Substrate Processing Apparatus and Method for Aligning Ring Members

Abstract

To perform an alignment of a ring member with high accuracy when exchanging a ring member in a substrate processing apparatus.SOLUTION: An substrate processing apparatus includes: a plasma processing chamber; a support stage housed in the plasma processing chamber; an inner edge ring provided around a substrate; an outer edge ring that is provided around the inner edge ring, and has an inner peripheral part overlapping an outer peripheral part of the inner edge ring when viewed from above and has a first alignment portion; an outer edge ring electrostatic chuck arranged at a position opposite to the outer edge ring, of the support stage; and a lifter configured to vertically move the inner edge ring and / or the outer edge ring. The inner edge ring is configured to be aligned with the outer edge ring by the first alignment portion in a state where the outer edge ring electrostatic chuck is driven and the outer edge ring is attracted.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a method for aligning a ring member.

Background Art

[0002] For example, Patent Document 1 proposes a plasma processing apparatus that places a wafer on a wafer placement surface of a placement table and places a first ring and a second ring on a ring placement surface of the placement table. The plasma processing apparatus has a drive mechanism that drives a lifter pin to be movable up and down, and proposes to lift and transfer at least one of the first ring and the second ring by the lifter pin.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of accurately aligning a ring member when replacing the ring member in a substrate processing apparatus.

Means for Solving the Problems

[0005] According to one aspect of the present disclosure, there is provided a substrate processing apparatus including: a plasma processing chamber; a susceptor accommodated in the plasma processing chamber; an inner edge ring provided around a substrate; and an outer edge ring provided around the inner edge ring, wherein an outer peripheral portion of the inner edge ring and an inner peripheral portion of the outer edge ring overlap in a top view and the outer edge ring has a first alignment portion, an electrostatic chuck for the outer edge ring disposed at a position facing the outer edge ring of the susceptor, and a lifter configured to move the inner edge ring and / or the outer edge ring up and down. The substrate processing apparatus aligns the inner edge ring with the outer edge ring by the first alignment portion while driving the electrostatic chuck for the outer edge ring to adsorb the outer edge ring.

Advantages of the Invention

[0006] According to one aspect, when replacing ring members in a substrate processing apparatus, the ring members can be accurately aligned.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Modes for Carrying Out the Invention

[0008] Hereinafter, modes for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals are given to the same components, and redundant descriptions may be omitted.

[0009] In this specification, in directions such as parallel, right angle, orthogonal, horizontal, vertical, up and down, left and right, etc., a deviation to the extent that the effects of the embodiment are not impaired is allowed. The shape of the corner is not limited to a right angle and may be arcuate and rounded. Parallel, right angle, orthogonal, horizontal, vertical, circle, coincidence may include substantially parallel, substantially right angle, substantially orthogonal, substantially horizontal, substantially vertical, substantially circle, substantially coincidence.

[0010] [Plasma Processing Apparatus] Hereinafter, a configuration example of a plasma processing system will be described. FIG. 1 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus 1. The plasma processing apparatus 1 is an example of a substrate processing apparatus in which ring members such as an edge ring are arranged inside.

[0011] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a control apparatus 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Further, the plasma processing apparatus 1 includes a substrate support unit 11 (support table) and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In an embodiment, the shower head 13 constitutes at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas discharge port for discharging gas from the plasma processing space. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0012] The substrate support unit 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Accordingly, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0013] In an embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and a first electrostatic electrode 114 disposed within the ceramic member 1111a, and a third electrostatic electrode 1111b. The electrostatic chuck 1111 may include a second electrostatic electrode 118 (see FIG. 9) described later. The first electrostatic electrode 114 is disposed at a position corresponding to the ring assembly 112 within the electrostatic chuck 1111. The third electrostatic electrode 1111b is disposed at a position corresponding to the substrate W within the electrostatic chuck 1111.

[0014] The ceramic member 1111a has a central region 111a. In an embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Further, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 31 and / or a DC (Direct Current) power supply (to be described later) 32 may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (to be described later) is supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as a plurality of lower electrodes. Further, the third electrostatic electrode 1111b may function as a lower electrode. Accordingly, the substrate support 11 includes at least one lower electrode.

[0015] The ring assembly 112 includes one or more annular members. In an embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0016] In the example of FIG. 1, the ring assembly 112 includes an inner edge ring 112a, an outer edge ring 112b, a cover ring 113a, and an insulating member 113b. The inner edge ring 112a, the outer edge ring 112b, the cover ring 113a, and the insulating member 113b are annular and are formed concentrically. Note that the ring assembly 112 will be described later with reference to FIG. 2.

[0017] Further, in the annular region 111b of the main body 111, a heat transfer gas supply unit having gas supply paths 116a and 116b for supplying backside gas for heat transfer between the back surface of the ring assembly 112 (outer edge ring 112b) and the annular region 111b is provided. Grooves 201a with a width of 50 μm to several hundred μm are formed annularly on the back surface (lower surface) of the outer edge ring 112b corresponding to the gas supply path 116a. The gas supply path 116b is arranged outside the gas supply path 116a. Grooves 201b with a width of 50 μm to several hundred μm are formed annularly on the back surface of the outer edge ring 112b corresponding to the gas supply path 116b. The backside gas is supplied to the gas supply paths 116a and 116b from a gas supply source (not shown). The gas supply paths 116a and 116b are also collectively referred to as the gas supply path 116. The gas supply paths 116a and 116b are not limited to both positions and may be in either one of the positions. As the backside gas, for example, He gas can be used. In the present disclosure, backside gas for heat transfer is supplied between the back surface of the outer edge ring 112b (grooves 201a, 201b) and the annular region 111b. However, the heat transfer gas supply unit having the gas supply path 116 is not limited to this, and backside gas for heat transfer may be supplied between the back surface of at least one of the inner edge ring 112a and the outer edge ring 112b and the annular region 111b. There may be a heat transfer sheet in at least a part between the back surface of the outer edge ring 112b and the annular region 111b which is the upper surface of the electrostatic chuck 1111 (ring support surface).

[0018] Further, the substrate support portion 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In an embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. Further, the substrate support portion 11 may include a heat transfer gas supply unit (see the gas supply path 115 in FIG. 2) configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.

[0019] The shower head 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c. Further, the shower head 13 includes at least one upper electrode. The gas introduction portion may include, in addition to the shower head 13, one or more side gas injection parts (SGI: Side Gas Injector) attached to one or more openings formed in the side wall 10a.

[0020] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In an embodiment, the gas supply unit 20 is configured to supply at least one process gas from the corresponding gas source 21 to the shower head 13 via the corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Further, the gas supply unit 20 may include one or more flow modulation devices for modulating or pulsing the flow rate of at least one process gas.

[0021] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Thereby, plasma is formed from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generation unit configured to generate plasma from one or more process gases in the plasma processing chamber 10. Also, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and the ion component in the formed plasma can be drawn into the substrate W.

[0022] In an embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In an embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In an embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0023] The second RF generation unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In an embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In an embodiment, the bias RF signal has a frequency within the range of 100 kHz to 60 MHz. In an embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0024] Further, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a, a second DC generation unit 32b, and a third DC generation unit 33. In an embodiment, the first DC generation unit 32a is connected to at least one lower electrode and is configured to generate a first DC signal. The generated first bias DC signal is applied to at least one lower electrode. In an embodiment, the second DC generation unit 32b is connected to at least one upper electrode and is configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode. In an embodiment, the third DC generation unit 33 is connected to at least the first electrostatic electrode 114 and is configured to generate a third DC signal. The generated third DC signal is applied to at least the first electrostatic electrode 114, whereby a DC voltage is applied to the first electrostatic electrode 114. The generated third DC signal may be applied to the second electrostatic electrode 118. Note that the first electrostatic electrode 114 may be provided in the same dielectric (the ceramic member 1111a in FIG. 1) as the dielectric in which the third electrostatic electrode 1111b is disposed, or the ceramic member 1111a may be separated into a central region 111a and an annular region 111b and provided in a dielectric different from the dielectric in which the third electrostatic electrode 1111b is disposed.

[0025] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a pulse waveform that is rectangular, trapezoidal, triangular, or a combination thereof. In an embodiment, a waveform generation unit for generating a sequence of voltage pulses from a DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Accordingly, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses may have a positive polarity or a negative polarity. Also, the sequence of voltage pulses may include one or more positive-polarity voltage pulses and one or more negative-polarity voltage pulses within one cycle. Note that the first and second DC generation units 32a and 32b may be provided in addition to the RF power source 31, or the first DC generation unit 32a may be provided in place of the second RF generation unit 31b.

[0026] The exhaust system 40 may be connected to, for example, the gas outlet 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve adjusts the pressure within the plasma processing space 10s, and the plasma processing space 10s is brought into a vacuum (reduced pressure) state. The vacuum pump may include a turbo molecular pump, a dry pump, or a combination thereof.

