node, a second conducting terminal electrically connected to the main substrate, and a substrate terminal electrically connected to the main substrate.

[0312] The substrate potential management circuit further includes a second potential stabilizing element F2. The second potential stabilizing element F2 has a first conducting terminal connected to the main substrate and a second conducting terminal connected to the control node.

[0313] When a high-level voltage is applied to the control node, the first potential stabilizing element F1 has a first resistance lower than the second resistance of the second potential stabilizing element F2, and the potential of the main substrate becomes basically equal to the lower one of the potentials of the first power / load node and the second power / load node.

[0314] When a low-level voltage is applied to the control node, the first resistor becomes higher than the second resistor, and the potential of the main board becomes basically equal to the low-level voltage.

[0315] FIG. 61 is a circuit diagram showing a bidirectional switching device 61 according to some embodiments based on the circuit block diagram of FIG. 50.

[0316] Referring to FIG. 61. The first potential stabilizing element F1 includes a first substrate coupling transistor Q1. The first substrate coupling transistor Q1 has a first gate terminal G1 electrically connected to the control node, a first drain terminal D1 electrically connected to the first power / load node, and a first source terminal S1 electrically connected to the main substrate.

[0317] The first substrate coupling transistor Q1 is composed of each type of transistor, including, but not limited to, GaN HEMT, Si MOSFET, insulated gate bipolar transistor (IGBT), junction gate field effect transistor (JFET), and static induction transistor (SIT).

[0318] The second potential stabilizing element F2 may be a non-rectifying element, for example, a resistor R1, and has a first terminal connected to the main substrate and a second terminal connected to the control node.

[0319] FIGS. 62A and 62B are operation mechanism diagrams showing the bidirectional switching device 61 in the first operation mode (biased under a voltage V L higher than the voltage V H applied from the first power / load node to the second power / load node).

[0320] Referring to FIG. 62A. When a high-level voltage V ON is applied to the control node to turn on the bidirectional transistor Qm and the first substrate coupling transistor Q1, current reaches from the control node to the second power / load node and flows through the resistor R1. Subsequently, the potential Vsub of the substrate is calculated by the following formula: Vsub = V L+Vm,on+(V ON -V L -Vm,on)*Rs1,on / (Rs1,on+R). Here, R is the resistance of resistor R1, Rs1,on is the on-resistance of the first substrate coupling transistor Q1, and Vm,on is the drain-source voltage when the bidirectional transistor Qm is conducting. Since Rs1,on is much smaller than R and Vm,on is extremely small, Vsub is basically equal to the voltage V L applied to the second power / load node.

[0321] Refer to FIG. 62B. When a low-level voltage V OFF is applied to the control node to turn off the bidirectional transistor Qm and the first substrate coupling transistor Q1, current reaches the control node from the first power / load node and flows through resistor R1, and the potential Vsub of the substrate is calculated by the following formula: Vsub = V OFF +(V H - V OFF )*R / (R + Rs1,off). Here, Rs1,off is the off-resistance of the first substrate coupling transistor Q1. Since Rs1,off is much larger than R, the potential Vsub of the substrate is basically equal to the low-level voltage V OFF applied to the control node.

[0322] FIGS. 62C and 62D are operation mechanism diagrams showing the bidirectional switching device 61 in a second operation mode (the second power / load node is biased under a voltage V L higher than the voltage V H applied to the first power / load node).

[0323] Refer to FIG. 62C. When a high-level voltage V ON is applied to the control node to turn on the bidirectional transistor Qm and the first substrate coupling transistor Q1, current reaches the first power / load node from the control node and flows through resistor R1, and the potential Vsub of the substrate is calculated by the following formula: Vsub = V L +(V ON -V L)*Rs1,on / (Rs1,on + R). Since Rs1,on is much smaller than R, the potential Vsub of the substrate is basically equal to the voltage V applied to the first power / load node. L becomes equal to.

[0324] Refer to Fig. 62D. When a low-level voltage V OFF is applied to the control node to turn off the bidirectional transistor Qm and the first substrate coupling transistor Q1, current reaches the control node from the second power / load node and flows through the resistor R1, and the potential Vsub of the substrate is calculated by the following formula: Vsub = V OFF +(V H - Vm,off - V OFF )*R / (Rs1,off + R). Here, Vm,off is the drain-source voltage when the bidirectional transistor Qm is turned off. Since Rs1,off is much larger than R, the potential Vsub of the substrate is basically equal to the low-level voltage V OFF applied to the control node.

[0325] The bidirectional switching device 61 of Fig. 61 is formed by integrating a nitride-based bidirectional transistor Qm, a first substrate coupling transistor Q1, and a resistor R1 in an IC chip.

[0326] Figs. 63 and 64A to 64E are structural diagrams showing a bidirectional switching device 61a based on the circuit diagram of Fig. 61. Fig. 63 is a partial layout diagram showing the bidirectional switching device 61a showing the relationship among some elements constituting the transistors and resistors in the bidirectional switching device 61a. Figs. 64A to 64E are cross-sectional views along lines A - A’, B - B’, C - C’, D - D’, and E - E’ of Fig. 63, respectively. The bidirectional switching device 61a has a layered structure similar to the layered structure of the bidirectional switching device 21a. For ease of understanding, the same reference symbols and signs are attached to the same elements, and further detailed descriptions are omitted.

[0327] Referring to FIGS. 63 and 64A to 64E, the bidirectional switching device 61a includes a substrate 102, a first nitride semiconductor layer 104, a second nitride semiconductor layer 106, a gate structure 110, S / D electrodes 116, a first passivation layer 124, a passivation layer 126, a third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more second conductive traces 146, a protective layer 154, one or more gallium through vias (TGVs) 162, and one or more conductive pads 170. The conductive pads 170 are arranged to be electrically connected to an external element (e.g., an external circuit).

[0328] The conductive traces 142 or 146, the conductive vias 132 or 136, and the TGVs 162 are electrically connected to different layers / elements and arranged to form a nitride-based bidirectional transistor Qm, a first substrate coupling transistor Q1, and a resistor R1.

[0329] The conductive pads 170 include a control pad CTRL arranged as a control node, a first power / load pad P / L1 arranged as a first power / load node, and a second power / load pad P / L2 arranged as a second power / load node.

[0330] Referring to FIG. 64A. The S / D electrodes 116 include at least one first S / D electrode 116a, and the first S / D electrode 116a is electrically connected to the first power / load pad and arranged as a first source / drain terminal of the nitride-based bidirectional transistor Qm and a drain terminal of the first substrate coupling transistor Q1. The first S / D electrode 116a is connected to the first power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0331] Refer to FIG. 64B. The S / D electrode 116 includes at least one second S / D electrode 116b, and the second S / D electrode 116b is electrically connected to the second power / load pad and is arranged as the second source / drain terminal of the nitride-based bidirectional transistor Qm. The second S / D electrode 116b is connected to the second power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0332] Refer to FIG. 64C. The gate structure 110 includes at least one first gate structure 110a, and the first gate structure 110a is electrically connected to the control pad and is arranged as the main gate terminal of the nitride-based bidirectional transistor Qm. The first gate structure 110a is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0333] The gate structure 110 further includes at least one second gate structure 110b, and the second gate structure 110b is electrically connected to the control pad and is arranged as the gate terminal of the first substrate coupling transistor Q1. The second gate structure 110b is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0334] Refer to FIG. 64D. The S / D electrode 116 includes at least one third S / D electrode 116c, and the third S / D electrode 116c is electrically connected to the substrate 102 and is arranged as the source terminal of the first substrate coupling transistor Q1. The third S / D electrode 116c is electrically connected to the substrate via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

[0335] Preferably, the second S / D electrode 116b is adjacent to the first S / D electrode 116a, and the first gate structure 110a is interposed between the first S / D electrode 116a and the second S / D electrode 116b.

[0336] Preferably, the third S / D electrode 116c is adjacent to the first S / D electrode 116a, and the second gate structure 110b is interposed between the first S / D electrode 116a and the third S / D electrode 116c.

[0337] Referring to FIGS. 63 and 64E. The bidirectional switching device 61a further includes a resistance element 180a. The resistance element 180a includes a first end 181a electrically connected to the substrate 102 and serving as a first terminal of the resistor R1, and a second end 182a electrically connected to the control pad and serving as a second terminal of the resistor R1.

[0338] The resistance element 180a is disposed at the same layer location of the 2DEG region adjacent to the hetero-junction interface between the first nitride semiconductor layer 104 and the second nitride semiconductor layer 106. The first end 181a is electrically coupled to the substrate 102 via at least one ohmic contact element 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182a is electrically connected to the control pad via at least one ohmic contact element 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0339] The manufacturing method of the bidirectional switching device 61a is similar to that of the bidirectional switching device 21a, and thus includes the steps shown in FIGS. 6A to 6K. Regarding the difference, between the steps shown in FIGS. 6A and 6B, the resistor element 180a is formed by patterning the 2DEG region adjacent to the hetero-junction interface between the first nitride semiconductor layer 104 and the second nitride semiconductor layer 106 by ion implantation.

[0340] FIGS. 65 and 66 are structural diagrams showing a bidirectional switching device 61b according to another embodiment based on the circuit diagram of FIG. 61. FIG. 65 is a partial layout diagram showing the bidirectional switching device 61b showing the relationship among some elements constituting the transistor portion and the resistor in the bidirectional switching device 61b. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 65 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 63, FIGS. 64A to 64D can be referred to. The cross-sectional view along line E-E' in FIG. 65 is shown in FIG. 66. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 63, 64A to 64E, and FIGS. 65 and 66, and further detailed description is omitted.

[0341] Referring to FIGS. 65 and 66. The bidirectional switching device 61b includes a resistor element 180b. The resistor element 180b includes a first end 181b that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182b that is electrically connected to the control pad and serves as the second terminal of the resistor R1.

[0342] The bidirectional switching device 61b is similar to the bidirectional switching device 61a. The difference is that the resistive element 180b is disposed on the second nitride-based semiconductor layer 106 and is made of the same material as the gate structure 110. The first end 181b is electrically coupled to the substrate 102 via at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 161. The second end 182b is electrically connected to the control pad via at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0343] Since the manufacturing method of the bidirectional switching device 61b is similar to that of the bidirectional switching device 21b, it includes the steps shown in FIGS. 6A to 6K. The difference is that in the step shown in FIG. 6C, the gate structure 110 and the resistive element 180b are simultaneously formed by patterning the blanket semiconductor layer 111 and the blanket gate electrode layer 113.

[0344] FIGS. 67 and 68 are structural diagrams showing the bidirectional switching device 61b according to another embodiment based on the circuit diagram of FIG. 61. FIG. 67 is a partial layout diagram showing the bidirectional switching device 61b showing the relationship among some elements constituting the transistor portion and the resistor in the bidirectional switching device 61b. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 67 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 63, FIGS. 64A to 64D can be referred to. The cross-sectional view along line E-E' in FIG. 67 is shown in FIG. 68. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 63, 64A to 64E, and FIGS. 67 and 68, and further detailed description is omitted.

[0345] Refer to FIGS. 67 and 68. The bidirectional switching device 61c includes a resistive element 180c. The resistive element 180c includes a first end 181c electrically connected to the substrate 102 and serving as the first terminal of the resistor R1, and a second end 182c electrically connected to the control pad and serving as the second terminal of the resistor R1.

[0346] The bidirectional switching device 61c is similar to the bidirectional switching device 61a. Regarding the difference, the resistive element 180c is arranged on the 124 and manufactured from the same material as the S / D electrode 116. The first end 181c is electrically coupled to the substrate 102 via at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182c is electrically connected to the control pad via at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146. Static layer Refer to FIGS. 6A to 6K. Since the manufacturing method of the bidirectional switching device 61c is similar to that of the bidirectional switching device 21c, it includes the steps shown in FIGS. 6A to 6K. Regarding the difference, in the step shown in FIG. 6E, the blanket conductive layer 115 is patterned to simultaneously form the S / D electrode 116 and the resistive element 180c.

[0347] Refer to FIGS. 6A to 6K. Since the manufacturing method of the bidirectional switching device 61c is similar to that of the bidirectional switching device 21c, it includes the steps shown in FIGS. 6A to 6K. Regarding the difference, in the step shown in FIG. 6E, the blanket conductive layer 115 is patterned to simultaneously form the S / D electrode 116 and the resistive element 180c.

[0348] Figures 69 and 70 are structural diagrams showing a bidirectional switching device 61b according to another embodiment based on the circuit diagram of FIG. 61. FIG. 69 is a partial layout diagram showing the bidirectional switching device 61b showing the relationship among some elements constituting the transistor part and resistors in the bidirectional switching device 61b. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 69 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 63, FIGS. 64A to 64D can be referred to. The cross-sectional view along line E-E' in FIG. 69 is shown in FIG. 70. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 63, 64A to 64E, and FIGS. 69 and 70, and further detailed description is omitted.

[0349] Referring to FIGS. 69 and 70. The bidirectional switching device 61d includes a resistive element 180d. The resistive element 180d includes a first end 181d electrically connected to the substrate 102 and serving as a first terminal of the resistor R1, and a second end 182d electrically connected to the control pad and serving as a second terminal of the resistor R1.

[0350] The bidirectional switching device 61d is similar to the bidirectional switching device 61a, and regarding the difference, the resistive element 180d is Static layer arranged within 126. Static layer 126 is divided into a lower layer 126a below the resistive element 180d and an upper layer 126b above the resistive element 180d. In other words, the resistive element 180d is sandwiched between the first layer 126a and the lower layer 126a and the upper layer 126b. The first end 181d is electrically coupled to the substrate 102 via at least one third conductive via 134, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182e is electrically connected to the control pad via at least one third conductive via 134, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0351] The manufacturing method of the bidirectional switching device 61d is similar to that of the bidirectional switching device 21d, and thus includes the steps shown in FIGS. 6A to 6K. Regarding the differences, the lower passive layer 126a is laminated on the passive layer 124, and the blanket metal / metal compound layer 143 is laminated and patterned on the lower passive layer 126a to form the resistance element 180d. The upper passive layer 126b is laminated on the lower passive layer 126a to cover the resistance element 180d, and one or more third conductive vias 134 are formed in the upper passive layer 126b and electrically coupled to the resistance element 180d.

