Liquid ejection head, liquid ejection unit, device for ejecting liquid, and method for manufacturing liquid ejection head
By implementing deposition film fabrication before etching in the Bosch process, the liquid ejection head achieves uniform nozzle dimensions, improving ink landing accuracy and reducing mist generation.
Patent Information
- Application Number
- JP2021122625
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2021-07-27
- Publication Date
- 2025-08-13
- Estimated Expiration
- 2041-07-27
AI Technical Summary
Conventional nozzle manufacturing methods using the Bosch process result in variations in nozzle edge shape, leading to changes in ink ejection speed and reduced ink landing accuracy due to non-uniform nozzle dimensions.
A liquid ejection head with nozzles featuring cylindrical shapes on the side walls, where the outermost nozzle diameter is smaller than the average of minimum and maximum diameters, achieved by performing deposition film fabrication before the first etching step to maintain uniformity and precision.
Improves the uniformity of nozzle dimensions, enhances ink landing accuracy, and reduces mist generation by stabilizing ejection speed and waveform affinity.
Smart Images

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Abstract
Description
[Technical Field]
[0001] The present invention relates to a liquid ejection head, a liquid ejection unit, a device for ejecting liquid, and a method for manufacturing a liquid ejection head. [Background technology]
[0002] For the nozzle plates of inkjet heads, a technique using dry etching with the Bosch process is known. In this technique, patterns are formed on the front and back of a silicon substrate, which are then processed by dry etching to form interconnections, thereby producing a nozzle plate.
[0003] For example, Patent Document 1 discloses a nozzle substrate and a manufacturing method thereof that aims to make the size of an ink ejection port appropriate. In Patent Document 1, the nozzle hole of the nozzle substrate consists of a recess formed in a first surface of a semiconductor substrate and penetrating the semiconductor substrate, and an ink ejection passage with a circular cross section formed in the bottom surface of the recess and penetrating the bottom wall of the recess. The diameter of the ink ejection passage changes periodically in the depth direction, and the diameter of the ink ejection port, which is the open end on the opposite side to the recess, is larger than the average value of the minimum and maximum diameters of the ink ejection passage.
[0004] Furthermore, Patent Document 1 uses a Bosch process in which a sidewall protective film formation step and an etching step are alternately repeated. Patent Document 1 points out that the etching rate is low in the initial etching, and that part of the sidewall protective film remains, which is considered an abnormality. To prevent such an abnormality from occurring, the etching step in the Bosch process is performed before the sidewall protective film formation step, with the aim of preventing etching defects that occur during dry etching of silicon. Summary of the Invention [Problem to be solved by the invention]
[0005] However, in conventional technology, variations in the nozzle edge shape cause changes in nozzle dimensions, which in turn changes the ink ejection speed, reducing the ink landing accuracy or reducing affinity with the ejection waveform, resulting in the generation of mist.
[0006] SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a liquid ejection head in which the uniformity of the diameter of the outermost nozzle portion of the nozzle plate is improved. [Means for solving the problem]
[0007] In order to solve the above-mentioned problems, the present invention provides a liquid ejection head comprising a nozzle plate having nozzles, wherein the nozzles have a cylindrical shape with periodic concave and convex shapes formed on the side walls thereof, the cylindrical shape being oriented in a thickness direction of the nozzle plate. Two and the diameter of the outermost part of the nozzle in the cylindrical shape on the liquid ejection surface side is smaller than the average value of the minimum and maximum diameters of the cylindrical shape defined below. the average values in at least two of the cylindrical shapes are different from each other, the average value in the cylindrical shape on the liquid ejection surface side is smaller than the average value in the other cylindrical shapes, and the layer on which the one cylindrical shape is formed and the layer on which the other cylindrical shape is formed have different etching selectivity with respect to dry etching of silicon. It is characterized by: [Average of the minimum and maximum diameters of the cylindrical shape] Average value = (sum of minimum values + sum of maximum values) / (number of minimum values + number of maximum values) [Effects of the Invention]
[0008] According to the present invention, it is possible to provide a liquid ejection head in which the uniformity of the diameter of the outermost nozzle portion in the nozzle plate is improved. [Brief explanation of the drawings]
[0009] [Figure 1A] 1A to 1C are schematic diagrams illustrating an example of the production method of the present invention. [Figure 1B] 5(d) to 5(f) are schematic diagrams illustrating an example of the production method of the present invention. [Figure 1C] 1A to 1C are schematic diagrams (g) to (i) illustrating an example of the production method of the present invention. [Figure 2]FIG. 2 is a schematic diagram illustrating an example of a nozzle according to the present invention. [Figure 3] 1A and 1B are images of the internal cross section of an example of a nozzle according to the present invention, showing an image of the nozzle at the center of the wafer and an image of the nozzle at the periphery of the wafer. [Figure 4] FIG. 4 is a schematic diagram illustrating another example of a nozzle according to the present invention. [Figure 5] 5A and 5B are other schematic diagrams for explaining other examples of the nozzle according to the present invention. [Figure 6A] FIG. 4 is a schematic diagram illustrating another example of a nozzle according to the present invention. [Figure 6B] FIG. 4 is a schematic diagram illustrating another example of a nozzle according to the present invention. [Figure 7A] FIG. 2 is a schematic diagram illustrating another example of the manufacturing method of the present invention. [Figure 7B] FIG. 2 is a schematic diagram illustrating another example of the manufacturing method of the present invention. [Figure 7C] FIG. 4 is a schematic diagram illustrating another example of a nozzle according to the present invention. [Figure 8A] 5A to 5C are schematic diagrams illustrating another example of the production method of the present invention. [Figure 8B] 5(d) to 5(f) are schematic diagrams illustrating another example of the production method of the present invention. [Figure 8C] 5(g) and 5(h) are schematic diagrams illustrating another example of the production method of the present invention. [Figure 9] FIG. 1 is a schematic diagram of an example of a liquid ejection device. [Figure 10] FIG. 10 is a schematic diagram of another example of the liquid ejection device. [Figure 11] FIG. 2 is a schematic diagram of an example of a liquid ejection unit. [Figure 12] FIG. 10 is a schematic diagram of another example of the liquid ejection unit. [Figure 13A] 1A to 1C are schematic diagrams illustrating a conventional manufacturing method. [Figure 13B] 10(d) to 10(f) are schematic diagrams for explaining a conventional manufacturing method. [Figure 13C] FIG. 10 is a schematic diagram for explaining a nozzle in a conventional example. [Figure 13D] FIG. 10 is a schematic diagram for explaining a nozzle in a conventional example. DETAILED DESCRIPTION OF THE INVENTION
[0010] Hereinafter, a liquid ejection head, a liquid ejection unit, a liquid ejection device, and a method for manufacturing a liquid ejection head according to the present invention will be described with reference to the drawings. Note that the present invention is not limited to the following embodiments, and other modifications, additions, corrections, deletions, and other changes can be made within the scope of what a person skilled in the art can conceive. Any aspect is within the scope of the present invention as long as it achieves the functions and effects of the present invention.
