High-pressure heat treatment equipment

Abstract

To provide a high-pressure heat treatment apparatus in which a high-temperature chamber can be rapidly cooled.SOLUTION: A high-pressure heat treatment apparatus 100 includes: an internal chamber 110 formed to accommodate an object to be heat-treated; an external chamber 120 including a high-temperature zone 125 accommodating the internal chamber and a low-temperature zone 127 having a lower temperature than the high-temperature zone; a gas supply module 130 including a process gas line 133 for supplying a process gas for the heat treatment to the internal chamber at a first pressure higher than the atmospheric pressure, and a protective gas line 135 for supplying a protective gas to the external chamber at a second pressure set in relation to the first pressure; a switch module 150 configured to switch the high-temperature zone and the low-temperature zone into a communication state; and a purge module 160 configured to purge the protective gas in the high-temperature zone toward the low-temperature zone in the communication state.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a heat treatment apparatus used to heat treat an object in a high pressure environment. [Background technology]

[0002] Generally, the ion implantation process during semiconductor manufacturing causes damage to the wafer interface. Annealing is a process that heals the damage to the wafer through heat treatment. In addition to annealing, heat treatment is also performed on wafers when activating impurities, forming thin films (CVD), and performing ohmic contact alloy processes.

[0003] During thermal processing, gas acts on the wafer. The gas is supplied at high pressure to the chamber containing the wafer. After the thermal processing is completed, the used gas is exhausted from the chamber. After the gas is exhausted, the thermally processed wafer is removed from the chamber. A new wafer and gas are then supplied to the chamber for the next thermal processing.

[0004] The chamber has a certain level of sealing power to prevent gas from leaking to the outside. The sealing power (and insulating capacity) of the chamber is an important factor in preventing heat from leaking from the chamber to the outside. This sealing power can also be an obstacle to lowering the temperature of the chamber.

[0005] Specifically, because heat treatment is performed at high temperatures, it is necessary to lower the chamber temperature during or after the heat treatment. For example, in order to remove the heat-treated wafer after the heat treatment, the chamber temperature must first be lowered. However, due to the sealing force of the chamber, it takes a long time to cool the chamber. This results in a problem of longer cycle time for the heat treatment process on the wafer. Summary of the Invention [Problem to be solved by the invention]

[0006] It is an object of the present invention to provide a high pressure heat treatment apparatus that allows for rapid cooling of the high temperature chamber when required. [Means for solving the problem]

[0007] To achieve the above object, one aspect of the present invention provides a high-pressure heat treatment apparatus, which includes: an inner chamber formed to accommodate an object to be heat-treated; an outer chamber having a high-temperature zone accommodating the inner chamber and a low-temperature zone having a temperature lower than that of the high-temperature zone; an air supply module including a process gas line for supplying a process gas for the heat treatment to the inner chamber at a first pressure higher than atmospheric pressure and a protective gas line for supplying a protective gas to the outer chamber at a second pressure set relative to the first pressure, and a switching module configured to switch the high-temperature zone and the low-temperature zone into a communication state using the air supply module; and a purging module configured to purge the protective gas in the high-temperature zone toward the low-temperature zone in the communication state.

[0008] Here, the purging module includes a ring body disposed to surround the internal chamber; and a discharge channel formed in the ring body to discharge the input purging gas toward the internal chamber.

[0009] Here, the discharge channel includes a loop line extending along the circumferential direction of the ring body; and a plurality of branch lines connected to the loop line and arranged to face the internal chamber.

[0010] Here, a heating module is further included, disposed in the high temperature zone, for heating the process gas and the protective gas in the high temperature zone, and the discharge channel is formed to discharge the purging gas into the space between the internal chamber and the heating module.

[0011] Here, the heating module includes a heater arranged to face the internal chamber; and an insulating block attached to the inner surface of the external chamber to prevent heat generated from the heater from being transferred to the outside of the external chamber, and the discharge channel discharges the purging gas so that it flows toward the insulating block.

[0012] Here, the gas supply module further includes a purging gas line for inputting the purging gas to the discharge channel.

[0013] Here, the outer chamber may include a housing having an internal space; and a partition plate that divides the internal space into the high-temperature zone and the low-temperature zone, the housing may further include a cover portion that, together with the partition plate, defines the low-temperature zone, and at least one of the cover portion and the partition plate may contain a cooling medium for cooling the protective gas purged into the low-temperature zone.

