Components for semiconductor manufacturing equipment

Abstract

The wafer stage 10 includes a ceramic plate 20 having a wafer placement surface 21 on the upper surface and incorporating electrostatic electrodes 22, a base plate 30 provided on the lower surface 23 of the ceramic plate 20 and incorporating a refrigerant flow path 32, a base plate through hole 34 penetrating the base plate 30 in the vertical direction, an insulating tube 50 inserted into the base plate through hole 34, and a resin-containing adhesive layer 60 provided between the upper surface 50a of the insulating tube 50 and the lower surface 23 of the ceramic plate 20 and between the outer peripheral surface 50b of the insulating tube 50 and the inner peripheral surface 34b of the base plate through hole 34 for fixing the insulating tube 50. The thermal conductivity of the insulating tube 50 is 10 W / mK or less.

Description

Technical Field

[0001] The present invention relates to a member for a semiconductor manufacturing apparatus.

Background Art

[0002] Conventionally, a member for a semiconductor manufacturing apparatus including a ceramic plate having a wafer placement surface on the upper surface and incorporating electrodes, a base plate provided on the lower surface of the ceramic plate, a through hole penetrating the base plate in the vertical direction, and an insulating tube inserted into the through hole has been known. For example, Patent Document 1 discloses fixing an alumina insulating tube to a through hole with an adhesive layer made of silicone resin in such a semiconductor manufacturing apparatus member.

Prior Art Document

Patent Document

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, when an alumina insulating tube is fixed to a through hole with an adhesive layer made of silicone resin, temperature variations may occur in the portion directly above the central axis of the insulating tube on the wafer placement surface for each product.

[0005] The present invention has been made to solve the above-described problems, and the main object is to suppress temperature variations in the portion directly above the central axis of the insulating tube on the wafer placement surface for each product.

Means for Solving the Problems

[0006] [1] The member for a semiconductor manufacturing apparatus of the present invention is a ceramic plate having a wafer placement surface on the upper surface and incorporating electrodes, A base plate provided on the lower surface of the ceramic plate and incorporating a refrigerant flow path, A through hole penetrating the base plate in the vertical direction, An insulating tube inserted into the through hole, A resin-containing adhesive layer provided on at least one of the upper surface of the insulating tube and the lower surface of the ceramic plate and between the outer peripheral surface of the insulating tube and the inner peripheral surface of the through hole, for fixing the insulating tube, A member for a semiconductor manufacturing apparatus, comprising: The thermal conductivity of the insulating tube is 10 W / mK or less. It is such a thing.

[0007] In this member for a semiconductor manufacturing apparatus, the thermal conductivity of the insulating tube is 10 W / mK or less. On the other hand, the thermal conductivity of the resin-containing adhesive layer for fixing the insulating tube is low because it contains resin. Therefore, the difference between the thermal conductivity of the insulating tube and the thermal conductivity of the resin-containing adhesive layer does not become so large. As a result, for example, even if the thickness (vertical length) between the upper surface of the insulating tube and the lower surface of the ceramic plate in the resin-containing adhesive layer varies from product to product, or even if the amount of upward creep between the outer peripheral surface of the insulating tube and the inner peripheral surface of the through hole in the resin-containing adhesive layer varies from product to product, it is possible to suppress the variation in the temperature of the portion directly above the central axis of the insulating tube on the wafer mounting surface from product to product.

[0008] In this specification, "upper" and "lower" do not represent an absolute positional relationship, but a relative positional relationship. Therefore, depending on the orientation of the member for a semiconductor manufacturing apparatus, "upper" and "lower" may become "lower" and "upper", or "left" and "right", or "front" and "rear".

[0009] [2] In the member for a semiconductor manufacturing apparatus of the present invention (the member for a semiconductor manufacturing apparatus described in [1] above), the thermal conductivity of the resin-containing adhesive layer may be 5 W / mK or less. By doing so, the difference between the thermal conductivity of the insulating tube and the thermal conductivity of the resin-containing adhesive layer can be made sufficiently small.

[0010] [3] In the member for a semiconductor manufacturing apparatus of the present invention (the member for a semiconductor manufacturing apparatus described in [1] or [2] above), the thermal conductivity of the insulating tube may be 10 times or less that of the resin-containing adhesive layer. By doing so, the difference between the thermal conductivity of the insulating tube and that of the resin-containing adhesive layer can be made sufficiently small.

