Intermittent stagnation flow

Abstract

A method for removing residual deposits from a reaction chamber includes supplying a cleaning gas into the reaction chamber by direct supply from a remote plasma source (RPS). The cleaning gas forms a plurality of gas flow streamlines within the reaction chamber. Each streamline originates at an injection point for receiving the cleaning gas and terminates at a chamber pump port coupled to a foreline for exhausting the cleaning gas. The flow characteristics of the cleaning gas are modified to redirect at least some of the gas flow streamlines to circulate adjacent an inner periphery of the reaction chamber to remove residual deposits or promote diffusion of cleaning species to the surface to be cleaned. The inner periphery is disposed along one or more vertical planes of the reaction chamber that are perpendicular to a horizontal plane containing the injection point.

Description

[Technical Field]

[0001] [Priority Claim] This application claims the benefit of priority to U.S. Provisional Patent Application No. 62 / 705,519, filed July 1, 2020, which is incorporated herein by reference in its entirety.

[0002] The subject matter disclosed herein generally relates to systems, methods, apparatus, and machine-readable media related to cleaning the interior surfaces of a reaction chamber from residual deposits using an intermittent stagnation flow of a cleaning gas. [Background technology]

[0003] Semiconductor substrate processing equipment is used to process semiconductor substrates by techniques including etching, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PEALD), pulsed deposited layer (PDL), plasma-enhanced pulsed deposited layer (PEPDL) processing, and resist removal.

[0004] During semiconductor substrate processing, the presence of precursor gases in a reaction chamber can lead to residual deposits on the chamber's interior surfaces. For example, a reaction chamber can become covered with carbon residue deposits after an amorphous hard mask (AHM) treatment is applied to the substrate. In conventional chamber cleaning techniques, a significant portion of the cleaning gas introduced into the reaction chamber, such as remote plasma source (RPS)-activated cleaning gas radical species (e.g., atomic oxygen or fluorine), escapes the chamber before diffusing to the chamber surfaces and reacting with the residual deposits on the chamber walls that need to be removed.

[0005] The description of the background art presented herein is intended to provide a general overview of the contents of the present disclosure. It should be noted that the information set forth in this Background section is presented to provide those skilled in the art with some context regarding the subject matter of the following disclosure and should not be considered admitted prior art. More specifically, work by the currently named inventors within the scope described in this Background section, as well as aspects of the description that may not otherwise be considered prior art at the time of filing, are not admitted, expressly or impliedly, as prior art against the present disclosure. Summary of the Invention

[0006] A semiconductor substrate processing method, system, and computer program product are presented, including techniques for heater design solutions for chemical delivery systems for chemical separation chambers used to process semiconductor substrates.

[0007] In an exemplary embodiment, a method for removing residual deposits from a reaction chamber includes supplying a cleaning gas into the reaction chamber by direct supply from a remote plasma source (RPS). The cleaning gas forms multiple gas flow streamlines within the reaction chamber. Each gas flow streamline of the multiple gas flow streamlines originates at an injection point fluidly coupled to the RPS to receive the cleaning gas and terminates at a chamber pump port coupled to a foreline for exhausting the cleaning gas from the reaction chamber. At least one flow characteristic of the cleaning gas (e.g., an effective pumping speed or pressure of the reaction chamber) is modified to redirect at least some of the multiple gas flow streamlines to circulate proximate an inner periphery of the reaction chamber to remove residual deposits. The inner periphery may be disposed along one or more vertical planes of the reaction chamber, the one or more vertical planes being perpendicular to a horizontal plane of the reaction chamber including the injection point.

[0008] In another exemplary embodiment, a semiconductor substrate processing apparatus includes a remote plasma source (RPS) configured to generate a cleaning gas. The semiconductor substrate processing apparatus further includes a reaction chamber in which a semiconductor substrate is processed and a residual deposit is formed. The reaction chamber is fluidly coupled to the remote plasma source to directly supply a cleaning gas into the reaction chamber through a downtube. The semiconductor substrate processing apparatus further includes a pump fluidly coupled to the reaction chamber through a foreline. The pump is configured to control exhaust of the cleaning gas from the reaction chamber. The foreline may terminate at a chamber pump port of the reaction chamber. The semiconductor substrate processing apparatus further includes a gate valve fluidly coupled to the reaction chamber and the pump through the foreline. The semiconductor substrate processing apparatus further includes a controller module coupled to the RPS, the reaction chamber, the gate valve, and the pump. The controller module is configured to cause the RPS to supply the cleaning gas into the reaction chamber through the downtube. The cleaning gas forms multiple gas flow streamlines in the reaction chamber. Each of the multiple gas flow streamlines originates at an injection point of the downtube and terminates at a chamber pump port. The controller module is configured to modify at least one flow characteristic of the cleaning gas and redirect at least some of the streamlines of the plurality of gas streams to circulate proximate an inner periphery of the reaction chamber to remove residual deposits. The inner periphery may be located on or proximate to (or along) one or more vertical surfaces of the reaction chamber. The one or more vertical surfaces are planes orthogonal to a horizontal surface of the reaction chamber that includes the injection point.

[0009] In yet another exemplary embodiment, a method for removing residual deposits from a reaction chamber includes supplying a cleaning gas into the reaction chamber by direct supply from a remote plasma source (RPS). The cleaning gas forms a plurality of gas flow streamlines within the reaction chamber. A cleaning uniformity associated with removing the residual deposits from the reaction chamber by the cleaning gas is detected. Based on the cleaning uniformity, a duration of an opening period and a duration of a closing period of a gate valve of the reaction chamber are controlled to adjust the movement or position of the gas flow streamlines within the reaction chamber and to adjust an effective pumping speed of the cleaning gas. [Brief explanation of the drawings]

[0010] The various figures of the accompanying drawings merely illustrate exemplary embodiments of the present disclosure and are not to be considered as limiting its scope.

[0011] [Figure 1] FIG. 1 is a functional block diagram of an example substrate processing system in which embodiments of the present disclosure may be used.

[0012] [Figure 2A] FIG. 2A is a functional block diagram of a reaction chamber of a substrate processing system that can manipulate gas flow streamlines during a cleaning cycle to remove residual deposits, according to an example embodiment. [Figure 2B] FIG. 2B is a functional block diagram of a reaction chamber of a substrate processing system that can manipulate gas flow streamlines during a cleaning cycle to remove residual deposits, according to an example embodiment. [Figure 2C] FIG. 2C is a functional block diagram of a reaction chamber of a substrate processing system that can manipulate gas flow streamlines during a cleaning cycle to remove residual deposits, according to an example embodiment.

[0013] [Figure 3]FIG. 3 is a diagram of a top view of a reaction chamber having multiple pedestals, as well as a slit valve port and filler plate, that can be cleaned from residual deposits using the techniques of the present disclosure, according to an exemplary embodiment.

[0014] [Figure 4] FIG. 4 is a perspective view showing a slit valve port and inner periphery along a vertical surface of a reaction chamber that can be cleaned of residual deposits using the techniques of the present disclosure, according to an exemplary embodiment.

[0015] [Figure 5] FIG. 5 is a graph illustrating the variation of substrate average etch rate (as an indication of residual deposit removal rate) with chamber pressure, according to an example embodiment.

[0016] [Figure 6] FIG. 6 is a pressure-time history graph associated with variable chamber pressure due to intermittent stagnation gas flow inside the chamber, according to an exemplary embodiment.

[0017] [Figure 7] FIG. 7 is a graph illustrating different etch rates as an indication of the cleaning rate of residual deposits at the periphery of a test wafer for an intermittent stagnation flow of clean gas inside a reaction chamber, according to an example embodiment.

[0018] [Figure 8] FIG. 8 is a flowchart of a method for removing residual deposits according to an example embodiment.

[0019] [Figure 9] FIG. 9 is a flowchart of another method for removing residual deposits, according to an example embodiment.

[0020] [Figure 10]FIG. 10 is a block diagram illustrating an example of a machine that may implement one or more exemplary method embodiments or control one or more exemplary embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0021] The following description includes systems, methods, techniques, instruction sequences, and computer program products (e.g., stored on machine-readable media) that embody exemplary embodiments of the present disclosure. In the following description, for purposes of explanation, numerous specific details are generally set forth to provide a thorough understanding of exemplary embodiments relating to an intermittent stagnation flow of cleaning gas within a reaction chamber to remove residual deposits from surfaces of the reaction chamber. However, it will be apparent to one skilled in the art that the present embodiments may be practiced without these specific details.

[0022] In this application, the terms "semiconductor wafer," "wafer," "substrate," "semiconductor substrate," and "wafer substrate" are used interchangeably. Also, the terms "chamber," "reaction chamber," "deposition chamber," "reactor," "chemical separation chamber," "processing chamber," and "substrate processing chamber" are used interchangeably.

