Semiconductor manufacturing equipment

Abstract

To provide a semiconductor manufacturing device capable of highly accurately correcting or controlling the warpage of a substrate.SOLUTION: A semiconductor manufacturing device (1) comprises a processing container (10). A holding unit (20) is provided in the processing container and can hold a substrate. A gas introduction unit (30) is provided on the first surface side of the substrate and introduces a process gas into the processing container. A first gas supply plate (40) is provided between the substrate and the gas introduction unit and includes a plurality of first holes allowing the passage of the process gas. A first electrode (60) is provided between the substrate and the first gas supply plate and includes a plurality of second holes for supplying the process gas to the first surface of the substrate. A second electrode (80) is provided on the second surface side of the substrate on the opposite side of the first surface and applies an electric field to the process gas between the first and second electrodes. A plurality of partition parts (70) are provided between the first electrode and the first gas supply plate, substantially linearly extend in a first direction substantially parallel to the first surface, and divide a space between the first electrode and the first gas supply plate into a plurality of regions.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present embodiment relates to a semiconductor manufacturing apparatus. [Background technology]

[0002] Semiconductor memory devices such as NAND flash memories often have a three-dimensional memory cell array in which multiple memory cells are arranged three-dimensionally. A semiconductor substrate having such a three-dimensional memory cell array may warp depending on the direction in which the word lines extend. Warping of the semiconductor substrate may affect yield and cause problems during transportation of the semiconductor substrate during the semiconductor manufacturing process. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-077751 [Patent Document 2] US Patent Application Publication No. 2019 / 0062918 [Patent Document 3] U.S. Patent Application Publication No. 2021 / 0301402 [Patent Document 4] U.S. Patent Application Publication No. 2021 / 0108314 [Patent Document 5] U.S. Patent Application Publication No. 2019 / 0145001 Summary of the Invention [Problem to be solved by the invention]

[0004] A semiconductor manufacturing device capable of correcting or controlling warpage of a semiconductor substrate with high precision is provided. [Means for solving the problem]

[0005] The semiconductor manufacturing apparatus according to this embodiment includes a processing vessel. A holding unit is provided within the processing vessel and is capable of holding a substrate. A gas inlet unit is provided on the first surface side of the substrate and introduces a process gas into the processing vessel. A first gas supply plate is provided between the substrate and the gas inlet unit and has a plurality of first holes through which the process gas passes. A first electrode is provided between the substrate and the first gas supply plate and has a plurality of second holes through which the process gas is supplied to the first surface of the substrate. A second electrode is provided on the second surface side of the substrate opposite the first surface and applies an electric field to the process gas between the first and second electrodes. A plurality of partitions are provided between the first electrode and the first gas supply plate and extend substantially linearly in a first direction substantially parallel to the first surface, dividing the space between the first electrode and the first gas supply plate into a plurality of regions. [Brief explanation of the drawings]

[0006] [Figure 1] 1 is a schematic diagram showing an example of the configuration of a semiconductor manufacturing apparatus according to a first embodiment. [Figure 2] FIG. 2 is a plan view showing an example of the configuration of a lower electrode. [Figure 3] FIG. 2 is a cross-sectional view showing a configuration example of a lower electrode. [Figure 4] FIG. 4 is a plan view showing an example of the configuration of a second gas dispersion plate. [Figure 5] FIG. 3 is a plan view showing an example of the configuration of a first gas distribution plate. [Figure 6] FIG. 3 is a cross-sectional view showing an example of the configuration of a first gas distribution plate, a second gas distribution plate, a gas introduction section, and piping. [Figure 7] FIG. 10 is a conceptual diagram showing the relationship between the warpage of the substrate and the word lines. [Figure 8] 10 is a graph showing the amount of warpage of a substrate when a material film is formed on a first surface of the substrate. [Figure 9A] 1 is a conceptual diagram showing warpage of a substrate when a material film is formed on a first surface of the substrate. [Figure 9B] 1 is a conceptual diagram showing warpage of a substrate when a material film is formed on a first surface of the substrate. [Figure 10] FIG. 10 is a plan view showing an example of the configuration of a lower electrode according to a second embodiment. [Figure 11] FIG. 10 is a cross-sectional view showing an example of the configuration of a lower electrode according to a second embodiment. [Figure 12] FIG. 10 is a plan view showing an example of the configuration of a second gas dispersion plate according to the second embodiment. [Figure 13] FIG. 10 is a plan view showing an example of the configuration of a first gas dispersion plate according to the second embodiment. [Figure 14] FIG. 10 is a plan view showing an example of the configuration of a lower electrode according to a third embodiment. [Figure 15] FIG. 10 is a cross-sectional view showing an example of the configuration of a lower electrode according to a third embodiment. [Figure 16] FIG. 10 is a plan view showing an example of the configuration of a lower electrode according to a fourth embodiment. [Figure 17] FIG. 10 is a plan view showing an example of the configuration of a mask portion attached to a lower electrode. [Figure 18] FIG. 3 is a cross-sectional view showing an example of the configuration of a lower electrode and a mask portion. [Figure 19] FIG. 10 is a plan view showing a state in which the mask portion opens a central portion of the hole in the lower electrode. [Figure 20] FIG. 10 is a cross-sectional view showing a state in which the mask portion opens a central portion of a hole in the lower electrode. [Figure 21] FIG. 10 is a plan view showing a state in which the mask portion opens a central portion of the hole in the lower electrode. [Figure 22] FIG. 10 is a cross-sectional view showing a state in which the mask portion opens a central portion of a hole in the lower electrode. [Figure 23] FIG. 10 is a plan view showing a state in which the mask portion opens the entire hole of the lower electrode. [Figure 24] FIG. 10 is a cross-sectional view showing a state in which the mask portion opens the entire hole of the lower electrode. [Figure 25] FIG. 11 is a plan view showing an example of the configuration of a lower electrode according to a fifth embodiment. [Figure 26] FIG. 4 is a plan view showing an example of the configuration of a mask portion attached to a lower electrode. [Figure 27] FIG. 3 is a cross-sectional view showing an example of the configuration of a lower electrode and a mask portion. [Figure 28] FIG. 10 is a plan view showing a state in which the mask portion opens a part of the hole in the lower electrode. [Figure 29] FIG. 10 is a cross-sectional view showing a state in which the mask portion opens a part of the hole in the lower electrode. [Figure 30]FIG. 10 is a plan view showing a state in which the mask portion opens the entire hole of the lower electrode. [Figure 31] FIG. 10 is a cross-sectional view showing a state in which the mask portion opens the entire hole of the lower electrode. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The present invention is not limited to the embodiment. The drawings are schematic or conceptual, and the proportions of the various parts are not necessarily the same as those in reality. In the specification and drawings, elements similar to those described above with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted as appropriate.

