Sensor

Abstract

To provide a sensor which can make a stable detection.SOLUTION: The sensor according to an embodiment includes a structure. The structure includes a first layer, a first film including a first film region, and a first intermediate layer including a first partial region. The first partial region is between the first layer and the first film region. The volume of the first layer is variable according to a detection target around the structure. The first film includes silicon and oxygen. The first intermediate layer includes at least one selected from a group made of Pd, Pt, and Ti.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Embodiments of the present invention relate to sensors.

Background Art

[0002] For example, in a sensor, stable detection is desired.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Embodiments provide a sensor capable of stable detection.

Means for Solving the Problems

[0005] According to an embodiment, a sensor includes a structure. The structure includes a first layer, a first film including a first film region, and a first intermediate layer including a first partial region. The first partial region is between the first layer and the first film region. The volume of the first layer is changeable according to a detection target around the structure. The first film contains silicon and oxygen. The first intermediate layer contains at least one selected from the group consisting of Pd, Pt, and Ti.

Brief Description of the Drawings

[0006]

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Embodiments for Carrying Out the Invention

[0007] Hereinafter, each embodiment of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the sizes between parts, etc. are not necessarily the same as the actual ones. Even when representing the same part, there may be cases where the dimensions and ratios are represented differently in the drawings. In the present specification and each figure, the same reference numerals are given to the same elements as those described above with respect to the previously shown figures, and the detailed description will be omitted as appropriate.

[0008] (First Embodiment) FIG. 1 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. As shown in FIG. 1, the sensor 110 according to the embodiment includes a structure 18. The structure 18 includes a first layer 31, a first film 11, and a first intermediate layer 21. The first film 11 includes a first film region 11a. The first intermediate layer 21 includes a first partial region 21a. The structure 18 is, for example, a detection unit.

[0009] The first partial region 21a is between the first layer 31 and the first film region 11a. The direction from the first layer 31 to the first film region 11a is defined as the first direction D1. The first direction D1 is the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

[0010] The first layer 31 extends along the X-Y plane. The first layer 31 may be substantially parallel to the X-Y plane.

[0011] The volume of the first layer 31 can vary according to the detection target around the structure 18. For example, the detection target is a gas. The detection target is, for example, hydrogen. The detection target may include at least one selected from the group consisting of hydrogen, hydrogen molecules, and hydrogen ions. The electrical resistance of the first layer 31 may also vary according to the detection target around the structure 18.

[0012] For example, the first layer 31 can take in the detection target (e.g., hydrogen). For example, when the detection target is taken into the first layer 31, the volume of the first layer 31 increases. Due to the change in volume, the structure 18 may be deformed. For example, by detecting the deformation, the concentration of the detection target can be detected.

[0013] When the detection target is taken into the first layer 31, the resistivity of the first layer 31 changes (e.g., increases). Thereby, the electrical resistance of the first layer 31 changes. By detecting the change in electrical resistance, the concentration of the detection target can be detected.

[0014] In an embodiment, the first film 11 contains silicon and oxygen. The first film 11 contains, for example, SiO x (1 ≤ x ≤ 2). The first film 11 contains, for example, SiO2. For example, the first film 11 allows the detection target to pass through. The first film 11 hardly allows substances different from the detection target (e.g., oxygen, etc.) to pass through. For example, the permeation rate of hydrogen in the first film 11 is higher than the permeation rate of oxygen in the first film 11. The permeation of oxygen is suppressed by the first film 11. By providing the first film 11, the influence of substances different from the detection target can be suppressed. The detection target can be detected with high sensitivity. The first film 11 may contain at least one selected from the group consisting of silicon and aluminum, and oxygen. The first film 11 may contain, for example, aluminum and oxygen. The first film 11 may contain, for example, aluminum oxide.

[0015] In an embodiment, the first intermediate layer 21 contains at least one selected from the group consisting of Pd, Pt, and Ti. For example, the structure of the first layer 31 may change due to the influence of a substance different from the detection target (such as water). For example, due to the influence of water or the like present around the structure 18, the amorphousness or crystallinity of the first layer 31 may change. For example, due to the influence of water or the like, the characteristics of the first layer 31 change. As a result, the degree of change in characteristics with respect to the detection target changes. Stable detection becomes difficult.

