Systems and methods for minimizing non-uniform illumination

Abstract

To provide a process and a system allowing irradiation of a processed surface of a processed substrate so as to obtain a predefined temperature profile.SOLUTION: There is provided a system for irradiating a processed surface 5 of a processed substrate 1 so as to obtain a predefined temperature profile, the processed surface 5 comprising a first area 41 and a second area 42. The first area has a first combination of optical properties and thermal properties, and the second area has a second combination of optical properties and thermal properties, the first combination and the second combination being different.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to a system for thermal annealing of a substrate.

[0002] More precisely, the present invention relates to a system for spatially controlling the amount of energy delivered to a work surface of a substrate illuminated by a pulsed light beam, and to a method for spatially controlling the amount of energy delivered to a work surface of a substrate. [Background technology]

[0003] To fabricate semiconductor devices, semiconductor substrates are exposed to a pulsed light beam during a process called laser heat treatment. During laser heat treatment, the surface of the area exposed to the pulsed light beam is heated for a period of time to reach a predetermined temperature. For example, temperatures can exceed 1000°C in a matter of nanoseconds.

[0004] High temperatures can cause exposed areas to melt and undergo structural changes. The extent of the structural change is temperature dependent, so precise temperature control is important. Furthermore, some areas of the substrate need to reach higher temperatures than other areas that are more fragile and may be damaged by high temperatures.

[0005] At this stage of fabrication, the substrate surface has already been processed and displays several patterns. Each pattern has its own optical and thermal properties, which cause it to interact differently with the pulsed light beam. For example, the coating and / or stack of the pattern, the material of the pattern, the shape of the pattern, and / or its density affect, among other things, the amount of light absorbed by the pattern and / or its thermal diffusion, i.e., the rate at which heat is redistributed throughout the pattern and to adjacent areas. As a result, the surface temperature depends on the pattern of the substrate itself.

[0006] Patterned semiconductor substrates typically exhibit a variety of patterns, making it difficult to control the resulting surface temperature.

[0007] To solve the problem of pattern effects, various methods have been implemented in the prior art.

[0008] First, dummification consists of applying some design rules when manufacturing semiconductor devices to reduce differences in terms of patterns, making all patterns appear equivalent during laser annealing (Lin, SC, S.F. Liu, and F.L. Chen. Journal of Intelligent Manufacturing 23.3 (2012): 775-785).

[0009] Nevertheless, dummification can be very complex and in most cases impossible without reducing the density of active devices, which places significant constraints on the design and imposes trade-offs in terms of performance and loading.

[0010] The second solution consists of using a scanning laser and actively adjusting the laser energy density during scanning to maintain temperature uniformity while various patterns are exposed. Temperature nonuniformity is measured by a thermal radiation detector (Hebb, Jeffrey, et al. Advanced Semiconductor Manufacturing Conference (ASMC), 2011 22nd Annual IEEE / SEMI. IEEE, 2011). This solution closes the loop using thermal radiation detection, which requires detecting a sufficient number of photons for accuracy. Therefore, this approach is not applicable to small areas or high-speed processes. Furthermore, the thermal radiation signal must be captured close to the system, which increases the complexity of the process environment design.

[0011] Third, some prior art devices use two light sources. A first continuous light source emits a light beam configured to heat the patterned surface to a first surface temperature lower than the target temperature. The wavelength of this first continuous light is so long that small patterns are negligible and do not affect this heating. A second pulsed light source emits a pulsed light beam to provide the energy necessary to reach the target surface temperature. The overall temperature non-uniformity observed in these two successive heating steps is lower than if the patterned surface were heated directly to the target temperature by only the second pulsed light source. U.S. Patent No. 8,309,474 discloses such a device.

[0012] However, the use of two light sources increases the thermal budget of the device, an amount that needs to be kept low so as not to limit its application.

[0013] Finally, European patent EP 19315058 discloses the use of spatial masks that can compensate for pattern non-uniformities by modulating the laser irradiation within a shot. Such techniques are only applicable to large beams.

