Semiconductor device

Abstract

To provide a semiconductor device that can reduce inductance.SOLUTION: A semiconductor device 1 includes: a conductive metal plate 10 having a main surface 10a and a rear surface; a semiconductor element 40 including a first electrode 41 and a control electrode 43 formed on a side of an element front surface 40a, and a second electrode formed on a side of an element rear surface; a first lead 21, a second lead 31, and a third lead 81 arranged to be spaced apart from the metal plate 10 in plan view; a first wire 61 and a second wire 62 connecting the first electrode 41 and the first lead 21 and arranged to be separated from each other by a greatest distance in plan view; a third wire 70 connecting the control electrode 43 and the second lead 31; and the fourth wire 90 connecting the first electrode 41 and the third lead 81. The first wire 61 and the second wire 62 are connected so that a spacing of a connection, of the first lead 21, on a side of a wire connection is separated by a greater distance than a spacing of a connection on a side of the first electrode 41.SELECTED DRAWING: Figure 13

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device.

Background Art

[0002] A semiconductor device includes a substrate, a semiconductor element such as a power transistor mounted on the substrate, a drive lead having a drive pad connected to the source electrode of the semiconductor element via a plurality of drive wires, a control lead having a control pad connected to the gate electrode of the semiconductor element via a control wire, and a sealing resin that at least seals the semiconductor element (see, for example, Patent Documents 1 and 2). Further, in Patent Document 2, the drive lead includes a drive terminal protruding from the sealing resin. The semiconductor element is connected to the substrate by solder.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

[0004] [Summary] For example, in the semiconductor device of Patent Document 1, three drive wires are arranged adjacent to each other in a slightly spaced-apart state. Therefore, although the inductance can be reduced by connecting the three drive wires to the source electrode and the drive pad, there is still room for improvement in reducing the inductance due to the arrangement relationship of the plurality of drive wires. Such a problem is not limited to a switching element, and may similarly occur in a semiconductor device including a diode instead of a switching element.

[0005] Also, for example, in the semiconductor device of Patent Document 2, the heat dissipation of the semiconductor element is improved by exposing the substrate from the back surface of the sealing resin. However, since the substrate is exposed from the back surface of the sealing resin, there is room for improvement in enhancing the dielectric strength between the drive terminal and the substrate.

[0006] A semiconductor device according to one aspect of the present disclosure includes a conductive metal plate having a front surface and a back surface spaced apart in a first direction that is the thickness direction, an element surface facing the same direction as the front surface, an element back surface facing the element surface, a first electrode and a control electrode formed on the element surface side, and a second electrode formed on the element back surface side. The semiconductor device further includes a semiconductor element in which the element back surface is mounted on the front surface, a first lead, a second lead, and a third lead each having a wire connection portion disposed apart from the metal plate in a plan view in the first direction, a first wire and a second wire among a plurality of wires connecting the first electrode and the wire connection portion of the first lead and arranged to be most spaced apart in the plan view, a third wire connecting the control electrode and the wire connection portion of the second lead, and a fourth wire connecting the first electrode and the wire connection portion of the third lead. The first wire and the second wire are connected such that the distance between the connection portions on the wire connection portion side of the first lead is greater than the distance between the connection portions on the first electrode side.

Brief Description of the Drawings

[0007]

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[0008] [Detailed Description] Hereinafter, embodiments of the semiconductor device will be described with reference to the drawings. The following embodiments illustrate configurations and methods for embodying the technical idea, and do not limit the materials, shapes, structures, arrangements, dimensions, etc. of each component to those described below. The following embodiments can be variously modified.

[0009] (First Embodiment) Referring to FIGS. 1 to 11, a first embodiment of a semiconductor device will be described. For the cross-sectional views of FIGS. 4 and 5, hatching is omitted for convenience of illustration.

[0010] As shown in FIG. 1, the semiconductor device 1 includes a substrate 10, a drive lead 20, a control lead 30, a semiconductor element 40 mounted on a main surface 10a of the substrate 10, and a sealing resin 50 that seals the semiconductor element 40. The drive lead 20 has an outer lead 20A protruding from the sealing resin 50 and an inner lead 20B provided in the sealing resin 50 and electrically connected to the outer lead 20A. In this embodiment, the outer lead 20A and the inner lead 20B are an integrated single component. The control lead 30 has an outer lead 30A protruding from the sealing resin 50 and an inner lead 30B provided in the sealing resin 50 and electrically connected to the outer lead 30A. In this embodiment, the outer lead 30A and the inner lead 30B are an integrated single component. The lateral dimension L2 of the sealing resin 50 of the semiconductor device 1 is preferably 10 mm or less. The semiconductor device 1 of this embodiment is a package with a package outline standard (JEITA standard) of TO (Transistor Outline)-252. Specifically, the longitudinal dimension L1 of the semiconductor device 1 is 9.5 mm to 10.50 mm, the lateral dimension L2 is 6.4 mm to 6.8 mm, and the thickness dimension L3 is 2.1 mm to 2.3 mm. Further, the semiconductor device 1 is of a so-called SIP (Single Inline Package) type in which the outer lead 20A of the drive lead 20 and the outer lead 30A of the control lead 30 extend from one surface of the sealing resin 50.

[0011] As shown in FIG. 1, the shape of the encapsulating resin 50 is a rectangular parallelepiped. The encapsulating resin 50 is a synthetic resin having electrical insulation properties. In one example, the encapsulating resin 50 is an epoxy resin. The encapsulating resin 50 has six surfaces: a first encapsulating resin side surface 51, a second encapsulating resin side surface 52, a third encapsulating resin side surface 53, a fourth encapsulating resin side surface 54, an encapsulating resin bottom surface 55, and an encapsulating resin top surface 56. The first encapsulating resin side surface 51 and the second encapsulating resin side surface 52 face opposite sides with a gap therebetween. The third encapsulating resin side surface 53 and the fourth encapsulating resin side surface 54 face opposite sides with a gap therebetween. The encapsulating resin bottom surface 55 and the encapsulating resin top surface 56 face opposite sides with a gap therebetween. In the following description, the direction in which the encapsulating resin bottom surface 55 and the encapsulating resin top surface 56 are arranged is defined as the thickness direction Z, the direction in which the first encapsulating resin side surface 51 and the second encapsulating resin side surface 52 are arranged is defined as the longitudinal direction X, and the direction in which the third encapsulating resin side surface 53 and the fourth encapsulating resin side surface 54 are arranged is defined as the lateral direction Y. The longitudinal direction X and the lateral direction Y are directions orthogonal to the thickness direction Z. The longitudinal direction X is a direction orthogonal to the lateral direction Y. Here, the thickness direction Z corresponds to the first direction, the longitudinal direction X corresponds to the second direction, and the lateral direction Y corresponds to the third direction.

[0012] The encapsulating resin 50 is formed by mold molding. Each side surface 51-54 of the encapsulating resin 50 is provided with an inclined surface that inclines with respect to the thickness direction Z in order to provide a draft angle that facilitates mold extraction during the molding of the encapsulating resin 50. Specifically, each side surface 51-54 has a first inclined surface provided with a draft angle that facilitates extraction of the upper mold of the mold and a second inclined surface provided with a draft angle that facilitates extraction of the lower mold of the mold. The upper mold of the mold forms the encapsulating resin top surface 56 and the portion of each side surface 51-54 on the encapsulating resin top surface 56 side. The lower mold forms the encapsulating resin back surface 55 and the portion of each side surface 51-54 on the encapsulating resin back surface 55 side. In one example, as shown in FIGS. 4 and 5, the first encapsulating resin side surface 51 has a first inclined surface 51a and a second inclined surface 51b. The first inclined surface 51a inclines toward the second encapsulating resin side surface 52 as it goes toward the encapsulating resin top surface 56. The second inclined surface 51b inclines toward the second encapsulating resin side surface 52 as it goes toward the encapsulating resin back surface 55. The length of the first inclined surface 51a is longer than the length of the second inclined surface 51b. The second encapsulating resin side surface 52 has a first inclined surface 52a and a second inclined surface 52b. The first inclined surface 52a inclines toward the first encapsulating resin side surface 51 as it goes toward the encapsulating resin top surface 56. The second inclined surface 52b inclines toward the first encapsulating resin side surface 51 as it goes toward the encapsulating resin back surface 55. The length of the first inclined surface 52a is longer than the length of the second inclined surface 52b. The second inclined surface 52b is formed across the encapsulating resin top surface 56 side from the substrate 10. Note that the length of the first inclined surface 51a and the length of the second inclined surface 51b can each be arbitrarily changed. Also, the length of the first inclined surface 52a and the length of the second inclined surface 52b can each be arbitrarily changed.

[0013] FIG. 2 is a view of the semiconductor device 1 as seen from the encapsulating resin top surface 56 in the thickness direction Z. In FIG. 2, for convenience, the encapsulating resin 50 is shown by a two-dot chain line, and the components within the encapsulating resin 50 are shown by solid lines. As shown in FIG. 2, when the semiconductor device 1 is viewed from the sealing resin top surface 56 in the thickness direction Z (hereinafter referred to as "plan view"), the shape of the sealing resin 50 is a substantially rectangular shape in which the longitudinal direction X is the long side direction and the lateral direction Y is the short side direction. In plan view, the first sealing resin side surface 51 and the second sealing resin side surface 52 are side surfaces along the lateral direction Y, and the third sealing resin side surface 53 and the fourth sealing resin side surface 54 are side surfaces along the longitudinal direction X.

[0014] The substrate 10 has a main surface 10a and a back surface 10b (see FIG. 3) facing opposite sides in the thickness direction Z. The main surface 10a faces the same direction as the sealing resin top surface 56, and the back surface 10b faces the same direction as the sealing resin back surface 55. The substrate 10 is formed of, for example, aluminum (Al) or copper (Cu). The substrate 10 has a flat substrate main body portion 11 and a lead portion 16. In the present embodiment, the substrate main body portion 11 and the lead portion 16 are a single integrated component.

[0015] The substrate main body portion 11 can be divided into an inner main body portion 12 covered by the sealing resin 50 and a protruding portion 13 protruding from the sealing resin 50. The inner main body portion 12 and the protruding portion 13 are adjacent to each other in the longitudinal direction X. The protruding portion 13 protrudes in the longitudinal direction X from the first sealing resin side surface 51. In the present embodiment, the size of the protruding portion 13 in the lateral direction Y is smaller than the size of the inner main body portion 12 in the lateral direction Y. Note that the size of the protruding portion 13 in the lateral direction Y can be arbitrarily changed. In one example, the size of the protruding portion 13 in the lateral direction Y may be equal to the size of the inner main body portion 12 in the lateral direction Y.

[0016] In a plan view, the inner main body 12 is arranged such that the center in the longitudinal direction X thereof is closer to the first sealing resin side surface 51 than the center in the longitudinal direction X of the sealing resin 50. The inner main body 12 has a main surface 12a, a back surface 12b (see FIG. 3), a first side surface 12c, a second side surface 12d, and a third side surface 12e. The main surface 12a and the back surface 12b face opposite sides in the thickness direction Z. The main surface 12a constitutes a part of the main surface 10a of the substrate 10, and the back surface 12b constitutes the back surface 10b of the substrate 10. Therefore, the main surface 12a faces the sealing resin top surface 56 side, and the back surface 12b faces the sealing resin back surface 55 side. Also, the first side surface 12c faces the second sealing resin side surface 52, the second side surface 12d faces the third sealing resin side surface 53, and the third side surface 12e faces the fourth sealing resin side surface 54. The first side surface 12c extends along the lateral direction Y. The second side surface 12d and the third side surface 12e face each other with a space therebetween in the lateral direction Y. The second side surface 12d and the third side surface 12e extend along the longitudinal direction X.

[0017] At the end of the inner main body 12 on the side of the protruding portion 13, a narrow portion 14 is formed. The narrow portion 14 is formed by a curved concave portion 14a that recesses from the second side surface 12d toward the fourth sealing resin side surface 54 side in the lateral direction Y and a curved concave portion 14b that recesses from the third side surface 12e toward the third sealing resin side surface 53 side in the lateral direction Y. The size of the narrow portion 14 in the lateral direction Y is smaller than the size of the portion of the inner main body 12 other than the narrow portion 14 in the lateral direction Y. Also, the size of the narrow portion 14 in the lateral direction Y is smaller than the size of the protruding portion 13 in the lateral direction Y. The narrow portion 14 is provided so as to be adjacent to the first sealing resin side surface 51 of the sealing resin 50 in the longitudinal direction X. In the narrow portion 14, a through hole 15 that penetrates the narrow portion 14 in the thickness direction Z is provided. The shape of the through hole 15 in a plan view is an ellipse with the lateral direction Y as the longitudinal direction.

[0018] The inner main body 12 is provided with a plurality of flange portions 19 that protrude from the main body side surface of the inner main body 12. The plurality of flange portions 19 includes a first flange portion 19a, a second flange portion 19b, a third flange portion 19c, and a fourth flange portion 19d. The first flange portion 19a protrudes from the first side surface 12c of the inner main body portion 12 toward the second sealing resin side surface 52. The second flange portion 19b protrudes from the second side surface 12d of the inner main body portion 12 toward the third sealing resin side surface 53. The third flange portion 19c protrudes from the third side surface 12e of the inner main body portion 12 toward the fourth sealing resin side surface 54. The fourth flange portion 19d is provided at both end portions in the lateral direction Y of the narrow portion 14 and at a portion on the second sealing resin side surface 52 side of the through hole 15.

[0019] The first flange portion 19a, the second flange portion 19b, the third flange portion 19c, and the fourth flange portion 19d are each provided so as to be flush with the main surface 12a of the inner main body portion 12. Therefore, the main surface 10a of the substrate 10 is constituted by the main surface 12a of the inner main body portion 12 and the first flange portion 19a, the second flange portion 19b, the third flange portion 19c, and the fourth flange portion 19d. Further, the first flange portion 19a, the second flange portion 19b, the third flange portion 19c, and the fourth flange portion 19d are each provided so as to be on the main surface 12a side rather than the back surface 12b of the inner main body portion 12. Therefore, the back surface 10b of the substrate 10 is constituted by the back surface 12b of the inner main body portion 12. According to such a configuration of each of the flange portions 19a to 19d, separation between the substrate 10 and the sealing resin 50 can be suppressed.

[0020] As shown in FIG. 3, the back surface 10b (the back surface 12b of the inner main body portion 12) of the substrate 10 is exposed from the back surface 55 of the sealing resin. Thereby, the heat dissipation property of the substrate 10 can be improved. The sealing resin 50 enters each of the recesses 14a and 14b of the narrow portion 14 of the inner main body portion 12 and the through hole 15. Thereby, separation between the substrate 10 and the sealing resin 50 can be further suppressed.

[0021] As shown in FIGS. 2 and 4, the lead portion 16 extends from the end portion on the first side surface 12c side of the inner main body portion 12 toward the second sealing resin side surface 52 and protrudes from the second sealing resin side surface 52. The lead portion 16 can be divided into a terminal portion 17 protruding from the second sealing resin side surface 52 and a connecting portion 18 connecting the terminal portion 17 and the inner main body portion 12.

[0022] The connecting portion 18 is located in a portion on the second side surface 12d side rather than the central portion of the inner main body portion 12 in the lateral direction Y. The connecting portion 18 is continuous from the first flange portion 19a. That is, the thickness of the portion of the connecting portion 18 connected to the first flange portion 19a is equal to the thickness of the first flange portion 19a. The connecting portion 18 has an inclined portion 18a. The inclined portion 18a is inclined toward the top surface 56 of the sealing resin as it goes from the first flange portion 19a toward the second sealing resin side surface 52. The intermediate portion 18b between the inclined portion 18a and the terminal portion 17 of the connecting portion 18 is located on the sealing resin top surface 56 side rather than the main surface 12a of the inner main body portion 12. In plan view, the intermediate portion 18b has a bent portion 18c that bends toward the fourth sealing resin side surface 54. The portion of the intermediate portion 18b that contacts the second sealing resin side surface 52 is located at the central portion of the second sealing resin side surface 52 in the lateral direction Y.

[0023] The terminal portion 17 protrudes from the central portion in the lateral direction Y of the second sealing resin side surface 52. In the thickness direction Z, the position of the terminal portion 17 is the same as the position of the intermediate portion 18b. That is, the terminal portion 17 is located on the sealing resin top surface 56 side rather than the main surface 12a of the inner main body portion 12.

[0024] As shown in FIG. 2, in plan view, on the second sealing resin side surface 52 side of the sealing resin 50 rather than the substrate 10, the drive lead 20 and the control lead 30 are arranged in a state of being separated from the substrate 10 in the longitudinal direction X. The drive lead 20 and the control lead 30 are arranged in a state of being separated from each other in the lateral direction Y. The lead portion 16 is arranged between the drive lead 20 and the control lead 30 in the lateral direction Y.

[0025] The drive lead 20 has a drive pad 21, a drive terminal 22, and a connecting portion 23 that connects the drive pad 21 and the drive terminal 22. The drive pad 21 and the connecting portion 23 constitute an inner lead 20B, and the drive terminal 22 constitutes an outer lead 20A. The drive pad 21 and the connecting portion 23 are disposed between the substrate 10 and the side surface 52 of the second encapsulation resin in the longitudinal direction X. The drive pad 21 and the connecting portion 23 are disposed on the side of the fourth encapsulation resin side surface 54 rather than the central portion of the encapsulation resin 50 in the lateral direction Y in the lateral direction Y.

[0026] In a plan view, the shape of the drive pad 21 is a substantially rectangular shape in which the lateral direction Y is the long side direction and the longitudinal direction X is the short side direction. The drive pad 21 has a first end portion 21a and a second end portion 21b that are both end portions in the lateral direction Y. The first end portion 21a is an end portion on the side of the third encapsulation resin side surface 53 of the drive pad 21. The second end portion 21b is an end portion on the side of the fourth encapsulation resin side surface 54 of the drive pad 21. The first end portion 21a is disposed so as to overlap with the bent portion 18c of the lead portion 16 when viewed from the longitudinal direction X. The second end portion 21b is located on the side of the fourth encapsulation resin side surface 54 rather than the third side surface 12e of the inner main body portion 12. In the present embodiment, the size of the drive pad 21 in the lateral direction Y is smaller than the size of the semiconductor element 40 in the lateral direction Y. As shown in FIG. 5, the drive pad 21 is located on the side of the encapsulation resin top surface 56 rather than the main surface 12a of the inner main body portion 12 in the thickness direction Z. Further, the drive pad 21 is located on the side of the encapsulation resin top surface 56 rather than the surface 40a of the semiconductor element 40 in the thickness direction Z. As shown in FIGS. 4 and 5, in the present embodiment, the drive pad 21 is at the same position as the intermediate portion 18b of the lead portion 16 in the thickness direction Z.

[0027] As shown in FIG. 2, the connecting portion 23 is continuous from the end portion on the side of the second encapsulation resin side surface 52 of the drive pad 21. The connecting portion 23 is located on the side of the fourth encapsulation resin side surface 54 rather than the central portion of the drive pad 21 in the lateral direction Y. The drive terminal 22 constitutes a source terminal. As shown in FIG. 5, the drive terminal 22 protrudes from the first inclined surface 52a of the second encapsulation resin side surface 52.

[0028] As shown in FIG. 2, the control lead 30 has a control pad 31, a control terminal 32, and a connecting portion 33 that connects the control pad 31 and the control terminal 32. The control pad 31 and the connecting portion 33 constitute an inner lead 30B, and the control terminal 32 constitutes an outer lead 30A. The control pad 31 and the connecting portion 33 are disposed between the substrate 10 and the side surface 52 of the second encapsulation resin in the longitudinal direction X. The control pad 31 and the connecting portion 33 are disposed closer to the side surface 53 of the third encapsulation resin than the central portion of the encapsulation resin 50 in the lateral direction Y.

[0029] In a plan view, the shape of the control pad 31 is a substantially rectangular shape in which the lateral direction Y is the long side direction and the longitudinal direction X is the short side direction. The size of the control pad 31 in the lateral direction Y is smaller than the size of the drive pad 21 in the lateral direction Y. Therefore, the size of the drive pad 21 in the lateral direction Y can be increased. The control pad 31 is located closer to the top surface 56 of the encapsulation resin than the main surface 12a of the inner main body portion 12 in the thickness direction Z. Also, the control pad 31 is located closer to the top surface 56 of the encapsulation resin than the surface 40a of the semiconductor element 40 in the thickness direction Z. In the present embodiment, the control pad 31 is at the same position as the intermediate portion 18b of the lead portion 16 in the thickness direction Z.

[0030] The connecting portion 33 is continuous from the end portion of the control pad 31 on the side of the second encapsulation resin side surface 52. The connecting portion 33 is located closer to the side surface 53 of the third encapsulation resin among the control pads 31 in the lateral direction Y. The control terminal 32 constitutes a gate terminal. The control terminal 32 protrudes from the first inclined surface 52a of the second encapsulation resin side surface 52.

[0031] As shown in FIGS. 4 and 5, the semiconductor element 40 is mounted on the main surface 12a of the inner main body 12 by solder SD. As shown in FIG. 2, in the present embodiment, the semiconductor element 40 is disposed at the center of the inner main body 12. Specifically, in a plan view, a first distance D1 between the semiconductor element 40 and an edge of the inner main body 12 on the side of the second sealing resin side surface 52 of the first flange portion 19a is equal to a second distance D2 between the semiconductor element 40 and the narrow width portion 14 of the inner main body 12. Also, a third distance D3 between the semiconductor element 40 and an edge of the inner main body 12 on the side of the third sealing resin side surface 53 of the second flange portion 19b is equal to a fourth distance D4 between the semiconductor element 40 and an edge of the inner main body 12 on the side of the fourth sealing resin side surface 54 of the third flange portion 19c. Here, the fact that the first distance D1 and the second distance D2 are equal to each other includes, for example, an error of 5% of the first distance D1. Here, if the deviation amount between the first distance D1 and the second distance D2 is within 5% of the first distance D1, for example, it can be said that the first distance D1 and the second distance D2 are equal to each other. Also, if the deviation amount between the third distance D3 and the fourth distance D4 is within 5% of the third distance D3, for example, it can be said that the third distance D3 and the fourth distance D4 are equal to each other. Also, as shown in FIG. 2, the semiconductor element 40 and the drive pad 21 are displaced in the longitudinal direction X. Also, the semiconductor element 40 and the control pad 31 are displaced in the longitudinal direction X.

[0032] The semiconductor element 40 contains silicon carbide (SiC). In the present embodiment, a SiCMOSFET (metal-oxide-semiconductor field-effect transistor) is used as the semiconductor element 40. The semiconductor element 40 (SiCMOSFT) is an element capable of high-speed switching in response to a drive signal having a frequency of 1 kHz or more and several hundreds kHz or less. Preferably, the semiconductor element 40 is an element capable of high-speed switching in response to a drive signal having a frequency of 1 kHz or more and 100 kHz or less. In the present embodiment, the semiconductor element 40 performs high-speed switching in response to a drive signal having a frequency of 100 kHz.

[0033] The semiconductor element 40 is formed in a flat plate shape. Specifically, in a plan view, the shape of the semiconductor element 40 is a rectangular shape in which the lateral direction Y is the long side direction and the longitudinal direction X is the short side direction. In the present embodiment, the size of the semiconductor element 40 in the lateral direction Y is 3 mm. Here, the size of the semiconductor element 40 in the lateral direction Y includes an error of 5% of 3 mm (±0.15 mm).

[0034] As shown in FIGS. 2 and and FIG. 4, the semiconductor element 40 has a front surface 40a, a back surface 40b, a first side surface 40c, a second side surface 40d, a third side surface 40e, and a fourth side surface 40f. The front surface 40a and the back surface 40b face opposite directions in the thickness direction Z. The front surface 40a faces the top surface 56 of the encapsulating resin. That is, the front surface 40a faces the same direction as the main surface 10a of the substrate 10. The back surface 40b faces the bottom surface 55 of the encapsulating resin. The back surface 40b faces the main surface 12a of the inner main body portion 12. The first side surface 40c faces the first encapsulating resin side surface 51, the second side surface 40d faces the second encapsulating resin side surface 52, the third side surface 40e faces the third encapsulating resin side surface 53, and the fourth side surface 40f faces the fourth encapsulating resin side surface 54.

[0035] On the front surface 40a, a main surface side drive electrode 41 and a control electrode 43 are formed. On the back surface 40b, a back surface side drive electrode 42 (see FIG. 4) is formed. In the present embodiment, the main surface side drive electrode 41 constitutes a source electrode, and the back surface side drive electrode 42 constitutes a drain electrode. The control electrode 43 constitutes a gate electrode. The back surface side drive electrode 42 is electrically connected to the inner main body portion 12 by solder SD.

[0036] The main surface side drive electrode 41 is formed over most of the front surface 40a. In a plan view, the shape of the main surface side drive electrode 41 is a substantially rectangular shape with the longitudinal direction X as the short side direction and the lateral direction Y as the long side direction. The main surface side drive electrode 41 has a recess 41a that opens toward the third encapsulating resin side surface 53. The recess 41a is formed at the end of the main surface side drive electrode 41 on the third encapsulating resin side surface 53 side and at the center in the longitudinal direction X. The control electrode 43 is formed in the recess 41a.

[0037] The semiconductor element 40 has a passivation film 44 which is an insulating film formed on the main surface side drive electrode 41 and the control electrode 43. An opening 45 is formed in the passivation film 44 to expose a part of the main surface side drive electrode 41 and a part of the control electrode 43.

[0038] In a plan view, the shape of the opening 45 is a rectangular shape in which the lateral direction Y is the long side direction and the longitudinal direction X is the short side direction. The size of the opening 45 in the lateral direction Y is smaller than the size of the drive pad 21 in the lateral direction Y. In other words, the size of the drive pad 21 in the lateral direction Y is larger than the size of the opening 45 in the lateral direction Y.

[0039] The opening 45 is provided at the central portion of the semiconductor element 40 in the longitudinal direction X of the surface 40a. Specifically, a first distance DC1 between the opening 45 and the first side surface 40c of the semiconductor element 40, a second distance DC2 between the opening 45 and the second side surface 40d of the semiconductor element 40, a third distance DC3 between the opening 45 and the third side surface 40e of the semiconductor element 40, and a fourth distance DC4 between the opening 45 and the fourth side surface 40f of the semiconductor element 40 are equal to each other. Here, if the maximum deviation amount of the first distance DC1, the second distance DC2, the third distance DC3, and the fourth distance DC4 is within 5% of the first distance DC1, for example, it can be said that the first distance DC1, the second distance DC2, the third distance DC3, and the fourth distance DC4 are equal to each other.

[0040] The main surface side drive electrode 41 has an exposed region 46 exposed by the opening 45. The exposed region 46 has a first exposed end portion 46a and a second exposed end portion 46b which are both end portions in the lateral direction Y. The first exposed end portion 46a is an end portion on the third side surface 40e side of the semiconductor element 40 in the exposed region 46. The second exposed end portion 46b is an end portion on the fourth side surface 40f side of the semiconductor element 40 in the exposed region 46.

[0041] The semiconductor device 1 includes a plurality of drive wires 60 and one control wire 70. In the present embodiment, the plurality of drive wires 60 are composed of two drive wires, i.e., a first drive wire 61 and a second drive wire 62. That is, the first drive wire 61 and the second drive wire 62 constitute the most separated combination among the plurality of drive wires 60. The first drive wire 61 is disposed closer to the control wire 70 than the second drive wire 62.

[0042] The first drive wire 61 and the second drive wire 62 are made of the same metal. In the present embodiment, the first drive wire 61 and the second drive wire 62 contain aluminum. The wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62. Here, if the deviation amount between the wire diameter of the first drive wire 61 and the wire diameter of the second drive wire 62 is within 5% of the wire diameter of the first drive wire 61, it can be said that the wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62. In the present embodiment, the wire diameters of the first drive wire 61 and the second drive wire 62 are equal to the wire diameter of the control wire 70. Here, if the deviation amount between the wire diameters of the first drive wire 61 and the second drive wire 62 and the wire diameter of the control wire 70 is within 5% of the wire diameter of the control wire 70, it can be said that the wire diameters of the first drive wire 61 and the second drive wire 62 are equal to the wire diameter of the control wire 70. An example of the respective wire diameters of the first drive wire 61, the second drive wire 62, and the control wire 70 is 125 μm to 250 μm. In the present embodiment, the respective wire diameters of the first drive wire 61, the second drive wire 62, and the control wire 70 are 125 μm.

[0043] The first drive wire 61 and the second drive wire 62 connect the main surface side drive electrode 41 and the drive pad 21 of the semiconductor element 40 in a state of being separated from each other. The first drive wire 61 and the second drive wire 62 are respectively connected to the main surface side drive electrode 41 and the drive pad 21, for example, by wire bonding. In a plan view, the first drive wire 61 and the second drive wire 62 are arranged separated from each other in the lateral direction Y. The first drive wire 61 and the second drive wire 62 are the drive wires at both ends in the lateral direction Y among the plurality of drive wires 60.

[0044] In plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 such that they are farther apart on the drive pad 21 side than on the main surface side drive electrode 41 side. In plan view, the distance between the first drive wire 61 and the second drive wire 62 widens as it goes from the main surface side drive electrode 41 toward the drive pad 21 side. Hereinafter, the configuration of the first drive wire 61 and the second drive wire 62 will be described in detail.