[0011] The liquid ejection head of the present invention is a liquid ejection head equipped with a nozzle plate having nozzles, wherein the nozzles have one or more cylindrical shapes with periodic unevenness formed on the side walls in the thickness direction of the nozzle plate, and the diameter of the outermost part of the nozzle on the liquid ejection surface side of the cylindrical shape is smaller than the average value of the minimum and maximum diameters of the cylindrical shape defined below. [Average of the minimum and maximum diameters of the cylindrical shape] Average value = (sum of minimum values + sum of maximum values) / (number of minimum values + number of maximum values)
[0012] The method for manufacturing a liquid ejection head of the present invention is a method for manufacturing a liquid ejection head equipped with a nozzle plate having a nozzle, and is characterized in that the nozzle plate is manufactured using a Bosch process including an etching step of etching a substrate and / or a deposition film, and a deposition film manufacturing step of manufacturing a deposition film that protects the substrate, and the deposition film manufacturing step is carried out before the first etching step is carried out, and the nozzle has one or more cylindrical shapes with periodic uneven shapes formed on the side walls in the thickness direction of the nozzle plate, and the diameter of the outermost part of the cylindrical shape on the liquid ejection surface side is made smaller than the average value of the minimum and maximum diameter values of the cylindrical shape defined below. [Average of the minimum and maximum diameters of the cylindrical shape] Average value = (sum of minimum values + sum of maximum values) / (number of minimum values + number of maximum values)
[0013] According to the present invention, it is possible to improve the uniformity of the diameter of the outermost nozzle portion in the nozzle plate. In the present invention, it is possible to control the shape of the nozzle holes in the liquid ejection surface and improve the uniformity of the dimensions.
[0014] The present invention also provides a liquid ejection unit including the liquid ejection head of the present invention, and a device for ejecting liquid including the liquid ejection head or liquid ejection unit of the present invention. An inkjet head, for example, is provided as an embodiment of the liquid ejection head of the present invention, and an inkjet recording device, for example, is provided as an embodiment of the device for ejecting liquid of the present invention.
[0015] Inkjet recording devices have many advantages, such as extremely low noise, high-speed printing, flexibility in ink selection, and the ability to use inexpensive plain paper, etc. For these reasons, inkjet recording devices are widely used as image recording devices or image forming devices such as printers, facsimiles, and copying machines.
[0016] A liquid ejection head is formed by, for example, an electromechanical conversion element such as a piezoelectric element, an electrothermal conversion element such as a heater, a pressure chamber (also called an ink flow path, pressurized liquid chamber, pressure chamber, ejection chamber, liquid chamber, etc.) facing the element, and a nozzle communicating with the pressure chamber. In such a liquid ejection head, the pressure chamber is filled with liquid (e.g., ink), pressure is generated in the pressure chamber by the piezoelectric element or heater, and the liquid is ejected from the nozzle communicating with the pressure chamber. The liquid ejection head of this embodiment is equipped with a nozzle plate having nozzles.
[0017] The most important aspect of a liquid ejection head's performance is to land ink droplets at the desired location. To achieve this, the nozzle must be oriented perpendicular to the target, the nozzle edge must be perfectly round, and the nozzle diameter must be uniform.
[0018] It is not difficult to imagine that if the nozzle is not perpendicular to the target, the droplet landing position will be misaligned. If the nozzle edge is not perfectly round and has protrusions or burrs, the droplets will curve from that point, reducing the accuracy of the landing position. If the nozzle diameter is not uniform and varies, the fluid resistance will vary from nozzle to nozzle, changing the speed of the ejected droplets. Because the printing mechanism involves the movement of the inkjet head or the printing target (recording medium), if the speed of the ejected droplets changes, the landing position will also change.
[0019] Nozzle manufacturing methods include the press method, which uses a press to make holes in a metal plate, and the dry etching method, which uses etching to make holes in a silicon substrate. The former method makes it difficult to control the shape, and burrs are likely to form on the nozzle edge, which can cause problems such as the droplets bending. For this reason, the latter dry etching method using the Bosch process is mainly used because of its high controllability of the shape.
[0020] While dry etching can improve the circularity of the processed part, it is difficult to improve the uniformity of the nozzle diameter with either the pressing method or the dry etching method. In order to make the nozzle diameter uniform, with the dry etching method, it is necessary to precisely control the finished shape of the nozzle edge on the side that ejects the liquid.
[0021] The Bosch process, a type of dry etching method, involves an etching process in which the substrate and / or deposition film is etched, and a deposition film fabrication process in which a deposition film is fabricated to protect the substrate. In the Bosch process, vertical processing of Si is achieved by alternately performing the etching process and the deposition film fabrication process. The Bosch process allows for high dimensional controllability and facilitates vertical processing.
[0022] The etching process is divided into two steps. The two steps are a deposition removal step in which the electrode bias is increased to bombard the wafer with ions to remove the deposition film, and an isotropic etching step in which the Si is chemically removed without applying voltage. In the etching process, the deposition removal step and the isotropic etching step are performed in this order. The names of the steps may be changed as appropriate.
[0023] In the deposition removal step, the Si is also removed by the excess energy remaining after removing the deposition film.
[0024] The Si substrate to be etched is patterned with a resist and usually has a thin native oxide film on its surface.
[0025] The deposition film is sometimes called a sidewall protection film because it protects the sidewall during vertical processing.
[0026] Before describing the details of this embodiment, a conventional example will be described with reference to FIG. To give an overview, in the conventional method, the initial etching step is performed first, followed by the deposition film fabrication step, and then the etching step and deposition film fabrication step are performed alternately. In this case, when the native oxide film is removed in the first step, the resist is also removed, resulting in a decrease in the uniformity of the nozzle dimensions across the wafer after processing. Furthermore, because the Si is removed after the native oxide film is removed in the deposition removal step, if the etching gas uniformity is poor, the shape of the first cycle will also vary across the wafer.
[0027] The conventional manufacturing method will be described with reference to the drawings. In the conventional method, an etching step is first performed. 13A(a) is a diagram showing the state before the first etching step is performed. A native oxide film 102 is formed on the surface of a Si substrate 101, and a resist 103 is formed on the native oxide film 102.
[0028] 13A(b) shows the state after the deposit removal step in the first etching process. The deposit removal step removes the native oxide film 102, which also removes the resist 103. The figure shows a schematic of the resist 103 being removed. The removal of the resist reduces the uniformity of the nozzle dimensions within the wafer surface.
[0029] 13A(b), in the deposit removal step, the Si substrate 101 is eroded by excess energy after removing the native oxide film 102. The eroded portion of the Si substrate 101 is indicated by reference numeral 106a.
[0030] 13A(c) is a diagram showing the state after the isotropic etching step in the first etching process. As shown in the figure, the Si substrate 101 has been etched away. The etched portion of the Si substrate 101 is indicated by reference numeral 106b.
