Plasma processing apparatus and plasma processing method

Abstract

To plasma-process a substrate more precisely in a batch-type plasma processing apparatus.SOLUTION: A plasma processing apparatus includes a substrate holding unit capable of mounting a plurality of substrates in a plurality of stages in a height direction, and a processing container containing the substrate holding unit and having a heating unit that heats the substrate, and the substrate holding unit includes a plurality of stages formed of a dielectric material, and a first electrode layer and a second electrode layer embedded within the plurality of stages.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a plasma processing apparatus and a plasma processing method. [Background technology]

[0002] For example, Patent Document 1 discloses a batch-type apparatus that supplies gas into a reaction tube and activates the gas with a magnetic field component generated by an antenna to generate plasma, thereby processing multiple substrates at once. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-93226 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that enables more precise plasma processing of substrates in a batch-type plasma processing apparatus. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a plasma processing apparatus comprising: a substrate holding unit capable of placing multiple substrates in multiple stages in the vertical direction; and a processing vessel that houses the substrate holding unit and has a heating unit that heats the substrates, wherein the substrate holding unit has multiple stages formed of a dielectric, and first and second electrode layers embedded in the multiple stages. [Effects of the Invention]

[0006] According to one aspect, a substrate can be plasma-processed more precisely in a batch-type plasma processing apparatus. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a schematic diagram showing an example of the configuration of a plasma processing apparatus according to a first embodiment. [Figure 2] FIG. 2 is a schematic cross-sectional view showing an example of a substrate holding part according to an embodiment. [Figure 3] FIG. 3 is an enlarged view of a portion of the substrate holder shown in FIG. 2. [Figure 4] 3 is a schematic cross-sectional view showing an example of a stage of the substrate holding unit in FIG. 2. [Figure 5] Schematic cross-sectional view of the stage. [Figure 6] FIG. 10 is a cross-sectional view of a portion of a support member according to one embodiment. [Figure 7] FIG. 10 is a schematic diagram showing an example of the configuration of a plasma processing apparatus according to a second embodiment. [Figure 8] FIG. 8 is a cross-sectional view of the plasma processing apparatus of FIG. 7. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] In this specification, deviations in directions such as parallel, right angles, orthogonal, horizontal, vertical, up / down, left / right, etc. are permitted to the extent that they do not impair the effects of the embodiments. The shape of the corners is not limited to right angles and may be rounded like an arch. Parallel, right angles, orthogonal, horizontal, vertical, circular, and coincident may also include approximately parallel, approximately right angles, approximately orthogonal, approximately horizontal, approximately vertical, approximately circular, and approximately coincident.

[0010] In the processing chamber of a plasma processing apparatus, processes such as atomic layer deposition (ALD) and chemical vapor deposition (CVD) are performed to form a desired film on a substrate. However, as semiconductor devices formed on substrates become increasingly miniaturized, the number of processes requiring ALD processes is increasing. While ALD processes can form a uniform film, they have a lower film formation rate than CVD processes, resulting in reduced productivity. To compensate for this reduced productivity, methods have been proposed in which plasma is generated using RF power near a batch-type processing chamber or above a rotating semi-batch-type plasma processing apparatus that processes several substrates simultaneously.

[0011] For example, even in batch-type plasma processing equipment that processes several to several tens of substrates at once, more precise plasma control is important, and there is a demand for equipment with high productivity that has plasma processing performance using RF power equivalent to that of single-wafer processing equipment that processes substrates one by one.

[0012] Therefore, in this embodiment, a batch-type plasma processing apparatus 1 is proposed that supplies RF power to an electrode layer embedded in the stage 2 (see FIG. 1) and has the capability of performing precise plasma control.

[0013] First Embodiment [Plasma processing equipment] First, a configuration example of a plasma processing apparatus 1 according to a first embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic diagram showing a configuration example of a plasma processing apparatus 1 according to a first embodiment.