[0045] As shown in FIG. 6, the first drive wire 61 has a drive electrode side end portion 61a and a drive pad side end portion 61b. The second drive wire 62 has a drive electrode side end portion 62a and a drive pad side end portion 62b. In plan view, the distance DW2 between the drive pad side end portion 61b and the drive pad side end portion 62b is larger than the distance DW1 between the drive electrode side end portion 61a and the drive electrode side end portion 62a. As shown in FIG. 6, in plan view, the distance DW1 is the minimum value of the distance between the first drive wire 61 and the second drive wire 62, and the distance DW2 is the maximum value of the distance between the first drive wire 61 and the second drive wire 62.

[0046] The distance in the lateral direction Y between the auxiliary line LS1 along the longitudinal direction X from the drive electrode side end portion 61a and the auxiliary line LS2 along the longitudinal direction X from the drive pad side end portion 61b is defined as the distance DY1, and the distance in the lateral direction Y between the auxiliary line LS3 along the longitudinal direction X from the drive electrode side end portion 62a and the auxiliary line LS4 along the longitudinal direction X from the drive pad side end portion 62b is defined as the distance DY2. In this case, the distance DY2 is larger than the distance DY1.

[0047] The drive electrode side end portion 61a of the first drive wire 61 is connected to the first exposed end portion 46a side rather than the central portion in the lateral direction Y of the exposed region 46 of the main surface side drive electrode 41. In the present embodiment, the drive electrode side end portion 61a is connected to the first exposed end portion 46a. Specifically, the drive electrode side end portion 61a is connected to the portion adjacent to the control electrode 43 in the main surface side drive electrode 41 in the lateral direction Y, that is, the portion constituting the bottom of the recess 41a of the main surface side drive electrode 41.

[0048] The drive pad side end portion 61b of the first drive wire 61 is connected to the first end portion 21a side rather than the central portion in the lateral direction Y of the drive pad 21. In the present embodiment, the drive pad side end portion 61b is connected to the first end portion 21a of the drive pad 21. In one example, the drive pad side end portion 61b is arranged to be the limit position on the side of the third encapsulation resin side surface 53 in the region where wire bonding can be performed as the first end portion 21a of the drive pad 21. Specifically, the position in the lateral direction Y of the drive pad side end portion 61b with respect to the first end portion 21a is set so that the capillary for supplying the first drive wire 61 in the wire bonding apparatus is located at the edge on the side of the third encapsulation resin side surface 53 of the first end portion 21a of the drive pad 21. The drive pad side end portion 61b is arranged in the longitudinal direction X at a portion closer to the semiconductor element 40 side than the central portion of the drive pad 21 in the longitudinal direction X. The drive pad side end portion 61b is arranged to be on the side of the fourth encapsulation resin side surface 54 rather than the drive electrode side end portion 61a.

[0049] The drive electrode side end portion 62a of the second drive wire 62 is connected to the second exposed end portion 46b side rather than the central portion in the lateral direction Y of the exposed region 46 of the main surface side drive electrode 41. In the present embodiment, the drive electrode side end portion 62a is connected to the second exposed end portion 46b. In one example, the drive electrode side end portion 62a is arranged to be the limit position on the fourth side surface 40f side of the region where wire bonding can be performed as the end portion on the fourth side surface 40f side of the semiconductor element 40 in the opening 45 in the lateral direction Y. Specifically, the position in the lateral direction Y of the drive electrode side end portion 62a with respect to the second exposed end portion 46b of the exposed region 46 is set so that the capillary for supplying the second drive wire 62 in the wire bonding apparatus is located at the edge on the fourth side surface 40f side of the exposed region 46. In the longitudinal direction X, the drive electrode side end portion 62a is arranged in the lateral direction Y in a state aligned with the drive electrode side end portion 61a of the first drive wire 61. Here, the state where the drive electrode side end portion 62a and the drive electrode side end portion 61a are aligned means that both drive electrode side end portions 61a, 62a in the longitudinal direction X overlap each other, and includes the case where a part overlaps according to the manufacturing error caused by wire bonding. In other words, if the amount of deviation in the longitudinal direction X at both drive electrode side end portions 61a, 62a is within the variation range in performing wire bonding, it can be said that both drive electrode side end portions 61a, 62a are aligned in the longitudinal direction X.

[0050] The drive pad side end 62b of the second drive wire 62 is connected to the second end 21b side rather than the central part in the lateral direction Y of the drive pad 21. In the present embodiment, the drive pad side end 62b is connected to the second end 21b of the drive pad 21. In one example, the drive pad side end 62b is arranged to be the limit position on the side of the fourth encapsulation resin side surface 54 in the region where wire bonding can be performed as the second end 21b of the drive pad 21. Specifically, the position in the lateral direction Y of the drive pad side end 62b with respect to the second end 21b is set such that the capillary for supplying the second drive wire 62 in the wire bonding apparatus is located at the edge on the side of the fourth encapsulation resin side surface 54 of the second end 21b of the drive pad 21. The drive pad side end 62b is arranged in the longitudinal direction X at a portion closer to the semiconductor element 40 than the central part in the longitudinal direction X of the drive pad 21. The drive pad side end 62b is arranged to be on the side of the fourth encapsulation resin side surface 54 rather than the drive electrode side end 62a. The drive pad side end 62b is arranged on the side of the fourth encapsulation resin side surface 54 rather than the semiconductor element 40 in the lateral direction Y. Also, in the present embodiment, the drive pad side end 62b is arranged in the lateral direction Y in alignment with the drive pad side end 61b in the longitudinal direction X. Here, the state where the drive pad side end 62b and the drive pad side end 61b are aligned in the longitudinal direction X means that both drive pad side ends 61b and 62b in the longitudinal direction X overlap each other, including the case where a part overlaps according to the manufacturing error due to wire bonding. In other words, if the amount of deviation in the longitudinal direction X at both drive pad side ends 61b and 62b is within the variation range for performing wire bonding, it can be said that both drive pad side ends 61b and 62b are aligned in the longitudinal direction X.

[0051] The control wire 70 connects the control electrode 43 of the semiconductor element 40 and the control pad 31. The control wire 70 is connected to the control electrode 43 and the control pad 31, for example, by wire bonding. The control wire 70 is made of the same material as the plurality of drive wires 60. The control wire 70 has a control electrode side end portion 71 and a control pad side end portion 72. The control electrode side end portion 71 is the end portion of the control wire 70 that is connected to the control electrode 43. The control pad side end portion 72 is the end portion of the control wire 70 that is connected to the control pad 31. The distance DW3 between the control electrode side end portion 71 of the control wire 70 and the drive electrode side end portion 61a of the first drive wire 61 is smaller than the distance DW1. The distance DY3 between the auxiliary line LS5 along the longitudinal direction X from the control electrode side end portion 71 and the auxiliary line LS6 along the longitudinal direction X from the control pad side end portion 72 is larger than the distance DY1 and smaller than the distance DY2. Note that the magnitude of the distance DY3 can be arbitrarily changed. In one example, the distance DY3 is less than or equal to the distance DY1.

[0052] The operation of this embodiment will be described. In a semiconductor device including a semiconductor element containing SiC, even if the inductance is on the order of nanohenries (nH), the influence on the characteristics of the semiconductor device is significant. For this reason, a configuration capable of reducing the inductance in the semiconductor device is desired.

[0053] Incidentally, the inductance included from the source electrode to the source terminal in the semiconductor device decreases as the width in the plan view of the conductor connecting the source electrode and the source terminal increases. When the conductor is composed of a plurality of drive wires, the width in the plan view of the conductor is defined as the distance between the two drive wires that form the most separated combination among the plurality of drive wires.

[0054] Incidentally, the two drive wires that form the most separated combination among the plurality of drive wires are, if there are two drive wires 60 as in this embodiment, the two drive wires 61 and 62 that form the most separated combination among the plurality of drive wires 60.

[0055] And the first drive wire 61 and the second drive wire 62 are farther apart on the drive pad 21 (source terminal) side than on the main surface side drive electrode 41 (source electrode) side. Specifically, the distance DW2 between the drive pad side end portion 61b and the drive pad end portion 62b is larger than the distance DW1 between the drive electrode side end portion 61a and the drive electrode side end portion 62a. Thereby, compared with the configuration in which the first drive wire 61 and the second drive wire 62 are parallel in plan view, the width of the conductor in plan view can be widened.

[0056] Also, in the present embodiment, the drive electrode side end portion 61a of the first drive wire 61 is connected to a portion of the main surface side drive electrode 41 that is adjacent to the control electrode 43 in the lateral direction Y, and the drive electrode side end portion 62a of the second drive wire 62 is connected to an end portion on the fourth side surface 40f side of the main surface side drive electrode 41 exposed by the opening 45. Thereby, since the distance DW1, which is the minimum value of the distance between the first drive wire 61 and the second drive wire 62, can be made large, the width of the conductor in plan view can be widened.

[0057] According to the semiconductor device 1 of the present embodiment, the following effects can be obtained. (1-1) In plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so as to be farther apart on the drive pad 21 side than on the main surface side drive electrode 41 side. According to this configuration, since the distance between the first drive wire 61 and the second drive wire 62 can be made large, the inductance from the main surface side drive electrode 41 to the drive pad 21 can be reduced. In the present embodiment, as a result, the inductance decreased by 5 to 7 (nH) compared with the configuration in which the first drive wire 61 and the second drive wire 62 are parallel in a state where they are separated by the distance DW1 in plan view. Note that the distance DW1 is the distance between the drive electrode side end portion 61a of the first drive wire 61 and the drive electrode side end portion 62a of the second drive wire 62.

[0058] (1-2) The size of the drive pad 21 in the horizontal direction Y is larger than the size of the opening 45 in the horizontal direction Y. According to this configuration, the distance DW2 between the drive-pad-side end 61b of the first drive wire 61 and the drive-pad-side end 62b of the second drive wire 62 can be made large. Therefore, the inductance from the main-surface-side drive electrode 41 to the drive pad 21 can be reduced.

[0059] (1-3) The drive-pad-side end 61b of the first drive wire 61 is connected to the first end 21a of the drive pad 21, and the drive-pad-side end 62b of the second drive wire 62 is connected to the second end 21b of the drive pad 21. According to this configuration, the distance DW2 between the drive-pad-side end 61b and the drive-pad-side end 62b can be made large. Therefore, the distance between the first drive wire 61 and the second drive wire 62 can be made large, so that the inductance from the main-surface-side drive electrode 41 to the drive pad 21 can be reduced.

[0060] (1-4) The drive-electrode-side end 61a of the first drive wire 61 is connected to the first exposed end 46a of the exposed region 46 of the main-surface-side drive electrode 41, and the drive-electrode-side end 62a of the second drive wire 62 is connected to the second exposed end 46b of the exposed region 46. According to this configuration, the distance DW1 between the drive-electrode-side end 61a and the drive-electrode-side end 62a can be made large. Therefore, the distance between the first drive wire 61 and the second drive wire 62 can be made large, so that the inductance from the main-surface-side drive electrode 41 to the drive pad 21 can be reduced.

[0061] (1-5) The drive-pad-side end 61b of the first drive wire 61 and the drive-pad-side end 62b of the second drive wire 62 are each connected to a portion on the semiconductor element 40 side of the center of the drive pad 21 in the vertical direction X. According to this configuration, the first drive wire 61 and the second drive wire 62 can each be made short, so that the inductance between the main-surface-side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be further reduced.

[0062] (1-6) The first drive wire 61 and the second drive wire 62 are made of the same material. The wire diameter of the first drive wire 61 and the wire diameter of the second drive wire 62 are equal to each other. According to this configuration, since the connection work of the main surface side drive electrodes 41 and the drive pads 21 of each drive wire 61, 62 can be carried out with the same wire, the working process can be simplified.

[0063] (1-7) The plurality of drive wires 60 and the control wire 70 are made of the same material. The wire diameter of the plurality of drive wires 60 and the wire diameter of the control wire 70 are equal to each other. According to this configuration, since the connection work of the main surface side drive electrodes 41 and the drive pads 21 of the plurality of drive wires 60 and the connection work of the control electrodes 43 and the control pads 31 of the control wire 70 can be carried out with the same wire, those working processes can be simplified.

[0064] (Modification Example of the First Embodiment) The semiconductor device 1 of the first embodiment can be modified as follows, for example. Each of the following modification examples can be combined with each other as long as no technical contradiction occurs. In the following modification examples, parts common to the first embodiment are denoted by the same reference numerals as those in the first embodiment, and the description thereof is omitted.

[0065] · The number of drive wires 60 is not limited to two and can be arbitrarily changed. In one example, as shown in FIG. 7, it may be composed of three drive wires, i.e., the first drive wire 61, the second drive wire 62, and the third drive wire 63, as the plurality of drive wires 60. The third drive wire 63 is arranged between the first drive wire 61 and the second drive wire 62. In this case, the first drive wire 61 and the second drive wire 62 constitute the most separated combination among the plurality of drive wires 60.

[0066] That is, when the number of drive wires is three or more, the most separated combination refers to the two drive wires located at the farthest positions. For example, when three or more drive wires are arranged in the lateral direction Y, the most separated combination refers to the combination of the drive wires at both ends in the lateral direction Y.

[0067] The third drive wire 63 has a drive electrode side end portion 63a and a drive pad side end portion 63b. The drive electrode side end portion 63a is an end portion of the third drive wire 63 that is connected to the main surface side drive electrode 41. The drive pad side end portion 63b is an end portion of the third drive wire 63 that is connected to the drive pad 21. The distance DW4 between the drive electrode side end portion 63a and the drive electrode side end portion 61a of the first drive wire 61 is equal to the distance DW5 between the drive electrode side end portion 63a and the drive electrode side end portion 62a of the second drive wire 62. Here, if the deviation amount between the distance DW4 and the distance DW5 is within 5% of the distance DW4, for example, it can be said that the distance DW4 and the distance DW5 are equal to each other. In FIG. 7, the distances DW4 and DW5 are greater than the distance DW3 between the drive electrode side end portion 61a of the first drive wire 61 and the control electrode side end portion 71 of the control wire 70.

[0068] Also in FIG. 7, in the longitudinal direction X, the drive electrode side end portions 61a of the first drive wire 61, the drive electrode side end portions 62a of the second drive wire 62, and the drive electrode side end portion 63a of the third drive wire 63 are arranged in the lateral direction Y in a state where they are aligned with each other. Here, the state where the drive electrode side end portions 61a, 62a, and 63a are aligned with each other in the longitudinal direction X means that the drive electrode side end portions 61a, 62a, and 63a overlap each other in the longitudinal direction X, and includes the case where a part overlaps due to manufacturing errors caused by wire bonding. In other words, if the deviation amount in the longitudinal direction X at the drive electrode side end portions 61a, 62a, and 63a is within the variation range in performing wire bonding, it can be said that the drive electrode side end portions 61a, 62a, and 63a are aligned in the longitudinal direction X.

[0069] The drive pad side end 63b of the third drive wire 63 is arranged in the longitudinal direction X at a portion closer to the semiconductor element 40 than the central portion of the drive pad 21 in the longitudinal direction X. The distance DW6 between the drive pad side end 61b of the first drive wire 61 and the drive pad side end 63b is larger than the distance DW4. The distance DW7 between the drive pad side end 62b of the second drive wire 62 and the drive pad side end 63b is larger than the distance DW5. In FIG. 7, the distance DW6 is equal to the distance DW7. Here, if the deviation amount between the distance DW6 and the distance DW7 is within, for example, 5% of the distance DW6, it can be said that the distance DW6 and the distance DW7 are equal to each other.

[0070] The first drive wire 61 and the third drive wire 63 are connected to the main surface side drive electrode 41 and the drive pad 21 such that they are farther apart on the drive pad 21 side than on the main surface side drive electrode 41 side. In a plan view, the interval between the first drive wire 61 and the third drive wire 63 gradually widens as it goes from the main surface side drive electrode 41 toward the drive pad 21. The third drive wire 63 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 such that they are farther apart on the drive pad 21 side than on the main surface side drive electrode 41 side. In a plan view, the interval between the third drive wire 63 and the second drive wire 62 gradually widens as it goes from the main surface side drive electrode 41 toward the drive pad 21. Note that the position of the drive pad side end 63b with respect to the drive pad 21 can be arbitrarily changed. In one example, the drive pad side end 63b may be connected to the drive pad 21 such that the distance DW6 becomes smaller than the distance DW7.

[0071] · The size of the semiconductor element 40 can be arbitrarily changed. In one example, as shown in FIG. 8, the size of the semiconductor element 40 may be made larger than the size of the semiconductor element 40 in the first embodiment. In FIG. 8, the size in the longitudinal direction X and the size in the lateral direction Y of the semiconductor element 40 are each larger than the size of the semiconductor element 40 in the first embodiment. Further, as the size of the semiconductor element 40 increases, the sizes of the main surface side drive electrode 41 and the opening 45 formed on the surface 40a can be increased in the longitudinal direction X and the lateral direction Y, respectively. In FIG. 8, the size of the opening 45 in the lateral direction Y is larger than the size of the drive pad 21 in the lateral direction Y.

[0072] The semiconductor element 40 is disposed at the center of the inner main body portion 12. Specifically, in a plan view, the first distance D1 between the semiconductor element 40 and the edge of the first flange portion 19a of the inner main body portion 12 on the side of the second sealing resin side surface 52, the second distance D2 between the semiconductor element 40 and the narrow portion 14 of the inner main body portion 12, the third distance D3 between the semiconductor element 40 and the edge of the second flange portion 19b of the inner main body portion 12 on the side of the third sealing resin side surface 53, and the fourth distance D4 between the semiconductor element 40 and the edge of the third flange portion 19c of the inner main body portion 12 on the side of the fourth sealing resin side surface 54 are equal to each other. Here, if the maximum deviation amount of the first distance D1, the second distance D2, the third distance D3, and the fourth distance D4 is within 5% of the first distance D1, for example, it can be said that the first distance D1, the second distance D2, the third distance D3, and the fourth distance D4 are equal to each other.

[0073] Similar to the first embodiment, the semiconductor device 1 has a first drive wire 61 and a second drive wire 62 as a plurality of drive wires 60. The drive electrode side end portion 61a of the first drive wire 61 is connected to the first exposed end portion 46a of the exposed region 46 of the main surface side drive electrode 41, similar to the drive electrode side end portion 61a of the first embodiment. The drive pad side end portion 61b of the first drive wire 61 is connected to the first end portion 21a of the drive pad 21, similar to the drive pad side end portion 61b of the first embodiment. The drive electrode side end portion 62a of the second drive wire 62 is connected to the second exposed end portion 46b of the exposed region 46 of the main surface side drive electrode 41, similar to the drive electrode side end portion 62a of the first embodiment. The drive pad side end portion 62b of the second drive wire 62 is connected to the second end portion 21b of the drive pad 21, similar to the drive pad side end portion 62b of the first embodiment. Also, similar to the first embodiment, in the vertical direction X, the drive electrode side end portion 61a and the drive electrode side end portion 62a are arranged in the horizontal direction Y in a state where they are aligned with each other. The drive pad side end portion 61b and the drive pad side end portion 62b are each connected to a portion on the semiconductor element 40 side of the center portion of the drive pad 21 in the vertical direction X in the vertical direction X.

[0074] In a plan view, the distance DW2 between the drive pad side end portion 61b and the drive pad side end portion 62b is smaller than the distance DW1 between the drive electrode side end portion 61a and the drive electrode side end portion 62a. In FIG. 8, the distance DY1 in the horizontal direction Y between the auxiliary line LS1 along the vertical direction X from the drive electrode side end portion 61a and the auxiliary line LS2 along the vertical direction X from the drive pad side end portion 61b is larger than the distance DY2 in the horizontal direction Y between the auxiliary line LS3 along the vertical direction X from the drive electrode side end portion 62a and the auxiliary line LS4 along the vertical direction X from the drive pad side end portion 62b. Also, in a plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 such that they approach each other more on the drive pad 21 side than on the main surface side drive electrode 41 side. Further, in a plan view, the interval between the first drive wire 61 and the second drive wire 62 gradually becomes narrower as it goes from the main surface side drive electrode 41 toward the drive pad 21.

[0075] According to this configuration, since the distance between the first drive wire 61 and the second drive wire 62 can be increased, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be reduced.

[0076] Note that the relationship between the distance DW1 and the distance DW2 can be arbitrarily changed. In one example, the distance DW1 may be equal to the distance DW2. In this case, in a plan view, the first drive wire 61 is parallel to the second drive wire 62.

[0077] · In the modification example of FIG. 8, the number of drive wires 60 is not limited to two and can be arbitrarily changed. In one example, as shown in FIG. 9, it may be composed of three drive wires, i.e., a first drive wire 61, a second drive wire 62, and a third drive wire 63, as the plurality of drive wires 60. The third drive wire 63 is disposed between the first drive wire 61 and the second drive wire 62. In this case, the first drive wire 61 and the second drive wire 62 form the most separated combination among the plurality of drive wires 60. The third drive wire 63 has a drive electrode side end portion 63a and a drive pad side end portion 63b. The distance DW4 between the drive electrode side end portion 63a and the drive electrode side end portion 61a of the first drive wire 61 is equal to the distance DW5 between the drive electrode side end portion 63a and the drive electrode side end portion 62a of the second drive wire 62. Here, if the deviation amount between the distance DW4 and the distance DW5 is within 5% of the distance DW4, it can be said that the distance DW4 and the distance DW5 are equal to each other.

[0078] Also in FIG. 9, similar to the semiconductor device 1 in FIG. 7, in the vertical direction X, the drive electrode side end portions 61a of the first drive wire 61, the drive electrode side end portions 62a of the second drive wire 62, and the drive electrode side end portions 63a of the third drive wire 63 are arranged in an aligned state with each other.

[0079] The drive pad side end portion 63b of the third drive wire 63 is arranged in the longitudinal direction X at a portion closer to the semiconductor element 40 side than the central portion of the drive pad 21 in the longitudinal direction X. The distance DW6 between the drive pad side end portion 61b of the first drive wire 61 and the drive pad side end portion 63b is smaller than the distance DW4. The distance DW7 between the drive pad side end portion 62b of the second drive wire 62 and the drive pad side end portion 63b is equal to the distance DW5. Here, if the deviation amount between the distance DW7 and the distance DW5 is within 5% of the distance DW7, for example, it can be said that the distance DW7 is equal to the distance DW5.

[0080] In a plan view, the first drive wire 61 and the third drive wire 63 are connected to the main surface side drive electrode 41 and the drive pad 21 such that they approach each other more on the drive pad 21 side than on the main surface side drive electrode 41 side. In a plan view, the interval between the first drive wire 61 and the third drive wire 63 gradually narrows as it goes from the main surface side drive electrode 41 toward the drive pad 21. The third drive wire 63 is parallel to the second drive wire 62.

[0081] · The arrangement position of the semiconductor element 40 with respect to the inner main body portion 12 can be arbitrarily changed. In the first example, as shown in FIG. 10, the semiconductor element 40 may be arranged at a portion closer to the second encapsulation resin side surface 52 of the inner main body portion 12. Specifically, the first distance D1 between the semiconductor element 40 and the edge of the first flange portion 19a of the inner main body portion 12 on the second encapsulation resin side surface 52 side is smaller than the second distance D2 between the semiconductor element 40 and the narrow width portion 14 of the inner main body portion 12.

[0082] In the lateral direction Y, the semiconductor element 40 is arranged at the central portion of the inner main body portion 12. Specifically, the third distance D3 between the semiconductor element 40 and the edge of the second flange portion 19b of the inner main body portion 12 on the third encapsulation resin side surface 53 side is equal to the fourth distance D4 between the semiconductor element 40 and the edge of the third flange portion 19c of the inner main body portion 12 on the fourth encapsulation resin side surface 54 side. Here, if the deviation amount between the third distance D3 and the fourth distance D4 is within 5% of the third distance D3, for example, it can be said that the third distance D3 is equal to the fourth distance D4.

[0083] According to such a configuration, since the distance between the opening 45 of the semiconductor element 40 and the drive pad 21 is reduced, the first drive wire 61 and the second drive wire 62 can be shortened respectively. Therefore, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be further reduced.

[0084] In the second example, as shown in FIG. 11, the semiconductor element 40 may be disposed at a portion closer to the second sealing resin side surface 52 and closer to the fourth sealing resin side surface 54 in the inner main body portion 12. Specifically, a first distance D1 between the semiconductor element 40 and an edge on the second sealing resin side surface 52 side of the first flange portion 19a in the inner main body portion 12 is smaller than a second distance D2 between the semiconductor element 40 and the narrow portion 14 of the inner main body portion 12. Further, a third distance D3 between the semiconductor element 40 and an edge on the third sealing resin side surface 53 side of the second flange portion 19b in the inner main body portion 12 is larger than a fourth distance D4 between the semiconductor element 40 and an edge on the fourth sealing resin side surface 54 side of the third flange portion 19c in the inner main body portion 12.

[0085] According to such a configuration, since the distance between the opening 45 of the semiconductor element 40 and the drive pad 21 is further reduced, the first drive wire 61 and the second drive wire 62 can be further shortened respectively. Therefore, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be further reduced.

[0086] · The lead portion 16 may be omitted from the substrate 10 of the semiconductor device 1 of the first embodiment. In this case, in the lateral direction Y, the drive pad 21 and the control pad 31 are adjacent to each other. Further, the size of the drive pad 21 in the lateral direction Y may be increased by the amount of the lead portion 16 omitted. According to this configuration, since the distance DW2 between the drive pad side end portion 61b of the first drive wire 61 and the drive pad side end portion 62b of the second drive wire 62 can be increased, the inductance from the main surface side drive electrode 41 to the drive pad 21 can be reduced.

[0087] (Second Embodiment) Referring to FIGS. 12 to 21, a second embodiment of the semiconductor device 1 will be described. The semiconductor device 1 of this embodiment is different from the semiconductor device 1 of the first embodiment in that the shapes of the substrate 10, the drive lead 20, the control lead 30, and the encapsulation resin 50 are different, and a sense lead 80 is added. In this embodiment, for convenience, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof may be omitted.

[0088] As shown in FIG. 12, the semiconductor device 1 of this embodiment is a package with an outer package standard (JEITA standard) of TO-263. Specifically, the vertical dimension L1 of the semiconductor device 1 is 14.7 mm to 15.5 mm, the horizontal dimension L2 is 10.06 mm to 10.26 mm, and the thickness dimension L3 is 4.40 mm to 4.70 mm. Also, the semiconductor device 1 is of the SIP type. Thus, the size of the semiconductor device 1 of this embodiment is larger than the size of the semiconductor device 1 of the first embodiment.

[0089] As shown in FIG. 12, the shape of the encapsulation resin 50 is a rectangular parallelepiped. The encapsulation resin 50 is formed by mold molding. Each side surface 51 to 54 of the encapsulation resin 50 is provided with an inclined surface inclined with respect to the thickness direction Z in order to provide a draft angle that facilitates the removal of the mold during the molding of the encapsulation resin 50. Specifically, each side surface 51 to 54 has a first inclined surface provided with a draft angle that facilitates the removal of the upper mold of the mold and a second inclined surface provided with a draft angle that facilitates the removal of the lower mold of the mold. The upper mold of the mold forms the top surface 56 of the encapsulation resin and the portion of each side surface 51 to 54 on the side of the top surface 56 of the encapsulation resin. The lower mold forms the back surface 55 of the encapsulation resin and the portion of each side surface 51 to 54 on the side of the back surface 55 of the encapsulation resin. An inclined surface 57 having a larger inclination angle than the draft angle is formed between the first side surface 51 of the encapsulation resin and the top surface 56 of the encapsulation resin.

[0090] At both ends of the encapsulating resin 50 in the lateral direction Y, recesses 58 are formed. The recess 58 on the third encapsulating resin side surface 53 side of the encapsulating resin 50 is recessed in a curved shape in the lateral direction Y from the third encapsulating resin side surface 53. The recess 58 on the fourth encapsulating resin side surface 54 side of the encapsulating resin 50 is recessed in a curved shape in the lateral direction Y from the fourth encapsulating resin side surface 54. The recess 58 is formed from the top surface 56 of the encapsulating resin to the main surface 10a of the substrate 10. That is, a part of the main surface 10a of the substrate 10 is exposed by the recess 58. The recess 58 is provided closer to the second encapsulating resin side surface 52 than the center of the encapsulating resin 50 in the longitudinal direction X.

[0091] FIG. 13 is a view of the semiconductor device 1 as seen from the top surface 56 of the encapsulating resin in the thickness direction Z. In FIG. 13, for convenience, the encapsulating resin 50 is shown by a two-dot chain line, and the components inside the encapsulating resin 50 are shown by solid lines. As shown in FIG. 13, in a plan view, the shape of the encapsulating resin 50 is a rectangular shape in which the lateral direction Y is the long side direction and the longitudinal direction X is the short side direction.

[0092] As shown in FIGS. 12 and 13, the substrate 10 can be divided into an inner main body portion 12 disposed inside the encapsulating resin 50 and a protruding portion 13 protruding from the encapsulating resin 50. The inner main body portion 12 and the protruding portion 13 are adjacent to each other in the longitudinal direction X. The substrate 10 is formed of, for example, aluminum (Al) or copper (Cu).

[0093] At the end of the inner main body portion 12 on the protruding portion 13 side, a first wide portion 12f is formed. The size of the first wide portion 12f in the lateral direction Y is larger than the size of the portion other than the first wide portion 12f in the inner main body portion 12 in the lateral direction Y. The first wide portion 12f is provided adjacent to the first encapsulating resin side surface 51 of the encapsulating resin 50 in the longitudinal direction X.