[0014] Here, the partition plate has a discharge hole that is opened to connect the high temperature area and the low temperature area, and the switching module includes a hole cover formed corresponding to the discharge hole; and a drive unit that moves the hole cover between a closed position that closes the discharge hole and an open position that opens the discharge hole.

[0015] Here, the outer chamber is formed so that the protective gas is cooled by heat exchange with the cooling medium in the low temperature zone and then circulated to the high temperature zone.

[0016] Here, an exhaust module configured to exhaust the process gas and the protective gas from the inner chamber and the outer chamber is further included, and the exhaust module exhausts the protective gas so that the second pressure is maintained when the purging module is activated.

[0017] According to another aspect of the present invention, there is provided a high-pressure heat treatment apparatus comprising: an inner chamber configured to accommodate an object to be heat-treated; an outer chamber accommodating the inner chamber; an air supply module including a process gas line for supplying a process gas for the heat treatment to the inner chamber at a first pressure higher than atmospheric pressure and a protective gas line for supplying a protective gas to the outer chamber at a second pressure set relative to the first pressure; and a purging module configured to introduce a purging gas into the outer chamber to purge the protective gas, the purging module including a ring body disposed to surround the inner chamber; and a discharge channel formed in the ring body for receiving the purging gas and discharging it toward the inner chamber.

[0018] Here, the discharge channel includes a loop line extending along the circumferential direction of the ring body; and a plurality of branch lines connected to the loop line and arranged to face the internal chamber.

[0019] Here, a heating module disposed in the outer chamber for heating the process gas and the protective gas is further included, and the discharge channel is formed to discharge the purging gas into the space between the inner chamber and the heating module.

[0020] Here, the gas supply module further includes a purging gas line connected to the protective gas line and supplying the purging gas to the discharge channel.

[0021] Here, an exhaust module configured to exhaust the process gas and the protective gas from the inner chamber and the outer chamber is further included, and the exhaust module exhausts the protective gas so as to maintain the second pressure when the purging gas is introduced. [Effects of the Invention]

[0022] In the high-pressure heat treatment apparatus according to the present invention configured as described above, the outer chamber is divided into a high-temperature zone accommodating an inner chamber and a low-temperature zone. The purging gas discharged from the purging module diffuses the protective gas in the high-temperature zone into the low-temperature zone through the passage formed by the switching module. Therefore, the protective gas heated in the high-temperature zone moves to the low-temperature zone by forced convection and is cooled by heat exchange.

[0023] The cooled protective gas can also be circulated quickly to the high temperature zone by the forced convection, rapidly cooling the high temperature zone and the inner chamber, thereby dramatically reducing the cycle time of the heat treatment process for semiconductor wafers. [Brief explanation of the drawings]

[0024] [Figure 1] 1 is a conceptual diagram of a high-pressure heat treatment apparatus 100 according to an embodiment of the present invention. [Figure 2] FIG. 2 is a block diagram for explaining the control configuration of the high-pressure heat treatment apparatus 100 of FIG. [Figure 3] 2 is a partial cross-sectional view showing one state of a configuration related to a switching module 150 and a purging module 160 of the high-pressure heat treatment apparatus 100 of FIG. 1. FIG. [Figure 4] 4 is a partial cross-sectional view showing another state of the configuration related to the switching module 150 and the purging module 160 of FIG. 3. FIG. [Figure 5] FIG. 5 is a plan view of the partition plate 123 of FIG. [Figure 6] 4 is a conceptual diagram showing one state of the switching module 150 of FIG. 3. FIG. [Figure 7] 4 is a conceptual diagram showing another state of the switching module 150 of FIG. 3. FIG. [Figure 8] FIG. 4 is a plan view showing the purging module 160 of FIG. 3. DETAILED DESCRIPTION OF THE INVENTION

[0025] Hereinafter, a high-pressure heat treatment apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. In this specification, the same or similar reference numerals are used to designate the same or similar components even in different embodiments, and the description thereof supersedes the first description.

[0026] FIG. 1 is a conceptual diagram of a high-pressure heat treatment apparatus 100 according to an embodiment of the present invention.

[0027] Referring to this figure, a high-pressure heat treatment apparatus 100 includes an inner chamber 110 , an outer chamber 120 , an air supply module 130 , an exhaust module 140 , a switching module 150 , and a purging module 160 .