[0011] [4] In the member for a semiconductor manufacturing apparatus of the present invention (the member for a semiconductor manufacturing apparatus described in any one of [1] to [3] above), the thermal conductivity of the base plate may be 50 W / mK or less. By doing so, the effects of the present invention can be easily obtained.

[0012] [5] In the member for a semiconductor manufacturing apparatus of the present invention (the member for a semiconductor manufacturing apparatus described in any one of [1] to [4] above), the insulating tube may be made of zirconia ceramic or PEEK.

[0013] [6] In the member for a semiconductor manufacturing apparatus of the present invention (the member for a semiconductor manufacturing apparatus described in any one of [1] to [4] above), the resin-containing adhesive layer may be made of a silicone resin.

[0014] [7] In the member for a semiconductor manufacturing apparatus of the present invention (the member for a semiconductor manufacturing apparatus described in any one of [1] to [6] above), the resin-containing adhesive layer may further contain a filler.

[0015] [8] In the member for a semiconductor manufacturing apparatus of the present invention (the member for a semiconductor manufacturing apparatus described in any one of [1] to [7] above), the base plate through-hole is a power supply member insertion hole provided downward from the electrode in the member for a semiconductor manufacturing apparatus and through which a power supply member for supplying power to the electrode is inserted, or a part of a lift pin hole that penetrates the member for a semiconductor manufacturing apparatus in the vertical direction and through which a lift pin is inserted, or a part of a gas hole that penetrates the member for a semiconductor manufacturing apparatus in the vertical direction and supplies gas to the wafer mounting surface.

Brief Description of the Drawings

[0016]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Mode for Carrying Out the Invention

[0017] Preferred embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a plan view of the wafer stage 10, FIG. 2 is a cross-sectional view taken along line A-A in FIG. 1, and FIG. 3 is a partial enlarged view of FIG. 2 (an enlarged view within the frame indicated by the two-dot chain line).

[0018] The wafer stage 10 is an example of a member for a semiconductor manufacturing apparatus of the present invention. As shown in FIG. 2, it includes a ceramic plate 20, a base plate 30, a bonding layer 40, a base plate through-hole 34, an insulating tube 50, and a power supply member 70.

[0019] The ceramic plate 20 is a ceramic disk (e.g., with a diameter of 300 mm and a thickness of 5 mm) such as an alumina sintered body or an aluminum nitride sintered body. The upper surface of the ceramic plate 20 serves as a wafer placement surface 21 for placing the wafer W. The ceramic plate 20 incorporates an electrostatic electrode 22. Although not shown in the figure, an annular seal band is formed along the outer edge on the wafer placement surface 21 of the ceramic plate 20, and a plurality of circular small protrusions are formed on the entire inner surface of the seal band. The electrostatic electrode 22 is a planar mesh electrode and is connected to an external DC power supply (not shown) via a power supply member 70. When a DC voltage is applied to the electrostatic electrode 22, the wafer W is adsorbed and fixed to the wafer placement surface 21 by the electrostatic adsorption force, and when the application of the DC voltage is released, the adsorption and fixation of the wafer W to the wafer placement surface 21 are released.

[0020] The base plate 30 is a disk (e.g., a disk with the same diameter as or larger than the ceramic plate 20 and a thickness of 25 mm) with good electrical conductivity and thermal conductivity. Inside the base plate 30, a refrigerant flow path 32 through which the refrigerant circulates is formed. The refrigerant flowing through the refrigerant flow path 32 is preferably a liquid and preferably has electrical insulation properties. Examples of the electrically insulating liquid include fluorine-based inert liquids. As shown in FIG. 1, the refrigerant flow path 32 is formed in a spiral shape in one stroke from one end (inlet 32in) to the other end (outlet 32out) over the entire base plate 30 in a plan view. The inlet 32in and the outlet 32out of the refrigerant flow path 32 are respectively connected to the supply port and the recovery port of an external refrigerant device (not shown). The refrigerant supplied from the supply port of the external refrigerant device to the inlet 32in of the refrigerant flow path 32 returns from the outlet 32out of the refrigerant flow path 32 to the recovery port of the external refrigerant device after passing through the refrigerant flow path 32, and after being temperature-adjusted, is supplied again from the supply port to the inlet 32in of the refrigerant flow path 32. The base plate 30 is connected to a high-frequency (RF) power supply and is also used as an RF electrode.

