Gas rectifying member for the underside of the substrate

Abstract

To describe a substrate processing device capable of enhancing an in-surface uniformity of an etching processing.SOLUTION: A substrate processing device comprises: a support part supporting a substrate; a base member that faces a lower surface of the substrate while being separated; a rotation part that rotates the base member and the support part; a gas supply part; and a gas rectification part that rectifies a gas supplied from the gas supply part. The gas rectification part contains: a rod-like member containing a tip end part facing the lower surface of the substrate; and a rectification member arranged so as to surround the tip end part. The tip end part contains a folding part that is provided to an outer peripheral surface so as to be extended downward after it is projected to an outside from the outer peripheral surface of the tip end part. The rectification member contains: a bottom wall part in which an inner peripheral edge is arranged so as to be separated from the outer peripheral surface of the tip end part; a projection part that is extended upward from an inner peripheral part of the bottom wall part so that the tip end part is positioned between the folding part and the outer peripheral surface of the tip end part; a horizontal rectification part that is extended along a horizontal direction in a state of being separated from the bottom wall part; and a plurality of column parts that connect the horizontal rectification part and the bottom wall part.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a computer-readable recording medium. [Background technology]

[0002] Patent Document 1 discloses a substrate processing apparatus that performs cleaning and drying processes on the underside of a substrate held by a substrate holding means while rotating the substrate about a vertical axis. The apparatus includes a base member that faces the underside of the substrate held by the substrate holding means, a gas outlet that ejects gas into the space between the base member and the underside of the substrate, and a blocking member that covers the gas outlet. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 10-135178 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure describes a substrate processing apparatus, a substrate processing method, and a computer-readable recording medium that are capable of improving the in-plane uniformity of etching processing. [Means for solving the problem]

[0005]

[0003] An example of a substrate processing apparatus includes a support unit configured to support a substrate, a base member configured to face the underside of the substrate supported by the support unit while being spaced apart from the substrate, the base member having a through hole, a rotation unit configured to rotate the base member and the support unit, a chemical solution supply unit configured to supply an etching solution to the upper surface of the substrate supported by the support unit, a gas supply unit, and a gas rectification unit configured to rectify the gas supplied from the gas supply unit and discharge the rectified gas into a space between the underside of the substrate supported by the support unit and the base member. The gas rectification unit includes a rod-shaped member extending in the vertical direction, including a tip portion facing the underside of the substrate supported by the support unit and located within the through hole, and an annular rectification member arranged to surround the tip portion. The tip portion includes an annular folded portion provided on the outer circumferential surface of the tip portion so as to protrude outward from the outer circumferential surface of the tip portion and then extend downward. The straightening member includes an annular bottom wall portion whose inner peripheral edge is positioned so as to be spaced apart from the outer peripheral surface of the tip portion; an annular protrusion portion extending upward from the inner peripheral portion of the bottom wall portion so that the tip portion is located between the folded portion and the outer peripheral surface of the tip portion; an annular horizontal straightening portion extending horizontally outward from the folded portion and above the bottom wall portion while being spaced apart from the bottom wall portion; and a plurality of pillar portions connecting the horizontal straightening portion and the bottom wall portion and aligned circumferentially of the tip portion. [Effects of the Invention]

[0006] According to the substrate processing apparatus, substrate processing method, and computer-readable recording medium of the present disclosure, it is possible to improve the in-plane uniformity of the etching process. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram schematically illustrating an example of a substrate processing apparatus. [Figure 2] FIG. 2 is an enlarged cross-sectional view showing the vicinity of an example of a gas rectifying section. [Figure 3] FIG. 3 is a cross-sectional view showing an example of the rectifying member taken along line III-III in FIG. [Figure 4]FIG. 4 is a block diagram showing an example of a main part of a substrate processing apparatus. [Figure 5] FIG. 5 is a schematic diagram illustrating an example of a hardware configuration of the controller. [Figure 6] FIG. 6 is a flowchart illustrating an example of substrate processing. [Figure 7] FIG. 7 is a cross-sectional view showing another example of the rectifying member taken along a horizontal plane. [Figure 8] FIG. 8 is an enlarged cross-sectional view showing the vicinity of another example of the gas rectifying section. DETAILED DESCRIPTION OF THE INVENTION

[0008] In the following description, the same elements or elements having the same functions will be designated by the same reference numerals, and redundant explanations will be omitted. Note that in this specification, when referring to the top, bottom, right, and left of a figure, the directions of the reference numerals in the figure will be used as the reference.

[0009] [Substrate processing equipment] 1 to 3, an example of the configuration of a substrate processing apparatus 1 will be described. The substrate processing apparatus 1 is configured to, for example, supply a processing liquid L to the upper surface Wa of the substrate W to perform an etching process on a film F formed on the upper surface Wa of the substrate W. The film F may be composed of a metal film such as titanium nitride, titanium oxide, titanium, tungsten, tantalum, tantalum nitride, aluminum, aluminum oxide, copper, ruthenium, zirconium oxide, or hafnium oxide.

[0010] The substrate W may be disk-shaped or may be a non-circular plate-shaped such as a polygon. The substrate W may have a cutout portion cut out of a portion. The cutout portion may be, for example, a notch (a U-shaped, V-shaped groove, or the like) or a linear portion extending linearly (so-called orientation flat). The substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or any other type of substrate. The diameter of the substrate W may be, for example, approximately 200 mm to 450 mm.

[0011] As shown in FIG. 1, the substrate processing apparatus 1 includes a spin holder 10, a gas rectifier 20, a chemical liquid supply unit 30, a rinse liquid supply unit 40, a gas supply unit 50, and a controller Ctr (control unit).