[0027] The control device 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to execute various processes described in the present disclosure. The control device 2 can be configured to control each element of the plasma processing apparatus 1 so as to execute the various processes described herein. In an embodiment, part or all of the control device 2 may be included in the plasma processing apparatus 1. The control device 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control device 2 is realized by, for example, a computer 2a. The processing unit 2a1 can be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 and executed. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0028] [Carriage of the edge ring] FIG. 2 is a cross-sectional view showing an example of a ring assembly 112 including an edge ring and a lifting unit 50 according to an embodiment. FIG. 3 is a diagram for explaining problems at the time of replacing the edge ring according to a reference example.

[0029] A plurality of ring members including an edge ring are arranged in the plasma processing apparatus 1. As an example of the ring member, there are an edge ring (inner edge ring 112a, outer edge ring 112b) arranged on the outer side in the radial direction of the substrate W to enhance the in-plane uniformity of the plasma processing of the substrate W, a cover ring 113a, and the like. If the consumption of the ring member exceeds the allowable range, it needs to be replaced. For example, when the edge ring is consumed, the thickness of the sheath on the edge ring changes, the incident angle of ions on the substrate W changes, and the processing on the substrate W changes, so the ring member needs to be replaced. If the interval (chamber maintenance cycle) for replacing the ring member becomes short, the operating rate of the plasma processing apparatus 1 decreases, and the productivity of the plasma processing apparatus 1 decreases.

[0030] Therefore, by providing a lifting part 50 that enables automatic conveyance of the ring member, the ring member is replaced without opening the plasma processing chamber 10 to the atmosphere, thereby shortening the chamber maintenance cycle and improving the productivity of the plasma processing apparatus 1.

[0031] The ring assembly 112 has an edge ring, and the edge ring is divided into an inner edge ring 112a and an outer edge ring 112b. In the conveyance method according to one embodiment, an example will be described in which the inner edge ring 112a, which wears out faster than the outer edge ring 112b among the ring members, is conveyed by the lifting part 50 and replaced with a replacement inner edge ring 112a. The replacement inner edge ring 112a includes new ones and relatively new ones. The outer edge ring 112b is fixed and not the object to be conveyed by the lifting part 50. However, it is not limited to this, and the outer edge ring 112b may be the object to be conveyed, or both the inner edge ring 112a and the outer edge ring 112b may be the objects to be conveyed.

[0032] Regarding the edge ring 112A of the reference example, the problems in the case of performing replacement using the elevating part will be described with reference to FIG. 3. The edge ring 112A of the reference example has an inner edge ring 112c and an outer edge ring 112d. The inner edge ring 112c is conveyed, and the outer edge ring 112d is fixed. After the consumed inner edge ring 112c is carried out, as shown in FIG. 3(a), when placing the replacement inner edge ring 112c on the electrostatic chuck 1111, a part of it may cover the central region 111a (substrate support surface). In "A" of FIG. 3(a), an example is shown where the inner side of the inner edge ring 112c is caught by the central region 111a and the inner edge ring 112c cannot be placed on the annular region 111b (ring support surface). For example, when the difference between the inner diameter of the inner edge ring 112c and the diameter of the central region 111a is smaller than the conveyance accuracy (conveyance error) of the edge ring and the position of the central region 111a is higher than the position of the annular region 111b, the inner edge ring 112c may not be placed correctly.

[0033] Also, the inner edge ring 112c and the outer edge ring 112d are annular members divided in the radial direction, and the dividing surfaces are perpendicular. In this case, a gap perpendicular to the surface of the electrostatic chuck 1111 is formed between the inner edge ring 112c and the outer edge ring 112b. When ions enter from the gap, as shown in "B" of FIG. 3(b), the electrostatic chuck 1111 exposed from the gap is damaged, or the portion of the outer edge ring 112d close to the gap is consumed.

[0034] Therefore, when replacing the inner edge ring 112a by the elevating part 50, a structure of the edge ring is provided that can align the inner edge ring 112a and the outer edge ring 112b and appropriately place the inner edge ring 112a regardless of the conveyance accuracy. Also, a structure of the edge ring is provided that can avoid damage to the electrostatic chuck 1111 and wear of the outer edge ring 112d.

[0035] (Edge Ring) First, the structure of the edge ring according to the embodiment will be described with reference to FIG. 2. The ring assembly 112 has an edge ring divided into an inner edge ring 112a and an outer edge ring 112b. The ring assembly 112 further has a cover ring 113a and an insulating member 113b. The ring member includes the inner edge ring 112a, the outer edge ring 112b, the cover ring 113a, and the insulating member 113b.

[0036] The inner edge ring 112a is an annular member provided around the substrate W. The inner edge ring 112a may be formed of a conductive material, and one example includes Si and SiC. The inner edge ring 112a is disposed on the outer edge ring 112b. The outer edge ring 112b has an outer peripheral portion that is higher than the substrate W placed in the central region 111a and an inner peripheral portion that is lower than the height of the outer peripheral portion, and the inner edge ring 112a is disposed on the upper surface 12b2 of the inner peripheral portion.

[0037] The outer edge ring 112b is an annular member provided around the inner edge ring 112a. The outer edge ring 112b may be made of a conductive material, and one example includes Si, SiC, etc. The outer edge ring 112b is disposed in the annular region 111b. The inner edge ring 112a and the outer edge ring 112b may be formed of the same material. The inner edge ring 112a and the outer edge ring 112b may be formed of different materials.

[0038] In the example of FIG. 2, a cover ring 113a is disposed so as to cover the outer edge ring 112b. Further, an insulating member 113b that covers the outer peripheries of the electrostatic chuck 1111 and the base 1110 and supports the cover ring 113a at the upper part is disposed. The cover ring 113a and the insulating member 113b are annular members formed of a dielectric material. One example includes quartz (SiO2).

[0039] The outer edge ring 112b has a first alignment portion, and the inner edge ring 112a has a second alignment portion. The outer edge ring 112b has an outer peripheral surface that is substantially perpendicular and faces the side wall of the cover ring 113a. At least a part of the inner peripheral surface of the outer edge ring 112b is formed with a tapered surface that slopes downward inward. In the outer edge ring 112b of the present disclosure, a part of the inner peripheral surface is the tapered surface 12b1, and a part of the inner peripheral surface is a horizontal surface (upper surface 12b2). However, the present disclosure is not limited to this, and the entire inner peripheral surface of the outer edge ring 112b may be a tapered surface. The tapered surface 12b1 is an example of the first alignment portion.

[0040] The inner edge ring 112a has an inner peripheral surface (inner peripheral end) that is perpendicular and faces the side wall of the electrostatic chuck 1111. At least a part of the outer peripheral surface of the inner edge ring 112a is formed with a tapered surface that slopes downward inward. In the inner edge ring 112a of the present disclosure, the entire outer peripheral surface is the tapered surface 12a1. However, the present disclosure is not limited to this, and a part of the outer peripheral surface of the inner edge ring 112a may be a tapered surface. The tapered surface 12a1 is an example of the second alignment portion.

[0041] For convenience of explanation, the region corresponding to the tapered surface 12b1 of the outer edge ring 112b is defined as the intermediate portion, the outer peripheral side of the intermediate portion is the outer peripheral portion (the region corresponding to the upper surface 12b3), and the inner peripheral side of the intermediate portion is the inner peripheral portion (the region corresponding to the upper surface 12b2). The upper surface 12b2 of the inner peripheral portion serves as the mounting surface for the inner edge ring 112a. The inner edge ring 112a and the outer edge ring 112b are configured to align the inner edge ring 112a and the outer edge ring 112b by means of the tapered surface 12a1 and the tapered surface 12b1. As a result, regardless of the conveyance accuracy, the inner edge ring 112a is positioned at the correct position where the lower surface 12a2 of the inner edge ring 112a faces the upper surface 12b2 of the outer edge ring 112b.

[0042] The outer peripheral portion of the outer edge ring 112b is formed thicker in the height direction (vertical direction) than the intermediate portion and the inner peripheral portion. Therefore, the height of the upper surface 12b3 of the outer peripheral portion is higher than the height of the upper surface 12b2 of the inner peripheral portion. The tapered surface 12b1 is a surface connecting the height of the upper surface 12b3 of the outer peripheral portion and the height of the upper surface 12b2 of the inner peripheral portion, whereby the angle θ of the tapered surface 12b1 is defined.

[0043] When the inner edge ring 112a is placed on the outer edge ring 112b, the upper surface 12a3 of the inner edge ring 112a is at the same height as the upper surface of the substrate W and lower than the height of the upper surface 12b3 of the outer peripheral portion of the outer edge ring 112b. The angle of the tapered surface 12a1 of the inner edge ring 112a is (180° - θ) with respect to the angle θ of the tapered surface 12b1 of the outer edge ring 112b. The angle θ of the tapered surface 12b1 is 45° or more. Therefore, the angle of the tapered surface 12a1 is 135° or less. The angle θ of the tapered surface 12b1 is, for example, less than 90°, and any angle can be used as long as the inner edge ring 112a and the outer edge ring 112b can be positioned (aligned) by aligning the tapered surfaces 12a1 and 12b1. For example, 45° is preferable.

