Substrate processing apparatus, semiconductor device manufacturing method, substrate processing method and program

Abstract

To provide technology that makes it possible to perform uniform substrate processing.SOLUTION: It has a processing chamber for processing substrates, an electromagnetic wave generator that supplies electromagnetic waves to the processing chamber, and a gas supply unit that supplies cooling gas to the substrates by adjusting a direction in which the cooling gas is supplied.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a program. [Background technology]

[0002] One of the manufacturing processes for semiconductor devices is, for example, annealing, which involves heating a substrate in a processing chamber using a heating device to change the composition and crystalline structure of a thin film formed on the surface of the substrate (for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-70045 Summary of the Invention [Problem to be solved by the invention]

[0004] Annealing may not heat the substrate uniformly, resulting in inconsistent processing of the target film.

[0005] The present disclosure provides techniques that allow for uniform substrate processing. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, a processing chamber for processing a substrate; an electromagnetic wave generator that supplies electromagnetic waves into the processing chamber; a gas supply unit that adjusts a direction in which a cooling gas is supplied to supply the cooling gas to the substrate; A technique is provided that includes: [Effects of the Invention]

[0007] According to the present disclosure, it is possible to perform uniform substrate processing. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a schematic configuration diagram of a single-wafer processing furnace of a substrate processing apparatus suitably used in a first embodiment of the present disclosure, showing a processing furnace portion in vertical cross section. [Figure 2] FIG. 1 is a schematic configuration diagram of a controller of a substrate processing apparatus preferably used in the present disclosure. [Figure 3] 1 is a diagram showing a flow of substrate processing in the present disclosure. [Figure 4] FIG. 1 is a diagram showing the relationship between carrier density and temperature of a substrate according to the present disclosure. [Figure 5] FIG. 2 is a schematic configuration diagram of a gas supply unit according to the present disclosure. [Figure 6] 6A is a top view showing the gas flow when the gas flow rate from nozzle 105a is greater than the gas flow rate from nozzle 105b in the gas supply unit shown in Fig. 5. (b) is a top view showing the gas flow when the gas flow rate from nozzle 105a is equal to the gas flow rate from nozzle 105b in the gas supply unit shown in Fig. 5. (c) is a top view showing the gas flow when the gas flow rate from nozzle 105a is less than the gas flow rate from nozzle 105b in the gas supply unit shown in Fig. 5. [Figure 7] 1A is a diagram showing a first modified example of the first embodiment of the present disclosure, and FIG. 1B is a diagram showing a second modified example of the first embodiment of the present disclosure. [Figure 8] FIG. 10 is a schematic configuration diagram of a single-wafer processing furnace of a substrate processing apparatus suitably used in a second embodiment of the present disclosure, showing a processing furnace portion in vertical cross section. DETAILED DESCRIPTION OF THE INVENTION

[0009] First Embodiment of the Present Disclosure A first embodiment of the present disclosure will be described below mainly with reference to Figures 1 to 5, 6(a) to 6(c), 7(a) and 7(b). Note that the drawings used in the following description are all schematic, and the dimensional relationships, ratios, etc. of the elements shown in the drawings do not necessarily match those of reality. Furthermore, the dimensional relationships, ratios, etc. of the elements between multiple drawings do not necessarily match.

[0010] (1) Configuration of the substrate processing equipment In this embodiment, a substrate processing apparatus 100 according to the present disclosure is configured as a single-wafer heat processing apparatus that performs various heat treatments on wafers as substrates.

[0011] (Processing chamber) As shown in FIG. 1, the substrate processing apparatus 100 according to this embodiment includes a case 102 serving as a cavity made of a material that reflects electromagnetic waves, such as metal, and a cylindrical reaction tube 103 housed inside the case 102 and open at both the top and bottom ends in the vertical direction. The reaction tube 103 is made of a material that transmits electromagnetic waves, such as quartz. A cap flange (closure plate) 104 made of a metallic material abuts against the upper end of the reaction tube 103 via an O-ring 220 serving as a sealing member, thereby closing the upper end of the reaction tube. The case 102, the reaction tube 103, and the cap flange 104 mainly constitute a processing vessel for processing substrates such as silicon wafers, and the inner space of the reaction tube 103 in particular constitutes a processing chamber 201.

[0012] A mounting table 210 is provided below the reaction tube 103, and a boat 217 serving as a substrate holder (substrate holder) for holding wafers 200 is mounted on the upper surface of the mounting table 210. The boat 217 holds the wafer 200 to be processed and insulating plates 101a and 101b, which are formed of, for example, a quartz plate or a silicon plate (Si plate) such as a dummy wafer, above and below the wafer 200 to maintain the temperature of the wafer 200. The insulating plates 101a and 101b sandwich the wafer 200 at a predetermined distance. A protrusion (not shown) protruding radially from the bottom of the mounting table 210 is provided on the sidewall of the mounting table 210. This protrusion comes close to or comes into contact with a partition plate (not shown) provided between the processing chamber 201 and a transfer space 203 (described later), thereby preventing the atmosphere in the processing chamber 201 from moving into the transfer space 203 and the atmosphere in the transfer space 203 from moving into the processing chamber 201.

[0013] Here, a plurality of heat insulating plates 101a, 101b may be installed depending on the substrate processing temperature. Installing a plurality of heat insulating plates in this manner makes it possible to suppress heat dissipation in the area where the wafers 200 are placed, thereby improving the temperature uniformity within or between the surfaces of the wafers 200. Furthermore, a measurement window for a temperature sensor 263 is provided on the end plate (ceiling plate) of the boat 217, and the temperature sensor 263 measures the surface temperature of the heat insulating plate 101a, and the processing temperature of the wafers 200 is controlled based on the measured temperature. In this specification, the processing temperature refers to the temperature of the wafers 200 or the temperature inside the processing chamber 201.

