Electrostatic chuck and semiconductor manufacturing equipment

Abstract

An electrostatic chuck and a semiconductor manufacturing apparatus are provided that can improve the uniformity of the temperature distribution within the surface of an object to be processed. [Solution] An electrostatic chuck comprising: a ceramic dielectric substrate, a base plate, and a heater section; the heater section having first and second heater elements; the second heater element having a plurality of main zones including a first main zone; the first heater element having a plurality of subzones, the number of which is greater than the number of main zones; the first main zone having a main heater line that generates heat when a current flows therethrough, and a first main power supply section that supplies power to the main heater line; the plurality of subzones having a first subzone overlapping with the first main zone; the first subzone having a central region located in the center of the first subzone and an outer circumferential region located outside the central region; and the first main power supply section being provided at a position overlapping with the central region.

Description

[Technical Field]

[0001] Aspects of the present invention generally relate to electrostatic chucks and semiconductor manufacturing equipment. [Background technology]

[0002] Electrostatic chucks are used in plasma processing chambers for etching, CVD (Chemical Vapor Deposition), sputtering, ion implantation, ashing, etc. to attract and hold objects to be processed, such as semiconductor wafers and glass substrates. Electrostatic chucks apply electrostatic attraction power to built-in electrodes to attract substrates, such as silicon wafers, by electrostatic force.

[0003] In recent years, there has been a demand for miniaturization and increased processing speed in IC chips containing semiconductor elements such as transistors. Accordingly, there is a demand for improved processing accuracy, such as etching, when forming semiconductor elements on wafers. Etching processing accuracy refers to whether or not wafer processing can form patterns with the designed width and depth. By improving processing accuracy, such as etching, semiconductor elements can be miniaturized and their integration density can be increased. In other words, improving processing accuracy enables chips to be made smaller and faster.

[0004] It is known that the accuracy of processing such as etching depends on the temperature of the wafer during processing. Therefore, in substrate processing equipment with an electrostatic chuck, it is necessary to control the temperature distribution within the wafer surface during processing in order to uniformize the etching rate. One method for controlling the temperature distribution within the wafer surface is to use an electrostatic chuck with a built-in heater (heating element).

[0005] In particular, in recent years, with the miniaturization of semiconductor elements, there is a demand for faster heating and more precise control of in-plane temperature distribution, and as a means to achieve this, a two-layer heater structure consisting of a main heater and a sub-heater is being considered (Patent Document 1). [Prior art documents] [Patent documents]

[0006] [Patent Document 1] International Publication No. 2016 / 080502 Summary of the Invention [Problem to be solved by the invention]

[0007] However, simply making the heater a two-layer structure consisting of a main heater and a sub-heater is not sufficient, and further improvement in the uniformity of the temperature distribution within the wafer surface is required.

[0008] The present invention has been made based on the recognition of such problems, and aims to provide an electrostatic chuck and a semiconductor manufacturing apparatus that can improve the uniformity of the temperature distribution within the surface of the processing object. [Means for solving the problem]

[0009] A first invention provides a ceramic dielectric substrate having a first main surface on which an object to be processed is placed and a second main surface opposite to the first main surface, a base plate supporting the ceramic dielectric substrate, and a heater section for heating the ceramic dielectric substrate, the heater section having a first heater element and a second heater element, the second heater element having a plurality of main zones divided in a radial direction, the first heater element having a plurality of sub-zones, the number of the plurality of sub-zones being greater than the number of the plurality of main zones, and the plurality of main zones being divided into a first main zone and a second main zone. the first main zone has a main heater line that generates heat when a current flows therethrough and a first main power supply unit that supplies power to the main heater line; the plurality of subzones include a first subzone that overlaps with the first main zone in a Z direction perpendicular to the first main surface; the first subzone has, when viewed along the Z direction, a central region that is located in the center of the first subzone and a peripheral region that is located outside the central region; and the first main power supply unit is provided at a position that overlaps with the central region in the Z direction.

[0010] According to this electrostatic chuck, the first main power supply part, which is likely to have a lower temperature than the main heater line when the second heater element is heated, is provided at a position overlapping in the Z direction with the central region of the first sub-zone, which is likely to have a higher temperature than the peripheral region of the first sub-zone, thereby improving the uniformity of the temperature distribution within the surface of the entire heater part, thereby improving the uniformity of the temperature distribution within the surface of the processing object.

[0011] A second invention is an electrostatic chuck according to the first invention, wherein the first sub-zone includes a sub-heater line that generates heat when a current flows therethrough, a first sub-power feeder that supplies power to the sub-heater line, and a second sub-power feeder that supplies power to the sub-heater line, and when viewed along the Z direction, a sum of an area of the first sub-power feeder that overlaps with the central region, an area of the second sub-power feeder that overlaps with the central region, and an area of the first main power feeder that overlaps with the central region is greater than a sum of an area of the first sub-power feeder that overlaps with the outer circumferential region, an area of the second sub-power feeder that overlaps with the outer circumferential region, and an area of the first main power feeder that overlaps with the outer circumferential region.

[0012] According to this electrostatic chuck, by making the total area of the power supply parts overlapping with the central region larger than the total area of the power supply parts overlapping with the peripheral region, the power supply parts, which tend to have a lower temperature, can be moved closer to the central region, which has a relatively higher temperature within the zone, thereby further improving the uniformity of the temperature distribution within the entire surface of the heater unit.

[0013] A third invention is the electrostatic chuck according to the first or second invention, characterized in that the first sub-zone includes a sub-heater line that generates heat when a current flows therethrough, a first sub-power feeder that supplies power to the sub-heater line, and a second sub-power feeder that supplies power to the sub-heater line, and at least one of the first sub-power feeder and the second sub-power feeder is provided in the central region.

[0014] According to this electrostatic chuck, the first sub-power supply portion and the second sub-power supply portion, which tend to have a lower temperature than the sub-heater line when the first heater element is heated, are provided in the central region of the first sub-zone, which tends to have a higher temperature than the peripheral region of the first sub-zone, thereby improving the uniformity of the temperature distribution within the surface of the first sub-zone, thereby further improving the uniformity of the temperature distribution within the surface of the entire heater unit.

[0015] A fourth invention is the electrostatic chuck according to the third invention, wherein the first sub-power supply portion and the second sub-power supply portion are provided in the central region.

[0016] According to this electrostatic chuck, by providing both the first sub-power supply portion and the second sub-power supply portion in the central region of the first sub-zone, it is possible to further improve the uniformity of the temperature distribution within the surface of the first sub-zone, thereby further improving the uniformity of the temperature distribution within the surface of the entire heater portion.

[0017] A fifth invention is an electrostatic chuck according to any one of the first to fourth inventions, characterized in that the first sub-zone includes a sub-heater line that generates heat when a current flows therethrough, a first sub-power feeder that supplies power to the sub-heater line, and a second sub-power feeder that supplies power to the sub-heater line, and the first main power feeder is provided at a position that overlaps with the sub-heater line in the Z direction.

[0018] Since the first main power feeder itself does not generate heat, the temperature of the first main power feeder is lower than that of the main heater line. According to this electrostatic chuck, by arranging the first main power feeder at a position overlapping with the sub-heater line in the Z direction, the low temperature of the first main power feeder can be compensated for by the heat of the sub-heater line, and the uniformity of the temperature distribution in the entire surface of the heater unit can be further improved.

[0019] A sixth invention is an electrostatic chuck according to any one of the first to fifth inventions, characterized in that the first main zone further has lift pin holes through which lift pins for supporting the object to be processed can pass, and the lift pin holes are provided at positions overlapping with the central region in the Z direction.

[0020] According to this electrostatic chuck, the lift pin holes, which tend to have a lower temperature than other parts when the second heater element is heated because no main heater line is provided, are positioned so as to overlap in the Z direction with the central region of the first subzone, which tends to have a higher temperature than the peripheral region of the first subzone, thereby improving the uniformity of the temperature distribution within the surface of the entire heater section.

[0021] A seventh invention is an electrostatic chuck according to any one of the first to sixth inventions, further comprising an attraction electrode provided inside the ceramic dielectric substrate, the first main zone further having an attraction electrode terminal hole provided to allow an attraction electrode terminal to pass therethrough for supplying current to the attraction electrode, and the attraction electrode terminal hole is provided at a position overlapping with the central region in the Z direction.

[0022] According to this electrostatic chuck, the attraction electrode terminal holes, which tend to have a lower temperature than other parts when the second heater element is heated because no main heater line is provided, are provided at positions that overlap in the Z direction with the central region of the first subzone, which tends to have a higher temperature than the outer peripheral region of the first subzone. This makes it possible to improve the uniformity of the temperature distribution within the surface of the entire heater section.

[0023] An eighth invention is an electrostatic chuck according to any one of the first to seventh inventions, characterized in that the first main zone further has a cooling gas hole through which a cooling gas for cooling the object to be processed can pass, and the cooling gas hole is provided at a position overlapping with the central region in the Z direction.

[0024] According to this electrostatic chuck, the cooling gas holes, which tend to have a lower temperature than other parts when the second heater element is heated because no main heater line is provided, are provided at a position that overlaps in the Z direction with the central region of the first subzone, which tends to have a higher temperature than the peripheral region of the first subzone, thereby improving the uniformity of the temperature distribution within the surface of the entire heater section.

[0025] A ninth invention is an electrostatic chuck according to any one of the first to eighth inventions, characterized in that the heater section further has a bypass layer which is a power supply path to the first heater element and the second heater element, and the bypass layer is in direct contact with the first main power supply section, thereby being electrically connected to the first main power supply section.

[0026] According to this electrostatic chuck, the provision of a bypass layer increases the flexibility in the arrangement of the power supply terminals. For example, power supply terminals that are prone to temperature singularities can be dispersed, facilitating heat diffusion around the singularities. This improves the uniformity of the temperature distribution within the surface of the processing object. Furthermore, the provision of a bypass layer allows a configuration in which power supply terminals with large heat capacity are not directly connected to the first heater element and the second heater element. This improves the uniformity of the temperature distribution within the surface of the processing object. Furthermore, the provision of a bypass layer eliminates the need to directly connect the power supply terminals to the relatively thin first heater element and the second heater element. This improves the reliability of the heater unit. Furthermore, the bypass layer directly contacts the first main power supply and is electrically connected to the first main power supply, thereby improving the flexibility in the arrangement of the power supply terminals.

[0027] A tenth invention is the electrostatic chuck according to the ninth invention, characterized in that the second heater element is provided between the bypass layer and the first heater element in the Z direction.

[0028] According to this electrostatic chuck, by providing the second heater element between the bypass layer and the first heater element in the Z direction, the first heater element and the second heater element can be disposed on one side of the bypass layer. This allows the power supply terminals to be connected to the bypass layer from the side opposite the first heater element and the second heater element. Therefore, there is no need to provide holes in the first heater element and the second heater element for passing the power supply terminals through, and the uniformity of the temperature distribution within the surfaces of the first heater element and the second heater element can be improved.

[0029] An eleventh invention is an electrostatic chuck according to any one of the first to tenth inventions, characterized in that the first heater element generates a smaller amount of heat than the second heater element.

[0030] According to this electrostatic chuck, the first heater element generates less heat than the second heater element, so that the first heater element can suppress temperature variations within the surface of the processing object caused by the pattern of the second heater element, thereby improving the uniformity of the temperature distribution within the surface of the processing object.

[0031] A twelfth invention is an electrostatic chuck according to any one of the first to tenth inventions, characterized in that the volume resistivity of the first heater element is higher than the volume resistivity of the second heater element.

[0032] According to this electrostatic chuck, by making the volume resistivity of the first heater element higher than that of the second heater element, the output of the first heater element can be made lower than the output of the second heater element. This allows the first heater element to suppress temperature variations within the surface of the processing object caused by the pattern of the second heater element. Therefore, the uniformity of the temperature distribution within the surface of the processing object can be improved.