[0352] FIGS. 71 and 72 are structural diagrams showing a bidirectional switching device 61b according to another embodiment based on the circuit diagram of FIG. 61. FIG. 71 is a partial layout diagram showing the bidirectional switching device 61b showing the relationship among some elements constituting the transistor portion and the resistor in the bidirectional switching device 61b. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 71 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 63, FIGS. 64A to 64D can be referred to. The cross-sectional view along line E-E' in FIG. 71 is shown in FIG. 72. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 63, 64A to 64E, and FIGS. 71 and 72, and further detailed description is omitted.

[0353] Referring to FIGS. 71 and 72. The bidirectional switching device 61e includes a resistance element 180e. The resistance element 180e includes a first end 181e electrically connected to the substrate 102 and serving as the first terminal of the resistor R1, and a second end 182e electrically connected to the control pad and serving as the second terminal of the resistor R1.

[0354] The bidirectional switching device 61e is similar to the bidirectional switching device 61a. Regarding the differences, the resistance element 180e is disposed on the second Static layer 126 and is made of the same material as the conductive trace 142. The first end 181e has at least one The It is electrically coupled to the substrate 102 via two conductive vias 136, at least one second conductive trace 146, and at least one TGV 162. The second end 182e is electrically connected to a control pad via at least one second conductive via 136 and at least one second conductive trace 146.

[0355] Since the manufacturing method of the bidirectional switching device 61e is similar to that of the bidirectional switching device 21e, it includes the steps shown in FIGS. 6A to 6K. Regarding the differences, in the step shown in FIG. 6G, the conductive trace 142 and the resistor element 180e are simultaneously formed by patterning the blanket conductive layer 141.

[0356] FIGS. 73 and 74 are structural diagrams showing a bidirectional switching device 61b according to another embodiment based on the circuit diagram of FIG. 61. FIG. 73 is a partial layout diagram showing the bidirectional switching device 61b showing the relationship among some elements constituting the transistor and the resistor in the bidirectional switching device 61b. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 73 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 63, FIGS. 64A to 64D can be referred to. The cross-sectional view along line E-E' in FIG. 73 is shown in FIG. 74. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 63, 64A to 64E, and FIGS. 73 and 74, and further detailed description is omitted.

[0357] Referring to FIGS. 73 and 74. The bidirectional switching device 61f includes a resistor element 180e. The resistor element 180e includes a first end 181e that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182e that is electrically connected to a control pad and serves as the second terminal of the resistor R1.

[0358] The bidirectional switching device 61f is similar to the bidirectional switching device 61a. Regarding the differences, the resistor element 180f is the third Static layerIt is arranged on 128 and is made of the same material as the conductive trace 146. The first end 181f is electrically coupled to the substrate 102 via at least one TGV 162. The second end 182f is electrically connected to a control pad.

[0359] The manufacturing method of the bidirectional switching device 61f is similar to that of the bidirectional switching device 21f, and thus includes the steps shown in FIGS. 6A to 6K. Regarding the difference, in the step shown in FIG. 6J, the conductive trace 146 and the resistive element 180f are simultaneously formed by patterning the blanket conductive layer 145.

[0360] FIG. 75A is a circuit diagram showing a bidirectional switching device 62 according to some embodiments based on the circuit block diagram of FIG. 75.

[0361] Referring to FIG. 75A. The first potential stabilizing element F1 includes a first substrate coupling transistor Q1. The first substrate coupling transistor Q1 has a first gate terminal G1 electrically connected to a control node, a first drain terminal D1 electrically connected to a first power / load node, and a first source terminal S1 electrically connected to a main substrate.

[0362] The first substrate coupling transistor Q1 is composed of each type of transistor, including but not limited to GaN HEMT, Si MOSFET, insulated gate bipolar transistor (IGBT), junction gate field effect transistor (JFET), and static induction transistor (SIT).

[0363] The second potential stabilizing element F2 may be a rectifying element, for example, a diode D1, and has a positive terminal connected to the main substrate and a negative terminal connected to the control node.

[0364] Refer to FIG. 75B. The diode D1 is replaced by a rectifying transistor Q3 to form a bidirectional switching device 63. The rectifying transistor Q3 has a gate terminal G3 and a source terminal S3 both connected to the main substrate, and a drain terminal D3 connected to the control node.

[0365] FIGS. 76A and 76B are operation mechanism diagrams showing the bidirectional switching device 62 in the first operation mode (the voltage V applied by the first power / load node to the second power / load node is L a higher voltage V H and is biased downward).

[0366] Refer to FIG. 76A. When a high-level voltage V ON is applied to the control node to turn on the bidirectional transistor Qm and the first substrate coupling transistor Q1, the diode D1 is reverse-biased when current reaches the diode D1 from the control node to the second power / load node. Subsequently, the substrate potential Vsub is calculated by the following formula: Vsub = V L +Vm,on+(V ON -V L -Vm,on)*Rs1,on / (Rs1,on + R RV ). Here, R RV is the reverse resistance of the diode D1, Rs1,on is the on-resistance of the first substrate coupling transistor Q1, and Vm,on is the drain-source voltage when the bidirectional transistor Qm is turned on. Since Vm,on is extremely small and R RV is much larger than Rs1,on, the substrate potential Vsub is basically equal to the voltage V L applied to the second power / load node.

[0367] Refer to FIG. 76B. The low-level voltage V OFFWhen applied to the control node to turn off the bidirectional transistor Qm and the first substrate coupling transistor Q1, the diode D1 is forward-biased when current reaches the control node from the first power / load node and flows through the diode D1. Subsequently, the potential Vsub of the substrate is calculated by the following formula: Vsub = V OFF +(V H - V OFF )*R FW / (R FW +Rs1,off). Here, R FW is the forward resistance of the diode D1. Since R FW is much smaller than Rs1,off, the potential Vsub of the substrate is basically equal to the low-level voltage V OFF applied to the control node.

[0368] Figures 76C and 76D are operation mechanism diagrams showing the bidirectional switching device 62 in the second operation mode (the second power / load node is forward-biased under a voltage V L higher than the voltage V H applied to the first power / load node).

[0369] Referring to Figure 76C. When a high-level voltage V ON is applied to the control node to turn on the bidirectional transistor Qm and the first substrate coupling transistor Q1, the diode D1 is forward-biased when current reaches the first power / load node from the control node and flows through the diode D1. Subsequently, the potential Vsub of the substrate is calculated by the following formula: Vsub = V L +(V ON -V L )*Rs1,on / (Rs1,on+R RV ). Since Rs1,on is much smaller than R RV , the potential Vsub of the substrate is basically equal to the voltage V L applied to the first power / load node.

[0370] Referring to Figure 76D. The low-level voltage V OFFWhen applied to the control node to turn off the bidirectional transistor Qm and the first substrate coupling transistor Q1, the diode D1 is reverse-biased when current reaches the control node from the second power / load node and flows through the diode D1, and the potential Vsub of the substrate is calculated by the following formula: Vsub = V OFF +(V H -Vm,off-V OFF )* R FW / (Rs1,off+ R FW ). Here, Vm,off is the drain-source voltage when the bidirectional transistor Qm is turned off. Since Rs1,off is much larger than R FW , the potential Vsub of the substrate is basically equal to the low-level voltage V OFF applied to the control node.

[0371] FIGS. 77 and 78A to 78D are structural diagrams showing the bidirectional switching devices 62 / 63 based on the circuit diagrams of FIGS. 75A / 75B. FIG. 77 is a partial layout diagram showing the bidirectional switching device 62 / 63 showing the relationship of some elements constituting a part of the transistors in the bidirectional switching device 62 / 63. FIGS. 78A to 78D are cross-sectional views taken along lines A-A', B-B', C-C', and D-D' of FIG. 77, respectively. For ease of understanding, the same structural elements are labeled with the same reference symbols and signs, and further detailed descriptions are omitted.

[0372] Referring to FIGS. 77 and 78A to 78D, the bidirectional switching device 62 / 63 includes a substrate 102, a first nitride-based semiconductor layer 104, a second nitride-based semiconductor layer 106, a gate structure 110, S / D electrodes 116, a first passivation layer 124, a passivation layer 126, a third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more second conductive traces 146, a protective layer 171, one or more gallium through vias (TGVs) 162, and a conductive pad 170.

[0373] The conductive pad 170 includes a control pad CTRL arranged as a control node, a first power / load pad P / L1 arranged as a first power / load node, and a second power / load pad P / L2 arranged as a second power / load node.

[0374] The conductive traces 142 or 146, the conductive vias 132 or 136, and the TGV 162 are electrically connected to different layers / elements and arranged to form a nitride-based bidirectional transistor Qm, a first substrate coupling transistor Q1, and a diode D1 / rectifier transistor Q3.

[0375] Referring to FIG. 78A. The S / D electrode 116 includes at least one first S / D electrode 116a, and the first S / D electrode 116a is electrically connected to a first power / load pad and arranged as a first source / drain terminal of a nitride-based bidirectional transistor Qm and a drain terminal of a first substrate coupling transistor Q1. The first S / D electrode 116a is connected to the first power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0376] In this exemplary structure, the same S / D electrode is shared by the nitride-based bidirectional transistor Qm and the first substrate coupling transistor Q1, enabling the chip size to be minimized. In some embodiments, different S / D electrodes are used as the first source / drain terminal of the nitride-based bidirectional transistor Qm and the drain terminal of the first substrate coupling transistor Q1.

[0377] Refer to FIG. 78B. The S / D electrode 116 includes at least one second S / D electrode 116b, and the second S / D electrode 116b is electrically connected to the second power / load pad and is arranged as the second source / drain terminal of the nitride-based bidirectional transistor Qm. The second S / D electrode 116b is connected to the second power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0378] Refer to FIG. 78C. The gate structure 110 includes at least one first gate structure 110a, and the first gate structure 110a is electrically connected to the control pad and is arranged as the main gate terminal of the nitride-based bidirectional transistor Qm. The first gate structure 110a is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0379] The gate structure 110 further includes at least one second gate structure 110b, and the second gate structure 110b is electrically connected to the control pad and is arranged as the gate terminal of the first substrate coupling transistor Q1. The second gate structure 110b is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0380] The S / D electrode 116 further includes at least one fourth S / D electrode 116d, and the fourth S / D electrode 116d is electrically connected to the control pad and is arranged as the drain terminal of the rectifier transistor Q3 (or the negative terminal of the diode D1). The third S / D electrode 116c is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0381] Refer to FIG. 78D. The S / D electrode 116 includes at least one third S / D electrode 116c, and the third S / D electrode 116c is electrically connected to the substrate 102 and is arranged as the source terminal of the first substrate coupling transistor Q1 and the source terminal of the rectifying transistor Q3. The third S / D electrode 116c is electrically connected to the substrate via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

[0382] The gate structure 110 further includes at least one third gate structure 110c, and the third gate structure 110c is electrically connected to the substrate and is arranged as the gate terminal of the rectifying transistor Q3. The third gate structure 110c is connected to the substrate via at least one conductive via 132, at least one conductive trace 142, at least one conductive trace 146, and at least one TGV 162.

[0383] In other words, the positive terminal of the diode D1 is formed by the electrical short circuit of the third S / D electrode 116c and the third gate structure 110c.

[0384] Preferably, the second S / D electrode 116b is adjacent to the first S / D electrode 116a, and the first gate structure 110a is interposed between the first S / D electrode 116a and the second S / D electrode 116b.

[0385] Preferably, the third S / D electrode 116c is adjacent to the first S / D electrode 116a, and the second gate structure 110b is interposed between the first S / D electrode 116a and the third S / D electrode 116c.

[0386] Preferably, the third S / D electrode 116c is adjacent to the fourth S / D electrode 116d, and the third gate structure 110c is interposed between the fourth S / D electrode 116d and the third S / D electrode 116c.

[0387] The manufacturing method of the bidirectional switching device 62 / 63 is similar to that of the bidirectional switching device 11, and thus includes the steps shown in FIGS. 6A to 6K.

[0388] FIG. 79 is a circuit block diagram showing a bidirectional switching device 7 having substrate potential management capabilities according to some embodiments of the present invention.

[0389] As shown in FIG. 79, the bidirectional switching device 7 has a control node CTRL, a first power / load node P / L1, a second power / load node P / 2, and a main substrate.

[0390] The bidirectional switching device 7 includes a nitride-based bidirectional transistor Qm and a substrate potential management circuit arranged to manage the potential of the main substrate of the bidirectional switching device 7.

[0391] The bidirectional transistor Qm has a main gate terminal Gm electrically connected to the control node, a first source / drain terminal S / D1 electrically connected to the first power / load node, a second source / drain terminal S / D2 electrically connected to the second power / load node, and a main substrate terminal SUB electrically connected to the main substrate.

[0392] The substrate potential management circuit includes a first potential stabilizing element F1, and the first potential stabilizing element F1 has a first conduction terminal electrically connected to the first power / load node and a second conduction terminal electrically connected to the main substrate.

[0393] The substrate potential management circuit further includes a second potential stabilizing element F2, and the second potential stabilizing element F2 has a first conduction terminal electrically connected to the second power / load node and a second conduction terminal electrically connected to the main substrate.

[0394] The substrate potential management circuit further includes a third potential stabilizing element F3, and the third potential stabilizing element F3 has a first conduction terminal connected to the main substrate and a second conduction terminal connected to the control node.

