ADC camera precision adjustment method, device, equipment and computer storage medium

Abstract

A method, device, equipment, and computer storage medium for precise adjustment of an ADC camera, the method including: obtaining a height change value of an automatic diameter control (ADC) camera from a solid-liquid interface of a melt by comparing changes in hot zone parts corresponding to the current single crystal silicon rod and a previous single crystal silicon rod, respectively, before pulling out a current single crystal silicon rod; obtaining a horizontal displacement amount of the ADC camera according to the height change value based on a geometric relationship between the height change value and a horizontal displacement amount of the ADC camera; and horizontally moving the ADC camera to a target position according to the horizontal displacement amount of the ADC camera.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority from Chinese Patent Application No. 202111124306.4, filed in China on September 24, 2021, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD Embodiments of the present disclosure relate to the field of semiconductor technology, and more particularly to an ADC camera precision adjustment method, device, apparatus, and computer storage medium. [Background technology]

[0002] Electronic-grade single crystal silicon rods are semiconductor materials typically used in the manufacture of integrated circuits and other electronic components. Currently, the most common method for growing single crystal silicon rods is the Czochralski method, also known as the CZ method. This involves immersing a seed crystal in a silicon melt contained in a crucible in a single crystal furnace, then lifting the seed crystal while rotating the seed crystal and the crucible. The seed crystal is then sequentially processed at its end, including seeding, coning, shouldering, straightening, and tailing, to obtain single crystal silicon rods. Currently, to obtain electronic-grade wafers for different applications, operators must use different hot zones and process conditions to produce different single crystal silicon rods.

[0003] The body stage is a crucial process step in the crystal growth process and is key to ensuring the quality of single crystal silicon rods. Therefore, it is crucial to quickly and effectively achieve the required growth diameter of the single crystal silicon rods at the beginning of the body stage. However, due to different requirements for single crystal silicon rods, the hot zone parts of the single crystal furnace usually require some adjustment. Since the adjustment of the hot zone parts is intended to ensure the growth diameter of the single crystal silicon rods, the adjustment of the hot zone parts also requires a corresponding adjustment of the automatic diameter control (ADC) camera. In conventional technical solutions, the adjustment position of the ADC camera is typically obtained by measuring with an actual scale just before or after entering the body stage. However, in this case, not only is there a certain delay in the adjustment of the ADC camera, but it also requires repeated adjustments to adjust the ADC camera to monitor the growth diameter of the single crystal silicon rods until it reaches the set position. Summary of the Invention [Problem to be solved by the invention]

[0004] In view of this, the embodiments of the present disclosure provide a method, device, equipment, and computer storage medium for precisely adjusting an ADC camera, which can accurately and timely determine the adjustment position of the ADC camera after the hot zone parts are adjusted, and allow the monocrystalline silicon rods to enter the straight body stage quickly and stably from the early stage of the straight body stage, thereby improving the quality of the monocrystalline silicon rods at the early stage of the straight body stage. [Means for solving the problem]

[0005] The technical solution according to the embodiment of the present disclosure is realized as follows.

[0006] In a first aspect, embodiments of the present disclosure include: Before pulling out the current single crystal silicon rod, obtain a change value of the height of an automatic diameter control (ADC) camera from the solid-liquid interface of the melt by comparing the changes of the hot zone parts corresponding to the current single crystal silicon rod and the previous single crystal silicon rod; According to a geometric relationship between the height change value and the horizontal displacement amount of the ADC camera, obtain a horizontal displacement amount of the ADC camera according to the height change value; horizontally moving the ADC camera to a target position according to the horizontal displacement amount of the ADC camera; Including, An ADC camera precision adjustment method is provided, wherein the horizontal displacement amount is a first horizontal displacement amount or a second horizontal displacement amount.

[0007] In a second aspect, embodiments of the present disclosure include: A first acquisition unit configured to acquire a change value of the height of an automatic diameter control (ADC) camera from a solid-liquid interface of a melt by comparing the changes of the hot zone parts corresponding to the current single crystal silicon rod and the previous single crystal silicon rod before pulling out the current single crystal silicon rod; a second acquisition unit configured to acquire a horizontal displacement amount of the ADC camera according to the height change value based on a geometric relationship between the height change value and the horizontal displacement amount of the ADC camera, wherein the horizontal displacement amount is a first horizontal displacement amount or a second horizontal displacement amount; a moving part configured to horizontally move the ADC camera to a target position according to a horizontal displacement amount of the ADC camera; An ADC camera precision adjustment device is provided, including:

[0008] In a third aspect, an embodiment of the present disclosure includes a communication interface, a memory, and a processor, each coupled via a bus system; The communication interface is for receiving and transmitting signals during the process of transmitting and receiving information to and from other external network elements; the memory is for storing a computer program operable on the processor; There is provided an ADC camera precision adjustment device, wherein the processor is configured to execute the steps of the ADC camera precision adjustment method according to the first aspect when the computer program is running.

