Substrate processing apparatus, control method for substrate processing apparatus, and control program for substrate processing apparatus

Abstract

To provide a substrate processing apparatus, a substrate processing apparatus control method, and a substrate processing apparatus control program capable of accurately determining a substrate storage state in a carrier.SOLUTION: A storage unit stores a threshold value (for example, symbol Da1) for each slot obtained when a reference substrate having the same specifications as the processing substrate is housed in a reference carrier having the same specifications as the working carrier. That is, the storage unit stores 25 thresholds Da1 to Da25 corresponding to 25 stages of slots. Then, the control unit compares the substrate thickness (for example, symbol TK1) of the processing substrate for each slot of the working carrier with a threshold for each slot (for example, symbol Da1) stored in the storage unit. Therefore, it not only corresponds to the specifications of the substrate and carrier, but is also compared with criteria that take into account the characteristics of each slot. Therefore, it is possible to accurately determine the storage state of the processing substrate for each slot of the work carrier.SELECTED DRAWING: Figure 7

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus for processing a substrate, a control method for this apparatus, and a control program. Examples of the substrate include a semiconductor substrate, a substrate for an FPD (Flat Panel Display), a glass substrate for a photomask, a substrate for an optical disk, a substrate for a magnetic disk, a ceramic substrate, a substrate for a solar cell, and the like. Examples of the FPD include a liquid crystal display device, an organic EL (electroluminescence) display device, and the like.

Background Art

[0002] The substrate processing apparatus includes a cassette stage and a substrate processing unit (see, for example, Patent Documents 1 and 2). The cassette stage is for delivering the substrate to the substrate processing unit. The cassette stage is provided with a table (mounting table) for mounting a cassette (carrier) and a mapping mechanism. The mapping mechanism includes a mapping arm and a sensor for detecting the substrate. Thereby, it is detected whether a substrate is stored in the cassette, the height position of the stored substrate, and whether two substrates are stacked.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, conventional substrate processing apparatuses have the following problems. That is, a conventional substrate processing apparatus stores, for example, one common reference height information for comparison. Then, the substrate processing apparatus acquires the height information of the processing substrates stored in the work carrier for each slot by driving a mapping mechanism. Then, the storage state of the processing substrates is determined by comparing the height information of the processing substrates acquired for each slot with the one common reference height information. Such a conventional substrate processing apparatus has a problem that it cannot accurately determine the storage state of the substrates.

[0005] The present invention has been made in view of such circumstances, and an object thereof is to provide a substrate processing apparatus, a control method for the substrate processing apparatus, and a control program for the substrate processing apparatus capable of accurately determining the substrate storage state in a carrier.

Means for Solving the Problems

[0006] In order to achieve such an object, the present inventor has intensively studied and as a result, found three factors that misjudge the storage state of the substrates. Specific explanations are given below.

[0007] (1) False determination due to differences in substrate specifications The size etc. of substrates (for example, wafers) are defined by SEMI (Semiconductor Equipment and Materials International) standards. However, when either the thickness or the material is out of the specifications, the substrate is deformed into a concave shape, a convex shape, or an uneven shape. For example, when the thickness of the substrate is thin, the substrate bends into a concave shape, so that the apparent thickness of the substrate detected by the mapping mechanism changes. As a result, false determination occurs between substrates with different specifications. Therefore, it is required to have a determination criterion corresponding to the substrate specifications.

[0008] (2) False determination due to differences in carrier specifications In each slot, the shelf portion that holds the lower surface of the peripheral edge of the substrate has an inclined surface. The angle of this inclined surface varies depending on the specifications of the carrier. That is, the inclination angle of each slot varies depending on the specifications of the carrier. When the inclination angle of the slot changes, the way the substrate bends changes, so the apparent thickness of the substrate changes. As a result, false judgments occur between carriers of different specifications. Therefore, it is required to have judgment criteria corresponding to the specifications of the carrier.

[0009] (3) False judgment due to deformation of the carrier For example, the carrier is made of resin and may be distorted during formation. As a result, even for carriers of the same specification, the inclination of the substrate may change stepwise from the lowermost slot to the uppermost slot. When the inclination angle changes for each slot, the apparent thickness of the substrate changes for each slot. Therefore, it is required to have judgment criteria corresponding to each slot.

[0010] The present invention has been made based on the above findings and has the following configuration. That is, the substrate processing apparatus according to the present invention includes a mounting table on which a carrier having slots formed in multiple stages in the vertical direction for supporting a substrate in a substantially horizontal posture is mounted, and a mapping mechanism that scans a substrate detection sensor in the vertical direction to obtain Substrate thickness each of the plurality of substrates stored in the carrier for each slot, and includes a storage unit that stores, for each slot, The first threshold value for each slot obtained by multiplying the reference substrate thickness by a coefficient obtained by driving the mapping mechanism with the reference substrate having the same specification as the processing substrate stored in the reference carrier having the same specification as the working carrier, and a control unit that obtains, for each slot, Substrate thickness the processing substrate stored in the working carrier by driving the mapping mechanism with the processing substrate stored in the working carrier, Determine the storage state of the processing substrate for each slot of the working carrier by comparing the substrate thickness of the processing substrate for each slot of the working carrier with the first threshold value for each slot stored in the storage unit and is characterized by comprising the above.

[0011] According to the substrate processing apparatus of the present invention, the storage unit stores, for each slot obtained in a state where a reference substrate having the same specifications as the processing substrate is stored in a reference carrier having the same specifications as the work carrier. The first threshold value That is, the storage unit stores a plurality of The first threshold value (the first threshold value for each slot obtained by multiplying the reference substrate thickness for each slot by a coefficient) corresponding to multi-stage slots. And the control unit compares the Substrate thickness of the processing substrate for each slot of the work carrier with the The first threshold value stored in the storage unit for each slot. Therefore, not only is it compatible with the specifications of the substrate and the carrier, but it is also compared with the determination criteria considering the characteristics of each slot. Therefore, it is possible to accurately determine the storage state of the processing substrate for each slot of the work carrier.

[0012] Further, it is preferable that the above-described substrate processing apparatus further includes a carrier inclination adjustment unit provided on the mounting table for adjusting the inclination of the carrier mounted on the mounting table. The more horizontal the substrate is, the more accurate the reference height information and the height information become. Therefore, it is possible to more accurately determine the storage state of the substrate.