[0016] In the embodiment, by providing the first intermediate layer 21, changes in characteristics due to a substance different from the detection target (such as water) are suppressed. For example, the transmittance of a substance different from the detection target (such as water) in the first intermediate layer 21 is low. A substance different from the detection target (such as water) does not substantially permeate the first intermediate layer 21. Thereby, the influence of a substance different from the detection target (such as water) can be suppressed. According to the embodiment, more stable detection becomes possible.

[0017] According to the embodiment, the influence of a substance different from the detection target (such as oxygen or water) can be suppressed. According to the embodiment, a sensor capable of stable detection can be provided.

[0018] In the embodiment, the first layer 31 contains Pd, Cu, and Si. Thereby, when hydrogen is the detection target, a large volume change is easily obtained. When hydrogen is the detection target, a large resistance change is easily obtained. Hydrogen can be detected with high sensitivity. The first layer 31 includes, for example, an alloy containing Pd, Cu, and Si. For example, due to the catalytic action of the first intermediate layer 21, hydrogen molecules are efficiently changed into hydrogen atoms. As a result, changes in the first layer 31 caused by hydrogen (changes in volume or electrical resistance) occur more effectively.

[0019] In the embodiment, at least a part of the first layer 31 is preferably amorphous. Thereby, the signal obtained from the structure 18 (for example, the detection unit) responds rapidly to hydrogen. Hysteresis can be suppressed in the absorption and release of hydrogen.

[0020] Hereinafter, examples of characteristics when the detection target is hydrogen will be described. FIG. 2 is a graph illustrating the characteristics of the sensor. Let the concentration of the detection target (hydrogen) in the atmosphere around the structure 18 be concentration C. The horizontal axis of FIG. 2 is C 1 / 2 In FIG. 2, the vertical axis is the detection sensitivity S1 (relative value). FIG. 2 illustrates the characteristics of the sensor 110 according to the embodiment. The figure also illustrates the characteristics of the sensor 119 of the first reference example. In the sensor 110, as described above, the structure 18 includes the first layer 31, the first film 11, and the first intermediate layer 21. In the sensor 119, the structure 18 includes the first layer 31 and does not include the first film 11 and the first intermediate layer 21. In FIG. 2, the atmosphere around the structure 18 is air and contains oxygen and hydrogen.

[0021] In this example, the first layer 31 includes an alloy containing Pd, Cu, and Si. The first intermediate layer 21 includes Pt. The first film 11 includes SiO x (1 ≤ x ≤ 2).

[0022] As shown in FIG. 2, in the sensor 110, the sensitivity S1 changes with high linearity for a wide range of changes in the concentration C 1 / 2 .

[0023] On the other hand, in the sensor 119, in the region where the concentration C 1 / 2 is low, the sensitivity S1 is low and the linearity is low.

[0024] In the sensor 119 of the first reference example, the oxygen contained in the atmosphere (air) reaches the first layer 31. The oxygen that reaches the first layer 31 reacts with the dissociated hydrogen on the surface of the first layer 31 and dissipates into the atmosphere. As a result, the hydrogen attached or incorporated into the first layer 31 detaches from the first layer 31. Therefore, it is considered that it is difficult to obtain a high sensitivity S1.

[0025] In contrast, in the sensor 110 according to the embodiment, by providing the first film 11, the oxygen in the atmosphere is suppressed from reaching the first layer 31. For example, the first film 11 blocks oxygen. By suppressing the influence of oxygen, high sensitivity can be obtained. High linearity can be obtained.

[0026] FIGS. 3(a) to 3(c) are graphs illustrating the characteristics of the sensor. FIG. 3(a) corresponds to the sensor 119 of the first reference example. FIG. 3(b) corresponds to the sensor 118 of the second reference example. FIG. 3(c) corresponds to the sensor 110 according to the embodiment. In the sensor 118, the structure 18 includes the first layer 31 and the first intermediate layer 21 and does not include the first film 11.

[0027] These figures illustrate the results of XRD (X-ray Diffraction) analysis. The horizontal axis of these figures is the angle 2θ. The vertical axis is the signal intensity Int1. These figures illustrate the characteristics of the sample after the high-temperature test. Before the high-temperature test, the first layer 31 is amorphous. The conditions of the high-temperature test in FIG. 3(a) are 300°C for 1 hour. The conditions of the high-temperature test in FIG. 3(b) are 300°C for 1 hour. The conditions of the high-temperature test in FIG. 3(c) are 300°C for 15 hours.