[0033] A thirteenth invention is an electrostatic chuck according to any one of the first to twelfth inventions, characterized in that the heater portion is provided between the ceramic dielectric substrate and the base plate.

[0034] A fourteenth invention is an electrostatic chuck according to any one of the first to twelfth inventions, characterized in that the heater portion is provided between the first main surface and the second main surface of the ceramic dielectric substrate.

[0035] These electrostatic chucks can improve the uniformity of the temperature distribution within the surface of the processing object.

[0036] A fifteenth aspect of the present invention is a semiconductor manufacturing device comprising the electrostatic chuck according to any one of the first to fourteenth aspects of the present invention. [Effects of the Invention]

[0037] According to aspects of the present invention, an electrostatic chuck and a semiconductor manufacturing apparatus are provided that can improve the uniformity of the temperature distribution within the surface of a processing object. [Brief explanation of the drawings]

[0038] [Figure 1] FIG. 1 is a perspective view schematically illustrating an electrostatic chuck according to an embodiment. [Figure 2] 2(a) and 2(b) are cross-sectional views schematically illustrating a part of an electrostatic chuck according to an embodiment. [Figure 3] 3(a) and 3(b) are cross-sectional views schematically illustrating a part of an electrostatic chuck according to a modified example of the embodiment. [Figure 4] FIG. 2 is an exploded perspective view schematically illustrating a heater portion according to the embodiment. [Figure 5] FIG. 2 is an exploded cross-sectional view schematically illustrating a heater portion according to the embodiment. [Figure 6] FIG. 3 is a plan view schematically showing a main zone of a second heater element according to the first embodiment. [Figure 7]FIG. 2 is a plan view schematically showing a subzone of the first heater element according to the first embodiment. [Figure 8] FIG. 3 is a plan view schematically showing a part of the main zone of the second heater element according to the first embodiment. [Figure 9] FIG. 2 is a plan view schematically illustrating a part of a subzone of a first heater element according to the first embodiment. [Figure 10] FIG. 3 is a plan view schematically showing the positional relationship between the main zone of the second heater element and the sub-zone of the first heater element according to the first embodiment. [Figure 11] FIG. 3 is a plan view schematically showing the positional relationship between a part of the main zone of the second heater element and a part of the sub-zone of the first heater element according to the first embodiment. [Figure 12] FIG. 10 is a plan view schematically illustrating the positional relationship between another part of the main zone of the second heater element and another part of the sub-zone of the first heater element according to the first embodiment. [Figure 13] FIG. 10 is a plan view schematically showing a main zone of a second heater element according to a second embodiment. [Figure 14] FIG. 10 is a plan view schematically showing a subzone of a first heater element according to a second embodiment. [Figure 15] FIG. 10 is a plan view schematically showing the positional relationship between the main zone of the second heater element and the sub-zone of the first heater element according to the second embodiment. [Figure 16] FIG. 10 is a plan view schematically showing the positional relationship between a part of the main zone of the second heater element and a part of the sub-zone of the first heater element according to the second embodiment. [Figure 17] FIG. 10 is a plan view schematically illustrating the positional relationship between another part of the main zone of the second heater element and another part of the sub-zone of the first heater element according to the second embodiment. [Figure 18] FIG. 10 is a plan view schematically showing the positional relationship between the main zone of the second heater element and the sub-zone of the first heater element according to the third embodiment. [Figure 19]FIG. 10 is a plan view schematically illustrating a part of a subzone of a first heater element according to a third embodiment. [Figure 20] FIG. 2 is a plan view schematically illustrating a part of a subzone of a first heater element according to the first embodiment. [Figure 21] FIG. 4 is a plan view schematically illustrating the positional relationship between a sub-heater line of a first heater element and a first main power supply portion of a second heater element according to the embodiment. [Figure 22] FIG. 10 is a plan view schematically illustrating the positional relationship between a part of the main zone of the second heater element and a part of the sub-zone of the first heater element according to a modified example of the first embodiment. [Figure 23] FIG. 4 is a plan view schematically showing a part of a second heater element according to the embodiment. [Figure 24] FIG. 10 is a plan view schematically illustrating the positional relationship between a part of the main zone of the second heater element and a part of the sub-zone of the first heater element according to a modified example of the first embodiment. [Figure 25] FIG. 2 is a cross-sectional view schematically illustrating a part of a heater unit according to the embodiment. [Figure 26] 1 is a cross-sectional view schematically illustrating a wafer processing apparatus according to an embodiment. [Figure 27] FIG. 10 is an exploded cross-sectional view schematically illustrating a heater portion according to a modified example of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0039] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, like components are designated by like reference numerals and detailed descriptions thereof will be omitted where appropriate.

[0040] FIG. 1 is a perspective view schematically illustrating an electrostatic chuck according to an embodiment. 2(a) and 2(b) are cross-sectional views schematically illustrating a part of an electrostatic chuck according to an embodiment. For convenience of explanation, FIG. 1 shows a cross-sectional view of a part of the electrostatic chuck. FIG. 2(a) is a cross-sectional view taken along line A1-A1 shown in FIG. Fig. 2(b) is an enlarged view of region B1 shown in Fig. 2(a). Note that the processing object W is omitted in Fig. 2(b).

[0041] As shown in FIGS. 1, 2(a), and 2(b), the electrostatic chuck 10 according to the embodiment includes a ceramic dielectric substrate 100, a heater portion 200, and a base plate 300.

[0042] The ceramic dielectric substrate 100 is a flat base material made of, for example, a polycrystalline ceramic sintered body, and has a first main surface 101 on which a processing object W such as a semiconductor wafer is placed, and a second main surface 102 opposite to the first main surface 101.

[0043] In this specification, the direction perpendicular to the first main surface 101 is defined as the Z direction. In other words, the Z direction is the direction connecting the first main surface 101 and the second main surface 102. In other words, the Z direction is the direction from the base plate 300 toward the ceramic dielectric substrate 100. One of the directions perpendicular to the Z direction is defined as the X direction, and the direction perpendicular to the Z direction and the X direction is defined as the Y direction. In this specification, "in-plane" refers to, for example, the XY plane. In this specification, "planar view" refers to a state viewed along the Z direction.

[0044] Examples of the crystalline material contained in the ceramic dielectric substrate 100 include Al2O3, Y2O3, and YAG. By using such materials, the infrared transmittance, insulation resistance, and plasma durability of the ceramic dielectric substrate 100 can be improved.

[0045] An electrode layer 111 is provided inside the ceramic dielectric substrate 100. The electrode layer 111 is interposed between the first main surface 101 and the second main surface 102. In other words, the electrode layer 111 is formed so as to be inserted into the ceramic dielectric substrate 100. The electrode layer 111 is sintered integrally with the ceramic dielectric substrate 100.

[0046] The electrode layer 111 is not limited to being interposed between the first main surface 101 and the second main surface 102, but may be provided on the second main surface 102.

[0047] The electrostatic chuck 10 applies an attracting and holding voltage to the electrode layer 111 to generate an electric charge on the first main surface 101 side of the electrode layer 111, and attracts and holds the workpiece W by electrostatic force.

[0048] The electrode layer 111 is provided along the first main surface 101 and the second main surface 102. The electrode layer 111 is an adsorption electrode for adsorbing and holding the processing target W. The electrode layer 111 may be a monopolar or bipolar type. The electrode layer 111 may also be a tripolar or other multipolar type. The number of electrode layers 111 and the arrangement of the electrode layers 111 are selected appropriately.

[0049] The base plate 300 is provided on the second main surface 102 side of the ceramic dielectric substrate 100 and supports the ceramic dielectric substrate 100. The base plate 300 is provided with a communication path 301. In other words, the communication path 301 is provided inside the base plate 300. The base plate 300 may be made of aluminum, for example.

[0050] The base plate 300 serves to adjust the temperature of the ceramic dielectric substrate 100. For example, when cooling the ceramic dielectric substrate 100, a cooling medium is introduced into the communicating passages 301, passed through the communicating passages 301, and then discharged from the communicating passages 301. This allows the cooling medium to absorb heat from the base plate 300, thereby cooling the ceramic dielectric substrate 100 mounted thereon.

[0051] Furthermore, convex portions 113 are provided on the first main surface 101 side of the ceramic dielectric substrate 100 as needed. Grooves 115 are provided between adjacent convex portions 113. The grooves 115 communicate with each other. A space is formed between the grooves 115 and the back surface of the processing object W mounted on the electrostatic chuck 10.

[0052] An introduction path 321 that penetrates the base plate 300 and the ceramic dielectric substrate 100 is connected to the groove 115. When a transfer gas such as helium (He) is introduced from the introduction path 321 while the processing object W is held by suction, the transfer gas flows into the space provided between the processing object W and the groove 115, and the processing object W can be directly heated or cooled by the transfer gas.

[0053] The heater section 200 heats the ceramic dielectric substrate 100. The heater section 200 heats the ceramic dielectric substrate 100, thereby heating the processing object W via the ceramic dielectric substrate 100. In this example, the heater section 200 is separate from the ceramic dielectric substrate 100 and is provided between the ceramic dielectric substrate 100 and the base plate 300.

[0054] An adhesive layer 403 is provided between the base plate 300 and the heater section 200. An adhesive layer 403 is provided between the heater section 200 and the ceramic dielectric substrate 100. The adhesive layer 403 may be made of a heat-resistant resin such as silicone, which has relatively high thermal conductivity. The thickness of the adhesive layer 403 is, for example, approximately 0.1 millimeters (mm) or more and 1.0 mm or less. The thickness of the adhesive layer 403 is the same as the distance between the base plate 300 and the heater section 200, or the distance between the heater section 200 and the ceramic dielectric substrate 100.

[0055] 3(a) and 3(b) are cross-sectional views schematically illustrating a part of an electrostatic chuck according to a modified example of the embodiment. Fig. 3(b) is an enlarged view of region B2 shown in Fig. 3(a). Note that the processing object W is omitted in Fig. 3(b). 3(a) and 3(b), in this example, the heater section 200 is provided between the first main surface 101 and the second main surface 102. That is, the heater section 200 may be formed so as to be inserted into the ceramic dielectric substrate 100. In other words, the heater section 200 may be built into the ceramic dielectric substrate 100. In this case, the adhesive layer 403 is omitted.

[0056] FIG. 4 is an exploded perspective view schematically illustrating a heater portion according to the embodiment. FIG. 5 is an exploded cross-sectional view schematically illustrating a heater portion according to the embodiment. 4 and 5, an example will be described in which the heater section 200 is provided between the ceramic dielectric substrate 100 and the base plate 300, as in FIG. 2. In this example, the heater section 200 includes support plates (first support plate 210 and second support plate 270), but support plates may not be provided. When the heater section 200 is provided between the first main surface 101 and the second main surface 102 of the ceramic dielectric substrate 100, as in FIG. 3, the first support plate 210 and the second support plate 270 may be omitted. As shown in Figures 4 and 5, in this example, the heater section 200 has a first support plate 210, a first insulating layer 220, a first heater element 231, a second insulating layer 240, a second heater element 232, a third insulating layer 245, a bypass layer 250, a fourth insulating layer 260, a second support plate 270, and a power supply terminal 280.

[0057] The first support plate 210 is provided on the first heater element 231, the second heater element 232, the bypass layer 250, etc. The second support plate 270 is provided below the first heater element 231, the second heater element 232, the bypass layer 250, etc. A surface 211 (upper surface) of the first support plate 210 forms the upper surface of the heater section 200. A surface 271 (lower surface) of the second support plate 270 forms the lower surface of the heater section 200. When the heater section 200 is built into the ceramic dielectric substrate 100, the first support plate 210 and the second support plate 270 can be omitted.