[0044] The tapered surface 12a1 of the inner edge ring 112a and the tapered surface 12b1 of the outer edge ring 112b have a tapered shape over the entire circumference in the circumferential direction. However, it is not limited to this, and the tapered surfaces 12a1 and 12b1 may be tapered in a part of the circumferential direction. However, at the position of the tapered surface 12a1 of the inner edge ring 112a, the outer edge ring 112b also has the tapered surface 12b1 and is configured to be alignable.

[0045] The inner diameter of the inner edge ring 112a is the same as that of the outer edge ring 112b, and the outer diameter of the inner edge ring 112a is smaller than that of the outer edge ring 112b. The inner edge ring 112a and the outer edge ring 112b overlap at least partially in a top view. In the example of FIG. 2, the outer edge ring 112b overlaps with the entire inner edge ring 112a in a top view, but it is not limited thereto, and it may overlap with a part of the inner edge ring 112a in a top view. That is, the outer edge ring 112b is provided around the inner edge ring 112a, and in a top view, it is sufficient that at least the outer peripheral portion of the inner edge ring 112a and the inner peripheral portion of the outer edge ring 112b overlap.

[0046] When the elevating part 50 replaces the inner edge ring 112a, the worn inner edge ring 112a is carried out, and the replacement inner edge ring 112a is placed on the outer edge ring 112b. At this time, since the inner edge ring 112a and the outer edge ring 112b have a tapered structure, horizontal alignment can be performed. For this reason, the deviation caused by the conveyance of the inner edge ring 112a can be eliminated, and the replacement inner edge ring 112a can be placed at the correct position. Thereby, regardless of the conveyance accuracy of the conveyance arm AM (see FIGS. 5 and 6 described later), the tapered surface 12a1 of the inner edge ring 112a is guided by the tapered surface 12b1 of the outer edge ring 112b. Thereby, the alignment of the central axis of the inner edge ring 112a and the central axis of the outer edge ring 112b can be performed.

[0047] Further, the incident angle of the ions is substantially perpendicular to the substrate W. Similarly, the ions are also incident substantially perpendicularly to the ring assembly 112 disposed on the outer peripheral side of the substrate W. In the reference example shown in FIG. 3, the outer peripheral surface of the inner edge ring 112c and the inner peripheral surface of the outer edge ring 112d are perpendicular, and a perpendicular gap is formed between the outer peripheral surface of the inner edge ring 112c and the inner peripheral surface of the outer edge ring 112d. Therefore, there is a risk that ions pass through this perpendicular gap and damage the electrostatic chuck 1111. On the other hand, in the configuration shown in FIG. 2, the gap formed by the tapered surface 12a1 of the inner edge ring 112a and the tapered surface 12b1 of the outer edge ring 112b has an angle θ. For this reason, the tapered surface 12a1 and the tapered surface 12b1 face each other, and the structure is such that it is difficult for ions to enter the gap. Further, the electrostatic chuck 1111 is not exposed from the gap between the inner edge ring 112a and the outer edge ring 112b that are divided. Thereby, it is possible to suppress ions from entering through the gap between the tapered surface 12a1 and the tapered surface 12b1, and prevent the electrostatic chuck 1111 from being damaged or the outer edge ring 112b from being worn out. Thereby, while automatically replacing the inner edge ring 112a for replacement without opening to the atmosphere, the outer edge ring 112b and the electrostatic chuck 1111 can be extended in life.

[0048] (Lifting part) Next, the configuration of the lifting part 50 will be described with reference to FIG. 2. The plasma processing apparatus according to the embodiment has a lifting part 50 for transporting an edge ring placed on the electrostatic chuck 1111. In the present embodiment, an example in which the lifting part 50 transports the inner edge ring 112a will be described.

[0049] The lifting part 50 has a lifter 54. The lifter 54 is configured to move at least one of the inner edge ring 112a and the outer edge ring 112b up and down. In the present disclosure, the lifter 54 is configured to move the inner edge ring 112a up and down. The lifter 54 has a pin 51 and an actuator 53 that moves the pin 51 up and down.

[0050] When the inner edge ring 112a and the outer edge ring 112b are placed, the inner edge ring 112a covers the inner peripheral part and the middle part of the outer edge ring 112b from above. For this reason, the inner peripheral part and the middle part of the outer edge ring 112b are not exposed to the plasma processing space. Further, a through hole 12b4 penetrating the outer edge ring 112b in the vertical direction (thickness direction) is formed in the inner peripheral part of the outer edge ring 112b.

[0051] In the annular region 111b of the electrostatic chuck 1111, a through hole 63 penetrating the electrostatic chuck 1111 in the vertical direction is formed at a position communicating with the through hole 12b4. Further, in the base 1110, a through hole 64 penetrating the base 1110 in the vertical direction is formed at a position communicating with the through hole 63.

[0052] The pin 51 is accommodated in the through hole 63 and the through hole 64 and is connected to the actuator 53 below. Hereinafter, the lower end portion of the pin 51 connected to the actuator 53 is referred to as the base end, and the upper end portion is referred to as the tip. The sealing portion 52 is disposed in the through hole 64 and enables the vertical movement of the pin 51 while sealing the vacuum space on the tip side from the atmospheric space on the base end side. The pin 51 extends downward through the sealing portion 52. The sealing portion 52 is, for example, a shaft seal, a bellows, or the like. The actuator 53 drives the pin 51 to be movable up and down. The type of the actuator 53 is not particularly limited. The actuator 53 is, for example, a piezo actuator, a motor, or the like.

[0053] Pin 51 has a first holding portion 51a, a second holding portion 51b, and a protruding portion 51c. The first holding portion 51a has a predetermined length from the tip of the pin 51 to the protruding portion 51c. The first holding portion 51a has a cross-section that fits into the through-hole 12b4 with a predetermined clearance. The second holding portion 51b is axially connected to the proximal end side of the first holding portion 51a. At the position where the second holding portion 51b and the first holding portion 51a are connected, a protruding portion 51c that protrudes outward from the first holding portion 51a is formed. The cross-section of the second holding portion 51b at the position where the protruding portion 51c is formed has a size or shape that does not fit into the through-hole 12b4. That is, when the pin 51 is inserted into the through-hole 12b4 from the lower surface side of the outer edge ring 112b, the first holding portion 51a passes through the through-hole 12b4 and can move up and down so as to protrude from the upper surface 12b2 of the outer edge ring 112b. Then, the pin 51 can be raised until the protruding portion 51c abuts against the lower surface of the outer edge ring 112b. The second holding portion 51b is configured to be stopped at the entrance of the through-hole 12b4 by the protruding portion 51c and support the outer edge ring 112b from the lower surface. Thereby, only the inner edge ring 112a can be raised and replaced by the pin 51. Note that when the outer edge ring 112b is not fixed and the outer edge ring 112b is conveyed together with the inner edge ring 112a, the second holding portion 51b supports the outer edge ring 112b from the lower surface by the protruding portion 51c. In this state, the inner edge ring 112a and the outer edge ring 112b are raised and replaced by the pin 51.

[0054] The specific shapes of the first holding portion 51a, the second holding portion 51b, and the protruding portion 51c are not particularly limited. For example, the first holding portion 51a and the second holding portion 51b may be coaxial rod-shaped members. When the first holding portion 51a and the second holding portion 51b are cylindrical, the diameter of the first holding portion 51a is smaller than the diameter of the second holding portion 51b. The protruding portion 51c protrudes in the circumferential direction to the same length as the diameter of the second holding portion 51b. The inner diameter of the through-hole 12b4 is larger than the diameter of the first holding portion 51a and smaller than the diameter of the second holding portion 51b.

[0055] The first holding part 51a and the second holding part 51b may have a polygonal cross-section. Also, the cross-sectional area of the first holding part 51a does not necessarily have to be smaller than that of the second holding part 51b. It is sufficient that at least a protruding part 51c protruding outward is formed on the tip side of the second holding part 51b. Such a structure will be described later (see FIG. 11 etc.).

[0056] Three or more pins 51 are provided in the circumferential direction. Note that there may also be a structure in which the through-hole 12b4 is not provided in the outer edge ring 112b and the pin 51 does not penetrate the outer edge ring 112b. Such a structure will be described later (see FIGS. 7, 10 etc.).

[0057] (Bipolar electrostatic chuck) The electrostatic chuck 1111 has an electrostatic chuck 1111c for the outer edge ring disposed at a position facing the outer edge ring 112b. The electrostatic chuck 1111 may also have an electrostatic chuck 1111d for the inner edge ring (see FIG. 9) disposed at a position facing the inner edge ring 112a. The electrostatic chuck 1111c for the outer edge ring is a bipolar electrostatic chuck and has an inner peripheral electrode 114a and an outer peripheral electrode 114b as the first electrostatic electrodes 114. The inner peripheral electrode 114a and the outer peripheral electrode 114b are disposed inside the ceramic member 1111a (FIG. 1) of the electrostatic chuck 1111c for the outer edge ring. The inner peripheral electrode 114a and the outer peripheral electrode 114b may be a metal plate or a metal mesh.

