Process chamber, semiconductor process equipment and process method

Abstract

The present invention discloses a process chamber, a semiconductor process device, and a process method. The process chamber includes a chamber body, and an annular lining assembly is provided around the inner wall of the chamber body in the circumferential direction within the chamber body. A liftable deposition barrier ring is provided on the inner ring side of the lining assembly, and a liftable base for placing a wafer to be processed is provided within the chamber body. The lining assembly is provided with a first opening penetrating the side wall of the lining assembly, and the deposition barrier ring is provided with a second opening penetrating the side wall of the deposition barrier ring. The chamber body is provided with a heating lamp assembly facing the first opening. Thus, when the deposition barrier ring is in the first position, the second opening and the first opening are offset from each other, and when the deposition barrier ring is in the second position, the second opening and the first opening at least partially overlap, and the second position is higher than the first position.

Description

[Technical Field]

[0001] The present invention relates to the field of semiconductor processing equipment, and more particularly to process chambers, semiconductor processing equipment, and processing methods. [Background technology]

[0002] In the back-end manufacturing of integrated circuit chips, the most important technology is the formation of metal interconnects using magnetron sputtering in physical vapor deposition (PVD). PVD deposits metal wires into trenches and vias formed by photolithography to interconnect transistors and form the necessary circuits. A complete metal interconnect process typically consists of barrier / seed layer deposition, copper plating, and chemical mechanical polishing (CMP). However, as chip feature sizes shrink, via and trench openings become smaller while their aspect ratios increase, posing significant challenges to barrier / seed layer deposition.

[0003] Research has shown that the reflow process is a technique for forming reliable copper interconnect layers. First, a copper seed layer is deposited at low temperature, and then the wafer is heated. The high temperature (usually above 300°C) enhances both the surface mobility of copper and the cohesion of crystalline grains. Under the influence of diffusion and capillary forces, the surface copper atoms migrate, and the deposited copper is absorbed into the bottom of the deep hole, achieving bottom-up filling. This completes one cycle of copper reflow. The smaller the dimension of the deep hole, the stronger the capillary force, resulting in a better filling effect. This cycle is repeated until the deep hole is completely filled.

[0004] The base used in conventional copper reflow equipment is a low-temperature electrostatic chuck (ESC), and when performing the process, a DC voltage must be applied to the ESC, which attracts the wafer by electrostatic action and performs the deposition process.At the same time, gas (back-blow gas) is introduced between the ESC and the wafer, which transfers the heat of the wafer to the ESC through the gas, thereby achieving the wafer cooling effect.

[0005] Before the copper reflow process begins, the DC voltage applied to the ESC is turned off and the adhesive force between the ESC and the wafer is released. This process is called desorption. The ESC is then lowered, the ejector pins are raised, and the wafer is elevated above the deposition process position. Lowering the ESC and raising the wafer increases the distance between the wafer and the ESC, providing more space for the heating lamp tube to irradiate the wafer. After the wafer reaches this elevated position, the copper reflow process begins. This involves applying very high power to the heating lamp tube, irradiating the backside of the wafer with energy and raising its temperature. After the wafer completes the reflow process at a high temperature, the ESC is raised again, the ejector pins are lowered, and the wafer is dropped onto the front surface of the ESC. Then, DC voltage is applied again to the ESC to adsorb the wafer. Backflow gas is introduced to cool the wafer, and a second deposition process is performed. After the deposition process is completed, the above desorption process is performed again, the ejector pins are raised, and the wafer is removed from the chamber.

[0006] In this process flow, the wafer is subjected to two cycles of adsorption, desorption, and lift-up. If the backside of the wafer is made of a material other than silicon, such as silicon dioxide or silicon nitride, which has low conductivity, the wafer's charge may not be fully discharged, resulting in residual charges generating an adsorption force, which may cause incomplete desorption. Furthermore, residual adsorption force may remain between the wafer and the ESC, causing the wafer to shift when it is lifted by the ejector pin. In some cases, if the residual adsorption force is too strong, the ejector pin may damage the wafer. Summary of the Invention [Problem to be solved by the invention]

[0007] The present invention aims to provide a process chamber, semiconductor process equipment, and process method that solve problems such as wafer misalignment, deformation, and damage caused by multiple adsorption / desorption and heating of the wafer to be processed in a copper reflow process flow. [Means for solving the problem]

[0008] In a first aspect, the present invention provides a process chamber for semiconductor processing equipment, comprising a chamber body, wherein an annular lining assembly is disposed within the chamber body in a circumferential direction around an inner wall of the chamber body, and a liftable deposition barrier ring is disposed on the inner ring side of the lining assembly, and a liftable base is disposed within the chamber body for placing a wafer to be processed, the lining assembly has a first aperture extending through a side wall of the lining assembly, and the deposition barrier ring has a second aperture extending through a side wall of the deposition barrier ring, and the chamber body has a heat lamp assembly facing the first aperture, wherein when the deposition barrier ring is in a first position, the second aperture and the first aperture are offset from each other, and when the deposition barrier ring is in a second position, the second aperture and the first aperture at least partially overlap, and the second position is higher than the first position.