[0014] Therefore, it is desirable to develop a process that allows for uniform irradiation of the work surface of a process substrate and does not suffer from the disadvantages of the prior art. In particular, it would be advantageous to develop a process that allows for irradiation of the work surface of a process substrate to obtain a predefined temperature profile, e.g., uniform irradiation, that is simple and easy to implement, that is applicable to all situations, such as irradiation of small areas, use of narrow beams, or high-speed irradiation processes, and that requires only a low thermal budget. Summary of the Invention

[0015] Accordingly, one object of the present invention is a process for irradiating a work surface of a process substrate to obtain a predetermined temperature profile, said work surface comprising a first region and a second region, said first region having a first combination of optical and thermal properties and said second region having a second combination of optical and thermal properties, said first combination being different from the second combination; a) preferably for each illumination position, determining a reflectivity map of at least a portion of the work surface representing the reflected signals of the various illumination positions; b) providing the reflectance map determined in step a) to a control unit to determine a non-uniform illumination profile; c) irradiating the work surface of the handle substrate with the non-uniform irradiation profile determined in step b) to obtain a work surface of the handle substrate irradiated to obtain a predetermined temperature profile; It is equipped with.

[0016] The process of the present invention allows irradiation of the work surface to obtain a predetermined temperature profile, overcomes pattern effects, is easy to implement, requires a low thermal budget, and can be implemented even when the area to be irradiated is small, the beam is narrow, and / or the irradiation process is fast.

[0017] Other advantageous, non-limiting aspects of the process according to the present invention include the following. - the irradiation of the work surface to obtain a predetermined temperature profile is uniform; step a) a1) irradiating the processing surface of the processing substrate under uniform irradiation conditions; a2) detecting, during the illumination step a1), preferably for each illumination position, reflected signals at the various illumination positions; a3) determining a reflectance map of at least a portion of the work surface of the handle substrate by relating reflected signals to corresponding illumination locations; The method includes the substeps of: - the irradiation of said work surface with a non-uniform irradiation profile in step c) is performed in an ultrafast control loop, a die-to-die control loop and / or die fragmentation; - the irradiation of the work surface with the non-uniform irradiation profile in step c) is performed using a superfast control loop, the implementation of which comprises a continuous recalculation of the irradiation setpoint value depending on a comparison of the detected reflected signal with a target value; - the illumination of the work surface with the non-uniform illumination profile in step c) is performed using a die-to-die control loop, the implementation of the die-to-die control loop comprising recalculating an illumination setpoint after illumination of each die in response to a comparison of the detected reflection signal with a target value, the illumination setpoint being constant within each die; - the irradiation of the work surface with the non-uniform irradiation profile in step c) is performed using die fragmentation, and performing said die fragmentation comprises recalculating an irradiation setpoint after irradiation of each die depending on a comparison between the detected reflection signal and a target value, the irradiation setpoint being different for various areas of said die that respond differently to the irradiation, the response to the irradiation being uniform within each zone, and the irradiation setpoint being constant within each zone; - the irradiation profile determined in step b) comprises at least a first irradiation condition and a second irradiation condition, said first and second irradiation conditions having different irradiation energy densities and / or different numbers of pulses; - determining the non-uniform irradiation profile in step b) is carried out by use of at least one deterministic algorithm and / or artificial intelligence.

[0018] A further object of the present invention is to provide a system for irradiating a work surface of a process substrate to obtain a predetermined temperature profile, said work surface comprising a first region and a second region, said first region having a first combination of optical and thermal properties and said second region having a second combination of optical and thermal properties, said first combination being different from the second combination; a light source configured to emit a pulsed light beam toward the work surface, the light source coupled to an optical system suitable for modulating the fluence of the light beam; a moving stage that can move stepwise from frame to frame on the processing surface; a positioning system capable of determining the position of the substrate relative to an exposure location; a scanning system capable of uniformly scanning microspots on a large surface, preferably a frame; a feedback illumination collection system; a control unit; It is equipped with.

