Substrate cleaning apparatus, substrate cleaning system, substrate processing system, substrate cleaning method, and substrate processing method

Abstract

To provide a substrate cleaning device capable of highly maintaining cleanness of an internal space of many substrate cleaning devices by using an exhaust facility having predetermined exhaust capability.SOLUTION: Upper holding devices 10A, 10B hold a substrate W in a horizontal posture without rotating the substrate. A lower holding device 20 rotates the substrate W while adsorbing and holding the substrate. The substrate W held by the upper holding devices 10A, 10B is cleaned by using a cleaning fluid, and the substrate W held by the lower holding device 20 is cleaned by using the cleaning fluid. Gas of a processing space 2S is exhausted through an exhaust system 94 by an exhaust system 99. When the substrate W is held by the upper holding devices 10A, 10B, the gas of the processing space 2S is not exhausted, or the gas of the processing space is exhausted with a first flow rate. When the substrate W is held by the lower holding device 20, the gas of the processing space 2S is exhausted at a second or third flow rate higher than the first flow rate.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a substrate cleaning apparatus, a substrate cleaning system, a substrate processing system, a substrate cleaning method, and a substrate processing method. [Background technology]

[0002] Substrate processing apparatuses are used to perform various processes on various substrates, such as FPD (Flat Panel Display) substrates used in liquid crystal display devices or organic EL (Electro Luminescence) display devices, semiconductor substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, ceramic substrates, and solar cell substrates. Substrate cleaning apparatuses are used to clean substrates.

[0003] For example, the substrate cleaning apparatus described in Patent Document 1 includes two suction pads that hold the peripheral edge of the back surface of the wafer, a spin chuck that holds the central part of the back surface of the wafer, and a brush that cleans the back surface of the wafer. The two suction pads hold the wafer and move laterally. In this state, the central part of the back surface of the wafer is cleaned with the brush. The spin chuck then receives the wafer from the suction pads and rotates while holding the central part of the back surface of the wafer. In this state, the peripheral part of the back surface of the wafer is cleaned with the brush. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent No. 5904169 Summary of the Invention [Problem to be solved by the invention]

[0005] In the substrate cleaning apparatus described in Patent Document 1, the suction pad, spin chuck, and brush are attached to a box-shaped undercup. One end of an exhaust pipe is provided at the bottom of the undercup to exhaust the atmosphere inside the substrate cleaning apparatus to the outside of the substrate cleaning apparatus. The other end of the exhaust pipe is connected to, for example, a factory exhaust system. By properly exhausting the atmosphere inside the substrate cleaning apparatus to the outside of the substrate cleaning apparatus, it is possible to prevent the scattering of cleaning liquid mist and particles inside the substrate cleaning apparatus. This makes it possible to maintain a high level of cleanliness inside the substrate cleaning apparatus.

[0006] In a factory, installing a large number of substrate cleaning apparatuses allows for cleaning a larger number of substrates in a shorter time. However, as the number of substrate cleaning apparatuses installed in the factory increases, an excessive number of exhaust pipes may be connected to the factory's exhaust system, which may result in the required exhaust volume being insufficient for each substrate cleaning apparatus. In this case, it may be impossible to maintain a high level of cleanliness within each substrate cleaning apparatus. Therefore, the number of substrate cleaning apparatuses that can be installed in a factory is limited, for example, by the exhaust capacity of the factory's exhaust system.

[0007] An object of the present invention is to provide a substrate cleaning apparatus, a substrate cleaning system, a substrate processing system, a substrate cleaning method, and a substrate processing method that enable the internal spaces of a greater number of substrate cleaning apparatuses or a greater number of substrate processing apparatuses to be maintained at a high level of cleanliness using exhaust equipment having a predetermined exhaust capacity. [Means for solving the problem]

[0008] (1) A substrate cleaning apparatus according to a first aspect of the present invention is a substrate cleaning apparatus for cleaning a substrate, comprising: a processing chamber having a processing space capable of accommodating a substrate; a first substrate holding part that holds the substrate in a horizontal position without rotating it by contacting multiple portions of the substrate; a second substrate holding part that rotates the substrate around a vertical axis while holding it in a horizontal position by adsorbing it to the substrate; a cleaning part that cleans the substrate held by the first substrate holding part in the processing space with a cleaning liquid, and cleans the substrate held by the second substrate holding part with the cleaning liquid before or after cleaning the substrate held by the first substrate holding part; an exhaust system that connects the processing space to an exhaust facility provided outside the processing chamber and exhausts gas from the processing space by the exhaust facility; and a gas supply system that supplies the gas to the first substrate holding part when the substrate is held by the first substrate holding part. The held substrate is then cleaned using a cleaning solution. When the gas is discharged from the processing space, the gas is not discharged or the gas is discharged from the processing space at the first flow rate, and the substrate is held by the second substrate holder. The held substrate is then cleaned using a cleaning solution. and an exhaust amount adjusting unit that adjusts the flow rate of gas flowing through the exhaust system so that gas in the processing space is exhausted at a second flow rate higher than the first flow rate when the gas is exhausted.

[0009] In the substrate cleaning apparatus, the first substrate holder holds the substrate in a horizontal position without rotating. The substrate is cleaned in this state. When cleaning the substrate held by the first substrate holder, the substrate does not rotate, so cleaning liquid is less likely to splash from the substrate. Therefore, even when gas is not exhausted from the processing space, the cleanliness within the processing space is maintained at a high level. Alternatively, even when gas is exhausted from the processing space at a relatively low first flow rate, the cleanliness within the processing space is maintained at a high level.

[0010] In the substrate cleaning apparatus, the second substrate holder holds the substrate in a horizontal position while rotating it around a vertical axis. The substrate is cleaned in this state. When cleaning the substrate held by the second substrate holder, the substrate rotates, which makes it easy for cleaning liquid to splash from the substrate. Therefore, in the substrate cleaning apparatus, gas is exhausted from the processing space at a relatively high second flow rate. In this case, cleaning liquid splashing from the substrate is efficiently exhausted from the processing space. This prevents a decrease in the cleanliness of the processing space.

[0011] According to the above configuration, the exhaust capacity of the exhaust system required for one substrate cleaning apparatus is adjusted over time. Therefore, when multiple substrate cleaning apparatuses are used with one exhaust system, the multiple substrate cleaning apparatuses can be controlled so that substrates held by the second substrate holders are not cleaned simultaneously. In this case, the level of exhaust capacity of the exhaust system required simultaneously for the multiple substrate cleaning apparatuses is reduced. This makes it possible to maintain high cleanliness in the processing spaces of a larger number of substrate cleaning apparatuses using exhaust systems with a predetermined exhaust capacity.

[0012] (2) After cleaning the substrate held by the second substrate holding unit, the second substrate holding unit may rotate the substrate so that the cleaning liquid used for the cleaning is shaken off from the substrate.

[0013] According to the above configuration, After the substrate has been cleaned, the cleaning liquid used for the cleaning is shaken off from the substrate.

[0014] (3) No. The second substrate holder rotates the substrate held by the second substrate holder at a first rotation speed when cleaning the substrate, and rotates the substrate at a second rotation speed higher than the first rotation speed when shaking off the cleaning liquid from the substrate, and an exhaust amount adjustment unit teeth, When the second substrate holder shakes off the cleaning solution from the substrate, a third flow rate that is higher than the second flow rate The flow rate of the gas flowing through the exhaust system may be adjusted so that the gas in the processing space is exhausted.

[0015] Cleaning liquidWhen the rotation speed of the substrate having the mist attached thereto increases, the mist of the cleaning liquid scattered from the substrate tends to diffuse within the processing space. According to the above configuration, the second rotation speed of the substrate when the cleaning liquid is shaken off is higher than the first rotation speed of the substrate when cleaning. Therefore, when the cleaning liquid is shaken off the substrate, the mist of the cleaning liquid tends to diffuse within the processing space. Even in such a case, when the cleaning liquid is shaken off the substrate, the mist of the cleaning liquid scattered from the substrate tends to diffuse within the processing space. 2 The flow rate is higher than the 3 Therefore, when the cleaning liquid is shaken off from the substrate, the cleanliness of the processing space is maintained at a high level.

[0016] Furthermore, according to the above configuration, due to the relationship between the rotation speed of the substrate, the amount of mist of the cleaning liquid scattered into the processing space when the substrate is cleaned is smaller than the amount of mist of the cleaning liquid scattered into the processing space when the substrate is shaken off and dried. 2 The flow rate of the gas discharged when the cleaning solution is shaken off the substrate is 3 Even if the flow rate is lower than this, sufficient gas is discharged to maintain the cleanliness of the processing space during substrate cleaning, so that excessive exhaust capacity is not required when the substrate is held by the second substrate holder.

[0017] (4) The substrate cleaning apparatus may further include a processing cup that is arranged to surround the second substrate holder in a plan view, and the exhaust system may be configured to exhaust gas from the processing space through a bottom of the processing cup.

[0018] In this case, the cleaning liquid splashed from the substrate held by the second substrate holder can be caught by the processing cup, and the mist of the cleaning liquid splashed in the processing cup can be smoothly discharged from the bottom of the processing cup to the outside of the processing chamber.

[0019] (5) The substrate cleaning apparatus further includes a cup drive unit that supports the processing cup and moves it vertically between a first height position where the processing cup overlaps the substrate held by the second substrate holding unit in a side view and a second height position where the processing cup is lower than the substrate held by the second substrate holding unit in a side view, and the cup drive unit may support the processing cup at the first height position so as to catch cleaning liquid splashing from the substrate when the substrate is held by the second substrate holding unit, and support the processing cup at the second height position when the substrate is held by the first substrate holding unit.

[0020] In this case, while the substrate is held by the second substrate holder, the cleaning liquid scattered from the substrate is prevented from diffusing in the processing space, thereby preventing a decrease in the cleanliness of the processing space.

[0021] (6) A substrate cleaning system according to a second aspect of the present invention has a plurality of substrate cleaning apparatuses according to the first aspect of the present invention and is equipped with a cleaning control unit, wherein the exhaust equipment is used in common for the plurality of substrate cleaning apparatuses, and the cleaning control unit controls the operation of the plurality of substrate cleaning apparatuses so that substrates are not held by the second substrate holding units simultaneously in the plurality of substrate cleaning apparatuses.

[0022] In this case, the level of exhaust capacity of the exhaust system required for multiple substrate cleaning apparatuses can be reduced, and therefore, it becomes possible to maintain high cleanliness in the processing spaces of a larger number of substrate cleaning apparatuses using exhaust systems with a predetermined exhaust capacity.

[0023] (7) A substrate cleaning system according to a third aspect of the present invention has a plurality of substrate cleaning apparatuses according to the first aspect of the present invention and is equipped with a cleaning control unit, wherein the exhaust equipment is used in common for the plurality of substrate cleaning apparatuses, and the cleaning control unit controls the operation of the plurality of substrate cleaning apparatuses so that cleaning liquid is not simultaneously shaken off from the substrates in the plurality of substrate cleaning apparatuses.

[0024] In this case, the level of exhaust capacity of the exhaust system required for multiple substrate cleaning apparatuses can be reduced, and therefore, it becomes possible to maintain high cleanliness in the processing spaces of a larger number of substrate cleaning apparatuses using exhaust systems with a predetermined exhaust capacity.

[0025] (8) A fourth aspect of the present invention provides a substrate processing system for performing a predetermined process on a substrate, the substrate processing system comprising: a plurality of substrate processing apparatuses; and a process control unit for controlling the plurality of substrate processing apparatuses, each of the plurality of substrate processing apparatuses including a process chamber having a process space capable of accommodating a substrate; a first substrate holding unit that holds the substrate in a horizontal position without rotating it by contacting multiple portions of the substrate; and a second substrate holding unit that holds the substrate in a horizontal position by adsorbing the substrate and rotates it around a vertical axis; the processing chamber includes a processing section that performs a first processing on a substrate in the processing space and a second processing on the substrate before or after the first processing; an exhaust system that connects the processing space to an exhaust facility provided outside the processing chamber and exhausts gas from the processing space by the exhaust facility; and an exhaust amount adjustment section that adjusts the flow rate of gas flowing through the exhaust system so that the gas from the processing space is not exhausted or is exhausted at a first flow rate during the first processing, and is exhausted at a second flow rate higher than the first flow rate during the second processing; The exhaust equipment is used in common for multiple substrate processing apparatuses, The processing control unit controls the operations of the plurality of substrate processing apparatuses so that the second processing is not simultaneously performed on the plurality of substrates in the plurality of substrate processing apparatuses. The first process involves cleaning the substrate held by the first substrate holder using a cleaning liquid without rotating the substrate, and the second process involves cleaning the substrate held by the second substrate holder using a cleaning liquid while rotating the substrate.

[0026] In each of the above-described substrate processing apparatuses, gas is not exhausted from the processing space or is exhausted at a relatively low first flow rate during a first processing of the substrate, while gas is exhausted from the processing space at a relatively high second flow rate during a second processing of the substrate.

[0027] In the plurality of substrate processing apparatuses, the second process is not performed simultaneously on the plurality of substrates. In this case, the level of exhaust capacity of the exhaust equipment required simultaneously for the plurality of substrate processing apparatuses is reduced. This makes it possible to maintain high cleanliness in the processing spaces of a greater number of substrate processing apparatuses using exhaust equipment with a predetermined exhaust capacity.

[0028] (9) A substrate cleaning method according to a fifth aspect of the present invention is a substrate cleaning method for cleaning a substrate, the method comprising the steps of: holding the substrate in a horizontal position without rotating it using a first substrate holding part that contacts multiple portions of the substrate in a processing space formed by a processing chamber; cleaning the substrate held by the first substrate holding part with a cleaning liquid; rotating the substrate around a vertical axis while holding it in a horizontal position using a second substrate holding part that adsorbs the substrate in the processing space; cleaning the substrate held by the second substrate holding part with the cleaning liquid; and holding the substrate by the first substrate holding part so that gas in the processing space is not exhausted or is exhausted to the outside of the processing chamber through an exhaust system by an exhaust facility provided outside the processing chamber at a first flow rate. The held substrate is then cleaned using a cleaning solution. adjusting a flow rate of gas flowing through the exhaust system when the substrate is held by the second substrate holder so that the gas in the processing space is exhausted to the outside of the processing chamber through the exhaust system by the exhaust equipment at a second flow rate higher than the first flow rate. The held substrate is then cleaned using a cleaning solution. and adjusting the flow rate of gas through the exhaust system when the exhaust system is operating.

[0029] In this substrate cleaning method, a substrate is held in a horizontal position without being rotated by a first substrate holder. The substrate is cleaned in this state. When cleaning a substrate held by the first substrate holder, the substrate does not rotate, so cleaning liquid is less likely to splash from the substrate. Therefore, even if gas is not exhausted from the processing space, a high level of cleanliness within the processing space is maintained. Alternatively, even if gas is exhausted from the processing space at a relatively low first flow rate, a high level of cleanliness within the processing space is maintained.

[0030] In the substrate cleaning method, the substrate is held in a horizontal position by the second substrate holder and rotated around a vertical axis. The substrate is cleaned in this state. When cleaning the substrate held by the second substrate holder, the substrate rotates, which makes it easy for cleaning liquid to splash from the substrate. Therefore, in the substrate cleaning method, gas is exhausted from the processing space at a relatively high second flow rate. In this case, cleaning liquid splashed from the substrate is efficiently exhausted from the processing space. This prevents a decrease in cleanliness within the processing space.