[0014] Further, in the above-described substrate processing apparatus, the control unit compares the substrate thickness of the processing substrate for each slot of the work carrier with the first threshold value for each slot stored in the storage unit, so that in each slot of the work carrier, when the substrate thickness is greater than the first threshold value, it is preferable to determine that there is a stack of two substrates. Thereby, it is possible to accurately determine that there is a stack of two substrates as the storage state of the substrate for each slot of the work carrier.

[0018] Further, the operation method of the substrate processing apparatus according to the present invention includes a mounting table for mounting a carrier in which slots for supporting the substrate in a substantially horizontal posture are formed in multiple stages in the vertical direction, and a substrate detection sensor that scans in the vertical direction to detect the Substrate thicknessA mapping mechanism for acquiring for each slot, and is provided with, in a control method of a substrate processing apparatus in which the substrate includes a processing substrate and a reference substrate, and the carrier includes a working carrier and a reference carrier, by driving the mapping mechanism with the reference substrate having the same specification as the processing substrate stored in the reference carrier having the same specification as the working carrier, the The first threshold value for each slot obtained by multiplying the reference substrate thickness by a coefficient storage step of storing in a storage unit, and by driving the mapping mechanism with the processing substrate stored in the working carrier, the Substrate thickness acquiring for each slot of the Substrate thickness processing substrate stored in the working carrier, and an Determine the storage state of the processing substrate for each slot of the working carrier by comparing the substrate thickness of the processing substrate for each slot of the working carrier with the first threshold value for each slot stored in the storage unit determination step, and is characterized by comprising these.

[0019] Further, the operation method of the substrate processing apparatus described above preferably further includes an inclination adjustment step of adjusting the inclination of the reference carrier placed on the placement table so that the reference substrate stored in a predetermined slot becomes horizontal, before the storage step. The more horizontal the substrate is, the more accurate the reference height information and the height information become. Therefore, the storage state of the substrate can be determined more accurately.

[0020] Further, a control program for a substrate processing apparatus according to the present invention includes a placement table for placing a carrier in which slots for supporting a substrate in a substantially horizontal posture are formed in multiple stages in the vertical direction, and a substrate detection sensor that scans in the vertical direction to obtain the Substrate thickness for each slot of the multiple substrates stored in the carrier, a mapping mechanism, and a control unit, and the substrate includes a processing substrate and a reference substrate, and the carrier includes a working carrier and a reference carrier. This control program causes the control unit to drive the mapping mechanism with the reference substrate having the same specification as the processing substrate stored in the reference carrier having the same specification as the working carrier, and the The first threshold value for each slot obtained by multiplying the reference substrate thickness by a coefficient storage step of storing in a storage unit, and by driving the mapping mechanism with the processing substrate stored in the working carrier, theSubstrate thickness To obtain for each slot Substrate thickness An obtaining step, Determine the storage state of the processing substrate for each slot of the working carrier by comparing the substrate thickness of the processing substrate for each slot of the working carrier with the first threshold value for each slot stored in the storage unit A determination step, and it is characterized by executing them. In addition, a control method for a substrate processing apparatus according to the present invention includes a mounting table for mounting a carrier in which slots for supporting a substrate in a substantially horizontal posture are formed in multiple stages in the vertical direction, and a mapping mechanism for scanning a substrate detection sensor in the vertical direction to obtain the substrate thickness of a plurality of the substrates stored in the carrier for each slot. The substrate includes a processing substrate and a reference substrate, and the carrier includes a working carrier and a reference carrier. In the control method for a substrate processing apparatus, a first threshold value for each slot obtained by multiplying a coefficient by the reference substrate thickness for each slot obtained by driving the mapping mechanism with the reference substrate having the same specifications as the processing substrate stored in the reference carrier having the same specifications as the working carrier is stored in a storage unit; a substrate thickness acquisition step of obtaining the substrate thickness of the processing substrate stored in the working carrier for each slot by driving the mapping mechanism with the processing substrate stored in the working carrier; a determination step of determining the storage state of the processing substrate for each slot of the working carrier by comparing the substrate thickness of the processing substrate for each slot of the working carrier with the first threshold value for each slot stored in the storage unit; and a step of calculating a difference value between a maximum value and a minimum value in the reference substrate thickness for each slot of the reference carrier obtained by driving the mapping mechanism, and notifying an operator that the inclination of the reference carrier needs to be adjusted when the difference value is larger than a preset value.

Advantages of the Invention

[0021] According to the substrate processing apparatus, the control method of the substrate processing apparatus, and the control program of the substrate processing apparatus according to the present invention, the substrate storage state in the carrier can be accurately determined.

Brief Description of the Drawings

[0022]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Example 1

[0023] Hereinafter, Example 1 of the present invention will be described with reference to the drawings. FIG. 1 is a plan view showing a schematic configuration of a substrate processing apparatus according to Example 1.

[0024] <Configuration of Substrate Processing Apparatus 1> Referring to FIG. 1, the substrate processing apparatus 1 includes an index block 2 and a processing block (processing area) 3.

[0025] The processing block 3 performs a preset process on the substrate W. The processing block 3 includes a plurality of processing units 5 and a substrate transfer mechanism (robot) 7. The substrate transfer mechanism 7 is provided in a transfer space 9 extending in the X direction. The substrate transfer mechanism 7 has a hand 7A for holding the substrate W, and transfers the substrate W between the substrate placement unit 11 and the plurality of processing units 5.

[0026] The plurality of processing units 5 perform at least one of liquid processing and heat processing on the substrate W. The liquid processing is, for example, coating processing, developing processing, or cleaning processing. The coating processing is, for example, a process of coating a photoresist solution on the substrate W. When performing liquid processing, the processing unit 5 includes, for example, a holding and rotating unit (not shown) that holds the lower surface of the substrate by vacuum suction and rotates the held substrate W around a vertical axis, and a nozzle (not shown) that discharges a processing liquid onto the substrate held by the holding and rotating unit. When performing heat processing, the processing unit 5 includes a plate (not shown) on which the substrate W is placed and an electric heater (not shown) that heats this plate.

[0027] The indexer block 2 includes a mounting table 13, an indexer mechanism (robot) 15, a housing 17, and a mapping mechanism (robot) 19. The mounting table 13 is configured to be able to mount four open cassettes C. Note that the open cassette C will be hereinafter referred to as "cassette C" as appropriate.