[0012] The rotary holder 10 includes a rotary shaft 11 (rotating portion), a drive mechanism 12 (rotating portion), a base member 13, a plurality of support pins 14 (supporting portions), and a plurality of gripping mechanisms 15 (supporting portions). The rotary shaft 11 is a hollow tubular member extending along the vertical direction. The rotary shaft 11 is configured to be rotatable around a central axis Ax. The drive mechanism 12 is connected to the rotary shaft 11. The drive mechanism 12 is configured to operate based on an operation signal from a controller Ctr and rotate the rotary shaft 11. The drive mechanism 12 may be a power source such as an electric motor.

[0013] The base member 13 is, for example, a flat plate having an annular shape and extends horizontally. That is, a through-hole 13a is formed in the center of the base member 13. The inner periphery of the base member 13 is connected to the tip end of the rotating shaft 11. Therefore, the base member 13 is configured to rotate around the central axis Ax of the rotating shaft 11 in conjunction with the rotation of the rotating shaft 11.

[0014] The plurality of support pins 14 are provided on the base member 13 so as to protrude upward from the upper surface of the base member 13. The number of the plurality of support pins 14 may be, for example, about 3 to 6. The plurality of support pins 14 are configured to support the substrate W substantially horizontally by abutting their tips against the underside Wb of the substrate W. The plurality of support pins 14 may have, for example, a cylindrical shape or a frustum shape. The plurality of support pins 14 may be arranged at substantially equal intervals near the outer periphery of the base member 13 so as to form a circular shape as a whole when viewed from above.

[0015] The multiple gripping mechanisms 15 are provided on the base member 13 so as to protrude upward from the base member 13. The number of the multiple gripping mechanisms 15 may be, for example, about three. The multiple gripping mechanisms 15 are so-called mechanical chucks and are configured to be able to grip the peripheral edge of the substrate W. The multiple gripping mechanisms 15 may be arranged at approximately equal intervals near the outer periphery of the base member 13 so as to form a circular shape as a whole when viewed from above.

[0016] When the substrate W is supported by the support pins 14 and the gripping mechanism 15, the substrate W is held above the base member 13 while being spaced apart from the base member 13. In other words, when the substrate W is supported by the support pins 14 and the gripping mechanism 15, the lower surface Wb of the substrate W faces the base member 13.

[0017] As described above, the plurality of support pins 14 and the plurality of gripping mechanisms 15 are provided on the base member 13, and the base member 13 is connected to the rotating shaft 11. Therefore, when the drive mechanism 12 drives the rotating shaft 11 to rotate, the base member 13, the plurality of support pins 14, and the plurality of gripping mechanisms 15 rotate. Therefore, when the drive mechanism 12 drives the rotating shaft 11 to rotate while the substrate W is supported by the plurality of support pins 14 and gripped by the plurality of gripping mechanisms 15, the substrate W also rotates together with the base member 13, etc.

[0018] The gas rectification unit 20 is configured to rectify the gas supplied from the gas supply unit 50 and discharge the rectified gas into the space V between the lower surface Wb of the substrate W supported by the support pins 14 and the gripping mechanism 15 and the base member 13. As shown in FIGS. 1 and 2, the gas rectification unit 20 includes a rod-shaped member 100 and a rectification member 200.

[0019] The rod-shaped member 100 extends in the up-down direction (vertical direction) within the rotation shaft 11 and the through-hole 13a while being spaced apart from the rotation shaft 11 and the through-hole 13a. Therefore, as illustrated in detail in FIG. 2, a gap D is formed between the outer circumferential surface of the rod-shaped member 100 and the inner circumferential surface of the rotation shaft 11. The rod-shaped member 100 may have, for example, a columnar or cylindrical shape. When the rod-shaped member 100 has a cylindrical shape, a rinse liquid, a gas, or the like may be supplied from the rod-shaped member 100 toward the lower surface Wb of the substrate W.

[0020] The rod-shaped member 100 includes a tip portion 101 that faces the lower surface Wb of the substrate W supported by the support pins 14 and the gripping mechanism 15 and is disposed within the through-hole 13a. The upper end of the tip portion 101 may be located above the base member 13. The tip portion 101 has an annular (for example, circular) folded portion 102 on its outer circumferential surface.

[0021] The folded portion 102 protrudes outward from the outer circumferential surface of the tip portion 101 and then extends downward. Therefore, the cross section of the folded portion 102 is approximately J-shaped. The combination of the tip portion 101 and the folded portion 102 forms an annular recess with a bottom that is closed at the top and open at the bottom.

[0022] The flow rectifying member 200 has an annular (for example, circular) shape as a whole, and is disposed so as to surround the tip portion 101. In the example of FIG. 2, the flow rectifying member 200 is a separate member from the rod-shaped member 100 (tip portion 101). As illustrated in FIGS. 2 and 3, the flow rectifying member 200 includes a bottom wall portion 201, a protruding portion 202, a horizontal flow rectifying portion 203, and a plurality of pillar portions 204.

[0023] The bottom wall portion 201 is a plate-like body extending horizontally and has an annular (for example, circular) shape with a through-hole provided in the center. The inner peripheral edge of the bottom wall portion 201 is spaced apart from the outer peripheral surface of the tip portion 101. The outer peripheral edge of the bottom wall portion 201 is attached to the through-hole 13a of the base member 13. Therefore, the bottom wall portion 201 is disposed between the tip portion 101 and the base member 13.