[0058] The electrostatic chuck 1111c for the outer edge ring can adsorb and hold the outer edge ring 112b formed of Si or SiC due to the potential difference between the inner peripheral electrode 114a and the outer peripheral electrode 114b. The inner peripheral electrode 114a and the outer peripheral electrode 114b are provided at the position of the electrostatic chuck 1111c for the outer edge ring that overlaps the outer edge ring 112b in top view. In the present disclosure, the inner peripheral electrode 114a and the outer peripheral electrode 114b are provided at positions corresponding to the outer peripheral portion and the intermediate portion of the outer edge ring 112b, but are not limited thereto, and may be provided at positions corresponding to the inner peripheral portion. The electrostatic chuck 1111c for the outer edge ring of the present disclosure is not limited to a bipolar electrostatic chuck, and may be a unipolar electrostatic chuck. In the case of a unipolar type, the outer edge ring 112b can be adsorbed and held by the potential difference between the plasma and the first electrostatic electrode 114.

[0059] The inner peripheral electrode 114a is annularly arranged at the intermediate portion of the outer edge ring 112b on the inner peripheral side of the outer peripheral electrode 114b, and the outer peripheral electrode 114b is annularly arranged at the outer peripheral portion of the outer edge ring 112b. The inner peripheral electrode 114a is electrically connected to the DC power supply 33a via the switch 29a. A positive voltage or a negative voltage for adsorbing the outer edge ring 112b to the electrostatic chuck 1111 is selectively applied to the inner peripheral electrode 114a from the DC power supply 33a via the switch 29a. The switching of the polarity of the voltage applied from the DC power supply 33a to the inner peripheral electrode 114a is performed by the control device 2 (FIG. 1). The DC power supply 33a is an example of the third DC generation unit 33.

[0060] The outer peripheral electrode 114b is electrically connected to the DC power supply 33b via the switch 29b. A positive voltage or a negative voltage for adsorbing the outer edge ring 112b to the electrostatic chuck 1111 is selectively applied to the outer peripheral electrode 114b from the DC power supply 33b via the switch 29b. The switching of the polarity of the voltage applied from the DC power supply 33b to the outer peripheral electrode 114b is performed by the control device 2. The DC power supply 33b is an example of the third DC generation unit 33. The inner peripheral electrode 114a and the outer peripheral electrode 114b may be applied with an AC voltage as well as a DC voltage.

[0061] [Conveying method] Next, with reference to FIGS. 2, 4, and 5(a) to (e), the conveyance (unloading) of the worn inner edge ring 112a by the elevating unit 50 will be described. Further, with reference to FIGS. 2, 4, and 6(a) to (e), the conveyance (loading) of the replacement inner edge ring 112a by the elevating unit 50 will be described. FIG. 4 is a flowchart showing an example of the conveying method according to the embodiment. FIG. 5 is a diagram for explaining the conveying method according to the embodiment. FIG. 6 is a diagram for explaining the conveying method (continuation of FIG. 5) according to the embodiment. FIGS. 5(e) and 6(a) are the same figure.

[0062] FIG. 5(a) shows a simplified view of the same state as FIG. 2. As shown in FIG. 5(a), the pin 51 is housed in the through holes 63 and 64 except when the edge ring is being conveyed. In the example of FIG. 5(a), the tip of the pin 51 is inserted into the through hole 12b4 of the outer edge ring 112b, but the tip of the pin 51 may be housed below the outer edge ring 112b.

[0063] The conveyance of the inner edge ring 112a is performed after the substrate W is unloaded. The conveying method of the present disclosure is controlled by the control device 2. The conveying method according to the present embodiment includes not only the method of aligning the edge ring but also the method of aligning ring members such as cover rings.

[0064] When the conveying method of the present disclosure is started, the control device 2 controls the heat transfer gas supply unit to stop the supply of He gas from the gas supply path 116 between the back surface of the outer edge ring 112b and the electrostatic chuck 1111 (annular region 111b) (step S1).

[0065] Next, the control device 2 controls the switch 29a or the switch 29b to select and apply a DC voltage that generates a potential difference between the inner peripheral electrode 114a, which is the first electrostatic electrode, and the outer peripheral electrode 114b (step S3). For example, when a DC voltage of 2500 V is applied to the inner peripheral electrode 114a and a DC voltage of 2500 V is applied to the outer peripheral electrode 114b during the processing of the substrate W, the DC voltage applied from the DC power supply 33a to the inner peripheral electrode 114a remains unchanged. On the other hand, for the outer peripheral electrode 114b, the switch 29b is switched to change the polarity of the DC voltage applied from the DC power supply 33b to the outer peripheral electrode 114b, and for example, it is controlled to apply a DC voltage of -2500 V. Thereby, by generating a potential difference between the inner peripheral electrode 114a and the outer peripheral electrode 114b, the outer edge ring 112b is adsorbed to the electrostatic chuck 1111.

[0066] With the outer edge ring 112b fixed to the electrostatic chuck 1111 in this way, the control device 2 controls the actuator 53 to drive the pin 51. When the pin 51 rises, the first holding portion 51a penetrates the through hole 12b4 of the outer edge ring 112b and abuts against the lower surface of the inner edge ring 112a to lift the inner edge ring upward (step S5). FIG. 5(b) shows an example of a state in which the inner edge ring 112a is lifted by the elevating portion 50 according to the embodiment.

[0067] Returning to FIG. 4, next, the control device 2 causes a robot arm for conveyance (hereinafter referred to as "conveyance arm AM") to enter the plasma processing chamber 10 (step S7). FIG. 5(c) is a diagram showing an example of a state immediately before placing the inner edge ring 112a lifted by the elevating portion 50 on the conveyance arm AM. At this time, after the pin 51 lifts the inner edge ring 112a, the control device 2 causes the conveyance arm AM to enter from outside the plasma processing chamber 10 above the substrate support portion 11. The conveyance arm AM moves horizontally at a height lower than the height of the tip of the pin 51.

[0068] Returning to FIG. 4, when the transfer arm AM is disposed below the inner edge ring 112a lifted by the pin 51, the control device 2 controls the actuator 53 to lower the pin 51 (step S9). FIG. 5(d) shows an example of a state in which the inner edge ring 112a lifted by the elevating unit 50 is placed on the transfer arm AM. As the pin 51 descends, the inner edge ring 112a held on the pin 51 is placed on the transfer arm AM. After the inner edge ring 112a is placed on the transfer arm AM, the pin 51 continues to descend downward as it is.

[0069] Returning to FIG. 4, next, when the pin 51 is received in the through holes 63 and 64, the control device 2 moves the transfer arm AM on which the inner edge ring 112a is placed out of the plasma processing chamber 10 (step S11). FIG. 5(e) shows an example of a state when the transfer of the inner edge ring 112a by the elevating unit 50 is completed. The transfer arm AM carries the inner edge ring 112a out of the plasma processing chamber 10, and the pin 51 retracts to the position before the start of transfer, and the transfer of the inner edge ring 112a is completed.

[0070] Returning to FIG. 4, next, the control device 2 uses the transfer arm to take out the replacement inner edge ring 112a from the storage container and transfers the replacement inner edge ring 112a to the plasma processing chamber 10 without opening to the atmosphere (step S13). The storage container will be described later. The transfer arm for transferring the replacement inner edge ring 112a may be the transfer arm AM, or a plurality of transfer arms including the transfer arm AM may be coordinated to transfer.

[0071] Next, the control device 2 causes the transfer arm AM on which the replacement inner edge ring 112a is placed to enter the plasma processing chamber 10 (step S15). FIG. 6(b) shows an example of a state in which the transfer arm AM on which the replacement inner edge ring 112a is placed enters the plasma processing chamber 10.

[0072] Returning to FIG. 4, next, the control device 2 controls the actuator 53 to raise the pin 51 (step S17). FIG. 6(c) shows an example of a state in which the replacement inner edge ring 112a placed on the transfer arm AM is lifted by the pin 51. When the pin 51 rises, the replacement inner edge ring 112a placed on the transfer arm AM is lifted and held by the pin 51.

[0073] Returning to FIG. 4, after the inner edge ring 112a is held on the pin 51, the transfer arm AM moves outside the plasma processing chamber 10 (step S19). FIG. 6(d) shows an example of a state in which the replacement inner edge ring 112a is lifted by the pin 51 and the transfer arm AM has retracted.

[0074] Returning to FIG. 4, next, the control device 2 controls the actuator 53 to lower the pin 51 on which the replacement inner edge ring 112a is placed (step S21). At this time, the pin 51 on which the inner edge ring 112a is placed descends with the outer edge ring 112b electrostatically adsorbed to the electrostatic chuck 1111c for the outer edge ring. FIGS. 6(d) and (e) show an example of a state in which the replacement inner edge ring 112a lifted by the pin 51 is placed on the electrostatically adsorbed outer edge ring 112b. When the pin 51 descends, the inner edge ring 112a held on the pin 51 is aligned with and placed on the outer edge ring 112b (step S23). After the inner edge ring 112a is placed, the pin 51 continues to descend as it is. Thereby, this process ends. Note that the control device 2 controls the heat transfer gas supply unit to start supplying He gas from the gas supply path 116 between the back surface of the outer edge ring 112b and the electrostatic chuck 1111 (annular region 111b), and executes the process of the substrate W.