[0028] FIG. 2 shows a plan view of the cassette C. The cassette C has a front opening CF for inserting and removing the substrate W. Further, the cassette C also has a back opening CR on the opposite side of the front opening CF with the substrate W sandwiched therebetween. FIG. 3 is a view of the cassette C seen from the front opening CF side. The cassette C includes, for example, 25 stages of slots SL. The 25 stages of slots SL are arranged at regular intervals in the vertical direction. One slot SL usually houses one substrate W. Therefore, the cassette C can house 25 substrates W, the same number as the 25 stages of slots SL.

[0029] Reference numeral 21 denotes a substrate support portion. The substrate support portion 21 supports the lower surface of the peripheral edge of the substrate W. The space above the substrate support portion 21 constitutes one slot SL. As shown in FIG. 3, each slot SL supports one substrate W in a substantially horizontal posture. Note that although the cassette C includes 25 stages of slots SL, it may include multiple (a plurality of) stages of slots SL.

[0030] The indexer mechanism 15 has a hand 15A for holding the substrate W. The indexer mechanism 15 is provided in a transfer space 17A inside the housing 17. The transfer space 17A is configured to extend in the Y direction. A side wall 17B, which is a part of the housing 17, is provided between the mounting table 13 and the transfer space 17A. A substrate transfer port 22 is provided in the side wall 17B corresponding to the front opening CF of the cassette C mounted on the mounting table 13. The indexer mechanism 15 takes out the substrate W from the cassette C through the substrate transfer port 22 and transfers the taken-out substrate W to the substrate mounting portion 11. Further, the indexer mechanism 15 receives the substrate W processed by the processing block 3 from the substrate mounting portion 11 and returns the received substrate W to the cassette C through the substrate transfer port 22.

[0031] The mapping mechanism 19 scans the substrate detection sensor 23 in the vertical direction in which 25 slots SL are arranged. Thereby, the mapping mechanism 19 acquires the height information of 25 substrates W stored in the cassette C for each slot SL.

[0032] The mapping mechanism 19 includes a substrate detection sensor 23, an arm 24, a column member 27, and a lifting part 29. The substrate detection sensor 23 is composed of a transmissive photoelectric sensor and includes a light emitter 23A and a light receiver 23B. The arm 24 is a U-shaped or C-shaped member in plan view. The light emitter 23A is provided at the first end of the arm 24 on the front opening CF side, and the light receiver 23B is provided at the second end of the arm 24 on the back opening CR side. The light receiver 23B is provided so as to face the light emitter 23A in the horizontal direction. Note that the arrangements of the light emitter 23A and the light receiver 23B may be reversed. The substrate detection sensor 23 may be composed of a reflective photoelectric sensor. Also, in FIG. 2, the light emitter 23A and the light receiver 23B are inclined and face each other with respect to the X direction. In this regard, the light emitter 23A and the light receiver 23B may face each other in a direction parallel to the X direction, or may face each other in a horizontal direction (Y direction) orthogonal to the X direction if necessary.

[0033] The arm 24 is fixed to the upper end of the column member 27. As shown in FIG. 3, the column member 27 passes through the hole 13A of the mounting table 13. The column member 27 is lifted and lowered by the lifting part 29. The lifting part 29 includes a screw shaft 31, a guide member 32, a movable member (slider) 34, and an electric motor M. The screw shaft 31 is arranged parallel to the guide member 32. The screw shaft 31 passes through the nut 34A formed in the movable member 34 while meshing with the nut 34A. Also, the guide member 32 passes through the hole 34B of the movable member 34. The movable member 34 fixes the column member 27. The electric motor M lifts and lowers the movable member 34. For example, the electric motor M rotates the screw shaft 31 around the rotation axis AX1 to lift and lower the movable member 34. Thereby, the substrate detection sensor 23 is lifted and lowered.

[0034] The mapping mechanism 19 is provided with a height sensor 35. The height sensor 35 is composed of, for example, a linear encoder or a rotary encoder. In FIG. 3, the height sensor 35 detects the height position of the substrate detection sensor 23 (specifically, the ON height and the OFF height described later) by detecting the height position of the movable member 34, for example.

[0035] The substrate detection sensor 23 is configured such that the light (for example, infrared light) emitted from the light projector 23A passes through the two openings CF and CR of the cassette C and enters the light receiver 23B. The symbol OP indicates the optical axis. When the light receiver 23B receives the light from the light projector 23A, the substrate detection sensor 23 detects that there is no substrate W (OFF). Here, the "OFF height" is the height when switching from the state with the substrate W to the state without the substrate W. And when the light receiver 23B cannot receive the light from the light projector 23A, the substrate detection sensor 23 detects that there is a substrate W (ON). Here, the "ON height" is the height when switching from the state without the substrate W to the state with the substrate W.

[0036] The difference between the ON height and the OFF height is affected by the deflection, unevenness, and posture of the substrate W in addition to the true thickness of the substrate W. In this specification, such a difference between the ON height and the OFF height is referred to as the apparent thickness of the substrate W. Also, it should be noted that when simply referring to the thickness of the substrate W in this specification, it refers to the apparent thickness of the substrate W. The substrate detection sensor 23 and the height sensor 35 cooperate to obtain the height information of the substrate W for each slot of the cassette C, thereby detecting the apparent thickness of the substrate W for each slot.

[0037] As shown in FIG. 1, the substrate processing apparatus 1 includes a control unit 41, a storage unit (storage medium) 43, and a display unit 45. The control unit 41 controls each component of the substrate processing apparatus 1 (for example, the processing unit 5, the substrate transfer mechanism 7, the indexer mechanism 15, and the mapping mechanism 19), and also writes and reads substrate height information to and from the storage unit 43, and determines the substrate storage state for each slot. The control unit 41 includes one or more processors such as a central processing unit (CPU). The storage unit 43 includes at least one of a ROM (Read - only Memory), a RAM (Random - Access Memory), and a hard disk. The storage unit 43 stores a control program for the substrate processing apparatus 1 to be executed by the control unit 41 (computer). The display unit 45 is configured by, for example, a liquid crystal display or an organic EL (organic electro - luminescence) display.

[0038] In FIG. 1, at least the mounting table 13, the mapping mechanism 19, and the substrate transfer port 22 constitute a load port.