[0023] One type of substrate processing apparatus includes a reaction chamber including upper and lower electrodes that apply radio frequency (RF) power between the electrodes to excite a process gas into a plasma for processing a semiconductor substrate in the reaction chamber. Another type of substrate processing apparatus includes an ALD tool, which is a specialized type of CVD processing system in which an ALD reaction occurs between two or more chemical species introduced as process gases into a reaction chamber (e.g., an ALD reaction chamber). CVD processing systems can be configured to operate without a plasma. However, plasma-enhanced CVD (or PE-CVD) processing systems are configured to operate with a plasma. Similarly, ALD processing systems can be configured to operate with or without a plasma. Process gases (e.g., precursor gases) are used (e.g., during multiple ALD cycles) to form thin film deposits of materials on substrates, such as silicon wafers used in the semiconductor industry. The precursor gases are sequentially introduced into the ALD processing chamber from a gas source such that the gases react with the surface of the substrate and, upon bonding, form a deposition layer. For example, the substrate is typically exposed to a first chemical (or combination of chemicals) to form an adsorbed layer. Excess first chemical or chemicals are removed by pumping or purging. A second chemical (or combination of chemicals) is introduced to react with the adsorbed layer to form the deposited material layer. The two chemicals or combination of chemicals are specifically selected to react with each other to form the deposited material layer. A more detailed description of the reaction chamber and substrate processing equipment is provided in connection with FIG. 1.

[0024] During processing of a substrate (e.g., as processed in the reaction chamber shown in FIG. 1, FIG. 2A, FIG. 2B, or FIG. 2C), residual deposits form on the surfaces of the reaction chamber. Fluid simulations suggest that atomic oxygen (as well as other activated radical species used as residual deposit cleaning agents) is more likely to be drawn into the chamber pump port than to diffuse to the outer regions of the chamber (e.g., slit valve ports, filler plates, or other structures located along the inner periphery of the chamber). Techniques disclosed herein, including periodically closing the chamber pump port, provide intermittent stagnation flows of cleaning gas within the chamber that redirect the cleaning gas flow streamlines, allowing the cleaning gas to diffuse to the outer regions of the chamber and more uniformly remove residual deposits.

[0025] FIG. 1 is a functional block diagram of an example substrate processing system 100 in which embodiments of the present disclosure may be used. Referring now to FIG. 1, the exemplary substrate processing system 100 is configured to perform deposition as shown. A PECVD substrate processing system is shown as system 100. However, a PEALD substrate processing system or other substrate processing systems (e.g., processing systems that do not use plasma for deposition or etching) may also be used in connection with the cleaning techniques described herein. The substrate processing system 100 includes a reaction chamber 102 that houses the other components of the substrate processing system 100 and contains a plasma. The reaction chamber 102 includes a gas distribution device 104 and a substrate support 106, such as an electrostatic chuck (ESC). During operation, a substrate 108 is positioned on the substrate support 106. In some embodiments, the substrate support may include one or more pedestals (e.g., as shown in FIGS. 2A-2C).

[0026] In some embodiments, the gas distribution system 104 may include a powered showerhead 109 that functions as an electrode to distribute process gases across the substrate 108 and apply an RF field that induces ion bombardment. The showerhead 109 may include a stem portion with one end connected to the top surface of the reaction chamber 102. The base portion is generally cylindrical and extends radially outward from the opposite end of the stem portion at a location spaced apart from the top surface of the reaction chamber 102. The substrate-facing surface or faceplate of the base portion of the showerhead 109 includes a plurality of distribution holes through which the process gas (or gas) flows. The gas distribution system 104 may be made of a metallic material and may act as an upper electrode. Alternatively, the gas distribution system 104 may be made of a non-metallic material and may include a recessed electrode. In other embodiments, the upper electrode may include a conductive plate, and the process gas may be introduced in another manner.

[0027] The substrate support 106 includes a conductive base plate 110 that acts as a bottom electrode. The base plate 110 supports a heating plate 112, which may correspond to a ceramic multi-zone heating plate. A thermal resistance layer 114 may be disposed between the heating plate 112 and the base plate 110. The base plate 110 may include one or more coolant channels 116 for flowing coolant through the base plate 110.

[0028] A radio frequency (RF) generation system 120 generates and outputs an RF voltage to one of the upper electrode (e.g., the gas distribution apparatus 104) and the lower electrode (e.g., the base plate 110 of the substrate support 106). The other of the upper and lower electrodes may be direct current (DC) grounded at 143, alternating current (AC) grounded, or may be floating. In some embodiments, the RF generation system 120 may provide dual frequency power, including a high frequency (HF) generator 121 and a low frequency (LF) generator 122 that generate HF and LF power (at predetermined frequencies and power levels, respectively) that is supplied to the upper or lower electrode (or showerhead) by a matching and distribution network 124.

[0029] Chemical delivery system 130 (also referred to as chemical delivery modules) includes process gas sources 132-1, 132-2, ..., and 132-N (collectively, process gas sources 132) (such as one or more precursor canisters), where N is an integer greater than zero. The process gas sources are fluidly coupled (e.g., via multiple gas lines) to corresponding valves 134-1, 134-2, ..., and 134-N.

[0030] The process gas source 132 supplies one or more process gas mixtures, dopants, carrier gases, liquid precursors, precursor gases, cleaning gases, and / or purge gases. In some embodiments, the chemical delivery system 130 supplies precursor gases, such as a mixture of tetraethyl orthosilicate (TEOS) gas, a gas containing an oxygen species during deposition and argon (Ar) gas, and a dopant containing triethyl phosphate (TEPO) and / or triethyl borate (TEB). In some embodiments, dopant diffusion occurs from the gas phase. For example, a carrier gas (e.g., nitrogen, argon, or other) is enriched with the desired dopant (also in gaseous form, e.g., triethyl phosphate (TEPO) and / or triethyl borate (TEB)) and delivered to the silicon wafer, where the concentration can be balanced. In a subsequent step, the wafer may be placed in a quartz tube that is heated to a specific temperature.

[0031] Returning to FIG. 1 , the process gas source 132 is connected to a mixing manifold 140 in fluid communication with the reaction chamber 102 via valves 134-1, 134-2, ..., and 134-N (collectively, valves 134) and mass flow controllers (MFCs) 136-1, 136-2, ..., and 136-N (collectively, MFCs 136). The process gases are delivered to the mixing manifold 140 and mixed therein. The output of the mixing manifold 140 is delivered to the reaction chamber 102 (e.g., via a downtube). In some embodiments, the mixing manifold is heated to a predetermined temperature to deliver precursor gases to the reaction chamber at a particular temperature (or temperature range). In some implementations, the output of the mixing manifold 140 is delivered to the showerhead 109. A secondary purge gas 170 may be delivered to the processing chamber 102, such as behind the showerhead 109, via a valve 172 and an MFC 174. The mixing manifold 140 is shown separately, although the mixing manifold 140 may be part of the chemical delivery system 130.

[0032] The temperature controller 142 may be connected to a plurality of thermal control elements (TCEs) 144 disposed on the heater plate 112. For example, the TCEs 144 may include, but are not limited to, respective macro-TCEs corresponding to each zone of the multi-zone heater plate and / or an array of micro-TCEs disposed across multiple zones of the multi-zone heater plate. The temperature controller 142 may be used to control the plurality of TCEs 144 to control the temperature of the substrate support 106 and the substrate 108. FIG. 1 illustrates a TCE in a substrate support structure. However, the present disclosure is not limited in this respect, and TCEs may be configured in other regions of the chamber (e.g., chamber walls). Such TCEs configured on the chamber walls may control the temperature of the chamber walls, which may inhibit deposition and assist in the chamber cleaning techniques described herein (e.g., by increasing the reactivity of cleaning gases reaching the wall surfaces).

[0033] The temperature controller 142 may be in communication with a coolant assembly 146 to control the flow of coolant through the channel 116. For example, the coolant assembly 146 may include a coolant pump and a reservoir. The temperature controller 142 operates the coolant assembly 146 to selectively flow coolant into the channel 116 to cool the substrate support 106. Valves 150 (e.g., gate valves) and pumps 152 (e.g., exhaust pumps) may be used to control pressure and evacuate reactants from the processing chamber 102. In an exemplary embodiment (e.g., as shown in FIG. 2C ), the reaction chamber may include multiple gate valves (or other types of valves) to evacuate reactants from the chamber.

[0034] The system controller 160 may be used to control components of the substrate processing system 100, including dynamically monitoring and adjusting the surface temperature of the heating elements of the gas lines in the chemical delivery system 130, and to perform control functions related to the removal of residual deposits in the reaction chamber (e.g., controlling the duration of opening and closing periods of one or more gate valves of the chamber, the pressure in the chamber, etc.), as described herein. The system controller 160 may also perform pressure control functions, such as monitoring and adjusting the pressure in the reaction chamber 102. The temperature controller 142 is shown as a separate controller. However, the temperature controller 142 may be implemented within the system controller 160.

