Substrate Processing Equipment

Abstract

To suppress failure generated in a connection part of a plasma reactor.SOLUTION: A substrate processing apparatus comprises a substrate holding part and a plasma reactor 1. The substrate holding part holds a substrate. The plasma reactor 1 irradiates a main surface of the substrate with plasma. The plasma reactor 1 comprises: at least one of electrodes 111 and 121; at least one of dielectric bodies 13 and 14; wirings 16A and 16B connected to a power supply 16 for the plasma; a holding member 20; and a seal member 30. The electrodes 111 and 121 are arranged in a plasma space H2. The dielectric bodies 13 and 14 cover the electrodes 111 and 121. The holding member 20 includes a housing space H1 housing connection parts C1 and C2 that connect end parts of the electrodes 111 and 121 and the wirings 16A and 16B. The seal member 30 includes at least one of penetration holes 35b and 36b through which the electrodes 111 and 121 penetrate, and is attached to the holding member 20, to separate the housing space H1 and the plasma space H2.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] Conventionally, dry processing units that irradiate a substrate with plasma have been proposed (for example, Patent Document 1). In Patent Document 1, the dry processing unit includes a pipe for supplying a processing gas to a chamber and a plasma generator that converts the processing gas into plasma. The plasma generator includes an upper electrode provided above the substrate transferred into the chamber and a lower electrode provided below the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-010015 Summary of the Invention [Problem to be solved by the invention]

[0004] Each electrode is electrically connected to a power source via wiring. If the connection between each electrode and the end of the wiring is exposed to plasma, the connection may be sputtered. Furthermore, when an acidic processing solution is supplied to the substrate, the processing solution atmosphere may act on the connection, which may corrode the connection.

[0005] Therefore, an object of the present invention is to provide a substrate processing apparatus that can suppress problems that occur at the connection portion of the plasma reactor. [Means for solving the problem]

[0006] A first aspect of the substrate processing apparatus includes a substrate holding unit that holds a substrate, and a plasma reactor that irradiates plasma onto a main surface of the substrate held by the substrate holding unit, wherein the plasma reactor has a storage space that stores at least one electrode arranged in a plasma space, at least one dielectric that covers the electrode, wiring connected to a plasma power source, and a connection portion that connects the end of the electrode exposed from the dielectric to the wiring, and includes a holding member that holds the electrode and the dielectric, and a sealing member that has at least one through hole through which the electrode passes and is attached to the holding member to shield the storage space from the plasma space.

[0007] A second aspect of the substrate processing apparatus is the substrate processing apparatus according to the first aspect, wherein the at least one electrode includes a plurality of first linear electrodes extending in a longitudinal direction and a plurality of second linear electrodes arranged parallel to the plurality of first linear electrodes, the at least one dielectric includes a plurality of first dielectrics covering portions of the plurality of first linear electrodes other than base ends on one side in the longitudinal direction, and a plurality of second dielectrics covering portions of the plurality of second linear electrodes other than base ends on the other side in the longitudinal direction, and the connection portion is The sealing member includes a first assembly electrode that connects the base end portion to an end of the first wiring, which is the wiring, and a second assembly electrode that connects the base end portions of the plurality of second linear electrodes to an end portion of the second wiring, which is the wiring; the sealing member has a ring shape that is located inside the first assembly electrode and the second assembly electrode; and the at least one through hole formed in the sealing member includes a plurality of first base end holes through which the base ends of the plurality of first dielectrics each pass, and a second base end hole through which the base ends of the plurality of second dielectrics each pass.

[0008] A third aspect of the substrate processing apparatus is a substrate processing apparatus according to the second aspect, wherein the at least one through hole further includes a plurality of first tip holes through which the tip portions of the plurality of first dielectrics respectively pass, and a plurality of second tip holes through which the tip portions of the plurality of second dielectrics respectively pass.

[0009] A fourth aspect of the substrate processing apparatus is a substrate processing apparatus according to the second or third aspect, further comprising a plate-shaped partition member provided inside the sealing member, wherein the first linear electrode and the plurality of first dielectrics are provided on one side of the partition member, the second linear electrode and the plurality of second dielectrics are provided on the other side of the partition member, the sealing member surrounds a side surface of the partition member, and the inner surface of the sealing member includes a protrusion protruding toward the side surface of the partition member.

[0010] A fifth aspect of the substrate processing apparatus is a substrate processing apparatus according to any one of the second to fourth aspects, wherein the tips of the plurality of first linear electrodes and the tips of the plurality of second linear electrodes are positioned inside the sealing member.

[0011] A sixth aspect of the substrate processing apparatus is a substrate processing apparatus according to any one of the first to fifth aspects, wherein the sealing member includes a main body portion and an end portion provided at the end of the main body portion and wider than the main body portion, and the holding member has a groove into which the end portion of the sealing member is inserted.

[0012] A seventh aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the first to sixth aspects, further comprising a gas supply unit that supplies gas to the storage space.

[0013] An eighth aspect of the substrate processing apparatus is a substrate processing apparatus according to the seventh aspect, wherein the holding member has a wiring passage formed therein that is connected to the storage space and through which the wiring is routed, and the gas supply unit supplies the gas through the wiring passage.

[0014] A ninth aspect of the substrate processing apparatus is the substrate processing apparatus according to the seventh or eighth aspect, further comprising a gas exhaust unit that exhausts gas from the storage space.

[0015] A tenth aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the first to ninth aspects, further comprising a cooling unit that cools the plasma reactor.

[0016] An eleventh aspect of the substrate processing apparatus is a substrate processing apparatus according to the tenth aspect, wherein the cooling section is located on the opposite side of the plasma reactor from the substrate holding section and has at least one air inlet for flowing cooling gas toward the plasma reactor.

[0017] A twelfth aspect of the substrate processing apparatus is a substrate processing apparatus according to the eleventh aspect, wherein the cooling section is located on the opposite side of the plasma reactor from the substrate holding section and has an exhaust port that opens toward the plasma reactor.

[0018] A thirteenth aspect of the substrate processing apparatus is a substrate processing apparatus according to the twelfth aspect, wherein the at least one air inlet and the exhaust outlet are formed only within a circular area that is half the diameter of the substrate when viewed in a plane. [Effects of the Invention]

[0019] According to the first aspect of the substrate processing apparatus, it is possible to prevent plasma from flowing from the plasma space into the storage space, thereby preventing problems at the connection portion caused by plasma.

[0020] According to the second aspect of the substrate processing apparatus, the connection part is located radially outward of the ring-shaped seal member, so that the seal member can more reliably shield the storage space in which the connection part is stored from the plasma space radially inward of the seal member.

[0021] According to the third aspect of the substrate processing apparatus, when the first linear electrode passes through the first distal end hole and the first proximal end hole of the seal member and the second linear electrode passes through the second distal end hole and the second proximal end hole of the seal member, both ends of the first linear electrode and the second linear electrode are held by the seal member. This makes it easy to handle the first linear electrode, the second linear electrode, and the seal member as a unit, and simplifies assembly of the plasma reactor.

[0022] According to the fourth aspect of the substrate processing apparatus, the gap between the side surface of the partition member and the sealing member can be reduced. Therefore, the atmosphere between the partition member and the substrate is less likely to flow vertically upward from the partition member. Therefore, the atmosphere can be prevented from acting on the components vertically above the partition member.

[0023] According to the fifth aspect of the substrate processing apparatus, it is possible to prevent plasma from being generated in the storage space.

[0024] According to the sixth aspect of the substrate processing apparatus, the adhesion between the seal member and the holding member can be improved.

[0025] According to the seventh aspect of the substrate processing apparatus, the pressure in the storage space can be increased, so that the inflow of plasma from the plasma space into the storage space can be further suppressed.

[0026] According to the eighth aspect of the substrate processing apparatus, the wiring passages can be utilized as gas passages, thereby reducing manufacturing costs compared to when both wiring and gas passages are formed in the holding member.

[0027] According to the ninth aspect of the substrate processing apparatus, since the gas can be discharged from the storage space while the gas is being supplied to the storage space, the atmosphere in the storage space can be kept cleaner.

[0028] According to the tenth aspect of the substrate processing apparatus, the temperature rise of the plasma reactor can be suppressed, and therefore, for example, thermal deterioration of the holding member of the plasma reactor can be suppressed.

[0029] According to the eleventh aspect of the substrate processing apparatus, the plasma reactor can be air-cooled.

[0030] According to the twelfth aspect of the substrate processing apparatus, the amount of cooling gas flowing out between the plasma reactor and the substrate can be reduced.