[0024] The protruding portion 202 is a tubular body extending upward from the inner periphery (near the inner periphery) of the bottom wall portion 201. Therefore, the protruding portion 202 has an annular (e.g., cylindrical) shape. The tip portion (upper end portion) of the protruding portion 202 is located in the space (bottomed recess) between the outer periphery of the tip portion 101 and the inner periphery of the folded portion 102. Therefore, the tip portion 101, the folded portion 102, the bottom wall portion 201, and the protruding portion 202 form a flow path FL that communicates with the gap D. The flow path FL extends upward from the gap D (see arrow Ar1 in FIG. 2), then turns around approximately 180° and heads downward (see arrow Ar2 in FIG. 2), and then changes course by approximately 90° toward the gap between the bottom wall portion 201 and the folded portion 102 (see arrow Ar3 in FIG. 2).

[0025] The horizontal rectifier 203 is a plate-like body extending horizontally above the bottom wall 201 while being spaced apart from the bottom wall 201, and has an annular (e.g., circular) shape with a through-hole provided in the center. The horizontal rectifier 203 is located outward of the turning portion 102 in the horizontal direction. Therefore, an annular opening OP that is open upward is formed between the horizontal rectifier 203 and the turning portion 102. Therefore, a portion of the gas discharged from the flow path FL (see arrow Ar3 in FIG. 2) forms a vortex at this opening OP (see arrow Ar4 in FIG. 2). The distance between the horizontal rectifier 203 and the turning portion 102 may be, for example, approximately 2 mm to 10 mm, or approximately 4 mm to 8 mm.

[0026] The plurality of pillars 204 extend in the up-down direction (vertical direction) so as to connect the bottom wall 201 and the horizontal rectification unit 203. The number of pillars 204 may be, for example, approximately 3 to 12. The plurality of pillars 204 may be arranged along the circumferential direction of the tip portion 101. In this case, a plurality of through-holes 204a are formed surrounded by the bottom wall 201, the horizontal rectification unit 203, and the plurality of pillars 204. Another portion (a portion not forming a vortex) of the gas discharged from the flow path FL (see arrow Ar3 in FIG. 2) is discharged along the horizontal direction through the plurality of through-holes 204a into the space V between the lower surface Wb of the substrate W and the base member 13 (see arrow Ar5 in FIG. 2).

[0027] The plurality of pillar portions 204 may have, for example, a prismatic shape, a cylindrical shape, a frustum shape, or a shape with a recessed central portion in the vertical direction. The plurality of pillar portions 204 may be arranged at approximately equal intervals near the outer periphery of the base member 13 so as to form a circular shape as a whole when viewed from above.

[0028] The chemical liquid supply unit 30 is configured to supply an etching liquid L1 to the substrate W. The etching liquid L1 may contain, for example, an alkaline or acidic chemical liquid for removing a film F from the upper surface Wa of the substrate W. The alkaline chemical liquid may contain, for example, an SC-1 liquid (a mixture of ammonia, hydrogen peroxide, and pure water). The acidic chemical liquid may contain, for example, an SC-2 liquid (a mixture of hydrochloric acid, hydrogen peroxide, and pure water), SPM (a mixture of sulfuric acid and hydrogen peroxide), or an HF / HNO3 liquid (a mixture of hydrofluoric acid and nitric acid).

[0029] The chemical liquid supply unit 30 includes a liquid source 31, a pump 32, a valve 33, a nozzle 34, a pipe 35, and a drive source 36 (drive unit). The liquid source 31 is a supply source of the etching liquid L1. The pump 32 operates based on an operation signal from the controller Ctr, and is configured to pump the etching liquid L1 sucked from the liquid source 31 to the nozzle 34 via the pipe 35 and the valve 33.

[0030] The valve 33 operates based on an operation signal from the controller Ctr, and is configured to transition between an open state that allows the fluid to flow through the pipe 35 and a closed state that prevents the fluid from flowing through the pipe 35. The nozzle 34 is disposed above the substrate W so that its discharge outlet faces the upper surface Wa of the substrate W. The nozzle 34 is configured to discharge the etching liquid L1 delivered from the pump 32 from the discharge outlet toward the upper surface Wa of the substrate W.

[0031] The pipe 35 connects, in order from the upstream side, the liquid source 31, the pump 32, the valve 33, and the nozzle 34. The drive source 36 is directly or indirectly connected to the nozzle 34. The drive source 36 operates based on an operation signal from the controller Ctr, and is configured to move the nozzle 34 above the substrate W in the horizontal or vertical direction.

[0032] The rinse liquid supply unit 40 is configured to supply a rinse liquid L2 to the substrate W. The rinse liquid L2 is a liquid for removing (washing away) the etching liquid L1 supplied to the upper surface Wa of the substrate W and components of the film F dissolved by the etching liquid L1 from the substrate W. The rinse liquid L2 may contain, for example, pure water (DIW: deionized water), ozone water, carbonated water (CO2 water), ammonia water, or the like.

[0033] The rinse liquid supply unit 40 includes a liquid source 41, a pump 42, a valve 43, a nozzle 44, a pipe 45, and a drive source 46. The liquid source 41 is a supply source of the rinse liquid L2. The pump 42 operates based on an operation signal from the controller Ctr, and is configured to suck in the rinse liquid L2 from the liquid source 41 and send it to the nozzle 44 via the pipe 45 and the valve 43.

[0034] The valve 43 operates based on an operation signal from the controller Ctr, and is configured to transition between an open state that allows the fluid to flow through the pipe 45 and a closed state that prevents the fluid from flowing through the pipe 45. The nozzle 44 is disposed above the substrate W so that its discharge port faces the upper surface Wa of the substrate W. Like the nozzle 34, the nozzle 44 is configured to discharge the rinsing liquid L2 delivered from the pump 42 from its discharge port toward the upper surface Wa of the substrate W.

[0035] The pipe 45 connects, in order from the upstream side, the liquid source 41, the pump 42, the valve 43, and the nozzle 44. The drive source 46 is directly or indirectly connected to the nozzle 44. The drive source 46 operates based on an operation signal from the controller Ctr, and is configured to move the nozzle 44 above the substrate W in the horizontal or vertical direction.