[0014] The plasma processing apparatus 1 includes a processing chamber 10, a gas supply unit 20, an exhaust unit (not shown), a control unit 90, and the like.

[0015] The processing vessel 10 has a substantially cylindrical shape. The processing vessel 10 has a substrate holding part 5 and a pedestal 4. The processing vessel 10 houses the substrate holding part 5 and has a heating part (not shown) such as a heater that heats a substrate, for example a semiconductor wafer. During plasma processing of the substrate, the interior of the processing vessel 10 can be heated to approximately 700°C to 800°C by the heating part. The processing vessel 10, the substrate holding part 5, and the pedestal 4 are made of a heat-resistant material such as quartz.

[0016] The substrate holding unit 5 has stages 2 arranged in multiple tiers in the height direction. In this embodiment, the stages 2 include stages 2a, 2b, 2c, and 2d, and plasma processing spaces 10s (see FIG. 3) are provided between stages 2a and 2b, between stages 2b and 2c, and between stages 2c and 2d. The substrate holding unit 5 is capable of placing multiple substrates on stages 2b, 2c, and 2d. The stages 2 are made of a dielectric material such as quartz. The substrate holding unit 5 has three support members 3a, 3b, and 3c attached to its outer periphery. The three support members 3a, 3b, and 3c are arranged at equal intervals around the periphery of the stage 2 and support the multiple stages 2. The support members 3a, 3b, and 3c are fixed to a pedestal 4. The pedestal 4 is rotatable during plasma processing of substrates.

[0017] Gas supply pipe 22 extends horizontally through processing vessel 10, and then bends in an L-shape and extends upward within processing vessel 10. Gas supply unit 20 passes processing gas output from gas source 21 through gas supply pipe 22, and supplies the processing gas into processing vessel 10 through multiple gas holes 22a arranged vertically. In this manner, substrate holder 5 on which multiple substrates W are placed is rotated, and processing gas is discharged from the outer periphery of substrates W in a side flow manner, thereby simultaneously forming films on multiple substrates W.

[0018] The processing gas includes, for example, a film-forming gas, a cleaning gas, a purge gas, etc. Although the example of Fig. 1 shows a case where there is one gas supply pipe 22, there may be a plurality of gas supply pipes 22.

[0019] The interior of the processing chamber 10 is evacuated by an exhaust device such as a dry pump or a turbo molecular pump. A control unit 90 controls the operation of the plasma processing apparatus 1. The control unit 90 may be, for example, a computer. A computer program that controls the overall operation of the plasma processing apparatus 1 may be stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0020] 1, RF power output from an RF (radio frequency) power supply 16 is distributed by a distributor 11. The distributed RF power is supplied to each of a plurality of first electrode layers embedded in a plurality of stages 2 via power supply lines housed inside support members 3a, 3b, and 3c (hereinafter also collectively referred to as support members 3).

[0021] The stages 2a, 2b, 2c, and 2d are circular and have the same diameter, and share the same central axis. The stages 2a, 2b, 2c, and 2d are stacked vertically at a predetermined interval. Because the environment inside the processing vessel 10 is approximately 800°C to 900°C, the stages 2a, 2b, 2c, and 2d are preferably made of quartz, which has the highest thermal durability.

[0022] [Substrate holding part] FIG. 2 is a cross-sectional view of the substrate holder 5 cut vertically along a plane passing through the central axis of the stage 2. Electrode layers are embedded in the stage 2. A second electrode layer 12aG and a first electrode layer 12aR are embedded above and below the uppermost stage 2a. The second electrode layer 12aG is an example of a second electrode layer connected to a ground line GL. The first electrode layer 12aR is an example of a first electrode layer connected to a power supply line RL that supplies RF power. Of the quartz support members 3a, 3b, and 3c that secure the stage 2, the second electrode layer 12aG is connected to a ground line GL housed in a cavity within the support member 3c, and the first electrode layer 12aR is connected to a power supply line RL housed in a cavity within the support member 3a.