[0009] Optionally, the first apertures are multiple and are distributed at intervals around the lining assembly, the number of the second apertures is the same as the number of the first apertures, when the deposition barrier ring is in the first position, each of the second apertures and each of the first apertures correspond one-to-one and are offset from each other, when the deposition barrier ring is in the second position, each of the second apertures and each of the first apertures correspond one-to-one and at least partially overlap, the number of the heat lamp assemblies is the same as the number of the first apertures, and each of the heat lamp assemblies faces each of the first apertures in a one-to-one correspondence.

[0010] Optionally, when the base is in a first process position, the deposition barrier ring is in the first position and supported by the lining assembly, and when the base is raised from the first process position to a second process position, the base can drive the deposition barrier ring to raise it to the second position.

[0011] Optionally, an annular step is formed on the inner ring side of the lining assembly, and a first overlap member and a second overlap member are respectively provided on the top and bottom of the deposition barrier ring, and when the deposition barrier ring is in a first position, the deposition barrier ring overlaps the annular step via the first overlap member, and when the base rises from the first process position to the second process position, the base can push up the deposition barrier ring via the second overlap member.

[0012] Optionally, the lining assembly includes a lower lining, the lower lining including a first cylindrical side wall and a second cylindrical side wall arranged coaxially, the second cylindrical side wall being located below the first cylindrical side wall, the first cylindrical side wall being connected to a side wall of the chamber body, the inner diameter of the second cylindrical side wall being smaller than the inner diameter of the first cylindrical side wall, the annular step being formed by connection between a bottom of the first cylindrical side wall and an upper part of the second cylindrical side wall, and the plurality of first openings being provided in the second cylindrical side wall.

[0013] Optionally, a chamber body support member is provided on an upper portion of the side wall of the chamber body, and a first annular flange extending laterally is provided on an upper portion of the first cylindrical side wall, and the first cylindrical side wall overlaps the chamber body support member via the first annular flange.

[0014] Optionally, the first overlap member is a second annular flange extending laterally outward from the top of the deposition barrier ring.

[0015] Optionally, the bottom of the second cylindrical side wall is provided with a third annular flange extending away from the inner wall of the chamber body, the end of the third annular flange having an upwardly extending annular flange, and the second overlap member includes a laterally disposed annular plate, the lower surface of which is provided with an annular groove that overlaps and fits with the annular flange.

[0016] Optionally, the heat lamp assembly includes an annular reflective member and an annular heat lamp tube, the annular reflective member is mounted on the inner wall of the chamber body in the circumferential direction of the chamber body, the inner wall of the annular reflective member is an arc-shaped reflective surface facing the center of the chamber body, and the annular heat lamp tube is mounted on the arc-shaped reflective surface via a plurality of support members.

[0017] Alternatively, the first cylindrical side wall and the second cylindrical side wall are integrally molded, and the annular step is formed by bending between the bottom of the first cylindrical side wall and the top of the second cylindrical side wall, or the first cylindrical side wall and the second cylindrical side wall are separate members, and the bottom of the first cylindrical side wall and the top of the second cylindrical side wall are respectively provided with two overlapping portions extending laterally and fitting together, and the two overlapping portions form the annular step.

[0018] Optionally, the deposition barrier ring and the second overlap member are integrally molded, or the deposition barrier ring and the second overlap member are separate members, and the bottom of the deposition barrier ring has a stepped overlap portion that fits with the outer edge of the second overlap member.

[0019] Optionally, the first aperture and the second aperture are both elongated through holes, and the distance between two adjacent first apertures and the distance between two adjacent second apertures are both 10 mm or more and 30 mm or less.

[0020] In a second aspect, the present invention provides a semiconductor processing device comprising a process chamber according to the first aspect.

[0021] In a third aspect, the present invention provides a processing method using the semiconductor processing equipment described in the second aspect, including the steps of: raising a base on which a wafer to be processed is placed to a first process position and controlling the deposition barrier ring to be lowered to the first position; introducing back blow gas between the base and the wafer to be processed and performing a first deposition process on the wafer to be processed; after completing the first deposition process, stopping the introduction of back blow gas between the base and the wafer to be processed; raising the base to a second process position and controlling the deposition barrier ring to be raised to the second position, irradiating and heating the wafer with the heat lamp assembly and performing a reflow process; after completing the reflow process, lowering the base to the first process position and controlling the deposition barrier ring to be lowered to the first position, again introducing back blow gas between the base and the wafer and performing a second deposition process on the wafer; and after completing the second deposition process, stopping the introduction of back blow gas between the base and the wafer. [Effects of the Invention]