[0031] According to the thirteenth aspect of the substrate processing apparatus, the central portion of the plasma reactor can be cooled more than the peripheral portion. If cooling by the cooling unit is not performed, the temperature of the peripheral portion of the plasma reactor tends to be lower than that of the central portion, so the cooling unit can make the temperature distribution of the plasma reactor more uniform. [Brief explanation of the drawings]

[0032] [Figure 1] FIG. 1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus. [Figure 2] FIG. 2 is a block diagram schematically illustrating an example of the internal configuration of a control unit. [Figure 3] FIG. 2 is a diagram schematically illustrating an example of the configuration of a processing unit. [Figure 4] FIG. 2 is a plan view schematically showing an example of the configuration of an electrode assembly. [Figure 5] 1 is a cross-sectional view schematically showing an example of the configuration of a plasma reactor. [Figure 6] FIG. 2 is an exploded cross-sectional view showing the electrode assembly and the holding member separated from each other. [Figure 7] FIG. 4 is a plan view schematically showing an example of the configuration of a second member of the holding member. [Figure 8] FIG. 6 is a cross-sectional view schematically showing the AA cross section of the plasma reactor in FIG. 5. [Figure 9] FIG. 6 is a cross-sectional view schematically showing the BB cross section of the plasma reactor in FIG. 5. [Figure 10] FIG. 2 is a plan view schematically illustrating an example of an electrode assembly and a sealing member. [Figure 11] FIG. 2 is a cross-sectional view schematically illustrating an example of the configuration of a sealing member. [Figure 12] FIG. 10 is a cross-sectional view schematically showing the configuration of a modified example of a plasma reactor. DETAILED DESCRIPTION OF THE INVENTION

[0033] Hereinafter, embodiments will be described with reference to the accompanying drawings. Note that the components described in the embodiments are merely examples and are not intended to limit the scope of the present disclosure. In the drawings, the dimensions or number of each part may be exaggerated or simplified as necessary for ease of understanding.

[0034] Unless otherwise specified, expressions indicating relative or absolute positional relationships (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.) not only indicate that positional relationship exactly, but also indicate a state where there is a relative displacement in terms of angle or distance within a range where tolerance or equivalent functionality is obtained. Expressions indicating an equal state (e.g., "identical," "equal," "homogeneous," etc.) not only indicate a state where there is strict quantitative equality, but also indicate a state where there is a difference where tolerance or equivalent functionality is obtained, unless otherwise specified. Expressions indicating shape (e.g., "square shape" or "cylindrical shape") not only indicate that shape strictly geometrically, but also indicate a shape with, for example, concaves and convexes or chamfers within a range where equivalent effects are obtained, unless otherwise specified. The expressions "comprise," "include," "have," "includes," "includes," or "have" of one component are not exclusive expressions that exclude the presence of other components. The expression "at least one of A, B, and C" includes A only, B only, C only, any two of A, B, and C, and all of A, B, and C.

[0035] <Overall configuration of substrate processing equipment> 1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus 100. The substrate processing apparatus 100 is a single-wafer processing apparatus that processes substrates W to be processed one by one.

[0036] The substrate W is, for example, a semiconductor substrate having a disk shape. In addition to semiconductor substrates, various substrates can be used for the substrate W, such as glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks. The shape of the substrate is not limited to a disk shape, and various other shapes, such as a rectangular plate shape, can also be used.

[0037] The substrate processing apparatus 100 includes a load port 101 , an indexer robot 110 , a main transport robot 120 , a plurality of processing units 130 , and a control unit 90 .

[0038] The multiple load ports 101 are arranged side by side in one horizontal direction. Each load port 101 is an interface unit for loading and unloading substrates W into and from the substrate processing apparatus 100. A carrier C, which is a substrate container for accommodating substrates W, is loaded into each load port 101 from outside. Each load port 101 holds the loaded carrier C.

[0039] The indexer robot 110 is a transport robot that transports substrates W between the carriers C held in each load port 101 and the main transport robot 120. The indexer robot 110 is movable along the direction in which the load ports 101 are arranged, and can stop at a position facing each carrier C. The indexer robot 110 can perform the operation of removing substrates W from each carrier C and the operation of transferring substrates W to each carrier C.

[0040] The main transport robot 120 is a transport robot that transports substrates W between the indexer robot 110 and each processing unit 130. The main transport robot 120 can receive substrates W from the indexer robot 110 and deliver substrates W to the indexer robot 110. The main transport robot 120 can also carry substrates W into each processing unit 130 and carry substrates W out of each processing unit 130.

[0041] The substrate processing apparatus 100 is provided with, for example, 12 processing units 130. Specifically, four towers, each of which has three processing units 130 stacked vertically, are provided to surround the main transport robot 120. In FIG. 1, one of the processing units 130 stacked in three tiers is shown schematically. The number of processing units 130 in the substrate processing apparatus 100 is not limited to 12 and may be changed as appropriate.

[0042] The main transport robot 120 is surrounded by four towers. The main transport robot 120 carries unprocessed substrates W received from the indexer robot 110 into each processing unit 130. Each processing unit 130 processes the substrate W. The main transport robot 120 also carries out processed substrates W from each processing unit 130 and hands them over to the indexer robot 110.

[0043] The control unit 90 controls the operation of each component of the substrate processing apparatus 100. FIG. 2 is a functional block diagram schematically illustrating an example of the internal configuration of the control unit 90. The control unit 90 is an electronic circuit and includes, for example, a data processing unit 91 and a storage unit 92. In the specific example of FIG. 2, the data processing unit 91 and the storage unit 92 are connected to each other via a bus 93. The data processing unit 91 may be, for example, an arithmetic processing device such as a CPU (Central Processor Unit). The storage unit 92 may include a non-transitory storage unit (e.g., a ROM (Read Only Memory) or a hard disk) 921 and a temporary storage unit (e.g., a RAM (Random Access Memory)) 922. The non-transitory storage unit 921 may store, for example, a program that defines the processing to be performed by the control unit 90. The data processing unit 91 executes this program, allowing the control unit 90 to perform the processing defined in the program. Of course, some or all of the processing performed by the control unit 90 may be performed by hardware.

[0044] The control unit 90 may include a main control unit and multiple local control units. The main control unit controls the entire substrate processing apparatus 100, and a local control unit is provided for each processing unit 130. The local control units are capable of communicating with the main control unit and control the processing units 130 based on instructions from the main control unit. Each of the main control unit and the local control units includes a data processing unit 91 and a storage unit 92, for example, as in FIG. 2 .

[0045] <Processing unit> Fig. 3 is a diagram schematically illustrating an example of the configuration of the processing unit 130. It is not necessary that all processing units 130 belonging to the substrate processing apparatus 100 have the configuration shown in Fig. 3, but it is sufficient that at least one processing unit 130 has the configuration.

[0046] The processing unit 130 illustrated in FIG. 3 is an apparatus that performs plasma processing on a substrate W. The substrate W is, for example, a semiconductor substrate and has a disk shape. The size of the substrate W is not particularly limited, but its diameter is, for example, approximately 300 mm. The processing using plasma does not need to be particularly limited, but a more specific example includes an organic matter removal process. The organic matter removal process is a process for removing organic matter on the main surface of the substrate W, and the organic matter can be resist. When the organic matter is resist, the organic matter removal process can also be said to be a resist removal process.

[0047] The processing unit 130 includes a plasma reactor 1 and a substrate holder 6. In the example of Figure 3, the processing unit 130 also includes a chamber 80. The chamber 80 forms a processing chamber for processing the substrate W and houses various components described below.

[0048] The substrate holding unit 6 is provided in the chamber 80 and holds the substrate W in a horizontal position. The horizontal position here means that the thickness direction of the substrate W is aligned with the vertical direction. In the example of FIG. 3, the substrate holding unit 6 includes a spin base 61 and a plurality of chuck pins 62. The spin base 61 has a disk shape and is provided vertically below the substrate W. The spin base 61 is provided with its thickness direction aligned with the vertical direction. The plurality of chuck pins 62 are provided upright on the upper surface of the spin base 61 and grip the peripheral edge of the substrate W. Note that the substrate holding unit 6 does not necessarily have to have the chuck pins 62. For example, the substrate holding unit 6 may hold the substrate W by suctioning the underside of the substrate W.

[0049] In the example of FIG. 3, the substrate holder 6 further includes a rotation mechanism 63, which rotates the substrate W around a rotation axis Q1. The rotation axis Q1 is an axis that passes through the center of the substrate W and is aligned in the vertical direction. The rotation mechanism 63 includes, for example, a shaft 64 and a motor 65. The upper end of the shaft 64 is connected to the lower surface of the spin base 61. The motor 65 rotates the shaft 64 around the rotation axis Q1, thereby rotating the spin base 61. As a result, the substrate W held by the multiple chuck pins 62 rotates around the rotation axis Q1. Such a substrate holder 6 may also be called a spin chuck. Note that, hereinafter, the radial direction about the rotation axis Q1 will simply be referred to as the radial direction.