[0008] (First embodiment) 1 is a schematic diagram showing an example of the configuration of a semiconductor manufacturing apparatus 1 according to a first embodiment. The semiconductor manufacturing apparatus 1 (hereinafter also simply referred to as apparatus 1) is, for example, a CVD (Chemical Vapor Deposition) apparatus that forms a material film TF on a substrate W.

[0009] The apparatus 1 includes a chamber 10, a carrier ring 20, a gas introduction section 30, a first gas distribution plate 40, a second gas distribution plate 50, a lower electrode 60, a partition plate 70, an upper electrode 80, a support 90, a controller 100, gas supply sources 110 and 130, and piping 120 and 140.

[0010] The chamber 10 is capable of accommodating a substrate W and is capable of reducing the pressure inside the chamber 10. A film formation process is performed on the substrate W inside the chamber 10. The chamber 10 is made of a heat-resistant, pressure-resistant, and corrosion-resistant material such as stainless steel.

[0011] The carrier ring 20 is a holder capable of holding the substrate W within the chamber 10. The carrier ring 20 has, for example, a circular ring shape, and supports the edge of the substrate W with a counterbore provided on its inner periphery. The center of the carrier ring 20 is open, and a material film TF can be formed on a first surface (back surface) F1 of the substrate W. The carrier ring 20 is made of a material such as aluminum, stainless steel, or ceramics. The substrate W has a first surface F1 on which the material film TF is formed and a second surface F2 opposite the first surface F1. The substrate W is, for example, a semiconductor substrate such as a silicon substrate. Semiconductor elements such as a three-dimensional memory cell array are formed on the second surface F2 of the substrate W. The first surface F1 of the substrate W is the back surface of the substrate W, and no semiconductor elements are formed on it.

[0012] The gas introduction unit 30 introduces the process gas branched by the piping 120 into the chamber 10 from the first surface F1 side of the substrate W via the gas introduction pipe Gin1. The gas introduction unit 30 supplies the process gas to the first gas dispersion plate 40. The gas introduction unit 30 is made of a heat-resistant and corrosion-resistant material such as stainless steel or ceramics.

[0013] The gas inlet pipe Gin1 guides and supplies the process gases branched by the pipe 120 to the corresponding regions between the first gas dispersion plate 40 and the lower electrode 60, respectively.

[0014] The first gas dispersion plate 40 is provided between the substrate W and the gas inlet unit 30 and has a plurality of holes 40h through which the process gas passes. The plurality of holes 40h are provided one by one corresponding to a plurality of regions Ra to Rg separated by the partition plate 70 between the lower electrode 60 and the first gas dispersion plate 40. The holes 40h communicate with one of the regions Ra to Rg from the gas inlet pipe Gin1 and introduce the process gas from the gas inlet pipe Gin1 into the regions Ra to Rg. At this time, the plurality of holes 40h function to disperse the process gas in each of the regions Ra to Rg. The first gas dispersion plate 40 is made of a material such as aluminum, stainless steel, or ceramics.

[0015] The second gas dispersion plate 50 is provided between the first gas dispersion plate 40 and the lower electrode 60 and has a plurality of holes 50h for allowing the process gas to pass therethrough. One or more of the holes 50h are provided for each of the regions Ra to Rg. The holes 50h function to disperse the process gas from the first gas dispersion plate 40 within each of the regions Ra to Rg. The second gas dispersion plate 50 is not necessarily provided and may be omitted. In this case, the process gas introduced from the first gas dispersion plate 40 into the regions Ra to Rg is supplied from the lower electrode 60 to the substrate W without passing through the second gas dispersion plate 50. The second gas dispersion plate 50 is made of a material such as aluminum, stainless steel, or ceramics.

[0016] The lower electrode 60 is provided between the substrate W and the first and second gas distribution plates 40, 50 and has a plurality of holes 60h that supply the process gas to the first surface F1 of the substrate W. The plurality of holes 60h are provided one by one corresponding to each of the regions Ra to Rg. For example, the holes 60h are arranged in a matrix pattern in each of the regions Ra to Rg of the lower electrode 60, approximately uniformly. The holes 60h supply the process gas from the first and second gas distribution plates 40, 50 from each of the regions Ra to Rg to the first surface F1 of the substrate W in the chamber 10. The distance between the first surface F1 of the substrate W and the lower electrode 60 is relatively narrow, and the process gas is supplied to the region of the first surface F1 of the substrate W facing the holes 60h. Note that the number of holes 40h, 50h, and 60h is preferably set such that the number of holes 40h < the number of holes 50h < the number of holes 60h in order to distribute the process gas and introduce it into the chamber 10. The lower electrode 60 is made of, for example, any of aluminum, stainless steel, ceramics, and the like.

[0017] The lower electrode 60 is also connected to a radio frequency power supply RF1 and receives power from the radio frequency power supply RF1, so that the lower electrode 60 applies an electric field to the process gas between the substrate W and the lower electrode 60, ionizing the process gas and generating plasma.

[0018] The partition plates 70 are disposed between the lower electrode 60 and the first gas dispersion plate 40 and divide the space between the lower electrode 60 and the first gas dispersion plate 40 into multiple regions Ra to Rg. The lower ends of the partition plates 70 contact the first gas dispersion plate 40 and fit into grooves formed in the first gas dispersion plate 40. The upper ends of the partition plates 70 contact the lower electrode 60 and fit into grooves formed in the lower electrode 60. Thus, the partition plates 70 extend in the process gas supply direction (Z direction) from the lower electrode 60 to the first gas dispersion plate 40, separating the process gases in the regions Ra to Rg. The partition plates 70 also extend substantially linearly in the Y direction, which is substantially parallel to the first surface F1 of the substrate W, and extend substantially parallel to each other in the Y direction. Thus, the partition plates 70 suppress direct diffusion of the process gas between the regions Ra to Rg, providing a substantially airtight separation. Although the regions Ra to Rg are indirectly connected via the holes 60h, the regions Ra to Rg are each substantially airtight during processing because the holes 60h of the lower electrode 60 eject the process gas toward the substrate W. The partition plate 70 is made of a material such as aluminum, stainless steel, or ceramics.

[0019] The upper electrode 80 is provided on the second surface F2 of the substrate W, opposite the first surface F1. The upper electrode 80 is connected to a radio frequency power supply RF2 and receives power from the radio frequency power supply RF2. The lower electrode 60 and the upper electrode 80 apply an electric field to the process gas between the substrate W and the lower electrode 60, ionizing the gas and turning it into a plasma state. As a result, a material film TF made from the process gas is deposited on the first surface F1 of the substrate W.