[0022] The beneficial effects of the present invention are as follows: the process chamber of the present invention has first and second apertures formed in the sidewalls of the lining assembly and the deposition barrier ring, respectively, and a heat lamp assembly facing the first aperture in the chamber body, so that when the deposition barrier ring is at a first position, the second aperture and the first aperture are offset from each other, so that a deposition process can be performed on a wafer to be processed on the base at the first processing position, ensuring that reactants in the deposition process do not deposit on the inner wall of the chamber; and when the deposition barrier ring is at a second position higher than the first position, the second aperture and the first aperture at least partially overlap, so that light from the heat lamp assembly can be irradiated through the first and second apertures onto the wafer to be processed on the base at the second processing position, heating the wafer and completing the copper reflow process. Compared to the prior art, the present invention does not require electrostatic desorption to detach the wafer being processed from the base during switching between the first process position where deposition is performed and the second process position where copper reflow is performed. Therefore, the risk of wafer slippage caused by the ejector pins pushing up the wafer and the problem of position drift caused by the wafer being raised and lowered can be effectively avoided, residual attraction force caused by multiple adsorption and desorption cycles can be prevented, and the risk of wafer slippage and wafer damage can also be eliminated.

[0023] The apparatus of the present invention has other features and advantages that will become apparent from or are described in detail in the drawings incorporated herein and the following specific embodiments, which together serve to explain certain principles of the present invention. [Brief explanation of the drawings]

[0024] These and other objects, features and advantages of the present invention will become more apparent from a more detailed description of exemplary embodiments of the present invention with reference to the drawings, in which like reference numerals generally represent like elements.

[0025] [Figure 1]1 is a vertical cross-sectional view of a process chamber according to a first embodiment of the present invention; [Figure 2] 1 shows a schematic diagram of a first aperture in a second cylindrical side wall of a lower lining and a second aperture in a deposition barrier ring in a process chamber according to Example 1 of the present invention; [Figure 3] 1 shows a top view of an annular heat lamp tube in a process chamber according to a first embodiment of the present invention. [Figure 4] 1 is a schematic diagram showing a case where a base in a process chamber according to a first embodiment of the present invention is in a first process position. [Figure 5] 2 is a schematic diagram showing a state in which the base in the process chamber according to the first embodiment of the present invention is in a second process position. FIG. [Figure 6] 3 shows a schematic diagram of the configuration of another lower lining of the process chamber according to Example 1 of the present invention. [Figure 7] 1 is a schematic diagram showing the configuration of another deposition barrier ring of a process chamber according to Example 1 of the present invention. [Figure 8] 1 shows a step diagram of a process method according to Example 3 of the present invention. [Figure 9] 3 shows a flowchart of steps of a copper reflow process method according to Example 3 of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0026] The conventional copper reflow process involves the following steps: wafer pickup-desorption-push-up-heat-drop-pickup-desorption-push-up. In this flow, the wafer pickup-desorption-push-up process occurs twice. If the backside of the wafer is made of a material other than silicon, such as an insulating material like silicon dioxide or silicon nitride, there is a problem of incomplete desorption. Due to incomplete desorption, there is a residual attraction force between the wafer and the electrostatic chuck (ESC), which causes the wafer to shift when it is pushed up by the ejector pin. In some cases, if the residual attraction force is too strong, the ejector pin may damage the wafer.

[0027] Furthermore, there may be a relatively large stress inside the wafer, which may cause the wafer to bend and deform after heating (for example, the height difference may be 1 mm or more), which may also cause the wafer to slip. Even if there is no slippage, the contact surface between the wafer and the ESC after dropping becomes small, which causes the problem of not being able to re-adsorb.

[0028] Similarly, in the full flow, the two adsorption processes lead to a significant increase in the residual adsorption force of the ESC, which can cause wafer misalignment / breakage. If the amount of wafer misalignment is large, problems such as the wafer colliding with the manipulator or being pinched by the isolation valve when being transported out of the chamber can occur.

[0029] The process chamber, semiconductor process equipment and process method of the present invention can solve problems such as wafer misalignment, deformation and breakage caused by repeated wafer adsorption-desorption and heating in the copper reflow process flow.

[0030] The present invention will now be described in more detail with reference to the drawings. While the drawings illustrate preferred embodiments of the present invention, it should be understood that the present invention is not limited to the embodiments set forth herein, but can be embodied in various forms. Rather, these embodiments are provided to more thoroughly and completely explain the present invention, and will fully convey the scope of the present invention to those skilled in the art.

[0031] Example 1 FIG. 1 is a vertical cross-sectional view of a process chamber according to a first embodiment of the present invention.