[0014] The case 102 serving as the upper container has, for example, a circular cross section and is configured as a flat, sealed container. The transfer container 202 serving as the lower container is configured from, for example, a metal material such as aluminum (Al) or stainless steel (SUS), or quartz. A transfer space 203 is formed below the processing container to transfer wafers 200 such as silicon wafers as substrates. The space surrounded by the case 102 or the reaction tube 103 and above the bottom of the case 102 is referred to as the processing chamber 201 or reaction area 201. The space surrounded by the transfer container 202 and below the bottom of the case 102 is sometimes referred to as the transfer area 203.

[0015] A substrate loading / unloading port 206 adjacent to a gate valve 205 is provided on the side of the transfer container 202, and the wafer 2 is transferred between the transfer container 202 and a substrate transfer chamber (not shown) via the substrate loading / unloading port 206.

[0016] Electromagnetic wave introduction ports 653-1 and 653-2 are drilled in the side surface of the case 102. One ends of waveguides 654-1 and 654-2 for supplying microwaves into the processing chamber 201 are connected to the electromagnetic wave introduction ports 653-1 and 653-2, respectively. Microwave oscillators (electromagnetic wave sources) 655-1 and 655-2 serving as heating sources for supplying electromagnetic waves into the processing chamber 201 to heat it are connected to the other ends of the waveguides 654-1 and 654-2, respectively.

[0017] Here, when giving a general explanation, the electromagnetic wave introduction ports 653-1, 653-2, the waveguides 654-1, 654-2, and the microwave oscillators 655-1, 655-2 will be referred to as the electromagnetic wave introduction port 653, the waveguide 654, and the microwave oscillator 655, respectively.

[0018] The mounting table 210 is supported by a shaft 255 serving as a rotation axis. The shaft 255 penetrates the bottom of the transfer container 202 and is further connected to a drive mechanism 267 that rotates and elevates the shaft 255 outside the transfer container 202. By operating the drive mechanism 267 to rotate and elevate the shaft 255 and the mounting table 210, it is possible to rotate or elevate the wafer 200 mounted on the boat 217. The lower end of the shaft 255 is covered with a bellows 212, and the insides of the processing chamber 201 and the transfer space 203 are kept airtight.

[0019] When the wafer 200 is being transported, the mounting table 210 is lowered so that the top surface of the mounting table is positioned at the substrate loading / unloading port 206 (wafer transport position), and when the wafer 200 is being processed, the wafer 200 is raised to a processing position (wafer processing position) within the processing chamber 201, as shown in FIG.

[0020] (Exhaust section) An exhaust unit that exhausts the atmosphere in the processing chamber 201 is provided below the processing chamber 201 and on the outer periphery of the mounting table 210. As shown in Fig. 1, the exhaust unit is provided with an exhaust port 221. An exhaust pipe 231 is connected to the exhaust port 221, and a pressure regulator 244 such as an APC valve that controls the valve opening depending on the pressure inside the processing chamber 201 and a vacuum pump 246 are connected in series to the exhaust pipe 231.

[0021] Here, the pressure regulator 244 is not limited to an APC valve, and may be configured to use a normal opening / closing valve and a pressure regulation valve in combination, as long as it can receive pressure information (feedback signal from a pressure sensor 245, described later) within the processing chamber 201 and adjust the exhaust rate.

[0022] An exhaust unit (also referred to as an exhaust system or an exhaust line) is mainly composed of the exhaust port 221, the exhaust pipe 231, and the pressure regulator 244. An exhaust path may be provided to surround the processing chamber 201, allowing gas to be exhausted from the entire periphery of the wafer 200. A vacuum pump 246 may also be added to the exhaust unit.

[0023] (Gas supply section) A nozzle 105a as a first nozzle and a nozzle 105b as a second nozzle are provided inside the reaction tube 103 through the underside of the case 102. The nozzles 105a and 105b supply various process gases for substrate processing, such as an inert gas, a source gas, and a reactive gas, into the process chamber 201. Gas supply pipes 232a and 232b are connected to the nozzles 105a and 105b. Mass flow controllers (MFCs) 241a and 241b, which are flow rate controllers (flow rate control units), and valves 243a and 243b, which are on-off valves, are provided on the gas supply pipes 232a and 232b, in this order from upstream to downstream. An inert gas source, for example, is connected to the upstream side of the gas supply pipes 232a and 232b, and the inert gas is supplied into the process chamber 201 via the MFCs 241a and 241b, the valves 243a and 243b, and the nozzles 105a and 105b. The inert gas is used as a cooling gas for cooling the wafer 200, as described below. When multiple types of gases are used during substrate processing, multiple nozzles may be independently provided according to the types of gases to be used. A gas supply unit (also referred to as a gas supply system) is mainly composed of gas supply pipes 232a and 232b, MFCs 241a and 241b, and valves 243a and 243b. Nozzles 105a and 105b and an arc-shaped plate 107, which will be described later, may also be included in the gas supply unit.