[0035] In an exemplary embodiment, the reaction chamber 102 may include residue sensors 176 and 178, which may be mounted on one or more surfaces of the chamber. In an exemplary embodiment, the residue sensors may be configured to change surface color when residue is deposited on the residue sensors. Alternatively, the sensors may be designed to measure the thickness of residue deposited on the sensors. In this regard, the residue sensors 176 and 178 may include optical sensors and provide information regarding the sensed surface color or any other physical characteristic indicative of the amount of residue present in the chamber. In some embodiments, the residue sensors 176 and 178 may include substrate tags (e.g., portions of a substrate) with optical sensors that can detect residue deposits on the tags and report the detected residue deposits (e.g., the thickness of residue deposits on the substrate tags) to a controller module (e.g., system controller 160) configured to control cleaning uniformity within the reaction chamber. For example, the system controller 160 can detect the uniformity of cleaning within the reaction chamber 102 based on the residual deposit information received from the residual deposit sensors 176 and 178. The system controller 160 can achieve the uniformity of cleaning associated with removing residual deposits by controlling at least one flow characteristic of the cleaning gas introduced into the reaction chamber to redirect the gas flow streamlines along the surfaces of the reaction chamber. In some embodiments, the system controller 160 can control the duration of the open periods and the duration of the closed periods of the valve 150 (and / or one or more additional gate valves) of the reaction chamber 102 to adjust the movement or position of the gas flow streamlines within the reaction chamber, adjust the effective pumping speed of the chamber, and increase the uniformity of cleaning associated with removing residual deposits on the chamber surfaces.In another exemplary embodiment, system controller 160 can dynamically adjust the duration of open and closed periods of valve 150 based on the uniformity of cleaning within the chamber (e.g., based on residue deposit information from residue sensors 176 and 178) or to maintain the pressure within the chamber within a certain range (e.g., opening valve 150 when the pressure reaches an upper threshold and closing valve 150 when the pressure reaches a lower threshold). Exemplary embodiments of reaction chambers associated with removing residue deposits are described in connection with Figures 2A, 2B, and 2C.

[0036] 2A, 2B, and 2C are functional block diagrams of a reaction chamber of a substrate processing system in which gas flow streamlines may be manipulated during a cleaning cycle to remove residual deposits, according to an exemplary embodiment. Referring to FIG. 2A, diagram 200A shows a reaction chamber 206 that may be part of a substrate processing system similar to substrate processing system 100 of FIG. 1. In an exemplary embodiment, reaction chamber 206 may include multiple pedestals (e.g., pedestals 212 and 214) arranged around a spindle hub 216, each usable to support a substrate within reaction chamber 206. FIG. 2A shows two pedestals. However, the disclosure is not limited in this respect, and reaction chamber 206 may include a variable number of pedestals (e.g., four pedestals as shown in FIG. 3). Reaction chamber 206 further includes showerheads 218 and 220 arranged along a horizontal surface 234 of the chamber.

[0037] Reaction chamber 206 further includes filler plates 222 and 224 and residue sensors 236 and 238, all of which are disposed along vertical surfaces 230 and 232 of reaction chamber 206. As shown in FIG. 2A, vertical surfaces 230 and 232 are generally perpendicular to horizontal surface 234. Residue sensors 236 and 238 are functionally similar to residue sensors 176 and 178 described in connection with FIG. 1. Filler plates 222 and 224 can be positioned adjacent to pedestals 212 and 214 and are used to improve gas flow uniformity within reaction chamber 206.

[0038] Reaction chamber 206 further includes a chamber pump port 228 fluidly coupled to gate valve 208 and pump 210 via foreline 229. Gate valve 208 and pump 210 are functionally similar to valve 150 and pump 152 of FIG.

[0039] The reaction chamber 206 is configured to receive a cleaning gas generated by a remote plasma source (RPS) 204 using the process gas 202. For example, the RPS 204 can use the process gas 202 to generate a cleaning gas containing activated radical species (e.g., atomic oxygen or fluorine). The cleaning gas is supplied into the reaction chamber 206 through a downtube 205, which terminates at an injection point 226 located on a horizontal surface 234 of the reaction chamber 206. In another embodiment, the cleaning gas is supplied into the reaction chamber 206 through showerheads 218 and 220.

[0040] As shown in FIG. 2A , during operation, gate valve 208 is open and pump 210 continuously pumps chamber 206. Cleaning gas is supplied into chamber 206 from RPS 204 via downtube 205. In this regard, multiple gas flow streamlines 232 of cleaning gas are generated, each originating at injection point 226 and terminating at chamber pump port 228, which is fluidly coupled to gate valve 208 and pump 210 via foreline 229. Because gate valve 208 is continuously open, multiple gas flow streamlines 232 tend to form along the path of least obstruction between injection point 226 and chamber pump port 228. For example, as shown in FIG. 2A , the majority of multiple gas flow streamlines 232 pass through gaps disposed between spindle hub 216 and pedestals 212 and 214, and between pedestal 212 and filler plate 222. As a result, residual deposits within the reaction chamber 206 are not uniformly cleaned, especially in areas where the gas flow streamlines 232 do not pass and the cleaning gas does not diffuse near such areas (e.g., areas along the vertical surfaces 230 and 232).

[0041] 2B shows a diagram 200B of the reaction chamber 206 during an intermittent stagnation flow of cleaning gas when the gate valve 208 is temporarily closed but cleaning gas is still introduced into the chamber 206 via the injection point 226. In an exemplary embodiment, as shown in FIG. 2B , uniformity of cleaning associated with removing residual deposits can be achieved by modifying at least one flow characteristic of the cleaning gas introduced into the reaction chamber 206 to redirect at least some of the gas flow streamlines 240 toward multiple surfaces of the reaction chamber (e.g., redirecting at least some of the gas flow streamlines 240 toward the inner periphery of the reaction chamber 206, where the inner periphery encompasses the periphery of the vertical walls 230 and 232 of the reaction chamber 206). The inner periphery is shown in more detail in connection with FIGS. 3 and 4.

[0042] In an exemplary embodiment, the at least one flow characteristic is the effective pumping speed of the reaction chamber 206. More specifically, the system controller 160 can be configured to control the duration of an open period and the duration of a closed period of the gate valve 208, where the gate valve 208 opens during the open period and closes during the closed period to allow the pump 210 to evacuate the cleaning gas from the reaction chamber. From another perspective, the control parameter in this case can be considered not only as the ratio of off time to on time, but also as the frequency of the off-on cycle. In an exemplary embodiment, the duration of the open period and the duration of the closed period of the gate valve are each between about 1 second and about 2 seconds.

[0043] 2B, when gate valve 208 is closed, gas flow streamlines 240 are redirected toward more of the interior surfaces of the reaction chamber, including vertical surfaces 230 and 232, than gas flow streamlines 232 in FIG. 2A when gate valve 208 is open. Furthermore, cleaning gas 242 diffuses to most of the structures and surfaces within reaction chamber 206 as the cleaning gas continues to enter the reaction chamber and the pressure within the chamber increases, resulting in better cleaning uniformity and greater removal of residual deposits.

[0044] In an exemplary embodiment, system controller 160 can receive sensor information from residue sensors 236 and 238 to detect the uniformity of cleaning within reaction chamber 206. In an exemplary embodiment, residue sensors 236 and 238 can be mounted on vertical surfaces 230 and 232 proximate one or more filler plates (e.g., filler plates 222 and 224) or one or more slit valve ports (e.g., as shown in FIGS. 3 and 4 ) of the reaction chamber. Residue sensors 236 and 238 can monitor residue deposits (e.g., thickness or presence of residue deposits) near the areas where they are mounted and can provide the sensor information to system controller 160. System controller 160 controls the duration of open periods and the duration of closed periods of pump 210 based on the sensor information indicative of the uniformity of cleaning and residue deposits remaining. In an exemplary embodiment, the duration of the open period and the duration of the closed period may be dynamically configured (eg, based on sensor information from residue sensors 236 and 238).

[0045] In an exemplary embodiment, the at least one flow characteristic is the pressure within the reaction chamber 206 during the delivery of the cleaning gas 242. More specifically, the system controller 160 can configure and control the duration of an opening period and the duration of a closing period of the reaction chamber gate valve (e.g., based on sensor information from the residue sensors 236 and 238) to adjust the pressure within the reaction chamber 206 so that the pressure within the reaction chamber 206 remains within lower and upper thresholds. For example, the system controller 160 can initiate a closing period of the gate valve 208 (e.g., close the gate valve 208) when the pressure within the reaction chamber reaches a lower threshold. Similarly, the system controller 160 can initiate an opening period of the gate valve 208 (e.g., open the gate valve 208) when the pressure within the reaction chamber reaches an upper threshold. In an exemplary embodiment, the lower and upper thresholds can be dynamically configured (e.g., based on sensor information from the residue sensors 236 and 238). In an exemplary embodiment, the lower threshold is about 1.2 Torr and the upper threshold is about 6 Torr.