[0032] As shown in FIG. 1, the process chamber includes a chamber body, a ring-shaped lining assembly disposed around the inner wall of the chamber body, a deposition barrier ring 214 that can be raised and lowered on the inner ring side of the lining assembly, a base 202 that can be raised and lowered for placing a wafer to be processed on, the lining assembly having a first opening 213 penetrating a side wall of the lining assembly, the deposition barrier ring 214 having a second opening 215 penetrating a side wall of the deposition barrier ring 214, a heating lamp assembly facing the first opening 213, when the deposition barrier ring 214 is in a first position, the second opening 215 and the first opening 213 are offset from each other, and when the deposition barrier ring 214 is in a second position, the second opening 215 and the first opening 213 at least partially overlap, and the second position is higher than the first position.

[0033] In some embodiments, in order to improve process uniformity by uniformly heating the wafer being processed in the circumferential direction, the first apertures 213 are multiple and distributed at intervals around the circumferential direction of the lining assembly, the number of second apertures 215 is the same as the number of first apertures 213, when the deposition barrier ring 214 is in the first position, each second aperture 215 and each first aperture 213 correspond one-to-one and are offset from each other, when the deposition barrier ring 214 is in the second position, each second aperture 215 and each first aperture 213 correspond one-to-one and at least partially overlap, and the number of heat lamp assemblies is the same as the number of first apertures 213, and each heat lamp assembly faces each first aperture 213 in a one-to-one correspondence.

[0034] When the base 202 is elevated to a first process position, the deposition barrier ring 214 can be positioned at the first position, thereby offsetting the second apertures 215 and the first apertures 213 from each other, and when the base 202 is elevated to a second process position, the deposition barrier ring 214 can be positioned at the second position, thereby at least partially overlapping the second apertures 215 and the first apertures 213. In some embodiments, when the base 202 is in the first process position, the deposition barrier ring 214 is in the first position and supported by the lining assembly, and when the base 202 is elevated from the first process position to the second process position, the base 202 can drive the deposition barrier ring 214 to be elevated to the second position. That is, the deposition barrier ring 214 can be driven to rise from the first position to the second position by the upward movement of the base 202, and can be driven by the base 202 to return to the first position by the downward movement of the base 202, and can be supported by the lining assembly at this time, thereby realizing the switching of the deposition barrier ring 214 between the first position and the second position, and there is no need to separately provide a power source for the deposition barrier ring 214, which simplifies the structure of the equipment and reduces the cost of the equipment. However, the embodiment of the present invention is not limited thereto, and in actual applications, a separate power source can be provided for the deposition barrier ring 214 to separately control the switching of the deposition barrier ring 214 between the first position and the second position. In this case, when the base 202 rises to the first process position, the deposition barrier ring 214 can be controlled to move to the first position, and when the base 202 rises to the second process position, the deposition barrier ring 214 can be controlled to move to the second position.

[0035] Preferably, in this embodiment, when the base 202 is raised to the second process position and the deposition barrier ring 214 is in the second position, the second aperture 215 and the first aperture 213 completely overlap in height, and the first aperture 213 and the heat lamp assembly opposite it are both located above the top of the base 202, so that the light emitted by the heat lamp assembly can be irradiated onto the top surface of the wafer located on the base 202 through the first aperture 213 and the second aperture 215 to heat the wafer.

[0036] In this embodiment, the chamber body includes a lower chamber body 201 and an upper chamber body 203. The lower chamber body 201 includes a bottom wall and an annular sidewall. The base 202 includes an electrostatic chuck. A lifting mechanism is provided below the electrostatic chuck, penetrating the bottom wall of the lower chamber body 201. The lifting mechanism is used to raise and lower the electrostatic chuck so as to switch between a first process position and a second process position. The upper chamber body 203 is cylindrical, and the upper chamber body 203 and the lower chamber body 201 are arranged coaxially. A ceramic ring 204 is provided on the upper chamber body 203. The ceramic ring 204 is used to accommodate a target material 205, which can seal a cavity surrounded by the lower chamber body 201 and the upper chamber body 203. In actual applications, chamber bodies with other structures may be used, and the base 202 may be a mechanical chuck or other chuck; these are not particularly limited in this embodiment of the present invention.

[0037] In some embodiments, an annular step 217a is formed on the inner ring side of the lining assembly, and a first overlap member 218a and a second overlap member 218b are provided on the top and bottom of the deposition barrier ring 214, respectively. When the deposition barrier ring 214 is in the first position (the position shown in FIG. 1 ), the deposition barrier ring 214 overlaps the annular step 217a via the first overlap member 218a. When the base 202 rises from the first process position to the second process position, the base 202 pushes up the deposition barrier ring 214 via the second overlap member 218b, thereby driving the deposition barrier ring 214 to rise to the second position (the position shown in FIG. 5 ). When the base 202 descends from the second process position, the deposition barrier ring 214 overlaps the annular step 217a again via the first overlap member 218a during the descent. At this time, the deposition barrier ring 214 is supported by the lining assembly and does not continue to descend together with the base 202.

[0038] In some embodiments, the first overlap member 218a may be a second annular flange extending laterally outward from the top of the deposition barrier ring 214, and the deposition barrier ring 214 overlaps the annular step 217a via the second annular flange.