[0020] The upper electrode 80 is also provided with a gas inlet pipe Gin2 and a plurality of holes 80h. The gas inlet pipe Gin2 introduces an inert gas branched by the pipe 140 into the chamber 10. The plurality of holes 80h are provided on the surface of the upper electrode 80 facing the second surface F2 of the substrate W, and supply the inert gas to the second surface F2 of the substrate W. During processing, the upper electrode 80 supplies the inert gas to the second surface F2 of the substrate W through the holes 80h, preventing a material film from being formed on the second surface F2 of the substrate W by the process gas. The inert gas may be, for example, helium, nitrogen, argon, or the like. The upper electrode 80 is made of a material such as aluminum, stainless steel, or ceramics.

[0021] A heater HT1 is provided below the gas inlet part 30 and the first and second gas distribution plates 40, 50. For example, the heater HT1 is provided inside the base 95 through which the gas inlet pipe Gin1 passes. In addition, a heater HT2 is provided inside the upper electrode 80. The heaters HT1 and HT2 are provided to heat the substrate W to a predetermined temperature.

[0022] The support posts 90 are provided between the base 95 and the carrier ring 20 and support the carrier ring 20 .

[0023] The controller 100 controls the gas supply sources 110 and 130 to control the flow rates and / or introduction times of the process gas and the inert gas. For example, the controller 100 controls the flow rates or introduction times of the process gases introduced into each of the regions Ra to Rg. This allows the thickness of the material film TF to be varied in the regions on the first surface F1 of the substrate W corresponding to each of the regions Ra to Rg. That is, the controller 100 can control the thickness of the material film TF within the first surface F1 of the substrate W by changing the supply amount of the process gas introduced into each of the regions Ra to Rg.

[0024] A gas supply source 110 supplies a process gas to a gas inlet pipe Gin1 via a pipe 120. A gas supply source 130 supplies an inert gas to a gas inlet pipe Gin2 via a pipe 140.

[0025] The pipe 120 may be a manifold configured to be able to deliver process gas at any flow rate to each of the regions Ra to Rg, and the pipe 140 may be a manifold configured to be able to deliver inert gas at any flow rate to the gas inlet pipe Gin2.

[0026] The controller 100 can control the flow rate and introduction time of the process gas for each of the regions Ra to Rg by controlling the gas supply source 110 and the piping 120. The controller 100 can also control the flow rate and introduction time of the inert gas for the gas introduction pipe Gin2 by controlling the gas supply source 130 and the piping 140.

[0027] The process gas and inert gas introduced into the chamber 10 are used to form the material film TF, and then exhausted from a gas exhaust port Gout.

[0028] Fig. 2 is a plan view showing an example of the configuration of the lower electrode 60. Fig. 3 is a cross-sectional view showing an example of the configuration of the lower electrode 60. Fig. 3 shows a cross section taken along line 3-3 in Fig. 2.

[0029] When viewed from a direction perpendicular to the first surface F1 of the substrate W (Z direction), the lower electrode 60 has a substantially rectangular shape with four sides equal to or larger than the diameter of the substrate W. Therefore, when the substrate W is mounted on the carrier ring 20, when viewed from the Z direction, the lower electrode 60 overlaps the substrate W, and the outer edge of the lower electrode 60 is located outside the outer edge of the substrate W. This allows the holes 60h of the lower electrode 60 to be arranged substantially evenly over the entire surface of the substrate W.

[0030] The lower electrode 60 also has a plurality of grooves 60tr into which the partition plates 70 are fitted. The grooves 60tr are provided on the surface of the lower electrode 60 facing the first or second gas dispersion plate 40, 50, and, like the partition plates 70, are provided so as to extend substantially linearly in the Y direction. Therefore, the grooves 60tr are provided between the regions Ra to Rg. The holes 60h are arranged substantially evenly in each of the regions Ra to Rg. This allows the lower electrode 60 to supply the process gas to each region on the first surface F1 of the substrate W corresponding to each of the regions Ra to Rg. As a result, material films TF having different thicknesses can be formed on the first surface F1 of the substrate W in the regions Ra to Rg.

[0031] Support portions 60p are provided on the outer edge of the lower electrode 60, and position the lower electrode 60 between the first and second gas dispersion plates 40, 50 and the substrate W. The support portions 60p also form a space between the lower electrode 60 and the first gas dispersion plate 40. The support portions 60p may be provided along the entire outer edge of the lower electrode 60. The support portions 60p may also be provided partially (for example, only at the four corners) as long as they are located in positions that can stably support the lower electrode 60. The support portions 60p may be formed integrally with the portions of the lower electrode 60 where the holes 60h are arranged.

[0032] FIG. 4 is a plan view showing an example of the configuration of the second gas dispersion plate 50. As shown in FIG.

[0033] When viewed from a direction perpendicular to the first surface F1 of the substrate W (Z direction), the second gas dispersion plate 50 has a substantially rectangular shape with four sides equal to or larger than the diameter of the substrate W, similar to the lower electrode 60. Therefore, when the substrate W is mounted on the carrier ring 20, the second gas dispersion plate 50 overlaps the substrate W when viewed from the Z direction, and the outer edge of the second gas dispersion plate 50 is positioned outside the outer edge of the substrate W. As a result, the holes 50h of the second gas dispersion plate 50 are distributed over the entire surface of the substrate W.

[0034] The second gas dispersion plate 50 also has a plurality of through holes 50v into which the partition plate 70 is fitted. The through holes 50v are provided on the surface of the second gas dispersion plate 50 facing the first dispersion plate 40 or the lower electrode 60, and, like the partition plate 70, are provided so as to extend substantially linearly in the Y direction. Therefore, the through holes 50v are provided between the regions Ra to Rg. The holes 50h are arranged substantially evenly in each of the regions Ra to Rg in a plan view seen from the Z direction, and are arranged offset from the holes 40h of the first gas dispersion plate 40. This allows the second gas dispersion plate 50 to distribute the process gas from the first gas dispersion plate 40 and send it toward the lower electrode 60 in each of the regions Ra to Rg.

[0035] Because the partition plate 70 is provided to penetrate the second gas dispersion plate 50 and reach the first gas dispersion plate 40, the process gases supplied to the regions Ra to Rg from the gas introduction part 30 are led to the lower electrode 60 without being mixed with each other, while maintaining the supply amounts of the process gases to the regions Ra to Rg. Therefore, the lower electrode 60 can supply different amounts of the process gas to the regions on the first surface F1 of the substrate W corresponding to the regions Ra to Rg, respectively.

