Substrate processing apparatus and mounting table

Abstract

To prevent deterioration of the sealing performance of the sealing member.SOLUTION: A mounting table having a base, on which a substrate is placed, and the base has a first channel through which a heat medium of a first temperature flows, a first heat insulation layer disposed below the first channel, and a sealing member disposed below the first heat insulation layer.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a mounting table. [Background technology]

[0002] The substrate processing apparatus has a mounting table for mounting a substrate in a processing chamber. An O-ring is provided between the bottom surface of the mounting table and a member disposed below the mounting table, sealing the vacuum space in the processing chamber from the atmospheric space below the mounting table and maintaining the vacuum state in the processing chamber.

[0003] For example, Patent Document 1 discloses that an electrostatic chuck that electrostatically attracts a substrate is provided on a mounting table inside a processing vessel, and an O-ring is provided between the bottom surface of the electrostatic chuck and a base material placed below the electrostatic chuck. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2018-107433 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides: Increased insulation effect We provide technology that can do this. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, there is provided a processing vessel, and a processing chamber disposed in the processing vessel, formed integrally Foundation and, The base is Inside it, a first flow path through which a heat transfer medium having a first temperature flows; and a first heat insulating layer disposed below the first flow path. space and the first insulating space a second flow path arranged below the heating element and through which a heat transfer medium having a second temperature flows; The first heat insulating space is formed to surround the first flow path at the bottom and sides of the first flow path. A substrate processing apparatus is provided. [Effects of the Invention]

[0007] According to one aspect, Increased insulation effect It is possible. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus according to an embodiment. [Figure 2] FIG. 2 is an enlarged schematic cross-sectional view of a mounting table according to an embodiment. [Figure 3] FIG. 10 is an enlarged schematic cross-sectional view of a mounting table according to a modified example of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0010] [Substrate processing equipment] 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus 1 according to one embodiment. The substrate processing apparatus 1 is a reactive ion etching (RIE) type substrate processing apparatus. However, the substrate processing apparatus 1 can also be used as a plasma etching apparatus, a plasma CVD apparatus, etc.

[0011] The substrate processing apparatus 1 has a cylindrical processing vessel 10 made of metal, for example, aluminum or stainless steel, and the inside of the processing vessel 10 is a processing chamber where plasma processing such as plasma etching or plasma CVD is performed. The processing vessel 10 is grounded.

[0012] A disk-shaped mounting table 100 on which a wafer W is placed is provided inside the processing vessel 10. The mounting table 100 has an electrostatic chuck 25 and a base 26. The electrostatic chuck 25 is disposed on the base 26. The base 26 is made of, for example, aluminum or a titanium alloy, and is supported by a cylindrical support 13 extending vertically upward from the bottom of the processing vessel 10 via an insulating cylindrical holding member 12.

[0013] The central portion of the electrostatic chuck 25 is configured by sandwiching an attracting electrode 25c made of a conductive film between dielectric films 25a. A DC power supply 29 is electrically connected to the attracting electrode 25c via a switch 28. The electrostatic chuck 25 holds the wafer W on the electrostatic chuck 25 by an electrostatic attracting force generated by a voltage applied from the DC power supply 29 to the attracting electrode 25c.

[0014] The electrostatic chuck 25 comprises a disk-shaped central portion on which the wafer W is placed and an annular peripheral portion, with the central portion being higher than the peripheral portion. An edge ring 27 is placed on the upper surface of the peripheral portion, and surrounds the periphery of the substrate in an annular shape. The edge ring 27 is also called a focus ring.