[0028] The inner chamber 110 forms a storage space for accommodating an object to be heat-treated. The inner chamber 110 may be made of a non-metallic material, such as quartz, to reduce the possibility of contaminants (particles) being generated in a high-temperature, high-pressure process environment. Although simplified in the drawing, a door (not shown) that opens the storage space is provided at the bottom of the inner chamber 110. The door is lowered to open the storage space, and the object is placed in a holder (not shown) and inserted into the inner chamber 110. The temperature of the inner chamber 110 can reach several hundred degrees Celsius by operating a heater (not shown) located outside the inner chamber 110. The object may be, for example, a semiconductor wafer. In this case, the holder may be a wafer boat that can stack multiple semiconductor wafers.

[0029] The outer chamber 120 is configured to house the inner chamber 110. Unlike the inner chamber 110, the outer chamber 120 may be made of metal because it is free from the problem of contamination of semiconductor wafers. The outer chamber 120 includes a housing 121 having an internal space for housing the inner chamber 110. The housing 121 also includes a door (not shown) at its bottom. The door descends together with the door of the inner chamber 110 to open the internal space.

[0030] The internal space is divided into two zones by a partition plate 123. The lower side of the partition plate 123 may be a high temperature zone 125 where the internal chamber 110 is located. The upper side of the partition plate 123 may be a low temperature zone 127 having a lower temperature than the high temperature zone 125. The high temperature zone 125 has a temperature comparable to that of the internal chamber 110 due to heating by the heater, but the low temperature zone 127 has a temperature much lower than that of the high temperature zone 125. The low temperature zone 127 is affected by a cooling medium, for example, cooling water.

[0031] The gas supply module 130 is configured to supply gas to the chambers 110 and 120. The gas supply module 130 has a gas supplier 131 connected to a utility (gas supply facility) of a semiconductor factory. The gas supplier 131 selectively supplies process gases, such as hydrogen / deuterium, fluorine, ammonia, chlorine, and nitrogen, to the inner chamber 110. The gas supplier 131 also supplies protective gas, such as inert gas, such as nitrogen, to the outer chamber 120. The protective gas introduced into the outer chamber 120 specifically fills the space between the outer chamber 120 and the inner chamber 110. The process gas and protective gas are introduced into the inner chamber 110 and the outer chamber 120 via a process gas line 133 and a protective gas line 135, respectively. The gas supplier 131 can also provide a purging gas to the outer chamber 120. The purging gas is introduced into the outer chamber 120, specifically, the space between the outer chamber 120 and the inner chamber 110, to purge the protective gas. The purging gas may be, for example, nitrogen, an inert gas. The purging gas is introduced into the outer chamber 120 through a purging gas line 137 branched from the protective gas line 135.

[0032] The process gas and the protective gas may be supplied to form a pressure higher than atmospheric pressure, for example, several atmospheres to several tens of atmospheres. When the process gas pressure is a first pressure and the protective gas pressure is a second pressure, they may be maintained in a set relationship. For example, the second pressure may be set to be slightly higher than the first pressure. This pressure difference provides the advantage that the process gas does not leak from the inner chamber 110. During the supply of the purging gas, the protective gas is partially exhausted, and the second pressure may be maintained.

[0033] The exhaust module 140 is configured to exhaust the process gas and the protective gas from the chambers 110 and 120. An exhaust pipe 141 is connected to the upper part of the inner chamber 110 to exhaust the process gas from the inner chamber 110. The exhaust pipe 141 is disposed in the low temperature zone 127 and extends from the low temperature zone 127 to the outside of the outer chamber 120. A gas exhauster 143 may be installed in the exhaust pipe 141. The gas exhauster 143 may be a valve that allows or blocks the exhaust of the process gas.

[0034] In order to exhaust the protective gas from the outer chamber 120, an exhaust pipe 145 connected to the outer chamber 120 and a gas exhauster 147 installed therein are also provided. Since the exhaust pipes 141 and 145 are connected to each other, the process gas is diluted with the protective gas and exhausted at a lower concentration.

[0035] The switching module 150 is configured to switch the hot zone 125 and the cold zone 127 into a communication state. The switching module 150 is operable to switch the state of the partition plate 123 to achieve the communication state. When the communication state is achieved, the protective gas in the hot zone 125 can flow toward the cold zone 127.