[0036] Support portions 50p are provided on the outer edge of the second gas dispersion plate 50, and position the second gas dispersion plate 50 between the first gas dispersion plate 40 and the lower electrode 60. The support portions 50p also form spaces between the second gas dispersion plate 50 and the first gas dispersion plate 40 and between the second gas dispersion plate 50 and the lower electrode 60. The support portions 50p may be provided along the entire outer edge of the second gas dispersion plate 50. The support portions 50p may also be provided partially (for example, only at the four corners) as long as they are positioned to stably support the second gas dispersion plate 50. The support portions 50p may be formed integrally with the portions of the second gas dispersion plate 50 where the holes 50h are arranged.

[0037] FIG. 5 is a plan view showing an example of the configuration of the first gas dispersion plate 40. As shown in FIG.

[0038] When viewed in a direction perpendicular to the first surface F1 of the substrate W (Z direction), the first gas dispersion plate 40 has a substantially rectangular shape with four sides equal to or larger than the diameter of the substrate W, similar to the lower electrode 60. Therefore, when the substrate W is mounted on the carrier ring 20, the first gas dispersion plate 40 overlaps the substrate W when viewed in the Z direction, and the outer edge of the first gas dispersion plate 40 is positioned outside the outer edge of the substrate W. As a result, the holes 40h of the first gas dispersion plate 40 are distributed over the entire surface of the substrate W.

[0039] The first gas dispersion plate 40 also has a plurality of grooves 40tr into which the partition plates 70 are fitted. The grooves 40tr are provided on the surface of the first gas dispersion plate 40 facing the lower electrode 60 or the second gas dispersion plate 50, and, like the partition plate 70, extend substantially linearly in the Y direction. The grooves 40tr are provided between the regions Ra to Rg so that the partition plate 70 separates the regions Ra to Rg. The holes 40h are arranged substantially evenly in each of the regions Ra to Rg in a plan view seen from the Z direction, and are provided corresponding to the gas inlets 31 of the gas introduction unit 30 in FIG. 6. The gas inlets 31 are provided corresponding to each of the regions Ra to Rg and introduce the process gas into each of the regions Ra to Rg. This allows the first gas dispersion plate 40 to deliver the process gas from the gas introduction unit 30 to each of the regions Ra to Rg.

[0040] 6 is a cross-sectional view showing an example of the configuration of the first gas distribution plate 40, the second gas distribution plate 50, the gas introduction unit 30, and the pipes 120. The multiple pipes 120 are connected to different gas introduction ports 31 from a region Rd in the center of the substrate W to regions Ra and Rg at the edges of the substrate W, depending on the distance from the center of the substrate W. For example, the pipes 120 include pipes 120d, 120ce, 120bf, and 120ag. The pipe 120d is connected to the gas introduction port 31 corresponding to the region Rd in the center of the substrate W and introduces a process gas into the region Rd. The pipe 120ce is connected to the gas introduction port 31 corresponding to regions Rc and Re adjacent to both sides of the region Rd and introduces a process gas into the regions Rc and Re. The pipe 120bf is connected to the gas introduction port 31 corresponding to the region Rf adjacent to the region Re and the region Rb adjacent to the region Rc and introduces a process gas into the regions Rf and Rb. The pipe 120ag is connected to gas inlets 31 corresponding to the region Rg adjacent to the region Rf and the region Ra adjacent to the region Rb, and introduces process gas into the regions Rg and Ra. The controller 100 can supply different flow rates of process gas to the regions Rd, Rc, Re, Rb, Rf, Ra, and Rg via the pipes 120d, 120ce, 120bf, and 120ag. Alternatively, the controller 100 can supply process gas to the regions Rd, Rc, Re, Rb, Rf, Ra, and Rg for different periods of time. This allows the controller 100, the gas supply source 110, and the pipe 120 to introduce different amounts of process gas into the regions Ra to Rg. The configuration of the pipe 120 is not particularly limited and may be arbitrary. For example, the pipe 120 may be configured to supply process gas individually to each of the regions Ra to Rg. In this case, the supply amount of process gas can be different for each of the regions Ra to Rg.

[0041] With this configuration, the process gas from the multiple gas inlets 31 of the gas introduction unit 30 is introduced into each of the regions Ra to Rg through the holes 40h of the first gas distribution plate 40. In the regions Ra to Rg, the process gas is dispersed by the first and second gas distribution plates 40, 50. The process gas introduced into each of the regions Ra to Rg is then supplied to the first surface F1 of the substrate W through the holes 60h of the lower electrode 60. Because the regions Ra to Rg are separated by the partition plate 70, the process gas in the regions Ra to Rg is supplied from the lower electrode 60 to each region of the substrate W without mixing within the regions Ra to Rg. Therefore, the controller 100 can control the flow rate or introduction time of the process gas introduced into each of the regions Ra to Rg, and can individually control the supply amount of the process gas supplied from the regions Ra to Rg to the substrate W.

[0042] Here, the warpage of the substrate W will be described.

[0043] 7 is a conceptual diagram showing the relationship between the warpage of the substrate W and the word lines WL. In a three-dimensional memory cell array, the word lines WL are stacked in the Z direction and electrically separated by slits (not shown) extending in the Z direction. When the slits extend in the Y direction in a plan view seen from the Z direction, the word lines WL also extend in the Y direction as shown in FIG.

[0044] The warpage of the substrate W depends on the extension direction of the word lines WL. For example, if the extension direction of the word lines WL is the Y direction, the substrate W will be recessed in the -Z direction at the center in the Y direction and raised in the +Z direction at both ends, as shown in FIG. 7. That is, the substrate W is warped in a roughly U-shape (bowl-like) in the cross section in the Y direction. Such warpage of the substrate W may cause problems in transporting the substrate W in the semiconductor manufacturing process. Furthermore, warpage of the substrate W may cause a decrease in yield. Therefore, in this embodiment, a material film TF is formed on the back surface of the substrate W to correct the warpage of the substrate W caused by the word lines WL.

[0045] FIG. 8 is a graph showing the amount of warpage of a substrate W when a material film TF is formed on the first surface F1 of the substrate W. The horizontal axis represents the thickness Ttf of the material film TF. The vertical axis represents the amount of warpage of the substrate W due to the material film TF. The amount of warpage of the substrate W represents the position of the center of the substrate W relative to the edges in the Z direction. Therefore, in this graph, the +Z direction means that the center of the substrate W protrudes more than the edges, creating a convex mountain-like shape. The -Z direction means that the center of the substrate W is recessed more than the edges, creating a concave bowl-like shape. Furthermore, FIGS. 9A and 9B are conceptual diagrams showing the warpage of a substrate W when a material film TF is formed on the first surface F1 of the substrate W.