[0028] As shown in FIGS. 3(b) and 3(c), in the sensor 118 and the sensor 110, a first peak p1, a second peak p2, and a third peak p3 are observed. In the first peak p1, the angle 2θ is about 40 degrees (38 degrees or more and 42 degrees or less). The first peak p1 corresponds to Pt(111) and the amorphous layer. In the second peak p2, the angle 2θ is about 69 degrees (67 degrees or more and 71 degrees or less). The second peak p2 corresponds to Si. In the third peak p3, the angle 2θ is about 86 degrees (84 degrees or more and 88 degrees or less). The third peak p3 corresponds to Pt(222).

[0029] On the one hand, as shown in Fig. 3(a), in the sensor 119, peaks different from the above-mentioned first to third peaks p1 to p3 are observed. In the sensor 119, it is considered that the structure of the first layer 31 has changed in the high-temperature test. For example, regarding Pd contained in the first layer 31, peaks of Pd(111), Pd(311), Pd(222), and Pd(400) are observed. Due to the influence of oxygen and water in the high-temperature test, the structure of the first layer 31 changes.

[0030] When the structure changes, the characteristics of volume change or resistance change based on the detection target in the first layer 31 change. As a result, stable detection is difficult.

[0031] In the sensors 118 and 110, substantially no change in structure is observed even after the high-temperature test. It is considered that the influence of water can be suppressed by the first intermediate layer 21 and the first film 11.

[0032] In the embodiment, the thickness along the first direction D1 of the first layer 31 is defined as thickness t31. In the embodiment, the thickness t31 is preferably, for example, 10 nm or more and 10 μm or less.

[0033] In the embodiment, the thickness along the first direction D1 of the first partial region 21a is defined as thickness t21. In the embodiment, the thickness t21 is preferably, for example, 1 nm or more and 1000 nm or less.

[0034] In the embodiment, the thickness along the first direction D1 of the first film region 11a is defined as thickness t11. In the embodiment, the thickness t11 is preferably, for example, 1 nm or more and 1000 nm or less.

[0035] As shown in FIG. 1, the structure 18 may further include a base layer 10B. There is a first layer 31 between the base layer 10B and the first film region 11a. The base layer 10B includes at least one selected from the group consisting of silicon, aluminum, and titanium, and at least one selected from the group consisting of oxygen and nitrogen. In one example, the base layer 10B includes at least one selected from the group consisting of silicon nitride and silicon oxide. The base layer 10B may include at least one selected from the group consisting of aluminum oxide and titanium nitride. A base layer 10B with stable characteristics can be obtained.

[0036] For example, based on the volume change of the first layer 31, stress is generated between the base layer 10B and the first layer 31. As a result, the structure 18 becomes more likely to deform. By detecting the deformation, the detection target can be detected with high sensitivity. The detection of the deformation may be performed, for example, by detecting electrical characteristics. The detection of the deformation may also be optically detected.

[0037] In the embodiment, the thickness along the first direction D1 of the base layer 10B is defined as thickness t10B. In the embodiment, the thickness t10B is preferably, for example, 10 nm or more and 100 μm or less.

[0038] FIG. 4 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. As shown in FIG. 4, in the sensor 111 according to the embodiment, the structure 18 further includes a second intermediate layer 22. The configuration of the sensor 111 excluding this may be the same as that of the sensor 110.

[0039] The second intermediate layer 22 is between the base layer 10B and the first layer 31. The second intermediate layer 22 contains Ti. The second intermediate layer 22 may include at least one selected from the group consisting of Pd, Pt, and Ti.

[0040] By providing the second intermediate layer 22, the first layer 31 can be fixed to the base layer 10B with high adhesion. For example, peeling and the like can be suppressed.

[0041] FIG. 5(a) and FIG. 5(b) are schematic cross-sectional views illustrating the sensor according to the first embodiment. As shown in FIG. 5(a), in the sensor 112 according to the embodiment, the first film 11 further includes a second film region 11b and a third film region 11c. The configuration of the sensor 112 except this may be the same as that of the sensor 110.

[0042] In the second direction D2 intersecting the first direction D1 from the first layer 31 to the first film region 11a, the first layer 31 is between the second film region 11b and the third film region 11c. The second direction D2 is, for example, the X-axis direction. The second direction D2 may be, for example, the Y-axis direction. In the sensor 112, the first layer 31 may be provided between a plurality of portions of the first film 11 in two directions intersecting the first direction D1. For example, the first film 11 covers the first layer 31.