[0046] In an exemplary embodiment, when the gate valve is closed, the cleaning gas is diffused to the chamber walls, while when the gate valve is open, the cleaning gas is pumped out before it has a chance to diffuse to the sides of the chamber. In this regard, the oscillation between opening and closing of the gate valve (or valves) and the duration of each opening and closing period can be based on the degree of diffusion of the cleaning gas near the chamber walls (which can be monitored or detected via a sensor).

[0047] FIG. 2C shows a diagram 200C of a reaction chamber 206 including multiple gate valves. For example, FIG. 2C shows a reaction chamber 206 having gate valves 208, 244, 246, and 248. Gate valve 244 can be located at the opposite end of gate valve 208, in the same horizontal plane as reaction chamber 206. Gate valve 246 can be located along vertical surface 230, and gate valve 248 can be located along vertical surface 232. FIG. 2C shows reaction chamber 206 as having four separate gate valves. However, the disclosure is not limited in this respect, and reaction chamber 206 can include a varying number of gate valves (e.g., one or more). In an exemplary embodiment, all of gate valves 208, 244, 246, and 248 can be fluidly coupled to pump 210, or each gate valve can be fluidly coupled to its own pump. Here, all of the pumps are managed by system controller 160. These valves can be opened and closed simultaneously or in a sequential sequence to allow for redistribution of flow lines that may be necessary to improve chamber cleaning.

[0048] In an exemplary embodiment, the system controller 160 can independently configure the duration of each gate valve's open and closed periods based on the uniformity of cleaning and the presence of residual deposits within the reaction chamber 206. For example, one or more residue sensors can be disposed on a surface proximate to each of the gate valves, and the system controller 160 can independently configure the duration of each gate valve based on sensing information from the residue sensors. Alternatively, the durations can be preconfigured (e.g., based on the substrate etch rate as an indicator of the uniformity of cleaning within the reaction chamber 206, as described in connection with FIGS. 5, 6, and 7). In an exemplary embodiment, the system controller 160 can oscillate at least two of the gate valves shown in FIG. 2C during opening and adjust the flow pattern so that the chamber has different flow patterns when pumping from the side and when pumping from the bottom.

[0049] 3 is a schematic diagram of a top view of a reaction chamber 300 with multiple pedestals, as well as slit valve ports and filler plates, that can be cleaned of residual deposits using the techniques of the present disclosure, according to an exemplary embodiment. Referring to FIG. 3, the reaction chamber includes pedestals 302, 304, 306, and 308 configured to support a substrate during processing within the chamber. FIG. 3 further illustrates filler plates 312, 314, 316, and 318 positioned along the vertical surface of reaction chamber 300. Additionally, FIG. 3 illustrates slit valve ports 320 and 322, also positioned along the vertical surface of reaction chamber 300, that are used to allow substrate movement into and out of reaction chamber 300.

[0050] In an exemplary embodiment, residue sensors can be positioned on the vertical surfaces of reaction chamber 300, proximate filler plates 312-318 and slit valve ports 320 and 322. For example, residue sensors (e.g., residue sensors 236 and 238) can be positioned along inner periphery 324 of reaction chamber 300. A perspective view of inner periphery 324 is shown in FIG.

[0051] FIG. 4 is a perspective view 400 illustrating a slit valve port and inner periphery along a vertical plane of a reaction chamber 300 that can be cleaned of residual deposits using techniques of the present disclosure, according to an exemplary embodiment. As shown in FIG. 4, slit valve port 320 (as well as slit valve port 322, not visible in FIG. 4) is disposed on a vertical plane 402 of reaction chamber 300. Vertical plane 402 (which may be one of vertical planes 230 or 232 in FIG. 2) is perpendicular to a horizontal plane 404 of the reaction chamber that includes spindle hub 310 and pedestals 306 and 308. In an exemplary embodiment, techniques disclosed herein can be used to modify at least one flow characteristic of the cleaning gas and redirect at least some of the streamlines of multiple gas flows within the reaction chamber to circulate proximate to inner periphery 324, which is disposed along the vertical plane (e.g., vertical plane 402) of the reaction chamber.

[0052] 5 is a graph 500 illustrating the change in substrate average etch rate (as an indicator of residual deposit removal rate) with chamber pressure, according to an example embodiment. Referring to FIG. 5, graph 500 shows that the average etch rate of substrates in a reaction chamber decreases as chamber pressure increases. Because the substrate average etch rate can be used as an indicator of the residual deposit removal rate in a reaction chamber, the inverse dependency between the substrate average etch rate and chamber pressure can be used to configure the duration of the gate valve opening and closing periods, as well as the lower and upper thresholds for the reaction chamber pressure.

[0053] FIG. 6 is a pressure-time history graph 600 associated with variable chamber pressure due to intermittent stagnation gas flow within the chamber, according to an exemplary embodiment. Referring to FIG. 6, the pressure-time history graph 600 is associated with an exemplary operation of a gate valve duty cycle that induces intermittent stagnation flow of cleaning gas within the reaction chamber to trigger uniform cleaning of residual deposits. More specifically, in an exemplary embodiment, the gate valve idle time (e.g., the time between valve opening and closing) can be held constant at about 2 seconds, and the initial reaction chamber pressure can be set to about 1.2 Torr (e.g., the lower threshold). In an exemplary embodiment, the upper threshold can be set to about 5.5 or 6 Torr. However, other values for the lower and upper thresholds can also be used. In another exemplary embodiment, the system controller 160 can configure only the duration of the gate valve opening and closing periods (without setting specific values for the lower and upper thresholds).

[0054] 7 is a graph 700 illustrating different etch rates as an indicator of residual deposit cleanup rates using different configurations for intermittent stagnation flow of clean gas inside a reaction chamber, according to an exemplary embodiment. Referring to FIG. 7 , subgraph 702 is a baseline graph showing the dependence of substrate etch rate along the diameter of a substrate when the gate valve is always open and there is no gate valve duty cycle operation (e.g., cycling the gate valve between an open and closed state). Subgraph 704 is a graph showing the dependence of substrate etch rate along the diameter of a substrate for a cleaning cycle based on nine gate valve pulsations (or duty cycle operations) (i.e., the gate valve is opened and closed nine times), where the duration of the closed state is about 1 second and the upper threshold reaction chamber pressure is about 6 Torr. Subgraph 706 is a graph showing the dependence of substrate etch rate along the diameter of a substrate for a cleaning cycle based on six gate valve pulsations (or duty cycle operations) (i.e., the gate valve is opened and closed six times), where the duration of the closed state is about 3 seconds and the upper threshold reaction chamber pressure is about 7 Torr. In an exemplary embodiment, the system controller 160 can set the duration of the gate valve opening and closing periods or the upper threshold for the chamber pressure based on the process parameters used to obtain the subgraphs 704 or 706 .

[0055] 8 is a flowchart of a method 800 for removing residual deposits, according to an example embodiment. Method 800 includes operations 802, 804, and 806 that may be performed by control logic (or control logic causes other modules to configure or perform functions), such as system controller 160 of FIG. 1 that directs operation of substrate processing apparatus 100, including performance of operations related to removing residual deposits from a reaction chamber of the apparatus (e.g., reaction chamber 102 or any of the reaction chambers shown in FIGS. 2A-2C).

[0056] In operation 802, a cleaning gas is supplied into the reaction chamber by direct supply from a remote plasma source (RPS). For example, cleaning gas 242 is supplied into reaction chamber 206 through downtube 205 having injection point 226. The cleaning gas forms multiple gas flow streamlines (e.g., gas flow streamline 232) within the reaction chamber. Each gas flow streamline of the multiple gas flow streamlines originates at an injection point (e.g., injection point 226) that is fluidly coupled to the RPS to receive the cleaning gas and terminates at a chamber pump port (e.g., chamber pump port 228) that is coupled to a foreline (e.g., foreline 229) for exhausting the cleaning gas from the reaction chamber.

[0057] In operation 804, at least one flow characteristic of the cleaning gas is modified to redirect at least some of the plurality of gas flow streamlines to circulate proximate the inner periphery of the reaction chamber to remove residual deposits. For example, at least one flow characteristic (e.g., the effective pumping speed of the reaction chamber) is adjusted to redirect at least some of the plurality of gas flow streamlines 240 toward the inner periphery (e.g., inner periphery 324). The inner periphery may be disposed along one or more vertical surfaces of the reaction chamber (e.g., surfaces 230 and 232), the one or more vertical surfaces being perpendicular to a horizontal surface of the reaction chamber that includes the injection point (e.g., surface 234).

[0058] In an exemplary embodiment, at least one flow characteristic is the effective pumping speed of the reaction chamber. In operation 806, the duration of the opening period and the duration of the closing period of the gate valve of the reaction chamber are controlled (e.g., by the system controller 160) to adjust the movement or position of the gas flow streamline within the reaction chamber and to adjust the effective pumping speed, where the gate valve is open during the opening period and closed during the closing period. For example, the system controller 160 may configure the duration of the opening and closing periods of the gate valve 208 based on, for example, sensor information from the residue sensors 236 and 238.