[0031] The processing chamber, first substrate holder, second substrate holder, and exhaust system constitute, for example, a single substrate cleaning apparatus. According to the above method, the exhaust capacity of the exhaust system required for the single substrate cleaning apparatus is adjusted over time. Therefore, when multiple substrate cleaning apparatuses are used with a single exhaust system, the multiple substrate cleaning apparatuses can be controlled so that substrates held by the second substrate holder are not cleaned simultaneously. In this case, the level of exhaust system capacity required simultaneously for the multiple substrate cleaning apparatuses is reduced. This makes it possible to maintain high cleanliness in the processing spaces of a larger number of substrate cleaning apparatuses using exhaust systems with a predetermined exhaust capacity.

[0032] (10) The substrate cleaning method may further include, after cleaning the substrate held by the second substrate holder, rotating the substrate so that the cleaning liquid used for the cleaning is shaken off from the substrate.

[0033] According to the above configuration, After the substrate has been cleaned, the cleaning liquid used for the cleaning is shaken off from the substrate.

[0034] (11) No. the step of cleaning the substrate held by the second substrate holder with a cleaning liquid includes rotating the substrate held by the second substrate holder at a first rotation speed during the cleaning, and the step of rotating the substrate to shake off the cleaning liquid from the substrate includes rotating the substrate held by the second substrate holder at a second rotation speed higher than the first rotation speed during the shaking off of the cleaning liquid from the substrate; The substrate cleaning method isWhen the second substrate holder shakes off the cleaning solution from the substrate, a third flow rate that is higher than the second flow rate The flow rate of the gas flowing through the exhaust system is adjusted so that the gas in the processing space is exhausted. Step Further It may include.

[0035] Cleaning liquid When the rotation speed of the substrate having the mist attached thereto increases, the mist of the cleaning liquid scattered from the substrate tends to diffuse within the processing space. According to the above configuration, the second rotation speed of the substrate when the cleaning liquid is shaken off is higher than the first rotation speed of the substrate when cleaning. Therefore, when the cleaning liquid is shaken off the substrate, the mist of the cleaning liquid tends to diffuse within the processing space. Even in such a case, when the cleaning liquid is shaken off the substrate, the mist of the cleaning liquid scattered from the substrate tends to diffuse within the processing space. 2 The flow rate is higher than the 3 Therefore, when the cleaning liquid is shaken off from the substrate, the cleanliness of the processing space is maintained at a high level.

[0036] Furthermore, according to the above configuration, due to the relationship between the rotation speed of the substrate, the amount of mist of the cleaning liquid scattered into the processing space when the substrate is cleaned is smaller than the amount of mist of the cleaning liquid scattered into the processing space when the substrate is shaken off and dried. 2 The flow rate of the gas discharged when the cleaning solution is shaken off the substrate is 3 Even if the flow rate is lower than this, sufficient gas is discharged to maintain the cleanliness of the processing space during substrate cleaning, so that excessive exhaust capacity is not required when the substrate is held by the second substrate holder.

[0037] (12) A processing cup is provided to surround the second substrate holder in a plan view, and the substrate is held by the first substrate holder. The held substrate is then cleaned using a cleaning solution. adjusting the flow rate of gas flowing through the exhaust system when the substrate is held by the second substrate holder; The held substrate is then cleaned using a cleaning solution. The step of adjusting the flow rate of gas through the exhaust system while the processing cup is in operation may include exhausting gas from the processing space through the bottom of the processing cup.

[0038] In this case, the cleaning liquid splashed from the substrate held by the second substrate holder can be caught by the processing cup, and the mist of the cleaning liquid splashed in the processing cup can be smoothly discharged from the bottom of the processing cup to the outside of the processing chamber.

[0039] (13) The substrate cleaning method further includes a step of supporting a processing cup and moving the processing cup vertically between a first height position where the processing cup overlaps the substrate held by the second substrate holding unit in a side view and a second height position where the processing cup is lower than the substrate held by the second substrate holding unit in a side view, and the step of supporting and moving the processing cup vertically may include supporting the processing cup at the first height position so as to catch cleaning liquid splashing from the substrate when the substrate is held by the second substrate holding unit, and supporting the processing cup at the second height position when the substrate is held by the first substrate holding unit.

[0040] In this case, while the substrate is held by the second substrate holder, the cleaning liquid splashed from the substrate is prevented from diffusing in the processing space, thereby preventing a decrease in the cleanliness in the processing space.

[0041] (14) A substrate cleaning method according to a sixth aspect of the present invention is a substrate cleaning method for cleaning a plurality of substrates, the method including the step of controlling a plurality of substrate cleaning apparatuses, each of the plurality of substrate cleaning apparatuses including a processing chamber having a processing space capable of accommodating a substrate, a first substrate holding unit that holds the substrate in a horizontal position without rotating it by contacting multiple portions of the substrate, a second substrate holding unit that rotates the substrate around a vertical axis while holding it in a horizontal position by adsorbing the substrate, a cleaning unit that cleans the substrate held by the first substrate holding unit in the processing space with a cleaning liquid, and cleans the substrate held by the second substrate holding unit with the cleaning liquid before or after cleaning the substrate held by the first substrate holding unit, and an exhaust system that connects the processing space to an exhaust facility provided outside the processing chamber and exhausts gas from the processing space through the exhaust facility. and,an exhaust amount adjusting unit that adjusts the flow rate of gas flowing through the gas system, wherein the exhaust equipment is used in common for a plurality of substrate cleaning apparatuses, and the step of controlling the plurality of substrate cleaning apparatuses includes: controlling an exhaust amount adjustment unit of each substrate cleaning apparatus so that, when a substrate is held by a first substrate holding unit and the held substrate is cleaned with a cleaning liquid, gas in the processing space is not exhausted or the gas is exhausted at a first flow rate, and when a substrate is held by a second substrate holding unit and the held substrate is cleaned with a cleaning liquid, the gas in the processing space is exhausted at a second flow rate higher than the first flow rate; Controlling the operations of the plurality of substrate cleaning devices so that substrates are not held by the second substrate holders simultaneously in the plurality of substrate cleaning devices. and Includes.

[0042] This substrate cleaning method reduces the level of exhaust capacity required for the exhaust equipment for multiple substrate cleaning apparatuses simultaneously, thereby enabling the processing spaces of a larger number of substrate cleaning apparatuses to be maintained at a high level of cleanliness using exhaust equipment with a predetermined exhaust capacity.

[0043] (15) A substrate cleaning method according to a seventh aspect of the present invention is a substrate cleaning method for cleaning a plurality of substrates, the method including the step of controlling a plurality of substrate cleaning apparatuses, each of the plurality of substrate cleaning apparatuses including a processing chamber having a processing space capable of accommodating a substrate, a first substrate holding unit that holds the substrate in a horizontal position without rotating it by contacting multiple portions of the substrate, a second substrate holding unit that rotates the substrate around a vertical axis while holding it in a horizontal position by adsorbing the substrate, a cleaning unit that cleans the substrate held by the first substrate holding unit in the processing space with a cleaning liquid, and cleans the substrate held by the second substrate holding unit with the cleaning liquid before or after cleaning the substrate held by the first substrate holding unit, and an exhaust system that connects the processing space to an exhaust facility provided outside the processing chamber and exhausts gas from the processing space through the exhaust facility. and, an exhaust amount adjusting unit that adjusts the flow rate of gas flowing through the gas system, and after cleaning the substrate held by the second substrate holding unit, the second substrate holding unit rotates the substrate so that the cleaning liquid used for the cleaning is shaken off from the substrate, and the exhaust equipment is used in common for a plurality of substrate cleaning apparatuses, and the step of controlling the plurality of substrate cleaning apparatuses includes: controlling an exhaust rate adjustment unit of each substrate cleaning apparatus so that, when a substrate is held by a first substrate holding unit and the held substrate is cleaned with a cleaning liquid, gas from the processing space is not exhausted or is exhausted at a first flow rate, and when a substrate is held by a second substrate holding unit and the held substrate is cleaned with a cleaning liquid, gas from the processing space is exhausted at a second flow rate higher than the first flow rate; and controlling an exhaust rate adjustment unit of each substrate cleaning apparatus so that gas is exhausted from the processing space at a third flow rate higher than the second flow rate when the cleaning liquid is shaken off from the substrate by the second substrate holding unit; This includes controlling the operations of the plurality of substrate cleaning devices so that the cleaning liquid is not shaken off from the substrates simultaneously in the plurality of substrate cleaning devices.

[0044] This substrate cleaning method reduces the level of exhaust capacity required for the exhaust equipment for multiple substrate cleaning apparatuses simultaneously, thereby enabling the processing spaces of a larger number of substrate cleaning apparatuses to be maintained at a high level of cleanliness using exhaust equipment with a predetermined exhaust capacity.

[0045] (16) A substrate processing method according to an eighth aspect of the present invention is a substrate processing method for performing a predetermined process on a plurality of substrates, the method including the step of controlling a plurality of substrate processing apparatuses, each of which includes a processing chamber having a processing space capable of accommodating a substrate; a first substrate holding unit that holds the substrate in a horizontal position without rotating it by contacting multiple portions of the substrate; and a second substrate holding unit that holds the substrate in a horizontal position by adsorbing the substrate and rotates it around a vertical axis; a processing section for performing a first process on a substrate in the processing space and a second process on the substrate before or after the first process; and an exhaust system connecting the processing space to an exhaust facility provided outside the processing chamber and discharging gas from the processing space through the exhaust facility. and, an exhaust amount adjusting unit that adjusts the flow rate of gas flowing through the gas system; The exhaust equipment is used in common for multiple substrate processing apparatuses, The step of controlling the plurality of substrate processing apparatuses includes: controlling an exhaust amount adjusting unit of each substrate processing apparatus so that gas is not exhausted from the processing space or is exhausted at a first flow rate during a first processing, and so that gas is exhausted from the processing space at a second flow rate higher than the first flow rate during a second processing; Controlling the operations of the plurality of substrate processing apparatuses so that the second processing is not performed simultaneously on the plurality of substrates in the plurality of substrate processing apparatuses. The first process is to clean the substrate held by the first substrate holder using a cleaning liquid without rotating the substrate, and the second process is to clean the substrate held by the second substrate holder using a cleaning liquid while rotating the substrate.

[0046] In each of the above-described substrate processing apparatuses, gas is not exhausted from the processing space or is exhausted at a relatively low first flow rate during a first processing of the substrate, while gas is exhausted from the processing space at a relatively high second flow rate during a second processing of the substrate.

[0047] In the plurality of substrate processing apparatuses, the second process is not performed simultaneously on the plurality of substrates. In this case, the level of exhaust capacity of the exhaust equipment required simultaneously for the plurality of substrate processing apparatuses is reduced. This makes it possible to maintain high cleanliness in the processing spaces of a greater number of substrate processing apparatuses using exhaust equipment with a predetermined exhaust capacity. [Effects of the Invention]

[0048] According to the present invention, it is possible to maintain high cleanliness in the internal spaces of a greater number of substrate cleaning apparatuses or a greater number of substrate processing apparatuses using exhaust equipment having a predetermined exhaust capacity. [Brief explanation of the drawings]

[0049] [Figure 1] 1 is a schematic plan view of a substrate cleaning apparatus according to an embodiment of the present invention; [Figure 2] FIG. 2 is an external perspective view showing the internal configuration of the substrate cleaning apparatus of FIG. [Figure 3] FIG. 2 is a schematic side view of the substrate cleaning apparatus for explaining details of an exhaust amount adjusting unit. [Figure 4] FIG. 2 is a schematic side view of the substrate cleaning apparatus for explaining details of an exhaust amount adjusting unit. [Figure 5] FIG. 2 is a schematic side view of the substrate cleaning apparatus for explaining details of an exhaust amount adjusting unit. [Figure 6] 2 is a block diagram showing the configuration of a control system of the substrate cleaning apparatus of FIG. 1. FIG. [Figure 7] 2 is a schematic diagram for explaining the general operation of the substrate cleaning apparatus of FIG. 1. FIG. [Figure 8] 2 is a schematic diagram for explaining the general operation of the substrate cleaning apparatus of FIG. 1. FIG. [Figure 9] 2 is a schematic diagram for explaining the general operation of the substrate cleaning apparatus of FIG. 1. FIG. [Figure 10] 2 is a schematic diagram for explaining the general operation of the substrate cleaning apparatus of FIG. 1. FIG. [Figure 11] 2 is a schematic diagram for explaining the general operation of the substrate cleaning apparatus of FIG. 1. FIG. [Figure 12] 2 is a schematic diagram for explaining the general operation of the substrate cleaning apparatus of FIG. 1. FIG. [Figure 13] 2 is a schematic diagram for explaining the general operation of the substrate cleaning apparatus of FIG. 1. FIG. [Figure 14] 2 is a schematic diagram for explaining the general operation of the substrate cleaning apparatus of FIG. 1. FIG. [Figure 15] 2 is a schematic diagram for explaining the general operation of the substrate cleaning apparatus of FIG. 1. FIG. [Figure 16] 2 is a schematic diagram for explaining the general operation of the substrate cleaning apparatus of FIG. 1. FIG. [Figure 17] 2 is a schematic diagram for explaining the general operation of the substrate cleaning apparatus of FIG. 1. FIG. [Figure 18] 2 is a schematic diagram for explaining the general operation of the substrate cleaning apparatus of FIG. 1. FIG. [Figure 19] FIG. 10 is a diagram illustrating an example of a discharge adjustment table. [Figure 20] FIG. 1 is a schematic plan view showing an example of a substrate cleaning system including a plurality of substrate cleaning apparatuses. [Figure 21] FIG. 21 is a schematic side view of the substrate cleaning system of FIG. 20. [Figure 22] 22 is a diagram for explaining an example of control of the first to fourth substrate cleaning apparatuses in the substrate cleaning system of FIG. 21. FIG. [Figure 23] 22 is a diagram for explaining another example of control of the first to fourth substrate cleaning apparatuses in the substrate cleaning system of FIG. DETAILED DESCRIPTION OF THE INVENTION

[0050] Hereinafter, a substrate cleaning apparatus, a substrate cleaning system, a substrate processing system, a substrate cleaning method, and a substrate processing method according to embodiments of the present invention will be described with reference to the drawings. In the following description, the term "substrate" refers to a semiconductor substrate, a substrate for an FPD (Flat Panel Display) such as a liquid crystal display device or an organic EL (Electro Luminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell. The substrate used in this embodiment has at least a partially circular outer periphery. For example, the outer periphery excluding a positioning notch has a circular shape.

[0051] 1.Configuration of substrate cleaning equipment FIG. 1 is a schematic plan view of a substrate cleaning apparatus according to an embodiment of the present invention. FIG. 2 is an external perspective view showing the internal configuration of the substrate cleaning apparatus 1 of FIG. 1. In the substrate cleaning apparatus 1 according to this embodiment, mutually orthogonal X, Y, and Z directions are defined to clarify the positional relationships. In FIG. 1 and certain figures following FIG. 2, the X, Y, and Z directions are indicated by appropriate arrows. The X and Y directions are orthogonal to each other in a horizontal plane, and the Z direction corresponds to the vertical direction.

[0052] 1, the substrate cleaning apparatus 1 includes upper holding devices 10A and 10B, a lower holding device 20, a base device 30, a delivery device 40, a lower surface cleaning device 50, a cup device 60, an upper surface cleaning device 70, an edge cleaning device 80, and an opening / closing device 90. These components are provided in a unit housing 2. In FIG. 2, the unit housing 2 is indicated by a dotted line.