[0395] When a high-level voltage is applied to the control node, the first potential stabilizing element F1 has a first resistance lower than the third resistance of the third potential stabilizing element F3, the second potential stabilizing element F2 has a second resistance lower than the third resistance, and the potential of the main board basically becomes equal to the lower of the potentials of the first power / load node and the second power / load node.

[0396] When a low-level voltage is applied to the control node, the first resistance becomes higher than the third resistance, the second resistance becomes higher than the third resistance, and the potential of the main board basically becomes equal to the low-level voltage.

[0397] FIG. 80A is a circuit diagram showing a bidirectional switching device 71 according to some embodiments based on the circuit block diagram of FIG. 79.

[0398] Referring to FIG. 80A. The first potential stabilizing element F1 includes a first diode D1, and the first diode D1 has a negative terminal electrically connected to the first power / load node and a positive terminal electrically connected to the main board.

[0399] The second potential stabilizing element F2 includes a second diode D2, and the second diode D2 has a negative terminal electrically connected to the second power / load node and a positive terminal electrically connected to the main board.

[0400] Referring to FIG. 80B. By replacing the diode D1 with a rectifying transistor Q3 and replacing the diode D2 with a rectifying transistor Q4, a bidirectional switching device 72 is formed. The rectifying transistor Q3 has a gate terminal G3 and a source terminal S3 both connected to the main board, and a drain terminal D3 connected to the control node. The rectifying transistor Q4 has a gate terminal G4 and a source terminal S4 both connected to the main board, and a drain terminal D4 connected to the control node.

[0401] Transistors Q3 and Q4 are composed of transistors of each type, including, but not limited to, GaN HEMT, Si MOSFET, insulated gate bipolar transistor (IGBT), junction gate field effect transistor (JFET), and static induction transistor (SIT).

[0402] Referring to FIGS. 80A and 80B. The third potential stabilizing element F3 may be a non-rectifying element, for example, a resistor R1, and has a first terminal connected to the main substrate and a second terminal connected to the control node.

[0403] FIGS. 81A and 81B are operation mechanism diagrams showing the bidirectional switching device 71 in the first operation mode (where the first power / load node is biased at a voltage V L higher than the voltage V H ).

[0404] Referring to FIG. 81A. When a high-level voltage V ON is applied to the control node to turn on the bidirectional transistor Qm, a current reaches from the control node to the second power / load node and flows through the resistor R1, the diode D1, and the diode D2. Subsequently, the potential Vsub of the substrate is calculated by the following formula: Vsub = V L + (V ON -V L ) * R FW2 / (R FW2 +R). Here, R is the resistance of the resistor R1, and R FW2 is the forward resistance of the diode D2. Since R FW2 is much smaller than R, the potential Vsub of the substrate is basically equal to the voltage V L applied to the second power / load node.

[0405] Referring to FIG. 81B. When a low-level voltage V OFF is applied to the control node to turn off the bidirectional transistor Qm, a current reaches from the first power / load node to the control node and flows through the diode D1 and the resistor R1. The potential Vsub of the substrate is calculated by the following formula: Vsub = VOFF +(V H - V OFF )*R / (R + R RV1 ). Here, R RV1 is the reverse resistance of the diode D1. Since R RV1 is much larger than R, the potential Vsub of the substrate is basically equal to the low-level voltage V OFF applied to the control node.

[0406] FIGS. 81C and 81D are operation mechanism diagrams showing the bidirectional switching device 71 in the second operation mode (the second power / load node is biased under a voltage V L higher than the voltage V H applied to the first power / load node).

[0407] Referring to FIG. 81C. When a high-level voltage V ON is applied to the control node to turn on the bidirectional transistor Qm, a current reaches from the control node to the first power / load node and flows through the resistor R1, the diode D1, and the diode D2. Subsequently, the potential Vsub of the substrate is calculated by the following formula: Vsub = V L + (V ON - V L ) * R FW1 / (R FW1 + R). Here, R FW1 is the forward resistance of the diode D1. Since R FW1 is much smaller than R, the potential Vsub of the substrate is basically equal to the voltage V L applied to the second power / load node.

[0408] Referring to FIG. 81D. When a low-level voltage V OFF is applied to the control node to turn off the bidirectional transistor Qm, a current reaches from the second power / load node to the control node and flows through the diode D2 and the resistor R1. The potential Vsub of the substrate is calculated by the following formula: Vsub = V OFF + (V H - V OFF ) * R / (R + R RV2 ). Here, R RV2is the reverse resistance of diode D2. R RV2 is much larger than R, so the potential Vsub of the substrate is basically equal to the low-level voltage V OFF applied to the control node.

[0409] Since the operation mechanism of the bidirectional switching device 72 is similar to that of the bidirectional switching device 71, and for the sake of easy understanding, further detailed description is omitted.

[0410] The bidirectional switching devices 71 / 72 in FIGS. 80A / 80B are formed by integrating a nitride-based bidirectional transistor Qm, diodes D1 / rectifying transistor Q3, diodes D2 / rectifying transistor Q4, and a resistor R1 in an IC chip.

[0411] FIGS. 82 and 83A to 83E are structural diagrams showing the bidirectional switching devices 71a / 72a based on the circuit diagrams of FIGS. 80A / 80B. FIG. 82 is a partial layout diagram showing the bidirectional switching devices 71a / 72a showing the relationship among some elements constituting the transistor part and the resistor in the bidirectional switching devices 71a / 72a. FIGS. 83A to 83E are cross-sectional views taken along lines A-A', B-B', C-C', D-D', and E-E' of FIG. 82, respectively. The bidirectional switching devices 71a / 72a have a layered structure similar to the layered structure of the bidirectional switching device 21a. For the sake of easy understanding, the same reference numerals and symbols are assigned to the same elements, and further detailed description is omitted.

[0412] Referring to FIGS. 82 and 83A to 83E, the bidirectional switching device 71a / 72a includes a substrate 102, a first nitride semiconductor layer 104, a second nitride semiconductor layer 106, a gate structure 110, S / D electrodes 116, a first passivation layer 124, a passivation layer 126, a third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more second conductive traces 146, a protective layer 154, one or more gallium through vias (TGVs) 162, and one or more conductive pads 170. The conductive pads 170 are arranged to be electrically connected to an external element (e.g., an external circuit).

[0413] The conductive traces 142 or 146, the conductive vias 132 or 136, and the TGVs 162 are electrically connected to different layers / elements and arranged to form a nitride-based bidirectional transistor Qm, a diode D1 / rectifying transistor Q3, a diode D2 / rectifying transistor Q4, and a resistor R1.

[0414] The conductive pads 170 include a control pad CTRL arranged as a control node, a first power / load pad P / L1 arranged as a first power / load node, and a second power / load pad P / L2 arranged as a second power / load node.

[0415] Referring to FIG. 83A. The S / D electrodes 116 include at least one first S / D electrode 116a, and the first S / D electrode 116a is electrically connected to the first power / load pad and arranged as a first source / drain terminal of the nitride-based bidirectional transistor Qm and a drain terminal of the rectifying transistor Q3 (or a negative terminal of the diode D1). The first S / D electrode 116a is connected to the first power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0416] In this exemplary structure, the same S / D electrode is shared by the nitride-based bidirectional transistor Qm and the rectifying transistor Q3, enabling the chip size to be minimized. In some embodiments, different S / D electrodes are used as the first source / drain terminal of the nitride-based bidirectional transistor Qm and the drain terminal of the rectifying transistor Q3.

[0417] Referring to FIG. 83B. The S / D electrode 116 includes at least one second S / D electrode 116b, and the second S / D electrode 116b is electrically connected to the second power / load pad and is arranged as the second source / drain terminal of the nitride-based bidirectional transistor Qm and the drain terminal of the rectifying transistor Q4 (or the negative terminal of the diode D2). The second S / D electrode 116b is connected to the second power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0418] In this exemplary structure, the same S / D electrode is shared by the nitride-based bidirectional transistor Qm and the rectifying transistor Q4, enabling the chip size to be minimized. In some embodiments, different S / D electrodes are used as the second source / drain terminal of the nitride-based bidirectional transistor Qm and the drain terminal of the rectifying transistor Q4.

[0419] Referring to FIG. 83C. The gate structure 110 includes at least one first gate structure 110a, and the first gate structure 110a is electrically connected to the control pad and is arranged as the main gate terminal of the nitride-based bidirectional transistor Qm. The first gate structure 110a is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0420] Refer to FIG. 83D. The gate structure 110 further includes at least one second gate structure 110b, and the second gate structure 110b is electrically connected to the substrate 102 and is arranged as the gate terminal of the rectifying transistor Q3. The S / D electrode 116 includes at least one third S / D electrode 116c, and the third S / D electrode 116c is electrically connected to the substrate 102 and is arranged as the source terminal of the rectifying transistor Q3. In other words, the positive terminal of the diode D1 is formed by the electrical short circuit of the second gate structure 110b and the third S / D electrode 116c.

[0421] The second gate structure 110b is connected to the substrate 102 via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

[0422] The third S / D electrode 116c is electrically connected to the substrate 102 via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

[0423] The gate structure 110 further includes at least one third gate structure 110c, and the third gate structure 110c is electrically connected to the substrate 102 and is arranged as the gate terminal of the rectifying transistor Q4. The S / D electrode 116 further includes at least one fourth S / D electrode 116d, and the fourth S / D electrode 116d is electrically connected to the substrate 102 and is arranged as the source terminal of the rectifying transistor Q4. In other words, the positive terminal of the diode D2 is formed by the electrical short circuit of the third gate structure 110c and the fourth S / D electrode 116d.

[0424] The third gate structure 110c is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0425] The fourth S / D electrode 116d is electrically connected to the substrate via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

[0426] Preferably, the second S / D electrode 116b is adjacent to the first S / D electrode 116a, and the first gate structure 110a is interposed between the first S / D electrode 116a and the second S / D electrode 116b.

[0427] Preferably, the third S / D electrode 116c is adjacent to the first S / D electrode 116a, and the second gate structure 110b is interposed between the first S / D electrode 116a and the third S / D electrode 116c.

[0428] Preferably, the second S / D electrode 116d is adjacent to the fourth S / D electrode 116d, and the third gate structure 110b is interposed between the second S / D electrode 116b and the fourth S / D electrode 116d.

[0429] Referring to FIGS. 82 and 83E. The bidirectional switching device 71a / 72a further includes a resistor element 180a. The resistor element 180a includes a first end 181a that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182a that is electrically connected to the control pad and serves as the second terminal of the resistor R1.

[0430] The resistive element 180a is disposed at the same layer location of the 2DEG region adjacent to the hetero-junction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106. The first end 181a is electrically coupled to the substrate 102 via at least one ohmic contact element 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182a is electrically connected to the control pad via at least one ohmic contact element 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0431] Since the manufacturing method of the bidirectional switching device 71a / 72a is similar to that of the bidirectional switching device 21a, it includes the steps shown in FIGS. 6A to 6K. Regarding the differences, during the steps shown in FIGS. 6A and 6B, the resistive element 180a is formed by patterning the 2DEG region adjacent to the hetero-junction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106 by ion implantation.

[0432] FIGS. 84 and 85 are structural diagrams showing a bidirectional switching device 71b / 72b according to another embodiment based on the circuit diagrams of FIGS. 80A / 80B. FIG. 84 is a partial layout diagram showing the bidirectional switching device 71b / 72b showing the relationship among some elements constituting the transistor and the resistor in the bidirectional switching device 71b / 72b. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 84 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 82, FIGS. 83A to 83D can be referred to. The cross-sectional view along line E-E' in FIG. 84 is shown in FIG. 85. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 82, 83A to 83E, and FIGS. 84 and 85, and further detailed description is omitted.

[0433] Refer to FIGS. 84 and 85. The bidirectional switching device 71b / 72b includes a resistive element 180b. The resistive element 180b has a first end 181b electrically connected to the substrate 102 and serving as the first terminal of the resistor R1, and a second end 182b electrically connected to the control pad and serving as the second terminal of the resistor R1.

[0434] The bidirectional switching device 71b / 72b is similar to the bidirectional switching device 71a / 72a. The difference is that the resistive element 180b is disposed on the second nitride semiconductor layer 106 and is made of the same material as the gate structure 110. The first end 181b is electrically coupled to the substrate 102 via at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182b is electrically connected to the control pad via at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0435] The manufacturing method of the bidirectional switching device 71b / 72b is similar to that of the bidirectional switching device 21b and includes the steps shown in FIGS. 6A to 6K. The difference is that in the step shown in FIG. 6C, the gate structure 110 and the resistive element 180b are simultaneously formed by patterning the blanket semiconductor layer 111 and the blanket gate electrode layer 113.

[0436] FIGS. 86 and 87 are structural diagrams showing a bidirectional switching device 71c / 72c according to another embodiment based on the circuit diagrams of FIGS. 80A / 80B. FIG. 86 is a partial layout diagram showing the bidirectional switching device 71c / 72c, which shows the relationship among some elements constituting the transistor part and resistors in the bidirectional switching device 71c / 72c. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 86 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 82, FIGS. 83A to 83D can be referred to. The cross-sectional view along line E-E' in FIG. 86 is shown in FIG. 87. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 82, 83A to 83E, and FIGS. 86 and 87, and further detailed description is omitted.

[0437] Referring to FIGS. 86 and 87. The bidirectional switching device 71c / 72c includes a resistance element 180c. The resistance element 180c includes a first end 181c electrically connected to the substrate 102 and serving as the first terminal of the resistor R1, and a second end 182c electrically connected to the control pad and serving as the second terminal of the resistor R1.

[0438] The bidirectional switching device 71c / 72c is similar to the bidirectional switching device 71a / 72a, and the difference is that the resistance element 180c is disposed on the Static layer 124 and is made of the same material as the S / D electrode 116. The first end 181c is electrically coupled to the substrate 102 via at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182c is electrically connected to the control pad via at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0439] The manufacturing method of the bidirectional switching device 71c / 72c is similar to that of the bidirectional switching device 21c, and thus includes the steps shown in FIGS. 6A to 6K. Regarding the difference, in the step shown in FIG. 6E, the blanket conductive layer 115 is patterned to simultaneously form the S / D electrodes 116 and the resistor element 180c.