[0046] When the material film TF is a silicon nitride film, the center of the substrate W protrudes more than the edges and warps in a mountain shape, as shown in Fig. 9A. As shown in Fig. 8, the amount of warping of the substrate W increases as the film thickness Ttf of the material film TF (silicon nitride film) increases.

[0047] When the material film TF is a silicon oxide film, the substrate W warps in a bowl shape with its center recessed more than its edges, as shown in Fig. 9B. As shown in Fig. 8, as the film thickness Ttf of the material film TF (silicon oxide film) increases, the amount of warping of the substrate W increases.

[0048] In this embodiment, the warpage of the substrate W shown in Fig. 7 is corrected using the characteristics shown in Fig. 8, Fig. 9A, and Fig. 9B. To achieve this, a material film TF according to the state and amount of warpage of the substrate W is formed on the first surface F1 of the substrate W with film thicknesses that vary from part to part.

[0049] For example, if the substrate W is warped in a bowl shape (the center of the substrate W is closer to the lower electrode 60 than the edge of the substrate W), a silicon nitride film is formed on the first surface F1 to apply a reverse stress to the substrate W. The silicon nitride film is formed, for example, by plasma CVD using a gas containing SiH, NH, H, N, and Ar as a process gas. That is, if the warpage of the substrate W causes the center of the substrate W to be closer to the lower electrode 60 than the edge of the substrate W, the gas inlet 30 may introduce a process gas containing SiH, NH, H, N, and Ar into the chamber 10.

[0050] On the other hand, if the substrate W is warped in a mountain shape (the edge of the substrate W is closer to the lower electrode 60 than the center of the substrate W), a silicon oxide film is formed on the first surface F1 to apply an opposite stress to the substrate W. The silicon oxide film is formed, for example, by plasma CVD using a gas containing SiH4, N2O, H2, N2, and Ar as a process gas. That is, if the edge of the substrate W is closer to the lower electrode 60 than the center of the substrate W due to the warpage of the substrate W, the gas inlet 30 may introduce a process gas containing SiH4, N2O, H2, N2, and Ar into the chamber 10.

[0051] For example, in the case of a substrate W warped into a bowl shape as shown in FIG. 7, the apparatus 1 deposits a silicon nitride film as the material film TF on the first surface (back surface) F1 of the substrate W. When the silicon nitride film is deposited on the first surface F1 of the substrate W, the substrate W is subjected to stress such that it warps into a mountain shape, as opposed to a bowl shape, as shown in FIG. 9A. In this case, to effectively correct the bowl-shaped warpage of the substrate W in the Y direction, it is preferable that the material film TF is formed relatively thick at the center of the substrate W in the X direction in FIG. 7 so as to extend in the Y direction. Furthermore, the material film TF may be formed so as to become gradually thinner with increasing distance from the center line of the substrate W in the X direction. This allows the warpage of the substrate W to be corrected relatively strongly near the center line of the substrate W in the X direction and less so with increasing distance from the center line of the substrate W. As a result, the bowl-shaped substrate W can be effectively corrected to approach flatness.

[0052] For example, in the apparatus 1, the substrate W is mounted on the carrier ring 20 so that the extension direction (Y direction) of the word lines WL of the substrate W is approximately parallel to the extension direction of the regions Ra to Rg (i.e., the partition plate 70). Next, the controller 100 increases the flow rate or lengthens the introduction time of the process gas introduced into the region Rd corresponding to the center of the substrate W among the regions Ra to Rg, compared to the regions Ra and Rg corresponding to the edges of the substrate W. As a result, the material film TF is formed relatively thick at the center of the substrate W and relatively thin at the edges of the substrate W. Furthermore, the controller 100 decreases the flow rate or shortens the introduction time of the process gas introduced into the corresponding regions Rb to Rf with increasing distance from the center of the substrate W. As a result, the material film TF is relatively thick at the center of the substrate W and gradually becomes thinner toward the edges of the substrate W. This allows the bowl-shaped substrate W to be corrected to be closer to flat.

[0053] In this way, the device 1 deposits the material film TF while aligning the extension direction of the regions Ra to Rg (i.e., the extension direction of the partition plates 70) substantially parallel to the extension direction of the word lines WL, thereby making it possible to change the thickness of the material film TF on the first surface F1 of the substrate W from the center to the edge, thereby effectively correcting warpage of the substrate W.

[0054] In the above embodiment, the substrate W is warped in a bowl shape, and a silicon nitride film is used as the material film TFn, for example. Conversely, if the substrate W is warped in a mountain shape, a silicon oxide film is used as the material film TFn, for example. That is, the apparatus 1 can correct the warpage of the substrate W not only when the substrate W is warped in a bowl shape, but also when the substrate W is warped in a mountain shape.

[0055] As a result, the apparatus 1 straightens and flattens the warpage of the substrate W or reduces the amount of warpage, enabling the substrate W to be transported in the semiconductor manufacturing process. Furthermore, suppressing the warpage of the substrate W leads to improvements in the quality and yield of semiconductor devices.

[0056] (Second embodiment) Fig. 10 is a plan view showing an example of the configuration of the lower electrode 60 according to the second embodiment. Fig. 11 is a cross-sectional view showing an example of the configuration of the lower electrode 60 according to the second embodiment. Fig. 11 shows a cross section taken along line 11-11 in Fig. 10.

[0057] The lower electrode 60 has a substantially circular shape with a diameter equal to or larger than the diameter of the substrate W when viewed from a direction perpendicular to the first surface F1 of the substrate W (Z direction). Therefore, when the substrate W is mounted on the carrier ring 20, the lower electrode 60 overlaps the substrate W when viewed from the Z direction, and the outer edge of the lower electrode 60 is located outside the outer edge of the substrate W. As a result, the holes 60h of the lower electrode 60 are dispersed and arranged over the entire surface of the substrate W. In the second embodiment, the holes 60h are arranged radially from the center of the lower electrode 60. The other configurations of the lower electrode 60 of the second embodiment may be similar to the configurations of the lower electrode 60 of the first embodiment.

[0058] FIG. 12 is a plan view showing an example of the configuration of the second gas distribution plate 50 according to the second embodiment.

[0059] When viewed in a direction perpendicular to the first surface F1 of the substrate W (Z direction), the second gas dispersion plate 50 has a substantially circular shape with a diameter equal to or larger than the diameter of the substrate W, similar to the lower electrode 60. Therefore, when the substrate W is loaded on the carrier ring 20, the second gas dispersion plate 50 overlaps the substrate W when viewed in the Z direction, and the outer edge of the second gas dispersion plate 50 is located outside the outer edge of the substrate W. The holes 50h of the second gas dispersion plate 50 are distributed over the entire surface of the substrate W. The other configuration of the second gas dispersion plate 50 of the second embodiment may be similar to the configuration of the second gas dispersion plate 50 of the first embodiment.