[0075] When replacing the inner edge ring 112a for replacement, the inner edge ring 112a and the outer edge ring 112b are aligned by the tapered surface 12a1 of the inner edge ring 112a and the tapered surface 12b1 of the outer edge ring 112b. Thereby, regardless of the conveyance accuracy by the elevating part 50, the inner edge ring 112a for replacement is accurately positioned and placed so that the lower surface 12a2 of the inner edge ring 112a for replacement faces the upper surface 12b2 of the outer edge ring 112b. Also, when replacing the inner edge ring 112a for replacement, the outer edge ring 112b is fixed to the electrostatic chuck 1111c for the outer edge ring. Thereby, the alignment accuracy can be improved. The inner edge ring 112a may be lowered with the outer edge ring 112b not electrostatically adsorbed. However, when the inner edge ring 112a is lowered with the outer edge ring 112b electrostatically adsorbed, the outer side of the inner edge ring 112a is fixed, so that the placement accuracy of the inner inner edge ring 112a can be further improved. For example, the process of step S3 is not necessarily limited to being performed between steps S1 and S5 of FIG. 4. The process of step S3 may be performed until the pin 51 is lowered in step S21 and the inner edge ring 112a is placed on the outer edge ring 112b in step S23. That is, the process of step S3 may be performed until the process of step S23 is executed.

[0076] In this way, when automatically replacing the inner edge ring 112a using the elevating part 50, the inner edge ring 112a for replacement can be placed in the correct position by aligning the tapered surface 12a1 with the tapered surface 12b1. Thereby, conveyance errors can be suppressed.

[0077] In addition, due to the tapered surfaces 12a1 and 12b1, it is difficult for ions to enter the gap between the inner edge ring 112a and the outer edge ring 112b. Also, the electrostatic chuck 1111 is not exposed from the gap between the inner edge ring 112a and the outer edge ring 112b. Thereby, it is possible to suppress ions from entering through the gap and damaging the electrostatic chuck 1111 or wearing out the outer edge ring 112b. As a result, while automatically replacing the inner edge ring 112a for replacement without exposing it to the atmosphere, the outer edge ring 112b and the electrostatic chuck 1111 can be extended in life.

[0078] As described above, an example of automatically replacing the inner edge ring 112a using the elevating unit 50 has been given, but it is not limited to this. For example, as shown in FIGS. 7 and 8, the outer edge ring 112b may be lifted by a lifter 54 and automatically transported. In FIG. 7, the outer edge ring 112b is lifted and automatically transported simultaneously with the inner edge ring 112a. The objects to be transported in FIGS. 7(a) to (e) are the outer edge ring 112b and the inner edge ring 112a, which are different from the inner edge ring 112a that is the object to be transported in FIGS. 6(a) to (e). Also, in this example, since the outer edge ring 112b or the inner edge ring 112a is not penetrated, the pin 51 may have the same thickness from the base end to the tip end. However, even in this case, the tip of the pin 51 may have a shape that is thinner than the base end. Since the loading operations in FIGS. 7(a) to (e) correspond to the loading operations in FIGS. 6(a) to (e), the description thereof is omitted. Also in this case, the inner edge ring 112a and the outer edge ring 112b are positioned by the tapered surfaces 12a1, 12b1 (see FIG. 2). Note that the unloading operations of the outer edge ring 112b and the inner edge ring 112a performed before the loading operation in FIG. 7 are operations from FIG. 7(e) to FIG. 7(a), and the description thereof is omitted.

[0079] Similarly, in FIG. 8, only the outer edge ring 112b is lifted and automatically conveyed. The objects to be conveyed in FIGS. 8(a) to (e) are the outer edge ring 112b, which is different from the inner edge ring 112a that is the object to be conveyed in FIGS. 6(a) to (e). On the other hand, since the loading operations in FIGS. 8(a) to (e) correspond to the loading operations in FIGS. 6(a) to (e), the description thereof is omitted. Also in this case, the inner edge ring 112a and the outer edge ring 112b are positioned by the tapered surfaces 12a10 and 12b10 shown in FIG. 8. Note that the unloading operation of the outer edge ring 112b performed before the loading operation in FIG. 8 is the operation from FIG. 8(e) to FIG. 8(a), and the description thereof is omitted. Although not shown, the inner edge ring 112a in FIG. 8 may be fixed by a bipolar electrostatic chuck.

[0080] [Modification Example] Modification examples 1 to 4 of the edge ring and its peripheral structure described above will be described with reference to FIG. 9. FIG. 9 is a diagram showing modification examples 1 to 4 of the edge ring and its peripheral structure according to the embodiment. The edge rings of modification examples 1 to 4 shown in FIGS. 9(a) to (d) are also divided into an inner edge ring 112a and an outer edge ring 112b. Also, at least a part of the inner edge ring 112a and the outer edge ring 112b overlap in a top view. Although not shown, the inner edge ring 112a in FIG. 9(b) may be fixed by a bipolar electrostatic chuck.

[0081] FIG. 9(a) shows Modification Example 1 of the edge ring of the present disclosure. Modification Example 1 shows an edge ring with a tapered structure having two tapered surfaces on the surfaces where the inner edge ring 112a and the outer edge ring 112b face each other. The tapered surface 12a1 of the inner edge ring 112a faces the tapered surface 12b1 of the outer edge ring 112b, and the tapered surface 12a5 of the inner edge ring 112a faces the tapered surface 12b5 of the outer edge ring 112b. The tapered surface 12b1 and the tapered surface 12b5 of the outer edge ring 112b are an example of the first alignment portion. The tapered surface 12a1 and the tapered surface 12a5 of the inner edge ring 112a are an example of the second alignment portion. The alignment of the inner edge ring 112a and the outer edge ring 112b is performed by the tapered surface 12a1 and the tapered surface 12a5 of the inner edge ring 112a and the tapered surface 12b1 and the tapered surface 12b5 of the outer edge ring 112b.

[0082] In Modification Example 1, a part of the outer edge ring 112b and the inner edge ring 112a is placed on the annular region 111b. Also, in Modification Example 1, backside gas is supplied from a heat transfer gas supply unit having a gas supply path 116a and a gas supply path 116b. A groove 201b of 50 μm to several hundred μm is formed annularly on the back surface of the outer edge ring 112b corresponding to the gas supply path 116b.

[0083] The electrostatic chuck 1111 has an electrostatic chuck 1111c for the outer edge ring disposed at a position facing the outer edge ring 112b and an electrostatic chuck 1111d for the inner edge ring disposed at a position facing the inner edge ring 112a. The electrostatic chuck 1111c for the outer edge ring is a bipolar electrostatic chuck and has an inner peripheral electrode 114a and an outer peripheral electrode 114b as the first electrostatic electrodes 114. The inner peripheral electrode 114a and the outer peripheral electrode 114b are disposed within the ceramic member 1111a (FIG. 1) of the electrostatic chuck 1111c for the outer edge ring. The electrostatic chuck 1111d for the inner edge ring is a unipolar electrostatic chuck and has a second electrostatic electrode 118. The second electrostatic electrode 118, the inner peripheral electrode 114a, and the outer peripheral electrode 114b may be a metal plate or a metal mesh.

[0084] The inner peripheral electrode 114a is electrically connected to a DC power supply 33a via a switch 29a. The outer peripheral electrode 114b is electrically connected to a DC power supply 33b via a switch 29b. A DC voltage is applied to the inner peripheral electrode 114a and the outer peripheral electrode 114b from the DC power supplies 33a and 33b. The second electrostatic electrode 118 is electrically connected to a DC power supply 33c via a switch 29c. A DC voltage is applied to the second electrostatic electrode 118 from the DC power supply 33c.

[0085] The electrostatic chuck 1111c for the edge ring and the electrostatic chuck 1111d for the inner edge ring may be bipolar electrostatic chucks or unipolar electrostatic chucks. By applying a specific DC voltage from the DC power supply 33a to the inner peripheral electrode 114a and the outer peripheral electrode 114b via the switches 29a and 29b, the outer edge ring 112b can be attracted to the electrostatic chuck 1111c. Also, by applying a specific DC voltage from the DC power supply 33c to the second electrostatic electrode 118 via the switch 29c, the inner edge ring 112a can be attracted to the electrostatic chuck 1111d. The DC power supplies 33a, 33b, and 33c are an example of a third DC generation unit 33.

[0086] Figure 9(b) shows Modification Example 2 of the edge ring of the present disclosure. Modification Example 2 shows an edge ring with a tapered structure having one tapered surface on the surface where the inner edge ring 112a and the outer edge ring 112b face each other. The tapered surface 12a1 of the inner edge ring 112a faces the tapered surface 12b1 of the outer edge ring 112b. The tapered surface 12b1 of the outer edge ring 112b is an example of the first alignment portion. The tapered surface 12a1 of the inner edge ring 112a is an example of the second alignment portion. The inner edge ring 112a and the outer edge ring 112b are aligned by the tapered surface 12a1 of the inner edge ring 112a and the tapered surface 12b1 of the outer edge ring 112b.