[0021] Examples of the material of the base plate 30 include, for example, a metal material, a composite material of metal and ceramic, etc. Examples of the metal material include Al, Ti, Mo, or their alloys. Examples of the composite material of metal and ceramic include a metal matrix composite (MMC), a ceramic matrix composite (CMC), etc. Specific examples of such composite materials include a material containing Si, SiC, and Ti (also referred to as SiSiCTi), a material obtained by impregnating a SiC porous body with Al and / or Si, a composite material of Al2O3 and TiC, etc. As the material of the base plate 30, it is preferable to select a material having a coefficient of thermal expansion close to that of the material of the ceramic plate 20. When the material of the ceramic plate 20 is alumina, the material of the base plate 30 is preferably pure Ti or an α-βTi alloy. This is because the coefficient of thermal expansion of pure Ti or an α-βTi alloy is close to that of alumina. The base plate 30 may be formed of a material having a lower thermal conductivity than Al, or may be formed of a material having a lower thermal conductivity than the material of the ceramic plate 20 (for example, alumina). Examples of such materials include, for example, Ti-containing materials typified by pure Ti and α-βTi. When the material of the base plate 30 is a Ti-containing material, the effect of the present invention is high. The thermal conductivity of the base plate 30 may be 50 W / mK or less, or may be 5 to 20 W / mK. For example, the thermal conductivity of pure Ti is 17 W / mK, and the thermal conductivity of an α-βTi alloy is 7.5 W / mK. Note that the thermal conductivity of Al is 150 to 200 W / mK.

[0022] The bonding layer 40 is a resin adhesive layer here, and joins the lower surface of the ceramic plate 20 and the upper surface of the base plate 30. Examples of the material of the resin adhesive layer include insulating resins such as epoxy resin, acrylic resin, and silicone resin. The bonding layer 40 may be one in which a filler is contained in the insulating resin. The filler preferably has a higher thermal conductivity than the insulating resin of the bonding layer 40, and may be, for example, alumina, aluminum nitride, etc.

[0023] The base plate through-hole 34 is a substantially cylindrical hole that penetrates the base plate 30 in the vertical direction and is provided so as not to penetrate the refrigerant flow path 32. The base plate through-hole 34 communicates with the bonding layer through-hole 44. The bonding layer through-hole 44 is a substantially cylindrical hole that penetrates the bonding layer 40 in the vertical direction.

[0024] The insulating tube 50 is housed in the base plate through-hole 34 and the bonding layer through-hole 44. The insulating tube 50 is a substantially cylindrical member made of an electrically insulating material (such as ceramic or resin) and has an insulating tube through-hole 54 that penetrates the insulating tube 50 in the vertical direction along the central axis of the insulating tube 50.

[0025] As shown in FIG. 3, the insulating tube 50 is adhered to the lower surface 23 of the ceramic plate 20 and the inner peripheral surface 34b of the base plate through-hole 34 via a resin-containing adhesive layer 60. The upper end portion of the base plate through-hole 34 has a tapered surface 34c with a chamfered C shape. The resin-containing adhesive layer 60 includes an insulating tube upper surface adhesive portion 61 that adheres the lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50, and an insulating tube outer peripheral surface adhesive portion 62 that is continuous with the insulating tube upper surface adhesive portion 61 and adheres the inner peripheral surface 34b of the base plate through-hole 34 and the outer peripheral surface 50b of the insulating tube 50. The insulating tube outer peripheral surface adhesive portion 62 is provided so as to reach a position lower than the ceiling surface 32a of the refrigerant flow path 32 from the lower surface 23 of the ceramic plate 20. The thickness t (length in the vertical direction) of the insulating tube upper surface adhesive portion 61 is preferably, for example, 0.01 mm or more and 0.1 mm or less. The height h (length in the vertical direction, also referred to as the climbing amount) of the insulating tube outer peripheral surface adhesive portion 62 is preferably, for example, 3 mm or more and 10 mm or less. The distance (length in the radial direction) w between the inner peripheral surface 34b (excluding the tapered surface 34c) of the base plate through-hole 34 and the outer peripheral surface 50b of the insulating tube 50 is preferably, for example, 0.1 mm or more and 0.3 mm or less. Examples of the material of the resin-containing adhesive layer 60 include insulating resins such as epoxy resin, acrylic resin, and silicone resin. The resin-containing adhesive layer 60 may be a material in which a filler is contained in the insulating resin. The filler preferably has a higher thermal conductivity than the insulating resin of the resin-containing adhesive layer 60, and may be, for example, alumina or aluminum nitride. The resin-containing adhesive layer 60 may have a higher thermal conductivity than the bonding layer 40.