[0036] The purging module 160 is configured to purge the protective gas in the high-temperature zone 125 toward the low-temperature zone 127. The purging module 160 is disposed to surround the inner chamber 110. The purging module 160 may also be located at a height corresponding to the lower part of the inner chamber 110. The purging module 160 discharges the purging gas into the outer chamber 120, specifically, the high-temperature zone 125. The pressure of the purging gas forces the protective gas in the high-temperature zone 125 to flow into the low-temperature zone 127. This is possible because the switching module 150 connects the high-temperature zone 125 and the low-temperature zone 127. The protective gas in the high-temperature zone 125 moves to the low-temperature zone 127, loses thermal energy, and returns to the high-temperature zone 125. The forced circulation of the protective gas and heat exchange allows the high-temperature zone 125 and the inner chamber 110 (and the semiconductor wafer) to be rapidly cooled.

[0037] The control configuration of the high-pressure heat treatment apparatus 100 will be described with reference to Fig. 2. Fig. 2 is a block diagram for explaining the control configuration of the high-pressure heat treatment apparatus 100 of Fig. 1.

[0038] Referring to this figure (and FIG. 1), the high-pressure heat treatment apparatus 100 further includes a heating module 170, a sensing module 180, a control module 190, and a storage module 195 in addition to the aforementioned air supply module 130 and the like.

[0039] The heating module 170 includes the heater described above. The heater may be disposed in the interior space of the outer chamber 120. The heater heats the process gas to a process temperature.

[0040] The sensing module 180 is configured to sense the environment of the chambers 110 and 120. The sensing module 180 includes a pressure gauge 181 and a temperature gauge 185. The pressure gauge 181 and the temperature gauge 185 may be installed in each of the chambers 110 and 120.

[0041] The control module 190 is configured to control the air supply module 130, the exhaust module 140, etc. The control module 190 can control the air supply module 130, etc. based on the detection result of the detection module 180.

[0042] The storage module 195 is configured to store data, programs, etc. that the control module 190 can refer to for control purposes. The storage module 195 includes at least one type of storage medium among a flash memory, a hard disk, a magnetic disk, and an optical disk.

[0043] With this configuration, the control module 190 can control the operation of the gas supply module 130 based on the pressures of the chambers 110, 120 obtained by the pressure gauge 181. This allows the process gas and the protective gas to be supplied to the chambers 110, 120, so that the chambers 110, 120 reach the first pressure and the second pressure.

[0044] The control module 190 can also control the operation of the switching module 150 and the air supply module 130 based on the temperature of the chambers 110, 120 obtained by the temperature gauge 185. The operation of the switching module 150 and the air supply module 130, as well as the purging module 160, occurs when the temperature of the chambers 110, 120 needs to be adjusted downward during the heat treatment or when the heat treatment is completed.

[0045] The process gas is cooled to below a set temperature by forced circulation and heat exchange of the protective gas through operation of the switching module 150, the air supply module 130, and the purging module 160. The control module 190 can operate the exhaust module 140 to exhaust the cooled process gas. This can preemptively eliminate risks such as explosions that may occur when the process gas is exhausted at a high temperature.

[0046] The control module 190 can also cause the exhaust module 140 to partially exhaust the protective gas while introducing the purging gas into the outer chamber 120, thereby maintaining the second pressure despite the introduction of the purging gas.

[0047] The specific configurations and operations of the switching module 150 and the purging module 160 will be described with reference to FIGS.

[0048] 3 is a partial cross-sectional view showing one state of the components related to the switching module 150 and purging module 160 of the high-pressure heat treatment apparatus 100 of FIG. 1, and FIG. 4 is a partial cross-sectional view showing another state of the components related to the switching module 150 and purging module 160 of FIG. 3. In this figure, the doors of the chambers 110 and 120, semiconductor wafers, etc. are omitted to avoid complicating the drawing.

[0049] Referring additionally to this figure, the housing 121 includes a body portion 121a and a cover portion 121b. The body portion 121a has a generally cylindrical shape, and the cover portion 121b has a shape corresponding to the open top of the body portion 121a. The cover portion 121b has a generally dome shape.

[0050] The partition plate 123 is disposed facing the cover portion 121b but spaced apart from it. The partition plate 123 is disposed below the cover portion 121b while being supported by the body portion 121a. The partition plate 123, together with the body portion 121a, defines a high-temperature zone 125, and the partition plate 123, together with the cover portion 121b, defines a low-temperature zone 127.