[0009] In a fourth aspect, an embodiment of the present disclosure provides a computer storage medium storing a program for precision adjustment of an ADC camera, the program performing the steps of the ADC camera precision adjustment method described in the first aspect being implemented when executed by at least one processor.

[0010] In a fifth aspect, an embodiment of the present disclosure provides a computer program product stored in a non-volatile storage medium, the computer program product being executed by at least one processor to implement steps of the ADC camera precision adjustment method described in the first aspect. [Effects of the Invention]

[0011] The embodiments of the present disclosure provide a method, device, equipment, and computer storage medium for precise adjustment of an ADC camera. According to the method, before the current single crystal silicon rod is pulled out, the changes in the hot zone parts corresponding to the current single crystal silicon rod and the previous single crystal silicon rod are compared to obtain the change in height of the ADC camera from the solid-liquid interface of the melt. Then, based on the geometric relationship between the change in height and the horizontal displacement of the ADC camera, the horizontal displacement of the ADC camera is obtained according to the change in height. Finally, the ADC camera is horizontally moved to a target position. This makes it easier to accurately and timely determine the adjustment position of the ADC camera after the hot zone parts are adjusted, so that the single crystal silicon rod can quickly and stably enter the straight body stage from the early stage. As a result, the quality of the single crystal silicon rod at the early stage of the straight body stage is improved. [Brief explanation of the drawings]

[0012] [Figure 1] 1 is a structural schematic diagram of a single crystal furnace according to an embodiment of the present disclosure. [Figure 2] 1 is a schematic diagram of the change in position of hot zone parts of a single crystal furnace according to an embodiment of the present disclosure. FIG. [Figure 3] 1 is a flow diagram of an ADC camera precision adjustment method according to an embodiment of the present disclosure. [Figure 4] FIG. 1 is a schematic diagram of the geometric relationship between the change in height of an ADC camera above the melt surface and the horizontal displacement of the ADC camera according to an embodiment of the present disclosure. [Figure 5] FIG. 10 is a schematic diagram of a rotation angle Δθ of an ADC camera according to an embodiment of the present disclosure. [Figure 6] FIG. 10 is a schematic diagram illustrating an ADC camera according to an embodiment of the present disclosure horizontally moved to a target position. [Figure 7] 1 is a schematic diagram illustrating the configuration of an ADC camera precision adjustment device according to an embodiment of the present disclosure. [Figure 8] 1 is a hardware structure schematic diagram of an ADC camera precision adjustment device according to an embodiment of the present disclosure; DETAILED DESCRIPTION OF THE INVENTION

[0013] Hereinafter, the technical solutions in the embodiments of the present disclosure will be clearly and completely described with reference to the drawings in the embodiments of the present disclosure.

[0014] 1, a single crystal furnace 1 capable of realizing the technical solution according to the embodiment of the present disclosure is shown. The single crystal furnace 1 may include a furnace body 10, in which a heating device and a pulling device are provided. The heating device includes a graphite crucible 20, a quartz crucible 30, and a heater 40, among others. The quartz crucible 30 is for containing silicon raw material such as polysilicon. The silicon raw material is heated in the quartz crucible 30 to melt it into a molten material MS. The graphite crucible 20 is wrapped around the outside of the quartz crucible 30 to support the quartz crucible 30 during the heating process. The heater 40 is provided on the outside of the graphite crucible 20. A heat shield 50 is installed above the quartz crucible 30 and suspended on a heat-insulating cover plate 60. The heat shield 50 has an inverted tapered screen extending downward and surrounding the growth region of the single crystal silicon rods. This blocks direct heat radiation from the heater 40 and the high-temperature melt MS to the grown single crystal silicon rods, thereby reducing the temperature of the single crystal silicon rods. At the same time, the heat shield 50 intensively injects downward-flowing protective gas directly near the growth interface, further enhancing heat dissipation of the single crystal silicon rods. A crucible shaft 70 is installed at the bottom of the graphite crucible 20. A crucible shaft drive device (not shown) is installed at the bottom of the crucible shaft 70 to rotate the quartz crucible 30 using the crucible shaft 70.