[0023] A second electrode layer 12bG and a first electrode layer 12bR are embedded vertically within the second-to-top stage 2b. The second electrode layer 12bG is an example of a second electrode layer connected to a ground line GL. The first electrode layer 12bR is an example of a first electrode layer connected to a power supply line RL that supplies RF power. The second electrode layer 12bG is connected to the ground line GL housed in a cavity within the support member 3a, and the first electrode layer 12bR is connected to the power supply line RL housed in a cavity within the support member 3b.

[0024] A second electrode layer 12cG and a first electrode layer 12cR are embedded vertically within the third stage 2c from the top. The second electrode layer 12cG is an example of a second electrode layer connected to a ground line GL. The first electrode layer 12cR is an example of a first electrode layer connected to a power supply line RL that supplies RF power. The second electrode layer 12cG is connected to the ground line GL housed in a cavity within the support member 3b, and the first electrode layer 12cR is connected to the power supply line RL housed in a cavity within the support member 3c.

[0025] A second electrode layer 12dG is embedded in the lowermost stage 2d on the side of the substrate mounting surface. The second electrode layer 12dG is an example of a second electrode layer connected to a ground line GL. No first electrode layer is provided in the stage 2d. The second electrode layer 12dG is connected to a ground line GL housed in a cavity in the support member 3c.

[0026] Among the electrode layers embedded in the stages 2a to 2d of the substrate holder 5, the uppermost electrode layer (second electrode layer 12aG) (above the processing vessel 10) and the lowermost electrode layer (second electrode layer 12dG) (below the processing vessel 10) are second electrode layers connected to the ground. In this way, the electrode layers provided at the uppermost and lowermost stages 2 are connected to the ground, thereby functioning as a shield to prevent plasma from being generated between the stage 2 and the processing vessel 10. To achieve this shielding function, the second electrode layer 12aG is positioned higher than the first electrode layer 12aR in the uppermost stage 2a.

[0027] The ground line GL may be housed inside at least one of the plurality of support members 3a, 3b, 3c, and connected to at least one of the second electrode layers 12aG, 12bG, 12cG, 12dG in the plurality of stages 2. When the ground line GL is housed in only one of the support members 3, all of the second electrode layers 12aG, 12bG, 12cG, 12dG are connected to the ground line GL housed in the same support member 3.

[0028] A shallow circular recess is formed on the upper surface of the stage 2, and the bottom of the recess serves as a mounting surface 2u on which the substrate W is placed. The mounting surface 2u is circular and its diameter is larger than that of the substrate W. The lower surface of the stage 2 also has a circular recess of the same size at a position opposite the recess on the upper surface. The bottom of the recess on the lower surface (bottom surface 2l) is also circular. This forms a space between adjacent stages 2 that functions as a plasma generation space 10s (see Figure 3).

[0029] For example, the first electrode layer 12bR in stage 2b (an example of a first stage) among the multiple stages 2 is disposed opposite to the second electrode layer 12cG in stage 2c (an example of a second stage) adjacent to stage 2b across the plasma processing space 10s. The second electrode layer 12bG in stage 2b is disposed opposite to the first electrode layer 12aR in stage 2a (an example of a third stage) adjacent to stage 2b across the plasma processing space 10s.

[0030] RF power is supplied to the first electrode layers 12aR, 12bR, and 12cR (hereinafter also collectively referred to as the first electrode layer 12R). The RF power output from the RF power source 16 is distributed by the distributor 11 and supplied to the first electrode layers 12aR, 12bR, and 12cR in the multiple stages 2a, 2b, and 2c, respectively.

[0031] The second electrode layers 12aG, 12bG, 12cG, and 12dG (hereinafter also collectively referred to as second electrode layer 12G) are connected to the ground via impedance adjuster 13. However, the second electrode layers 12aG, 12bG, 12cG, and 12dG may also be connected to the ground directly without going through impedance adjuster 13.