[0031] Next, a deposition film forming step is carried out. 13B(d) is a diagram showing a state after a deposition film 107a has been formed on the Si substrate 101. The deposition film 107a is formed on the resist 103 and on the scraped portion (106b) of the Si substrate 101.
[0032] A second etching step is then carried out. 13B(e) is a diagram showing the state after the deposition removal step in the etching process. By carrying out etching for a predetermined time, the bottom surface of the deposition film 107a is removed.
[0033] 13B(f) is a diagram showing the state after the isotropic etching step in the etching process. As shown in the figure, the Si substrate 101 has been etched away. The etched portion of the Si substrate 101 is indicated by reference numeral 106c. As shown in the figure, at this stage, the Si substrate 101 has been etched away as indicated by reference numerals 106b and 106c.
[0034] Thereafter, the deposition film forming step and the etching step are repeated. 13C is a diagram showing a conventional nozzle 115 formed as described above. In the figure, reference numeral 114 denotes the liquid ejection surface. D1 denotes the diameter of the outermost part of the nozzle 115. D2, D4, D6, D8, and D10 denote the minimum diameter values of the cylindrical shape of the nozzle, and D3, D5, D7, and D9 denote the maximum diameter values of the cylindrical shape.
[0035] As will be described in detail later, the diameter D1 of the outermost portion of the nozzle 115 is larger than the average value Dav of the minimum and maximum diameters of the cylindrical shape. This is because the resist 103 was scraped off in the first etching process. Furthermore, in the conventional example, the uniformity of the nozzle across the wafer surface was reduced, causing the diameter D1 of the outermost portion to vary.
[0036] 13D is a diagram illustrating a nozzle formed according to Patent Document 1. The diameter D1 of the outermost part of the nozzle is larger than the average value of the minimum and maximum values of the cylindrical shape of the nozzle.
[0037] Next, one embodiment of the present invention will be described with reference to FIG. To give an overview, in this embodiment, when fabricating a nozzle plate using the Bosch process, a deposition film fabrication process is performed before the first etching process. This reduces resist loss during the first etching process and prevents a decrease in uniformity of nozzle dimensions. Furthermore, in the first etching process, the native oxide film is removed using excess energy from the deposition removal process, and then the Si is removed by isotropic etching. This allows the shape of the first cycle to be consistent across the wafer, improving the uniformity of the nozzle shape.
[0038] First, a deposition film forming step is performed before the first etching step is performed. 1A(a) shows the state before the first etching step and the state after the deposition film forming step. A native oxide film 102 is formed on the surface of a Si substrate 101, and a resist 103 is formed on the native oxide film 102. Furthermore, by performing the deposition film forming step, a deposition film 104a is formed on the resist 103 and the native oxide film 102.
[0039] The deposition film protects the sidewalls during vertical processing, and is therefore sometimes referred to as a sidewall protection film, etc. In this embodiment, the material and manufacturing method of the deposition film are not particularly limited and can be selected appropriately.
[0040] Next, the first etching step is performed. 1A(b) is a diagram showing the state after the deposition removal step in the first etching process. As shown in the figure, the deposition film 104a has been removed. In this embodiment, in the deposition removal step in the first etching process, a portion of the native oxide film 102 is removed by the excess energy generated when removing the deposition film 104a. In the figure, reference numeral 102a denotes a portion of the native oxide film 102 remaining after the deposition removal step.
[0041] 1A(c) shows the state after the isotropic etching step in the first etching process. The isotropic etching step removes a portion (reference numeral 102a) of the native oxide film 102 and also removes the Si substrate 101. The portion of the Si substrate 101 that is removed at this time is indicated by reference numeral 105a.
[0042] 1A(b) of this embodiment, it is clear that in this embodiment, damage to the resist 103 can be suppressed in the first etching step. Therefore, it is possible to suppress variation in the shape (diameter) of the outermost nozzle portion within the wafer.
[0043] 1A(c) of this embodiment, it is clear that in this embodiment, excessive removal of the Si substrate 101 can be prevented during the isotropic etching step in the initial etching process. This prevents the diameter of the outermost part of the nozzle from becoming larger than the target size, improving dimensional uniformity.
[0044] Thereafter, the deposition film forming step and the etching step are repeated. FIG. 1B(d) is a diagram showing the state after the second deposition film forming step has been performed, and shows the state after a deposition film 104b has been formed on the Si substrate 101 and the resist 103.
[0045] A second etching step is then carried out. 1B(e) is a diagram showing the state after the deposition removal step in the etching process. By carrying out etching for a predetermined time, the deposition film 104b is removed.
[0046] As shown in the figure, after the current deposition removal step, a portion of the deposition film 104b remains unremoved. In the figure, the portion of the deposition film 104b that remains unremoved is indicated by reference numeral 104c. When removing the deposition film 104b, the deposition film is removed, for example, in a vertical direction (for example, from top to bottom of the paper). Therefore, the portion indicated by reference numeral 104c has a length in the removal direction, and therefore a portion of the deposition film remains unremoved. However, in this embodiment, as will be described later, this does not affect other processes, such as the subsequent isotropic etching step and deposition film formation process.
[0047] 1B(f) is a diagram showing the state after the isotropic etching step in the etching process. As shown in the figure, the Si substrate 101 has been removed. The portion of the Si substrate 101 that has been removed here is indicated by reference numeral 105b.
[0048] 1C(g) is a diagram showing the state after the next deposition film forming step, in which a deposition film 104d is formed on the Si substrate 101. In addition to being formed on the resist 103, the deposition film 104d is also formed on the scraped portion (reference numeral 105b) of the Si substrate 101.
[0049] In this deposition film fabrication process, if a deposition film 104d is fabricated on the remaining portion (reference numeral 104c) that was not removed in the previous deposition removal step, the thickness of the remaining portion will be added, increasing the thickness of the deposition film. In this case, the remaining portion (reference numeral 104c) has little effect because the desired portion is removed in the subsequent deposition removal step.
[0050] Then, the next etching step is performed. 1C(h) is a diagram showing the state after the deposition removal step in the etching process. Etching is performed for a predetermined time, and the deposition film 104d is removed. As a result, the portion above the resist 103 and the portion on the bottom surface of the deposition film 104d are mainly removed, leaving the deposition film 104e. As shown in the figure, even if there are areas where the deposition film is thicker, the deposition film is removed in the desired areas.
[0051] 1C(i) is a diagram showing the state after the isotropic etching step in the etching process. As shown in the figure, the Si substrate 101 has been etched away. The etched portions of the Si substrate 101 are indicated by reference numeral 105c. As shown in the figure, at this stage, the Si substrate 101 has been etched away as indicated by reference numerals 105b and 105c.
[0052] As shown in the figure, the sidewalls 105b are protected by the deposition film 104e, and therefore the deposition film may be referred to as a sidewall protection film or the like.