[0019] Other advantageous, non-limiting aspects of the system according to the present invention include the following. - uniform irradiation of the work surface to obtain a predetermined temperature profile; - said scanning system is a two-mirror galvanometer or polygon scanning system; the area of said microspots is comprised between 0.75 and 40,000 square micrometers, preferably between 0.75 and 2,000 square micrometers; - the area of said large surface is at least 26 x 33 mm 2 is; - the optical system coupled to the illumination source is an optical modulator suitable for modulating the transmission of the system; - the feedback illumination collection system comprises an optical system comprising at least one component capable of separating an illumination source signal from an illumination feedback signal, and an ultrafast detector; The optical system included in the feedback illumination collection system may perform attenuation and / or beam management of the illumination feedback signal after it has been split off from the illumination source signal. [Brief explanation of the drawings]

[0020] The following description, with reference to the accompanying drawings, will clarify what the present invention consists of and how it can be achieved. The present invention is not limited to the embodiments shown in the drawings. Therefore, when a feature recited in a claim is followed by a reference sign, it should be noted that such sign is included only to enhance the understanding of the claim and does not limit the scope of the claim.

[0021] In the attached drawing, [Figure 1] FIG. 1 is a schematic diagram of an exemplary substrate. [Figure 2] FIG. 2 is a schematic diagram of an example of a die supported by the substrate of FIG. [Figure 3] FIG. 3 illustrates a system for uniformly irradiating a work surface of a process substrate according to the present invention. [Figure 4] FIG. 4 illustrates the implementation of a process for uniformly irradiating the work surface of a handle substrate according to the present invention. [Figure 5] FIG. 5 illustrates the implementation of corrections for non-uniformity between different areas of the illuminated surface by changing the illumination conditions. [Figure 6] FIG. 6 illustrates the implementation of irradiation of the work surface with a non-uniform irradiation profile accompanied by die fragmentation. [Figure 7] FIG. 7 illustrates the detection of malfunction, degradation or defects in a system on an illuminated surface implemented with the process of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0022] In the present invention, "uniformly irradiating" a surface means that the irradiation conditions result in the same temperature being reached across the entire surface, where the predefined temperature profile of the surface exhibits a constant value across the entire surface.

[0023] The process of the present invention aims to eliminate or at least minimize illumination non-uniformities due to pattern effects on the surface of a substrate that contains regions with different optical and / or thermal properties.

[0024] Referring to FIG. 1 , handle substrate 1 is typically a silicon wafer or composite wafer such as those commonly used in the semiconductor device industry. Handle substrate 1 supports an array of dies 3 on its work surface 5. The dies 3 are separated by scribe lines 7. Handle substrate 1 also includes a peripheral region 9 located at its periphery. The peripheral region 9 is too small to support functional dies. Work surface 5 can be the entire surface of substrate 1, or it can be only a portion thereof, such as a group of dies present on the surface of substrate 1, or a single die 3 present on the surface of substrate 1. Work surface 5 corresponds to a surface that is uniformly illuminated.

[0025] 2, each die 3 includes at least a first region 11 and a second region 13. The first region 11 has a first combination of optical and thermal properties. The second region 13 has a second combination of optical and thermal properties. The first and second combinations are different.

[0026] The optical properties include the light absorption by the pattern. The optical properties are affected by different parameters of the pattern, such as the coating and / or stack of the pattern, the material of the pattern, the shape of the pattern, and / or its density. The pattern density (also referred to as "pattern loading") is the repetition rate of the pattern supported by the surface of the regions 11, 13 of the die 3.

[0027] The pattern is formed by the placement of electronic devices such as, for example, transistors, resistors, and their metal interconnects.

[0028] The reflectivity of a pattern depends on many parameters, such as the pattern density, but also on the dimension of the pattern pitch relative to the irradiation wavelength. For denser patterns, the surface of the area will be more reflective, for example. In such a case, the energy delivered by the light beam will be lower, and the temperature reached by the surface of the area will be lower.

[0029] Conversely, a sparse pattern will result in a region with a lower surface reflectivity, in which case more energy can be delivered by the light beam and the region's surface will reach a higher temperature.