[0058] The first support plate 210 and the second support plate 270 are support plates that support the first heater element 231, the second heater element 232, etc. In this example, the first support plate 210 and the second support plate 270 sandwich and support the first insulating layer 220, the first heater element 231, the second insulating layer 240, the second heater element 232, the third insulating layer 245, the bypass layer 250, and the fourth insulating layer 260.

[0059] The first insulating layer 220 is provided between the first support plate 210 and the second support plate 270. The first heater element 231 is provided between the first insulating layer 220 and the second support plate 270. In this manner, the first heater element 231 is provided overlapping the first support plate 210. In other words, the first insulating layer 220 is provided between the first support plate 210 and the first heater element 231. When the heater section 200 is built into the ceramic dielectric substrate 100, the ceramic dielectric substrate 100 also serves as the first insulating layer 220.

[0060] The second insulating layer 240 is provided between the first heater element 231 and the second support plate 270. The second heater element 232 is provided between the second insulating layer 240 and the second support plate 270. In this manner, the second heater element 232 is provided in a layer different from the layer in which the first heater element 231 is provided. At least a portion of the second heater element 232 overlaps the first heater element 231 in the Z direction. The third insulating layer 245 is provided between the second heater element 232 and the second support plate 270. The bypass layer 250 is provided between the third insulating layer 245 and the second support plate 270. The fourth insulating layer 260 is provided between the bypass layer 250 and the second support plate 270.

[0061] In other words, the first heater element 231 is provided between the first insulating layer 220 and the second insulating layer 240. In other words, the second heater element 232 is provided between the second insulating layer 240 and the third insulating layer 245. In other words, the bypass layer 250 is provided between the third insulating layer 245 and the fourth insulating layer 260.

[0062] The first heater element 231, for example, contacts the first insulating layer 220 and the second insulating layer 240. The second heater element 232, for example, contacts the second insulating layer 240 and the third insulating layer 245. The bypass layer 250, for example, contacts the third insulating layer 245 and the fourth insulating layer 260.

[0063] The bypass layer 250 and the fourth insulating layer 260 are provided as necessary and can be omitted. If the bypass layer 250 and the fourth insulating layer 260 are not provided, the third insulating layer 245 comes into contact with the second support plate 270. The following description will be given taking as an example a case where the heater section 200 has the bypass layer 250 and the fourth insulating layer 260.

[0064] The first support plate 210 has a relatively high thermal conductivity. For example, the thermal conductivity of the first support plate 210 is higher than that of the first heater element 231 and higher than that of the second heater element 232. Examples of materials for the first support plate 210 include metals containing at least one of aluminum, copper, and nickel, and multilayer graphite. The thickness (length in the Z direction) of the first support plate 210 is, for example, approximately 0.1 mm or more and 3.0 mm or less. More preferably, the thickness of the first support plate 210 is, for example, approximately 0.3 mm or more and 1.0 mm or less. The first support plate 210 improves the uniformity of the temperature distribution within the surface of the heater section 200. The first support plate 210 functions, for example, as a heat spreader plate. The first support plate 210 suppresses warping of the heater section 200. The first support plate 210 improves the adhesive strength between the heater section 200 and the ceramic dielectric substrate 100.

[0065] The material, thickness, and function of the second support plate 270 are the same as those of the first support plate 210. For example, the thermal conductivity of the second support plate 270 is higher than that of the first heater element 231 and higher than that of the second heater element 232. In the embodiment, at least one of the first support plate 210 and the second support plate 270 may be omitted.

[0066] The first insulating layer 220 may be made of an insulating material such as resin or ceramic. Examples of resin materials for the first insulating layer 220 include polyimide and polyamideimide. Examples of ceramic materials for the first insulating layer 220 include Al2O3, Y2O3, and YAG. The thickness (length in the Z direction) of the first insulating layer 220 is, for example, approximately 0.01 mm or more and 0.20 mm or less. The first insulating layer 220 bonds the first support plate 210 and the first heater element 231. The first insulating layer 220 electrically insulates the first support plate 210 and the first heater element 231. Thus, the first insulating layer 220 has both an electrical insulating function and a surface-bonding function. The first insulating layer 220 is only required to have at least an insulating function, and may also have other functions such as a heat conducting function and a diffusion preventing function.

[0067] The material and thickness of the second insulating layer 240 are approximately the same as those of the first insulating layer 220. The material and thickness of the third insulating layer 245 are approximately the same as those of the first insulating layer 220. The material and thickness of the fourth insulating layer 260 are approximately the same as those of the first insulating layer 220.

[0068] The second insulating layer 240 joins the first heater element 231 and the second heater element 232. The second insulating layer 240 electrically insulates the first heater element 231 and the second heater element 232. In this way, the second insulating layer 240 has an electrical insulating function and a surface-to-surface bonding function. Note that the second insulating layer 240 only needs to have at least an insulating function, and may also have other functions such as a heat conducting function and a diffusion preventing function.

[0069] The third insulating layer 245 joins the second heater element 232 and the bypass layer 250. The third insulating layer 245 electrically insulates the second heater element 232 and the bypass layer 250. In this way, the third insulating layer 245 has an electrical insulating function and a surface-to-surface bonding function. Note that the third insulating layer 245 only needs to have at least an insulating function, and may also have other functions such as a heat conducting function and a diffusion preventing function.

[0070] The fourth insulating layer 260 joins the bypass layer 250 and the second support plate 270. The fourth insulating layer 260 electrically insulates the bypass layer 250 and the second support plate 270. In this way, the fourth insulating layer 260 has an electrical insulating function and a surface-to-surface bonding function. Note that the fourth insulating layer 260 only needs to have at least an insulating function, and may also have other functions such as a heat conducting function and a diffusion preventing function.

[0071] Examples of materials for the first heater element 231 include metals containing at least one of stainless steel, titanium, chromium, nickel, copper, aluminum, Inconel (registered trademark), nickel, molybdenum, tungsten, palladium, platinum, silver, tantalum, molybdenum carbide, and tungsten carbide. The thickness (length in the Z direction) of the first heater element 231 is, for example, approximately 0.01 mm or more and 0.20 mm or less. The material and thickness of the second heater element 232 are approximately the same as those of the first heater element 231. The first heater element 231 and the second heater element 232 are, for example, electrically connected to the bypass layer 250. On the other hand, the first heater element 231 and the second heater element 232 are electrically insulated from the first support plate 210 and the second support plate 270, respectively.

[0072] The first heater element 231 and the second heater element 232 each generate heat when a current flows therethrough. The first heater element 231 and the second heater element 232 generate heat to heat the ceramic dielectric substrate 100. The first heater element 231 and the second heater element 232 heat the processing object W, for example, via the ceramic dielectric substrate 100, thereby making the temperature distribution within the surface of the processing object W uniform. Alternatively, the first heater element 231 and the second heater element 232 can intentionally make a difference in the temperature within the surface of the processing object W, for example, by heating the processing object W via the ceramic dielectric substrate 100.

[0073] The bypass layer 250 is disposed approximately parallel to the first support plate 210 and approximately parallel to the second support plate 270. The bypass layer 250 has a plurality of bypass sections 251. In this example, the bypass layer 250 has eight bypass sections 251. The number of bypass sections 251 is not limited to "8". The bypass layer 250 has a plate shape.

[0074] The bypass layer 250 has, for example, electrical conductivity. The bypass layer 250 is, for example, electrically connected to the first heater element 231 and the second heater element 232. The bypass layer 250 is a power supply path for the first heater element 231 and the second heater element 232. On the other hand, the bypass layer 250 is electrically insulated from, for example, the first support plate 210 and the second support plate 270 by an insulating layer.

[0075] The thickness of the bypass layer 250 (length in the Z direction) is, for example, approximately 0.03 mm or more and 0.30 mm or less. The thickness of the bypass layer 250 is thicker than the thickness of the first insulating layer 220. The thickness of the bypass layer 250 is thicker than the thickness of the second insulating layer 240. The thickness of the bypass layer 250 is thicker than the thickness of the third insulating layer 245. The thickness of the bypass layer 250 is thicker than the thickness of the fourth insulating layer 260.

[0076] For example, the material of the bypass layer 250 is the same as the material of the first heater element 231 and the second heater element 232. On the other hand, the thickness of the bypass layer 250 is thicker than the thickness of the first heater element 231 and thicker than the thickness of the second heater element 232. Therefore, the electrical resistance of the bypass layer 250 is lower than the electrical resistance of the first heater element 231 and lower than the electrical resistance of the second heater element 232. This makes it possible to prevent the bypass layer 250 from generating heat like the first heater element 231 and the second heater element 232, even if the material of the bypass layer 250 is the same as the material of the first heater element 231 and the second heater element 232. In other words, the electrical resistance of the bypass layer 250 can be reduced, and the amount of heat generated by the bypass layer 250 can be reduced.

[0077] Note that the means for reducing the electrical resistance of the bypass layer 250 and the amount of heat generated by the bypass layer 250 may be achieved by using a material with a relatively low volume resistivity, rather than by increasing the thickness of the bypass layer 250. That is, the material of the bypass layer 250 may be different from the material of the first heater element 231 and the second heater element 232. Examples of materials for the bypass layer 250 include metals containing at least one of stainless steel, titanium, chromium, nickel, copper, and aluminum.

[0078] The power supply terminal 280 is electrically connected to the bypass layer 250. When the heater section 200 is provided between the base plate 300 and the ceramic dielectric substrate 100, the power supply terminal 280 is provided from the heater section 200 toward the base plate 300. The power supply terminal 280 supplies power supplied from outside the electrostatic chuck 10 to the first heater element 231 and the second heater element 232 via the bypass layer 250. The power supply terminal 280 may be directly connected to the first heater element 231 and the second heater element 232, for example. This makes it possible to omit the bypass layer 250.

[0079] On the other hand, when the first heater element 231 and / or the second heater element 232 has a large number of zones, for example, 20 or more, 50 or more, or 100 or more, it becomes difficult to arrange the power supply terminals 280 corresponding to each zone. By providing the bypass layer 250, the degree of freedom in arranging the power supply terminals 280 is improved compared to when the power supply terminals 280 are arranged for each zone.

[0080] The heater section 200 has a plurality of power supply terminals 280. In this example, the heater section 200 has eight power supply terminals 280. The number of power supply terminals 280 is not limited to "8". One power supply terminal 280 is electrically connected to one bypass section 251. In other words, the number of power supply terminals 280 is the same as the number of bypass sections 251. The hole 273 penetrates the second support plate 270. The power supply terminal 280 is electrically connected to the bypass section 251 through the hole 273.

[0081] The first heater element 231 includes a first sub-power feeder 231a, a second sub-power feeder 231b, and a sub-heater line 231c. The sub-heater line 231c is electrically connected to the first sub-power feeder 231a and the second sub-power feeder 231b. The first sub-power feeder 231a is provided at one end of the sub-heater line 231c, and the second sub-power feeder 231b is provided at the other end of the sub-heater line 231c. The sub-heater line 231c generates heat when a current flows through it. The first sub-power feeder 231a and the second sub-power feeder 231b feed power to the sub-heater line 231c. The first heater element 231 is electrically connected to the bypass layer 250 at the first sub-power feeder 231a and the second sub-power feeder 231b.