[0032] With the above configuration, RF power is supplied to each first electrode layer 12R in the stage 2, generating an electric field within the stage 2. The second electrode layers 12G in the stage 2 facing each first electrode layer 12R are at ground potential, and a discharge phenomenon occurs in each plasma processing space 10s (see Figure 3), generating plasma within each plasma processing space 10s. Figure 3 is an enlarged view of a portion of the substrate holder 5 in Figure 2. Plasma, indicated by the dotted line, is generated in the plasma processing space 10s between the stage 2a and stage 2b. The plasma generated in the plasma processing space 10s below the stage 2b is omitted.

[0033] 3, RF power is supplied to the first electrode layer 12aR, which generates plasma in the plasma processing space 10s between the stage 2a and the stage 2b, and the substrate W placed on the placement surface 2u of the stage 2b is subjected to plasma processing.

[0034] Similarly, RF power is supplied to the first electrode layer 12bR, whereby plasma is generated in the plasma processing space (see FIG. 2) between the stage 2b and the stage 2c, and plasma processing is performed on the substrate W placed on the placement surface 2u of the stage 2c.

[0035] Similarly, RF power is supplied to the first electrode layer 12cR, whereby plasma is generated in the plasma processing space (see FIG. 2) between the stage 2c and the stage 2d, and plasma processing is performed on the substrate W placed on the placement surface 2u of the stage 2d.

[0036] With this configuration, a highly productive plasma processing apparatus 1 can be provided that has plasma processing performance with high in-plane uniformity using RF power equivalent to that of a single-wafer plasma processing apparatus that processes substrates one by one, and that can simultaneously form films on multiple substrates W at once.

[0037] The substrate holding unit 5 has a lift pin mechanism 41 for transferring the substrate W on each of the stages 2b to 2d. 3 shows only the lift pin mechanism 41 for transferring the substrate W on the stage 2b. The lift pin mechanism 41 has a function of raising and lowering the lift pins, and is configured to lift the substrate W from the back surface thereof using the respective lift pins that penetrate the stages 2b to 2d, and transfer the substrate W to a transport arm or place the substrate W on the placement surface 2u.

[0038] The thickness from the mounting surface 2u of each stage 2 to the bottom surface 2l of the recess on the lower surface of each stage 2 is approximately 10 mm. Of the stages 2, the uppermost stage 2a may not have a recess or mounting surface on its upper surface. In this case, the thickness from the upper surface of stage 2a to the bottom surface 2l of the lower surface is, for example, approximately 10 mm. The height of the plasma processing space 10s between adjacent stages 2, that is, the distance from the bottom surface 2l of one stage 2 to the mounting surface 2u of the adjacent lower stage 2, is, for example, approximately 6 mm to 30 mm.

[0039] A lift pin mechanism 41 is provided on each stage 2, and the substrate W is loaded and unloaded by the lift pins. For this reason, the support members 3a, 3b, and 3c are arranged at intervals that ensure the width necessary to horizontally remove the substrate W lifted by the lift pin mechanism 41. As shown in Fig. 2, the support members 3a, 3b, and 3c extend in the height direction on the outer periphery side of the mounting surface 2u, and pass through all of the stages 2 from the uppermost stage 2a to the lowermost stage 2d. The support members 3a, 3b, and 3c are made of a dielectric material such as quartz, and are hollow.

[0040] [Electrode layer] Next, the first electrode layer 12R and the second electrode layer 12G will be described in more detail with reference to Figures 4 and 5. Figure 4(a) is a schematic cross-sectional view showing an enlarged view of stage 2b as an example of stage 2. Figure 4(b) is an enlarged view of region E in Figure 4(a). Figure 5(a) is a cross-sectional view taken along line AA in Figure 2, and Figure 5(b) is a cross-sectional view taken along line BB in Figure 2. Figure 5(c) is a cross-sectional view taken along line CC in Figure 5(b).