[0015] An exhaust path 14 is formed between the sidewall of the processing vessel 10 and the cylindrical support 13. An annular baffle plate 15 is provided at the entrance or midway of the exhaust path 14. An exhaust port 16 is provided at the bottom of the exhaust path 14. An exhaust device 18 is connected to the exhaust port 16 via an exhaust pipe 17. The exhaust device 18 has a vacuum pump and reduces the pressure in the processing vessel 10 to a predetermined vacuum level. An automatic pressure control valve (not shown), which is a variable butterfly valve, is also provided in the exhaust pipe 17, and the pressure in the processing vessel 10 is controlled by the automatic pressure control valve. A gate valve 20 that opens and closes a transfer port 19 for the wafer W is attached to the sidewall of the processing vessel 10.

[0016] The substrate processing apparatus 1 has a first high frequency power supply 21 and a second high frequency power supply 22. The first high frequency power supply 21 is a power supply that generates a first high frequency power. The first high frequency power has a frequency suitable for generating plasma. The frequency of the first high frequency power is, for example, a frequency in the range of 27 MHz to 100 MHz. The first high frequency power supply 21 is connected to the mounting table 100 via a matching device 21a. The matching device 21a has a circuit for matching the output impedance of the first high frequency power supply 21 with the impedance on the load side (mounting table 100 side).

[0017] The second high frequency power supply 22 is a power supply that generates a second high frequency power. The second high frequency power has a frequency lower than that of the first high frequency power. When the second high frequency power is used together with the first high frequency power, the second high frequency power is used as a bias high frequency power for attracting ions into the wafer W. The frequency of the second high frequency power is, for example, within a range of 400 kHz to 13.56 MHz. The second high frequency power supply 22 is connected to the mounting table 100 via a matching device 22a. The matching device 22a has a circuit for matching the output impedance of the second high frequency power supply 22 with the impedance on the load side (mounting table 100 side).

[0018] Alternatively, plasma may be generated using the second high-frequency power without using the first high-frequency power, i.e., using only a single high-frequency power. In this case, the frequency of the second high-frequency power may be greater than 13.56 MHz, for example, 40 MHz. The substrate processing apparatus 1 may not have the first high-frequency power supply 21 and the matching box 21a. In this case, the second high-frequency power supply 22 constitutes an example of a plasma generation unit.

[0019] A shower head 40 is disposed on the ceiling of the processing chamber 10, facing the mounting table 100. Thus, high frequency power from the first high frequency power supply 21 is applied between the mounting table 100 and the shower head 40.

[0020] With this configuration, the mounting table 100 also functions as a lower electrode, and the shower head 40 also functions as an upper electrode at ground potential. The first high-frequency power supply 21 may be connected to the shower head 40 via a matching box 21a.

[0021] Base 26 is provided with a first flow path 101 and a second flow path 102 at an upper and lower stage. A heat medium at a first temperature flows and circulates through first flow path 101 from chiller unit 200 via pipes 202, 212, 213, and 203. A heat medium at a second temperature flows and circulates through second flow path 102 from chiller unit 200 via pipes 201, 211, 214, and 204. The second temperature of the heat medium flowing through second flow path 102 is higher than the first temperature of the heat medium flowing through first flow path 101.

[0022] The first flow path 101 is a spiral or concentric flow path extending in the circumferential direction of the wafer mounting surface. The first flow path 101 is provided over the entire wafer mounting surface of the electrostatic chuck 25, and the outermost flow path is formed outside the outermost periphery of the wafer W. This improves the controllability of the temperature of the wafer W and achieves uniformity of the temperature distribution on the wafer W.

[0023] A first insulating layer 111 is disposed below the first flow path 101. A second flow path 102 is disposed below the first insulating layer 111. A second insulating layer 112 is disposed below the second flow path 102. The second flow path 102 is a spiral or concentric flow path extending in the circumferential direction relative to the wafer mounting surface. The second flow path 102 may have the same shape as the first flow path 101 or a different shape. The second flow path 102 is provided over the entire wafer mounting surface of the electrostatic chuck 25, and its outermost flow path is formed outside the outermost circumference of the wafer W. This improves the temperature controllability of the base 26 below the first insulating layer 111 of the base 26.