[0060] FIG. 13 is a plan view showing an example of the configuration of the first gas dispersion plate 40 according to the second embodiment.

[0061] When viewed from a direction perpendicular to the first surface F1 of the substrate W (Z direction), the first gas dispersion plate 40 has a substantially circular shape with a diameter equal to or larger than the diameter of the substrate W, similar to the lower electrode 60. Therefore, when the substrate W is mounted on the carrier ring 20, when viewed from the Z direction, the first gas dispersion plate 40 overlaps the substrate W, and the outer edge of the first gas dispersion plate 40 is located outside the outer edge of the substrate W. The holes 40h of the first gas dispersion plate 40 are distributed over the entire surface of the substrate W. The other configurations of the first gas dispersion plate 40 of the second embodiment may be similar to the configurations of the first gas dispersion plate 40 of the first embodiment.

[0062] Other configurations of the second embodiment may be similar to the corresponding configurations of the first embodiment. In this way, even if the first gas dispersion plate 40, the second gas dispersion plate 50, and the lower electrode 60 are substantially circular, the same effects as those of the first embodiment can be obtained.

[0063] (Third embodiment) Fig. 14 is a plan view showing an example of the configuration of the lower electrode 60 according to the third embodiment. Fig. 15 is a cross-sectional view showing an example of the configuration of the lower electrode 60 according to the third embodiment. Fig. 15 shows a cross section taken along line 15-15 in Fig. 14.

[0064] The lower electrode 60 of the third embodiment is the same as the lower electrode 60 of the second embodiment in that, when viewed from a direction perpendicular to the first surface F1 of the substrate W (Z direction), it has a substantially circular shape with a diameter equal to or larger than the diameter of the substrate W. Therefore, when the substrate W is mounted on the carrier ring 20, when viewed from the Z direction, the lower electrode 60 overlaps the substrate W, and the outer edge of the lower electrode 60 is located outside the outer edge of the substrate W. As a result, the holes 60h of the lower electrode 60 are distributed over the entire surface of the substrate W.

[0065] On the other hand, the holes 60h of the lower electrode 60 of the third embodiment are arranged in a matrix in each of the regions Ra to Rg of the lower electrode 60. In this way, the holes 60h may be arranged in a matrix in the substantially circular lower electrode 60.

[0066] Other configurations of the third embodiment may be the same as those of the second embodiment, and therefore the third embodiment can achieve the same effects as the second embodiment.

[0067] In each of the above embodiments, the multiple partition plates 70 all extend substantially parallel to the Y direction. Meanwhile, although not shown, one or more other partition plates may be provided for reinforcement in a direction substantially perpendicular to the partition plate 70 within the planes of the lower electrode 60 and the first and second gas dispersion plates 40, 50. Even if such other partition plates are added, the effect of this embodiment is not lost.

[0068] Furthermore, in each of the above embodiments, the second gas distribution plate 50 is provided, but if the process gas is sufficiently dispersed in each of the regions Ra to Rg, the second gas distribution plate 50 does not need to be provided.

[0069] (Fourth embodiment) Fig. 16 is a plan view showing an example of the configuration of a lower electrode 60 according to the fourth embodiment. Fig. 17 is a plan view showing an example of the configuration of a mask portion 200 attached to the lower electrode 60. Fig. 18 is a cross-sectional view showing an example of the configuration of the lower electrode 60 and the mask portion 200. Fig. 18 corresponds to the cross section taken along line 18-18 in Figs. 16 and 17.

[0070] The lower electrode 60 and the first and second gas dispersion plates 40, 50 according to the fourth embodiment are not provided with a partition plate 70 and are not provided with regions Ra to Rg. Accordingly, the lower electrode 60 is not provided with a groove 60tr. Although not shown, the second gas dispersion plate 50 is not provided with a through-hole 50v, and the first gas dispersion plate 40 is not provided with a groove 40tr. Other configurations of the lower electrode 60 and the first and second gas dispersion plates 40, 50 may be similar to those of the first embodiment. In plan view from the Z direction, the lower electrode 60 and the mask unit 200 have a substantially rectangular shape with four sides equal to or larger than the diameter of the substrate W, similar to the lower electrode 60 of the first embodiment.

[0071] On the other hand, in the fourth embodiment, a mask portion 200 is attached to the lower electrode 60 in place of the partition plate 70 .

[0072] The mask unit 200 is provided between the lower electrode 60 and the second gas dispersion plate 50. When the second gas dispersion plate 50 is not provided, the mask unit 200 is provided between the lower electrode 60 and the first gas dispersion plate 40. The mask unit 200 masks the holes 60h in the lower electrode 60 so as to block communication with the first or second gas dispersion plate 40, 50 in the space between the lower electrode 60 and the first or second gas dispersion plate 40, 50. The mask unit 200 is made of a material such as aluminum, stainless steel, or ceramics.

[0073] The mask unit 200 includes shutter units SH1 and SH2 and support columns 200p. As shown in FIGS. 17 and 18, the shutter units SH1 and SH2 are composed of multiple plate-like members 210 extending in the Y direction. The multiple plate-like members 210 are arranged without gaps in the X direction, thereby covering the entire surface of the lower electrode 60. This allows the mask unit 200 to block the lower electrode 60 from the first or second gas dispersion plate 40 or 50, thereby preventing the process gas from passing through the holes 60h and being introduced into the chamber 10. FIGS. 17 and 18 show a state in which the mask unit 200 covers the entire surface of the lower electrode 60 and blocks the process gas. The shutter units SH1 and SH2 are made of a material such as aluminum, stainless steel, or ceramics.

[0074] Furthermore, the plate-like member 210 is configured to be foldable from a center line L200 of the lower electrode 60 and the mask member 200 toward both sides of the lower electrode 60 in the ±X directions. The shutter member SH1 can be opened and closed in the −X direction from the center line L200 toward one side of the lower electrode 60 (in a direction approximately perpendicular to the center line L200). The shutter member SH2 can be opened and closed in the +X direction from the center line L200 toward the opposite side of the one side of the lower electrode 60 (in the opposite direction to the shutter member SH1). When the plate-like member 210 is folded, when viewed from the Z direction, the plate-like member 210 of the shutter member SH1 is stored overlapping along one side of the lower electrode 60, and the plate-like member 210 of the shutter member SH2 is stored overlapping along the other side of the lower electrode 60 (see FIGS. 23 and 24).

[0075] 18, the plate-like member 210 closest to the center line L200 of the lower electrode 60 is in contact with the rear surface of the lower electrode 60 and is configured to slide in the ±X directions on the rear surface of the lower electrode 60. When the shutter portions SH1 and SH2 are closed, the plate-like member 210 is spaced apart from the lower electrode 60 in a stepped manner as it moves away from the center line L200 in the ±X directions.