[0043] In the sensor 112, the influence of oxygen can be effectively suppressed with respect to the side surface of the first layer 31 by the second film region 11b and the third film region 11c. More stable detection becomes possible. Higher sensitivity can be obtained.

[0044] For example, the first film region 11a is continuous with the second film region 11b and the third film region 11c. For example, the second film region 11b and the third film region 11c are in contact with the base layer 10B.

[0045] As shown in FIG. 5(b), in the sensor 112 according to the embodiment, the first film 11 may further include a fourth film region 11d and a fifth film region 11e.

[0046] In the third direction D3, the first layer 31 is between the fourth film region 11d and the fifth film region 11e. The third direction D3 intersects the plane including the first direction D1 and the second direction D2. The third direction D3 is, for example, the Y-axis direction. For example, the first film 11 covers the first layer 31.

[0047] For example, the first film region 11a is continuous with the fourth film region 11d and the fifth film region 11e. The second film region 11b is continuous with the fourth film region 11d and the fifth film region 11e. The third film region 11c is continuous with the fourth film region 11d and the fifth film region 11e. For example, the fourth film region 11d and the fifth film region 11e are in contact with the base layer 10B.

[0048] Figs. 6(a) to 6(c) and Figs. 7(a) to 7(c) are schematic cross-sectional views illustrating a method of manufacturing a sensor according to the first embodiment. As shown in Fig. 6(a), a film 31f serving as the first layer 31 and a film 21f serving as the first intermediate layer 21 are formed on the base layer 10B. The formation of these films is performed, for example, by sputtering.

[0049] As shown in Fig. 6(b), a mask member M1 is formed on the film 21f. The mask member M1 has a target pattern shape. Using the mask member M1 as a mask, a part of the film 31f and the film 21f is removed. The removal of a part of these films can be carried out, for example, by wet etching or dry etching.

[0050] As shown in Fig. 6(c), the mask member M1 is removed. The first layer 31 and the first intermediate layer 21 are obtained.

[0051] As shown in Fig. 7(a), a film 11f serving as the first film 11 is formed on the workpiece. The formation of the film 11f is performed, for example, by sputtering or the like.

[0052] As shown in Fig. 7(b), a mask member M2 is formed on the film 11f. The mask member M2 has a target pattern shape. Using the mask member M2 as a mask, a part of the film 11f is removed. The removal of a part of the film 11f can be carried out, for example, by wet etching or dry etching.

[0053] As shown in Fig. 7(c), the mask member M2 is removed. The first film 11 is obtained. Thereby, the sensor 112 is obtained.

[0054] FIG. 8 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. As shown in FIG. 8, in the sensor 113 according to the embodiment, the structure 18 further includes a second intermediate layer 22. The configuration of the sensor 113 excluding this may be the same as that of the sensor 112.

[0055] FIGS. 9(a) and 9(b) are schematic cross-sectional views illustrating the sensor according to the first embodiment. As shown in FIG. 9(a), in the sensor 114 according to the embodiment, the first intermediate layer 21 further includes a second partial region 21b and a third partial region 21c. The configuration of the sensor 114 excluding this may be the same as that of the sensor 112.

[0056] In the second direction D2, the second partial region 21b is between the second film region 11b and the first layer 31. In the second direction D2, the third partial region 21c is between the first layer 31 and the third film region 11c.

[0057] In the sensor 114, the influence of water can be effectively suppressed with respect to the side surface of the first layer 31 by the second partial region 21b and the third partial region 21c. More stable detection becomes possible. Higher sensitivity can be obtained.

[0058] As shown in FIG. 9(a), the first partial region 21a may be continuous with the second partial region 21b and the third partial region 21c.

[0059] The second partial region 21b and the third partial region 21c preferably contact the base layer 10B. The first layer 31 is more effectively protected by the second partial region 21b and the third partial region 21c.

[0060] In the sensor 114, the first layer 31 may be provided between a plurality of portions of the first intermediate layer 21 in two directions intersecting the first direction D1. For example, the first intermediate layer 21 covers the first layer 31.

[0061] As shown in FIG. 9(b), in the sensor 114 according to the embodiment, the first intermediate layer 21 may further include a fourth partial region 21d and a fifth partial region 21e.