[0030] As shown in FIG. 2, the second region 13 has a denser pattern than the first region 11.

[0031] The first region 11 corresponds to a first functional circuit block of the die 3. The second region 13 corresponds to a second functional circuit block of the die 3.

[0032] The thermal properties include the thermal diffusivity of the considered regions 11, 13. The thermal diffusion rate is the rate at which heat is redistributed within the die 3. The thermal diffusion rate varies depending, for example, on the material from which each region 11, 13 is constructed. Thus, the first region 11 and the second region 13 have different thermal diffusion rates.

[0033] Generally, a high thermal diffusivity results in a low surface temperature. A low thermal diffusivity results in a high surface temperature. Optical and thermal properties are interrelated, for example, because thermal diffusivity affects surface temperature, which in turn affects the optical property of reflectance.

[0034] Each region 11, 13 has a surface area at least equal to 1 μm×1 μm and up to 26 mm×33 mm.

[0035] The exemplary die 3 shown in FIG. 2 includes a third region 15, a fourth region 17, and a fifth region 19.

[0036] The third region 15 has a third combination of optical and thermal properties. The fourth region 17 has a fourth combination of optical and thermal properties. The fifth region 19 has a fifth combination of optical and thermal properties. All combinations may be different. Alternatively, some combinations may be similar.

[0037] All dies 3 supported by the work surface 5 of the handle substrate 1 are preferably similar.

[0038] The presence of at least two regions 11, 13 within the die 3 may result from, for example, different layouts, different structures, different materials, and / or different stacks within the die 3.

[0039] FIG. 3 illustrates a system 21 for uniformly irradiating a work surface 5 of a handle substrate 1, the system 21 including a first region and a second region, the first region having a first combination of optical and thermal properties and the second region having a second combination of optical and thermal properties, the first and second combinations being different for spatially controlling the amount of energy delivered to the work surface 5 of the handle substrate 1.

[0040] The system 21 comprises a light source 23 configured to emit a pulsed light beam towards the work surface 5 of the work substrate 1 .

[0041] The light source 23 is an ultraviolet (UV) light source. The light source 23 includes a laser light source. Various types of laser light sources can be used here, such as a solid-state laser, a fiber laser, or an excimer laser light source. For example, an excimer laser light source can be used here. The wavelength of the emitted pulsed light beam is less than 1064 nanometers (nm) and even lower than 532 nanometers. Preferably, the wavelength of the emitted pulsed light beam is 355 nanometers or less.

[0042] The light source 23 operates in a pulsed mode, for example, generating nanosecond pulses with a full width at half maximum (FWHM) of less than 1 to 500 nanoseconds at a rate of 1 to over 150 MHz.

[0043] The light source 23 is coupled to an optical system 25 suitable for modulating its fluence. The fluence corresponds to the energy delivered by the light source 23 per unit area of the work surface 5 of the work substrate 1. The optical system 25 is arranged on the beam path between the light source 23 and the work substrate 1. The optical system 25 can be, for example, an optical modulator suitable for modulating the transmission of the system. The modulation by the optical system 25 can be performed by modifying the transmission of the light beam by different physical means (and related physical phenomena). Various examples of physical means can be cited: acoustic waves that modify the optical properties of a material; electroabsorption modulation and electro-optical systems that apply a voltage to modify the optical properties of a material; or magneto-optical modulation that modifies the propagation of light by applying a magnetic field to a material.

[0044] In practice, modulation by the optical system 25 can be performed, for example, by acousto-optical modulators, electro-absorption modulators, electro-optical modulators, magneto-optical modulators, or micro- or nano-electromechanical devices (MEMS and NEMS).

[0045] The translation stage 27 can move in two directions in order to move stepwise from one frame of the work surface 5 to another.