[0440] FIGS. 88 and 89 are structural diagrams showing bidirectional switching devices 71d / 72d according to other embodiments based on the circuit diagrams of FIGS. 80A / 80B. FIG. 88 is a partial layout diagram showing the bidirectional switching device 71d / 72d, which shows the relationship among some elements constituting the transistor portion and the resistor in the bidirectional switching device 71d / 72d. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 88 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 82, FIGS. 83A to 83D can be referred to. The cross-sectional view along line E-E' in FIG. 88 is shown in FIG. 89. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 82, 83A to 83E, and FIGS. 88 and 89, and further detailed description is omitted.

[0441] Referring to FIGS. 88 and 89. The bidirectional switching device 71d / 72d includes a resistor element 180d. The resistor element 180d includes a first end 181d that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182d that is electrically connected to the control pad and serves as the second terminal of the resistor R1.

[0442] The bidirectional switching device 71d / 72d is similar to the bidirectional switching device 71a / 72a. Regarding the difference, the resistor element 180d is Static layer arranged within 126. Static layer126 is divided into a lower layer 126a below the resistive element 180d and an upper layer 126b above the resistive element 180d. In other words, the resistive element 180d is sandwiched between the first layer 126a and the lower layer 126a and the upper layer 126b. The first end 181d is electrically coupled to the substrate 102 via at least one third conductive via 134, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182d is electrically connected to a control pad via at least one third conductive via 134, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0443] The manufacturing method of the bidirectional switching device 71d / 72d is similar to the manufacturing method of the bidirectional switching device 21d, and thus includes the steps shown in FIGS. 6A to 6K. Regarding the differences, the lower passive layer 126a is laminated on the passive layer 124, the blanket metal / metal compound layer 143 is laminated on the passive layer 126a and patterned to form the resistive element 180d, the upper passive layer 126b is laminated on the lower passive layer 126a to cover the resistive element 180d, and one or more third conductive vias 134 are formed in the upper passive layer 126b and electrically coupled to the resistive element 180d.

[0444] FIG. 90 and FIG. 91 are structural diagrams showing a bidirectional switching device 71e / 72e according to another embodiment based on the circuit diagrams of FIGS. 80A / 80B. FIG. 90 is a partial layout diagram showing the bidirectional switching device 71e / 72e, which shows the relationship among some elements constituting the transistor and resistors in the bidirectional switching device 71e / 72e. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 90 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 82, FIGS. 83A to 83D can be referred to. The cross-sectional view along line E-E' in FIG. 90 is shown in FIG. 91. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 82, 83A to 83E, and FIGS. 90 and 91, and further detailed descriptions are omitted.

[0445] Referring to FIGS. 90 and 91. The bidirectional switching device 71e / 72e includes a resistive element 180e. The resistive element 180e includes a first end 181e electrically connected to the substrate 102 and serving as the first terminal of the resistor R1, and a second end 182e electrically connected to the control pad and serving as the second terminal of the resistor R1.

[0446] The bidirectional switching device 71e / 72e is similar to the bidirectional switching device 71a / 72a. Regarding the difference, the resistive element 180e is Static layer arranged on 126 and manufactured of the same material as the conductive trace 142. The first end 181e is Less electrically coupled to the substrate 102 via at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162. The second end 182e is electrically connected to the control pad via at least one second conductive via 136 and at least one second conductive trace 146.

[0447] The manufacturing method of the bidirectional switching device 71e / 72e is similar to that of the bidirectional switching device 21e, and includes the steps shown in FIGS. 6A to 6K. Regarding the difference, in the step shown in FIG. 6G, the conductive trace 142 and the resistor element 180e are formed simultaneously by patterning the blanket conductive layer 141.

[0448] FIGS. 92 and 93 are structural diagrams showing the bidirectional switching devices 71f / 72f according to other embodiments based on the circuit diagrams of FIGS. 80A / 80B. FIG. 92 is a partial layout diagram showing the bidirectional switching device 71f / 72f showing the relationship among some elements constituting the transistor part and the resistor in the bidirectional switching device 71f / 72f. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 92 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 82, FIGS. 83A to 83D can be referred to. The cross-sectional view along line E-E' in FIG. 92 is shown in FIG. 93. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 82, 83A to 83E, and FIGS. 92 and 93, and further detailed description is omitted.

[0449] Referring to FIGS. 92 and 93. The bidirectional switching device 71f / 72f includes a resistor element 180e. The resistor element 180e includes a first end 181e electrically connected to the substrate 102 and serving as the first terminal of the resistor R1, and a second end 182e electrically connected to the control pad and serving as the second terminal of the resistor R1.

[0450] The bidirectional switching device 71f / 72f is similar to the bidirectional switching device 71a / 72a. Regarding the difference, the resistor element 180f is disposed on the third Static layer 128 and is made of the same material as the conductive trace 146. The first end 181f is electrically coupled to the substrate 102 via at least one TGV 162. The second end 182f is electrically connected to the control pad.

[0451] The manufacturing method of the bidirectional switching device 71f / 72f is similar to that of the bidirectional switching device 21f, and thus includes the steps shown in FIGS. 6A to 6K. Regarding the differences, in the step shown in FIG. 6J, the conductive trace 146 and the resistance element 180f are simultaneously formed by patterning the blanket conductive layer 145.

[0452] FIG. 94A is a circuit diagram showing a bidirectional switching device 73 according to some embodiments based on the circuit block diagram of FIG. 40.

[0453] Referring to FIG. 94A. The first potential stabilizing element F1 includes a first resistor R1, and the first resistor R1 has a first terminal electrically connected to the first power / load node and a second terminal electrically connected to the main substrate.

[0454] The second potential stabilizing element F2 includes a second resistor R2, and the second resistor R2 has a first terminal electrically connected to the second power / load node and a second terminal electrically connected to the main substrate.

[0455] The third potential stabilizing element F3 may be a rectifying element, for example, a diode D1, and has a positive terminal connected to the main substrate and a negative terminal connected to the control node.

[0456] Referring to FIG. 94B. The diode D1 is replaced by a rectifying transistor Q3 to form a bidirectional switching device 74. The rectifying transistor Q3 has a gate terminal G3 and a source terminal S3 both connected to the main substrate, and a drain terminal D3 connected to the control node.

[0457] The rectifying transistor Q3 is composed of each type of transistor, including, but not limited to, GaN HEMT, Si MOSFET, insulated gate bipolar transistor (IGBT), junction gate field effect transistor (JFET), and static induction transistor (SIT).

[0458] Figures 95A to 95B are operation mechanism diagrams showing the bidirectional switching device 73 in the first operation mode (the voltage V applied by the first power / load node to the second power / load node is L a higher voltage V H and is biased in this direction).

[0459] Refer to Figure 95A. When a high-level voltage V ON is applied to the control node to turn on the bidirectional transistor Qm, the diode D1 is reverse-biased when the current reaches the diode D1 from the control node to the second power / load node. Subsequently, the potential Vsub of the substrate is calculated by the following formula: Vsub = V L +(V ON -V L )*R2 / (R2 + R RV ). Here, R RV is the reverse resistance of the diode D1, and R2 is the resistance of the resistor R2. Since R2 is much smaller than R RV , the potential Vsub of the substrate is basically equal to the voltage V L applied to the second power / load node.

[0460] Refer to Figure 95B. When a low-level voltage V OFF is applied to the control node to turn off the bidirectional transistor Qm, the diode D1 is forward-biased when the current reaches the diode D1 from the first power / load node to the control node. The potential Vsub of the substrate is calculated by the following formula: Vsub = V OFF +(V H - V OFF )* R FW / (R FW + R1). Since R1 is much larger than R FW , the potential Vsub of the substrate is basically equal to the low-level voltage V OFF applied to the control node.

[0461] Figures 95C and 95D are in the second operation mode (the voltage V applied by the second power / load node to the first power / load node is L a higher voltage V HIt is an operation mechanism diagram showing a bidirectional switching device 73 in the case of being biased downward.

[0462] Refer to FIG. 95C. When a high-level voltage V ON is applied to the control node to turn on the bidirectional transistor Qm, the diode D1 is reverse-biased when the current reaches the diode D1 from the control node to the first power / load node, and subsequently, the potential Vsub of the substrate is calculated by the following formula: Vsub = V L + (V ON -V L )*R1 / (R1+R RV ). Here, R1 is the resistance of the resistor R1. Since R1 is much smaller than R RV , the potential Vsub of the substrate is basically equal to the voltage V L applied to the first power / load node.

[0463] Refer to FIG. 95D. When a low-level voltage V OFF is applied to the control node to turn off the bidirectional transistor Qm, the diode D1 is forward-biased when the current reaches the diode D1 from the second power / load node to the control node, and the potential Vsub of the substrate is calculated by the following formula: Vsub = V OFF +(V H - V OFF )* R FW / (R FW +R2). Since R2 is much larger than R FW , the potential Vsub of the substrate is basically equal to the low-level voltage V OFF applied to the control node.

[0464] The bidirectional switching device 73 / 74 is formed by integrating a nitride-based bidirectional transistor Qm, a resistor R1, a second resistor R2, and a diode D1 / rectifier transistor Q3 in an IC chip.

[0465] Figures 96 and 97A through 97D are structural diagrams showing the bidirectional switching devices 73a / 74a based on the circuit diagrams of FIGS. 94A / 94B. FIG. 96 is a partial layout diagram showing the bidirectional switching device 73a / 74a, which shows the relationship among the transistor portion and some elements constituting resistors in the bidirectional switching device 73a / 74a. FIGS. 97A through 97D are cross-sectional views taken along lines A-A', B-B', C-C', and D-D' of FIG. 96, respectively. The bidirectional switching device 73a / 74a has a layered structure similar to the layered structure of the bidirectional switching device 21a. For ease of understanding, the same structural elements are labeled with the same reference numerals and symbols, and further detailed descriptions are omitted.

[0466] Referring to FIGS. 96 and 97A through 97D, the bidirectional switching device 73a / 74a includes a substrate 102, a first nitride-based semiconductor layer 104, a second nitride-based semiconductor layer 106, a gate structure 110, S / D electrodes 116, a first passivation layer 124, a passivation layer 126, a third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more second conductive traces 146, a protective layer 154, one or more gallium through vias (TGVs) 162, and a conductive pad 170.

[0467] The conductive pad 170 includes a control pad CTRL arranged as a control node, a first power / load pad P / L1 arranged as a first power / load node, and a second power / load pad P / L2 arranged as a second power / load node.

[0468] The conductive traces 142 or 146, the conductive vias 132 or 136, and the TGVs 162 are electrically connected to different layers / elements and arranged to form a nitride-based bidirectional transistor Qm, a resistor R1, a second resistor R2, and a diode D1 / rectifier transistor Q3.

[0469] Refer to FIG. 97B. The gate structure 110 includes at least one first gate structure 110a, and the first gate structure 110a is electrically connected to a control pad and is arranged as the main gate terminal of the nitride-based bidirectional transistor Qm. The first gate structure 110a is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0470] Refer to FIGS. 97A and 97C. The S / D electrode 116 includes at least one first S / D electrode 116a, and the first S / D electrode 116a is electrically connected to a first power / load pad and is arranged as the first source / drain terminal of the nitride-based bidirectional transistor Qm. The first S / D electrode 116a is connected to the first power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0471] The S / D electrode 116 includes at least one second S / D electrode 116b, and the second S / D electrode 116b is electrically connected to a second power / load pad and is arranged as the second source / drain terminal of the nitride-based bidirectional transistor Qm. The second S / D electrode 116b is connected to the second power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0472] The gate structure 110 further includes at least one second gate structure 110b, and the second gate structure 110b is electrically connected to the substrate 102 and is arranged as the gate terminal of the rectifying transistor Q3. The S / D electrode 116 includes at least one third S / D electrode 116c, and the third S / D electrode 116c is electrically connected to the substrate 102 and is arranged as the source terminal of the rectifying transistor Q3. In other words, the positive terminal of the diode D1 is formed by the electrical short circuit of the second gate structure 110b and the third S / D electrode 116c.

[0473] The second gate structure 110b is connected to the substrate 102 via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

[0474] The third S / D electrode 116c is electrically connected to the substrate 102 via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and via at least one TGV 162.

[0475] Referring back to FIG. 97B. The S / D electrode 116 includes at least one fourth S / D electrode 116d, and the fourth S / D electrode 116d is electrically connected to the control pad and is arranged as the drain terminal of the rectifying transistor Q3 (or the negative terminal of the diode D1). The fourth S / D electrode 116d is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0476] Preferably, the second S / D electrode 116b is adjacent to the first S / D electrode 116a, and the first gate structure 110a is interposed between the first S / D electrode 116a and the second S / D electrode 116b.

[0477] Preferably, the third S / D electrode 116c is adjacent to the fourth S / D electrode 116d, and the second gate structure 110b is interposed between the fourth S / D electrode 116d and the third S / D electrode 116c. Refer back to FIGS. 96 and 97D. The bidirectional switching device 73a / 74a further includes a resistor element 180a for forming the resistors R1 and R2. Each resistor element 180a includes a first end 181a that is electrically connected to the first / second power / load pads and serves as the first terminal of the resistor R1 / R2, and a second end 182a that is electrically connected to the substrate 102 and serves as the second terminal of the resistor R1 / R2.

[0478] Each resistor element 180a is disposed at the same layer location in the 2DEG region adjacent to the hetero-junction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106. Each first end 181a is electrically coupled to the first / second power / load pads via at least one ohmic contact element 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, and at least one conductive trace 146. Each second end 182a is electrically connected to the substrate 102 via at least one ohmic contact element 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162.