[0053] The unit housing 2 has a rectangular bottom surface 2a and four side walls 2b, 2c, 2d, and 2e extending upward from the four sides of the bottom surface 2a. The unit housing 2 further has a top surface 2f (FIG. 2) connecting the four side walls 2b, 2c, 2d, and 2e. The side walls 2b and 2c face each other, and the side walls 2d and 2e face each other. The space surrounded by the four side walls 2b, 2c, 2d, and 2e functions as a processing space 2S for performing a predetermined process (cleaning process in this example) on the substrate W.

[0054] A rectangular opening is formed in the center of the side wall 2b. This opening is an loading / unloading opening 2x for the substrate W, and is used when loading and unloading the substrate W into and from the unit housing 2. In Fig. 2, the loading / unloading opening 2x is indicated by a thick dotted line. In the following description, the direction in the Y direction from the inside of the unit housing 2 through the loading / unloading opening 2x toward the outside of the unit housing 2 (the direction from the side wall 2c toward the side wall 2b) is referred to as the front, and the opposite direction (the direction from the side wall 2b toward the side wall 2c) is referred to as the rear.

[0055] An opening / closing device 90 is provided in the portion of the side wall 2b where the loading / unloading opening 2x is formed and in the area nearby. The opening / closing device 90 includes a shutter 91 configured to be able to open and close the loading / unloading opening 2x, and a shutter driver 92 that drives the shutter 91. In FIG. 2, the shutter 91 is indicated by a thick two-dot chain line. The shutter driver 92 drives the shutter 91 to open the loading / unloading opening 2x when the substrate W is loaded into and unloaded from the substrate cleaning apparatus 1. The shutter driver 92 also drives the shutter 91 to close the loading / unloading opening 2x when the substrate W is cleaned in the substrate cleaning apparatus 1.

[0056] A pedestal device 30 is provided in the center of the bottom surface portion 2a. The pedestal device 30 includes a linear guide 31, a movable pedestal 32, and a pedestal drive unit 33. The linear guide 31 includes two rails and is provided to extend in the Y direction from near the side wall portion 2b to near the side wall portion 2c in a plan view. The movable pedestal 32 is provided so as to be movable in the Y direction on the two rails of the linear guide 31. The pedestal drive unit 33 includes, for example, a pulse motor, and moves the movable pedestal 32 in the Y direction on the linear guide 31.

[0057] The lower holding device 20 and the lower surface cleaning device 50 are provided on the movable base 32 so as to be aligned in the Y direction. The lower holding device 20 includes a suction holding unit 21 and a suction holding drive unit 22. The suction holding unit 21 is a so-called spin chuck, and has a circular suction surface that can suction-hold the lower surface of the substrate W, and is configured to be rotatable around an axis extending in the vertical direction (axis in the Z direction). In the following description, when the substrate W is suction-held by the suction holding unit 21, the region of the lower surface of the substrate W that should be suctioned by the suction surface of the suction holding unit 21 is referred to as a lower surface central region. On the other hand, the region of the lower surface of the substrate W that surrounds the lower surface central region is referred to as a lower surface outer region.

[0058] The suction hold driving unit 22 includes a motor. The motor of the suction hold driving unit 22 is provided on the movable base 32 so that the rotation shaft protrudes upward. The suction hold unit 21 is attached to the upper end of the rotation shaft of the suction hold driving unit 22. A suction path is formed on the rotation shaft of the suction hold driving unit 22 to allow the suction hold unit 21 to suction and hold the substrate W. The suction path is connected to an air suction device (not shown). The suction hold driving unit 22 rotates the suction hold unit 21 around the rotation shaft.

[0059] A delivery device 40 is further provided on the movable base 32 near the lower holding device 20. The delivery device 40 includes a plurality of (three in this example) support pins 41, a pin connecting member 42, and a pin lifting / lowering drive unit 43. The pin connecting member 42 is formed so as to surround the suction holding unit 21 in a plan view and connects the plurality of support pins 41. The plurality of support pins 41 extend upward by a certain length from the pin connecting member 42 while being connected to one another by the pin connecting member 42. The pin lifting / lowering drive unit 43 raises and lowers the pin connecting member 42 above the movable base 32. As a result, the plurality of support pins 41 rise and lower relative to the suction holding unit 21.

[0060] The lower surface cleaning device 50 includes a lower surface brush 51, two liquid nozzles 52, a gas ejection unit 53, a lifting support unit 54, a moving support unit 55, a lower surface brush rotation drive unit 55a, a lower surface brush lifting drive unit 55b, and a lower surface brush moving drive unit 55c. The moving support unit 55 is provided so as to be movable in the Y direction relative to the lower holding device 20 within a certain area on the movable base 32. As shown in FIG. 2, the lifting support unit 54 is provided on the moving support unit 55 so as to be able to move up and down. The lifting support unit 54 has an upper surface 54u that slopes obliquely downward in a direction away from the suction holding unit 21 (rearward in this example).

[0061] 1, the lower surface brush 51 has a circular outer shape in a plan view, and is formed to be relatively large in this embodiment. Specifically, the diameter of the lower surface brush 51 is larger than the diameter of the suction surface of the suction holding unit 21, for example, 1.3 times the diameter of the suction surface of the suction holding unit 21. The diameter of the lower surface brush 51 is also larger than 1 / 3 and smaller than 1 / 2 of the diameter of the substrate W. The diameter of the substrate W is, for example, 300 mm.

[0062] The lower surface brush 51 has a cleaning surface that can come into contact with the lower surface of the substrate W. The lower surface brush 51 is attached to the upper surface 54u of the lifting support part 54 so that the cleaning surface faces upward and so that the cleaning surface can rotate around an axis that passes through the center of the cleaning surface and extends in the vertical direction.

[0063] Each of the two liquid nozzles 52 is attached to the upper surface 54u of the lifting support part 54 so as to be located near the lower surface brush 51 and so that its liquid discharge port faces upward. A lower surface cleaning liquid supply part 56 (FIG. 6) is connected to the liquid nozzle 52. The lower surface cleaning liquid supply part 56 supplies cleaning liquid to the liquid nozzle 52. When the substrate W is cleaned by the lower surface brush 51, the liquid nozzle 52 discharges the cleaning liquid supplied from the lower surface cleaning liquid supply part 56 onto the lower surface of the substrate W. In this embodiment, pure water is used as the cleaning liquid supplied to the liquid nozzle 52.

[0064] The gas ejection unit 53 is a slit-shaped gas injection nozzle having a gas ejection port extending in one direction. The gas ejection unit 53 is attached to the upper surface 54u of the lifting support unit 54 so that it is located between the lower surface brush 51 and the suction holding unit 21 in a plan view and has its gas ejection port facing upward. A jet gas supply unit 57 (FIG. 6) is connected to the gas ejection unit 53. The jet gas supply unit 57 supplies gas to the gas ejection unit 53. In this embodiment, an inert gas such as nitrogen gas is used as the gas supplied to the gas ejection unit 53. The gas ejection unit 53 ejects gas supplied from the jet gas supply unit 57 onto the lower surface of the substrate W when the substrate W is cleaned by the lower surface brush 51 and when the lower surface of the substrate W is dried, as described below. In this case, a band-shaped gas curtain extending in the X direction is formed between the lower surface brush 51 and the suction holding unit 21.

[0065] The lower surface brush rotation drive unit 55a includes a motor, and rotates the lower surface brush 51 when the lower surface brush 51 cleans the substrate W. The lower surface brush lift drive unit 55b includes a stepping motor or an air cylinder, and lifts and lowers the lift support unit 54 relative to the moving support unit 55. The lower surface brush movement drive unit 55c includes a motor, and moves the moving support unit 55 in the Y direction on the movable base 32. Here, the position of the lower holding device 20 on the movable base 32 is fixed. Therefore, when the lower surface brush movement drive unit 55c moves the moving support unit 55 in the Y direction, the moving support unit 55 moves relative to the lower holding device 20. In the following description, the position of the lower surface cleaning device 50 when it is closest to the lower holding device 20 on the movable base 32 is referred to as the approach position, and the position of the lower surface cleaning device 50 when it is farthest from the lower holding device 20 on the movable base 32 is referred to as the separated position.

[0066] A cup device 60 is further provided in the center of the bottom surface portion 2a. The cup device 60 includes a cup 61 and a cup drive unit 62. The cup 61 is provided so as to surround the lower holding device 20 and the pedestal device 30 in a plan view and is movable up and down. In FIG. 2, the cup 61 is indicated by a dotted line. The cup drive unit 62 moves the cup 61 between a lower cup position and an upper cup position depending on which portion of the underside of the substrate W is to be cleaned by the lower surface brush 51. The lower cup position is a height position where the upper end of the cup 61 is lower than the substrate W held by the suction holder 21. That is, when the cup 61 is in the lower cup position, the cup 61 is positioned lower than the substrate W held by the suction holder 21 in a side view. The upper cup position is a height position where the upper end of the cup 61 is higher than the suction holder 21. That is, when the cup 61 is in the upper cup position, the cup 61 overlaps the substrate W held by the suction holder 21 in a side view.

[0067] One end of an exhaust system 94 extending to the outside of the substrate cleaning apparatus 1 is connected to the bottom of the cup 61. The other end of the exhaust system 94 is connected to an exhaust facility 99 of the factory provided outside the substrate cleaning apparatus 1.

[0068] The exhaust system 94 is mainly composed of piping. In addition to piping, the exhaust system 94 may also include fluid-related equipment such as joints or valves. An exhaust volume adjustment unit 95 is provided in part of the exhaust system 94 inside the substrate cleaning apparatus 1. Details of the exhaust volume adjustment unit 95 will be described later. The exhaust equipment 99 includes, for example, an exhaust fan, and sucks in air from the exhaust system 94 and discharges it outside the exhaust system 94. The exhaust equipment 99 has a predetermined exhaust capacity (the amount of gas that can be discharged per unit time). When the exhaust equipment 99 is operating, the air pressure in the internal space of the exhaust system 94 is lower than that of the processing space 2S. Therefore, the atmosphere in the processing space 2S of the substrate cleaning apparatus 1 is sucked through the exhaust system 94 and discharged outside the substrate cleaning apparatus 1.

[0069] 3 to 5 are schematic side views of the substrate cleaning apparatus 1 for explaining the details of the exhaust rate adjustment unit 95. As shown in FIG. 3, a gas supply duct 93 is provided near the top surface 2f in the processing space 2S of the substrate cleaning apparatus 1. Clean air is supplied to the gas supply duct 93 from a gas supply device 98 provided outside the unit housing 2. The gas supply duct 93 has a gas discharge port 93a that opens downward. The clean air supplied to the gas supply duct 93 is supplied from the gas discharge port 93a toward the bottom surface 2a, as indicated by the thick dotted arrow in FIG. 3. This generates a downward current of clean air within the processing space 2S.

[0070] The exhaust amount adjustment unit 95 includes a rotating shaft 95a, a damper 95b, and an actuator 95c, and is provided in a part of the exhaust system 94 within the processing space 2S. More specifically, the rotating shaft 95a is fixed inside the piping of the exhaust system 94. A damper 95b is rotatably attached to the rotating shaft 95a inside the piping of the exhaust system 94.

[0071] 3 to 5, to facilitate understanding of the structure of the exhaust amount adjustment unit 95, the rotary shaft 95a and damper 95b provided inside the exhaust system 94 are indicated by solid lines. The actuator 95c rotates the damper 95b between a plurality of predetermined rotational angle positions (three in this example) based on the rotary shaft 95a, based on the control of the control unit 9 (FIG. 6), which will be described later. The actuator 95c also holds the damper 95b at one of the plurality of predetermined rotational angle positions. In this embodiment, it is assumed that a first rotational angle position, a second rotational angle position, and a third rotational angle position are defined as the three predetermined rotational angle positions.

[0072] The example of Fig. 3 shows a state of the damper 95b held at a first rotational angle position. As shown in Fig. 3, when the damper 95b is at the first rotational angle position, it blocks most of the gas flow path inside the exhaust system 94. At this time, a small gap is formed between the inner circumferential surface of the exhaust system 94 and the damper 95b. As a result, when the damper 95b is at the first rotational angle position, the gas in the processing space 2S is exhausted to the outside of the unit housing 2 through the exhaust system 94 at a relatively low first flow rate, as indicated by the solid arrow in Fig. 3.

[0073] On the other hand, the example of Fig. 4 shows a state of the damper 95b held at the second rotational angle position. As shown in Fig. 4, when the damper 95b is at the second rotational angle position, it blocks approximately half of the gas flow path inside the exhaust system 94. As a result, when the damper 95b is at the second rotational angle position, the gas in the processing space 2S is exhausted to the outside of the unit housing 2 through the exhaust system 94 at a second flow rate that is greater than the first flow rate, as indicated by the thick solid arrow in Fig. 4.

[0074] On the other hand, the example of Fig. 5 shows a state of the damper 95b held at a third rotational angle position. As shown in Fig. 5, when the damper 95b is at the third rotational angle position, it opens most of the gas flow path inside the exhaust system 94. As a result, when the damper 95b is at the third rotational angle position, the gas in the processing space 2S is exhausted to the outside of the unit housing 2 through the exhaust system 94 at a third flow rate that is greater than the second flow rate, as indicated by the hollow arrow in Fig. 5.

[0075] As described above, the exhaust amount adjusting unit 95 adjusts the rotation angle position of the damper 95b to adjust the flow rate of the gas exhausted from the processing space 2S by the exhaust equipment 99 through the exhaust system 94. Here, the flow rate of the gas exhausted through the exhaust system 94 refers to the amount of gas flowing through the exhaust system 94 per unit time.

[0076] 2, a pair of upper holding devices 10A and 10B are provided at a height position above cup 61 so as to face each other across base device 30 in a plan view. Upper holding device 10A includes a lower chuck 11A, an upper chuck 12A, a lower chuck driving unit 13A, and an upper chuck driving unit 14A. Upper holding device 10B includes a lower chuck 11B, an upper chuck 12B, a lower chuck driving unit 13B, and an upper chuck driving unit 14B.

[0077] The lower chucks 11A and 11B are disposed symmetrically with respect to a vertical plane extending in the Y direction (front-rear direction) through the center of the suction holding unit 21 in a plan view, and are provided so as to be movable in the X direction within a common horizontal plane. Each of the lower chucks 11A and 11B has two support pieces capable of supporting the peripheral portion of the lower surface of the substrate W from below the substrate W. The lower chuck driving units 13A and 13B move the lower chucks 11A and 11B so that the lower chucks 11A and 11B approach each other or move away from each other.

[0078] Like the lower chucks 11A and 11B, the upper chucks 12A and 12B are disposed symmetrically with respect to a vertical plane extending in the Y direction (front-rear direction) through the center of the suction holding unit 21 in a plan view, and are provided so as to be movable in the X direction within a common horizontal plane. Each of the upper chucks 12A and 12B has two holding pieces configured to abut against two portions of the outer peripheral edge of the substrate W and to be able to hold the outer peripheral edge of the substrate W. The upper chuck driving units 14A and 14B move the upper chucks 12A and 12B so that the upper chucks 12A and 12B approach each other or move away from each other.

[0079] 1, an upper surface cleaning device 70 is provided on one side of the cup 61 so as to be located near the upper holding device 10B in a plan view. The upper surface cleaning device 70 includes a rotary support shaft 71, an arm 72, a spray nozzle 73, and an upper surface cleaning drive unit 74.

[0080] The rotation support shaft 71 is supported on the bottom surface portion 2a by an upper surface cleaning drive unit 74 so as to extend in the vertical direction and to be movable up and down and rotatable. As shown in Fig. 2, the arm 72 is provided at a position above the upper holding device 10B and extends horizontally from the upper end of the rotation support shaft 71. A spray nozzle 73 is attached to the tip of the arm 72.