[0046] The frame is a repeatable pattern photolithographically printed on the wafer. The system 21 is preferably adapted to irradiate the work surface 5 of the substrate 1 by repeatedly scanning different frames present on the work surface 5 of the substrate 1. The substrate 1 is scanned by the microspots. Once the first frame is completely scanned, the translation stage 27 moves the substrate 1 to allow irradiation of additional frames on the work surface 5 of the substrate 1. The frame includes one or several dies 3, each including at least a first region 11 and a second region 13 with different optical and / or thermal properties. Scanning the frames of the work surface of the substrate 1 is not necessarily performed with uniform illumination conditions within the frame, since illumination conditions may change from one die 3 to another, or even within the same die 3.

[0047] A positioning system 31 is provided that is able to identify the position of the substrate 1 relative to the exposure position.

[0048] The uniform scanning of the microspots over a large surface is performed by a scanning system 33. The scanning system 33 is a two-mirror galvanometer, or alternatively, the scanning system 33 is any other suitable scanning system for uniformly scanning the microspots over a large surface, such as a polygonal scanning system.

[0049] The microspot uniformly scanned by the scanning system 33 may be of any suitable size and shape. In particular, it may present an area comprised between 0.75 and 40,000 square micrometers, preferably between 0.75 and 2,000 square micrometers. Such an area value corresponds, for example, to a circular spot having a diameter comprised between 1 and 50 micrometers.

[0050] The large surface is, for example, the surface of a frame. The large surface must be at least 26 x 33 mm. 2 is.

[0051] The feedback illumination collection system 35 is suitable for collecting the reflected beam. The feedback illumination collection system 35 includes an optical system 351 including appropriately oriented mirrors in the system of FIG. 3 , but may be any other optical system suitable for, among other things, directing the feedback illumination signal to a collection system 352. In one embodiment, the feedback collection system 35 includes an optical system 351 including at least one component 3511 capable of separating the illumination source signal from the illumination feedback signal, and a collection system 352 that is an ultrafast detector. The optical system 351 can further perform attenuation and / or beam management of the illumination feedback signal after it is separated from the illumination source signal. If the collection system 352 is sufficiently fast with respect to the illumination repetition rate, the reflected signal is detected after each pulse. Alternatively, if the collection system 352 is slow with respect to the illumination repetition rate, the reflected signal is detected as an average value over several consecutive pulses.

[0052] An optical system 37 in the form of a lens is provided between the scanning system 33 and the surface 5 of the substrate 1 to be illuminated. The optical system 37 is coupled to the scanning system 33 and ensures that the illumination beam exhibits the same properties, such as the same angle, same focus and same dimensions, over the entire large surface scanned by the microspot.

[0053] The control unit 39 controls the interaction of the different parts of the system 21. The control unit 39 synchronizes the different parts of the system 21.

[0054] System 21 operates as follows: an illumination beam interacts with work surface 5 of process substrate 1, some of which is absorbed and some of which is reflected. Specifically, the illumination energy density reaching work surface 5 of process substrate 1 is the sum of the absorbed illumination and the reflected illumination. System 21 is calibrated to control the energy density on work surface 5 of process substrate 1. Knowing the energy density on work surface 5 of process substrate 1 and the reflected energy measured by feedback collection system 35, it is possible to calculate the absorbed energy density. The reflected portion of the illumination signal can vary from a few percent to over 90%, and depends primarily on the pattern, stack, and / or material of the area within die 3.

[0055] The feedback illumination collection system 35 can collect reflected signals, and the positioning system 31 controls the precise illumination and feedback position within the die 3, so that the system associates the reflected energy measured during illumination with the illumination position to generate a reflectance map 45 of the illuminated area. The reflectance map 45 is inversely proportional to the absorbed energy and, roughly speaking, inversely proportional to the temperature of at least a portion of the illuminated region of the work surface 5 of the handle substrate 1. The reflectance map 45 is a reflectance map of at least a portion of the work surface 5 of the handle substrate 1. In one embodiment, the generated reflectance map 45 is a reflectance map of a single die 3 of the work surface 5 of the handle substrate 1. The work surface 5 of the handle substrate 1 can be determined by associating the reflected signals with the corresponding illumination positions (step a3). The corresponding illumination positions are preferably determined by the positioning system 31.