[0015] It should be noted that the structure of the crystal pulling furnace 1 shown in Fig. 1 is not specifically limited, and other components required for performing the CZ method to produce single crystal silicon rods are omitted so as to clearly explain the technical solutions according to the embodiments of the present disclosure. Based on the crystal pulling furnace 1 shown in Fig. 1, an observation window 80 may be opened above the furnace body 10 for monitoring the growth diameter of the single crystal silicon rods using an ADC camera 2.

[0016] When using the above-mentioned single crystal furnace 1 to produce single crystal silicon rods, the hot zone parts need to be adjusted for single crystal silicon rods with different demands, for example, as shown in Figure 2, when the previous single crystal silicon rods were drawn, the hot zone parts in the single crystal furnace 1 were as shown in the solid line position in Figure 2, while for the current single crystal silicon rods with different demands, the hot zone parts in the single crystal furnace 1 are as shown in the dashed line position in Figure 2. It can be understood that the adjustment of the hot zone parts in the single crystal furnace 1 is intended to match the growth diameters of the drawn single crystal silicon rods for the previous single crystal silicon rods and the current single crystal silicon rods while meeting different demands. It can be understood that when the hot zone parts corresponding to the current single crystal silicon rod are adjusted and changed, the height position of the solid-liquid interface of the melt MS also changes, as shown in Figure 2. That is, the height of the ADC camera from the solid-liquid interface of the melt MS changes. Therefore, in order to ensure that the growth diameter of the current single crystal silicon rod matches the growth diameter of the previous single crystal silicon rod, the position of the ADC camera 2 must also be adjusted, for example, by horizontally moving the ADC camera 2 from the solid line position to the dashed line position, as shown in Figure 2. However, in the conventional technical solution, the movement displacement of the ADC camera 2 is measured using an actual scale just before or after the current single crystal silicon rod enters the straight body growth stage. It can be understood that measurement using an actual scale has a certain delay and requires repeated adjustment of the ADC camera 2 according to the measurement data, which affects the control accuracy of the growth diameter of the single crystal silicon rod.

[0017] Therefore, based on the above-mentioned contents, referring to FIG. 3, the ADC camera precision adjustment method according to an embodiment of the present disclosure is shown, and the method specifically includes: Before pulling out the current single crystal silicon rod, the change in the hot zone parts corresponding to the current single crystal silicon rod and the previous single crystal silicon rod is compared to obtain the change in the height of the ADC camera from the solid-liquid interface of the melt in step S301; Step S302: based on a geometric relationship between the height change value and the horizontal displacement amount of the ADC camera, acquiring the horizontal displacement amount of the ADC camera according to the height change value, wherein the horizontal displacement amount is a first horizontal displacement amount or a second horizontal displacement amount; S303: horizontally moving the ADC camera to a target position according to the horizontal displacement amount of the ADC camera; Includes:

[0018] According to the technical solution shown in FIG. 3, before the current single crystal silicon rod is pulled out, the changes in the hot zone parts corresponding to the current single crystal silicon rod and the previous single crystal silicon rod are compared to obtain the change in height of the ADC camera from the solid-liquid interface of the melt. Then, based on the geometric relationship between the change in height and the horizontal displacement of the ADC camera, the horizontal displacement of the ADC camera is obtained according to the change in height. Finally, the ADC camera is horizontally moved to the target position. This makes it easier to accurately and timely determine the adjustment position of the ADC camera after the hot zone parts are adjusted, so that the single crystal silicon rod can quickly and stably enter the straight body stage from the early stage, thereby improving the quality of the single crystal silicon rod at the early stage of the straight body stage.

[0019] Regarding the technical solution shown in Figure 3, in some cases, the changes in the hot zone parts corresponding to the current monocrystalline silicon rod and the previous monocrystalline silicon rod are as follows: These include changes in the height of the heat-insulating cover plate in the single crystal furnace, changes in the length of the heat shield, and changes in the liquid level interval of the melt when the current single crystal silicon rod and the previous single crystal silicon rod are pulled out.

[0020] Regarding the technical solution shown in FIG. 3, in some examples, before the current monocrystalline silicon rod is pulled out, the change value of the height of the ADC camera from the solid-liquid interface of the melt can be obtained by comparing the changes of the hot zone parts corresponding to the current monocrystalline silicon rod and the previous monocrystalline silicon rod. By comparing the changes in the hot zone parts corresponding to the current single crystal silicon rod and the previous single crystal silicon rod, the change value Δh1 of the height of the heat-insulating cover plate, the change value Δh2 of the length of the heat shield, and the change value Δh3 of the liquid level interval of the molten material are obtained; When the current single crystal silicon rod is being pulled out, the change value of the height of the ADC camera from the solid-liquid interface of the melt is obtained as ΔH=Δh1+Δh2+Δh3 according to the change value Δh1 of the height of the heat-insulating cover plate, the change value Δh2 of the length of the heat shield, and the change value Δh3 of the liquid level interval of the melt.