[0036] The gas supply unit 50 includes a gas source 51, a flow rate regulator 52, and a pipe 53. The gas source 51 stores an inert gas (e.g., nitrogen gas), dry air, or the like, and functions as a gas supply source. The flow rate regulator 52 is provided on the pipe 53 that extends from the gas source 51 to the gap D. The flow rate regulator 52 operates based on an operation signal from the controller Ctr, and is configured to open and close the pipe 53 and regulate the opening degree.

[0037] As shown in Fig. 4, the controller Ctr has a reading unit M1, a memory unit M2, a processing unit M3, and an instruction unit M4 as functional modules. These functional modules are merely a division of the functions of the controller Ctr into a plurality of modules for convenience, and do not necessarily mean that the hardware constituting the controller Ctr is divided into such modules. Each functional module is not limited to being realized by the execution of a program, but may also be realized by a dedicated electric circuit (for example, a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates such circuits.

[0038] The reading unit M1 is configured to read a program from a computer-readable recording medium RM. The recording medium RM stores a program for operating each unit of the substrate processing apparatus 1. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk. In the following description, each unit of the substrate processing apparatus 1 may include a spin holder 10, a chemical liquid supply unit 30, a rinse liquid supply unit 40, a gas supply unit 50, etc.

[0039] The storage unit M2 is configured to store various data, such as a program read from a recording medium RM by the reading unit M1, setting data input by an operator via an external input device (not shown), and the like.

[0040] The processing unit M3 is configured to process various data, and may be configured to generate operation signals for operating each unit of the substrate processing apparatus 1, based on the various data stored in the storage unit M2, for example.

[0041] The instruction unit M4 is configured to transmit the operation signal generated in the processing unit M3 to each unit of the substrate processing apparatus 1.

[0042] The hardware of the controller Ctr may be configured, for example, by one or more control computers. As shown in Fig. 5, the controller Ctr may include a circuit C1 as a hardware configuration. The circuit C1 may be configured by electric circuit elements. The circuit C1 may include, for example, a processor C2, a memory C3, a storage C4, a driver C5, and an input / output port C6.

[0043] The processor C2 may be configured to execute a program in cooperation with at least one of the memory C3 and the storage C4 and to input and output signals via the input / output port C6, thereby realizing each of the functional modules described above. The memory C3 and the storage C4 may function as the storage unit M2. The driver C5 may be a circuit configured to drive each component of the substrate processing apparatus 1. The input / output port C6 may be configured to mediate the input and output of signals between the driver C5 and each component of the substrate processing apparatus 1.

[0044] The substrate processing apparatus 1 may include one controller Ctr, or may include a controller group (controller) composed of multiple controllers Ctr. When the substrate processing apparatus 1 includes a controller group, each of the above-mentioned functional modules may be realized by one controller Ctr, or may be realized by a combination of two or more controllers Ctr. When the controller Ctr is composed of multiple computers (circuits C1), each of the above-mentioned functional modules may be realized by one computer (circuit C1), or may be realized by a combination of two or more computers (circuits C1). The controller Ctr may include multiple processors C2. In this case, each of the above-mentioned functional modules may be realized by one processor C2, or may be realized by a combination of two or more processors C2.

[0045] [Substrate processing method] Next, a method for etching the film F formed on the upper surface Wa of the substrate W using the substrate processing apparatus 1 (substrate processing method) will be described with reference to FIG.

[0046] First, a transfer mechanism (not shown) places the substrate W on the support pins 14. In this state, the controller Ctr controls the gripping mechanism 15, which grips the peripheral edge of the substrate W. As a result, the substrate W is supported by the support pins 14 and the gripping mechanism 15 (see step S11 in FIG. 6).

[0047] Next, the controller Ctr controls the drive mechanism 12 to rotate the rotation shaft 11 at a predetermined rotation speed. At this time, the substrate W also rotates together with the rotation shaft 11, the base member 13, the support pins 14, and the gripping mechanism 15 (see step S12 in FIG. 6).

[0048] Next, the controller Ctr controls the chemical liquid supply unit 30 to supply the etching liquid L1 toward the upper surface Wa of the rotating substrate W (see step S13 in FIG. 6). As a result, the etching liquid L1 flows along the upper surface Wa toward the outer periphery of the substrate W due to centrifugal force, and is then thrown off outward from the outer periphery of the substrate W. As a result, the etching process of the film F formed on the upper surface Wa of the substrate W progresses.

[0049] During the supply of the etching liquid L1, the controller Ctr also controls the gas supply unit 50 to supply the gas from the gas rectifying unit 20 (the rectifying member 200) through the gap D and the flow path FL to the space V between the lower surface Wb of the substrate W and the base member 13. At this time, as illustrated in FIG. 2, the gas flows from the gap D into the flow path FL (see arrow Ar1 in FIG. 2), turns approximately 180 degrees (see arrow Ar2 in FIG. 2), and then changes direction by approximately 90 degrees (see arrow Ar3 in FIG. 2). Then, part of the gas forms a vortex at the opening OP (see arrow Ar4 in FIG. 2). Meanwhile, another part of the gas is discharged horizontally through the multiple through-holes 204a toward the space V between the lower surface Wb of the substrate W and the base member 13 (see arrow Ar5 in FIG. 2), and flows to the outer periphery of the substrate W.

[0050] Next, the controller Ctr controls the rinse liquid supply unit 40 to supply the rinse liquid L2 toward the upper surface Wa of the rotating substrate W (see step S14 in FIG. 6). As a result, the rinse liquid L2 flows along the upper surface Wa toward the outer periphery of the substrate W due to centrifugal force, and is then thrown outward from the outer periphery of the substrate W. As a result, the etching liquid L1 and dissolved material of the film F are washed away from the upper surface Wa of the substrate W. At this time, the controller Ctr may also control the gas supply unit 50 to supply gas from the gas rectification unit 20 (rectification member 200) to the space V.