[0479] Since the manufacturing method of the bidirectional switching device 73a / 74a is similar to the manufacturing method of the bidirectional switching device 21a, it includes the steps shown in FIGS. 6A to 6K. Regarding the difference, during the steps shown in FIGS. 6A and 6B, the resistor element 180a is formed by patterning the 2DEG region adjacent to the hetero-junction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106 by ion implantation.

[0480] FIGS. 98 and 99 are structural diagrams showing a bidirectional switching device 73b / 74b according to another embodiment based on the circuit diagrams of FIGS. 94A / 94B. FIG. 98 is a partial layout diagram showing the bidirectional switching device 73b / 74b, which shows the relationship among some elements constituting transistors and resistors in the bidirectional switching device 73b / 74b. Since the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 98 are the same as the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 96, respectively, FIGS. 97A to 97C can be referred to. The cross-sectional view along line D-D' in FIG. 98 is shown in FIG. 99. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 96, 97A to 97D, and FIGS. 98 and 99, and further detailed descriptions are omitted.

[0481] Referring to FIGS. 98 and 99, the bidirectional switching device 73b / 74b includes resistor elements 180b for forming resistors R1 and R2. Each resistor element 180b includes a first end 181b that is electrically connected to the first / second power / load pads and serves as the first terminal of resistor R1 / R2, and a second end 182b that is electrically connected to the substrate 102 and serves as the second terminal of resistor R1 / R2.

[0482] The bidirectional switching device 73b / 74b is similar to the bidirectional switching device 73a / 74a. Regarding the differences, each resistor element 180b is disposed on the second nitride-based semiconductor layer 106 and is made of the same material as the gate structure 110. Each first end 181b is electrically coupled to the first / second power / load pads via at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, and at least one conductive trace 146. Each second end 182b is electrically connected to the substrate 102 via at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162.

[0483] The manufacturing method of the bidirectional switching device 73b / 74b is similar to that of the bidirectional switching device 21b and includes the steps shown in FIGS. 6A to 6K. Regarding the differences, in the step shown in FIG. 6C, the gate structure 110 and the resistor element 180b are simultaneously formed by patterning the blanket semiconductor layer 111 and the blanket gate electrode layer 113.

[0484] FIGS. 100 and 101 are structural diagrams showing a bidirectional switching device 73c / 74c according to another embodiment based on the circuit diagrams of FIGS. 94A / 94B. FIG. 100 is a partial layout diagram showing the bidirectional switching device 73c / 74c showing the relationship among some elements constituting the transistor part and the resistor in the bidirectional switching device 73c / 74c. Since the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 100 are the same as the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 96, FIGS. 97A to 97C can be referred to. The cross-sectional view along line D-D' in FIG. 100 is shown in FIG. 101. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 96, 97A to 97D, and FIGS. 100 and 101, and further detailed description is omitted.

[0485] Referring to FIGS. 100 and 101. The bidirectional switching device 73c / 74c includes resistor elements 180c for forming resistors R1 and R2. Each resistor element 180c includes a first end 181c electrically connected to the first / second power / load pads and serving as the first terminal of the resistor R1 / R2, and a second end 182c electrically connected to the substrate 102 and serving as the second terminal of the resistor R1 / R2.

[0486] The bidirectional switching device 73c / 74c is similar to the bidirectional switching device 73a / 74a. Regarding the differences, the resistor element 180c is the first Static layerIt is disposed on 124 and is made of the same material as the S / D electrode 116. The first end 181c is electrically coupled to the first / second power / load pads via at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, and at least one conductive trace 146. The second end 182c is electrically connected to the substrate 102 via at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162.

[0487] The manufacturing method of the bidirectional switching device 73c / 74c is similar to the manufacturing method of the bidirectional switching device 21c, and thus includes the steps shown in FIGS. 6A to 6K. Regarding the differences, in the step shown in FIG. 6E, the blanket conductive layer 115 is patterned to simultaneously form the S / D electrode 116 and the resistor element 180c.

[0488] FIGS. 102 and 103 are structural diagrams showing the bidirectional switching devices 73d / 74d according to other embodiments based on the circuit diagrams of FIGS. 94A / 94B. FIG. 102 is a partial layout diagram showing the bidirectional switching devices 73d / 74d, which shows the relationship among the transistor part and some elements constituting the resistor in the bidirectional switching devices 73d / 74d. Since the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 102 are the same as the cross-sectional views along lines A-A', B-B', and C-C' in FIG. 96 respectively, FIGS. 97A to 97C can be referred to. The cross-sectional view along line D-D' in FIG. 102 is shown in FIG. 103. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 96, 97A to 97D and FIGS. 102, 103, and further detailed description is omitted.

[0489] Refer to FIGS. 102 and 103. The bidirectional switching device 73d / 74d includes a resistor element 180d for forming resistors R1 and R2. Each resistor element 180d includes a first end 181d that is electrically connected to the first / second power / load pads and serves as the first terminal of resistor R1 / R2, and a second end 182d that is electrically connected to the substrate 102 and serves as the second terminal of resistor R1 / R2.

[0490] The bidirectional switching device 73d / 74d is similar to the bidirectional switching device 73a / 74a, and the difference is that the resistor element 180d is Static layer arranged within 126. Static layer 126 is divided into a lower layer 126a below the resistor element 180d and an upper layer 126b above the resistor element 180d. In other words, the resistor element 180d is sandwiched between the first layer 126a and the lower layer 126a and the upper layer 126b. The first end 181d is electrically coupled to the first / second power / load pads via at least one third conductive via 134, at least one first conductive trace 142, at least one conductive via 136, and at least one conductive trace 146. The second end 182d is electrically connected to the substrate 102 via at least one third conductive via 134, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162.

[0491] The manufacturing method of the bidirectional switching device 73d / 74d is similar to the manufacturing method of the bidirectional switching device 21d, and thus includes the steps shown in FIGS. 6A to 6K. The difference is that the lower passive layer 126a is laminated on the passive layer 124, the blanket metal / metal compound layer 143 is laminated on the passive layer 126a and patterned to form the resistor element 180d, the upper passive layer 126b is laminated on the lower passive layer 126a to cover the resistor element 180d, and one or more third conductive vias 134 are formed in the upper passive layer 126b and electrically coupled to the resistor element 180d.

[0492] FIG. 104 and FIG. 105 are structural diagrams showing a bidirectional switching device 73e / 74e according to another embodiment based on the circuit diagrams of FIGS. 94A / 94B. FIG. 104 is a partial layout diagram showing the bidirectional switching device 73e / 74e, which shows the relationship among some elements constituting the transistors and resistors in the bidirectional switching device 73e / 74e. Since the cross-sectional views along lines A-A', B-B', and C-C' of FIG. 104 are the same as the cross-sectional views along lines A-A', B-B', and C-C' of FIG. 96, FIGS. 97A to 97C can be referred to. The cross-sectional view along line D-D' of FIG. 104 is shown in FIG. 105. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 96, 97A to 97D and FIGS. 104, 105, and further detailed descriptions are omitted.

[0493] Referring to FIGS. 104 and 105. The bidirectional switching device 73e / 74e includes a resistor element 180e for forming resistors R1 and R2. Each resistor element 180e has a first end 181e that is electrically connected to the first / second power / load pads and serves as the first terminal of the resistor R1 / R2, and a second end 182e that is electrically connected to the substrate 10 2 and serves as the second terminal of the resistor R1 / R2.

[0494] The bidirectional switching device 73e / 74e is similar to the bidirectional switching device 73a / 74a. Regarding the differences, the resistor element 180e is disposed on the second Static layer 126 and is made of the same material as the conductive trace 142. The first end 181e is electrically coupled to the first / second power / load pads via at least one second conductive via 136 and at least one second conductive trace 146. The second end 182e is Less electrically connected to the substrate 102 via at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162.

[0495] The manufacturing method of the bidirectional switching device 73e / 74e is similar to that of the bidirectional switching device 21e, and thus includes the steps shown in FIGS. 6A to 6K. Regarding the differences, in the step shown in FIG. 6G, the conductive trace 142 and the resistor element 180e are simultaneously formed by patterning the blanket conductive layer 141.

[0496] FIGS. 106 and 107 are structural diagrams showing a bidirectional switching device 73f / 74f according to another embodiment based on the circuit diagrams of FIGS. 94A / 94B. FIG. 106 is a partial layout diagram showing the bidirectional switching device 73f / 74f, which shows the relationship among some elements constituting the transistor part and the resistor in the bidirectional switching device 73f / 74f. Since the cross-sectional views along lines A-A', B-B', and C-C' of FIG. 106 are the same as the cross-sectional views along lines A-A', B-B', and C-C' of FIG. 96 respectively, FIGS. 97A to 97C can be referred to. The cross-sectional view along line D-D' of FIG. 106 is shown in FIG. 107. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 96, 97A to 97D and FIGS. 106, 107, and further detailed description is omitted.

[0497] Referring to FIGS. 106 and 107. The bidirectional switching device 73f / 74f includes a resistor element 180e for forming resistors R1 and R2. Each resistor element 180e includes a first end 181e electrically connected to the first / second power / load pads and serving as the first terminal of the resistor R1 / R2, and 2 a second end 182e electrically connected to the substrate 10 and serving as the second terminal of the resistor R1 / R2.

[0498] The bidirectional switching device 73f / 74f is similar to the bidirectional switching device 73a / 74a. Regarding the differences, the resistor element 180f is arranged on the third Static layer 128 and is made of the same material as the conductive trace 146. The first end 181f is electrically coupled to the first / second power / load pads. The second end 182f is electrically connected to the substrate 102 via at least one TGV162.

[0499] The manufacturing method of the bidirectional switching device 73f / 74f is similar to that of the bidirectional switching device 21f, and includes the steps shown in FIGS. 6A to 6K. Regarding the difference, in the step shown in FIG. 6J, the conductive trace 146 and the resistance element 180f are simultaneously formed by patterning the blanket conductive layer 145.

[0500] FIG. 108 is a circuit block diagram showing a bidirectional switching device 8 having substrate potential management ability according to some embodiments of the present invention.

[0501] As shown in FIG. 108, the bidirectional switching device 8 has a control node CTRL, a first power / load node P / L1 and a second power / load node P / 2, and a main substrate.

[0502] The bidirectional switching device 8 includes a nitride-based bidirectional transistor Qm and a substrate potential management circuit arranged to manage the potential of the main substrate of the bidirectional switching device 8.

[0503] The bidirectional transistor Qm has a main gate terminal Gm electrically connected to the control node, a first source / drain terminal S / D1 electrically connected to the first power / load node, a second source / drain terminal S / D2 electrically connected to the second power / load node, and a main substrate terminal SUB electrically connected to the main substrate.

[0504] The substrate potential management circuit includes a first potential stabilizing element F1, and the first potential stabilizing element F1 has a first conductive terminal electrically connected to the first power / load node and a second conductive terminal electrically connected to the main substrate.

[0505] The substrate potential management circuit further includes a second potential stabilizing element F2, and the second potential stabilizing element F2 has a first conductive terminal connected to the main substrate and a second conductive terminal connected to the control node.

[0506] When a high-level voltage is applied to the control node, the first potential stabilizing element F1 has a first resistance lower than the second resistance of the second potential stabilizing element F2, and the potential of the main substrate becomes basically equal to the lower one of the potentials of the first power / load node and the second power / load node.

[0507] When a low-level voltage is applied to the control node, the first resistance becomes higher than the second resistance, and the potential of the main substrate becomes basically equal to the low-level voltage.

[0508] FIG. 109A is a circuit diagram showing a bidirectional switching device 81 according to some embodiments based on the circuit block diagram of FIG. 108.

[0509] Referring to FIG. 109A. The first potential stabilizing element F1 includes a diode D1, and the diode D1 has a negative terminal electrically connected to the first power / load node and a positive terminal S1 electrically connected to the main substrate.

[0510] Referring to FIG. 109B. The diode D1 is replaced by a rectifying transistor Q3 to form a bidirectional switching device 82. The rectifying transistor Q3 has a gate terminal G3 and a source terminal S3 both connected to the main substrate, and a drain terminal D3 connected to the first power / load node.

[0511] The rectifying transistor Q3 is composed of each type of transistor, including, but not limited to, GaN HEMT, Si MOSFET, insulated gate bipolar transistor (IGBT), junction gate field effect transistor (JFET), and static induction transistor (SIT).

[0512] Referring to FIGS. 109A and 109B. The second potential stabilizing element F2 may be a non-rectifying element, for example, a resistor R1, and has a first terminal connected to the main substrate and a second terminal connected to the control node.

[0513] Figures 110A and 110B are operation mechanism diagrams showing the bidirectional switching device 81 in the first operation mode (biased under a voltage V L higher than voltage V H ).

[0514] Referring to Figure 110A. When a high-level voltage V ON is applied to the control node to turn on the bidirectional transistor Qm, current reaches from the control node to the second power / load node and flows through the resistor R1 and the diode D1. Subsequently, the potential Vsub of the substrate is calculated by the following formula: Vsub = V L +Vm,on+(V ON -V L - Vm,on)*R FW / (R FW +R). Here, R is the resistance of the resistor R1, R FW is the forward resistance of the diode D1, and Vm,on is the drain-source voltage when the bidirectional transistor Qm is turned on. Since R FW is much smaller than R and Vm,on is extremely small, Vsub is basically equal to the voltage V L applied to the second power / load node.

[0515] Referring to Figure 110B. When a low-level voltage V OFF is applied to the control node to turn off the bidirectional transistor Qm, current reaches from the first power / load node to the control node and flows through the diode D1 and the resistor R1. The potential Vsub of the substrate is calculated by the following formula: Vsub = V OFF +(V H - V OFF )*R / (R+R RV ). Here, R RV is the reverse resistance of the diode D1. Since R RV is much larger than R, the potential Vsub of the substrate is basically equal to the low-level voltage V OFF applied to the control node.