[0039] In this embodiment, the lining assembly includes an upper lining 210 and a lower lining 212, with the upper lining 210 being disposed on the upper inside of the chamber body and the lower lining 212 being disposed below the upper lining 210. In practical applications, the lining assembly may employ a single lining, in which case the lining may be disposed to completely shield the inside of the sidewall of the upper chamber body 203, or the upper lining 210 and the lower lining 212 may be connected to form an integral structure, or other lining structures may be employed, which are not particularly limited in this embodiment of the present invention.

[0040] In some embodiments, the lower lining 212 includes a first cylindrical sidewall 216 and a second cylindrical sidewall 217 that are coaxially arranged, the second cylindrical sidewall 217 being located below the first cylindrical sidewall 216, and the first cylindrical sidewall 216 being connected to the sidewall of the chamber body. A specific connection method may include, for example, a chamber body support member being provided on the upper part of the sidewall of the chamber body, the chamber body support member including, for example, a first annular step 203a formed on the upper part of the upper chamber body 203, a first annular flange 216a extending laterally from the upper part of the first cylindrical sidewall 216, and the first cylindrical sidewall 216 overlapping the chamber body support member (i.e., the first annular step 203a) via the first annular flange 216a. Optionally, the chamber body support member may further include an upper lining support ring 211 that is provided on the first annular step 203a, and the upper lining 210 is provided on the upper lining support ring 211. In practical applications, other connection methods may be used between the first cylindrical side wall 216 and the side wall of the chamber body, and the embodiments of the present invention do not particularly limit this.

[0041] In some embodiments, the inner diameter of the side wall of the second cylinder 217 is smaller than the inner diameter of the first cylindrical side wall 216, and the annular step 217a is formed between the bottom of the first cylindrical side wall 216 and the top of the second cylindrical side wall 217, and multiple first openings 213 are provided in the side wall of the second cylinder 217.

[0042] In some embodiments, the first cylindrical side wall 216 and the second cylindrical side wall 217 are integrally formed. In this case, the annular step 217a is formed by bending between the bottom of the first cylindrical side wall 216 and the top of the second cylindrical side wall 217.

[0043] In some embodiments, the deposition barrier ring 214 and the second overlap member 218b are integrally formed.

[0044] In some embodiments, the bottom of the inner edge of the upper lining 210 is provided with a downwardly extending annular side wall 210a, the outer diameter of which is smaller than the inner diameter of the first cylindrical side wall 216, and the lower end of the annular side wall 210a extends below the first annular flange 216a, and the annular side wall 210a can shield the gap between the upper lining 210 and the lining support ring 211, and the gap between the lining support ring 211 and the lower lining 212.

[0045] In some embodiments, a second annular step 210b is provided on the outer edge of the upper part of the upper lining 210, the upper surface of the second annular step 210b is flush with the upper part of the upper chamber body 203, and the ceramic ring 204 is provided on the upper part of the upper chamber body 203 and the second annular step 210b, i.e., the second annular step 210b supports the ceramic ring 204 together with the upper part of the upper chamber body 203.

[0046] In some embodiments, the bottom of the second cylindrical side wall 217 is provided with a third annular flange 217b extending away from the inner wall of the chamber body, the third annular flange 217b having an upwardly extending annular flange 217c at its end, and the second overlap member 218b includes a transversely disposed annular plate 218b1, the lower surface of which is provided with an annular groove 218b2 overlapping and mating with the annular flange 217c. When the deposition barrier ring 214 is supported by the lining assembly, the annular groove 218b2 and the annular flange 217c overlap and mating, thereby improving the stability of the support of the deposition barrier ring 214 and providing a restraining effect to the deposition barrier ring 214.

[0047] In this embodiment, the upper edge of the base 202 is further provided with a third annular step 202a that overlaps and fits with the inner edge of the annular plate 218b1.

[0048] As shown in Figures 1 and 3, in this embodiment, the heat lamp assembly includes an annular reflective member 223 and an annular heat lamp tube 220. The annular reflective member 223 is mounted on the inner wall of the chamber body along the circumferential direction of the chamber body, and the inner wall of the annular reflective member 223 is an arc-shaped reflective surface facing the center of the chamber body. The annular heat lamp tube 220 is mounted on the arc-shaped reflective surface via a plurality of support members 221.

[0049] Specifically, the annular reflective member 223 is an assembly surrounding the central axis of the chamber, made of aluminum or stainless steel, with a concave arc toward the center of the chamber, and its inner surface is mirror-polished to achieve high reflectivity, thereby reflecting the light from the annular heating lamp tube 220 and reflecting the light emitted by it to the central position of the process chamber.