[0051] Next, the controller Ctr controls the drive mechanism 12 to maintain the rotation of the substrate W. This causes the rinse liquid L2 to be shaken off from the substrate W, and the substrate W is dried (see step S15 in FIG. 6). This completes the processing of the substrate W. In order to prevent the occurrence of watermarks and the like, after the supply of the rinse liquid L2 to the substrate W, an organic solvent (e.g., isopropyl alcohol) may be supplied to the upper surface Wa of the substrate W, and then the substrate W may be dried.

[0052] [Effect] According to the above example, the other part of the gas is discharged through the multiple through-holes 204a in the horizontal direction toward the space V between the lower surface Wb of the substrate W and the base member 13 (see arrow Ar5 in FIG. 2). That is, the other part of the gas changes direction multiple times, making it easier for it to flow mainly in the horizontal direction. This makes it more difficult for the gas to flow toward the lower surface Wb of the substrate W, making it more difficult for the substrate W to be locally cooled by the gas. As a result, it is possible to improve the in-plane uniformity of the etching process.

[0053] According to the above example, the portion of the gas forms a vortex at the opening OP. As a result, the gas also flows in the portion of the space V between the lower surface Wb of the substrate W and the base member 13 above the flow straightening member 200, and the gas is supplied over a wide area of the space V. This makes it possible to improve the in-plane uniformity of the etching process while suppressing adhesion of foreign matter to the lower surface Wb of the substrate W and intrusion of the etching solution onto the lower surface Wb of the substrate W.

[0054] According to the above example, the horizontal separation distance between the turning portion 102 and the horizontal rectifying portion 203 can be set to approximately 2 mm to 10 mm. If the separation distance is 2 mm or more, gas is less likely to be ejected upward from the opening OP, and a vortex of gas tends to be more likely to be formed at the opening OP. If the separation distance is 10 mm or less, the vortex of gas formed at the opening OP is less likely to expand in diameter, and partial cooling of the substrate W due to the vortex tends to be suppressed.

[0055] According to the above example, the through hole 13a is provided in the center of the base member 13, and the outer periphery of the bottom wall portion 201 is connected to the through hole 13a. Therefore, the rectifying member 200 rotates together with the base member 13, the support pins 14, the gripping mechanism 15, and the substrate W. That is, the rectifying member 200 is stationary relative to the substrate W. Therefore, the gas blown from the gas rectifying unit 20 into the space V between the lower surface Wb of the substrate W and the base member 13 is likely to flow radially on the lower surface Wb of the substrate W. This makes it possible to further suppress adhesion of foreign matter to the lower surface Wb of the substrate W.

[0056] [Variations] The disclosure in this specification should be considered to be illustrative in all respects and not restrictive. Various omissions, substitutions, modifications, etc. may be made to the above examples without departing from the scope and spirit of the claims.

[0057] (1) The through-hole 13a may be provided at a position eccentric to the center of the base member 13.

[0058] (2) The outer periphery of the bottom wall portion 201 may not be connected to the through-hole 13a, and the inner periphery of the bottom wall portion 201 may be connected to the rod-shaped member 100. In other words, the flow rectifying member 200 does not have to rotate.

[0059] (3) As illustrated in Fig. 7, the plurality of pillar portions 204 may extend obliquely with respect to both the circumferential direction and the radial direction of the rotation axis of the rectifying member 200, as viewed from the direction of the rotation axis. In this case, the plurality of pillar portions 204 rectify the gas, and the gas is more easily discharged to the space V between the lower surface Wb of the substrate W and the base member 13. This makes it possible to further suppress adhesion of foreign matter to the lower surface Wb of the substrate W. Note that the pillar portions 204 may be wing-shaped as in the example shown in Fig. 7, or may be flat. In other words, the rectifying member 200 may have a structure similar to a sirocco fan or a turbo fan.

[0060] (4) As illustrated in Fig. 8, the rectifying member 200 may further include an annular cover portion 205 provided on one of the folding portion 102 and the horizontal rectifying portion 203 so as to be positioned between them. In this case, the size of the opening OP can be adjusted by the cover portion 205. That is, it is possible to adjust the diameter of the vortex formed at the opening OP. Note that the cover portion 205 may be configured to be detachable from one of the folding portion 102 and the horizontal rectifying portion 203, or may be fixed thereto.

[0061] (5) In step S13 of FIG. 6 , the controller Ctr may control the gas supply unit 50 to adjust the amount of gas supplied from the gas supply unit 50 depending on the position at which the etching liquid L1 is discharged onto the substrate W. Specifically, the drive source 36 and the gas supply unit 50 may be controlled so that the amount of gas supplied from the gas supply unit 50 when the etching liquid L1 is discharged onto the central portion of the substrate W from the nozzle 34 is less than the amount of gas supplied from the gas supply unit 50 when the etching liquid L1 is discharged onto the peripheral portion of the substrate W from the nozzle 34. In this case, the amount of gas supplied when the central portion of the substrate W is being etched is relatively less, so that the degree of progress of the etching process becomes closer near the center and at the peripheral portion of the substrate W. This makes it possible to further improve the in-plane uniformity of the etching process. Note that the “central portion” of the substrate W may be, for example, a radius from the center of the substrate W ranging from 60 mm to 90 mm.