[0516] Figures 110C and 110D are operation mechanism diagrams showing the bidirectional switching device 81 in the second operation mode (biased at a voltage V L higher than voltage V H ).

[0517] Refer to Figure 110C. When a high-level voltage V ON is applied to the control node to turn on the bidirectional transistor Qm, a current reaches from the control node to the first power / load node and flows through the resistor R1 and the diode D1, and the potential Vsub of the substrate is calculated by the following formula: Vsub = V L +(V ON -V L )*R FW / (R FW +R). Since R FW is much smaller than R, the potential Vsub of the substrate is basically equal to the voltage V L applied to the first power / load node.

[0518] Refer to Figure 110D. When a low-level voltage V OFF is applied to the control node to turn off the bidirectional transistor Qm, a current reaches from the second power / load node to the control node and flows through the diode D1 and the resistor R1, and the potential Vsub of the substrate is calculated by the following formula: Vsub = V OFF +(V H -Vm,off -V OFF )*R / (R RV +R). Here, Vm,off is the drain-source voltage when the bidirectional transistor Qm is turned off. Since R RV is much larger than R, the potential Vsub of the substrate is basically equal to the low-level voltage V OFF applied to the control node.

[0519] The bidirectional switching device 81 / 82 is formed by integrating the nitride-based bidirectional transistor Qm, the diode D1 / rectifying transistor Q3, and the resistor R1 in the IC chip.

[0520] FIG. 111 and FIGS. 112A to 112E are structural diagrams showing the bidirectional switching devices 81a / 82a based on the circuit diagrams of FIG. 109A / FIG. 109 B. FIG. 111 is a partial layout diagram showing the bidirectional switching device 81a / 82a, which shows the relationship among the transistor part and some elements constituting resistors in the bidirectional switching device 81a / 82a. FIGS. 112A to 112E are cross-sectional views along lines A-A', B-B', C-C', D-D', and E-E' of FIG. 111, respectively. The bidirectional switching device 81a / 82a has a layered structure similar to the layered structure of the bidirectional switching device 61a. For ease of understanding, the same elements are labeled with the same reference symbols and signs, and further detailed descriptions are omitted.

[0521] Referring to FIGS. 111 and FIGS. 112A to 112E. The bidirectional switching device 81a / 82a includes a substrate 102, a first nitride-based semiconductor layer 104, a second nitride-based semiconductor layer 106, a gate structure 110, S / D electrodes 116, a first passivation layer 124, a passivation layer 126, a third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more second conductive traces 146, a protection layer 154, one or more gallium through vias (TGVs) 162, and one or more conductive pads 170. The conductive pads 170 are arranged to be electrically connected to external elements (e.g., external circuits).

[0522] The conductive traces 142 or 146, the conductive vias 132 or 136, and the TGVs 162 are electrically connected to different layers / elements and arranged to form a nitride-based bidirectional transistor Qm, a diode D1, and a resistor R1.

[0523] The conductive pads 170 include a control pad CTRL arranged as a control node, a first power / load pad P / L1 arranged as a first power / load node, and a second power / load pad P / L2 arranged as a second power / load node.

[0524] Refer to FIG. 112A. The S / D electrode 116 includes at least one first S / D electrode 116a, and the first S / D electrode 116a is electrically connected to the first power / load pad and is the first source / drain terminal of the nitride-based bidirectional transistor Qm and the drain terminal of the rectifier transistor Q3 ( or the negative terminal of the diode D1). The first S / D electrode 116a is connected to the first power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0525] Refer to FIG. 112B. The S / D electrode 116 includes at least one second S / D electrode 116b, and the second S / D electrode 116b is electrically connected to the second power / load pad and is arranged as the second source / drain terminal of the nitride-based bidirectional transistor Qm. The second S / D electrode 116b is connected to the second power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0526] Refer to FIG. 112C. The gate structure 110 includes at least one first gate structure 110a, and the first gate structure 110a is electrically connected to the control pad and is arranged as the main gate terminal of the nitride-based bidirectional transistor Qm. The first gate structure 110a is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0527] Refer to FIG. 112D. The gate structure 110 further includes at least one second gate structure 110b, and the second gate structure 110b is electrically connected to the substrate 102 and is arranged as the gate terminal of the rectifying transistor Q3. The S / D electrode 116 includes at least one third S / D electrode 116c, and the third S / D electrode 116c is electrically connected to the substrate 102 and is arranged as the source terminal of the rectifying transistor Q3. In other words, the positive terminal of the diode D1 is formed by the electrical short circuit of the second gate structure 110b and the third S / D electrode 116c.

[0528] The second gate structure 110b is connected to the substrate 102 via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

[0529] The third S / D electrode 116c is electrically connected to the substrate via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

[0530] Preferably, the second S / D electrode 116b is adjacent to the first S / D electrode 116a, and the first gate structure 110a is interposed between the first S / D electrode 116a and the second S / D electrode 116b.

[0531] Preferably, the third S / D electrode 116c is adjacent to the first S / D electrode 116a, and the second gate structure 110b is interposed between the first S / D electrode 116a and the third S / D electrode 116c.

[0532] Refer to FIGS. 111 and 112E. The bidirectional switching device 81a / 82a further includes a resistance element 180a. The resistance element 180a includes a first end 181a that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182a that is electrically connected to the control pad and serves as the second terminal of the resistor R1.

[0533] The resistive element 180a is disposed at the same layer location of the 2DEG region adjacent to the hetero-junction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106. The first end 181a is electrically coupled to the substrate 102 via at least one ohmic contact element 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182a is electrically connected to the control pad via at least one ohmic contact element 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0534] Since the manufacturing method of the bidirectional switching device 81a / 82a is similar to the manufacturing method of the bidirectional switching device 61a, it includes the steps shown in FIGS. 6A to 6K. Regarding the difference, during the steps shown in FIGS. 6A and 6B, the resistive element 180a is formed by patterning the 2DEG region adjacent to the hetero-junction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106 by ion implantation.

[0535] FIGS. 113 and 114 are FIG. 109A / FIG 109FIG. 113 is a structural diagram showing a bidirectional switching device 81b / 82b according to another embodiment based on the circuit diagram of B. FIG. 113 is a partial layout diagram showing the relationship among some elements constituting the transistor portion and resistors in the bidirectional switching device 81b / 82b. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 113 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 111, FIGS. 112A to 112D can be referred to. The cross-sectional view along line E-E' in FIG. 113 is shown in FIG. 114. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 111, 112A to 112E, and FIGS. 113 and 114, and further detailed description is omitted.

[0536] Referring to FIGS. 113 and 114, the bidirectional switching device 81b / 82b includes a resistive element 180b. The resistive element 180b includes a first end 181b electrically connected to the substrate 102 and serving as a first terminal of the resistor R1, and a second end 182b electrically connected to the control pad and serving as a second terminal of the resistor R1.

[0537] The bidirectional switching device 81b / 82b is similar to the bidirectional switching device 81a / 82a. Regarding the difference, the resistive element 180b is disposed on the second nitride-based semiconductor layer 106 and is made of the same material as the gate structure 110. The first end 181b is electrically coupled to the substrate 102 via at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 161. The second end 182b is electrically connected to the control pad via at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0538] The manufacturing method of the bidirectional switching device 81b / 82b is similar to that of the bidirectional switching device 61b, and includes the steps shown in FIGS. 6A to 6K. Regarding the difference, in the step shown in FIG. 6C, the gate structure 110 and the resistor element 180b are simultaneously formed by patterning the blanket semiconductor layer 111 and the blanket gate electrode layer 113.

[0539] FIGS. 115 and 116 are structural diagrams showing a bidirectional switching device 81c / 82c according to another embodiment based on the circuit diagrams of FIGS. 109A / FIG. 109 B. FIG. 115 is a partial layout diagram showing the bidirectional switching device 81c / 82c, which shows the relationship among some elements constituting the transistor portion and the resistor in the bidirectional switching device 81c / 82c. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 115 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 111, FIGS. 112A to 112D can be referred to. The cross-sectional view along line E-E' in FIG. 115 is shown in FIG. 116. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 111, 112A to 112E, and FIGS. 115 and 116, and further detailed description is omitted.

[0540] Referring to FIGS. 115 and 116. The bidirectional switching device 81c / 82c includes a resistor element 180c. The resistor element 180c includes a first end 181c that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182c that is electrically connected to the control pad and serves as the second terminal of the resistor R1.

[0541] The bidirectional switching device 81c / 82c is similar to the bidirectional switching device 81a / 82a. Regarding the difference, the resistor element 180c is the first Static layerIt is disposed on 124 and is made of the same material as the S / D electrode 116. The first end 181c is electrically coupled to the substrate 102 via at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182c is electrically connected to the control pad via at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0542] The manufacturing method of the bidirectional switching device 81c / 82c is similar to the manufacturing method of the bidirectional switching device 61c, and thus includes the steps shown in FIGS. 6A to 6K. Regarding the differences, in the step shown in FIG. 6E, the blanket conductive layer 115 is patterned to simultaneously form the S / D electrode 116 and the resistor element 180c.

[0543] FIGS. 117 and 118 are structural diagrams showing a bidirectional switching device 81d / 82d according to another embodiment based on the circuit diagrams of FIGS. 109A / FIG. 109 B. FIG. 117 is a partial layout diagram showing the bidirectional switching device 81d / 82d, which shows the relationship among some elements constituting the transistor and the resistor in the bidirectional switching device 81d / 82d. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 117 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 111, FIGS. 112A to 112D can be referred to. The cross-sectional view along line E-E' in FIG. 117 is shown in FIG. 118. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 111, 112A to 112E, and FIGS. 117 and 118, and further detailed descriptions are omitted.

[0544] Refer to FIGS. 117 and 118. The bidirectional switching device 81d / 82d includes a resistive element 180d. The resistive element 180d includes a first end 181d that is electrically connected to the substrate 102 and serves as the first terminal of the resistor R1, and a second end 182d that is electrically connected to the control pad and serves as the second terminal of the resistor R1.

[0545] The bidirectional switching device 81d / 82d is similar to the bidirectional switching device 81a / 82a. Regarding the differences, the resistive element 180d Static layer is disposed within 126. Static layer 126 is divided into a lower layer 126a below the resistive element 180d and an upper layer 126b above the resistive element 180d. In other words, the resistive element 180d is sandwiched between the first layer 126a and the lower layer 126a and the upper layer 126b. The first end 181d is electrically coupled to the substrate 102 via at least one third conductive via 134, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182e is electrically connected to the control pad via at least one third conductive via 134, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

[0546] The manufacturing method of the bidirectional switching device 81d / 82d is similar to the manufacturing method of the bidirectional switching device 61d, and thus includes the steps shown in FIGS. 6A to 6K. Regarding the differences, the lower passive layer 126a is laminated on the passive layer 124, the blanket metal / metal compound layer 143 is laminated on the passive layer 126a and patterned to form the resistive element 180d, the upper passive layer 126b is laminated on the lower passive layer 126a to cover the resistive element 180d, and one or more third conductive vias 134 are formed in the upper passive layer 126b and electrically coupled to the resistive element 180d.

[0547] FIGS. 119 and 120 are FIGS. 109A / FIG 109FIG. 119 is a structural diagram showing a bidirectional switching device 81e / 82e according to another embodiment based on the circuit diagram of B. FIG. 119 is a partial layout diagram showing a bidirectional switching device 81e / 82e showing the relationship among some elements constituting a transistor portion and resistors in the bidirectional switching device 81e / 82e. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 119 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 111, FIGS. 112A to 112D can be referred to. The cross-sectional view along line E-E' in FIG. 119 is shown in FIG. 120. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 111, 112A to 112E, and FIGS. 119 and 120, and further detailed description will be omitted.

[0548] Referring to FIGS. 119 and 120. The bidirectional switching device 81e / 82e includes a resistance element 180e. The resistance element 180e includes a first end 181e electrically connected to the substrate 102 and serving as a first terminal of the resistor R1, and a second end 182e electrically connected to the control pad and serving as a second terminal of the resistor R1.

[0549] The bidirectional switching device 81e / 82e is similar to the bidirectional switching device 81a / 82a, and in terms of the difference, the resistance element 180e is arranged on the second Static layer 126 and is made of the same material as the conductive trace 142. The first end 181e is Less electrically coupled to the substrate 102 through at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162. The second end 182e is electrically connected to the control pad through at least one second conductive via 136 and at least one second conductive trace 146.

[0550] The manufacturing method of the bidirectional switching device 81e / 82e is similar to that of the bidirectional switching device 61e, and thus includes the steps shown in FIGS. 6A to 6K. Regarding the differences, in the step shown in FIG. 6G, the conductive trace 142 and the resistor element 180e are simultaneously formed by patterning the blanket conductive layer 141.

[0551] FIGS. 121 and 122 are structural diagrams showing a bidirectional switching device 81f / 82f according to another embodiment based on the circuit diagrams of FIGS. 109A / FIG. 109 B. FIG. 121 is a partial layout diagram showing the bidirectional switching device 81f / 82f, which shows the relationship among some elements constituting the transistor and the resistor in the bidirectional switching device 81f / 82f. Since the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 121 are the same as the cross-sectional views along lines A-A', B-B', C-C', and D-D' in FIG. 111, FIGS. 112A to 112D can be referred to. The cross-sectional view along line E-E' in FIG. 121 is shown in FIG. 122. For ease of understanding, the same reference numerals and symbols are assigned to the same structural elements in FIGS. 111, 112A to 112E, and FIGS. 121 and 122, and further detailed description is omitted.

[0552] Referring to FIGS. 121 and 122. The bidirectional switching device 81f / 82f includes a resistor element 180e. The resistor element 180e includes a first end 181e electrically connected to the substrate 102 and serving as the first terminal of the resistor R1, and a second end 182e electrically connected to the control pad and serving as the second terminal of the resistor R1.