[0059] 9 is a flowchart of another method 900 of removing residual deposits, according to an example embodiment. Method 900 includes operations 902, 904, and 906 that may be performed by control logic (or control logic causes other modules to configure or perform functions), such as system controller 160 of FIG. 1 that manages operation of substrate processing apparatus 100, including performance of operations related to removing residual deposits from a reaction chamber of the apparatus (e.g., reaction chamber 102 or any of the reaction chambers of FIGS. 2A-2C).

[0060] In operation 902, a cleaning gas is supplied into the reaction chamber by direct supply from a remote plasma source (RPS), and the cleaning gas forms multiple gas flow streamlines within the reaction chamber. For example, cleaning gas 242 is supplied into reaction chamber 206 through downtube 205 having injection point 226. The cleaning gas forms multiple gas flow streamlines (e.g., gas flow streamline 232) within the reaction chamber. Each gas flow streamline of the multiple gas flow streamlines originates at an injection point (e.g., injection point 226) that is fluidly coupled to the RPS to receive the cleaning gas and terminates at a chamber pump port (e.g., chamber pump port 228) that is coupled to a foreline (e.g., foreline 229) for exhausting the cleaning gas from the reaction chamber.

[0061] In operation 904, the uniformity of cleaning associated with the removal of residual deposits from the reaction chamber by the cleaning gas is detected. For example, the system controller 160 may use sensor information from the residue sensors 236 and 238 to determine the amount of residual deposits in the reaction chamber and the uniformity of cleaning.

[0062] In operation 906, the duration of the opening period and the duration of the closing period of the gate valve of the reaction chamber are controlled based on the cleaning uniformity to adjust the movement or position of the gas flow streamline within the reaction chamber and to adjust the effective pumping speed of the cleaning gas. For example, the system controller 160 controls the duration of the opening and closing periods of the gate valve 208 based on the cleaning uniformity determined using the sensor information.

[0063] FIG. 10 is a block diagram illustrating an example of a machine 1000 upon which one or more exemplary method embodiments may be implemented or upon which one or more exemplary embodiments may be controlled. In alternative embodiments, machine 1000 may operate as a standalone device or may be connected (e.g., networked) to other machines. In a networked deployment, machine 1000 may operate in the capacity of a server machine, a client machine, or both, in a server-client network environment. In one example, machine 1000 may operate as a peer machine in a peer-to-peer (P2P) (or other distributed) network environment. Furthermore, while only a single machine 1000 is shown, the term “machine” should be interpreted to include any collection of machines individually or collectively executing a set (or sets) of instructions to perform any one or more of the methodologies described herein, such as via cloud computing, software as a service (SaaS), or other computer cluster configuration.

[0064] The embodiments described herein may include or operate through logic, several components, or mechanisms. Circuitry is a collection of circuits implemented with tangible objects, including hardware (e.g., simple circuits, gates, logic). Membership in a circuitry may be adaptive over time and over variations in the underlying hardware. Circuitry includes elements that, alone or in combination, can perform specified operations when operated. In one example, the hardware in a circuitry may be invariably designed (e.g., hardwired) to perform specific operations. In one example, the hardware in a circuitry may include variably connected physical components (e.g., execution units, transistors, simple circuits) that include computer-readable media that are physically altered (e.g., magnetically, electrically, by a movable arrangement of immutable mass particles, etc.) to encode instructions for specific operations. When connecting the physical components, the electrical properties of the underlying hardware components are altered (e.g., from insulator to conductor, or vice versa). Instructions cause the embedded hardware (e.g., execution units or load mechanisms) to create elements of the circuitry in the hardware through the variable connections to perform some of the specific operations when operated. Thus, the computer-readable medium is communicatively connected to other components of the circuit configurations when the device is operating. In some aspects, any of the physical components may be used in multiple elements of multiple circuit configurations. For example, during operation, an execution unit may be used in a first circuit of a first circuit configuration at one time and reused at a different time by a second circuit in the first circuit configuration, or a third circuit in the second circuit configuration.

[0065] The machine (e.g., computer system) 1000 may include a hardware processor 1002 (e.g., a central processing unit (CPU), a hardware processor core, a graphics processing unit (GPU), or any combination thereof), a main memory 1004, and a static memory 1006, some or all of which may communicate with each other via an interlink (e.g., a bus) 1008. The machine 1000 may further include a display device 1010, an alphanumeric input device 1012 (e.g., a keyboard), and a user interface (UI) navigation device 1014 (e.g., a mouse). In one example, the display device 1010, the alphanumeric input device 1012, and the UI navigation device 1014 may be touchscreen displays. The machine 1000 may further include a mass storage device (e.g., a drive device) 1016, a signal generator 1018 (e.g., a speaker), a network interface device 1020, and one or more sensors 1021. The machine 1000 may include an output controller 1028, such as a serial (e.g., Universal Serial Bus (USB)), parallel, or other wired or wireless (e.g., infrared (IR), near field communication (NFC)) connection, to communicate with or control one or more peripheral devices (e.g., printer, card reader).

[0066] In an exemplary embodiment, the hardware processor 1002 may execute the functionality of the system controller 160 or any control logic described herein above to configure and control the functionality described herein, such as configuring an intermittent stagnation flow of cleaning gas associated with removing residual deposits from the reaction chamber (e.g., as described in connection with at least FIGS. 1-9).

[0067] The mass storage device 1016 may include a machine-readable medium 1022 on which is stored one or more data structures or sets of instructions 1024 (e.g., software) embodied in or utilized by any one or more of the techniques or functions described herein. The instructions 1024 may also reside, completely or at least partially, within the main memory 1004, the static memory 1006, or the hardware processor 1002 during execution of the instructions 1024 by the machine 1000. In one example, one or any combination of the hardware processor 1002, the main memory 1004, the static memory 1006, or the mass storage device 1016 may constitute the machine-readable medium.

[0068] Although the machine-readable medium 1022 is shown as a single medium, the term "machine-readable medium" may include a single medium or multiple media (e.g., a centralized or distributed database, and / or associated caches and servers) configured to store one or more instructions 1024.

[0069] The term "machine-readable medium" may include any medium capable of storing, encoding, or transmitting instructions 1024 for execution by machine 1000, causing machine 1000 to perform any one or more of the techniques of this disclosure, or capable of storing, encoding, or transmitting data structures used in or associated with such instructions 1024. Non-limiting examples of machine-readable media may include solid-state memory, optical media, and magnetic media. In one example, a high-capacity machine-readable medium includes a machine-readable medium 1022 having a plurality of particles with an unchanging (e.g., stationary) mass. Thus, a high-capacity machine-readable medium is not a transitory, propagating signal. Specific examples of high-capacity machine-readable media may include semiconductor memory devices (e.g., electrically programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM)) and flash memory devices, non-volatile memory, magnetic disks such as internal hard disks and removable disks, magneto-optical disks, and CD-ROM and DVD-ROM disks.

[0070] The instructions 1024 may also be transmitted or received over a communications network 1026 using a transmission medium via the network interface device 1020 .

[0071] Implementation of the prior art may be achieved by any number of specifications, configurations, or exemplary deployments of hardware and software. It should be understood that functional units or capabilities described herein may be referred to or labeled as components or modules to more particularly emphasize their implementation independence. Such components may be embodied in any number of software or hardware forms. For example, a component or module may be implemented as a hardware circuit including custom very large scale integrated (VLSI) circuits or gate arrays, off-the-shelf semiconductors such as logic chips, transistors, or other discrete components. A component or module may also be implemented in programmable hardware devices such as field programmable gate arrays, programmable array logic, programmable logic devices, etc. A component or module may also be implemented in software for execution by various types of processors. An identified component or module of executable code may comprise one or more physical or logical blocks of computer instructions, which may be organized, for example, as an object, procedure, or function. However, the executable files of an identified component or module need not be physically located together and may include heterogeneous instructions stored in different locations that, when logically combined, constitute the component or module and may achieve the purpose stated for the component or module.

[0072] Indeed, a component or module of executable code may be a single instruction, or many instructions, and may even be distributed across several different code segments, among different programs, and across several memory devices or processing systems. In particular, some aspects of the described processes (such as code rewriting and code analysis) may occur on a processing system (e.g., in a computer in a data center) different from the processing system on which the code is deployed (e.g., in a computer embedded in a sensor or robot). Similarly, operational data may be identified and illustrated herein within components or modules and may be embodied in any suitable form and organized within any suitable type of data structure. Operational data may be collected as a single data set or distributed across different locations, including on different storage devices, or may exist, at least in part, simply as electronic signals on a system or network. Components or modules may be passive or active and comprise agents operable to perform desired functions.