[0050] In the example of FIG. 3, the processing unit 130 also includes a nozzle 4. The nozzle 4 is provided in the chamber 80 and is used to supply a processing liquid to the substrate W. The nozzle 4 is connected to a processing liquid supply source 44 via a supply pipe 41. The processing liquid supply source 44 includes, for example, a tank (not shown) that stores the processing liquid. The processing liquid includes, for example, at least one chemical solution selected from the group consisting of sulfuric acid, sulfate, peroxosulfuric acid, and peroxosulfate. A valve 42 is provided in the supply pipe 41. When the valve 42 is opened, the processing liquid from the processing liquid supply source 44 is supplied to the nozzle 4 through the supply pipe 41 and is ejected from the ejection port 4a of the nozzle 4.

[0051] In the example of FIG. 3, the nozzle 4 is provided so as to be movable by a nozzle moving mechanism 45. The nozzle moving mechanism 45 moves the nozzle 4 between a nozzle processing position and a nozzle standby position. The nozzle processing position is a position where the nozzle 4 ejects a processing liquid toward a main surface (e.g., an upper surface) of the substrate W. The nozzle processing position is, for example, a position vertically above the substrate W and facing the center of the substrate W in the vertical direction. The nozzle standby position is, for example, a position radially outward from the periphery of the substrate W. FIG. 3 shows the nozzle 4 stopped at the nozzle standby position.

[0052] When the valve 42 is opened while the nozzle 4 is positioned at the nozzle processing position, the processing liquid is discharged from the nozzle 4 toward the upper surface of the substrate W. When the substrate holder 6 rotates the substrate W, the processing liquid spreads over the upper surface of the substrate W due to centrifugal force and splashes outward from the periphery of the substrate W. As a result, a liquid film of the processing liquid is formed on the upper surface of the substrate W.

[0053] 3, the processing unit 130 also includes a guard 7. The guard 7 is provided in the chamber 80 and has a cylindrical shape for surrounding the substrate holder 6 and the substrate W held by the substrate holder 6. The guard 7 can catch the processing liquid splashed from the periphery of the substrate W.

[0054] The plasma reactor 1 is a plasma generating device that generates plasma. The plasma reactor 1 is installed in a chamber 80 at a position vertically facing the main surface (here, the upper surface) of the substrate W held by a substrate holder 6. The plasma reactor 1 includes an electrode assembly 10 and a holding member 20. The holding member 20 holds the electrode assembly 10. The electrode assembly 10 is connected to a plasma power supply 16, and receives power from the power supply 16 to convert the surrounding gas into plasma. Note that, as an example, the plasma reactor 1 generates plasma under atmospheric pressure. Here, atmospheric pressure refers to, for example, a pressure that is 80% or more and 120% or less of standard atmospheric pressure.

[0055] In the example of FIG. 3, the plasma reactor 1 is a flat-type plasma reactor having a flat shape. The plasma reactor 1 is provided so that it can be raised and lowered by a plasma lifting mechanism 15. The plasma lifting mechanism 15 raises and lowers the plasma reactor 1 between a plasma processing position and a plasma standby position. The plasma processing position is a position where the substrate W is processed using plasma from the plasma reactor 1. At the plasma processing position, the distance between the plasma reactor 1 and the upper surface of the substrate W is, for example, about several mm (specifically, about 1.5 mm to 3.5 mm). The plasma standby position is a position where the substrate W is not processed using plasma, and is a position vertically above the plasma processing position. FIG. 3 shows the plasma reactor 1 stopped at the plasma standby position. The plasma lifting mechanism 15 may include, for example, a ball screw mechanism and a motor that provides a driving force to the ball screw mechanism, or may include an air cylinder.

[0056] The plasma reactor 1 can move from the plasma standby position to the plasma processing position with the nozzle 4 positioned at the nozzle standby position. The plasma reactor 1 moves to the plasma processing position, for example, with a liquid film of the processing liquid formed on the upper surface of the substrate W. That is, the nozzle 4 ejects the processing liquid onto the upper surface of the substrate W at the nozzle processing position, and the substrate holder 6 rotates the substrate W to form a liquid film on the upper surface of the substrate W, after which the nozzle 4 moves to the nozzle standby position, and then the plasma reactor 1 moves from the plasma standby position to the plasma processing position.

[0057] The plasma reactor 1 irradiates the upper surface of the substrate W with plasma. When the plasma reactor 1 generates plasma, various active species are generated. For example, when air is converted into plasma, various active species such as oxygen radicals, hydroxyl radicals, and ozone gas can be generated. These active species act on the upper surface of the substrate W. As a specific example, the active species act on a liquid film of a processing liquid (sulfuric acid in this case) on the upper surface of the substrate W. This improves the processing performance of the processing liquid. Specifically, the reaction between the active species and sulfuric acid produces Caro's acid, which has high processing performance (oxidizing power in this case). Caro's acid is also known as peroxomonosulfuric acid. When this Caro's acid acts on the resist on the substrate W, it can oxidize and remove the resist.

[0058] However, due to the generation of plasma, the temperature around the plasma reactor 1 rises. For example, the temperature may reach several hundred degrees Celsius, or more specifically, approximately 200 to 350 degrees Celsius. This makes it easier for the processing liquid on the upper surface of the substrate W to evaporate, and the atmosphere directly above the substrate W contains a large amount of volatile components of the processing liquid. If this processing liquid atmosphere acts on the metal parts of the electrode unit (described below) of the plasma reactor 1, it may cause problems with the electrode unit, such as corrosion. Furthermore, if plasma acts on the metal parts of the electrode unit, it may also cause problems with the electrode unit, such as sputtering.

[0059] Therefore, in this embodiment, a plasma reactor 1 is provided in which the processing liquid atmosphere and plasma are less likely to act on the electrode portion.

[0060] 3, the plasma reactor 1 is provided with a gas supply unit 50 and a gas exhaust unit 55 for supplying and exhausting a purge gas (described later), which will be described in detail later. Also, in the example of Fig. 3, the processing unit 130 is provided with a cooling unit 8 for cooling the plasma reactor 1, which will also be described in detail later.

[0061] <Plasma reactor> Fig. 4 is a plan view schematically showing an example of the configuration of the electrode assembly 10, and Fig. 5 is a cross-sectional view schematically showing an example of the configuration of the plasma reactor 1. Below, first, an overview of the configuration of the plasma reactor 1 will be described, and then each part of the plasma reactor 1 will be described in detail.

[0062] The plasma reactor 1 includes an electrode assembly 10, a holding member 20, and a sealing member 30. The electrode assembly 10 is connected to a power source 16 via wiring 16A (corresponding to a first wiring) and wiring 16B (corresponding to a second wiring). The electrode assembly 10 receives power from the power source 16 and converts gas in a plasma space H2 (see FIG. 5) into plasma. The holding member 20 is a member that holds the electrode assembly 10. A storage space H1 (see FIG. 5) is formed inside the holding member 20, and this storage space H1 stores a connection portion C1 and a connection portion C2. The connection portion C1 connects the electrode assembly 10 to the wiring 16A, and the connection portion C2 connects the electrode assembly 10 to the wiring 16B. The connection portion C1 and the connection portion C2 are made of metal, as will be described in detail later. The sealing member 30 is attached to the holding member 20 and separates the storage space H1 from the plasma space H2. The seal member 30 suppresses or prevents the plasma and gas in the plasma space H2 from flowing into the storage space H1.

[0063] <Electrode assembly> 4 and 5, the electrode assembly 10 includes at least one electrode and at least one dielectric. In the example of Figures 4 and 5, the electrode assembly 10 includes a first electrode portion 11, a second electrode portion 12, a first dielectric 13, and a second dielectric 14. The first electrode portion 11 has a comb shape including a plurality of first linear electrodes 111 and a first assembly electrode 112, and the second electrode portion 12 has a comb shape including a plurality of second linear electrodes 121 and a second assembly electrode 122.

[0064] The first linear electrode 111 and the second linear electrode 121 are formed of a conductive material such as a metal material (e.g., tungsten) and have a rod-like shape (e.g., a cylindrical shape) extending along a horizontal longitudinal direction. In the example of FIG. 4, the first linear electrodes 111 and the second linear electrodes 121 are arranged parallel to each other in a plan view and alternately arranged in a horizontal arrangement direction perpendicular to the longitudinal direction. The first assembly electrode 112 connects the ends (base ends) of the multiple first linear electrodes 111 on one side in the longitudinal direction. The second assembly electrode 122 connects the ends (base ends) of the multiple second linear electrodes 121 on the other side in the longitudinal direction. In the example of FIG. 4, the first assembly electrode 112 and the second assembly electrode 122 have arc-shaped flat plate shapes of approximately the same diameter and curved in opposite directions. The first assembly electrode 112 and the second assembly electrode 122 are formed of a conductive material such as a metal material (e.g., aluminum).