[0081] An upper surface cleaning fluid supply unit 75 (FIG. 6) is connected to the spray nozzle 73. The upper surface cleaning fluid supply unit 75 supplies a cleaning liquid and a gas to the spray nozzle 73. In this embodiment, pure water is used as the cleaning liquid supplied to the spray nozzle 73, and an inert gas such as nitrogen gas is used as the gas supplied to the spray nozzle 73. When cleaning the upper surface of the substrate W, the spray nozzle 73 mixes the cleaning liquid and the gas supplied from the upper surface cleaning fluid supply unit 75 to generate a mixed fluid, and sprays the generated mixed fluid downward.

[0082] The upper surface cleaning drive unit 74 includes one or more pulse motors, air cylinders, etc., and raises and lowers the rotary support shaft 71 and rotates the rotary support shaft 71. According to the above configuration, by moving the spray nozzle 73 in an arc over the upper surface of the substrate W that is suction-held and rotated by the suction holding unit 21, it is possible to clean the entire upper surface of the substrate W.

[0083] 1, an edge cleaning device 80 is provided on the other side of cup 61 so as to be located near upper holding device 10A in a plan view. Edge cleaning device 80 includes a rotary support shaft 81, an arm 82, a bevel brush 83, and a bevel brush driving unit 84.

[0084] The rotation support shaft 81 is supported by a bevel brush drive unit 84 on the bottom surface portion 2a so as to extend in the vertical direction and to be movable up and down and rotatable. As shown in Fig. 2, the arm 82 is provided at a position above the upper holding device 10A and extends horizontally from the upper end of the rotation support shaft 81. A bevel brush 83 is provided at the tip of the arm 82 so as to protrude downward and to be rotatable around an axis extending in the vertical direction.

[0085] The upper half of the bevel brush 83 has an inverted truncated cone shape, and the lower half has a truncated cone shape. With this bevel brush 83, the outer peripheral edge of the substrate W can be cleaned at the central portion in the vertical direction of the outer peripheral surface.

[0086] The bevel brush driving unit 84 includes one or more pulse motors, air cylinders, etc., and raises and lowers the rotary support shaft 81 and rotates the rotary support shaft 81. According to the above configuration, by bringing the central portion of the outer circumferential surface of the bevel brush 83 into contact with the outer circumferential edge of the substrate W that is being sucked and held by the sucking and holding unit 21 and rotated, the entire outer circumferential edge of the substrate W can be cleaned.

[0087] Here, the bevel brush driving unit 84 further includes a motor built into the arm 82. The motor rotates the bevel brush 83 provided at the tip of the arm 82 around an axis extending in the vertical direction. Therefore, when cleaning the outer circumferential edge of the substrate W, the rotation of the bevel brush 83 improves the cleaning power of the bevel brush 83 at the outer circumferential edge of the substrate W.

[0088] Figure 6 is a block diagram showing the configuration of a control system for the substrate cleaning apparatus 1 of Figure 1. The control unit 9 of Figure 6 includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), and a storage device. The RAM is used as a working area for the CPU. The ROM stores system programs. The storage device stores control programs. The CPU executes the substrate cleaning program stored in the storage device on the RAM to control the operation of each part of the substrate cleaning apparatus 1.

[0089] 6, the control unit 9 mainly controls the lower chuck driving units 13A, 13B and the upper chuck driving units 14A, 14B in order to receive the substrate W carried into the substrate cleaning apparatus 1 and hold it at a position above the suction holding unit 21. The control unit 9 also mainly controls the suction holding driving unit 22 in order to suction and hold the substrate W by the suction holding unit 21 and rotate the suction-held substrate W.

[0090] The control unit 9 also controls the pedestal drive unit 33, mainly to move the movable pedestal 32 relative to the substrate W held by the upper holding devices 10A and 10B. The control unit 9 also controls the pin lift drive unit 43, mainly to move the substrate W between the height position of the substrate W held by the upper holding devices 10A and 10B and the height position of the substrate W held by the suction holder 21.

[0091] Furthermore, the control unit 9 controls a lower surface brush rotation drive unit 55a, a lower surface brush lift drive unit 55b, a lower surface brush movement drive unit 55c, a lower surface cleaning liquid supply unit 56, and a jet gas supply unit 57 in order to clean the lower surface of the substrate W. The control unit 9 also controls a cup drive unit 62 in order to catch, in a cup 61, the cleaning liquid that splashes from the substrate W when the substrate W sucked and held by the suction holding unit 21 is cleaned.

[0092] The control unit 9 also controls the upper surface cleaning drive unit 74 and the upper surface cleaning fluid supply unit 75 to clean the upper surface of the substrate W sucked and held by the suction holder 21. The control unit 9 also controls the bevel brush drive unit 84 to clean the outer circumferential edge of the substrate W sucked and held by the suction holder 21. The control unit 9 also controls the shutter drive unit 92 to open and close the loading / unloading opening 2x of the unit housing 2 when the substrate W is loaded into and unloaded from the substrate cleaning apparatus 1. The control unit 9 also controls the exhaust amount adjustment unit 95 to adjust the flow rate of gas flowing through the exhaust system 94.

[0093] 2. Overview of the operation of the substrate cleaning device 7 to 18 are schematic diagrams illustrating the overall operation of the substrate cleaning apparatus 1 of FIG. 1. In each of FIGS. 7 to 18, a plan view of the substrate cleaning apparatus 1 is shown in the upper part. The middle part shows a side view of the lower holding device 20 and its surroundings as viewed along the Y direction, and the lower part shows a side view of the lower holding device 20 and its surroundings as viewed along the X direction. The side view in the middle part corresponds to the side view taken along line AA in FIG. 1, and the side view in the lower part corresponds to the side view taken along line BB in FIG. 1. To facilitate understanding of the shapes and operating states of each component of the substrate cleaning apparatus 1, the scale of some components is different between the plan view in the upper part and the side views in the middle and lower parts. In addition, in FIGS. 7 to 18, the cup 61 is indicated by a two-dot chain line, and the outline of the substrate W is indicated by a thick dashed line.

[0094] In the initial state before the substrate W is loaded into the substrate cleaning apparatus 1, the shutter 91 of the opening / closing device 90 closes the loading / unloading opening 2x. As shown in FIG. 1 , the lower chucks 11A and 11B are maintained in a state where the distance between them is sufficiently larger than the diameter of the substrate W. The upper chucks 12A and 12B are also maintained in a state where the distance between them is sufficiently larger than the diameter of the substrate W. The movable pedestal 32 of the pedestal device 30 is disposed so that the center of the suction holding part 21 is located at the center of the cup 61 in a plan view. The lower surface cleaning device 50 is disposed at a close position on the movable pedestal 32. The lifting support part 54 of the lower surface cleaning device 50 is disposed so that the cleaning surface (upper end) of the lower surface brush 51 is located below the suction holding part 21.

[0095] In addition, in the delivery device 40, the multiple support pins 41 are positioned below the suction holding unit 21. Furthermore, in the cup device 60, the cup 61 is in the lower cup position. In the following explanation, the center position of the cup 61 in a planar view is referred to as the planar reference position rp. In addition, the position of the movable base 32 on the bottom surface portion 2a when the center of the suction holding unit 21 is at the planar reference position rp in a planar view is referred to as the first horizontal position.

[0096] A substrate W is loaded into the unit housing 2 of the substrate cleaning apparatus 1. Specifically, the shutter 91 opens the loading / unloading opening 2x immediately before the substrate W is loaded. Thereafter, as indicated by the thick solid arrow a1 in Fig. 7, a hand (substrate holding part) RH of a substrate transport robot (not shown) loads the substrate W through the loading / unloading opening 2x into a position approximately in the center of the unit housing 2. At this time, the substrate W held by the hand RH is positioned between the lower chuck 11A and upper chuck 12A and the lower chuck 11B and upper chuck 12B, as shown in Fig. 7.

[0097] Next, as indicated by the thick solid arrow a2 in Fig. 8, the lower chucks 11A and 11B approach each other so that the support pieces of the lower chucks 11A and 11B are positioned below the peripheral portion of the lower surface of the substrate W. In this state, the hand RH descends and exits through the loading / unloading opening 2x. As a result, multiple portions of the peripheral portion of the lower surface of the substrate W held by the hand RH are supported by the support pieces of the lower chucks 11A and 11B. After the hand RH exits, the shutter 91 closes the loading / unloading opening 2x.

[0098] Next, as indicated by the thick solid arrow a3 in Fig. 9, the upper chucks 12A and 12B approach each other so that the holding pieces of the upper chucks 12A and 12B come into contact with the outer peripheral edge of the substrate W. As the holding pieces of the upper chucks 12A and 12B come into contact with multiple portions of the outer peripheral edge of the substrate W, the substrate W supported by the lower chucks 11A and 11B is further held by the upper chucks 12A and 12B. Furthermore, as indicated by the thick solid arrow a4 in Fig. 9, the suction holder 21 is shifted a predetermined distance from the planar reference position rp and the movable base 32 moves forward from the first horizontal position so that the center of the lower surface brush 51 is positioned at the planar reference position rp. At this time, the position of the movable base 32 located above the bottom surface portion 2a is referred to as the second horizontal position.

[0099] Next, as indicated by a thick solid arrow a5 in Fig. 10, the lifting support 54 rises so that the cleaning surface of the lower surface brush 51 comes into contact with the central region of the lower surface of the substrate W. Furthermore, as indicated by a thick solid arrow a6 in Fig. 10, the lower surface brush 51 rotates (spins) around an axis in the vertical direction. As a result, contaminants adhering to the central region of the lower surface of the substrate W are physically peeled off by the lower surface brush 51.

[0100] The lower part of Figure 10 shows an enlarged side view of the portion where the lower-surface brush 51 contacts the underside of the substrate W in a bubble. As shown in the bubble, with the lower-surface brush 51 in contact with the substrate W, the liquid nozzle 52 and the gas ejection unit 53 are held in positions close to the underside of the substrate W. At this time, the liquid nozzle 52 ejects cleaning liquid toward the underside of the substrate W at a position near the lower-surface brush 51, as indicated by the outline arrow a51. As a result, the cleaning liquid supplied from the liquid nozzle 52 to the underside of the substrate W is guided to the contact portion between the lower-surface brush 51 and the substrate W, and contaminants removed from the back surface of the substrate W by the lower-surface brush 51 are washed away by the cleaning liquid. In this way, in the lower-surface cleaning device 50, the liquid nozzle 52 and the lower-surface brush 51 are attached to the lifting support unit 54. This allows the cleaning liquid to be efficiently supplied to the portion of the underside of the substrate W being cleaned by the lower-surface brush 51. This reduces the amount of cleaning liquid consumed and suppresses excessive splashing of the cleaning liquid.

[0101] Here, the upper surface 54u of the lifting support member 54 is inclined obliquely downward in a direction away from the suction holder 21. In this case, when the cleaning liquid containing contaminants falls from the lower surface of the substrate W onto the lifting support member 54, the cleaning liquid received by the upper surface 54u is guided in a direction away from the suction holder 21.

[0102] Furthermore, when the lower surface of the substrate W is cleaned by the lower surface brush 51, the gas ejection unit 53 ejects gas toward the lower surface of the substrate W at a position between the lower surface brush 51 and the suction holder 21, as indicated by the outlined arrow a52 in the blowout in FIG. 10 . In this embodiment, the gas ejection unit 53 is attached to the lifting support unit 54 so that its gas ejection port extends in the X direction. In this case, when gas is ejected from the gas ejection unit 53 toward the lower surface of the substrate W, a band-shaped gas curtain extending in the X direction is formed between the lower surface brush 51 and the suction holder 21. This prevents the cleaning liquid containing contaminants from splashing toward the suction holder 21 when the lower surface of the substrate W is cleaned by the lower surface brush 51. Therefore, when the lower surface of the substrate W is cleaned by the lower surface brush 51, the cleaning liquid containing contaminants is prevented from adhering to the suction holder 21, and the suction surface of the suction holder 21 is kept clean.

[0103] 10, the gas jetting part 53 jets gas obliquely upward from the gas jetting part 53 toward the lower surface brush 51, as shown by the outline arrow a52, but the present invention is not limited to this. The gas jetting part 53 may jet gas from the gas jetting part 53 toward the lower surface of the substrate W along the Z direction.

[0104] 10, when cleaning of the central region of the lower surface of the substrate W is completed, the rotation of the lower surface brush 51 is stopped and the lifting support part 54 is lowered so that the cleaning surface of the lower surface brush 51 is spaced a predetermined distance from the substrate W. In addition, the discharge of the cleaning liquid from the liquid nozzle 52 onto the substrate W is stopped. At this time, the spray of gas from the gas ejection part 53 onto the substrate W continues.

[0105] 11, the movable base 32 moves backward so that the suction holder 21 is positioned at the planar reference position rp. That is, the movable base 32 moves from the second horizontal position to the first horizontal position. At this time, the gas ejection unit 53 continues to eject gas onto the substrate W, so that the central region of the lower surface of the substrate W is gradually dried by the gas curtain.

[0106] Next, as shown by a thick solid arrow a8 in Fig. 12, the lifting support part 54 descends so that the cleaning surface of the lower surface brush 51 is positioned below the suction surface (upper end) of the suction holding part 21. Furthermore, as shown by a thick solid arrow a9 in Fig. 12, the upper chucks 12A and 12B move away from each other so that the holding pieces of the upper chucks 12A and 12B move away from the outer circumferential edge of the substrate W. At this time, the substrate W is supported by the lower chucks 11A and 11B.

[0107] 12, the pin connecting member 42 is raised so that the upper ends of the plurality of support pins 41 are positioned slightly above the lower chucks 11A and 11B. As a result, the substrate W supported by the lower chucks 11A and 11B is received by the plurality of support pins 41.

[0108] Next, the lower chucks 11A and 11B move away from each other as indicated by the thick solid arrow a11 in Fig. 13. At this time, the lower chucks 11A and 11B move to positions where they do not overlap the substrate W supported by the multiple support pins 41 in a plan view. As a result, both the upper holding devices 10A and 10B return to their initial states.

[0109] 14, the pin connecting member 42 is lowered so that the upper ends of the plurality of support pins 41 are positioned below the suction holder 21. As a result, the substrate W supported on the plurality of support pins 41 is received by the suction holder 21. In this state, the suction holder 21 suction-holds the central region of the underside of the substrate W. Simultaneously with the descent of the pin connecting member 42 or after the descent of the pin connecting member 42 is completed, the cup 61 is raised from the lower cup position to the upper cup position as shown by the thick solid arrow a13 in FIG.

[0110] 15, the suction holding part 21 rotates around the vertical axis (the axis of the rotation axis of the suction holding drive part 22), thereby rotating the substrate W sucked and held by the suction holding part 21 in a horizontal position.

[0111] Next, the rotary support shaft 71 of the upper surface cleaning device 70 rotates and descends. As a result, as shown by the thick solid arrow a15 in FIG. 15 , the spray nozzle 73 moves to a position above the center of the substrate W, and descends so that the distance between the spray nozzle 73 and the substrate W becomes a predetermined distance. In this state, the spray nozzle 73 sprays a mixed fluid of a cleaning liquid and a gas onto the upper surface of the substrate W. The rotary support shaft 71 also rotates. As a result, as shown by the thick solid arrow a16 in FIG. 15 , the spray nozzle 73 moves outward from the center of the rotating substrate W. The mixed fluid is sprayed onto the entire upper surface of the substrate W, thereby cleaning the entire upper surface of the substrate W.