[0553] The bidirectional switching device 81f / 82f is similar to the bidirectional switching device 81a / 82a. Regarding the differences, the resistor element 180f is arranged on the third Static layer 128 and is made of the same material as the conductive trace 146. The first end 181f is electrically coupled to the substrate 102 via at least one TGV 162. The second end 182f is electrically connected to the control pad.

[0554] The manufacturing method of the bidirectional switching device 81f / 82f is similar to that of the bidirectional switching device 61f, and includes the steps shown in FIGS. 6A to 6K. Regarding the difference, in the step shown in FIG. 6J, the conductive trace 146 and the resistance element 180f are simultaneously formed by patterning the blanket conductive layer 145.

[0555] FIG. 123A is a circuit diagram showing a bidirectional switching device 83 according to some embodiments based on the circuit block diagram of FIG. 108.

[0556] Referring to FIG. 123A. The first potential stabilizing element F1 includes a non-rectifying element, for example, a resistor R1 having a first terminal electrically connected to the first power / load node and a second terminal electrically connected to the main substrate.

[0557] The second potential stabilizing element F2 may be a rectifying element, for example, a diode D1, and has a positive terminal connected to the main substrate and a negative terminal connected to the control node.

[0558] Referring to FIG. 123B. The diode D1 is replaced by a rectifying transistor Q3 to form a bidirectional switching device 84. The rectifying transistor Q3 has a gate terminal G3 and a source terminal S3 both connected to the main substrate, and a drain terminal D3 connected to the control node.

[0559] The rectifying transistor Q3 is composed of each type of transistor, including, but not limited to, GaN HEMT, Si MOSFET, insulated gate bipolar transistor (IGBT), junction gate field effect transistor (JFET), and static induction transistor (SIT).

[0560] FIGS. 124A to 124B show the first operation mode (the voltage V applied by the first power / load node to the second power / load node L is higher than the voltage V HIt is an operation mechanism diagram showing a bi-directional switching device 83 in the case of being biased downward).

[0561] Refer to Fig. 124A. When a high-level voltage V ON is applied to the control node to turn on the bi-directional transistor Qm, the diode D1 is reverse-biased when the current reaches the diode D1 from the control node to the second power / load node. Subsequently, the potential Vsub of the substrate is calculated by the following formula: Vsub = V L + Vm,on + (V ON - V L - Vm,on)*R / (R + R RV ). Here, R RV is the reverse resistance of the diode D1, Vm,on is the drain-source voltage when the bi-directional transistor Qm is turned on, and R is the resistance of the resistor R1. Since Vm,on is extremely small and R is smaller than R RV , the potential Vsub of the substrate is basically equal to the voltage V L applied to the second power / load node.

[0562] Refer to Fig. 124B. When a low-level voltage V OFF is applied to the control node to turn off the bi-directional transistor Qm, the diode D1 is forward-biased when the current reaches the diode D1 from the first power / load node to the control node. The potential Vsub of the substrate is calculated by the following formula: Vsub = V OFF +(V H - V OFF )*R FW / (R FW + R). Since R is much larger than R FW , the potential Vsub of the substrate is basically equal to the low-level voltage V OFF applied to the control node.

[0563] Figs. 124C and 124D are operation mechanism diagrams showing a bi-directional switching device 83 in the second operation mode (the second power / load node is biased under a voltage V L higher than the voltage V H applied to the first power / load node).

[0564] Refer to FIG. 124C. When a high-level voltage V ON is applied to the control node to turn on the bidirectional transistor Qm, the diode D1 is biased in the reverse direction when the current reaches the diode D1 from the control node to the first power / load node and flows through the diode D1. Subsequently, the potential Vsub of the substrate is calculated by the following formula: Vsub = V L + (V ON -V L )*R / (R + R RV ). Since R is much smaller than R RV , the potential Vsub of the substrate is basically equal to the voltage V L applied to the first power / load node.

[0565] Refer to FIG. 124D. When a low-level voltage V OFF is applied to the control node to turn off the bidirectional transistor Qm, the diode D1 is biased in the forward direction when the current reaches the diode D1 from the second power / load node to the control node and flows through the diode D1. The potential Vsub of the substrate is calculated by the following formula: Vsub = V OFF +(V H -Vm,off - V OFF )*R FW / (R FW +R). Since R is much larger than R FW , the potential Vsub of the substrate is basically equal to the low-level voltage V OFF applied to the control node.

[0566] The bidirectional switching device 83 / 84 is formed by integrating a nitride-based bidirectional transistor Qm, a resistor R1, and a diode D1 / rectifier transistor Q3 in an IC chip.

[0567] FIG. 125 and FIGS. 126A to 126D are structural diagrams showing the bidirectional switching devices 83a / 84a based on the circuit diagrams of FIGS. 123A / 123B. FIG. 125 is a partial layout diagram showing the bidirectional switching device 83a / 84a which shows the relationship among the transistor part and some elements constituting resistors in the bidirectional switching device 83a / 84a. FIGS. 126A to 126D are cross-sectional views taken along lines A-A', B-B', C-C', and D-D' of FIG. 125, respectively. The bidirectional switching device 83a / 84a has a layered structure similar to the layered structure of the bidirectional switching device 21a. For ease of understanding, the same structural elements are labeled with the same reference symbols and signs, and further detailed description is omitted.

[0568] Referring to FIGS. 125 and FIGS. 126A to 126D, the bidirectional switching device 83a / 84a includes a substrate 102, a first nitride-based semiconductor layer 104, a second nitride-based semiconductor layer 106, a gate structure 110, S / D electrodes 116, a first passivation layer 124, a passivation layer 126, a third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more second conductive traces 146, a protective layer 154, one or more gallium through vias (TGVs) 162, and a conductive pad 170.

[0569] The conductive pad 170 includes a control pad CTRL arranged as a control node, a first power / load pad P / L1 arranged as a first power / load node, and a second power / load pad P / L2 arranged as a second power / load node.

[0570] The conductive traces 142 or 146, the conductive vias 132 or 136, and the TGVs 162 are electrically connected to different layers / elements and arranged to form a nitride-based bidirectional transistor Qm, a resistor R1, and a diode D1 / rectifying transistor Q3.

[0571] Refer to FIG. 126A. The S / D electrode 116 includes at least one first S / D electrode 116a, and the first S / D electrode 116a is electrically connected to the first power / load pad and is arranged as the first source / drain terminal of the nitride-based bidirectional transistor Qm. The first S / D electrode 116a is connected to the first power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0572] Refer to FIG. 126B. The gate structure 110 includes at least one first gate structure 110a, and the first gate structure 110a is electrically connected to the control pad and is arranged as the main gate terminal of the nitride-based bidirectional transistor Qm. The first gate structure 110a is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0573] The S / D electrode 116 includes at least one fourth S / D electrode 116d, and the fourth S / D electrode 116d is electrically connected to the control pad and is arranged as the drain terminal of the rectifier transistor Q3 (or the negative terminal of the diode D1). The fourth S / D electrode 116d is connected to the control pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0574] Refer to FIG. 126C. The S / D electrode 116 includes at least one second S / D electrode 116b, and the second S / D electrode 116b is electrically connected to the second power / load pad and is arranged as the second source / drain terminal of the nitride-based bidirectional transistor Qm. The second S / D electrode 116b is connected to the second power / load pad via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

[0575] The gate structure 110 further includes at least one second gate structure 110b, and the second gate structure 110b is electrically connected to the substrate 102 and is arranged as the gate terminal of the rectifying transistor Q3. The S / D electrode 116 includes at least one third S / D electrode 116c, and the third S / D electrode 116c is electrically connected to the substrate 102 and is arranged as the source terminal of the rectifying transistor Q3. In other words, the positive terminal of the diode D1 is formed by the electrical short circuit of the second gate structure 110b and the third S / D electrode 116c.

[0576] The second gate structure 110b is connected to the substrate 102 via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

[0577] The third S / D electrode 116c is electrically connected to the substrate 102 via at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

[0578] Preferably, the second S / D electrode 116b is adjacent to the first S / D electrode 116a, and the first gate structure 110a is interposed between the first S / D electrode 116a and the second S / D electrode 116b.

[0579] Preferably, the third S / D electrode 116c is adjacent to the fourth S / D electrode 116d, and the second gate structure 110b is interposed between the fourth S / D electrode 116d and the third S / D electrode 116c.

[0580] Refer to FIGS. 125 and 126D. The bidirectional switching device 83a / 84a further includes a resistance element 180a. The resistance element 180a includes a first end 181a that is electrically connected to the first power / load pad and serves as the first terminal of the resistor R1, and a second end 182a that is electrically connected to the substrate 102 and serves as the second terminal of the resistor R1.

[0581] The resistance element 180a is disposed at the same layer location of the 2DEG region adjacent to the hetero-junction interface between the first nitride semiconductor layer 104 and the second nitride semiconductor layer 106. Each first end 181a is electrically coupled to the first power / load pad via at least one ohmic contact element 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, and at least one conductive trace 146. The second end 182a is electrically connected to the substrate 102 via at least one ohmic contact element 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162.

[0582] Since the manufacturing method of the bidirectional switching device 83a / 84a is similar to that of the bidirectional switching device 21a, it includes the steps shown in FIGS. 6A to 6K. Regarding the differences, during the steps shown in FIGS. 6A and 6B, the 2DEG region adjacent to the hetero-junction interface between the first nitride semiconductor layer 104 and the second nitride semiconductor layer 106 is patterned by ion implantation to form the resistance element 180a.

[0583] FIG. 127 and FIG. 128 are structural diagrams showing a bidirectional switching device 83b / 84b according to another embodiment based on the circuit diagrams of FIGS. 123A / 123B. FIG. 127 is a partial layout diagram showing the bidirectional switching device 83b / 84b showing the relationship among some elements constituting the transistor and resistors in the bidirectional switching device 83b / 84b. Since the cross-sectional views along lines A-A', B-B', and C-C' of FIG. 127 are the same as the cross-sectional views along lines A-A', B-B', and C-C' of FIG. 125, FIGS. 126A to 126C can be referred to. The cross-sectional view along line D-D' of FIG. 127 is shown in FIG. 128. For ease of understanding, the same reference numerals and symbols are given to the same structural elements in FIGS. 125, 126A to 126D, and FIGS. 127 and 128, and further detailed description is omitted.

[0584] Refer to FIGS. 127 and 128. The bidirectional switching device 83b / 84b includes a resistive element 180b. The resistive element 180b includes a first end 181b that is electrically connected to the first power / load pad and serves as the first terminal of the resistor R1, and a second end 182b that is electrically connected to the substrate 102 and serves as the second terminal of the resistor R1.

[0585] The bidirectional switching device 83b / 84b is similar to the bidirectional switching device 83a / 84a, and the difference is that the resistive element 180b is disposed on the second nitride-based semiconductor layer 106 and is made of the same material as the gate structure 110. The first end 181b is electrically coupled to the first power / load pad via at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, and at least one con...

Claims

1. A nitride-based bidirectional switching device having substrate potential management capabilities, comprising a control node, a first power / load node, a second power / load node, a reference node, and a main substrate, and a nitride-based bidirectional transistor having a main gate terminal connected to the control node, a first source / drain terminal connected to the first power / load node, a second source / drain terminal connected to the second power / load node, and a main substrate terminal connected to the main substrate, and a substrate potential management circuit arranged to manage the potential of the main substrate, wherein the substrate potential management circuit comprises a first potential stabilizing element having a control terminal electrically connected to the control node, a first conduction terminal electrically connected to the first power / load node, a second conduction terminal electrically connected to the main substrate, and a substrate terminal electrically connected to the main substrate, and a second potential stabilizing element having a control terminal electrically connected to the control node, a first conduction terminal electrically connected to the second power / load node, a second conduction terminal electrically connected to the main substrate, and a substrate terminal electrically connected to the main substrate, wherein the main substrate is electrically connected to a third potential stabilizing element via the reference node, and when a high-level voltage is applied to the control node, the first potential stabilizing element has a first resistance lower than a third resistance of the third potential stabilizing element, and the second potential stabilizing element has a second resistance lower than the third resistance, and the potential of the main substrate is basically equal to the lower of the potentials of the first power / load node and the second power / load node. A nitride-based bidirectional switching device having substrate potential management capabilities, characterized in that.