[0053] Thereafter, the deposition film forming process and the etching process are repeated in the same manner as described above to form the nozzle. The number of repetitions is not particularly limited and can be selected appropriately. After repeating the deposition film forming process and the etching process, the deposition film and the resist are removed, for example, by ashing.
[0054] In this way, the Si substrate can be vertically processed. By this process, a nozzle having a cylindrical shape is formed, and the cylindrical sidewall has a periodic uneven shape.
[0055] An example of a nozzle obtained by this embodiment is shown in Figure 2. Shown here are a Si substrate 101, a native oxide film 102, a liquid ejection surface 110, a nozzle 121, and a nozzle plate 131. Although not shown, when the nozzle plate 131 is viewed from above, the nozzle 121 has a circular opening and a cylindrical shape. Furthermore, although not shown here, the nozzle 121 communicates with a liquid chamber (pressurizing chamber).
[0056] In this example, the nozzle has one cylindrical shape, so the nozzle and the cylindrical shape can be said to be the same. Reference numeral 120 indicates the nozzle, and reference numeral 121 indicates the cylindrical shape or the first cylindrical shape. For convenience, the nozzle and the cylindrical shape are collectively referred to as "121 (120)" in the drawings. In the following explanation of this example, the nozzle and the cylindrical shape are collectively referred to as "nozzle 121."
[0057] In the figure, D1 indicates the diameter of the outermost part of the nozzle 121. D2, D4, D6, and D8 indicate the minimum diameter values of the cylindrical shape of the nozzle, and D3, D5, D7, and D9 indicate the maximum diameter values of the cylindrical shape. Dav is a schematic representation of the average value of the minimum and maximum values.
[0058] In this embodiment, the diameter D1 of the outermost part of the nozzle 121 (cylindrical shape on the liquid ejection surface side) is smaller than the average value Dav of the minimum and maximum diameters of the cylindrical shape, as defined below. [Average of the minimum and maximum diameters of the cylindrical shape] Average value = (sum of minimum values + sum of maximum values) / (number of minimum values + number of maximum values)
[0059] Applying the above formula to the example shown in Figure 2, Dav=((D2+D4+D6+D8)+(D3+D5+D7+D9)) / (4+4) The average value may be calculated by first calculating the average value of the minimum values and the average value of the maximum values, then adding these two average values and dividing the sum by 2.
[0060] The "number of minimum values" does not have to be the number of all minimum values in the cylindrical shape, but may be a part of the minimum values in the cylindrical shape, for example, the measured points. Similarly, the "number of maximum values" does not have to be the number of all maximum values in the cylindrical shape.
[0061] As described above, in this embodiment, resist defects can be suppressed by performing the deposition film fabrication process before the first etching process. This improves the uniformity of the diameter of the nozzle at the outermost surface of the nozzle plate. Furthermore, since the native oxide film is removed using excess energy from the first deposition removal process and then the Si is removed by isotropic etching, the shape of the first cycle is also the same across the wafer surface, improving shape uniformity.
[0062] As described above, the diameter of the outermost surface of the nozzle when fabricated in the order of deposition film fabrication process ⇒ etching process ⇒ repeat (this embodiment) is smaller than the diameter of the outermost surface of the nozzle when fabricated in the order of etching process ⇒ deposition film fabrication process ⇒ repeat (the conventional example). The reason for this smaller diameter is that the nozzle was able to be formed into the desired shape, and as a result, the diameter of the outermost surface of the nozzle and the average value have the above-mentioned relationship.
[0063] In a nozzle plate having nozzles in which the diameter of the outermost surface of the nozzle and the average value satisfy the above-mentioned relationship, and in a liquid ejection head having such a nozzle plate, the uniformity of the diameter of the outermost surface of the nozzle can be improved, and the uniformity of the nozzle dimensions can be improved. Therefore, the liquid ejection head of this embodiment can prevent problems such as changes in liquid ejection speed caused by nozzle non-uniformity, and can improve landing accuracy. Furthermore, the liquid ejection head of this embodiment can suppress a decrease in affinity with the ejection waveform, and can suppress the generation of mist.
[0064] The method for measuring the diameter of the outermost part of the nozzle and the minimum and maximum diameters of the cylindrical shape is as follows. The diameter of the outermost surface of the nozzle is obtained by taking an image through a microscope and using an optical automatic measuring instrument that performs dimensional measurement on the taken image through image processing. The minimum and maximum diameter values of the cylindrical shape are obtained by taking an image of the cross section of the nozzle using a scanning electron microscope (SEM) and measuring the diameter of the side wall through SEM observation. The number of measurement points for the minimum and maximum values, i.e., the number of points at which the minimum and maximum values are obtained, is, for example, about 30 points per nozzle (30 minimum values and 30 maximum values).
[0065] In order to ensure that the diameter of the outermost portion of the nozzle and the average value have the above relationship, the deposition film forming step is carried out before the first etching step, as described above.
[0066] Figure 3 shows images of the internal cross section of the nozzle in this example, with (A) an image of the nozzle at the center of the wafer and (B) an image of the nozzle at the periphery of the wafer. Figure 3 is an image taken with an SEM (scanning electron microscope). As can be seen from the images, the cylindrical sidewall of the nozzle has a periodic uneven shape. Furthermore, (A) and (B) have almost the same shape, which, as mentioned above, can improve the uniformity of the nozzle shape within the wafer surface.
[0067] Another example of a nozzle obtained by this embodiment is shown in FIG. In this example, the nozzle 120 has two cylindrical shapes 121 and 122 in the thickness direction of the nozzle plate 131. The cylindrical shape on the liquid ejection surface 110 side is also referred to as the first cylindrical shape 121, and the other cylindrical shape is also referred to as the second cylindrical shape 122.
[0068] In this example, the average values of the two cylindrical shapes 121 and 122 are different from each other, and the average value of the cylindrical shape on the liquid ejection surface side (first cylindrical shape 121) is smaller than the average value of the other cylindrical shape (second cylindrical shape 122). By satisfying the relationship as in this example, the fluid resistance of the nozzle 120 can be reduced, and the degree of freedom in ejection waveform design can be improved.
[0069] To form the nozzle 120 of this example, for example, after forming the first cylindrical shape 121 shown in Figure 2, and before removing the resist 103 and deposition film, a deposition film forming process and an etching process are repeated to form the second cylindrical shape 122. Note that when forming the second cylindrical shape 122, either the deposition film forming process or the etching process may be performed first. As described above, after forming the second cylindrical shape 122, the resist 103 and deposition film are removed by, for example, an ashing process.
[0070] 4 only shows D1 to D3 and Dav, and other minimum and maximum values are not shown. The relationship between the diameter D1 of the outermost part of the nozzle and the average value Dav described above needs to be satisfied in the cylindrical shape on the liquid ejection surface 110 side, i.e., the first cylindrical shape 121, but does not need to be satisfied in the second cylindrical shape 122. The same applies when the nozzle has another cylindrical shape.