[0024] (nozzle) As shown in FIG. 5, an arc-shaped plate 107 is provided as a curved portion between nozzles 105a and 105b. Nozzles 105a and 105b and arc-shaped plate 107 are made of, for example, quartz. Gas supply holes 106a and 106b for supplying gas are provided on the side surfaces of nozzles 105a and 105b. Gas supply holes 106a and 106b open toward arc-shaped plate 107 (the tangent direction of the arc of arc-shaped plate 107) and supply gas parallel to the surface of wafer 200. These gas supply holes 106a and 106b are configured as slits or rows of multiple holes provided from the bottom to the top of reaction tube 103. When multiple rows of holes are provided, each hole has the same opening area and is arranged at the same opening pitch.

[0025] The gas supply unit can adjust the direction of gas supply by controlling the gas flow rate, which will be explained using Figures 5 and 6(a) to 6(c).

[0026] 5, first gas 108a and second gas 108b are ejected from gas supply holes 106a and 106b of nozzles 105a and 105b serving as gas supply unit 110 in the tangential direction of the arc of arc-shaped plate 107, and are supplied along the surface of arc-shaped plate 107 due to the Coanda effect. Arc-shaped plate 107 is curved so as to be convex toward wafer 200, so that third gas 108c, which is a combination of first gas 108a and second gas 108b, is ejected toward wafer 200 along the normal direction of the surface of arc-shaped plate 107. Third gas 108c is supplied between insulating plate 101a and wafer 200 and between insulating plate 101b and wafer 200. When boat 217 holds multiple wafers 200 in a multi-tiered arrangement, third gas 108c is supplied between wafers 200. The ejection direction of the third gas 108c can be adjusted by adjusting the flow rates of the first gas 108a and the second gas 108b with the MFCs 241a and 241b.

[0027] For example, as shown in FIG. 6(a), when the flow rate of the first gas 108a ejected from the nozzle 105a is greater than the flow rate of the second gas 108b ejected from the nozzle 105b, the third gas 108c is ejected in a direction to the left (toward the nozzle 105b) of the center direction of the wafer 200 (the direction of the arrow C).

[0028] As shown in FIG. 6(b), when the flow rate of the first gas 108a ejected from the nozzle 105a is equal to the flow rate of the second gas 108b ejected from the nozzle 105b, the third gas 108c is ejected toward the center of the wafer 200 (in the direction of arrow C).

[0029] As shown in FIG. 6(c), when the flow rate of the first gas 108a sprayed from the nozzle 105a is smaller than the flow rate of the second gas 108b sprayed from the nozzle 105b, the third gas 108c is sprayed in a direction to the right (toward the nozzle 105a) of the center of the wafer 200 (the direction of arrow C).

[0030] Because the third gas 108c is a combination of the first gas 108a and the second gas 108b, the flow rate of the third gas 108c is greater than the larger of the flow rates of the first gas 108a and the second gas 108b. If the flow rate of the first gas 108a is FA, the flow rate of the second gas 108b is FB, and the flow rate of the third gas 108c is FC, then FC = FA + FB - α, where α is the amount of loss.

[0031] (Temperature sensor) A temperature sensor 263 is installed on the cap flange 104 as a non-contact temperature detector (measurement unit). The output of a microwave oscillator 655 (described later) and the aperture of MFCs 241a and 241b are adjusted based on the temperature information detected by the temperature sensor 263, thereby heating the substrate and achieving a desired temperature distribution of the substrate temperature. The temperature sensor 263 is configured by a radiation thermometer such as an IR (Infrared Radiation) sensor, for example.

[0032] The method for measuring the substrate temperature is not limited to the radiation thermometer described above, and temperature measurement may be performed using a thermocouple, or a combination of a thermocouple and a radiation thermometer. However, when temperature measurement is performed using a thermocouple, it is necessary to place the thermocouple near the processing wafer 200 to measure the temperature in order to improve the temperature measurement accuracy of the thermocouple. For this reason, it is preferable to use a radiation thermometer as the temperature sensor 263, since the thermocouple itself will be heated by microwaves supplied from a microwave oscillator described later.

[0033] Furthermore, the temperature sensor 263 is not limited to being provided on the cap flange 104, but may be provided on the mounting table 210. This configuration makes it possible to use a reaction tube whose upper end is closed, thereby reducing the possibility of leakage of microwaves, processing gas, etc. supplied to the processing chamber 201.

[0034] Furthermore, the temperature sensor 263 may not only be directly installed on the cap flange 104 or the mounting table 210, but may also be configured to measure indirectly by reflecting, with a mirror or the like, the light emitted from a measurement window provided on the cap flange 104 or the mounting table 210. By configuring it in this way, it becomes possible to alleviate restrictions on the location where the temperature sensor 263 can be installed.

[0035] (Microwave supply unit) Electromagnetic wave introduction ports 653-1 and 653-2 are installed on the sidewall of the case 102. One end of waveguides 654-1 and 654-2 for supplying electromagnetic waves into the processing chamber 201 is connected to the electromagnetic wave introduction ports 653-1 and 653-2, respectively. The other end of the waveguides 654-1 and 654-2 is connected to microwave oscillators (electromagnetic wave sources, electromagnetic wave generators) 655-1 and 655-2, respectively, which serve as heating sources for supplying electromagnetic waves into the processing chamber 201 to heat the interior. The microwave oscillators 655-1 and 655-2 supply electromagnetic waves such as microwaves to the waveguides 654-1 and 654-2, respectively. The microwave oscillators 655-1 and 655-2 may be magnetrons, klystrons, or the like. The frequency of the electromagnetic waves generated by microwave oscillator 655 is preferably controlled to be in the frequency range of 13.56 MHz to 24.125 GHz, and more preferably to be 2.45 GHz or 5.8 GHz.