[0026] The thermal conductivity of the insulating tube 50 is preferably 10 W / mK or less, more preferably 5 W / mK or less. The thermal conductivity of the resin-containing adhesive layer 60 is preferably 5 W / mK or less, more preferably 2.5 W / mK or less. The thermal conductivity of the insulating tube 50 is preferably 10 times or less, more preferably 15 times or less, that of the resin-containing adhesive layer 60. The difference between the thermal conductivity of the insulating tube 50 and that of the resin-containing adhesive layer 60 is preferably 5 W / mK or less, more preferably 1 W / mK or less. Suitable combinations of the material of the insulating tube 50 and the material of the resin-containing adhesive layer 60 include a combination where the insulating tube 50 is zirconia ceramic (thermal conductivity 2 W / mK) and the resin-containing adhesive layer 60 is silicone resin with filler (e.g., alumina) (thermal conductivity 2.2 W / mK), and a combination where the insulating tube 50 is PEEK (thermal conductivity 0.3 W / mK) and the resin-containing adhesive layer 60 is silicone resin (thermal conductivity 0.2 W / mK).

[0027] The power supply member 70 is, for example, a metal rod. The metal used for the power supply member 70 is, for example, W, Mo, Ni, etc., and a metal having a coefficient of thermal expansion close to that of the ceramic plate 20 is preferred. As shown in FIG. 3, the power supply member 70 is inserted into the insulating tube through-hole 54 and the bottomed hole 24 of the ceramic plate, and is electrically connected to the electrostatic electrode 22 exposed at the bottom of the bottomed hole 24 of the ceramic plate to supply power to the electrostatic electrode 22. The bottomed hole 24 of the ceramic plate is a substantially cylindrical hole provided from the lower surface 23 of the ceramic plate 20 to the electrostatic electrode 22, and has a smaller diameter than the insulating tube through-hole 54. The power supply member 70 is electrically insulated from the base plate 30 by the insulating tube 50 disposed in the base plate through-hole 34 and the bonding layer through-hole 44. Note that the base plate through-hole 34, the bonding layer through-hole 44, and the bottomed hole 24 of the ceramic plate correspond to the power supply member insertion holes of the present invention.

[0028] Next, among the manufacturing methods of the wafer stage 10, the process of bonding the insulating tube 50 will be described with reference to FIG. 4. FIG. 4 is an explanatory diagram of this process. In FIGS. 4A to 4D, the wafer mounting surface 21 of the ceramic plate 20 is oriented downward. Also, FIGS. 4A to 4D are partial enlarged views in which the peripheral portion of the base plate through-hole 34 is enlarged.

[0029] First, a bonded body in which the ceramic plate 20 and the base plate 30 are joined by the bonding layer 40 is prepared (FIG. 4A). In this bonded body, the electrostatic electrode 22 is embedded in the ceramic plate 20. Also, in this bonded body, the power supply member 70 is inserted into the bottomed hole 24 of the ceramic plate through the base plate through-hole 34 and the bonding layer through-hole 44, and is electrically connected to the electrostatic electrode 22. Next, an adhesive 60x is disposed between the tapered surface 34c of the base plate through-hole 34 and the lower surface 23 of the ceramic plate 20, and the insulating tube 50 is inserted into the base plate through-hole 34 so that the upper surface 50a of the insulating tube 50 faces the adhesive 60x (FIG. 4B). Subsequently, when the insulating tube 50 is pushed toward the ceramic plate 20 side, the adhesive 60x spreads between the lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50, and between the inner peripheral surface 34b of the base plate through-hole 34 and the outer peripheral surface 50b of the insulating tube 50 (FIG. 4C). Further, when the insulating tube 50 is pushed toward the ceramic plate 20 side, the adhesive 60x is filled between the lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50 and climbs up between the inner peripheral surface 34b of the base plate through-hole 34 and the outer peripheral surface 50b of the insulating tube 50. In this state, when the adhesive 60x solidifies, the insulating tube 50 is bonded to the ceramic plate 20 and the base plate 30 via the resin-containing adhesive layer 60. Thus, the wafer stage 10 is obtained (FIG. 4D).