[0062] (6) In step S13 of Fig. 6, the controller Ctr may control the chemical liquid supply unit 30 to supply the etching liquid L1 between the vicinity of the center of the substrate W and the peripheral edge of the substrate while moving the nozzle 34 back and forth. In this case, the etching liquid L1 is more likely to be supplied uniformly over the entire substrate. This makes it possible to improve the in-plane uniformity of the etching process.

[0063] (7) In step S13 of Fig. 6, the controller Ctr may control the chemical liquid supply unit 30 to set the movement speed of the nozzle 34 when discharging the etching liquid L1 from the nozzle 34 onto the central portion of the substrate W to 150 mm / sec or less. In this case, compared to a general processing recipe, the movement speed of the nozzle 34 when etching the central portion of the substrate W is relatively slow, and therefore the central portion of the substrate W is etched for a relatively long time. Therefore, the progress of the etching process becomes similar near the center and at the outer periphery of the substrate W. This makes it possible to further improve the in-plane uniformity of the etching process.

[0064] (8) In step S13 of FIG. 6 , the controller Ctr may control the gas supply unit 50 to adjust the amount of gas supplied to the gas rectification unit 20 in accordance with the rotation speed of the substrate W. In this case, for example, the amount of gas supplied to the gas rectification unit 20 is set to decrease as the rotation speed of the substrate W decreases. When the rotation speed of the substrate W is low, the negative pressure generated in the space V between the lower surface Wb of the substrate W and the base member 13 decreases, making it difficult for foreign matter to be sucked into the space V. Therefore, even if the amount of gas supplied to the gas rectification unit 20 is small, adhesion of foreign matter to the lower surface Wb of the substrate W tends to be suppressed. Moreover, when the amount of gas supplied to the gas rectification unit 20 is low, the substrate W is less likely to be cooled by the gas. Therefore, the in-plane uniformity of the etching process also tends to increase. For example, when the rotation speed of the substrate W is approximately 250 rpm, the amount of gas supplied to the gas rectification unit 20 may be approximately 20 m / min. When the rotation speed of the substrate W is about 1000 rpm, the gas supply rate to the gas rectification unit 20 may be about 40 m / min. In other words, the rotation speed of the substrate W and the gas supply rate may have an exponential correspondence relationship.

[0065] [Other examples] Example 1. An example of a substrate processing apparatus includes a support configured to support a substrate having a film formed on its upper surface, a base member configured to face the underside of the substrate supported on the support member while being spaced apart from it and having a through-hole formed therein, a rotation unit configured to rotate the base member and the support member, a chemical solution supply unit configured to supply an etching solution to the upper surface of the substrate supported on the support member, a gas supply unit, and a gas rectification unit configured to rectify the gas supplied from the gas supply unit and discharge the rectified gas into a space between the underside of the substrate supported on the support member and the base member. The gas rectification unit includes a rod-shaped member extending in the vertical direction, including a tip portion facing the underside of the substrate supported on the support member and located within the through-hole, and an annular rectification member arranged to surround the tip portion. The tip portion includes an annular folded portion provided on the outer circumferential surface of the tip portion so as to protrude outward from the outer circumferential surface of the tip portion and then extend downward. The straightening member includes an annular bottom wall portion whose inner peripheral edge is positioned so as to be spaced apart from the outer peripheral surface of the tip portion; an annular protrusion portion extending upward from the inner peripheral portion of the bottom wall portion so that the tip portion is located between the folded portion and the outer peripheral surface of the tip portion; an annular horizontal straightening portion extending horizontally outward from the folded portion and above the bottom wall portion while being spaced apart from the bottom wall portion; and a plurality of pillar portions connecting the horizontal straightening portion and the bottom wall portion and aligned circumferentially of the tip portion.

[0066] During etching, gas may be supplied to the space between the underside of the substrate and the base member to prevent foreign matter from adhering to the underside of the substrate or to prevent the etching solution from adhering to the underside by wrapping around the periphery of the substrate. If gas is supplied to the space between the underside of the substrate and the base member without the above-mentioned flow straightening member, the airflow may become uneven on the underside of the substrate due to factors such as the precision of the machining process of the device. If an etching solution is supplied to the upper surface of the substrate in this state to etch the film on the upper surface of the substrate, the progress of the chemical reaction of the etching solution may also become uneven, which may affect the uniformity of the film thickness after etching across the surface of the substrate.

[0067] However, in Example 1, the gas supplied from the gas supply unit to the gas rectifying unit passes through the gap between the outer circumferential surface of the tip and the protruding portion, then changes direction, passes through the gap between the protruding portion and the folded portion, and then changes direction again to the horizontal direction. Therefore, a portion of the gas that has changed direction horizontally passes through the gap between the horizontal rectifying unit and the bottom wall, and is then discharged into the space between the underside of the substrate and the base member. Therefore, by changing direction multiple times, the gas discharged from the gas rectifying unit tends to flow primarily horizontally. This makes it difficult for the gas to flow toward the underside of the substrate, making it difficult for the substrate to be locally cooled by the gas. As a result, it is possible to improve the in-plane uniformity of the etching process.

[0068] In Example 1, the horizontal rectifier is located further outward than the turning portion. Therefore, the gas rectifier has an annular opening that opens upward between the horizontal rectifier and the turning portion. Therefore, another portion of the gas that has been redirected horizontally forms a vortex at this opening. This allows the gas to flow even in the portion above the rectifier in the space between the underside of the substrate and the base member, thereby supplying the gas over a wide area of the space. This makes it possible to improve the in-plane uniformity of the etching process while suppressing the adhesion of foreign matter to the underside of the substrate and the intrusion of the etching solution onto the underside of the substrate.