[0036] Furthermore, in this embodiment, two microwave oscillators 655 are arranged on the side surface of case 102, but this is not limitative and it is sufficient that one or more oscillators are provided.

[0037] Furthermore, microwave oscillators 655 may be arranged so as to be provided on different side surfaces, such as opposing side surfaces, of case 102. This configuration makes it possible to prevent the occurrence of regions on wafer 200 where microwaves, which will be described later, are partially absorbed. In other words, it becomes possible to prevent wafer 200 from being partially heated, and it becomes possible to improve the in-plane temperature uniformity of wafer 200.

[0038] The heating device as a microwave supply unit (electromagnetic wave supply device, electromagnetic wave supply unit, microwave supply device) is mainly configured by microwave oscillators 655-1 and 655-2, waveguides 654-1 and 654-2, and electromagnetic wave introduction ports 653-1 and 653-2.

[0039] A controller 121, which will be described later, is connected to each of the microwave oscillators 655-1 and 655-2. A temperature sensor 263, which measures the temperature of the heat insulating plate 101a or 101b or the wafer 200 housed in the processing chamber 201, is connected to the controller 121. The temperature sensor 263 measures the temperature of the heat insulating plate 101a or 101b or the wafer 200 and transmits the measured temperature to the controller 121, which then controls the output of the microwave oscillators 655-1 and 655-2, thereby controlling the heating of the wafer 200.

[0040] Here, microwave oscillators 655-1 and 655-2 are controlled by the same control signal transmitted from controller 121. However, without being limited to this, microwave oscillators 655-1 and 655-2 may be configured to be individually controlled by transmitting individual control signals from controller 121 to microwave oscillators 655-1 and 655-2, respectively.

[0041] (Control device) 2, controller 121, which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, storage device 121c, and I / O port 121d. RAM 121b, storage device 121c, and I / O port 121d are configured to be able to exchange data with CPU 121a via internal bus 121e. An input / output device 122 configured as, for example, a touch panel is connected to controller 121.

[0042] The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), etc. The storage device 121c readably stores a control program for controlling the operation of the substrate processing apparatus, as well as etching recipes and process recipes that describe procedures and conditions for nozzle etching and film formation processes (described later). The etching recipes and process recipes are combined to cause the controller 121 to execute each procedure in the substrate processing steps (described later) to obtain a predetermined result, and function as a program. Hereinafter, the process recipes and control programs are collectively referred to simply as "programs." The etching recipes and process recipes are also simply referred to as "recipe." In this specification, the term "program" may refer to a recipe alone, a control program alone, or both. The RAM 121b is configured as a memory area (work area) for temporarily storing programs, data, etc. read by the CPU 121a.

[0043] The I / O port 121d is connected to the above-mentioned MFCs 241a and 241b, valves 243a and 243b, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, drive mechanism 267, microwave oscillator 655, and the like.

[0044] The CPU 121a is configured to read and execute a control program from the storage device 121c, and also to read a recipe from the storage device 121c in response to input of an operation command from the input / output device 122. The CPU 121a is configured to be able to control, in accordance with the contents of the read recipe, the flow rate adjustment operation of various gases by the MFCs 241a and 241b, the opening and closing operation of the valves 243a and 243b, the opening and closing operation of the APC valve 244 and the pressure adjustment operation by the APC valve 244 based on the pressure sensor 245, the start and stop of the vacuum pump 246, the output adjustment operation of the microwave oscillator based on the temperature sensor 263, the rotation and rotation speed adjustment operation or the lifting and lowering operation of the mounting table 210 (or the boat 217) by the drive mechanism 267, etc.

[0045] The controller 121 can be configured by installing the above-mentioned program stored in an external storage device (for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card) 123 into a computer. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to simply as recording media. When the term recording media is used in this specification, it may include only the storage device 121c alone, only the external storage device 123 alone, or both. Note that the program may be provided to the computer using a communication means such as the Internet or a dedicated line, without using the external storage device 123.

[0046] (2) Substrate processing process Next, an example of a method for modifying (crystallizing) an amorphous silicon film, for example, a silicon (Si)-containing film formed on a substrate, as one step in a manufacturing process of a semiconductor device using the processing furnace of the above-described substrate processing apparatus 100 will be described with reference to the processing flow shown in Fig. 3. In the following description, the operation of each part constituting the substrate processing apparatus 100 is controlled by a controller 121.

[0047] Here, when the word "wafer" is used in this specification, it may mean "the wafer (product wafer) itself" or "a laminate (assembly) of a wafer and a predetermined layer, film, etc. formed on its surface." In other words, when the wafer is referred to as including a predetermined layer, film, etc. formed on the surface, it may mean a "target substrate (target wafer)" described below, a "dummy substrate (dummy wafer)" described below, or "both the target substrate (target wafer) and the dummy substrate (dummy wafer)." Furthermore, when the word "surface of a wafer" is used in this specification, it may mean "the surface (exposed surface) of the wafer itself" using the definition of "wafer" above, or "the surface of a predetermined layer, film, etc. formed on the wafer, i.e., the outermost surface of the wafer as a laminate."

[0048] Therefore, in this specification, when it is stated that "a predetermined gas is supplied to a wafer," it may mean "supplying a predetermined gas to the surface (exposed surface) of the wafer itself," using the definition of "wafer" above, or it may mean "supplying a predetermined gas to a layer, film, etc. formed on the wafer, i.e., to the outermost surface of the wafer as a laminate." Furthermore, in this specification, when it is stated that "a predetermined layer (or film) is formed on a wafer," it may mean "forming a predetermined layer (or film) on the surface (exposed surface) of the wafer itself," or it may mean "forming a predetermined layer (or film) on a layer, film, etc. formed on the wafer, i.e., on the outermost surface of the wafer as a laminate."