[0051] A heating module 170 is disposed in the high temperature zone 125. The heating module 170 includes a heater 171 and an insulating block 175. The heater 171 is disposed so as to be directed toward the inner chamber 110. The heat generated by the heater 171 heats the protective gas in the high temperature zone 125 and the process gas in the inner chamber 110. The insulating block 175 may be attached to the inner surface of the body 121a. The insulating block 175 blocks the heat from the heater 171 from being transferred to the body 121a. The heater 171 is a hot wire that surrounds the inner chamber 110 and may be built into the insulating block 175.

[0052] Corresponding to the heater 171, a heat insulating layer 123a is provided on the lower part of the partition plate 123. The heat insulating layer 123a is disposed on the upper side of the heating module 170 so as to face the heater 171. The heat insulating layer 123a blocks the heat generated by the heater 171 from being transferred to the low temperature area 127.

[0053] A cooling layer 123b is provided on the upper side of the partition plate 123. The cooling layer 123b has a space for accommodating a cooling medium, for example, cooling water. The cover part 121b may also have a space for accommodating cooling water corresponding to the cooling layer 123b. The cover part 121b can accommodate a larger amount of cooling water than the partition plate 123. Since the cover part 121b defines the upper part of the low-temperature zone 127, the protective gas discharged into the low-temperature zone 127 rises to its maximum and mainly exchanges heat with the cover part 121b.

[0054] The cooling water contained in the cover portion 121b and / or the cooling layer 123b fills the low temperature zone 127 with cold air, thereby maintaining a low temperature in the low temperature zone 127. The protective gas discharged into the low temperature zone 127 is cooled by heat exchange with the cold air.

[0055] An exhaust hole 123c is formed through the partition plate 123. The exhaust hole 123c connects the high temperature zone 125 and the low temperature zone 127. The exhaust hole 123c is formed at a position corresponding to the space between the inner chamber 110 and the heating module 170. The exhaust hole 123c is opened and closed by the switching module 150.

[0056] The outer chamber 120 is formed so that the protective gas circulates from the low temperature zone 127 to the high temperature zone 125. For example, the outer chamber 120 may have a gap G formed between the partition plate 123 and the body 121a, and between the body 121a and the heating module 170. In this case, the protective gas can circulate through the gap G.

[0057] The purging module 160 is configured to discharge the purging gas into the space between the inner chamber 110 and the heating module 170. The purging gas is reflected in the inner chamber 110 and flows toward the insulating block 175. Since the purging gas is discharged at room temperature, it can cool down the heat accumulated in the inner chamber 110 and the insulating block 175.

[0058] With this configuration, when the switching module 150 closes the exhaust hole 123c (FIG. 3), the heat generated by the heater 171 heats the gas in the inner chamber 110 and the high-temperature zone 125. The heat generated by the heater 171 is not easily transferred to the low-temperature zone 127 due to the insulating layer 123a. The low-temperature zone 127 is also maintained at a low temperature by the cooling water in the cover part 121b and / or the cooling layer 123b. As a result, even though the high-temperature zone 125 and the low-temperature zone 127 have the same pressure, the temperature difference between them is large.

[0059] When the process gas is to be cooled, the discharge hole 123c is opened by operating the switching module 150. The purging gas discharged through the purging gas line 137 and the purging module 160 causes forced convection of the protective gas in the high-temperature zone 125. The protective gas flows to the low-temperature zone 127 through the discharge hole 123c. The high-temperature protective gas is cooled in the low-temperature zone 127 by heat exchange with the cold cooling water. The cooled low-temperature protective gas can return to the high-temperature zone 125 through the gap G between the partition plate 123 and the body 121a (or the discharge hole 123c).

[0060] The protective gas is circulated by forced convection, so that the process gas can be rapidly cooled by heat exchange with the protective gas. After the process gas is sufficiently cooled, it is exhausted to the outside through an exhaust pipe 141.

[0061] Next, FIG. 5 is a plan view of the partition plate 123 of FIG.

[0062] Referring to this figure, the exhaust hole 123c is located off-center of the cooling layer 123b because the exhaust hole 123c is located corresponding to the space between the inner chamber 110 and the heating module 170 (see FIG. 3).

[0063] The cooling layer 123b has a disk shape, and the exhaust holes 123c may also be circular. In this case, the diameter (D1) of the exhaust holes 123c has a specific ratio to the diameter (D2) of the cooling layer 123b. Specifically, the ratio is determined to a level that can prevent thermal shock from being applied to the inner chamber 110 due to a sudden discharge of hot air during the process of discharging the protective gas in the high-temperature zone 125 to the low-temperature zone 127.