[0021] 2, in the actual drawing process of the current single crystal silicon rod, there is a difference in product demand between the current single crystal silicon rod and the previous single crystal silicon rod, and therefore the hot zone parts in the single crystal furnace 1 must be adjusted accordingly, in which case the height position of the solid-liquid interface of the melt MS changes, and further the height of the ADC camera 2 from the solid-liquid interface of the melt also changes accordingly. Specifically, if the change in the position of the heat-insulating cover plate 60 due to a change in the height of the support member is Δh1, it can be understood that in the single crystal furnace 1, when the height position of the heat-insulating cover plate 60 changes, the height position of the heat shield 50 also changes according to the change in the height of the heat-insulating cover plate 60, and therefore the change value Δh1 in the height of the heat-insulating cover plate 60 also represents the change value in the height of the heat shield 50. Meanwhile, during the actual pulling process, the length of the heat shield 50 is also adjusted to ensure the growth diameter of the single crystal silicon rod when pulling different single crystal silicon rods. In the embodiment of the present disclosure, the change in the length of the heat shield 50 is set as Δh2. At the same time, the melt level distance also changes during the hot zone part adjustment process. In the embodiment of the present disclosure, the change in the melt level distance is set as Δh3. Therefore, it can be understood that, before the current single crystal silicon rod is pulled, the change in the height of the ADC camera 2 from the solid-liquid interface of the melt MS can be calculated using the change in the hot zone parts, as ΔH = Δh1 + Δh2 + Δh3. Of course, it can be understood that during the actual crystal pulling process, adjustment of other hot zone parts in the single crystal furnace 1 besides the hot zone parts described above will also affect the height of the solid-liquid interface of the melt MS, and the height of the ADC camera 2 from the solid-liquid interface of the melt MS will also change accordingly. Therefore, it should be noted that in the process of implementing the present disclosure, the change in height of the ADC camera 2 from the solid-liquid interface of the melt MS may include the change in height of other hot zone parts other than the hot zone parts described above, that is, ΔH=Δh1+Δh2+Δh3+...

[0022] It should be noted that in the examples of the present disclosure, the displacement when the solid-liquid interface of the molten material MS moves vertically upward is defined as a positive displacement, and the displacement when the ADC camera 2 moves horizontally to the right is defined as a positive displacement, whereas the displacement when the solid-liquid interface of the molten material MS moves vertically downward is defined as a negative displacement, and the displacement when the ADC camera 2 moves horizontally to the left is defined as a negative displacement.

[0023] Optionally, for the technical solution shown in FIG. 3, in some examples, obtaining the horizontal displacement amount of the ADC camera according to the height change value based on the geometric relationship between the height change value and the horizontal displacement amount of the ADC camera as described above can include: According to the geometric relationship between the height change value and the first horizontal displacement amount of the ADC camera, obtain a first correspondence relationship between the height change value ΔH and the first horizontal displacement amount ΔX1 of the ADC camera as ΔX1=ΔH×tan θ, where θ represents the angle between the ADC camera and the current single crystal silicon rod wall in the vertical direction; obtaining a first horizontal displacement amount ΔX1 of the ADC camera according to the first correspondence relationship and the height change value ΔH; Includes:

[0024] It can be understood that when the height position of the ADC camera 2 from the solid-liquid interface of the melt MS changes, in order to keep the growth diameter of the single crystal silicon rod monitored by the ADC camera 2 constant, it is necessary to adjust the horizontal position of the ADC camera 2 to ensure that the growth diameter of the single crystal silicon rod monitored by the ADC camera 2 remains consistent. Based on this, FIG. 4 is a partial enlarged view of the black circle area in FIG. 2. As can be seen from the geometric relationship in FIG. 4, the first correspondence relationship between the first horizontal displacement amount ΔX1 of the ADC camera 2 and the height change value ΔH is ΔX1 = ΔH × tan θ. Therefore, the horizontal displacement amount ΔX1 due to the horizontal movement of the ADC camera 2 can adjust the effect of the change in ΔH on the growth diameter of the single crystal silicon rod, and in this case, the angle between the ADC camera 2 and the wall of the single crystal silicon rod is θ.