[0065] Each first linear electrode 111 is covered by a first dielectric 13, and each second linear electrode 121 is covered by a second dielectric 14. The first dielectric 13 and the second dielectric 14 are formed of a dielectric material such as quartz or ceramics. Each first dielectric 13 and each second dielectric 14 has, for example, a cylindrical shape with a bottom extending along the longitudinal direction. The first linear electrode 111 is inserted along the longitudinal direction into the first dielectric 13, and the second linear electrode 121 is inserted along the longitudinal direction into the second dielectric 14. The tip of the first linear electrode 111 is covered by the first dielectric 13, while the base end of the first linear electrode 111 is exposed from the first dielectric 13 and connected to the first collection electrode 112. In other words, the first dielectric 13 covers the first linear electrode 111 except for the base end. The tip of the second linear electrode 121 is covered by the second dielectric 14, while the base end of the second linear electrode 121 is exposed from the second dielectric 14 and connected to the second assembly electrode 122. In other words, the second dielectric 14 covers the second linear electrode 121 except for the base end.

[0066] 4 and 5, the plasma reactor 1 is provided with a plate-shaped partition member 17. The partition member 17 is made of a dielectric material such as quartz or ceramics. The partition member 17 has, for example, a disk shape and is provided with its thickness direction aligned with the vertical direction. The first linear electrode 111 and the first dielectric 13 are provided vertically above the partition member 17, and the second linear electrode 121 and the second dielectric 14 are provided vertically below the partition member 17.

[0067] <Retaining member> The holding member 20 is formed of an insulating material such as a fluorine-based resin, and integrally holds the first electrode portion 11, the second electrode portion 12, the first dielectric 13, the second dielectric 14, and the partition member 17. In the example of FIG. 5, the holding member 20 includes a first member 21 and a second member 22.

[0068] Fig. 6 is an exploded cross-sectional view showing the electrode assembly 10 and the first member 21 and second member 22 of the holding member 20 separated from each other, and Fig. 7 is a plan view schematically showing an example of the configuration of the second member 22. Note that Fig. 7 shows a part of the electrode assembly 10 with imaginary lines. Fig. 8 is a cross-sectional view schematically showing the AA cross section of Fig. 5, and Fig. 9 is a cross-sectional view schematically showing the BB cross section of Fig. 5. An example of the holding member 20 will be described below with reference to Figs. 6 to 9.

[0069] The second member 22 has a ring shape centered on the rotation axis Q1 and includes an inner peripheral portion 221, a support portion 222, and an outer peripheral portion 223. The inner peripheral portion 221, the support portion 222, and the outer peripheral portion 223 all have a ring shape centered on the rotation axis Q1. The outer peripheral edge of the inner peripheral portion 221 is continuous with the inner peripheral edge of the support portion 222, and the outer peripheral edge of the support portion 222 is continuous with the inner peripheral edge of the outer peripheral portion 223.

[0070] 6 to 9, a groove 22a into which the tip end 141 of the second dielectric 14 is inserted and a groove 22b into which the base end 142 of the second dielectric 14 is inserted are formed on the upper surface of the inner circumferential portion 221. Specifically, in one semicircular arc region (the right side in FIG. 7) obtained by dividing the inner circumferential portion 221 into two in the circumferential direction, a plurality of grooves 22a into which the tip end 141 of the plurality of second dielectrics 14 is inserted are formed, and in the other semicircular arc region (the left side in FIG. 7), a plurality of grooves 22b into which the base end 142 of the plurality of second dielectrics 14 is inserted are formed. The grooves 22a and 22b into which the same second dielectric 14 is inserted extend linearly along the longitudinal direction of the second dielectric 14. The grooves 22a and 22b are grooves that open vertically upward and are U-shaped grooves in the examples of FIGS. 8 and 9.

[0071] According to this structure, each second dielectric 14 is supported at both ends by the inner circumferential portion 221 of the second member 22. Therefore, the holding member 20 can hold the second dielectric 14 more appropriately than in a cantilever support.

[0072] 8 and 9, the upper surface of inner circumferential portion 221 contacts the lower surface of the peripheral edge of partition member 17 in a portion other than grooves 22a and 22b, and supports partition member 17. This structure allows holding member 20 to hold partition member 17 more appropriately.

[0073] A groove 22c is also formed on the upper surface of the inner circumferential portion 221 (see FIGS. 6 and 7). The lower end portion 33 of the seal member 30 (see also FIG. 11) is inserted into the groove 22c. The groove 22c opens vertically upward and is, for example, a ring-shaped U-shaped groove centered on the rotation axis Q1.

[0074] The support portion 222 supports the first collection electrode 112 and the second collection electrode 122. Because the first collection electrode 112 and the second collection electrode 122 are provided at different height positions, the heights of a portion 222a of the support portion 222 that supports the first collection electrode 112 and a portion 222b that supports the second collection electrode 122 are different. Specifically, portion 222b is lower than portion 222b. The first collection electrode 112 and the second collection electrode 122 are connected to the support portion 222 by, for example, screws (not shown).

[0075] 6, the upper surface of the outer circumferential portion 223 is higher than the upper surface of the support portion 222. In other words, the outer circumferential portion 223 is located radially outward of the first assembly electrode 112 and the second assembly electrode 122 and protrudes vertically upward beyond the support portion 222.

[0076] The first member 21 is provided vertically above the second member 22 and is coupled to the second member 22 in the vertical direction by, for example, screws. In the example of FIG. 6, the first member 21 includes an inner circumferential portion 211, an outer circumferential portion 212, and a plate portion 213. The outer circumferential edge of the inner circumferential portion 211 is continuous with the inner circumferential edge of the outer circumferential portion 212. The inner circumferential portion 211 of the first member 21 faces an inner circumferential portion 221 of the second member 22 in the vertical direction. The plate portion 213 will be described later.

[0077] 6, 8, and 9, a plurality of grooves 21a into which tip ends 131 of a plurality of first dielectrics 13 are respectively inserted, and a plurality of grooves 21b into which base ends 132 of a plurality of first dielectrics 13 are respectively inserted are formed on the lower surface of inner circumferential portion 221. Groove 21a and groove 21b into which the same first dielectrics 13 are inserted extend linearly along the longitudinal direction of first dielectric 13. Groove 21a and groove 21b are grooves that open vertically downward, and are U-shaped grooves in the examples of FIGS. 8 and 9.

[0078] 8 and 9, the lower surface of the inner circumferential portion 211 contacts the upper surface of the peripheral edge of the partition member 17 in a portion other than the grooves 21a and 21b. With this structure, the inner circumferential portion 211 of the first member 21 and the inner circumferential portion 221 of the second member 22 can sandwich the peripheral edge of the partition member 17. Therefore, the holding member 20 can hold the electrode assembly 10 more firmly.

[0079] In the example of Fig. 6, a groove 21c into which the seal member 30 is press-fitted is formed on the lower surface of the inner circumferential portion 211. The groove 21c opens vertically downward and is, for example, a ring-shaped U-shaped groove centered on the rotation axis Q1. In the example of Fig. 6, the groove 21c is formed at a position opposite the groove 22c in the vertical direction. In other words, the diameter of the groove 21c is equal to the diameter of the groove 22c.

[0080] The lower surface of the outer circumferential portion 212 of the first member 21 is positioned vertically above the lower surface of the inner circumferential portion 211. In other words, the inner circumferential portion 211 of the first member 21 protrudes vertically downward further than the outer circumferential portion 212. The lower surface of the outer circumferential portion 212 of the first member 21 faces the upper surface of the outer circumferential portion 223 of the second member 22 in the vertical direction, and the first member 21 and the second member 22 are joined to each other by, for example, screws or the like (not shown).

[0081] When the first member 21 and the second member 22 are joined together, a storage space H1 is formed inside the holding member 20 (see FIG. 5). This storage space H1 is mainly defined by the outer peripheral side surface of the inner peripheral portion 211 of the first member 21, the lower surface of the outer peripheral portion 212, and the upper surface of the support portion 222 and the inner peripheral side surface of the outer peripheral portion 223 of the second member 22. This storage space H1 is formed, for example, around the entire circumference, centered on the rotation axis Q1. At least the first collection electrode 112 and the second collection electrode 122 are housed within the storage space H1.

[0082] The holding member 20 is formed with wire passages 21A and 21B that communicate with the storage space H1 (see FIGS. 5 and 6). The wire passage 21A is a space in which the wires 16A are routed, and in the example of FIG. 5, the lower end of the wire passage 21A communicates with the ceiling of the storage space H1 at a position facing the first collection electrode 112. The wire passage 21B is a space in which the wires 16B are routed, and in the example of FIG. 5, the lower end of the wire passage 21B communicates with the ceiling of the storage space H1 at a position facing the second collection electrode 122. An end of the wires 16A is connected to the first collection electrode 112 in the storage space H1, and an end of the wires 16B is connected to the second collection electrode 122 in the storage space H1.