[0112] Furthermore, when the upper surface of the substrate W is cleaned by the spray nozzle 73, the rotary support shaft 81 of the edge cleaning device 80 also rotates and descends. As a result, the bevel brush 83 moves to a position above the outer circumferential edge of the substrate W, as indicated by the thick solid arrow a17 in FIG. 15 . The central portion of the outer circumferential surface of the bevel brush 83 descends so as to come into contact with the outer circumferential edge of the substrate W. In this state, the bevel brush 83 rotates (spins) around its vertical axis. As a result, contaminants adhering to the outer circumferential edge of the substrate W are physically peeled off by the bevel brush 83. The contaminants peeled off from the outer circumferential edge of the substrate W are washed away by the cleaning liquid of the mixed fluid sprayed onto the substrate W from the spray nozzle 73.

[0113] Furthermore, when the upper surface of the substrate W is cleaned by the spray nozzle 73, the lifting support member 54 is raised so that the cleaning surface of the lower surface brush 51 comes into contact with the outer region of the lower surface of the substrate W. Also, as indicated by the thick solid arrow a18 in Fig. 15, the lower surface brush 51 rotates (spins) around an axis in the vertical direction. Furthermore, the liquid nozzle 52 ejects cleaning liquid toward the lower surface of the substrate W, and the gas ejection member 53 sprays gas toward the lower surface of the substrate W. This allows the lower surface brush 51 to clean the entire outer region of the lower surface of the substrate W that is being sucked and held by the suction holding member 21 and rotated.

[0114] The rotation direction of the lower surface brush 51 may be opposite to the rotation direction of the suction holder 21. In this case, the outer lower surface region of the substrate W can be efficiently cleaned. If the lower surface brush 51 is not relatively large, the movable support member 55 may move back and forth between an approach position and a separated position on the movable base 32, as shown by the thick solid arrow a19 in FIG. 15. Even in this case, the entire outer lower surface region of the substrate W that is suction-held and rotated by the suction holder 21 can be cleaned by the lower surface brush 51. When cleaning the upper surface, outer peripheral edge, and outer lower surface region of the substrate W (during cleaning processing), the rotation speed of the substrate W is set to a first rotation speed of, for example, about 200 rpm to 500 rpm.

[0115] Next, when cleaning of the upper surface, outer peripheral edge, and outer region of the lower surface of the substrate W is completed, spraying of the mixed fluid from the spray nozzle 73 onto the substrate W is stopped. Furthermore, as indicated by a thick solid arrow a20 in FIG. 16 , the spray nozzle 73 moves to a position on one side of the cup 61 (initial state position). Furthermore, as indicated by a thick solid arrow a21 in FIG. 16 , the bevel brush 83 moves to a position on the other side of the cup 61 (initial state position). Furthermore, rotation of the lower surface brush 51 is stopped, and the lifting support member 54 is lowered so that the cleaning surface of the lower surface brush 51 is spaced a predetermined distance from the substrate W. Furthermore, discharge of the cleaning liquid from the liquid nozzle 52 onto the substrate W and spraying of the gas from the gas ejection member 53 onto the substrate W are stopped. In this state, the suction holder 21 rotates at high speed, thereby shaking off the cleaning liquid adhering to the substrate W, and the entire substrate W is dried (drying process). When the cleaning liquid is shaken off from the substrate W (during the drying process), the rotation speed of the substrate W is set to a second rotation speed higher than the first rotation speed, for example, about 2000 rpm to 4000 rpm.

[0116] Next, the cup 61 descends from the upper cup position to the lower cup position as shown by a thick solid arrow a22 in Fig. 17. Furthermore, in preparation for a new substrate W being carried into the unit housing 2, the lower chucks 11A and 11B approach each other to positions where they can support the new substrate W as shown by a thick solid arrow a23 in Fig. 17.

[0117] Finally, the substrate W is unloaded from the unit housing 2 of the substrate cleaning apparatus 1. Specifically, the shutter 91 opens the loading / unloading opening 2x just before the substrate W is unloaded. Thereafter, as indicated by the thick solid arrow a24 in FIG. 18, a hand (substrate holder) RH of a substrate transport robot (not shown) enters the unit housing 2 through the loading / unloading opening 2x. Next, the hand RH receives the substrate W on the suction holder 21 and exits through the loading / unloading opening 2x. After the hand RH exits, the shutter 91 closes the loading / unloading opening 2x.

[0118] 3. Control example of the exhaust volume adjustment unit 95 In the control unit 9 according to this embodiment, a table indicating the relationship between the holding state of the substrate W, the processing state of the substrate W, and the flow rate of gas to be exhausted from the processing space 2S is stored in advance in the storage device as an exhaust adjustment table. Hereinafter, the flow rate of gas to be exhausted from the processing space 2S through the exhaust system 94 will be referred to as a target flow rate. Fig. 19 shows an example of the exhaust adjustment table.

[0119] 19, the target flow rate is set to a first flow rate when the substrate W is not held by either the upper holding device 10A, 10B or the suction holder 21. The target flow rate is also set to a first flow rate when the substrate W is held by the upper holding device 10A, 10B and is not being processed. The target flow rate is also set to a first flow rate when the substrate W is held by the upper holding device 10A, 10B and is being cleaned or dried. When the substrate W is held by the upper holding device 10A, 10B, the substrate W is not rotating, and the cup 61 in FIG. 2 is in the lower cup position.

[0120] Furthermore, the target flow rate is set to a second flow rate when the substrate W is held by the suction holder 21 and is not being processed. The target flow rate is set to a second flow rate when the substrate W is held by the suction holder 21 and is being cleaned. The target flow rate is set to a third flow rate when the substrate W is held by the suction holder 21 and is being dried. When the substrate W is held by the suction holder 21 and is not being processed, the substrate W is not rotating, and the cup 61 in FIG. 2 is in the lower cup position. When the substrate W is held by the suction holder 21 and is being cleaned or dried, the substrate W is rotating, and the cup 61 in FIG. 2 is in the upper cup position.

[0121] The control unit 9 controls the exhaust amount adjustment unit 95 based on the exhaust adjustment table of Fig. 19 during a series of operations of the substrate cleaning apparatus 1 of Figs. 7 to 18. Specifically, the control unit 9 controls the exhaust amount adjustment unit 95 with the target flow rate set to a first flow rate when the substrate cleaning apparatus 1 is in the states shown in Figs. 7, 8, 9, 10, 11, 12, and 13. The control unit 9 also controls the exhaust amount adjustment unit 95 with the target flow rate set to a second flow rate when the substrate cleaning apparatus 1 is in the states shown in Figs. 14, 15, 17, and 18. Furthermore, the control unit 9 controls the exhaust amount adjustment unit 95 with the target flow rate set to a third flow rate when the substrate cleaning apparatus 1 is in the state shown in Fig. 16, i.e., when the cleaning liquid is being shaken off the substrate W (during a drying process).

[0122] 4. Effects of the substrate cleaning device 1 (1) In the substrate cleaning apparatus 1 described above, the upper holding devices 10A and 10B hold the substrate W in a horizontal position without rotating. The substrate W is cleaned in this state. When the substrate W held by the upper holding devices 10A and 10B is cleaned, the substrate W does not rotate, so the cleaning liquid is less likely to splash from the substrate W. Therefore, even when the gas in the processing space 2S is exhausted at a relatively low first flow rate, the cleanliness of the processing space 2S is maintained at a high level.

[0123] Furthermore, in the substrate cleaning apparatus 1 described above, the substrate W is held in a horizontal position by the lower holding device 20 while rotating about a vertical axis. In this state, the substrate W is cleaned. When the substrate W held by the lower holding device 20 is cleaned or dried, the substrate W rotates, which makes it easy for the cleaning liquid to splash from the substrate W. Therefore, when the substrate W is held by the lower holding device 20, the gas in the processing space 2S is exhausted at a relatively high second or third flow rate. In this case, the cleaning liquid splashed from the substrate W is efficiently exhausted from the processing space 2S. This prevents a decrease in the cleanliness of the processing space 2S.

[0124] According to the above configuration, the exhaust capacity of the exhaust equipment 99 required for one substrate cleaning apparatus 1 is adjusted over time. Therefore, when multiple substrate cleaning apparatuses 1 are used with one exhaust equipment 99, the multiple substrate cleaning apparatuses 1 can be controlled so that the substrates W held by the lower holding devices 20 are not cleaned and dried simultaneously. In this case, the level of exhaust capacity of the exhaust equipment 99 required simultaneously for the multiple substrate cleaning apparatuses 1 is reduced. This makes it possible to maintain a high level of cleanliness in the processing spaces 2S of a larger number of substrate cleaning apparatuses 1 by using exhaust equipment 99 having a predetermined exhaust capacity.

[0125] (2) When a substrate W having cleaning liquid adhering thereto rotates, the higher the rotation speed, the more likely the mist of cleaning liquid scattered from the substrate W is to be diffused within the processing space 2S. According to the above configuration, the third rotation speed of the substrate W when the cleaning liquid is shaken off is higher than the second rotation speed of the substrate W when cleaning. Therefore, when the cleaning liquid is shaken off the substrate W, the mist of cleaning liquid is more likely to be diffused within the processing space 2S. Even in this case, when the cleaning liquid is shaken off the substrate W, gas is exhausted from the processing space 2S at a third flow rate that is higher than the first and second flow rates when cleaning the substrate W. Therefore, the cleanliness of the processing space 2S is maintained at a high level when the cleaning liquid is shaken off the substrate W.

[0126] Furthermore, according to the above configuration, due to the rotation speed of the substrate W, the amount of mist of the cleaning liquid scattered into the processing space 2S when the substrate W is cleaned is smaller than the amount of mist of the cleaning liquid scattered into the processing space 2S when the substrate W is shaken off and dried. As a result, even if the second flow rate of the gas discharged when the substrate W is cleaned is lower than the third flow rate of the gas discharged when the cleaning liquid is shaken off from the substrate W, sufficient gas is discharged when the substrate W is cleaned to maintain the cleanliness of the processing space 2S. Therefore, excessive exhaust capacity is not required of the exhaust equipment 99 when the substrate W is held by the lower holding device 20.

[0127] (3) In the substrate cleaning apparatus 1 described above, the cup 61 is provided to surround the lower holding device 20 in a plan view. The exhaust system 94 is provided so that gas in the processing space 2S is exhausted from the bottom of the cup 61. In this case, the cup 61 can catch the cleaning liquid scattered from the substrate W held by the lower holding device 20. In addition, the mist of the cleaning liquid scattered inside the cup 61 is smoothly discharged from the bottom of the cup 61 to the outside of the unit housing 2.

[0128] 5. Substrate cleaning system including multiple substrate cleaning apparatuses 1 (1) Basic configuration of the substrate cleaning system Fig. 20 is a schematic plan view showing an example of a substrate cleaning system including a plurality of substrate cleaning apparatuses 1. As shown in Fig. 20, the substrate cleaning system 100 according to this embodiment has an indexer block 110 and a processing block 120. The indexer block 110 and the processing block 120 are disposed adjacent to each other.

[0129] The indexer block 110 includes a plurality of (four in this example) carrier mounting tables 140 and a transport unit 150. The plurality of carrier mounting tables 140 are connected to the transport unit 150. A carrier C, which stores a plurality of substrates W in multiple stages, is mounted on each carrier mounting table 140. The transport unit 150 is provided with an indexer robot IR and a control device 111. The indexer robot IR is configured to be movable within the transport unit 150, and is also configured to be rotatable around a vertical axis and movable up and down. The indexer robot IR has two hands for transferring substrates W. The control device 111 is composed of a computer including a CPU, ROM, and RAM, and controls each component within the substrate cleaning system 100.

[0130] The processing block 120 includes a cleaning unit 161 and a transport unit 162. The cleaning unit 161 and the transport unit 162 are arranged adjacent to the transport unit 150 and are aligned in this order. In the cleaning unit 161, a plurality of (four in this example) substrate cleaning apparatuses 1 are arranged in a vertically stacked manner.

[0131] The transport section 163 is provided with a main robot MR. The main robot MR is configured to be rotatable around a vertical axis and movable up and down. The main robot MR has two hands for transferring the substrate W. The hands of the main robot MR correspond to the above-mentioned hand RH.

[0132] Between the indexer block 110 and the processing block 120, a plurality of substrate rest parts PASS are stacked one above the other for transferring substrates W between the indexer robot IR and the main robot MR.

[0133] In the substrate cleaning system 100, the indexer robot IR takes out an unprocessed substrate W from one of a plurality of carriers C placed on a plurality of carrier placement stages 140. The indexer robot IR then places the taken-out unprocessed substrate W on one of a plurality of substrate placement parts PASS. The indexer robot IR then receives a processed substrate W placed on one of the plurality of substrate placement parts PASS and stores it in one of the carriers C.

[0134] Furthermore, the main robot MR receives an unprocessed substrate W placed on one of the plurality of substrate placement parts PASS, and transfers it into one of the plurality of substrate cleaning apparatuses 1 in the cleaning section 161. Furthermore, when the cleaning process is completed in one of the plurality of substrate cleaning apparatuses 1, the main robot MR transfers the processed substrate W out of that substrate cleaning apparatus 1 and places it on one of the plurality of substrate placement parts PASS.

[0135] As described above, the substrate cleaning system 100 of Fig. 20 includes a plurality of the substrate cleaning apparatuses 1 of Fig. 1. This allows the upper and lower surfaces of the substrate W to be cleaned in one substrate cleaning apparatus 1 without inverting the substrate W. This improves the throughput of the cleaning process for the substrate W. Furthermore, by stacking a plurality of substrate cleaning apparatuses 1, an increase in the footprint is sufficiently reduced.

[0136] FIG. 21 is a schematic side view of the substrate cleaning system 100 of FIG. 20. The schematic side view of FIG. 21 mainly shows the internal configuration of the transfer section 150 as well as the internal configuration of the cleaning section 161. As shown in FIG. 21, four substrate cleaning apparatuses 1 are stacked in the cleaning section 161. In the following description, when distinguishing between the four substrate cleaning apparatuses 1 in FIG. 21, the bottommost substrate cleaning apparatus 1 will be referred to as the first substrate cleaning apparatus 1A, the second-lowest substrate cleaning apparatus 1 will be referred to as the second substrate cleaning apparatus 1B, the third-lowest substrate cleaning apparatus 1 will be referred to as the third substrate cleaning apparatus 1C, and the topmost substrate cleaning apparatus 1 will be referred to as the fourth substrate cleaning apparatus 1D.

[0137] Clean air is supplied to gas supply duct 93 provided in each of first to fourth substrate cleaning apparatuses 1A to 1D from gas supply device 98 provided outside cleaning section 161. As a result, a downward current of clean air is formed in processing space 2S of each of first to fourth substrate cleaning apparatuses 1A to 1D.

[0138] In this embodiment, one exhaust facility 99 provided in a factory where substrate cleaning system 100 is installed is used in common by first to fourth substrate cleaning apparatuses 1A to 1D included in substrate cleaning system 100. Four exhaust systems 94 provided in each of first to fourth substrate cleaning apparatuses 1A to 1D connect exhaust facility 99 to the bottoms of four cups 61 of first to fourth substrate cleaning apparatuses 1A to 1D.

[0139] The exhaust equipment 99 exhausts the gas introduced into the exhaust equipment 99 with a constant exhaust capacity to the outside of the substrate cleaning system 100. The gas in the processing space 2S of each of the first to fourth substrate cleaning apparatuses 1A to 1D is exhausted to the outside of the substrate cleaning system 100 at one of first to third flow rates depending on the state of an exhaust amount adjustment unit 95 provided in an exhaust system 94 of the substrate cleaning apparatus 1.