[0025] For the technical solution shown in FIG. 3, in some examples, based on the geometric relationship between the height change value and the horizontal displacement amount of the ADC camera, obtaining the horizontal displacement amount of the ADC camera according to the height change value can be: After the ADC camera rotates horizontally by an angle Δθ, a geometric relationship between the height change value and a second horizontal displacement amount of the ADC camera, and a second correspondence relationship between the height change value ΔH and a second horizontal displacement amount ΔX1 of the ADC camera is obtained as ΔX1=ΔH×tan(θ+Δθ); obtaining a second horizontal displacement amount of the ADC camera according to the second correspondence relationship and the height change value; Includes:

[0026] It should be noted that if the horizontal displacement ΔX1 of the ADC camera 2 described above is too large, the monitoring line of sight of the ADC camera 2 will be blocked by the edge of the observation window 80 or the heat shield 50. Therefore, in order to avoid such an occurrence, the displacement ΔX1 caused by the horizontal movement of the ADC camera will no longer satisfy the operating conditions of the ADC camera 2, and in order to satisfy the monitoring requirements, the ADC camera 2 will need to be moved again.

[0027] To avoid the above-described situation, in a specific implementation of the embodiment of the present disclosure, the second horizontal displacement amount of the ADC camera 2 may be determined based on the angle Δθ by which the ADC camera 2 is rotated horizontally. First, as shown in Figure 5, the ADC camera 2 is rotated horizontally by a certain angle Δθ. Then, according to the geometric relationship and ΔH shown in Figure 5, the second horizontal displacement amount of the ADC camera 2 is calculated as ΔX2 = ΔH × tan(θ + Δθ). This method makes it possible to accurately obtain the adjustment position of the ADC camera 2 and avoid the impact on monitoring accuracy caused by repeated adjustment of the ADC camera 2 at the beginning of the straight body stage.

[0028] It should be noted that a crosshair cursor is provided at the center position of the lens of ADC camera 2, so it is possible to detect in advance whether the horizontal displacement amount ΔX1 due to horizontal movement of ADC camera 2 alone will block the monitoring line of sight of ADC camera 2. Therefore, adjustment of the angle Δθ of ADC camera 2 is a task that only needs to be performed before the straight barrel stage, and can be completed along with the horizontal movement of ADC camera 2, so there is no need to repeatedly adjust ADC camera 2.

[0029] Regarding the technical solution shown in FIG. 3, in some examples, as shown in FIG. 6, horizontally moving the ADC camera to a target position according to the horizontal displacement amount of the ADC camera described above can be: The method includes horizontally moving the ADC camera to a target position according to a first horizontal displacement amount or a second horizontal displacement amount of the ADC camera.

[0030] Based on the same concept as the technical proposal described above, Table 1 below shows the specific results of comparing the calculated and test values of the horizontal displacement of the ADC camera 2.

[0031] [Table 1]

[0032] Based on the same inventive concept as the above-mentioned technical solution, referring to FIG. 7, an ADC camera precision adjustment device 70 according to an embodiment of the present disclosure is shown, which comprises: A first acquisition unit 701 is configured to acquire a change value of the height of the ADC camera from the solid-liquid interface of the melt by comparing the changes of the hot zone parts corresponding to the current single crystal silicon rod and the previous single crystal silicon rod before pulling out the current single crystal silicon rod; a second acquisition part 702 configured to acquire a horizontal displacement amount of the ADC camera according to the height change value based on a geometric relationship between the height change value and the horizontal displacement amount of the ADC camera, wherein the horizontal displacement amount is a first horizontal displacement amount or a second horizontal displacement amount; a moving part 703 configured to horizontally move the ADC camera to a target position according to the horizontal displacement amount of the ADC camera; Includes:

[0033] In some examples, the first obtained portion 701 includes: The device is configured to acquire the change in height of the heat-insulating cover plate in the single crystal furnace, the change in length of the heat shield, and the change in the liquid level interval of the molten material when the current single crystal silicon rod and the previous single crystal silicon rod are pulled out.

[0034] In some examples, the first obtained portion 701 includes: By comparing the changes in the hot zone parts corresponding to the current single crystal silicon rod and the previous single crystal silicon rod, the change value Δh1 of the height of the heat-insulating cover plate, the change value Δh2 of the length of the heat shield, and the change value Δh3 of the liquid level interval of the molten material are obtained, respectively; It is further configured to obtain the change value of the height of the ADC camera from the solid-liquid interface of the melt as ΔH=Δh1+Δh2+Δh3 according to the change value Δh1 of the height of the heat-insulating cover plate, the change value Δh2 of the length of the heat shield, and the change value Δh3 of the liquid level interval of the melt when the current single crystal silicon rod is pulled out.