[0087] In Modification Example 2, the outer edge ring 112b and the inner edge ring 112a are placed on the annular region 111b. The configurations and functions of the first electrostatic electrode 114 and the second electrostatic electrode 118 are the same as those in Modification Example 1.

[0088] In Modification Example 2, there is no through hole in the outer edge ring 112b through which the pin 51 is inserted. The pin 51 is configured to directly lift the lower surface of the inner edge ring 112a placed on the annular region 111b. Therefore, in Modification Example 2, it is not necessary to form the stepped structure of the pin 51 as shown in Fig. 9(a), and the pin 51 has the same thickness from the base end to the tip end. However, a stepped pin 51 may also be used in Modification Example 2. Similarly, for the pin 51 in Figs. 9(c) and 9(d), a stepped pin 51 may also be used.

[0089] FIG. 9(c) shows Modification Example 3 of the edge ring of the present disclosure. Modification Example 3 shows an edge ring with a tapered structure having one tapered surface on the surface where the inner edge ring 112a and the outer edge ring 112b face each other. The tapered surface 12a5 of the inner edge ring 112a faces the tapered surface 12b5 of the outer edge ring 112b. The tapered surface 12b5 of the outer edge ring 112b is an example of a first alignment portion. The tapered surface 12a5 of the inner edge ring 112a is an example of a second alignment portion. The inner edge ring 112a and the outer edge ring 112b are aligned by the tapered surface 12a5 of the inner edge ring 112a and the tapered surface 12b5 of the outer edge ring 112b.

[0090] In Modification Example 3, a part of the outer edge ring 112b and the inner edge ring 112a is placed on the annular region 111b. The configurations and functions of the first electrostatic electrode 114 and the second electrostatic electrode 118 are the same as those in Modification Example 1.

[0091] In Modification Example 3, there is no through hole through which the pin 51 is inserted in the outer edge ring 112b. The pin 51 is configured to directly lift the lower surface of the outer edge ring 112b placed on the annular region 111b. Thereby, in Modification Example 3, both the outer edge ring 112b and the inner edge ring 112a can be transported.

[0092] FIG. 9(d) shows Modification 4 of the edge ring of the present disclosure. In Modification 4, there is no tapered surface on the surfaces where the inner edge ring 112a and the outer edge ring 112b face each other. The horizontal surface 12a6 of the inner edge ring 112a faces the horizontal surface 12b6 of the outer edge ring 112b. An annular recess 12a7 is formed in the horizontal surface 12a6. However, the recess 12a7 is not limited to being provided over the entire circumference in the circumferential direction, and may be provided at least partially. A protrusion 12b7 is formed on the horizontal surface 12b6 at a position corresponding to the recess 12a7. When the recess 12a7 is provided over the entire circumference in the circumferential direction, the protrusion 12b7 is also provided over the entire circumference in the circumferential direction. When the recess 12a7 is provided partially in the circumferential direction, the protrusion 12b7 is also provided at a position corresponding to the circumferential recess 12a7. Note that the pin 51 is arranged at a position different from the circumferential protrusion 12b7. Or, the pin 51 may be radially inside or outside the protrusion 12b7.

[0093] The protrusion 12b7 of the outer edge ring 112b is an example of a first alignment portion. The recess 12a7 of the inner edge ring 112a is an example of a second alignment portion. The inner edge ring 112a and the outer edge ring 112b are aligned by the recess 12a7 of the inner edge ring 112a and the protrusion 12b7 of the outer edge ring 112b. Note that the inner edge ring 112a may have a protrusion, and the corresponding position of the outer edge ring 112b may have a recess.

[0094] The alignment portion may have both a tapered surface and unevenness. Also, the alignment portion may be formed only on the outer edge ring 112b. For example, a recess or a protrusion (not shown) may be formed on the lower surface of the outer edge ring 112b. Then, a protrusion or a recess may be formed at a position corresponding to the outer edge ring 112b of the electrostatic chuck 1111 (annular region 111b) so as to engage with the recess or the protrusion formed on the outer edge ring 112b. Also by this, when replacing the outer edge ring 112b, the outer edge ring 112b can be automatically aligned with the electrostatic chuck 1111 by matching the unevenness between the outer edge ring 112b and the electrostatic chuck 1111.

[0095] In Modifications 1 to 4 shown in FIGS. 9(a) to 9(d), the thickness of the thickest part of the inner edge ring 112a is greater compared to the inner edge ring 112a in FIG. 2. The inner peripheral side wall of the inner edge ring 112a and the inner peripheral part of the outer edge ring 112b (the part where the inner edge ring 112a in FIG. 2 is placed) are particularly likely to be consumed by plasma. Therefore, in Modifications 1 to 4, the thickness of the inner edge ring 112a and / or the thickness of the inner peripheral part of the outer edge ring 112b is increased. Thereby, the replacement interval of the inner edge ring 112a can be extended and the outer edge ring 112b can be made to last longer.

[0096] In Modifications 1 to 4 shown in FIGS. 9(a) to 9(d), the electrostatic chuck 1111 has an electrostatic chuck 1111c for the outer edge ring disposed at a position facing the outer edge ring 112b of the substrate support part 11. The electrostatic chuck 1111c for the outer edge ring is a bipolar electrostatic chuck and has an inner peripheral electrode 114a and an outer peripheral electrode 114b as the first electrostatic electrodes 114. The inner peripheral electrode 114a and the outer peripheral electrode 114b are disposed within the ceramic member 1111a of the electrostatic chuck 1111c. The inner peripheral electrode 114a and the outer peripheral electrode 114b may be a metal plate or a metal mesh. In addition, the electrostatic chuck 1111 is disposed at a position facing the inner edge ring 112a of the substrate support part 11 and has an electrostatic chuck 1111d for the inner edge ring. The electrostatic chuck 1111d for the inner edge ring is a unipolar electrostatic chuck and has a second electrostatic electrode 118. However, the electrostatic chuck 1111d for the inner edge ring may have an inner peripheral electrode and an outer peripheral electrode instead of the second electrostatic electrode 118 as a bipolar electrostatic chuck. The second electrostatic electrode 118 is disposed within the ceramic member of the electrostatic chuck 1111d. The second electrostatic electrode 118 may be a metal plate or a metal mesh.

[0097] Examples 5 to 6 of the deformation of the edge ring and its peripheral structure will be described with reference to FIG. 10. FIG. 10 is a diagram showing Examples 5 to 6 of the deformation of the edge ring and its peripheral structure according to the embodiment. The edge rings of Examples 5 to 6 shown in FIGS. 10(a) to 10(b) are also divided into an inner edge ring 112a and an outer edge ring 112b. Further, at least a part of the inner edge ring 112a and the outer edge ring 112b overlap in a top view.

[0098] FIG. 10(a) shows Example 5 of the deformation of the edge ring of the present disclosure. In Example 5, the inner peripheral surface 113a1 (the surface facing the outer edge ring 112b) of the cover ring 113a and the outer peripheral surface 12b8 of the outer edge ring 112b are both tapered surfaces that become lower toward the inside, and are structured to be positioned by the tapered surfaces. And in FIG. 10(a), the outer edge ring 112b and the inner edge ring 112a are configured to be transportable by pins 51. The cover ring 113a may also be configured to be transportable by pins 51.

[0099] FIG. 10(b) shows Example 6 of the deformation of the edge ring of the present disclosure. In Example 6, the inner peripheral surface 113a1 of the cover ring 113a and the outer peripheral surface 12b8 of the outer edge ring 112b are both vertical surfaces and are not structured for positioning. In FIG. 10(b), a convex portion 111b1 is formed in the annular region 111b of the electrostatic chuck 1111, and a concave portion 12b9 is formed at a position corresponding to the position of the convex portion 111b1 on the back surface of the outer edge ring 112b. The concave portion 12b9 is a recess corresponding to the shape of the convex portion 111b1, and the convex portion 111b1 fits into the concave portion 12b9 and is structured to be positioned. Similar to FIG. 9(d), the unevenness is not limited to being provided over the entire circumference in the circumferential direction, and may be provided at least partially. Also, the number of the convex portions 111b1 and the concave portions 12b9 is not limited to one in the radial direction and may be plural. The number of the unevenness in FIG. 9(d) is also not limited to one in the radial direction and may be plural.

[0100] An example of the positioning structure by the pin 51 will be described with reference to FIG. 11. FIG. 11 is a diagram showing an example of the positioning structure by the pin 51 according to the embodiment. The pin 51 has a first holding portion 51a, a second holding portion 51b, and a protruding portion 51c. The first holding portion 51a has a predetermined length from the tip of the pin 51 to the protruding portion 51c. The second holding portion 51b is axially connected to the base end side of the first holding portion 51a. At the position where the second holding portion 51b and the first holding portion 51a are connected, a protruding portion 51c that protrudes obliquely downward from the outside of the first holding portion 51a is formed. The protruding portion 51c may have, for example, an angle of 60° between the horizontal plane perpendicular to the axis of the pin 51 and the tapered surface of the protruding portion 51c. However, this angle is not limited to 60° and may be less than 90°.