[0140] (2) An example of control for a substrate cleaning system Here, the discharge amount in Figure 19 adjustment Of the processing states of the substrate W listed in the table, a state in which the substrate W is not held by either the upper holding device 10A, 10B or the suction holder 21, and a state in which the substrate W is held by the upper holding device 10A, 10B and is being subjected to a cleaning or drying process are referred to as a first processing state (see the thick dotted line frame in FIG. 19). Also, a state in which the substrate W is held by the suction holder 21 and is not being subjected to a process, and a state in which the substrate W is held by the suction holder 21 and is being subjected to a cleaning process are referred to as a second processing state (see the thick dash-dot line frame in FIG. 19). Furthermore, a state in which the substrate W is held by the suction holder 21 and is being subjected to a drying process is referred to as a third processing state (see the thick dash-dot line frame in FIG. 19).

[0141] The control device 111 of the substrate cleaning system 100 controls the operations of the first to fourth substrate cleaning apparatuses 1A to 1D so that the gas in the processing space 2S is not simultaneously discharged at the third flow rate from all of the first to fourth substrate cleaning apparatuses 1A to 1D. A specific example of the control of the first to fourth substrate cleaning apparatuses 1A to 1D in this case will be described below.

[0142] Figure 22 is a diagram for explaining an example of control of the first to fourth substrate cleaning apparatuses 1A to 1D in the substrate cleaning system 100 of Figure 21. In Figure 22, an example of control of the first to fourth substrate cleaning apparatuses 1A to 1D is shown in a time chart using a plurality of processing states of the substrate W.

[0143] 22, the operation of each part of the first substrate cleaning apparatus 1A is controlled so that the substrate W is maintained in a first processing state from time t1 to time t2, the substrate W is maintained in a second processing state from time t2 to time t3, and the substrate W is maintained in a third processing state from time t3 to time t4. Thereafter, the operations from time t1 to time t4 are repeated from time t4 onwards. The operation of each part of the second substrate cleaning apparatus 1B is controlled so that the same operations are performed at the same times as those of the first substrate cleaning apparatus 1A.

[0144] In contrast, in the third substrate cleaning apparatus 1C, the operation of each unit is controlled so that the substrate W is maintained in the first processing state from time t2 to time t3, the substrate W is maintained in the second processing state from time t3 to time t4, and the substrate W is maintained in the third processing state from time t4 to time t5. Thereafter, from time t5 onwards, the operations from time t2 to time t5 are repeated. In the fourth substrate cleaning apparatus 1D, the operation of each unit is controlled so that the same operations are performed at the same times as in the third substrate cleaning apparatus 1C.

[0145] 22, in the substrate cleaning system 100, the substrates W being processed by the first to fourth substrate cleaning apparatuses 1A to 1D are not simultaneously maintained in the third processing state. This prevents the gas from the processing space 2S from being simultaneously exhausted at the third flow rate from all of the first to fourth substrate cleaning apparatuses 1A to 1D. In this case, the level of exhaust capacity of the exhaust equipment 99 required simultaneously for multiple substrate cleaning apparatuses 1 is reduced. This makes it possible to maintain a high level of cleanliness in the processing space 2S of a larger number of substrate cleaning apparatuses 1 using exhaust equipment 99 having a predetermined exhaust capacity.

[0146] (3) Other control examples of substrate cleaning systems 22, the control device 111 of the substrate cleaning system 100 may control the operations of the first to fourth substrate cleaning apparatuses 1A to 1D so that the gas in the processing space 2S is not simultaneously discharged at at least one of the second and third flow rates for all of the first to fourth substrate cleaning apparatuses 1A to 1D. A specific example of the control of the first to fourth substrate cleaning apparatuses 1A to 1D in this case will be described below.

[0147] Figure 23 is a diagram for explaining another example of control of the first to fourth substrate cleaning apparatuses 1A to 1D in the substrate cleaning system 100 of Figure 21. Similar to the example of Figure 22, Figure 23 shows another example of control of the first to fourth substrate cleaning apparatuses 1A to 1D in the form of a time chart using a plurality of processing states of the substrate W.

[0148] 23, the operation of each unit in the first substrate cleaning apparatus 1A is controlled so that the substrate W is maintained in a first processing state from time t11 to time t12, the substrate W is maintained in a second processing state from time t12 to time t13, and the substrate W is maintained in a third processing state from time t13 to time t14. After that, from time t14 onwards, the operations from time t11 to time t14 are repeated at regular intervals (the time required for the third substrate cleaning apparatus 1C to maintain the substrate W in the second processing state). The operation of each unit in the second substrate cleaning apparatus 1B is controlled so that the same operations are performed at the same times as in the first substrate cleaning apparatus 1A.

[0149] In contrast, in the third substrate cleaning apparatus 1C, the operation of each unit is controlled so that the substrate W is maintained in the first processing state from time t13 to time t14, the substrate W is maintained in the second processing state from time t14 to time t15, and the substrate W is maintained in the third processing state from time t15 to time t16. Thereafter, from time t16 onwards, the operations from time t13 to time t16 are repeated at regular intervals (the time required to maintain the substrate W in the second processing state in the first substrate cleaning apparatus 1A). In the fourth substrate cleaning apparatus 1D, the operation of each unit is controlled so that the same operations are performed at the same times as in the third substrate cleaning apparatus 1C.

[0150] 23, the substrates W processed by the first to fourth substrate cleaning apparatuses 1A to 1D are not simultaneously maintained in at least one of the second and third processing states in the substrate cleaning system 100. This prevents the gas in the processing space 2S from being exhausted at at least one of the second and third flow rates simultaneously from all of the first to fourth substrate cleaning apparatuses 1A to 1D.

[0151] In this case, the level of exhaust capacity of the exhaust equipment 99 required simultaneously for the plurality of substrate cleaning apparatuses 1 is reduced, thereby making it possible to maintain high cleanliness in the processing spaces 2S of a greater number of substrate cleaning apparatuses 1 using exhaust equipment 99 having a predetermined exhaust capacity.

[0152] 6. Other Embodiments (1) In the above embodiment, when the damper 95b of the exhaust amount adjustment unit 95 is in the first rotation angle position, a gap is formed between the inner circumferential surface of the exhaust system 94 and the damper 95b. However, the present invention is not limited to this. When the damper 95b of the exhaust amount adjustment unit 95 is in the first rotation angle position, a gap does not have to be formed between the inner circumferential surface of the exhaust system 94 and the damper 95b. In other words, when the damper 95b is in the first rotation angle position, the damper 95b may completely block the gas flow path inside the exhaust system 94. In this case, in the substrate cleaning apparatus 1, , baseWhen the plate W is in the first processing state, the gas in the processing space 2S is not discharged to the outside of the substrate cleaning apparatus 1.

[0153] (2) In the substrate cleaning apparatus 1 according to the above embodiment, an exhaust opening (not shown) may be formed in the bottom surface 2a of the unit housing 2. In this case, even when a downward airflow of clean air is formed in the processing space 2S and no gas is exhausted from the exhaust system 94, some of the gas in the processing space 2S is exhausted to the outside of the unit housing 2 through the exhaust port opening (not shown).

[0154] (3) In the substrate cleaning apparatus 1 according to the above embodiment, the central region of the lower surface of the substrate W is sucked and held by the lower holding device 20, but the present invention is not limited to this. The substrate cleaning apparatus 1 may include a holding device that sucks and holds the central portion of the upper surface of the substrate W, instead of the lower holding device 20. In this case, the holding device that sucks and holds the central portion of the upper surface of the substrate W may be provided, for example, above the upper holding devices 10A and 10B.

[0155] (4) In the above embodiment, the substrate cleaning apparatus 1 has been described as an example of a substrate processing apparatus that performs a first process while holding the substrate W without rotating it, and a second process while holding and rotating the substrate W. Also, a substrate cleaning system 100 including a plurality of substrate cleaning apparatuses 1 has been described. Note that in the above embodiment, the cleaning process of the central region of the lower surface of the substrate W corresponds to the first process, and the cleaning process of the outer regions of the lower surface of the substrate W, Outer edge The cleaning process of the upper surface corresponds to the second process. However, the present invention is not limited to the above examples.

[0156] The substrate processing system according to the present invention is not limited to the example of the substrate cleaning apparatus 1 described above, and may also have multiple substrate processing apparatuses that perform processes other than cleaning processes on substrates W (such as coating processes, heat treatments, or film removal processes) as different first and second processes.

[0157] (5) In the above embodiment, after the central region of the underside of the substrate W is cleaned in the upper holding devices 10A, 10B, the outer region of the underside of the substrate W is cleaned in the lower holding device 20, but the embodiment is not limited to this. After the outer region of the underside of the substrate W is cleaned in the lower holding device 20, the central region of the underside of the substrate W may be cleaned in the upper holding devices 10A, 10B.

[0158] (6) In the above embodiment, substrate cleaning apparatus 1 includes control unit 9, but the embodiment is not limited to this. If substrate cleaning apparatus 1 is configured to be controllable by an external information processing device, substrate cleaning apparatus 1 does not need to include control unit 9. Also, in the above embodiment, substrate cleaning system 100 includes control unit 111, but the embodiment is not limited to this. If substrate cleaning system 100 is configured to be controllable by an external information processing device, substrate cleaning system 100 does not need to include control unit 111.

[0159] 7. Correspondence between each element of the claims and each part of the embodiment Below, examples of correspondence between each element of the claims and each element of the embodiments will be described, but the present invention is not limited to the following examples. Various other elements having the configuration or function described in the claims can also be used as each element of the claims.

[0160] In the above embodiment, the substrate W is an example of a substrate, the substrate cleaning apparatus 1 is an example of a substrate cleaning apparatus and a substrate processing apparatus, the processing space 2S is an example of a processing space, the unit housing 2 is an example of a processing chamber, the upper holding devices 10A and 10B are examples of a first substrate holding unit, and the lower holding device 20 is an example of a second substrate holding unit.

[0161] In addition, the lower surface cleaning device 50, the upper surface cleaning device 70, and the end cleaning device 80 are examples of a cleaning section and a processing section, the exhaust equipment 99 is an example of an exhaust equipment, the exhaust system 94 is an example of an exhaust system, and the exhaust volume adjustment section 95 is an example of an exhaust volume adjustment section.

[0162] Furthermore, the first flow rate in the above embodiment is an example of the first flow rate, Second Flow Rate is an example of the second flow rate, and in the above embodiment Third Flow Here is the third example of flow rate: be .