[0073] Additional Notes and Examples

[0074] Example 1 is a method for removing residual deposits from a reaction chamber. The method includes supplying a cleaning gas into the reaction chamber by direct supply from a remote plasma source (RPS). The cleaning gas forms a plurality of gas flow streamlines within the reaction chamber, each of the plurality of gas flow streamlines originating at an injection point fluidly coupled to the RPS to receive the cleaning gas and terminating at a chamber pump port coupled to a foreline for exhausting the cleaning gas from the reaction chamber. At least one flow characteristic of the cleaning gas is modified to redirect at least some of the plurality of gas flow streamlines to circulate proximate an inner periphery of the reaction chamber to remove the residual deposits. The inner periphery is disposed along one or more vertical planes of the reaction chamber, the one or more vertical planes being perpendicular to a horizontal plane of the reaction chamber including the injection point.

[0075] In Example 2, the subject matter described in Example 1 includes subject matter wherein the at least one flow characteristic is an effective pumping speed of the reaction chamber, and the method further includes adjusting the effective pumping speed by controlling a duration of an opening period and a duration of a closing period of a gate valve of the reaction chamber, the gate valve being fluidly coupled to the foreline and a pump configured to perform the exhaust of the cleaning gas, and the gate valve being open during the opening period and closed during the closing period.

[0076] In Example 3, the duration of the opening period of the gate valve of the subject matter described in Example 2 is between about 1 second and about 2 seconds.

[0077] In Example 4, the subject matter described in Examples 2-3 includes detecting a uniformity of cleaning associated with removing the residual deposits from the reaction chamber, and controlling the duration of the open period and the duration of the closed period based on the detected uniformity of cleaning.

[0078] In Example 5, the subject matter described in Example 4 includes subject matter wherein detecting the uniformity of the cleaning includes monitoring the residual deposits adjacent to one or more filler plates of the reaction chamber, the one or more filler plates being at least partially positioned on the one or more vertical surfaces.

[0079] In Example 6, the subject matter described in Examples 4-5 includes subject matter wherein detecting the uniformity of the cleaning includes monitoring the residual deposits proximate one or more slit valve ports of the reaction chamber, the slit valve ports being at least partially positioned on the one or more vertical surfaces.

[0080] In Example 7, the subject matter described in Examples 4 to 6 includes subject matter in which detecting the uniformity of the cleaning includes detecting a thickness of the residual deposit using at least one residue sensor, the at least one residue sensor being mounted on the one or more vertical surfaces of the reaction chamber, and controlling the duration of the open period and the duration of the closed period based on the detected thickness of the residual deposit.

[0081] In Example 8, the subject matter described in Examples 1-7 includes subject matter, wherein the at least one flow characteristic is a pressure in the reaction chamber during the supply of the cleaning gas, and the method further includes controlling a duration of an opening period and a duration of a closing period of a gate valve of the reaction chamber to adjust the pressure in the reaction chamber, wherein the gate valve is fluidly coupled to the foreline and a pump configured to perform the exhaust of the cleaning gas, and wherein the gate valve opens during the opening period and closes during the closing period.

[0082] In Example 9, the subject matter described in Example 8 includes initiating the closing period of the gate valve when the pressure in the reaction chamber reaches a lower threshold, and initiating the opening period of the gate valve when the pressure in the reaction chamber reaches an upper threshold.

[0083] In Example 10, the subject matter described in Example 9 has a lower threshold of about 1.2 Torr and an upper threshold of about 6 Torr.

[0084] Example 11 is a semiconductor substrate processing apparatus including: a remote plasma source (RPS) configured to generate a cleaning gas; a reaction chamber in which a semiconductor substrate is processed and a residual deposit is formed, the reaction chamber being fluidly coupled to the remote plasma source for directly supplying the cleaning gas into the reaction chamber via a downtube; a pump fluidly coupled to the reaction chamber via a foreline and configured to control exhaust of the cleaning gas from the reaction chamber, the foreline terminating in a chamber pump port of the reaction chamber; a gate valve fluidly coupled to the reaction chamber and the pump via the foreline; and a controller module coupled to the RPS, the reaction chamber, the gate valve, and the pump. and a controller module configured to cause the RPS to supply the cleaning gas into the reaction chamber through the downtube, the cleaning gas forming a plurality of gas flow streamlines within the reaction chamber, each gas flow streamline of the plurality of gas flow streamlines originating at an injection point on the downtube and terminating at the chamber pump port, modify at least one flow characteristic of the cleaning gas, and redirect at least some of the plurality of gas flow streamlines to circulate proximate an inner periphery of the reaction chamber to remove the residual deposits, the inner periphery being disposed along one or more vertical planes of the reaction chamber, the one or more vertical planes being perpendicular to a horizontal plane of the reaction chamber including the injection point.

[0085] In Example 12, the subject matter described in Example 11 includes subject matter wherein the at least one flow characteristic is an effective pumping speed of the reaction chamber, and the controller module is further configured to control a duration of an opening period and a duration of a closing period of the gate valve of the reaction chamber to adjust the effective pumping speed of the reaction chamber, the gate valve being open during the opening period and closed during the closing period.

[0086] In Example 13, the duration of the opening period of the gate valve of the subject matter of Example 12 is between about 1 second and about 2 seconds.

[0087] In Example 14, the subject matter described in Examples 12-13 includes subject matter further configured to: detect a uniformity of cleaning associated with removing the residual deposits from the reaction chamber; and control the duration of the open period and the duration of the closed period based on the detected uniformity of cleaning.

[0088] In Example 15, the subject matter described in Example 14 includes subject matter further configured such that, to detect the uniformity of the cleaning, the controller module monitors the residual deposits proximate one or more filler plates of the reaction chamber, and the one or more filler plates are at least partially positioned on the one or more vertical surfaces.

[0089] In Example 16, the subject matter described in Examples 14-15 includes subject matter further configured such that, to detect the uniformity of the cleaning, the controller module monitors the residual deposits proximate one or more slit valve ports of the reaction chamber, and the slit valve ports are at least partially positioned on the one or more vertical surfaces.

[0090] In Example 17, the subject matter described in Examples 11-16 includes subject matter wherein the at least one flow characteristic is a pressure in the reaction chamber during the supply of the cleaning gas, and the controller module is further configured to adjust the pressure in the reaction chamber by controlling a duration of an opening period and a duration of a closing period of the gate valve of the reaction chamber, the gate valve being open during the opening period and closed during the closing period.

[0091] In Example 18, the subject matter described in Example 17 includes subject matter wherein the controller module is further configured to initiate the closing period of the gate valve when the pressure in the reaction chamber reaches a lower threshold and to initiate the opening period of the gate valve when the pressure in the reaction chamber reaches an upper threshold, the lower threshold being approximately 1.2 Torr and the upper threshold being approximately 6 Torr.

[0092] In Example 19, the subject matter of Examples 11-18 includes at least a second gate valve fluidly coupled to the reaction chamber and the pump, wherein the at least one flow characteristic is an effective pumping rate of the reaction chamber, and the controller module is further configured to control durations of opening periods and closing periods of the gate valve of the reaction chamber and durations of opening periods and closing periods of the at least second gate valve to adjust the effective pumping rate in the reaction chamber, wherein the gate valve and the at least second gate valve are open during the opening periods and closed during the closing periods.

[0093] Example 20 is a method for removing residual deposits from a reaction chamber, the method including: supplying a cleaning gas into the reaction chamber by direct supply from a remote plasma source (RPS), where the cleaning gas forms a plurality of gas flow streamlines within the reaction chamber; detecting a cleaning uniformity associated with removing the residual deposits from the reaction chamber by the cleaning gas; and adjusting an effective pumping speed of the cleaning gas based on the cleaning uniformity by controlling a duration of an opening period and a duration of a closing period of a gate valve of the reaction chamber.

[0094] In Example 21, the subject matter described in Example 20 includes subject matter wherein detecting the uniformity of the cleaning includes monitoring the residual deposits in proximity to one or more sensors mounted on at least one surface of the reaction chamber.

[0095] In Example 22, the subject matter described in Examples 20-21 includes subject matter wherein detecting the uniformity of the cleaning includes monitoring the residual deposits proximate one or more slit valve ports or one or more filler plates of the reaction chamber, and wherein the slit valve ports and the one or more filler plates are at least partially positioned on one or more vertical surfaces of the reaction chamber.

[0096] Example 23 is at least one machine-readable medium containing instructions that, when executed by a processing circuitry, cause the processing circuitry to perform operations to implement any of Examples 1 to 22.

[0097] Example 24 is an apparatus equipped with means for carrying out any one of Examples 1 to 22.

[0098] The twenty-fifth embodiment is a system for carrying out any one of the first to twenty-second embodiments.

[0099] Example 26 is a method for carrying out any of Examples 1-22.