[0049] Furthermore, in this specification, the term "substrate" is synonymous with the term "wafer."

[0050] (S301: Substrate loading process) As shown in FIG. 1, when a predetermined number of wafers 200 are transferred to the boat 217, the driving mechanism 267 lifts the mounting table 210 to load the boat 217 into the processing chamber 201 inside the reaction tube 103 (boat loading).

[0051] (S302: Furnace pressure / temperature adjustment process) After the boat 217 has been loaded into the processing chamber 201, the atmosphere in the processing chamber 201 is controlled so that the pressure inside the processing chamber 201 is set to a predetermined pressure (for example, 10 to 102,000 Pa). Specifically, while exhausting the air with the vacuum pump 246, the valve opening of the pressure regulator 244 is feedback-controlled based on pressure information detected by the pressure sensor 245, so that the pressure inside the processing chamber 201 is set to the predetermined pressure. At the same time, a microwave supply unit may be controlled as preheating, so that heating is performed up to a predetermined temperature. In this specification, when a numerical range is expressed, such as "10 to 102,000 Pa," it means that the lower limit and upper limit are included in the range. For example, "10 to 102,000 Pa" means "10 Pa or more and 102,000 Pa or less." The same applies to other numerical ranges.

[0052] (S303: Inert gas supply process) The driving mechanism 267 rotates the shaft 255 to rotate the wafer 200 via the boat 217 on the mounting table 210. At this time, an inert gas is supplied from the nozzles 105a and 105b via the gas supply pipes 232a and 232b. The pressure inside the processing chamber 201 is adjusted to a predetermined value in the range of 0 Pa to 200,000 Pa, for example, 101,300 Pa to 101,600 Pa.

[0053] Examples of inert gases that can be used include rare gases such as nitrogen (N) gas, argon (Ar) gas, helium (He) gas, neon (Ne) gas, and xenon (Xe) gas. This also applies to the processes described below.

[0054] (S304: Substrate processing process) When the inside of the processing chamber 201 is maintained at a predetermined pressure, the microwave generators 655-1 and 655-2 heat the wafer 200 to a temperature range of 100°C to 700°C. Preferably, the wafer 200 is heated to a temperature range of 200°C to 600°C, and more preferably, to a temperature range of 200°C to 400°C. If the wafer 200 is processed at a temperature lower than 100°C or higher than 700°C, the wafer 200 will have difficulty absorbing microwaves, and the wafer 200 will not be heated efficiently.

[0055] The temperature of the wafer 200 is estimated from the surface temperature of the heat insulating plate 101a measured by the temperature sensor 263, using temperature conversion data stored in advance in the storage device 121c or the external storage device 122. Microwave oscillators 655-1 and 655-2 supply microwaves from electromagnetic wave introduction ports 653-1 and 653-2 into the processing chamber 201 via waveguides 654-1 and 654-2. The microwaves supplied into the processing chamber 201 are incident on the wafer 200 and are efficiently absorbed, making it possible to heat the wafer 200 extremely effectively.

[0056] By controlling the microwave oscillator 655, the wafer 200 is heated to the predetermined processing temperature, and the processing temperature is maintained for a predetermined time. By controlling the microwave oscillator 655 in this manner, the amorphous silicon film formed on the surface of the microwave wafer 200 is modified.

[0057] Here, in order to efficiently heat the wafer 200, i.e., to enable the wafer 200 to efficiently absorb microwaves, it is necessary to consider the carrier density and carrier temperature dependency of the wafer 200. As shown in FIG. 4, an example of the temperature dependency of the carrier density of the wafer 200 is shown, with the vertical axis representing carrier density (proportional to conductivity) (ln n) and the horizontal axis representing temperature (1 / T). The wafer 200 can be divided into regions (A), (B), and (C) based on temperature. When the wafer 200 is a silicon (Si) substrate, for example, the temperature dividing regions (A) and (B) is 327°C, and the temperature dividing regions (B) and (C) is −73°C. As is clear from FIG. 4, the carrier density in regions (A) and (C) increases significantly with increasing temperature, but the carrier density in region (B) does not increase significantly even when the temperature increases.

[0058] Since the amount of heat generated per unit time of the wafer 200 is proportional to the carrier density of the wafer 200, fluctuations in the carrier density result in changes in the amount of heat generated. Therefore, when microwave heating is performed in the region (A) where the carrier density changes greatly, the rate at which the carrier density increases in response to temperature changes is large, and therefore, even if the power of the microwaves irradiated is the same, the rate at which the temperature of the wafer 200 rises increases. Therefore, it is preferable to perform microwave heating in the region (A).

[0059] Furthermore, since the temperature rise rate of the wafer 200 is high in the region (A) as described above, when microwaves are locally concentrated, the concentrated area becomes hot, causing a large temperature difference in part within the surface of the wafer 200, and the difference in thermal expansion causes deformation of the wafer 200. Therefore, by cooling the wafer 200 while heating it with microwaves in the temperature range of the region (A), it is possible to reduce the temperature difference within the surface of the wafer 200, suppress deformation of the wafer 200, and improve the modification processing speed of the wafer 200.