[0163] Furthermore, cup 61 is an example of a processing cup, the upper cup position is an example of a first height position, the lower cup position is an example of a second height position, cup drive unit 62 is an example of a cup drive unit, control device 111 is an example of a cleaning control unit and a processing control unit, and substrate cleaning system 100 is an example of a substrate cleaning system and a substrate processing system. 8. Reference form (1) A substrate cleaning apparatus according to a first embodiment is a substrate cleaning apparatus for cleaning a substrate, comprising: a processing chamber having a processing space capable of accommodating a substrate; a first substrate holder that holds the substrate in a horizontal position without rotating it by contacting multiple portions of the substrate; a second substrate holder that rotates the substrate around a vertical axis while holding it in a horizontal position by adsorbing the substrate; and a cleaning device that cleans the substrate held by the first substrate holder in the processing space with a cleaning liquid, and cleans the substrate held by the first substrate holder with a cleaning liquid before or after cleaning the substrate held by the first substrate holder. a cleaning unit that uses a cleaning liquid to clean the substrate held by the substrate holding unit; an exhaust system that connects the processing space to an exhaust facility provided outside the processing chamber and exhausts gas from the processing space by the exhaust facility; and an exhaust amount adjustment unit that adjusts the flow rate of gas flowing through the exhaust system so that when the substrate is held by the first substrate holding unit, the gas from the processing space is not exhausted or is exhausted at a first flow rate, and when the substrate is held by the second substrate holding unit, the gas from the processing space is exhausted at a second flow rate higher than the first flow rate. In the substrate cleaning apparatus, the first substrate holder holds the substrate in a horizontal position without rotating. The substrate is cleaned in this state. When cleaning the substrate held by the first substrate holder, the substrate does not rotate, so cleaning liquid is less likely to splash from the substrate. Therefore, even when gas is not exhausted from the processing space, the cleanliness within the processing space is maintained at a high level. Alternatively, even when gas is exhausted from the processing space at a relatively low first flow rate, the cleanliness within the processing space is maintained at a high level. In the substrate cleaning apparatus, the second substrate holder holds the substrate in a horizontal position while rotating it around a vertical axis. The substrate is cleaned in this state. When cleaning the substrate held by the second substrate holder, the substrate rotates, which makes it easy for cleaning liquid to splash from the substrate. Therefore, in the substrate cleaning apparatus, gas is exhausted from the processing space at a relatively high second flow rate. In this case, cleaning liquid splashing from the substrate is efficiently exhausted from the processing space. This prevents a decrease in the cleanliness of the processing space. According to the above configuration, the exhaust capacity of the exhaust system required for one substrate cleaning apparatus is adjusted over time. Therefore, when multiple substrate cleaning apparatuses are used with one exhaust system, the multiple substrate cleaning apparatuses can be controlled so that substrates held by the second substrate holders are not cleaned simultaneously. In this case, the level of exhaust capacity of the exhaust system required simultaneously for the multiple substrate cleaning apparatuses is reduced. This makes it possible to maintain high cleanliness in the processing spaces of a larger number of substrate cleaning apparatuses using exhaust systems with a predetermined exhaust capacity. (2) After cleaning the substrate held by the second substrate holding unit, the second substrate holding unit may rotate the substrate so that the cleaning liquid used for the cleaning is shaken off from the substrate. According to the above configuration, even when the cleaning liquid is shaken off the substrate, the gas in the processing space is discharged at the relatively high second flow rate. In this case, the cleaning liquid scattered from the substrate is efficiently discharged from the processing space. As a result, a decrease in the cleanliness in the processing space is suppressed. (3) The second flow rate may include a third flow rate and a fourth flow rate higher than the third flow rate, the second substrate holding unit may rotate the substrate held by the second substrate holding unit at a first rotational speed when cleaning the substrate, and may rotate the substrate at a second rotational speed higher than the first rotational speed when shaking off the cleaning liquid from the substrate, and the exhaust amount adjustment unit may adjust the flow rate of the gas flowing through the exhaust system so that the gas from the processing space is exhausted at the third flow rate when cleaning the substrate held by the second substrate holding unit, and so that the gas from the processing space is exhausted at the fourth flow rate when shaking off the cleaning liquid from the substrate by the second substrate holding unit. When the rotation speed of the substrate with cleaning liquid attached thereto increases, the mist of cleaning liquid scattered from the substrate tends to diffuse within the processing space. According to the above configuration, the second rotation speed of the substrate when the cleaning liquid is shaken off is higher than the first rotation speed of the substrate during cleaning. Therefore, when the cleaning liquid is shaken off the substrate, the mist of cleaning liquid tends to diffuse within the processing space. Even in this case, when the cleaning liquid is shaken off the substrate, the gas in the processing space is exhausted at a fourth flow rate that is higher than the first and third flow rates during cleaning of the substrate. Therefore, the processing space is maintained at a high level of cleanliness when the cleaning liquid is shaken off the substrate. Furthermore, with the above configuration, due to the substrate rotation speed, the amount of mist of cleaning liquid scattered into the processing space when the substrate is cleaned is smaller than the amount of mist of cleaning liquid scattered into the processing space when the substrate is shaken off and dried. As a result, even if the third flow rate of gas discharged when cleaning the substrate is lower than the fourth flow rate of gas discharged when shaking off the cleaning liquid from the substrate, sufficient gas is discharged when cleaning the substrate to maintain the cleanliness of the processing space. Therefore, excessive exhaust capacity is not required when the substrate is held by the second substrate holder. (4) The substrate cleaning apparatus may further include a processing cup that is arranged to surround the second substrate holder in a plan view, and the exhaust system may be configured to exhaust gas from the processing space through a bottom of the processing cup. In this case, the cleaning liquid splashed from the substrate held by the second substrate holder can be caught by the processing cup, and the mist of the cleaning liquid splashed in the processing cup can be smoothly discharged from the bottom of the processing cup to the outside of the processing chamber. (5) The substrate cleaning apparatus further includes a cup drive unit that supports the processing cup and moves it vertically between a first height position where the processing cup overlaps the substrate held by the second substrate holding unit in a side view and a second height position where the processing cup is lower than the substrate held by the second substrate holding unit in a side view, and the cup drive unit may support the processing cup at the first height position so as to catch cleaning liquid splashing from the substrate when the substrate is held by the second substrate holding unit, and support the processing cup at the second height position when the substrate is held by the first substrate holding unit. In this case, while the substrate is held by the second substrate holder, the cleaning liquid scattered from the substrate is prevented from diffusing in the processing space, thereby preventing a decrease in the cleanliness of the processing space. (6) A substrate cleaning system according to a second reference embodiment has a plurality of substrate cleaning apparatuses according to the first reference embodiment and a cleaning control unit, the exhaust equipment is used in common for the plurality of substrate cleaning apparatuses, and the cleaning control unit controls the operation of the plurality of substrate cleaning apparatuses so that substrates are not held by the second substrate holding units simultaneously in the plurality of substrate cleaning apparatuses. In this case, the level of exhaust capacity of the exhaust system required for multiple substrate cleaning apparatuses can be reduced, and therefore, it becomes possible to maintain high cleanliness in the processing spaces of a larger number of substrate cleaning apparatuses using exhaust systems with a predetermined exhaust capacity. (7) A substrate cleaning system according to a third reference embodiment has a plurality of substrate cleaning apparatuses according to the first reference embodiment and a cleaning control unit, wherein the exhaust equipment is used in common for the plurality of substrate cleaning apparatuses, and the cleaning control unit controls the operation of the plurality of substrate cleaning apparatuses so that cleaning liquid is not simultaneously removed from the substrates in the plurality of substrate cleaning apparatuses. In this case, the level of exhaust capacity of the exhaust system required for multiple substrate cleaning apparatuses can be reduced, and therefore, it becomes possible to maintain high cleanliness in the processing spaces of a larger number of substrate cleaning apparatuses using exhaust systems with a predetermined exhaust capacity. (8) A substrate processing system according to a fourth embodiment is a substrate processing system for performing a predetermined process on a substrate, comprising a plurality of substrate processing apparatuses and a process control unit for controlling the plurality of substrate processing apparatuses, each of which comprises a process chamber having a process space capable of accommodating a substrate, a process unit for performing a first process on the substrate in the process space and a second process on the substrate before or after the first process, an exhaust system connecting the process space to an exhaust facility provided outside the process chamber and discharging gas from the process space via the exhaust facility, and an exhaust rate adjustment unit for adjusting the flow rate of gas flowing through the exhaust system so that gas is not discharged from the process space or is discharged from the process space at a first flow rate during the first process, and so that gas is discharged from the process space at a second flow rate higher than the first flow rate during the second process, and the process control unit controls the operation of the plurality of substrate processing apparatuses so that the second process is not performed on multiple substrates simultaneously in each of the plurality of substrate processing apparatuses. In each of the above-described substrate processing apparatuses, gas is not exhausted from the processing space or is exhausted at a relatively low first flow rate during a first processing of the substrate, while gas is exhausted from the processing space at a relatively high second flow rate during a second processing of the substrate. In the plurality of substrate processing apparatuses, the second process is not performed simultaneously on the plurality of substrates. In this case, the level of exhaust capacity of the exhaust equipment required simultaneously for the plurality of substrate processing apparatuses is reduced. This makes it possible to maintain high cleanliness in the processing spaces of a greater number of substrate processing apparatuses using exhaust equipment with a predetermined exhaust capacity. (9) A substrate cleaning method according to a fifth reference embodiment is a substrate cleaning method for cleaning a substrate, the method comprising the steps of: holding the substrate in a horizontal position without rotating it using a first substrate holding part that abuts against multiple portions of the substrate in a processing space formed by a processing chamber; cleaning the substrate held by the first substrate holding part with a cleaning liquid; rotating the substrate around a vertical axis while holding it in a horizontal position using a second substrate holding part that adsorbs the substrate in the processing space; cleaning the substrate held by the second substrate holding part with a cleaning liquid; adjusting the flow rate of gas flowing through an exhaust system when the substrate is held by the first substrate holding part so that gas in the processing space is not exhausted or is exhausted to the outside of the processing chamber through an exhaust system by an exhaust equipment provided outside the processing chamber at a first flow rate; and adjusting the flow rate of gas flowing through the exhaust system when the substrate is held by the second substrate holding part so that gas in the processing space is exhausted to the outside of the processing chamber through the exhaust system by an exhaust equipment at a second flow rate higher than the first flow rate. In this substrate cleaning method, a substrate is held in a horizontal position without being rotated by a first substrate holder. The substrate is cleaned in this state. When cleaning a substrate held by the first substrate holder, the substrate does not rotate, so cleaning liquid is less likely to splash from the substrate. Therefore, even if gas is not exhausted from the processing space, a high level of cleanliness within the processing space is maintained. Alternatively, even if gas is exhausted from the processing space at a relatively low first flow rate, a high level of cleanliness within the processing space is maintained. In the substrate cleaning method, the substrate is held in a horizontal position by the second substrate holder and rotated around a vertical axis. The substrate is cleaned in this state. When cleaning the substrate held by the second substrate holder, the substrate rotates, which makes it easy for cleaning liquid to splash from the substrate. Therefore, in the substrate cleaning method, gas is exhausted from the processing space at a relatively high second flow rate. In this case, cleaning liquid splashed from the substrate is efficiently exhausted from the processing space. This prevents a decrease in cleanliness within the processing space. The processing chamber, first substrate holder, second substrate holder, and exhaust system constitute, for example, a single substrate cleaning apparatus. According to the above method, the exhaust capacity of the exhaust system required for the single substrate cleaning apparatus is adjusted over time. Therefore, when multiple substrate cleaning apparatuses are used with a single exhaust system, the multiple substrate cleaning apparatuses can be controlled so that substrates held by the second substrate holder are not cleaned simultaneously. In this case, the level of exhaust system capacity required simultaneously for the multiple substrate cleaning apparatuses is reduced. This makes it possible to maintain high cleanliness in the processing spaces of a larger number of substrate cleaning apparatuses using exhaust systems with a predetermined exhaust capacity. (10) The substrate cleaning method may further include, after cleaning the substrate held by the second substrate holder, rotating the substrate so that the cleaning liquid used for the cleaning is shaken off from the substrate. According to the above configuration, even when the cleaning liquid is shaken off the substrate, the gas in the processing space is discharged at the relatively high second flow rate. In this case, the cleaning liquid scattered from the substrate is efficiently discharged from the processing space. As a result, a decrease in the cleanliness in the processing space is suppressed. (11) The second flow rate may include a third flow rate and a fourth flow rate higher than the third flow rate, and the step of cleaning the substrate held by the second substrate holder with cleaning liquid may include rotating the substrate held by the second substrate holder at a first rotational speed during the cleaning, and the step of rotating the substrate to shake off the cleaning liquid from the substrate may include rotating the substrate held by the second substrate holder at a second rotational speed higher than the first rotational speed when shaking off the cleaning liquid from the substrate, and the step of adjusting the flow rate of the gas flowing through the exhaust system while the substrate is held by the second substrate holder may include adjusting the flow rate of the gas flowing through the exhaust system so that the gas in the processing space is exhausted at the third flow rate when the substrate held by the second substrate holder is cleaned, and adjusting the flow rate of the gas flowing through the exhaust system so that the gas in the processing space is exhausted at a fourth flow rate when shaking off the cleaning liquid from the substrate by the second substrate holder. When the rotation speed of the substrate with cleaning liquid attached thereto increases, the mist of cleaning liquid scattered from the substrate tends to diffuse within the processing space. According to the above configuration, the second rotation speed of the substrate when the cleaning liquid is shaken off is higher than the first rotation speed of the substrate during cleaning. Therefore, when the cleaning liquid is shaken off the substrate, the mist of cleaning liquid tends to diffuse within the processing space. Even in this case, when the cleaning liquid is shaken off the substrate, the gas in the processing space is exhausted at a fourth flow rate that is higher than the first and third flow rates during cleaning of the substrate. Therefore, the processing space is maintained at a high level of cleanliness when the cleaning liquid is shaken off the substrate. Furthermore, with the above configuration, due to the substrate rotation speed, the amount of mist of cleaning liquid scattered into the processing space when the substrate is cleaned is smaller than the amount of mist of cleaning liquid scattered into the processing space when the substrate is shaken off and dried. As a result, even if the third flow rate of gas discharged when cleaning the substrate is lower than the fourth flow rate of gas discharged when shaking off the cleaning liquid from the substrate, sufficient gas is discharged when cleaning the substrate to maintain the cleanliness of the processing space. Therefore, excessive exhaust capacity is not required when the substrate is held by the second substrate holder. (12) A processing cup is provided to surround the second substrate holding part in a planar view, and the step of adjusting the flow rate of gas flowing through the exhaust system when the substrate is held by the first substrate holding part and the step of adjusting the flow rate of gas flowing through the exhaust system when the substrate is held by the second substrate holding part may include exhausting gas from the bottom of the processing cup in the processing space. In this case, the cleaning liquid splashed from the substrate held by the second substrate holder can be caught by the processing cup, and the mist of the cleaning liquid splashed in the processing cup can be smoothly discharged from the bottom of the processing cup to the outside of the processing chamber. (13) The substrate cleaning method further includes a step of supporting a processing cup and moving the processing cup vertically between a first height position where the processing cup overlaps the substrate held by the second substrate holding unit in a side view and a second height position where the processing cup is lower than the substrate held by the second substrate holding unit in a side view, and the step of supporting and moving the processing cup vertically may include supporting the processing cup at the first height position so as to catch cleaning liquid splashing from the substrate when the substrate is held by the second substrate holding unit, and supporting the processing cup at the second height position when the substrate is held by the first substrate holding unit. In this case, while the substrate is held by the second substrate holder, the cleaning liquid splashed from the substrate is prevented from diffusing in the processing space, thereby preventing a decrease in the cleanliness in the processing space. (14) A substrate cleaning method according to a sixth embodiment is a substrate cleaning method for cleaning a plurality of substrates, the method including a step of controlling a plurality of substrate cleaning apparatuses, each of the plurality of substrate cleaning apparatuses including: a processing chamber having a processing space capable of accommodating a substrate; a first substrate holding unit that holds the substrate in a horizontal position without rotating it by contacting multiple portions of the substrate; a second substrate holding unit that rotates the substrate around a vertical axis while holding it in a horizontal position by adsorbing the substrate; and a cleaning unit that cleans the substrate held by the first substrate holding unit in the processing space with a cleaning liquid, and cleans the substrate held by the second substrate holding unit with the cleaning liquid before or after cleaning the substrate held by the first substrate holding unit. The apparatus includes an exhaust system that connects the processing space to an exhaust facility provided outside the processing chamber and exhausts gas from the processing space using the exhaust facility, and an exhaust rate adjustment unit that adjusts the flow rate of gas flowing through the exhaust system so that when a substrate is held by a first substrate holder, no gas is exhausted from the processing space or the gas is exhausted at a first flow rate, and when a substrate is held by a second substrate holder, the gas is exhausted from the processing space at a second flow rate higher than the first flow rate, wherein the exhaust facility is used in common by multiple substrate cleaning devices, and the step of controlling the multiple substrate cleaning devices includes controlling the operation of the multiple substrate cleaning devices so that substrates are not simultaneously held by the second substrate holders in the multiple substrate cleaning devices. This substrate cleaning method reduces the level of exhaust capacity required for the exhaust equipment for multiple substrate cleaning apparatuses simultaneously, thereby enabling the processing spaces of a larger number of substrate cleaning apparatuses to be maintained at a high level of cleanliness using exhaust equipment with a predetermined exhaust capacity. (15) A substrate cleaning method according to a seventh embodiment is a substrate cleaning method for cleaning a plurality of substrates, the method including a step of controlling a plurality of substrate cleaning apparatuses, each of the plurality of substrate cleaning apparatuses including a processing chamber having a processing space capable of accommodating a substrate, a first substrate holding part that holds the substrate in a horizontal position without rotating it by contacting multiple portions of the substrate, a second substrate holding part that rotates the substrate around a vertical axis while holding it in a horizontal position by adsorbing it to the substrate, a cleaning part that cleans the substrate held by the first substrate holding part in the processing space with a cleaning liquid, and cleans the substrate held by the second substrate holding part with the cleaning liquid before or after cleaning the substrate held by the first substrate holding part, an exhaust system that connects the processing space to an exhaust facility provided outside the processing chamber and exhausts gas from the processing space by the exhaust facility, and an exhaust system that exhausts gas from the processing space when the substrate is held by the first substrate holding part, without exhausting the gas from the processing space. and an exhaust rate adjustment unit that adjusts the flow rate of gas flowing through the exhaust system so that gas is exhausted from the processing space at a first flow rate and at a second flow rate higher than the first flow rate when the substrate is held by the second substrate holding unit, wherein after cleaning the substrate held by the second substrate holding unit, the second substrate holding unit rotates the substrate so that the cleaning liquid used for the cleaning is shaken off from the substrate, and the exhaust rate adjustment unit further adjusts the flow rate of gas flowing through the exhaust system so that gas is exhausted from the processing space at a third flow rate when the substrate held by the second substrate holding unit is cleaned, and at a fourth flow rate when the second substrate holding unit shakes off the cleaning liquid from the substrate, and the exhaust equipment is shared by the multiple substrate cleaning devices, and the step of controlling the multiple substrate cleaning devices includes controlling the operation of the multiple substrate cleaning devices so that the cleaning liquid is not shaken off from the substrates simultaneously in the multiple substrate cleaning devices. This substrate cleaning method reduces the level of exhaust capacity required for the exhaust equipment for multiple substrate cleaning apparatuses simultaneously, thereby enabling the processing spaces of a larger number of substrate cleaning apparatuses to be maintained at a high level of cleanliness using exhaust equipment with a predetermined exhaust capacity. (16) A substrate processing method according to an eighth embodiment is a substrate processing method for performing a predetermined process on a plurality of substrates, the method including a step of controlling a plurality of substrate processing apparatuses, each of the plurality of substrate processing apparatuses including a processing chamber having a processing space capable of accommodating a substrate, a processing unit that performs a first process on the substrate in the processing space and a second process on the substrate before or after the first process, an exhaust system that connects the processing space to an exhaust facility provided outside the processing chamber and exhausts gas from the processing space via the exhaust facility, and an exhaust amount adjustment unit that adjusts the flow rate of gas flowing through the exhaust system so that gas is not exhausted from the processing space or is exhausted from the processing space at a first flow rate during the first process, and so that gas is exhausted from the processing space at a second flow rate higher than the first flow rate during the second process, and the step of controlling the plurality of substrate processing apparatuses includes controlling the operation of the plurality of substrate processing apparatuses so that the second process is not performed on each of the plurality of substrates simultaneously in the plurality of substrate processing apparatuses. In each of the above-described substrate processing apparatuses, gas is not exhausted from the processing space or is exhausted at a relatively low first flow rate during a first processing of the substrate, while gas is exhausted from the processing space at a relatively high second flow rate during a second processing of the substrate. In the plurality of substrate processing apparatuses, the second process is not performed simultaneously on the plurality of substrates. In this case, the level of exhaust capacity of the exhaust equipment required simultaneously for the plurality of substrate processing apparatuses is reduced. This makes it possible to maintain high cleanliness in the processing spaces of a greater number of substrate processing apparatuses using exhaust equipment with a predetermined exhaust capacity. [Explanation of symbols]