[0100] Throughout this specification, multiple examples may implement components, operations, or structures described as a single example. Individual operations of one or more methods are illustrated and described as separate operations. However, one or more of the individual operations may be performed simultaneously, and there is no requirement that the operations be performed in the order shown. In example configurations, structures and functionality presented as separate components may be implemented as composite structures or components. Similarly, structures and functionality presented as a single component may be implemented as separate components. These and other variations, modifications, additions, and improvements are within the scope of the subject matter of this specification.

[0101] The embodiments set forth herein are described in sufficient detail to enable those skilled in the art to practice the teachings of the present disclosure. Other embodiments may be utilized and derived therefrom, and structural and logical substitutions and changes may be made without departing from the scope of the present disclosure. Therefore, the detailed description is not to be construed in a limiting sense, and the scope of various embodiments is defined only by the appended claims, along with the full scope of equivalents to which such claims are entitled.

[0102] The claims may not recite all features disclosed herein, as an embodiment may feature a subset of the features. Moreover, an embodiment may include fewer features than those disclosed in a particular example. Accordingly, the following claims are hereby incorporated into the Detailed Description, and each claim stands on its own as a separate embodiment.

[0103] As used herein, the term "or" may be interpreted in either an inclusive or exclusive sense. Furthermore, multiple examples may apply to a resource, operation, or structure described herein as a single example. Moreover, boundaries between various resources, operations, modules, engines, and data stores are somewhat arbitrary, and particular operations are illustrated in specific example configurations. Other allocations of functionality are contemplated and may be included within the scope of various embodiments of the present disclosure. In general, structures and functionality presented as separate resources in an example configuration may be implemented as a composite structure or resource. Similarly, structures and functionality presented as a single resource may be implemented as separate resources. These and other variations, modifications, additions, and improvements are included within the scope of the embodiments of the present disclosure, as indicated by the appended claims. Accordingly, the specification and drawings are to be regarded in an illustrative sense, and not a restrictive sense. The present disclosure includes the following application examples: [Application example 1] 1. A method for removing residual deposits from a reaction chamber, comprising: The method comprises: Supplying a cleaning gas into the reaction chamber by direct supply from a remote plasma source (RPS), wherein the cleaning gas forms a plurality of gas flow streamlines in the reaction chamber; each gas flow streamline of the plurality of gas flow streamlines originating at an injection point fluidly coupled to the RPS for receiving the cleaning gas and terminating at a chamber pump port coupled to a foreline for exhausting the cleaning gas from the reaction chamber; modifying at least one flow characteristic of the cleaning gas and redirecting at least some of the streamlines of the plurality of gas streams to circulate adjacent an inner periphery of the reaction chamber to remove the residual deposits, wherein the inner periphery is disposed along one or more vertical planes of the reaction chamber, the one or more vertical planes being perpendicular to a horizontal plane of the reaction chamber containing the injection point; A method comprising: [Application example 2] The method according to Application Example 1, the at least one flow characteristic is an effective pumping speed of the reaction chamber; The method comprises: controlling a duration of an opening period and a duration of a closing period of a gate valve of the reaction chamber to adjust the effective pumping speed, wherein the gate valve is fluidly coupled to the foreline and a pump configured to perform the evacuation of the cleaning gas; The gate valve is open during the opening period and closed during the closing period. [Application example 3] The method according to Application Example 2, The method, wherein the duration of the opening period of the gate valve is between about 1 second and about 2 seconds. [Application example 4] The method according to Application Example 2, detecting a cleaning uniformity associated with removing the residual deposits from the reaction chamber; controlling the duration of the open period and the duration of the closed period based on the detected uniformity of the cleaning; The method further comprises: [Application example 5] The method according to Application Example 4, Detecting the uniformity of the cleaning 10. The method of claim 1, further comprising: monitoring the residual deposits proximate one or more filler plates of the reaction chamber, the one or more filler plates being at least partially disposed on the one or more vertical surfaces. [Application Example 6] The method according to Application Example 4, Detecting the uniformity of the cleaning The method includes monitoring the residual deposits proximate one or more slit valve ports of the reaction chamber, the slit valve ports being at least partially disposed on the one or more vertical surfaces. [Application Example 7] The method according to Application Example 4, Detecting the uniformity of the cleaning detecting a thickness of the residue deposit using at least one residue sensor, the at least one residue sensor being mounted on the one or more vertical surfaces of the reaction chamber; controlling the duration of the open period and the duration of the closed period based on the detected thickness of the residual deposit; A method comprising: [Application Example 8] The method according to Application Example 1, the at least one flow characteristic is a pressure within the reaction chamber during delivery of the cleaning gas; The method comprises: and controlling a duration of an opening period and a duration of a closing period of a gate valve of the reaction chamber to adjust the pressure in the reaction chamber, wherein the gate valve is fluidly coupled to the foreline and a pump configured to perform the exhaust of the cleaning gas; The gate valve is open during the opening period and closed during the closing period. [Application Example 9] The method according to Application Example 8, Initiating the closing period of the gate valve when the pressure in the reaction chamber reaches a lower threshold; Initiating the opening period of the gate valve when the pressure in the reaction chamber reaches an upper threshold. The method further comprises: [Application Example 10] The method according to Application Example 9, The method, wherein the lower threshold is about 1.2 Torr and the upper threshold is about 6 Torr. [Application Example 11] A semiconductor substrate processing apparatus, The device comprises: a remote plasma source (RPS) configured to generate a cleaning gas; a reaction chamber in which a semiconductor substrate is processed and a residual deposit is formed, the reaction chamber being fluidly coupled to the remote plasma source for directly supplying the cleaning gas into the reaction chamber via a down tube; a pump fluidly coupled to the reaction chamber via a foreline and configured to control exhaust of the cleaning gas from the reaction chamber, the foreline terminating in a chamber pump port of the reaction chamber; a gate valve fluidly coupled to the reaction chamber and the pump through the foreline; a controller module coupled to the RPS, the reaction chamber, the gate valve, and the pump, The controller module: causing the RPS to supply the cleaning gas into the reaction chamber through the down tube, the cleaning gas forming a plurality of gas flow streamlines in the reaction chamber; each gas flow streamline of the plurality of gas flow streamlines originating at an injection point on the downtube and terminating at the chamber pump port; modifying at least one flow characteristic of the cleaning gas and redirecting at least some of the streamlines of the plurality of gas streams to circulate adjacent an inner periphery of the reaction chamber to remove the residual deposits, the inner periphery being disposed along one or more vertical planes of the reaction chamber, the one or more vertical planes being configured to be perpendicular to a horizontal plane of the reaction chamber containing the injection point; Controller module and An apparatus comprising: [Application Example 12] The device according to Application Example 11, the at least one flow characteristic is an effective pumping speed of the reaction chamber; The controller module further configured to control the duration of an opening period and the duration of a closing period of the gate valve of the reaction chamber to adjust the effective pumping speed of the reaction chamber; The gate valve is open during the opening period and closed during the closing period. [Application Example 13] The device according to Application Example 12, The apparatus, wherein the duration of the opening period of the gate valve is between about 1 second and about 2 seconds. [Application Example 14] The device according to Application Example 12, The controller module Detecting a cleaning uniformity associated with removing the residual deposits from the reaction chamber; The apparatus is further configured to control the duration of the open period and the duration of the closed period based on the detected uniformity of the cleaning. [Application Example 15] The device according to Application Example 14, To detect the uniformity of the cleaning, the controller module: 10. An apparatus further configured to monitor the residual deposits proximate one or more filler plates of the reaction chamber, the one or more filler plates being at least partially disposed on the one or more vertical surfaces. [Application Example 16] The device according to Application Example 14, To detect the uniformity of the cleaning, the controller module: an apparatus further configured to monitor the residual deposits proximate one or more slit valve ports of the reaction chamber, the slit valve ports being at least partially disposed on the one or more vertical surfaces. [Application Example 17] The device according to Application Example 11, the at least one flow characteristic is a pressure within the reaction chamber during delivery of the cleaning gas; The controller module further configured to control a duration of an opening period and a duration of a closing period of the gate valve of the reaction chamber to adjust the pressure in the reaction chamber; The gate valve is open during the opening period and closed during the closing period. [Application Example 18] The device according to Application Example 17, The controller module Initiating the closing period of the gate valve when the pressure in the reaction chamber reaches a lower threshold; further configured to initiate the opening period of the gate valve when the pressure in the reaction chamber reaches an upper threshold; The apparatus, wherein the lower threshold is about 1.2 Torr and the upper threshold is about 6 Torr. [Application Example 19] The device according to Application Example 11, further comprising at least a second gate valve fluidly coupled to the reaction chamber and the pump, wherein the at least one flow characteristic is an effective pumping speed of the reaction chamber; The controller module The apparatus is further configured to control the duration of an opening period and a closing period of the gate valve of the reaction chamber and the duration of an opening period and a closing period of the at least second gate valve to adjust the movement or position of a streamline of the gas flow in the reaction chamber; The gate valve and the at least second gate valve are open during the opening period and closed during the closing period. [Application Example 20] 1. A method for removing residual deposits from a reaction chamber, comprising: The method comprises: Supplying a cleaning gas into the reaction chamber by direct supply from a remote plasma source (RPS), wherein the cleaning gas forms a plurality of gas flow streamlines in the reaction chamber; detecting a cleaning uniformity associated with removing the residual deposits from the reaction chamber by the cleaning gas; adjusting an effective pumping speed of the cleaning gas by controlling the duration of an opening period and the duration of a closing period of the gate valve of the reaction chamber based on the uniformity of the cleaning; A method comprising: [Application Example 21] The method according to Application Example 20, Detecting the uniformity of the cleaning monitoring the residual deposits in proximity to one or more sensors mounted on at least one surface of the reaction chamber. [Application Example 22] The method according to Application Example 20, Detecting the uniformity of the cleaning The method includes monitoring the residual deposits proximate one or more slit valve ports or one or more filler plates of the reaction chamber, wherein the slit valve ports and the one or more filler plates are at least partially positioned on one or more vertical surfaces of the reaction chamber.