[0071] If the nozzle further has another cylindrical shape, for example, if it has a third cylindrical shape on the opposite side of the liquid ejection surface, the average value of the second cylindrical shape is preferably smaller than the average value of the third cylindrical shape, which can reduce the fluid resistance of the nozzle 120.
[0072] Fig. 5 is another diagram for explaining the example shown in Fig. 4. Fig. 5(a) is a diagram showing the state before the liquid 130 (e.g., ink) is filled, and Fig. 5(b) is a diagram showing the state after the liquid 130 is filled and when the liquid 130 is being ejected.
[0073] As for the shape of the nozzle, as in this example, it is preferable that the nozzle has two cylindrical shapes (first cylindrical shape 121 and second cylindrical shape 122) in the thickness direction of the nozzle plate 131. Furthermore, it is preferable that the average value of the first cylindrical shape 121 is smaller than the average value of the second cylindrical shape 122. The smaller the diameter of the outlet of the nozzle 120, the smaller the ink droplets that can be ejected, thereby improving image resolution and enabling the formation of high-quality images.
[0074] On the other hand, if the nozzle volume is small, the fluid resistance increases, reducing the flexibility of discharge control. Therefore, in order to reduce the nozzle outlet diameter and fluid resistance, a two-stage shape like this example is preferable.
[0075] When ink is ejected, as shown in FIG. 5(b), the ink surface is maintained on the small diameter cylindrical portion (first cylindrical shape 121), and the position of the ink surface fluctuates depending on the pressure applied to the ink. In conventional examples, it is not possible to improve the uniformity of the nozzle shape, so even with the same pressure, the position of the ink surface varies from nozzle to nozzle, making it impossible to improve ejection characteristics. On the other hand, according to this embodiment, it is easier to make the position of the ink surface uniform between nozzles, thereby improving ejection characteristics.
[0076] Next, another embodiment of the liquid ejection head of the present invention will be described. 6A is a schematic diagram illustrating the liquid ejection head of this embodiment. In this embodiment, a protective film 140 is formed on the surface of the nozzle plate 131. The formation of the protective film 140 can prevent Si from the Si substrate 101 from dissolving into the ink. In particular, the formation of the protective film 140 inside the nozzle 120 can further prevent Si from the Si substrate 101 from dissolving into the ink.
[0077] There are no particular limitations on the material or manufacturing method of the protective film 140, and they can be selected appropriately. The protective film 140 in this embodiment may be called an ink-resistant protective film.
[0078] If the protective film 140 is formed, it is determined whether the diameter of the outermost part of the nozzle including the protective film 140 and the average value satisfy the above relationship. For example, when determining the minimum and maximum values of the diameter of the outermost part of the nozzle and the diameter of the cylindrical shape, the distance from the surface of the protective film 140 is determined.
[0079] Next, another embodiment of the liquid ejection head of the present invention will be described. 6B is a schematic diagram illustrating the liquid ejection head of this embodiment. In this embodiment, a water-repellent film 141 is formed on the protective film 140 of the liquid ejection surface 110. The formation of the water-repellent film 141 ensures the cleanliness of the nozzle surface, and further suppresses the bending of ejected droplets.
[0080] The material and manufacturing method of the water-repellent film 141 are not particularly limited and can be selected appropriately.
[0081] If the water-repellent film 141 is formed, it is determined whether the diameter of the outermost part of the nozzle, including the water-repellent film 141, and the average value satisfy the above relationship. For example, when determining the diameter of the outermost part of the nozzle, the distance from the surface of the water-repellent film 141 is determined.
[0082] Next, another embodiment of the liquid ejection head of the present invention will be described. In this embodiment, the nozzle plate has a substrate on which one of the cylindrical shapes is formed and a substrate on which another of the cylindrical shapes is formed, and the substrate on which the one cylindrical shape is formed and the substrate on which the other cylindrical shape is formed have different etching selectivity ratios for dry etching of silicon.
[0083] This embodiment will be described with reference to Fig. 7. Fig. 7A and Fig. 7B are diagrams for explaining the process of manufacturing the liquid ejection head of this embodiment, and Fig. 7C is a diagram showing the liquid ejection head of this embodiment.
[0084] 7A is a diagram showing a state in which the first cylindrical shape 121 of the example shown in FIG. 2 has been formed. In this embodiment, the first cylindrical shape 121 is formed on the first Si substrate 101a, and the second cylindrical shape 122 is formed on the second Si substrate 101b. The nozzle plate 131 in this embodiment has the first Si substrate 101a and the second Si substrate 101b.
[0085] In this embodiment, the first Si substrate 101a and the second Si substrate 101b have different etching selectivity ratios for dry etching of silicon. For example, the second Si substrate 101b uses a layer with a high etching selectivity ratio for dry etching of silicon.
[0086] As shown in Figure 7A, in the etching process for forming the first cylindrical shape 121, when the second Si substrate 101b is reached, the etching rate changes, making it difficult to etch. This allows the height of the first cylindrical shape 121 to be controlled with high precision, making it easier to form the desired shape. Note that although the etching selectivity is used in the explanation here, the second Si substrate 101b may be a layer that is less easily etched than the first Si substrate 101a.
[0087] Next, as shown in Fig. 7B, the etching process and the deposition film forming process are repeated in the same manner as described above to form a second cylindrical shape 122. Fig. 7B is a diagram showing the state after the second cylindrical shape 122 has been formed, and is a diagram showing the state after the resist and deposition film have been removed.
[0088] Next, as shown in FIG. 7C, the resist 103 and the deposition film are removed, and the nozzle plate 131 of this embodiment is obtained.
[0089] In this embodiment, by making the etching selectivity different between the first Si substrate 101a and the second Si substrate 101b, the nozzle shape can be controlled with high precision. Furthermore, since the nozzle shape can be controlled with high precision, discharge control can be improved. According to this embodiment, the height of the first cylindrical shape 121 can be made uniform between the nozzles, and the liquid surface position (see FIG. 5) can be made uniform between the nozzles. This makes it easier to make the liquid surface position for a certain pressure the same between the nozzles. Furthermore, it is possible to prevent problems such as an increase in fluid resistance due to the first cylindrical shape 121 being too large.
[0090] The first Si substrate 101a is preferably used as an active layer in SOI, which will be described later, and the second Si substrate 101b is preferably used as a box layer in SOI, which will be described later.
[0091] Next, another embodiment of the liquid ejection head and the method for manufacturing the liquid ejection head according to the present invention will be described with reference to Fig. 8. Here, the formation of the liquid chamber will also be described.
[0092] In this embodiment, SOI (Silicon on Insulator) is used as the Si substrate. SOI has a structure in which a box layer (SiO2) is sandwiched between an active layer (Si) and a Si substrate, and is generally used in the manufacture of LSIs. By using SOI in this embodiment, it is possible to improve the controllability of the inkjet ejection speed. In addition, because SOI wafers are manufactured by oxidizing the surface of a Si substrate and attaching a Si substrate to one side of the oxidized surface, the variation in thickness can be suppressed to a few hundred nanometers.