[0083] In this structure, the connection C1 electrically connecting the first linear electrode 111 and the wiring 16A is formed by the base end of the first linear electrode 111, the first electrode assembly 112, and the end of the wiring 16A. The connection C2 electrically connecting the second linear electrode 121 and the wiring 16B is formed by the base end of the second linear electrode 121, the second electrode assembly 122, and the end of the wiring 16B. Because these connection C1 and connection C2 are housed in the storage space H1, there is a risk of corrosion of the connection C1 and connection C2 if a processing liquid atmosphere flows into the storage space H1. Furthermore, there is a risk of sputtering of the connection C1 and connection C2 if plasma flows into the storage space H1.

[0084] Therefore, a seal member 30 is provided between the lower surface of the inner circumferential portion 211 of the first member 21 and the upper surface of the inner circumferential portion 221 of the second member 22. The seal member 30 seals the gap between the lower surface of the inner circumferential portion 211 and the upper surface of the inner circumferential portion 221. An example of the seal member 30 will be described in detail below.

[0085] <Sealing material> FIG. 10 is a plan view that schematically shows an example of the configuration of the electrode assembly 10 and the seal member 30, and FIG. 11 is a cross-sectional view that schematically shows an example of the configuration of the seal member 30. As shown in FIG.

[0086] The seal member 30 has elasticity and is made of an elastic material such as silicone or rubber. The seal member 30 is provided to seal the space between the storage space H1 in the holding member 20 and the plasma space H2 (see FIG. 5). The plasma space H2 is a space in which the first linear electrode 111 and the second linear electrode 121 are mainly disposed, and is a space radially inward of the holding member 20.

[0087] 10 and 11, the sealing member 30 has a ring shape centered on the rotation axis Q1, and includes an upper end portion 31, a tubular portion (corresponding to a main body portion) 32, a lower end portion 33, and a protruding portion 34. The tubular portion 32 has a cylindrical shape centered on the rotation axis Q1.

[0088] The tubular portion 32 is formed with a plurality of first distal end holes 35a, a plurality of first proximal end holes 35b, a plurality of second distal end holes 36a, and a plurality of second proximal end holes 36b, which are through holes that pass through the tubular portion 32.

[0089] A distal end portion 131 of the first dielectric 13 penetrates each first distal hole 35a, and a proximal end portion 132 of the first dielectric 13 penetrates each first proximal hole 35b. The first distal hole 35a and the first proximal hole 35b, through which the same first dielectric 13 penetrates, are aligned in a straight line along the longitudinal direction of the first dielectric 13. The sealing member 30 is in close contact with the entire periphery of the side surface of the first dielectric 13 in the first distal hole 35a and the first proximal hole 35b. The diameters of the first distal hole 35a and the first proximal hole 35b before the first dielectric 13 is inserted may be slightly smaller than the outer diameter of the first dielectric 13. This allows the sealing member 30 to elastically deform and come into close contact with the side surface of the first dielectric 13.

[0090] The first linear electrode 111 extends along the longitudinal direction inside the first dielectric 13 and protrudes outward from a base end 132 of the first dielectric 13, so that the first linear electrode 111 passes through the first base end hole 35b. The base end of the first linear electrode 111 is connected to the first assembly electrode 112, which is located radially outward from the seal member 30. On the other hand, in the example of Fig. 10, the tip of the first linear electrode 111 is located radially inward from the seal member 30, so that the first linear electrode 111 does not pass through the first tip hole 35a.

[0091] A distal end portion 141 of the second dielectric 14 penetrates each second distal hole 36a, and a proximal end portion 142 of the second dielectric 14 penetrates each second proximal hole 36b. The second distal hole 36a and the second proximal hole 36b, through which the same second dielectric 14 penetrates, are aligned in a straight line along the longitudinal direction of the second dielectric 14. The sealing member 30 adheres to the entire circumference of the side surface of the second dielectric 14 in the second distal hole 36a and the second proximal hole 36b. The diameters of the second distal hole 36a and the second proximal hole 36b before the second dielectric 14 is inserted may be slightly smaller than the outer diameter of the second dielectric 14. This allows the sealing member 30 to elastically deform and adhere to the side surface of the second dielectric 14.

[0092] The second linear electrode 121 extends along the longitudinal direction inside the second dielectric 14 and protrudes outward from the base end 142 of the second dielectric 14, so that the second linear electrode 121 passes through the second base end hole 36b. The base end of the second linear electrode 121 is connected to the second assembly electrode 122, which is located radially outward from the seal member 30. On the other hand, in the example of Fig. 10, the tip of the second linear electrode 121 is located radially inward from the seal member 30, so that the second linear electrode 121 does not pass through the second tip hole 36a.

[0093] Here, first dielectric 13 is located vertically above partition member 17, and second dielectric 14 is located vertically below partition member 17, so the height position at which first distal hole 35a and first proximal hole 35b are formed is higher than the height position at which second distal hole 36a and second proximal hole 36b are formed. In other words, first distal hole 35a and first proximal hole 35b are formed at a height position that is vertically above second distal hole 36a and second proximal hole 36b.

[0094] The sealing member 30 has a ring shape and is located radially inward of the first assembly electrode 112 and the second assembly electrode 122. The partition member 17 is located radially inward of the ring-shaped sealing member 30.

[0095] The upper end 31 of the sealing member 30 is provided at the upper end of the cylindrical portion 32 and is continuous with the cylindrical portion 32. The upper end 31 has a ring shape centered on the rotation axis Q1, and its width (radial width) is larger than the width of the cylindrical portion 32. In the example of FIG. 11, the cross-sectional outline of the upper end 31 follows a circular shape. The upper end 31 is press-fitted into the groove 21c of the first member 21 of the holding member 20 (see FIG. 5). The width of the upper end 31 before elastic deformation may be slightly larger than the width of the groove 21c. In this way, the upper end 31 is press-fitted into the groove 21c while elastically deforming, thereby improving the adhesion between the sealing member 30 and the first member 21.

[0096] Furthermore, if the width of upper end portion 31 is greater than the width of cylindrical portion 32, upper end portion 31 can easily be compressed in the width direction while expanding in the vertical direction. Therefore, when assembling plasma reactor 1, upper end portion 31 can easily be press-fitted into groove 21c.

[0097] The lower end 33 of the sealing member 30 is provided at the lower end of the cylindrical portion 32 and is continuous with the cylindrical portion 32. The lower end 33 has a ring shape centered on the rotation axis Q1, and its width is greater than the width of the cylindrical portion 32. In the example of FIG. 11, the cross-sectional outline of the lower end 33 follows a circular shape. The lower end 33 is press-fitted into the groove 22c of the second member 22 of the holding member 20. The width of the lower end 33 before elastic deformation may be slightly greater than the width of the groove 22c. In this way, the lower end 33 is press-fitted into the groove 22c while elastically deforming, thereby improving the adhesion between the sealing member 30 and the second member 22.

[0098] Furthermore, if the width of the lower end portion 33 is larger than the width of the cylindrical portion 32, the lower end portion 33 can be easily compressed in the width direction while expanding in the vertical direction. Therefore, when assembling the plasma reactor 1, the lower end portion 33 can be easily press-fitted into the groove 22c.

[0099] The protrusion 34 protrudes radially inward from the inner circumferential surface of the seal member 30 (specifically, the inner circumferential surface of the cylindrical portion 32). The protrusion 34 has a ring shape that surrounds the entire periphery of the side surface of the partition member 17. The radially inner end of the protrusion 34 may abut against the side surface of the partition member 17, or a gap may be formed between the protrusion 34 and the side surface of the partition member 17.

[0100] Since the partition member 17 is positioned between the first dielectric 13 and the second dielectric 14 in the vertical direction, the protrusion 34 is arranged between the height positions of the first tip hole 35a and the second base end hole 36b and the height positions of the second tip hole 36a and the second base end hole 36b in the vertical direction.

[0101] <Effects of the embodiment> As described above, in the plasma reactor 1 according to the embodiment, the seal member 30 seals the gap between the first member 21 and the second member 22 of the holding member 20, radially inward of the storage space H1. Therefore, the seal member 30 can shield the storage space H1 from the plasma space H2. This can prevent the processing liquid atmosphere and plasma in the plasma space H2 from flowing into the storage space H1. This can prevent the processing liquid atmosphere and plasma from acting on the metal parts (i.e., the connection parts C1 and C2) in the storage space H1, thereby preventing problems caused by the processing liquid atmosphere and plasma.