[0094] At the end of the inner main body portion 12 on the second encapsulating resin side surface 52 side, a second wide portion 12g is formed. The size of the second wide portion 12g in the lateral direction Y is larger than the size of the portion other than the first wide portion 12f in the inner main body portion 12 in the lateral direction Y. Also, the size of the second wide portion 12g in the lateral direction Y is smaller than the size of the first wide portion 12f in the lateral direction Y.

[0095] The protruding portion 13 protrudes in the longitudinal direction X from the side surface 51 of the first sealing resin. In the present embodiment, the size of the protruding portion 13 in the lateral direction Y is equal to the size of the first wide portion 12f of the inner main body portion 12 in the lateral direction Y. Note that the size of the protruding portion 13 in the lateral direction Y can be arbitrarily changed. In one example, the size of the protruding portion 13 in the lateral direction Y may be smaller than the size of the first wide portion 12f of the inner main body portion 12 in the lateral direction Y.

[0096] The inner main body portion 12 is provided with a plurality of flange portions 19 protruding from the main body side surface of the inner main body portion 12. In the present embodiment, the inner main body portion 12 and the plurality of flange portions 19 are an integrated single part.

[0097] The plurality of flange portions 19 include a first flange portion 19a, a second flange portion 19b, and a third flange portion 19c. The first flange portion 19a protrudes from the first side surface 12c of the inner main body portion 12 toward the second sealing resin side surface 52. The first flange portion 19a constitutes a part of the second wide portion 12g. The second flange portion 19b protrudes from the second side surface 12d of the inner main body portion 12 toward the third sealing resin side surface 53. A part of the second flange portion 19b constitutes a part of the second wide portion 12g. The third flange portion 19c protrudes from the third side surface 12e of the inner main body portion 12 toward the fourth sealing resin side surface 54. The third flange portion 19c constitutes a part of the second wide portion 12g.

[0098] The first flange portion 19a, the second flange portion 19b, and the third flange portion 19c are each provided so as to be flush with the main surface 12a of the inner main body portion 12. For this reason, the main surface 10a of the substrate 10 is composed of the main surface 12a of the inner main body portion 12, the first flange portion 19a, the second flange portion 19b, and the third flange portion 19c. Further, the first flange portion 19a, the second flange portion 19b, and the third flange portion 19c are each provided on the main surface 12a side rather than the back surface 12b (see FIG. 13) of the inner main body portion 12. For this reason, the back surface 10b (see FIG. 13) of the substrate 10 is composed of the back surface 12b of the inner main body portion 12. According to such a configuration of each of the flange portions 19a to 19c, separation between the substrate 10 and the sealing resin 50 can be suppressed.

[0099] As shown in FIG. 14, the back surface 10b (the back surface 12b of the inner main body portion 12) of the substrate 10 is exposed from the back surface 55 of the sealing resin. Specifically, the back surface 12b of a part of the first wide portion 12f and a portion other than the second wide portion 12g of the inner main body portion 12 is exposed from the back surface 55 of the sealing resin. Thereby, the heat dissipation property of the substrate 10 can be improved. Further, the back surface 10b of the substrate 10 and the back surface 55 of the sealing resin 50 of the sealing resin are flush.

[0100] As shown in FIG. 13, in a plan view, on the second sealing resin side surface 52 side of the sealing resin 50 rather than the substrate 10, the drive lead 20, the control lead 30, and the sense lead 80 are arranged. In the present embodiment, in a plan view, the edges on the first sealing resin side surface 51 side of each of the drive lead 20, the control lead 30, and the sense lead 80 overlap the edge on the second sealing resin side surface 52 side of the inner main body portion 12. The drive lead 20, the control lead 30, and the sense lead 80 are arranged spaced apart from each other in the lateral direction Y. A sense lead 80 is arranged between the drive lead 20 and the control lead 30 in the lateral direction Y.

[0101] The drive lead 20 has a drive pad 21, a plurality of drive terminals 22, and a plurality of connecting portions 23 that connect the drive pad 21 and the plurality of drive terminals 22. In a plan view, the shape of the drive pad 21 is a substantially rectangular shape in which the lateral direction Y is the long side direction and the longitudinal direction X is the short side direction. The first end portion 21a of the drive pad 21 is located closer to the third encapsulation resin side surface 53 than the central portion in the lateral direction Y of the inner main body portion 12. When viewed from the longitudinal direction X, the second end portion 21b of the drive pad 21 is provided so as to overlap with the end portion on the fourth encapsulation resin side surface 54 side of the inner main body portion 12. Thus, the size of the drive pad 21 in the lateral direction Y is larger than half of the size of the inner main body portion 12 in the lateral direction Y. As shown in FIG. 12, the drive pad 21 is located on the encapsulation resin top surface 56 side rather than the main surface 10a of the substrate 10 in the thickness direction Z. Further, the drive pad 21 is located on the encapsulation resin top surface 56 side rather than the semiconductor element 40 in the thickness direction Z.

[0102] As shown in FIG. 13, in the present embodiment, the plurality of drive terminals 22 includes five drive terminals of drive terminals 22a, 22b, 22c, 22d, and 22e. The plurality of connection portions 23 includes five connection portions of connection portions 23a, 23b, 23c, 23d, and 23e. The drive terminals 22a to 22e are arranged spaced apart from each other in the lateral direction Y. The drive terminals 22a to 22e are arranged in the order of drive terminals 22a, 22b, 22c, 22d, and 22e from the first end portion 21a to the second end portion 21b of the drive pad 21. The connection portions 23a to the connection portions 23e are arranged spaced apart from each other in the lateral direction Y. The connection portion 23a connects the drive pad 21 and the drive terminal 22a, the connection portion 23b connects the drive pad 21 and the drive terminal 22b, the connection portion 23c connects the drive pad 21 and the drive terminal 22c, the connection portion 23d connects the drive pad 21 and the drive terminal 22d, and the connection portion 23e connects the drive pad 21 and the drive terminal 22e.

[0103] As shown in FIG. 13, the drive terminals 22a to 22e, the control terminal 32, and the sense terminal 82 described later have an equal pitch. The drive terminal 22a is arranged so as to include a portion closer to the third encapsulation resin side surface 53 than the first end portion 21a of the drive pad 21. The drive terminal 22a is arranged closer to the third encapsulation resin side surface 53 than the central portion in the lateral direction Y of the inner main body portion 12.

[0104] The drive terminal 22b is arranged to be at the same position as the central portion in the lateral direction Y of the inner main body portion 12. Specifically, a virtual line LV1 along the longitudinal direction X at the central portion in the lateral direction Y of the drive terminal 22b coincides with a virtual line LV2 along the longitudinal direction X at the central portion in the lateral direction Y of the inner main body portion 12. The drive terminals 22c to 22e are arranged to be on the side of the fourth sealing resin side surface 54 rather than the central portion in the lateral direction Y of the inner main body portion 12. In the present embodiment, the drive terminals 22d and 22e are arranged to be on the side of the fourth sealing resin side surface 54 rather than the semiconductor element 40. The drive terminals 22a, 22c to 22e have the same shape as each other. The drive terminal 22b is shorter than the drive terminals 22a, 22c to 22e.

[0105] The control lead 30 is arranged to overlap with the end portion on the side of the third sealing resin side surface 53 of the inner main body portion 12 when viewed from the longitudinal direction X. The control lead 30 is arranged to be on the side of the third sealing resin side surface 53 rather than the semiconductor element 40.

[0106] As shown in FIG. 12, the control pad 31 is located on the side of the sealing resin top surface 56 rather than the main surface 10a of the substrate 10 in the thickness direction Z. Also, the control pad 31 is located on the side of the sealing resin top surface 56 rather than the semiconductor element 40 in the thickness direction Z. As shown in FIG. 13, the shape of the control pad 31 in plan view is a substantially rectangular shape in which the longitudinal direction X is the long side direction and the lateral direction Y is the short side direction. The size of the control pad 31 in the lateral direction Y is smaller than the size of the drive pad 21 in the lateral direction Y. For this reason, the size of the drive pad 21 in the lateral direction Y can be increased. The control terminal 32 of the control lead 30 constitutes a gate terminal. The control terminal 32 has the same shape as the drive terminals 22a, 22c to 22e.

[0107] The sense lead 80 is a lead for electrically connecting the control electrode 43 (gate electrode) and the main surface side drive electrode 41 (source electrode) in the present embodiment. In plan view, the sense lead 80 is disposed on the third encapsulation resin side surface 53 side rather than the semiconductor element 40. The sense lead 80 has a sense pad 81, a sense terminal 82, and a connecting portion 83 that connects the sense pad 81 and the sense terminal 82.

[0108] The sense pad 81 is disposed at a distance from the semiconductor element 40 in the longitudinal direction X. The sense pad 81 is disposed between the substrate 10 and the second encapsulation resin side surface 52 in the longitudinal direction X. The sense pad 81 is disposed between the drive pad 21 and the control pad 31 in the lateral direction Y. The shape of the sense pad 81 in plan view is a substantially rectangular shape in which the longitudinal direction X is the long side direction and the lateral direction Y is the short side direction. The size of the sense pad 81 in the lateral direction Y is equal to the size of the control pad 31 in the lateral direction Y. That is, the size of the sense pad 81 in the lateral direction Y is smaller than the size of the drive pad 21 in the lateral direction Y. For this reason, the size of the drive pad 21 in the lateral direction Y can be increased. As shown in FIG. 12, the sense pad 81 is located on the encapsulation resin top surface 56 side rather than the main surface 10a of the substrate 10 in the thickness direction Z. Further, the sense pad 81 is located on the encapsulation resin top surface 56 side rather than the semiconductor element 40 in the thickness direction Z. Note that the size of the sense pad 81 in the lateral direction Y and the size of the control pad 31 in the lateral direction Y can each be arbitrarily changed. In one example, the size of the sense pad 81 in the lateral direction Y may be smaller than the size of the control pad 31 in the lateral direction Y.

[0109] As shown in FIG. 13, the connecting portion 83 is continuous from the end portion of the sense pad 81 on the second encapsulation resin side surface 52 side in the longitudinal direction X. The connecting portion 83 is located at the end portion of the sense pad 81 on the third encapsulation resin side surface 53 side in the lateral direction Y. The sense terminal 82 protrudes from the second encapsulation resin side surface 52. The sense terminal 82 has the same shape as the drive terminals 22a, 22c to 22e and the control terminal 32.

[0110] Similar to the first embodiment, the semiconductor element 40 uses a SiCMOSFET. Also, similar to the first embodiment, the semiconductor element 40 is an element capable of high-speed switching in response to a drive signal having a frequency of 1 kHz or more and several hundreds kHz or less. Preferably, the semiconductor element 40 is an element capable of high-speed switching in response to a drive signal having a frequency of 1 kHz or more and 100 kHz or less. In this embodiment, the semiconductor element 40 performs high-speed switching in response to a drive signal having a frequency of 100 kHz. The shape and size of the semiconductor element 40 are the same as those of the semiconductor element 40 in the first embodiment.

[0111] In the vertical direction X, the semiconductor element 40 is disposed closer to the second encapsulation resin side surface 52 than the inner main body portion 12. Specifically, in a plan view, a first distance D1 between an edge on the second encapsulation resin side surface 52 side of the first flange portion 19a of the semiconductor element 40 and the inner main body portion 12 in the vertical direction X is smaller than a second distance D2 between the semiconductor element 40 and the first wide portion 12f of the inner main body portion 12 in the vertical direction X.

[0112] In the lateral direction Y, the semiconductor element 40 is disposed at the center of the inner main body portion 12. Specifically, a third distance D3 between an edge on the third encapsulation resin side surface 53 side of the second flange portion 19b of the semiconductor element 40 and the inner main body portion 12 in the lateral direction Y is equal to a fourth distance D4 between an edge on the fourth encapsulation resin side surface 54 side of the third flange portion 19c of the semiconductor element 40 and the inner main body portion 12 in the lateral direction Y. Here, if the deviation amount between the third distance D3 and the fourth distance D4 is within 5% of the third distance D3, for example, it can be said that the third distance D3 and the fourth distance D4 are equal to each other.

[0113] The semiconductor device 1 includes a plurality of drive wires 60, a control wire 70, and a sense wire 90. In the present embodiment, the plurality of drive wires 60 are composed of two drive wires, a first drive wire 61 and a second drive wire 62. That is, the first drive wire 61 and the second drive wire 62 form the most separated combination among the plurality of drive wires 60. The first drive wire 61 and the second drive wire 62 are arranged spaced apart in the lateral direction Y. The first drive wire 61 and the second drive wire 62 are drive wires at both ends in the lateral direction Y among the plurality of drive wires 60. The control wire 70, the first drive wire 61, and the second drive wire 62 are arranged spaced apart in the lateral direction Y. The first drive wire 61 is arranged on the control wire 70 side with respect to the second drive wire 62.

[0114] The first drive wire 61 and the second drive wire 62 are made of the same metal. In the present embodiment, the first drive wire 61 and the second drive wire 62 contain aluminum. The wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62. Here, if the deviation amount between the wire diameter of the first drive wire 61 and the wire diameter of the second drive wire 62 is within 5% of the wire diameter of the first drive wire 61, for example, it can be said that the wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62. In the present embodiment, the wire diameters of the first drive wire 61 and the second drive wire 62 are equal to the wire diameter of the control wire 70. Here, if the deviation amount between the wire diameters of the first drive wire 61 and the second drive wire 62 and the wire diameter of the control wire 70 is within 5% of the wire diameter of the control wire 70, for example, it can be said that the wire diameters of the first drive wire 61 and the second drive wire 62 are equal to the wire diameter of the control wire 70. The first drive wire 61 and the second drive wire 62 are each connected to the main surface side drive electrode 41 and the drive pad 21 by, for example, wire bonding.

[0115] In a plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 such that they are farther away from the main surface side drive electrode 41 side than the drive pad 21 side. In a plan view, the distance between the first drive wire 61 and the second drive wire 62 widens as it goes from the main surface side drive electrode 41 toward the drive pad 21 side. Hereinafter, the configuration of the first drive wire 61 and the second drive wire 62 will be described in detail.

[0116] As shown in FIG. 15, in a plan view, the distance DW2 between the drive pad side end portion 61b of the first drive wire 61 and the drive pad side end portion 62b of the second drive wire 62 is larger than the distance DW1 between the drive electrode side end portion 61a of the first drive wire 61 and the drive electrode side end portion 62a of the second drive wire 62. In the present embodiment, the drive pad side end portion 61b is disposed closer to the third sealing resin side surface 53 side than the drive electrode side end portion 61a in the lateral direction Y. The drive pad side end portion 62b is disposed closer to the fourth sealing resin side surface 54 side than the drive electrode side end portion 62a in the lateral direction Y. Thus, in a plan view, the inclination direction of the first drive wire 61 with respect to the longitudinal direction X is opposite to the inclination direction of the second drive wire 62 with respect to the longitudinal direction X.

[0117] Let the distance in the lateral direction Y between the auxiliary line LS1 along the longitudinal direction X from the drive electrode side end portion 61a and the auxiliary line LS2 along the longitudinal direction X from the drive pad side end portion 61b be the distance DY1, and let the distance in the lateral direction Y between the auxiliary line LS3 along the longitudinal direction X from the drive electrode side end portion 62a and the auxiliary line LS4 along the longitudinal direction X from the drive pad side end portion 62b be the distance DY2. In this case, the distance DY2 is larger than the distance DY1.

[0118] The drive electrode side end portion 61a of the first drive wire 61 is connected to the first exposed end portion 46a side rather than the central portion in the lateral direction Y of the exposed region 46 of the main surface side drive electrode 41. In the present embodiment, it is connected to the central portion side of the exposed region 46 rather than the first exposed end portion 46a of the exposed region 46 of the main surface side drive electrode 41 in the lateral direction Y. In other words, the drive electrode side end portion 61a is connected to a portion of the exposed region 46 that is separated from the control electrode 43, that is, a portion separated from the bottom of the recess 41a of the main surface side drive electrode 41. Further, the drive electrode side end portion 61a overlaps with the connection portion 23b of the drive lead 20 when viewed from the longitudinal direction X.

[0119] The drive pad side end portion 61b of the first drive wire 61 is connected to the first end portion 21a side rather than the central portion in the lateral direction Y of the drive pad 21. In the present embodiment, the drive pad side end portion 61b is connected to the first end portion 21a of the drive pad 21. The drive pad side end portion 61b is connected to a portion of the drive pad 21 on the third encapsulation resin side surface 53 side rather than the connection portion 23b in the lateral direction Y. In the present embodiment, the drive pad side end portion 61b overlaps with the connection portion 23a of the drive lead 20 when viewed from the longitudinal direction X. The drive pad side end portion 61b is connected to a portion on the semiconductor element 40 side rather than the central portion in the longitudinal direction X of the drive pad 21 in the longitudinal direction X.

[0120] Note that the drive pad side end portion 61b may be connected to the first end portion 21a so as to be the limit position on the third encapsulation resin side surface 53 side in the region where wire bonding can be performed as the first end portion 21a of the drive pad 21 in the lateral direction Y.

[0121] The drive electrode side end portion 62a of the second drive wire 62 is connected to the second exposed end portion 46b side rather than the central portion in the lateral direction Y of the exposed region 46 of the main surface side drive electrode 41. In the present embodiment, the drive electrode side end portion 62a is connected to the second exposed end portion 46b of the exposed region 46. In the present embodiment, the drive electrode side end portion 62a overlaps the portion between the connecting portion 23b and the connecting portion 23c in the lateral direction Y when viewed from the longitudinal direction X. In one example, the position of the drive electrode side end portion 62a with respect to the exposed region 46 is set such that the drive electrode side end portion 62a becomes the limit position on the fourth side surface 40f side of the region where wire bonding can be performed as the second exposed end portion 46b of the exposed region 46 in the lateral direction Y. In the longitudinal direction X, the drive electrode side end portion 62a is arranged so as to be aligned with the drive electrode side end portion 61a of the first drive wire 61. Note that the state where the drive electrode side end portion 62a and the drive electrode side end portion 61a are aligned in the longitudinal direction X includes the case where both drive electrode side end portions 61a and 62a overlap each other in the longitudinal direction X and the case where a part overlaps according to the manufacturing error due to wire bonding. In other words, if the deviation amount in the longitudinal direction X at both drive electrode side end portions 61a and 62a is within the variation range for performing wire bonding, it can be said that both drive electrode side end portions 61a and 62a are aligned in the longitudinal direction X.

[0122] The drive pad side end portion 62b of the second drive wire 62 is connected to the second end portion 21b side rather than the central portion in the lateral direction Y of the drive pad 21. In the present embodiment, the drive pad side end portion 62b is connected to the second end portion 21b of the drive pad 21. The drive pad side end portion 62b is arranged so as to be on the fourth sealing resin side surface 54 side rather than the semiconductor element 40. In the present embodiment, the drive pad side end portion 62b overlaps the connecting portion 23e when viewed from the longitudinal direction X. Note that the position of the drive pad side end portion 62b with respect to the drive pad 21 may be set such that the drive pad side end portion 62b becomes the limit position on the fourth sealing resin side surface 54 side of the region where wire bonding can be performed as the second end portion 21b of the drive pad 21. The drive pad side end portion 62b is connected to the portion on the semiconductor element 40 side rather than the central portion in the longitudinal direction X of the drive pad 21 in the longitudinal direction X.

[0123] The control wire 70 connects the control electrode 43 of the semiconductor element 40 and the control pad 31. The control wire 70 is connected to the control electrode 43 and the control pad 31, for example, by wire bonding. Similar to the first embodiment, the same material as that of the plurality of drive wires 60 is used for the control wire 70. The wire diameter of the control wire 70 is equal to the wire diameters of the first drive wire 61 and the second drive wire 62. Here, if the deviation amount between the wire diameter of the control wire 70 and the wire diameters of the first drive wire 61 and the second drive wire 62 is within 5% of the wire diameter of the control wire 70, it can be said that the wire diameter of the control wire 70 is equal to the wire diameters of the first drive wire 61 and the second drive wire 62.

[0124] The control wire 70 has a control electrode side end portion 71 and a control pad side end portion 72. The distance DW3 between the control electrode side end portion 71 and the drive electrode side end portion 61a of the first drive wire 61 is smaller than the distance DW1. The distance DY3 between the auxiliary line LS5 along the longitudinal direction X from the control electrode side end portion 71 and the auxiliary line LS6 along the longitudinal direction X from the control pad side end portion 72 is larger than the distance DY1 and slightly smaller than the distance DY2. Note that the distance DY3 can be arbitrarily changed. In one example, the distance DY3 may be equal to or greater than the distance DY2.

[0125] The sense wire 90 connects the main surface side drive electrode 41 of the semiconductor element 40 and the sense pad 81. The sense wire 90 is connected to the main surface side drive electrode 41 and the sense pad 81, for example, by wire bonding. The same material as that of the first drive wire 61, the second drive wire 62, and the control wire 70 is used for the sense wire 90. The wire diameter of the sense wire 90 is, for example, equal to the wire diameter of the control wire 70. Here, if the deviation amount between the wire diameter of the sense wire 90 and the wire diameter of the control wire 70 is within 5% of the wire diameter of the sense wire 90, it can be said that the wire diameter of the sense wire 90 is equal to the wire diameter of the control wire 70.

[0126] The sense wire 90 has a drive electrode side end 91 and a sense pad side end 92. The drive electrode side end 91 is an end of the sense wire 90 that is connected to the main surface side drive electrode 41. The sense pad side end 92 is an end of the sense wire 90 that is connected to the sense pad 81. The sense pad side end 92 is disposed closer to the third sealing resin side surface 53 than the drive electrode side end 91 in the lateral direction Y.

[0127] The drive electrode side end 91 is connected to a portion between the drive electrode side end 61a of the first drive wire 61 and the control electrode 43 of the main surface side drive electrode 41 in the lateral direction Y. The distance DW8 between the drive electrode side end 91 and the drive electrode side end 61a of the first drive wire 61 is smaller than the distance DW9 between the drive electrode side end 91 and the control electrode side end 71 of the control wire 70.

[0128] The distance DY4 between the auxiliary line LS7 along the longitudinal direction X from the drive electrode side end 91 and the auxiliary line LS8 along the longitudinal direction X from the sense pad side end 92 is larger than the distance DY1 and smaller than the distance DY2. Also, the distance DY4 is smaller than the distance DY3.

[0129] According to the semiconductor device 1 of the present embodiment, in addition to the effects similar to those of (1-1) to (1-7) of the first embodiment, the following effects can be obtained. (2-1) The semiconductor device 1 includes a sense lead 80 and a sense wire 90 for electrically connecting the main surface side drive electrode 41 (source electrode) and the control electrode 43 (gate electrode) of the semiconductor element 40. According to this configuration, even if the voltage of the main surface side drive electrode 41 fluctuates, the voltage of the control electrode 43 fluctuates following it, so that the fluctuation of the voltage between the source and gate of the semiconductor element 40 is suppressed. Therefore, the fluctuation of the threshold voltage of the semiconductor element 40 can be suppressed.

[0130] (2-2) The semiconductor element 40 is positioned closer to the second sealing resin side surface 52 with respect to the inner main body portion 12 of the substrate 10. According to this configuration, since the distance between the opening 45 of the semiconductor element 40 and the drive pad 21 can be shortened, the lengths of the first drive wire 61 and the second drive wire 62 can be shortened respectively. Therefore, the inductance from the main surface side drive electrode 41 to the drive pad 21 can be reduced.

[0131] (2-3) The size of the drive pad 21 in the lateral direction Y is larger than the size of the semiconductor element 40 in the lateral direction Y. According to this configuration, the distance between the drive pad side end portion 61b of the first drive wire 61 and the drive pad side end portion 62b of the second drive wire 62 can be made even larger. Therefore, the inductance from the main surface side drive electrode 41 to the drive pad 21 can be further reduced.

[0132] (2-4) The size of the drive pad 21 in the lateral direction Y is larger than half of the inner main body portion 12 of the substrate 10. According to this configuration, the distance DW2 between the drive pad side end portion 61b of the first drive wire 61 and the drive pad side end portion 62b of the second drive wire 62 can be made large. Therefore, the inductance from the main surface side drive electrode 41 to the drive pad 21 can be reduced.

[0133] (2-5) As viewed from the longitudinal direction X, the semiconductor element 40 and the drive pad 21 are arranged such that all of the openings 45 of the semiconductor element 40 overlap with the drive pad 21. According to this configuration, the length of the first drive wire 61 can be shortened, and the distance between the first drive wire 61 and the second drive wire 62 can be made large. Therefore, the inductance from the main surface side drive electrode 41 to the drive pad 21 can be reduced.

[0134] (2-6) The plurality of drive wires 60, control wires 70, and sense wires 90 are made of the same material. Also, the wire diameters of the plurality of drive wires 60, control wires 70, and sense wires 90 are equal to each other. According to this configuration, since the connection operations of the plurality of drive wires 60 to the main surface side drive electrodes 41 and drive pads 21, the connection operations of the control wires 70 to the control electrodes 43 and control pads 31, and the connection operations of the sense wires 90 to the main surface side drive electrodes 41 and sense pads 81 can be performed with the same wire, the working processes thereof can be simplified.

[0135] (Modification Example of the Second Embodiment) The semiconductor device 1 of the second embodiment can be modified as follows, for example. Each of the following modification examples can be combined as long as no technical contradiction occurs. In the following modification examples, parts common to the second embodiment are denoted by the same reference numerals as those in the second embodiment, and the description thereof is omitted.

[0136] · The number of drive wires 60 is not limited to two and can be arbitrarily changed. In one example, as shown in FIG. 16, the plurality of drive wires 60 may be composed of three drive wires, namely, a first drive wire 61, a second drive wire 62, and a third drive wire 63. The third drive wire 63 is disposed between the first drive wire 61 and the second drive wire 62. In this case, the first drive wire 61 and the second drive wire 62 constitute the most separated combination among the plurality of drive wires 60.

[0137] That is, when the number of drive wires is three or more, the most separated combination refers to the two drive wires located at the most distant positions. For example, when three or more drive wires are arranged in the lateral direction Y, the most separated combination refers to the combination of the drive wires at both ends in the lateral direction Y.

[0138] The third drive wire 63 has a drive electrode side end 63a and a drive pad side end 63b. The drive electrode side end 63a is the end of the third drive wire 63 that is connected to the main surface side drive electrode 41. The drive pad side end 63b is the end of the third drive wire 63 that is connected to the drive pad 21. In FIG. 16, the drive electrode side end 63a overlaps the connection portion 23b of the drive lead 20 when viewed from the longitudinal direction X. The drive pad side end 63b overlaps the connection portion 23c of the drive lead 20 when viewed from the longitudinal direction X. That is, the drive pad side end 63b is arranged so as to be on the side of the fourth sealing resin side surface 54 rather than the drive electrode side end 63a.

[0139] In FIG. 16, the distance DW4 between the drive electrode side end 63a of the third drive wire 63 and the drive electrode side end 61a of the first drive wire 61 is smaller than the distance DW5 between the drive electrode side end 63a of the third drive wire 63 and the drive electrode side end 62a of the second drive wire 62. The distance DW4 and the distance DW5 are larger than the distance DW8 between the drive electrode side end 91 and the drive electrode side end 61a of the first drive wire 61. Note that the position of the drive electrode side end 63a in the lateral direction Y can be arbitrarily changed. In one example, the drive electrode side end 63a may be connected to the main surface side drive electrode 41 such that the distances DW4 and DW5 are equal to each other.

[0140] Also in FIG. 16, in the longitudinal direction X, the drive electrode side ends 61a of the first drive wire 61, the drive electrode side ends 62a of the second drive wire 62, and the drive electrode side ends 63a of the third drive wire 63 are arranged in an aligned state. Here, the state in which the drive electrode side ends 61a, 62a, 63a are aligned with each other in the longitudinal direction X means that the drive electrode side ends 61a, 62a, 63a in the longitudinal direction X overlap each other, and includes the case where a part overlaps according to the manufacturing error caused by wire bonding. In other words, if the amount of deviation in the longitudinal direction X at the drive electrode side ends 61a, 62a, 63a is within the variation range in performing wire bonding, it can be said that the drive electrode side ends 61a, 62a, 63a are aligned in the longitudinal direction X.

[0141] The drive pad side end portion 63b of the third drive wire 63 is connected to a portion closer to the semiconductor element 40 than the central portion in the longitudinal direction X of the drive pad 21 in the longitudinal direction X. The distance DW6 between the drive pad side end portion 61b of the first drive wire 61 and the drive pad side end portion 63b is larger than the distance DW4. The distance DW7 between the drive pad side end portion 62b of the second drive wire 62 and the drive pad side end portion 63b is larger than the distance DW5. In FIG. 16, the distance DW7 is larger than the distance DW6.

[0142] In a plan view, the first drive wire 61 and the third drive wire 63 are connected to the main surface side drive electrode 41 and the drive pad 21 such that the side closer to the drive pad 21 is farther away than the side closer to the main surface side drive electrode 41. In a plan view, the interval between the first drive wire 61 and the third drive wire 63 gradually widens as going from the main surface side drive electrode 41 toward the drive pad 21. In a plan view, the third drive wire 63 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 such that the side closer to the drive pad 21 is farther away than the side closer to the main surface side drive electrode 41. In a plan view, the interval between the third drive wire 63 and the second drive wire 62 gradually widens as going from the main surface side drive electrode 41 toward the drive pad 21.

[0143] · The size of the semiconductor element 40 can be arbitrarily changed. In the first example, as shown in FIG. 17, the size of the semiconductor element 40 may be made larger than the size of the semiconductor element 40 in the second embodiment. In the second example, as shown in FIG. 19, the size of the semiconductor element 40 may be made larger than the size of the semiconductor element 40 in FIG. 17.