[0030] Next, a usage example of the wafer stage 10 configured in this way will be described. First, with the wafer stage 10 installed in a chamber (not shown), the wafer W is placed on the wafer placement surface 21. Then, the inside of the chamber is depressurized by a vacuum pump and adjusted to a predetermined degree of vacuum, and a DC voltage is applied to the electrostatic electrode 22 of the ceramic plate 20 to generate an electrostatic adsorption force, and the wafer W is adsorbed and fixed to the wafer placement surface 21. Next, the inside of the chamber is set to a reaction gas atmosphere at a predetermined pressure (for example, several tens to several hundreds of Pa), and in this state, an RF voltage is applied between an upper electrode (not shown) provided on the ceiling portion inside the chamber and the base plate 30 of the wafer stage 10 to generate plasma. The surface of the wafer W is processed by the generated plasma. A refrigerant is circulated in the refrigerant flow path 32 of the base plate 30 in a timely manner.

[0031] When the wafer W is processed by plasma in this way, the heat input by the plasma is removed by the base plate 30, and the wafer placement surface 21 is controlled to a desired temperature. Here, the thickness t of the upper surface adhesion portion 61 of the insulating tube and the height h which is the amount of upward creep of the outer peripheral surface adhesion portion 62 of the insulating tube may vary for each product (wafer stage 10). Even if the thickness t and the height h vary in this way, it is preferable that the temperature immediately above the power supply member does not change significantly for each product, specifically, the temperature difference ΔT obtained by subtracting the outer peripheral temperature from the temperature immediately above the power supply member does not change significantly for each product. In the present embodiment, this point is realized by setting the thermal conductivity of the insulating tube 50 to 10 W / mK or less. The measurement points of the temperature immediately above the power supply member and the outer peripheral temperature are as shown in FIG. 3. The outer peripheral temperature becomes a relatively stable temperature regardless of the product.

[0032] FIG. 5 is a graph showing the relationship between the thickness t and the temperature difference ΔT and the relationship between the height h and the temperature difference ΔT when the thermal conductivity of the resin-containing adhesive layer 60 is fixed at 2.2 W / mK and the thermal conductivity of the insulating tube 50 is varied variously. For the materials, the ceramic plate 20 is alumina (thermal conductivity 30 W / mK), the base plate 30 is Ti (thermal conductivity 17.5 W / mK), the bonding layer 40 is silicone resin (thermal conductivity 0.2 W / mK), the resin-containing adhesive layer 60 is alumina filler-containing silicone resin (thermal conductivity 2.2 W / mK), the power supply member 70 is Mo (thermal conductivity 138 W / mK) and Cu (thermal conductivity 398 W / mK). The space inside the base plate through-hole 34 is assumed to be filled with air (thermal conductivity 0.024 W / mK). Regarding the relationship between the thickness t and the temperature difference ΔT, the height h was set uniformly to 6.3 mm, and regarding the relationship between the height h and the temperature difference ΔT, the thickness t was set uniformly to 0.025 mm. The thermal conductivity of the insulating tube 50 was 30 W / mK in FIG. 5A, 10 W / mK in FIG. 5B, 5 W / mK in FIG. 5C, 3 W / mK in FIG. 5D, 2 W / mK in FIG. 5E, and 0.3 W / mK in FIG. 5F. For example, zirconia ceramic was used as the material of the insulating tube 50 with a thermal conductivity of 2 W / mK in FIG. 5E.

[0033] As can be seen from the graph of FIG. 5, the variation in the temperature difference ΔT with respect to the thickness t and the variation in the temperature difference ΔT with respect to the height h could be made smaller than in the case of 30 W / mK if the thermal conductivity of the insulating tube 50 was 10 W / mK or less (especially 5 W / mK or less). In FIGS. 5B to 5F, the thermal conductivity of the insulating tube 50 was 10 times or less the thermal conductivity of the resin-containing adhesive layer 60.