[0041] As shown in Figures 4 and 5, the first electrode layer 12bR, etc. and the second electrode layer 12aG, 12bG, etc. are mesh electrodes, with electrode lines arranged in a grid pattern. The spacing between adjacent electrode lines is, for example, 2 mm to 8 mm. As in this embodiment, both the first electrode layer and the second electrode layer may be mesh electrodes, or one may be a mesh electrode and the other a film electrode. The first electrode layer 12R and the second electrode layer 12G both have circular outer edges and are the same size.

[0042] As shown in Figures 4(a) and 5(b), the diameter φ of the circular stage 2 is, for example, 400 mm. The size of the outer edges of the first electrode layer 12R and the second electrode layer 12G may be larger than or approximately the same as the mounting surface 2u. In the example shown in Figure 4(a), the diameter φ of the first electrode layer 12R and the second electrode layer 12G is 330 mm, and the diameter φ of the mounting surface 2u is approximately 302 mm, so that the size of the outer edges of the first electrode layer 12R and the second electrode layer 12G is larger than the mounting surface 2u.

[0043] The depth from the top surface of the stage 2b to the mounting surface 2u is approximately 0.6 mm. The distance from the mounting surface 2u to the second electrode layer 12bG in the thickness direction of the stage 2b is 1 mm to 2 mm. The distance from the second electrode layer 12bG to the first electrode layer 12bR in the thickness direction is 2 mm to 8 mm. The thickness from the first electrode layer 12bR to the bottom surface 2l of the stage 2b is 1 mm to 2 mm.

[0044] Referring to Fig. 4(b), which is an enlarged view of region E in Fig. 4(a), pillars 122 made of a dielectric material are arranged in the gaps 123 between the mesh-like (lattice-like) electrode wires of the second electrode layer 12bG. The pillars 122 are made of, for example, quartz. The pillars 122 are fixed between the quartz of the stage 2b.

[0045] The second electrode layer 12bG is made of metal, and the stage 2b is made of quartz. Therefore, if the temperature of the substrate holder 5 reaches 500°C to 700°C or higher during plasma processing of the substrate W, stress is applied to the stage 2, which sandwiches the first electrode layer 12R and the second electrode layer 12G, due to the difference in thermal expansion between the second electrode layer 12bG and the stage 2b. By providing the pillars 122 in the gaps 123, the stress on the stage 2 can be alleviated.

[0046] The height of the pillars 122 is 1 mm to 2 mm. As described above, the spacing between adjacent electrode wires of the second electrode layer 12bG is 2 mm to 8 mm. As with the second electrode layer 12G, when the first electrode layer 12R is a mesh-shaped electrode layer, the quartz pillars 122 are disposed in the gaps 123 between the mesh-shaped electrode wires.

[0047] As shown in Fig. 4(b), the second electrode layer 12bG is connected to an electrode lead wire BL and is connected to a ground line GL via a connector CN. The first electrode layer 12bR is connected to an electrode lead wire (not shown) and is connected to a power supply line RL via a connector. The support member 3 that houses the ground line GL and the power supply line RL is omitted in Fig. 4. Fine protrusions 2u1 are formed on the mounting surface 2u by embossing, and the substrate W is placed on the protrusions 2u1.

[0048] The RF power distributed by the distributor 11 and supplied to the first electrode layer 12R of each stage 2 is approximately 200 W to 300 W, but is not limited to this.

[0049] As shown in FIG. 5(b), power is supplied to the first electrode layer 12bR from one end of the mesh-shaped electrode wire. Power is supplied to the other first electrode layers 12R in a similar manner. In this embodiment, each of the support members 3a, 3b, and 3c houses one supply line RL and one ground line GL. Each supply line RL is connected to one of the first electrode layers 12aR, 12bR, and 12cR, and each ground line GL is connected to at least one of the second electrode layers 12aG, 12bG, 12cG, and 12dG. One ground line GL may be housed in any of the support members 3a, 3b, and 3c.

[0050] Any of the support members 3 may house a plurality of supply lines R and / or ground lines GL. Any of the support members 3 may not house any supply lines R and / or ground lines GL.