[0082] As indicated by arrows C1 and C2 in Fig. 5, when power is supplied to the power supply terminal 280 from the outside of the electrostatic chuck 10, a current flows from the power supply terminal 280 to the bypass layer 250. As indicated by arrows C3 and C4 in Fig. 5, the current flowing to the bypass layer 250 flows from the bypass layer 250 to the first heater element 231. As indicated by arrows C5 and C6 in Fig. 5, the current flowing to the first heater element 231 flows through a predetermined region of the first heater element 231 and then flows from the first heater element 231 to the bypass layer 250. More specifically, the current flowing to the bypass layer 250 flows to the sub-heater line 231c via the first sub-power feeder 231a and then flows to the bypass layer 250 via the second sub-power feeder 231b. 5, the current flowing to the bypass layer 250 flows from the bypass layer 250 to the power supply terminal 280. As shown in FIG. 5, the current flowing to the power supply terminal 280 flows to the outside of the electrostatic chuck 10.

[0083] The second heater element 232 has a first main power feeder 232a, a second main power feeder 232b, and a main heater line 232c. The main heater line 232c is electrically connected to the first main power feeder 232a and the second main power feeder 232b. The first main power feeder 232a is provided at one end of the main heater line 232c, and the second main power feeder 232b is provided at the other end of the main heater line 232c. The main heater line 232c generates heat when a current flows through it. The first main power feeder 232a and the second main power feeder 232b feed power to the main heater line 232c. The second heater element 232 is electrically connected to the bypass layer 250 at the first main power feeder 232a and the second main power feeder 232b.

[0084] As indicated by arrows C11 and C12 in Fig. 5, when power is supplied to the power supply terminal 280 from outside the electrostatic chuck 10, a current flows from the power supply terminal 280 to the bypass layer 250. As indicated by arrows C13 and C14 in Fig. 5, the current flowing to the bypass layer 250 flows from the bypass layer 250 to the second heater element 232. As indicated by arrows C15 and C16 in Fig. 5, the current flowing to the second heater element 232 flows through a predetermined region of the second heater element 232 and then flows from the second heater element 232 to the bypass layer 250. More specifically, the current flowing to the bypass layer 250 flows to the main heater line 232c via the first main power supply part 232a and then flows to the bypass layer 250 via the second main power supply part 232b. 5, the current flowing to the bypass layer 250 flows from the bypass layer 250 to the power supply terminal 280. As shown in FIG. 5, the current flowing to the power supply terminal 280 flows to the outside of the electrostatic chuck 10.

[0085] For example, the current flowing through the first heater element 231 and the current flowing through the second heater element 232 are controlled separately. In this example, the bypass section 251 connected to the first heater element 231 (first sub-power feeder 231a and second sub-power feeder 231b) is different from the bypass section 251 connected to the second heater element 232 (first main power feeder 232a and second main power feeder 232b). The bypass section 251 connected to the first heater element 231 (first sub-power feeder 231a and second sub-power feeder 231b) and the bypass section 251 connected to the second heater element 232 (first main power feeder 232a and second main power feeder 232b) may be the same.

[0086] The first heater element 231 generates less heat than the second heater element 232. That is, the first heater element 231 is a low-output sub-heater, and the second heater element 232 is a high-output main heater.

[0087] In this way, the first heater element 231 generates less heat than the second heater element 232, so that the first heater element 231 can suppress temperature unevenness within the surface of the processing object W caused by the pattern of the second heater element 232. Therefore, the uniformity of the temperature distribution within the surface of the processing object W can be improved.

[0088] The volume resistivity of the first heater element 231 is higher than the volume resistivity of the second heater element 232, for example. The volume resistivity of the first heater element 231 is the volume resistivity of the sub-heater line 231c. That is, the volume resistivity of the first heater element 231 is the volume resistivity between the first sub-power feeder 231a and the second sub-power feeder 231b. In other words, the volume resistivity of the first heater element 231 is the volume resistivity in the path indicated by arrow C5 in FIG. 5. Similarly, the volume resistivity of the second heater element 232 is the volume resistivity of the main heater line 232c. That is, the volume resistivity of the second heater element 232 is the volume resistivity between the first main power feeder 232a and the second main power feeder 232b. In other words, the volume resistivity of the second heater element 232 is the volume resistivity in the path indicated by arrow C15 in FIG. 5.

[0089] In this way, by making the volume resistivity of the first heater element 231 higher than that of the second heater element 232, the output (heat generation, power consumption) of the first heater element 231 can be made lower than the output (heat generation, power consumption) of the second heater element 232. This allows the first heater element to suppress temperature unevenness within the surface of the processing object caused by the pattern of the second heater element. Therefore, it is possible to improve the uniformity of the temperature distribution within the surface of the processing object.

[0090] The area around the power supply terminal 280 is likely to become a temperature singular point (a point where the temperature is relatively significantly different from the surrounding area). In response to this, the provision of the bypass layer 250 increases the degree of freedom in arranging the power supply terminal 280. For example, the power supply terminals 280 that are likely to become temperature singular points can be arranged in a dispersed manner, making it easier for heat to diffuse around the singular points. This improves the uniformity of the temperature distribution within the surface of the processing object W.

[0091] By providing the bypass layer 250, it is possible to configure the heater section 200 so that the power supply terminals 280, which have a large heat capacity, are not directly connected to the first heater element 231 and the second heater element 232. This can improve the uniformity of the temperature distribution within the surface of the processing object W. Furthermore, by providing the bypass layer 250, it is not necessary to directly connect the power supply terminals 280 to the first heater element 231 and the second heater element 232, which are relatively thin. This can improve the reliability of the heater section 200.

[0092] As described above, the power supply terminal 280 is provided from the heater unit 200 toward the base plate 300. Therefore, power can be supplied to the power supply terminal 280 from the lower surface 303 (see FIGS. 2(a) and 2(b)) side of the base plate 300 via a member called a socket or the like. This allows wiring of the heater to be realized while preventing the power supply terminal 280 from being exposed in the chamber in which the electrostatic chuck 10 is installed.

[0093] In this example, the first heater element 231 is located higher than the second heater element 232. In other words, the first heater element 231 is provided between the second heater element 232 and the first main surface 101. The positions of the first heater element 231 and the second heater element 232 may be reversed. That is, the second heater element 232 may be located higher than the first heater element 231. In other words, the second heater element 232 may be provided between the first main surface 101 and the first heater element 231. From the viewpoint of temperature control, it is preferable that the first heater element 231 be located higher than the second heater element 232.

[0094] When the first heater element 231 is positioned higher than the second heater element 232, the distance between the first heater element 231 and the processing object W is shorter than the distance between the second heater element 232 and the processing object W. Since the first heater element 231 is relatively close to the processing object W, the first heater element 231 can more easily control the temperature of the processing object W. That is, the first heater element 231 can more easily suppress temperature unevenness within the surface of the processing object W that occurs due to the pattern of the second heater element 232. Therefore, the uniformity of the temperature distribution within the surface of the processing object W can be improved.

[0095] On the other hand, when the second heater element 232 is positioned higher than the first heater element 231, the high-output second heater element 232 is relatively close to the processing object W. This can improve the temperature response (rate of temperature increase and rate of temperature decrease) of the processing object W.

[0096] In this example, the second heater element 232 is provided between the bypass layer 250 and the first heater element 231 in the Z direction. In other words, the bypass layer 250 is located below the first heater element 231 and the second heater element 232.

[0097] In this way, by providing the second heater element 232 between the bypass layer 250 and the first heater element 231 in the Z direction, the first heater element 231 and the second heater element 232 can be arranged on one side of the bypass layer 250. This makes it possible to connect the power supply terminal 280 to the bypass layer 250 from the side opposite to the first heater element 231 and the second heater element 232 when connecting the power supply terminal 280 to the bypass layer 250. Therefore, there is no need to provide holes in the first heater element 231 and the second heater element 232 for passing the power supply terminal 280, making it possible to reduce temperature singularities on the heater pattern and improve the uniformity of the temperature distribution within the surfaces of the first heater element 231 and the second heater element 232.

[0098] The bypass layer 250 may be located above the first heater element 231 and the second heater element 232. That is, the bypass layer 250 may be provided between the first support plate 210 and the first heater element 231. The bypass layer 250 may also be provided between the first support plate 210 and the second heater element 232. The bypass layer 250 may also be located between the first heater element 231 and the second heater element 232.

[0099] Furthermore, the number of heater elements included in the heater section 200 is not limited to two. That is, the heater section 200 may further include another heater element provided in a layer different from the first heater element 231 and the second heater element 232.

[0100] Fig. 6 is a plan view schematically illustrating the main zone of the second heater element according to the first embodiment. Fig. 6 is a view in which the second heater element 232 illustrated in Fig. 4 is projected onto a plane perpendicular to the Z direction. 6, the second heater element 232 has a plurality of main zones 600 divided in the radial direction Dr. In the second heater element 232, the temperature of each main zone 600 is controlled independently. In this specification, the "radial direction Dr" is the direction from the center of the heater element toward the outer periphery along the radius, and the "circumferential direction Dc" is the direction along the outer periphery of the heater element.

[0101] In this example, the multiple main zones 600 include three main zones 601 to 603 aligned in the radial direction Dr. That is, the second heater element 232 is divided into three in the radial direction Dr. The main zones 600 are arranged in the order of main zone 601, main zone 602, and main zone 603 from the center CT2 of the second heater element 232 outward in the radial direction Dr.

[0102] In a plan view, the main zone 601 has a circular shape centered on a center CT2. In a plan view, the main zone 602 is located outside the main zone 601 and has an annular shape centered on the center CT2. In a plan view, the main zone 603 is located outside the main zone 602 and has an annular shape centered on the center CT2.

[0103] In this example, the width LM1 in the radial direction Dr of the main zone 601, the width LM2 in the radial direction Dr of the main zone 602, and the width LM3 in the radial direction Dr of the main zone 603 are all the same. The widths LM1 to LM3 may be different from each other.

[0104] The number of main zones 600 and the shape of the main zones 600 in plan view may be arbitrary. The main zones 600 may be divided in the circumferential direction Dc, or may be divided in the circumferential direction Dc and the radial direction Dr. The configuration within each main zone 600 will be described later.

[0105] The main heater lines 232c constituting each main zone 600 are independent of each other. This allows a different voltage to be applied to each main zone 600 (main heater line 232c). Therefore, the output (amount of heat generated) can be controlled independently for each main zone 600. In other words, each main zone 600 is a heater unit capable of performing temperature control independently of each other, and the second heater element 232 is an assembly of heater units having a plurality of such heater units.

[0106] 6, for convenience, the ends of each main zone 600 in the radial direction Dr are shown as being in contact with each other, but in reality, there are gaps between them (i.e., portions where the main heater lines 232c are not provided), and the ends of adjacent main zones in the radial direction Dr do not come into contact with each other. This also applies to the subsequent figures.

[0107] Fig. 7 is a plan view schematically illustrating a subzone of the first heater element according to the first embodiment. Fig. 7 is a view in which the first heater element 231 illustrated in Fig. 4 is projected onto a plane perpendicular to the Z direction. 7, in this example, the first heater element 231 has a plurality of subzones 700 divided in the radial direction Dr and the circumferential direction Dc. In the first heater element 231, the temperature of each subzone 700 is independently controlled.

[0108] In this example, the multiple subzones 700 include a first region 701 consisting of subzones 701a to 701f aligned in the circumferential direction Dc, and a second region 702 consisting of subzones 702a to 702f aligned in the circumferential direction Dc. That is, the second heater element 232 is divided into two in the radial direction Dr. Furthermore, the first region 701 and the second region 702 are each divided into six in the circumferential direction Dc. The regions are arranged in this order from the center CT1 of the first heater element 231 outward in the radial direction Dr: the first region 701, then the second region 702.

[0109] The first region 701 has a circular shape centered on a center CT1 in plan view. The second region 702 has an annular shape centered on the center CT1 and is located outside the first region 701 in plan view.

[0110] The first area 701 has subzones 701a to 701f. In the first area 701, the subzones 701a to 701f are arranged in the following order clockwise: subzone 701a, subzone 701b, subzone 701c, subzone 701d, subzone 701e, and subzone 701f. Each of the subzones 701a to 701f constitutes a part of the circular first area 701.