[0024] The heat transfer gas supply unit 30 supplies a heat transfer gas between the back surface of the wafer W and the electrostatic chuck 25 via a gas supply line 31. As the heat transfer gas, a gas having thermal conductivity, such as He gas, is preferably used.

[0025] The O-ring 301 is disposed between the bottom surface of the base 26 and the upper surface of the cylindrical holding member 12. The O-ring 302 is disposed between the bottom surface of the base 26 and the joint portion 32 of the gas supply line 31.

[0026] The shower head 40 on the ceiling has an electrode plate 45 on the lower surface and an electrode support 41 that detachably supports the electrode plate 45. The electrode plate 45 has a large number of gas vent holes 46. A buffer chamber 44 is provided inside the electrode support 41, and a gas inlet 42 connected to the buffer chamber 44 is connected to a gas supply pipe 43, and the gas supply pipe 43 is connected to a process gas supply unit 47.

[0027] Each component of the substrate processing apparatus 1 is connected to a control unit 50. The control unit 50 controls each component of the substrate processing apparatus 1. Examples of the components include an exhaust device 18, a first high-frequency power supply 21, a second high-frequency power supply 22, a switch 28, a DC power supply 29, a heat transfer gas supply unit 30, a processing gas supply unit 47, and a chiller unit 200.

[0028] The control unit 50 includes a CPU 51 and a memory 52 (storage device), and reads and executes programs and processing recipes stored in the memory 52 to control desired substrate processing in the substrate processing apparatus 1. The control unit 50 also controls the temperature of the heat medium supplied from the chiller unit 200, the exhaust device 18, and the like.

[0029] Magnets 48 extending in a ring shape or concentric circles are arranged around the processing vessel 10, and a horizontal magnetic field directed in one direction is generated by the magnets 48 within the processing vessel 10 of the substrate processing apparatus 1. Furthermore, a vertical RF electric field is generated by high frequency power applied between the mounting table 100 and the shower head 40. This causes a magnetron discharge via the processing gas within the processing vessel 10, and high density plasma is generated from the processing gas near the surface of the mounting table 100.

[0030] In the substrate processing apparatus 1, during substrate processing, the gate valve 20 is first opened, and the wafer W to be processed is loaded into the processing chamber 10 and placed on the electrostatic chuck 25. Heat transfer media at first and second temperatures are supplied from the chiller unit 200 to the first and second flow paths 101 and 102, respectively. Then, the processing gas supply unit 47 introduces processing gas into the processing chamber 10 at a predetermined flow rate and flow ratio, and the pressure inside the processing chamber 10 is adjusted to a predetermined value by the exhaust system 18 or the like. Then, high-frequency power is supplied to the mounting table 100 from the first and second high-frequency power sources 21 and 22, and a voltage is applied to the attraction electrode 25c from the DC power source 29, thereby attracting the wafer W onto the electrostatic chuck 25. A heat transfer gas is also supplied to the backside of the wafer W. The processing gas discharged from the shower head 40 is converted into plasma, and the front side of the wafer W is subjected to a predetermined plasma processing by radicals and ions in the plasma.

[0031] [Placement table] Next, details of the configuration of the mounting table 100 according to one embodiment will be described with reference to FIG. 2. FIG. 2 is a schematic cross-sectional view mainly showing an enlarged view of the base 26 of the mounting table 100 in FIG. 1. This figure mainly shows the O-rings 301 and 302 arranged inside and on the bottom surface of the base 26, among the components of the mounting table 100, and omits the electrostatic chuck 25, the edge ring 27, and the wafer W. Note that the mounting table 100 does not necessarily have to have the electrostatic chuck 25. If the mounting table 100 does not have the electrostatic chuck 25, the upper part of the base 26 serves as a mounting surface for the wafer W.