[0051] 6 is a cross-sectional view of a portion of a support member 3 according to one embodiment. The inside of the support member 3 is hollow, and in the example of FIG. 6(a), quartz is exposed on the inner wall of the support member 3. In the example of FIG. 6(b), the inner wall of the support member 3 is covered with a metal film or a metal tubular member 134. The metal film or metal tubular member 134 may be connected to ground and function as a ground line GL for grounding each second electrode layer 12G in the stage 2.

[0052] 6(a), one supply line RL and one ground line GL are housed inside the quartz support member 3. The supply line RL and the ground line GL pass through the quartz fixing member 133. The supply line RL and the ground line GL are wired without contacting each other due to the fixing member 133.

[0053] In the example of FIG. 6(b), the metal film or metal cylindrical member 134 is used as the ground line GL, and only the supply line RL is wired inside the support member 3. The central supply line RL and the outer metal film or metal cylindrical member 134 (ground line GL) form a coaxial structure that shields against high frequencies. The supply line RL passes through the quartz fixing member 133. As a result, the supply line RL is wired without coming into contact with the metal film or metal cylindrical member 134 at ground potential. Note that the supply line RL itself may be covered with a ceramic tube such as quartz to prevent electrical shorts.

[0054] The impedance adjuster 13 (see FIG. 2) is provided on the ground line GL. The RF power output from the RF power supply 16 is divided, and part of the RF power is supplied to the first electrode layer 12aR and flows from the second electrode layer 12bG to the ground via the plasma generated in the plasma processing space 10s. Part of the RF power is supplied to the first electrode layer 12bR and flows from the second electrode layer 12cG to the ground via the plasma generated in the plasma processing space 10s. Part of the RF power is supplied to the first electrode layer 12cR and flows from the second electrode layer 12dG to the ground via the plasma generated in the plasma processing space 10s.

[0055] The impedance adjuster 13 can change the amount of high-frequency current flowing from the second electrode layers 12bG, 12cG, and 12dG to ground, thereby controlling the spread (degree of diffusion) and plasma density of the plasma generated in the plasma processing space 10s, and enabling more precise control of the plasma processing of the substrate W.

[0056] Second Embodiment [Plasma processing equipment] Next, a configuration example of the plasma processing apparatus 1 according to the second embodiment will be described with reference to Fig. 7. Fig. 7 is a schematic diagram showing a configuration example of the plasma processing apparatus 1 according to the second embodiment.

[0057] The plasma processing apparatus 1 according to the second embodiment differs from the plasma processing apparatus 1 according to the first embodiment in that the second embodiment is provided with a plasma generation mechanism 30, whereas the first embodiment does not have such a mechanism. Therefore, the following description will focus on the plasma generation mechanism 30, and will omit a redundant description of the mechanism described in the first embodiment.

[0058] The plasma generation mechanism 30 is disposed on the outer sidewall of the processing vessel 10, has a counter electrode that supplies RF power, and functions as a remote plasma source that generates plasma within the plasma generation mechanism 30. The plasma generation mechanism 30 converts, for example, N2 gas into plasma to generate activated species such as N radicals.

[0059] An example of the internal configuration of the plasma generation mechanism 30 will be described with reference to Fig. 8. Fig. 8 is a horizontal cross-sectional view of the plasma processing apparatus of Fig. 7, and includes the cross-sectional configuration of the plasma generation mechanism 30. The plasma generation mechanism 30 has a plasma partition wall 32, a pair of plasma electrodes (counter electrodes) 33, a power supply line 34, an RF power supply 35, and an insulating protective cover 36.

[0060] The plasma compartment wall 32 is airtightly welded to the outer wall of the processing vessel 10. The plasma compartment wall 32 is made of, for example, quartz. The plasma compartment wall 32 has a concave cross section and covers an opening 31 formed in the side wall of the processing vessel 10. The opening 31 is elongated in the vertical direction so as to cover all of the substrates W supported by the substrate holder 5 in the vertical direction. A gas supply pipe 23 is disposed in an inner space defined by the plasma compartment wall 32 and communicating with the inside of the processing vessel 10, i.e., a plasma generation space. Meanwhile, the gas supply pipe 22 is disposed along the inner wall of the processing vessel 10 outside the plasma generation space, close to the substrates W.