[0034] FIG. 6 is a graph showing the relationship between the thickness t and the temperature difference ΔT and the relationship between the height h and the temperature difference ΔT when the thermal conductivity of the resin-containing adhesive layer 60 is fixed at 0.2 W / mK and the thermal conductivity of the insulating tube 50 is varied variously. Regarding the materials, it was the same as in FIG. 5 except that the resin-containing adhesive layer 60 was a silicone resin (thermal conductivity 0.2 W / mK). Regarding the relationship between the thickness t and the temperature difference ΔT, the height h was set to 6.3 mm uniformly, and regarding the relationship between the height h and the temperature difference ΔT, the thickness t was set to 0.026 mm uniformly. The thermal conductivity of the insulating tube 50 was 30 W / mK in FIG. 6A, 2 W / mK in FIG. 6B, and 0.3 W / mK in FIG. 6C. For example, PEEK can be mentioned as the material of the insulating tube 50 with a thermal conductivity of 0.3 W / mK in FIG. 6C. Also in FIG. 6, the variation of the temperature difference ΔT with respect to the thickness t and the variation of the temperature difference ΔT with respect to the height h showed the same tendency as in FIG. 5.

[0035] In the wafer mounting table 10 described in detail above, the thermal conductivity of the insulating tube 50 is 10 W / mK or less. On the other hand, the thermal conductivity of the resin-containing adhesive layer 60 that fixes the insulating tube 50 is low because it contains resin. Therefore, the difference between the thermal conductivity of the insulating tube 50 and the thermal conductivity of the resin-containing adhesive layer 60 does not become so large. As a result, for example, even if the thickness t of the insulating tube upper surface adhesive portion 61 in the resin-containing adhesive layer 60 varies from product to product, or the height h of the insulating tube outer peripheral surface adhesive portion 62 in the resin-containing adhesive layer 60 varies from product to product, it is possible to suppress the variation of the temperature of the portion directly above the central axis of the insulating tube 50 (the portion directly above the power supply member) on the wafer mounting surface 21 from product to product.

[0036] Also, the thermal conductivity of the resin-containing adhesive layer 60 is preferably 5 W / mK or less. By doing so, the difference between the thermal conductivity of the insulating tube 50 and the thermal conductivity of the resin-containing adhesive layer 60 can be made sufficiently small.

[0037] Furthermore, the thermal conductivity of the insulating tube 50 is preferably 10 times or less the thermal conductivity of the resin-containing adhesive layer 60. By doing so, the difference between the thermal conductivity of the insulating tube 50 and the thermal conductivity of the resin-containing adhesive layer 60 can be made sufficiently small.

[0038] Furthermore, the thermal conductivity of the base plate 30 is preferably 50 W / mK or less, more preferably 5 to 20 W / mK. By doing so, the effects of the present invention can be easily obtained.

[0039] And, as a suitable combination of the material of the insulating tube 50 and the material of the resin-containing adhesive layer 60, there are a combination where the insulating tube 50 is zirconia ceramic and the resin-containing adhesive layer 60 is a silicone resin containing a filler (for example, alumina), a combination where the insulating tube 50 is PEEK and the resin-containing adhesive layer 60 is a silicone resin, and the like. By doing so, the difference between the thermal conductivity of the insulating tube 50 and the thermal conductivity of the resin-containing adhesive layer 60 becomes small, so that the effects of the present invention can be easily obtained. Note that the difference between the thermal conductivity of the insulating tube 50 and the thermal conductivity of the resin-containing adhesive layer 60 is preferably 3 W / mK or less, more preferably 1 W / mK or less.

[0040] Note that the present invention is not limited to the above-described embodiments at all, and it goes without saying that the present invention can be implemented in various modes as long as it belongs to the technical scope of the present invention.

[0041] In the above-described embodiments, a resin adhesive layer is exemplified as the bonding layer 40, but it is not particularly limited thereto. For example, a metal bonding layer may be employed as the bonding layer 40. The metal bonding layer can be formed by well-known TCB (Thermal compression bonding) using a metal bonding material (for example, an Al-Mg-based bonding material or an Al-Si-Mg-based bonding material).

[0042] In the above-described embodiments, the electrostatic electrode 22 is incorporated in the ceramic plate 20, but it is not particularly limited thereto. For example, instead of or in addition to the electrostatic electrode 22, a heater electrode (resistance heating element) may be incorporated, or an electrode for plasma generation (RF electrode) may be incorporated.