[0032] The base 26 has a first flow path 101 through which a heat medium at a first temperature flows, and a first insulating layer 111 disposed below the first flow path 101. The base 26 further has a second flow path 102 disposed below the first insulating layer 111 and through which a heat medium at a second temperature flows, and a second insulating layer 112 disposed below the second flow path 102. O-rings 301 and 302 are disposed below the second insulating layer 112 on the bottom surface of the base 26 and between the second insulating layer 112 and components that come into contact with the bottom surface of the base 26 (the cylindrical holding member 12 and the joint portion 32 of the gas supply line 31).

[0033] The first flow path 101 circulates a heat medium at a first temperature to cool the wafer. The heat medium flowing through the first flow path 101 can be a liquid such as Fluorinert, liquid nitrogen, or a predetermined gas. The first temperature is controlled to a temperature of −100° C. or lower (hereinafter also referred to as “cryogenic temperature”). This locally cools the wafer-mounting surface of the mounting table 100 to a temperature in the cryogenic temperature range.

[0034] In order to improve the heat exchange rate, the first flow path 101 preferably has a fin structure that increases the surface area that comes into contact with the heat transfer medium. In the example of Fig. 2, the first flow path 101 is provided with a fin structure 101a having several pillars. The multiple pillars of the fin structure 101a are formed from the top of the first flow path 101 downward with the pillars having different heights. This improves the heat exchange rate, and allows the wafer W placed on the top of the first flow path 101 to be cooled to an extremely low temperature.

[0035] The structure provided in the first flow channel 101 may have a lattice structure or an uneven structure having recesses and / or protrusions instead of a fin structure, however, the first flow channel 101 does not need to have a fin structure or a lattice structure as long as the mechanical strength of the first flow channel 101 can be ensured.

[0036] The first insulating layer 111 has first hollow spaces 111a and 111b formed to surround the first flow path 101 at the bottom and sides of the first flow path 101. As shown in Fig. 1, the first hollow spaces 111a and 111b are connected to an exhaust device 18 by metal piping 130, and are evacuated and controlled to a vacuum state by the exhaust device 18. This allows the vacuum insulation effect to insulate the heat of the heat medium flowing through the first flow path 101, preventing it from being transmitted to the bottom of the first insulating layer 111.

[0037] However, the present invention is not limited to this, and the pressure in the first hollow spaces 111a and 111b may be controlled to be lower than atmospheric pressure. This also provides a heat insulating effect. When a predetermined heat insulating effect can be obtained, the first heat insulating layer 111 may have the first hollow space 111a below the first flow path 101, and the first hollow space 111b may not be provided on the side.

[0038] With this configuration, the first insulating layer 111 isolates and insulates the region in the base 26 where the first flow path 101 is provided from the region below the first insulating layer 111. This allows the wafer W to be cooled to an extremely low temperature, and the vacuum insulating effect of the first insulating layer 111 prevents the region below the first insulating layer 111 from being cooled to an extremely low temperature.

[0039] Although not shown in Figure 2, the first hollow spaces 111a, 111b of the first insulating layer 111 may have a fin structure or a lattice structure to increase mechanical strength. However, it is important to ensure that the first hollow spaces 111a, 111b are as large as possible to reduce heat conduction and increase the vacuum insulation effect. For this reason, the fin structure or lattice structure of the first insulating layer 111 may not be provided if mechanical strength can be ensured without the structure from the standpoints of both mechanical strength and ensuring internal space.

[0040] A second flow path 102 is provided on the opposite side of the first flow path 101 with the first heat insulating layer 111 sandwiched therebetween. The second flow path 102 circulates a heat medium at a second temperature, for example, 0°C or higher. This makes it possible to prevent the region on the opposite side of the first flow path 101 with the first heat insulating layer 111 sandwiched therebetween from being cooled to an extremely low temperature when cooled by the heat medium at, for example, -100°C flowing through the first flow path 101.

[0041] The heat medium flowing through the second flow path 102 may be a liquid such as Fluorinert, or a predetermined gas. The type of heat medium flowing through the second flow path 102 may be the same as or different from the heat medium flowing through the first flow path 101.