[0035] In some examples, the second capture portion 702 comprises: According to the geometric relationship between the height change value and the first horizontal displacement amount of the ADC camera, a first correspondence relationship between the height change value ΔH and the first horizontal displacement amount ΔX1 of the ADC camera is obtained as ΔX1=ΔH×tan θ, where θ represents the vertical angle between the ADC camera and the current single crystal silicon rod wall; The apparatus is configured to acquire a first horizontal displacement amount ΔX1 of the ADC camera according to the first correspondence relationship and the height change value ΔH.

[0036] In some examples, the second capture portion 702 comprises: After the ADC camera rotates horizontally by an angle Δθ, a geometric relationship between the height change value and a second horizontal displacement amount of the ADC camera, and a second correspondence relationship between the height change value ΔH and the second horizontal displacement amount ΔX2 of the ADC camera is obtained as ΔX2=ΔH×tan(θ+Δθ); The apparatus is configured to acquire a second horizontal displacement amount of the ADC camera according to the second correspondence relationship and the height change value.

[0037] In some examples, the moving portion 703 may include: The ADC camera is configured to move horizontally to a target position according to the first horizontal displacement amount or the second horizontal displacement amount of the ADC camera.

[0038] As can be understood, in this embodiment, a "part" may be a part of a circuit, a part of a processor, a part of a program or software, etc., and of course, may be a unit, a module, or a non-modular one.

[0039] Furthermore, the components in this embodiment may be integrated into a single processing unit, each unit may exist as a physically separate entity, or two or more units may be integrated into a single unit. The integrated unit may be realized in the form of hardware or a software functional module.

[0040] The integrated unit may be realized in the form of a software functional module and stored in a computer-readable storage medium when sold or used as an independent product. Based on this understanding, an essential part of the technical solution of the present disclosure, a part that contributes to the related art, or all or part of the technical solution may be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions that cause a computer device (which may be a personal computer, a server, a network device, etc.) or a processor to execute all or part of the steps of the method described in this embodiment. The aforementioned storage medium includes any medium capable of storing program code, such as a USB flash drive, a portable hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.

[0041] Therefore, this embodiment provides a computer storage medium storing a program for precision adjustment of an ADC camera, and when the program for precision adjustment of an ADC camera is executed by at least one processor, the steps of the ADC camera precision adjustment method described in the above technical solution are realized.

[0042] According to the above-described ADC camera precision adjustment device 70 and computer storage medium, reference is now made to FIG. 8 , which illustrates a specific hardware structure of a computing device 80 capable of implementing the above-described ADC camera precision adjustment device 70 according to an embodiment of the present disclosure. The computing device 80 may be a wireless device, a mobile phone or cellular phone (including a so-called smartphone), a personal digital assistant (PDA), a video game console (including a video display, a mobile video game device, and a mobile video conferencing unit), a laptop computer, a desktop computer, a television set-top box, a tablet computing device, an e-book reader, a fixed or mobile media player, etc. The computing device 80 includes a communication interface 801, a memory 802, and a processor 803, each of which is coupled via a bus system 804. It is understood that the bus system 804 is for realizing communication between these components. The bus system 804 includes a data bus, a power bus, a control bus, and a status signal bus. However, for clarity, all of the various buses in FIG. 8 are represented as the bus system 804. Among these, The communication interface 801 is for receiving and transmitting signals during the process of transmitting and receiving information to and from other external network elements. The memory 802 is for storing a computer program operable on the processor; The processor 803 is for executing the steps of the ADC camera precision adjustment method described in the above technical solution when the computer program is running.

[0043] It can be understood that the memory 802 in the embodiments of the present disclosure may be volatile memory or non-volatile memory, or may include both volatile and non-volatile memory. The non-volatile memory may be read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), or flash memory. The volatile memory may be random access memory (RAM), which is used as an external high-speed cache. By way of example, various RAMs may be used, such as, but not limited to, static random access memory (Static RAM, SRAM), dynamic random access memory (DRAM), synchronous dynamic random access memory (Synchronous DRAM, SDRAM), double data rate synchronous dynamic random access memory (DDRSDRAM), enhanced synchronous dynamic random access memory (Enhanced SDRAM, ESDRAM), synchronously linked dynamic random access memory (Synchlink DRAM, SLDRAM), and direct memory bus random access memory (Direct Rambus RAM, DRRAM). Memory 802 in the systems and methods described herein includes, but is not limited to, these and any other suitable types of memory.