[0050] The annular heating lamp tube 220 is a circular lamp tube that surrounds the central axis of the chamber. The power of the annular heating lamp tube 220 is preferably 5kW to 40kW. The annular heating lamp tube 220 has a first power supply end 401 and a second power supply end 402. The power supply line 222 passes through the side wall of the upper chamber body 203 and connects to the first power supply end 401 and the second power supply end 402 to supply power to the annular heating lamp tube 220.

[0051] As shown in Figure 2, in this embodiment, the first apertures 213 and the second apertures 215 are both elongated rectangular through holes, and the distance between two adjacent first apertures 213 and the distance between two adjacent second apertures 215 are both 10 mm or more and 30 mm or less.

[0052] Specifically, the lower lining 212 and the deposition barrier ring 214 use the same perforation method. For example, the sidewall of the lower lining 212 or the deposition barrier ring 214 may have four elongated rectangular perforations per circumference. The perforations have a height of at least 20 mm, preferably 40 mm. As many slits as possible must be drilled around the chamber to allow light from the heating lamp tube to pass through, with only narrow gaps between adjacent perforations remaining as connecting bridges between the upper and lower sections. To ensure sufficient strength of the components, the number of connecting portions located in the gaps between adjacent perforations must be at least three, and may be four, five, or six. The width of the connecting portion must be at least 10 mm, preferably 30 mm, to ensure sufficient strength. The first perforations 213 and the second perforations 215 may vertically overlap or be offset from each other. The gap between adjacent holes is narrow enough, and the lamp tube is enclosed, so that the lamp tube on both sides of the gap can also irradiate the wafer. When the wafer is heated, a heat conduction process occurs inside the wafer, raising the temperature of the entire wafer.

[0053] 6 , the first cylindrical side wall 216 and the second cylindrical side wall 217 may be separate members, and the bottom of the first cylindrical side wall 216 and the top of the second cylindrical side wall 217 may have two overlapping portions that fit together and extend laterally, forming an annular step 217a. Specifically, the overlapping portion at the bottom of the first cylindrical side wall 216 is a fourth annular flange 216b that extends laterally away from the inner wall of the chamber body, and the overlapping portion at the top of the second cylindrical side wall 217 is a fifth annular flange 217d that extends laterally toward the inner wall of the chamber body. In one embodiment, the second cylindrical side wall 217 may overlap the fourth annular flange 216b via the fifth annular flange 217d, and in this case, the second overlapping member 218b overlaps the fifth annular flange 217d, thereby providing support for the deposition barrier ring 214. In another embodiment, as shown in FIG. 6, the second cylindrical side wall 217 may be overlapped on the top of the annular reflector assembly 223 via the fifth annular flange 217d, and the fourth annular flange 216b of the first cylindrical side wall 216 may be stacked above the fifth annular flange 217d, with the second overlap member 218b overlapping the fourth annular flange 216b, thereby providing support to the deposition barrier ring 214.

[0054] As shown in FIG. 7, the deposition barrier ring 214 and the second overlap member 218b may be separate members, and the bottom of the deposition barrier ring 214 has a stepped overlap portion 214a that fits with the outer edge of the second overlap member 218b.

[0055] The process chamber of this embodiment further includes system components such as an RF system and back-blow gas piping, which are the same as those of a conventional copper reflow process chamber.

[0056] The operating principle of the process chamber of this embodiment is as follows.

[0057] As shown in Fig. 4, the base 202 is raised to a first process position (deposition process position), and the deposition barrier ring 214 is at the first position and supported by the base 202. At this time, the first opening 213 of the lower lining 212 and the second opening 215 of the deposition barrier ring 214 are offset in height from each other, ensuring that the thin film deposited on the target material 205 does not deposit on the chamber wall during the deposition process. When the reflow process is performed, as shown in Fig. 5, the base 202 continues to rise to a second process position (reflow process position), and drives the deposition barrier ring 214 to rise to the second position, and the first opening 213 of the lower lining 212 and the second opening 215 of the deposition barrier ring 214 are essentially aligned in height. Therefore, the light emitted by the annular heating lamp tube 220 can be irradiated onto the wafer of the base 202 through the first opening 213 and the second opening 215 by the action of the annular reflecting assembly 223, thereby irradiating and heating the wafer and realizing the reflow process.

[0058] Example 2 This embodiment provides a semiconductor processing device including the process chamber of the first embodiment.

[0059] By adopting the process chamber of Example 1, the semiconductor equipment can effectively avoid problems such as wafer misalignment, deformation, and damage caused by repeated wafer adsorption-desorption and heating in the reflow process flow.

[0060] Example 3 As shown in FIG. 8, the process method using the semiconductor process equipment of the second embodiment includes steps S1 to S6.

[0061] S1: The base 202 on which the wafer to be processed is placed is raised to the first process position, and the deposition barrier ring 214 is controlled to be lowered to the first position.

[0062] S2: A back-blow gas is introduced between the base 202 and the wafer to be processed, and a first deposition process is performed on the wafer to be processed.