[0042] The second flow path 102 may have a fin structure that increases the surface area in contact with the heat medium to improve the heat exchange rate. For example, similar to the first flow path 101, the second flow path 102 may be provided with a fin structure having several pillars. This improves the heat exchange rate, and the second flow path 102, through which the heat medium at a second temperature close to room temperature flows, absorbs heat from the base 26, thereby increasing the temperature of the region of the base 26 where the second flow path 102 is located. This makes it possible to efficiently suppress a decrease in the temperature of the entire base 26 caused by circulating the extremely low-temperature heat medium through the first flow path 101.

[0043] The structure provided in the second flow channel 102 may have a lattice structure or an uneven structure having recesses and / or protrusions instead of a fin structure. However, as long as the mechanical strength of the second flow channel 102 can be ensured, the second flow channel 102 does not need to have a fin structure or a lattice structure.

[0044] The second insulating layer 112 has second hollow spaces 112a, 112b formed at the bottom and sides of the second flow path 102 so as to surround the second flow path 102. As shown in Fig. 1, the second hollow spaces 112a, 112b are connected to the exhaust device 18 by metal piping 131, and are evacuated and controlled to a vacuum state by the exhaust device 18. This allows the vacuum insulation effect to further insulate the heat of the heat medium flowing through the first flow path 101, preventing it from being transmitted to the bottom of the second insulating layer 112.

[0045] However, the present invention is not limited to this, and the pressure in the second hollow spaces 112a, 112b may be controlled to be lower than atmospheric pressure. This also provides a heat insulating effect. If a predetermined heat insulating effect can be obtained, the second heat insulating layer 112 may have the second hollow space 112a below the second flow path 102, and the second hollow space 112b may not be provided on the side.

[0046] With this configuration, a heat medium at a temperature close to room temperature is supplied to the second flow path 102 to absorb heat from the base 26, and the second insulating layer 112 further isolates and insulates the region in the base 26 where the first flow path 101 is provided from the region below the second insulating layer 112. As a result, even in an environment where the wafer W is cooled to an extremely low temperature, the temperature of the region below the second insulating layer 112 can be raised above the glass transition point, preventing deterioration of the sealing performance of the O-rings 301, 302.

[0047] Specifically, O-rings 301 and 302 are made of fluororubber, silicone rubber, or the like. Using O-rings 301 and 302 at extremely low temperatures reduces their sealing performance. Generally, materials lose fluidity when cooled, changing from liquid to solid at a certain temperature (freezing point). A stable solid state can be divided into a rubbery state with rubber elasticity and a glassy state at an even lower temperature, where the O-ring is completely frozen. Even if an O-ring is made of silicone rubber, which has a glass transition temperature of around -60°C, using the O-ring at temperatures below -60°C will result in the O-ring turning into a glassy state and its sealing performance degrading. As a result, the vacuum space U cannot be sealed from the atmospheric space A, resulting in a vacuum leak. Therefore, it is difficult to use an O-ring in a state where it can still function as a seal below its glass transition temperature.

[0048] In recent years, with the advancement of miniaturization and high integration of device structures, contact holes and the like have become increasingly higher in aspect ratio. When etching high aspect ratios, it has been considered to perform etching by lowering the temperature of the wafer W to extremely low temperatures, but in this case, deterioration of the sealing performance of the O-ring becomes an issue.

[0049] In contrast, in the mounting table 100 having such a configuration, the cooling efficiency of the wafer W can be improved by circulating a heat medium at a first temperature, which is an extremely low temperature such as −100° C. or lower, through the first flow path 101. On the other hand, even if the first temperature is lower than the glass transition temperature of the O-rings 301 and 302, the mounting table 100 can achieve vacuum insulation by using the first insulating layer 111 provided below the first flow path 101 and the second insulating layer 112 provided below the second flow path 102. In addition, the mounting table 100 can absorb heat from the base 26 by flowing a heat medium at a second temperature, such as room temperature, higher than the glass transition point through the second flow path 102 provided below the first insulating layer 111.