[0164] 1...substrate cleaning apparatus, 2...unit housing, 2a...bottom surface portion, 2b to 2e...side wall portions, 2f...top surface portion, 2S...processing space, 2x...loading / unloading port, 9...control portion, 10A, 10B...upper holding device, 11A, 11B...lower chuck, 12A, 12B...upper chuck, 13A, 13B...lower chuck drive portion, 14A, 14B...upper chuck drive portion, 20...lower holding device, 21...suction holding portion, 22...suction holding drive portion, 30...pedestal device, 31...linear guide , 32... Movable base, 33... Base drive unit, 40... Delivery device, 41... Support pin, 42... Pin connecting member, 43... Pin lifting drive unit, 50... Underside cleaning device, 51... Underside brush, 52... Liquid nozzle, 53... Gas ejection unit, 54... Lifting support unit, 54u... Upper surface, 55... Movement support unit, 55a... Underside brush rotation drive unit, 55b... Underside brush lifting drive unit, 55c... Underside brush movement drive unit, 56... Underside cleaning liquid supply unit, 57... Jet gas supply unit, 60... Cup Cup device, 61...cup, 62...cup drive unit, 70...upper surface cleaning device, 71, 81...rotating support shaft, 72, 82...arm, 73...spray nozzle, 74...upper surface cleaning drive unit, 75...upper surface cleaning fluid supply unit, 80...edge cleaning device, 83...bevel brush, 84...bevel brush drive unit, 90...opening / closing device, 91...shutter, 92...shutter drive unit, 93...gas supply duct, 93a...gas discharge port, 94...exhaust system, 95...exhaust amount adjustment unit, 95a ...rotating shaft, 95b...damper, 95c...actuator, 98...gas supply device, 99...exhaust equipment, 100...substrate cleaning system, 110...indexer block, 111...controller, 120...processing block, 140...carrier placement table, 150...transport unit, 161...cleaning unit, 162...transport unit, C...carrier, IR...indexer robot, mr...main robot, PASS...substrate placement unit, RH...hand, rp...plane reference position, W...substrate

Claims

1. A substrate cleaning apparatus for cleaning a substrate, comprising: a processing chamber having a processing space capable of accommodating a substrate; a first substrate holder that holds the substrate in a horizontal position without rotating it by contacting multiple portions of the substrate; a second substrate holder that holds the substrate in a horizontal position by adsorbing the substrate and rotates the substrate around an axis extending in the vertical direction; a cleaning unit that, in the processing space, cleans the substrate held by the first substrate holding unit with a cleaning liquid, and cleans the substrate held by the second substrate holding unit with the cleaning liquid before or after cleaning the substrate held by the first substrate holding unit; an exhaust system that connects the processing space with an exhaust facility provided outside the processing chamber and exhausts gas from the processing space through the exhaust facility; and an exhaust amount adjustment unit that adjusts the flow rate of gas flowing through the exhaust system so that, when a substrate is held by the first substrate holding unit and the held substrate is being cleaned with a cleaning liquid, gas from the processing space is not exhausted or is exhausted at a first flow rate, and, when a substrate is held by the second substrate holding unit and the held substrate is being cleaned with a cleaning liquid, gas from the processing space is exhausted at a second flow rate that is higher than the first flow rate.

2. 2. The substrate cleaning apparatus according to claim 1, wherein, after cleaning the substrate held by the second substrate holding unit, the second substrate holding unit rotates the substrate so that the cleaning liquid used for cleaning is shaken off from the substrate.

3. The second substrate holding unit rotates the substrate held by the second substrate holding unit at a first rotation speed when cleaning the substrate, and rotates the substrate at a second rotation speed higher than the first rotation speed when shaking off the cleaning solution from the substrate; 3. The substrate cleaning apparatus of claim 2, wherein the exhaust volume adjustment unit adjusts the flow rate of the gas flowing through the exhaust system so that the gas in the processing space is exhausted at a third flow rate higher than the second flow rate when the second substrate holder shakes off the cleaning liquid from the substrate.

4. a processing cup provided to surround the second substrate holding part in a plan view; 4. The substrate cleaning apparatus according to claim 1, wherein the exhaust system is configured to exhaust gas from the processing space through a bottom of the processing cup.

5. a cup driving unit that supports the processing cup and moves the processing cup in a vertical direction between a first height position where the processing cup overlaps the substrate held by the second substrate holding unit in a side view and a second height position where the processing cup is lower than the substrate held by the second substrate holding unit in a side view, 5. The substrate cleaning apparatus of claim 4, wherein the cup drive unit supports the processing cup at the first height position so as to receive cleaning liquid splashed from the substrate when the substrate is held by the second substrate holding unit, and supports the processing cup at the second height position when the substrate is held by the first substrate holding unit.

6. A method for cleaning a substrate, comprising: the exhaust facility is commonly used by the plurality of substrate cleaning apparatuses; The cleaning control unit controls operations of the plurality of substrate cleaning apparatuses so that substrates are not held by the second substrate holding units simultaneously in the plurality of substrate cleaning apparatuses.

7. A method for cleaning a substrate, comprising: the exhaust facility is commonly used by the plurality of substrate cleaning apparatuses; The cleaning control unit controls operations of the plurality of substrate cleaning devices so that cleaning liquid is not simultaneously shaken off from the substrates in the plurality of substrate cleaning devices.

8. A substrate processing system for performing a predetermined process on a substrate, a plurality of substrate processing apparatuses; a processing control unit that controls the plurality of substrate processing apparatuses, Each of the plurality of substrate processing apparatuses includes: a processing chamber having a processing space capable of accommodating a substrate; a first substrate holder that holds the substrate in a horizontal position without rotating it by contacting multiple portions of the substrate; a second substrate holder that holds the substrate in a horizontal position by adsorbing the substrate and rotates the substrate around an axis extending in the vertical direction; a processing section that performs a first process on a substrate in the processing space and a second process on the substrate before or after the first process; an exhaust system that connects the processing space with an exhaust facility provided outside the processing chamber and exhausts gas from the processing space through the exhaust facility; an exhaust amount adjusting unit that adjusts the flow rate of gas flowing through the exhaust system so that the gas in the processing space is not exhausted or is exhausted at a first flow rate during the first processing, and the gas in the processing space is exhausted at a second flow rate higher than the first flow rate during the second processing, the exhaust facility is used in common by the plurality of substrate processing apparatuses, the process control unit controls operations of the plurality of substrate processing apparatuses so that the second process is not simultaneously performed on each of the plurality of substrates in the plurality of substrate processing apparatuses; the first process is cleaning the substrate held by the first substrate holder with a cleaning liquid without rotating the substrate; The second process is cleaning the substrate held by the second substrate holder with a cleaning liquid while rotating the substrate.

9. A substrate cleaning method for cleaning a substrate, comprising: holding the substrate in a horizontal position without rotating it using a first substrate holder that contacts multiple portions of the substrate in a processing space formed by a processing chamber; cleaning the substrate held by the first substrate holder with a cleaning liquid; In the processing space, a second substrate holder that adsorbs the substrate is used to hold the substrate in a horizontal position while rotating the substrate around an axis extending in a vertical direction; cleaning the substrate held by the second substrate holder with a cleaning liquid; adjusting a flow rate of gas flowing through the exhaust system while the substrate is held by the first substrate holder and the held substrate is cleaned with a cleaning liquid, so that the gas in the processing space is not exhausted or is exhausted to the outside of the processing chamber through an exhaust system by an exhaust facility provided outside the processing chamber at a first flow rate; and adjusting a flow rate of gas flowing through the exhaust system while the substrate is held by the second substrate holder and the held substrate is cleaned with a cleaning liquid, so that the gas in the processing space is exhausted to the outside of the processing chamber through the exhaust system by the exhaust equipment at a second flow rate higher than the first flow rate.

10. 10. The substrate cleaning method according to claim 9, further comprising the step of rotating the substrate held by the second substrate holder after cleaning the substrate so that the cleaning liquid used for cleaning is shaken off from the substrate.

11. The step of cleaning the substrate held by the second substrate holding unit with a cleaning liquid includes rotating the substrate held by the second substrate holding unit at a first rotation speed during the cleaning; the step of rotating the substrate to shake off the cleaning liquid from the substrate includes rotating the substrate held by the second substrate holding part at a second rotation speed higher than the first rotation speed when shaking off the cleaning liquid from the substrate; The substrate cleaning method includes:

11. The substrate cleaning method according to claim 10, further comprising the step of adjusting a flow rate of gas flowing through the exhaust system so that gas in the processing space is exhausted at a third flow rate higher than the second flow rate when the second substrate holder shakes off the cleaning liquid from the substrate.

12. a processing cup is provided to surround the second substrate holding part in a plan view; 12. The substrate cleaning method according to claim 9, wherein the step of adjusting a flow rate of gas flowing through the exhaust system when a substrate is held by the first substrate holding unit and the held substrate is being cleaned with a cleaning liquid and the step of adjusting a flow rate of gas flowing through the exhaust system when a substrate is held by the second substrate holding unit and the held substrate is being cleaned with a cleaning liquid comprise exhausting gas from a bottom of the processing cup.

13. a step of supporting the processing cup and moving the processing cup in a vertical direction between a first height position where the processing cup overlaps the substrate held by the second substrate holding unit in a side view and a second height position where the processing cup is lower than the substrate held by the second substrate holding unit in a side view, The step of supporting and moving the processing cup in an up-down direction includes:

13. The substrate cleaning method of claim 12, further comprising supporting the processing cup at the first height position so as to receive cleaning liquid splashed from the substrate when the substrate is held by the second substrate holding part, and supporting the processing cup at the second height position when the substrate is held by the first substrate holding part.

14. 1. A substrate cleaning method for cleaning a plurality of substrates, comprising: controlling a plurality of substrate cleaning apparatuses; Each of the plurality of substrate cleaning apparatuses includes: a processing chamber having a processing space capable of accommodating a substrate; a first substrate holder that holds the substrate in a horizontal position without rotating it by contacting multiple portions of the substrate; a second substrate holder that holds the substrate in a horizontal position by adsorbing the substrate and rotates the substrate around an axis extending in the vertical direction; a cleaning unit that, in the processing space, cleans the substrate held by the first substrate holding unit with a cleaning liquid, and cleans the substrate held by the second substrate holding unit with the cleaning liquid before or after cleaning the substrate held by the first substrate holding unit; an exhaust system that connects the processing space with an exhaust facility provided outside the processing chamber and exhausts gas from the processing space through the exhaust facility; an exhaust amount adjusting unit that adjusts the flow rate of gas flowing through the exhaust system, the exhaust facility is commonly used by the plurality of substrate cleaning apparatuses; The step of controlling the plurality of substrate cleaning apparatuses includes: controlling the exhaust amount adjustment unit of each substrate cleaning apparatus so that, when a substrate is held by the first substrate holding unit and the held substrate is cleaned with a cleaning liquid, gas is not exhausted from the processing space or the gas is exhausted at a first flow rate, and when a substrate is held by the second substrate holding unit and the held substrate is cleaned with a cleaning liquid, the gas is exhausted from the processing space at a second flow rate higher than the first flow rate; controlling operations of the plurality of substrate cleaning apparatuses so that substrates are not held by the second substrate holders simultaneously in the plurality of substrate cleaning apparatuses.

15. 1. A substrate cleaning method for cleaning a plurality of substrates, comprising: controlling a plurality of substrate cleaning apparatuses; Each of the plurality of substrate cleaning apparatuses includes: a processing chamber having a processing space capable of accommodating a substrate; a first substrate holder that holds the substrate in a horizontal position without rotating it by contacting multiple portions of the substrate; a second substrate holder that holds the substrate in a horizontal position by adsorbing the substrate and rotates the substrate around an axis extending in the vertical direction; a cleaning unit that, in the processing space, cleans the substrate held by the first substrate holding unit with a cleaning liquid, and cleans the substrate held by the second substrate holding unit with the cleaning liquid before or after cleaning the substrate held by the first substrate holding unit; an exhaust system that connects the processing space with an exhaust facility provided outside the processing chamber and exhausts gas from the processing space through the exhaust facility; an exhaust amount adjusting unit that adjusts the flow rate of gas flowing through the exhaust system, the second substrate holding unit rotates the substrate held by the second substrate holding unit after cleaning the substrate so that the cleaning liquid used for the cleaning is shaken off from the substrate; the exhaust facility is commonly used by the plurality of substrate cleaning apparatuses; The step of controlling the plurality of substrate cleaning apparatuses includes: controlling the exhaust amount adjustment unit of each substrate cleaning apparatus so that, when a substrate is held by the first substrate holding unit and the held substrate is cleaned with a cleaning liquid, gas is not exhausted from the processing space or the gas is exhausted at a first flow rate, and when a substrate is held by the second substrate holding unit and the held substrate is cleaned with a cleaning liquid, the gas is exhausted from the processing space at a second flow rate higher than the first flow rate; controlling the exhaust rate adjusting unit of each substrate cleaning apparatus so that gas is exhausted from the processing space at a third flow rate higher than the second flow rate when the second substrate holding unit shakes off the cleaning liquid from the substrate; a control unit for controlling operations of the plurality of substrate cleaning apparatuses so that cleaning liquid is not simultaneously shaken off from the substrates in the plurality of substrate cleaning apparatuses.

16. A substrate processing method for performing a predetermined process on a plurality of substrates, comprising: controlling a plurality of substrate processing apparatus; Each of the plurality of substrate processing apparatuses includes: a processing chamber having a processing space capable of accommodating a substrate; a first substrate holder that holds the substrate in a horizontal position without rotating it by contacting multiple portions of the substrate; a second substrate holder that holds the substrate in a horizontal position by adsorbing the substrate and rotates the substrate around an axis extending in the vertical direction; a processing section that performs a first process on a substrate in the processing space and a second process on the substrate before or after the first process; an exhaust system that connects the processing space with an exhaust facility provided outside the processing chamber and exhausts gas from the processing space through the exhaust facility; an exhaust amount adjusting unit that adjusts the flow rate of gas flowing through the exhaust system, the exhaust facility is used in common by the plurality of substrate processing apparatuses, The step of controlling the plurality of substrate processing apparatuses includes: controlling the exhaust amount adjusting unit of each substrate processing apparatus so that, in the first processing, the gas in the processing space is not exhausted or is exhausted at a first flow rate, and, in the second processing, the gas in the processing space is exhausted at a second flow rate higher than the first flow rate; controlling operations of the plurality of substrate processing apparatuses so that the second processing is not simultaneously performed on a plurality of substrates in the plurality of substrate processing apparatuses; the first process is cleaning the substrate held by the first substrate holder with a cleaning liquid without rotating the substrate; The second process is cleaning the substrate held by the second substrate holder with a cleaning liquid while rotating the substrate.

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