[0062] In the third direction D3, the fourth partial region 21d is between the fourth film region 11d and the first layer 31. In the third direction D3, the fifth partial region 21e is between the first layer 31 and the fifth film region 11e.

[0063] For example, the first partial region 21a is continuous with the fourth partial region 21d and the fifth partial region 21e. The second partial region 21b is continuous with the fourth partial region 21d and the fifth partial region 21e. The third partial region 21c is continuous with the fourth partial region 21d and the fifth partial region 21e. For example, the fourth partial region 21d and the fifth partial region 21e are in contact with the base layer 10B.

[0064] FIGS. 10(a) to 10(c), FIGS. 11(a) to 11(c), FIGS. 12(a) and 12(b) are schematic cross-sectional views illustrating a method of manufacturing a sensor according to the first embodiment.

[0065] As shown in FIG. 10(a), a film 31f serving as the first layer 31 is formed on the base layer 10B. The formation of the film 31f is performed, for example, by sputtering. Further, a mask member M1 is formed on the film 31f. The mask member M1 has a target pattern shape.

[0066] As shown in FIG. 10(b), by using the mask member M1 as a mask and removing a part of the film 31f, the first layer 31 is obtained. The removal of a part of the film 31f can be performed, for example, by wet etching or dry etching. The mask member M1 is removed.

[0067] As shown in FIG. 10(c), a film 21f serving as the first intermediate layer 21 is formed on the workpiece (the base layer 10B and the first layer 31). The formation of the film 21f is performed, for example, by sputtering or the like.

[0068] As shown in Fig. 11(a), a mask member M2 is formed on the film 21f. The mask member M2 has a target pattern shape.

[0069] As shown in Fig. 11(b), using the mask member M2 as a mask, a part of the film 21f is removed. The removal of a part of the film 21f can be carried out, for example, by wet etching or dry etching. Thereby, the first intermediate layer 21 is obtained. The mask member M2 is removed.

[0070] As shown in Fig. 11(c), a film 11f that becomes the first film 11 is formed on the processed body (base layer 10B, first layer 31, and first intermediate layer 21). The formation of the film 11f is carried out, for example, by sputtering or the like.

[0071] As shown in Fig. 12(a), a mask member M3 is formed on the film 11f. The mask member M3 has a target pattern shape. Using the mask member M3 as a mask, a part of the film 11f is removed. The removal of a part of the film 11f can be carried out, for example, by wet etching or dry etching.

[0072] As shown in Fig. 12(b), the mask member M3 is removed. The first film 11 is obtained. Thereby, the sensor 114 is obtained.

[0073] Fig. 13 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. As shown in Fig. 13, in the sensor 115 according to the embodiment, the structure 18 further includes a second intermediate layer 22. The configuration of the sensor 115 excluding this may be the same as that of the sensor 114.

[0074] (Second Embodiment) Fig. 14 is a schematic cross-sectional view illustrating the sensor according to the second embodiment. As shown in FIG. 14, the sensor 121 according to the embodiment includes a substrate 55, a first electrode 51, and a support portion 10S. The sensor 121 further includes the structure 18 described with respect to the first embodiment. As already described, the structure 18 includes a first layer 31, a first film 11, and a first intermediate layer 21. The first film 11 includes a first film region 11a. The first intermediate layer 21 includes a first partial region 21a.

[0075] The first electrode 51 is fixed to the substrate 55. The support portion 10S is fixed to the substrate 55 and supports the structure 18. The first electrode 51 is located between the substrate 55 and the structure 18. A first gap g1 is provided between the first electrode 51 and the structure 18.

[0076] In the sensor 121, the distance d1 between the first electrode 51 and the structure 18 can be changed according to the detection target. For example, the structure 18 changes according to the concentration of the detection target. Thereby, the distance d1 changes.

[0077] For example, the conductive member included in the structure 18 may function as a counter electrode. The capacitance between the first electrode 51 and the conductive member (counter electrode) is detected. Thereby, a change in the distance d1 may be detected.

[0078] In this example, the structure 18 further includes a second electrode 52. A first gap g1 is provided between the first electrode 51 and the second electrode 52. The capacitance between the first electrode 51 and the second electrode 52 can be changed according to the detection target.