[0050] This prevents the temperature of the sealing surfaces of the O-rings 301 and 302 from decreasing, and allows the temperature of the sealing surfaces to be higher than the glass transition point. This allows the O-rings 301 and 302 to seal the vacuum space U in the processing chamber 10 from the atmospheric space A below the base 26 without deteriorating the sealing performance of the O-rings 301 and 302, even in a structure in which the wafer W is cooled at an extremely low temperature. As a result, the vacuum space U can be kept airtight.

[0051] Furthermore, the hollow spaces of the first insulating layer 111 and the second insulating layer 112 absorb the load due to atmospheric pressure from the bottom side of the base 26 caused by the pressure difference between the vacuum space U and the atmospheric space A, thereby suppressing bending deformation of the wafer mounting surface.

[0052] In addition to O-rings 301 and 302, an O-ring may be placed at the joint between the bottom surface of base 26 and the tube through which the pusher pin passes, or an O-ring may be placed between the bottom surface of base 26 and another member placed below it. In this case, too, the O-ring can maintain the airtightness of vacuum space U without reducing the sealing performance of the O-ring.

[0053] Although not shown in Figure 2, the second hollow spaces 112a, 112b of the second insulating layer 112 may have a fin structure or a lattice structure to increase mechanical strength. However, it is important to ensure that the second hollow spaces 112a, 112b are as large as possible to reduce heat conduction and increase the vacuum insulation effect. For this reason, the fin structure or lattice structure of the second insulating layer 112 may not be provided if mechanical strength can be ensured without the structure from the standpoints of both mechanical strength and ensuring internal space.

[0054] The second hollow spaces 112a and 112b may have the same shape as or a different shape from the first hollow spaces 111a and 111b. The second hollow spaces 112a and 112b may be connected to the first hollow spaces 111a and 111b to form the same space, or may be separate spaces from the first hollow spaces 111a and 111b.

[0055] However, in order to enhance the heat insulating effect, the pressure in each of the first hollow spaces 111a, 111b and the second hollow spaces 112a, 112b is controlled to be reduced, so it is preferable to use a structure that can be easily controlled to be a vacuum space.

[0056] [Variations] When the first flow path 101, the first insulating layer 111, the second flow path 102 and the second insulating layer 112 are formed in a shape and dimensions that ensure the mechanical strength of the base 26, it is not necessary to provide a fin structure or a lattice structure in any of the structures, as in the mounting table 100 of the modified example shown in Figure 3.

[0057] Furthermore, the number of heat insulating layers is not limited to two, and may be one, more than one, or none. Furthermore, the number of flow paths disposed below the first flow path 101 is not limited to one, and may be more than one, or none.

[0058] Furthermore, the flow path such as the second flow path 102 disposed below the first flow path 101 may be divided into a plurality of flow paths such as a low temperature line and a room temperature line, or may be a single flow path.

[0059] Even if a cryogenic heat medium is circulated through the first flow path 101, if the first insulating layer 111 can control the temperature of the sealing surfaces of the O-rings 301 and 302 to be higher than the glass transition point, it is not necessary to provide the second flow path 102 and the second insulating layer 112. In this case, the O-rings 301 and 302 are disposed below the first insulating layer 111 without the second flow path 102 and the second insulating layer 112 interposed therebetween.

[0060] [Manufacturing method] Next, a method for manufacturing the mounting table 100 according to one embodiment and a modification will be described. The base 26 has a hollow structure in which a first flow path 101, a first heat insulating layer 111, a second flow path 102, and a second heat insulating layer 112 are formed.