[0061] The pair of plasma electrodes 33 each have an elongated shape extending in the height direction of the processing vessel 10, and are disposed facing each other in the vertical direction on the outer surfaces of both sides of the plasma compartment wall 32. A power supply line 34 is connected to the lower end of each plasma electrode 33.

[0062] The power supply lines 34 electrically connect each plasma electrode 33 to an RF power supply 35. The RF power supply 35 is connected to the lower end of each plasma electrode 33 via the power supply lines 34 and supplies RF power of, for example, 13.56 MHz to the pair of plasma electrodes 33. This applies RF power to the plasma generation space defined by the plasma partition walls 32.

[0063] Gas (e.g., N2 gas) discharged from gas hole 23a of gas supply pipe 23 is converted into plasma in the plasma generation space to which RF power is applied, and activated species of the gas thus generated are supplied into processing vessel 10 through opening 31. An insulating protective cover 36 is attached to the outside of plasma compartment wall 32 so as to cover the plasma compartment wall 32.

[0064] In the plasma processing apparatus 1 according to the second embodiment, a gas (e.g., N2 gas) is dissociated in the plasma generation mechanism 30, and activated species such as N2 gas are supplied from the plasma generation mechanism 30 into the processing chamber 10. In the substrate holding unit 5, plasma is generated in the plasma processing space 10s between the stages 2. For example, a gas (e.g., SiH4 gas) supplied from the gas holes 22a of the gas supply pipe 22 can be dissociated, and the activated species such as N2 gas supplied from the plasma generation mechanism 30 can be re-dissociated in the plasma processing space 10s. This allows for more precise plasma processing of the substrate W.

[0065] As described above, in the plasma processing apparatus 1 according to the first and second embodiments, the first electrode layer 12R that supplies RF power and the second electrode layer 12G that serves as a ground electrode are made of mesh-like metal, and these metal layers are sealed with a quartz plate stage 2. That is, two electrode layers are embedded in a single quartz plate stage 2, and, for example, RF power is supplied to one of the first electrode layers 12R, and the other, second electrode layer 12G, is set to ground potential. By stacking stages 2 with such a structure, it is possible to provide a batch-type plasma processing apparatus 1 in which quartz plate stages 2 are arranged in multiple tiers in the height direction.

[0066] In a plasma processing method performed in the plasma processing apparatus 1 having such a configuration, RF power is supplied to the first electrode layer 12R, and the second electrode layer 12G is connected to ground. Plasma is generated in the plasma processing space 10s between the stages 2 arranged in multiple tiers of the substrate holder 5, and multiple substrates W held by the substrate holder 5 are plasma-processed. This allows the batch-type plasma processing apparatus 1, which can process multiple substrates W simultaneously, to perform more precise plasma processing on the substrates W and improve productivity.

[0067] The plasma processing apparatus and plasma processing method according to the presently disclosed embodiments should be considered to be illustrative in all respects and not restrictive. The embodiments can be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above embodiments can be configured in other ways as long as they are not inconsistent, and can be combined as long as they are not inconsistent. [Explanation of symbols]

[0068] 1. Plasma processing equipment Stages 2, 2a-2d 3, 3a~3c strut members 5 Board holding part 10 Processing container 11 Distributor 12R 1st electrode layer 12G 2nd electrode layer 13 Impedance adjuster 16 RF power supply 30 Plasma generation mechanism 41 Lift pin mechanism

Claims

1. a substrate holder capable of mounting a plurality of substrates in a plurality of stages in the height direction; a processing vessel that houses the substrate holder and has a heating unit that heats the substrate, The plasma processing apparatus, wherein the substrate holding unit has a plurality of stages formed of a dielectric material, and a first electrode layer and a second electrode layer embedded in the plurality of stages.