[0076] By opening the shutter SH1 in the −X direction from the center line L200 and the shutter SH2 in the +X direction from the center line L200, the mask unit 200 can expose the holes 60h of the lower electrode 60 to the first or second gas dispersion plate 40, 50. At this time, the plate-like member 210 closest to the center line L200 of the lower electrode 60 moves while remaining in contact with the rear surface of the lower electrode 60 (see FIGS. 18, 20, 22, and 24). In the region of the lower electrode 60 covered by the mask unit 200, the holes 60h are shielded from the first or second gas dispersion plate 40, 50, but in the region of the lower electrode 60 exposed by the mask unit 200, the holes 60h are exposed to the first or second gas dispersion plate 40, 50. Process gas is supplied to the substrate W through the exposed holes 60h that are not shielded by the mask unit 200.

[0077] 19 and 20 show a state in which the mask member 200 opens a central portion (e.g., about 25% opening) of the hole 60h in the lower electrode 60. FIG. 20 shows a cross-sectional view taken along line 20-20 in FIG. 19. In this case, the shutter members SH1 and SH2 are open on both sides (±X directions) of the center line L200 of the lower electrode 60, exposing a central portion of the hole 60h to the space 220. The other holes 60h are covered by the shutter members SH1 and SH2 and are shielded from the space 220 (i.e., the first and second gas dispersion plates 40 and 50). Here, the plate-like member 210 closest to the center line L200 remains in contact with the rear surface of the lower electrode 60, so that the process gas in the space 220 does not directly reach the holes 60h covered by the shutter members SH1 and SH2.

[0078] 21 and 22 are diagrams showing a state in which the mask member 200 opens a portion of the center of the hole 60h of the lower electrode 60 (e.g., about 50% opening). FIG. 22 shows a cross-sectional view taken along line 22-22 in FIG. 21. In this case, the shutter members SH1 and SH2 are further opened on both sides (±X directions) from the center line L200 of the lower electrode 60, exposing about half of the hole 60h to the space 220. The other holes 60h are covered by the shutter members SH1 and SH2 and are shielded from the space 220 (i.e., the first and second gas distribution plates 40 and 50). Again, the plate-like member 210 closest to the center line L200 remains in contact with the rear surface of the lower electrode 60, so that the process gas in the space 220 does not directly reach the holes 60h covered by the shutter members SH1 and SH2.

[0079] 23 and 24 are diagrams showing a state in which the mask portion 200 opens the entire hole 60h of the lower electrode 60. FIG. 24 shows a cross-sectional view taken along line 24-24 in FIG. 23. The plate-like members 210 of the shutter portions SH1 and SH2 are folded onto both sides of the lower electrode 60, overlapping each other when viewed from the Z direction. In this case, the shutter portions SH1 and SH2 are opened on both sides (±X directions) of the center line L200 of the lower electrode 60, exposing the entire hole 60h to the space 220.

[0080] In this way, the mask unit 200 can change the area of the lower electrode 60 exposed on both sides of the center line L200 depending on the opening degree of the shutter portions SH1 and SH2. The opening degree of the shutter portions SH1 and SH2 is determined when the tip of the plate-like member 210 closest to the center line L200 is in contact with the back surface of the lower electrode 60. Thereafter, the gas introduction unit 30 flows a process gas with the tip of the plate-like member 210 in contact with the back surface of the lower electrode 60. By forming the material film TF using such a mask unit 200, a material film TF having partially different thicknesses can be formed on the first surface F1 of the substrate. For example, first, the material film TF is deposited on the substrate W with the opening ratio shown in FIGS. 19 and 20 (e.g., an opening ratio of about 25%), then the material film TF is deposited on the substrate W with the opening ratio shown in FIGS. 21 and 22 (e.g., an opening ratio of about 50%), and further the material film TF is deposited on the substrate W with the opening ratio shown in FIGS. 23 and 24 (e.g., an opening ratio of about 100%). As a result, the material film TF is formed relatively thick at the center of the substrate W and relatively thin toward the edge. As a result, the fourth embodiment also makes it possible to appropriately correct warpage of the substrate W, similar to the first embodiment.

[0081] (Fifth embodiment) Fig. 25 is a plan view showing an example of the configuration of the lower electrode 60 according to the fifth embodiment. Fig. 26 is a plan view showing an example of the configuration of a mask portion 200 attached to the lower electrode 60. Fig. 27 is a cross-sectional view showing an example of the configuration of the lower electrode 60 and the mask portion 200. Fig. 27 corresponds to the cross section taken along line 27-27 in Figs. 25 and 26.

[0082] Similar to the fourth embodiment, the lower electrode 60 and the first and second gas dispersion plates 40, 50 according to the fifth embodiment are not provided with the partition plate 70. Also in the fifth embodiment, a mask portion 200 is attached to the lower electrode 60 instead of the partition plate 70. Note that in the fifth embodiment, the lower electrode 60 has a substantially circular shape in a plan view seen from the Z direction. Similar to the lower electrode 60 of the second embodiment, the lower electrode 60 and the mask portion 200 have a substantially circular shape with a diameter equal to or larger than the diameter of the substrate W in a plan view seen from the Z direction.

[0083] The mask unit 200 is provided between the lower electrode 60 and the second gas dispersion plate 50. When the second gas dispersion plate 50 is not provided, the mask unit 200 is provided between the lower electrode 60 and the first gas dispersion plate 40. The mask unit 200 masks the holes 60h in the lower electrode 60 so as to block communication with the first or second gas dispersion plate 40, 50 in the space between the lower electrode 60 and the first or second gas dispersion plate 40, 50. The mask unit 200 is made of a material such as aluminum, stainless steel, or ceramics.

[0084] The mask unit 200 includes a shutter unit SH3 and a frame 200f. As shown in FIGS. 26 and 27, the shutter unit SH3 is formed by arranging multiple plate-like members 210 in a circle. The multiple plate-like members 210 are arranged in a circle around the center C60 of the lower electrode 60 without any gaps, thereby covering the entire surface of the lower electrode 60. This allows the mask unit 200 to shield the lower electrode 60 from the first or second gas dispersion plate 40, 50 and prevent the process gas from passing through the holes 60h and being introduced into the chamber 10. In FIGS. 26 and 27, the mask unit 200 exposes the holes 60h in the center of the lower electrode 60 and shields the holes 60h in other areas. The shutter unit SH3 exposes at least the holes 60h in the center of the lower electrode 60 to the space 220. The shutter unit SH3 is made of a material such as aluminum, stainless steel, or ceramics.