[0144] In the first example shown in FIG. 17, the size of the semiconductor element 40 in the longitudinal direction X and the size in the transverse direction Y are each larger than the size of the semiconductor element 40 of the second embodiment. Also, as the size of the semiconductor element 40 increases, the size of the opening 45 formed in the surface 40a can be increased in both the longitudinal direction X and the transverse direction Y. In FIG. 17, the size of the opening 45 in the transverse direction Y is smaller than the size of the drive pad 21 in the transverse direction Y. The size of the drive pad 21 in the transverse direction Y is larger than the size of the semiconductor element 40 in the transverse direction Y. The opening 45 overlaps the first end portion 21a of the drive pad 21 when viewed from the longitudinal direction X. More specifically, the edge on the third side surface 40e side of the opening 45 is located on the third encapsulating resin side surface 53 side rather than the drive pad 21. Also, the opening 45 overlaps the connecting portion 23c of the drive lead 20 when viewed from the longitudinal direction X.

[0145] Also in FIG. 17, the third side surface 40e of the semiconductor element 40 overlaps the end portion on the fourth encapsulating resin side surface 54 side of the sense lead 80 when viewed from the longitudinal direction X. The fourth side surface 40f of the semiconductor element 40 overlaps the portion between the connecting portion 23c and the connecting portion 23d of the drive pad 21 in the transverse direction Y when viewed from the longitudinal direction X.

[0146] Similar to the second embodiment, the semiconductor device 1 has a first drive wire 61 and a second drive wire 62 as a plurality of drive wires 60. The drive electrode side end portion 61a of the first drive wire 61 is connected to a portion of the main surface side drive electrode 41 that is separated from the control electrode 43 in the lateral direction Y, similar to the drive electrode side end portion 61a of the second embodiment. The drive pad side end portion 61b of the first drive wire 61 is connected to the first end portion 21a of the drive pad 21, similar to the drive pad side end portion 61b of the second embodiment. The drive electrode side end portion 62a of the second drive wire 62 is connected to an end portion on the fourth side surface 40f side of the semiconductor element 40 in the opening 45 in the lateral direction Y, similar to the drive electrode side end portion 62a of the second embodiment. The drive pad side end portion 62b of the second drive wire 62 is connected to the second end portion 21b of the drive pad 21, similar to the drive pad side end portion 62b of the second embodiment. In the longitudinal direction X, the drive electrode side end portion 61a and the drive electrode side end portion 62a are arranged in the lateral direction Y in a state where they are aligned with each other. The drive pad side end portion 61b and the drive pad side end portion 62b are each connected to a portion of the drive pad 21 closer to the semiconductor element 40 than the central portion of the drive pad 21 in the longitudinal direction X.

[0147] In FIG. 17, the distance DY1 between the auxiliary line LS1 along the longitudinal direction X from the drive electrode side end portion 61a and the auxiliary line LS2 along the longitudinal direction X from the drive pad side end portion 61b in the lateral direction Y is smaller than the distance DY2 between the auxiliary line LS3 along the longitudinal direction X from the drive electrode side end portion 62a and the auxiliary line LS4 along the longitudinal direction X from the drive pad side end portion 62b in the lateral direction Y. In a plan view, the distance DW2 between the drive pad side end portion 61b and the drive pad side end portion 62b is larger than the distance DW1 between the drive electrode side end portion 61a and the drive electrode side end portion 62a. Thus, in a plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 such that they are farther apart on the drive pad 21 side than on the main surface side drive electrode 41 side. In a plan view, the interval between the first drive wire 61 and the second drive wire 62 gradually widens as it goes from the main surface side drive electrode 41 toward the drive pad 21.

[0148] According to this configuration, since the distance between the first drive wire 61 and the second drive wire 62 can be increased, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be reduced.

[0149] · In the modified example of FIG. 17, the number of drive wires 60 is not limited to two and can be arbitrarily changed. In one example, as shown in FIG. 18, it may be composed of three drive wires, namely, a first drive wire 61, a second drive wire 62, and a third drive wire 63, as the plurality of drive wires 60. The third drive wire 63 is disposed between the first drive wire 61 and the second drive wire 62. In this case, the first drive wire 61 and the second drive wire 62 constitute the most separated combination among the plurality of drive wires 60. The third drive wire 63 has a drive electrode side end portion 63a and a drive pad side end portion 63b. The distance DW4 between the drive electrode side end portion 63a and the drive electrode side end portion 61a of the first drive wire 61 is larger than the distance DW5 between the drive electrode side end portion 63a and the drive electrode side end portion 62a of the second drive wire 62. Note that the arrangement position of the drive electrode side end portion 63a with respect to the main surface side drive electrode 41 can be arbitrarily changed. In one example, the drive electrode side end portion 63a may be connected to the main surface side drive electrode 41 so that the distance DW4 and the distance DW5 are equal to each other.

[0150] Also in FIG. 18, in the vertical direction X, the drive electrode side end portions 61a of the first drive wire 61, the drive electrode side end portions 62a of the second drive wire 62, and the drive electrode side end portions 63a of the third drive wire 63 are arranged in an aligned state. Here, the state where the drive electrode side end portions 61a, 62a, and 63a are aligned with each other in the vertical direction X means that the drive electrode side end portions 61a, 62a, and 63a overlap each other in the vertical direction X, and includes the case where a part overlaps according to the manufacturing error caused by wire bonding. In other words, if the deviation amount in the vertical direction X at the drive electrode side end portions 61a, 62a, and 63a is within the variation range in performing wire bonding, it can be said that the drive electrode side end portions 61a, 62a, and 63a are aligned in the vertical direction X.

[0151] The drive pad side end 63b of the third drive wire 63 is arranged in the longitudinal direction X at a portion closer to the semiconductor element 40 than the central portion of the drive pad 21 in the longitudinal direction X. The distance DW6 between the drive pad side end 61b of the first drive wire 61 and the drive pad side end 63b is larger than the distance DW4. The distance DW7 between the drive pad side end 62b of the second drive wire 62 and the drive pad side end 63b is larger than the distance DW5. In FIG. 18, the distance DW7 is larger than the distance DW6.

[0152] In a plan view, the first drive wire 61 and the third drive wire 63 are connected to the main surface side drive electrode 41 and the drive pad 21 such that they are farther apart on the drive pad 21 side than on the main surface side drive electrode 41 side. In a plan view, the interval between the first drive wire 61 and the third drive wire 63 gradually widens as going from the main surface side drive electrode 41 toward the drive pad 21. In a plan view, the third drive wire 63 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 such that they are farther apart on the drive pad 21 side than on the main surface side drive electrode 41 side. In a plan view, the interval between the third drive wire 63 and the second drive wire 62 gradually widens as going from the main surface side drive electrode 41 toward the drive pad 21.

[0153] Note that in a plan view, the inclination angle of the third drive wire 63 with respect to the longitudinal direction X can be arbitrarily changed. In one example, in a plan view, the inclination angle of the third drive wire 63 with respect to the longitudinal direction X may be equal to the inclination angle of the first drive wire 61 with respect to the longitudinal direction X or the inclination angle of the second drive wire 62 with respect to the longitudinal direction X.

[0154] In the second example shown in FIG. 19, the shape of the semiconductor element 40 in plan view is square. The shape of the main surface side drive electrode 41 (source electrode) formed on the surface 40a of the semiconductor element 40 in plan view is substantially square. A notch 41b is formed at the end of the semiconductor element 40 on the second side surface 40d and the third side surface 40e side. The control electrode 43 is formed in the notch 41b. Further, the shape of the opening 45 formed in the passivation film 44 in plan view is square. The opening 45 exposes a part of the main surface side drive electrode 41 and a part of the control electrode 43, similar to the second embodiment. The main surface side drive electrode 41 has an exposed region 46 exposed by the opening 45.

[0155] The semiconductor device 1 of the second example shown in FIG. 19 has, as a plurality of drive wires 60, a first drive wire 61, a second drive wire 62, a third drive wire 63, and a fourth drive wire 64. The third drive wire 63 and the fourth drive wire 64 are arranged between the first drive wire 61 and the second drive wire 62. In this case, the first drive wire 61 and the second drive wire 62 constitute the most separated combination among the plurality of drive wires 60. The first drive wire 61, the second drive wire 62, the third drive wire 63, and the fourth drive wire 64 are arranged spaced apart in the lateral direction Y. In plan view, the first drive wire 61 is arranged on the third side surface 40e side of the semiconductor element 40 rather than the second drive wire 62, the third drive wire 63, and the fourth drive wire 64 in the lateral direction Y. The second drive wire 62 is arranged on the fourth side surface 40f side of the semiconductor element 40 rather than the first drive wire 61, the third drive wire 63, and the fourth drive wire 64 in the lateral direction Y. The third drive wire 63 is arranged on the third side surface 40e side of the semiconductor element 40 rather than the fourth drive wire 64. Thus, the first drive wire 61 and the second drive wire 62, which constitute the most separated combination among the plurality of drive wires 60, are the drive wires at both ends in the lateral direction Y among the plurality of drive wires 60.

[0156] The drive electrode side end portion 61a of the first drive wire 61 is arranged so as to be on the side of the third sealing resin side surface 53 rather than the drive pad side end portion 61b of the first drive wire 61. Specifically, the drive electrode side end portion 61a overlaps with the connecting portion 23a of the drive lead 20 when viewed from the longitudinal direction X. The drive pad side end portion 61b overlaps with the portion between the connecting portion 23a and the connecting portion 23b of the drive pad 21 when viewed from the longitudinal direction X.

[0157] The drive electrode side end portion 62a of the second drive wire 62 is arranged so as to be on the side of the third sealing resin side surface 53 rather than the drive pad side end portion 62b of the second drive wire 62. Specifically, the drive electrode side end portion 62a overlaps with the portion between the connecting portion 23c and the connecting portion 23d of the drive pad 21 when viewed from the longitudinal direction X. The drive pad side end portion 62b overlaps with the connecting portion 23e of the drive lead 20 when viewed from the longitudinal direction X.

[0158] The third drive wire 63 has a drive electrode side end portion 63a and a drive pad side end portion 63b. The drive electrode side end portion 63a is the end portion connected to the main surface side drive electrode 41 of the third drive wire 63. The drive pad side end portion 63b is the end portion connected to the drive pad 21 of the third drive wire 63. The drive electrode side end portion 63a is arranged so as to be on the side of the third sealing resin side surface 53 rather than the drive pad side end portion 63b. Specifically, the drive electrode side end portion 63a overlaps with the connecting portion 23b of the drive lead 20 when viewed from the longitudinal direction X. The drive pad side end portion 63b overlaps with the portion between the connecting portion 23b and the connecting portion 23c of the drive pad 21 when viewed from the longitudinal direction X.

[0159] The fourth drive wire 64 has a drive electrode side end portion 64a and a drive pad side end portion 64b. The drive electrode side end portion 64a is an end portion of the fourth drive wire 64 that is connected to the main surface side drive electrode 41. The drive pad side end portion 64b is an end portion of the fourth drive wire 64 that is connected to the drive pad 21. The drive electrode side end portion 64a is arranged so as to be on the side of the third sealing resin side surface 53 rather than the drive pad side end portion 64b. Specifically, the drive electrode side end portion 64a overlaps a portion between the connecting portion 23b and the connecting portion 23c of the drive pad 21 when viewed from the longitudinal direction X. The drive pad side end portion 64b overlaps a portion between the connecting portion 23c and the connecting portion 23d of the drive pad 21 when viewed from the longitudinal direction X.

[0160] The drive electrode side end portions 61a and 63a are connected to the side of the first exposed end portion 46a rather than the central portion in the lateral direction Y of the exposed region 46 of the main surface side drive electrode 41. The drive electrode side end portion 61a is connected to the side of the first exposed end portion 46a rather than the drive electrode side end portion 63a in the lateral direction Y. The drive electrode side end portions 64a and 62a are connected to the side of the second exposed end portion 46b rather than the central portion in the lateral direction Y of the exposed region 46. The drive electrode side end portion 62a is connected to the side of the second exposed end portion 46b rather than the drive electrode side end portion 64a.

[0161] The drive electrode side end portions 61a of the first drive wire 61 and 64a of the fourth drive wire 64 are displaced in the longitudinal direction X from the drive electrode side end portions 62a of the second drive wire 62 and 63a of the third drive wire 63. Specifically, the drive electrode side end portions 61a, 64a are arranged so as to be on the first side surface 40c side of the semiconductor element 40 rather than the drive electrode side end portions 62a, 63a. For this reason, the lengths of the first drive wire 61 and the fourth drive wire 64 are longer than the lengths of the second drive wire 62 and the third drive wire 63. Also, the drive electrode side end portion 61a and the drive electrode side end portion 64a are arranged in the lateral direction Y in a state of being aligned with each other in the longitudinal direction X. The drive electrode side end portion 62a and the drive electrode side end portion 63a are arranged in the lateral direction Y in a state of being aligned with each other in the longitudinal direction X. Here, the state where the drive electrode side end portions 61a, 64a are aligned in the longitudinal direction X means that both drive electrode side end portions 61a, 64a in the longitudinal direction X overlap each other, and includes the case where a part overlaps according to a manufacturing error due to wire bonding. In other words, if the amount of displacement in the longitudinal direction X at the drive electrode side end portions 61a, 64a is within the variation range in performing wire bonding, it can be said that the drive electrode side end portions 61a, 64a are aligned in the longitudinal direction X. Also, the state where the drive electrode side end portions 62a, 63a are aligned with each other in the longitudinal direction X means that both drive electrode side end portions 62a, 63a in the longitudinal direction X overlap each other, and includes the case where a part overlaps according to a manufacturing error due to wire bonding. In other words, if the amount of displacement in the longitudinal direction X at the drive electrode side end portions 62a, 63a is within the variation range in performing wire bonding, it can be said that the drive electrode side end portions 62a, 63a are aligned in the longitudinal direction X.

[0162] Note that the arrangement positions in the longitudinal direction X of the drive electrode side end portions 61a to 64a can be arbitrarily changed. In one example, the drive electrode side end portions 61a to 64a may be displaced from each other. Also, the drive electrode side end portions 61a to 64a may be arranged in the lateral direction Y in a state of being aligned with each other.

[0163] The distance DW10 between the auxiliary line LS1 along the longitudinal direction X from the drive electrode side end portion 61a and the auxiliary line LS9 along the longitudinal direction X from the drive electrode side end portion 63a is smaller than the distance DW11 between the auxiliary line LS9 and the auxiliary line LS11 along the longitudinal direction X from the drive electrode side end portion 64a. The distance DW12 in the lateral direction Y between the auxiliary line LS3 along the longitudinal direction X from the drive electrode side end portion 62a and the auxiliary line LS11 is slightly smaller than the distance DW10. Note that the arrangement positions of the drive electrode side end portions 61a to 64a in the lateral direction Y are arbitrarily changeable within the limitation that the drive electrode side end portion 61a is located closest to the third sealing resin side surface 53 side among the drive electrode side end portions 61a to 64a, and the drive electrode side end portion 62a is located closest to the fourth sealing resin side surface 54 side. In one example, the drive electrode side end portions 61a to 64a may be arranged such that the distance DW12 and the distance DW10 are equal to each other.

[0164] The distance DY1 in the lateral direction Y between the auxiliary line LS1 and the auxiliary line LS2 along the longitudinal direction X from the drive pad side end portion 61b is smaller than the distance DY2 in the lateral direction Y between the auxiliary line LS3 and the auxiliary line LS4 along the longitudinal direction X from the drive pad side end portion 62b. The distance DY3 in the lateral direction Y between the auxiliary line LS9 and the auxiliary line LS10 along the longitudinal direction X from the drive pad side end portion 63b is smaller than the distance DY4 in the lateral direction Y between the auxiliary line LS11 and the auxiliary line LS12 along the longitudinal direction X from the drive pad side end portion 64b. In FIG. 19, the distance DY1 is smaller than the distance DY3. The distance DY2 is larger than the distance DY4.

[0165] Note that the drive electrode side end portion 61a may be arranged to be the limit position on the fourth side surface 40f side within the region where wire bonding can be performed as the end portion on the third side surface 40e side of the semiconductor element 40 in the opening 45 in the lateral direction Y. The drive pad side end portion 61b may be arranged to be the limit position on the third sealing resin side surface 53 side within the region where wire bonding can be performed as the first end portion 21a of the drive pad 21.

[0166] Further, the drive electrode side end portion 62a may be arranged so as to be the limit position on the fourth side surface 40f side of the region where wire bonding can be performed as the end portion on the fourth side surface 40f side of the opening 45 in the lateral direction Y. The drive pad side end portion 62b may be arranged so as to be the limit position on the side of the fourth encapsulating resin side surface 54 of the region where wire bonding can be performed as the second end portion 21b of the drive pad 21.

[0167] In plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 such that the drive pad 21 side is farther away from the main surface side drive electrode 41 side. In plan view, the distance between the first drive wire 61 and the second drive wire 62 gradually widens as it goes from the main surface side drive electrode 41 toward the drive pad 21. In plan view, the first drive wire 61 and the third drive wire 63 are connected to the main surface side drive electrode 41 and the drive pad 21 such that the drive pad 21 side is farther away from the main surface side drive electrode 41 side. In plan view, the distance in the lateral direction Y between the first drive wire 61 and the third drive wire 63 gradually widens as it goes from the main surface side drive electrode 41 toward the drive pad 21. In plan view, the third drive wire 63 and the fourth drive wire 64 are connected to the main surface side drive electrode 41 and the drive pad 21 such that the drive pad 21 side is farther away from the main surface side drive electrode 41 side. In plan view, the distance in the lateral direction Y between the third drive wire 63 and the fourth drive wire 64 gradually widens as it goes from the main surface side drive electrode 41 toward the drive pad 21. In plan view, the fourth drive wire 64 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 such that the drive pad 21 side is farther away from the main surface side drive electrode 41 side. In plan view, the distance in the lateral direction Y between the fourth drive wire 64 and the second drive wire 62 gradually widens as it goes from the main surface side drive electrode 41 toward the drive pad 21. In plan view, the third drive wire 63 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 such that the drive pad 21 side is farther away from the main surface side drive electrode 41 side. In plan view, the distance in the lateral direction Y between the third drive wire 63 and the second drive wire 62 gradually widens as it goes from the main surface side drive electrode 41 toward the drive pad 21.

[0168] The drive electrode side end portion 91 of the sense wire 90 is connected to a portion between the control electrode side end portion 71 of the control wire 70 and the drive electrode side end portion 61a of the first drive wire 61 in the lateral direction Y among the main surface side drive electrodes 41. Further, the drive electrode side end portion 91 is connected to the end portion on the second side surface 40d side of the main surface side drive electrode 41. That is, the drive electrode side end portion 91 is connected to a portion adjacent to the control electrode 43 in the lateral direction Y among the main surface side drive electrodes 41. According to this configuration, the length of the sense wire 90 can be shortened.

[0169] · The arrangement position of the inner main body portion 12 of the semiconductor element 40 can be arbitrarily changed. In the first example, as shown in FIG. 20, the semiconductor element 40 may be arranged at a portion closer to the second encapsulation resin side surface 52 in the inner main body portion 12. Specifically, a first distance D1 in the longitudinal direction X between the semiconductor element 40 and the edge on the second encapsulation resin side surface 52 side of the first flange portion 19a of the inner main body portion 12 is smaller than half of a second distance D2 in the longitudinal direction X between the semiconductor element 40 and the first wide portion 12f of the inner main body portion 12. The first distance D1 is smaller than one-third of the second distance D2. In FIG. 20, the first distance D1 is approximately one-sixth of the second distance D2.

[0170] In the lateral direction Y, the semiconductor element 40 is arranged at the central portion of the inner main body portion 12. Specifically, a third distance D3 in the lateral direction Y between the semiconductor element 40 and the edge on the third encapsulation resin side surface 53 side of the second flange portion 19b of the inner main body portion 12 is equal to a fourth distance D4 in the lateral direction Y between the semiconductor element 40 and the edge on the fourth encapsulation resin side surface 54 side of the third flange portion 19c of the inner main body portion 12 of the semiconductor element 40. Here, if the deviation amount between the third distance D3 and the fourth distance D4 is within 5% of the third distance D3, for example, it can be said that the third distance D3 is equal to the fourth distance D4.

[0171] According to such a configuration, the distance between the opening 45 of the semiconductor element 40 and the drive pad 21 is reduced, so that the first drive wire 61 and the second drive wire 62 can be shortened respectively. Therefore, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be further reduced. In addition, the distance between the opening 45 of the semiconductor element 40 and the sense pad 81 is reduced, so that the length of the sense wire 90 can be shortened, and thus the inductance of the electrical connection path between the main surface side drive electrode 41 and the back surface side drive electrode 42 can be reduced.

[0172] In the second example, as shown in FIG. 21, the semiconductor element 40 may be disposed at a portion closer to the second encapsulating resin side surface 52 and closer to the fourth encapsulating resin side surface 54 in the inner main body portion 12. Specifically, a first distance D1 in the longitudinal direction X between the semiconductor element 40 and the edge on the second encapsulating resin side surface 52 side of the first flange portion 19a of the inner main body portion 12 is smaller than 1 / 2 of a second distance D2 between the semiconductor element 40 and the first wide portion 12f of the inner main body portion 12. The first distance D1 is smaller than 1 / 3 of the second distance D2. In FIG. 20, the first distance D1 is about 1 / 6 of the second distance D2.

[0173] In the lateral direction Y, the semiconductor element 40 is disposed at a portion closer to the third side surface 12e of the inner main body portion 12. Specifically, a third distance D3 in the lateral direction Y between the semiconductor element 40 and the edge on the third encapsulating resin side surface 53 side of the second flange portion 19b of the inner main body portion 12 is larger than a fourth distance D4 in the lateral direction Y between the semiconductor element 40 and the edge on the fourth encapsulating resin side surface 54 side of the third flange portion 19c of the inner main body portion 12. The fourth distance D4 is smaller than 1 / 2 of the third distance D3. The fourth distance D4 is smaller than 1 / 3 of the third distance D3. In FIG. 21, the fourth distance D4 is about 1 / 6 of the third distance D3.

[0174] According to such a configuration, since the distance between the opening 45 of the semiconductor element 40 and the drive pad 21 is further reduced, the first drive wire 61 and the second drive wire 62 can be made even shorter respectively. Therefore, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be further reduced.

[0175] · The materials and wire diameters of the drive wire 60, the control wire 70, and the sense wire 90 can be arbitrarily changed. In one example, at least one of the wire diameters of the drive wire 60, the control wire 70, and the sense wire 90 may be different from the other wire diameters. Also, at least one of the materials of the drive wire 60, the control wire 70, and the sense wire 90 may be different from the other materials.

[0176] · The arrangement position of the sense pad 81 in the thickness direction Z can be arbitrarily changed. The sense pad 81 may be displaced with respect to at least one of the drive pad 21 and the control pad 31 in the thickness direction Z. In one example, the sense pad 81 is arranged in a state aligned with the semiconductor element 40 in the thickness direction Z.

[0177] · The first wide portion 12f may be omitted from the inner main body portion 12 of the substrate 10. In this case, in the longitudinal direction X, the protruding portion 13 and the first sealing resin side surface 51 of the sealing resin 50 may be in contact. · The second wide portion 12g may be omitted from the inner main body portion 12 of the substrate 10.

[0178] (Third Embodiment) Referring to FIGS. 22 to 31, a third embodiment of the semiconductor device 1 will be described. The semiconductor device 1 of this embodiment has different shapes of the substrate 10, the drive lead 20, the control lead 30, and the sealing resin 50 as compared with the semiconductor device 1 of the first embodiment. In this embodiment, for convenience, the same components as those in the first embodiment may be denoted by the same reference numerals, and the description thereof may be omitted.

[0179] As shown in FIG. 22, the semiconductor device 1 of this embodiment is a package with an outline standard (JEITA standard) of TO-247. Specifically, the vertical dimension L1 of the semiconductor device 1 is 19.18 mm to 20.57 mm, the horizontal dimension L2 is 15.75 mm to 16.13 mm, and the thickness dimension L3 is 4.83 mm to 5.21 mm. Also, the semiconductor device 1 is of the SIP type. Thus, the size of the semiconductor device 1 of this embodiment is larger than the size of the semiconductor device 1 of the first embodiment.

[0180] As shown in FIG. 22, the shape of the encapsulation resin 50 is a flat plate. The encapsulation resin 50 is formed by mold molding. Each of the side surfaces 51 to 54 of the encapsulation resin 50 is provided with an inclined surface that inclines with respect to the thickness direction Z in order to provide a draft angle that facilitates the removal of the mold during the molding of the encapsulation resin 50. Specifically, each of the side surfaces 51 to 54 has a first inclined surface provided with a draft angle that facilitates the removal of the upper mold of the mold, and a second inclined surface provided with a draft angle that facilitates the removal of the lower mold of the mold. The upper mold of the mold forms the top surface 56 of the encapsulation resin and the portion of each of the side surfaces 51 to 54 on the side of the top surface 56 of the encapsulation resin. The lower mold forms the bottom surface 55 of the encapsulation resin and the portion of each of the side surfaces 51 to 54 on the side of the bottom surface 55 of the encapsulation resin.

[0181] Recesses 58 are formed at both ends of the encapsulation resin 50 in the lateral direction Y. The recess 58 on the side of the third encapsulation resin side surface 53 of the encapsulation resin 50 is recessed in a curved shape in the lateral direction Y from the third encapsulation resin side surface 53. The recess 58 on the side of the fourth encapsulation resin side surface 54 of the encapsulation resin 50 is recessed in a curved shape in the lateral direction Y from the fourth encapsulation resin side surface 54. The recess 58 is formed extending in the thickness direction Z from the top surface 56 of the encapsulation resin to the main surface 10a of the substrate 10. That is, the main surface 10a of the substrate 10 is exposed by the recess 58. The recess 58 is provided closer to the first encapsulation resin side surface 51 than the center of the encapsulation resin 50 in the longitudinal direction X.

[0182] In the central portion of the sealing resin 50 in the lateral direction Y, a through hole 59 is formed. The through hole 59 penetrates the sealing resin 50 in the thickness direction Z. The through hole 59 is provided closer to the first sealing resin side surface 51 than the center of the sealing resin 50 in the longitudinal direction X. The shape of the through hole 59 in plan view is circular. In the present embodiment, the through hole 59 is provided so as to be in the same position as the concave portion 58 in the longitudinal direction X. By inserting a bolt or a screw through the through hole 59, the semiconductor device 1 can be attached to a circuit board or a heat sink (both not shown).

[0183] FIG. 23 is a view of the semiconductor device 1 as seen from the top surface 56 of the sealing resin in the thickness direction Z. In FIG. 23, for convenience, the sealing resin 50 is shown by a two-dot chain line, and the components inside the sealing resin 50 are shown by solid lines. As shown in FIG. 23, in plan view, the shape of the sealing resin 50 is a substantially rectangular shape in which the longitudinal direction X is the long side direction and the lateral direction Y is the short side direction.

[0184] As shown in FIGS. 22 and 23, the substrate 10 has a substrate main body portion 11 and a lead portion 16 disposed in the sealing resin 50. The substrate 10 is formed of, for example, aluminum (Al) or copper (Cu).

[0185] A through hole 10c is provided in the substrate main body portion 11. The through hole 10c is provided closer to the first sealing resin side surface 51 than the center of the substrate 10 in the longitudinal direction X. The shape of the through hole 10c in plan view is circular. The through hole 10c is provided to be concentric with the through hole 59 of the sealing resin 50. The diameter of the through hole 10c is larger than the diameter of the through hole 59. In addition, in the substrate main body portion 11, a pair of first concave portions 10d that are recessed in a semicircular shape in plan view and a second concave portion 10e that is recessed in a rectangular shape in plan view are provided. The pair of first concave portions 10d are provided closer to the first sealing resin side surface 51 than the center of the substrate 10 in the longitudinal direction X. The pair of first concave portions 10d are exposed to the outside by the concave portion 58 of the sealing resin 50. The second concave portion 10e is provided at an end portion of the substrate main body portion 11 on the first sealing resin side surface 51 side.

[0186] The substrate body portion 11 is provided with a plurality of flange portions 19. The plurality of flange portions 19 include a first flange portion 19a, a second flange portion 19b, and a third flange portion 19c. The first flange portion 19a protrudes from the first side surface 11a of the substrate body portion 11 toward the second sealing resin side surface 52. The second flange portion 19b protrudes from the second side surface 11b of the substrate body portion 11 toward the third sealing resin side surface 53 in a region on the second sealing resin side surface 52 side of the through hole 10c in the longitudinal direction X of the substrate body portion 11. The third flange portion 19c protrudes from the third side surface 11c of the substrate body portion 11 toward the fourth sealing resin side surface 54 in a region on the second sealing resin side surface 52 side of the through hole 10c in the longitudinal direction X of the substrate body portion 11.

[0187] As shown in FIG. 24, the back surface 10b of the substrate 10 (the back surface of the substrate body portion 11) is exposed from the back surface 55 of the sealing resin. Thereby, the heat dissipation performance of the substrate 10 can be improved. The outer peripheral side of the through hole 10c of the substrate 10 is covered with the sealing resin 50.

[0188] As shown in FIG. 23, the lead portion 16 extends from the end portion on the first side surface 12c side of the substrate body portion 11 toward the second sealing resin side surface 52 and protrudes from the second sealing resin side surface 52. The lead portion 16 can be divided into a terminal portion 17 protruding from the second sealing resin side surface 52 and a connecting portion 18 connecting the terminal portion 17 and the substrate body portion 11.