[0056] Referring to FIG. 4, the depicted process corresponds to sub-step a1 of illuminating the processing surface 5 of the processing substrate 1 under uniform illumination conditions, and sub-step a2 of detecting reflected signals at different illumination positions during the illumination step a1.

[0057] The beam scans the die 3 present on the surface 5 of the substrate 1 along the path embodied by the dotted arrow. The scan path therefore passes successively through a first region 41 of the die 3, a second region 42 of the die 3, and a third region 43 and a fourth region 44 of the die 3. The scan is uniform over a single die 3, with all pulses having the same length and intensity.

[0058] The acquisition system 352 acquires a reflected signal at each illumination position. The determination of the reflected signal is alternatively performed as an average value of several consecutive illumination positions, for example, 2 to 10 consecutive illumination positions. As can be seen in the pulse representation, the reflected signal at each region 41, 42, 43, and 44 of the die 3 varies in intensity from one region to another. The reflected signal is uniform for each region 41, 42, 43, and 44 of the die 3. A 2D reflection map 45 corresponding to the scanned die is obtained, with different regions 421, 422, 423, and 424 corresponding to regions 41, 42, 43, and 44 of the die 3, respectively.

[0059] 5, the left portion represents the implementation of step a1, where all regions 41, 42, 43, and 44 of die 3 are uniformly illuminated and a non-uniform reflected signal is collected by collection system 352 to determine 2D reflectance map 45. The right portion represents the implementation of step c, where die 3 is illuminated with a non-uniform illumination profile determined from 2D reflectance map 45. The reflected signal collected by collection system 352 is uniform, ensuring that the surface illumination is uniform with respect to the energy provided to die 3, whatever the optical and thermal properties of each region 41, 42, 43, or 44 of die 3.

[0060] Referring to Figure 6, an implementation of step c using die fragmentation is shown. Each area of the die 3, outlined by a double line, is illuminated under uniform conditions. The left panel shows several dies, with the central die 3 being scanned under uniform illumination conditions to provide the determination of a 2D reflectance map 45, which is input to the control unit 39. The control unit 39 then determines a non-uniform illumination profile—step b—that is used to illuminate the next die and is displayed in the center panel. The non-uniform illumination profile is embodied in the center panel by four different areas outlined by double lines, corresponding to four different regions of the die. The right panel shows a detail of one area of the die illuminated under uniform illumination conditions. Die fragmentation preferably involves recalculating the illumination settings after each die is illuminated in response to a comparison of the detected reflectance signal with a target value. Different illumination settings are used for areas of the die that respond differently to illumination. The response to illumination is uniform across each area, and the illumination settings are constant across each area.

[0061] Alternatively, or in addition to die fragmentation, step c is performed by a very fast control loop, an inter-frame control loop, and / or an inter-die control loop.

[0062] The implementation of an ultrafast control loop consists of continuously recalculating the irradiation setpoint depending on the comparison of the detected reflected signal with the target value. «Continuous recalculation» corresponds to recalculating the irradiation setpoint after each laser pulse or after a predetermined number of laser pulses. The predetermined number of laser pulses can range from two to several hundred.

[0063] The implementation of the die-to-die control loop involves recalculating the exposure setpoint after each die 3 is exposed, depending on the comparison of the detected reflectance signal with a target value. The exposure setpoint is constant within each die. All dies 3 should have comparable reflectance maps 45. Nevertheless, lithography or deposition variability can cause die-to-die non-uniformity, either in a given subregion of the die or on average. Therefore, the die-to-die control loop is particularly useful for processed substrates 1 obtained with little or no lithography or deposition variability.

[0064] The reflectance map 45 determined after the illumination of the first die 3 is provided to the control unit 39, which determines the non-uniform illumination profile to be used to illuminate the next die. This iteration is repeated until no variation or a low level of variation is obtained in the 2D reflectance map 45. Once this stage is reached, no recalculation of the non-uniform illumination profile is required for illuminating further dies.