[0085] 27, the end of each plate-shaped member 210 on the center C60 side is in contact with the back surface of the lower electrode 60 and is configured to slide on the back surface of the lower electrode 60. The plate-shaped member 210 is configured to be folded while rotating around the center C60. When the plate-shaped member 210 is folded away from the center C60, the contact portion between the plate-shaped member 210 and the lower electrode 60 moves from the center C60 of the lower electrode 60 toward the outer periphery.

[0086] By opening the shutter portion SH3 of the mask unit 200, the center of the lower electrode 60 and the holes 60h in the vicinity thereof can be exposed to the first or second gas dispersion plate 40, 50. At this time, the end of the plate-like member 210 near the center C60 of the lower electrode 60 remains in contact with the rear surface of the lower electrode 60, so that in the region of the lower electrode 60 covered by the mask unit 200, the holes 60h are shielded from the first or second gas dispersion plate 40, 50. The process gas is supplied to the substrate W from the holes 60h that are not shielded by the mask unit 200 and are exposed.

[0087] 28 and 29 are diagrams showing a state in which the mask member 200 opens some of the holes 60h in the lower electrode 60. FIG. 29 shows a cross-sectional view taken along line 29-29 in FIG. 28. In this case, the shutter member SH3 opens outward from the center C60 of the lower electrode 60, exposing some of the holes 60h to the space 220. The other holes 60h are covered by the shutter member SH3 and are shielded from the space 220 (i.e., the first and second gas distribution plates 40, 50). Here, the end of the plate-like member 210 close to the center C60 remains in contact with the rear surface of the lower electrode 60, so that the process gas in the space 220 does not directly reach the holes 60h covered by the shutter member SH3.

[0088] 30 and 31 are diagrams showing a state in which the mask portion 200 opens the entire hole 60h of the lower electrode 60. FIG. 31 shows a cross-sectional view taken along line 31-31 in FIG. 30. The plate-like members 210 of the shutter portion SH3 are folded onto the frame 200f of the lower electrode 60 so as to overlap each other when viewed from the Z direction. In this case, the shutter portion SH3 exposes the entire hole 60h of the lower electrode 60 to the space 220.

[0089] As described above, the mask unit 200 includes a substantially circular shutter portion SH3 that can be opened and closed from the center of the lower electrode 60 toward the outer edge of the lower electrode 60. The mask unit 200 can change the area of the lower electrode 60 exposed from the center C60 toward the outer edge by adjusting the aperture of the shutter portion SH3. The aperture of the shutter portion SH3 is determined when the tip of the plate-shaped member 210 closest to the center C60 is in contact with the rear surface of the lower electrode 60. Then, the gas introduction unit 30 flows a process gas while the tip of the plate-shaped member 210 is in contact with the rear surface of the lower electrode 60. By forming the material film TF using such a mask unit 200, a material film TF having a thickness that varies in parts can be formed on the first surface F1 of the substrate. For example, the material film TF is first deposited on the substrate W with the apertures shown in FIGS. 26 and 27, then with the apertures shown in FIGS. 28 and 29, and finally with the apertures shown in FIGS. 30 and 31. As a result, the material film TF is formed relatively thick at the center of the substrate W and relatively thin toward the edges. As a result, the apparatus 1 according to the fifth embodiment can appropriately correct the warping of the substrate W by forming the material film TF even if the substrate W is warped in a bowl-like or mountain-like shape in both the X and Y directions from the center to the outer edge. The other configurations of the fifth embodiment may be similar to those of the second embodiment.

[0090] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, as well as within the scope of the invention described in the claims and their equivalents. [Explanation of symbols]

[0091] REFERENCE SIGNS LIST 1 semiconductor manufacturing equipment, 10 chamber, 20 carrier ring, 30 gas inlet, 40 first gas distribution plate, 50 second gas distribution plate, 60 lower electrode, 70 partition plate, 80 upper electrode, 90 support, 100 control unit, 110, 130 gas supply source, 120, 140 piping

Claims

1. A processing vessel; a holder provided in the processing chamber and capable of holding a substrate; a gas inlet portion provided on a first surface side of the substrate and configured to introduce a process gas into the processing chamber; a first gas supply plate provided between the substrate and the gas inlet, the first gas supply plate having a plurality of first holes for allowing the process gas to pass therethrough; a first electrode provided between the substrate and the first gas supply plate, the first electrode having a plurality of second holes for supplying the process gas to the first surface of the substrate; a second electrode provided on a second surface of the substrate opposite to the first surface, the second electrode applying an electric field to the process gas between the first and second electrodes; a mask portion provided between the first electrode and the first gas supply plate, the mask portion blocking communication between the first gas supply plate and the second holes of the plurality of second holes that are located outside at least a central portion of the first electrode, in a space between the first electrode and the first gas supply plate; the first electrode and the mask portion have a substantially rectangular shape with four sides equal to or larger than a diameter of the substrate when viewed from a direction perpendicular to the first surface, the mask unit includes a first shutter unit that can be opened and closed from a center line of the first electrode toward a first side of the first electrode, and a second shutter unit that can be opened and closed from the center line toward an opposite side of the first side of the first electrode.

2. A semiconductor manufacturing apparatus as described in claim 1, wherein the first and second shutter portions open the second holes among the plurality of second holes that are located at least in the center of the first electrode into the space between the first electrode and the first gas supply plate.

3. A processing vessel, a holder provided in the processing chamber and capable of holding a substrate; a gas inlet portion provided on a first surface side of the substrate and configured to introduce a process gas into the processing chamber; a first gas supply plate provided between the substrate and the gas inlet, the first gas supply plate having a plurality of first holes for allowing the process gas to pass therethrough; a first electrode provided between the substrate and the first gas supply plate, the first electrode having a plurality of second holes for supplying the process gas to the first surface of the substrate; a second electrode provided on a second surface of the substrate opposite to the first surface, the second electrode applying an electric field to the process gas between the first and second electrodes; a mask portion provided between the first electrode and the first gas supply plate, the mask portion blocking communication between the first gas supply plate and the second holes of the plurality of second holes that are located outside at least a central portion of the first electrode, in a space between the first electrode and the first gas supply plate; the first electrode and the mask portion have a substantially circular shape with a diameter equal to or larger than a diameter of the substrate when viewed in a direction perpendicular to the first surface, The mask unit includes a shutter unit that can be opened and closed from the center of the first electrode toward the outer edge of the first electrode.

4. A semiconductor manufacturing apparatus as described in Claim 3, wherein the shutter portion opens the second hole among the plurality of second holes that is located at least in the center of the first electrode into the space between the first electrode and the first gas supply plate.

Images