[0064] Although the exhaust hole 123c has been described above as an example of a passage through which the protective gas flows from the high temperature zone 125 to the low temperature zone 127, the passage may take other forms. For example, if the partition plate 123 is configured to rotate or elevate around a horizontal axis, the space between the partition plate 123 and the housing 121 may serve as the passage. Here, the rotation / elevation of the partition plate 123 may be performed by operation of the switching module 150.

[0065] FIG. 6 is a conceptual diagram showing one state of the switching module 150 of FIG. 3, and FIG. 7 is a conceptual diagram showing another state of the switching module 150 of FIG.

[0066] With additional reference to this figure, the switching module 150 includes a hole cover 151 , a hinge 153 , an actuator 155 , and a link 157 .

[0067] The hole cover 151 has a size corresponding to the discharge hole 123c. The hole cover 151 closes the discharge hole 123c in the closed position (FIG. 6). The hole cover 151 opens the discharge hole 123c in the open position (FIG. 7).

[0068] The hole cover 151 is rotatably connected to the partition plate 123 by a hinge 153. This allows the hole cover 151 to rotate between the closed position and the open position.

[0069] A drive unit is provided to move the hole cover 151. The drive unit includes an actuator 155 and a link 157.

[0070] The actuator 155 is configured to move forward and backward. The actuator 155 may be, for example, a cylinder that moves forward and backward. More specifically, the cylinder may be an electric cylinder that is operated by an electric motor.

[0071] Link 157 connects the moving part of the cylinder to hole cover 151. One end of link 157 is connected to hole cover 151. The other end of link 157 is rotatably connected to the moving part. To accommodate the rotation of link 157, a long hole is formed in one of link 157 and the moving part, and a pin that is movably inserted into the long hole is installed in the other.

[0072] The specific configuration of the purging module 160 will be described with reference to Fig. 8. Fig. 8 is a plan view showing the purging module 160 of Fig. 3.

[0073] Referring to this figure, purging module 160 includes a ring body 161 and a discharge channel 165 .

[0074] The ring body 161 has a generally donut shape. The ring body 161 is disposed to surround the internal chamber 110, and therefore, the hollow portion thereof has a size that allows the internal chamber 110 to be inserted therein. To form the discharge channel 165, the ring body 161 may be formed by stacking two ring-shaped plates.

[0075] The discharge channel 165 is formed in the ring body 161 and provides a path for the purging gas to be discharged toward the internal chamber 110. The discharge channel 165 has a loop line 166 and a branch line 167.

[0076] The loop line 166 is formed to extend along the circumferential direction of the ring body 161. The loop line 166 may form, for example, a circular path. The branch line 167 is connected to the loop line 166 and is arranged to direct toward the internal chamber 110. A plurality of branch lines 167 may be provided, arranged at regular intervals.

[0077] The purging gas is input to the loop line 166 via an input end 169. To this end, the input end 169 is connected to the purging gas line 137. The input end 169 may be formed on the bottom surface of the ring body 161.

[0078] The high pressure heat treatment apparatus is not limited to the configurations and operation methods of the above-described embodiments, and may be configured to allow various modifications by selectively combining all or part of each embodiment.

[0079] For example, the purging module 160 can be used in an outer chamber 120 that does not have a switching module 150 and a low-temperature zone 127. In this case, the purging module 160 can supply purging gas to the space between the inner chamber 110 and the insulating block 175 to purge the hot protective gas. Once purged, the protective gas can be exhausted by the exhaust module 140. [Explanation of symbols]

[0080] 100: High-pressure heat treatment equipment 110: Inner chamber 120: External chamber 121: Housing 123: Partition board 125: High temperature area 127: Low temperature area 130: Air supply module 140: Exhaust module 150: Switching module 151: Hole cover 155: Actuator 160: Purging module 161: Ring body 165: Discharge channel 170: Heating module 180: Sensing module 190: Control module

Claims

1. an interior chamber configured to contain an object for heat treatment; an outer chamber including a housing having an interior space and a partition plate dividing the interior space into a high temperature area containing the interior chamber and a low temperature area having a temperature lower than that of the high temperature area; an air supply module including a process gas line that supplies a process gas for the heat treatment to the internal chamber at a first pressure higher than atmospheric pressure, and a protective gas line that supplies a protective gas to the internal space at a second pressure set in relation to the first pressure; a switching module configured to switch the high temperature zone and the low temperature zone into communication; a purging module configured to purge the protective gas in the high temperature zone toward the low temperature zone in the communication state.