[0189] The connecting portion 18 is located at the central portion of the substrate body portion 11 in the lateral direction Y. The connecting portion 18 has an inclined portion 18a. The inclined portion 18a is inclined toward the top surface 56 of the sealing resin as it goes from the substrate body portion 11 toward the second sealing resin side surface 52. An intermediate portion 18b between the inclined portion 18a and the terminal portion 17 of the connecting portion 18 is located on the top surface 56 side of the sealing resin than the substrate body portion 11. In a plan view, the intermediate portion 18b extends along the longitudinal direction X. The portion of the intermediate portion 18b that contacts the second sealing resin side surface 52 is located at the central portion of the second sealing resin side surface 52 in the lateral direction Y.

[0190] The terminal portion 17 protrudes from the central portion in the lateral direction Y of the second sealing resin side surface 52. The terminal portion 17 is at the same position as the intermediate portion 18b in the thickness direction Z. That is, the terminal portion 17 is located on the sealing resin top surface 56 side rather than the substrate main body portion 11.

[0191] As shown in FIG. 23, in a plan view, on the second sealing resin side surface 52 side of the sealing resin 50 rather than the substrate 10, the drive lead 20 and the control lead 30 are arranged in a state of being separated from the substrate 10 in the longitudinal direction X. The drive lead 20 and the control lead 30 are arranged to be separated from each other in the lateral direction Y. A lead portion 16 is arranged between the drive lead 20 and the control lead 30 in the lateral direction Y. In the present embodiment, in a plan view, the drive lead 20 and the control lead 30 are in a shape that is symmetric with respect to the center line C along the longitudinal direction X from the central portion in the longitudinal direction X of the semiconductor device 1. Note that the shapes of the drive lead 20 and the control lead 30 in a plan view can be arbitrarily changed. In one example, the shape of the drive lead 20 in a plan view and the shape of the control lead 30 in a plan view may be different from each other.

[0192] The drive pad 21 and the connecting portion 23 of the drive lead 20 are arranged between the substrate 10 and the second sealing resin side surface 52 in the longitudinal direction X. The drive pad 21 and the connecting portion 23 are arranged on the fourth sealing resin side surface 54 side rather than the central portion of the sealing resin 50 in the lateral direction Y. The drive pad 21 is arranged on the fourth sealing resin side surface 54 side rather than the semiconductor element 40. The shape of the drive pad 21 in a plan view is a substantially rectangular shape in which the lateral direction Y is the long side direction and the longitudinal direction X is the short side direction. In the present embodiment, the size of the drive pad 21 in the lateral direction Y is larger than the size of the opening 45 in the lateral direction Y. Also, the size of the drive pad 21 in the lateral direction Y is larger than the size of the semiconductor element 40 in the lateral direction Y. In the thickness direction Z, the drive pad 21 is located on the sealing resin top surface 56 side rather than the substrate main body portion 11. Also, in the thickness direction Z, the drive pad 21 is located on the sealing resin top surface 56 side rather than the semiconductor element 40. In the present embodiment, the drive pad 21 is at the same position as the intermediate portion 18b of the lead portion 16 in the thickness direction Z.

[0193] The connecting portion 23 is continuous from the end of the driving pad 21 on the side of the second sealing resin side surface 52. The connecting portion 23 is located on the side of the fourth sealing resin side surface 54 rather than the central portion of the driving pad 21 in the lateral direction Y. The driving terminal 22 constitutes a source terminal. The driving terminal 22 protrudes from the second sealing resin side surface 52.

[0194] The control pad 31 and the connecting portion 33 are disposed between the substrate 10 and the second sealing resin side surface 52 in the longitudinal direction X. The control pad 31 and the connecting portion 33 are disposed on the side of the third sealing resin side surface 53 rather than the central portion of the sealing resin 50 in the lateral direction Y. In the thickness direction Z, the control pad 31 is located on the side of the sealing resin top surface 56 rather than the substrate main body portion 11. Also, in the thickness direction Z, the control pad 31 is located on the side of the sealing resin top surface 56 rather than the semiconductor element 40. In the present embodiment, the control pad 31 is at the same position as the intermediate portion 18b of the lead portion 16 in the thickness direction Z.

[0195] The connecting portion 33 is continuous from the end of the control pad 31 on the side of the second sealing resin side surface 52. The connecting portion 33 is located closer to the third sealing resin side surface 53 among the control pads 31 in the lateral direction Y. The control terminal 32 constitutes a gate terminal. The control terminal 32 protrudes from the second sealing resin side surface 52.

[0196] Similar to the first embodiment, a SiCMOSFET is used as the semiconductor element 40. Also, similar to the first embodiment, the semiconductor element 40 is an element capable of high-speed switching in response to a drive signal having a frequency of 1 kHz or more and several hundreds of kHz or less. Preferably, the semiconductor element 40 is an element capable of high-speed switching in response to a drive signal having a frequency of 1 kHz or more and 100 kHz or less. In the present embodiment, the semiconductor element 40 performs high-speed switching in response to a drive signal having a frequency of 100 kHz. The shape and size of the semiconductor element 40 are the same as those of the semiconductor element 40 in the first embodiment.

[0197] The semiconductor element 40 is mounted on the substrate main body portion 11 (the main surface 10a of the substrate 10) by solder SD. As shown in FIG. 23, in the present embodiment, the semiconductor element 40 is arranged so as to be on the lead portion 16 side rather than the central portion in the longitudinal direction X of the substrate main body portion 11. Specifically, a first distance D1 between the semiconductor element 40 and the edge on the second sealing resin side surface 52 side of the first flange portion 19a of the substrate main body portion 11 is smaller than a second distance D2 between the semiconductor element 40 and the edge on the second sealing resin side surface 52 side in the through hole 10c of the substrate main body portion 11.

[0198] The semiconductor element 40 is arranged at the center of the substrate main body portion 11 in the lateral direction Y. Specifically, a third distance D3 between the semiconductor element 40 and the second side surface 11b of the substrate main body portion 11 is equal to a fourth distance D4 between the semiconductor element 40 and the third side surface 11c of the substrate main body portion 11. Here, if the deviation amount between the third distance D3 and the fourth distance D4 is within 5% of the third distance D3, it can be said that the third distance D3 and the fourth distance D4 are equal to each other.

[0199] The semiconductor device 1 includes a plurality of drive wires 60 and one control wire 70. In the present embodiment, the plurality of drive wires 60 are composed of two drive wires, namely, a first drive wire 61 and a second drive wire 62. That is, the first drive wire 61 and the second drive wire 62 constitute the most separated combination among the plurality of drive wires 60. The first drive wire 61 is arranged on the control wire 70 side with respect to the second drive wire 62. The first drive wire 61 and the second drive wire 62 connect the main surface side drive electrode 41 and the drive pad 21 of the semiconductor element 40 in a separated state from each other. In a plan view, the first drive wire 61 and the second drive wire 62 are arranged separated from each other in the lateral direction Y. The first drive wire 61 and the second drive wire 62 are the drive wires at both ends in the lateral direction Y among the plurality of drive wires 60.

[0200] The first drive wire 61 and the second drive wire 62 are made of the same metal. In the present embodiment, the first drive wire 61 and the second drive wire 62 contain aluminum. The wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62. Here, if the deviation amount between the wire diameter of the first drive wire 61 and the wire diameter of the second drive wire 62 is within 5% of the wire diameter of the first drive wire 61, for example, it can be said that the wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62. In the present embodiment, the wire diameters of the first drive wire 61 and the second drive wire 62 are equal to the wire diameter of the control wire 70. Here, if the deviation amount between the wire diameters of the first drive wire 61 and the second drive wire 62 and the wire diameter of the control wire 70 is within 5% of the wire diameter of the control wire 70, for example, it can be said that the wire diameters of the first drive wire 61 and the second drive wire 62 are equal to the wire diameter of the control wire 70.

[0201] The first drive wire 61 and the second drive wire 62 each connect the main surface side drive electrode 41 of the semiconductor element 40 and the drive pad 21. The first drive wire 61 and the second drive wire 62 are each connected to the main surface side drive electrode 41 and the drive pad 21 by, for example, wire bonding.

[0202] In a plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 such that the side closer to the drive pad 21 is farther away than the side closer to the main surface side drive electrode 41. In a plan view, the distance between the first drive wire 61 and the second drive wire 62 widens as it goes from the main surface side drive electrode 41 toward the drive pad 21 side. Hereinafter, the configuration of the first drive wire 61 and the second drive wire 62 will be described in detail.

[0203] As shown in FIG. 25, the drive electrode side end portion 61a of the first drive wire 61 is disposed closer to the third encapsulation resin side surface 53 than the drive pad side end portion 61b of the first drive wire 61. The drive electrode side end portion 62a of the second drive wire 62 is disposed closer to the third encapsulation resin side surface 53 than the drive pad side end portion 62b of the second drive wire 62. In a plan view, the distance DW2 between the drive pad side end portion 61b and the drive pad side end portion 62b is larger than the distance DW1 between the drive electrode side end portion 61a and the drive electrode side end portion 62a.

[0204] The distance between the auxiliary line LS1 along the longitudinal direction X from the drive electrode side end portion 61a and the auxiliary line LS2 along the longitudinal direction X from the drive pad side end portion 61b in the lateral direction Y is defined as the distance DY1, and the distance between the auxiliary line LS3 along the longitudinal direction X from the drive electrode side end portion 62a and the auxiliary line LS4 along the longitudinal direction X from the drive pad side end portion 62b in the lateral direction Y is defined as the distance DY2. In this case, the distance DY2 is larger than the distance DY1.

[0205] The drive electrode side end portion 61a of the first drive wire 61 is connected to the side closer to the first exposed end portion 46a than the central portion in the lateral direction Y of the exposed region 46 of the main surface side drive electrode 41. In the present embodiment, the drive electrode side end portion 61a is connected to the first exposed end portion 46a. Specifically, the drive electrode side end portion 61a is connected to a portion adjacent to the control electrode 43 among the main surface side drive electrodes 41 in the lateral direction Y, that is, a portion constituting the bottom of the recess 41a (see FIG. 2) of the main surface side drive electrode 41.

[0206] The drive pad side end portion 61b of the first drive wire 61 is connected to the side closer to the first end portion 21a than the central portion in the lateral direction Y of the drive pad 21. In the present embodiment, the drive pad side end portion 61b is connected to the first end portion 21a of the drive pad 21. In one example, the drive pad side end portion 61b is arranged to be the limit position on the third encapsulation resin side surface 53 side among the regions where wire bonding can be performed as the first end portion 21a of the drive pad 21. The drive pad side end portion 61b is connected to a portion on the semiconductor element 40 side of the central portion of the drive pad 21 in the longitudinal direction X in the longitudinal direction X.

[0207] The drive - electrode - side end portion 62a of the second drive wire 62 is connected to the second exposed - end portion 46b side rather than the central portion in the lateral direction Y of the exposed region 46 of the main - surface - side drive electrode 41. In the present embodiment, the drive - electrode - side end portion 62a is connected to the second exposed - end portion 46b. In one example, the drive - electrode - side end portion 62a is arranged to be the limit position on the fourth - side - surface 40f side of the region where wire bonding can be performed as the end portion on the fourth - side - surface 40f side of the opening 45 in the lateral direction Y. In the longitudinal direction X, the drive - electrode - side end portion 62a is arranged in alignment with the drive - electrode - side end portion 61a of the first drive wire 61. Note that the state where the drive - electrode - side end portion 62a and the drive - electrode - side end portion 61a are aligned in the longitudinal direction X includes the case where both drive - electrode - side end portions 61a and 62a overlap each other in the longitudinal direction X and the case where a part overlaps according to the manufacturing error due to wire bonding. In other words, if the deviation amount in the longitudinal direction X at the drive - electrode - side end portions 61a and 62a is within the variation range for performing wire bonding, it can be said that the drive - electrode - side end portions 61a and 62a are aligned in the longitudinal direction X.

[0208] The drive - pad - side end portion 62b of the second drive wire 62 is connected to the second - end portion 21b side rather than the central portion in the lateral direction Y of the drive pad 21. In the present embodiment, the drive - pad - side end portion 62b is connected to the second - end portion 21b of the drive pad 21. In one example, the drive - pad - side end portion 62b is arranged to be the limit position on the fourth - encapsulation - resin - side surface 54 side of the region where wire bonding can be performed as the second - end portion 21b of the drive pad 21. The drive - pad - side end portion 62b is arranged in the portion closer to the semiconductor element 40 than the central portion of the drive pad 21 in the longitudinal direction X.

[0209] The control wire 70 connects the control electrode 43 of the semiconductor element 40 and the control pad 31. The control wire 70 is connected to the control electrode 43 and the control pad 31 by, for example, wire bonding. Similar to the first embodiment, the same material as that of the first drive wire 61 and the second drive wire 62 is used for the control wire 70. The wire diameter of the control wire 70 is equal to the wire diameters of the first drive wire 61 and the second drive wire 62. Here, if the deviation amount between the wire diameter of the control wire 70 and the wire diameters of the first drive wire 61 and the second drive wire 62 is within 5% of the wire diameter of the control wire 70, it can be said that the wire diameter of the control wire 70 is equal to the wire diameters of the first drive wire 61 and the second drive wire 62. The control wire 70 has a control electrode side end portion 71 and a control pad side end portion 72. The control electrode side end portion 71 is disposed closer to the fourth encapsulation resin side surface 54 than the control pad side end portion 72.

[0210] The distance DW3 between the control electrode side end portion 71 and the drive electrode side end portion 61a of the first drive wire 61 is smaller than the distance DW1. The distance DY3 between the auxiliary line LS5 along the longitudinal direction X from the control electrode side end portion 71 and the auxiliary line LS6 along the longitudinal direction X from the control pad side end portion 72 is larger than the distance DY1 and smaller than the distance DY2. According to the semiconductor device 1 of the present embodiment, the same effects as those of (1-1) to (1-7) of the first embodiment can be obtained.

[0211] (Modification Example of the Third Embodiment) The semiconductor device 1 of the third embodiment can be modified as follows, for example. Each of the following modification examples can be combined as long as no technical contradiction occurs. In the following modification examples, parts common to the third embodiment are denoted by the same reference numerals as those in the third embodiment, and the description thereof is omitted.

[0212] · The number of drive wires 60 is not limited to two and can be arbitrarily changed. In one example, as shown in FIG. 26, the plurality of drive wires 60 may be composed of three drive wires, i.e., a first drive wire 61, a second drive wire 62, and a third drive wire 63. The third drive wire 63 is disposed between the first drive wire 61 and the second drive wire 62. In this case, the first drive wire 61 and the second drive wire 62 constitute the most separated combination among the plurality of drive wires 60. The first drive wire 61 and the second drive wire 62 connect the main surface side drive electrode 41 of the semiconductor element 40 and the drive pad 21 in a state of being separated from each other. In plan view, the first drive wire 61 and the second drive wire 62 are arranged spaced apart in the lateral direction Y. Thus, the first drive wire 61 and the second drive wire 62 that constitute the most separated combination among the plurality of drive wires 60 are the drive wires at both ends in the lateral direction Y among the plurality of drive wires 60.

[0213] The third drive wire 63 has a drive electrode side end portion 63a and a drive pad side end portion 63b. The drive electrode side end portion 63a is the end portion of the third drive wire 63 connected to the main surface side drive electrode 41. The drive pad side end portion 63b is the end portion of the third drive wire 63 connected to the drive pad 21. The drive pad side end portion 63b is arranged so as to be on the side of the fourth sealing resin side surface 54 rather than the drive electrode side end portion 63a.

[0214] In FIG. 26, the distance DW4 between the drive electrode side end portion 63a and the drive electrode side end portion 61a of the first drive wire 61 is equal to the distance DW5 between the drive electrode side end portion 63a and the drive electrode side end portion 62a of the second drive wire 62. Here, if the deviation amount between the distance DW4 and the distance DW5 is within 5% of the distance DW4, for example, it can be said that the distance DW4 and the distance DW5 are equal. The distance DW4 and the distance DW5 are larger than the distance DW3 between the control electrode side end portion 71 of the control wire 70 and the drive electrode side end portion 61a of the first drive wire 61.

[0215] Note that the position of the driving electrode side end portion 63a in the lateral direction Y can be arbitrarily changed. In one example, the driving electrode side end portion 63a may be connected to the main surface side driving electrode 41 such that the distance DW4 and the distance DW5 are different from each other.

[0216] Also, in FIG. 26, in the longitudinal direction X, the driving electrode side end portions 61a of the first driving wire 61, the driving electrode side end portions 62a of the second driving wire 62, and the driving electrode side end portions 63a of the third driving wire 63 are arranged in an aligned state. Here, the state where the driving electrode side end portions 61a, 62a, and 63a are aligned with each other in the longitudinal direction X means that the driving electrode side end portions 61a, 62a, and 63a overlap each other in the longitudinal direction X, and includes the case where a part overlaps according to the manufacturing error caused by wire bonding. In other words, if the deviation amount in the longitudinal direction X at the driving electrode side end portions 61a, 62a, and 63a is within the variation range in performing wire bonding, it can be said that the driving electrode side end portions 61a, 62a, and 63a are aligned in the longitudinal direction X.

[0217] The driving pad side end portion 63b of the third driving wire 63 is arranged in the longitudinal direction X at a portion closer to the semiconductor element 40 than the central portion of the driving pad 21 in the longitudinal direction X. The distance DW6 between the driving pad side end portion 61b of the first driving wire 61 and the driving pad side end portion 63b is larger than the distance DW4. The distance DW7 between the driving pad side end portion 62b of the second driving wire 62 and the driving pad side end portion 63b is larger than the distance DW5.

[0218] In plan view, the first drive wire 61 and the third drive wire 63 are connected to the main surface side drive electrode 41 and the drive pad 21 such that the drive pad 21 side is farther away from the main surface side drive electrode 41 side. In plan view, the distance between the first drive wire 61 and the third drive wire 63 gradually widens as it goes from the main surface side drive electrode 41 toward the drive pad 21. In plan view, the third drive wire 63 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 such that the drive pad 21 side is farther away from the main surface side drive electrode 41 side. In plan view, the distance between the third drive wire 63 and the second drive wire 62 gradually widens as it goes from the main surface side drive electrode 41 toward the drive pad 21.

[0219] · The size of the semiconductor element 40 can be arbitrarily changed. In the first example, as shown in FIG. 27, the size of the semiconductor element 40 may be made larger than the size of the semiconductor element 40 in the third embodiment. In the second example, as shown in FIG. 29, the size of the semiconductor element 40 may be made larger than the size of the semiconductor element 40 in FIG. 27.

[0220] In the first example shown in FIG. 27, the size of the semiconductor element 40 in the vertical direction X and the size in the horizontal direction Y are each larger than the size of the semiconductor element 40 in the third embodiment. Also, as the size of the semiconductor element 40 increases, the size of the opening 45 formed in the surface 40a can be increased in each of the vertical direction X and the horizontal direction Y. In FIG. 27, the size of the opening 45 in the horizontal direction Y is smaller than the size of the drive pad 21 in the horizontal direction Y. The size of the drive pad 21 in the horizontal direction Y is larger than the size of the semiconductor element 40 in the horizontal direction Y.

[0221] Similar to the third embodiment, the semiconductor device 1 has a first drive wire 61 and a second drive wire 62 as a plurality of drive wires 60. The drive electrode side end portion 61a of the first drive wire 61 is connected to the first exposed end portion 46a of the exposed region 46, similar to the drive electrode side end portion 61a of the third embodiment. The drive pad side end portion 61b of the first drive wire 61 is connected to the first end portion 21a of the drive pad 21, similar to the drive pad side end portion 61b of the third embodiment. The drive electrode side end portion 62a of the second drive wire 62 is connected to the end portion on the fourth side surface 40f side of the semiconductor element 40 among the openings 45 in the lateral direction Y, similar to the drive electrode side end portion 62a of the third embodiment. The drive pad side end portion 62b of the second drive wire 62 is connected to the second end portion 21b of the drive pad 21, similar to the drive pad side end portion 62b of the third embodiment. Similar to the third embodiment, in the longitudinal direction X, the drive electrode side end portion 61a and the drive electrode side end portion 62a are arranged in the lateral direction Y in a state where they are aligned with each other. The drive pad side end portion 61b and the drive pad side end portion 62b are each connected to a portion on the semiconductor element 40 side from the central portion of the drive pad 21 in the longitudinal direction X.

[0222] In a plan view, the distance DW2 between the drive pad side end portion 61b and the drive pad side end portion 62b is larger than the distance DW1 in the lateral direction Y between the drive electrode side end portion 61a and the drive electrode side end portion 62a. In FIG. 27, the distance DY1 in the lateral direction Y between the auxiliary line LS1 along the longitudinal direction X from the drive electrode side end portion 61a and the auxiliary line LS2 along the longitudinal direction X from the drive pad side end portion 61b is smaller than the distance DY2 in the lateral direction Y between the auxiliary line LS3 along the longitudinal direction X from the drive electrode side end portion 62a and the auxiliary line LS4 along the longitudinal direction X from the drive pad side end portion 62b. Thus, in a plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 such that the drive pad 21 side is farther away from the main surface side drive electrode 41 side. In a plan view, the interval between the first drive wire 61 and the second drive wire 62 gradually widens as it goes from the main surface side drive electrode 41 to the drive pad 21.

[0223] According to this configuration, since the distance between the first drive wire 61 and the second drive wire 62 can be increased, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be reduced.

[0224] · In the modification example of FIG. 27, the number of drive wires 60 is not limited to two and can be arbitrarily changed. In one example, as shown in FIG. 28, it may be composed of three drive wires, namely a first drive wire 61, a second drive wire 62, and a third drive wire 63, as the plurality of drive wires 60. The third drive wire 63 is disposed between the first drive wire 61 and the second drive wire 62. In this case, the first drive wire 61 and the second drive wire 62 constitute the most separated combination among the plurality of drive wires 60. The first drive wire 61 and the second drive wire 62 connect the main surface side drive electrode 41 and the drive pad 21 of the semiconductor element 40 in a separated state from each other. In plan view, the first drive wire 61 and the second drive wire 62 are arranged separated in the lateral direction Y. The first drive wire 61 and the second drive wire 62 are the drive wires at both ends in the lateral direction Y among the plurality of drive wires 60.

[0225] The third drive wire 63 has a drive electrode side end portion 63a and a drive pad side end portion 63b. The distance DW4 between the drive electrode side end portion 63a and the drive electrode side end portion 61a of the first drive wire 61 is equal to the distance DW5 between the drive electrode side end portion 63a and the drive electrode side end portion 62a of the second drive wire 62. Here, if the deviation amount between the distance DW4 and the distance DW5 is within 5% of the distance DW4, for example, it can be said that the distance DW4 and the distance DW5 are equal.

[0226] Note that the arrangement position of the drive electrode side end portion 63a with respect to the main surface side drive electrode 41 can be arbitrarily changed. In one example, the drive electrode side end portion 63a may be connected to the main surface side drive electrode 41 such that the distance DW4 and the distance DW5 are different from each other.

[0227] Also, in FIG. 28, in the vertical direction X, the drive electrode side end portions 61a of the first drive wire 61, the drive electrode side end portions 62a of the second drive wire 62, and the drive electrode side end portions 63a of the third drive wire 63 are arranged in an aligned state. Here, the state where the drive electrode side end portions 61a, 62a, and 63a are aligned in the vertical direction X means that the drive electrode side end portions 61a, 62a, and 63a in the vertical direction X overlap each other, and includes the case where a part overlaps according to the manufacturing error caused by wire bonding. In other words, if the displacement amount in the vertical direction X at the drive electrode side end portions 61a, 62a, and 63a is within the variation range in performing wire bonding, it can be said that the drive electrode side end portions 61a, 62a, and 63a are aligned in the vertical direction X.

[0228] The drive pad side end portion 63b of the third drive wire 63 is arranged in a portion closer to the semiconductor element 40 side than the central portion of the drive pad 21 in the vertical direction X. The distance DW6 between the drive pad side end portion 61b of the first drive wire 61 and the drive pad side end portion 63b is larger than the distance DW4. The distance DW7 between the drive pad side end portion 62b of the second drive wire 62 and the drive pad side end portion 63b is larger than the distance DW5.

[0229] In a plan view, the first drive wire 61 and the third drive wire 63 are connected to the main surface side drive electrode 41 and the drive pad 21 so as to be farther away from the main surface side drive electrode 41 side than the drive pad 21 side. In a plan view, the interval between the first drive wire 61 and the third drive wire 63 gradually widens as it goes from the main surface side drive electrode 41 to the drive pad 21. In a plan view, the third drive wire 63 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so as to be farther away from the main surface side drive electrode 41 side than the drive pad 21 side. In a plan view, the interval between the third drive wire 63 and the second drive wire 62 gradually widens as it goes from the main surface side drive electrode 41 to the drive pad 21.

[0230] Note that in a plan view, the inclination angle of the third drive wire 63 with respect to the vertical direction X can be arbitrarily changed. In one example, the inclination angle of the third drive wire 63 with respect to the vertical direction X may be equal to the inclination angle of the first drive wire 61 with respect to the vertical direction X or the inclination angle of the second drive wire 62 with respect to the vertical direction X.

[0231] In the second example shown in FIG. 29, the shape of the semiconductor element 40 in a plan view is square. The main surface side drive electrode 41 (source electrode) formed on the surface 40a of the semiconductor element 40 has a notch 41b formed at the end on the second side surface 40d and the third side surface 40e side of the semiconductor element 40. The control electrode 43 is formed in the notch 41b.

[0232] The semiconductor device 1 of the second example shown in FIG. 29 includes a first drive wire 61, a second drive wire 62, a third drive wire 63, and a fourth drive wire 64 as a plurality of drive wires 60. The third drive wire 63 and the fourth drive wire 64 are disposed between the first drive wire 61 and the second drive wire 62. In this case, the first drive wire 61 and the second drive wire 62 constitute the most separated combination among the plurality of drive wires 60. The first drive wire 61 and the second drive wire 62 are drive wires at both ends in the lateral direction Y among the plurality of drive wires 60. When viewed from the vertical direction X, the drive wires 61 to 64 are arranged so as to overlap each other. In a plan view, the first drive wire 61 and the third drive wire 63 intersect. The fourth drive wire 64 and the second drive wire 62 intersect.

[0233] The drive electrode side end portion 61a of the first drive wire 61 is arranged so as to be closer to the third encapsulation resin side surface 53 than the drive pad side end portion 61b of the first drive wire 61. The drive electrode side end portion 62a of the second drive wire 62 is arranged so as to be closer to the third encapsulation resin side surface 53 than the drive pad side end portion 62b of the second drive wire 62.

[0234] The third drive wire 63 has a drive electrode side end 63a and a drive pad side end 63b. The drive electrode side end 63a is the end of the third drive wire 63 that is connected to the main surface side drive electrode 41. The drive pad side end 63b is the end of the third drive wire 63 that is connected to the drive pad 21. The fourth drive wire 64 has a drive electrode side end 64a and a drive pad side end 63b. The drive electrode side end 64a is the end of the fourth drive wire 64 that is connected to the main surface side drive electrode 41. The drive pad side end 64b is the end of the fourth drive wire 64 that is connected to the drive pad 21.

[0235] The drive electrode side end 61a of the first drive wire 61 is arranged so as to be on the third side surface 40e side rather than the drive electrode side ends 61b - 61d of the respective drive wires 62 - 64. The drive electrode side end 63a of the third drive wire 63 is arranged so as to be on the third side surface 40e side rather than the drive electrode side end 64a of the fourth drive wire 64 and the drive electrode side end 62a of the second drive wire 62. The drive electrode side end 64a is arranged so as to be on the third side surface 40e side rather than the drive electrode side end 62a. The drive electrode side end 61a and the drive electrode side end 63a are connected to the first exposed end 46a side rather than the central part in the lateral direction Y of the exposed area 46 of the main surface side drive electrode 41. The drive electrode side end 61a is connected to the first exposed end 46a side rather than the drive electrode side end 63a in the lateral direction Y. The drive electrode side end 64a and the drive electrode side end 62a are connected to the second exposed end 46b side rather than the central part in the lateral direction Y of the exposed area 46. The drive electrode side end 62a is connected to the second exposed end 46b side rather than the drive electrode side end 64a.

[0236] The drive electrode side end portions 61a of the first drive wire 61 and 64a of the fourth drive wire 64 are displaced in the longitudinal direction X from the drive electrode side end portions 62a of the second drive wire 62 and 63a of the third drive wire 63. Further, the drive electrode side end portions 61a and 64a are arranged in a state of being aligned with each other in the longitudinal direction X. The drive electrode side end portions 62a and 63a are arranged in a state of being aligned with each other in the longitudinal direction X. Specifically, the drive electrode side end portions 61a, 64a are arranged so as to be on the first side surface 40c side of the semiconductor element 40 rather than the drive electrode side end portions 62a, 63a. For this reason, the lengths of the first drive wire 61 and the fourth drive wire 64 are longer than the lengths of the second drive wire 62 and the third drive wire 63. Here, the state in which the drive electrode side end portions 61a, 64a are aligned in the longitudinal direction X means that both drive electrode side end portions 61a, 64a in the longitudinal direction X overlap each other, and includes the case where a part overlaps according to a manufacturing error due to wire bonding. In other words, if the amount of displacement in the longitudinal direction X at the drive electrode side end portions 61a, 64a is within the variation range in performing wire bonding, it can be said that the drive electrode side end portions 61a, 64a are aligned in the longitudinal direction X. Further, the state in which the drive electrode side end portions 62a, 63a are aligned with each other in the longitudinal direction X means that both drive electrode side end portions 62a, 63a in the longitudinal direction X overlap each other, and includes the case where a part overlaps according to a manufacturing error due to wire bonding. In other words, if the amount of displacement in the longitudinal direction X at the drive electrode side end portions 62a, 63a is within the variation range in performing wire bonding, it can be said that the drive electrode side end portions 62a, 63a are aligned in the longitudinal direction X.