[0044] The processor 803 may be an integrated circuit chip capable of processing signals. In implementation, each step of the above method may be completed by an integrated logic circuit in hardware within the processor 803 or by instructions in software format. The processor 803 may be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic device, a discrete gate or transistor logic device, a discrete hardware component, or the like. Each method, step, and logic block diagram disclosed in the embodiments of the present disclosure may be realized or executed by the processor. The general-purpose processor may be a microprocessor, any conventional processor, or the like. The linkage of the steps of the method disclosed in the embodiments of the present disclosure may be directly embodied and executed by a hardware decoder processor, or may be executed by a combination of hardware and software modules within the decoder processor. The software module may be located in a storage medium well-known in the art, such as a random access memory, a flash memory, a read-only memory, a programmable read-only memory or an electrically erasable programmable memory, a register, etc. The storage medium is in the memory 802, and the processor 803 reads the information in the memory 802 and completes the steps of the above method in cooperation with its hardware.

[0045] It will be appreciated that the embodiments described herein may be implemented in hardware, software, firmware, middleware, microcode, or a combination thereof. For a hardware implementation, the processing unit may be implemented in one or more Application Specific Integrated Circuits (ASICs), Digital Signal Processing (DSPs), Digital Signal Processing Devices (DSP Devices (DSPDs), Programmable Logic Devices (PLDs), Field-Programmable Gate Arrays (FPGAs), general-purpose processors, controllers, microcontrollers, microprocessors, other electronic units, or a combination thereof, for performing the functions described herein.

[0046] For a software implementation, the techniques described herein may be implemented with modules (e.g., procedures, functions, etc.) that perform the functions described herein. The software code may be stored in a memory and executed by a processor. The memory may be within the processor or external to the processor.

[0047] Specifically, the processor 803 is configured to execute the steps of the ADC camera precision adjustment method described in the aforementioned technical solution when the computer program is running, which will not be repeated here.

[0048] It should be noted that the technical solutions described in the embodiments of the present disclosure can be arbitrarily combined unless they are contradictory.

[0049] The above are only specific embodiments of the present disclosure, and the scope of protection of the present disclosure is not limited thereto. Those skilled in the art can easily think of modifications and substitutions within the technical scope described in the present disclosure, and all such modifications and substitutions should be considered to be within the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be governed by the appended claims.

Claims

1. Before pulling out the current single crystal silicon rod, obtain a change value of the height of an automatic diameter control (ADC) camera from the solid-liquid interface of the melt by comparing the changes of the hot zone parts corresponding to the current single crystal silicon rod and the previous single crystal silicon rod; Obtaining a horizontal displacement amount of the ADC camera according to the height change value based on a geometric relationship between the height change value and the horizontal displacement amount of the ADC camera; horizontally moving the ADC camera to a target position according to the horizontal displacement amount of the ADC camera; Including, the horizontal displacement amount is a first horizontal displacement amount or a second horizontal displacement amount, The changes in the hot zone parts corresponding to the current monocrystalline silicon rod and the previous monocrystalline silicon rod include: The changes in the height of the heat-insulating cover plate in the single crystal furnace, the length of the heat shield, and the liquid level interval of the melt when the current single crystal silicon rod and the previous single crystal silicon rod are pulled out are included. Before pulling out the current single crystal silicon rod, the changes in the hot zone parts corresponding to the current single crystal silicon rod and the previous single crystal silicon rod are compared to obtain the change value of the height of the ADC camera from the solid-liquid interface of the melt. By comparing the changes in the hot zone parts corresponding to the current single crystal silicon rod and the previous single crystal silicon rod, the change value Δh 1 of the height of the heat insulating cover plate, the change value Δh 2 of the length of the heat shield, and the change value Δh 3 of the liquid level interval of the molten material are obtained; When the current single crystal silicon rod is pulled out, a change value of the height of the ADC camera from the solid-liquid interface of the melt is obtained as ΔH=Δh 1 +Δh 2 +Δh 3 according to a change value Δh 1 of the height of the heat-insulating cover plate, a change value Δh 2 of the length of the heat shield, and a change value Δh 3 of the liquid level interval of the melt; Acquiring the horizontal displacement amount of the ADC camera according to the height change value based on the geometric relationship between the height change value and the horizontal displacement amount of the ADC camera includes: According to the geometric relationship between the height change value and the first horizontal displacement amount of the ADC camera, obtain a first correspondence relationship between the height change value ΔH and the first horizontal displacement amount ΔX 1 of the ADC camera as ΔX 1 = ΔH × tan θ, where θ represents the angle between the ADC camera and the current single crystal silicon rod wall in the vertical direction; obtaining a first horizontal displacement amount ΔX 1 of the ADC camera according to the first correspondence relationship and the height change value ΔH; Including, Or, Acquiring the horizontal displacement amount of the ADC camera according to the height change value based on the geometric relationship between the height change value and the horizontal displacement amount of the ADC camera includes: After the ADC camera rotates horizontally by an angle Δθ, a geometric relationship between the height change value and a second horizontal displacement amount of the ADC camera, and a second correspondence relationship between the height change value ΔH and a second horizontal displacement amount ΔX 2 of the ADC camera is obtained as ΔX 2 = ΔH × tan(θ + Δθ); obtaining a second horizontal displacement amount of the ADC camera according to the second correspondence relationship and the height change value; A method for precisely adjusting an ADC camera, comprising:

2. Horizontally moving the ADC camera to a target position according to the horizontal displacement amount of the ADC camera includes: The method of claim 1 , further comprising horizontally moving the ADC camera to a target position according to a first horizontal displacement amount or a second horizontal displacement amount of the ADC camera.

3. A first acquisition unit is configured to acquire a change value of the height of an automatic diameter control (ADC) camera from a solid-liquid interface of a melt by comparing the changes of the hot zone parts corresponding to the current single crystal silicon rod and the previous single crystal silicon rod before pulling out the current single crystal silicon rod; a second acquisition unit configured to acquire a horizontal displacement amount of the ADC camera according to the height change value based on a geometric relationship between the height change value and the horizontal displacement amount of the ADC camera, wherein the horizontal displacement amount is a first horizontal displacement amount or a second horizontal displacement amount; a moving part configured to horizontally move the ADC camera to a target position according to the horizontal displacement amount of the ADC camera; Including, The changes in the hot zone parts corresponding to the current monocrystalline silicon rod and the previous monocrystalline silicon rod include: The changes in the height of the heat-insulating cover plate in the single crystal furnace, the length of the heat shield, and the liquid level interval of the melt when the current single crystal silicon rod and the previous single crystal silicon rod are pulled out are included. The first obtained portion further comprises: By comparing the changes in the hot zone parts corresponding to the current single crystal silicon rod and the previous single crystal silicon rod, the change value Δh 1 of the height of the heat-insulating cover plate, the change value Δh 2 of the length of the heat shield, and the change value Δh 3 of the liquid level interval of the molten material are obtained, respectively; When the current single crystal silicon rod is pulled out, the change value of the height of the ADC camera from the solid-liquid interface of the melt is acquired as ΔH=Δh 1 +Δh 2 +Δh 3 according to the change value Δh 1 of the height of the heat-insulating cover plate, the change value Δh 2 of the length of the heat shield, and the change value Δh 3 of the liquid level interval of the melt, The second obtained portion further comprises: According to the geometric relationship between the height change value and the first horizontal displacement amount of the ADC camera, a first correspondence relationship between the height change value ΔH and the first horizontal displacement amount ΔX 1 of the ADC camera is obtained as ΔX 1 = ΔH × tan θ, where θ represents the angle between the ADC camera and the current single crystal silicon rod wall in the vertical direction; a first horizontal displacement amount ΔX 1 of the ADC camera according to the first correspondence relationship and the height change value ΔH; Or, The second obtained portion further comprises: After the ADC camera rotates horizontally by an angle Δθ, a geometric relationship between the height change value and a second horizontal displacement amount of the ADC camera, and a second correspondence relationship between the height change value ΔH and a second horizontal displacement amount ΔX 2 of the ADC camera are obtained as ΔX 2 = ΔH × tan(θ + Δθ); and acquiring a second horizontal displacement amount of the ADC camera according to the second correspondence relationship and the height change value. ADC camera precision adjustment device.

4. each including a communication interface, a memory, and a processor coupled via a bus system; The communication interface is for receiving and transmitting signals during the process of transmitting and receiving information to and from other external network elements; the memory is for storing a computer program operable on the processor; The ADC camera precision adjustment device, wherein the processor is configured to execute the steps of the ADC camera precision adjustment method according to claim 1 when the computer program is running.

5. 10. A computer storage medium storing a program for precision adjustment of an ADC camera, the program implementing the steps of the ADC camera precision adjustment method of claim 1 when executed by at least one processor.

6. A computer program stored in a non-volatile storage medium, the computer program being executed by at least one processor to implement the steps of the ADC camera precision adjustment method of claim 1.

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