[0069] Example 2: In the apparatus of Example 1, the horizontal distance between the turning portion and the horizontal rectifying portion may be 2 mm to 10 mm. If the distance is 2 mm or more, it becomes difficult for gas to be ejected upward from the opening of the gas rectifying portion, and a vortex of gas tends to be easily formed at the opening of the gas rectifying portion. If the distance is 10 mm or less, it becomes difficult for the diameter of the vortex of gas formed at the opening of the gas rectifying portion to expand, and partial cooling of the substrate due to the vortex tends to be suppressed.

[0070] Example 3 In the device of Example 1 or Example 2, the rectifying member may further include an annular cover portion provided on one of the folded portion and the horizontal rectifying portion so as to be positioned between them. In this case, the size of the opening of the gas rectifying portion can be adjusted by the cover portion.

[0071] Example 4: In any of the devices of Examples 1 to 3, the through-hole may be provided in the center of the base member, and the outer periphery of the bottom wall may be connected to the through-hole. In this case, the rectifying member rotates together with the base member, the support member, and the substrate. That is, the rectifying member is stationary relative to the substrate. Therefore, gas blown from the gas rectifying unit into the space between the underside of the substrate and the base member tends to flow radially on the underside of the substrate. This makes it possible to further suppress the adhesion of foreign matter to the underside of the substrate.

[0072] Example 5: In the apparatus of Example 4, the plurality of pillars may extend obliquely with respect to both the circumferential direction and the radial direction of the rotation axis when viewed from the direction of the rotation axis of the straightening member. In this case, the plurality of pillars straightens the gas flow, making it easier for the gas to be discharged into the space between the underside of the substrate and the base member. This makes it possible to further suppress the adhesion of foreign matter to the underside of the substrate.

[0073] Example 6: The apparatus of any one of Examples 1 to 5 may further include a control unit, wherein the chemical solution supply unit includes a nozzle configured to discharge an etching solution and a drive unit configured to move the nozzle horizontally above the substrate supported by the support unit, and the control unit may be configured to control the drive unit and the gas supply unit to execute a process of adjusting the amount of gas supplied from the gas supply unit according to the discharge position of the etching solution onto the substrate so that the amount of gas supplied to the gas rectifier when the etching solution is discharged from the nozzle to the central portion of the substrate is less than the amount of gas supplied to the gas rectifier when the etching solution is discharged from the nozzle to the peripheral portion of the substrate. Incidentally, there may be a difference between the degree to which the central portion of the substrate is cooled by the vortex generated at the opening of the gas rectifier and the degree to which the peripheral portion of the substrate is cooled by the gas blown out from the gap between the horizontal rectifier and the bottom wall. However, according to Example 7, the amount of gas supplied when the central portion of the substrate is being etched is relatively small, so the degree of progress of the etching process becomes similar between the central portion of the substrate and the peripheral portion. Therefore, it is possible to further improve the in-plane uniformity of the etching process.

[0074] Example 7 In the apparatus of Example 6, the central portion may have a radius from the center of the substrate in the range of 60 mm to 90 mm.

[0075] Example 8: In the apparatus of Example 6 or Example 7, the control unit may be configured to control the drive unit to reciprocate the nozzle, thereby supplying the etching liquid to the area between the center of the substrate and the peripheral edge of the substrate. In this case, the etching liquid is more likely to be supplied uniformly over the entire substrate. This makes it possible to improve the in-plane uniformity of the etching process.

[0076] Example 9: In any of the apparatuses of Examples 6 to 8, the control unit may be configured to control the drive unit to execute a process of setting the nozzle movement speed when discharging the etching solution from the nozzle onto the central portion of the substrate to 150 mm / sec or less. As described in Example 6, there may be a difference between the degree to which the central portion of the substrate is cooled and the degree to which the peripheral portion of the substrate is cooled. However, according to Example 9, the nozzle movement speed is relatively slow when the central portion of the substrate is being etched, so the central portion of the substrate is etched for a relatively long time. Therefore, the progress of the etching process becomes similar between the central portion of the substrate and the peripheral portion. This makes it possible to further improve the in-plane uniformity of the etching process.

[0077] Example 10: In the apparatus of any of Examples 6 to 9, the control unit may be configured to control the gas supply unit to execute a process of adjusting the amount of gas supplied to the gas rectification unit in accordance with the rotation speed of the substrate. In this case, for example, the lower the rotation speed of the substrate, the smaller the amount of gas supplied to the gas rectification unit. When the rotation speed of the substrate is low, the negative pressure generated in the space between the underside of the substrate and the base member is reduced, making it difficult for foreign matter to be sucked into the space. Therefore, even if the amount of gas supplied to the gas rectification unit is small, adhesion of foreign matter to the underside of the substrate tends to be suppressed. Moreover, when the amount of gas supplied to the gas rectification unit is small, the substrate is less likely to be cooled by the gas. Therefore, the in-plane uniformity of the etching process also tends to be improved.

[0078] Example 11. An example of a substrate processing method includes a first step of supporting a substrate with a support member so that the underside of the substrate, on which a film is formed, faces a base member while being spaced apart; a second step of rotating the substrate by rotating the base member and the support member; and a third step of supplying an etching solution to the upper surface of the rotating substrate while supplying gas to a gas rectifier member, thereby discharging the gas rectified by the gas rectifier member into a space between the underside of the substrate, on whose upper surface the etching solution has been supplied, and the base member. The gas rectifier member includes a rod-shaped member extending in the vertical direction, including a tip portion that faces the underside of the substrate supported by the support member and is located within a through-hole provided in the base member, and an annular rectifier member arranged to surround the tip portion. The tip portion includes an annular folded portion provided on the outer circumferential surface so as to protrude outward from the outer circumferential surface of the tip portion and then extend downward. The straightening member includes an annular bottom wall portion whose inner peripheral edge is disposed so as to be spaced apart from the outer peripheral surface of the tip portion, an annular protruding portion extending upward from the inner peripheral portion of the bottom wall portion so that the tip portion is located between the folded portion and the outer peripheral surface of the tip portion, an annular horizontal straightening portion extending horizontally outward from the folded portion and above the bottom wall portion while being spaced apart from the bottom wall portion, and a plurality of pillar portions connecting the horizontal straightening portion and the bottom wall portion and aligned along the circumferential direction of the tip portion. In this case, the same effects as those of the device of Example 1 can be obtained.