[0102] In the above example, the seal member 30 has a ring shape that surrounds the plasma space H2, so that the seal member 30 can shield the storage space H1 from the plasma space H2 along the entire periphery.

[0103] In the above example, the tip of the first linear electrode 111 and the tip of the second linear electrode 121 are located radially inward of the seal member 30 in a plan view. Therefore, the electrode assembly 10 can suppress the generation of plasma in the storage space H1.

[0104] Furthermore, in the above example, the seal member 30 is formed with not only a first base end hole 35b through which the base end 132 of the first dielectric 13 passes, but also a first tip end hole 35a through which the tip end 131 of the first dielectric 13 passes. Similarly, the seal member 30 is formed with not only a second base end hole 36b through which the base end 142 of the second dielectric 14 passes, but also a second tip end hole 36a through which the tip end 141 of the second dielectric 14 passes. This structure makes it easier to assemble the plasma reactor 1, as will be described below.

[0105] Here, the procedure for assembling the plasma reactor 1 will be described. First, the seal member 30 is attached to the electrode assembly 10. Specifically, each first dielectric 13 is passed through both the first distal hole 35a and the first proximal hole 35b, and each second dielectric 14 is passed through both the second distal hole 36a and the second proximal hole 36b. This causes both ends of each first dielectric 13 to be held by the seal member 30, and both ends of each second dielectric 14 to be held by the seal member 30 (see FIG. 10). Next, the electrode assembly 10 and the seal member 30 are attached to the second member 22 of the holding member 20. Specifically, the second dielectric 14 is inserted into the grooves 22a and 22b, while the lower end 33 of the seal member 30 is inserted into the groove 22c of the second member 22. Next, the first member 21 of the holding member 20 is attached to the second member 22. Specifically, the first dielectric 13 is inserted into the grooves 21a and 21b of the first member 21, the upper end 31 of the sealing member 30 is inserted into the groove 21c of the first member 21, and the first member 21 is attached to the second member 22 while the wiring 16A and wiring 16B are passed through the wiring passages 21A and 21B of the first member 21.

[0106] For comparison, consider a structure in which the tip portion 131 of the first dielectric 13 and the tip portion 141 of the second dielectric 14 are located radially inward of the seal member 30, and the first tip hole 35a and the second tip hole 36a are not formed in the seal member 30. In this structure, the tip portion 131 of the first dielectric 13 is not held by the seal member 30. Therefore, when the seal member 30 is attached to the electrode assembly 10, the tip portion 131 of the first dielectric 13 may move in the thickness direction relative to the partition member 17. Similarly, the tip portion 141 of the second dielectric 14 may also move in the thickness direction relative to the partition member 17. Therefore, it is difficult for an operator to handle the electrode assembly 10 and the seal member 30 as a single unit.

[0107] In contrast, in the above example, the first dielectric 13 and the second dielectric 14 are held at both ends by the seal member 30, so that workers can easily handle the electrode assembly 10 and the seal member 30 as a unit and easily attach the electrode assembly 10 and the seal member 30 to the second member 22. In other words, the plasma reactor 1 can be assembled more easily.

[0108] Furthermore, in the above example, the seal member 30 is provided with a protrusion 34. This structure can narrow the gap between the seal member 30 and the side surface of the partition member 17. Therefore, the processing liquid atmosphere between the partition member 17 and the substrate W is less likely to pass through the gap and less likely to flow out vertically above the partition member 17. This can prevent the processing liquid atmosphere from acting on the components vertically above the partition member 17.

[0109] Furthermore, in the above example, the seal member 30 has an upper end portion 31 that is wider than the cylindrical portion 32. This improves the adhesion between the seal member 30 and the first member 21. Similarly, the seal member 30 has a lower end portion 33 that is wider than the cylindrical portion 32. This improves the adhesion between the seal member 30 and the second member 22. In other words, the sealing performance of the seal member 30 can be improved.

[0110] <Outer periphery sealing material> 5, a seal member 38 is provided between the lower surface of the outer circumferential portion 212 of the first member 21 and the upper surface of the outer circumferential portion 223 of the second member 22. The seal member 38 is elastic and seals the gap between the lower surface of the outer circumferential portion 212 and the upper surface of the outer circumferential portion 223. The seal member 38 is, for example, an O-ring centered on the rotation axis Q1. The seal member 38 seals the gap between the lower surface of the first member 21 and the upper surface of the second member 22, radially outward from the storage space H1. This structure makes it possible to prevent the atmosphere radially outward from the holding member 20 from flowing into the storage space H1.

[0111] <Gas supply to storage space H1> In the example of FIG. 3, the processing unit 130 further includes a gas supply unit 50. The gas supply unit 50 supplies purging gas to the storage space H1 through the wiring passage 21A (see also FIG. 5). In the example of FIG. 3, the gas supply unit 50 includes an air supply pipe 51 and a valve 52. The air supply pipe 51 forms an air supply path between the wiring passage 21A and a purge gas supply source 53. The purge gas supply source 53 supplies gas to the upstream end of the air supply pipe 51. The gas includes, for example, a rare gas (e.g., argon gas) and an inert gas such as nitrogen gas.

[0112] The valve 52 is interposed in the air supply pipe 51. When the valve 52 is opened, gas is supplied from the purge gas supply source 53 through the air supply pipe 51 and the wiring passage 21A to the storage space H1.

[0113] In the example of FIG. 3, the processing unit 130 further includes a gas exhaust section 55. The gas exhaust section 55 exhausts gas from the storage space H1 through the wiring passage 21B (see also FIG. 5). In the example of FIG. 3, the gas exhaust section 55 includes an exhaust pipe 56 and a valve 57. The exhaust pipe 56 forms an exhaust path between the wiring passage 21B and the outside. The valve 57 is interposed in the exhaust pipe 56. When the valve 57 is opened, the gas in the storage space H1 is exhausted to the outside through the wiring passage 21B and the exhaust pipe 56. The downstream end of the exhaust pipe 56 may be connected to a suction mechanism (e.g., a pump) that sucks in gas, or may be open to the atmosphere.

[0114] With this structure, the gas supplied from the wire passage 21A into the storage space H1 flows along opposite sides in the circumferential direction within the storage space H1. The gases then join at the lower end of the wire passage 21B and are exhausted to the outside through the wire passage 21B and the exhaust pipe 56. Therefore, even if a small amount of at least one of the treatment liquid atmosphere and the plasma flows into the storage space H1 from the plasma space H2, it moves along with the purge gas flowing through the storage space H1 and is exhausted to the outside. This prevents the treatment liquid atmosphere and the plasma from accumulating within the storage space H1, further reducing problems caused by the treatment liquid atmosphere and the plasma.

[0115] The gas supply unit 50 may also supply a purge gas to the storage space H1 so that the pressure in the storage space H1 is slightly higher than the pressure in the plasma space H2. This further prevents the processing liquid atmosphere and plasma from flowing from the plasma space H2 into the storage space H1.

[0116] In the above example, wiring passage 21A is used as a gas supply passage, and wiring passage 21B is used as a gas exhaust passage. Therefore, compared to when a gas passage separate from wiring passages 21A and 21B is formed in holding member 20, the configuration of holding member 20 can be simplified and the manufacturing cost can be reduced.

[0117] <Cooling section> 3, the processing unit 130 further includes a cooling unit 8 that cools the plasma reactor 1. In the example of FIG. 3, the cooling unit 8 supplies a cooling gas to the plasma reactor 1 to air-cool the plasma reactor 1. The cooling unit 8 includes a gas flow path member 81 and a gas supply unit 82. The gas flow path member 81 is a member that forms a flow path for the cooling gas, and is provided vertically above the plasma reactor 1. In other words, the gas flow path member 81 is provided on the opposite side of the plasma reactor 1 from the substrate holding unit 6.

[0118] 5, the gas flow path member 81 is composed of a plate portion 213 of the first member 21 and a third member 84. The plate portion 213 of the first member 21 has a plate-like shape, and its outer peripheral edge is continuous with the inner peripheral edge of the inner peripheral portion 211 of the first member 21. The plate portion 213 faces the electrode assembly 10 in the vertical direction. The third member 84 is attached to the upper surface of the plate portion 213 of the first member 21.

[0119] Gas supply passages 811 are formed in the gas flow passage member 81. In the example of FIG. 5, the multiple gas supply passages 811 extend vertically within the third member 84 and the plate portion 213, and their lower ends open at the lower surface of the gas flow passage member 81 (i.e., the lower surface of the plate portion 213). The opening of each gas supply passage 811 formed at the lower surface functions as a gas supply port 81a. The gas supply port 81a is formed at a position facing the plasma reactor 1 in the vertical direction, and opens vertically downward into the plasma space H2. The multiple gas supply ports 81a are, for example, arranged in a ring shape around the rotation axis Q1. The multiple gas supply ports 81a are, for example, arranged at equal intervals around the rotation axis Q1.