[0101] As shown in FIG. 11(a), the shape of the opening on the lower surface side of the through hole 12b4 formed in the outer edge ring 112b and through which the pin 51 passes is a tapered surface 12b41 corresponding to the tapered surface of the protruding portion 51c. Thereby, when the first holding portion 5la is inserted into the through hole 12b4, the protruding portion 51c is accommodated in the space in the through hole 12b4 formed by the tapered surface 12b41 and is positioned.

[0102] [Transport from the storage container] Next, an example of a method for transporting the edge ring from the storage container when replacing the edge ring will be described with reference to FIG. 12. FIG. 12 is a diagram showing an example of the substrate processing system 400 according to the embodiment. In the substrate processing system 400, plasma processing such as etching, film formation, and diffusion is performed on the substrate W.

[0103] The substrate processing system 400 has an atmospheric section 410 and a reduced-pressure section 411, and the atmospheric section 410 and the reduced-pressure section 411 are integrally connected via load lock modules 420 and 421. The atmospheric section 410 includes an atmospheric module that performs a desired process on the substrate W in an atmospheric pressure atmosphere. The reduced-pressure section 411 includes a reduced-pressure module that performs a desired process on the substrate W in a reduced-pressure atmosphere.

[0104] The load lock modules 420 and 421 are provided to connect the loader module 430 in the atmosphere section 410 and the transfer module 450 in the reduced pressure section 411 via a gate valve (not shown). The load lock modules 420 and 421 are configured to be able to switch the inside between an atmospheric pressure atmosphere and a reduced pressure atmosphere (vacuum state).

[0105] The atmosphere section 410 has a loader module 430 provided with a transfer device 440 and a load port 432 on which a plurality of hoops 431a are placed. The hoop 431a can store a plurality of substrates W. A hoop 431b capable of storing a plurality of edge rings may be placed. Note that the loader module 430 may be provided with an orienter module (not shown) for adjusting the horizontal orientation of the substrate W and the edge ring.

[0106] The inside of the loader module 430 is formed of a rectangular housing, and the inside of the housing is maintained at an atmospheric pressure atmosphere. On one side surface constituting the long side of the housing of the loader module 430, a plurality of, for example, five load ports 432 are arranged in parallel. On the other side surface constituting the long side of the housing of the loader module 430, the load lock modules 420 and 421 are arranged in parallel.

[0107] Inside the loader module 430, a transfer device 440 for transferring the substrate W and the edge ring is provided. The transfer device 440 has a transfer arm 441 that supports and moves the substrate W and the edge ring, a turntable 442 that rotatably supports the transfer arm 441, and a base 443 on which the turntable 442 is mounted. Further, inside the loader module 430, a guide rail 444 extending in the longitudinal direction of the loader module 430 is provided. The base 443 is provided on the guide rail 444, and the transfer device 440 is configured to be movable along the guide rail 444.

[0108] The decompression unit 411 includes a transfer module 450 that conveys the substrate W and the edge ring, and a processing module 460 as a plasma processing apparatus 1 that performs a desired plasma process on the substrate W conveyed from the transfer module 450. The interiors of the transfer module 450 and the processing module 460 are each maintained in a decompressed atmosphere. A plurality of, for example, six processing modules 460 are provided for one transfer module 450. Note that the number and arrangement of the processing modules 460 are not limited to this.

[0109] In the present embodiment, a storage container 464 is disposed via a gate valve 465 on the side of the processing module 460 that does not face the transfer module 450. The storage container 464 may be disposed for all the processing modules 460, or may be disposed for some of the processing modules 460. The transfer module 450 has a housing with an internal polygonal shape (a pentagonal shape in the illustrated example) and is connected to the load lock modules 420 and 421 as described above. The transfer module 450 conveys the substrate W carried into the load lock module 420 to one processing module 460, and conveys the substrate W that has been subjected to plasma processing in the processing module 460 to the atmosphere section 410 via the load lock module 421.

[0110] The processing module 460 performs plasma processing such as etching, film formation, and diffusion on the substrate W using plasma. The processing module 460 is connected to the transfer module 450 via the gate valve 461. Inside the transfer module 450, a transfer device 470 for transferring the substrate W and the edge ring is provided. The transfer device 470 includes a transfer arm 471 as a support part for supporting and moving the substrate W and the edge ring, a turntable 472 for rotatably supporting the transfer arm 471, and a base 473 on which the turntable 472 is mounted. Also, inside the transfer module 450, a guide rail 474 extending in the longitudinal direction of the transfer module 450 is provided. The base 473 is provided on the guide rail 474, and the transfer device 470 is configured to be movable along the guide rail 474. For example, the transfer arm AM in FIGS. 5 and 6 described above is the same as the transfer arm 471.

[0111] In the transfer module 450, the substrate W held in the load lock module 420 is received by the transfer arm 471 and carried into the processing module 460. Also, the substrate W held in the processing module 460 is received by the transfer arm 471 and carried out to the load lock module 421.

[0112] Furthermore, the substrate processing system 400 includes a control device 480. In the embodiment, the control device 480 processes computer-executable instructions for causing the substrate processing system 400 to execute various processes described in the present disclosure. The control device 480 can be configured to control each of the other elements of the substrate processing system 400 to execute the various processes described herein. The control device 480 may include, for example, a computer 490. The computer 490 may include, for example, a processing unit 491, a storage unit 492, and a communication interface 493. The processing unit 491 can be configured to perform various control operations based on a program stored in the storage unit 492. The communication interface 493 may communicate with other elements of the substrate processing system 400 via a communication line such as a LAN.

[0113] In the substrate processing system 400, an edge ring is stored in the storage container 464. Note that the number and arrangement of the storage containers 464 are not limited to this embodiment and can be arbitrarily set, as long as at least one is provided. The inside of the storage container 464 is also maintained in a reduced-pressure atmosphere, similar to the inside of the transfer module 450 and the processing module 460.

[0114] In the transfer module 450, the edge ring stored in the storage container 464 is received by the transfer arm 471 and transferred to the processing module 460 without passing through the transfer module 450. Also, in the transfer module 450, the edge ring held in the processing module 460 is received by the transfer arm 471 and transferred to the storage container 464 without passing through the transfer module 450. That is, for the edge ring stored in the storage container 464, the transfer device 470 extends the transfer arm 471 and accesses it via the gate valve 461, the processing module 460, and the gate valve 465.

[0115] Thereby, by arranging the storage container 464 adjacent to the processing module 460 and storing the edge ring in the storage container 464, the transfer time can be shortened and the throughput can be improved. Also, it is possible to eliminate the need to provide a storage container in the transfer module 450. Further, since the edge ring can be exchanged without passing through the transfer module 450, it is possible to avoid bringing in particles attached to the edge ring into the transfer module 450. In the present disclosure, a storage container 462 is arranged adjacent to the transfer module 450. The storage container 462 may store consumable parts such as coverings other than the edge ring and jigs. Only one of the storage containers 462 and 464 may be arranged.

[0116] The elevating unit 50 can also be used when cleaning the inside of the plasma processing apparatus 1. For example, the edge ring on the side where the object to be transported is not fixed (for example, the inner edge ring 112a) can move up and down. Therefore, by raising the inner edge ring 112a of the object to be transported during cleaning, it is possible to clean between the inner edge ring 112a and the outer edge ring 112b, and between these edge rings and the electrostatic chuck 1111. When the inner edge ring 112a is raised at a timing other than cleaning, reaction products may accumulate between the inner edge ring 112a and the outer edge ring 112b. In this case, it can be removed by raising the inner edge ring 112a during cleaning. This cleaning method is not as consumable as replacing the edge ring, but it is also effective when reaction products adhere to the edge ring of the object to be transported.

[0117] As described above, according to the substrate processing apparatus, the ring member alignment method, and the transfer method of the present embodiment, when replacing the ring member in the substrate processing apparatus, the ring member can be accurately aligned.

[0118] The substrate processing apparatus and the ring member alignment method according to the embodiment disclosed this time should be considered as illustrative and not restrictive in all respects. The embodiment can be modified and improved in various forms without departing from the scope and gist of the appended claims. The matters described in the above multiple embodiments can also adopt other configurations and can be combined within a non - conflicting range.

[0119] The substrate processing apparatus disclosed in this specification is not limited to an apparatus that processes a substrate using plasma, and may also be an apparatus that processes a substrate without using plasma.