2. The first potential stabilizing element is a first substrate coupling transistor, and the first substrate coupling transistor has a gate terminal connected to the control node, a drain terminal connected to the first power / load node, and a source terminal connected to the main substrate. The second potential stabilizing element is a second substrate coupling transistor, and the second substrate coupling transistor has a gate terminal connected to the control node, a drain terminal connected to the second power / load node, and a source terminal connected to the main substrate, and The third potential stabilizing element is a resistor, and the resistor has a first terminal connected to the main substrate via the reference node and a second terminal connected to ground. The nitride-based bidirectional switching device having the substrate potential management ability according to claim 1, characterized in that. **Claim 3** The nitride-based bidirectional transistor, the first substrate coupling transistor, and the second substrate coupling transistor are integrated in an integrated circuit (IC) chip, and the integrated circuit chip includes a substrate, a first nitride-based semiconductor layer disposed above the substrate, a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer and having a bandgap larger than that of the first nitride-based semiconductor layer, one or more gate structures disposed above the second nitride-based semiconductor layer and each including a gate semiconductor layer and a gate electrode layer disposed on the gate semiconductor layer, a first passivation layer disposed on the second nitride-based semiconductor layer and covering the gate metal layer, one or more source / drain (S / D) electrodes disposed on the second nitride-based semiconductor layer and penetrating the first passivation layer, a second passivation layer disposed on the first passivation layer and covering the S / D electrodes, one or more first conductive vias disposed in the second passivation layer, a first conductive layer disposed on the second passivation layer and patterned to form one or more first conductive traces, a third passivation layer disposed on the first conductive layer and covering the one or more conductive traces, one or more second conductive vias disposed in the third passivation layer, at least one gallium through via (TGV) extending longitudinally from the second conductive layer and penetrating into the substrate, the second conductive layer disposed on the third passivation layer and patterned to form one or more second conductive traces. It is disposed above the second conductive layer and has one or more openings that expose one or more conductive pads. The one or more conductive pads include a control pad disposed as the control node, a first power / load pad disposed as the first power / load node, a second power / load pad disposed as the second power / load node, and a reference pad disposed as the reference node, and a protective layer, and The one or more S / D electrodes At least one first S / D electrode electrically connected to the first power / load pad and serving as the first source / drain terminal of the nitride-based bidirectional transistor and the drain terminal of the first substrate coupling transistor, At least one second S / D electrode electrically connected to the second power / load pad and serving as the second source / drain terminal of the nitride-based bidirectional transistor and the drain terminal of the second substrate coupling transistor, At least one third S / D electrode electrically connected to the substrate and the reference pad and serving as the source terminal of the first substrate coupling transistor, At least one fourth S / D electrode electrically connected to the substrate and the reference pad and serving as the source terminal of the second substrate coupling transistor, and The one or more gate structures At least one first gate structure electrically connected to the control pad and serving as the main gate terminal of the nitride-based bidirectional transistor, At least one second gate structure electrically connected to the control pad and serving as the gate terminal of the first substrate coupling transistor, At least one third gate structure electrically connected to the control pad and serving as the gate terminal of the second substrate coupling transistor. The nitride-based bidirectional switching device having the substrate potential management ability according to claim 2, characterized in that it is provided.

4. The second S / D electrode is adjacent to the first S / D electrode so as to be positioned, The first gate structure is positioned between the first S / D electrode and the second S / D electrode, The third S / D electrode is adjacent to the first S / D electrode so as to be positioned, The second gate structure is positioned between the first S / D electrode and the third S / D electrode, The fourth S / D electrode is adjacent to be positioned to the second S / D electrode, and The nitride-based bidirectional switching device having substrate potential management ability according to claim 3, wherein the third gate structure is positioned between the second S / D electrode and the fourth S / D electrode.

5. A nitride-based bidirectional switching device having substrate potential management ability, comprising a control node, a first power / load node, a second power / load node, a reference node, and a main substrate, and A nitride-based bidirectional transistor having a main gate terminal connected to the control node, a first source / drain terminal connected to the first power / load node, a second source / drain terminal connected to the second power / load node, and a main substrate terminal connected to the main substrate, A substrate potential management circuit arranged to manage the potential of the main substrate, The substrate potential management circuit, A first potential stabilizing element having a control terminal electrically connected to the control node, a first conduction terminal electrically connected to the first power / load node, a second conduction terminal electrically connected to the main substrate, and a substrate terminal electrically connected to the main substrate, Including a second potential stabilizing element having a control terminal electrically connected to the control node, a first conduction terminal electrically connected to the second power / load node, a second conduction terminal electrically connected to the main substrate, and a substrate terminal electrically connected to the main substrate, The substrate potential management circuit further includes a third potential stabilizing element, the third potential stabilizing element having a first conduction terminal connected to the main substrate and a second conduction terminal connected to the reference node, and When a high-level voltage is applied to the control node, the first potential stabilizing element has a first resistance lower than the third resistance of the third potential stabilizing element, and the second potential stabilizing element has a second resistance lower than the third resistance, and the potential of the main substrate is basically equal to the lower one of the potentials of the first power / load node and the second power / load node. A nitride-based bidirectional switching device having substrate potential management ability.

6. The first potential stabilizing element is a first substrate coupling transistor, and the first substrate coupling transistor has a gate terminal connected to the control node, a drain terminal connected to the first power / load node, and a source terminal connected to the main substrate. The second potential stabilizing element is a second substrate coupling transistor, and the second substrate coupling transistor has a gate terminal connected to the control node, a drain terminal connected to the second power / load node, and a source terminal connected to the main substrate, and The third potential stabilizing element is a resistor, and the resistor has a first terminal connected to the main substrate and a second terminal connected to ground via a reference node. The nitride-based bidirectional switching device having substrate potential management ability according to claim 5, characterized in that.

7. The nitride-based bidirectional transistor, the first substrate coupling transistor, the second substrate coupling transistor, and the resistor are integrated in an integrated circuit (IC) chip, and the integrated circuit chip includes a substrate, a first nitride-based semiconductor layer disposed above the substrate, a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer and having a bandgap larger than that of the first nitride-based semiconductor layer, one or more gate structures disposed above the second nitride-based semiconductor layer and each including a gate semiconductor layer and a gate electrode layer disposed on the gate semiconductor layer, a first passivation layer disposed on the second nitride-based semiconductor layer and covering the gate metal layer, one or more source / drain (S / D) electrodes disposed on the second nitride-based semiconductor layer and penetrating the first passivation layer, a second passivation layer disposed on the first passivation layer and covering the S / D electrodes, one or more first conductive vias disposed in the second passivation layer, a first conductive layer disposed on the second passivation layer and patterned to form one or more first conductive traces, a third passivation layer disposed on the first conductive layer and covering the one or more conductive traces, one or more second conductive vias disposed in the third passivation layer, At least one gallium through-via (TGV) that extends vertically from the second conductive layer and penetrates into the substrate, The second conductive layer that is disposed on the third passivation layer and is patterned to form one or more second conductive traces, One or more openings that are disposed above the second conductive layer and expose one or more conductive pads, where the one or more conductive pads include a control pad disposed as the control node, a first power / load pad disposed as the first power / load node, a second power / load pad disposed as the second power / load node, and a reference pad disposed as the reference node, and a protective layer, A resistor element including a first end electrically connected to the substrate and serving as the first terminal of the resistor and a second end electrically connected to the reference pad and serving as the second terminal of the resistor, The one or more S / D electrodes are At least one first S / D electrode that is electrically connected to the first power / load pad and serves as the first source / drain terminal of the nitride-based bidirectional transistor and the drain terminal of the first substrate coupling transistor, At least one second S / D electrode that is electrically connected to the second power / load pad and serves as the second source / drain terminal of the nitride-based bidirectional transistor and the drain terminal of the second substrate coupling transistor, At least one third S / D electrode that is electrically connected to the substrate and the reference pad and serves as the source terminal of the first substrate coupling transistor, At least one fourth S / D electrode that is electrically connected to the substrate and the reference pad and serves as the source terminal of the second substrate coupling transistor, The one or more gate structures are At least one first gate structure that is electrically connected to the control pad and serves as the main gate terminal of the nitride-based bidirectional transistor, At least one second gate structure that is electrically connected to the control pad and serves as the gate terminal of the first substrate coupling transistor, A nitride-based bidirectional switching device having a substrate potential management ability according to claim 6, comprising at least one third gate structure electrically connected to the control pad and serving as the gate terminal of the second substrate coupling transistor.

8. The second S / D electrode is adjacent to be positioned relative to the first S / D electrode, The first gate structure is positioned between the first S / D electrode and the second S / D electrode, the third S / D electrode is adjacent to be positioned relative to the first S / D electrode, The second gate structure is positioned between the first S / D electrode and the third S / D electrode, the fourth S / D electrode is adjacent to be positioned relative to the second S / D electrode, and A nitride-based bidirectional switching device having a substrate potential management ability according to claim 7, wherein the third gate structure is positioned between the second S / D electrode and the fourth S / D electrode.

9. The nitride-based bidirectional switching device having a substrate potential management ability according to claim 7 or 8, wherein the resistance element is disposed in a two-dimensional electron gas region adjacent to a hetero-junction interface between the first nitride-based semiconductor layer and the second nitride-based semiconductor layer.

10. The nitride-based bidirectional switching device having a substrate potential management ability according to claim 7 or 8, wherein the resistance element is disposed on the second nitride-based semiconductor layer and is made of the same material as the gate structure.

11. The nitride-based bidirectional switching device having a substrate potential management ability according to claim 7 or 8, wherein the resistance element is disposed on the first passivation layer and is made of the same material as the S / D electrode.

12. A nitride-based bidirectional switching device having a substrate potential management ability according to claim 7 or 8, further comprising a third conductive layer disposed in the second passivation layer and patterned to form the resistance element.

13. The nitride-based bidirectional switching device having a substrate potential management ability according to claim 7 or 8, wherein the resistance element is disposed on the second passivation layer and is made of the same material as the first conductive trace.

14. The nitride-based bidirectional switching device having substrate potential management ability according to claim 7 or 8, wherein the resistive element is disposed on the third passivation layer and is made of the same material as the second conductive trace. **Claim 15**: A method for manufacturing a nitride-based switching device, wherein the nitride-based switching device includes a nitride-based bidirectional transistor, a first substrate coupling transistor, and a second substrate coupling transistor. Forming a first nitride-based semiconductor layer on a substrate. Forming a second nitride-based semiconductor layer on the first nitride-based semiconductor layer. Disposing a gate semiconductor layer on the second nitride-based semiconductor layer, disposing a gate electrode layer on the gate semiconductor layer, and patterning the gate semiconductor layer and the gate electrode layer to form one or more gate structures. Forming a first passivation layer on the second nitride-based semiconductor layer to cover the gate structure. Forming one or more openings in the first passivation layer to expose some regions of the second nitride-based semiconductor layer, disposing an S / D electrode layer to cover the exposed regions of the first passivation layer and the second nitride-based semiconductor layer, and patterning the S / D electrode layer to form one or more S / D electrodes that penetrate the first passivation layer and are in contact with the second nitride-based semiconductor layer. Forming a second passivation layer on the first passivation layer to cover the S / D electrodes. Forming one or more first conductive vias in the second passivation layer. Forming a first conductive layer on the second passivation layer and patterning the first conductive layer to form one or more first patterned conductive traces. Forming a third passivation layer on the first conductive layer to cover the one or more conductive traces. Forming one or more second conductive vias in the third passivation layer. Forming at least one gallium through-via (TGV) that extends longitudinally from the second conductive layer and penetrates into the substrate. Forming the second conductive layer on the third passivation layer and patterning the second conductive layer to form one or more second patterned conductive traces. A protective layer is formed over the second conductive layer, and the protective layer is patterned to form one or more openings to expose one or more conductive pads, wherein the one or more conductive pads include a control pad, a first power / load pad, a second power / load pad, and a reference pad. The control pad serves as a control node of the nitride-based switching device, the first power / load pad serves as a first power / load node of the nitride-based switching device, the second power / load pad serves as a second power / load node of the nitride-based switching device, and the reference pad serves as a reference node of the nitride-based switching device. Each terminal of the nitride-based bidirectional transistor is formed by an electrical connection between the S / D electrode or the gate structure and the conductive pad. Each terminal of the first substrate coupling transistor and the second substrate coupling transistor is formed by an electrical connection between the S / D electrode and the substrate or the conductive pad. The substrate is electrically connected to a resistor via the reference node. A method for manufacturing a nitride-based switching device, characterized in that when a high-level voltage is applied to the control node, the first substrate coupling transistor has a first resistance lower than a third resistance of the resistor, and the second substrate coupling transistor has a second resistance lower than the third resistance, and the potential of the substrate is basically equal to the lower one of the potentials of the first power / load node and the second power / load node.

16. Further comprising the nitride-based bidirectional transistor, the first substrate coupling transistor, and the second substrate coupling transistor, which are configured in the following steps. At least one first S / D electrode is electrically connected to the first power / load pad to form a first S / D terminal of the nitride-based bidirectional transistor and a drain terminal of the first substrate coupling transistor. At least one second S / D electrode is electrically connected to the second power / load pad to form a second S / D terminal of the nitride-based bidirectional transistor and a drain terminal of the second substrate coupling transistor. At least one third S / D electrode is electrically connected to the substrate and the reference pad to form a source terminal of the first substrate coupling transistor. electrically connecting at least one fourth S / D electrode to the substrate and the reference pad to form a source terminal of the second substrate coupling transistor, electrically connecting at least one first gate structure to the control pad to form a main gate terminal of the nitride-based bidirectional transistor, electrically connecting at least one second gate structure to the control pad to form a gate terminal of the first substrate coupling transistor, A method for manufacturing a nitride-based switching device according to claim 15, characterized in that at least one third gate structure is electrically connected to the control pad to form a gate terminal of the second substrate coupling transistor.

17. A method for manufacturing a nitride-based switching device according to claim 15, characterized in that one or more resistor elements are formed by being patterned in a two-dimensional electron gas (2DEG) region adjacent to a hetero-junction interface between the first nitride-based semiconductor layer and the second nitride-based semiconductor layer.

18. The method further includes the nitride-based bidirectional transistor, the first substrate coupling transistor, the second substrate coupling transistor, and the resistor, which are configured by the following steps. electrically connecting at least one first S / D electrode to the first power / load pad to form a first S / D terminal of the nitride-based bidirectional transistor and a drain terminal of the first substrate coupling transistor, electrically connecting at least one second S / D electrode to the second power / load pad to form a second S / D terminal of the nitride-based bidirectional transistor and a drain terminal of the second substrate coupling transistor, electrically connecting at least one third S / D electrode to the substrate to form a source terminal of the first substrate coupling transistor, electrically connecting at least one fourth S / D electrode to the substrate to form a source terminal of the second substrate coupling transistor, electrically connecting at least one first gate structure to the control pad to form a main gate terminal of the nitride-based bidirectional transistor, electrically connecting at least one second gate structure to the control pad to form a gate terminal of the first substrate coupling transistor, At least one third gate structure is electrically connected to the control pad to form a gate terminal of the second substrate coupling transistor, a first end of one resistor element is electrically connected to the substrate to form a first terminal of the resistor, A method for manufacturing a nitride-based switching device according to claim 17, wherein a second end of the resistor element is electrically connected to the reference pad to form a second terminal of the resistor.

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