[0079] In this example, a circuit portion 70 is provided. The circuit portion 70 is electrically connected to the first electrode 51 and a counter electrode (for example, the second electrode 52). The circuit portion 70 can detect a value corresponding to a change in the capacitance between the first electrode 51 and the counter electrode (for example, the second electrode 52). The sensor 121 is, for example, a capacitance change type gas sensor.

[0080] (Third Embodiment) FIG. 15 is a schematic cross-sectional view illustrating a sensor according to the third embodiment. As shown in FIG. 15, the sensor 131 according to the embodiment includes a substrate 55 and a support portion 10S. The sensor 131 further includes the structure 18 described with respect to the first embodiment. The support portion 10S is fixed to the substrate 55 and supports the structure 18. In the sensor 131, the electrical resistance of the first layer 31 due to the detection target is detected. For example, the sensor 131 may include a circuit portion 70. The circuit portion 70 can detect a value corresponding to the electrical resistance of the first layer 31.

[0081] In the sensor 131, a first gap g1 may be provided between the substrate 55 and the structure 18. For example, the influence of the temperature of the substrate 55 is suppressed. Detection with higher accuracy becomes possible.

[0082] The embodiment may include the following configuration (for example, technical solution). (Configuration 1) A first layer, A first film including a first film region, A first intermediate layer including a first partial region, A structure including the above, The first partial region is between the first layer and the first film region, The volume of the first layer can change according to the detection target around the structure, The first film contains silicon and oxygen, The first intermediate layer contains at least one selected from the group consisting of Pd, Pt, and Ti, a sensor.

[0083] (Configuration 2) The first layer contains Pd, Cu, and Si, the sensor according to Configuration 1.

[0084] (Configuration 3) At least a part of the first layer is amorphous, the sensor according to Configuration 1 or 2.

[0085] (Configuration 4) The detection target contains hydrogen, the sensor according to any one of Configurations 1 to 3.

[0086] (Configuration 5) The first film is SiO x (1 ≦ x ≦ 2) The sensor according to any one of Configurations 1 to 4.

[0087] (Configuration 6) The structure further includes a base layer, The sensor according to any one of Configurations 1 to 5, wherein the first layer is between the base layer and the first film region.

[0088] (Configuration 7) The base layer includes at least one selected from the group consisting of silicon, aluminum, and titanium, and at least one selected from the group consisting of oxygen and nitrogen. The sensor according to any one of Configurations 1 to 6.

[0089] (Configuration 8) The structure further includes a second intermediate layer, The second intermediate layer is between the base layer and the first layer, The second intermediate layer includes at least one selected from the group consisting of Pd, Pt, and Ti. The sensor according to Configuration 6 or 7.

[0090] (Configuration 9) The first film further includes a second film region and a third film region, In a second direction intersecting the first direction from the first layer to the first film region, the first layer is between the second film region and the third film region. The sensor according to any one of Configurations 6 to 8.

[0091] (Configuration 10) The first film region is continuous with the second film region and the third film region. The sensor according to Configuration 9.

[0092] (Configuration 11) The second film region and the third film region are in contact with the base layer. The sensor according to Configuration 9 or 10.

[0093] (Configuration 12) The first intermediate layer further includes a second partial region and a third partial region, In the second direction, the second partial region is between the second film region and the first layer, In the second direction, the third partial region is between the first layer and the third film region, the sensor according to any one of Configurations 9 to 11.

[0094] (Configuration 13) The first partial region is continuous with the second partial region and the third partial region, the sensor according to Configuration 12.

[0095] (Configuration 14) The second partial region and the third partial region are in contact with the base layer, the sensor according to Configuration 12 or 13.

[0096] (Configuration 15) A base, A first electrode fixed to the base, A support portion fixed to the base and supporting the structure, Further comprising, The first electrode is between the base and the structure, The sensor according to any one of Configurations 1 to 14, wherein a first gap is provided between the first electrode and the structure.

[0097] (Configuration 16) The structure further includes a second electrode, The sensor according to Configuration 15, wherein a first gap is provided between the first electrode and the second electrode.

[0098] (Configuration 17) The capacitance between the first electrode and the second electrode is changeable according to the detection target, the sensor according to Configuration 16.

[0099] (Configuration 18) The sensor according to Configuration 17, further comprising a circuit portion capable of detecting a value corresponding to the capacitance.