[0039] <Operation of the substrate processing apparatus 1> Next, among the operations of the substrate processing apparatus 1, mainly, a method for determining the storage state of the substrate W will be described. The description of this method is divided into the setting of reference height information for determining the storage state of the substrate W and the mapping operation for the processing substrate W. First, with reference to FIG. 4(a), the setting of reference height information for determining the storage state of the substrate W will be described. In this embodiment, the presence or absence of "two - layer stacking of the substrate W" is determined as the storage state of the substrate W.

[0040] In this specification, a processing substrate W and a reference substrate Wsd appear as the substrate W. Also, a working cassette C and a reference cassette Csd appear as the cassette C. The processing substrate W is given the same reference as the substrate W. Also, the working cassette C is given the same reference as the cassette C.

[0041] 〔Step S01〕Preparation of the reference cassette and the reference substrate The operator prepares a reference cassette Csd and a reference substrate Wsd. The reference cassette Csd is formed with the same specifications as the working cassette C used during production. It is preferable that the reference cassette Csd is formed by the same manufacturer as the working cassette C. Also, the reference cassette Csd is preferably one that has been used for approximately the same amount of time as the working cassette C, taking into account the distortion due to aging deterioration. If the cassette C is distorted, there is a possibility that the inclination of the substrate W within the cassette C will change.

[0042] The reference substrate Wsd is formed with the same specifications as the processing substrate W for production. The same specifications mean, for example, the same material, the same thickness, and the same diameter as the processing substrate W. Also, the same specifications preferably include that a pattern substantially the same as the pattern formed on the surface of the processing substrate W is formed on the surface. Further, if the shape such as unevenness is substantially the same and it can be substituted, the reference substrate Wsd may be a substrate on which no pattern is formed (so-called dummy wafer). Also, since there is a possibility that the cassette C may be distorted due to the residual heat of the processing substrate W after substrate processing, the reference substrate Wsd may be adjusted to approximately the same temperature as the residual heat using an oven or a heat treatment unit, etc.

[0043] Note that, for example, a substrate W outside the SEMI standard is used. The substrate W outside the SEMI standard is a substrate in which either the thickness or the material is outside the standard. For example, when the material of the substrate W is silicon and the thickness is thinner or thicker than the standard. A substrate with a thin thickness is a thickness that is half or less of the thickness of the standard substrate (for example, if the diameter is 200 mm, 0.725 mm). In addition, materials outside the standard include, for example, materials with better conductivity than silicon such as SIC (silicon carbide) or lithium tantalate. A substrate in which either the thickness or the material is outside the standard may be deformed into a concave or convex shape in the shape of a contact lens. In addition, the center of the substrate W may be deformed convexly, and the outside of the center may be deformed concavely into an uneven shape. In addition, as a case of being deformed into an uneven shape, the left side of the substrate W may be concave and the right side thereof may be deformed into a concave shape. Note that the diameter of the substrate W may be 200 mm or 300 mm, or may be other sizes.

[0044] 〔Step S02〕Adjustment of the inclination of the reference cassette For example, the closer to the lowermost stage, the thicker the substrate W is detected, and the closer to the uppermost stage, the thinner the substrate W is detected. Also, depending on the specifications of the cassette C, the reverse may occur. That is, the closer to the lowermost stage, the thinner the substrate W is detected, and the closer to the uppermost stage, the thicker the substrate W is detected. Such an apparent change in the thickness of the substrate W is because the inclination of the substrate W changes due to the internal shape of the cassette C. Note that in FIG. 5(a), it is shown that the inclination angles θ1, θ2, θ3, θ4 of the substrate support portion 21 have a relationship of θ1>θ2>θ3>θ4.

[0045] Since the thickness of the substrate W when the substrate W is inclined is not the true thickness of the substrate W, it may deteriorate the accuracy of the determination. Therefore, the inclination of the reference cassette Csd placed on the mounting table 13 is adjusted so that the reference substrate Wsd stored in the predetermined slot SL becomes horizontal. The more horizontal the substrate W is, the more accurate the threshold value Da and the substrate thickness TK described later become. Therefore, it is possible to more accurately determine the presence or absence (storage state) of two stacked substrates W.

[0046] A specific method will be described. Refer to Fig. 5(b). First, for example, a reference cassette Csd containing a reference substrate Wsd in the first slot SL (the lowermost stage) is placed on the mounting table 13. At this time, the reference cassette Csd is gently placed with the reference substrate Wsd against the back side (the back opening CR side) of the first slot SL. When there is an inclination on the back side of the first slot SL, it is preferable that the peripheral edge of the reference substrate Wsd is placed on the inclination. This is because the inclination (apparent thickness as a result) of the reference substrate Wsd changes depending on whether the peripheral edge of the reference substrate Wsd is placed on the inclination or not. Next, a level 51 is placed on the upper surface of the reference substrate Wsd housed in the first slot SL of the first stage of the reference cassette Csd. As shown in Fig. 5(c), for example, a disk-shaped level indicating two-dimensional inclination is used as the level 51. The level 51 includes a disk-shaped transparent container 51B that houses a liquid and a single air bubble 51A. The level 51 is arranged at the center of the reference substrate Wsd as shown in Fig. 5(c). Note that the level 51 may not be of the type that visually recognizes the air bubble but may be digitally displayed. Also, in order to adjust the two-dimensional inclination, two levels indicating one-dimensional inclination may be used.

[0047] In this state, that is, the state shown in Fig. 5(b), the inclination of the reference cassette Csd is adjusted so that the level 51 indicates horizontal. The adjustment is performed not only in the X direction for inserting and removing the substrate W shown in Fig. 2 but also in the width direction (Y direction) orthogonal to the X direction.

[0048] As shown in Figs. 2 and 5(b), for example, the cassette C is placed on the mounting table 13 via a protective member 53. The protective member 53 is formed of resin to prevent damage to the cassette C and is fixed to the mounting table 13 with screws, for example. By sandwiching a spacer (shim) 55 with a predetermined thickness between the protective member 53 and the mounting table 13, the inclination of the reference cassette Csd placed on the mounting table 13 is adjusted. When sandwiching the spacer 55, the reference cassette Csd may remain placed on the protective member 53 of the mounting table 13, or the reference cassette Csd may be temporarily retracted from the mounting table 13. Note that the spacer 55 corresponds to the carrier inclination adjustment unit of the present invention.