[0237] Note that the arrangement positions in the longitudinal direction X of the drive electrode side end portions 61a to 64a can be arbitrarily changed. In one example, the drive electrode side end portions 61a to 64a may be displaced from each other. Further, the drive electrode side end portions 61a to 64a may be arranged in the lateral direction Y in a state of being aligned with each other.

[0238] The drive pad side end 61b of the first drive wire 61 is arranged so as to be closer to the third sealing resin side surface 53 than the drive pad side ends 62b to 64b of the respective drive wires 62 to 64. The drive pad side end 63b of the third drive wire 63 is arranged so as to be closer to the third sealing resin side surface 53 than the drive pad side end 64b of the fourth drive wire 64 and the drive pad side end 62b of the second drive wire 62. The drive pad side end 64b is arranged so as to be closer to the third sealing resin side surface 53 than the drive pad side end 62b. The drive pad side end 61b and the drive pad side end 63b are connected to the first end 21a side rather than the central portion in the lateral direction Y of the drive pad 21. The drive pad side end 61b is connected to the first end 21a side rather than the drive pad side end 63b. The drive pad side end 64b and the drive pad side end 62b are connected to the second end 21b side rather than the central portion in the lateral direction Y of the drive pad 21. The drive pad side end 62b is connected to the second end 21b side rather than the drive pad side end 62b.

[0239] The distance DW10 between the auxiliary line LS1 along the longitudinal direction X from the drive electrode side end 61a and the auxiliary line LS9 along the longitudinal direction X from the drive electrode side end 63a in the lateral direction Y is smaller than the distance DW11 between the auxiliary line LS9 and the auxiliary line LS11 along the longitudinal direction X from the drive electrode side end 64a. The distance DW12 between the auxiliary line LS3 along the longitudinal direction X from the drive electrode side end 62a and the auxiliary line LS11 in the lateral direction Y is slightly smaller than the distance DW10. Note that the arrangement positions in the lateral direction Y of the drive electrode side ends 61a to 64a can be arbitrarily changed under the limitation that the drive electrode side end 61a is located closest to the third sealing resin side surface 53 and the drive electrode side end 62a is located closest to the fourth sealing resin side surface 54 among the drive electrode side ends 61a to 64a. In one example, the drive electrode side ends 61a to 64a may be arranged such that the distance DW12 and the distance DW10 are equal to each other.

[0240] The distance DY1 between the auxiliary line LS1 and the auxiliary line LS2 along the longitudinal direction X from the drive pad side end 61b in the lateral direction Y is smaller than the distance DY2 between the auxiliary line LS3 and the auxiliary line LS4 along the longitudinal direction X from the drive pad side end 62b. The distance DY3 between the auxiliary line LS9 and the auxiliary line LS10 along the longitudinal direction X from the drive pad side end 63b in the lateral direction Y is smaller than the distance DY4 between the auxiliary line LS11 and the auxiliary line LS12 along the longitudinal direction X from the drive pad side end 64b. In FIG. 29, the distance DY1 is smaller than the distance DY3. The distance DY2 is larger than the distance DY4.

[0241] Note that the drive electrode side end 61a may be arranged so as to be the limit position on the fourth side surface 40f side among the regions where wire bonding can be performed in the first exposed end 46a of the exposed region 46 of the main surface side drive electrode 41 in the lateral direction Y. The drive pad side end 61b may be arranged so as to be the limit position on the third encapsulation resin side surface 53 side among the regions where wire bonding can be performed as the first end 21a of the drive pad 21.

[0242] Also, the drive electrode side end 62a may be arranged so as to be the limit position on the fourth side surface 40f side among the regions where wire bonding can be performed in the second exposed end 46b of the exposed region 46 of the main surface side drive electrode 41 in the lateral direction Y. The drive pad side end 62b may be arranged so as to be the limit position on the fourth encapsulation resin side surface 54 side among the regions where wire bonding can be performed as the second end 21b of the drive pad 21.

[0243] In a plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 such that the drive pad 21 side is farther away than the main surface side drive electrode 41 side. In a plan view, the lateral direction Y interval between the first drive wire 61 and the second drive wire 62 gradually widens as going from the main surface side drive electrode 41 toward the drive pad 21.

[0244] · The arrangement position of the semiconductor element 40 with respect to the substrate main body 11 can be arbitrarily changed. In the first example, as shown in FIG. 30, the semiconductor element 40 may be arranged at a portion closer to the second encapsulation resin side surface 52 of the substrate main body 11. Specifically, a first distance D1 between the semiconductor element 40 and an edge of the first flange portion 19a of the substrate main body 11 on the second encapsulation resin side surface 52 side in the longitudinal direction X is smaller than half of a second distance D2 between the semiconductor element 40 and an end portion of the through hole 10c of the substrate main body 11 on the second encapsulation resin side surface 52 side in the longitudinal direction X. The first distance D1 is smaller than one-third of the second distance D2. In FIG. 30, the first distance D1 is approximately one-seventh of the second distance D2.

[0245] In the lateral direction Y, the semiconductor element 40 is arranged at the central portion of the substrate main body 11. Specifically, a third distance D3 between the semiconductor element 40 and an edge of the second flange portion 19b of the substrate main body 11 on the third encapsulation resin side surface 53 side in the lateral direction Y is equal to a fourth distance D4 between the semiconductor element 40 and an edge of the third flange portion 19c of the substrate main body 11 on the fourth encapsulation resin side surface 54 side in the lateral direction Y.

[0246] According to such a configuration, since the distance between the opening 45 of the semiconductor element 40 and the drive pad 21 becomes smaller, the first drive wire 61 and the second drive wire 62 can be shortened respectively. Therefore, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be further reduced.

[0247] In the second example, as shown in FIG. 31, the semiconductor element 40 may be disposed in a portion of the substrate main body 11 closer to the second sealing resin side surface 52 and closer to the fourth sealing resin side surface 54. Specifically, a first distance D1 in the longitudinal direction X between the semiconductor element 40 and the edge on the second sealing resin side surface 52 side of the first flange portion 19a of the substrate main body 11 is smaller than 1 / 2 of a second distance D2 in the longitudinal direction X between the semiconductor element 40 and the end portion on the second sealing resin side surface 52 side of the through hole 10c of the substrate main body 11. The first distance D1 is smaller than 1 / 3 of the second distance D2. In FIG. 31, the first distance D1 is approximately 1 / 7 of the second distance D2. Also, a third distance D3 in the lateral direction Y between the semiconductor element 40 and the edge on the third sealing resin side surface 53 side of the second flange portion 19b of the substrate main body 11 is larger than a fourth distance D4 in the lateral direction Y between the semiconductor element 40 and the edge on the fourth sealing resin side surface 54 side of the third flange portion 19c of the substrate main body 11. The fourth distance D4 is smaller than 1 / 2 of the third distance D3. The fourth distance D4 is smaller than 1 / 3 of the third distance D3. In FIG. 31, the fourth distance D4 is approximately 1 / 10 of the third distance D3.

[0248] According to such a configuration, since the distance between the semiconductor element 40 and the drive pad 21 becomes smaller, the first drive wire 61 and the second drive wire 62 can be made even shorter respectively. Therefore, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be further reduced.

[0249] · The lead portion 16 may be omitted from the substrate 10 of the semiconductor device 1 of the third embodiment. In this case, in the lateral direction Y, the drive pad 21 and the control pad 31 are adjacent to each other. Also, the size of the drive pad 21 in the lateral direction Y may be increased by the amount of the lead portion 16 omitted. According to this configuration, since the distance DW2 between the drive pad side end portion 61b of the first drive wire 61 and the drive pad side end portion 62b of the second drive wire 62 can be made large, the inductance from the main surface side drive electrode 41 to the drive pad 21 can be reduced.

[0250] (Fourth Embodiment) Referring to FIG. 32, a fourth embodiment of the semiconductor device 1 will be described. The semiconductor device 1 of this embodiment is mainly different from the semiconductor device 1 of the first embodiment in that a Schottky barrier diode is mounted as the semiconductor element 40 instead of the MOSFET, and the first drive lead 20C and the second drive lead 20D are provided instead of the drive lead 20 and the control lead 30. In this embodiment, for convenience, the same components as those in the first embodiment may be denoted by the same reference numerals, and the description thereof may be omitted.

[0251] As shown in FIG. 32, in a plan view, the first drive lead 20C and the second drive lead 20D are arranged on the second encapsulation resin side surface 52 side of the encapsulation resin 50 with respect to the substrate 10 in a state of being separated from the substrate 10 in the longitudinal direction X. The first drive lead 20C and the second drive lead 20D are arranged to be separated from each other in the lateral direction Y. A lead portion 16 is arranged between the first drive lead 20C and the second drive lead 20D in the lateral direction Y. In a plan view, the first drive lead 20C and the second drive lead 20D are symmetric with respect to the center line C along the longitudinal direction X from the central portion of the semiconductor device 1 in the longitudinal direction X. In the following description, each component of the first drive lead 20C and the second drive lead 20D will be described with the letters C and D appended after the reference numeral.

[0252] The first drive lead 20C is arranged on the third encapsulation resin side surface 53 side with respect to the lead portion 16. The first drive lead 20C has a first drive pad 21C, a first drive terminal 22C, and a first connection portion 23C that connects the first drive pad 21C and the first drive terminal 22C. The first drive pad 21C and the first connection portion 23C are arranged between the substrate 10 and the second encapsulation resin side surface 52 in the longitudinal direction X. The first drive pad 21C and the first connection portion 23C are arranged on the third encapsulation resin side surface 53 side of the central portion of the encapsulation resin 50 in the lateral direction Y. The first drive terminal 22C constitutes an anode terminal.

[0253] In plan view, the shape of the first drive pad 21C is a substantially rectangular shape in which the lateral direction Y is the long side direction and the longitudinal direction X is the short side direction. The first drive pad 21C has a first end portion 21c and a second end portion 21d which are both end portions in the lateral direction Y. The first end portion 21c is the end portion on the side of the third encapsulation resin side surface 53 of the first drive pad 21C. The second end portion 21d is the end portion on the side of the fourth encapsulation resin side surface 54 of the first drive pad 21C.

[0254] The second drive lead 20D is arranged so as to be on the side of the fourth encapsulation resin side surface 54 with respect to the lead portion 16. The second drive lead 20D has a second drive pad 21D, a second drive terminal 22D, and a second connection portion 23D that connects the second drive pad 21D and the second drive terminal 22D. The second drive pad 21D and the second connection portion 23D are arranged between the substrate 10 and the second encapsulation resin side surface 52 in the longitudinal direction X. The second drive pad 21D and the second connection portion 23D are arranged on the side of the fourth encapsulation resin side surface 54 rather than the central portion of the encapsulation resin 50 in the lateral direction Y. The second drive terminal 22D constitutes an anode terminal.

[0255] The second drive pad 21D has a first end portion 21e and a second end portion 21f which are both end portions in the lateral direction Y. The first end portion 21e is the end portion on the side of the third encapsulation resin side surface 53 of the second drive pad 21D. The second end portion 21f is the end portion on the side of the fourth encapsulation resin side surface 54 of the second drive pad 21D.

[0256] The first drive pad 21C and the second drive pad 21D are each arranged on the side of the encapsulation resin top surface 56 rather than the main surface 10a of the substrate 10 in the thickness direction Z. The first drive pad 21C and the second drive pad 21D are each arranged on the side of the encapsulation resin top surface 56 rather than the surface 40a of the semiconductor element 40 in the thickness direction Z.

[0257] The semiconductor element 40 contains SiC. In the present embodiment, a Schottky barrier diode is used as the semiconductor element 40. The semiconductor element 40 is formed in a flat plate shape. Specifically, in a plan view, the shape of the semiconductor element 40 is rectangular with the lateral direction Y being the long side direction and the longitudinal direction X being the short side direction. In the present embodiment, the semiconductor element 40 is disposed at the center of the inner main body 12. Specifically, in a plan view, the first distance D1 between the semiconductor element 40 and the edge on the second sealing resin side surface 52 side of the first flange portion 19a among the semiconductor element 40 and the inner main body 12 is equal to the second distance D2 between the semiconductor element 40 and the narrow-width portion 14 of the inner main body 12. Also, the third distance D3 between the semiconductor element 40 and the edge on the third sealing resin side surface 53 side of the second flange portion 19b among the semiconductor element 40 and the inner main body 12 is equal to the fourth distance D4 between the semiconductor element 40 and the edge on the fourth sealing resin side surface 54 side of the third flange portion 19c among the semiconductor element 40 and the inner main body 12. Here, if the deviation amount between the first distance D1 and the second distance D2 is within 5% of the first distance D1, for example, it can be said that the first distance D1 and the second distance D2 are equal to each other. Also, if the deviation amount between the third distance D3 and the fourth distance D4 is within 5% of the third distance D3, for example, it can be said that the third distance D3 and the fourth distance D4 are equal to each other.

[0258] A main surface side drive electrode 41 is formed on the surface 40a of the semiconductor element 40, and a back surface side drive electrode (not shown) is formed on the back surface facing the opposite side of the surface 40a in the thickness direction Z. The main surface side drive electrode 41 constitutes an anode electrode, and the back surface side drive electrode constitutes a cathode electrode.

[0259] A passivation film 44 as an insulating film is formed on the main surface side drive electrode 41 of the semiconductor element 40. An opening 45 is formed in the passivation film 44. The opening 45 exposes the main surface side drive electrode 41.

[0260] In plan view, the shape of the opening 45 is a rectangular shape in which the lateral direction Y is the long side direction and the longitudinal direction X is the short side direction. The size of the opening 45 in the lateral direction Y is smaller than the size of the first drive pad 21C in the lateral direction Y and the size of the second drive pad 21D in the lateral direction Y. In other words, the size of the first drive pad 21C in the lateral direction Y and the size of the second drive pad 21D in the lateral direction Y are larger than the size of the opening 45 in the lateral direction Y.

[0261] The opening 45 is provided at the central portion in the longitudinal direction X of the surface 40a of the semiconductor element 40. Specifically, the first distance DC1 between the opening 45 and the first side surface 40c of the semiconductor element 40, the second distance DC2 between the opening 45 and the second side surface 40d of the semiconductor element 40, the third distance DC3 between the opening 45 and the third side surface 40e of the semiconductor element 40, and the fourth distance DC4 between the opening 45 and the fourth side surface 40f of the semiconductor element 40 are equal to each other. Here, if the maximum deviation amount of the first distance DC1, the second distance DC2, the third distance DC3, and the fourth distance DC4 is within 5% of the first distance DC1, for example, it can be said that the first distance DC1, the second distance DC2, the third distance DC3, and the fourth distance DC4 are equal to each other.

[0262] The main surface side drive electrode 41 has an exposed region 46 exposed by the opening 45. The exposed region 46 has a first exposed end 46a and a second exposed end 46b which are both ends in the lateral direction Y. The first exposed end 46a is the end on the third side surface 40e side of the semiconductor element 40 in the exposed region 46. The second exposed end 46b is the end on the fourth side surface 40f side of the semiconductor element 40 in the exposed region 46.

[0263] The semiconductor device 1 includes a plurality of drive wires 60. In the present embodiment, the plurality of drive wires 60 are composed of two drive wires, namely a first drive wire 61 and a second drive wire 62. That is, the first drive wire 61 and the second drive wire 62 form the most separated combination among the plurality of drive wires 60. The first drive wire 61 is arranged closer to the control wire 70 side than the second drive wire 62. The first drive wire 61 and the second drive wire 62 connect the main surface side drive electrode 41 of the semiconductor element 40 and the drive pad 21 in a state of being separated from each other. In a plan view, the first drive wire 61 and the second drive wire 62 are arranged separated from each other in the lateral direction Y. The first drive wire 61 and the second drive wire 62 are the drive wires at both ends in the lateral direction Y among the plurality of drive wires 60.

[0264] The first drive wire 61 and the second drive wire 62 are made of the same metal. In the present embodiment, the first drive wire 61 and the second drive wire 62 contain aluminum. The wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62. Here, if the deviation amount between the wire diameter of the first drive wire 61 and the wire diameter of the second drive wire 62 is within 5% of the wire diameter of the first drive wire 61, it can be said that the wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62.

[0265] The first drive wire 61 connects the main surface side drive electrode 41 of the semiconductor element 40 and the first drive pad 21C. The second drive wire 62 connects the main surface side drive electrode 41 and the second drive pad 21D. The first drive wire 61 and the second drive wire 62 are each connected to the main surface side drive electrode 41 and the respective drive pads 21C, 21D, for example, by wire bonding.

[0266] In plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 such that they are farther from the main surface side drive electrode 41 side than from the drive pad 21 side. In plan view, the distance between the first drive wire 61 and the second drive wire 62 widens as it goes from the main surface side drive electrode 41 toward the drive pad 21 side. Hereinafter, the configuration of the first drive wire 61 and the second drive wire 62 will be described in detail.

[0267] The drive electrode side end portion 61a of the first drive wire 61 is disposed closer to the fourth sealing resin side surface 54 than the drive pad side end portion 61b of the first drive wire 61. The drive electrode side end portion 62a of the second drive wire 62 is disposed closer to the third sealing resin side surface 53 than the drive pad side end portion 62b of the second drive wire 62. In plan view, the distance DW2 between the drive pad side end portion 61b and the drive pad side end portion 62b is larger than the distance DW1 between the drive electrode side end portion 61a and the drive electrode side end portion 62a.

[0268] The distance in the lateral direction Y between the auxiliary line LS1 along the longitudinal direction X from the drive electrode side end portion 61a and the auxiliary line LS2 along the longitudinal direction X from the drive pad side end portion 61b is defined as the distance DY1, and the distance in the lateral direction Y between the auxiliary line LS3 along the longitudinal direction X from the drive electrode side end portion 62a and the auxiliary line LS4 along the longitudinal direction X from the drive pad side end portion 62b is defined as the distance DY2, and they are equal to each other. Here, if the deviation amount between the distance DY1 and the distance DY2 is within, for example, 5% of the distance DY1, it can be said that the distance DY1 and the distance DY2 are equal to each other.

[0269] The drive electrode side end portion 61a of the first drive wire 61 is connected to the first exposed end portion 46a side rather than the central portion in the lateral direction Y of the exposed region 46 of the main surface side drive electrode 41. In the present embodiment, the drive electrode side end portion 61a is connected to the first exposed end portion 46a. In one example, the drive electrode side end portion 61a is arranged to be the limit position on the third side surface 40e side in the region where wire bonding is possible as the first exposed end portion 46a of the exposed region 46 of the main surface side drive electrode 41.

[0270] The drive pad side end portion 61b of the first drive wire 61 is connected to the first end portion 21c side rather than the central portion in the lateral direction Y of the first drive pad 21C. In the present embodiment, the drive pad side end portion 61b is connected to the first end portion 21c of the first drive pad 21C. In one example, the drive pad side end portion 61b is arranged to be at the limit position on the side of the third encapsulation resin side surface 53 in the region where wire bonding can be performed as the first end portion 21c of the first drive pad 21C. The drive pad side end portion 61b is connected to the portion on the semiconductor element 40 side rather than the central portion in the longitudinal direction X of the first drive pad 21C in the longitudinal direction X.

[0271] The drive electrode side end portion 62a of the second drive wire 62 is connected to the second exposed end portion 46b side rather than the central portion in the lateral direction Y of the exposed region 46 of the main surface side drive electrode 41. In the present embodiment, the drive electrode side end portion 62a is connected to the second exposed end portion 46b. In one example, the drive electrode side end portion 62a is arranged to be at the limit position on the side of the fourth side surface 40f of the semiconductor element 40 in the region where wire bonding can be performed as the end portion on the fourth side surface 40f side of the opening 45 in the lateral direction Y. In the longitudinal direction X, the drive electrode side end portion 62a is arranged in the lateral direction Y in a state aligned with the drive electrode side end portion 61a of the first drive wire 61. Here, the state where the drive electrode side end portion 62a and the drive electrode side end portion 61a are aligned in the longitudinal direction X means that both drive electrode side end portions 61a, 62a in the longitudinal direction X overlap each other, and includes the case where a part overlaps according to the manufacturing error due to wire bonding. In other words, if the deviation amount in the longitudinal direction X at the drive electrode side end portions 61a, 62a is within the variation range in performing wire bonding, it can be said that the drive electrode side end portions 61a, 62a are aligned in the longitudinal direction X.

[0272] The drive pad side end portion 62b of the second drive wire 62 is connected to the second end portion 21f side rather than the central portion in the lateral direction Y of the second drive pad 21D. In the present embodiment, the drive pad side end portion 62b is connected to the second end portion 21f of the second drive pad 21D. In one example, the drive pad side end portion 62b is arranged to be the limit position on the side of the fourth encapsulating resin side surface 54 within the region where wire bonding can be performed as the second end portion 21f of the second drive pad 21D. The drive pad side end portion 62b is connected to the portion on the semiconductor element 40 side rather than the central portion in the longitudinal direction X of the drive pad 21 in the longitudinal direction X.

[0273] According to the semiconductor device 1 of the present embodiment, in addition to the effects of (1-1), (1-5), and (1-7) of the first embodiment, the following effects can be obtained. (4-1) The first drive pad 21C of the first drive lead 20C and the second drive pad 21D of the second drive lead 20D are arranged in a state of being separated from each other in the lateral direction Y. According to this configuration, the distance DW2 between the drive pad side end portion 61b of the first drive wire 61 and the drive pad side end portion 62b of the second drive wire 62 can be made large. Therefore, the inductance from the main surface side drive electrode 41 to the drive pad 21 can be reduced.

[0274] (4-2) The drive pad side end portion 61b is connected to the first end portion 21e of the first drive pad 21C, and the drive pad side end portion 62b is connected to the second end portion 21f of the second drive pad 21D. According to this configuration, the distance DW2 between the drive pad side end portion 61b and the drive pad side end portion 62b can be made even larger. Therefore, the inductance from the main surface side drive electrode 41 to the drive pad 21 can be further reduced.

[0275] (Modification example of the fourth embodiment) The semiconductor device 1 of the fourth embodiment can be modified as follows, for example. The following modification examples can be combined as long as no technical contradiction occurs. In the following modification examples, for the parts common to the third embodiment, the same reference numerals as those in the fourth embodiment are given and the description thereof is omitted.

[0276] · The number of drive wires 60 is not limited to two and can be arbitrarily changed. In one example, as shown in FIG. 33, the plurality of drive wires 60 may be composed of four drive wires, namely a first drive wire 61, a second drive wire 62, a third drive wire 63, and a fourth drive wire 64. The third drive wire 63 and the fourth drive wire 64 are arranged between the first drive wire 61 and the second drive wire 62. In this case, the first drive wire 61 and the second drive wire 62 form the most separated combination among the plurality of drive wires 60. The first drive wire 61, the second drive wire 62, the third drive wire 63, and the fourth drive wire 64 are arranged spaced apart in the lateral direction Y. Thus, the first drive wire 61 and the second drive wire 62 that form the most separated combination among the plurality of drive wires 60 are the drive wires at both ends in the lateral direction Y among the plurality of drive wires 60.

[0277] The third drive wire 63 has a drive electrode side end portion 63a and a drive pad side end portion 63b. The drive electrode side end portion 63a is the end portion of the third drive wire 63 that is connected to the main surface side drive electrode 41. The drive pad side end portion 63b is the end portion of the third drive wire 63 that is connected to the first drive pad 21C. The drive pad side end portion 63b is arranged so as to be on the side of the third sealing resin side surface 53 rather than the drive electrode side end portion 63a. The fourth drive wire 64 has a drive electrode side end portion 64a and a drive pad side end portion 64b. The drive electrode side end portion 64a is the end portion of the fourth drive wire 64 that is connected to the main surface side drive electrode 41. The drive pad side end portion 64b is the end portion of the fourth drive wire 64 that is connected to the second drive pad 21D. The drive pad side end portion 64b is arranged so as to be on the side of the fourth sealing resin side surface 54 rather than the drive electrode side end portion 64a. In FIG. 33, the drive pad side end portion 63b is connected to the second end portion 21d of the first drive pad 21C. The drive pad side end portion 64b is connected to the first end portion 21e of the second drive pad 21D.

[0278] Also, in FIG. 33, in the vertical direction X, the drive electrode side end portions 61a of the first drive wire 61, the drive electrode side end portions 62a of the second drive wire 62, the drive electrode side end portions 63a of the third drive wire 63, and the drive electrode side end portions 64a of the fourth drive wire 64 are arranged in the horizontal direction Y in a state where they are aligned with each other. Here, the state where the drive electrode side end portions 61a, 62a, 63a, and 64a are aligned with each other in the vertical direction X means that the drive electrode side end portions 61a, 62a, 63a, and 64a in the vertical direction X overlap each other, and includes the case where a part overlaps according to the manufacturing error caused by wire bonding. In other words, if the deviation amount in the vertical direction X at the drive electrode side end portions 61a, 62a, 63a, and 64a is within the variation range in performing wire bonding, it can be said that the drive electrode side end portions 61a, 62a, 63a, and 64a are aligned in the vertical direction X.

[0279] In a plan view, the first drive wire 61 and the third drive wire 63 are connected to the main surface side drive electrode 41 and the first drive pad 21C such that they are farther from the main surface side drive electrode 41 side than the first drive pad 21C side. In a plan view, the distance between the first drive wire 61 and the third drive wire 63 gradually widens as it goes from the main surface side drive electrode 41 toward the drive pad 21. In a plan view, the fourth drive wire 64 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the second drive pad 21D such that they are farther from the main surface side drive electrode 41 side than the second drive pad 21D side. In a plan view, the distance between the fourth drive wire 64 and the second drive wire 62 gradually widens as it goes from the main surface side drive electrode 41 toward the drive pad 21. The third drive wire 63 and the fourth drive wire 64 are connected to the main surface side drive electrode 41 and the first drive pad 21C and the second drive pad 21D such that they are farther from the main surface side drive electrode 41 side than the first drive pad 21C and the second drive pad 21D sides. In a plan view, the distance between the third drive wire 63 and the fourth drive wire 64 gradually widens as it goes from the main surface side drive electrode 41 toward the first drive pad 21C and the second drive pad 21D.

[0280] · The size of the semiconductor element 40 can be arbitrarily changed. The size of the semiconductor element 40 may be made larger than the size of the semiconductor element 40 in the fourth embodiment in at least one of the longitudinal direction X and the lateral direction Y.

[0281] · The arrangement position of the semiconductor element 40 with respect to the substrate 10 can be arbitrarily changed. In the first example, the semiconductor element 40 may be arranged in a portion of the inner main body 12 closer to the second sealing resin side surface 52. Specifically, a first distance D1 in the longitudinal direction X between the semiconductor element 40 and the edge of the first flange portion 19a of the inner main body 12 on the second sealing resin side surface 52 side is smaller than a second distance D2 in the longitudinal direction X between the semiconductor element 40 and the narrow width portion 14 of the inner main body 12.

[0282] According to this configuration, since the distance between the opening 45 of the semiconductor element 40 and the drive pad 21 is reduced, the first drive wire 61 and the second drive wire 62 can be shortened respectively. Therefore, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be further reduced.

[0283] In the second example, the semiconductor element 40 may be arranged in a portion of the inner main body 12 closer to the second sealing resin side surface 52 and closer to the fourth sealing resin side surface 54. Specifically, a first distance D1 in the longitudinal direction X between the semiconductor element 40 and the edge of the first flange portion 19a of the inner main body 12 on the second sealing resin side surface 52 side is smaller than a second distance D2 in the longitudinal direction X between the semiconductor element 40 and the narrow width portion 14 of the inner main body 12. Also, a third distance D3 in the lateral direction Y between the semiconductor element 40 and the edge of the second flange portion 19b of the inner main body 12 on the third sealing resin side surface 53 side is larger than a fourth distance D4 in the lateral direction Y between the semiconductor element 40 and the edge of the third flange portion 19c of the inner main body 12 on the fourth sealing resin side surface 54 side.

[0284] According to such a configuration, since the distance between the semiconductor element 40 and the drive pad 21 becomes even smaller, the first drive wire 61 and the second drive wire 62 can be made even shorter respectively. Therefore, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be further reduced.

[0285] (Modification examples common to each embodiment) The semiconductor device 1 of each of the above embodiments can be modified as follows, for example. · In each of the above embodiments, the positions of the drive pad 21 and the control pad 31 in the thickness direction Z can be arbitrarily changed. In one example, at least one of the drive pad 21 and the control pad 31 may be aligned with the semiconductor element 40 in the thickness direction Z. In another example, at least one of the drive pad 21 and the control pad 31 may be aligned with the substrate 10 in the thickness direction Z.

[0286] · In each of the above embodiments, the arrangement positions of the drive pad 21 and the control pad 31 in a plan view can be arbitrarily changed. In one example, at least one of the drive pad 21 and the control pad 31 may be displaced in the lateral direction Y with respect to the substrate 10. That is, at least one of the drive pad 21 and the control pad 31 may be arranged on the third sealing resin side surface 53 side or the fourth sealing resin side surface 54 side of the sealing resin 50 with respect to the substrate 10. Thereby, at least one of the drive pad 21 and the control pad 31 will be displaced in the lateral direction Y with respect to the semiconductor element 40.