[0063] S3: After the first deposition process is completed, the introduction of back blow gas between the base 202 and the wafer to be processed is stopped.

[0064] S4: The base 202 is raised to the second process position, the deposition barrier ring 214 is controlled to be raised to the second position, and the wafer is irradiated and heated by the heat lamp assembly to perform the reflow process.

[0065] S5: After completing the reflow process, the base 202 is lowered to the first process position, the deposition barrier ring 214 is controlled to be lowered to the first position, and back-blow gas is again introduced between the base 202 and the wafer, and a second deposition process is performed on the wafer.

[0066] S6: After completing the second deposition process, the introduction of back blow gas between the base 202 and the wafer is stopped.

[0067] Taking the copper reflow process as an example, as shown in FIG. 9, the method of this embodiment specifically includes the following steps S101 to S113.

[0068] S101: The wafer is transported to the chamber.

[0069] S102: First, the base 202 is controlled to be raised to the first process position (at this time, the deposition barrier ring 214 is lowered to the first position).

[0070] S103: The electrostatic chuck on the base 202 is controlled to electrostatically attract the wafer, and back-blow gas is introduced between the electrostatic chuck and the wafer.

[0071] S104: The first copper thin film deposition process is started. At this time, the wafer can be kept at a low temperature during deposition by the heat conduction of the back-blow gas between the wafer and the electrostatic chuck.

[0072] S105: After the first deposition process is completed, the back blow gas is turned off, and at this time, the electrostatic chuck is controlled to maintain the electrostatic adsorption voltage, so that the wafer continues to be firmly adsorbed to the surface of the electrostatic chuck. Because the back blow gas is turned off, there is almost no heat transfer between the wafer and the electrostatic chuck, and the electrostatic chuck has almost no cooling effect on the wafer.

[0073] S106: The base 202 is controlled to be raised to the second process position (at this time, the deposition barrier ring 214 is raised to the second position).

[0074] S107: The wafer is irradiated and heated by the heat lamp assembly to perform the copper reflow process.

[0075] When the base 202 raises the deposition barrier ring 214 to the second process position, the second apertures 215 of the deposition barrier ring 214 and the first apertures 213 of the lower lining 217 at least partially overlap in height, and the light from the annular heating lamps 200 can irradiate and heat the wafer through the first apertures 213 and the second apertures 215. Preferably, at this time, the light from the annular heating lamps can irradiate and heat the upper surface of the wafer to complete the copper reflow process.

[0076] S108: After the copper reflow process is completed, back-blow gas is again introduced between the base 202 and the wafer to cool the wafer.

[0077] S109: The base 202 is controlled to be lowered to the first process position (the order of step S108 and step S109 is interchangeable) (at this time, the deposition barrier ring 214 is lowered to the first position).

[0078] S110: A second copper thin film deposition process is carried out.

[0079] S111: After completing the second deposition process, the introduction of back blow gas between the base 202 and the wafer is stopped.

[0080] S112: The base 202 is controlled to stop electrostatically attracting the wafer and complete de-chuck.

[0081] S113: Finally, the wafer is removed from the chamber and the copper reflow process is completed.

[0082] The process method of this embodiment uses the copper reflow process equipment of embodiment 2, and the light from the annular heating lamp tube 220 can pass through the first opening 213 and the second opening 215 and irradiate the surface of the wafer (e.g., irradiate from above to below the base 202 and wafer). This eliminates the need to remove the wafer from the base 202 during the process, and eliminates the need for a desorption step. This avoids the risk of residual suction force due to desorption and the risk of wafer slippage caused by the ejector pins pushing up the wafer. Since the wafer does not need to be removed from the base during the reflow process, this effectively prevents the problem of position drift caused by wafer lifting and lowering, prevents residual suction force due to multiple adsorption and desorption cycles, and also eliminates the risk of wafer slippage and wafer damage.

[0083] Although the present invention has been described above with reference to various embodiments, the above description is illustrative and not exhaustive, and the present invention is not limited to the disclosed embodiments. It will be apparent to those skilled in the art that many modifications and variations can be made without departing from the scope and spirit of the described embodiments.

Claims

1. The chamber includes a chamber body, wherein an annular lining assembly is disposed in the chamber body in a circumferential direction of an inner wall of the chamber body, and a deposition barrier ring that can be raised and lowered is disposed on the inner ring side of the lining assembly, and a base that can be raised and lowered is disposed in the chamber body for placing a wafer to be processed thereon; the lining assembly has a first aperture extending through a sidewall of the lining assembly, the deposition barrier ring has a second aperture extending through a sidewall of the deposition barrier ring, and the chamber body has a heat lamp assembly facing the first aperture; 1. A process chamber for semiconductor processing equipment, wherein when the deposition barrier ring is in a first position, the second aperture and the first aperture are offset from each other, and when the deposition barrier ring is in a second position, the second aperture and the first aperture at least partially overlap, and the second position is higher than the first position.