[0093] 8A(a) is a diagram showing the SOI used in this embodiment. A box layer 302 (SiO2) is formed on a Si substrate 301, and an active layer 303 (Si) is formed on the box layer 302. The surface layer (native oxide film) is not shown here.
[0094] Next, as shown in FIG. 8A(b), a first resist pattern 304 is formed on the active layer 303.
[0095] Next, as shown in FIG. 8A(c), a first cylindrical shape 121 is formed by dry etching. As described above, the first cylindrical shape 121 is formed by the deposition film forming process and the etching process. As in the above embodiment, the deposition film forming process is performed before the first etching process. Note that the periodic uneven shape is not shown here.
[0096] The reason for processing with the resist pattern attached is to prevent damage to the edge during dry etching. If the edge is deformed by etching damage, the ink ejection direction will bend from the deformed point.
[0097] Next, as shown in FIG. 8B(d), a second cylindrical shape 122 is formed. The formation method can be the same as that of the above embodiment. The second cylindrical shape 122 is formed by a deposition film formation process and an etching process using, for example, dry etching. As shown in the figure, the first cylindrical shape 121 is formed in the active layer 303, and the second cylindrical shape 122 is formed in the box layer 302. The first cylindrical shape may be referred to as a first nozzle hole, and the second cylindrical shape may be referred to as a second nozzle hole.
[0098] 8B(e), the first resist pattern 304 is removed. The timing for removing the first resist pattern 304 may be changed as appropriate as long as it is after the second cylindrical shape 122 is formed.
[0099] Next, as shown in FIG. 8B(f), a second resist pattern 305 is formed on the Si substrate 301.
[0100] Next, as shown in FIG. 8C(g), a liquid chamber 306 (also referred to as a pressure chamber, a flow path liquid chamber, etc.) is formed by dry etching.
[0101] Next, as shown in Figure 8C(h), the second resist pattern 305 is removed. This allows the nozzle plate 131 having the nozzles of this embodiment to be formed. The liquid ejection head of this embodiment has the nozzle plate 131 and a liquid chamber substrate 132. The liquid chamber substrate 132 has a liquid chamber 306, and may also be called a liquid chamber plate, a flow path substrate, etc. However, the nozzle plate may also have a liquid chamber, in which case the substrate having the reference numerals 131 and 132 corresponds to the nozzle plate.
[0102] In this embodiment, the nozzle has a two-stage cylindrical shape perpendicular to the substrate, similar to the example shown in Fig. 4. That is, the nozzle has a first cylindrical shape 121 and a second cylindrical shape 122. Furthermore, the average value of the first cylindrical shape 121 is smaller than the average value of the second cylindrical shape 122. This allows the nozzle outlet diameter to be small, enabling the ejection of minute ink droplets, improving image resolution and forming high-quality images. It also reduces fluid resistance.
[0103] Furthermore, in this embodiment, by using SOI, the height of the first cylindrical shape 121 can be controlled with high precision. This is because the etching selectivity of the active layer 303 and the box layer 302 for dry etching of silicon is different. In this embodiment, it is possible to prevent the active layer 303 from being removed too much, which causes the height of the first cylindrical shape 121 to vary.
[0104] (Liquid ejection device and liquid ejection unit) Next, an example of a liquid ejection device according to the present invention will be described with reference to Figures 9 and 10. Figure 9 is an explanatory plan view of the main parts of the device, and Figure 10 is an explanatory side view of the main parts of the device.
[0105] This device is a serial type device, and a carriage 403 is moved back and forth in the main scanning direction by a main scanning movement mechanism 493. The main scanning movement mechanism 493 includes a guide member 401, a main scanning motor 405, a timing belt 408, etc. The guide member 401 is hung between left and right side plates 491A and 491B, and movably holds the carriage 403. The main scanning motor 405 then moves the carriage 403 back and forth in the main scanning direction via a timing belt 408 hung between a drive pulley 406 and a driven pulley 407.
[0106] This carriage 403 is equipped with a liquid ejection unit 440 that integrates a liquid ejection head 404 according to the present invention and a head tank 441. The liquid ejection head 404 of the liquid ejection unit 440 ejects liquid of each color, for example, yellow (Y), cyan (C), magenta (M), and black (K). The liquid ejection head 404 is mounted with a nozzle row made up of multiple nozzles arranged in a sub-scanning direction perpendicular to the main scanning direction, and the ejection direction facing downward.
[0107] The liquid stored in the liquid cartridge 450 is supplied to the head tank 441 by a supply mechanism 494 for supplying the liquid stored outside the liquid ejection head 404 to the liquid ejection head 404 .
[0108] The supply mechanism 494 is composed of a cartridge holder 451 which is a filling section to which the liquid cartridge 450 is attached, a tube 456, a liquid delivery unit 452 including a liquid delivery pump, etc. The liquid cartridge 450 is detachably attached to the cartridge holder 451. The liquid is delivered from the liquid cartridge 450 to the head tank 441 by the liquid delivery unit 452 via the tube 456.
[0109] This device is provided with a transport mechanism 495 for transporting paper 410. The transport mechanism 495 includes a transport belt 412, which is a transport means, and a sub-scanning motor 416 for driving the transport belt 412.
[0110] The conveyor belt 412 attracts the paper 410 and conveys it at a position facing the liquid ejection head 404. The conveyor belt 412 is an endless belt that is stretched between a conveyor roller 413 and a tension roller 414. The paper can be attracted by electrostatic attraction or air suction.
[0111] The conveyor belt 412 moves in a circular motion in the sub-scanning direction when the conveyor roller 413 is rotationally driven by a sub-scanning motor 416 via a timing belt 417 and a timing pulley 418 .
[0112] Furthermore, a maintenance and recovery mechanism 420 for performing maintenance and recovery of the liquid ejection head 404 is disposed on one side of the conveyor belt 412 on one side of the carriage 403 in the main scanning direction.
[0113] The maintenance and recovery mechanism 420 is made up of, for example, a cap member 421 that caps the nozzle surface (the surface on which the nozzles are formed) of the liquid ejection head 404, a wiper member 422 that wipes the nozzle surface, and the like.
[0114] The main scanning movement mechanism 493, the supply mechanism 494, the maintenance and recovery mechanism 420, and the transport mechanism 495 are attached to a housing including side plates 491A and 491B and a back plate 491C.
[0115] In this device configured as described above, a sheet of paper 410 is fed onto and attracted to the conveyor belt 412, and the sheet of paper 410 is conveyed in the sub-scanning direction by the circular movement of the conveyor belt 412.
[0116] Therefore, by driving the liquid ejection head 404 in accordance with an image signal while moving the carriage 403 in the main scanning direction, liquid is ejected onto the stationary paper 410 to form an image.
[0117] As described above, this device is equipped with the liquid ejection head according to the present invention, and therefore can stably form high-quality images.
[0118] Next, another example of a liquid discharge unit according to the present invention will be described with reference to Fig. 11. Fig. 11 is an explanatory plan view of the main part of the unit.