[0049] For example, the inclination of the reference substrate Wsd is preferably 1 / 400 (height / base length) or less (including 1 / 400 and flatter than 1 / 400). For example, when comparing the thicknesses of 25 substrates W stored in the cassette C, the difference value (MAX - MIN) between the maximum value and the minimum value is smaller when the inclination is 1 / 600 than when the inclination is 1 / 400. After adjusting the inclination of the reference cassette Csd, the reference cassette Csd is moved from the mounting table 13.

[0050] Note that even if the reference substrate Wsd stored in the first - stage first slot SL is horizontal, the reference substrate Wsd stored in the 25th - stage 25th slot SL is not necessarily horizontal. However, within the reference cassette Csd, the difference value between the maximum value and the minimum value can be reduced. Also, the inclination adjustment of the reference cassette Csd is performed for each of the four carrier mounting positions shown in FIG. 1.

[0051] Also, in the inclination adjustment of the reference cassette Csd, the reference substrate Wsd was placed in the lowermost slot SL. In this regard, if necessary, the reference substrate Wsd may be placed in the uppermost slot SL, or in any slot SL between the lowermost slot SL and the uppermost slot SL.

[0052] 〔Step S03〕Placement of the reference cassette containing the reference substrate on the mounting table After adjusting the inclination of the reference cassette Csd, the reference cassette Csd containing 25 reference substrates Wsd is placed on the mounting table 13. At this time, the reference cassette Csd is slowly placed with the 25 reference substrates Wsd against the back side (back opening CR side) of the 25 - stage slots SL. A side view showing the back side of the slot SL as seen from the symbol A is shown on the right side of FIG. 2. By placing the reference substrate Wsd against the back side of the slot SL, the postures of the 25 reference substrates Wsd can be uniformly reproduced.

[0053] 〔Step S04〕Execution of the mapping operation on the reference substrate After placing the reference cassette Csd on the mounting table 13, the control unit 41 drives the mapping mechanism 19 with 25 reference substrates Wsd stored in the reference cassette Csd to obtain reference height information (threshold value Da = reference substrate thickness TS × coefficient EFa) for each slot SL.

[0054] Specifically described. The elevating unit 29 raises or lowers the substrate detection sensor 23. At this time, light is emitted from the light emitter 23A of the substrate detection sensor 23. The light emitted from the light emitter 23A is blocked by the reference substrate Wsd at the height position where the reference substrate Wsd exists, and enters the light receiver 23B at the height position where the reference substrate Wsd is absent. The mapping mechanism 19 acquires the ON height and the OFF height. The ON height is the height when switching from the state without the substrate W to the state with the substrate W. The OFF height is the height when switching from the state with the substrate W to the state without the substrate W.

[0055] As shown in FIG. 6(a), the reference substrate thickness TS (or substrate thickness TK) is calculated by reference substrate thickness TS (or substrate thickness TK) = |(OFF height) - (ON height)|. In FIG. 6, for the sake of convenience, the deflection of the substrate W is ignored in the drawing, but the substrate thickness TS (TK) is the apparent thickness of the substrate W described above.

[0056] Therefore, the mapping mechanism 19 acquires 25 reference substrate thicknesses TS corresponding to 25 reference substrates Wsd. In FIG. 7, the 25 reference substrate thicknesses TS are indicated by reference numerals TS1 to TS25.

[0057] Also, a threshold value (for example, reference numeral Da1 in FIG. 7) for determining whether two substrates W are stacked is stored in the storage unit 43. The threshold value (for example, reference numeral Da1) is a value obtained by multiplying a reference substrate thickness (for example, TS1) by a coefficient EFa (for example, 1.3). The coefficient EFa is multiplied by the same value (1.3) for 25 reference substrate thicknesses TS1 to TS25. The coefficient EFa is not limited to 1.3 and is set to a value greater than 1 and less than 2, for example. The coefficient EFa is a numerically determined value experimentally and empirically. If the coefficient EFa is too small, the frequency of erroneously detecting a single substrate as a double-stack will increase. Conversely, if the coefficient EFa is too large, the frequency of erroneously detecting a double-stack substrate as a single substrate will increase.

[0058] [Step S05] Storage of a plurality of reference height information The control unit 41 acquires 25 threshold values Da1 to Da25 corresponding to 25 reference substrates Wsd stored in the reference cassette Csd as reference height information. The 25 threshold values Da1 to Da25 are stored in the storage unit 43. After driving the mapping mechanism 19, the reference cassette Csd is moved from the mounting table 13.

[0059] Next, with reference to FIG. 4(b), the mapping operation for the processing substrate W for production will be described.

[0060] [Step S11] Placement of the work cassette containing the processing substrate on the mounting table After performing steps S01 to S05 shown in FIG. 4(a), the work cassette C is placed on the mounting table 13. Assume that, for example, 25 processing substrates W are stored in this work cassette C.

[0061] [Step S12] Execution of the mapping operation for the processing substrate After placing the working cassette C on the tilt-adjusted mounting table 13, a mapping operation on the processing substrate W is executed. The control unit 41 drives the mapping mechanism 19 with 25 processing substrates W stored in the working cassette C, thereby obtaining the height information (substrate thickness TK) of the 25 processing substrates W stored in the working cassette C for each slot SL. Thereby, usually, 25 substrate thicknesses (reference numerals TK1 to TK25 in FIG. 7) are obtained. This operation is the same as the operation of obtaining the 25 reference substrate thicknesses TS1 to TS25 in step S04.

[0062] 〔Step S13〕Determination of the storage state in each slot The control unit 41 compares the substrate thickness (for example, reference numeral TK1) of the processing substrate W for each slot CL of the working cassette C with the threshold value (for example, reference numeral Da1) for each slot SL stored in the storage unit 43. That is, 25 substrate thicknesses TK1 to TK25 and 25 threshold values Da1 to Da25 are compared for each slot SL. When, for example, 23 substrate thicknesses TK less than 25 are obtained, 23 substrate thicknesses TK and 25 threshold values Da1 to Da25 are compared for each slot SL.

[0063] Thereby, the control unit 41 determines the storage state of the processing substrate W for each slot SL of the working cassette C. The storage state of the substrate W in this embodiment is the presence or absence of two stacked substrates W. Therefore, the control unit 41 determines that there is a two-fold stack of substrates when the substrate thickness (for example, reference numeral TK1) is greater than the first threshold value (for example, reference numeral Da1) for each slot SL of the working cassette C.