[0111] The second region 702 has subzones 702a to 702f. In the second region 702, the subzones 702a to 702f are arranged clockwise in the following order: subzone 702a, subzone 702b, subzone 702c, subzone 702d, subzone 702e, and subzone 702f. In this example, subzone 702a is located outside subzone 701a. Subzone 702b is located outside subzone 701b. Subzone 702c is located outside subzone 701c. Subzone 702d is located outside subzone 701d. Subzone 702e is located outside subzone 701e. Subzone 702f is located outside subzone 701f. Each of the subzones 702a to 702f constitutes a part of the annular second region 702.

[0112] In this example, the width LS1 of the first region 701 in the radial direction Dr and the width LS2 of the second region 702 in the radial direction Dr are the same. The width LS1 and the width LS2 may be different.

[0113] The number of the sub-zones 700 is greater than the number of the main zones 600. In other words, the first heater element 231 is divided into more zones than the second heater element 232.

[0114] By making the number of sub-zones 700 included in the first heater element 231 greater than the number of main zones 600 included in the second heater element 232, the first heater element 231 can adjust the temperature in a smaller area than the second heater element 232. This makes it possible to use the first heater element 231 to perform more precise temperature adjustments, thereby improving the uniformity of the temperature distribution within the surface of the processing object W.

[0115] The number of subzones 700 and the shape of the subzones 700 in a plan view may be arbitrary. Furthermore, the subzones 700 do not have to be divided in the circumferential direction Dc. In other words, the first region 701 and the second region 702 do not have to include multiple subzones 700 divided in the circumferential direction Dc. The configuration within each subzone 700 will be described later.

[0116] The sub-heater lines 231c constituting each sub-zone 700 are independent of each other. This allows a different voltage to be applied to each sub-zone 700 (sub-heater line 231c). Therefore, the output (amount of heat generated) can be controlled independently for each sub-zone 700. In other words, each sub-zone 700 is a heater unit capable of performing temperature control independently of each other, and the first heater element 231 is an assembly of heater units having a plurality of such heater units.

[0117] 7, for convenience, the ends of the sub-zones 700 in the radial direction Dr are shown as being in contact with each other, but in reality, there are gaps between them (i.e., portions where the sub-heater lines 231c are not provided), and the ends of adjacent sub-zones 700 in the radial direction Dr do not come into contact with each other. This also applies to the subsequent figures.

[0118] FIG. 8 is a plan view schematically showing a part of the main zone of the second heater element according to the first embodiment. 8, the main zone 600 includes a first main power feeder 232a, a second main power feeder 232b, and a main heater line 232c. Each main zone 600 includes one first main power feeder 232a, one second main power feeder 232b, and one main heater line 232c. The main zone 600 is an area defined by the continuous main heater line 232c connecting the first main power feeder 232a and the second main power feeder 232b.

[0119] FIG. 9 is a plan view schematically illustrating a part of a subzone of the first heater element according to the first embodiment. 9, the subzone 700 includes a first sub-power feed portion 231a, a second sub-power feed portion 231b, and a sub-heater line 231c. Each subzone 700 includes one first sub-power feed portion 231a, one second sub-power feed portion 231b, and one sub-heater line 231c. The subzone 700 is an area defined by the continuous sub-heater line 231c connecting the first sub-power feed portion 231a and the second sub-power feed portion 231b.

[0120] FIG. 10 is a plan view schematically showing the positional relationship between the main zone of the second heater element and the sub-zone of the first heater element according to the first embodiment. FIG. 11 is a plan view schematically showing the positional relationship between a part of the main zone of the second heater element and a part of the sub-zone of the first heater element according to the first embodiment. 10 and 11 show the positional relationship when the second heater element 232 shown in FIG. 6 and the first heater element 231 shown in FIG. 7 are superimposed and viewed along the Z direction.

[0121] 10 and 11, the main zone 600 of the second heater element 232 is represented by a two-dot chain line, and the sub-zone 700 of the first heater element 231 is represented by a solid line. Hereinafter, when the positional relationship of the second heater element 232 and the first heater element 231 in a superimposed state is represented in a plan view, the main zone 600 of the second heater element 232 is represented by a two-dot chain line, and the sub-zone 700 of the first heater element 231 is represented by a solid line, as in FIGS.

[0122] 10, the first heater element 231 and the second heater element 232 are arranged such that, for example, a center CT1 of the first heater element 231 and a center CT2 of the second heater element 232 overlap in the Z direction. In addition, at this time, an outer peripheral edge 231e of the first heater element 231 and an outer peripheral edge 232e of the second heater element 232 overlap in the Z direction, for example.

[0123] Fig. 11 shows the positional relationship between the main zone 603 in Fig. 6 and the sub-zone 702e in Fig. 7. Here, an example will be described in which the first main zone 610 is the main zone 603 and the first sub-zone 710 is the sub-zone 702e. The first main zone 610 is one of the main zones 600. The first sub-zone 710 is one of the sub-zones 700. The first sub-zone 710 overlaps with the first main zone 610 in the Z direction.

[0124] 11 , the first subzone 710 has a central region 711 and an outer periphery region 712. The central region 711 is located in the center of the first subzone 710 in a plan view. The outer periphery region 712 is located outside the central region 711 in a plan view. For example, when the first subzone 710 is heated, the temperature of the central region 711 becomes higher than the temperature of the outer periphery region 712.

[0125] In this example, the first sub-zone 710 is an area surrounded by an inner circumferential edge 721, an outer circumferential edge 722, a first side edge 723, and a second side edge 724. The inner circumferential edge 721 overlaps with an inner end in the radial direction Dr of the sub-heater line 231c that constitutes the first sub-zone 710. The outer circumferential edge 722 overlaps with an outer end in the radial direction Dr of the sub-heater line 231c that constitutes the first sub-zone 710. In this example, the inner circumferential edge 721 and the outer circumferential edge 722 are arc-shaped.

[0126] The first side edge 723 is located between one end of the inner circumferential edge 721 and one end of the outer circumferential edge 722. The first side edge 723 overlaps with one end of the sub-heater line 231c that constitutes the first sub-zone 710 in the circumferential direction Dc. The second side edge 724 is located between the other end of the inner circumferential edge 721 and the other end of the outer circumferential edge 722. The second side edge 724 overlaps with the other end of the sub-heater line 231c that constitutes the first sub-zone 710 in the circumferential direction Dc. In this example, the first side edge 723 and the second side edge 724 are linear.

[0127] The central region 711 includes, for example, a center 715 of the first subzone 710. The center 715 is the intersection of a center line RL1 in the radial direction Dr between the inner circumferential end 721 and the outer circumferential end 722 and a center line CL1 in the circumferential direction Dc between the first side end 723 and the second side end 724.

[0128] The central region 711 is a region between a center line RL2 in the radial direction Dr between the inner circumferential end 721 and the center line RL1 and a center line RL3 in the radial direction Dr between the outer circumferential end 722 and the center line RL1, and between a center line CL2 in the circumferential direction Dc between the first side end 723 and the center line CL1 and a center line CL3 in the circumferential direction Dc between the second side end 724 and the center line CL1. In other words, the central region 711 is inside the region surrounded by the center lines RL2, RL3, CL2, and CL3.

[0129] The outer peripheral region 712 is a region located outside the center lines RL2, RL3, CL2, and CL3 (i.e., on the opposite side from the center 715). That is, the outer peripheral region 712 is located between the center line RL2 and the inner peripheral edge 721, between the center line RL3 and the outer peripheral edge 722, between the center line CL2 and the first side edge 723, and between the center line CL3 and the second side edge 724.

[0130] The first main zone 610 includes a first main power feeder 232a, a second main power feeder 232b, and a main heater line 232c. The first main power feeder 232a is provided at a position overlapping with a central region 711 of the first subzone 710 in the Z direction. In this example, the second main power feeder 232b is also provided at a position overlapping with the central region 711 in the Z direction. The second main power feeder 232b may be provided at a position not overlapping with the central region 711 in the Z direction. The second main power feeder 232b may also be provided at a position not overlapping with the first subzone 710 in the Z direction. In this example, the main heater line 232c is provided at a position overlapping with both the central region 711 and the outer peripheral region 712 of the first subzone 710 in the Z direction. The main heater line 232c may also be provided at a position not overlapping with the central region 711 in the Z direction.

[0131] In this specification, the phrase "first main power feeding portion 232a is located so as to overlap central region 711 of first subzone 710 in the Z direction" means that at least a portion of first main power feeding portion 232a overlaps central region 711 of first subzone 710 in the Z direction. In other words, even when first main power feeding portion 232a is located so as to overlap the boundary between central region 711 and peripheral region 712 of first subzone 710 in the Z direction, first main power feeding portion 232a is considered to be located so as to overlap central region 711 of first subzone 710 in the Z direction. In other words, when first main power feeding portion 232a does not overlap even a portion of central region 711 of first subzone 710 in the Z direction, first main power feeding portion 232a is considered to be located so as to overlap peripheral region 712 of first subzone 710 in the Z direction. The same applies to the second main power supply part 232b and the main heater line 232c.

[0132] As described above, in the second heater element 232, current flows through the first main power feeder 232a and the second main power feeder 232b to the main heater line 232c. The main heater line 232c generates heat as a result of the current flow. When the second heater element 232 is heated, the temperatures of the first main power feeder 232a and the second main power feeder 232b tend to be lower than the temperature of the main heater line 232c.

[0133] Furthermore, the heat density tends to be lower in the outer peripheral region 712 of the first sub-zone 710 than in the central region 711. Therefore, when the first heater element 231 is heated, the temperature of the outer peripheral region 712 tends to be lower than the temperature of the central region 711. Therefore, if the first main power feeding portion 232a or the second main power feeding portion 232b is provided at a position overlapping the outer peripheral region 712 of the first sub-zone 710 in the Z direction, there is a problem in that the uniformity of the temperature distribution within the surface of the entire heater section 200 tends to deteriorate.

[0134] In contrast, according to the electrostatic chuck 10 of the embodiment, the first main power supply part 232a, which is likely to have a lower temperature than the main heater line 232c when the second heater element 232 is heated, is provided at a position overlapping in the Z direction with the central region 711 of the first sub-zone 710, which is likely to have a higher temperature than the outer circumferential region 712 of the first sub-zone 710. This can improve the uniformity of the temperature distribution within the surface of the entire heater part 200. This can improve the uniformity of the temperature distribution within the surface of the processing object W.

[0135] FIG. 12 is a plan view schematically showing the positional relationship between another part of the main zone of the second heater element and another part of the sub-zone of the first heater element according to the first embodiment. Figure 12 shows the positional relationship between the main zone 601 in Figure 6 and the sub-zone 701e in Figure 7. Here, an example will be described in which the first main zone 610 is the main zone 601 and the first sub-zone 710 is the sub-zone 701e.

[0136] 12, in this example, an inner circumferential edge 721 of the first subzone 710 is located near the center CT1 of the first heater element 231. The first subzone 710 is a generally sector-shaped region surrounded by an outer circumferential edge 722, a first side edge 723, a second side edge 724, and the inner circumferential edge 721. The first subzone 710 (subzone 701e) shown in FIG. 12 is substantially the same as the first subzone 710 (subzone 702e) shown in FIG. 11 except for the shape, and therefore a description of the central region 711 and the outer circumferential region 712 will be omitted here.

[0137] In this example, first main power feeding portion 232a is also provided at a position overlapping central region 711 of first subzone 710 in the Z direction. On the other hand, in this example, second main power feeding portion 232b is provided at a position not overlapping central region 711 of first subzone 710 in the Z direction. Second main power feeding portion 232b may also be provided at a position overlapping central region 711 of first subzone 710 in the Z direction.