[0119] This liquid ejection unit is composed of the components that make up the device for ejecting the liquid, including a housing portion consisting of side plates 491A, 491B and a back plate 491C, a main scanning movement mechanism 493, a carriage 403, and a liquid ejection head 404.
[0120] It is also possible to configure a liquid discharge unit in which at least one of the maintenance and recovery mechanism 420 and the supply mechanism 494 described above is further attached to, for example, the side plate 491B of this liquid discharge unit.
[0121] Next, still another example of a liquid discharge unit according to the present invention will be described with reference to Fig. 12. Fig. 12 is an explanatory front view of the unit.
[0122] This liquid ejection unit is composed of a liquid ejection head 404 to which a flow path part 444 is attached, and a tube 456 connected to the flow path part 444 .
[0123] The flow path part 444 is disposed inside the cover 442. A head tank 441 may be included instead of the flow path part 444. A connector 443 for electrically connecting the flow path part 444 to the liquid ejection head 404 is provided on the upper part of the flow path part 444.
[0124] In this application, a "liquid ejecting device" is a device that includes a liquid ejection head or a liquid ejection unit and ejects liquid by driving the liquid ejection head. Liquid ejecting devices include not only devices that can eject liquid onto objects to which the liquid can adhere, but also devices that eject liquid into air or liquid.
[0125] This "liquid ejecting device" can also include means for feeding, transporting, and discharging items onto which liquid can be attached, as well as pre-processing devices and post-processing devices.
[0126] For example, examples of "liquid ejecting devices" include image forming devices that eject ink to form images on paper, and three-dimensional modeling devices (three-dimensional modeling devices) that eject modeling liquid onto a powder layer formed from layers of powder in order to create a three-dimensional object (a three-dimensional model).
[0127] Furthermore, the term "liquid ejection device" is not limited to devices that use ejected liquid to visualize meaningful images such as letters and figures. For example, it also includes devices that form patterns that have no meaning in themselves, and devices that create three-dimensional images.
[0128] The above-mentioned "object onto which a liquid can adhere" means an object onto which a liquid can adhere at least temporarily, an object onto which the liquid can adhere and stick, an object onto which the liquid can penetrate, etc. Specific examples include media such as paper, recording paper, film, and cloth, electronic circuit boards, electronic components such as piezoelectric elements, powder layers, organ models, and test cells, and unless otherwise specified, includes all objects onto which a liquid can adhere.
[0129] The material of the above-mentioned "object to which a liquid can adhere" may be any material to which a liquid can adhere, even temporarily, such as paper, thread, fiber, fabric, leather, metal, plastic, glass, wood, ceramics, building materials such as wallpaper and flooring, and textiles for clothing.
[0130] "Liquid" also includes ink, processing liquid, DNA sample, resist, pattern material, binder, modeling liquid, or solutions and dispersions containing amino acids, proteins, calcium, and the like.
[0131] Furthermore, the "liquid ejection device" may be a device in which a liquid ejection head and an object onto which liquid can be attached move relatively, but is not limited to this. Specific examples include a serial type device in which a liquid ejection head moves, and a line type device in which a liquid ejection head does not move.
[0132] Other examples of "liquid ejecting devices" include a treatment liquid application device that ejects a treatment liquid onto paper to apply the treatment liquid to the surface of the paper for purposes such as modifying the surface of the paper, and an injection granulation device that ejects a composition liquid in which raw materials are dispersed through a nozzle to granulate fine particles of the raw materials.
[0133] A "liquid ejection unit" is a collection of components related to the ejection of liquid, integrating functional parts and mechanisms with a liquid ejection head. For example, a "liquid ejection unit" includes a combination of a liquid ejection head and at least one of the following components: a head tank, a carriage, a supply mechanism, a maintenance and recovery mechanism, and a main scanning movement mechanism.
[0134] Here, "integrated" includes, for example, a liquid ejection head and a functional part or mechanism that are fixed to each other by fastening, bonding, engaging, etc., or one that is held movably relative to the other. The liquid ejection head, functional part, or mechanism may also be configured to be detachable from each other.
[0135] For example, some liquid ejection units have a liquid ejection head and a head tank integrated together, such as liquid ejection unit 440 shown in Fig. 10. Other liquid ejection units have a liquid ejection head and a head tank integrated together by being connected to each other by a tube or the like. Here, a unit including a filter can be added between the head tank and the liquid ejection head of these liquid ejection units.
[0136] Furthermore, there is a liquid ejection unit in which the liquid ejection head and the carriage are integrated.
[0137] In some liquid ejection units, the liquid ejection head is movably held by a guide member that constitutes part of the scanning movement mechanism, and the liquid ejection head and the scanning movement mechanism are integrated together. In other liquid ejection units, as shown in Figure 11, the liquid ejection head, carriage, and main scanning movement mechanism are integrated together.
[0138] Furthermore, there is a liquid ejection unit in which a cap member, which is part of the maintenance and recovery mechanism, is fixed to a carriage on which a liquid ejection head is attached, thereby integrating the liquid ejection head, carriage, and maintenance and recovery mechanism.
[0139] As shown in FIG. 12, there is also a liquid ejection unit in which a tube is connected to a liquid ejection head to which a head tank or flow path components are attached, and the liquid ejection head and a supply mechanism are integrated.
[0140] The main scanning movement mechanism includes the guide member alone, and the supply mechanism includes the tube alone and the loading unit alone.
[0141] Furthermore, the pressure generating means used in the "liquid ejection head" is not limited. For example, in addition to the piezoelectric actuator (which may use a laminated piezoelectric element) as described in the above embodiment, a thermal actuator using an electrothermal conversion element such as a heating resistor, or an electrostatic actuator consisting of a vibration plate and an opposing electrode may also be used.
[0142] In addition, in the present application, the terms image formation, recording, printing, copying, printing, modeling, etc. are all synonymous. [Example]
[0143] The present invention will be explained in more detail below by showing examples, but the present invention is not limited to these examples.
[0144] (Example 1 and Comparative Example 1) In Example 1, a liquid ejection head was fabricated using SOI as shown in Figures 8A to 8C. In Example 1, a deposition film fabrication step was performed before the first etching step (see Figure 1A). In addition, a nozzle having two cylindrical shapes was formed.
[0145] In Comparative Example 1, the device was fabricated using SOI in the same manner as in Example 1, but the first etching step was carried out before the deposition film fabrication step (see FIG. 13A).
[0146] Next, the liquid ejection head obtained as described above was evaluated as follows. For each of the above liquid ejection heads, the diameter of the outermost nozzle surface was determined for 20,000 nozzles, and the diameter distribution was calculated from this, and the standard deviation 3σ was calculated and evaluated. The smaller the standard deviation 3σ value, the higher the uniformity of the diameter of the outermost nozzle surface. The evaluation standard was a 3σ value of less than 0.1 μm.