[0079] Example 12 In the method of Example 11, the distance between the folding portion and the horizontal rectifying portion in the horizontal direction may be 2 mm to 10 mm. In this case, the same effects as those of the device of Example 2 can be obtained.

[0080] Example 13 In the method of Example 11 or Example 12, the straightening member may further include an annular cover portion provided on one of the folded portion and the horizontal straightening portion so as to be positioned between them. In this case, the same effects as those of the device of Example 3 can be obtained.

[0081] Example 14: In any of the methods of Examples 11 to 13, the through-hole may be provided in the center of the base member, and the outer periphery of the bottom wall may be connected to the through-hole. In this case, the same effects as those of the device of Example 4 can be obtained.

[0082] Example 15 In the method of Example 14, the plurality of pillars may extend obliquely with respect to both the circumferential direction and the radial direction of the rotation shaft when viewed from the direction of the rotation shaft of the straightening member. In this case, the same effects as those of the device of Example 5 can be obtained.

[0083] Example 16: In any of the methods of Examples 11 to 15, the third step may include reducing the amount of gas supplied to the gas rectification unit when the etching liquid is discharged from the nozzle onto the central part of the substrate compared to the amount of gas supplied to the gas rectification unit when the etching liquid is discharged from the nozzle onto the peripheral part of the substrate. In this case, the same effects as those of the apparatus of Example 6 can be obtained.

[0084] Example 17 In the method of Example 16, the central portion may have a radius ranging from 60 mm to 90 mm from the center of the substrate.

[0085] Example 18 In the method of Example 16 or Example 17, the third step may include supplying the etching solution to a region between the vicinity of the center of the substrate and the peripheral edge of the substrate by reciprocating the nozzle. In this case, the same effects as those of the apparatus of Example 8 can be obtained.

[0086] Example 19: In any of the methods of Examples 16 to 18, the third step may include setting the nozzle movement speed when discharging the etching solution from the nozzle onto the central part of the substrate to 150 mm / sec or less. In this case, the same effects as those of the device of Example 9 can be obtained.

[0087] Example 20: In any of the methods of Examples 16 to 19, the third step may include adjusting the amount of gas supplied to the gas rectifying unit in accordance with the rotation speed of the substrate. In this case, the same effects as those of the apparatus of Example 10 can be obtained.

[0088] Example 21. An example of a computer-readable recording medium may have a program recorded thereon for causing a substrate processing apparatus to execute any one of the methods of Examples 11 to 20. In this case, the same effects as those of the apparatus of Example 1 can be obtained. In this specification, the computer-readable recording medium may include a non-transitory computer recording medium (e.g., various main storage devices or auxiliary storage devices) or a propagated signal (e.g., a data signal that can be provided via a network). [Explanation of symbols]

[0089] 1...substrate processing apparatus, 10...rotation holding unit, 11...rotation shaft (rotating unit), 12...driving mechanism (rotating unit), 13...base member, 13a...through hole, 14...support pin (supporting unit), 15...gripping mechanism (supporting unit), 20...gas rectifying unit, 30...chemical liquid supply unit, 34...nozzle, 36...driving source (driving unit), 50...gas supply unit, 100...rod-shaped member, 101...tip portion, 102...folded portion, 200...rectifying member, 201...bottom wall portion, 202...protruding portion, 203...horizontal rectifying unit, 204...column portion, 205...cover portion, Ctr...controller (control unit), D...gap, F...film, FL...flow path, L1...etchant, OP...opening, RM...recording medium, V...space, W...substrate, Wa...upper surface, Wb...lower surface.

Claims

1. An annular gas rectifying member for rectifying a gas supplied to a lower surface of a substrate, comprising: an annular bottom wall portion; an annular protrusion extending upward from an inner periphery of the bottom wall; an annular horizontal straightening portion that is above the bottom wall portion and extends outward from the bottom wall portion along the horizontal direction while being spaced apart from the bottom wall portion; a gas rectifying member including a plurality of pillars that connect an inner peripheral portion of the horizontal rectifying portion and an outer peripheral portion of the bottom wall portion and are arranged in a circumferential direction of a central axis of the gas rectifying member;

2. The gas rectifying member according to claim 1 , wherein the plurality of pillar portions extend obliquely with respect to both the circumferential direction and the radial direction of the central axis when viewed from the extending direction of the central axis.

3. A gas rectifying member as described in claim 1 or 2, wherein the inner periphery of the horizontal rectifying portion is spaced apart from the tip of the protrusion in the horizontal direction, thereby forming an opening between the inner periphery of the horizontal rectifying portion and the tip of the protrusion.

4. A gas rectifying member described in any one of claims 1 to 3, wherein when positioned below the underside of the substrate, the bottom wall portion is positioned so that the inner peripheral edge of the bottom wall portion surrounds the center of the substrate when viewed from the extension direction of the central axis.

5. A gas straightening member described in any one of claims 1 to 4, wherein the multiple pillar portions are arranged at approximately equal intervals in the circumferential direction of the central axis so as to form a circular shape overall when viewed in the direction of extension of the central axis.

6. A gas rectifying member described in any one of claims 1 to 5, further comprising a cover member provided on the inner periphery of the horizontal rectifying portion so as to extend radially inward from the inner periphery of the horizontal rectifying portion.

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