[0138] FIG. 13 is a plan view schematically showing the main zone of the second heater element according to the second embodiment. 13, in this example, the multiple main zones 600 of the second heater element 232 include four main zones 601 to 604 aligned in the radial direction Dr. That is, the second heater element 232 is divided into four in the radial direction Dr. The main zones 600 are arranged in the order of main zone 601, main zone 602, main zone 603, and main zone 604 from the center CT2 of the second heater element 232 outward in the radial direction Dr.

[0139] In a plan view, the main zone 601 has a circular shape centered at a center CT2. In a plan view, the main zone 602 is located outside the main zone 601 and has an annular shape centered at the center CT2. In a plan view, the main zone 603 is located outside the main zone 602 and has an annular shape centered at the center CT2. In a plan view, the main zone 604 is located outside the main zone 603 and has an annular shape centered at the center CT2. In this example, the width LM1 in the radial direction Dr of the main zone 601, the width LM2 in the radial direction Dr of the main zone 602, the width LM3 in the radial direction Dr of the main zone 603, and the width LM4 in the radial direction Dr of the main zone 604 are all different from one another.

[0140] FIG. 14 is a plan view schematically showing a subzone of a first heater element according to the second embodiment. 14, in this example, the multiple subzones 700 of the first heater element 231 include a first region 701 consisting of subzones 701a, a second region 702 consisting of subzones 702a, a third region 703 consisting of subzones 703a, a fourth region 704 consisting of subzones 704a, and a fifth region 705 consisting of subzones 705a. That is, the second heater element 232 is divided into five regions in the radial direction Dr. In this example, the first region 701, the second region 702, the third region 703, the fourth region 704, and the fifth region 705 are not divided in the circumferential direction Dc. The regions are arranged in the following order from the center CT1 of the first heater element 231 outward in the radial direction Dr: the first region 701, the second region 702, the third region 703, the fourth region 704, and the fifth region 705.

[0141] The first region 701 has a circular shape centered on a center CT1 in a planar view. The second region 702 has an annular shape centered on the center CT1 and is located outside the first region 701 in a planar view. The third region 703 has an annular shape centered on the center CT1 and is located outside the second region 702 in a planar view. The fourth region 704 has an annular shape centered on the center CT1 and is located outside the third region 703 in a planar view. The fifth region 705 has an annular shape centered on the center CT1 and is located outside the fourth region 704 in a planar view.

[0142] In this example, the radial width LS1 of the first region 701 in the radial direction Dr, the radial width LS2 of the second region 702 in the radial direction Dr, the radial width LS3 of the third region 703 in the radial direction Dr, the radial width LS4 of the fourth region 704, and the radial width LS5 of the fifth region 705 in the radial direction Dr are all different from one another.

[0143] FIG. 15 is a plan view schematically showing the positional relationship between the main zone of the second heater element and the sub-zone of the first heater element according to the second embodiment. FIG. 16 is a plan view schematically showing the positional relationship between a part of the main zone of the second heater element and a part of the sub-zone of the first heater element according to the second embodiment. Figure 16 shows the positional relationship between the main zone 603 in Figure 13 and the sub-zone 704a in Figure 14. Here, an example will be described in which the first main zone 610 is the main zone 603 and the first sub-zone 710 is the sub-zone 704a.

[0144] 16 , in this example, the first sub-zone 710 is not divided in the circumferential direction Dc. That is, the first sub-zone 710 does not have a first side edge 723 or a second side edge 724. In other words, the first sub-zone 710 is an annular region surrounded by an inner circumferential edge 721 and an outer circumferential edge 722.

[0145] In this example, the central region 711 of the first subzone 710 is the region between a center line RL2 in the radial direction Dr between the inner circumferential end 721 and the center line RL1, and a center line RL3 in the radial direction Dr between the outer circumferential end 722 and the center line RL1. In other words, the central region 711 is inside the region surrounded by the center lines RL2 and RL3. The center line RL1 is the center line in the radial direction Dr between the inner circumferential end 721 and the outer circumferential end 722.

[0146] In this example, the outer peripheral region 712 of the first sub-zone 710 is located between the centerline RL2 and the inner peripheral edge 721, and between the centerline RL3 and the outer peripheral edge 722.

[0147] In this example, first main power feeding portion 232a is also provided at a position overlapping central region 711 of first subzone 710 in the Z direction. Also in this example, second main power feeding portion 232b is also provided at a position overlapping central region 711 of first subzone 710 in the Z direction. Second main power feeding portion 232b may be provided at a position not overlapping central region 711 of first subzone 710 in the Z direction. Also, second main power feeding portion 232b may be provided at a position not overlapping first subzone 710 in the Z direction.

[0148] FIG. 17 is a plan view schematically showing the positional relationship between another part of the main zone of the second heater element and another part of the sub-zone of the first heater element according to the second embodiment. Figure 17 shows the positional relationship between the main zone 601 in Figure 13 and the sub-zone 701a in Figure 14. Here, an example will be described in which the first main zone 610 is the main zone 601 and the first sub-zone 710 is the sub-zone 701a.

[0149] 17 , in this example, the first subzone 710 is a circular region centered on the center CT1 of the first heater element 231 and surrounded by an outer circumferential edge 722. In other words, the first subzone 710 does not have an inner circumferential edge 721, a first side edge 723, or a second side edge 724. Furthermore, the center 715 of the first subzone 710 coincides with the center CT1 of the first heater element 231.

[0150] In this example, the central region 711 of the first subzone 710 is within a region surrounded by a center line RL1 in the radial direction Dr between the center 715 and the outer peripheral edge 722 of the first subzone 710. In other words, the central region 711 is a concentric circle of the first subzone 710 and is a circular region having a radius half that of the first subzone 710.

[0151] In this example, the outer circumferential region 712 of the first sub-zone 710 is a region located outside the center line RL1 (i.e., on the opposite side from the center 715). In other words, the outer circumferential region 712 is located between the center line RL1 and the outer circumferential edge 722.

[0152] In this example, first main power feeding portion 232a is also provided at a position overlapping central region 711 of first subzone 710 in the Z direction. Also in this example, second main power feeding portion 232b is also provided at a position overlapping central region 711 of first subzone 710 in the Z direction. Second main power feeding portion 232b may be provided at a position not overlapping central region 711 of first subzone 710 in the Z direction. Also, second main power feeding portion 232b may be provided at a position not overlapping first subzone 710 in the Z direction.

[0153] FIG. 18 is a plan view schematically showing the positional relationship between the main zone of the second heater element and the sub-zone of the first heater element according to the third embodiment. 18, in this example, the first heater element 231 is divided into a grid pattern. The multiple subzones 700 of the first heater element 231 include a first region 701 consisting of subzones 701a to 701d, a second region 702 consisting of subzones 702a to 702m, and a third region 703 consisting of subzones 703a to 703q. The regions are arranged in the order of first region 701, second region 702, and third region 703 from a center CT1 of the first heater element 231 outward in the radial direction Dr.

[0154] Each of the subzones 701a to 701d and the subzones 702a to 702m has a quadrangular shape in plan view.

[0155] FIG. 19 is a plan view schematically illustrating a part of a subzone of a first heater element according to the third embodiment. Figure 19 shows an enlarged view of a portion of subzone 701a in Figure 15. Here, an example will be described in which first subzone 710 is subzone 701d.

[0156] 19, in this example, the first subzone 710 is a rectangular region surrounded by a first side 716a, a second side 716b, a third side 716c, and a fourth side 716d. The first subzone 710 has a first corner 717a formed by the first side 716a and the second side 716b, a second corner 717b formed by the second side 716b and the third side 716c, a third corner 717c formed by the third side 716c and the fourth side 716d, and a fourth corner 717d formed by the fourth side 716d and the first side 716a.

[0157] The central region 711 of the first sub-zone 710 includes, for example, a center 715 of the first sub-zone 710. The center 715 is the intersection of a diagonal line DL1 connecting the first corner 717a and the third corner 717c and a diagonal line DL2 connecting the second corner 717b and the fourth corner 717d.

[0158] In this example, the central region 711 is within the region connecting the first midpoint 718a, which is the midpoint between the center 715 and the first corner 717a, the second midpoint 718b, which is the midpoint between the center 715 and the second corner 717b, the third midpoint 718c, which is the midpoint between the center 715 and the third corner 717c, and the fourth midpoint 718d, which is the midpoint between the center 715 and the fourth corner 717d. That is, the central region 711 is within the region surrounded by a fifth side 716e connecting the fourth midpoint 718d and the first midpoint 718a, a sixth side 716f connecting the first midpoint 718a and the second midpoint 718b, a seventh side 716g connecting the second midpoint 718b and the third midpoint 718c, and an eighth side 716h connecting the third midpoint 718c and the fourth midpoint 718d.

[0159] In this example, the outer periphery region 712 is a region located outside the fifth side 716e, the sixth side 716f, the seventh side 716g, and the eighth side 716h (i.e., on the opposite side from the center 715). That is, the outer periphery region 712 is located between the first side 716a and the fifth side 716e, between the second side 716b and the sixth side 716f, between the third side 716c and the seventh side 716g, and between the fourth side 716d and the eighth side 716h.

[0160] In this example, first main power feeding portion 232a is also provided at a position overlapping central region 711 of first subzone 710 in the Z direction. Also in this example, second main power feeding portion 232b is also provided at a position overlapping central region 711 of first subzone 710 in the Z direction. Second main power feeding portion 232b may be provided at a position not overlapping central region 711 of first subzone 710 in the Z direction. Also, second main power feeding portion 232b may be provided at a position not overlapping first subzone 710 in the Z direction.

[0161] FIG. 20 is a plan view schematically illustrating a part of a subzone of the first heater element according to the first embodiment. Figure 20 shows an enlarged view of subzone 702e in Figure 7. Here, an example will be described in which first subzone 710 is subzone 702e.

[0162] 20 , the first sub-zone 710 includes a first sub-power feed portion 231a, a second sub-power feed portion 231b, and a sub-heater line 231c. At least one of the first sub-power feed portion 231a and the second sub-power feed portion 231b is provided in the central region 711. In this example, both the first sub-power feed portion 231a and the second sub-power feed portion 231b are provided in the central region 711. Either the first sub-power feed portion 231a or the second sub-power feed portion 231b may be provided in the outer circumferential region 712. In this example, the sub-heater line 231c is provided in both the central region 711 and the outer circumferential region 712.

[0163] In this specification, the phrase "the first sub-power supply portion 231a is provided in the central region 711" means that at least a portion of the first sub-power supply portion 231a overlaps with the central region 711 in the Z direction. The same applies to the second sub-power supply portion 231b and the sub-heater line 231c.

[0164] As with the second heater element 232, when the first heater element 231 is heated, the temperatures of the first sub-power feeder 231a and the second sub-power feeder 231b tend to be lower than the temperature of the sub-heater line 231c. Therefore, by providing the first sub-power feeder 231a and the second sub-power feeder 231b, which tend to be lower in temperature than the sub-heater line 231c, in the central region 711, which tends to be higher in temperature than the peripheral region 712, it is possible to improve the uniformity of the temperature distribution within the surface of the first sub-zone 710. This further improves the uniformity of the temperature distribution within the surface of the entire heater section 200.

[0165] Furthermore, by providing both the first sub-power supply portion 231a and the second sub-power supply portion 231b in the central region 711, it is possible to further improve the uniformity of the temperature distribution within the surface of the first sub-zone 710. This makes it possible to further improve the uniformity of the temperature distribution within the surface of the entire heater portion 200.

[0166] FIG. 21 is a plan view schematically illustrating the positional relationship between the sub-heater line of the first heater element and the first main power supply portion of the second heater element according to the embodiment. 21, the second heater element 232 is provided so as to overlap the first heater element 231 in the Z direction. In this example, the second heater element 232 is provided below the first heater element 231.