2. The purging module comprises: a ring body disposed to surround the internal chamber; 2. The high-pressure heat treatment apparatus of claim 1, further comprising: a discharge channel formed in the ring body for discharging the input purging gas toward the internal chamber.

3. The outlet channel is a loop line extending along the circumferential direction of the ring body; The high-pressure heat treatment apparatus according to claim 2 , further comprising: a plurality of branch lines connected to the loop line and arranged to be directed toward the internal chamber.

4. a heating module disposed in the high temperature zone to heat the process gas and the protective gas in the high temperature zone; The outlet channel is The high-pressure heat treatment apparatus of claim 2 , configured to discharge the purging gas into a space between the inner chamber and the heating module.

5. The heating module comprises: a heater positioned to direct the interior chamber; a heat insulating block attached to the inner surface of the outer chamber to block heat generated by the heater from being transferred to the outside of the outer chamber; The outlet channel is The high-pressure heat treatment apparatus according to claim 4 , wherein the purging gas is discharged so as to flow toward the insulating block.

6. The air supply module includes: The high-pressure heat treatment apparatus of claim 2 , further comprising a purging gas line for inputting the purging gas to the discharge channel.

7. The housing a cover portion that defines the low-temperature zone together with the partition plate; At least one of the cover portion and the partition plate is 2. The high-pressure heat treatment apparatus according to claim 1, further comprising a cooling medium accommodated therein that emits cold air into the low-temperature zone, and the protective gas purged into the low-temperature zone is cooled by the cold air.

8. The partition plate is a discharge hole that is opened to communicate the high temperature area with the low temperature area; The switching module includes: a hole cover formed corresponding to the discharge hole; The high-pressure heat treatment apparatus according to claim 7 , further comprising a drive unit that moves the hole cover between a closed position where the hole cover closes the discharge hole and an open position where the hole cover opens the discharge hole.

9. The outer chamber comprises: The high-pressure heat treatment apparatus according to claim 7 , wherein the protective gas is cooled by heat exchange with the cooling medium in the low-temperature zone and then circulated to the high-temperature zone.

10. further comprising an exhaust module configured to exhaust the process gas and the protective gas from the inner chamber and the outer chamber; The exhaust module includes: The high-pressure heat treatment apparatus according to claim 1 , wherein the protective gas is exhausted so that the second pressure is maintained when the purging module is activated.

11. an interior chamber configured to contain an object for heat treatment; an outer chamber including a housing having an interior space and a partition plate dividing the interior space into a high temperature area containing the interior chamber and a low temperature area having a temperature lower than that of the high temperature area; an air supply module including a process gas line that supplies a process gas for the heat treatment to the internal chamber at a first pressure higher than atmospheric pressure, and a protective gas line that supplies a protective gas to the internal space at a second pressure set in relation to the first pressure; a purging module configured to inject a purging gas into the outer chamber to purge the protective gas; The purging module comprises: a ring body disposed to surround the internal chamber; a discharge channel formed in the ring body for receiving the purging gas and discharging the purging gas toward the internal chamber.

12. The outlet channel is a loop line extending along the circumferential direction of the ring body; The high-pressure heat treatment apparatus according to claim 11, further comprising: a plurality of branch lines connected to the loop line and arranged to be directed toward the internal chamber.

13. a heating module disposed in the outer chamber for heating the process gas and the protective gas; The outlet channel is The high-pressure heat treatment apparatus of claim 11 configured to discharge the purging gas into a space between the inner chamber and the heating module.

14. The air supply module includes: The high-pressure heat treatment apparatus of claim 11 , further comprising a purging gas line connected to the protective gas line and supplying the purging gas to the discharge channel.

15. further comprising an exhaust module configured to exhaust the process gas and the protective gas from the inner chamber and the outer chamber; The exhaust module includes: The high-pressure heat treatment apparatus according to claim 11, wherein the protective gas is exhausted so as to maintain the second pressure when the purging gas is introduced.

16. The outer chamber: a cover portion that defines the low-temperature zone together with the partition plate; At least one of the cover portion and the partition plate is The high-pressure heat treatment apparatus according to claim 11, further comprising a cooling medium accommodated therein that emits cold air into the low-temperature zone, and the protective gas purged into the low-temperature zone is cooled by the cold air.

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