[0060] The gas supply unit may be controlled in accordance with the temperature measured by the temperature sensor 263 or the temperature estimated by the previously stored temperature conversion data. That is, when the temperature of the heated wafer 200 exceeds a predetermined target temperature, the opening of the gas supply unit, specifically, the MFCs 241a and 241b, is increased to increase the flow rate of the cooling gas, thereby cooling the wafer 200. Conversely, when the temperature of the wafer 200 falls below the predetermined target temperature, the opening of the MFCs 241a and 241b is decreased to decrease the flow rate of the cooling gas, thereby heating the wafer 200. By controlling the microwave supply unit and the gas supply unit in this manner, it is possible to simplify the temperature control of the wafer 200, since it is sufficient to control only the gas supply unit in detail.

[0061] For example, it is preferable to control the MFCs 241a and 241b so that the flow rate of the cooling gas (flow rate of the third gas 108c) is 1 slm or more and 50 slm or less. If the flow rate of the cooling gas is 1 slm or less, the cooling gas does not reach the wafers 200. If the flow rate of the cooling gas is 50 slm or more, the cooling gas is wasted or the wafers 200 are overcooled.

[0062] Furthermore, the flow rate may be controlled by the MFCs 241a and 241b based on the temperature measured by the temperature sensor 263 or the temperature estimated from the previously stored temperature conversion data, thereby adjusting the supply direction of the cooling gas so that the cooling gas is supplied toward the location on the wafer 200 where the temperature is highest. This makes it possible to adjust the in-plane uniformity.

[0063] By heat-treating the wafer 200 as described above, the amorphous silicon film formed on the surface of the wafer 200 is modified (crystallized) into a polysilicon film. In other words, the wafer 200 can be modified uniformly.

[0064] When a preset processing time has elapsed, the rotation of the boat 217, the supply of gases, the supply of microwaves, and the exhaust of the exhaust pipe are stopped.

[0065] After the substrate processing step is completed, an inert gas is supplied to return the pressure inside the processing chamber 201 to atmospheric pressure.

[0066] (S305: Board unloading process) After the pressure inside the processing chamber 201 is returned to atmospheric pressure, the driving mechanism 267 lowers the mounting table 210 to open the furnace port and unload the boat 217 into the transfer space 203 (boat unloading). Thereafter, the wafers 200 placed on the boat are unloaded into a transfer chamber located outside the transfer space 203.

[0067] By repeating the above operations, the wafer 200 is modified.

[0068] (3) Effects of this embodiment This embodiment provides one or more of the following advantages.

[0069] (a) The direction in which the cooling gas is ejected can be adjusted, which makes it possible to improve the temperature uniformity within the wafer surface.

[0070] (b) The direction of gas ejection is changed depending on the gas flow rate, so adjustments can be made using the control unit. This makes it possible to ensure more repeatable nozzle direction than when adjusting the nozzle direction manually.

[0071] (c) Since the gas ejection direction is adjusted by the gas flow rate, a mechanical mechanism (i.e., a mechanically movable part) for changing the nozzle direction is not required. This makes it possible to suppress the influence of a mechanical mechanism installed inside the reaction tube 103 on the electromagnetic field distribution of the microwave.

[0072] (4) Modification of the First Embodiment The substrate processing apparatus of this embodiment is not limited to the above-described aspects, and can be modified as shown in the following modified examples. In this modified example, components having the same functions as those of the first embodiment are given the same reference numerals, and descriptions thereof will be omitted.

[0073] (Variation 1) As shown in FIG. 7( a), Modification 1 of the first embodiment is configured such that a boat 217 can hold multiple wafers 200 in multiple stages. Specifically, multiple wafers 200 are held horizontally in multiple stages at predetermined intervals between insulating plates 101a and 101b held by the boat 217, and the multiple wafers 200 held in the boat 217 are uniformly processed in the order of the substrate processing steps described above. This configuration enables multiple wafers 200 to be processed in one process, thereby improving the throughput of substrate processing. The gas supply holes 106a and 106b are configured as slits or rows of multiple holes extending from the bottom to the top of the reaction tube 103, and gas is supplied between the wafers 200 from the nozzles 105a and 105b and the arc-shaped plate 107. This improves the temperature uniformity between the wafers.

[0074] 7(a), the plurality of wafers 200 are held by being sandwiched between the heat insulating plates 101a and 101b. However, this is not limiting and each of the plurality of wafers 200 may be sandwiched and held between the plurality of heat insulating plates 101a and 101b. In this case, a plurality of heat insulating plates 101a and 101b are also provided. This configuration not only makes it possible to heat the wafers 200 more quickly than in the first embodiment, but also improves the temperature uniformity within the wafer surface.

[0075] (Variation 2) As shown in FIG. 7(b), Modification 2 of the first embodiment is configured such that an exhaust nozzle 601 for exhaust is installed at a position facing the nozzle 105 across the boat 217. An exhaust port for exhausting the atmosphere inside the processing chamber 201 is provided on the side of the exhaust nozzle 601 facing the gas supply nozzle, and an exhaust pipe 231 is connected downstream of the exhaust nozzle 601. With this configuration, even when the pressure inside the processing chamber 201 is atmospheric pressure or slightly increased, it is possible to supply cooling gas horizontally from the side of the wafer, forming a horizontal gas flow, and thereby uniformly cooling the wafer 200. This makes it possible to improve the temperature uniformity within the wafer surface.

[0076] Second Embodiment of the Present Disclosure Next, a second embodiment of the present disclosure will be described with reference to FIG.

[0077] In the second embodiment, the substrate processing apparatus of the present disclosure differs from the first embodiment in that the gas supply unit does not have two nozzles and an arc-shaped plate, but has a rotation unit 268 that rotates the nozzle 105 as the gas supply unit. Note that in this embodiment, components having the same functions as those in the first embodiment are given the same reference numerals, and descriptions thereof will be omitted.