[0167] The first main power feeder 232a of the second heater element 232 is provided, for example, at a position overlapping in the Z direction with the sub-heater line 231c of the first heater element 231. Furthermore, the main heater line 232c of the second heater element 232 is provided, for example, at a position overlapping in the Z direction with the sub-heater line 231c of the first heater element 231. In other words, the sub-heater line 231c of the first heater element 231 is provided, for example, above the first main power feeder 232a and main heater line 232c of the second heater element 232.

[0168] In this way, by arranging the first main power supply section 232a at a position overlapping with the sub-heater line 231c in the Z direction, the low temperature of the first main power supply section 232a can be compensated for by the heat of the sub-heater line 231c, and the uniformity of the temperature distribution within the entire surface of the heater section 200 can be further improved.

[0169] FIG. 22 is a plan view schematically showing the positional relationship between a part of the main zone of the second heater element and a part of the sub-zone of the first heater element according to a modified example of the first embodiment. 22, in this example, first sub power feeding unit 231a is provided at a position where a portion thereof overlaps with central region 711 and another portion thereof overlaps with outer peripheral region 712. Second sub power feeding unit 231b is provided at a position where a portion thereof overlaps with central region 711 and another portion thereof overlaps with outer peripheral region 712. First main power feeding unit 232a is provided at a position where a portion thereof overlaps with central region 711 and another portion thereof overlaps with outer peripheral region 712.

[0170] Here, the area of first sub power feeding unit 231a overlapping with central region 711 is denoted by Sa1, and the area of first sub power feeding unit 231a overlapping with peripheral region 712 is denoted by Sa2. The area Sa of first sub power feeding unit 231a in a plan view is expressed as Sa = Sa1 + Sa2. Area Sa1 may be 0. That is, first sub power feeding unit 231a does not have to overlap with central region 711. Alternatively, area Sa2 may be 0. That is, first sub power feeding unit 231a does not have to overlap with peripheral region 712.

[0171] Similarly, the area of second sub power feeding unit 231b that overlaps with central region 711 is defined as Sb1, and the area of second sub power feeding unit 231b that overlaps with peripheral region 712 is defined as Sb2. The area Sb of second sub power feeding unit 231b in a plan view is expressed as Sb = Sb1 + Sb2. Area Sb1 may be 0. That is, second sub power feeding unit 231b does not have to overlap with central region 711. Alternatively, area Sb2 may be 0. That is, second sub power feeding unit 231b does not have to overlap with peripheral region 712.

[0172] Similarly, the area of first main power feeding part 232a that overlaps with central region 711 is denoted as Sc1, and the area of first main power feeding part 232a that overlaps with outer peripheral region 712 is denoted as Sc2. The area Sc of first main power feeding part 232a in a plan view is expressed as Sc = Sc1 + Sc2. Area Sc1 is greater than 0. That is, at least a portion of first main power feeding part 232a overlaps with central region 711. Area Sc2 may be 0. That is, first main power feeding part 232a does not have to overlap with outer peripheral region 712.

[0173] For example, the sum of area Sa1, area Sb1, and area Sc1 (S1 = Sa1 + Sb1 + Sc1) is preferably greater than the sum of area Sa2, area Sb2, and area Sc2 (S2 = Sa2 + Sb2 + Sc2) (S1 > S2). In other words, the sum of the areas of the power feeding parts overlapping with central region 711 is preferably greater than the sum of the areas of the power feeding parts overlapping with peripheral region 712.

[0174] In this way, by making the total area of the power supply parts overlapping with the central region 711 larger than the total area of the power supply parts overlapping with the peripheral region 712, the power supply parts, which tend to have a low temperature, can be moved closer to the central region 711, which has a relatively high temperature within the zone. This further improves the uniformity of the temperature distribution within the entire surface of the heater section 200.

[0175] For example, the area Sc is larger than the area Sa and larger than the area Sb (Sc>Sa, Sc>Sb). Also, for example, the area Sc is larger than the sum of the area Sa and the area Sb (Sc>Sa+Sb). For example, the area Sa is equal to the area Sb (Sa=Sb).

[0176] FIG. 23 is a plan view schematically illustrating a part of the second heater element according to the embodiment. 23, in the second heater element 232, the first main power supply 232a is provided at one end of the main heater line 232c, and the second main power supply 232b is provided at the other end of the main heater line 232c.

[0177] The "power supply portion" is a portion that is provided at the start and end points of the heater line and is electrically connected to the power supply terminal 280. The power supply portion itself does not generate heat. The power supply portion and the power supply terminal 280 may be physically connected, or the power supply portion and the bypass layer 250 may be physically connected by, for example, welding or soldering, thereby physically connecting the bypass layer 250 and the power supply terminal 280.

[0178] In a plan view, the width LW1 of the first main power feeder 232a is larger than the width LW3 of the main heater line 232c. That is, the portion of the end of the main heater line 232c having the width LW1 larger than the width LW3 of the main heater line 232c is the first main power feeder 232a. Here, the "width" refers to the maximum length in a direction perpendicular to the direction in which the main heater line 232c extends from the connection between the first main power feeder 232a and the main heater line 232c. Note that if the direction in which the main heater line 232c extends from the connection is curved, the "width" refers to the maximum length in a direction perpendicular to the tangent to the curve.

[0179] Similarly, in a plan view, the width LW2 of the second main power feeder 232b is larger than the width LW3 of the main heater line 232c. That is, the portion of the end of the main heater line 232c having the width LW2 larger than the width LW3 of the main heater line 232c is the second main power feeder 232b. Here, the "width" refers to the maximum length in a direction perpendicular to the direction in which the main heater line 232c extends from the connection between the second main power feeder 232b and the main heater line 232c. Note that if the direction in which the main heater line 232c extends from the connection is curved, the "width" refers to the maximum length in a direction perpendicular to the tangent to the curve.

[0180] In this example, the first main power feeding section 232a and the second main power feeding section 232b have a circular shape in plan view. The shape of the first main power feeding section 232a and the second main power feeding section 232b in plan view is not limited to a circular shape and may be an elliptical shape, a polygonal shape, or the like.

[0181] For example, when the second heater element 232 is heated, the temperatures of the first main power feeder 232a and the second main power feeder 232b are lower than the temperature of the main heater line 232c. That is, the heat generation amount of the first main power feeder 232a and the second main power feeder 232b is smaller than the heat generation amount of the main heater line 232c.

[0182] The first sub-power feeder 231a, the second sub-power feeder 231b, and the sub-heater line 231c of the first heater element 231 are similar to the first main power feeder 232a, the second main power feeder 232b, and the main heater line 232c of the second heater element 232. That is, in a plan view, the width of the first sub-power feeder 231a is larger than the width of the sub-heater line 231c. In addition, in a plan view, the width of the second sub-power feeder 231b is larger than the width of the sub-heater line 231c. In addition, the shape of the first sub-power feeder 231a and the second sub-power feeder 231b in a plan view may be circular, elliptical, polygonal, or the like.

[0183] For example, when the first heater element 231 is heated, the temperature of the first sub-power feed portion 231a and the temperature of the second sub-power feed portion 231b are lower than the temperature of the sub-heater line 231c. In other words, the heat generation amount of the first sub-power feed portion 231a and the heat generation amount of the second sub-power feed portion 231b are smaller than the heat generation amount of the sub-heater line 231c.

[0184] FIG. 24 is a plan view schematically showing the positional relationship between a part of the main zone of the second heater element and a part of the sub-zone of the first heater element according to a modified example of the first embodiment. As shown in FIG. 24, the first main zone 610 may have lift pin holes 614a provided to allow lift pins (not shown) for supporting the workpiece W to pass through. In the lift pin holes 614a, the main heater line 232c is curved so as to bypass the portion where the lift pins are provided. The lift pin holes 614a are provided, for example, at a position overlapping with the central region 711 of the first sub-zone 710 in the Z direction. Note that the lift pin holes 614a may also be provided, for example, at a position not overlapping with the central region 711 of the first sub-zone 710 in the Z direction. The lift pin holes 614a are provided as needed and can be omitted.

[0185] The first main zone 610 may also have an adsorption electrode terminal hole 614b through which an adsorption electrode terminal (not shown) for supplying current to the adsorption electrode (electrode layer 111) can pass. The main heater line 232c is curved in the adsorption electrode terminal hole 614b so as to bypass the portion where the adsorption electrode terminal is provided. The adsorption electrode terminal hole 614b is provided, for example, at a position overlapping with the central region 711 of the first subzone 710 in the Z direction. Note that the adsorption electrode terminal hole 614b may also be provided, for example, at a position not overlapping with the central region 711 of the first subzone 710 in the Z direction. The adsorption electrode terminal hole 614b is provided as needed and can be omitted.

[0186] The first main zone 610 may also have a cooling gas hole 614c that allows a cooling gas for cooling the workpiece W to pass through. The cooling gas hole 614c, for example, constitutes a part of the introduction path 321. The main heater line 232c is curved around the cooling gas hole 614c so as to bypass the portion through which the cooling gas passes. The cooling gas hole 614c is provided, for example, at a position that overlaps with the central region 711 of the first sub-zone 710 in the Z direction. Note that the cooling gas hole 614c may also be provided, for example, at a position that does not overlap with the central region 711 of the first sub-zone 710 in the Z direction. The cooling gas hole 614c is provided as needed and can be omitted.

[0187] In this specification, the phrase "the lift pin holes 614a are provided at positions overlapping with the central region 711 of the first subzone 710 in the Z direction" means that at least a portion of the lift pin holes 614a overlaps with the central region 711 in the Z direction. The same applies to the chucking electrode terminal holes 614b and the cooling gas holes 614c.

[0188] In this way, the lift pin holes 614a, the suction electrode terminal holes 614b, and the cooling gas holes 614c, which tend to have lower temperatures than other parts when the second heater element 232 is heated because the main heater line 232c is not provided, are provided at positions that overlap in the Z direction with the central region 711 of the first subzone 710, which tends to have higher temperatures than the peripheral region 712 of the first subzone 710, thereby improving the uniformity of the temperature distribution across the entire surface of the heater section 200.

[0189] The first main zone 610 may have one, two or more, or three of the lift pin holes 614a, suction electrode terminal holes 614b, and cooling gas holes 614c. The number of each of the lift pin holes 614a, suction electrode terminal holes 614b, and cooling gas holes 614c provided in the first main zone 610 may be one, two or more.

[0190] FIG. 25 is a cross-sectional view schematically illustrating a part of the heater unit according to the embodiment. 25, in this example, the second heater element 232 is provided between the bypass layer 250 and the first heater element 231 in the Z direction. In addition, a second insulating layer 240 is provided between the first heater element 231 and the second heater element 232. In addition, a third insulating layer 245 is provided between the second heater element 232 and the bypass layer 250.

[0191] The third insulating layer 245 has holes 245h that penetrate in the Z direction. The second heater element 232 is electrically connected to the bypass layer 250 at the holes 245h. That is, the bypass layer 250 is in direct contact with the first main power feed portion 232a at the holes 245h, and is thereby electrically connected to the first main power feed portion 232a.

[0192] Providing such holes 245h allows the bypass layer 250 and the second heater element 232 (first main power feed portion 232a) to be in direct contact with each other, even if the third insulating layer 245 is provided between the bypass layer 250 and the second heater element 232. Furthermore, the bypass layer 250 is in direct contact with the first main power feed portion 232a and is electrically connected to the first main power feed portion 232a, which increases the degree of freedom in arranging the power feed terminal 280 compared to when the power feed terminal 280 and the power feed portion (first main power feed portion 232a or second main power feed portion 232b) are directly connected.