[0120] The embodiments disclosed above include, for example, the following aspects. [Appendix 1] A plasma processing chamber, A support base accommodated in the plasma processing chamber, An inner edge ring provided around the substrate, An outer edge ring provided around the inner edge ring, wherein in a top view, an outer peripheral portion of the inner edge ring and an inner peripheral portion of the outer edge ring overlap each other, and the outer edge ring has a first alignment portion, An electrostatic chuck for the outer edge ring disposed at a position facing the outer edge ring of the support base, A lifter configured to move the inner edge ring and / or the outer edge ring up and down, and having, A substrate processing apparatus that drives the electrostatic chuck for the outer edge ring to adsorb the outer edge ring and aligns the inner edge ring with the outer edge ring by the first alignment portion. [Appendix 2] The lifter has a pin and an actuator that moves the pin up and down, The substrate processing apparatus according to Appendix 1. [Appendix 3] The first alignment portion includes a tapered surface formed on at least a part of an inner peripheral surface of the outer edge ring, The substrate processing apparatus according to Appendix 1 or Appendix 2. [Appendix 4] The first alignment portion includes a convex portion and / or a concave portion formed on at least a part of a surface of a portion that overlaps the inner edge ring in a top view, The substrate processing apparatus according to any one of Appendices 1 to 3. [Appendix 5] The inner edge ring has a second alignment portion, The inner edge ring and the outer edge ring are aligned by the first alignment portion and the second alignment portion, The substrate processing apparatus according to any one of Appendices 1 to 4. [Appendix 6] The second alignment portion includes a tapered surface formed on at least a part of the outer peripheral surface of the inner edge ring, and the inner edge ring and the outer edge ring are aligned by the tapered surface of the inner edge ring and the tapered surface of the outer edge ring. The substrate processing apparatus according to appended note 5. [Appended note 7] The second alignment portion includes a convex portion and / or a concave portion formed on at least a part of the surface of the portion that overlaps the outer edge ring in a top view, and the inner edge ring and the outer edge ring are aligned by the convex portion and / or the concave portion of the inner edge ring and the convex portion and / or the concave portion of the outer edge ring. The substrate processing apparatus according to appended note 5 or appended note 6. [Appended note 8] The electrostatic chuck for the outer edge ring is a bipolar electrostatic chuck. The substrate processing apparatus according to any one of appended notes 1 to 7. [Appended note 9] The inner edge ring and the outer edge ring are arranged concentrically. The substrate processing apparatus according to any one of appended notes 1 to 8. [Appended note 10] The inner edge ring and the outer edge ring are made of the same material. The substrate processing apparatus according to any one of appended notes 1 to 9. [Appended note 11] It is arranged at a position facing the inner edge ring of the support table and has an electrostatic chuck for the inner edge ring. The substrate processing apparatus according to any one of appended notes 1 to 10. [Appended note 12] The outer edge ring has a through hole that penetrates the outer edge ring in the thickness direction at a portion that overlaps the inner edge ring in a top view. The lifter penetrates through the through hole and moves up and down. The substrate processing apparatus according to any one of appended notes 1 to 11. [Appended note 13] It is disposed adjacent to the substrate processing apparatus and has a storage container for storing at least one of a replacement inner edge ring and a replacement outer edge ring. The substrate processing apparatus according to any one of Appendices 1 to 12. [Appendix 14] It has a gas supply unit for supplying a cleaning gas into the plasma processing chamber. The actuator drives the pin to move up and down in response to the supply of the cleaning gas. The pin is configured to raise the inner edge ring and / or the outer edge ring. The substrate processing apparatus according to Appendix 2. [Appendix 15] The substrate processing apparatus according to Appendix 2 further has a control device. The control device Carrying out at least one of the inner edge ring and the outer edge ring from the plasma processing chamber by raising and lowering the pin by an actuator. Holding at least one of the replacement inner edge ring and the replacement outer edge ring on the pin by raising the pin by the actuator. Lowering the pin by the actuator to align at least one of the replacement inner edge ring and the replacement outer edge ring with a first alignment portion provided on the outer edge ring. A substrate processing apparatus that controls a process including the above. [Appendix 16] A method for aligning a ring member executed by the substrate processing apparatus according to Appendix 2, Carrying out at least one of the inner edge ring and the outer edge ring from the plasma processing chamber by raising and lowering the pin by an actuator. Holding at least one of the replacement inner edge ring and the replacement outer edge ring on the pin by raising the pin by the actuator. Lowering the pin by the actuator to align at least one of the replacement inner edge ring and the replacement outer edge ring by a first alignment portion provided on the outer edge ring; A method for aligning a ring member, which executes a process including .

Explanation of Signs

[0121] 1 Plasma processing apparatus 2 Control device 10 Plasma processing chamber 11 Substrate support portion 13 Shower head 21 Gas source 20 Gas supply portion 30 Power supply 31 RF power supply 31a First RF generation portion 31b Second RF generation portion 32a First DC generation portion 32b Second DC generation portion 33 Third DC generation portion 40 Exhaust system 50 Lifting portion 51 Pin 54 Lifter 53 Actuator 111 Main body portion 112 Ring assembly 112a Inner edge ring 112b Outer edge ring 113a Cover ring 114 First electrostatic electrode 400 Substrate processing system

Claims

1. A plasma processing chamber, a susceptor accommodated in the plasma processing chamber, an inner edge ring provided around a substrate and automatically transferred, an outer edge ring provided around the inner edge ring and supported by the susceptor by being automatically transferred, the outer edge ring overlapping with an outer peripheral portion of the inner edge ring and an inner peripheral portion of the outer edge ring in a top view and having a first alignment portion, an electrostatic chuck for the outer edge ring disposed at a position facing the outer edge ring of the susceptor, a lifter configured to move the inner edge ring and / or the outer edge ring up and down, and having, a substrate processing apparatus that aligns the inner edge ring with the outer edge ring by the first alignment portion in a state where the electrostatic chuck for the outer edge ring is driven to adsorb the outer edge ring.

2. The lifter has a pin and an actuator that moves the pin up and down, The substrate processing apparatus according to claim 1.

3. The first alignment portion includes a tapered surface formed on at least a part of an inner peripheral surface of the outer edge ring, The substrate processing apparatus according to claim 1 or claim 2.

4. The first alignment portion includes a convex portion and / or a concave portion formed on at least a part of a surface of a portion overlapping with the inner edge ring in a top view, The substrate processing apparatus according to claim 1 or claim 2.

5. The inner edge ring has a second alignment portion, The inner edge ring and the outer edge ring are aligned by the first alignment portion and the second alignment portion, The substrate processing apparatus according to claim 1 or claim 2.

6. The second alignment portion includes a tapered surface formed on at least a part of an outer peripheral surface of the inner edge ring, and the inner edge ring and the outer edge ring are aligned by the tapered surface of the inner edge ring and the tapered surface of the outer edge ring, The substrate processing apparatus according to claim 5.

7. The second alignment portion includes a convex portion and / or a concave portion formed on at least a part of a surface of a portion overlapping with the outer edge ring in a top view, and the inner edge ring and the outer edge ring are aligned by the convex portion and / or the concave portion of the inner edge ring and the convex portion and / or the concave portion of the outer edge ring, The substrate processing apparatus according to claim 5.

8. The electrostatic chuck for the outer edge ring is a bipolar electrostatic chuck. The substrate processing apparatus according to claim 1 or claim 2.

9. The inner edge ring and the outer edge ring are arranged concentrically. The substrate processing apparatus according to claim 1 or claim 2.

10. The inner edge ring and the outer edge ring are formed of the same material. The substrate processing apparatus according to claim 1 or claim 2.

11. It is disposed at a position facing the inner edge ring of the support table and has an electrostatic chuck for the inner edge ring. The substrate processing apparatus according to claim 1 or claim 2.

12. The outer edge ring has a through hole penetrating in the thickness direction in a portion overlapping the inner edge ring in a top view, The lifter penetrates through the through hole and moves up and down. The substrate processing apparatus according to claim 1 or claim 2.

13. It has a storage container disposed adjacent to the substrate processing apparatus and storing at least one of a replacement inner edge ring and a replacement outer edge ring. The substrate processing apparatus according to claim 1 or claim 2.

14. It has a gas supply unit for supplying a cleaning gas into the plasma processing chamber, The actuator drives the pin to be movable up and down in response to the supply of the cleaning gas, The pin is configured to raise the inner edge ring and / or the outer edge ring. The substrate processing apparatus according to claim 2.

15. The substrate processing apparatus according to claim 2 further has a control device, The control device, Carrying out at least one of the inner edge ring and the outer edge ring from the plasma processing chamber by raising and lowering the pin by an actuator, Raising the pin by the actuator to hold at least one of the replacement inner edge ring and the replacement outer edge ring on the pin, Lowering the pin by the actuator to align at least one of the replacement inner edge ring and the replacement outer edge ring with a first alignment portion provided on the outer edge ring. A substrate processing apparatus that controls a process including.

16. A method for aligning a ring member executed by the substrate processing apparatus according to claim 2, Lifting and lowering a pin by an actuator to carry out at least one of an inner edge ring and an outer edge ring from a plasma processing chamber, Lifting the pin by the actuator to hold at least one of a replacement inner edge ring and a replacement outer edge ring on the pin, Lowering the pin by the actuator to align at least one of the replacement inner edge ring and the replacement outer edge ring by a first alignment portion provided on the outer edge ring, A method for aligning a ring member, which executes a process including the above.

Images