[0147] The diameter of the outermost part of the nozzle was optically measured using a Nikon Instech optical length measuring machine NEXIV. Conditions were used that resulted in a dimensional measurement error of 0.02 μm. The diameter of the outermost part of the nozzle was determined using an optical automatic measuring instrument that captured an image of the outermost part of the nozzle and performed dimensional measurements on this image using image processing. The minimum and maximum diameter values of the cylindrical shape were determined by taking an SEM image of the cross section of the nozzle and measuring the diameter of the side wall through SEM observation. The number of measurement points for the minimum and maximum values, i.e., the number of points for which the minimum and maximum values were determined, was 30 per nozzle.
[0148] Table 1 shows the measurement and evaluation results. Table 1 shows the diameter of the nozzle's outermost part, the average cylindrical diameter, the average maximum cylindrical diameter, and the average minimum cylindrical diameter for one nozzle located at the center of the wafer and one nozzle located at the periphery of the wafer. In Table 1, the average cylindrical diameter is calculated by adding the average maximum cylindrical diameter and the average minimum cylindrical diameter and dividing the result by 2.
[0149] As shown in Table 1, in Example 1, the diameter of the nozzle's outermost surface was smaller than the average of the maximum and minimum diameter values of the cylindrical shape for both the nozzle at the wafer center and the nozzle at the wafer periphery. The measurements shown in Table 1 are for one nozzle at the wafer center and one nozzle at the wafer periphery, but in Example 1, the diameter of the nozzle's outermost surface was also smaller than the average of the maximum and minimum diameter values of the cylindrical shape for the other nozzles as well. On the other hand, in Comparative Example 1, the diameter of the outermost nozzle surface was larger than the average value of the maximum and minimum diameters of the cylindrical shape for both the nozzles at the center of the wafer and the nozzles at the periphery of the wafer. Similarly, in Comparative Example 1, the diameter of the outermost nozzle surface was larger than the average value of the maximum and minimum diameters of the cylindrical shape for the other nozzles. The cylindrical side wall in both Example 1 and Comparative Example 1 had a periodic uneven shape as shown in FIG.
[0150] Furthermore, as shown in Table 1, in Example 1, the standard deviation 3σ obtained from the diameter distribution of the outermost part of the nozzle was 0.085 μm, which was below the reference value of 0.1 μm. Therefore, it can be said that the uniformity of the diameter of the outermost part of the nozzle is high in Example 1. On the other hand, in Comparative Example 1, the standard deviation 3σ was 0.142 μm, which exceeded the reference value of 0.1 μm. Therefore, it can be said that in Comparative Example 1, the uniformity of the diameter of the outermost surface of the nozzle was low. In this way, by making the diameter of the outermost nozzle surface smaller than the average value of the maximum and minimum diameters of the cylindrical shape, the uniformity of the diameter of the outermost nozzle surface within the wafer surface or on the nozzle plate can be improved.
[0151] [Table 1] [Explanation of symbols]
[0152] 101 Si substrate 102 Native oxide film 103 Resist 104 Deposition Film 105 Shaved Part 110 Liquid discharge surface 121 First cylindrical shape 122 Second cylindrical shape 130 liquid 131 Nozzle plate 132 Liquid chamber substrate 140 Protective film 141 Water-repellent film [Prior art documents] [Patent documents]
[0153] [Patent Document 1] Japanese Patent Application Publication No. 2018-051833
Claims
1. A liquid ejection head including a nozzle plate having nozzles, the nozzle has two or more cylindrical nozzles with periodic concave and convex shapes formed on the side walls thereof in the thickness direction of the nozzle plate, In the cylindrical shape on the liquid ejection surface side, the diameter of the outermost part of the nozzle is smaller than the average value of the minimum and maximum diameters of the cylindrical shape defined below, the average values in at least two of the cylindrical shapes are different from each other, and the average value in the cylindrical shape on the liquid ejection surface side is smaller than the average value in the other cylindrical shape; The liquid ejection head is characterized in that the layer on which the one cylindrical shape is formed and the layer on which the other cylindrical shape is formed have different etching selectivity ratios with respect to dry etching of silicon. [Average value of minimum and maximum diameter of cylindrical shape] Average value = (total of minimum values + total of maximum values) / (number of minimum values + number of maximum values)
2. The nozzle has two cylindrical shapes whose average values are different from each other in the thickness direction of the nozzle plate, the nozzle plate has a substrate on which one of the cylindrical shapes is formed and a substrate on which another of the cylindrical shapes is formed, and the layer on which the one of the cylindrical shapes is formed and the layer on which the other of the cylindrical shapes is formed are different substrates; 2. The liquid ejection head according to claim 1, wherein the substrate on which the one cylindrical shape is formed and the substrate on which the other cylindrical shape is formed have different etching selectivity ratios for dry etching of silicon.
3. 3. The liquid ejection head according to claim 1, wherein a protective film is formed on the surface of the nozzle plate.
4. 4. The liquid ejection head according to claim 3, wherein a water-repellent film is formed on the protective film on the liquid ejection surface.
5. A liquid ejection unit comprising the liquid ejection head according to any one of claims 1 to 4.
6. The liquid ejection unit described in claim 5, characterized in that the liquid ejection head is integrated with at least one of a head tank that stores liquid to be supplied to the liquid ejection head, a carriage that mounts the liquid ejection head, a supply mechanism that supplies liquid to the liquid ejection head, a maintenance and recovery mechanism that maintains and recovers the liquid ejection head, and a main scanning movement mechanism that moves the liquid ejection head in the main scanning direction.
7. 7. A liquid ejection device comprising the liquid ejection head according to claim 1, or the liquid ejection unit according to claim 5 or 6.
8. A method for manufacturing a liquid ejection head provided with a nozzle plate having nozzles, comprising: The nozzle plate is produced using a Bosch process including an etching step of etching the substrate and / or the deposition film, and a deposition film production step of producing a deposition film that protects the substrate; The deposition film forming step is performed before the first etching step is performed, the nozzle has one or more cylindrical shapes with periodic concave and convex shapes formed on the side walls in the thickness direction of the nozzle plate, A method for manufacturing a liquid ejection head, characterized in that the diameter of the outermost part of the nozzle in the cylindrical shape on the liquid ejection surface side is smaller than the average value of the minimum and maximum diameters of the cylindrical shape defined below. [Average value of minimum and maximum diameter of cylindrical shape] Average value = (total of minimum values + total of maximum values) / (number of minimum values + number of maximum values)
Citation Information
Patent Citations
Nozzle plate, method of manufacturing nozzle plate, and inkjet head
JP2013111927A
Holding structure of wiring member, liquid discharge head and liquid discharge device
JP2016092400A
Nozzle substrate, ink jet print head and method for manufacturing nozzle substrate
JP2018051833A
Method for manufacturing liquid ejection head nozzle plate, liquid ejection head nozzle plate and liquid ejection head
WO2008155986A1
Inkjet head, inkjet recording device and method for producing inkjet head
WO2019012828A1