[0064] As shown in FIG. 7, for example, the substrate thickness TK1 is compared with the threshold value Da1. When the substrate thickness TK1 is greater than the threshold value Da1, it is determined that there are two stacked substrates W in the first (lowermost) first slot SL. On the other hand, when the substrate thickness TK1 is smaller than the threshold value Da1, it is determined that there are no two stacked substrates W in the first slot SL. Further, the substrate thickness TK2 is compared with the threshold value Da2. When the substrate thickness TK2 is greater than the threshold value Da2, it is determined that there are two stacked substrates W in the second slot SL of the second stage. Similarly, the substrate thickness TK25 is compared with the threshold value Da25. When the substrate thickness TK25 is greater than the threshold value Da25, it is determined that there are two stacked substrates W in the 25th slot SL.

[0065] For the purpose of notifying the operator, the control unit 41 displays, for example, the determination result of the presence or absence of two stacked substrates W on the display unit 45. When there are two stacked substrates W, the control unit 41 may notify the operator by sound from a speaker or by light emission from a lamp. The substrate thickness corresponds to the height information of the present invention. The threshold value (for example, reference numeral Da1) corresponds to the first threshold value and the reference height information of the present invention.

[0066] According to the present embodiment, the storage unit 43 stores the reference height information (threshold value Da = reference substrate thickness TS × coefficient EFa) for each slot SL obtained in a state where the reference substrate Wsd having the same specifications as the processing substrate W is stored in the reference cassette Csd having the same specifications as the working cassette C. That is, the storage unit 43 stores 25 threshold values Da1 to Da25 corresponding to 25 slots SL. Then, the control unit 41 compares the height information (for example, substrate thickness TK1) of the processing substrate W for each slot SL of the working cassette C with the threshold value (for example, reference numeral Da1) for each slot SL stored in the storage unit 43. Therefore, not only does it correspond to the specifications of the substrate W and the cassette C, but it is also compared with the determination criteria considering the characteristics of each slot SL. Therefore, it is possible to accurately determine the presence or absence of two stacked processing substrates W for each slot SL of the working cassette C.

[0067] When the indexer mechanism 15 takes out two overlapping substrates W in a state where two substrates W are stacked, the upper substrate W may fall. It is possible to prevent such a fall of the substrate W.

[0068] FIG. 8 is a diagram showing the relationship between each slot SL and the apparent thickness of the substrate. In FIG. 8, the result of measuring the thickness of one substrate W and the result of measuring the thickness when two substrates W are stacked are shown. In FIG. 8, it shows the result that the thickness increases toward the 25th slot SL. Here, the thickness when two substrates W are stacked in the 20th slot SL (see arrow AR3) is, of course, larger than the thickness of one substrate W (see arrow AR2). However, the thickness of one substrate W in the 20th slot SL (see arrow AR2) is substantially the same as the thickness when two substrates W are stacked in the 1st slot SL (see arrow AR1). Therefore, with a single common threshold value, one substrate W in the 20th slot SL may be determined as "two substrates stacked". According to this embodiment in which the threshold value Da is set for each slot SL, it is possible to accurately determine the presence or absence of "two substrates stacked" accurately for both the 1st slot SL and the 20th slot SL.

[0069] Note that when not particularly distinguished, the reference substrate thicknesses TS1 to TS25 are referred to as the reference substrate thickness TS. The substrate thicknesses TK1 to TK25 are referred to as the substrate thickness TK. The reference substrate center heights HS1 to HS25 described later are referred to as the reference substrate center height HS. The substrate center heights CH1 to CH25 described later are referred to as the substrate center height CH. The threshold values Da1 to Da25 are referred to as the threshold value Da. The threshold values Db1 to Db25 described later are referred to as the threshold value Db. The threshold values Dc1 to Dc25 described later are referred to as the threshold value Dc. The same applies to others.

Embodiment 2

[0070] Next, Embodiment 2 of the present invention will be described with reference to the drawings. Note that descriptions overlapping with those of Embodiment 1 are omitted.

[0071] In Example 1, as the storage state of the substrate W, the presence or absence of two stacked substrates W was determined. For this purpose, the difference between the ON height and the OFF height was detected. However, as the storage state of the substrate W, as shown in FIG. 6(b), as a result of the substrate W being supported while tilted between different slots SL, there may be a "substrate tilted beyond one slot". It is difficult to detect such a tilted substrate W by the difference between the ON height and the OFF height. In Example 2, the center height of the substrate W is used to determine the presence or absence of a "substrate tilted beyond one slot". Hereinafter, a substrate tilted beyond one slot will be appropriately referred to as a "cross substrate". The operation of the substrate processing apparatus 1 is performed in the flow shown in steps S01 to S05 and S11 to S13 of Example 1.

[0072] In step S04 of FIG. 4(a), a mapping operation was performed on 25 reference substrates Wsd stored in the reference cassette Csd. At that time, 25 sets of ON height and OFF height were obtained. In the present embodiment, the center height of each set of ON height and OFF height is calculated as the reference substrate center height HS. The reference substrate center height HS is calculated by the reference substrate center height HS (or substrate center height CH) = ((ON height) + (OFF height)) / 2.

[0073] The control unit 41 acquires 25 reference substrate center heights (reference numerals HS1 to HS25 in FIG. 7) corresponding to 25 reference substrates Wsd. Then, the control unit 41 acquires 25 threshold values (reference numerals Db1 to Db25 in FIG. 7) obtained by adding a preset positive value (reference numeral CNb, constant value) to each of the 25 reference substrate center heights HS1 to HS25. The control unit 41 stores the 25 threshold values Db1 to Db25 in the storage unit 43. The preset positive value CNb is determined, for example, from experiments.

[0074] In step S12 of FIG. 4(b), a mapping operation was performed on 25 processing substrates W stored in the cassette C. At this time, the control unit 41 acquires, for example, 25 substrate center heights (reference numerals CH1 to CH25 in FIG. 7) based on each set of ON height and OFF height.

[0075] Thereafter, in step S13 of FIG. 4(b), the control unit 41 compares the substrate center height (e.g., reference numeral CH1) of the processing substrate W for each slot SL of the working cassette C with the threshold value (e.g., reference numeral Db1) for each slot SL stored in the storage unit 43. That is, the control unit 41 compares the substrate center heights CH1 to CH25 and the threshold values Db1 to Db25 for each slot SL. Thereby, the control unit 41 determines the storage state of the processing substrate W for each slot SL of the working cassette C. The storage state of the substrate W in this embodiment is the presence or absence of a cross substrate. Therefore, the control unit 41 determines that a cross substrate is present when the substrate center height (e.g., reference numeral CH1) is greater than the threshold value (e.g., reference numeral Db1) for each slot SL of the working cassette C.