[0287] · In each of the above embodiments, a plurality of flange portions 19 may be omitted from the substrate 10. · In each of the above embodiments, the plurality of drive wires 60 and the control wires 70 may be formed of different metals. In one example, the plurality of drive wires 60 are made of aluminum, and the control wires 70 are made of gold (Au).

[0288] · In each of the above embodiments, the wire diameters of the plurality of drive wires 60 and the wire diameter of the control wire 70 may be different from each other. In one example, the wire diameters of the plurality of drive wires 60 are larger than the wire diameter of the control wire 70.

[0289] · In each of the above embodiments, the wire diameters of the plurality of drive wires 60 are not limited to 125 μm to 250 μm and can be arbitrarily changed. In one example, the wire diameters of the plurality of drive wires 60 are 250 μm to 400 μm.

[0290] · In each of the above embodiments, the semiconductor element 40 is configured such that the main surface side drive electrode 41 and the control electrode 43 are exposed by one rectangular opening 45 in a plan view, but the number of the openings 45 is not limited thereto. For example, as shown in FIG. 34, on the surface 40a of the semiconductor element 40, a first opening 45A that exposes the main surface side drive electrode 41 and a second opening 45B that exposes the control electrode 43 may be formed. The shape of the first opening 45A in a plan view is a rectangular shape in which the lateral direction Y is the long side direction and the longitudinal direction X is the short side direction. The shape of the second opening 45B in a plan view is a rectangular shape in which the longitudinal direction X is the long side direction and the lateral direction Y is the short side direction. The first opening 45A is provided so as to be closer to the first side surface 40c of the semiconductor element 40 in the longitudinal direction X. The first opening 45A opens most of the surface 40a of the semiconductor element 40 in the lateral direction Y. The second opening 45B is provided at an end on the second side surface 40d side and an end on the third side surface 40e side of the semiconductor element 40.

[0291] The main surface side drive electrode 41 has an exposed region 46 exposed by the first opening 45A. The exposed region 46 has a first exposed end 46a and a second exposed end 46b that are both ends in the lateral direction Y. The first exposed end 46a is an end on the third side surface 40e side of the semiconductor element 40 in the exposed region 46. The second exposed end 46b is an end on the fourth side surface 40f side of the semiconductor element 40 in the exposed region 46.

[0292] The first drive wire 61 and the second drive wire 62 are connected to the exposed area 46 of the main surface side drive electrode 41 and the drive pad 21 of the drive lead 20. In FIG. 34, in a plan view, the first drive wire 61 and the second drive wire 62 are parallel to each other. Note that, in a plan view, the distance between the first drive wire 61 and the second drive wire 62 may gradually increase as going from the main surface side drive electrode 41 toward the drive pad 21, or may gradually decrease as going from the main surface side drive electrode 41 toward the drive pad 21.

[0293] In a plan view, the distance DW2 between the drive pad side end portion 61b and the drive pad side end portion 62b is equal to the distance DW1 between the drive electrode side end portion 61a and the drive electrode side end portion 62a. Here, if the deviation amount between the distance DW1 and the distance DW2 is within 5% of the distance DW2, for example, it can be said that the distance DW2 and the distance DW1 are equal to each other.

[0294] The drive electrode side end portion 61a of the first drive wire 61 is disposed closer to the first exposed end portion 46a than the central portion in the lateral direction Y of the exposed area 46. In FIG. 34, the drive electrode side end portion 61a is connected to the first exposed end portion 46a of the exposed area 46. In one example, the drive electrode side end portion 61a is disposed to be the limit position on the third side surface 40e side in the area where wire bonding can be performed as the first exposed end portion 46a of the exposed area 46.

[0295] The drive pad side end portion 61b of the first drive wire 61 is connected closer to the first end portion 21a than the central portion in the lateral direction Y of the drive pad 21. In FIG. 34, the drive pad side end portion 61b is connected to the first end portion 21a of the drive pad 21. In one example, the drive pad side end portion 61b is disposed to be the limit position on the third sealing resin side surface 53 side in the area where wire bonding can be performed as the first end portion 21a of the drive pad 21. The drive pad side end portion 61b is connected to the portion on the semiconductor element 40 side rather than the central portion in the longitudinal direction X of the drive pad 21 in the longitudinal direction X. The drive pad side end portion 61b is disposed closer to the fourth sealing resin side surface 54 than the drive electrode side end portion 61a.

[0296] The drive electrode side end portion 62a of the second drive wire 62 is disposed closer to the second exposed end portion 46b than the center of the exposed region 46 in the lateral direction Y. In FIG. 34, the drive electrode side end portion 62a is connected to the second exposed end portion 46b of the exposed region 46. In one example, the drive electrode side end portion 62a is disposed so as to be at the limit position on the fourth side surface 40f side of the region where wire bonding can be performed as the second exposed end portion 46b of the exposed region 46. In the longitudinal direction X, the drive electrode side end portion 62a is arranged in the lateral direction Y in a state aligned with the drive electrode side end portion 61a of the first drive wire 61. Here, the state where the drive electrode side end portion 62a and the drive electrode side end portion 61a are aligned in the longitudinal direction X means that both drive electrode side end portions 61a, 62a in the longitudinal direction X overlap each other, and includes the case where a part overlaps according to the manufacturing error caused by wire bonding. In other words, if the amount of deviation in the longitudinal direction X at the drive electrode side end portions 61a, 62a is within the variation range for performing wire bonding, it can be said that the drive electrode side end portions 61a, 62a are aligned in the longitudinal direction X.

[0297] The drive pad side end 62b of the second drive wire 62 is connected to the second end 21b side rather than the central portion in the lateral direction Y of the drive pad 21. In FIG. 34, the drive pad side end 62b is connected to the second end 21b of the drive pad 21. In one example, the drive pad side end 62b is arranged to be at the limit position on the side of the fourth encapsulation resin side surface 54 in the region where wire bonding can be performed as the second end 21b of the drive pad 21. The drive pad side end 62b is connected to the portion on the semiconductor element 40 side rather than the central portion in the longitudinal direction X of the drive pad 21 in the longitudinal direction X. The drive pad side end 62b is arranged to be on the side of the fourth encapsulation resin side surface 54 rather than the drive electrode side end 62a. Also, in FIG. 34, the drive pad side end 62b is arranged in the lateral direction Y in a state aligned with the drive pad side end 61b in the longitudinal direction X. Here, the state where the drive pad side end 62b and the drive pad side end 61b are aligned in the longitudinal direction X includes that both drive pad side ends 61b and 62b in the longitudinal direction X overlap each other and that a part overlaps according to the manufacturing error due to wire bonding. In other words, if the deviation amount in the longitudinal direction X at the drive pad side ends 61b and 62b is within the variation range in performing wire bonding, it can be said that the drive pad side ends 61b and 62b are aligned in the longitudinal direction X.

[0298] According to this configuration, since the distance DW1 between the drive electrode side end 61a of the first drive wire 61 and the drive electrode side end 62a of the second drive wire 62 can be made large, the inductance between the main surface side drive electrode 41 and the drive pad 21 can be reduced.

[0299] · In the semiconductor device 1 of the modified example of FIG. 34, the positional relationship between the first opening 45A and the second opening 45B in the vertical direction X may be reversed. That is, the first opening 45A may be formed closer to the second side surface 40d of the semiconductor element 40 than the second opening 45B. According to this configuration, the distance between the first opening 45A and the drive pad 21 is reduced, so that the first drive wire 61 and the second drive wire 62 can be shortened respectively. Therefore, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be further reduced.

[0300] (Appendix) Next, the technical ideas based on the above-described embodiments and modified examples will be described below. (Appendix 1) A semiconductor device comprising: a substrate having a main surface; a semiconductor element including SiC, mounted on the main surface, having a surface facing the same direction as the main surface, and having a drive electrode formed on the surface; a drive pad; and a plurality of drive wires connecting the drive electrode and the drive pad in a spaced-apart state, wherein the first drive wire and the second drive wire that constitute the most spaced-apart combination among the plurality of drive wires are connected to the drive electrode and the drive pad such that, when viewed from a first direction that is perpendicular to the main surface, the drive pad side is closer than the drive electrode side.

[0301] (Appendix 2) The semiconductor device according to Appendix 1, wherein a direction perpendicular to the first direction is defined as a second direction, a direction perpendicular to the first direction and the second direction is defined as a third direction, the semiconductor element and the drive pad are displaced at least in the second direction, the plurality of drive wires are arranged spaced apart in the third direction, and the first drive wire and the second drive wire are drive wires at both ends in the third direction among the plurality of drive wires.

[0302] (Supplementary Note 3) The semiconductor device has an insulating film formed on the drive electrode and an opening formed in a part of the insulating film so as to expose the drive electrode. The opening is formed in a rectangular shape with the second direction as the short side direction and the third direction as the long side direction when viewed from the first direction. The size of the opening in the third direction is larger than the size of the drive pad in the third direction. The semiconductor device according to Supplementary Note 1 or 2.

[0303] (Supplementary Note 4) The semiconductor device has an insulating film formed on the drive electrode and an opening formed in a part of the insulating film so as to expose the drive electrode. The opening is formed in a rectangular shape with the second direction as the short side direction and the third direction as the long side direction when viewed from the first direction. The drive electrode has an exposed region exposed by the opening. The exposed region has a first exposed end portion and a second exposed end portion which are both end portions in the third direction. The first drive wire is connected to a side of the first exposed end portion rather than the central portion in the third direction of the exposed region. The second drive wire is connected to a side of the second exposed end portion rather than the central portion in the third direction of the exposed region. The semiconductor device according to any one of Supplementary Notes 1 to 4.

[0304] (Supplementary Note 5) The first drive wire and the second drive wire each have a drive electrode side end portion connected to the drive electrode and a drive pad side end portion connected to the drive pad. The drive pad has a first end portion and a second end portion which are both end portions in the third direction. The drive pad side end portion of the first drive wire is connected to a side of the first end portion rather than the central portion in the third direction of the drive pad. The drive pad side end portion of the second drive wire is connected to a side of the second end portion rather than the central portion in the third direction of the drive pad. The semiconductor device according to any one of Supplementary Notes 2 to 4.

[0305] (Supplementary Note 6) The drive pad side end portion of the first drive wire is connected to the first end portion. The drive pad side end portion of the second drive wire is connected to the second end portion. The semiconductor device according to Supplementary Note 5.

[0306] (Supplementary Note 7) A semiconductor device includes a substrate having a main surface, a semiconductor element mounted on the main surface and having a surface facing the same direction as the main surface, drive electrodes formed on the surface, drive pads, and a plurality of drive wires connecting the drive electrodes and the drive pads while being spaced apart from each other. The plurality of drive wires include a first drive wire and a second drive wire that form the most spaced combination among the plurality of drive wires. The first drive wire and the second drive wire each have a drive electrode side end connected to the drive electrode and a drive pad side end connected to the drive pad. Taking the direction perpendicular to the main surface as the first direction, the direction orthogonal to the first direction as the second direction, and the direction orthogonal to the first and second directions as the third direction, the semiconductor element and the drive pad are displaced at least in the second direction. The first drive wire and the second drive wire are arranged spaced apart in the third direction. The drive pad has a first end and a second end that are both ends in the third direction. The drive pad side end of the first drive wire is connected to the first end side of the center portion of the drive pad in the third direction, and the drive pad side end of the second drive wire is connected to the second end side of the center portion of the drive pad in the third direction.

[0307] (Supplementary Note 8) In the semiconductor device according to Supplementary Note 7, the drive pad side end of the first drive wire is connected to the first end, and the drive pad side end of the second drive wire is connected to the second end.

[0308] (Supplementary Note 9) The semiconductor device according to Supplementary Note 7 or 8 includes an insulating film formed on the drive electrode and an opening formed in a part of the insulating film to expose the drive electrode. The opening is formed in a rectangular shape with the second direction as the short side direction and the third direction as the long side direction when viewed from the first direction. The size of the drive pad in the third direction is larger than the size of the opening in the third direction.

[0309] (Supplementary Note 10) The semiconductor device according to Supplementary Note 9, wherein the size of the drive pad in the third direction is larger than the size of the semiconductor element in the third direction. (Supplementary Note 11) The semiconductor device according to Supplementary Note 7 or 8, wherein the size of the drive pad in the third direction is larger than 1 / 2 of the size of the substrate in the third direction.

[0310] (Supplementary Note 12) The drive pad includes a first drive pad and a second drive pad. The drive pad side end of the first drive wire is connected to the first drive pad, and the drive pad side end of the second drive wire is connected to the second drive pad. In the third direction, the first drive pad and the second drive pad are arranged spaced apart from each other. The semiconductor device according to Supplementary Note 7 or 8.

[0311] (Fifth Embodiment) With reference to FIGS. 35 to 45, a fifth embodiment of the semiconductor device will be described. As shown in FIG. 35, the semiconductor device 1 includes a substrate 10, a drive lead 20, a control lead 30, a semiconductor element 40 mounted on the main surface 10a of the substrate 10, and a sealing resin 50 that seals the semiconductor element 40. In the present embodiment, the substrate 10, the drive lead 20, and the control lead 30 are formed by pressing the same metal base material. The drive lead 20 has an outer lead 20A protruding from the first side surface of the sealing resin 50 and an inner lead 20B provided in the sealing resin 50 and electrically connected to the outer lead 20A. In the present embodiment, the outer lead 20A and the inner lead 20B are an integrated single component. The control lead 30 has an outer lead 30A protruding from the first side surface of the sealing resin 50 and an inner lead 30B provided in the sealing resin 50 and electrically connected to the outer lead 30A. In the present embodiment, the outer lead 30A and the inner lead 30B are an integrated single component. The lateral dimension LY of the semiconductor device 1 is preferably 10 mm or less. The semiconductor device 1 of the present embodiment is a package with a package outline standard (JEITA standard) of TO (Transistor Outline)-252. Specifically, the vertical dimension LX of the semiconductor device 1 is 9.5 mm to 10.50 mm, the lateral dimension LY is 6.4 mm to 6.8 mm, and the thickness dimension LZ is 2.1 mm to 2.3 mm. The lateral dimension LY and the thickness dimension LZ correspond to the lateral dimension LRY and the thickness dimension LRZ of the sealing resin 50. The vertical dimension LRX of the sealing resin 50 is 6.0 mm to 6.4 mm. Further, the semiconductor device 1 is of a so-called SIP (Single Inline Package) type in which the outer lead 20A of the drive lead 20 and the outer lead 30A of the control lead 30 extend from one surface of the sealing resin 50, respectively.

[0312] As shown in FIG. 35, the shape of the encapsulating resin 50 is a substantially rectangular parallelepiped. The encapsulating resin 50 is a synthetic resin having electrical insulation properties. In one example, the encapsulating resin 50 is an epoxy resin. The encapsulating resin 50 has six surfaces: a first encapsulating resin side surface 51, a second encapsulating resin side surface 52, a third encapsulating resin side surface 53, a fourth encapsulating resin side surface 54, an encapsulating resin bottom surface 55, and an encapsulating resin top surface 56. A drive terminal 22 (to be described later) of the drive lead 20 and a control terminal 32 (to be described later) of the control lead 30 each protrude from the second encapsulating resin side surface 52. In the present embodiment, the second encapsulating resin side surface 52 is an example of the first side surface of the encapsulating resin. The first encapsulating resin side surface 51 and the second encapsulating resin side surface 52 face opposite sides with a space therebetween. In the present embodiment, the first encapsulating resin side surface 51 is an example of the second side surface of the encapsulating resin. The third encapsulating resin side surface 53 and the fourth encapsulating resin side surface 54 face opposite sides with a space therebetween. The encapsulating resin bottom surface 55 and the encapsulating resin top surface 56 face opposite sides with a space therebetween. The encapsulating resin top surface 56 faces the same direction as the main surface 10a of the substrate 10. The encapsulating resin bottom surface 55 faces the same direction as the back surface 10b (see FIG. 37) of the substrate 10. In the following description, the direction in which the encapsulating resin bottom surface 55 and the encapsulating resin top surface 56 are arranged is defined as the thickness direction Z, the direction in which the first encapsulating resin side surface 51 and the second encapsulating resin side surface 52 are arranged is defined as the longitudinal direction X, and the direction in which the third encapsulating resin side surface 53 and the fourth encapsulating resin side surface 54 are arranged is defined as the lateral direction Y. The longitudinal direction X and the lateral direction Y are directions orthogonal to the thickness direction Z. The longitudinal direction X is a direction orthogonal to the lateral direction Y. Here, the thickness direction Z corresponds to the first direction, the longitudinal direction X corresponds to the second direction, and the lateral direction Y corresponds to the third direction.

[0313] The encapsulation resin 50 is formed by mold molding. Each of the side surfaces 51 to 54 of the encapsulation resin 50 is provided with an inclined surface that is inclined with respect to the thickness direction Z in order to provide a draft angle that facilitates mold extraction during the molding of the encapsulation resin 50. Specifically, each of the side surfaces 51 to 54 has a first inclined surface provided with a draft angle that facilitates extraction of the upper mold of the mold and a second inclined surface provided with a draft angle that facilitates extraction of the lower mold of the mold. The upper mold of the mold forms the top surface 56 of the encapsulation resin and the portion of each of the side surfaces 51 to 54 on the side of the top surface 56 of the encapsulation resin. The lower mold forms the back surface 55 of the encapsulation resin and the portion of each of the side surfaces 51 to 54 on the side of the back surface 55 of the encapsulation resin. In one example, as shown in FIGS. 38 and 39, the first encapsulation resin side surface 51 has a first inclined surface 51a and a second inclined surface 51b. The first inclined surface 51a is inclined toward the second encapsulation resin side surface 52 as it approaches the top surface 56 of the encapsulation resin. The second inclined surface 51b is inclined toward the second encapsulation resin side surface 52 as it approaches the back surface 55 of the encapsulation resin. The length of the first inclined surface 51a is longer than the length of the second inclined surface 51b. The second encapsulation resin side surface 52 has a first inclined surface 52a and a second inclined surface 52b. The first inclined surface 52a is inclined toward the first encapsulation resin side surface 51 as it approaches the top surface 56 of the encapsulation resin. The second inclined surface 52b is inclined toward the first encapsulation resin side surface 51 as it approaches the back surface 55 of the encapsulation resin. The length of the first inclined surface 52a is longer than the length of the second inclined surface 52b. The second inclined surface 52b is formed over a range closer to the top surface 56 of the encapsulation resin than the substrate 10. The third encapsulation resin side surface 53 has a first inclined surface 53a and a second inclined surface 53b. The first inclined surface 53a is inclined toward the fourth encapsulation resin side surface 54 as it approaches the top surface 56 of the encapsulation resin. The second inclined surface 53b is inclined toward the fourth encapsulation resin side surface 54 as it approaches the back surface 55 of the encapsulation resin. The length of the first inclined surface 53a is longer than the length of the second inclined surface 53b. The fourth encapsulation resin side surface 54 has a first inclined surface 54a and a second inclined surface 54b. The first inclined surface 54a is inclined toward the third encapsulation resin side surface 53 as it approaches the top surface 56 of the encapsulation resin. The second inclined surface 54b is inclined toward the third encapsulation resin side surface 53 as it approaches the back surface 55 of the encapsulation resin.

[0314] Incidentally, the lengths of the first inclined surface 51a and the second inclined surface 51b can each be arbitrarily changed. Also, the lengths of the first inclined surface 52a and the second inclined surface 52b can each be arbitrarily changed. Also, the lengths of the first inclined surface 53a and the second inclined surface 53b can each be arbitrarily changed. Also, the lengths of the first inclined surface 54a and the second inclined surface 54b can each be arbitrarily changed.

[0315] FIG. 36 is a view of the semiconductor device 1 as seen from the top surface 56 of the encapsulating resin in the thickness direction Z. In FIG. 36, for convenience, the encapsulating resin 50 is shown by a two-dot chain line, and the components within the encapsulating resin 50 are shown by solid lines.

[0316] As shown in FIG. 36, when the semiconductor device 1 is viewed from the top surface 56 of the encapsulating resin in the thickness direction Z (hereinafter referred to as "plan view"), the shape of the encapsulating resin 50 is a substantially rectangular shape in which the longitudinal direction X is the long side direction and the lateral direction Y is the short side direction. The first encapsulating resin side surface 51 and the second encapsulating resin side surface 52 are side surfaces along the lateral direction Y, and the third encapsulating resin side surface 53 and the fourth encapsulating resin side surface 54 are side surfaces along the longitudinal direction X.

[0317] The substrate 10 has a main surface 10a and a back surface 10b (see FIG. 37) facing opposite sides in the thickness direction Z. The main surface 10a faces the same direction as the top surface 56 of the encapsulating resin, and the back surface 10b faces the same direction as the back surface 55 of the encapsulating resin (see FIG. 37). The substrate 10 is formed of, for example, aluminum (Al) or copper (Cu).

[0318] The substrate 10 can be divided into an inner main body portion 111 covered by the encapsulating resin 50 and a protruding portion 112 protruding from the encapsulating resin 50. The inner main body portion 111 and the protruding portion 112 are adjacent to each other in the longitudinal direction X. The protruding portion 112 protrudes in the longitudinal direction X from the first encapsulating resin side surface 51. In the present embodiment, the size of the protruding portion 112 in the lateral direction Y is smaller than the size of the inner main body portion 111 in the lateral direction Y. Incidentally, the size of the protruding portion 112 in the lateral direction Y can be arbitrarily changed. In one example, the size of the protruding portion 112 in the lateral direction Y may be equal to the size of the inner main body portion 111 in the lateral direction Y.

[0319] In a plan view, the inner main body 111 is arranged such that the center in the longitudinal direction X thereof is closer to the first encapsulation resin side surface 51 than the center in the longitudinal direction X of the encapsulation resin 50. The inner main body 111 has a main surface 111a, a back surface 111b (see FIG. 37), a first side surface 111c, a second side surface 111d, and a third side surface 111e. The main surface 111a and the back surface 111b face opposite sides in the thickness direction Z. The main surface 111a constitutes the main surface 10a of the substrate 10, and the back surface 111b constitutes the back surface 10b of the substrate 10. For this reason, the main surface 111a faces the encapsulation resin top surface 56 side, and the back surface 111b faces the encapsulation resin back surface 55 side. The first side surface 111c faces the second encapsulation resin side surface 52, the second side surface 111d faces the third encapsulation resin side surface 53, and the third side surface 111e faces the fourth encapsulation resin side surface 54. The first side surface 111c extends along the lateral direction Y. The second side surface 111d and the third side surface 111e face each other with a space therebetween in the lateral direction Y. The second side surface 111d and the third side surface 111e extend along the longitudinal direction X.

[0320] At the end of the inner main body 111 on the side of the protruding portion 112, a narrow portion 113 is formed. The narrow portion 113 is formed by a curved concave portion 113a that is recessed from the second side surface 111d toward the fourth encapsulation resin side surface 54 side in the lateral direction Y, and a curved concave portion 113b that is recessed from the third side surface 111e toward the third encapsulation resin side surface 53 side in the lateral direction Y. The size of the narrow portion 113 in the lateral direction Y is smaller than the size of the portion of the inner main body 111 other than the narrow portion 113 in the lateral direction Y. Also, the size of the narrow portion 113 in the lateral direction Y is smaller than the size of the protruding portion 112 in the lateral direction Y. The narrow portion 113 is provided so as to be adjacent to the first encapsulation resin side surface 51 of the encapsulation resin 50 in the longitudinal direction X. In the narrow portion 113, a through hole 114 that penetrates the narrow portion 113 in the thickness direction Z is provided. The shape of the through hole 114 in a plan view is a substantially oval with the lateral direction Y as the longitudinal direction.

[0321] As shown in FIG. 37, a part of the back surface 111b of the inner main body portion 111 is exposed from the back surface 55 of the sealing resin. The exposed surface 111x, which is the surface of the back surface 111b of the inner main body portion 111 that is exposed from the back surface 55 of the sealing resin, is a portion of the back surface 111b of the inner main body portion 111 on the side of the first sealing resin side surface 51. The edge 111xe on the side of the second sealing resin side surface 52 of the exposed surface 111x is formed so as to be on the side of the first sealing resin side surface 51 rather than the central portion in the longitudinal direction X of the sealing resin 50. In the present embodiment, the edge 111xe of the exposed surface 111x extends along the lateral direction Y. The exposed surface 111x is flush with the back surface 55 of the sealing resin. The portion of the back surface 111b of the inner main body portion 111 other than the exposed surface 111x constitutes a non-exposed surface 111y that is not exposed from the back surface 55 of the sealing resin.

[0322] As shown in FIG. 36, in a plan view, on the side of the second sealing resin side surface 52 of the sealing resin 50 with respect to the substrate 10, the drive lead 20 and the control lead 30 are arranged in a state of being separated from the substrate 10 in the longitudinal direction X. The drive lead 20 and the control lead 30 are arranged in a state of being separated from each other in the lateral direction Y.

[0323] The drive lead 20 has a drive pad 21, a drive terminal 22, and a connecting portion 23 that connects the drive pad 21 and the drive terminal 22. The drive pad 21 and the connecting portion 23 constitute an inner lead 20B, and the drive terminal 22 constitutes an outer lead 20A. The drive pad 21 and the connecting portion 23 are arranged between the substrate 10 and the second sealing resin side surface 52 in the longitudinal direction X. More specifically, the drive pad 21 and the connecting portion 23 are arranged so as to be on the side of the second sealing resin side surface 52 rather than the central portion in the longitudinal direction X of the sealing resin 50 in the longitudinal direction X. The drive pad 21 is arranged such that the central portion in its lateral direction Y is on the side of the fourth sealing resin side surface 54 rather than the central portion in the lateral direction Y of the sealing resin 50. The connecting portion 23 is arranged on the side of the fourth sealing resin side surface 54 rather than the central portion in the lateral direction Y of the sealing resin 50 in the lateral direction Y.

[0324] In a plan view, the shape of the drive pad 21 is a substantially rectangular shape in which the lateral direction Y is the long side direction and the longitudinal direction X is the short side direction. The size of the drive pad 21 in the lateral direction Y is larger than the size of the semiconductor element 40 in the lateral direction Y. In the present embodiment, the size of the drive pad 21 in the lateral direction Y is larger than 1 / 2 of the size of the inner main body portion 111 in the lateral direction Y.

[0325] The drive pad 21 has a first end portion 21a and a second end portion 21b as end portions in the lateral direction Y. The first end portion 21a is an end portion on the side of the third sealing resin side surface 53 of the drive pad 21. In the present embodiment, the first end portion 21a is arranged so as to be on the side of the third sealing resin side surface 53 rather than the central portion of the inner main body portion 111 in the lateral direction Y. The second end portion 21b is an end portion on the side of the fourth sealing resin side surface 54 of the drive pad 21. The second end portion 21b is located on the side of the fourth sealing resin side surface 54 rather than the third side surface 111e of the inner main body portion 111. As shown in FIG. 38, the drive pad 21 is located on the side of the sealing resin top surface 56 rather than the main surface 111a of the inner main body portion 111 in the thickness direction Z. Further, the drive pad 21 is located on the side of the sealing resin top surface 56 rather than the surface 40a of the semiconductor element 40 in the thickness direction Z.

[0326] As shown in FIG. 36, the connecting portion 23 is continuous from the end portion on the side of the second sealing resin side surface 52 of the drive pad 21. The connecting portion 23 is located on the side of the fourth sealing resin side surface 54 rather than the central portion of the drive pad 21 in the lateral direction Y. The drive terminal 22 constitutes a source terminal. As shown in FIG. 38, the drive terminal 22 protrudes from the first inclined surface 52a of the second sealing resin side surface 52. That is, the drive terminal 22 has a terminal base end portion 22x which is an end portion on the side of the second sealing resin side surface 52 of the drive terminal 22. The terminal base end portion 22x protrudes from the first inclined surface 52a. In the thickness direction Z, the terminal base end portion 22x is provided so as to be aligned with the drive pad 21 and the connecting portion 23.

[0327] As shown in FIG. 36, the control lead 30 has a control pad 31, a control terminal 32, and a connecting portion 33 that connects the control pad 31 and the control terminal 32. The control pad 31 and the connecting portion 33 constitute an inner lead 30B, and the control terminal 32 constitutes an outer lead 30A. The control pad 31 and the connecting portion 33 are disposed between the substrate 10 and the side surface 52 of the second encapsulation resin in the longitudinal direction X. The control pad 31 and the connecting portion 33 are disposed closer to the side surface 53 of the third encapsulation resin than the center of the encapsulation resin 50 in the lateral direction Y.

[0328] In a plan view, the shape of the control pad 31 is a substantially rectangular shape in which the lateral direction Y is the long side direction and the longitudinal direction X is the short side direction. The size of the control pad 31 in the lateral direction Y is smaller than the size of the drive pad 21 in the lateral direction Y. Therefore, the size of the drive pad 21 in the lateral direction Y can be increased. As shown in FIG. 35, the control pad 31 is located closer to the top surface 56 of the encapsulation resin than the main surface 111a of the inner main body portion 111 in the thickness direction Z. Also, the control pad 31 is located closer to the top surface 56 of the encapsulation resin than the surface 40a of the semiconductor element 40 in the thickness direction Z.