[0120] The gas supply unit 82 supplies cooling gas to the plasma reactor 1 through the air supply path 811. In the example of FIG. 3, the gas supply unit 82 includes an air supply pipe 821 and a valve 822. The air supply path 811 is connected to a cooling gas supply source 823 through the air supply pipe 821. The cooling gas supply source 823 supplies cooling gas to the upstream end of the air supply pipe 821. The cooling gas includes, for example, a rare gas (e.g., argon gas) and an inert gas such as nitrogen gas. A valve 822 is provided in the air supply pipe 821. When the valve 822 is opened, the cooling gas is supplied from the cooling gas supply source 823 through the air supply pipe 821 to the air supply path 811 and flows out from the air supply port 81a. Hereinafter, the space between the lower surface of the gas flow path member 81 and the plasma reactor 1 will also be referred to as a cooling space H3. Because the gas in the cooling space H3 can also be converted into plasma by the plasma reactor 1, the cooling space H3 is also a plasma space H2. The cooling gas flowing out from the gas supply port 81a into the cooling space H3 collides with the plasma reactor 1, thereby cooling the plasma reactor 1.

[0121] In the example of FIG. 3, the processing unit 130 further includes a gas exhaust section 83 that exhausts gas in the cooling space H3 to the outside. The gas exhaust section 83 exhausts gas in the cooling space H3 to the outside through an exhaust path 812 formed in the gas flow path member 81. In the example of FIG. 5, the exhaust path 812 extends vertically within the third member 84 and the plate portion 213 of the first member 21, and its lower end opens at the lower surface of the gas flow path member 81 (i.e., the lower surface of the plate portion 213). The opening of the exhaust path 812 formed in the lower surface functions as an exhaust port 81b. The exhaust port 81b is formed at a position vertically opposite the plasma reactor 1 and opens vertically downward in the cooling space H3. In the example of FIG. 5, the exhaust port 81b is formed at a position closer to the rotation axis Q1 than any of the multiple air inlets 81a. In other words, the exhaust port 81b is located radially inward of all of the air inlets 81a. In the example of FIG. 5, the exhaust port 81b is formed on the rotation axis Q1.

[0122] The gas discharge unit 83 includes an exhaust pipe 831 and a valve 832. The exhaust path 812 is connected to the outside through the exhaust pipe 831. A valve 832 is provided in the exhaust pipe 831. When the valve 832 is opened, the gas in the cooling space H3 is discharged to the outside through the exhaust path 812 and the exhaust pipe 831. The downstream end of the exhaust pipe 831 may be connected to a suction mechanism (e.g., a pump) that sucks in the gas, or may be open to the atmosphere.

[0123] As described above, the cooling unit 8 cools the plasma reactor 1. Therefore, thermal deterioration of the members (for example, the holding member 20) that accompanies a temperature rise in the plasma reactor 1 can be suppressed.

[0124] In the above example, the cooling unit 8 supplies cooling gas to the plasma reactor 1. This allows the low-temperature cooling gas to absorb heat from the plasma reactor 1, thereby cooling the plasma reactor 1.

[0125] Furthermore, in the above example, an exhaust port 81b is provided on the opposite side of the plasma reactor 1 from the substrate holder 6. The cooling gas in the cooling space H3 is exhausted to the outside through the exhaust port 81b, which prevents the cooling gas from flowing into the plasma space H2 between the plasma reactor 1 and the substrate W. This prevents the cooling gas from disturbing the plasma, allowing the substrate W to be processed more uniformly.

[0126] Furthermore, in the above example, the plasma reactor 1 is provided with the partition member 17, and the cooling unit 8 causes the cooling gas to flow out from the air supply port 81a on the opposite side of the partition member 17 from the substrate holding unit 6. Therefore, most of the cooling gas is blocked by the partition member 17. Therefore, the cooling gas is less likely to flow into the space between the partition member 17 and the substrate W, and is less likely to disturb the plasma between the partition member 17 and the substrate W. Therefore, the plasma reactor 1 can irradiate the substrate W with plasma more uniformly, and the uniformity of the processing on the substrate W can be improved.

[0127] In the above example, the gas inlet 81a and the gas outlet 81b are formed in the center of the plasma reactor 1, i.e., the center of the substrate W, in a plan view. As a specific example, the gas inlet 81a and the gas outlet 81b are preferably located only within a circular region having a diameter equal to half the diameter of the substrate W and centered on the rotation axis Q1. More preferably, the gas inlet 81a and the gas outlet 81b are preferably located only within a circular region having a diameter equal to or less than one-third the diameter of the substrate W, and even more preferably, one-quarter the diameter of the substrate W. With this structure, the cooling unit 8 can cool the central portion of the plasma reactor 1 more effectively than the peripheral portion.

[0128] When the plasma reactor 1 generates plasma, the temperature of the plasma reactor 1 increases due to the plasma, but the temperature of the peripheral portion tends to be lower than the temperature of the central portion. In the above example, the central portion of the plasma reactor 1 can be cooled more than the peripheral portion, so the temperature distribution of the plasma reactor 1 in a plan view can be made more uniform. This can improve the uniformity of processing of the substrate W.

[0129] <Wire passage shape> 5, the wire passage 21A and the wire passage 21B are also formed inside the gas flow path member 81. The wire passage 21A and the wire passage 21B extend radially inward vertically above the storage space H1, and extend vertically radially outward of the air supply path 811 and the exhaust path 812.

[0130] 3, gas flow path member 81 is connected to plasma lifting mechanism 15. As a specific example, plasma lifting mechanism 15 includes an arm having a tip connected to the upper end of gas flow path member 81, and a lifting unit such as a ball screw mechanism connected to the base end of the arm. Air supply path 811, exhaust path 812, wiring passage 21A, and wiring passage 21B formed in gas flow path member 81 may also extend into the interior of plasma lifting mechanism 15 (e.g., the interior of the arm) and communicate with the outside of chamber 80.

[0131] <Sealing member between the first member and the third member> 5, a seal member 39 is provided between the upper surface of the first member 21 and the lower surface of the third member 84. The seal member 39 is a so-called O-ring centered on the rotation axis Q1, and is provided between the upper surface of the first member 21 and the lower surface of the third member 84. The seal member 39 surrounds the air supply path 811, the exhaust path 812, and the vertical portions of the wire passage 21A and the wire passage 21B. This makes it possible to prevent the atmosphere radially outside the holding member 20 and the gas passage member 81 from flowing into the air supply path 811, the exhaust path 812, the wire passage 21A, and the wire passage 21B.

[0132] <Modification> Fig. 12 is a diagram schematically showing the configuration of a modified example of the plasma reactor 1. Hereinafter, the plasma reactor 1 in Fig. 12 will be referred to as a plasma reactor 1M. The plasma reactor 1M includes an electrode assembly 10M, a holding member 20M, and a seal portion 30M.

[0133] The electrode assembly 10M has a similar configuration to the electrode assembly 10, but the base end 132 of the first dielectric 13 is bent. Specifically, the base end 132 of the first dielectric 13 is bent in an L-shape and extends vertically upward. The base end 142 of the second dielectric 14 is also bent in the same manner.

[0134] 12, the first electrode unit 11 is further provided with a wiring unit 113 (e.g., a wire). The wiring unit 113 connects the first linear electrode 111 and the first assembly electrode 112. The first assembly electrode 112 is provided vertically above the portion of the first linear electrode 111 that extends in the horizontal direction.

[0135] 12, the second electrode unit 12 is further provided with a wiring portion 123 (e.g., a wire). The wiring portion 123 connects the second linear electrode 121 and the second assembly electrode 122. The second assembly electrode 122 is provided vertically above the portion of the second linear electrode 121 that extends in the horizontal direction.

[0136] The holding member 20M holds the electrode assembly 10M. A storage space H1 for storing the connection portions C1 and C2 is formed within the holding member 20M. In the example of Fig. 12, the holding member 20M includes a first member 21M, a second member 22M, a third member 23M, and a fourth member 24M.

[0137] The first member 21M includes a ring-shaped first plate portion centered on the rotation axis Q1 and a first side wall portion protruding vertically upward from the outer edge of the first plate portion. A groove into which the tip end 141 of the second dielectric 14 is inserted and a groove into which the base end 142 of the second dielectric 14 is inserted are formed on the upper surface of the first plate portion. The first member 21M supports both ends of the second dielectric 14 and the peripheral edge of the partition member 17.

[0138] The fourth member 24M has a ring shape centered on the rotation axis Q1, and is provided on the upper surface of the peripheral edge of the partition member 17. The fourth member 24M supports the first collection electrode 112.