2. the first apertures are a plurality of apertures, and are distributed at intervals around the circumferential direction of the lining assembly; the number of the second apertures is the same as the number of the first apertures; when the deposition barrier ring is in the first position, the second apertures and the first apertures correspond to each other in a one-to-one relationship and are offset from each other; and when the deposition barrier ring is in the second position, the second apertures and the first apertures correspond to each other in a one-to-one relationship and at least partially overlap each other; 2. The process chamber of claim 1, wherein the number of the heat lamp assemblies is the same as the number of the first apertures, and each of the heat lamp assemblies faces each of the first apertures in a one-to-one correspondence.

3. when the base is in a first process position, the deposition barrier ring is in the first position and is supported by the lining assembly; 3. The process chamber of claim 1, wherein when the base is raised from the first process position to the second process position, the base can drive the deposition barrier ring to raise it to the second position.

4. An annular step is formed on the inner ring side of the lining assembly, a first overlap member and a second overlap member are respectively provided on the top and bottom of the deposition barrier ring, and when the deposition barrier ring is in the first position, the deposition barrier ring overlaps the annular step via the first overlap member; 4. The process chamber of claim 3, wherein the base can push up the deposition barrier ring through the second overlap member when the base is raised from the first process position to the second process position.

5. the lining assembly includes a lower lining; the lower lining includes a first cylindrical side wall and a second cylindrical side wall that are coaxially arranged, the second cylindrical side wall being located below the first cylindrical side wall, and the first cylindrical side wall being connected to a side wall of the chamber body; 5. The process chamber of claim 4, wherein the inner diameter of the second cylindrical side wall is smaller than the inner diameter of the first cylindrical side wall, the annular step is formed between the bottom of the first cylindrical side wall and the top of the second cylindrical side wall, and the plurality of first openings are provided in the second cylindrical side wall.

6. 6. The process chamber of claim 5, wherein a chamber body support member is provided on an upper portion of the side wall of the chamber body, a first annular flange extending laterally is provided on an upper portion of the first cylindrical side wall, and the first cylindrical side wall overlaps the chamber body support member via the first annular flange.

7. 5. The process chamber of claim 4, wherein the first overlap member is a second annular flange extending laterally outward from a top portion of the deposition barrier ring.

8. a third annular flange is provided at the bottom of the second cylindrical side wall and extends away from the inner wall of the chamber body, the third annular flange having an upwardly extending annular flange at its distal end; The process chamber of claim 5, wherein the second overlap member includes a horizontally disposed annular plate, the lower surface of which is provided with an annular groove that overlaps and fits with the annular protrusion.

9. the heat lamp assembly includes an annular reflective member and an annular heat lamp tube, the annular reflective member is disposed around the inner wall of the chamber body in a circumferential direction of the chamber body, and the inner wall of the annular reflective member is an arcuate reflective surface facing the center of the chamber body; 2. The process chamber of claim 1, wherein the annular heating lamp tube is mounted on the arc-shaped reflecting surface via a plurality of support members.

10. the first cylindrical side wall and the second cylindrical side wall are integrally formed, and the annular step is formed by bending between the bottom of the first cylindrical side wall and the top of the second cylindrical side wall; Alternatively, the process chamber of claim 5, wherein the first cylindrical side wall and the second cylindrical side wall are separate members, and the bottom of the first cylindrical side wall and the top of the second cylindrical side wall are provided with two overlapping portions extending laterally and fitting together, respectively, and the two overlapping portions form the annular step.

11. the deposition barrier ring and the second overlap member are integrally formed, or Alternatively, the deposition barrier ring and the second overlap member are separate members, and the bottom of the deposition barrier ring has a stepped overlap portion that fits with the outer edge of the second overlap member.

12. 2. The process chamber of claim 1, wherein the first opening and the second opening are both elongated through holes, and the distance between two adjacent first openings and the distance between two adjacent second openings are both 10 mm or more and 30 mm or less.

13. A semiconductor process device comprising the process chamber according to any one of claims 1 to 12.

14. a step of controlling a base on which a wafer to be processed is placed to be raised to a first process position and a deposition barrier ring to be lowered to the first position; introducing a back-blow gas between the base and the wafer to be processed, and performing a first deposition process on the wafer to be processed; After completing the first deposition process, stopping the introduction of back-blow gas between the base and the wafer to be processed; raising the base to a second process position, controlling the deposition barrier ring to be raised to the second position, and irradiating and heating the wafer with the heat lamp assembly to perform a reflow process; After completing the reflow process, lowering the base to the first process position, controlling the deposition barrier ring to be lowered to the first position, again introducing back-blow gas between the base and the wafer, and performing a second deposition process on the wafer; 14. The process method using semiconductor process equipment according to claim 13, further comprising the step of stopping the introduction of backblow gas between the base and the wafer after completing the second deposition process.

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