[0078] In this embodiment, a nozzle 105 is provided inside the reaction tube 103 via the underside of the case 102 to supply various process gases for substrate processing, such as inert gas, source gas, and reactive gas, into the process chamber 201. Gas supply holes 106 are provided on the side of the nozzle 105 to supply gas. The gas supply holes 106 supply gas parallel to the surfaces of the wafers 200. The gas supply holes 106 are configured as slits or rows of holes extending from the bottom to the top of the reaction tube 103. When multiple rows of holes are provided, the holes have the same opening area and are arranged at the same opening pitch. Cooling gas ejected from the nozzle 105 is supplied between the insulating plate 101a and the wafers 200 and between the insulating plate 101b and the wafers 200. When the boat 217 holds multiple wafers 200 in multiple stages, the cooling gas is supplied between the wafers 200.

[0079] A gas supply pipe 232 is connected to the nozzle 105 via a rotating unit 268, which will be described later. The gas supply pipe 232 is provided with, in order from upstream, a mass flow controller (MFC) 241, which is a flow rate controller (flow rate control unit), and a valve 243, which is an on-off valve. An inert gas source, for example, is connected to the upstream side of the gas supply pipe 232, and the gas is supplied into the processing chamber 201 via the MFC 241 and the valve 243. When multiple types of gases are used during substrate processing, a gas supply pipe provided with an MFC and an open valve may be connected, in order from upstream, downstream of the valve 243 of the gas supply pipe 232, or multiple nozzles may be independently provided depending on the types of gases used. The gas supply pipe 232, the MFC 241, and the valve 243 mainly constitute a gas supply unit (also referred to as a gas supply system). At least one of the nozzle 105 and the rotating unit 268 may be included in the gas supply unit.

[0080] A rotating unit 268 that rotates the nozzle 105 is provided below the reaction tube 103 and on the outer periphery of the transfer vessel 202. The controller 121 can adjust the direction of the cooling gas ejected from the gas supply hole 106 by operating the rotating unit 268 to rotate the nozzle 105. The controller 121 can also adjust the direction of the cooling gas by controlling the rotating unit 268 based on the measurement result of the temperature sensor 263. This configuration not only achieves the same effects as the first embodiment, but also simplifies the control of the gas supply unit compared to the first embodiment without complicating the device structure inside the reaction tube 103. When a rotating unit, which is a mechanical mechanism, is not provided inside the reaction tube 103, it is possible to suppress the influence of microwaves on the electromagnetic field distribution.

[0081] While the present disclosure has been described above in accordance with the embodiments, the above-described embodiments and modifications can be used in appropriate combinations to obtain the same effects. The processing procedures and processing conditions in such combinations can be, for example, the same as those of the above-described aspects and modifications.

[0082] Furthermore, for example, in the above-described embodiments, a process for modifying an amorphous silicon film into a polysilicon film as a film mainly composed of silicon has been described. However, the present invention is not limited to this. A gas containing at least one of oxygen (O), nitrogen (N), carbon (C), and hydrogen (H) may be supplied to modify a film formed on the surface of the wafer 200. For example, when a hafnium oxide film (HfxOy film) serving as a high-dielectric film is formed on the wafer 200, oxygen missing in the hafnium oxide film can be replenished and the properties of the high-dielectric film can be improved by supplying microwaves while supplying a gas containing O and heating the hafnium oxide film. Furthermore, uncrystallized portions of the hafnium oxide film can be crystallized and the properties of the high-dielectric film can be improved by supplying microwaves while supplying nitrogen gas (N2 gas).

[0083] Although a hafnium oxide film has been described here, the present invention is not limited to this, and can be suitably applied to the formation of an oxide film containing a metal element including at least one of aluminum (Al), titanium (Ti), zirconium (Zr), tantalum (Ta), niobium (Nb), lanthanum (La), cerium (Ce), yttrium (Y), barium (Ba), strontium (Sr), calcium (Ca), lead (Pb), molybdenum (Mo), tungsten (W), etc., i.e., a metal-based oxide film. That is, the above-described film formation sequence can also be suitably applied to the case of forming a Ti film, a TiN film, a TiOCN film, a TiOC film, a TiON film, a TiO film, a ZrN film, a ZrOCN film, a ZrOC film, a ZrON film, a ZrO film, a HfOCN film, a HfOC film, a HfON film, a HfO film, a TaOCN film, a TaOC film, a TaON film, a TaO film, a NbOCN film, a NbOC film, a NbON film, a NbO film, an AlOCN film, an AlOC film, an AlON film, an AlO film, a MoOCN film, a MoOC film, a MoON film, a MoO film, a W film, a WOCN film, a WOC film, a WON film, or a WO film on the wafer 200.

[0084] Furthermore, not only high-dielectric-constant films but also films mainly composed of silicon doped with impurities may be heated. Examples of films mainly composed of silicon include Si-based oxide films such as SiN films, SiO films, SiOC films, SiOCN films, and SiON films, as well as Epi-Si films and Epi-SiGe films. The impurities may include at least one of boron (B), C, N, Al, phosphorus (P), gallium (Ga), and arsenic (As). In addition to the above-mentioned silicon-based films and metal oxide films, Epi-Ge films and films formed using Group 3-5 elements may also be heated.

[0085] Alternatively, the resist film may be based on at least one of polymethyl methacrylate (PMMA), epoxy resin, novolac resin, polyvinylphenyl resin, and the like.