[0139] The second member 22M is provided radially inward of the fourth member 24M and includes a circular second plate portion centered on the rotation axis Q1 and a second side wall portion extending vertically downward from the periphery of the second plate portion. Grooves into which multiple first dielectrics 13 are inserted may be formed in the lower surface of the second side wall portion. The vertical portion of the base end portion 132 of the first dielectrics 13 is located between the second side wall portion of the second member 22M and the fourth member 24M.

[0140] The third member 23M includes a circular third plate portion centered on the rotation axis Q1 and a third side wall portion extending vertically downward from the periphery of the third plate portion. The third side wall portion is located radially outward of the fourth member 24M. The lower surface of the third side wall portion of the third member 23M faces the upper surface of the first side wall portion of the first member 21M in the vertical direction and is connected to each other by, for example, screws. The vertical portion of the base end 142 of the second dielectric 14 is located between the fourth member 24M and a wall portion consisting of the first side wall portion of the first member 21M and the third side wall portion of the third member 23M. Furthermore, on the base end side of the second dielectric 14, the lower end of the third side wall portion of the third member 23M has a portion that protrudes radially inward, and the second collection electrode 122 is disposed on this portion.

[0141] The seal portion 30M includes a seal member 31M, a seal member 32M, and a seal member 33M. The seal member 31M is elastic and seals the gap between the second member 22M and the fourth member 24M. Specifically, the seal member 31M has a plate-like ring shape centered on the rotation axis Q1, with its inner peripheral edge attached to the outer peripheral surface of the second side wall portion of the second member 22M and its outer peripheral edge attached to the inner peripheral surface of the fourth member 24M. The seal member 31M has a plurality of first base end holes 31Mb formed therein, through which vertical portions of the base ends 132 of the plurality of first dielectrics 13 pass.

[0142] The seal member 32M is elastic and seals the gap between the third side wall portion of the third member 23M and the fourth member 24M. Specifically, the seal member 31M has a plate-like ring shape centered on the rotation axis Q1, with its inner peripheral edge attached to the outer peripheral surface of the fourth member 24M and its outer peripheral edge attached to the inner peripheral surface of the third side wall portion of the third member 23M. A second base end hole 32Mb is formed in the seal member 32M, through which the vertical portion of the base end 142 of the second dielectric 14 passes.

[0143] The sealing member 33M has elasticity and seals the gap between the fourth member 24M and the partition member 17. Specifically, the sealing member 33M has a ring shape centered on the rotation axis Q1, and is provided between the lower surface of the fourth member 24M and the upper surface of the partition member 17. The sealing member 33M is, for example, an O-ring.

[0144] The third member 23M is formed with a wiring passage (not shown) through which the wiring connected to the first assembly electrode 112 is routed, and a wiring passage (not shown) through which the wiring connected to the second assembly electrode 122 is routed.

[0145] In such a plasma reactor 1M, the seal portion 30M can also separate the storage space H1 from the plasma space H2.

[0146] Although the substrate processing apparatus 100 has been described in detail above, the above description is merely an example in all respects, and the substrate processing apparatus 100 is not limited thereto. It is understood that countless variations not illustrated can be envisioned without departing from the scope of this disclosure. The configurations described in the above embodiments and variations can be combined or omitted as appropriate, as long as they are not mutually inconsistent.

[0147] For example, although the plasma reactor 1 is provided with the partition member 17, the partition member 17 may not be provided, and the first electrode unit 11 and the second electrode unit 12 may be provided on the same plane. Furthermore, at least one of the first electrode unit 11 and the second electrode unit 12 may be provided inside the partition member 17.

[0148] Furthermore, the processing for the substrate W is not necessarily limited to resist removal processing, but can be applied to all processing in which the processing capacity of the processing liquid can be improved by active species, such as removal of a metal film, for example.

[0149] Furthermore, it is not always necessary to supply a processing liquid to the substrate W. For example, as a treatment using plasma, plasma or activated species may be applied directly to the upper surface of the substrate W. One example of such a treatment is a surface modification treatment of the substrate W. [Explanation of symbols]

[0150] 1. Plasma reactor 111 electrode (first linear electrode) 121 electrode (second linear electrode) 13 Dielectric (first dielectric) 132 Proximal end 14 Dielectric (second dielectric) 142 Proximal end 16A, 16B wiring 17 Partition member 20 Retaining member 21c,22c groove 30 Sealing material 21A,21B Wiring passage 31 End (upper end) 32 Main body (cylindrical part) 33 End (lower end) 34 Protrusion 35a Through hole (1st tip hole) 35b Through hole (1st proximal hole) 36a Through hole (second tip hole) 36b Through hole (2nd proximal hole) 50 Gas supply unit 55 Gas exhaust section 6 Board holding part 8 Cooling section 81a Air supply port 81b Exhaust port C1 connection C2 Connection W substrate

Claims

1. a substrate holder that holds a substrate; a plasma reactor that irradiates plasma onto a main surface of the substrate held by the substrate holder; Equipped with The plasma reactor comprises: At least one electrode disposed in the plasma space; At least one dielectric covering the electrode; Wiring connected to a power supply for the plasma; a holding member having a storage space for storing a connection portion that connects an end portion of the electrode exposed from the dielectric to the wiring, the holding member holding the electrode and the dielectric; a seal member having at least one through-hole through which the electrode passes, attached to the holding member, and shielding the storage space from the plasma space; A substrate processing apparatus comprising:

2. The substrate processing apparatus according to claim 1 , the at least one electrode includes a plurality of first linear electrodes extending in a longitudinal direction and a plurality of second linear electrodes arranged in parallel to the plurality of first linear electrodes; The at least one dielectric material is a plurality of first dielectrics covering portions of the plurality of first linear electrodes other than base ends on one side in the longitudinal direction; a plurality of second dielectrics covering the plurality of second linear electrodes except for the base end portions on the other side in the longitudinal direction; Including, the connection portion includes a first assembly electrode that connects the base ends of the plurality of first linear electrodes to an end of a first wiring that is the wiring, and a second assembly electrode that connects the base ends of the plurality of second linear electrodes to an end of a second wiring that is the wiring, the sealing member has a ring shape and is located inside the first collection electrode and the second collection electrode; a substrate processing apparatus, wherein the at least one through hole formed in the sealing member includes a plurality of first base end holes through which base ends of the plurality of first dielectrics respectively pass, and a second base end hole through which base ends of the plurality of second dielectrics respectively pass.

3. 3. The substrate processing apparatus according to claim 2, The at least one through hole is a plurality of first tip holes through which tip portions of the plurality of first dielectric bodies respectively pass; a plurality of second tip holes through which tip portions of the plurality of second dielectric bodies respectively pass; The substrate processing apparatus further comprises:

4. 4. The substrate processing apparatus according to claim 2, wherein: The device further includes a plate-shaped partition member provided inside the sealing member, the first linear electrode and the plurality of first dielectrics are provided on one side of the partition member, the second linear electrode and the plurality of second dielectrics are provided on the other side of the partition member, the sealing member surrounds a side surface of the partition member, The substrate processing apparatus, wherein an inner circumferential surface of the seal member includes a protrusion that protrudes toward the side surface of the partition member.

5. 5. The substrate processing apparatus according to claim 2, wherein The substrate processing apparatus, wherein tips of the first linear electrodes and tips of the second linear electrodes are located inside the sealing member.

6. 6. The substrate processing apparatus according to claim 1, The sealing member is a main body; an end portion provided at an end of the main body portion and wider than the main body portion; Including, The holding member has a groove into which the end of the sealing member is inserted.

7. 7. The substrate processing apparatus according to claim 1, The substrate processing apparatus further includes a gas supply unit that supplies gas to the storage space.

8. 8. The substrate processing apparatus according to claim 7, The holding member has a wiring passage formed therein, the wiring passage being connected to the storage space and through which the wiring is routed, The gas supply unit supplies the gas through the wiring passage.

9. 9. The substrate processing apparatus according to claim 7, The substrate processing apparatus further comprises a gas exhaust unit that exhausts gas from the storage space.

10. 10. The substrate processing apparatus according to claim 1, The substrate processing apparatus further comprises a cooling unit that cools the plasma reactor.

11. The substrate processing apparatus according to claim 10, The cooling unit is a substrate processing apparatus having at least one gas inlet located on an opposite side of the plasma reactor from the substrate holder, the gas inlet allowing a cooling gas to flow toward the plasma reactor;

12. The substrate processing apparatus according to claim 11, The cooling unit is The substrate processing apparatus has an exhaust port located on the opposite side of the plasma reactor from the substrate holding unit and opening toward the plasma reactor.

13. The substrate processing apparatus according to claim 12, The substrate processing apparatus, wherein the at least one air supply port and the exhaust port are formed only within a circular area that is half the diameter of the substrate in a plan view.

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