[0061] Furthermore, in the base 26 of the mounting table 100 according to one embodiment, a fin structure 101a is formed within the first flow channel 101. The base 26 having such a configuration is preferably manufactured using 3D printer technology or additive manufacturing technology. Specifically, an additive manufacturing technology using a metal material can be used. For example, a manufacturing technology that irradiates powdered metal with a laser or electron beam to sinter it, or a manufacturing technology that melts and deposits material with a laser or electron beam while supplying powdered metal or wire, can be used. Note that these manufacturing methods are merely examples and are not limiting. The mounting table 100 including the base 26 may also be manufactured using 3D printer technology or additive manufacturing technology.

[0062] The mounting table and substrate processing apparatus according to the embodiment and its modifications disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiment can be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above-described embodiments can be configured in other ways as long as they are not inconsistent, and can be combined as long as they are not inconsistent.

[0063] The mounting table of the present disclosure can be applied to any type of substrate processing apparatus, including Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna, Electron Cyclotron Resonance Plasma (ECR), Helicon Wave Plasma (HWP), and Atomic Layer Deposition (ALD) apparatus. Although a plasma processing apparatus has been used as an example of a substrate processing apparatus, the substrate processing apparatus is not limited to a plasma processing apparatus as long as it performs a predetermined process on a substrate (e.g., a film formation process, an etching process, etc.). For example, a CVD apparatus may also be used.

[0064] The above-disclosed embodiments include, for example, the following aspects. (Appendix 1) A mounting table having a base on which a substrate is placed, The base is a first flow path through which a heat transfer medium having a first temperature flows; a first heat insulating layer disposed below the first flow path; a sealing member disposed below the first heat insulating layer; A mounting table having (Appendix 2) the first insulating layer has a first hollow space; The first hollow space is controlled to a pressure lower than atmospheric pressure. 10. The mounting table of claim 1. (Appendix 3) The first hollow space has a fin structure or a lattice structure. Attachment 2. (Appendix 4) The first flow path has a fin structure or a lattice structure. The mounting table according to any one of Supplementary Notes 1 to 3. (Appendix 5) a second flow path through which a heat transfer medium having a second temperature flows, the second flow path being disposed below the first heat insulating layer; a second heat insulating layer disposed below the second flow path, The sealing member is disposed below the second insulating layer. The mounting table according to any one of Supplementary Notes 1 to 4. (Appendix 6) the second insulating layer has a second hollow space; The second hollow space is controlled to a pressure lower than atmospheric pressure. Attachment 5. The mounting table described in Appendix 5. (Appendix 7) The second hollow space has a fin structure or a lattice structure. Attachment 6. (Appendix 8) The second flow path has a fin structure or a lattice structure. The mounting table according to any one of Supplementary Notes 5 to 7. (Appendix 9) the second temperature is higher than the first temperature; The mounting table according to any one of Supplementary Notes 5 to 8. (Appendix 10) the second temperature is higher than the glass transition temperature of the sealing member; The mounting table according to any one of Supplementary Notes 5 to 9. (Appendix 11) the first temperature is lower than the glass transition temperature of the sealing member; The mounting table according to any one of Supplementary Notes 1 to 9. (Appendix 12) 12. The mounting table according to any one of appendices 1 to 11, wherein the base is formed by a 3D printer technique or an additive manufacturing technique. (Appendix 13) A processing vessel; a substrate processing apparatus disposed in the processing chamber, the substrate processing apparatus having a base and a mounting table on which a substrate is placed, The base is a first flow path through which a heat transfer medium having a first temperature flows; a first heat insulating layer disposed below the first flow path; a sealing member disposed below the first heat insulating layer; The substrate processing apparatus has: [Explanation of symbols]

[0065] 1: Substrate processing equipment 10: Processing container 15: Baffle plate 18: Exhaust system 21: First high frequency power source 22: Second high frequency power source 25: Electrostatic chuck 26: Foundation 27: Edge Ring 31: Gas supply line 32: Joint part 40: Shower head 47: Processing gas supply unit 50: Control unit 100:Placement table 101: First flow path 101a: Fin structure 111: First insulation layer 102: Second flow path 112: Second insulation layer 200: Chiller unit 301, 302: O-ring U: Vacuum space A: Atmospheric space

Claims

1. A processing vessel; a base disposed within the processing vessel and integrally formed therewith; The base has therein: a first flow path through which a heat medium having a first temperature flows; a first heat insulating space disposed below the first flow path; a second flow path disposed in a lower portion of the first heat insulating space and through which a heat medium having a second temperature flows; Equipped with The first heat insulating space is formed to surround the first flow path at a lower portion and a side portion of the first flow path. Substrate processing equipment.