[0086] Furthermore, although the above describes one step in the manufacturing process of a semiconductor device, the present invention is not limited to this and can also be applied to techniques for processing substrates, such as patterning processes in the manufacturing process of liquid crystal panels, patterning processes in the manufacturing process of solar cells, and patterning processes in the manufacturing process of power devices.

[0087] In the above-described embodiment, an example of forming a film using a single-wafer substrate processing apparatus that processes one or several substrates at a time has been described. The present disclosure is not limited to the above-described embodiment and can be suitably applied, for example, to a case where a film is formed using a batch-type substrate processing apparatus that processes several substrates at a time. Furthermore, in the above-described embodiment, an example of forming a film using a substrate processing apparatus having a cold-wall processing furnace has been described. The present disclosure is not limited to the above-described embodiment and can be suitably applied to a case where a film is formed using a substrate processing apparatus having a hot-wall processing furnace.

[0088] When using these substrate processing apparatuses, each process can be performed using the same processing procedures and conditions as in the above-described embodiments and modifications, and the same effects as in the above-described embodiments and modifications can be obtained. [Explanation of symbols]

[0089] 100 Substrate processing apparatus 110 Gas supply unit 201 Processing chamber 655···Microwave oscillator (electromagnetic wave generator)

Claims

1. a processing chamber for processing a substrate; an electromagnetic wave generator that supplies electromagnetic waves into the processing chamber; a gas supply unit that adjusts a direction in which a cooling gas is supplied to supply the cooling gas to the substrate; Equipped with The gas supply unit a first nozzle for supplying the cooling gas; a second nozzle for supplying the cooling gas; a curved portion between the first nozzle and the second nozzle; Equipped with the curved portion is an arc-shaped plate that is curved so as to be convex toward the substrate, A substrate processing apparatus further comprising a control unit configured to control the flow rate of the cooling gas supplied from the first nozzle and the second nozzle, thereby adjusting the direction of the cooling gas supplied to the substrate.

2. A substrate processing apparatus as described in claim 1, wherein the cooling gas is sprayed from the first nozzle and the second nozzle in a tangent direction to the arc of the arc-shaped plate.

3. The substrate processing apparatus according to claim 1 , wherein the first nozzle and the second nozzle supply the cooling gas in the direction of the curved portion.

4. The substrate processing apparatus according to claim 1 , wherein the gas supply unit supplies the cooling gas between the plurality of substrates.

5. a measuring unit for measuring the temperature of the substrate; The substrate processing apparatus according to claim 1 , wherein the control unit is configured to be able to adjust the direction of the cooling gas based on the measurement result of the measurement unit.

6. The substrate processing apparatus according to claim 5 , wherein the control unit is configured to measure the temperature of the substrate and supply the cooling gas toward a portion of the substrate where the temperature is high.

7. The substrate processing apparatus according to claim 4 , wherein the first nozzle and the second nozzle each have a plurality of holes so that the cooling gas can be supplied to a plurality of the substrates.

8. The substrate processing apparatus according to claim 4 , wherein the first nozzle and the second nozzle each have a slit so that the cooling gas can be supplied to a plurality of the substrates.

9. a step of supplying the electromagnetic waves into the processing chamber of a substrate processing apparatus, the processing chamber including: a processing chamber for processing a substrate; an electromagnetic wave generator for supplying electromagnetic waves into the processing chamber; and a gas supply unit for adjusting a direction in which a cooling gas is supplied to supply the cooling gas to the substrate, the gas supply unit including a first nozzle for supplying the cooling gas, a second nozzle for supplying the cooling gas, and a curved portion between the first nozzle and the second nozzle, the curved portion being an arc-shaped plate that is curved so as to be convex toward the substrate; supplying the cooling gas to the substrate by controlling the flow rates of the cooling gas supplied from the first nozzle and the second nozzle and adjusting the direction of the cooling gas supplied to the substrate; A method for manufacturing a semiconductor device comprising:

10. A process for supplying the electromagnetic waves into the processing chamber of a substrate processing apparatus, comprising: a processing chamber for processing substrates; an electromagnetic wave generator for supplying electromagnetic waves into the processing chamber; and a gas supply unit for adjusting the direction of supplying cooling gas to supply the cooling gas to the substrate, the gas supply unit comprising a first nozzle for supplying the cooling gas, a second nozzle for supplying the cooling gas, and a curved portion between the first nozzle and the second nozzle, the curved portion being an arc-shaped plate that is curved so as to be convex toward the substrate; supplying the cooling gas to the substrate by controlling the flow rates of the cooling gas supplied from the first nozzle and the second nozzle and adjusting the direction of the cooling gas supplied to the substrate; A substrate processing method comprising:

11. supplying the electromagnetic waves into the processing chamber of a substrate processing apparatus, the processing chamber comprising: a processing chamber for processing a substrate; an electromagnetic wave generator for supplying electromagnetic waves into the processing chamber; and a gas supply unit for adjusting a direction in which a cooling gas is supplied to supply the cooling gas to the substrate, the gas supply unit comprising: a first nozzle for supplying the cooling gas; a second nozzle for supplying the cooling gas; and a curved portion between the first nozzle and the second nozzle, the curved portion being an arc-shaped plate that is curved so as to be convex toward the substrate; a step of controlling the flow rates of the cooling gas supplied from the first nozzle and the second nozzle to adjust the direction of the cooling gas supplied to the substrate, thereby supplying the cooling gas to the substrate; A program for causing a computer to execute the above in the substrate processing apparatus.

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