[0193] FIG. 26 is a cross-sectional view schematically illustrating a wafer processing apparatus according to an embodiment. 26, a wafer processing apparatus 500 according to the embodiment includes a processing vessel 501, an upper electrode 510, and an electrostatic chuck 10. A processing gas inlet 502 for introducing a processing gas into the processing vessel 501 is provided in the ceiling of the processing vessel 501. An exhaust port 503 for evacuating the interior of the processing vessel 501 is provided in the bottom plate of the processing vessel 501. A high-frequency power supply 504 is connected to the upper electrode 510 and the electrostatic chuck 10, and the pair of electrodes including the upper electrode 510 and the electrostatic chuck 10 face each other in parallel with a predetermined distance therebetween.

[0194] In the wafer processing apparatus 500, when a high-frequency voltage is applied between the upper electrode 510 and the electrostatic chuck 10, a high-frequency discharge occurs, and the processing gas introduced into the processing vessel 501 is excited and activated by the plasma, thereby processing the processing object W. An example of the processing object W is a semiconductor substrate (wafer). However, the processing object W is not limited to a semiconductor substrate (wafer), and may be, for example, a glass substrate used in a liquid crystal display device.

[0195] The high-frequency power supply 504 is electrically connected to the base plate 300 of the electrostatic chuck 10. As described above, the base plate 300 is made of a metal material such as aluminum. That is, the base plate 300 is conductive. As a result, a high-frequency voltage is applied between the upper electrode 410 and the base plate 300.

[0196] In this example, the base plate 300 is electrically connected to the first support plate 210 and the second support plate 270. As a result, in the wafer processing apparatus 500, a high-frequency voltage is applied between the first support plate 210 and the upper electrode 510, and between the second support plate 270 and the upper electrode 510.

[0197] In this way, a high-frequency voltage is applied between each of the support plates 210, 270 and the upper electrode 510. This allows the location to which the high-frequency voltage is applied to be closer to the processing object W than when the high-frequency voltage is applied only between the base plate 300 and the upper electrode 510. This allows, for example, to generate plasma more efficiently and at a lower potential.

[0198] An apparatus having a configuration similar to that of the wafer processing apparatus 500 is generally called a parallel-plate RIE (Reactive Ion Etching) apparatus, but the electrostatic chuck 10 according to the embodiment is not limited to application to this apparatus. For example, the electrostatic chuck 10 can be widely applied to so-called reduced pressure processing apparatuses, such as an ECR (Electron Cyclotron Resonance) etching apparatus, an inductively coupled plasma processing apparatus, a helicon wave plasma processing apparatus, a plasma separation type plasma processing apparatus, a surface wave plasma processing apparatus, and a plasma CVD (Chemical Vapor Deposition) apparatus. Such a wafer processing apparatus 500 is used, for example, in the manufacture of semiconductor devices. The wafer processing apparatus 500 is used, for example, as a semiconductor manufacturing apparatus.

[0199] The electrostatic chuck 10 according to the embodiment can also be widely applied to substrate processing apparatuses in which processing or inspection is performed under atmospheric pressure, such as exposure apparatuses and inspection apparatuses. However, considering the high plasma resistance of the electrostatic chuck 10 according to the embodiment, it is preferable to apply the electrostatic chuck 10 to a plasma processing apparatus. Note that, among the configurations of these apparatuses, well-known configurations can be applied to parts other than the electrostatic chuck 10 according to the embodiment, and therefore, description thereof will be omitted.

[0200] In this way, by providing the electrostatic chuck 10 in which the first main power supply part 232a, which is likely to have a lower temperature than the main heater line 232c when the second heater element 232 is heated, is located at a position overlapping in the Z direction with the central region 711 of the first sub-zone 710, which is likely to have a higher temperature than the outer circumferential region 712 of the first sub-zone 710, it is possible to improve the uniformity of the temperature distribution within the surface of the entire heater part 200. This makes it possible to improve the uniformity of the temperature distribution within the surface of the processing object W.

[0201] FIG. 27 is an exploded cross-sectional view schematically illustrating a heater portion according to a modified example of the embodiment. 27, the heater section 200A according to the modified embodiment differs from the heater section 200 shown in Fig. 5 in that independent temperature control is performed in each sub-zone (region) 700 of the first heater element 231, and independent temperature control is performed in each main zone 600 of the second heater element 232. Note that a description of the same configuration as the heater section 200 shown in Fig. 5 will be omitted.

[0202] In this example, ten power supply terminals 280a to 280j are provided as the power supply terminal 280. Also, in this example, the bypass layer 250 has ten bypass portions 251a to 251j.

[0203] The first heater element 231 has a first region 701 and a second region 702. The first region 701 and the second region 702 each have a first sub-power feed portion 231a, a second sub-power feed portion 231b, and a sub-heater line 231c.

[0204] The second heater element 232 has a main zone 601, a main zone 602, and a main zone 603. Each of the main zones 601 to 603 has a first main power feeder 232a, a second main power feeder 232b, and a main heater line 232c.

[0205] As indicated by arrows C21 and C22, when power is supplied to the power supply terminal 280a from outside the electrostatic chuck 10, current flows from the power supply terminal 280a to the bypass portion 251a. As indicated by arrows C23 and C24, the current flowing to the bypass portion 251a flows from the bypass portion 251a to the first region 701 of the first heater element 231. As indicated by arrows C25 and C26, the current flowing to the first region 701 flows from the first region 701 to the bypass portion 251b. More specifically, the current flowing to the bypass portion 251a flows to the sub-heater line 231c of the first region 701 via the first sub-power supply portion 231a of the first region 701, and then flows to the bypass portion 251b via the second sub-power supply portion 231b of the first region 701. As indicated by arrows C27 and C28, the current flowing to the bypass portion 251b flows from the bypass portion 251b to the power supply terminal 280b. As indicated by arrow C29, the current flowing to the power supply terminal 280b flows to the outside of the electrostatic chuck 10.

[0206] Similarly, when power is supplied to the power supply terminal 280c from outside the electrostatic chuck 10, current flows in the order of the power supply terminal 280c, the bypass portion 251c, the second region 702 of the first heater element 231, the bypass portion 251d, and the power supply terminal 280d, as shown by arrows C31 to C39.

[0207] Similarly, when power is supplied to the power supply terminal 280e from outside the electrostatic chuck 10, current flows in the order of the power supply terminal 280e, the bypass portion 251e, the main zone 601 of the second heater element 232, the bypass portion 251f, and the power supply terminal 280f, as shown by arrows C41 to C49.

[0208] Similarly, when power is supplied to the power supply terminal 280g from outside the electrostatic chuck 10, current flows in the order of the power supply terminal 280g, the bypass portion 251g, the main zone 602 of the second heater element 232, the bypass portion 251h, and the power supply terminal 280h, as shown by arrows C51 to C59.

[0209] Similarly, when power is supplied to the power supply terminal 280i from outside the electrostatic chuck 10, current flows in the order of the power supply terminal 280i, the bypass portion 251i, the main zone 603 of the second heater element 232, the bypass portion 251j, and the power supply terminal 280j, as shown by arrows C61 to C69.

[0210] For example, by applying different voltages to power supply terminals 280a and 280c, it is possible to make the output of first region 701 different from the output of second region 702. In other words, it is possible to control the output of each sub-zone (region) 700 independently.

[0211] For example, by differentiating the voltage applied to power supply terminal 280e, the voltage applied to power supply terminal 280g, and the voltage applied to power supply terminal 280i, it is possible to differentiate the output of main zone 601, the output of main zone 602, and the output of main zone 603. In other words, the output of each main zone 600 can be controlled independently.

[0212] As described above, according to the embodiments, an electrostatic chuck and a semiconductor manufacturing apparatus are provided that can improve the uniformity of the temperature distribution within the surface of the processing object.

[0213] The above describes the embodiments of the present invention. However, the present invention is not limited to these descriptions. Design modifications made by a person skilled in the art to the above-described embodiments are also included within the scope of the present invention as long as they include the features of the present invention. For example, the shape, dimensions, materials, arrangement, installation form, etc. of each element of the electrostatic chuck are not limited to those exemplified and can be modified as appropriate. Furthermore, the elements of each of the above-described embodiments can be combined to the extent technically possible, and such combinations are also included within the scope of the present invention as long as they include the features of the present invention. [Explanation of symbols]

[0214] 10 electrostatic chuck, 100 ceramic dielectric substrate, 101 first main surface, 102 second main surface, 111 electrode layer (chucking electrode), 113 convex portion, 115 groove, 200, 200A heater portion, 210 first support plate, 211 surface, 220 first insulating layer, 231 first heater element, 231a, 231b first and second sub-power feed portions, 231c sub-heater line, 231e outer periphery, 232 second heater element, 232a, 232b first and second main power feed portions, 232c main heater line, 232e outer periphery, 240 second insulating layer, 245 third insulating layer, 245h hole portion, 250 bypass layer, 251, 251a to 251j bypass portion, 260 fourth insulating layer, 270 second support plate, 271 surface, 273 holes, 280, 280a to 280j power supply terminal, 300 base plate, 301 communication path, 303 lower surface, 321 inlet path, 403 adhesive layer, 410 upper electrode, 500 semiconductor manufacturing apparatus, 501 processing vessel, 502 processing gas inlet, 503 exhaust port, 504 high frequency power supply, 510 upper electrode, 600, 601 to 604 main zone, 610 first main zone, 614a lift pin hole, 614b suction electrode terminal hole, 614c cooling gas hole, 700, 701a to 701f, 702a to 702m, 703a to 703q, 704a, 705a subzones, 701 to 705 1st to 5th regions, 710 1st subzone, 711 central region, 712 outer peripheral region, 715 center, 716a to 716h 1st to 8th sides, 717a to 717d 1st to 4th corners, 718a to 718d 1st to 4th midpoints, 721 inner peripheral edge, 722 outer peripheral edge, 723, 724 1st and 2nd side edges, CL1 to CL3 center lines, CT1, CT2 center, Dc circumferential direction, Dr radial direction, DL1, DL2 diagonal lines, LM1 to LM4, LS1 to LS5 radial widths, LW1 to LW3 Width, RL1~RL3 Center line, Sa, Sa1, Sa2, Sb, Sb1, Sb2, Sc, Sc1, Sc2 Area, W Processing object

Claims

1. a ceramic dielectric substrate having a first main surface on which an object to be processed is placed and a second main surface opposite to the first main surface; a base plate supporting the ceramic dielectric substrate; a heater portion for heating the ceramic dielectric substrate; Equipped with the heater section has a heater element provided with a heater line that generates heat when a current flows through it, the heater line includes a first folded portion and a second folded portion, at least a portion of which is arranged to face the first folded portion in a circumferential direction, the first folded portion includes a pair of first circumferential heater line portions extending in a circumferential direction and a first radial heater line portion connecting end portions of the pair of first circumferential heater line portions, the second folded portion includes a pair of second circumferential heater line portions extending in a circumferential direction and a second radial heater line portion connecting end portions of the pair of second circumferential heater line portions, an outer imaginary line, which is a circumferential extension of a first outer circumferential heater line portion, which is located on the outer circumferential side of the pair of first circumferential heater line portions, does not overlap with a second outer circumferential heater line portion, which is located on the outer circumferential side of the pair of second circumferential heater line portions, an inner virtual line, which is a circumferential extension of a first inner circumferential heater line portion, which is one of the pair of first circumferential heater line portions and is located on the inner circumferential side in the circumferential direction, does not overlap with the second outer circumferential heater line portion; The electrostatic chuck according to claim 1, wherein the inner imaginary line does not overlap with a second inner circumferential heater line portion, which is one of the pair of second circumferential heater line portions and is located on the inner side in the circumferential direction.

2. An electrostatic chuck as described in claim 1, characterized in that the heater line is not arranged between the first folded portion and the second folded portion.

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