[0100] (Configuration 19) The sensor according to any one of Configurations 15 to 18, wherein the distance between the first electrode and the structure is variable according to the detection target.

[0101] (Configuration 20) A substrate, A support portion fixed to the substrate and supporting the structure, The sensor according to any one of Configurations 1 to 14, further comprising the same.

[0102] (Configuration 21) A first layer, A first film including a first film region, A first intermediate layer including a first partial region, A structure including the same is provided, The first partial region is between the first layer and the first film region, The volume of the first layer is variable according to the detection target around the structure, The first film contains aluminum and oxygen, The first intermediate layer contains at least one selected from the group consisting of Pd, Pt, and Ti.

[0103] (Configuration 22) A first layer, A first film including a first film region, A first intermediate layer including a first partial region, A structure including the same is provided, The first partial region is between the first layer and the first film region, The electrical resistance of the first layer is variable according to the detection target around the structure, The first film contains silicon and oxygen, The first intermediate layer contains at least one selected from the group consisting of Pd, Pt, and Ti.

[0104] (Configuration 23) The sensor according to Configuration 22, further comprising a circuit portion capable of detecting a value corresponding to the electrical resistance.

[0105] (Configuration 24) The first film further includes a second film region and a third film region, In a second direction intersecting the first direction from the first layer to the first film region, the first layer is the sensor according to any one of Configurations 21 to 23, which is between the second film region and the third film region.

[0106] (Configuration 25) The structure further includes a base layer, The sensor according to any one of Configurations 21 to 23, wherein the first layer is between the base layer and the first film region.

[0107] (Configuration 26) The structure further includes a second intermediate layer, The second intermediate layer is between the base layer and the first layer, The sensor according to Configuration 25, wherein the second intermediate layer includes at least one selected from the group consisting of Pd, Pt, and Ti.

[0108] (Fourth Embodiment) FIGS. 16(a) and 16(b) are schematic cross-sectional views illustrating the sensor according to the fourth embodiment. As shown in FIGS. 16(a) and 16(b), in the sensor 112a according to the embodiment, the first film 11 further includes a second extending region 11ba, a third extending region 11ca, a fourth extending region 11da, and a fifth extending region 11ea. The configuration of the sensor 112a excluding this may be the same as that of the sensor 112.

[0109] The second extending region 11ba is continuous with the second film region 11b. The second extending region 11ba extends along the base layer 10B. The third extending region 11ca is continuous with the third film region 11c. The third extending region 11ca extends along the base layer 10B. For example, the second extending region 11ba and the third extending region 11ca are in contact with the base layer 10B.

[0110] The fourth extending region 11da is continuous with the fourth film region 11d. The fourth extending region 11da extends along the base layer 10B. The fifth extending region 11ea is continuous with the fifth film region 11e. The fifth extending region 11ea extends along the base layer 10B. For example, the fourth extending region 11da and the fifth extending region 11ea are in contact with the base layer 10B.

[0111] In the sensor 112a, the second film region 11b and the third film region 11c can effectively suppress the influence of oxygen in the region between the side surface of the first layer 31 and the base layer 10B. More stable detection becomes possible. Higher sensitivity can be obtained.

[0112] FIGS. 17(a) and 17(b) are schematic cross-sectional views illustrating the sensor according to the fourth embodiment. As shown in FIGS. 17(a) and 17(b), in the sensor 114a according to the embodiment, the first film 11 further includes a second extending region 11ba, a third extending region 11ca, a fourth extending region 11da, and a fifth extending region 11ea. The configuration of the sensor 114a excluding this may be the same as that of the sensor 114. In the sensor 114a, the influence of oxygen can be effectively suppressed. More stable detection becomes possible. Higher sensitivity can be obtained.

[0113] FIG. 18 is a schematic cross-sectional view illustrating the sensor according to the fourth embodiment. As shown in FIG. 18, in the sensor 121a according to the embodiment, the first film 11 includes a second extending region 11ba and a third extending region 11ca. In the sensor 121a, the fourth extending region 11da and the fifth extending region 11ea may be provided (see FIGS. 16(a) and 16(b)). The configuration of the sensor 121a excluding this may be the same as that of the sensor 121. In the sensor 121a, the influence of oxygen can be effectively suppressed. More stable detection becomes possible. Higher sensitivity can be obtained.