Claims

1. 1. A method for removing residual deposits from a reaction chamber, comprising: The method comprises: Supplying a cleaning gas into the reaction chamber by direct supply from a remote plasma source (RPS), wherein the cleaning gas forms a plurality of gas flow streamlines in the reaction chamber; each gas flow streamline of the plurality of gas flow streamlines originating at an injection point fluidly coupled to the RPS for receiving the cleaning gas and terminating at a chamber pump port coupled to a foreline for exhausting the cleaning gas from the reaction chamber; modifying at least one flow characteristic of the cleaning gas and redirecting at least some of the streamlines of the plurality of gas streams to circulate adjacent an inner periphery of the reaction chamber to remove the residual deposits, wherein the inner periphery is disposed along one or more vertical planes of the reaction chamber, the one or more vertical planes being perpendicular to a horizontal plane of the reaction chamber containing the injection point; Including, the at least one flow characteristic includes an effective pumping speed of the reaction chamber; The method further comprises: adjusting the effective pumping speed by controlling a duration of an opening period and a duration of a closing period of a gate valve of the reaction chamber, the gate valve being fluidly coupled to the foreline and a pump configured to perform the evacuation of the cleaning gas, the gate valve being open during the opening period and closed during the closing period; detecting a cleaning uniformity associated with removing the residual deposits from the reaction chamber; controlling the duration of the open period and the duration of the closed period based on the detected uniformity of the cleaning; A method comprising:

2. 10. The method of claim 1, The method, wherein the duration of the opening period of the gate valve is between 1 and 2 seconds.

3. 10. The method of claim 1, Detecting the uniformity of the cleaning 10. The method of claim 1, further comprising: monitoring the residual deposits proximate one or more filler plates of the reaction chamber, the one or more filler plates being at least partially disposed on the one or more vertical surfaces.

4. 10. The method of claim 1, Detecting the uniformity of the cleaning The method includes monitoring the residual deposits proximate one or more slit valve ports of the reaction chamber, the slit valve ports being at least partially disposed on the one or more vertical surfaces.

5. 10. The method of claim 1, Detecting the uniformity of the cleaning detecting a thickness of the residue deposit using at least one residue sensor, the at least one residue sensor being mounted on the one or more vertical surfaces of the reaction chamber; controlling the duration of the open period and the duration of the closed period based on the detected thickness of the residual deposit; A method comprising:

6. 10. The method of claim 1, the at least one flow characteristic includes a pressure within the reaction chamber during delivery of the cleaning gas; The method comprises: The method further includes controlling the duration of an opening period and the duration of a closing period of the gate valve of the reaction chamber to adjust the pressure in the reaction chamber.

7. 7. The method of claim 6, Initiating the closing period of the gate valve when the pressure in the reaction chamber reaches a lower threshold; Initiating the opening period of the gate valve when the pressure in the reaction chamber reaches an upper threshold. The method further comprises:

8. 8. The method of claim 7, The method of claim 1, wherein the lower threshold is 1.2 Torr and the upper threshold is 6 Torr.

9. A semiconductor substrate processing apparatus, The device comprises: a remote plasma source (RPS) configured to generate a cleaning gas; a reaction chamber in which a semiconductor substrate is processed and a residual deposit is formed, the reaction chamber being fluidly coupled to the remote plasma source for directly supplying the cleaning gas into the reaction chamber via a down tube; a pump fluidly coupled to the reaction chamber via a foreline and configured to control exhaust of the cleaning gas from the reaction chamber, the foreline terminating in a chamber pump port of the reaction chamber; a gate valve fluidly coupled to the reaction chamber and the pump through the foreline; a controller module coupled to the RPS, the reaction chamber, the gate valve, and the pump, The controller module: causing the RPS to supply the cleaning gas into the reaction chamber through the down tube, the cleaning gas forming a plurality of gas flow streamlines in the reaction chamber; each gas flow streamline of the plurality of gas flow streamlines originating at an injection point on the downtube and terminating at the chamber pump port; modifying at least one flow characteristic of the cleaning gas and redirecting at least some of the streamlines of the plurality of gas streams to circulate proximate an inner periphery of the reaction chamber to remove the residual deposits, the inner periphery being disposed along one or more vertical planes of the reaction chamber, the one or more vertical planes being configured to be perpendicular to a horizontal plane of the reaction chamber containing the injection point; Controller module and Equipped with the at least one flow characteristic includes an effective pumping speed of the reaction chamber; The controller module further comprises: controlling the duration of an opening period and a closing period of the gate valve of the reaction chamber to adjust the effective pumping speed of the reaction chamber, the gate valve being open during the opening period and closed during the closing period; Detecting a cleaning uniformity associated with removing the residual deposits from the reaction chamber; configured to control the duration of the open period and the duration of the closed period based on the detected uniformity of the cleaning. Device.

10. 10. The apparatus of claim 9, The apparatus, wherein the duration of the opening period of the gate valve is between 1 and 2 seconds.

11. 10. The apparatus of claim 9, To detect the uniformity of the cleaning, the controller module:

10. An apparatus further configured to monitor the residual deposits proximate one or more filler plates of the reaction chamber, the one or more filler plates being at least partially disposed on the one or more vertical surfaces.

12. 10. The apparatus of claim 9, To detect the uniformity of the cleaning, the controller module: an apparatus further configured to monitor the residual deposits proximate one or more slit valve ports of the reaction chamber, the slit valve ports being at least partially disposed on the one or more vertical surfaces.

13. 10. The apparatus of claim 9, the at least one flow characteristic includes a pressure within the reaction chamber during delivery of the cleaning gas; The controller module The apparatus is further configured to control a duration of an opening period and a duration of a closing period of the gate valve of the reaction chamber to regulate the pressure in the reaction chamber.

14. 14. The apparatus of claim 13, The controller module Initiating the closing period of the gate valve when the pressure in the reaction chamber reaches a lower threshold; further configured to initiate the opening period of the gate valve when the pressure in the reaction chamber reaches an upper threshold; The apparatus, wherein the lower threshold is 1.2 Torr and the upper threshold is 6 Torr.

15. A semiconductor substrate processing apparatus, comprising: The device comprises: a remote plasma source (RPS) configured to generate a cleaning gas; a reaction chamber in which a semiconductor substrate is processed and a residual deposit is formed, the reaction chamber being fluidly coupled to the remote plasma source for directly supplying the cleaning gas into the reaction chamber via a down tube; a pump fluidly coupled to the reaction chamber via a foreline and configured to control exhaust of the cleaning gas from the reaction chamber, the foreline terminating in a chamber pump port of the reaction chamber; a gate valve fluidly coupled to the reaction chamber and the pump through the foreline; a controller module coupled to the RPS, the reaction chamber, the gate valve, and the pump, The controller module: causing the RPS to supply the cleaning gas into the reaction chamber through the down tube, the cleaning gas forming a plurality of gas flow streamlines in the reaction chamber; each gas flow streamline of the plurality of gas flow streamlines originating at an injection point on the downtube and terminating at the chamber pump port; modifying at least one flow characteristic of the cleaning gas and redirecting at least some of the streamlines of the plurality of gas streams to circulate proximate an inner periphery of the reaction chamber to remove the residual deposits, the inner periphery being disposed along one or more vertical planes of the reaction chamber, the one or more vertical planes being configured to be perpendicular to a horizontal plane of the reaction chamber containing the injection point; A controller module; at least a second gate valve fluidly coupled to the reaction chamber and the pump; Equipped with the at least one flow characteristic is an effective pumping speed of the reaction chamber; The controller module The apparatus is further configured to control the duration of an opening period and a closing period of the gate valve of the reaction chamber and the duration of an opening period and a closing period of the at least second gate valve to adjust the movement or position of a streamline of the gas flow in the reaction chamber; The apparatus, wherein the gate valve and the at least second gate valve are open during the opening period and closed during the closing period.

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