2. The first insulating space is at a pressure lower than atmospheric pressure. The substrate processing apparatus according to claim 1 .

3. The first insulating space is in a vacuum state. The substrate processing apparatus according to claim 1 or 2.

4. The base is a second heat insulating space disposed below the second flow path; The substrate processing apparatus according to claim 1 .

5. The second insulating space is at a pressure lower than atmospheric pressure. The substrate processing apparatus according to claim 4 .

6. The second insulating space is in a vacuum state. The substrate processing apparatus according to claim 4 or 5.

7. The second heat insulating space is formed to surround the second flow path at a lower portion and a side portion of the second flow path. The substrate processing apparatus according to claim 4 .

8. the first thermal insulation space and the second thermal insulation space are defined in the base in the same shape; The substrate processing apparatus according to claim 4 .

9. the first thermal insulation space and the second thermal insulation space are defined in different shapes within the base; The substrate processing apparatus according to claim 4 .

10. At least one of the first flow path, the first heat insulating space, the second flow path, and the second heat insulating space has a fin structure or a lattice structure. The substrate processing apparatus according to claim 4 .

11. The first flow path and the second flow path have the same shape. The substrate processing apparatus according to claim 1 .

12. the first flow path and the second flow path have different shapes; The substrate processing apparatus according to claim 1 .

13. At least one of the first flow path and the second flow path is spiral-shaped or concentric-shaped. The substrate processing apparatus according to claim 1 .

14. the second temperature is higher than the first temperature; The substrate processing apparatus according to claim 1 .

15. A mounting table having a base on which a substrate is placed, The base is integrally formed, a first flow path through which a heat medium having a first temperature flows; a first heat insulating space disposed below the first flow path; a second flow path disposed in a lower portion of the first heat insulating space and through which a heat medium having a second temperature flows; in the base, The first heat insulating space is formed to surround the first flow path at a lower portion and a side portion of the first flow path. Mounting stand.

16. The first insulating space is at a pressure lower than atmospheric pressure. The stage according to claim 15.

17. The first insulating space is in a vacuum state. The mounting table according to claim 15 or 16.

18. The base is a second heat insulating space disposed below the second flow path; The stage according to any one of claims 15 to 17.

19. The second insulating space is at a pressure lower than atmospheric pressure. The stage according to claim 18.

20. The second insulating space is in a vacuum state.

20. The mounting table according to claim 18 or 19.

21. The second heat insulating space is formed to surround the second flow path at a lower portion and a side portion of the second flow path. The stage according to any one of claims 18 to 20.

22. the first thermal insulation space and the second thermal insulation space are defined in the base in the same shape; The stage according to any one of claims 18 to 21.

23. the first thermal insulation space and the second thermal insulation space are defined in different shapes within the base; The stage according to any one of claims 18 to 21.

24. At least one of the first flow path, the first heat insulating space, the second flow path, and the second heat insulating space has a fin structure or a lattice structure. The stage according to any one of claims 18 to 23.

25. The first flow path and the second flow path have the same shape. The stage according to any one of claims 15 to 24.

26. the first flow path and the second flow path have different shapes; The stage according to any one of claims 15 to 24.

27. At least one of the first flow path and the second flow path is spiral-shaped or concentric-shaped. The stage according to any one of claims 15 to 26.

28. the second temperature is higher than the first temperature; The stage according to any one of claims 15 to 27.

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