[0065] 7, the process according to the present invention also allows for the detection of other sources of variability, such as substrate defects, particle or pattern defects, or system malfunction or degradation. Uniform illumination of die 73, which exhibits the same optical and thermal properties across its entire area, provides a uniform 2D reflectance map 75. Conversely, a variation source 72 causes changes in optical and / or thermal properties, and uniform illumination of die 71, which includes variation source 72, provides a non-uniform 2D reflectance map 74, which includes non-uniformity 76. Further implementation of step c) of the process according to the present invention causes uniform illumination of the entire die 71 with respect to the energy provided to die 71, despite the presence of variation source 72.

[0066] Detection of other sources of variability may, of course, be similarly performed within dies that exhibit non-uniform optical and / or thermal properties in addition to at least one source of variability.

[0067] Therefore, the process according to the invention comprises, after step a), an additional step of analysis of the reflectivity map determined in step a) in order to identify the presence and / or nature of at least one non-uniformity caused by a source of variation selected from the group consisting of substrate defects, particle or pattern defects, or system malfunction or degradation.

[0068] The analysis step may optionally trigger appropriate action, such as, for example, running the process despite the identified defects, stopping the performance of the process, and / or alerting to the presence of the identified non-uniformity, for example, via an alarm signal.

Claims

1. A process for irradiating a work surface (5) of a handle substrate (1) to obtain a predetermined temperature profile, said work surface (5) supporting an array of dies (3), each die (3) comprising a first region (11) and a second region (13), said first region (11) having a first combination of optical and thermal properties and said second region (13) having a second combination of optical and thermal properties, said first combination being different from the second combination; a) determining a reflectance map (45) of at least a portion of the work surface (5) representing the reflected signals of various illumination positions within each die (3); b) providing the reflectance map (45) determined in step a) to a control unit (39) to determine a non-uniform illumination profile; c) irradiating the processing surface (5) of the processing substrate (1) with the non-uniform irradiation profile determined in step b) to obtain a processing surface (5) of the processing substrate (1) irradiated to obtain a predetermined temperature profile; A process comprising:

2. 2. The process of claim 1, Step a) a1) irradiating the processing surface (5) of the processing substrate (1) under uniform irradiation conditions; a2) detecting reflected signals at various illumination positions during the illumination step a1); a3) determining a reflectance map (45) of at least a portion of the work surface (5) of the process substrate (1) by associating reflected signals with corresponding illumination positions; A process comprising the substeps of:

3. 3. The process according to claim 1 or 2, A process characterized in that the irradiation of said work surface (5) with a non-uniform irradiation profile in step c) is performed in an ultrafast control loop, a die-to-die control loop, and / or die segmentation.

4. 4. The process according to claim 3, characterized in that the irradiation of the work surface (5) with a non-uniform irradiation profile in step c) is performed using an ultrafast control loop.

5. 4. The process of claim 3, The irradiation of the work surface (5) with a non-uniform irradiation profile in step c) is carried out using a die-to-die control loop, implementing the die-to-die control loop comprises recalculating exposure settings after exposure of each die (3) in response to a comparison of the detected reflected signals with target values; A process characterized in that the exposure settings are constant within each die (3).

6. 4. The process of claim 3, The irradiation of the work surface (5) with a non-uniform irradiation profile in step c) is carried out using disintegration, performing said die fragmentation comprises recalculating the exposure settings after exposure of each die (3) in response to a comparison of the detected reflected signal with a target value; A process characterized in that the illumination settings are different for different areas (11, 13) of said die (3) which respond differently to illumination, the response to illumination being uniform within each zone and the illumination settings being constant within each zone.

7. In the process according to any one of claims 1 to 6, The process, characterized in that the non-uniform irradiation profile determined in step b) comprises at least a first irradiation condition and a second irradiation condition, the first and second irradiation conditions having different irradiation energy densities and / or different numbers of pulses.

8. In the process according to any one of claims 1 to 7, A process characterized in that the determination of the non-uniform irradiation profile in step b) is carried out by use of at least one deterministic algorithm and / or artificial intelligence.

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