[0043] In the above-described embodiment, the base plate through-hole 34 is configured as a power supply member insertion hole, but it is not particularly limited thereto. For example, the base plate through-hole 34 may be configured as a lift pin hole or a gas hole. In such cases, the power supply member 70 is not inserted into the base plate through-hole 34. The lift pin hole penetrates the wafer mounting table 10 in the vertical direction and is a hole for inserting a lift pin for moving the wafer W up and down with respect to the wafer mounting surface 21. When the wafer W is supported by, for example, three lift pins, the lift pin holes are provided at three locations. The gas hole penetrates the wafer mounting table 10 in the vertical direction and is a hole for supplying gas (e.g., He gas) to the wafer mounting surface 21. FIG. 7 is an example when the base plate through-hole 34 is used as part of the gas hole 80. The gas hole 80 is composed of the base plate through-hole 34, the bonding layer through-hole 44, and the ceramic plate through-hole 84 and so on. The ceramic plate through-hole 84 penetrates the ceramic plate 20 and the electrostatic electrode 22 in the vertical direction so as to be coaxial with the base plate through-hole 34. The electrostatic electrode 22 is not exposed on the inner peripheral surface of the ceramic plate through-hole 84. In FIG. 7, the same components as those in the above-described embodiment are denoted by the same reference numerals. The lift pin holes can also be provided in the same manner as the gas hole 80.

[0044] In the above-described embodiment, the resin-containing adhesive layer 60 includes both the upper surface adhesive portion 61 of the insulating tube and the outer peripheral surface adhesive portion 62 of the insulating tube, but the resin-containing adhesive layer 60 may include either the upper surface adhesive portion 61 of the insulating tube or the outer peripheral surface adhesive portion 62 of the insulating tube.

Industrial Applicability

[0045] The member for a semiconductor manufacturing apparatus of the present invention can be used, for example, in the field of processing wafers with plasma or the like.

Explanation of Reference Numerals

[0046] 10 Wafer mounting table, 20 Ceramic plate, 21 Wafer mounting surface, 22 Electrostatic electrode, 23 Lower surface, 24 Bottomed hole of ceramic plate, 30 Base plate, 32 Refrigerant flow path, 32a Ceiling surface, 32in Inlet, 32out Outlet, 34 Through hole of base plate, 34b Inner peripheral surface, 34c Tapered surface, 40 Bonding layer, 44 Through hole of bonding layer, 50 Insulating tube, 50a Upper surface, 50b Outer peripheral surface, 54 Through hole of insulating tube, 60 Resin-containing adhesive layer, 60x Adhesive, 61 Adhesive part of upper surface of insulating tube, 62 Adhesive part of outer peripheral surface of insulating tube, 70 Power supply member, 80 Gas hole, 84 Through hole of ceramic plate.

Claims

1. A ceramic plate having a wafer placement surface on the upper surface and incorporating electrodes, A base plate provided on the lower surface of the ceramic plate and incorporating a refrigerant flow path, A through hole penetrating the base plate in the vertical direction, An insulating tube inserted into the through hole, A resin-containing adhesive layer provided on at least one of the upper surface of the insulating tube and the lower surface of the ceramic plate and between the outer peripheral surface of the insulating tube and the inner peripheral surface of the through hole, for fixing the insulating tube, A member for a semiconductor manufacturing apparatus, comprising: The insulating tube is made of ceramic, The thermal conductivity of the insulating tube is 10 W / mK or less, A member for a semiconductor manufacturing apparatus.

2. The thermal conductivity of the resin-containing adhesive layer is 5 W / mK or less, The member for a semiconductor manufacturing apparatus according to Claim 1.

3. The thermal conductivity of the insulating tube is 10 times or less the thermal conductivity of the resin-containing adhesive layer, The member for a semiconductor manufacturing apparatus according to Claim 1 or 2.

4. The thermal conductivity of the base plate is 50 W / mK or less, The member for a semiconductor manufacturing apparatus according to Claim 1 or 2.

5. The insulating tube is composed of zirconia ceramic, The member for a semiconductor manufacturing apparatus according to Claim 1 or 2.

6. The resin-containing adhesive layer is composed of silicone resin, The member for a semiconductor manufacturing apparatus according to Claim 1 or 2.

7. The resin-containing adhesive layer further contains a filler, The member for a semiconductor manufacturing apparatus according to Claim 1 or 2.

8. The base plate through hole is a power supply member insertion hole provided downward from the electrode in the member for a semiconductor manufacturing apparatus and through which a power supply member for supplying power to the electrode is inserted, or a part of a lift pin hole penetrating the member for a semiconductor manufacturing apparatus in the vertical direction and through which a lift pin is inserted, or a part of a gas hole penetrating the member for a semiconductor manufacturing apparatus in the vertical direction and supplying gas to the wafer placement surface, The member for a semiconductor manufacturing apparatus according to Claim 1 or 2.

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