[0076] As shown in FIG. 7, for example, the substrate center height CH1 and the threshold value Db1 are compared. When the substrate center height CH1 is greater than the threshold value Db1, it is determined that a cross substrate is present in the first slot SL in the first stage (the lowermost stage). On the other hand, when the substrate center height CH1 is smaller than the threshold value Db1, it is determined that no cross substrate is present in the first slot SL. Also, the substrate center height CH2 and the threshold value Db2 are compared. When the substrate center height CH2 is greater than the threshold value Db2, it is determined that a cross substrate is present in the second slot SL in the second stage. Similarly, the substrate center height CH25 and the threshold value Db25 are compared. When the substrate center height CH25 is greater than the threshold value Db25, it is determined that a cross substrate is present in the 25th slot (the uppermost stage) in the 25th stage.

[0077] The control unit 41 displays, for example, the determination result of the presence or absence of the cross substrate on the display unit 45 in order to notify the operator. Note that the substrate center height corresponds to the substrate height and height information of the present invention. Also, the threshold value Db corresponds to the second threshold value and reference height information of the present invention.

[0078] According to this embodiment, it is possible to accurately determine the presence or absence of a cross substrate for each slot SL of the working cassette C.

[0079] The present invention is not limited to the above-described embodiments and can be modified as follows.

[0080] (1) In the above-described Example 2, the presence or absence of a cross substrate was determined using the reference substrate center height HS and the substrate center height CH. In this regard, the presence or absence of two stacked substrates W may be determined (see Fig. 9(a)). The 25 threshold values Dc1 to Dc25 are obtained by adding a positive value (sign CNc, constant value) preset for each of the 25 reference substrate center heights HS1 to HS25. This positive value CNc is greater than 0 and smaller than the positive value CNb.

[0081] The control unit 41 compares the substrate center height (for example, sign CH1) of the processing substrate W for each slot SL of the work cassette C with the threshold value (for example, sign Dc1) for each slot SL stored in the storage unit 43. That is, the control unit 41 compares the 25 substrate center heights CH1 to CH25 with the 25 threshold values Dc1 to Dc25 for each slot SL. Thereby, the control unit 41 determines that there is a double stack of substrates W when the substrate thickness (for example, sign CH1) is greater than the threshold value (for example, Dc1) for each slot SL of the work cassette C. Note that the threshold value Dc corresponds to the second threshold value and the reference height information of the present invention.

[0082] (2) The present invention can also be applied to the detection of the presence or absence of the substrate W. Specifically, in the step of obtaining the height information for each slot SL in the state where the processing substrate W is stored in the work cassette C, the presence or absence of the substrate W can be detected for each slot SL based on whether the height information can be obtained at each slot SL (that is, whether the substrate detection sensor 23 is blocked from light).

[0083] (3) In each of the above-described examples and each of the modified examples, the presence or absence of a "double stack of substrates W" and the presence or absence of a "cross substrate" were determined individually. In this regard, in step S13 of Fig. 4(b), the control unit 41 may determine the presence or absence of a "double stack of substrates W" and the presence or absence of a "cross substrate".

[0084] (4) In each of the above-described embodiments and each of the modified examples, an open-type container called an open cassette was used as the carrier. In this regard, a sealed container provided with an openable lid called a FOUP (Front-Opening Unified Pod) may be used.

[0085] (5) In each of the above-described embodiments and each of the modified examples, the substrate processing apparatus 1 includes one mounting table 5 on which four cassettes C are mounted. In this regard, the substrate processing apparatus 1 may include four mounting tables, and each of the four mounting tables may be configured to mount one cassette C.

[0086] (6) In each of the above-described embodiments and each of the modified examples, the control unit 41 acquires 25 reference substrate thicknesses TS1 to TS25 corresponding to 25 reference substrates Wsd stored in the reference cassette Csd. Here, the control unit 41 may calculate a difference value between the maximum value and the minimum value among the 25 reference substrate thicknesses TS1 to TS25, and notify the operator that the inclination adjustment of the reference cassette Csd in step S02 is necessary when this difference value is larger than a preset value.

[0087] (7) In the above-described embodiment 2 and modified example (1), the threshold values Db and Dc are determined based on the reference substrate center height HS as the reference substrate height, and the substrate height is the substrate center height CH. In this regard, the reference substrate height and the substrate height may be heights obtained from at least one of the OFF height, the ON height, or the OFF height and the ON height.

[0088] (8) In the above-described embodiment 2 and modified examples (1) and (7), the positive values CNb and CNc are constant values. In this regard, if the threshold values Db and Dc do not become constant values in the 25 slots SL, the positive values CNb and CNc may not be constant values.

[0089] (9) In each of the above-described embodiments and each modification, the spacer 55 was used as the carrier tilt adjustment unit. In this regard, the carrier tilt adjustment unit may be, for example, a bolt (external thread) and a nut (internal thread). The nut is fixed to the mounting table 13 so that the bolt engaged with the nut moves in the vertical direction. By moving the bolt relative to the nut, the height of the protection member 53 is adjusted.

[0090] (10) In the above-described Example 1, the presence or absence of two stacked substrates W was determined using the reference substrate thickness TS and the substrate thickness TK. In this regard, if the substrate detection sensor 23 detects the substrate W in the direction of the optical axis OP2 shown in FIG. 2, the presence or absence of a cross substrate may be determined (see FIG. 9(b)). The direction of the optical axis OP2 is the horizontal direction (Y direction) orthogonal to the X direction. As the 25 threshold values Dd1 to Dd25, those obtained by multiplying each of the 25 reference substrate thicknesses TS by the coefficient EFd are used.

[0091] The control unit 41 compares the substrate thickness (for example, TK1) of the processing substrate W for each slot SL of the work cassette C with the threshold value (for example, reference numeral Dd1) for each slot SL stored in the storage unit 43. That is, the control unit 41 compares the 25 substrate thicknesses TK1 to TK25 with the 25 threshold values Dd1 to Dd25 for each slot SL. Thereby, the control unit 41 determines that a cross substrate is present when the substrate thickness (for example, reference numeral TK1) is greater than the threshold value (for example, reference numeral Dd1) for each slot SL of the work cassette C. The threshold value Dd corresponds to the first threshold value and the reference height information of the present invention.