2. a substrate holder capable of mounting a plurality of substrates in a plurality of stages in the height direction; a processing vessel that houses the substrate holder and has a heating unit that heats the substrate; a plasma generation mechanism that is disposed on an outer sidewall of the processing chamber, has a counter electrode to which RF power is supplied, and generates plasma; The plasma processing apparatus, wherein the substrate holding unit has a plurality of stages formed of a dielectric material, and a first electrode layer and a second electrode layer embedded in the plurality of stages.

3. The first electrode layer and / or the second electrode layer are mesh-shaped or film-shaped electrodes.

3. The plasma processing apparatus according to claim 1 or 2.

4. When the first electrode layer and / or the second electrode layer are in a mesh shape, dielectric pillar portions are arranged so as to penetrate the mesh-shaped voids. The plasma processing apparatus according to claim 3 .

5. RF power is supplied to the first electrode layer, and the second electrode layer is connected to ground. The plasma processing apparatus according to claim 1 .

6. the second electrode layer is connected to ground via an impedance adjuster; The plasma processing apparatus according to claim 5 .

7. the first electrode layer in a first stage among the plurality of stages faces the second electrode layer in a second stage adjacent to the first stage across a plasma processing space, and the second electrode layer in the first stage faces the first electrode layer in a third stage adjacent to the first stage across a plasma processing space; When RF power is supplied to the first electrode layer in the first stage and the third stage, the substrate holder is configured to generate plasma in the plasma processing space between the first stage and the second stage and between the first stage and the third stage, and to plasma process the plurality of substrates.

7. The plasma processing apparatus according to claim 5 or 6.

8. the substrate holding unit has a lift pin mechanism for transferring the substrate on each of the plurality of stages; The plasma processing apparatus according to claim 1 .

9. the substrate holder has a mounting surface on which the substrate is placed on each of the plurality of stages; The plasma processing apparatus according to claim 1 .

10. The outer edges of the first electrode layer and the second electrode layer are circular, and the outer edges of the first electrode layer and the second electrode layer are larger than or the same as the substrate. The plasma processing apparatus according to claim 9 .

11. The outer edge of the first electrode layer and the outer edge of the second electrode layer have the same size. The plasma processing apparatus according to claim 10.

12. the substrate holding portion has a plurality of hollow support members formed of the dielectric material and extending in a height direction on the outer circumferential side of the placement surface. The plasma processing apparatus according to any one of claims 9 to 11.

13. a ground line connected to the second electrode layer in the plurality of stages is housed inside at least one of the plurality of support members; The plasma processing apparatus according to claim 12 .

14. an RF power source that outputs RF power; a supply line connecting the RF power source and the first electrode layer in the plurality of stages is housed inside at least one of the plurality of support members; The plasma processing apparatus according to claim 12 or 13.

15. The inner walls of the plurality of support members are covered with a metal film or a metal cylindrical member, the metal film or the metal cylindrical member is connected to ground and functions as a ground line for grounding the second electrode layers in the plurality of stages; The plasma processing apparatus according to any one of claims 12 to 14.

16. an RF power source that outputs RF power; a distributor that distributes the RF power output from the RF power source, Distributing and supplying RF power to the first electrode layers in the stages; The plasma processing apparatus according to claim 1 .

17. Among the plurality of stages, the second electrode layer is disposed above the first electrode layer within a plurality of the stages. The plasma processing apparatus according to claim 1 .

18. Among the first electrode layers and the second electrode layers embedded in the plurality of stages, the uppermost and the lowermost electrode layers are the second electrode layers. The plasma processing apparatus according to any one of claims 1 to 17.

19. 19. A plasma processing method performed in the plasma processing apparatus according to claim 1, comprising: Applying RF power to the first electrode layer; connecting the second electrode layer to ground; A plasma processing method comprising generating plasma in a space between stages arranged in a plurality of stages of a substrate holder, and plasma processing a plurality of substrates held by the substrate holder.

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