[0329] As shown in FIG. 36, the connecting portion 33 is continuous from the end portion of the control pad 31 on the side of the second encapsulation resin side surface 52. The connecting portion 33 is located closer to the side surface 53 of the third encapsulation resin among the control pads 31 in the lateral direction Y. The control terminal 32 constitutes a gate terminal. As shown in FIG. 35, the control terminal 32 protrudes from the first inclined surface 52a of the second encapsulation resin side surface 52.

[0330] As shown in FIGS. 38 and 39, the semiconductor element 40 is mounted on the main surface 111a of the inner main body 111 by solder SD. As shown in FIG. 36, the semiconductor element 40 is disposed in a portion of the inner main body 111 near the first sealing resin side surface 51. Specifically, in a plan view, a first distance D1 between the semiconductor element 40 and the first side surface 111c of the inner main body 111 is larger than a second distance D2 between the semiconductor element 40 and the narrow-width portion 113 of the inner main body 111. In one example, the semiconductor element 40 is disposed in a portion of the inner main body 111 adjacent to the narrow-width portion 113 in the longitudinal direction X. In the present embodiment, the semiconductor element 40 is disposed in a portion of the inner main body 111 adjacent to the narrow-width portion 113 in the longitudinal direction X.

[0331] The semiconductor element 40 is disposed at the center in the lateral direction Y of the inner main body 111. Specifically, a third distance D3 between the semiconductor element 40 and the second side surface 111d of the inner main body 111 is equal to a fourth distance D4 between the semiconductor element 40 and the third side surface 111e of the inner main body 111. Here, if the deviation amount between the third distance D3 and the fourth distance D4 is within 5% of the third distance D3, it can be said that the third distance D3 and the fourth distance D4 are equal to each other. In the present embodiment, the first distance D1 is larger than the third distance D3 and the fourth distance D4. The second distance D2 is smaller than the third distance D3 and the fourth distance D4.

[0332] The semiconductor element 40 contains silicon carbide (SiC). In the present embodiment, a SiCMOSFET (metal-oxide-semiconductor field-effect transistor) is used as the semiconductor element 40. The semiconductor element 40 (SiCMOSFT) is an element capable of high-speed switching in response to a drive signal having a frequency of 1 kHz or more and several hundreds kHz or less. Preferably, the semiconductor element 40 is an element capable of high-speed switching in response to a drive signal having a frequency of 1 kHz or more and 100 kHz or less. In the present embodiment, the semiconductor element 40 performs high-speed switching in response to a drive signal having a frequency of 100 kHz.

[0333] The semiconductor element 40 is formed in a flat plate shape. Specifically, in a plan view, the shape of the semiconductor element 40 is a rectangular shape in which the lateral direction Y is the long side direction and the longitudinal direction X is the short side direction. In the present embodiment, the size of the semiconductor element 40 in the lateral direction Y is 3 mm. Here, the size of the semiconductor element 40 in the lateral direction Y includes an error of 5% of 3 mm (±0.15 mm).

[0334] As shown in FIGS. 36, 38, and 39, the semiconductor element 40 has a front surface 40a, a back surface 40b, a first side surface 40c, a second side surface 40d, a third side surface 40e, and a fourth side surface 40f. The front surface 40a and the back surface 40b face opposite directions in the thickness direction Z. The front surface 40a faces the top surface 56 of the encapsulating resin. That is, the front surface 40a faces the same direction as the main surface 10a of the substrate 10. The back surface 40b faces the back surface 55 of the encapsulating resin. The back surface 40b faces the main surface 111a of the inner main body portion 111. The first side surface 40c faces the first encapsulating resin side surface 51, the second side surface 40d faces the second encapsulating resin side surface 52, the third side surface 40e faces the third encapsulating resin side surface 53, and the fourth side surface 40f faces the fourth encapsulating resin side surface 54.

[0335] A main surface side drive electrode 41 and a control electrode 43 are formed on the front surface 40a. A back surface side drive electrode 42 is formed on the back surface 40b. In the present embodiment, the main surface side drive electrode 41 constitutes a source electrode, and the back surface side drive electrode 42 constitutes a drain electrode. The control electrode 43 constitutes a gate electrode. The back surface side drive electrode 42 is electrically connected to the inner main body portion 111 by solder SD.

[0336] The main surface side drive electrode 41 is formed over most of the front surface 40a. In a plan view, the shape of the main surface side drive electrode 41 is a substantially rectangular shape with the longitudinal direction X as the short side direction and the lateral direction Y as the long side direction. The main surface side drive electrode 41 has a recess 41a that opens toward the third encapsulating resin side surface 53. The recess 41a is formed at the end of the main surface side drive electrode 41 on the third encapsulating resin side surface 53 side and at the central portion in the longitudinal direction X. The control electrode 43 is formed in the recess 41a.

[0337] The semiconductor element 40 has a passivation film 44 which is an insulating film formed on the main surface side drive electrode 41 and the control electrode 43. An opening 45 is formed in the passivation film 44 to expose a part of the main surface side drive electrode 41 and a part of the control electrode 43.

[0338] In a plan view, the shape of the opening 45 is a rectangular shape in which the lateral direction Y is the long side direction and the longitudinal direction X is the short side direction. The size of the opening 45 in the lateral direction Y is smaller than the size of the drive pad 21 in the lateral direction Y. In other words, the size of the drive pad 21 in the lateral direction Y is larger than the size of the opening 45 in the lateral direction Y.

[0339] The opening 45 is provided at the central portion of the semiconductor element 40 in the longitudinal direction X of the surface 40a. Specifically, a first distance DC1 between the opening 45 and the first side surface 40c of the semiconductor element 40, a second distance DC2 between the opening 45 and the second side surface 40d of the semiconductor element 40, a third distance DC3 between the opening 45 and the third side surface 40e of the semiconductor element 40, and a fourth distance DC4 between the opening 45 and the fourth side surface 40f of the semiconductor element 40 are equal to each other. Here, if the maximum deviation amount of the first distance DC1, the second distance DC2, the third distance DC3, and the fourth distance DC4 is within 5% of the first distance DC1, for example, it can be said that the first distance DC1, the second distance DC2, the third distance DC3, and the fourth distance DC4 are equal to each other.

[0340]

[0341] The main surface side drive electrode 41 has an exposed region 46 exposed by the opening 45. The exposed region 46 has a first exposed end portion 46a and a second exposed end portion 46b which are both end portions in the lateral direction Y. The first exposed end portion 46a is the end portion of the exposed region 46 on the side of the third side surface 40e of the semiconductor element 40. The second exposed end portion 46b is the end portion of the exposed region 46 on the side of the fourth side surface 40f of the semiconductor element 40.

[0341] The semiconductor device 1 includes a plurality of drive wires 60 and one control wire 70. In this embodiment, the plurality of drive wires 60 are composed of two drive wires, namely a first drive wire 61 and a second drive wire 62. That is, the first drive wire 61 and the second drive wire 62 form the most spaced-apart combination among the plurality of drive wires 60. The first drive wire 61 is arranged closer to the control wire 70 side than the second drive wire 62.

[0342] The first drive wire 61 and the second drive wire 62 are made of the same metal. In this embodiment, the first drive wire 61 and the second drive wire 62 contain aluminum. The wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62. Here, if the deviation amount between the wire diameter of the first drive wire 61 and the wire diameter of the second drive wire 62 is within 5% of the wire diameter of the first drive wire 61, it can be said that the wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62. In this embodiment, the wire diameters of the first drive wire 61 and the second drive wire 62 are equal to the wire diameter of the control wire 70. Here, if the deviation amount between the wire diameters of the first drive wire 61 and the second drive wire 62 and the wire diameter of the control wire 70 is within 5% of the wire diameter of the control wire 70, it can be said that the wire diameters of the first drive wire 61 and the second drive wire 62 are equal to the wire diameter of the control wire 70. An example of the respective wire diameters of the first drive wire 61, the second drive wire 62, and the control wire 70 is 125 μm to 250 μm. In this embodiment, the respective wire diameters of the first drive wire 61, the second drive wire 62, and the control wire 70 are 125 μm.

[0343] The first drive wire 61 and the second drive wire 62 each connect the main surface side drive electrode 41 of the semiconductor element 40 and the drive pad 21. The first drive wire 61 and the second drive wire 62 are each connected to the main surface side drive electrode 41 and the drive pad 21, for example, by wire bonding. In plan view, the first drive wire 61 and the second drive wire 62 are arranged spaced apart in the lateral direction Y. The first drive wire 61 and the second drive wire 62 are the drive wires at both ends in the lateral direction Y among the plurality of drive wires 60.

[0344] In a plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 such that they are farther from the main surface side drive electrode 41 side than the drive pad 21 side. In a plan view, the distance between the first drive wire 61 and the second drive wire 62 widens as it goes from the main surface side drive electrode 41 toward the drive pad 21 side. Hereinafter, the configuration of the first drive wire 61 and the second drive wire 62 will be described in detail.

[0345] As shown in FIG. 40, the first drive wire 61 has a drive electrode side end portion 61a and a drive pad side end portion 61b. The second drive wire 62 has a drive electrode side end portion 62a and a drive pad side end portion 62b. In a plan view, the distance DW2 between the drive pad side end portion 61b and the drive pad side end portion 62b is larger than the distance DW1 between the drive electrode side end portion 61a and the drive electrode side end portion 62a. In a plan view, the distance DW1 is the minimum value of the distance between the first drive wire 61 and the second drive wire 62, and the distance DW2 is the maximum value of the distance between the first drive wire 61 and the second drive wire 62.

[0346] The distance in the lateral direction Y between the auxiliary line LS1 along the longitudinal direction X from the drive electrode side end portion 61a and the auxiliary line LS2 along the longitudinal direction X from the drive pad side end portion 61b is defined as the distance DY1, and the distance in the lateral direction Y between the auxiliary line LS3 along the longitudinal direction X from the drive electrode side end portion 62a and the auxiliary line LS4 along the longitudinal direction X from the drive pad side end portion 62b is defined as the distance DY2. In this case, the distance DY2 is larger than the distance DY1.

[0347] The drive electrode side end portion 61a of the first drive wire 61 is connected to the first exposed end portion 46a side rather than the central portion in the lateral direction Y of the exposed region 46 of the main surface side drive electrode 41. In the present embodiment, the drive electrode side end portion 61a is connected to the first exposed end portion 46a. Specifically, the drive electrode side end portion 61a is connected to the portion adjacent to the control electrode 43 in the main surface side drive electrode 41 in the lateral direction Y, that is, the portion constituting the bottom of the recess 41a of the main surface side drive electrode 41.

[0348] The drive pad side end portion 61b of the first drive wire 61 is connected to the first end portion 21a side rather than the central portion in the lateral direction Y of the drive pad 21. In the present embodiment, the drive pad side end portion 61b is connected to the first end portion 21a of the drive pad 21. In one example, the drive pad side end portion 61b is arranged so as to be at the limit position on the side of the third encapsulation resin side surface 53 in the region where wire bonding can be performed as the first end portion 21a of the drive pad 21. Specifically, the position in the lateral direction Y of the drive pad side end portion 61b with respect to the first end portion 21a is set so that the capillary for supplying the first drive wire 61 in the wire bonding apparatus is located at the edge on the side of the third encapsulation resin side surface 53 of the first end portion 21a of the drive pad 21. The drive pad side end portion 61b is arranged in the longitudinal direction X at a portion closer to the semiconductor element 40 than the central portion of the drive pad 21 in the longitudinal direction X. The drive pad side end portion 61b is arranged so as to be on the side of the fourth encapsulation resin side surface 54 rather than the drive electrode side end portion 61a.

[0349] The drive electrode side end portion 62a of the second drive wire 62 is connected to the second exposed end portion 46b side rather than the central portion in the lateral direction Y of the exposed region 46 of the main surface side drive electrode 41. In the present embodiment, the drive electrode side end portion 62a is connected to the second exposed end portion 46b. In one example, the drive electrode side end portion 62a is arranged to be the limit position on the fourth side surface 40f side of the region where wire bonding can be performed as the end portion on the fourth side surface 40f side of the semiconductor element 40 in the opening 45 in the lateral direction Y. Specifically, the position in the lateral direction Y of the drive electrode side end portion 62a with respect to the second exposed end portion 46b of the exposed region 46 is set so that the capillary for supplying the second drive wire 62 in the wire bonding apparatus is located at the edge on the fourth side surface 40f side of the exposed region 46. In the longitudinal direction X, the drive electrode side end portion 62a is arranged in the lateral direction Y in a state aligned with the drive electrode side end portion 61a of the first drive wire 61. Here, the state where the drive electrode side end portion 62a and the drive electrode side end portion 61a are aligned means that both drive electrode side end portions 61a and 62a in the longitudinal direction X overlap each other, and includes the case where a part overlaps according to the manufacturing error caused by wire bonding. In other words, if the amount of deviation in the longitudinal direction X at both drive electrode side end portions 61a and 62a is within the variation range in performing wire bonding, it can be said that both drive electrode side end portions 61a and 62a are aligned in the longitudinal direction X.

[0350] The drive pad side end portion 62b of the second drive wire 62 is connected to the second end portion 21b side rather than the central portion in the lateral direction Y of the drive pad 21. In the present embodiment, the drive pad side end portion 62b is connected to the second end portion 21b of the drive pad 21. In one example, the drive pad side end portion 62b is arranged to be at the limit position on the side of the fourth encapsulation resin side surface 54 in the region where wire bonding can be performed as the second end portion 21b of the drive pad 21. Specifically, the position in the lateral direction Y of the drive pad side end portion 62b with respect to the second end portion 21b is set such that the capillary for supplying the second drive wire 62 in the wire bonding apparatus is located at the edge on the side of the fourth encapsulation resin side surface 54 of the second end portion 21b of the drive pad 21. The drive pad side end portion 62b is arranged in the longitudinal direction X at a portion closer to the semiconductor element 40 than the central portion in the longitudinal direction X of the drive pad 21. The drive pad side end portion 62b is arranged to be on the side of the fourth encapsulation resin side surface 54 rather than the drive electrode side end portion 62a. The drive pad side end portion 62b is arranged on the side of the fourth encapsulation resin side surface 54 rather than the semiconductor element 40 in the lateral direction Y. Further, in the present embodiment, the drive pad side end portion 62b is arranged in the lateral direction Y in a state aligned with the drive pad side end portion 61b in the longitudinal direction X. Here, the state where the drive pad side end portion 62b and the drive pad side end portion 61b are aligned in the longitudinal direction X means that both drive pad side end portions 61b and 62b in the longitudinal direction X overlap each other, including the case where a part overlaps according to the manufacturing error caused by wire bonding. In other words, if the amount of deviation in the longitudinal direction X at both drive pad side end portions 61b and 62b is within the variation range for performing wire bonding, it can be said that both drive pad side end portions 61b and 62b are aligned in the longitudinal direction X. <> <>

[0351] <> The control wire 70 connects the control electrode 43 of the semiconductor element 40 and the control pad 31. The control wire 70 is connected to the control electrode 43 and the control pad 31, for example, by wire bonding. The control wire 70 is made of the same material as the plurality of drive wires 60. The control wire 70 has a control electrode side end portion 71 and a control pad side end portion 72. The control electrode side end portion 71 is the end portion of the control wire 70 that is connected to the control electrode 43. The control pad side end portion 72 is the end portion of the control wire 70 that is connected to the control pad 31. The distance DW3 between the control electrode side end portion 71 of the control wire 70 and the drive electrode side end portion 61a of the first drive wire 61 is smaller than the distance DW1. The distance DY3 between the auxiliary line LS5 along the longitudinal direction X from the control electrode side end portion 71 and the auxiliary line LS6 along the longitudinal direction X from the control pad side end portion 72 is larger than the distance DY1 and smaller than the distance DY2. Note that the magnitude of the distance DY3 can be arbitrarily changed. In one example, the distance DY3 is equal to or less than the distance DY1.

[0352] Next, an extended structure of the creepage distance between the drain terminal (the back surface 10b of the substrate 10) and the source terminal (the drive terminal 22) in the semiconductor device 1 will be described. As shown in FIGS. 36 and 38, a recess 115a is provided in a portion on the side of the second encapsulation resin side surface 52 on the back surface 10b of the substrate 10 (the back surface 111b of the inner main body portion 111). The recess 115a is formed by being recessed in a stepped manner from the back surface 111b of the inner main body portion 111 toward the main surface 111a. The recess 115a is formed extending from the first side surface 111c of the inner main body portion 111 in the longitudinal direction X to a portion on the side of the second encapsulation resin side surface 52 rather than the central portion of the inner main body portion 111 in the longitudinal direction X. In the present embodiment, the recess 115a is formed such that the edge on the first encapsulation resin side surface 51 side thereof is aligned with the second side surface 40d of the semiconductor element 40 in the longitudinal direction X. In other words, the semiconductor element 40 is mounted on the main surface 111a of the inner main body portion 111 such that the edge on the first encapsulation resin side surface 51 side of the recess 115a and the second side surface 40d of the semiconductor element 40 are aligned in the longitudinal direction X. In the present embodiment, the edge on the first encapsulation resin side surface 51 side of the recess 115a coincides with the edge 111xe of the exposed surface 111x. Further, in the present embodiment, the recess 115a is formed over the entire lateral direction Y of the portion on the side of the second encapsulation resin side surface 52 on the back surface 111b of the inner main body portion 111.

[0353] The depth H1 of the recess 115a is 1 / 2 or less of the thickness of the substrate 10 (the thickness T of the inner main body portion 111). In the present embodiment, the depth H1 is 1 / 3 of the thickness T of the inner main body portion 111. Here, if the deviation amount between the depth H1 and 1 / 3 of the thickness T is within 5% of the depth H1, for example, it can be said that the depth H1 is 1 / 3 of the thickness T. In the present embodiment, the depth H1 is 0.9 mm. A part of the encapsulation resin 50 has entered the recess 115a.

[0354] As shown in FIG. 39, a recess 115b is provided at an end on the side of the third sealing resin side surface 53 in a portion on the side of the first sealing resin side surface 51 rather than the recess 115a on the back surface 111b of the inner main body portion 111. A recess 115c is provided at an end on the side of the fourth sealing resin side surface 54 in a portion on the side of the first sealing resin side surface 51 rather than the recess 115a on the back surface 111b of the inner main body portion 111. The recesses 115b and 115c are each formed by being recessed in a stepped manner from the back surface 111b of the inner main body portion 111 toward the main surface 111a. As shown in FIG. 36, the recess 115b is formed over a portion from the second side surface 111d of the inner main body portion 111 to the side of the third sealing resin side surface 53 rather than half of the third distance D3 in the lateral direction Y. The recess 115c is formed over a portion from the third side surface 111e of the inner main body portion 111 to the side of the fourth sealing resin side surface 54 rather than half of the fourth distance D4 in the lateral direction Y. Here, as described above, the third distance D3 is the distance between the semiconductor element 40 and the second side surface 111d of the inner main body portion 111, and the fourth distance D4 is the distance between the semiconductor element 40 and the third side surface 111e of the inner main body portion 111. Also, the recess 115b is connected to the end on the second side surface 111d side in the lateral direction Y of the recess 115a. The recess 115c is connected to the end on the third side surface 111e side in the lateral direction Y of the recess 115a.

[0355] The depth H2 of the recess 115b is equal to the depth H3 of the recess 115c. Here, if the deviation amount between the depth H2 and the depth H3 is within 5% of the depth H2, for example, it can be said that the depth H2 is equal to the depth H3. The depths H2 and H3 are less than or equal to half of the thickness T of the inner main body portion 111. In the present embodiment, the depths H2 and H3 are one-third of the thickness T. That is, the depths H2 and H3 are equal to the depth H1. In the present embodiment, the depths H2 and H3 are each 0.9 mm. A part of the sealing resin 50 has entered the recesses 115b and 115c.

[0356] As shown in FIGS. 36 and 38, recesses 115d are provided in part of the recesses 113a, 113b and the through hole 114 of the inner main body 111, respectively. The recesses 115d provided in the recesses 113a, 113b are formed along the recesses 113a, 113b. The recess 115d provided in the through hole 114 is provided at the center of the second sealing resin side surface 52 and in the lateral direction Y among the inner side surfaces constituting the through hole 114. The depth H4 of these recesses 115d is equal to the depths H2, H3 of the recesses 115b, 115c. Here, if the deviation amount between the depth H4 and the depth H2 and the deviation amount between the depth H4 and the depth H3 are within 5% of the depth H4, for example, it can be said that the depth H4 is equal to the depths H2, H3. A part of the sealing resin 50 has entered into these recesses 115d, respectively.

[0357] These recesses 115a, 115b, 115c, 115d are formed by pressing (punching) the substrate 10. Therefore, the recesses 115a, 115b, 115c, 115d are formed simultaneously in one step.

[0358] As shown in FIG. 36, the inner main body 111 includes a first thin portion 116a which is a portion between the recess 115a and the main surface 111a in the thickness direction Z, a second thin portion 116b which is a portion between the recess 115b and the main surface 111a in the thickness direction Z, a third thin portion 116c which is a portion between the recess 115c and the main surface 111a in the thickness direction Z, and a fourth thin portion 116d which is a portion between the recess 115d and the main surface 111a in the thickness direction Z. As shown in FIGS. 38 and 39, since the depths H1, H2, H3, H4 of the recesses 115a, 115b, 115c, 115d are equal to each other, the thickness T1 of the first thin portion 116a, the thickness T2 of the second thin portion 116b, the thickness T3 of the third thin portion 116c, and the thickness T4 of the fourth thin portion 116d are equal to each other. Here, if the maximum deviation amount among the thicknesses T1, T2, T3, T4 is within 5% of the thickness T1, for example, it can be said that the thicknesses T1, T2, T3, T4 are equal to each other.

[0359] The length L1 of the first thin portion 116a in the longitudinal direction X is longer than the length L2 of the second thin portion 116b in the lateral direction Y and the length L3 of the third thin portion 116c in the lateral direction Y. Also, the length L1 is longer than the length L4 of the fourth thin portion 116d. The length L1 is more than twice the lengths L2, L3, and L4. Preferably, the length L1 is more than three times the lengths L2, L3, and L4. In the present embodiment, the length L1 is about ten times the lengths L2, L3, and L4. Also, in the present embodiment, the lengths L2, L3, and L4 are equal to each other. Here, if the maximum deviation amount among the lengths L2, L3, and L4 is within 5% of the length L2, for example, it can be said that the lengths L2, L3, and L4 are equal to each other.

[0360] As shown in FIGS. 38 and 39, the non-exposed surface 111y of the back surface 111b of the inner main body portion 111 includes a first non-exposed surface 111ya facing the same side as the exposed surface 111x in the first thin portion 116a, a second non-exposed surface 111yb facing the same side as the exposed surface 111x in the second thin portion 116b, a third non-exposed surface 111yc facing the same side as the exposed surface 111x in the third thin portion 116c, and a fourth non-exposed surface 111yd facing the same side as the exposed surface 111x in the fourth thin portion 116d.

[0361] As shown in FIG. 37, the shortest distance from the second sealing resin side surface 52 in the longitudinal direction X to the back surface 10b of the substrate 10 (the exposed surface 111x of the inner main body portion 111) is defined as the dis...

Claims

1. A conductive metal plate having a front surface and a back surface spaced apart in a first direction which is the thickness direction, a device front surface facing in the same direction as the front surface, a device back surface facing the device front surface, a first electrode and a control electrode formed on the device front surface side, and a second electrode formed on the device back surface side, and a semiconductor device in which the device back surface is mounted on the front surface, a first lead, a second lead, and a third lead each having a wire connection portion disposed apart from the metal plate in a plan view in the first direction, a first wire and a second wire among a plurality of wires connecting the first electrode and the wire connection portion of the first lead, which are arranged to be most spaced apart in the plan view, a third wire connecting the control electrode and the wire connection portion of the second lead, a fourth wire connecting the first electrode and the wire connection portion of the third lead, an insulating film formed on the first electrode, an opening formed in a part of the insulating film so as to expose the first electrode, and comprising, the first wire and the second wire are connected such that the distance between the connection portions on the wire connection portion side of the first lead is greater than the distance between the connection portions on the first electrode side, assuming a direction orthogonal to the first direction as a second direction and a direction orthogonal to the first direction and the second direction as a third direction, the first lead, the second lead, and the third lead and the metal plate face each other in the second direction, the size of the wire connection portion of the first lead in the third direction is larger than the size of the opening in the third direction a semiconductor device.

2. The opening is formed in a rectangular shape having the second direction as the short side direction and the third direction as the long side direction in the plan view The semiconductor device according to Claim 1.

3. The semiconductor device contains SiC, the metal plate contains aluminum (Al) or copper (Cu) The semiconductor device according to Claim 1.

4. A conductive metal plate having a front surface and a back surface spaced apart in a first direction which is the thickness direction, a device front surface facing in the same direction as the front surface, a device back surface facing the device front surface, a first electrode and a control electrode formed on the device front surface side, and a second electrode formed on the device back surface side, and a semiconductor device in which the device back surface is mounted on the front surface, a first lead, a second lead, and a third lead each having a wire connection portion disposed apart from the metal plate in a plan view in the first direction, Of the plurality of wires connecting the first electrode and the wire connection portion of the first lead, a first wire and a second wire arranged to be most separated from each other in the plan view; A third wire connecting the control electrode and the wire connection portion of the second lead; A fourth wire connecting the first electrode and the wire connection portion of the third lead; A sealing resin for sealing at least a part of the semiconductor element, the first wire, the second wire, the third wire, the fourth wire, the metal plate, the first lead, the second lead, and the third lead; Comprising; The first wire and the second wire are connected such that the distance between the connection portions on the wire connection portion side of the first lead is greater than the distance between the connection portions on the first electrode side; The back surface of the metal plate includes an exposed surface from which the metal plate is exposed from the sealing resin; The first lead, the second lead, and the third lead each protrude from a first side surface of the sealing resin in a direction parallel to the main surface; A depression is formed on the back surface of the metal plate from a position overlapping the side surface on the first side surface side of the semiconductor element in the plan view to an end portion on the first side surface side of the metal plate; A part of the sealing resin enters the depression; The length of the depression from the exposed surface on the first side surface side of the back surface of the metal plate to the end portion on the first side surface side of the metal plate is longer than the length of the depression from the exposed surface on the other side surface side of the back surface of the metal plate to the end portion on the other side surface side of the metal plate; Semiconductor device.

5. The metal plate is electrically connected to the second electrode The semiconductor device according to claim 4.

6. When a direction orthogonal to the first direction is defined as the second direction and a direction orthogonal to the first direction and the second direction is defined as the third direction, The size of the wire connection portion of the first lead in the third direction is larger than the size of the semiconductor element in the third direction; The semiconductor device according to claim 1 or 4.

7. When a direction orthogonal to the first direction is defined as the second direction and a direction orthogonal to the first direction and the second direction is defined as the third direction, The first wire and the second wire each have a first electrode side end portion connected to the first electrode and a wire connection portion side end portion connected to the wire connection portion of the first lead, When viewed from the first direction, the first electrode side end portions of the first wire and the second wire are arranged in the third direction in a state where they are aligned in the second direction. The semiconductor device according to any one of claims 1 to 6.

8. When a direction orthogonal to the first direction is defined as the second direction, and a direction orthogonal to the first direction and the second direction is defined as the third direction, The first wire and the second wire each have a first electrode side end portion connected to the first electrode and a wire connection portion side end portion connected to the wire connection portion of the first lead. When viewed from the first direction, the first electrode side end portions of the first wire and the second wire are shifted in the second direction. The semiconductor device according to any one of claims 1 to 6.

9. The opening is formed in a rectangular shape having the second direction as the short side direction and the third direction as the long side direction when viewed from the first direction. The first electrode has an exposed area exposed by the opening. The exposed area has a first exposed end portion and a second exposed end portion which are both end portions in the third direction. The first wire is connected to the side of the first exposed end portion rather than the central portion in the third direction of the exposed area. The second wire is connected to the side of the second exposed end portion rather than the central portion in the third direction of the exposed area. The semiconductor device according to claim 1.

10. The semiconductor element and the wire connection portion of the first lead are shifted at least in the second direction. The plurality of wires connecting the first electrode and the wire connection portion of the first lead are arranged spaced apart in the third direction. The first wire and the second wire are the wires at both ends in the third direction among the plurality of wires. The semiconductor device according to claim 9.

11. The size of the wire connection portion of the first lead in the third direction is larger than the size of the opening in the third direction. The semiconductor device according to claim 9.

12. The first wire and the second wire each have a first electrode side end portion connected to the first electrode and a wire connection portion side end portion connected to the wire connection portion of the first lead. When viewed from the first direction, the first electrode side end portions of the first wire and the second wire are arranged in the third direction in a state where they are aligned in the second direction. The semiconductor device according to any one of claims 9 to 11.

13. The first wire and the second wire each have a first electrode side end connected to the first electrode and a wire connection part side end connected to the wire connection part of the first lead. The wire connection part of the first lead has a first end part and a second end part which are both end parts in the third direction. The wire connection part side end of the first wire is connected to the first end part side of the wire connection part of the first lead and is closer to the first end part than the central part of the wire connection part of the first lead in the third direction. The wire connection part side end of the second wire is connected to the second end part side of the wire connection part of the first lead and is closer to the second end part than the central part of the wire connection part of the first lead in the third direction. The semiconductor device according to any one of claims 9 to 11.

14. The wire connection part side end of the first wire is connected to the first end part. The wire connection part side end of the second wire is connected to the second end part. The semiconductor device according to claim 13.

15. When viewed from the first direction, the first electrode is rectangular with the second direction as the short side direction and the third direction as the long side direction. The semiconductor device according to any one of claims 9 to 11 or 14.

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