Explanation of Reference Numerals

[0092] 1 … Substrate processing apparatus 13 … Mounting table 19 … Mapping mechanism 21 … Substrate support unit 23 … Substrate detection sensor 41 … Control unit 43 … Storage unit 55 … Spacer C … Open cassette (cassette, work cassette) W … Substrate (Processing Substrate) Csd … Reference Cassette Wsd … Reference Substrate SL … Slot TS … Reference Substrate Thickness TK … Substrate Thickness EFa, EFd … Coefficient Da, Db, Dc, Dd … Threshold Value HS … Reference Substrate Center Height CH … Substrate Center Height CNb, CNc … Positive Value

Claims

1. A mounting table for mounting a carrier in which slots for supporting a substrate in a substantially horizontal posture are formed in multiple stages in the vertical direction, A mapping mechanism that scans a substrate detection sensor in the vertical direction to obtain the substrate thickness of a plurality of the substrates stored in the carrier for each slot, Comprising, The substrate includes a processing substrate and a reference substrate, The carrier includes a working carrier and a reference carrier, Furthermore, a storage unit that stores a first threshold value for each slot obtained by multiplying a coefficient by the reference substrate thickness for each slot obtained by driving the mapping mechanism with the reference substrate having the same specifications as the processing substrate stored in the reference carrier having the same specifications as the working carrier; The substrate thickness of the processing substrate stored in the working carrier is obtained for each slot by driving the mapping mechanism with the processing substrate stored in the working carrier, and the substrate thickness of the processing substrate for each slot of the working carrier is compared with the first threshold value for each slot stored in the storage unit, thereby determining the storage state of the processing substrate for each slot of the working carrier. A control unit, A substrate processing apparatus characterized by comprising.

2. In the substrate processing apparatus according to Claim 1, A substrate processing apparatus, further comprising a carrier inclination adjustment unit provided on the mounting table for adjusting the inclination of the carrier mounted on the mounting table.

3. In the substrate processing apparatus according to Claim 1 or 2, The control unit compares the substrate thickness of the processing substrate for each slot of the working carrier with the first threshold value for each slot stored in the storage unit, and when the substrate thickness is greater than the first threshold value for each slot of the working carrier, determines that there is a double stack of substrates. A substrate processing apparatus characterized by this.

4. A mounting table for mounting a carrier in which slots for supporting a substrate in a substantially horizontal posture are formed in multiple stages in the vertical direction, A mapping mechanism that scans a substrate detection sensor in the vertical direction to obtain the substrate thickness of a plurality of the substrates stored in the carrier for each slot, comprising, In a control method of a substrate processing apparatus in which the substrate includes a processing substrate and a reference substrate, and the carrier includes a working carrier and a reference carrier, A storage step of storing in a storage unit a first threshold value for each slot obtained by multiplying a reference substrate thickness for each slot obtained by driving the mapping mechanism with the reference substrate having the same specifications as the processing substrate stored in the reference carrier having the same specifications as the working carrier; A substrate thickness acquisition step of acquiring the substrate thickness of the processing substrate stored in the working carrier for each slot by driving the mapping mechanism with the processing substrate stored in the working carrier; A determination step of determining the storage state of the processing substrate for each slot of the working carrier by comparing the substrate thickness of the processing substrate for each slot of the working carrier with the first threshold value for each slot stored in the storage unit; A control method for a substrate processing apparatus, characterized by comprising the above.

5. In the substrate processing apparatus according to claim 4, Before the storage step, an inclination adjustment step of adjusting the inclination of the reference carrier placed on the placement table so that the reference substrate stored in a predetermined slot becomes horizontal is further provided. A control method for a substrate processing apparatus, characterized by this.

6. A placement table for placing a carrier in which slots for supporting a substrate in a substantially horizontal posture are formed in multiple stages in the vertical direction; A mapping mechanism that scans a substrate detection sensor in the vertical direction to acquire the substrate thickness of a plurality of the substrates stored in the carrier for each slot; A control unit; Comprising, In a control program for a substrate processing apparatus in which the substrate includes a processing substrate and a reference substrate, and the carrier includes a working carrier and a reference carrier, In the control unit, A storage step of causing the storage unit to store a first threshold value for each slot obtained by multiplying a reference substrate thickness for each slot obtained by driving the mapping mechanism with the reference substrate having the same specifications as the processing substrate stored in the reference carrier having the same specifications as the working carrier; A substrate thickness acquisition step of causing the substrate thickness of the processing substrate stored in the working carrier to be acquired for each slot by driving the mapping mechanism with the processing substrate stored in the working carrier; A determination step of causing the storage state of the processing substrate for each slot of the working carrier to be determined by comparing the substrate thickness of the processing substrate for each slot of the working carrier with the first threshold value for each slot stored in the storage unit; A control program for a substrate processing apparatus, characterized by causing the following to be executed.

7. A mounting table on which a carrier having slots formed in multiple stages in the vertical direction for supporting a substrate in a substantially horizontal posture is placed, A mapping mechanism that scans a substrate detection sensor in the vertical direction to obtain the substrate thickness of a plurality of the substrates stored in the carrier for each slot, In a control method for a substrate processing apparatus, the substrate includes a processing substrate and a reference substrate, and the carrier includes a working carrier and a reference carrier. A storage step of storing in a storage unit a first threshold value for each slot obtained by multiplying a coefficient by the reference substrate thickness for each slot obtained by driving the mapping mechanism with the reference substrate having the same specifications as the processing substrate stored in the reference carrier having the same specifications as the working carrier; A substrate thickness acquisition step of acquiring the substrate thickness of the processing substrate stored in the working carrier for each slot by driving the mapping mechanism with the processing substrate stored in the working carrier; A determination step of determining the storage state of the processing substrate for each slot of the working carrier by comparing the substrate thickness of the processing substrate for each slot of the working carrier with the first threshold value for each slot stored in the storage unit; In the reference substrate thickness for each slot of the reference carrier obtained by driving the mapping mechanism, calculating a difference value between the maximum value and the minimum value, and when this difference value is larger than a preset value, notifying an operator that inclination adjustment of the reference carrier is necessary; A control method for a substrate processing apparatus, characterized by comprising the above.

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