[0114] FIG. 19 is a schematic cross-sectional view illustrating the sensor according to the fourth embodiment. As shown in FIG. 19, in the sensor 131a according to the embodiment, the first film 11 includes a second extending region 11ba and a third extending region 11ca. In the sensor 131a, a fourth extending region 11da and a fifth extending region 11ea may be provided (see FIGS. 16(a) and 16(b)). The configuration of the sensor 131a excluding this may be the same as that of the sensor 131. In the sensor 131a, the influence of oxygen can be effectively suppressed. More stable detection becomes possible. Higher sensitivity can be obtained.

[0115] According to the embodiment, a sensor capable of stable detection can be provided.

[0116] As described above, the embodiments of the present invention have been described with reference to specific examples. However, the present invention is not limited to these specific examples. For example, with regard to the specific configuration of each element such as the structure, layer, film, and circuit portion included in the sensor, the present invention can be similarly implemented by appropriately selecting from the range known to those skilled in the art, and as long as the same effects can be obtained, it is included in the scope of the present invention.

[0117] Also, combinations of any two or more elements of each specific example within a technically possible range are included in the scope of the present invention as long as they include the gist of the present invention.

[0118] In addition, based on the sensor described above as an embodiment of the present invention, all sensors that can be appropriately designed and modified by those skilled in the art also belong to the scope of the present invention as long as they include the gist of the present invention.

[0119] In addition, within the scope of the idea of the present invention, those skilled in the art can conceive of various modification examples and correction examples, and it is understood that those modification examples and correction examples also belong to the scope of the present invention.

[0120] Although some embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are also included in the invention described in the claims and the equivalent scope thereof.

Explanation of Reference Numerals

[0121] 10B…Base layer, 10S…Support part, 11…First film, 11a~11e…First to fifth film regions, 11ba, 11ca, 11da, 11ea…Second to fifth extending regions, 11f…Film, 18…Structure, 21…First intermediate layer, 21a~21e…First to fifth partial regions, 21f…Film, 22…Second intermediate layer, 31…First layer, 31f…Film, 51, 52…First and second electrodes, 55…Substrate, 70…Circuit part, 110~115, 112a, 114a, 118, 119, 121, 121a, 131, 131a…Sensors, 2θ…Angle, D1~D3…First to third directions, Int1…Intensity, M1~M3…Mask members, d1…Distance, g1…First gap, p1~p3…First to third peaks, t10B, t11, t21, t31…Thickness

Claims

1. a first layer, a first film including a first film region, a first intermediate layer including a first partial region, a structure including the above, wherein the first partial region is between the first layer and the first film region, the volume of the first layer is changeable according to a detection target around the structure, the first film contains silicon and oxygen, the first intermediate layer contains at least one selected from the group consisting of Pd, Pt, and Ti, a sensor.

2. The sensor according to claim 1, wherein the first layer contains Pd, Cu, and Si.

3. The sensor according to claim 1, wherein the detection target contains hydrogen.

4. The structure further includes a base layer, The sensor according to claim 1, wherein the first layer is between the base layer and the first film region.

5. The structure further includes a second intermediate layer, the second intermediate layer is between the base layer and the first layer, The sensor according to claim 4, wherein the second intermediate layer contains at least one selected from the group consisting of Pd, Pt, and Ti.

6. The first film further includes a second film region and a third film region, In a second direction intersecting with a first direction from the first layer to the first film region, the first layer is between the second film region and the third film region, the sensor according to claim 4.

7. The first intermediate layer further includes a second partial region and a third partial region, In the second direction, the second partial region is between the second film region and the first layer, In the second direction, the third partial region is between the first layer and the third film region, the sensor according to claim 6.

8. The first film further includes a second extending region and a third extending region, the second extending region is continuous with the second film region, the second extending region extends along the base layer, the third extending region is continuous with the third film region, the third extending region extends along the base layer, the sensor according to claim 6.

9. a substrate, a first electrode fixed to the substrate, a support portion fixed to the substrate and supporting the structure, further comprising, the first electrode is between the substrate and the structure, The sensor according to any one of claims 1 to 8, wherein a first gap is provided between the first electrode and the structure.

10. The structure further includes a second electrode, The sensor according to claim 9, wherein the capacitance between the first electrode and the second electrode is changeable according to the detection target.

11. The sensor according to claim 10, further comprising a circuit unit capable of detecting a value corresponding to the capacitance.

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